JP5039923B2 - Electroplated interconnect structures on integrated circuit chips. - Google Patents

Description

  The present invention relates to interconnect wiring on electronic devices such as integrated circuit (IC) chips, and more particularly to Cu in a bath containing additives commonly used to obtain glossy, smooth, low stress adhesion. It relates to a seamless submicron structure without voids produced by electroplating.

  AlCu and related alloys are the preferred alloys for forming interconnects on electronic devices such as integrated circuit chips. The amount of Cu in AlCu is usually in the range of 0.3 to 4 percent.

  Replacing AlCu as the chip interconnect material with Cu and Cu alloys improves performance. The performance is improved because the specific resistance of Cu and certain Cu alloys is smaller than the specific resistance of AlCu, so that thinner lines can be used and higher wiring densities can be realized.

  The advantages of Cu metallization have been recognized throughout the semiconductor industry. Materials Research Society (MRS) Bulletin's MRS Bulletin, Vol. 18, No. 6 (June 1993) featuring academic research on the subject, and MRS Bulletin, Vol. 19, No. 8 (1994) featuring industrial research (August), copper metallization has been the subject of extensive research. 1993 Luther et al., “Planar Copper-Polyimide Back End of the Line Interconnections for ULSI Devices”, PROC. IEEE VLSI MULTILEVEL INTERCONNECTIONS CONF., Santa Clara, CA, June 8-9, 1993, p.15. Describes the fabrication of Cu chip interconnects with four metallization levels.

  Methods such as chemical vapor deposition (CVD) and electroless plating are common methods for depositing Cu. Both deposition methods usually only produce conformal deposition at best, and defects (voids and seams) due to deficiencies in lithography or reactive ion etching (RIE), especially when the top of the trench has a narrower cross section than the bottom. ) Is unavoidable. Another issue of CVD is Li et al., “Copper-Based Metallization in ULSI Structures -Part II: Is Cu Ahead of its Time as an On-chip Material”, MRS BULL., Vol. 19, No. 15 (1994). ). While the benefits of low cost are provided in electroless plating, hydrogen generation during metal deposition results in blisters and other defects that are seen as defects for packaging throughout the industry.

An electrolysis method for depositing copper, silver, or gold on a semiconductor wafer was disclosed on October 26, 1993, in J. Am. U.S. Pat. No. 5,256,274 (the '274 patent) issued to Polis. 1274 of the '274 patent shows a copper conductor with a seam with a description of “good” in the center, and FIG. 1B shows a copper conductor with a void with an explanation of “bad” in the center. It is shown. This plating bath contains approximately 90.0 g / l water (12 ounces per gallon) CuSO ₄ .5H ₂ O, 10% by volume concentrated sulfuric acid, 50 ppm chloride from hydrochloric acid, and Technic Inc., PO Box 965, Providence. TECHNI-COPPER W additive provided by RI 02901. The plating was selectively deposited through an inert mask.

  A method for fabricating a low-cost and reliable Cu interconnect structure for wiring in an integrated circuit having sub-micron sized void-free seamless conductors is described. This method involves lithographically defining and sub-micron sized trenches or holes in the insulating material to deposit an insulating material on the wafer and deposit a conductor therein to ultimately form a line or via. Forming, depositing a thin conductive layer that acts as a seed layer or plating base, depositing conductors by electroplating from a bath containing additives, and performing electrical isolation of individual lines and / or vias To planarize or chemically mechanically polish the resulting structure.

  The present invention further includes forming a seed layer on a substrate having an insulating region and a conductive region, forming a patterned resist layer on the seed layer, a seed not covered with the patterned resist from a bath containing an additive. A method of fabricating an interconnect structure on an electronic device is provided that includes electroplating a conductive material on the layer and removing the patterned resist.

  The invention further includes forming an insulating material on the substrate, lithographically defining and forming lines and / or vias for depositing interconnect conductor material therein, and forming a conductive layer that serves as a plating base. Seamlessly without voids on the electronic device, including forming a patterned resist layer on the plating base, depositing a conductive material by electroplating from a bath containing additives, and removing the resist A method of fabricating an interconnect structure having a flexible conductor is provided.

  The present invention further includes forming a seed layer on a substrate having an insulating region and a conductive region, forming a blanket layer of a conductor material from a bath containing an additive, and forming a patterned resist layer on the blanket layer. A method of forming an interconnect on an electronic device is provided that includes removing conductive material where it is not covered with a patterned resist, and removing the patterned resist. The invention further comprises C (less than 2% by weight), O (less than 1% by weight), N (less than 1% by weight), S (less than 1% by weight) formed by electroplating from a bath containing additives. And a conductor for interconnection on an electronic device comprising Cu containing a small amount of material selected from the group consisting of Cl (less than 1% by weight).

  The interconnect material may be Cu electroplated from a bath containing additives commonly used to produce a glossy, smooth, low stress deposit. The rate of Cu electroplating from such a bath is greater in the deep part of the cavity than elsewhere. Thus, this plating method has unique superfill properties and produces a void-free seamless deposit that cannot be obtained by any other method. An interconnect structure made of Cu electroplated in this way has a high resistance to electromigration and an electromigration activation energy equal to or greater than 1.0 eV. This conductor consists essentially of Cu, C (less than 2% by weight), O (less than 1% by weight), N (less than 1% by weight), S (less than 1% by weight), and Cl (less than 1% by weight) Of small amounts of atoms and / or molecular fragments.

  Cu with high electromigration resistance is electroplated from a plating solution containing additives commonly used to produce bright and ductile low stress plating deposits.

  One object of the present invention is to electroplat Cu conductors such as interconnect wiring without leaving a seam or void in the center of the conductor.

  Another object of the present invention is to electroplate Cu conductors with conductors having different widths, such as less than 1 micron and greater than 10 microns, and having a substantially uniform fill thickness. The contrast between the depth and width of the conductor is equal to or greater than 1. The via depth / width contrast may exceed one.

  Other objectives of the present invention include 1) Cu blanket deposition by electroplating, 2) double damascene fabrication (a method of fabricating two levels of metallization in one blanket deposition step), and 3) chemical mechanical polishing, etc. This is to reduce the manufacturing cost of the integrated circuit by the synergistic effect of the ability to planarize the upper surface by this method.

  These and other features, objects and advantages of the present invention will become apparent from the following detailed description of the invention when read in conjunction with the drawings. Damascene plating involves plating over the entire wafer surface followed by a planarization process that separates and defines features. Prior to plating, a plating base is deposited over the entire lithographically defined wiring pattern. A layer is applied between the plating base and the insulator to improve adhesion and prevent conductor-insulator interaction and diffusion. Schematic diagrams of the present invention are shown in FIGS. First, an insulator layer (silicon oxide, polymer) 1 covered with an etching / planarizing layer (silicon nitride) 2 and 7 is deposited on the wafer 8, and a resist pattern 3 is formed on the covered insulator to form an insulator. As shown in FIG. 5, the barrier material 4 and seed layer (Cu) 5 are subsequently deposited, Cu 6 is electroplated to fill all the features, and planarization is used as shown in FIG. Final shape. As shown in FIG. 6, lithographic multi-stage patterns can be defined on the insulator, followed by the same series of layer depositions in this cost-saving manufacturing method.

  In order to avoid the formation of voids or seams in Cu6, the electroplating rate must be greater at the lower or deeper features than elsewhere. This is illustrated in FIGS. 7-12 showing three possible cases of metal deposition. In the first case shown in FIGS. 7 and 8, by using an additive in the plating bath, the metal deposition within the feature 11 is faster than the point 12 outside the feature 11 and, as shown in FIG. No seamless deposit (super filling) is obtained. Preferential deposition within the feature may be due to the low rate of additive movement at that location, thereby increasing the local rate of Cu deposition. In particular, the inner corner has the lowest additive transfer rate and therefore the highest copper deposition rate. In the second case shown in FIGS. 9 and 10, metal deposition within the feature 14 occurs because the deposition within the low point 16 of the feature 14 is from a bath with a high degree of ion depletion. Voids and high resistivity lines or vias occur later than point 15 outside feature 14. A higher degree of ion deficiency results in a locally high overvoltage of the adhesion reaction in the plating bath. In the third case shown in FIGS. 11 and 12, there is no local ion deficiency in the liquid plating bath, and there are no additives and their beneficial effects (preferential deposition on internal features), so all locations Thus, the deposition rates are equal at points 18 inside and outside the feature 17 (conformal filling). Although conformal deposition results in nearly satisfactory deposition, seams 19 in the Cu metal 6 are inevitable with high aspect ratio lines and vias. With concave profiles, conformal filling is impossible and voids occur. It is clear that plating with superfilling as shown in FIGS. 7 and 8 is a necessary and preferred method for the damascene process. Electroplating from a properly formulated solution is one of the best ways to achieve the type of deposition shown in FIGS. Superfilling and its relevance to Cu metallization are completely unknown, for example, the above cited paper by Li et al. States that the via filling capacity of electrolytic Cu plating is "very poor".

  When superfilled with additives in the plating bath, even if the lithography process produces features or cavities 22 in the dielectric layer 1 that are narrower at the top than at the bottom, as shown in FIG. It is possible to create seamless lines and vias. Electroplating according to the present invention is one of the best ways to obtain void free seamless lines and vias. Other deposition methods, such as CVD, which only produce conformal shapes at best, are of this type of lithographic defect, in particular with reference lines 24 and arrows 27 that are narrower above the bottom and the side wall 23 is perpendicular to the top surface 26. In the presence of features or cavities 22 in dielectric 1 that form an angle of 0-20 ° as shown, it is unavoidable to cause significant defects.

  Copper plating from solutions containing additives commonly used to create flat deposits on rough surfaces can be used to achieve the superfill required to fill submicron cavities. One suitable additive system is commercially available from Enthone-OMI, Inc. of New Haven, Connecticut and is known as the SelRex Cubath M System. The manufacturer calls the additive MHy. Another suitable additive system is commercially available from LeaRonal, Inc. of Freeport, NY and is known as the Copper Gleam 2001 system. Manufacturers call this additive Copper Gleam 2001 Carrier, Copper Gleam 2001-HTL, and Copper Gleam 2001 Leveller. Another suitable additive system is commercially available from Atotech USA, Inc. of State Park, Pennsylvania and is known as the Cupracid HS system. Manufacturers of this system call it Cupracid Brightener and Cupracid HS Basic Leveller.

  Examples of specific additives that can be added to the baths of the present invention are described in several patents. U.S. Pat. No. 4,101,176, entitled “Electrodeposition of Copper” issued on August 29, 1978 to the late HG Creutz et al., Is a glossy and highly ductile reaction product from an aqueous acidic copper plating bath, It describes the use of plating bath additives, such as polyalkanol quaternary ammonium salts, that provide copper deposits with low stress and good flatness, the details of which are incorporated herein by reference.

  A. Watson et al., US Pat. No. 4,376,685, entitled “Acid Copper Electroplating Baths Containing Brightening and Leveling Additives”, issued March 15, 1983, is a glossy and flat product from an aqueous acidic copper plating bath. Describes the use of plating bath additives such as alkylated polyalkyleneimines that provide copper electrolytic deposits, which is incorporated herein by reference.

  W. US Pat. No. 4,975,159 entitled “Aqueous Acidic Bath for Electrochemical Deposition of a Shiny and Tear-free Copper Coating and Method of Using Same”, issued December 4, 1990, by Dahms et al. And adding a combination of organic additives comprising an amount of at least one substituted alkoxylated lactam as an amide group-containing compound to optimize ductility to an aqueous acidic bath, and this patent is incorporated herein by reference. Merge. Table I of US Pat. No. 4,975,159 lists some alkoxylated lactams that can be added to the baths of the present invention. Table II lists some sulfur-containing compounds having water-soluble groups such as 3-mercaptopropane-1-sulfonic acid that can be added to the baths of the present invention. Table III lists some organic compounds, such as polyethylene glycol, that can be added as surfactants to the baths of the present invention.

  US Pat. No. 3,770,598, entitled “Electrodeposition of Copper from Acid Baths”, issued November 6, 1973, by HG Kreuz et al., Provides a glossy amount to produce quaternary nitrogen from polyethyleneimine and an alkylating agent. A bath for obtaining ductile and shiny copper, comprising dissolved product of the reaction, an organic sulfur compound having at least one sulfone group, and a polyether such as polypropylene glycol. The patent is incorporated herein.

U.S. Pat. No. 3,328,273 entitled “Electrodeposition of Copper from Acid Baths” issued June 27, 1967 to HG Kreutz et al. Including an organic sulfur compound of the formula XR ₁ — (S _n ) —R ₂ —SO ₃ H wherein X is a hydrogen or sulfone group and n is an integer of 2 to 5, Describes a copper sulfate and fluoroborate bath to obtain deposits, which is incorporated herein by reference. In addition, these baths can include polyether compounds, organic sulfides with adjacent sulfur atoms, and phenazine dyes. Table I of US Pat. No. 3,328,273 lists several polysulfide compounds that can be added to the baths of the present invention. Table II lists some polyethers that can be added to the baths of the present invention.

  Additives are added to the bath to achieve various purposes. The bath can contain a copper salt and a mineral acid. Additives can be included so that a specific film microstructure, including a film size or particle size that is large compared to randomly oriented particles, occurs in the conductor. Also, an additive may be added to the bath so that a molecular fragment containing an atom selected from the group consisting of C, O, N, S, and Cl is taken into the conductor material and the electromigration resistance is higher than that of pure copper. it can. In addition, additives can be added to the bath so that certain film microstructures are formed in the conductor, including film thickness or particle size that is large compared to randomly oriented particles, and electromigration behavior is improved over non-electroplated copper. It can also be added.

  FIG. 14 shows a cross-sectional view of the cavity filling behavior of a conventional plating solution containing 0.3M cupric sulfate and 10% by volume sulfuric acid. The plating was interrupted before the cavities were completely filled and the deposit thickness at various locations of the feature was measured, thereby determining the type of filling. It was found that a conformal deposit of Cu30 was obtained. However, the deposits obtained by adding chloride ions and MHy additive to the same solution showed super-filling as shown in FIG. The deposition speed in the deep part in the feature is larger than that in other places. Finally, the deposit of Cu 36 shown in FIG. 15 is seamless with no voids because the plating speed inside the feature is larger than the outside of the feature. The MHy concentration that results in superfilling is in the range of about 0.1 to about 2.5% by volume. The chloride ion concentration is in the range of 10 to 300 ppm.

  Copper sulfate in the range of 0.1 to 0.4 M, sulfuric acid in the range of 10 to 20% by volume, chlorine in the range of 10 to 300 ppm, LeaRonal additive Copper Gleam 2001 Carrier in the range of 0.1 to 1% by volume, Copper Similar superfill results are obtained from solutions containing Gleam 2001 HTL in the range of 0.1 to 1% by volume and Copper Gleam 2001 Leveller in the range of 0.1 to 1% by volume. Finally, a solution containing copper sulfate, sulfuric acid, chloride ions and the Atotech additive Cupracid Brightener in the above ranges in the range of 0.5 to 3% by volume and Cupracid HS Basic Leveller in the range of 0.01 to 0.5% by volume. The same super-filling result can be obtained from.

  The plating method using the additives described so far is disclosed in P.I. When implemented in a conventional plating cell, such as the paddle plating cell described in Andricacos et al., US Pat. Nos. 5,516,412 and 5,312,532 and US Pat. No. 3,652,442, a submicron high aspect ratio feature or cavity Causes superfilling. However, a plating cell that supports the substrate surface in contact with only the free surface of the electrolyte, such as S.D. issued July 13, 1982, which is incorporated herein by reference. Implementation of this method in the cup plating cell described in Aigo U.S. Pat. No. 4,339,319 further provides the following benefits. The benefit is superfilling of wide cavities in the 1-100 micron range that may exist between narrow (submicron) features or cavities.

  In plating cells in which the substrate is immersed in the electrolyte, wide features in the range of 1-100 microns are slower to fill than narrow features having a width of less than 1 micron, such as 0.1 microns or more, and thus wide features are A longer plating time and polishing time are required to produce a planarized structure having no depressions or recesses on the upper plating surface.

  In contrast, in cup plating cells, when the substrate surface to be plated during plating is held in contact with the meniscus of the electrolyte, cavities of significantly different widths such as 1 micron or less and 10 microns or more are rapidly and Filled uniformly at the same speed.

  The meniscus of the electrolyte is the curved upper surface of the liquid column. This curved upper surface becomes convex as by a capillary or by a liquid flow such as a rising liquid.

  FIG. 16 is a cross-sectional view of a substrate 60 having a top layer of dielectric 61 such as silicon dioxide with surface features or cavities 62 or 63 formed therein for damascene wiring. Cavity 62 has a width of less than 1 micron and cavity 63 has a width in the range of 1-100 microns. A liner 64 provides adhesion to the dielectric 61 and a metal diffusion barrier that is subsequently plated. The liner 64 can be made conductive to act as a plating base for electroplating, or another plating base layer can be added.

  FIG. 17 is a cross-sectional view of a substrate 60 plated with a submerged cell and having sufficient metal electrolytic deposit 66 to fill the cavity 62 and fill the wide cavity 63. In FIG. 17, wide features 63 are slower to fill than narrow or submicron features 62. The top surface 67 has a recess 68 above the feature 63 with respect to the average height of the metal 66.

  In FIG. 17 and FIG. 18, the same symbols are used for functions corresponding to the apparatus of FIG. 16 and FIG.

  FIG. 18 is a cross-sectional view of a substrate 60 plated with a meniscus cup plating cell and having an electrolytic deposit of metal 66 that may be sufficient to fill the cavity 62 and fill the wide cavity 63. As shown in FIG. 18, the substrate can be placed in contact with the surface of the bath. The bath can be allowed to flow at the bath surface.

  In FIG. 18, wide features 63 are filled at the same rate as narrow features 62. The top surface 69 has a recess on the feature 63 that is very small relative to the average height of the metal 66. Accordingly, aspects of the present invention are described that perform plating in a cup plating cell to achieve uniform superfilling of narrow and wide features. The superior performance of meniscus plating is believed to be due to the higher concentration of surfactant additive molecules at the gas-liquid interface and possibly different orientations. These molecules may begin to redistribute when the substrate is introduced, but the residual effect probably lasts for several minutes of plating time.

  The electroplated Cu metal 66 shown in FIGS. 17 and 18 consists essentially of Cu, but O (less than 1% by weight), N (less than 1% by weight), S (less than 1% by weight), or Cl ( A small amount of C (less than 2% by weight) and / or molecular fragments may also be included, including less than 1% by weight). These additional components appear to be produced by decomposition of the additive and then introduced into the deposit 66 in the form of molecular fragments rather than atoms. Chlorine is co-adsorbed by a synergistic action that activates the action of the additive. As a result, these inclusions are at the grain boundaries and therefore do not affect the resistivity of the plated metal. In fact, the result of measuring the resistivity of plated Cu is less than 2 μΩcm. Also, because it is at the grain boundary of Cu, it is believed that the same molecule gives electroplated copper much better electromigration resistance than pure copper deposited by other methods.

  The particle size of the electroplated Cu is generally larger than that produced by other Cu deposition techniques (see FIGS. 19a-19d and 20a-20d). FIGS. 19a to 19d are a particle orientation map, a particle contrast map, an inverse pole figure, and a (111) pole figure of the same region of a 1 micron thick Cu film, respectively. The particle size is about 1.4 microns and the crystal structure is random. 20a to 20d are a particle orientation map, a particle contrast map, a reverse pole figure, and a (111) pole figure of the same region of a Cu film formed by PVD having a thickness of 1 micron. The particle size is about 0.4 microns and the membrane has a strong (111) / (100) crystal structure.

  The crystallographic orientation (also known as texture) of the plated Cu is much more random than the unplated Cu film (see FIGS. 19a-19d and 20a-20d). This random orientation is indicated by the uniform distribution of particles in the reverse pole figure or (111) pole figure (see FIGS. 19a to 19d). This is substantially different from that seen with unplated Cu films. For example, see FIGS. 20a-20d, where there is substantial (100) and (111) texture in this PVD Cu film.

  The electromigration resistance of electroplated Cu and pure Cu is referenced in MRS Bulletin Vol. 18 No. 6 (June 1993) and Vol. 19 No. 8 (August 1994), incorporated herein by reference. Is a function of the activation energy measured by the method. The activation energy of electroplated Cu is equal to or greater than 1.0 eV. Further, FIGS. 21a and 21b show a comparison of the plating film drift rate with respect to the PVD film. Apparently, the plated Cu shows little resistance over time, but the resistance of the PVD Cu film increases dramatically. The change in resistance is related to the amount of electromigration damage in the Cu line. Clearly, the plated Cu has a much improved electromigration behavior than PVD Cu. The activation energy of plated Cu is 1.1 to 1.3 eV, but the activation energy of PVD Cu is quite low (0.7 to 0.8 eV).

  The value of the present invention goes beyond the implementation of a damascene structure. Increased resistance to electromigration due to the presence of atoms and / or molecular fragments containing C, O, N, S, and Cl or both is plated through a mask on a planar base as shown in FIGS. By plating through a mask onto a base with holes as shown in FIGS. 22 and 27 to 31 or as shown in FIGS. 22, 23 and 32 to 35 Also advantageous is a conductor element fabricated by performing blanket plating followed by patterned etching.

  A method of plating through a mask on a flat base is shown in FIGS. FIG. 22 shows the insulating layer 1. FIG. 23 shows a seed layer (Cu) 5 formed on the insulating layer 1. A barrier material 4 (not shown) may be placed between the insulating layer 1 and the seed layer 5. FIG. 24 shows a resist 71 patterned on the seed layer 5. FIG. 25 shows Cu 6 after electroplating through resist 71. FIG. 26 shows the structure of FIG. 25 in which the resist 71 is removed and the seed layer 5 is removed where it is not protected by Cu6. FIG. 26 shows the patterned Cu layer 6 on the patterned seed layer 5.

  A method of plating through a mask on a base having holes is shown in FIGS. 22 and 27 to 31. FIG. FIG. 22 shows the insulating layer 1. FIG. 27 shows a channel 72 formed in the insulating layer 1. FIG. 28 shows a seed layer (Cu) 5 formed on the insulating layer 1. A barrier material 4 (not shown) can also be formed under the seed layer (Cu) 5. FIG. 29 shows a resist 71 patterned on the seed layer 5. FIG. 30 shows Cu 6 in the channel 72 and on the seed layer 5 deposited by plating through a mask or resist 71. FIG. 31 shows Cu6 from which the resist 71 has been removed and the seed layer 5 has been removed where it is not protected by Cu6. It should be noted that the superfill attribute of the plating method of the present invention makes it possible to fill cavities or features in a perforated base without leaving voids or seams.

  The process of pattern etching following blanket plating is shown in FIGS. 22, 23 and 32 to 35 for the formation of patterned lines on the insulating layer. FIG. 22 shows the insulating layer 1. FIG. 23 shows the barrier layer 4 formed on the insulating layer 1. A seed layer (Cu) 5 is formed on the upper surface of the barrier layer 4. The Cu blanket layer 76 is formed by electroplating on the seed layer 5 as shown in FIG. A resist layer 71 is formed on the blanket layer 76 and patterned by lithography as shown in FIG. FIG. 34 shows a blanket layer 76 that has been patterned by etching or other removal of areas not protected by resist 71. FIG. 35 shows the patterned blanket layer 76 with the resist 71 removed.

  2 to 15 and 22 to 35 use names similar to the corresponding functions of the apparatus of the previous figure or FIG.

  A method for making an interconnect structure on an electronic device, and electromigration resistance due to C, O, N, S, and Cl atoms and / or molecular fragments, large particle size and random compared to film thickness While Cu conductors having specific microstructure features such as crystal orientation have been described and illustrated, modifications and changes can be made without departing from the broad scope of the invention which is limited only by the claims appended hereto. It will be apparent to those skilled in the art.

Sectional view of intermediate structure showing formation of interconnect wiring. Sectional view of intermediate structure showing formation of interconnect wiring. Sectional view of intermediate structure showing formation of interconnect wiring. Sectional view of intermediate structure showing formation of interconnect wiring. Sectional view of intermediate structure showing formation of interconnect wiring. The figure which shows the multistage wiring pattern formed by 1 plating step. FIG. 4 shows an initial stage of deposition, where the deposition rate at the depth within the feature is greater than the deposition rate outside the feature. FIG. 4 shows a late stage of deposition, where the deposition rate inside the feature is greater than the deposition rate outside the feature. FIG. 4 shows an initial stage of deposition where the deposition rate inside the feature is slower than the deposition rate outside the feature. FIG. 4 shows a late stage of deposition where the deposition rate inside the feature is slower than the deposition rate outside the feature. FIG. 4 shows an initial stage of deposition where the deposition rate is the same inside and outside the feature. FIG. 4 shows a late stage of deposition where the deposition rate is the same inside and outside the feature. Sectional view of a series of plating profiles. FIG. 3 is a cross-sectional view of a feature electroplated using a plating bath without an additive. FIG. 3 is a cross-sectional view of a feature electroplated using a plating bath containing an additive. 1 is a cross-sectional view of a substrate having submicron and wide cavities to be plated. Sectional drawing of the board | substrate of FIG. 16 plated continuously in the wafer immersion type plating tank. Sectional drawing of the board | substrate of FIG. 16 continued plating in the meniscus type plating tank (cup plating apparatus) which makes the wafer surface contact the upper surface of an electrolyte or a meniscus. A to D are diagrams showing a particle orientation map, a particle contrast map, an inverse pole figure, and a (111) pole figure in the same region of a plated Cu film having a thickness of 1 micron. In the figure, the particle size is about 1.4 microns and the crystal structure is random. A to D show a particle orientation map, a particle contrast map, a reverse pole figure, and a (111) pole figure in the same region of a PVD (physical vapor deposition, magnetron sputter deposition) Cu film having a thickness of 1 micron. The particle size is about 0.4 microns and the membrane has a strong (111) / (100) crystal structure. FIGS. 4A to 4D are diagrams showing changes in resistance of plated Cu as a) with respect to a) CVD Cu film and b) PVD Cu film. The change in resistance is related to the amount of electromigration damage in the Cu line. Clearly, the plated Cu exhibits a much improved electromigration behavior over CVD or PVD Cu. The activation energy of plating Cu is 1.1 to 1.3 eV, and the value of Cu in PVD is considerably low (0.7 to 0.8 eV). Sectional drawing which shows the plating through the mask on a plane base. Sectional drawing which shows the plating through the mask on a plane base. Sectional drawing which shows the plating through the mask on a plane base. Sectional drawing which shows the plating through the mask on a plane base. Sectional drawing which shows the plating through the mask on a plane base. Sectional drawing which shows the plating through the mask on the base with a hole. Sectional drawing which shows the plating through the mask on the base with a hole. Sectional drawing which shows the plating through the mask on the base with a hole. Sectional drawing which shows the plating through the mask on the base with a hole. Sectional drawing which shows the plating through the mask on the base with a hole. Sectional drawing which shows blanket plating and subsequent pattern etching. Sectional drawing which shows blanket plating and subsequent pattern etching. Sectional drawing which shows blanket plating and subsequent pattern etching. Sectional drawing which shows blanket plating and subsequent pattern etching.

Claims (10)

A method of manufacturing an interconnect structure having seamless conductors without voids on an electronic device, comprising:
Forming an insulating material on the substrate;
Lithographically defining and forming recesses in the insulating material for submicron lines and / or submicron vias to which the interconnect conductor material is deposited;
Forming a conductive layer serving as a plating base on the insulating material;
The step of depositing Cu as the conductor material by electroplating from a bath containing the additive using a damascene process so that it is seamlessly void free, the additive added to the bath being By increasing the plating rate in the depth direction along the side wall of the recess, it prevents the formation of seams or voids in the conductor containing copper, and includes a specific particle size that is larger than the film thickness. Producing a film microstructure within the conductor to improve electromigration behavior over non-electroplated Cu , and planarize the resulting structure to perform electrical isolation of individual lines and / or vias Step,
Including methods. From the group consisting of C (less than 2% by weight), O (less than 1% by weight), N (less than 1% by weight), S (less than 1% by weight), and Cl (less than 1% by weight) in the conductor material. including the selected atom, further comprising the step of adding to said bath additives to capture atoms or molecular fragments or both the method of claim 1. Copper salt, mineral acid, and one or more selected from the group consisting of mercaptopropane sulfonic acid, polyethylene glycol, polypropylene glycol, polyalkanol quaternary ammonium salt, alkylated polyalkylimine, phenazine, substituted alkoxylated lactam further comprising the method of claim 1 the step of electroplating a plating solution containing additives. The method of claim 3 , wherein the plating solution contains a small amount of chloride ions in the range of 10-300 ppm. The method according to claim 3 , wherein the Cu salt is cupric sulfate. The method of claim 3 , wherein the mineral acid is sulfuric acid. From the group consisting of C (less than 2% by weight), O (less than 1% by weight), N (less than 1% by weight), S (less than 1% by weight), and Cl (less than 1% by weight) in the conductor material. 4. The method of claim 3 , further comprising the step of adding an additive to the bath to incorporate a small amount of atoms and / or molecules containing selected atoms. The method of claim 1 , wherein the copper is deposited as a double damascene structure.   The method of claim 1, wherein the depositing includes positioning the surface of the bath in contact with an upper surface of the substrate. The method of claim 9 , wherein the depositing comprises flowing a surface of the bath, wherein the bath is a cup plating apparatus.

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