JP5029640B2 - Solid-state imaging device, electronic apparatus, and manufacturing method of solid-state imaging device - Google Patents

Description

  The present invention relates to a solid-state imaging device, an electronic apparatus, and a method for manufacturing a solid-state imaging device.

  Electronic devices such as digital video cameras and digital still cameras include solid-state imaging devices. For example, a CCD (Charge Coupled Device) type image sensor is provided as a solid-state imaging device.

  In the solid-state imaging device, for example, an imaging region in which a plurality of pixels are arranged in a matrix in the horizontal direction and the vertical direction is provided on the surface of the substrate. In the imaging region, a plurality of photoelectric conversion units that receive light from the subject image and generate signal charges are formed so as to correspond to a plurality of pixels. For example, a photodiode is formed as the photoelectric conversion unit.

  A color filter is provided above the photoelectric conversion unit, and the photoelectric conversion unit is configured to receive light colored by the color filter. The color filter includes, for example, three primary color layers, and the three primary color layers are arranged in a Bayer array. Further, a microlens is provided above the color filter, and the light collected by the microlens is configured to enter the photoelectric conversion unit via the color filter (for example, a patent). Reference 1).

  In addition, it has been proposed to arrange an intra-layer lens between the photoelectric conversion unit and the microlens. The in-layer lens is provided in order to efficiently irradiate the photoelectric conversion portion with the light incident through the on-chip lens (see, for example, Patent Document 2 and Patent Document 3).

  In the above solid-state imaging device, an infrared cut filter is provided to cut off infrared light other than visible light in incident light.

  Infrared cut filters are roughly classified into light absorption types such as colored glass filters and light reflection types using an inorganic interference multilayer film.

  FIG. 26 is a diagram illustrating the spectral transmission characteristics of the infrared cut filter. In FIG. 26, the broken line indicates the case of the light absorption type, and the solid line indicates the case of the light reflection type.

  As shown by the broken line in FIG. 26, in the case of the light absorption type, the infrared ray is cut by absorbing the infrared ray. However, a large amount of light in a wavelength range other than the cut wavelength range corresponding to the infrared ray is also absorbed. May be. On the other hand, as shown by a solid line in FIG. 26, in the light reflection type using the inorganic interference multilayer film, most of the light in the wavelength range other than the cut wavelength range is transmitted. Specifically, the light reflection type transmits more red component light than the light absorption type.

  For this reason, in the solid-state imaging device, a light reflection type infrared cut filter using an inorganic interference multilayer film is preferably used to improve sensitivity (see, for example, Patent Document 4).

JP 2001-267543 A JP 2004-304148 A Japanese Patent Laid-Open No. 11-103037 JP-A-2005-109196

  A solid-state imaging device is required to have a fine cell size (pixel size). For this reason, when the cell size is miniaturized, the output (spectral output) differs depending on the color, and the image quality of the color captured image may deteriorate.

  FIG. 27 is a diagram illustrating a result of performing a wave simulation on a state in which parallel light incident on a solid-state imaging device is transmitted through a microlens, a color filter, and an in-layer lens. In FIG. 27, (a) shows the case of green light, and (b) shows the case of red light. FIG. 27 shows that the brighter the light, the higher the light intensity.

  As shown in FIG. 27, in a solid-state imaging device having a fine cell size, in the case of long wavelength red light (FIG. 27B), in the case of green light having a shorter wavelength than red light (FIG. 27A )) More susceptible to diffraction and scattering. For this reason, red light is less likely to be accurately collected on the light receiving surface of the photodiode than green light, and sensitivity characteristics may deteriorate. The same can be said for blue light because it has a shorter wavelength than red light.

  In order to improve this problem, it is conceivable to appropriately adjust the structure of the above-described intralayer lens.

  FIG. 28 is a diagram illustrating a spectral output in the solid-state imaging device. FIG. 28 shows a red component output Vr, a green component spectral output Vg, and a blue component spectral output Vb.

  Here, an intra-layer lens having the same shape can be provided for each color pixel to improve the red spectral output Vr. However, as shown in FIG. 28, the red component output Vr may be significantly higher than the spectral outputs Vg and Vb of other colors.

  In this case, it is necessary to adjust the camera system so as to achieve white balance. However, when the red sensitivity is extremely high as described above, it is difficult to adjust. For this reason, the image quality of a captured image may deteriorate.

  Further, due to the light reflection type infrared cut filter using the above-described inorganic interference multilayer film, a ghost may occur in the color captured image, and the image quality may be deteriorated. Specifically, when incident light that has passed through each part is reflected and returns to a light reflection type infrared cut filter, the light is reflected again by the infrared cut filter and enters another pixel. In some cases, a ghost may occur in the captured image.

  In particular, among the three primary colors of colored light, red light having a long wavelength is reflected by a light reflection type infrared cut filter, unlike other colored lights.

  Further, since green light and blue light other than red light may be reflected by members other than the infrared cut filter and may enter another pixel, similarly, a ghost may occur in the captured image.

  As described above, in an electronic device such as a solid-state imaging device and a camera including the solid-state imaging device, the image quality of the captured image may be reduced as the pixels are miniaturized.

  Therefore, the present invention provides a solid-state imaging device, an electronic apparatus, and a method for manufacturing the solid-state imaging device that can improve the image quality of the captured image.

The solid-state imaging device of the present invention receives a plurality of signal charges by receiving incident light incident on a light-receiving surface in an imaging region of a substrate through an infrared cut filter constituted by a reflective inorganic interference multilayer film. a photoelectric conversion unit includes a color filter provided above the light-receiving surface in the imaging region of the substrate, the color filter, the incident light green, light receiving colored the color of red or blue The filter area | region which permeate | transmits to the surface side is distribute | arranged by the Bayer arrangement | sequence, and the black pigment | dye is contained in the said filter area | region of red .
Other solid-state imaging devices of the present invention have a plurality of photoelectric conversion units and color filters, as in the above-described solid-state imaging device, and the red filter region contains more black pigment than the green and blue filter regions. Is doing .

Another solid-state imaging device of the present invention includes a reflection-type inorganic interference multilayer film, and is provided in an infrared cut filter that cuts an infrared component of incident light, and an imaging region of a substrate, and passes through the infrared cut filter. a plurality of photoelectric conversion units incident light to generate a received light to signal charges Te receiving surface that is, a color filter provided between the light-receiving surface in the imaging region of the substrate and the infrared cut filter, the A microlens that is provided between the color filter and the infrared cut filter in the imaging region of the substrate, and that collects the incident light on the light receiving surface side; and a photoelectric conversion unit in the imaging region of the substrate. An in-layer lens provided so as to be interposed between the light receiving surface and the microlens, and condensing the incident light on the light receiving surface side. A plurality of microlenses and intra-layer lenses are arranged so as to correspond to the plurality of photoelectric conversion units in the imaging region, and the color filter is configured to color the incident light in a first color. A coloring layer; and a second coloring layer that colors the incident light into a second color that is different from the first color and has a shorter wavelength than the first color. Each of the first colored layer and the second colored layer is arranged to correspond to the plurality of photoelectric conversion units in the imaging region, and the first colored layer and the second colored layer in the imaging region of the substrate A black pigment-containing layer containing a black pigment is provided between the light receiving surface.

An electronic apparatus according to the present invention includes a solid-state imaging device, and an infrared cut filter that is disposed on a light incident side of the solid-state imaging device and includes a reflective inorganic interference multilayer film. The solid-state imaging device is provided in the imaging region of the substrate, and is provided above the light receiving surface in the imaging region of the substrate, and a plurality of photoelectric conversion units that receive incident light on the light receiving surface and generate signal charges. It has been a color filter, wherein the color filter, the incident light green filter region for transmitting to the side of the light receiving surface is colored the color of red or blue are arranged in Bayer array, red The filter region contains black pigment.
In the other electronic device of the present invention, the solid-state imaging device has a plurality of photoelectric conversion units and a color filter, for example, the first colored layer in the red filter region is the same as the electronic device. For example, it is formed so as to contain more black pigment than the second colored layer in other filter regions of green or blue .

Another electronic apparatus according to the present invention includes a solid-state imaging device and an infrared cut filter that includes a reflective inorganic interference multilayer film and cuts an infrared component of incident light incident on the solid-state imaging device. The solid-state imaging device is provided in the imaging region of the substrate, receives a plurality of photoelectric conversion units that receive incident light on the light receiving surface, and generates a signal charge, and the light receiving surface in the imaging region of the substrate. A color filter provided above; a microlens provided above the color filter in the imaging region of the substrate; and condensing the incident light on the light receiving surface side; and in the imaging region of the substrate. An interlayer lens that is disposed between the light receiving surface of the photoelectric conversion unit and the microlens and collects the incident light on the light receiving surface side; A plurality of the lolens and the intra-layer lenses are arranged so as to correspond to the plurality of photoelectric conversion units in the imaging region, and the color filter is configured to color the incident light in a first color. And a second colored layer that colors the incident light to a second color that is different from the first color and has a shorter wavelength than the first color, the first color Each of the colored layer and the second colored layer are arranged so as to correspond to the plurality of photoelectric conversion units in the imaging region, and the first colored layer and the light receiving portion in the imaging region of the substrate. A black pigment-containing layer containing a black pigment is provided between the surface and the surface.

A manufacturing method of a solid-state imaging device of the present invention is a manufacturing method of a solid-state imaging device in which light is incident through an infrared cut filter formed of a reflective inorganic interference multilayer film, and the incident light is incident on a light receiving surface. A photoelectric conversion unit forming step in which a plurality of photoelectric conversion units that receive light and generate signal charges are provided in an imaging region of the substrate, and the incident light is colored in green, red, or blue and transmitted to the light receiving surface side A color filter forming step of providing a color filter in which the filter region is arranged in a Bayer arrangement above the light receiving surface in the imaging region of the substrate, and in the color filter forming step, the red filter region The color filter is formed so as to contain a black pigment therein.

In the present invention, preferably, in the color filter forming step, the color filter is formed so that a larger amount of black pigment is contained in the red filter region than in the green and blue filter regions.
Alternatively, preferably, in the color filter forming step, the incident light is colored in green, red, or blue to form a colored layer that is transmitted, and between the red colored layer and the light receiving surface , including a black dye-containing layer forming step of selectively forming a black dye-containing layer containing a black dye, the.

  In the present invention, a layer containing a black pigment is provided above the light receiving surface to adjust the amount of light incident on the light receiving surface.

  ADVANTAGE OF THE INVENTION According to this invention, the manufacturing method of a solid-state imaging device, an electronic device, and a solid-state imaging device which can improve the image quality of a captured image can be provided.

FIG. 1 is a configuration diagram showing a configuration of a camera 200 in Embodiment 1 according to the present invention. FIG. 2 is a plan view illustrating the outline of the overall configuration of the solid-state imaging device 1 according to the first embodiment of the present invention. FIG. 3 is a diagram illustrating a main part of the solid-state imaging device 1 according to the first embodiment of the present invention. FIG. 4 is a diagram showing the color filter 51 in the first embodiment according to the present invention. FIG. 5 is a diagram illustrating a main part provided in each step of the method for manufacturing the solid-state imaging device 1 in the first embodiment according to the present invention. FIG. 6 is a diagram illustrating the main part provided in each step of the manufacturing method of the solid-state imaging device 1 according to the first embodiment of the present invention. FIG. 7 is a diagram illustrating a main part provided in each step of the manufacturing method of the solid-state imaging device 1 in the first embodiment according to the present invention. FIG. 8 is a diagram illustrating a main part provided in each step of the manufacturing method of the solid-state imaging device 1 in the first embodiment according to the present invention. FIG. 9 is a diagram illustrating a main part provided in each step of the manufacturing method of the solid-state imaging device 1 in the first embodiment according to the present invention. FIG. 10 is a diagram showing the spectral transmission characteristics of the red filter layer 51R in the first embodiment of the present invention. FIG. 11 is a diagram showing the spectral output of the solid-state imaging device 1 in the first embodiment according to the present invention. FIG. 12 is a diagram for explaining the ghost phenomenon. FIG. 13 is a diagram for explaining the ghost phenomenon. FIG. 14 is a diagram for explaining the ghost phenomenon. FIG. 15 is a diagram for explaining the ghost phenomenon. FIG. 16 is a diagram for explaining that the occurrence of the ghost phenomenon is suppressed in the first embodiment according to the present invention. FIG. 17 is a diagram illustrating a main part of the solid-state imaging device 1b according to the second embodiment of the present invention. FIG. 18 is an enlarged view showing the black pigment-containing layer 51K in the second embodiment according to the present invention. FIG. 19 is a diagram illustrating a main part provided in each step of the manufacturing method of the solid-state imaging device 1b in the second embodiment according to the present invention. FIG. 20 is a diagram illustrating a main part provided in each step of the manufacturing method of the solid-state imaging device 1b in the second embodiment according to the present invention. FIG. 21 is a diagram illustrating a main part provided in each step of the manufacturing method of the solid-state imaging device 1b in the second embodiment according to the present invention. FIG. 22 is a diagram illustrating a main part provided in each step of the manufacturing method of the solid-state imaging device 1b in the second embodiment according to the present invention. FIG. 23 is a diagram showing the spectral characteristics of the black pigment-containing layer 51K in the first embodiment according to the invention. FIG. 24 is a diagram illustrating a main part of the solid-state imaging device 1c according to the third embodiment of the present invention. FIG. 25 is a diagram for explaining how the occurrence of the ghost phenomenon is suppressed in the third embodiment according to the present invention. FIG. 26 is a diagram illustrating spectral characteristics of the infrared cut filter. FIG. 27 is a diagram illustrating a result of performing a wave simulation on a state in which parallel light incident on a solid-state imaging device is transmitted through a microlens, a color filter, and an in-layer lens. FIG. 28 is a diagram illustrating a spectral output in the solid-state imaging device.

  Embodiments of the present invention will be described below with reference to the drawings.

The description will be given in the following order.
1. Embodiment 1 (when black pigment is contained in a red filter)
2. Embodiment 2 (when a black pigment-containing layer is provided under the red filter)
3. Embodiment 3 (when black pigment is contained in each of the three primary color filters)
4). Other

<1. Embodiment 1>
[Device configuration]
(1) Overall Configuration of Camera FIG. 1 is a configuration diagram showing the configuration of a camera 200 in Embodiment 1 according to the present invention.

  As shown in FIG. 1, the camera 200 includes a solid-state imaging device 1, an optical system 201, an infrared cut filter 202, a drive circuit 203, and a signal processing circuit 204.

  The solid-state imaging device 1 is configured to receive incident light (subject image) H incident through an optical system 201 and an infrared cut filter 202 on an imaging surface PS and generate a signal charge. A detailed configuration of the solid-state imaging device 1 will be described later.

  The optical system 201 includes, for example, a plurality of optical lenses, and focuses incident light H on the imaging surface PS of the solid-state imaging device 1.

  The infrared cut filter 202 is disposed between the optical system 201 and the solid-state imaging device 1, cuts an infrared component included in the incident light H, and emits it to the imaging surface PS of the solid-state imaging device 1.

  In the present embodiment, the infrared cut filter 202 is a so-called interference filter, and is formed of a reflective inorganic interference multilayer film.

  The drive circuit 203 outputs various drive signals to the solid-state imaging device 1 and the signal processing circuit 204 to drive the solid-state imaging device 1 and the signal processing circuit 204, respectively.

  The signal processing circuit 204 generates a digital image for the subject image by performing signal processing on the raw data output from the solid-state imaging device 1.

(2) Overall Configuration of Solid-State Imaging Device FIG. 2 is a plan view schematically showing the overall configuration of the solid-state imaging device 1 in Embodiment 1 according to the present invention.

  As shown in FIG. 2, the solid-state imaging device 1 is, for example, an interline type CCD image sensor, and the subject image is captured in the imaging area PA. In the imaging area PA, as shown in FIG. 2, a photoelectric conversion unit P, a charge reading unit RO, and a vertical transfer register unit VT are formed.

  As shown in FIG. 2, a plurality of photoelectric conversion units P are provided in the imaging region PA, and each is arranged in the horizontal direction x and the vertical direction y. That is, a plurality of pixels that capture a subject image are arranged in a matrix. In the vicinity of the plurality of photoelectric conversion units P, element isolation units SS are provided so as to separate the photoelectric conversion units P from each other. The photoelectric conversion unit P is configured to generate signal charges by receiving light from the subject image and performing photoelectric conversion on the light receiving surface JS.

  As shown in FIG. 2, a plurality of charge readout units RO are provided in the imaging area PA so as to correspond to the plurality of photoelectric conversion units P, and the signal charges generated by the photoelectric conversion units P are vertically transferred. It is configured to read to the register unit VT.

  As illustrated in FIG. 2, the vertical transfer register unit VT extends in the vertical direction y so as to correspond to the plurality of photoelectric conversion units P arranged in the vertical direction y in the imaging area PA. Further, the vertical transfer register units VT are arranged between the columns of the photoelectric conversion units P arranged in the vertical direction y. A plurality of vertical transfer register units VT are provided in the imaging area PA, and the plurality of vertical transfer register units VT correspond to each of the plurality of photoelectric conversion units P arranged in the horizontal direction x in the horizontal direction x. Are lined up. The vertical transfer register unit VT is a so-called vertical transfer CCD, and sequentially transfers the signal charges read from the photoelectric conversion unit P by the charge reading unit RO in the vertical direction y. Although details will be described later, in the vertical transfer register unit VT, a plurality of transfer electrodes (not shown) are arranged in the vertical direction y, and the transfer electrodes arranged in the vertical direction y are, for example, four-phase. By supplying a drive pulse signal, the signal charge is transferred.

  At the lower end of the imaging area PA, a horizontal transfer register HT is arranged as shown in FIG. The horizontal transfer register unit HT extends in the horizontal direction x, and each of the plurality of vertical transfer register units VT sequentially transfers the signal charges transferred in the vertical direction y in the horizontal direction x. In other words, the horizontal transfer register unit HT is a so-called horizontal transfer CCD, and is driven by, for example, a two-phase drive pulse signal to transfer the signal charge transferred for each horizontal line (one row of pixels). To do.

  As shown in FIG. 2, an output unit OUT is formed at the left end of the horizontal transfer register unit HT. The output unit OUT converts the signal charges horizontally transferred by the horizontal transfer register unit HT into a voltage. And output as an image signal.

  The imaging area PA corresponds to the imaging surface PS shown in FIG.

(3) Detailed Configuration of Solid-State Imaging Device A detailed configuration of the solid-state imaging device 1 will be described.

  FIG. 3 is a diagram illustrating a main part of the solid-state imaging device 1 according to the first embodiment of the present invention. Here, FIG. 3 shows a cross section of the main part, and shows an X1-X2 portion of FIG. 2 in an enlarged manner.

  As shown in FIG. 3, the solid-state imaging device 1 includes a substrate 101. The substrate 101 is, for example, an n-type silicon semiconductor substrate. Inside the substrate 101, a photodiode 21, a charge readout channel region 22, a charge transfer channel region 23, and a channel stopper region 24 are provided. ing.

  On the surface of the substrate 101, as shown in FIG. 3, a transfer electrode 31, a metal light shielding film 41, an intralayer lens 45, a color filter 51, and a microlens 61 are provided.

  Each part which comprises the solid-state imaging device 1 is demonstrated sequentially.

  As shown in FIG. 3, the photodiode 21 is provided on the substrate 101 so as to correspond to the photoelectric conversion unit P. The photodiode 21 is configured to receive light at the light receiving surface JS and generate signal charges by performing photoelectric conversion.

Specifically, the photodiode 21 is provided in a portion located on the front surface side inside the substrate 101. Although not shown, the photodiode 21 includes, for example, an n-type semiconductor region (n) (not shown) and a p-type on a p-type semiconductor well region (p) (not shown) formed in the substrate 101. A semiconductor region (p ⁺ ) (not shown) is sequentially formed.

Here, the n-type semiconductor region (n) functions as a signal charge storage region. The p-type semiconductor region (p ⁺ ) functions as a hole accumulation region, and is configured to suppress dark current from occurring in the n-type semiconductor region (n) that is the signal charge accumulation region.

  In the photodiode 21, the inner lens 45, the color filter 51, the microlens 61, and the like are provided above the light receiving surface JS with a material that transmits light. For this reason, the photodiode 21 receives the light H incident through each of these portions in turn at the light receiving surface JS, and generates a signal charge.

  As shown in FIG. 3, the charge readout channel region 22 is provided so as to correspond to the charge readout unit RO, and is configured to read out the signal charges generated by the photodiode 21.

  Specifically, as shown in FIG. 3, the charge readout channel region 22 is provided so as to be adjacent to the photodiode 21 in a portion located on the inner surface side of the substrate 101.

  Here, the charge readout channel region 22 is disposed on the left side of the photodiode 21 in the horizontal direction x. For example, the charge readout channel region 22 is configured as a p-type semiconductor region.

  As shown in FIG. 3, the charge transfer channel region 23 is provided so as to correspond to the vertical transfer register unit VT, and the signal charge read from the photodiode 21 by the charge reading unit RO is converted into the charge transfer channel region. 23 is configured to transfer.

  Specifically, as shown in FIG. 3, the charge transfer channel region 23 is provided adjacent to the charge readout channel region 22 in a portion located on the inner surface side of the substrate 101.

  Here, the charge transfer channel region 23 is arranged on the left side of the charge readout channel region 22 in the horizontal direction x. For example, the charge transfer channel region 23 is configured by providing an n-type semiconductor region (n) (not shown) on a p-type semiconductor well region (p) (not shown) inside the substrate 101.

  As shown in FIG. 3, the channel stopper region 24 is provided so as to correspond to the element isolation portion SS.

  Specifically, the channel stopper region 24 is provided in a portion located on the surface side inside the substrate 101 as shown in FIG.

  Here, in the horizontal direction x, the channel stopper region 24 is on the left side of the charge readout channel region 22 in the horizontal direction x, and the photodiodes 21 arranged in the column adjacent to the charge readout channel region 22. Between the two. In addition, a channel stopper region 24 is provided so as to correspond to the element isolation portion SS between the two photodiodes 21 arranged in the vertical direction y (see FIG. 2).

  The channel stopper region 24 is configured, for example, by providing a p-type semiconductor region (p +) (not shown) on a p-type semiconductor well region (p) (not shown) inside the substrate 101. A barrier is formed to prevent signal charges from flowing in and out.

  As shown in FIG. 3, the transfer electrode 31 is provided on the surface of the substrate 101 so as to face through the gate insulating film Gx. The transfer electrode 31 is made of a conductive material. For example, the transfer electrode 31 is formed using a conductive material such as polysilicon, and is provided on the gate insulating film Gx formed of, for example, a silicon oxide film.

  As shown in FIG. 3, the metal light-shielding film 41 is formed above the charge readout channel region 22 and the charge transfer channel region 23 on the surface of the substrate 101, and the charge readout channel region 22 and the charge transfer channel region 23. The light incident on is shielded. Further, as shown in FIG. 3, the metal light-shielding film 41 is provided so as to cover the transfer electrode 31 via the insulating film Sz.

  Here, the metal light shielding film 41 is formed above the substrate 101 in a region other than the region corresponding to the light receiving surface JS. Each of the metal light shielding films 41 is made of a light shielding material that shields light. For example, the metal light shielding film 41 is formed using a metal material such as tungsten or aluminum.

  As shown in FIG. 3, the inner lens 45 is provided above the surface of the substrate 101 so as to correspond to the light receiving surface JS. A plurality of intra-layer lenses 45 are arranged in the same shape so as to correspond to the plurality of photoelectric conversion units P arranged in the imaging area PA.

  Here, the inner lens 45 is a convex lens whose center is formed thicker than the edge in the direction from the light receiving surface JS toward the color filter 51, and collects incident light H at the center of the light receiving surface JS. It is configured to shine. For example, the in-layer lens 45 is formed so that the planar shape is rectangular.

  As shown in FIG. 3, the color filter 51 is provided above the surface of the substrate 101 so as to face the light receiving surface JS via the inner lens 45. The color filter 51 is provided on the upper surface of the planarization film HT1 that planarizes the surface of the inner lens 45. A plurality of the color filters 51 are arranged so as to correspond to the plurality of photoelectric conversion units P arranged in the imaging area PA.

  Here, the color filter 51 is configured to color the incident light H and transmit it to the light receiving surface JS.

  FIG. 4 is a diagram showing the color filter 51 in the first embodiment according to the present invention. Here, FIG. 4 shows a plan view.

  4, the color filter 51 includes a blue filter layer 51B in addition to the green filter layer 51G and the red filter layer 51R illustrated in FIG. 3, and each corresponds to each photoelectric conversion unit P. Is provided.

  Specifically, as shown in FIG. 4, each of the green filter layer 51G, the red filter layer 51R, and the blue filter layer 51B constituting the color filter 51 is arranged, for example, in a Bayer array.

  In the color filter 51, the green filter layer 51G colors the incident light H in green. That is, the green filter layer 51G is configured to color green light having a shorter wavelength than the red light colored by the red filter layer 51R. Specifically, the green filter layer 51G is formed using a green coloring pigment and a photoresist resin, and is configured to have a high light transmittance in a green wavelength band (for example, a wavelength of 500 to 565 nm). Has been.

  In the color filter 51, the red filter layer 51R colors the incident light H in red. That is, the red filter layer 51R is configured to color red light having a longer wavelength than the green light colored by the green filter layer 51G. Specifically, the red filter layer 51R is formed using a red coloring pigment and a photoresist resin, and is configured to have a high light transmittance in a red wavelength band (for example, a wavelength of 625 to 740 nm). Has been.

  In the color filter 51, the blue filter layer 51B colors the incident light H in blue. That is, the blue filter layer 51B is configured to color blue light having a shorter wavelength than the red light colored by the red filter layer 51R and the green light colored by the green filter layer 51G. Specifically, the blue filter layer 51B is formed using a blue coloring pigment and a photoresist resin, and is configured to have a high light transmittance in a blue (for example, wavelength 450 to 485 nm) wavelength band. Has been.

  Each of the layers 51R, 51G, and 51B uses, for example, a coating liquid containing a dye corresponding to each color, a dispersion resin, a photopolymerization initiator, a polyfunctional photopolymerizable compound, a solvent, and other additives. After coating and drying, the pattern is formed by lithography.

  In the present embodiment, the red filter layer 51R contains more black pigment than the other green filter layers 51G and blue filter layers 51B, and the amount of light dropped onto the light receiving surface JS is adjusted. Specifically, the red filter layer 51R contains a black pigment, and the other green filter layers 51G and the blue filter layer 51B are formed so as not to contain a black pigment.

  In the above, as the black pigment, for example, the following black pigment (carbon black) can be used. The black pigment is preferably contained so that the total solid content is 1 to 10% by mass.

Cancarb:
Carbon Black Thermax N990, N991, N907, N908, N990, N991, N90b8, etc.

Asahi Carbon Co., Ltd .:
Carbon Black Asahi # 80, Asahi # 70, Asahi # 70L, Asahi F-200, Asahi # 66, Asahi # 66HN, Asahi # 60H, Asahi # 60U, Asahi # 60, Asahi # 55, Asahi # 50H, Asahi # 51 , Asahi # 50U, Asahi # 50, Asahi # 35, Asahi # 15, Asahi Thermal

Made by Degussa:
ColorBlack Fw200, ColorBlack Fw2, ColorBlack Fw2V, ColorBlack Fw1, ColorBlack Fw18, ColorBlack S170, ColorBlack S160, SpecialBlack6, SpecialBlack5, SpecialBlack4, SpecialBlack4A, PrintexU, PrintexV, Printex140U, Printex140V, etc.

Made by Mitsubishi Chemical Corporation:
Carbon Black # 2700B, # 2650, # 2600, # 2450B, # 2400, # 2350, # 2300, # 2200, # 1000, # 990, # 980, # 970, # 960, # 950, # 900, # 850, # 750B, # 650B, MCF88, # 650, MA600, MA7, MA8, MA11, MA100, MA220, IL30B, IL31B, IL7B, IL11B, IL52B, # 4000, # 4010, # 55, # 52, # 50, # 47 , # 45, # 44, # 40, # 33, # 32, # 30, # 20, # 10, # 5, CF9, # 3050, # 3150, # 3250, # 3750, # 3950, Diamond Black A, Diamond Black N220M, Diamond Black N234, Diamond Black I, Diamond Black LI, Da Diamond Black II, Diamond Black N339, Diamond Black SH, Diamond Black SHA, Diamond Black LH, Diamond Black H, Diamond Black HA, Diamond Black SF, Diamond Black N550M, Diamond Black E, Diamond Black G, Diamond Black R, Diamond Black N760M, Diamond Black LP, etc.

  Moreover, as a pigment | dye used for 51R of red filter layers, an anthraquinone pigment, a perylene pigment, a diketopyrrolo-pillar pigment can be used, for example. Specifically, examples of the anthraquinone pigment include C.I. I. Pigment Red 177 can be used. Examples of perylene pigments include C.I. I. Pigment red 155, C.I. I. Pigment Red 224 can be used. Examples of the diketopyrrolopyrrole pigment include C.I. I. Pigment Red 254 can be used. Also, a mixture of these with a disazo yellow pigment, an isoindoline yellow pigment, a quinophthalone yellow pigment, or a perylene red pigment can be used. It is preferable that 30% by mass or more of this pigment is contained in the total solid content.

  In addition, as the dispersion resin, for example, a resin obtained by reacting a carboxyl group-containing resin with an unsaturated compound containing a glycidyl group can be used. In addition, a resin obtained by polymerizing a (meth) acrylic acid ester-based compound containing a hydroxyl group, a resin such as (meth) acrylic acid-2-isocyanatoethyl, or the like can be used. The dispersion resin is preferably used in an amount of 20 parts by mass or more at the time of dispersion when the above pigment is 100 parts by mass.

  As the photopolymerization initiator, for example, a triazine compound, an alkylamino compound, an oxime compound, or a biimidazole compound can be used. The photopolymerization initiator is preferably contained so that the total solid content is 5 to 25% by mass.

  As the polyfunctional photopolymerizable compound, for example, a polyfunctional photopolymerizable compound having an acidic functional group and / or an alkyleneoxy chain can be used. The polyfunctional photopolymerizable compound is preferably contained so as to be 2 to 15% by mass in the total solid content.

  Moreover, as a solvent, the following can be used individually or in mixture, for example. This solvent is preferably contained so as to be 25 to 95% by mass as a whole.

Methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, ethyl cellosolve acetate, ethyl lactate, diethylene glycol dimethyl ether, butyl acetate, methyl 3-methoxypropionate, 2-heptanone, cyclohexanone, ethyl carbitol acetate, butyl carbitol Acetate, propylene glycol methyl ether, propylene glycol monomethyl ether acetate

  Further, as other additives, a sensitizer may be added to improve radical generation efficiency by the photopolymerization initiator. Further, a silicone-based or fluorine-based surfactant may be added to improve the coating characteristics.

  As shown in FIG. 3, the microlens 61 is provided above the surface of the substrate 101 and above the color filter 51 via the planarizing film HT2. A plurality of microlenses 61 are arranged in the same shape so as to correspond to the plurality of photoelectric conversion units P arranged in the imaging area PA.

  Here, the micro lens 61 is a convex lens whose center is formed thicker than the edge in the direction from the light receiving surface JS toward the color filter 51, and condenses incident light H on the center of the light receiving surface JS. Then, it is configured to transmit.

  For example, the microlens 61 is formed so that the planar shape is rectangular. In the present embodiment, the microlens 61 transmits the incident light H transmitted through the infrared cut filter 202 (see FIG. 1) configured by the above-described reflective inorganic interference multilayer film to the center of the light receiving surface JS. It is configured to collect and transmit light.

[Production method]
Below, the manufacturing method which manufactures said solid-state imaging device 1 is demonstrated.

  5-9 is a figure which shows the principal part provided in each process of the manufacturing method of the solid-state imaging device 1 in Embodiment 1 concerning this invention. Here, FIGS. 5 to 9 show enlarged portions corresponding to the X1-X2 portion of FIG. 2 in the same manner as FIG.

(1) Formation of the inner lens 45 First, as shown in FIG. 5, the inner lens 45 is formed.

  Prior to the formation of the intralayer lens 45, as shown in FIG. 5, the photodiode 21, the charge readout channel region 22, the charge transfer channel region 23, and the channel stopper region 24 are provided on the substrate 101. For example, each part is formed by introducing an impurity into the substrate 101 using an ion implantation method. Thereafter, a gate insulating film Gx is formed by providing a silicon oxide film on the entire surface of the substrate 101 by, eg, thermal oxidation.

  Then, as shown in FIG. 5, each part such as the transfer electrode 31 is formed on the surface of the substrate 101. For example, after forming a polysilicon film (not shown) by the CVD method, the transfer electrode 31 is formed by patterning the polysilicon film by a photolithography technique. Then, the insulating film Sz is formed of, for example, a PSG film so as to cover the transfer electrode 31. Then, for example, after forming a tungsten film by a sputtering method, the metal light shielding film 41 is formed by patterning the tungsten film by a photolithography technique.

  Thereafter, as shown in FIG. 5, an in-layer lens 45 is provided on the surface of the substrate 101 so as to cover the above-described portions.

  Here, as shown in FIG. 5, the inner lens 45 is formed as a convex lens whose center is thicker than the edge in the direction from the light receiving surface JS toward the color filter 51.

  For example, after forming a plasma silicon nitride film (refractive index of 1.9 to 2.0) by a CVD (Chemical Vapor Deposition) method, the plasma silicon nitride film is processed to form the in-layer lens 45.

(2) Formation of planarization film HT1 Next, as shown in FIG. 6, the planarization film HT1 is formed.

  Here, the flattening film HT1 is provided so as to flatten the unevenness of the surface formed by the intralayer lens 45.

  Specifically, after the thermosetting resin is formed on the upper surface of the in-layer lens 45 by the spin coat method, the planarization film HT1 is formed by performing a thermosetting process.

  For example, a thermosetting acrylic resin (refractive index of about 1.5 to 1.55) having a refractive index lower than that of the material of the in-layer lens 45 is used. Other than this, a material containing fluorine in an acrylic resin, a material containing fluorine in a siloxane resin, a material containing fluorine in an acrylic resin and finely dispersed hollow silica as an additive, and siloxane A material in which fluorine is contained in a resin and hollow silica is finely dispersed as an additive is preferably used. By including fluorine in the siloxane resin or dispersing and containing hollow silica in the resin, the refractive index of the material decreases (about 1.3 to 1.45), and a stronger intralayer lens structure is obtained. It is done.

(3) Formation of Green Filter Layer 51G Next, as shown in FIG. 7, a green filter layer 51G constituting the color filter 51 is formed.

  Here, as shown in FIG. 7, the green filter layer 51G is provided on the surface of the planarizing film HT1.

  Specifically, a coating liquid containing a dye for obtaining green spectral characteristics and a photosensitive resin is applied by a spin coating method to form a photoresist film (not shown).

  Then, after performing a prebaking process, the green filter layer 51G is formed by pattern-processing about the photoresist film.

  For example, a pattern exposure process for transferring a pattern image is performed on the photoresist film using an i-line reduction exposure machine. Thereafter, a development process is performed on the photoresist film that has been subjected to the pattern exposure process using an organic alkali aqueous solution (such as tetramethylammonium hydroxide to which a nonionic surfactant is added) as a developer. Then, a post-baking process is performed to form a green filter layer 51G.

(4) Formation of Red Filter Layer 51R Next, as shown in FIG. 8, a red filter layer 51R constituting the color filter 51 is formed.

  Here, as shown in FIG. 8, a red filter layer 51R is provided on the surface of the planarizing film HT1.

  Specifically, a coating liquid containing a red pigment and a photosensitive resin is applied by a spin coating method to form a photoresist film (not shown).

  In the present embodiment, as described above, in addition to the red pigment, a black pigment is further contained in the coating solution to form this photoresist film (not shown).

  Then, after performing a prebaking process, the red filter layer 51R is formed by pattern-processing about the photoresist film.

  For example, a pattern exposure process for transferring a pattern image is performed on the photoresist film using an i-line reduction exposure machine. Thereafter, a development process is performed on the photoresist film that has been subjected to the pattern exposure process using an organic alkali aqueous solution (such as tetramethylammonium hydroxide to which a nonionic surfactant is added) as a developer. Then, a post-baking process is performed to form the red filter layer 51R.

  Thereafter, although not shown, the blue filter layer 51B is provided on the surface of the planarizing film HT1, and the color filter 51 composed of the three primary colors is completed.

(5) Formation of Flattening Film HT2 Next, as shown in FIG. 9, the flattening film HT2 is formed on the color filter 51.

  Here, the planarizing film HT2 is provided so as to cover and planarize the upper surface of the color filter 51.

  Specifically, after the thermosetting resin is formed on the upper surface of the color filter 51 by the spin coating method, the planarization film HT2 is formed by performing a thermosetting process.

(6) Formation of Micro Lens 61 Next, as shown in FIG. 3, the micro lens 61 is formed on the upper surface of the planarizing film HT2.

  Here, as shown in FIG. 3, in the direction from the light receiving surface JS toward the color filter 51, the micro lens 61 is provided as a convex lens whose center is formed thicker than the edge.

  For example, the microlens 61 is formed by forming a positive photoresist film (not shown) on the upper surface of the planarizing film HT2 and then processing the film.

  Specifically, a positive photoresist film is formed by spin coating using polystyrene as the base resin and diazonaphthoquinone as the photosensitizer, and prebaking is performed. Then, using an i-line reduction exposure machine, an exposure process for irradiating the positive photoresist film with the pattern image is performed. Thereafter, development processing is performed on the photoresist film that has been subjected to the exposure processing. In this development processing, for example, an organic alkaline aqueous solution (such as tetramethylammonium hydroxide to which a nonionic surfactant is added) is used as a developer. And in order to decolorize so that the light absorption of the short wavelength area | region in visible light may be lost, an ultraviolet-ray is irradiated to the whole surface. Thereafter, heat treatment is performed on the photoresist film at a temperature equal to or higher than the thermal softening point. Thereby, the microlens 61 is completed.

[Summary]
As described above, in the present embodiment, the color filter 51 that colors the incident light H and transmits it to the light receiving surface is provided above the light receiving surface JS (see FIG. 3). Here, in the color filter 51, the red filter layer 51R is a filter that colors the incident light H to red, which has a longer wavelength than green and blue, and contains a black pigment. On the other hand, the green filter layer 51G and the blue filter layer 51B do not contain a black pigment. For this reason, in the present embodiment, the output of the red component is reduced, and the spectral outputs of the respective colors are equal, so that the color reproducibility is excellent and the image quality of the captured image can be improved.

  This action / effect will be specifically described below.

  FIG. 10 is a diagram showing the spectral transmission characteristics of the red filter layer 51R in the first embodiment of the present invention. In FIG. 10, the horizontal axis represents wavelength (nm), and the vertical axis represents transmittance (%). Here, the spectral characteristics of an interline CCD having a pixel size of 1.55 μm □ are shown. Moreover, in FIG. 10, the continuous line is the case of this embodiment, Comprising: The case where a black pigment | dye is contained is shown. On the other hand, unlike the case of this embodiment, the broken line has shown the case where a black pigment | dye is not included. Specifically, the spectral characteristic indicated by the solid line indicates a case where 5.1 wt% of black pigment (carbon black) is added to the total solid content for obtaining the spectral characteristic indicated by the broken line. Therefore, the film thickness is 0.735 μm in the case of a solid line and 0.7 μm in the case of a broken line.

  FIG. 11 is a diagram showing the spectral output of the solid-state imaging device 1 in the first embodiment according to the present invention. FIG. 11 shows a red component output Vr, a green component spectral output Vg, and a blue component spectral output Vb.

  As shown in FIG. 10, the red filter layer 51 </ b> R contains a black pigment (solid line), and therefore has a lower transmittance than a case where a black pigment is not contained (broken line).

  Specifically, when the black pigment is not contained (broken line), the average transmittance in the red wavelength range is 97.5%. On the other hand, as in this embodiment, the red filter layer 51R (solid line) containing the black pigment has an average transmittance of 80.2% in the red wavelength range.

  For this reason, as shown in FIG. 11, the output Vr of the red component can be reduced. That is, in this embodiment, the color filter contains a black pigment so that the spectral outputs of the respective colors are equal.

  Therefore, in the present embodiment, the above-described white balance can be easily adjusted, and the red color separation can be improved, so that the color reproducibility is excellent.

  Therefore, this embodiment can improve the image quality of a captured image.

  In the present embodiment, an infrared cut filter 202 formed of a reflective inorganic interference multilayer film is provided so as to cut the infrared component of the incident light H and transmit it to the microlens 61 (FIG. 1). reference).

  In this case, as described above, a ghost phenomenon may occur, and the image quality of the captured image may deteriorate.

  12 to 15 are diagrams for explaining the ghost phenomenon. FIG. 12 schematically shows the behavior of the incident light H incident on the portion of the red filter layer 51Rc that does not contain the black pigment in the solid-state imaging device, unlike the present embodiment. 13 and 15 show the spectral characteristics of the light incident on the solid-state imaging device 1. FIG. 14 shows the reflection characteristics of the infrared cut filter 202.

  As shown in FIG. 12, the incident light H first enters the infrared cut filter 202. The infrared cut filter 202 reflects light IR having a long wavelength component, and cuts infrared rays.

  Next, as shown in FIG. 12, the transmitted light Ha transmitted through the infrared cut filter 202 is incident on the photodiode 21 through members such as the microlens 61 and the red filter layer 51Rc. Then, photoelectric conversion is performed in the photodiode 21.

  At this time, there is a component that is reflected without being subjected to photoelectric conversion, and the reflected light Hb returns to members such as the red filter layer 51Rc and the microlens 61 as shown in FIG.

  Next, as shown in FIG. 12, the reflected light Hb returns to the infrared cut filter 202 as diffracted light by the arrangement pitch of the pixels. Here, the reflected light Hb has a spectral characteristic as shown in FIG.

  Next, the reflected light Hb is reflected by the infrared cut filter 202 as shown in FIG. The infrared cut filter 202 has reflection characteristics as shown in FIG. For this reason, the reflected light Hc reflected by the infrared cut filter 202 has spectral characteristics as shown in FIG. 15 and is incident on the members such as the red filter layer 51Rc and the microlens 61 again.

  Then, as shown in FIG. 15, the reflected light Hc containing the red component is incident on the photodiode 21, and photoelectric conversion is performed.

  Although not shown in FIG. 15, most of the green component light is transmitted by the infrared cut filter 202 without being reflected by the infrared cut filter 202 (see FIG. 14). In addition, as shown in FIG. 14, a part of the blue component light (in the range of 400 to 420 nm) is reflected.

  For this reason, the ghost phenomenon resulting from the light of a red component may occur, and the image quality of the captured image may deteriorate.

  However, in the present embodiment, as described above, the red filter layer 51R contains a black pigment. For this reason, generation | occurrence | production of a ghost can be suppressed.

  FIG. 16 is a diagram for explaining that the occurrence of the ghost phenomenon is suppressed in the first embodiment according to the present invention. FIG. 16 shows the spectral characteristics of the reflected light (Hc in FIG. 12) reflected by the infrared cut filter 202, as in FIG. In FIG. 16, the broken line indicates the case of the present embodiment, and the solid line indicates the case where the black pigment is not contained in the red filter layer 51 </ b> R of the present embodiment.

  As shown in FIG. 16, in the present embodiment, since the red filter layer 51R contains a black pigment, the reflected light (Hc in FIG. 12) reflected by the infrared cut filter 202 is reflected by the red filter layer 51R. Absorbed and its light intensity decreases. Specifically, the light intensity can be reduced to about 40% from the integral value of the spectrum.

  Therefore, this embodiment can suppress the occurrence of ghost and can improve the image quality of the captured image.

<2. Second Embodiment>
[Device configuration]
FIG. 17 is a diagram illustrating a main part of the solid-state imaging device 1b according to the second embodiment of the present invention. Here, FIG. 17 shows a cross section of the main part, and shows an X1-X2 portion of FIG. 2 in an enlarged manner.

  As shown in FIG. 17, in the present embodiment, the solid-state imaging device 1b is different from the first embodiment in the red filter layer 51Rb. Further, a black pigment-containing layer 51K is further provided for the first embodiment. Except for this point and points related thereto, the present embodiment is the same as the first embodiment. For this reason, description is abbreviate | omitted about the overlapping part.

  Unlike the case of Embodiment 1, the red filter layer 51Rb does not contain a black pigment. Except for this point, it is formed in the same manner as in the first embodiment.

  As shown in FIG. 17, the black pigment containing layer 51K is provided on the upper surface of the planarizing film HT1. The black pigment-containing layer 51K is provided so as to be interposed between the light receiving surface of the photodiode 21 and the red filter layer 51Rb in the imaging region PA of the substrate 101. The black pigment containing layer 51K contains a black pigment. And the black pigment | dye content layer 51K is provided above the light-receiving surface JS, and is comprised so that incident light H may permeate | transmit to the light-receiving surface JS.

  FIG. 18 is an enlarged view showing the black pigment-containing layer 51K in the second embodiment according to the present invention. Here, FIG. 18 shows the upper surface of the black pigment-containing layer 51K.

  As shown in FIG. 18 (a), the black pigment-containing layer 51K has a square shape in the direction along the surface (xy surface) of the substrate 101, and the sides thereof are the horizontal direction x and the vertical direction y. It is formed so that it may be arranged along.

  In addition, as shown in FIGS. 18B to 18D, the black pigment containing layer 51K may be formed in various planar shapes.

  For example, as shown in FIG. 18B, the black pigment containing layer 51K may be formed so as to have a rectangular shape that is half the square planar shape shown in FIG. Further, as shown in FIG. 18C, in the square planar shape, the black pigment containing layer 51K is formed so that the isosceles triangles are arranged at the four corners and the inside is opened. good. Further, as shown in FIG. 18D, the planar shape is a square, and the sides are arranged along a direction inclined at an angle of 45 ° with respect to each of the horizontal direction x and the vertical direction y. As described above, the black pigment-containing layer 51K may be formed. Further, the shape of the black dye-containing layer 51K may be a shape other than that shown in FIG. 18, and a part of the light beam collected by the microlens only needs to pass through the black dye-containing layer 51K.

[Production method]
Below, the manufacturing method which manufactures said solid-state imaging device 1b is demonstrated.

  19-22 is a figure which shows the principal part provided in each process of the manufacturing method of the solid-state imaging device 1b in Embodiment 2 concerning this invention. Here, FIGS. 19 to 22 show an enlarged cross section of a portion corresponding to the X1-X2 portion of FIG. 2 in the same manner as FIG. 17, and the main parts provided in each step are shown in FIG. To FIG.

(1) Formation of Black Dye-Containing Layer 51K First, as shown in FIG. 19, the black dye-containing layer 51K is formed.

  Prior to the formation of the black dye-containing layer 51K, as shown in the first embodiment, the inner lens 45 and the planarizing film HT1 are formed (see FIGS. 5 and 6).

  Thereafter, as shown in FIG. 19, a black pigment-containing layer 51K is provided on the upper surface of the planarizing film HT1.

  Here, the black pigment containing layer 51K is provided on the planarizing film HT1 so as to correspond to the region where the red filter layer 51R is formed.

  Specifically, a coating liquid containing a black pigment and a photosensitive resin is applied by a spin coating method to form a photoresist film (not shown).

  Then, after performing a prebaking process, the black pigment content layer 51K is formed by carrying out pattern processing about the photoresist film.

  For example, a photoresist film is formed using SK-9000C (manufactured by Fuji Film Electronics Materials Co., Ltd.). For example, this film formation is performed so that the film thickness becomes 0.04 μm. Here, for SK-9000C, propylene glycol monomethyl ether acetate and propylene glycol monomethyl ether were diluted at a ratio of 9: 1 so that the same film thickness was obtained. Then, for example, a pattern exposure process for transferring a pattern image is performed on the photoresist film using an i-line reduction exposure machine. Thereafter, a development process is performed on the photoresist film that has been subjected to the pattern exposure process using an organic alkali aqueous solution (such as tetramethylammonium hydroxide to which a nonionic surfactant is added) as a developer. And a post-baking process is performed and the black pigment | dye content layer 51K is formed.

  The film thickness of the black pigment containing layer 51K is preferably 0.2 μm or less, and more preferably 0.1 μm or less. Further, the film thickness may be optimized by appropriately adjusting the content of the black pigment.

(2) Formation of Green Filter Layer 51G Next, as shown in FIG. 20, a green filter layer 51G constituting the color filter 51 is formed.

  Here, as shown in FIG. 20, a green filter layer 51G is provided on the surface of the planarizing film HT1.

  Specifically, as in the first embodiment, a coating liquid containing a green pigment and a photosensitive resin is applied by a spin coating method to form a photoresist film (not shown). Then, after performing a prebaking process, the green filter layer 51G is formed by pattern-processing about the photoresist film.

(3) Formation of Red Filter Layer 51Rb Next, as shown in FIG. 21, a red filter layer 51Rb constituting the color filter 51 is formed.

  Here, as shown in FIG. 21, the red filter layer 51Rb is provided on the surface of the black pigment-containing layer 51K provided on the planarizing film HT1.

  Specifically, as in the first embodiment, a coating liquid containing a red pigment and a photosensitive resin is applied by a spin coating method to form a photoresist film (not shown). In the present embodiment, this photoresist film (not shown) is formed without containing a black pigment in the coating solution in addition to the red pigment.

  Then, after performing a prebaking process, the red filter layer 51Rb is formed by pattern-processing about the photoresist film.

  Thereafter, although not shown, as in the case of the first embodiment, the blue filter layer 51B is provided on the surface of the planarizing film HT1, and the color filter 51 composed of the three primary colors is completed.

(4) Formation of Flattening Film HT2 Next, as shown in FIG. 22, the flattening film HT2 is formed on the color filter 51.

  Here, the planarizing film HT2 is provided so as to cover and planarize the upper surface of the color filter 51.

  Specifically, after the thermosetting resin is formed on the upper surface of the color filter 51 by the spin coating method, the planarization film HT2 is formed by performing a thermosetting process.

(5) Formation of Micro Lens 61 Next, as shown in FIG. 17, the micro lens 61 is formed on the upper surface of the planarizing film HT2.

  Here, as shown in FIG. 17, as in the case of the first embodiment, a microlens 61 is provided as a convex lens.

[Summary]
As described above, in the present embodiment, the black pigment containing layer 51K including the black pigment is provided. The black pigment containing layer 51K is interposed between the red filter layer 51Rb and the light receiving surface JS above the light receiving surface JS so that the incident light H incident from the red filter layer 51Rb is transmitted to the light receiving surface JS. It is configured.

  FIG. 23 is a diagram showing the spectral characteristics of the black pigment-containing layer 51K in the second embodiment according to the invention. In FIG. 23, the horizontal axis represents wavelength (nm), and the vertical axis represents transmittance (%).

  As shown in FIG. 23, the black pigment-containing layer 51K is formed so that the light transmittance is 75 to 88% in the wavelength range of about 400 to 750 nm including the wavelength region of visible light. The black pigment-containing layer 51K is formed so that the light transmittance increases as the wavelength increases.

  For this reason, in this embodiment, the spectral characteristics when both the red filter layer 51Rb that does not contain a black pigment and the black pigment-containing layer 51K are overlapped with those shown in FIG. Similar spectral characteristics are obtained.

  Therefore, as in the case of the first embodiment, the present embodiment can easily adjust the white balance and can improve the color separation of red, and thus has excellent color reproducibility.

  Moreover, this embodiment can suppress generation | occurrence | production of a ghost.

  Therefore, this embodiment can improve the image quality of a captured image.

<3. Embodiment 3>
[Equipment configuration]
FIG. 24 is a diagram illustrating a main part of the solid-state imaging device 1c according to the third embodiment of the present invention. Figure 24 shows a plan view of the color filter 51.

  As shown in FIG. 24, in the present embodiment, in the solid-state imaging device 1c, the green filter layer 51Gc and the blue filter layer 51Bc constituting the color filter 51 are different from those in the first embodiment. Except for this point and points related thereto, the present embodiment is the same as the first embodiment. For this reason, description is abbreviate | omitted about the overlapping part.

As shown in FIG. 24, the color filter 51 includes the three primary color coloring filters of the red filter layer 51R, the green filter layer 51Gc, and the blue filter layer 51Bc, as in the case of the first embodiment.
Each of the red filter layer 51R, the green filter layer 51Gc, and the blue filter layer 51Bc is arranged, for example, in a Bayer array as shown in FIG.

  The red filter layer 51R constituting the color filter 51 is formed in the same manner as in the first embodiment, and is formed so as to contain a black pigment.

  In addition, each of the green filter layer 51Gc and the blue filter layer 51Bc constituting the color filter 51 is formed so as to contain a black pigment, unlike the case of the first embodiment.

  In the present embodiment, each of the red filter layer 51R, the green filter layer 51Gc, and the blue filter layer 51Bc is formed so as to contain the same amount of black pigment.

  In the above, as a black pigment | dye, the black pigment (carbon black) listed in Embodiment 1 can be used, for example. The black pigment is preferably contained so that the total solid content is 1 to 10% by mass.

[Summary]
As described above, in the color filter 51 of the present embodiment, the black pigment is contained in each of the green filter layer 51Gc and the blue filter layer 51Bc in addition to the red filter layer 51R. For this reason, in addition to the effects of the first embodiment, when the pixel size is relatively large (for example, 2.0 μm □ or more), the ghost phenomenon caused by the light of the green component and the blue component occurs as shown below. Can be suppressed.

  FIG. 25 is a diagram for explaining a state in which the occurrence of a ghost phenomenon due to green component light is suppressed in the third embodiment according to the present invention.

  As shown in FIG. 25, the incident light H first enters the infrared cut filter 202. The infrared cut filter 202 reflects light IR having a long wavelength component, and cuts infrared rays.

  Next, as shown in FIG. 25, the transmitted light Ha transmitted through the infrared cut filter 202 is incident on the photodiode 21 through members such as the microlens 61 and the green filter layer 51Gc. Then, photoelectric conversion is performed in the photodiode 21.

  At this time, there is a component that is reflected without being subjected to photoelectric conversion, and the reflected light Hb returns to the members such as the green filter layer 51Gc and the microlens 61 as shown in FIG.

  Next, as shown in FIG. 25, the reflected light Hb travels in various directions and returns to the infrared cut filter 202.

  Next, the reflected light Hb passes through the infrared cut filter 202 as shown in FIG. That is, since the infrared cut filter 202 has the reflection characteristics shown in FIG. 14, much of the reflected light Hb is transmitted without being reflected by the infrared cut filter 202 and enters the optical system 201.

  Next, the reflected light Hb is reflected by the surface of the optical system 201 as shown in FIG. Then, the reflected light Hc reflected by p of the optical system 201 enters the members such as the green filter layer 51Gc and the microlens 61 again.

  Then, as shown in FIG. 25, the reflected light Hc containing the green component is incident on the photodiode 21, and photoelectric conversion is performed.

  Although not shown, like the reflected light Hc containing the green component, a part of the blue component light is also reflected by the optical system 201, and the reflected light is incident on the photodiode 21 for photoelectric conversion. May be performed.

  For this reason, a ghost phenomenon occurs due to the light of the green component and the blue component, and the image quality of the captured image may deteriorate.

  However, in the present embodiment, as described above, as in the case of the red filter layer 51R of the first embodiment, each of the green filter layer 51Gc and the blue filter layer 51Bc contains a black pigment. For this reason, in the present embodiment, the amount of reflected light (Hc in FIG. 25) reflected by the optical system 201 is reduced by each of the green filter layer 51Gc and the blue filter layer 51Bc.

  Therefore, this embodiment can suppress the occurrence of a ghost phenomenon due to the light of the green component and the blue component, and can improve the image quality of the captured image.

  In addition, in this embodiment, since each of the green filter layer 51Gc and the blue filter layer 51Bc contains a black pigment, a wavelength region to be suppressed (485 nm or more for blue, and green for green). , 400-500 nm, 565 nm or more) can be reduced. Therefore, since color separation properties and the like can be improved, the image quality of the captured image can be improved.

  In the present embodiment, the case where the same black pigment is contained in the same ratio with respect to each of the red filter layer 51R, the green filter layer 51Gc, and the blue filter layer 51Bc is shown, but the present invention is not limited to this. Between the red filter layer 51R, the green filter layer 51Gc, and the blue filter layer 51Bc, black pigments may be contained in different proportions. For example, when the output of the red component is larger than the output of other color components, or when the occurrence of ghost due to red is significant, the red filter layer 51R is blacker than the green filter layer 51Gc and the blue filter layer 51Bc. It is preferable to increase the content ratio of the pigment.

  Even when the black pigment-containing layer 51K shown in the second embodiment is provided so as to correspond to each of the red filter layer, the green filter layer, and the blue filter layer, the same effect as that of the present embodiment is achieved.・ Effects can be obtained.

<4. Other>
In carrying out the present invention, the present invention is not limited to the above-described embodiment, and various modifications can be employed.

  For example, in the above-described embodiment, the case where the microlens 61 is formed on the planarizing film HT2 has been described. However, the present invention is not limited to this. For example, in addition to the above, the microlens 61 may be formed without providing the planarizing film HT2 on the color filter 51. In this case, the microlens material film is directly applied flat on the surface of the color filter 51. Then, on the microlens material film, a photoresist film is provided by patterning into a rectangular shape. Thereafter, the photoresist film is heat-treated at a temperature equal to or higher than the thermal softening point to obtain a lens shape. The microlens 61 may be formed by performing a dry etching process on the underlying microlens material film using the lens-shaped photoresist mask.

  For example, in the above-described embodiment, the case where the present invention is applied to a CCD image sensor has been described, but the present invention is not limited to this. For example, the present invention can be applied to various image sensors such as a CMOS image sensor.

  Further, the structure of the in-layer lens 45 is not limited to the structure shown in the above embodiment. In addition to the upward convex lens, various lens shapes such as a concave lens may be used.

  In the above embodiment, the black pigment containing layer 51K is provided between the light receiving surface JS and the color filter 51 such as the red filter layer 51Rb. However, the present invention is not limited to this. A black pigment-containing layer 51K may be provided above the color filter 51. In this case, for example, the microlens may be configured to function as a black dye-containing layer by containing a black dye in the microlens.

  Further, a black pigment-containing layer may be provided so as to cover the surface of the microlens. In this case, for example, a black pigment-containing layer in which a black pigment is contained in a resin material (for example, fluorine-containing resin) having a refractive index lower than that of the microlens is provided so that the surface of the microlens 61 becomes flat. May be.

  In addition, a layer containing titanium black or graphite black may be provided as a black pigment containing layer. In the case of graphite black, a pattern can be formed by, for example, a known lift-off method.

  In the above embodiment, the case where the present invention is applied to a camera has been described. However, the present invention is not limited to this. The present invention may be applied to other electronic devices including a solid-state imaging device such as a scanner or a copy machine.

  In the above embodiment, the solid-state imaging devices 1, 1b, and 1c correspond to the solid-state imaging device of the present invention. In the above embodiment, the inner lens 45 corresponds to the inner lens of the present invention. In the above embodiment, the color filter 51 corresponds to the color filter of the present invention. In the above embodiment, the blue filter layers 51B and 51Bc correspond to the third colored layer of the present invention. In the above embodiment, the green filter layers 51G and 51Gc correspond to the second colored layer of the present invention. In the above embodiment, the red filter layers 51R and 51Rb correspond to the first colored layer of the present invention. In the above embodiment, the black pigment-containing layer 51K corresponds to the black pigment-containing layer of the present invention. In the above embodiment, the microlens 61 corresponds to the microlens of the present invention. In the above embodiment, the substrate 101 corresponds to the substrate of the present invention. In the above embodiment, the camera 200 corresponds to the electronic apparatus of the present invention. Moreover, in said embodiment, the infrared cut filter infrared 202 corresponds to the cut filter of this invention. In the above embodiment, the light receiving surface JS corresponds to the light receiving surface of the present invention. Moreover, in said embodiment, the photoelectric conversion part P is corresponded to the photoelectric conversion part of this invention. In the above embodiment, the imaging area PA corresponds to the imaging area of the present invention.

1, 1b, 1c: solid-state imaging device, 21: photodiode, 22: charge readout channel region, 23: charge transfer channel region, 24: channel stopper region, 31: transfer electrode, 41: metal light shielding film, 45: in layer Lens, 51: Color filter, 51B, 51Bc: Blue filter layer, 51G, 51Gc: Green filter layer, 51K: Black pigment-containing layer, 51R, 51Rb: Red filter layer, 61: Micro lens, 101: Substrate, 200: Camera , 201: optical system, 202: infrared cut filter, 203: drive circuit, 204: signal processing circuit, HT1: flattening film, HT2: flattening film, JS: light receiving surface, P: photoelectric conversion unit, PA: imaging region , RO: charge reading unit, SS: element isolation unit, Sz: insulating film, VT: vertical transfer register unit

Claims (19)

A plurality of photoelectric conversion units that generate signal charges by receiving incident light incident on a light receiving surface in an imaging region of a substrate through an infrared cut filter formed of a reflective inorganic interference multilayer film;
A color filter provided above the light receiving surface in the imaging region of the substrate;
Have
The color filter is
A filter region that colors the incident light in a green, red, or blue color and transmits the incident light to the side of the light receiving surface is arranged in a Bayer array,
In the filter area of red, containing a black pigment,
Solid-state imaging device. The solid-state imaging device according to claim 1, wherein the two filter regions of green and blue do not contain the black pigment. The solid-state imaging device according to claim 1, wherein the two filter regions of green and blue contain the black pigment at a ratio smaller than that of the red filter region. The red filter area is
A red colored layer not containing the black pigment;
A black pigment-containing layer containing the black pigment;
Have
The two filter regions of green and blue are composed of a green or blue colored layer not containing the black pigment,
The solid-state imaging device according to claim 2. Provided above the color filter in the imaging region of the substrate, and having a microlens for condensing the incident light on the light receiving surface side,
A plurality of the micro lenses are arranged so as to correspond to the plurality of photoelectric conversion units in the imaging region.
The solid-state imaging device according to any one of claims 1 to 4. In the imaging region of the substrate, provided between the light receiving surface of the photoelectric conversion unit and the microlens, and having an in-layer lens that collects the incident light on the light receiving surface side,
A plurality of the inner lenses are arranged so as to correspond to the plurality of photoelectric conversion units in the imaging region,
The solid-state imaging device according to any one of claims 1 to 4. A plurality of photoelectric conversion units that are provided in an imaging region of the substrate, receive incident light at a light receiving surface, and generate a signal charge;
A color filter provided above the light receiving surface in the imaging region of the substrate;
A microlens that is provided above the color filter in the imaging region of the substrate and collects the incident light on the light receiving surface side;
An in-layer lens that is provided so as to be interposed between the light receiving surface of the photoelectric conversion unit and the microlens in the imaging region of the substrate, and that collects the incident light on the light receiving surface side;
Have
A plurality of the microlenses and the in-layer lenses are arranged so as to correspond to the plurality of photoelectric conversion units in the imaging region,
The color filter is
A first colored layer for coloring the incident light in a first color;
At least a second colored layer that colors the incident light into a second color that is different from the first color and has a shorter wavelength than the first color;
Each of the first colored layer and the second colored layer is arranged to correspond to the plurality of photoelectric conversion units in the imaging region,
The first colored layer is formed so as to contain more black pigment than the second colored layer.
Solid-state imaging device. The color filter is
A third colored layer that colors the incident light into a third color different from the first color and the second color and having a shorter wavelength than the first color and the second color; In addition,
Each of the first colored layer, the second colored layer, and the third colored layer is disposed so as to correspond to the plurality of photoelectric conversion units in the imaging region,
The first colored layer is formed so as to contain more black pigment than the second colored layer and the third colored layer.
The solid-state imaging device according to claim 7. The first colored layer is formed so that the incident light is colored red light and transmitted,
The second colored layer is formed so that the incident light is colored green light and transmitted.
The third colored layer is formed so that the incident light is colored blue light and transmitted.
The solid-state imaging device according to claim 8. Further comprising an infrared cut filter configured to cut an infrared component in the incident light and transmit it to the microlens;
The solid-state imaging device according to any one of claims 7 to 9. An infrared cut filter configured by a reflective inorganic interference multilayer film, which cuts the infrared component of incident light;
Is provided in the imaging region of the substrate, a plurality of photoelectric conversion unit for generating a signal charge incident light through the infrared cut filter by receiving light Te receiving surface,
A color filter provided between the light receiving surface and the infrared cut filter in the imaging region of the substrate;
A microlens that is provided between the color filter and the infrared cut filter in the imaging region of the substrate, and that collects the incident light on the light receiving surface side;
An in-layer lens that is provided so as to be interposed between the light receiving surface of the photoelectric conversion unit and the microlens in the imaging region of the substrate, and that collects the incident light on the light receiving surface side;
Have
A plurality of the microlenses and the in-layer lenses are arranged so as to correspond to the plurality of photoelectric conversion units in the imaging region,
The color filter is
A first colored layer for coloring the incident light in a first color;
A second colored layer that colors the incident light into a second color that is different from the first color and has a shorter wavelength than the first color;
Including at least
Each of the first colored layer and the second colored layer is arranged to correspond to the plurality of photoelectric conversion units in the imaging region,
A black pigment containing layer containing a black pigment is provided between the first colored layer and the light receiving surface in the imaging region of the substrate.
Solid-state imaging device. The color filter is
A third colored layer that colors the incident light into a third color different from the first color and the second color and having a shorter wavelength than the first color and the second color; In addition,
The solid-state imaging device according to claim 11. The first colored layer is formed so that the incident light is colored red light and transmitted,
The second colored layer is formed so that the incident light is colored green light and transmitted.
The third colored layer is formed so that the incident light is colored blue light and transmitted.
The solid-state imaging device according to claim 12. A solid-state imaging device;
An infrared cut filter that is disposed on the light incident side of the solid-state imaging device and is configured by a reflective inorganic interference multilayer film;
Comprising
The solid-state imaging device
A plurality of photoelectric conversion units that are provided in an imaging region of the substrate, receive incident light at a light receiving surface, and generate a signal charge;
A color filter provided above the light receiving surface in the imaging region of the substrate;
Have
The color filter is
A filter region that colors the incident light in a green, red, or blue color and transmits the incident light to the side of the light receiving surface is arranged in a Bayer array,
Contains black pigment in the red filter area,
Electronics. Comprising a solid-state imaging device,
The solid-state imaging device
A plurality of photoelectric conversion units that are provided in an imaging region of the substrate, receive incident light at a light receiving surface, and generate a signal charge;
A color filter provided above the light receiving surface in the imaging region of the substrate;
A microlens that is provided above the color filter in the imaging region of the substrate and collects the incident light on the light receiving surface side;
An in-layer lens that is provided so as to be interposed between the light receiving surface of the photoelectric conversion unit and the microlens in the imaging region of the substrate, and that collects the incident light on the light receiving surface side;
Have
A plurality of the microlenses and the in-layer lenses are arranged so as to correspond to the plurality of photoelectric conversion units in the imaging region,
The color filter is
A first colored layer for coloring the incident light in a first color;
At least a second colored layer that colors the incident light into a second color that is different from the first color and has a shorter wavelength than the first color;
Each of the first colored layer and the second colored layer is arranged to correspond to the plurality of photoelectric conversion units in the imaging region,
The first colored layer is formed so as to contain more black pigment than the second colored layer.
Electronics. A solid-state imaging device ;
An infrared cut filter configured by a reflective inorganic interference multilayer film, which cuts an infrared component of incident light incident on the solid-state imaging device;
Comprising
The solid-state imaging device
A plurality of photoelectric conversion units that are provided in an imaging region of the substrate, receive incident light at a light receiving surface, and generate a signal charge;
A color filter provided above the light receiving surface in the imaging region of the substrate;
A microlens that is provided above the color filter in the imaging region of the substrate and collects the incident light on the light receiving surface side;
An in-layer lens that is provided so as to be interposed between the light receiving surface of the photoelectric conversion unit and the microlens in the imaging region of the substrate, and that collects the incident light on the light receiving surface side;
Have
A plurality of the microlenses and the in-layer lenses are arranged so as to correspond to the plurality of photoelectric conversion units in the imaging region,
The color filter is
A first colored layer for coloring the incident light in a first color;
A second colored layer that colors the incident light into a second color that is different from the first color and has a shorter wavelength than the first color;
Including at least
Each of the first colored layer and the second colored layer is arranged to correspond to the plurality of photoelectric conversion units in the imaging region,
A black pigment containing layer containing a black pigment is provided between the first colored layer and the light receiving surface in the imaging region of the substrate.
Electronics. A method for manufacturing a solid-state imaging device in which light is incident through an infrared cut filter constituted by a reflective inorganic interference multilayer film,
A photoelectric conversion unit forming step of providing a plurality of photoelectric conversion units that receive incident light at a light receiving surface and generate signal charges in an imaging region of the substrate;
Provided above the light receiving surface in the image pickup region of the substrate is a color filter in which a filter region that colors the incident light in green, red, or blue and transmits the light toward the light receiving surface is arranged in a Bayer array. A color filter forming step;
Have
In the color filter forming step, the color filter is formed so as to contain a black pigment in the red filter region.
Manufacturing method of solid-state imaging device. In the color filter forming step, the color filter is formed so that more black pigment is contained in the red filter region than in the green and blue filter regions.
The manufacturing method of the solid-state imaging device of Claim 17 . The color filter forming step includes
Forming a colored layer that colors and transmits the incident light in a green, red, or blue color; and
A black dye-containing layer forming step of selectively forming a black dye-containing layer containing a black dye between the red colored layer and the light-receiving surface;
including,
The manufacturing method of the solid-state imaging device of Claim 17 .

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