JP5051757B2 - Vapor growth apparatus and vapor growth method - Google Patents

Description

  The present invention generally relates to a vapor phase growth apparatus and a vapor phase growth method, and more preferably relates to a vapor phase growth apparatus and a vapor phase growth method for simultaneously forming films on a plurality of substrates by a vapor phase reaction.

Regarding a conventional vapor phase growth apparatus, for example, in Japanese Patent Laid-Open No. 7-235501, the consumption of reaction gas is reduced, gas particles are prevented from adhering to the inner wall of the chamber, and wafer sets can be automated. A crystal growth apparatus aimed at obtaining crystal growth with uniform film thickness and composition has been disclosed (Patent Document 1). Japanese Patent Application Laid-Open No. 8-316153 discloses a vapor phase growth apparatus aimed at making the gas supply amount uniform and reducing variations in the film thickness and film quality of the growth film (Patent Document 2). . Japanese Laid-Open Patent Publication No. 60-98618 discloses a semiconductor thin film vapor phase growth apparatus intended to obtain uniform semiconductor thin film growth with a small gas flow rate without complicating the apparatus. (Patent Document 3).
JP 7-235501 A JP-A-8-316153 JP-A-60-98618

  When film formation is performed using a vapor phase growth apparatus, a plurality of source gases are introduced into a reaction chamber provided with a substrate and a susceptor that holds and heats the substrate. These source gases cause a thermal decomposition reaction on the heated substrate to become a compound or a solid solution crystal thereof. Thereby, thin film growth such as epitaxial growth is performed on the substrate.

  Such a vapor phase growth apparatus is required to include a susceptor that holds a plurality of substrates in order to process more substrates in one growth. Accordingly, a reaction chamber having a size corresponding to the susceptor is required. On the other hand, thin film growth is performed by mixing a plurality of source gases and reacting on the substrate. Therefore, in order to grow a thin film having uniform characteristics on each substrate, it is necessary that the distribution of each source gas in the reaction chamber be uniform.

  FIG. 17 is a cross-sectional view showing an embodiment of a vapor phase growth apparatus. In FIG. 17 and subsequent figures, the gas flow is indicated by arrows.

  Referring to FIG. 17, vapor phase growth apparatus 100 includes a reaction chamber 101, a susceptor 102, and a gas introduction pipe 103. The susceptor 102 has a disk shape. The susceptor 102 holds a plurality of substrates 104. The plurality of substrates 104 are arranged in the circumferential direction. The plurality of substrates 104 are heated to a predetermined temperature by a heating device (not shown). The susceptor 102 is rotated by a motor (not shown).

  The reaction chamber 101 has a cylindrical shape corresponding to the shape of the susceptor 102. A gas introduction pipe 103 is connected to the center of the reaction chamber 101. The source gas is introduced into the reaction chamber 101 through the gas introduction pipe 103 and causes a gas phase reaction in the reaction chamber 101. The reacted source gas flows toward the outer periphery of the susceptor 102 and is exhausted to the outside of the reaction chamber 101 by an exhaust device (not shown).

  The gas introduction pipe 103 includes an intermediate multiple pipe 106 and a gas direction changing unit 107 connected to the intermediate multiple pipe 106. A gas supply unit 105 is connected to the intermediate multiple tube 106. The intermediate multiple pipe 106 flows a plurality of types of source gases flowing from the gas supply unit 105 in layers. The gas direction changing unit 107 changes the flow of the raw material gas that has passed through the intermediate multiple tube 106 into a radial flow toward the outer periphery of the susceptor 102. The gas redirecting unit 107 includes a gas outlet 108. The raw material gas flowing in the gas direction changing unit 107 is introduced into the reaction chamber 101 through the gas outlet 108. The gas supply unit 105 is configured so that the source gas flows into the intermediate multiple tube 106 from a direction other than parallel to the gas flow in the intermediate multiple tube 106 (for example, a direction perpendicular to the gas flow in the intermediate multiple tube 106). It is connected to the intermediate multiple tube 106.

  FIG. 18 is a diagram showing an example of a flow velocity distribution generated in the vapor phase growth apparatus in FIG. FIG. 19 is a diagram showing another example of the flow velocity distribution generated in the vapor phase growth apparatus in FIG. In the figure, the flow rate of the source gas is represented by the thickness of the arrow, and the thicker the arrow, the greater the flow rate.

  With reference to FIGS. 17 to 19, in the vapor phase growth apparatus 100, the following disturbance occurs in the flow of the source gas introduced into the reaction chamber 101 through the gas introduction pipe 103.

  When the flow direction of the source gas in the intermediate multiplex tube 106 and the connection direction of the gas supply unit 105 to the intermediate multiplex tube 106 are different, the flow of the source gas flowing from the gas supply unit 105 into the intermediate multiplex tube 106 is intermediate. The vector component in the connection direction of the gas supply unit 105 to the multiple tube 106 remains. For this reason, in the flow velocity of the raw material gas introduced from the gas direction changer 107 into the reaction chamber 101, a deviation due to the vector component occurs.

  More specifically, as shown in FIG. 18, when the gas supply unit 105 is connected to the intermediate multiple pipe 106 from a direction orthogonal to the gas flow in the intermediate multiple pipe 106, it is introduced into the reaction chamber 101 from the gas outlet 108. The flow rate of the raw material gas is relatively small at the phase where the gas supply unit 105 is connected (arrow 155 in the figure) and relatively large at the opposite phase (arrow 154 in the figure). Further, as shown in FIG. 19, a gas supply unit 105p corresponding to the gas supply unit 105 in FIG. 18 and a gas supply unit 105q arranged in a phase opposite to the gas supply unit 105p include an intermediate multiple tube 106. Are connected to each other, the source gas flowing into the intermediate multi-pipe 106 from the gas supply unit 105p and the source gas flowing into the intermediate multi-pipe 106 from the gas supply unit 105q collide with each other. For this reason, the flow rate of the raw material gas introduced from the gas outlet 108 into the reaction chamber 101 becomes relatively small at the phase where the gas supply portions 105p and 105q are respectively arranged (arrow 164 in the figure), and from the phase 90 It becomes relatively large at a phase shifted by an angle (arrow 165 in the figure).

  When the flow rate of the raw material gas is uneven as described above, the flow of the raw material gas is uneven in the reaction chamber 101. For this reason, the gas phase reaction becomes non-uniform, and a large variation appears in the characteristics of the thin film grown on the substrate. Therefore, in order to reduce the variation in the characteristics of the thin film, the flow of the source gas is adjusted in the gas introduction pipe 103, and the flow rate of the source gas toward the outer periphery of the susceptor 102 is made uniform over the entire circumference of the gas outlet 108. It is necessary to.

  On the other hand, as a method for adjusting the flow of the source gas, (1) a method of increasing the number of source gas supply pipes connected to the intermediate multiple pipe 106, that is, the number of gas supply sections 105, and (2) the intermediate multiple pipe 106 (3) A buffer tank is provided above the intermediate multiple pipe 106, and the raw material gas is supplied to the buffer tank. For example, a method of flowing the flow through the intermediate multi-pipe 106 after suppressing the flow deviation is conceivable.

  However, these raw material gas rectifying means have problems described below. As for (1), a large number of pipes are required, so that the pipe structure of the vapor phase growth apparatus is complicated. With regard to (2) and (3), the gas introduction pipe 103 requires a long pipe or a buffer tank, and thus the size of the apparatus cannot be avoided. Further, when the source gas species are switched, there is a problem that the source gas before switching is retained in the gas introduction pipe 103 and the switching of the source gas species is not executed smoothly. Such a problem adversely affects switching between different types of film formation when forming a multilayer film, for example, when forming a film for a light emitting element in a compound semiconductor.

  On the other hand, in Patent Document 1 described above, a rectifying plate is disposed in the middle of the reaction gas being converted into a side (horizontal) flow within the tube diameter of the gas supply head. However, in Patent Document 1, since the rectifying plate is arranged at a place where the reaction gas flows while diffusing radially in the circumferential direction, a local rectifying effect can be obtained, but the entire gas flow in the gas supply head is obtained. The effect of adjusting the bias is not obtained. In addition, since the structure of the part for changing the gas flow is complicated, it is difficult to manufacture the gas supply head to provide the current plate at the part.

  Moreover, in the above-mentioned patent document 2, the diffusion plate which has a gas ejection opening is arrange | positioned above a susceptor. However, in Patent Document 2, since the diffusion plate is disposed on the path after the plurality of types of source gases are mixed, there is a possibility that products resulting from the reaction of the source gases adhere to the rectifying plate. In this case, the operation of the apparatus becomes complicated because the current plate needs to be cleaned.

  SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to solve the above-described problems, and to provide a vapor phase growth apparatus and a vapor phase growth method in which a thin film having uniform characteristics is formed on a plurality of substrates.

The vapor phase growth apparatus according to the present invention includes a reaction chamber, a susceptor installed in the reaction chamber, and a gas introduction pipe for introducing gas into the reaction chamber. The susceptor includes a peripheral part holding a plurality of substrates and a central part surrounded by the peripheral part. The gas introduction pipe has a multiple pipe structure in which a plurality of types of gases are separated from each other. The gas introduction pipe includes a gas flow part that flows gas toward the center part, and a gas direction change part that changes the direction of the gas flowing through the gas flow part and flows the gas from the center part toward the peripheral part. The gas flows into the gas circulation part from a direction different from the gas flow direction in the gas circulation part. The vapor phase growth apparatus further includes a rectifying member disposed in the gas circulation unit. The gas circulation part includes a first part into which gas flows and a second part connected to the first part and connected to the gas direction changing part. A rectifying member is fixed to a connecting portion between the first portion and the second portion.

According to the vapor phase growth apparatus configured as described above, the rectifying member suppresses the turbulence of the gas flow caused by the mismatch between the gas inflow direction to the gas circulation portion and the gas flow direction in the gas circulation portion. . Thereby, a gas having a uniform flow velocity distribution can be introduced from the gas introduction tube into the reaction chamber, and a thin film having uniform characteristics can be grown on a plurality of substrates. In addition, since the rectifying member is fixed to the connection portion between the first portion and the second portion, the rectifying member can be provided in the gas circulation portion with a simpler configuration.

  Preferably, the rectifying member is provided so as to alleviate a deviation in the gas flow rate distribution in a plane orthogonal to the gas flow. According to the vapor phase growth apparatus configured as described above, the above effect can be achieved by providing the gas flow part with a rectifying member that alleviates the deviation of the gas flow rate distribution.

  Further preferably, when the gas flows into the gas circulation portion from the first phase centered on the center portion and does not flow from the second phase opposite to the first phase, the rectifying member is relatively in the first phase. The flow rate distribution of the gas is relatively small and relatively large in the second phase. According to the vapor phase growth apparatus configured as described above, the bias of the gas flow distribution generated between the first phase and the second phase is reduced by the rectifying member.

  Preferably, when the gas flows into the gas circulation part from the first phase centered on the central part and flows into the gas circulation part from the second phase opposite to the first phase, the rectifying member is The gas flow distribution is relatively small in the phase and the second phase and relatively large in the phase shifted from the first phase and the second phase. According to the vapor phase growth apparatus configured in this manner, the flow rate distribution of the gas generated between the first phase and the second phase and a phase shifted from these phases is alleviated by the rectifying member.

  Preferably, the rectifying member alleviates the deviation of the gas flow distribution by controlling at least one of the gas flow path area, the gas flow direction, and the magnitude of the resistance received by the gas flow. According to the vapor phase growth apparatus configured as described above, the gas flow rate distribution can be freely controlled.

  In the vapor phase growth method according to the present invention, a thin film is grown on a plurality of substrates using any of the vapor phase growth apparatuses described above. According to the vapor phase growth method configured as described above, a thin film having uniform characteristics can be grown on a plurality of substrates.

  As described above, according to the present invention, it is possible to provide a vapor phase growth apparatus and a vapor phase growth method in which a thin film having uniform characteristics is formed on a plurality of substrates.

  Embodiments of the present invention will be described with reference to the drawings. In the drawings referred to below, the same or corresponding members are denoted by the same reference numerals.

(Embodiment 1)
1 is a sectional view showing a vapor phase growth apparatus according to Embodiment 1 of the present invention. Referring to FIG. 1, in vapor phase growth apparatus 10, a crystal thin film is formed on substrate 25 by a vapor phase reaction of source gas A and source gas B introduced into reaction chamber 11. The holding gas C serves to keep the source gas A and source gas B on the susceptor 22 in the reaction chamber 11. At the same time, the holding gas C serves to prevent the product from adhering to the wall surface 11 c of the reaction chamber 11 facing the susceptor 22.

  The vapor phase growth apparatus 10 has the following configuration. Although not shown, the vapor phase growth apparatus 10 includes a gas supply device and an exhaust device.

  The vapor phase growth apparatus 10 includes a reaction chamber 11, a susceptor 22, and a gas introduction pipe 13. The reaction chamber 11 is shut off from the atmosphere. The source gas A and the source gas B cause a gas phase reaction inside the reaction chamber 11 to form a film on the substrate 25. Inside the reaction chamber 11, a susceptor 22 and a part of the gas introduction pipe 13 are arranged. The susceptor 22 has a disk shape. The reaction chamber 11 has a cylindrical shape corresponding to the shape of the susceptor 22.

  FIG. 2 is a perspective view showing an upper surface of the susceptor in FIG. Referring to FIGS. 1 and 2, a plurality of substrates 25 are accommodated in reaction chamber 11. The plurality of substrates 25 are disposed on the upper surface of the susceptor 22. The susceptor 22 holds a plurality of substrates 25.

  The susceptor 22 includes a peripheral portion 22s and a central portion 22t. The peripheral portion 22s is formed in an annularly extending region. The central portion 22t is formed in a region surrounded by the peripheral portion 22s. The plurality of substrates 25 are arranged in the peripheral portion 22s. The plurality of substrates 25 are arranged in the circumferential direction. The plurality of substrates 25 are arranged at intervals. The plurality of substrates 25 are arranged in a ring along the circumferential direction of the susceptor 22. In addition, the layout which arrange | positions the some board | substrate 25 in the peripheral part 22s is not restricted to what is shown in a figure, It changes suitably.

  The vapor phase growth apparatus 10 includes a substrate heating heater 26. The substrate heating heater 26 heats the plurality of substrates 25 held by the susceptor 22 to a predetermined temperature. A heater power supply device, a temperature sensor, and a temperature control device are connected to the substrate heating heater 26. The susceptor 22 is connected to a motor 28 as a rotation drive mechanism via a rotation shaft 27. When the film is formed on the substrate 25, the susceptor 22 is rotated by driving the motor.

  The vapor phase growth apparatus 10 includes a gas discharge unit 24. An exhaust device (not shown) is connected to the gas discharge unit 24. The gas discharge part 24 is provided on the outer periphery of the peripheral part 22 s of the susceptor 22. By driving an exhaust device (not shown), the gas after the gas phase reaction is exhausted to the outside of the reaction chamber 11 through the gas exhaust unit 24.

  The gas introduction pipe 13 is disposed at the center of the reaction chamber 11. The gas introduction pipe 13 introduces the raw material gas A, the raw material gas B, and the holding gas C into the reaction chamber 11. The gas introduction pipe 13 has a multiple pipe structure in which a plurality of types of gases are flowed in layers. In the present embodiment, since two types of source gas and one type of purge gas are used, the gas introduction pipe 13 has a three-layer structure so that the gases do not contact each other.

  The gas introduction pipe 13 forms a gas flow path 31, a gas flow path 32, and a gas flow path 33 that are partitioned from each other. A source gas A, a source gas B, and a holding gas C are circulated in the gas channel 31, the gas channel 32, and the gas channel 33, respectively. The gas flow path 31 is formed at the center of the multiple pipe structure of the gas introduction pipe 13. The gas flow path 32 is formed on the outer periphery of the gas flow path 31. The gas flow path 33 is further formed on the outer periphery of the gas flow path 32.

  The gas introduction pipe 13 includes an intermediate multiple pipe 16 and a gas direction changing portion 17. The intermediate multiple pipe 16 flows the raw material gas A, the raw material gas B, and the holding gas C from the top to the bottom in FIG. The intermediate multiple pipe 16 flows the raw material gas A, the raw material gas B, and the holding gas C toward the central portion 22 t of the susceptor 22. The intermediate multiple pipe 16 allows the source gas A, source gas B, and holding gas C to flow in one direction. The intermediate multiple pipe 16 flows the source gas A, the source gas B, and the holding gas C toward the centers of the plurality of substrates 25 arranged in the circumferential direction.

  The gas direction changing part 17 is formed continuously from the intermediate multiple pipe 16. The gas direction changing part 17 is disposed immediately above the susceptor 22. A part of the gas direction changing part 17 is arranged inside the reaction chamber 11. The gas direction change part 17 has a trumpet shape formed of a smooth curve. The gas redirecting part 17 includes a gas outlet 18. The gas outlet 18 opens into the reaction chamber 11. The gas outlet 18 extends in an annular shape. The gas direction changing part 17 changes the gas flow flowing through the intermediate multiple pipe 16 in a direction from the central part 22t of the susceptor 22 toward the peripheral part 22s. The gas direction changing unit 17 changes the gas flow flowing through the intermediate multiple pipe 16 into a radial flow toward the peripheral part 22 s of the susceptor 22.

  The raw material gas A, the raw material gas B, and the holding gas C are introduced into the reaction chamber 11 from the gas direction changing section 17 through the gas outlet 18. The source gas A, source gas B, and holding gas C introduced into the reaction chamber 11 flow radially toward the outer periphery of the susceptor 22.

  The vapor phase growth apparatus 10 includes a gas supply unit 15. The gas supply unit 15 includes a gas inlet 14. The gas inlet 14 is connected to a pipe extending from a gas supply device (not shown). The gas supply unit 15 is connected to the intermediate multiple pipe 16. Three gas supply sections 15 to which source gas A, source gas B, and holding gas C are supplied are connected to the intermediate multiple pipe 16 so as to communicate with the gas flow path 31, the gas flow path 32, and the gas flow path 33, respectively. Has been. The raw material gas A, the raw material gas B, and the holding gas C supplied from the gas supply device flow into the intermediate multiple pipe 16 through the gas supply unit 15.

  The gas supply unit 15 is connected to the intermediate multiple tube 16 from a direction orthogonal to the gas flow direction in the intermediate multiple tube 16. With such a configuration, the raw material gas A, the raw material gas B, and the holding gas C are orthogonal to the gas flow direction in the intermediate multiple pipe 16 in the direction different from the gas flow direction in the intermediate multiple pipe 16. It flows into the intermediate multiple tube 16 from the direction in which it is made.

  FIG. 3 is a cross-sectional view of the gas supply pipe taken along line III-III in FIG. With reference to FIGS. 1 to 3, in the present embodiment, gas supply unit 15 is arranged at phase X <b> 1 centered on center portion 22 t.

  In such a vapor phase growth apparatus 10, the gas that has reached the gas inlet 14 through the pipe from the gas supply apparatus flows into the intermediate multiple pipe 16 with a flow in the direction indicated by the arrow 36 in FIG. 3. When entering the intermediate multiple tube 16, the gas flow changes 90 degrees downward and flows through the tube. In this case, since the gas flow in the intermediate multiple pipe 16 flowing toward the central portion 22t retains the flow direction component when flowing into the intermediate multiple pipe 16, the intermediate multiple pipe 16 has a plane orthogonal to the gas flow. The flow distributions of the raw material gas A, the raw material gas B, and the holding gas C are biased. Specifically, each flow distribution of the raw material gas A, the raw material gas B, and the holding gas C is relatively small in the phase X1, and relatively large in the phase X2 on the opposite side of the phase X1 with respect to the center portion 22t. Become.

  The vapor phase growth apparatus 10 includes a current plate 41. The rectifying plate 41 is disposed in the intermediate multiple tube 16. The rectifying plate 41 is a disk-shaped plate corresponding to the cross-sectional shape of the intermediate multiple tube 16. A plurality of gas flow holes 42 are formed in the rectifying plate 41. The rectifying plate 41 extends in a plane orthogonal to the gas flow direction in the intermediate multiple tube 16. All of the gas flowing through the intermediate multiple pipe 16 passes through the gas flow hole 42. The gas flow hole 42 has a circular opening surface. The gas flow hole 42 may have a shape other than a circle, for example, a polygonal opening surface such as a quadrangle.

  The rectifying plate 41 is provided so as to relieve the uneven flow distribution in the intermediate multiple pipe 16. The specific form will be described. In each of the gas flow paths 31 to 33, the number of the gas flow holes 42 is relatively large in the phase X1 and relatively small in the phase X2. With such a configuration, the flow passage areas of the raw material gas A, the raw material gas B, and the holding gas C are relatively large in the phase X1 and relatively small in the phase X2 on the plane where the rectifying plate 41 is disposed. . As a result, the deviations in the flow rate distributions of the raw material gas A, the raw material gas B, and the holding gas C are alleviated.

  By providing the rectifying plate 41 in the intermediate multiple pipe 16 in this way, the flow direction component when the gas flows into the intermediate multiple pipe 16 is suppressed. The gas that has passed through the rectifying plate 41 flows radially toward the peripheral portion 22 s of the susceptor 22 through the gas direction changing portion 17. At this time, the flow rate of the gas flow adjusted by the rectifying plate 41 is uniform over the entire circumference of the gas outlet 18.

  A vapor phase growth apparatus 10 according to Embodiment 1 of the present invention includes a reaction chamber 11, a susceptor 22 installed in the reaction chamber 11, and source gas A, source gas B, and holding gas C as gases in the reaction chamber 11. And a gas introduction pipe 13 to be introduced. The susceptor 22 includes a peripheral portion 22s that holds a plurality of substrates 25, and a central portion 22t that is surrounded by the peripheral portion 22s. The gas introduction pipe 13 has a multiple pipe structure in which a plurality of types of gases are separated from each other. The gas introduction pipe 13 changes the direction of the gas flowing through the intermediate multi-pipe 16 and the intermediate multi-pipe 16 as a gas distribution part that flows gas toward the center part 22t, and flows in the direction from the center part 22t toward the peripheral part 22s. A gas direction changing unit 17. The gas flows into the intermediate multiple tube 16 from a direction different from the gas flow direction in the intermediate multiple tube 16. The vapor phase growth apparatus 10 further includes a rectifying plate 41 as a rectifying member disposed in the intermediate multiple tube 16.

  In the vapor phase growth method according to Embodiment 1 of the present invention, thin films are grown on a plurality of substrates 25 using the vapor phase growth apparatus 10.

  According to the vapor phase growth apparatus 10 and the vapor phase growth method of the first embodiment of the present invention configured as described above, the flow rate of the gas introduced into the reaction chamber 11 is uniform, so that the plurality of substrates 25 The gas phase reaction that occurs in is also uniform. For this reason, the characteristics of the thin film formed on the substrate 25 can be made uniform among the plurality of substrates 25. Thereby, an efficient film forming process can be realized with a high yield. Further, since the uniformity of the thin film characteristics is ensured by the rectifying plate 41, the total length of the intermediate multiple tube 16 can be shortened. Thereby, size reduction of an apparatus can be achieved. Further, even when the source gas species are switched, gas retention in the intermediate multiple pipe 16 is minimized, and high-quality film formation is possible.

  FIG. 4 is a cross-sectional view showing a modification of the current plate in FIG. In the figure, only the cross section of the gas flow path 32 is shown among the gas flow paths 31 to 33 to simplify the description. Referring to FIG. 4, in this modification, the number of gas circulation holes 42 is equal between phase X1 and phase X2, but the opening area of gas circulation holes 42 is relatively large at phase X1, and at phase X2. Relatively small. Even with such a configuration, the same effect as described above can be obtained.

  In FIG. 1, the gas direction changing portion 17 has a trumpet shape constituted by a smooth curve, but the shape of the gas direction changing portion is not limited to this. For example, the gas flow may be collided with a flat plate provided at the end of the intermediate multiple pipe 16 and the flow direction may be changed to a direction parallel to the flat plate.

(Embodiment 2)
FIG. 5 is an exploded view showing a gas introduction pipe of the vapor phase growth apparatus according to Embodiment 2 of the present invention. The vapor phase growth apparatus in the present embodiment basically has the same structure as that of the vapor phase growth apparatus 10 in the first embodiment. Hereinafter, the description of the overlapping structure will not be repeated.

  Referring to FIG. 5, in the present embodiment, intermediate multi-pipe 16 is configured by contacting upstream portion 16m as the first portion and downstream portion 16n as the second portion. A gas supply unit 15 is connected to the upstream portion 16m. The downstream portion 16n is connected to the gas flow conversion portion 17. The rectifying plate 41 is fixed to the joint between the upstream portion 16m and the downstream portion 16n.

  6 is an enlarged cross-sectional view of a range surrounded by a two-dot chain line VI in FIG. With reference to FIG. 6, the fixing structure of the upstream part 16m, the downstream part 16n, and the rectifying plate 41 will be described. The upstream portion 16m and the downstream portion 16n include a flange portion 16f. The rectifying plate 41 includes a flange portion 41f that is sandwiched from both sides by the flange portion 16f of the upstream portion 16m and the downstream portion 16n. Bolt holes into which the bolts 62 are inserted are formed in the flange portions 16f and 41f. The rectifying plate 41 includes a rectifying part 41h in which the gas flow holes 42 are formed, and a joining part 41g that joins the upstream part 16m and the downstream part 16n. The rectifying plate 41 is fixed to the intermediate multiple tube 16 by bolts 62 and nuts 63 while being sandwiched between the upstream portion 16m and the downstream portion 16n from both sides.

  Seal members 61 are respectively disposed between the joint portion 41g and the upstream portion 16m and the downstream portion 16n. For the seal member 61, an O-ring or gasket made of rubber, resin, metal or the like is used. With such a configuration, it is possible to prevent the gas flowing in each layer from leaking from the joint between the upstream portion 16m and the downstream portion 16n.

  According to the vapor phase growth apparatus in the second embodiment of the present invention configured as described above, the effects described in the first embodiment can be obtained similarly. In addition, in the present embodiment, the rectifying plate 41 can be provided with a simple configuration as compared with the case where the rectifying plate 41 is provided inside one intermediate multiple tube.

(Embodiment 3)
In the present embodiment, various modifications of the rectifying plate 41 in FIG. 3 will be described. In the drawing referred to in the present embodiment, only the gas flow path 31 is shown among the gas flow paths 31 to 33 in order to simplify the description.

  FIG. 7 is a cross-sectional view showing a first modification of the current plate in FIG. Referring to FIG. 7, in this modification, the vapor phase growth apparatus includes a rectifying plate 71 instead of the rectifying plate 41. A plurality of gas flow holes 72 are formed in the rectifying plate 71. Of the plurality of gas flow holes 72, the gas flow hole 72r extends so as to approach the phase X1 from the phase X2 as it goes from the upstream side to the downstream side of the gas flow. The number of gas flow holes 72r is relatively large on the phase X2 side and relatively small on the phase X1 side. According to such a configuration, the deviation of the gas flow distribution in the intermediate multiple pipe 16 is alleviated by controlling the gas flow direction.

  FIG. 8 is a cross-sectional view showing a second modification of the current plate in FIG. Referring to FIG. 8, in this modification, the vapor phase growth apparatus includes a rectifying plate 73 instead of the rectifying plate 41. A plurality of gas flow holes 74 are formed in the rectifying plate 73. The opening width D of the gas flow hole 74 disposed on the phase X2 side is larger than the opening width D of the gas flow hole 74 disposed on the phase X1 side. According to such a configuration, the gas flow in the phase X <b> 2 is further restricted by the rectifying plate 73. For this reason, the flow rate distribution of the gas in the intermediate multiple pipe 16 is relaxed through the control of the gas flow path area.

  FIG. 9 is a cross-sectional view showing a third modification of the current plate in FIG. FIG. 10 is a perspective view showing the rectifying member in FIG. 9. With reference to FIGS. 9 and 10, in this modification, the vapor phase growth apparatus includes a rectifying member 76 instead of the rectifying plate 41. The rectifying member 76 is composed of screens 76a, 76b, 76c, 76d, and 76e. The partitions 76a to 76e are sequentially arranged from the phase X1 side toward the phase X2. The partitions 76 a to 76 e extend along the gas flow direction in the intermediate multiple tube 16. The partitions 76a to 76e are arranged at intervals from each other, and gas flows between them. When the total length of the partitions 76a to 76e along the gas flow direction is L, the total length L of the partitions 76e disposed on the phase X2 side is larger than the total length L of the partitions 76a disposed on the phase X1 side. .

  With such a configuration, the magnitude of the resistance that the gas flow flowing through the intermediate multiple pipe 16 receives from the rectifying member 76 is larger on the phase X2 side than on the phase X1 side. Thereby, the flow rate distribution of the gas in the intermediate multiple pipe 16 is relaxed through control of the resistance that the gas flow receives from the rectifying member 76.

  FIG. 11 is a cross-sectional view showing a fourth modification of the current plate in FIG. 12 is a cross-sectional view of the intermediate multi-tube taken along line XII-XII in FIG. FIG. 13 is a component diagram of the rectifying member in FIG. 11.

  With reference to FIGS. 11 to 13, in this modification, the vapor phase growth apparatus includes a rectifying member 81 instead of the rectifying plate 41. The rectifying member 81 includes a plurality of X plates 81x and a plurality of Y plates 81y combined in a lattice shape. The X plate 81x and the Y plate 81y extend in the x-axis direction and the y-axis direction in FIG. 11, respectively. The x-axis direction coincides with the direction connecting the phase X1 and the phase X2. The plurality of X plates 81x are arranged in the y-axis direction at intervals. The plurality of Y plates 81y are arranged in the x-axis direction at intervals.

  A plurality of grooves 82 are formed in the X plate 81x. The Y plate 81y is formed with a plurality of grooves 83 into which the grooves 82 of the plurality of X plates 81x intersecting the Y plate 81y are respectively fitted. Since the groove 82 is formed to be inclined with respect to the gas flow in the intermediate multiple pipe 16, the Y plate 81y disposed at the end on the phase X2 side is phased from the upstream side to the downstream side of the gas flow. It is provided so as to incline in a direction close to phase 1 from X2. The inclination of the Y plate 81y arranged from the phase X2 side to the phase X1 side becomes smaller toward the phase X1. The Y plate 81y disposed at the end on the phase X1 side is provided so as to extend along the gas flow direction.

  According to such a configuration, the deviation of the gas flow distribution in the intermediate multiple pipe 16 is alleviated by controlling the gas flow direction. Compared with the embodiment shown in FIG. 8, the opening ratio of the holes through which the gas flows can be set large, so that the resistance received by the rectifying member 81 can be reduced. For this reason, it is suitable for the process of forming a film by switching the source gas species.

  According to the vapor phase growth apparatus in the third embodiment of the present invention configured as described above, the effects described in the first embodiment can be obtained similarly.

(Embodiment 4)
FIG. 14 is a cross-sectional view showing a gas introduction pipe of a vapor phase growth apparatus according to Embodiment 4 of the present invention. FIG. 15 is a cross-sectional view of the gas introduction pipe taken along line XV-XV in FIG. In FIG. 15, only the cross section of the gas flow path 32 is shown among the gas flow paths 31 to 33 in order to simplify the description. The vapor phase growth apparatus in the present embodiment basically has the same structure as that of the vapor phase growth apparatus 10 in the first embodiment. Hereinafter, the description of the overlapping structure will not be repeated.

  Referring to FIGS. 14 and 15, in the present embodiment, vapor phase growth apparatus 10 includes gas introduction portions 15p and 15q. The gas introduction part 15p is arrange | positioned at the phase X1, and the gas introduction part 15q is arrange | positioned at the phase X2 on the opposite side to the phase X1. That is, in the present embodiment, the gas flows into the intermediate multiple tube 16 from the phase X1 and the phase X2 facing each other.

  In this case, the raw material gas that has entered the intermediate multiple tube 16 from the gas introduction portions 15p and 15q collides near the middle between the gas introduction portion 15p and the gas introduction portion 15q. Due to this collision, the gas flow direction changes in a direction orthogonal to the gas inflow direction (phase X3 and phase X4 directions in FIG. 15).

  On the other hand, in the present embodiment, a rectifying plate 91 is disposed in the intermediate multiple tube 16. A plurality of gas flow holes 92 are formed in the rectifying plate 91. In each of the gas channels 31 to 33, the number of the gas flow holes 92 is relatively large in the phase X1 and the phase X2, and relatively small in the phase X3 and the phase X4. With such a configuration, deviations in the flow distributions of the raw material gas A, the raw material gas B, and the holding gas C in the intermediate multiple pipe 16 are alleviated.

  FIG. 16 is a diagram schematically showing the relationship between the gas inflow position and the position where the gas flow rate increases. Referring to FIG. 16 (A), when the gas flows into the intermediate multiple tube 16 from the phases A1, B1, C1 arranged at equal intervals, the phase U1, the phase B1 between the phase A1 and the phase B1 The gas flow rate increases at each position of phase U2 that is in the middle of phase C1 and phase U3 that is in the middle of phase C1 and phase A1.

  Referring to FIG. 16 (B), when the gas flows into the intermediate multiple tube 16 from the phases A2, B2, C2, and D2 arranged at equal intervals, the phase V1 and the phase that are intermediate between the phase A2 and the phase B2 The gas flow rate increases at each position of phase V2 that is intermediate between B2 and phase C2, phase V3 that is intermediate between phase C2 and phase D2, and phase V4 that is intermediate between phase D2 and phase A2.

  Referring to FIG. 16 (C), when the gas flows into phase A3 and phase B3 and phase C3, which are arranged 90 ° shifted on both sides of phase A3, into intermediate multiple tube 16, phase A3 and phase B3 The gas flow rate increases at each position of the phase W1 in the middle, the phase W3 in the middle of the phase A3 and the phase C3, and the phase W2 arranged on the opposite side of the phase A3.

  In each of the vapor phase growth apparatuses shown in FIGS. 16A to 16C, a rectifying member is provided so as to alleviate the uneven flow distribution in the intermediate multi-pipe 16.

  In FIG. 16, when the gas flow rate flowing from each inflow position is uniform, the flow distribution is biased such that the gas flow rate increases at a phase where the distances from the adjacent inflow positions are substantially equidistant. For this reason, in order to alleviate the unevenness of the flow distribution, a rectifying member having a rectifying distribution that relatively reduces the gas flow from upstream to downstream in the vicinity of the phase is provided.

  On the other hand, when the number of gas inflow positions is singular, the gas flow rate increases at a phase opposite to the inflow position. In this case, since the inflow position adjacent to the inflow position is itself, the gas flow rate is increased at a phase in which the distance is substantially equal in the clockwise direction and the counterclockwise direction from the inflow position. Become.

  This is because the gas flow having a vector of the clockwise direction and the counterclockwise direction of the circumferential direction is arranged even on the innermost tube arranged on the innermost side of the multiple tube. The same applies to the outer tube divided into two.

  However, in the innermost pipe, there is a gas flow from the inflow position through the central portion of the pipe, so the gas flow distribution in the circumferential direction centered on the phase that is approximately equidistant from the inflow position is the innermost pipe and the outer pipe. So slightly different. In other words, if you write a graph with the horizontal axis as the phase and the vertical axis as the flow rate, a mountain-shaped curve centered on the phase that is approximately equidistant from the inflow position will be drawn, but the peak height, base width, and slope of the mountain shape will be drawn. The shape is different between the innermost tube and the outer tube. For this reason, a rectifying member having a rectifying distribution corresponding to the tendency of the gas flow rate distribution of each pipe is used.

  In addition, when the gas flow rate flowing in from each inflow position is not uniform, the gas flow rate is shifted from the phase where the distance from the adjacent inflow position is substantially equidistant to the phase shifted according to the balance of the gas flow rate ratio and the like. The flow distribution is biased to increase. For this reason, the rectification member which has the rectification distribution which considered the position shift is used.

  According to the vapor phase growth apparatus in the fourth embodiment of the present invention configured as described above, the effects described in the first embodiment can be similarly obtained.

  In the first to fourth embodiments described above, the multiple pipes configured with the three-layer gas flow paths have been described, but multiple pipes with other layers may be configured. Further, a new vapor phase growth apparatus may be configured by appropriately combining the structures of the vapor phase growth apparatuses in the first to fourth embodiments.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

  The vapor phase growth apparatus according to the present invention is a vapor phase growth apparatus that simultaneously processes a plurality of substrates and introduces gas from the center of the reaction chamber. It is an apparatus that is uniform regardless of the direction of gas flow into the tube and enables uniform gas phase reaction in the reaction chamber, that is, film formation. This makes it possible to efficiently produce a high-quality film with a high yield, which is very useful in the production of electronic devices such as semiconductor devices produced by thin film growth.

It is sectional drawing which shows the vapor phase growth apparatus in Embodiment 1 of this invention. It is a perspective view which shows the upper surface of the susceptor in FIG. It is sectional drawing of the gas supply pipe | tube along the III-III line | wire in FIG. It is sectional drawing which shows the modification of the baffle plate in FIG. It is an exploded assembly figure which shows the gas introduction pipe | tube of the vapor phase growth apparatus in Embodiment 2 of this invention. It is sectional drawing which expands and shows the range enclosed with the dashed-two dotted line VI in FIG. It is sectional drawing which shows the 1st modification of the baffle plate in FIG. It is sectional drawing which shows the 2nd modification of the baffle plate in FIG. It is sectional drawing which shows the 3rd modification of the baffle plate in FIG. It is a perspective view which shows the rectification | straightening member in FIG. It is sectional drawing which shows the 4th modification of the baffle plate in FIG. It is sectional drawing of the intermediate | middle multiple tube along the XII-XII line | wire in FIG. FIG. 12 is a component diagram of the rectifying member in FIG. 11. It is sectional drawing which shows the gas introduction pipe | tube of the vapor phase growth apparatus in Embodiment 4 of this invention. It is sectional drawing of the gas introduction pipe along the XV-XV line | wire in FIG. It is a figure which represents typically the relationship between the inflow position of gas, and the position where the flow volume of gas becomes large. It is sectional drawing which shows one form of a vapor phase growth apparatus. It is a figure which shows an example of the flow-velocity distribution produced with the vapor phase growth apparatus in FIG. It is a figure which shows another example of the flow-velocity distribution produced with the vapor phase growth apparatus in FIG.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 Vapor growth apparatus, 11 Reaction chamber, 13 Gas introduction pipe, 16 Intermediate multi-pipe, 16m Upstream part, 16n Downstream part, 17 Gas direction change part, 22 Susceptor, 22s Peripheral part, 22t Center part, 25 Substrate, 41, 71,73 Rectifying plate, 76,81 Rectifying member.

Claims (6)

A reaction chamber;
A susceptor including a peripheral part holding a plurality of substrates and a central part surrounded by the peripheral part, and installed in the reaction chamber;
A multi-tube structure for flowing a plurality of types of gases separately from each other, and a gas introduction pipe for introducing gas into the reaction chamber;
The gas introduction pipe is
A gas flow part for flowing gas toward the central part,
A gas direction changing part that changes the direction of the gas flowing to the gas circulation part and flows in a direction from the central part toward the peripheral part,
The gas flows into the gas circulation part from a direction different from the gas flow direction in the gas circulation part,
Comprising a rectifying member disposed in the gas flow part ,
The gas flow part includes a first part into which gas flows and a second part connected to the first part and connected to the gas direction changing part,
The vapor phase growth apparatus , wherein the rectifying member is fixed to a connection portion between the first portion and the second portion .   The vapor phase growth apparatus according to claim 1, wherein the rectifying member is provided so as to alleviate a deviation in a flow rate distribution of a gas in a plane orthogonal to the gas flow. When the gas flows into the gas circulation part from the first phase centered on the central part and does not flow from the second phase opposite to the first phase,
3. The vapor phase growth apparatus according to claim 2, wherein the rectifying member is provided so as to relieve a deviation in a gas flow rate distribution that is relatively small in the first phase and relatively large in the second phase. When the gas flows into the gas circulation part from the first phase centered on the central part, and flows into the gas circulation part from the second phase opposite to the first phase,
The rectifying member is relatively small in the first phase and the second phase, and relaxes the deviation in the gas flow distribution that becomes relatively large in the phase shifted from the first phase and the second phase. The vapor phase growth apparatus according to claim 2 provided.   3. The rectifying member relaxes a deviation in a gas flow distribution by controlling at least one of a gas flow path area, a gas flow direction, and a magnitude of resistance received by the gas flow. 5. The vapor phase growth apparatus according to any one of 4 above. By a vapor growth apparatus according to claim 1, any one of 5, growing a thin film on the plurality of substrates, vapor deposition method.

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