JP5066691B2 - Method to stabilize electroless gold plating bath - Google Patents

Method to stabilize electroless gold plating bath Download PDF

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JP5066691B2
JP5066691B2 JP2006069204A JP2006069204A JP5066691B2 JP 5066691 B2 JP5066691 B2 JP 5066691B2 JP 2006069204 A JP2006069204 A JP 2006069204A JP 2006069204 A JP2006069204 A JP 2006069204A JP 5066691 B2 JP5066691 B2 JP 5066691B2
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gold plating
electroless gold
plating bath
hydrogen atom
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JP2007246954A (en
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喜美子 工藤
直美 山口
輝明 下地
俊也 村田
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Okuno Chemical Industries Co Ltd
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Description

本発明は、無電解金めっき浴及び無電解金めっき方法に関する。   The present invention relates to an electroless gold plating bath and an electroless gold plating method.

プリント配線板、半導体パッケージ、電子部品等の製造時における最終工程の一つに、導体回路、端子部分等に無電解ニッケルめっきを施し、更に無電解金めっきを行う処理がある。これは、プリント配線板の銅回路表面の酸化を防止して、良好なハンダ接続性能を発揮させることや、半導体パッケージとその上に実装される電子部品とをワイヤーボンディングさせる際に、半導体パッケージ、電子部品等の端子部分の金属と、金やアルミのワイヤーとを良好な状態で接合させることを目的とするものである。   One of the final steps in the production of printed wiring boards, semiconductor packages, electronic components, etc. is a process in which electroless nickel plating is applied to conductor circuits, terminal portions, etc., followed by electroless gold plating. This is to prevent oxidation of the copper circuit surface of the printed wiring board, to exhibit good solder connection performance, and to wire bond the semiconductor package and the electronic component mounted thereon, the semiconductor package, The object is to bond the metal of the terminal portion of the electronic component or the like and the wire of gold or aluminum in a good state.

このようなめっき皮膜の形成方法としては、プリント配線板の銅皮膜や、半導体パッケージや電子部品の金属ペースト上に、無電解ニッケルめっき皮膜を自己触媒的に析出させ、その後、該無電解ニッケル皮膜上に金めっき皮膜を置換析出させ、さらに自己触媒的に無電解金めっき皮膜を厚く成膜する方法が一般的な方法である。   As a method of forming such a plating film, an electroless nickel plating film is deposited on a copper film of a printed wiring board or a metal paste of a semiconductor package or an electronic component in an autocatalytic manner, and then the electroless nickel film A general method is a method in which a gold plating film is deposited on the top of the film, and a thick electroless gold plating film is formed in an autocatalytic manner.

しかしながら、上記した製造工程において、従来の自己触媒型無電解金めっきを用いる場合には、目的とする置換型金めっき皮膜上だけでなく、不要な箇所にも金めっき皮膜が析出する現象、いわゆるパターン外析出が生じやすくなる。この様な現象は製品の不良を引き起こし、信頼性を低下させる原因となっている。   However, when the conventional autocatalytic electroless gold plating is used in the manufacturing process described above, a phenomenon in which the gold plating film is deposited not only on the target substitutional gold plating film but also in an unnecessary portion, so-called Out-of-pattern precipitation is likely to occur. Such a phenomenon causes a defective product and causes a decrease in reliability.

特に、セラミックICパッケージに代表されるセラミック素材上に金属部分を形成した物品を被めっき物とする場合にはこの傾向が顕著であり、パターン外析出等のめっき拡がりが大きな問題となっている。   In particular, when an article in which a metal part is formed on a ceramic material typified by a ceramic IC package is used as an object to be plated, this tendency is remarkable, and plating spread such as out-of-pattern precipitation is a big problem.

この様なパターン外析出を防止するための添加剤としては、金属シアン化物、アセチルアセトン、エチルオキサント酸等が知られている(下記非特許文献1参照)。しかしながら、これらの添加剤の内で、金属シアン化物は毒性が高いという欠点があり、アセチルアセトン、エチルオキサント酸等は、添加効果が小さく、充分な効果を得るためには、多量に添加することが必要となる。
古藤田哲哉著、「NPシリーズ貴金属めっき」、1992年6月10日槇書店発行、P36
As additives for preventing such out-of-pattern precipitation, metal cyanide, acetylacetone, ethyl oxalic acid, and the like are known (see Non-Patent Document 1 below). However, among these additives, metal cyanide has a drawback that it is highly toxic, and acetylacetone, ethyl oxalic acid, etc. have a small effect of addition, and in order to obtain a sufficient effect, they should be added in a large amount. Is required.
FUJITA Tetsuya, "NP Series Precious Metal Plating", published on June 10, 1992 by Sakai Shoten, P36

本発明は、上記した従来技術の現状に鑑みてなされたものであり、その主な目的は、セラミック素材上に形成された金属部分などに選択性良く析出し、パターン外析出が発生し難く、めっき浴の分解、沈殿なども生じにくい、安定性に優れた新規な無電解金めっき浴を提供することである。   The present invention has been made in view of the current state of the prior art described above, and its main purpose is to deposit with high selectivity on a metal part or the like formed on a ceramic material and to prevent out-of-pattern precipitation from occurring. The object is to provide a novel electroless gold plating bath with excellent stability, which does not easily cause decomposition or precipitation of the plating bath.

本発明者は、上記した目的を達成すべく鋭意研究を重ねてきた。その結果、水溶性金化合物、錯化剤及び還元剤を含有する自己触媒型無電解金めっき浴に、更に、安定剤として、イソチオ尿素及びその誘導体からなる群から選ばれた少なくとも一種の成分を添加することにより、めっき液の安定性が向上して、パターン外析出が生じにくく、浴安定性にも優れた無電解金めっき浴が得られることを見出し、ここに本発明を完成するに至った。   The present inventor has intensively studied to achieve the above-described object. As a result, an autocatalytic electroless gold plating bath containing a water-soluble gold compound, a complexing agent and a reducing agent, and further, as a stabilizer, at least one component selected from the group consisting of isothiourea and derivatives thereof. As a result of the addition, it has been found that an electroless gold plating bath having improved stability of the plating solution, less likely to cause out-of-pattern precipitation, and excellent in bath stability can be obtained, and the present invention has been completed here. It was.

即ち、本発明は、下記の自己触媒型無電解金めっき浴を提供するものである。
1.
(i)水溶性金化合物、
(ii)錯化剤、
(iii)還元剤、並びに
(iv)イソチオ尿素及びその誘導体からなる群から選ばれた少なくとも一種の成分からなる安定剤、
を含有する水溶液からなる無電解金めっき浴。
2. 安定剤が、一般式:
That is, the present invention provides the following autocatalytic electroless gold plating bath.
1.
(I) a water-soluble gold compound,
(Ii) complexing agents,
(Iii) a reducing agent, and (iv) a stabilizer comprising at least one component selected from the group consisting of isothiourea and derivatives thereof,
An electroless gold plating bath comprising an aqueous solution containing
2. Stabilizers have the general formula:

Figure 0005066691
Figure 0005066691

(式中、R及びRは、同一又は異なって、水素原子、低級アルキル基、ベンジル基、フェニル基、ハロゲン原子、基:−N(R(但し、Rは水素原子又は低級アルキル基である)、ヒドロキシル基、基:−SO(但し、Mは水素原子又はアルカリ金属である)、シアノ基、ニトロ基又はホスホン基であり、Rは、ハロゲン原子、基:−N(R(但し、Rは水素原子又は低級アルキル基である)、ヒドロキシル基、基:−SO(但し、Mは水素原子又はアルカリ金属である)、シアノ基、ニトロ基、ホスホン基及びフェニル基からなる群から選ばれた少なくとも一種の置換基を有することのある低級アルキル基又は水素原子である。)で表される化合物及びその塩から選ばれた少なくとも一種の化合物である請求項1に記載の無電解金めっき浴。
3. 上記項1又は2に記載の無電解金めっき浴中に被処理物を浸漬することを特徴とする無電解金めっき方法。
(Wherein R 1 and R 2 are the same or different and are a hydrogen atom, a lower alkyl group, a benzyl group, a phenyl group, a halogen atom, a group: —N (R 4 ) 2 (where R 4 is a hydrogen atom or A lower alkyl group), a hydroxyl group, a group: —SO 3 M 1 (wherein M 1 is a hydrogen atom or an alkali metal), a cyano group, a nitro group or a phosphone group, R 3 is a halogen atom, Group: —N (R 5 ) 2 (where R 5 is a hydrogen atom or a lower alkyl group), hydroxyl group, group: —SO 3 M 2 (where M 2 is a hydrogen atom or an alkali metal), A lower alkyl group or a hydrogen atom which may have at least one substituent selected from the group consisting of a cyano group, a nitro group, a phosphone group and a phenyl group) and a salt thereof. Less Electroless gold plating bath of claim 1 is a kind of compound.
3. 3. An electroless gold plating method comprising immersing an object to be processed in the electroless gold plating bath according to item 1 or 2.

以下、本発明の無電解金めっき浴について説明する。
(i)水溶性金化合物:
本発明の自己触媒型無電解金めっき浴では、水溶性金化合物としては、公知の金めっき液において金供給源として用いられている各種化合物を用いることができる。具体例としては、亜硫酸金ナトリウム、シアン化金ナトリウム、シアン化金カリウム、塩化金酸ナトリウム、塩化金酸カリウム等を挙げることができるが、これらの金化合物に限定されるものではない。
Hereinafter, the electroless gold plating bath of the present invention will be described.
(I) Water-soluble gold compound:
In the autocatalytic electroless gold plating bath of the present invention, as the water-soluble gold compound, various compounds used as a gold supply source in a known gold plating solution can be used. Specific examples include sodium gold sulfite, sodium gold cyanide, potassium gold cyanide, sodium chloroaurate, and potassium chloroaurate, but are not limited to these gold compounds.

水溶性金化合物の濃度については特に限定的ではないが、金濃度が低すぎると、金めっきの析出速度が遅くなり、所定の金めっき皮膜を形成するために長時間を要することになる。一方、金濃度が高すぎると、めっき液からの金化合物の持ち出し量が多くなりコスト高になるので好ましくない。このような点から、金イオンとして0.001〜0.1mol/L程度とすることが好ましく、0.002〜0.05mol/L程度とすることがより好ましい。   The concentration of the water-soluble gold compound is not particularly limited. However, if the gold concentration is too low, the deposition rate of gold plating is slow, and a long time is required to form a predetermined gold plating film. On the other hand, if the gold concentration is too high, the amount of the gold compound taken out from the plating solution is increased and the cost is increased. From such a point, it is preferable to set it as about 0.001-0.1 mol / L as gold ion, and it is more preferable to set it as about 0.002-0.05 mol / L.

(ii)錯化剤:
錯化剤についても特に限定されるものではなく、公知の無電解金めっき液で用いられている錯化剤を使用できる。例えば、亜硫酸ナトリウム、亜硫酸カリウム、亜硫酸アンモニウム等の亜硫酸塩;シアン化ナトリウム、シアン化カリウム等のシアン化物;チオ硫酸ナトリウム、チオ硫酸カリウム、チオ硫酸アンモニウム等のチオ硫酸塩;リン酸、ホウ酸等の無機酸、その塩類(ナトリウム塩、カリウム塩、アンモニウム塩等);クエン酸、グルコン酸、酒石酸、乳酸、リンゴ酸等のヒドロキシカルボン酸、その塩類(ナトリウム塩、カリウム塩、アンモニウム塩等);エチレンジアミン、トリエタノールアミン等のアミン化合物;グリシン、アラニン、エチレンジアミン四酢酸、ニトリロトリ三酢酸等のアミノカルボン酸、その塩類(ナトリウム塩、カリウム塩、アンモニウム塩等);アミノトリメチレンホスホン酸、1−ヒドロキシエチリデン−1,1−ジホスホン酸、エチレンジアミンテトラメチレンホスホン酸、ジエチレントリアミンペンタ(メチレンホスホン酸)等のホスホン酸、その塩類(ナトリウム塩、カリウム塩、アンモニウム塩等)などを用いることができる。
(Ii) Complexing agent:
The complexing agent is not particularly limited, and a complexing agent used in a known electroless gold plating solution can be used. For example, sulfites such as sodium sulfite, potassium sulfite, and ammonium sulfite; cyanides such as sodium cyanide and potassium cyanide; thiosulfates such as sodium thiosulfate, potassium thiosulfate, and ammonium thiosulfate; inorganic acids such as phosphoric acid and boric acid Salts thereof (sodium salt, potassium salt, ammonium salt, etc.); hydroxycarboxylic acids such as citric acid, gluconic acid, tartaric acid, lactic acid, malic acid, salts thereof (sodium salt, potassium salt, ammonium salt, etc.); Amine compounds such as ethanolamine; aminocarboxylic acids such as glycine, alanine, ethylenediaminetetraacetic acid, nitrilotritriacetic acid, salts thereof (sodium salt, potassium salt, ammonium salt, etc.); aminotrimethylenephosphonic acid, 1-hydroxyethylidene-1 , 1 Diphosphonic acid, ethylenediamine tetramethylene phosphonic acid, phosphonic acids such as diethylene triamine penta (methylene phosphonic acid), its salts (sodium salt, potassium salt, ammonium salt, etc.) and the like can be used.

錯化剤の濃度は、特に制限されるものではないが、通常0.01mol/L程度以上とすればよく、錯化剤の濃度が低すぎると錯化剤としての効果が不十分となる場合があり、濃度が高すぎても効果はあまり上がらず不経済である。特に、錯化剤の濃度は0.05〜0.5mol/L程度とすることが好ましい。   The concentration of the complexing agent is not particularly limited, but is usually about 0.01 mol / L or more. When the concentration of the complexing agent is too low, the effect as the complexing agent is insufficient. If the concentration is too high, the effect does not increase so much and it is uneconomical. In particular, the concentration of the complexing agent is preferably about 0.05 to 0.5 mol / L.

(iii)還元剤:
還元剤についても特に限定的ではなく、公知の自己触媒型無電解金めっき液で用いられているものと同様の還元剤を使用できる。例えば、抱水ヒドラジン、硫酸ヒドラジン、中性硫酸ヒドラジン、マレイン酸ヒドラジン、これらの塩等のヒドラジン類;ヒドロキシルアミン類及びその塩等;アジピン酸ジヒドラジド、イソフタル酸ジヒドラジド、イソプロピルヒドラジン硫酸塩等のヒドラジン誘導体;アスコルビン酸、その塩(ナトリウム、カリウム、アンモニウム塩等);トリメチルアミンボラン(TMAB)、ジメチルアミンボラン(DMAB)等の水素化ホウ素化合物;チオ尿素;次亜リン酸、その塩(ナトリウム、カリウム、アンモニウム塩等)等を用いることができる。
(Iii) Reducing agent:
The reducing agent is not particularly limited, and the same reducing agent as that used in known autocatalytic electroless gold plating solutions can be used. For example, hydrazine hydrate, hydrazine sulfate, neutral hydrazine sulfate, hydrazine maleate, and salts thereof; hydroxylamines and salts thereof; hydrazine derivatives such as adipic acid dihydrazide, isophthalic acid dihydrazide, isopropyl hydrazine sulfate, etc. Ascorbic acid, salts thereof (sodium, potassium, ammonium salts, etc.); borohydride compounds such as trimethylamine borane (TMAB), dimethylamine borane (DMAB); thiourea; hypophosphorous acid, salts thereof (sodium, potassium, Ammonium salt etc.) can be used.

これら還元剤の作用により、めっき液中の金イオンが還元されて、被めっき物に金が析出する。還元剤の配合量は、特に制限されるものではないが、通常1〜100g/L程度とすればく、5〜70g/L程度とすることが好ましい。この場合、これら還元剤の濃度にほぼ比例してめっき速度が増大するが、100g/Lを超える量を添加してもめっき速度は余り大きくならず、むしろ浴安定性が劣化する場合があるので好ましくない。一方、還元剤の濃度が1g/L未満であるとめっき速度が非常に遅くなるのでやはり好ましくない。   By the action of these reducing agents, gold ions in the plating solution are reduced, and gold is deposited on the object to be plated. The blending amount of the reducing agent is not particularly limited, but is usually about 1 to 100 g / L, preferably about 5 to 70 g / L. In this case, the plating rate increases almost in proportion to the concentration of these reducing agents. However, even if an amount exceeding 100 g / L is added, the plating rate does not increase so much, but rather the bath stability may deteriorate. It is not preferable. On the other hand, if the concentration of the reducing agent is less than 1 g / L, the plating rate becomes very slow, which is not preferable.

(iv)安定剤
本発明の自己触媒型無電解金めっき液は、安定剤として、イソチオ尿素及びその誘導体からなる群から選ばれた少なくとも一種の成分を含有するものである。本発明の無電解金めっき液は、この様な特定の化合物を安定剤として含有することによって、めっき浴の安定性が良好になり、パターン外析出を防止して、目的とする部分にのみ金めっき皮膜を形成することが可能となる。更に、めっき浴の分解や沈殿が生じることなく、めっき液の長期使用が可能となる。
(Iv) Stabilizer The self-catalyzed electroless gold plating solution of the present invention contains at least one component selected from the group consisting of isothiourea and derivatives thereof as a stabilizer. By containing such a specific compound as a stabilizer, the electroless gold plating solution of the present invention improves the stability of the plating bath, prevents precipitation outside the pattern, and prevents gold from being deposited only on the target portion. A plating film can be formed. Furthermore, the plating solution can be used for a long time without causing decomposition or precipitation of the plating bath.

特に、安定剤としては、下記一般式:   In particular, stabilizers include the following general formula:

Figure 0005066691
Figure 0005066691

で表される化合物及びこの塩からなる群から選ばれた少なくとも一種の成分を用いることが好ましい。上記一般式において、R及びRは、同一又は異なって、水素原子、低級アルキル基、ベンジル基、フェニル基、ハロゲン原子、基:−N(R(但し、Rは水素原子又は低級アルキル基である)、ヒドロキシル基、基:−SO(但し、Mは水素原子又はアルカリ金属(Na,K等)である)、シアノ基、ニトロ基又はホスホン基であり、Rは、低級アルキル基又は水素原子であり、該低級アルキル基は、ハロゲン原子、基:−N(R(但し、Rは水素原子又は低級アルキル基である)、ヒドロキシル基、基:−SO(但し、Mは水素原子又はアルカリ金属(Na,K等)である)、シアノ基、ニトロ基、ホスホン基及びフェニル基からなる群から選ばれた少なくとも一種の置換基を有してもよい。 It is preferable to use at least one component selected from the group consisting of a compound represented by formula (I) and a salt thereof. In the above general formula, R 1 and R 2 are the same or different and are a hydrogen atom, a lower alkyl group, a benzyl group, a phenyl group, a halogen atom, or a group: —N (R 4 ) 2 (where R 4 is a hydrogen atom) Or a lower alkyl group), a hydroxyl group, a group: —SO 3 M 1 (where M 1 is a hydrogen atom or an alkali metal (Na, K, etc.)), a cyano group, a nitro group, or a phosphone group, R 3 is a lower alkyl group or a hydrogen atom, and the lower alkyl group is a halogen atom, a group: —N (R 5 ) 2 (where R 5 is a hydrogen atom or a lower alkyl group), a hydroxyl group, Group: —SO 3 M 2 (where M 2 is a hydrogen atom or an alkali metal (Na, K, etc.)), at least one substitution selected from the group consisting of a cyano group, a nitro group, a phosphone group, and a phenyl group Have group It may be.

上記一般式において、低級アルキル基としては、炭素数1〜5程度の直鎖状又は分枝鎖状のアルキル基が好ましく、その具体例としては、メチル、エチル、プロピル、イソプロピル、ブチル、イソブチル、tert−ブチル、ペンチル等を挙げることができる。またハロゲン原子としては、塩素、臭素、ヨウ素等を例示できる。   In the above general formula, the lower alkyl group is preferably a linear or branched alkyl group having about 1 to 5 carbon atoms, and specific examples thereof include methyl, ethyl, propyl, isopropyl, butyl, isobutyl, Examples thereof include tert-butyl and pentyl. Examples of the halogen atom include chlorine, bromine and iodine.

上記一般式で表される化合物の塩としては、アンモニウム塩、塩酸塩、臭化水素酸塩、硫酸塩、ヨウ素酸塩等を例示できる。   Examples of the salt of the compound represented by the general formula include ammonium salt, hydrochloride, hydrobromide, sulfate, iodate and the like.

イソチオ尿素及びその誘導体は、一種単独又は二種以上混合して用いることができる。
イソチオ尿素誘導体の具体例としては下記の化合物を例示できる。
・ S−メチルイソチオ尿素:
Isothiourea and its derivatives can be used singly or in combination of two or more.
Specific examples of the isothiourea derivative include the following compounds.
S-methylisothiourea:

Figure 0005066691
Figure 0005066691

・ S−エチルイソチオ尿素: S-ethylisothiourea:

Figure 0005066691
Figure 0005066691

・ S−イソプロピルイソチオ尿素: S-isopropylisothiourea:

Figure 0005066691
Figure 0005066691

・ S−2−アミノエチルイソチオ尿素: S-2-aminoethylisothiourea:

Figure 0005066691
Figure 0005066691

・ N−シアノ−N’,S−ジメチルイソチオ尿素: N-cyano-N ', S-dimethylisothiourea:

Figure 0005066691
Figure 0005066691

・ ベンジルイソチオ尿素: ・ Benzylisothiourea:

Figure 0005066691
Figure 0005066691

・ N−シアノ−S−メチル−N’フェニルイソチオ尿素: N-cyano-S-methyl-N'phenylisothiourea:

Figure 0005066691
Figure 0005066691

・ S−(2−ジメチルアミノエチル)イソチオ尿素: S- (2-dimethylaminoethyl) isothiourea:

Figure 0005066691
Figure 0005066691

イソチオ尿素及びその誘導体は、一種単独又は二種以上混合して用いることができる。
ことができる。
Isothiourea and its derivatives can be used singly or in combination of two or more.
be able to.

イソチオ尿素及びその誘導体からなる群から選ばれた少なくとも一種の成分の濃度は、特に限定的ではないが、通常、0.001〜100mg/L程度とすればよく、0.003〜50mg/L程度とすることが好ましい。これらの成分の濃度が低いとめっき液が不安定となり、めっき液の分解やパターン外析出が発生する場合があり、多すぎるとめっき外観不良が起こる場合があるので、いずれも好ましくない。   The concentration of at least one component selected from the group consisting of isothiourea and derivatives thereof is not particularly limited, but is usually about 0.001 to 100 mg / L, and about 0.003 to 50 mg / L. It is preferable that If the concentration of these components is low, the plating solution becomes unstable, decomposition of the plating solution or out-of-pattern precipitation may occur, and if too large, plating appearance defects may occur.

本発明の無電解金めっき浴は、上記した水溶性金化合物、錯化剤、還元剤及び安定剤を必須成分として含有する水溶液からなるものであり、めっき液の特性に悪影響を及ぼさない限り、上記成分の他に、他の金属塩、有機化合物などが含まれていても良い。   The electroless gold plating bath of the present invention consists of an aqueous solution containing the above-mentioned water-soluble gold compound, complexing agent, reducing agent and stabilizer as essential components, so long as it does not adversely affect the properties of the plating solution. In addition to the above components, other metal salts, organic compounds, and the like may be included.

無電解金めっき方法
本発明の無電解金めっき浴を用いるめっき方法は、通常の自己触媒型の無電解めっきの処理方法と同様で良い。通常は、被めっき物を無電解金めっき浴に浸漬する方法によってめっき処理を行うことができる。
Electroless gold plating method The plating method using the electroless gold plating bath of the present invention may be the same as the processing method of a normal autocatalytic electroless plating. Usually, the plating treatment can be performed by a method of immersing an object to be plated in an electroless gold plating bath.

処理対象物については特に限定されないが、代表的な処理対象物は、プリント配線基板、セラミックICパッケージ、電子部品などの導体回路、端子部分において、無電解ニッケルめっき皮膜を形成した上に、置換型の金めっき皮膜を形成した物品である。この場合には、置換型金めっき皮膜上に、直接、本発明の無電解金めっき液を用いてめっき処理を行うことが可能である。   The object to be treated is not particularly limited, but the typical object to be treated is a replacement type after forming an electroless nickel plating film on a printed circuit board, a ceramic IC package, a conductor circuit such as an electronic component, and a terminal part. This is an article on which a gold plating film is formed. In this case, it is possible to perform the plating treatment directly on the substitutional gold plating film using the electroless gold plating solution of the present invention.

また、自己触媒型無電解金めっき浴に対して触媒活性の無い被めっき物に対しては、公知の方法に従って被めっき物に無電解めっき用触媒を付与した後、本発明の無電解金めっき浴を用いてめっき処理を行えばよい。   In addition, for an object to be plated that has no catalytic activity with respect to the autocatalytic electroless gold plating bath, after applying an electroless plating catalyst to the object to be plated according to a known method, the electroless gold plating of the present invention Plating may be performed using a bath.

無電解金めっきを行う際の金めっき浴の液温については、低すぎると析出反応が緩慢となって金めっき皮膜の未析出や外観不良が発生し易くなるので、通常30℃以上とすればよい。一方、液温が高すぎるとめっき液の分解が生じ易くなり、水の蒸発が激しすぎるために、めっき液中に含まれる成分の濃度維持が困難となる。このため、めっき液の液温は、30〜90℃程度とすることが好ましく、50〜80℃程度とすることがより好ましい。   About the liquid temperature of the gold plating bath at the time of electroless gold plating, if it is too low, the precipitation reaction becomes slow and the gold plating film is not easily precipitated and the appearance is liable to occur. Good. On the other hand, if the solution temperature is too high, the plating solution is likely to be decomposed, and the evaporation of water is too intense, making it difficult to maintain the concentration of the components contained in the plating solution. For this reason, it is preferable that the liquid temperature of a plating solution shall be about 30-90 degreeC, and it is more preferable to set it as about 50-80 degreeC.

無電解金めっき液は、pHが低すぎるとめっき反応がほとんど進行せず、pHが高すぎると安定性が低下して自己分解が生じやすくなる。このため、pHを4〜13程度とすることが好ましく、5〜10程度とすることがより好ましい。   When the pH of the electroless gold plating solution is too low, the plating reaction hardly proceeds, and when the pH is too high, the stability is lowered and self-decomposition tends to occur. For this reason, it is preferable to make pH into about 4-13, and it is more preferable to set it as about 5-10.

本発明の無電解金めっき浴は、優れた安定性を有するものであり、例えば、各種の素材上に形成された金等の金属部分に自己触媒的に無電解金めっき処理を行う場合に、不要部分に対してほとんど金めっき皮膜が析出することなく、目的とする金属部分にのみ選択的に金めっき皮膜を形成することができ、めっき拡がりを防止できる。また、浴安定性が良好であることから、浴分解や沈殿物が生じることなく、長期間安定にめっき浴を使用できる。   The electroless gold plating bath of the present invention has excellent stability, for example, when performing electroless gold plating treatment autocatalytically on metal parts such as gold formed on various materials, The gold plating film can be selectively formed only on the target metal portion without almost depositing the gold plating film on the unnecessary portion, and the spreading of the plating can be prevented. Moreover, since the bath stability is good, the plating bath can be used stably for a long period of time without causing bath decomposition or precipitation.

以下、実施例を挙げて本発明を更に詳細に説明する。   Hereinafter, the present invention will be described in more detail with reference to examples.

実施例1
線幅50μm、スペース幅50μmの配線パターン有する3×5cmの耐熱性ガラス基材エポキシ樹脂積層板(耐熱性グレードFR−4)を被処理物として用い、配線パターン上に無電解Ni−Pめっき皮膜を4μm形成し、さらにその上に置換金めっき皮膜を0.1μm形成した。
Example 1
A 3 x 5 cm heat-resistant glass-based epoxy resin laminate (heat-resistant grade FR-4) having a wiring pattern with a line width of 50 µm and a space width of 50 µm is used as an object to be processed, and an electroless Ni-P plating film is formed on the wiring pattern. 4 μm was formed, and a displacement gold plating film was further formed 0.1 μm thereon.

次いで、下記表1に示す各組成の無電解金めっき浴中に被処理物を浸漬して、下記条件で無電解金めっき皮膜を形成した。   Subsequently, the to-be-processed object was immersed in the electroless gold plating bath of each composition shown in following Table 1, and the electroless gold plating film was formed on the following conditions.

めっき浴条件
pH 9
液温 70℃
液量 1L
液攪拌 空気攪拌
得られた各被処理物について、倍率80倍の光学顕微鏡を用いて表面状態を観察し、めっき拡がりの有無を評価した。配線パターン上にのみ金めっき皮膜が形成されている場合を○、樹脂上にも金めっき皮膜が拡がって形成されている場合を×として、下記表1にめっき拡がりの評価結果を示す。
Plating bath condition pH 9
Liquid temperature 70 ℃
1L of liquid
Liquid stirring Air stirring About each to-be-processed object, the surface state was observed using the optical microscope of 80-times multiplication factor, and the presence or absence of plating spreading was evaluated. Table 1 below shows the results of evaluation of plating spread, where ◯ indicates that the gold plating film is formed only on the wiring pattern, and x indicates that the gold plating film is formed on the resin.

また、上記めっき処理終了後に、各無電解金めっき浴を80℃で3時間放置し、金の沈殿の有無を確認し、めっき浴の安定性を評価した。沈殿が生じていない場合を○、沈殿が生じている場合を×として、めっき浴の安定性の評価結果を下記表1に示す。   Moreover, after completion | finish of the said plating process, each electroless gold plating bath was left to stand at 80 degreeC for 3 hours, the presence or absence of gold precipitation was confirmed, and the stability of the plating bath was evaluated. The results of evaluating the stability of the plating bath are shown in Table 1 below, where ◯ indicates that no precipitation has occurred, and x indicates that precipitation has occurred.

Figure 0005066691
Figure 0005066691

Claims (2)

イソチオ尿素及びその誘導体からなる群から選ばれた少なくとも一種の成分を有効成分とする、水溶性金化合物、錯化剤、及び還元剤を含有する水溶液からなる無電解金めっき浴用安定剤を、前記無電解金めっき浴に0.003〜50mg/Lの濃度で添加することを特徴とする無電解金めっき浴を安定させる方法。 A stabilizer for an electroless gold plating bath comprising an aqueous solution containing a water-soluble gold compound, a complexing agent, and a reducing agent , comprising as an active ingredient at least one component selected from the group consisting of isothiourea and derivatives thereof, A method for stabilizing an electroless gold plating bath, comprising adding the electroless gold plating bath to a concentration of 0.003 to 50 mg / L. 前記安定剤が、一般式:
Figure 0005066691
(式中、R及びRは、同一又は異なって、水素原子、低級アルキル基、ベンジル基、フェニル基、ハロゲン原子、基:−N(R(但し、Rは水素原子又は低級アルキル基である)、ヒドロキシル基、基:−SO(但し、Mは水素原子又はアルカリ金属である)、シアノ基、ニトロ基又はホスホン基であり、Rは、ハロゲン原子、基:−N(R(但し、Rは水素原子又は低級アルキル基である)、ヒドロキシル基、基:−SO(但し、Mは水素原子又はアルカリ金属である)、シアノ基、ニトロ基、ホスホン基及びフェニル基からなる群から選ばれた少なくとも一種の置換基を有することのある低級アルキル基又は水素原子である。)で表される化合物及びその塩から選ばれた少なくとも一種の化合物である請求項1に記載の無電解金めっき浴を安定させる方法。
The stabilizer has the general formula:
Figure 0005066691
(Wherein R 1 and R 2 are the same or different and are a hydrogen atom, a lower alkyl group, a benzyl group, a phenyl group, a halogen atom, a group: —N (R 4 ) 2 (where R 4 is a hydrogen atom or A lower alkyl group), a hydroxyl group, a group: —SO 3 M 1 (wherein M 1 is a hydrogen atom or an alkali metal), a cyano group, a nitro group or a phosphone group, R 3 is a halogen atom, Group: —N (R 5 ) 2 (where R 5 is a hydrogen atom or a lower alkyl group), hydroxyl group, group: —SO 3 M 2 (where M 2 is a hydrogen atom or an alkali metal), A lower alkyl group or a hydrogen atom which may have at least one substituent selected from the group consisting of a cyano group, a nitro group, a phosphone group and a phenyl group) and a salt thereof. Less Method of stabilizing the electroless gold plating bath of claim 1 is a kind of compound.
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