JP5077684B2 - Au-Sn alloy solder paste for pin transfer - Google Patents
Au-Sn alloy solder paste for pin transfer Download PDFInfo
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- JP5077684B2 JP5077684B2 JP2008077944A JP2008077944A JP5077684B2 JP 5077684 B2 JP5077684 B2 JP 5077684B2 JP 2008077944 A JP2008077944 A JP 2008077944A JP 2008077944 A JP2008077944 A JP 2008077944A JP 5077684 B2 JP5077684 B2 JP 5077684B2
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- 229910000679 solder Inorganic materials 0.000 title claims description 87
- 229910015363 Au—Sn Inorganic materials 0.000 title claims description 86
- 229910045601 alloy Inorganic materials 0.000 title claims description 86
- 239000000956 alloy Substances 0.000 title claims description 86
- 239000000843 powder Substances 0.000 claims description 39
- 230000004907 flux Effects 0.000 claims description 32
- 239000002245 particle Substances 0.000 claims description 29
- 239000012535 impurity Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 5
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000000758 substrate Substances 0.000 description 16
- 239000003822 epoxy resin Substances 0.000 description 10
- 229920000647 polyepoxide Polymers 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 7
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 7
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 7
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000009689 gas atomisation Methods 0.000 description 3
- 238000004220 aggregation Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Description
この発明は、Au−Sn合金はんだペーストをピン転写するに際してAu−Sn合金はんだペーストのピン転写量にバラツキが少ないピン転写用Au−Sn合金はんだペーストに関するものである。 The present invention relates to an Au—Sn alloy solder paste for pin transfer with little variation in pin transfer amount of the Au—Sn alloy solder paste when the Au—Sn alloy solder paste is transferred.
一般に、GaAs光素子、GaAs高周波素子、LED(発光ダイオード)素子などの半導体素子と基板との接合、微細かつ高気密性が要求されるSAWフィルター、水晶発振子などのパッケージ封止などにAu−Sn合金はんだペーストが使用されており、特に熱がこもると破損したり特性が著しく低下するLED(発光ダイオード)素子と基板との接合には電気伝導性および熱伝導性に優れているAu−Sn合金はんだペーストが多く使用されている。
このAu−Sn合金はんだペーストを用いて半導体素子を基板に接合するには印刷法、ディスペンス塗布法を使用してAu−Sn合金はんだペーストを基板に付着させ、基板に付着したAu−Sn合金はんだペーストの上に半導体素子を載せ、この状態でリフロー処理することにより接合していた。
In general, Au− is used for bonding a semiconductor element such as a GaAs optical element, a GaAs high frequency element, and an LED (light emitting diode) element to a substrate, a SAW filter that requires fine and high airtightness, and a package sealing such as a crystal oscillator. An Sn alloy solder paste is used. In particular, Au—Sn, which has excellent electrical and thermal conductivity, is used for bonding between an LED (light emitting diode) element and a substrate whose characteristics are remarkably deteriorated due to heat accumulation. Many alloy solder pastes are used.
In order to join the semiconductor element to the substrate using this Au—Sn alloy solder paste, the Au—Sn alloy solder paste is attached to the substrate using a printing method or a dispense coating method, and the Au—Sn alloy solder attached to the substrate. A semiconductor element was placed on the paste and bonded by reflow treatment in this state.
前記Au−Sn合金はんだペーストはAu−Sn合金はんだ粉末にフラックスを添加し撹拌混合して作製する。そして、通常使用されているAu−Sn合金はんだ粉末はSn:15〜25質量%を含有し、残部がAuおよび不可避不純物からなる成分組成を有することが知られており、このAu−Sn合金はんだ粉末はガスアトマイズにより製造されることおよびその平均粒径は5〜16μmの範囲内にあることが知られている(非特許文献1参照)。
また、前記フラックスにはロジンがベースとなっているロジン系フラックスが使用され、このロジン系フラックスには、R(溶媒と純粋なロジンだけのロジンフラックス)、RMA(温和な活性があるロジン系フラックス)、RA(活性化ロジンフラックス)の三つに分類されて表示されて市販されており、この分類はアメリカ連邦規格に由来するとされている(非特許文献2、3参照)。
そして、前記非特許文献1にはRMAフラックスまたはノンハロゲンフラックス:5〜10質量%、残部:Au−Sn合金はんだ粉末となるように配合したAu−Sn合金はんだペーストは粘度:50〜250Pa・sを有することが記載されている。
In addition, a rosin-based flux based on rosin is used as the flux, and this rosin-based flux includes R (rosin flux consisting only of solvent and pure rosin), RMA (rosin-based flux with mild activity). ) And RA (activated rosin flux), classified and displayed on the market, and this classification is said to be derived from US federal standards (see Non-Patent Documents 2 and 3).
In Non-Patent Document 1, the RMA flux or non-halogen flux: 5 to 10% by mass, and the balance: Au—Sn alloy solder paste blended so as to be Au—Sn alloy solder powder has a viscosity of 50 to 250 Pa · s. It is described that it has.
近年、GaAs光素子、GaAs高周波素子、LED素子などがますます小型化し、この小型化した半導体素子の接合にピン転写法が採用されており、このピン転写法には一般的にはAgエポキシ樹脂ペーストが使用されている。このピン転写法は、ピンを平面状態に保持されたAgエポキシ樹脂ペーストにピンを一定深さ差し込んでピンの先端にAgエポキシ樹脂ペーストを付着させ、ピン先端に付着したAgエポキシ樹脂ペーストを基板に接触させてAgエポキシ樹脂ペーストを基板に付着させ、このピン転写されたAgエポキシ樹脂ペーストの上に前記GaAs光素子、GaAs高周波素子、LED素子などの小型の半導体素子を載せてリフロー処理することにより接合する方法である。そのため、一定の大きさを有する半導体素子を基板に接合するには常に一定量のAgエポキシ樹脂ペーストを基板にピン転写する必要がある。その理由は基板に付着するAgエポキシ樹脂ペーストの量が少なすぎると半導体素子の基板に対する接合強度が不足し、一方、基板に付着するAgエポキシ樹脂ペーストの量が多すぎるコスト上昇の原因となるので好ましくないからである。
GaAs光素子、GaAs高周波素子、LED素子などがますます小型化するにつれて従来のAgエポキシ樹脂ペーストにより形成されたAg接合部では熱伝導性が十分でない。そこで、一層熱伝導性に優れた前記従来のAu−Sn合金はんだペーストをピン転写しようと試みた。しかし、従来のAu−Sn合金はんだペーストを基板に目標とする一定量のAu−Sn合金はんだペーストをピン転写することは難しく、従来のAu−Sn合金はんだペーストをピン転写しようとすると、ピン転写量に大きなバラツキが生じるのが現状であり、ピン転写量のバラツキが一層少ないAu−Sn合金はんだペーストが求められていた。
In recent years, GaAs optical elements, GaAs high-frequency elements, LED elements, and the like have become more and more compact, and a pin transfer method has been adopted for joining these miniaturized semiconductor elements. Generally, an Ag epoxy resin is used for this pin transfer method. Paste is used. In this pin transfer method, a pin is inserted at a certain depth into an Ag epoxy resin paste that holds the pin in a flat state, and the Ag epoxy resin paste is attached to the tip of the pin, and the Ag epoxy resin paste attached to the pin tip is attached to the substrate. A contact is made so that an Ag epoxy resin paste is attached to the substrate, and a small semiconductor element such as a GaAs optical element, a GaAs high frequency element, or an LED element is placed on the pin transferred Ag epoxy resin paste and subjected to a reflow process. It is a method of joining. Therefore, in order to join a semiconductor element having a certain size to the substrate, it is necessary to always transfer a certain amount of Ag epoxy resin paste to the substrate. The reason is that if the amount of the Ag epoxy resin paste adhering to the substrate is too small, the bonding strength of the semiconductor element to the substrate will be insufficient, while the amount of the Ag epoxy resin paste adhering to the substrate will be a cause of cost increase. It is because it is not preferable.
As GaAs optical elements, GaAs high frequency elements, LED elements, and the like are further miniaturized, thermal conductivity is not sufficient in an Ag junction formed by a conventional Ag epoxy resin paste. Therefore, an attempt was made to transfer the pin of the conventional Au—Sn alloy solder paste, which was further excellent in thermal conductivity. However, it is difficult to pin-transfer a certain amount of Au-Sn alloy solder paste, which is a target of conventional Au-Sn alloy solder paste, to the substrate. At present, there is a large variation in the amount, and an Au—Sn alloy solder paste with less variation in the amount of pin transfer has been demanded.
本発明者らは、ピン転写法にも適用できるピン転写量のバラツキが少ないAu−Sn合金はんだペーストを得るべく研究を行った。その結果、
(イ)RAフラックス:10越え〜25質量%を含有し、残部が一般に知られているSn:15〜25質量%を含有し、残りがAuおよび不可避不純物からなる成分組成を有するAu−Sn合金はんだ粉末となるように配合したAu−Sn合金はんだペーストにおいて、前記Au−Sn合金はんだ粉末の粒径が微細になるほどピン転写量のバラツキが少なくなり、前記Au−Sn合金はんだ粉末は平均粒径D50:5μm以下、最大粒径:10μm以下の微細なAu−Sn合金はんだ粉末であることが好ましい、
(ロ)前記(イ)記載のAu−Sn合金はんだペーストは10〜50Pa・s未満の粘度を有することが一層好ましい、
(ハ)前記平均粒径D50:5μm以下、最大粒径:10μm以下の微細なAu−Sn合金はんだ粉末をRMAフラックス、Rフラックス、ノンハロゲンフラックスに配合し混合して得られたフラックスは、加熱するとAu−Sn合金はんだ粉末は溶融するが、Au−Sn合金はんだ粉末の表面に形成されている酸化膜が除去されていないので凝集しないことから好ましくない、
などの研究結果が得られたのである。
The present inventors have studied to obtain an Au—Sn alloy solder paste that can be applied to the pin transfer method and has little variation in the amount of pin transfer. as a result,
(B) RA flux: Au-Sn alloy containing more than 10 to 25% by mass, the remainder being generally known Sn: 15 to 25% by mass, and the remainder being composed of Au and inevitable impurities In the Au—Sn alloy solder paste blended so as to become a solder powder, the variation in pin transfer amount decreases as the particle size of the Au—Sn alloy solder powder becomes finer, and the Au—Sn alloy solder powder has an average particle size. D 50 is preferably a fine Au—Sn alloy solder powder having a maximum particle size of 10 μm or less and 5 μm or less,
(B) It is more preferable that the Au—Sn alloy solder paste described in (a) has a viscosity of less than 10 to 50 Pa · s.
(C) The flux obtained by mixing and mixing the fine Au—Sn alloy solder powder having the average particle diameter D 50 of 5 μm or less and the maximum particle diameter of 10 μm or less into RMA flux, R flux, and non-halogen flux is heated. Then, although the Au-Sn alloy solder powder melts, the oxide film formed on the surface of the Au-Sn alloy solder powder is not removed, so it is not preferable because it does not aggregate.
The research results were obtained.
この発明は、かかる研究結果に基づいてなされたものであって、
(1)RAフラックス:10越え〜25質量%を含有し、残部がSn:15〜25質量%を含有し、残り:Auおよび不可避不純物からなる成分組成を有するAu−Sn合金はんだ粉末からなるピン転写用Au−Sn合金はんだペーストであって、前記ピン転写用Au−Sn合金はんだペーストに含まれるAu−Sn合金はんだ粉末は平均粒径:5μm未満でかつ最大粒径:10μm以下の粒度分布を有するAu−Sn合金はんだ粉末であるピン転写用Au−Sn合金はんだペースト、
(2)前記Au−Sn合金はんだペーストの粘度は10〜50Pa・s未満の範囲内にある前記(1)記載のピン転写用Au−Sn合金はんだペースト、に特徴を有するものである。
The present invention has been made based on the results of such research,
(1) RA flux: more than 10 to 25% by mass, the balance is Sn: 15 to 25% by mass, and the rest is a pin made of Au—Sn alloy solder powder having a component composition consisting of Au and inevitable impurities An Au—Sn alloy solder paste for transfer, wherein the Au—Sn alloy solder powder contained in the pin transfer Au—Sn alloy solder paste has an average particle size of less than 5 μm and a maximum particle size of 10 μm or less. Au-Sn alloy solder paste for pin transfer, which is an Au-Sn alloy solder powder having
(2) The Au—Sn alloy solder paste has a characteristic in the Au—Sn alloy solder paste for pin transfer described in (1), wherein the viscosity of the Au—Sn alloy solder paste is in the range of less than 10 to 50 Pa · s.
この発明のピン転写用Au−Sn合金はんだは下記の方法で作製する。まず、Sn:15〜25質量%を含有し、残りがAuおよび不可避不純物からなる成分組成を有するAu−Sn合金を溶解し、得られた溶湯を不活性ガスを噴射してガスアトマイズすることによりAu−Sn合金はんだ粉末を製造し、このようにして製造したAu−Sn合金はんだ粉末を分級して粒度調整し、平均粒径D50:5μm未満、最大粒径:10μm以下の微細なAu−Sn合金はんだ粉末を製造する。 The pin-transfer Au—Sn alloy solder of this invention is produced by the following method. First, by dissolving an Au—Sn alloy having a component composition containing Sn: 15 to 25% by mass and the remainder consisting of Au and inevitable impurities, the obtained molten metal is injected with an inert gas to be gas atomized. -Sn alloy solder powder was produced, and the Au-Sn alloy solder powder thus produced was classified to adjust the particle size, and fine Au-Sn having an average particle size D 50 of less than 5 µm and a maximum particle size of 10 µm or less Produces alloy solder powder.
このようにして得られたAu−Sn合金粉末をRAフラックスと混合してAu−Sn合金はんだペーストを作製する。このときAu−Sn合金はんだ粉末に配合するRAフラックスの量は10越え〜25質量%の範囲内にあるように配合し混合してAu−Sn合金はんだペーストの粘度を10〜50Pa・s未満の範囲内にあるようにすることが一層好ましい。 The Au—Sn alloy powder thus obtained is mixed with RA flux to prepare an Au—Sn alloy solder paste. At this time, the amount of RA flux blended in the Au—Sn alloy solder powder is blended so that the amount of RA flux is in the range of more than 10 to 25 mass%, and the viscosity of the Au—Sn alloy solder paste is less than 10-50 Pa · s. More preferably, it is within the range.
次に、この発明のピン転写用Au−Sn合金はんだペーストに含まれるAu−Sn合金はんだ粉末の成分組成は一般にAu−Sn合金はんだとして知られている範囲であるのでその成分組成の限定理由の説明は省略する。
この発明のピン転写用Au−Sn合金はんだペーストに含まれるAu−Sn合金はんだ粉末の粒度を平均粒径D50:5μm以下、最大粒径:10μm以下に限定したのは、Au−Sn合金はんだ粉末の平均粒径D50が5μmを越え、最大粒径が10μmを越えると、ピン転写されるAu−Sn合金はんだペースト量のバラツキが大きくなるので好ましくないからである。
また、平均粒径D50:5μm以下でかつ最大粒径:10μm以下の微細なAu−Sn合金はんだ粉末に市販のRAフラックスを10〜25質量%混合して得られたAu−Sn合金はんだペーストであっても粘度が10〜50Pa・s未満の範囲を外れることがある。ピン転写されるAu−Sn合金はんだペースト量のバラツキはAu−Sn合金はんだペーストの粘度が大きく影響を及ぼし、Au−Sn合金はんだペーストの粘度が10Pa・s未満ではRAフラックスが多く含まれ、ピンにAu−Sn合金はんだペーストを付着させるときにRAフラックスとAu−Sn合金はんだ粉末とが分離してRAフラックスが多く付着してしまい、転写されたAu−Sn合金はんだペーストに含まれるAu−Sn合金はんだ粉末の量が少なくなるので好ましくなく、一方、Au−Sn合金はんだペーストの粘度が50Pa・s以上になるとRAフラックスが少ないので乾燥しやすくなり、ピンへの付着性が悪くなって、転写量のバラツキが大きくなるので好ましくない。よって、この発明のピン転写用Au−Sn合金はんだペーストの粘度は10〜50Pa・s未満の範囲内にあることが一層好ましい。
この発明のピン転写用Au−Sn合金はんだペーストに含まれるフラックスをRMA、R、ノンハロゲンフラックスではなく、RAフラックスに限定しているのは、5μmアンダーのAu−Sn合金粉末はRMA、R、ノンハロゲンフラックスでは粉末表面の酸化膜を除去して溶融・凝集しないためである。
Next, the component composition of the Au-Sn alloy solder powder contained in the Au-Sn alloy solder paste for pin transfer of the present invention is in a range generally known as Au-Sn alloy solder, so the reason for the limitation of the component composition is as follows. Description is omitted.
The Au—Sn alloy solder powder contained in the Au—Sn alloy solder paste for pin transfer according to the present invention is limited to the average particle size D 50 : 5 μm or less and the maximum particle size: 10 μm or less. beyond the average particle diameter D 50 of 5μm powder, the maximum particle diameter exceeds 10 [mu] m, since Au-Sn alloy solder paste amount of variation that is pin transferred increases is not preferable.
Also, an Au—Sn alloy solder paste obtained by mixing 10 to 25 mass% of a commercially available RA flux with fine Au—Sn alloy solder powder having an average particle diameter D 50 of 5 μm or less and a maximum particle diameter of 10 μm or less. Even in this case, the viscosity may be out of the range of less than 10 to 50 Pa · s. The variation in the amount of Au-Sn alloy solder paste transferred to the pin is greatly affected by the viscosity of the Au-Sn alloy solder paste, and if the viscosity of the Au-Sn alloy solder paste is less than 10 Pa · s, a lot of RA flux is included. When the Au—Sn alloy solder paste is attached to the surface, the RA flux and the Au—Sn alloy solder powder are separated and a large amount of RA flux is attached, and the Au—Sn contained in the transferred Au—Sn alloy solder paste. Since the amount of the alloy solder powder is small, it is not preferable. On the other hand, when the viscosity of the Au-Sn alloy solder paste is 50 Pa · s or more, the RA flux is small, so that it becomes easy to dry and adhesion to the pin is deteriorated. This is not preferable because the amount of variation becomes large. Therefore, the viscosity of the Au—Sn alloy solder paste for pin transfer of the present invention is more preferably in the range of less than 10-50 Pa · s.
The flux contained in the Au-Sn alloy solder paste for pin transfer of the present invention is not limited to RMA, R, and non-halogen flux, but is limited to RA flux. Au-Sn alloy powder under 5 μm is RMA, R, non-halogen. This is because the flux removes the oxide film on the powder surface and does not melt or aggregate.
この発明のAu−Sn合金はんだペーストはピン転写に際してピン転写量のバラツキが少ないことから、従来のAu−Sn合金はんだペーストに比べて接合部の信頼性が優れており、半導体装置の不良品発生率も減少してコストを低減することができ、産業上優れた効果をもたらすものである。 Since the Au—Sn alloy solder paste of the present invention has less variation in the amount of pin transfer during pin transfer, the reliability of the joint is superior to that of the conventional Au—Sn alloy solder paste, and defective semiconductor devices are generated. The rate can also be reduced and the cost can be reduced, resulting in an excellent industrial effect.
実施例1
高周波溶解炉により溶解して得られたAu−Sn合金はんだ溶湯をガスアトマイズすることによりSn:20質量%を含有し残部がAuおよび不可避不純物からなる成分組成を有するAu−Sn合金はんだ粉末を作製し、このガスアトマイズして得られたAu−Sn合金はんだ粉末を分級装置を用いて分級し、分級して得られたAu−Sn合金はんだ粉末の粒度分布をマイクロトラック(日機装製MT3300)を用いて測定し、表1に示される平均粒径D50、最小粒径および最大粒径を有するAu−Sn合金はんだ粉末A〜Mを作製した。
Example 1
By gas atomizing the Au—Sn alloy solder melt obtained by melting in a high-frequency melting furnace, an Au—Sn alloy solder powder containing Sn: 20% by mass and the balance consisting of Au and inevitable impurities is produced. The Au—Sn alloy solder powder obtained by gas atomization was classified using a classifier, and the particle size distribution of the Au—Sn alloy solder powder obtained by classification was measured using a microtrack (MT3300 manufactured by Nikkiso). Then, Au—Sn alloy solder powders A to M having the average particle diameter D 50 , the minimum particle diameter, and the maximum particle diameter shown in Table 1 were produced.
さらに、市販のRAフラックスを用意し、このRAフラックスに表1の平均粒径および最大粒径が異なるAu−Sn合金はんだ粉末A〜Mを、RAフラックス:18質量%を含有し、残部が表1のAu−Sn合金はんだ粉末A〜Mとなるように配合し混合していずれも粘度:30Pa・sを有する本発明Au−Sn合金はんだペースト(以下、本発明ペーストという)1〜6および従来Au−Sn合金はんだペースト(以下、従来ペーストという)1〜14を作製した。 Further, a commercially available RA flux is prepared, and this RA flux contains Au-Sn alloy solder powders A to M having different average particle diameters and maximum particle diameters as shown in Table 1, RA flux: 18% by mass, and the balance is the surface. 1 to 6 of the present invention Au-Sn alloy solder paste (hereinafter referred to as the present invention paste) 1 to 6 having a viscosity of 30 Pa · s. Au-Sn alloy solder pastes (hereinafter referred to as conventional pastes) 1 to 14 were produced.
これら本発明ペースト1〜6および従来ペースト1〜14について、下記の方法でピン転写試験を行った。
まず、ピン径:150μmのタングステン製ピンを装着したWest bond社製のピン転写試験機(Model−7327)を用意した。さらに基板として縦:5mm、横:5mmの寸法を有するアルミナ板の表面に厚さ:3μmのNiメッキを施し、その上に厚さ:0.1μmのAuメッキを施した基板を用意した。
本発明ペースト1〜6および従来ペースト1〜14をそれぞれ20gづつスキージ機能付きワークホルダー(皿)に供給し、ワークホルダーを回転させることでスキージにより本発明ペースト1〜6および従来ペースト1〜14の高さをそれぞれ一定にレベリングし、次いでボンダーアームを動かすことでピンも連動して動かし、ピンにペーストを付着させた。この時、ピンのペーストへの侵入度は自動荷重検知システムで制御されて一定となるようにした。その後、ペーストが付着したピンを基板に転写した。この時のペーストの転写量を3次元測定器(Nikon製、NEXIV VMR−3020)により付着ペーストの径およびその高さ測定して転写ペーストの体積を算出し、これを100回繰り返し、平均付着量5nL(ナノリットル)および転写量のバラツキを求め、バラツキが±3nL以上を不合格とし、その結果を表2〜4に示した。
さらに、本発明ペースト1〜6および従来ペースト1〜14を窒素雰囲気中、温度:180℃に加熱されたホットプレートの上に120秒間置いてペーストのフラックスを加熱することにより予備加熱し、その後、この予備加熱されたペーストを窒素雰囲気中、温度:300℃に加熱された別のホットプレートの上に30秒間置いて、ペーストに含まれるAu−Sn合金はんだ粉末の溶融・凝集の有無を観察し、溶融・凝集しないものも不合格としてその結果を表2〜4に示した。
For these pastes 1 to 6 and conventional pastes 1 to 14, a pin transfer test was conducted by the following method.
First, a pin bond tester (Model-7327) manufactured by West bond, on which a tungsten pin having a pin diameter of 150 μm was mounted, was prepared. Further, a substrate was prepared by applying Ni plating with a thickness of 3 μm on the surface of an alumina plate having dimensions of 5 mm in length and 5 mm in width as a substrate, and Au plating with a thickness of 0.1 μm thereon.
The present pastes 1 to 6 and the conventional pastes 1 to 14 are respectively supplied to a work holder (dish) with a squeegee function by 20 g, and the present pastes 1 to 6 and the conventional pastes 1 to 14 are rotated by rotating the work holder. Each height was leveled, and then the pin was moved in conjunction with moving the bonder arm to attach the paste to the pin. At this time, the degree of penetration of the pin into the paste was controlled by an automatic load detection system so as to be constant. Thereafter, the pins with the paste attached were transferred to the substrate. At this time, the transfer amount of the paste was measured with a three-dimensional measuring device (manufactured by Nikon, NEXIV VMR-3020) to measure the diameter and height of the paste, and the volume of the transfer paste was calculated. The variation of 5 nL (nanoliter) and the transfer amount was determined, and the variation was ± 3 nL or more, and the results were shown in Tables 2 to 4.
Furthermore, the present pastes 1 to 6 and the conventional pastes 1 to 14 are preheated by heating the flux of the paste for 120 seconds on a hot plate heated to a temperature of 180 ° C. in a nitrogen atmosphere, This preheated paste is placed on another hot plate heated at a temperature of 300 ° C. for 30 seconds in a nitrogen atmosphere, and the presence or absence of melting / aggregation of the Au—Sn alloy solder powder contained in the paste is observed. Those that did not melt or agglomerate were rejected, and the results are shown in Tables 2-4.
表1〜4に示される結果から、平均粒径:5μm未満、最大粒径:10μm以下を有するAu−Sn合金はんだ粉末A〜Fを含む本発明Au−Sn合金はんだ1〜6は転写量のバラツキが±3nL未満であることから合格であるが、平均粒径が5μmを越え、さらに最大粒径:10μmを越えたAu−Sn合金はんだ粉末G〜Mを含む従来Au−Sn合金はんだ1〜7およびその他この発明の条件から外れた従来Au−Sn合金はんだ8〜14に比べてペーストの転写量のバラツキが±3nL以上となったり、溶融・凝集しなかったりして不合格となることがわかる。 From the results shown in Tables 1 to 4, the present invention Au—Sn alloy solders 1 to 6 including Au—Sn alloy solder powders A to F having an average particle size of less than 5 μm and a maximum particle size of 10 μm or less are transferred amounts. Although the variation is less than ± 3 nL, it is acceptable, but the conventional Au—Sn alloy solders 1 to 1 containing Au—Sn alloy solder powders G to M having an average particle size exceeding 5 μm and a maximum particle size exceeding 10 μm 7 and other variations of the transfer amount of paste in comparison with the conventional Au-Sn alloy solders 8 to 14 that deviate from the conditions of the present invention may be ± 3 nL or more, or may not be rejected due to melting or aggregation. Recognize.
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