JP5024923B2 - Thin film manufacturing apparatus, thin film manufacturing method, and film thickness control method - Google Patents

Description

  The present invention relates to a thin film manufacturing apparatus, a thin film manufacturing method, and a film thickness control method, and more particularly to a thin film manufacturing apparatus, a thin film manufacturing method, and a film thickness control method capable of growing a thin film having a target film thickness.

  In recent years, vertical cavity surface emitting laser elements have come to be used as light sources for LAN (Local Area Network) and optical interconnection, or as light sources for copiers.

  Surface-emitting laser elements have lower power consumption than conventional edge-emitting semiconductor lasers, and are excellent in cost reduction because they can be inspected in the wafer state without the need for cleavage in the manufacturing process. Have.

  The surface emitting laser element is manufactured by laminating a plurality of semiconductor layers on a semiconductor substrate by epitaxial growth.

  Conventionally, when a plurality of semiconductor layers for a surface emitting laser element are crystal-grown, another sample is crystal-grown on a substrate in advance, and this is once taken out of the apparatus and the reflection spectrum is measured. Then, the optical thickness of the semiconductor layer is measured, the growth rate of the semiconductor layer is obtained in advance, and a plurality of semiconductor layers for the surface emitting laser element are crystal-grown using the obtained growth rate.

  However, in such a method, when the growth rate of each semiconductor layer varies for each crystal growth, the variation becomes the variation of the surface emitting laser element manufactured as it is. In particular, the surface emitting laser element can obtain the characteristics as designed by accurately matching the multilayer mirrors disposed on both sides of the active layer, the resonator structure, and the thickness of each part. It is very important to grow a plurality of semiconductor layers constituting a laser element precisely as designed.

  For these reasons, a system for evaluating the film thickness of a crystal during crystal growth has been proposed (Patent Document 1). Patent Document 1 proposes a method of monitoring film thickness during growth of a semiconductor layer by using two wavelengths of monitor light, monitoring reflected light at that wavelength, and measuring Fabry-Perot vibration depending on the optical film thickness. ing.

Further, an apparatus for monitoring the film thickness almost in real time during the growth of a semiconductor layer by measuring Fabry-Perot vibration at a specific wavelength has been proposed (Patent Document 2).
Japanese Patent No. 3624476 US Patent Application Publication No. 2002 / 0113971A1

  However, when the conventional real-time optical monitor is applied to an MOCVD apparatus for crystal growth by a normal metal organic chemical vapor deposition (MOCVD) method, the film thickness is measured at the timing of opening the valve at the start of growth. Then, while measuring the film thickness with an optical monitor, the growth stop valve is closed when the measured film thickness reaches the target film thickness.

  As a result, there is a problem that a deviation occurs between the timing at which the valve is closed and the timing at which the raw material is completely stopped, and the film thickness of the semiconductor layer in which crystal is actually grown deviates from the target film thickness.

  Normally, the amount of film thickness deviation is small, but the distributed Bragg reflector used in the surface emitting laser element has a laminated structure of thin films of several tens of nanometers. Since there is a large amount of deviation in the entire reflector, there is a problem that the amount of film thickness deviation per layer cannot be ignored.

  Accordingly, the present invention has been made to solve such a problem, and an object thereof is to provide a thin film manufacturing apparatus capable of manufacturing a thin film having a target film thickness.

  Another object of the present invention is to provide a thin film manufacturing method capable of manufacturing a thin film having a target film thickness.

  Furthermore, another object of the present invention is to provide a film thickness control method capable of controlling the film thickness of a thin film to a target film thickness.

According to this invention, the thin film manufacturing apparatus includes a reaction vessel, a supply unit, a detection unit, a control unit, and a stop unit. The reaction vessel grows a thin film. A supply means supplies the raw material for growing a thin film to a reaction container. The detecting means detects the film thickness of the thin film grown in the reaction vessel using Fabry-Perot vibration . The control means generates a stop signal for stopping the supply of the raw material to the reaction vessel when the film thickness detected by the detection means reaches a control target film thickness that is thinner than the target film thickness by an excess film thickness. The stop means stops the supply of the raw material to the reaction vessel in response to a stop signal from the control means. The excess film thickness is the film thickness of the thin film that grows from the first timing when the supply of the raw material to the reaction vessel is stopped to the second timing when the growth of the thin film is actually stopped in the reaction vessel. It is. In addition, a cycle consisting of the supply of the raw material by the supply means, the detection of the film thickness by the detection means, the generation of the stop signal by the control means, and the stop of the supply of the raw material by the stop means is performed a plurality of times. The target film thickness for control used as a reference when generating the stop signal is calculated using the excessive film thickness measured in advance, and the target film for control used as the reference when generating the second and subsequent stop signals is calculated. The thickness is calculated using the corrected excessive film thickness, which is the excessive film thickness corrected using the film thickness detected by the detecting means .

  Preferably, the thin film is a laminated film in which a plurality of layers having different materials and / or compositions are laminated. The detecting means detects the film thickness of one layer by optical measurement every time one of the plurality of layers grows. The control unit corrects the excessive film thickness of one layer each time the film thickness of one layer is detected by the detection unit.

  Preferably, the thin film is a laminated film in which a plurality of layers having different materials and / or compositions are alternately laminated by a target number of layers. The detecting means detects the film thickness of one layer by optical measurement every time one of the plurality of layers grows. The control means calculates the average value of the excess film thickness in each layer of the plurality of layers using the film thickness of each layer detected by the detection means when the laminated film is laminated by a predetermined number of laminations less than the target lamination number, The excess film thickness of each layer is corrected using the calculated average value.

  Preferably, the detection means detects the film thickness of the thin film by measuring a change in the reflectance of the thin film at an arbitrary wavelength.

  Preferably, the supply means supplies the raw material to the reaction vessel by opening a valve. The stop means stops the supply of the raw material to the reaction vessel by closing the valve.

  Preferably, the thin film is formed by alternately stacking a first crystalline semiconductor layer having a first refractive index and a second crystalline semiconductor layer having a second refractive index different from the first refractive index for a target period. It consists of a multilayer film. The control unit is configured to control the first crystal from the first target film thickness in which the first film thickness that is the film thickness of the first crystal semiconductor layer detected by the detection unit is the target film thickness of the first crystal semiconductor layer. A first stop signal is generated when the first target film thickness on control which is thin by the first excessive film thickness which is the excessive film thickness of the semiconductor layer is reached, and the second crystal semiconductor layer detected by the detecting means is detected. Control in which the second film thickness, which is the film thickness, is thinner than the second target film thickness, which is the target film thickness of the second crystal semiconductor layer, by a second excess film thickness, which is the excessive film thickness of the second crystal semiconductor layer. A second stop signal is generated when the second target film thickness is reached, and a third stop signal is generated when the number of periods of the multilayer film reaches the target number of periods. The stop means stops the supply of the first raw material to the reaction vessel in response to the first stop signal from the control means, and transfers to the second raw material reaction vessel in response to the second stop signal from the control means. And the supply of the first and second raw materials to the reaction vessel is stopped in response to a third stop signal from the control means. The supply means supplies the second raw material to the reaction vessel in response to the first stop signal from the control means, and supplies the first raw material to the reaction vessel in response to the second stop signal from the control means.

  Preferably, the control means uses the first and second excess films detected by the detection means when the multilayer film is laminated by a predetermined number of cycles less than the target number of cycles. The first and second corrected excess film thicknesses are calculated by correcting the thicknesses, respectively, and the first and second target film thicknesses for control are calculated using the calculated first and second corrected excess film thicknesses, respectively. When the first film thickness detected by the detection means reaches the calculated first target film thickness when the multilayer film is laminated more than the predetermined number of cycles, a first stop signal is generated. When the second film thickness generated and detected by the detection means reaches the calculated second target film thickness on control, a second stop signal is generated.

  Preferably, when the multilayer film is laminated by a predetermined number of cycles less than the target number of cycles, the detection unit detects an intermediate film thickness that is the thickness of the multilayer film for a predetermined cycle. When the multilayer film is laminated by a predetermined number of cycles, the control unit is configured to provide a first average of the first film thicknesses when the multilayer film is laminated by the predetermined number of cycles based on the intermediate film thickness detected by the detection unit. And the second average value of the second film thickness are calculated, and the first and second excess film thicknesses are corrected using the calculated first and second average values, respectively. 2 is calculated, and the first and second target film thicknesses for control are calculated using the calculated first and second corrected excessive film thicknesses, respectively, and the multilayer film has a predetermined number of cycles. When the first film thickness detected by the detection means reaches a first target film thickness calculated by the detection means when more layers are stacked, a first stop signal is generated, and the first stop signal detected by the detection means is generated. Generates a second stop signal when the film thickness of 2 reaches the calculated second target film thickness on control. That.

  Preferably, the control unit calculates the first and second corrected excess film thicknesses so that the peak wavelength of the reflectance of the multilayer film when the multilayer film is stacked by the target number of cycles becomes the target wavelength.

  Preferably, each of the first and second crystalline semiconductor layers is made of a compound semiconductor.

  Preferably, the multilayer film constitutes a distributed Bragg reflector disposed on both sides of the active layer of the surface emitting laser element.

  Preferably, the thin film includes a first thin film having a thickness equal to or greater than a detection limit of the film thickness by the detection means, and a second thin film having a thickness smaller than the detection limit of the film thickness by the detection means. The detection means irradiates the thin film with light having an arbitrary wavelength and detects reflected light from the thin film of the irradiated light. The control means generates a stop signal when the phase change amount of the reflected light from the detection means reaches the target phase change amount corresponding to the target film thickness of the entire thin film.

  Preferably, the first thin film is disposed on one side of the active layer of the surface emitting laser element and on the opposite side of the first crystal semiconductor layer with the active layer as a center. A second crystalline semiconductor layer. The second thin film includes a plurality of third crystal semiconductor layers each forming a quantum well layer included in the active layer, and a plurality of fourth crystal semiconductor layers each forming a barrier layer included in the active layer, including. The plurality of third crystal semiconductor layers are alternately stacked with the plurality of fourth crystal semiconductor layers. The plurality of third and fourth crystal semiconductor layers are arranged between the first and second crystal semiconductor layers.

  Preferably, each of the first crystal semiconductor layer, the second crystal semiconductor layer, the plurality of third crystal semiconductor layers, and the plurality of fourth crystal semiconductor layers is made of a compound semiconductor.

  Preferably, the reaction vessel has a raw material supply unit. The detection means detects the film thickness of the thin film via an optical port provided at a substantially central portion of the raw material supply unit. The supply means supplies the raw material to the reaction vessel from around the optical port.

Further, the Fabry-Perot according to the present invention, thin film manufacturing method includes a first step raw materials supplied to the reaction vessel for supplying means to grow the thin film, the thickness of the thin film detecting means is grown in the reaction vessel The second step of detecting using vibration, and the supply of the raw material to the reaction vessel is stopped when the detected film thickness reaches the control target film thickness that is thinner than the target film thickness by an excess film thickness. A third step. The excess film thickness is the film thickness of the thin film actually grown in the reaction container after the supply of the raw material to the reaction container is stopped. The third step is a first sub-step in which the calculating means subtracts the excess film thickness from the target film thickness to calculate the target film thickness for control, and the generating means calculates the detected film thickness. A second sub-step for generating a stop signal when the control target film thickness is reached, and a third sub-step for stopping the supply of the raw material to the reaction vessel in response to the stop signal generated by the stop means, And a correction unit that corrects the excess film thickness using the film thickness detected by the detection unit, and generates a corrected excess film thickness that is the corrected excess film thickness. The cycle including the first, second, and third steps is performed a plurality of times, and the calculation means performs control in the first sub-step using the excessive film thickness that is measured in advance. The target film thickness is calculated, and the control target film thickness is calculated using the corrected excess film thickness in the first sub-step after the second time.

  Preferably, the third step includes a first sub-step in which the calculating means subtracts the excess film thickness from the target film thickness to calculate the target film thickness for control, and the generating means calculates the detected film thickness. A second sub-step for generating a stop signal when the controlled target film thickness is reached, and a third sub-step for stopping the supply of the raw material to the reaction vessel in response to the stop signal generated by the stop means; including.

  Preferably, in the first sub-step, the calculating means calculates a control target film thickness using an excessive film thickness actually measured in advance.

  Preferably, in the third step, the correction unit corrects the excess film thickness using the film thickness detected by the detection unit, and generates a corrected excess film thickness that is the corrected excess film thickness. The method further includes a step. Then, in the first sub-step, the calculating means calculates a control target film thickness using the corrected excessive film thickness.

  Preferably, the thin film is a laminated film in which a plurality of layers having different materials and / or compositions are laminated. In the second step, the detecting means detects the film thickness of one layer by optical measurement every time one of the plurality of layers grows. The correction means corrects the excess film thickness of one layer every time the film thickness of one layer is detected by the detection means in the fourth sub-step.

  Preferably, the thin film is a laminated film in which a plurality of layers having different materials and / or compositions are alternately laminated by a target number of layers. In the second step, the detecting means detects the film thickness of one layer by optical measurement every time one of the plurality of layers grows. In the fourth sub-step, the correcting unit is configured to detect an average value of excess film thicknesses in each layer of the plurality of layers when the stacked film is stacked by a predetermined number of layers less than the target number of layers. Calculation is performed using the film thickness, and the excessive film thickness of each layer is corrected using the calculated average value.

  Preferably, in the second step, the detection means measures a change in the reflectance of the thin film at an arbitrary wavelength and detects the film thickness of the thin film.

  Preferably, the supply means supplies the raw material to the reaction vessel by opening a valve in the first step. The stop means stops the supply of the raw material to the reaction vessel by closing the valve in the third step.

  Preferably, the thin film is formed by alternately stacking a first crystalline semiconductor layer having a first refractive index and a second crystalline semiconductor layer having a second refractive index different from the first refractive index for a target period. It consists of a multilayer film. The first step is a first sub-step in which the supply means supplies a first raw material for crystal growth of the first crystal semiconductor layer to the reaction vessel, and the supply means performs crystal growth of the second crystal semiconductor layer. A second sub-step for supplying the second raw material to the reaction vessel and a supply means for supplying the second raw material to the reaction vessel when the supply of the first raw material to the reaction vessel is stopped. 3 sub-steps, and the supply means includes a fourth sub-step for supplying the first raw material to the reaction vessel when the supply of the second raw material to the reaction vessel is stopped. The second step includes a fifth sub-step in which the detection means detects the first film thickness of one first crystalline semiconductor layer at an arbitrary timing during the crystal growth of the multilayer film, and the detection means at an arbitrary timing. And a sixth sub-step for detecting the second film thickness of one second crystal semiconductor layer. In the third step, the calculating means subtracts the first excess film thickness that is the excess film thickness of the first crystal semiconductor layer from the first target film thickness that is the target film thickness of the first crystal semiconductor layer. A seventh sub-step for calculating a first target film thickness for control; and an excess film for the second crystal semiconductor layer from the second target film thickness, which is a target film thickness for the second crystal semiconductor layer by the calculation means An eighth sub-step for calculating the second target film thickness for control by subtracting the second excess film thickness, which is the thickness, and the control means for generating the detected first film thickness; A ninth sub-step for generating a first stop signal when the first target film thickness is reached, and a second target film thickness for control in which the generating means calculates the detected second film thickness. The tenth sub-step for generating the second stop signal when the number reaches, and the generation means generates a third stop signal when the number of periods of the multilayer film reaches the target number of periods. An eleventh substep for generating a stop signal, a twelfth substep for stopping the supply of the first raw material to the reaction vessel in response to the first stop signal generated by the stop means, and the stop means A thirteenth sub-step for stopping the supply of the second raw material to the reaction vessel in response to the second stop signal, and a first and a second in response to the third stop signal generated by the stop means And a fourteenth sub-step for stopping the supply of the raw material to the reaction vessel.

  Preferably, in the seventh sub-step, the correcting unit corrects the first excessive film thickness at an arbitrary timing using the detected first film thickness to generate a first corrected excessive film thickness. And calculating a first target film thickness for control by subtracting the first corrected excess film thickness from the first target film thickness. The eighth sub-step includes a step in which the correction means corrects the second excessive film thickness at an arbitrary timing using the detected second film thickness to generate a second corrected excessive film thickness, And means for subtracting the second corrected excess film thickness from the second target film thickness to calculate a control second target film thickness. In the ninth sub-step, when the first film thickness detected when the multilayer film is stacked more than the predetermined number of cycles reaches the calculated first target film thickness, 1 stop signal is generated. In the tenth sub-step, the generating means reaches the second target film thickness on the calculated control when the second film thickness detected when the multilayer film is laminated more than the predetermined number of cycles. 2 stop signals are generated.

  Preferably, in the step of generating the first corrected excess film thickness, the correcting means sets the first wavelength so that the peak wavelength of the reflectance of the multilayer film when the multilayer film is stacked by the target number of cycles becomes the target wavelength. In the step of generating the corrected excessive film thickness and in the step of generating the second corrected excessive film thickness, the peak wavelength of the reflectance of the multilayer film when the multilayer film is stacked by the target number of cycles is set to the target wavelength. A corrected excess film thickness of 2 is generated.

  Preferably, the thin film is formed by alternately stacking a first crystalline semiconductor layer having a first refractive index and a second crystalline semiconductor layer having a second refractive index different from the first refractive index for a target period. It consists of a multilayer film. The first step is a first sub-step in which the supply means supplies a first raw material for crystal growth of the first crystal semiconductor layer to the reaction vessel, and the supply means performs crystal growth of the second crystal semiconductor layer. A second sub-step for supplying the second raw material to the reaction vessel and a supply means for supplying the second raw material to the reaction vessel when the supply of the first raw material to the reaction vessel is stopped. 3 sub-steps, and the supply means includes a fourth sub-step for supplying the first raw material to the reaction vessel when the supply of the second raw material to the reaction vessel is stopped. In the second step, the detecting means detects an intermediate film thickness of the multilayer film when the multilayer film has grown by a predetermined number of cycles less than the target number of cycles. In the third step, the first average value of the first film thicknesses of the first crystal semiconductor layers when the multilayer film is grown by a predetermined number of cycles based on the intermediate film thickness detected by the computing means. And a fifth sub-step for calculating the second average value of the second film thickness of the second crystal semiconductor layer, and the correction means uses the calculated first average value to calculate the first crystal semiconductor A sixth sub-step for calculating the first corrected excess film thickness by correcting the first excess film thickness, which is the excess film thickness of the layer, and the correction means, using the calculated second average value, A seventh sub-step for calculating the second corrected excess film thickness by correcting the second excess film thickness, which is the excess film thickness of the second crystalline semiconductor layer, and the calculating means from the first target film thickness to the first An eighth sub-step for calculating the first target film thickness for control by subtracting the corrected excess film thickness of A ninth sub-step for calculating a second target film thickness for control by subtracting the corrected excess film thickness, and the generating means detect when the multilayer film is grown more than a predetermined number of cycles by the detecting means A tenth sub-step for generating a first stop signal when the calculated first film thickness reaches the calculated control target first film thickness, and the generation means includes a multilayer film having a predetermined number of cycles. An eleventh sub-step for generating a second stop signal when the second film thickness detected when a large number of crystals are grown reaches the calculated second target film thickness for control; When the cycle number of the multilayer film reaches the target cycle number, the twelfth sub-step for generating the third stop signal and the first raw material to the reaction vessel according to the first stop signal generated by the stop means A thirteenth sub-step for stopping the supply and a second stop for which the stop means is generated; A fourteenth sub-step for stopping the supply of the second raw material to the reaction vessel in response to the signal, and a first and second raw material to the reaction vessel in response to the third stop signal generated by the stop means And a fifteenth sub-step for stopping the supply.

  Preferably, in the sixth sub-step, the correcting unit calculates the first corrected excess film thickness so that the peak wavelength of the reflectance of the multilayer film becomes the target wavelength when the multilayer film is stacked by the target number of cycles. In addition, in the seventh sub-step, the second corrected excess film thickness is calculated so that the peak wavelength of the reflectance of the multilayer film when the multilayer film is laminated by the target number of cycles becomes the target wavelength.

  Preferably, each of the first and second crystalline semiconductor layers is made of a compound semiconductor.

  Preferably, the multilayer film constitutes a distributed Bragg reflector disposed on both sides of the active layer of the surface emitting laser element.

  Preferably, the thin film includes a first thin film having a thickness equal to or greater than a detection limit of the film thickness by the detection means, and a second thin film having a thickness smaller than the detection limit of the film thickness by the detection means. In the second step, the detection means irradiates the thin film with light having an arbitrary wavelength, and detects reflected light from the thin film of the irradiated light. The stop means generates a stop signal when the phase change amount of the reflected light from the detection means becomes the target phase change amount corresponding to the target film thickness of the entire thin film in the third step.

  Preferably, the first thin film is disposed on one side of the active layer of the surface emitting laser element and on the opposite side of the first crystal semiconductor layer with the active layer as a center. A second crystalline semiconductor layer. The second thin film includes a plurality of third crystal semiconductor layers each forming a quantum well layer included in the active layer, and a plurality of fourth crystal semiconductor layers each forming a barrier layer included in the active layer, including. The plurality of third crystal semiconductor layers are alternately stacked with the plurality of fourth crystal semiconductor layers. The plurality of third and fourth crystal semiconductor layers are arranged between the first and second crystal semiconductor layers.

  Preferably, each of the first crystal semiconductor layer, the second crystal semiconductor layer, the plurality of third crystal semiconductor layers, and the plurality of fourth crystal semiconductor layers is made of a compound semiconductor.

  Furthermore, according to this invention, the thin film control method is a thin film control method for controlling the film thickness of the thin film using the thin film manufacturing method according to any one of claims 18 to 35.

According to this invention, a thin film having a target film thickness can be manufactured.

According to the present invention, the thickness of the growing thin film can be controlled to the target thickness.

  Embodiments of the present invention will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals and description thereof will not be repeated.

[Embodiment 1]
1 is a schematic diagram showing the configuration of a thin film manufacturing apparatus according to Embodiment 1 of the present invention. Referring to FIG. 1, a thin film manufacturing apparatus 100 according to Embodiment 1 includes a reaction vessel 10, a susceptor 20, a light source 30, a half mirror 40, a detector 50, a control device 60, and a gas supply source 71. -74, mass flow controllers (MFC) 81-84, and valves 91-94.

  The reaction vessel 10 has a gas supply port 11, an exhaust port 12, and an optical port 13. The reaction vessel 10 is composed of a horizontal reaction furnace. The gas supply port 11 is arranged on one end side (left side on the paper surface) of the reaction vessel 10, the exhaust port 12 is arranged on the other end side (right side on the paper surface) of the reaction vessel 10, and the optical port 13 is Arranged at the top of the reaction vessel 10.

  The susceptor 20 has a cross-sectional shape of a right triangle and is disposed in the reaction vessel 10. More specifically, the susceptor 20 is arranged such that the light emitted from the light source 30 is irradiated to the substrate 90 arranged on the inclined surface 20A of the susceptor 20.

  The light source 30 is provided outside the reaction vessel 10. The half mirror 40 is provided between the light source 30 and the optical port 13. The detector 50 is provided outside the reaction vessel 10. The MFCs 81 to 84 are provided corresponding to the gas supply sources 71 to 74, respectively. The valves 91 to 94 are provided corresponding to the MFCs 81 to 84, respectively.

  The gas supply port 11 supplies the raw material supplied from at least one of the MFCs 81 to 84 into the reaction vessel 10. The exhaust port 12 exhausts the gas in the reaction vessel 10 to the outside of the reaction vessel 10. The optical port 13 transmits light from the light source 30 to the substrate 90 and transmits reflected light reflected from the substrate 90 to the half mirror 40.

  The susceptor 20 supports the substrate 90. When the light source 30 receives a signal ST informing the start of crystal growth of the semiconductor layer from the control device 60, the light source 30 emits light having a predetermined wavelength. The half mirror 40 transmits light from the light source 30 to the substrate 90, receives reflected light reflected by the substrate 90 via the optical port 13, and guides the received reflected light to the detector 50.

  The detector 50 receives in advance from the control device 60 parameters including the composition of the semiconductor layer for crystal growth in the reaction vessel 10, the temperature in the reaction vessel 10, the pressure in the reaction vessel 10, and the target film thickness of the semiconductor layer. keeping.

  In addition, the detector 50 irradiates the substrate 90 with light having a predetermined wavelength from the light source 30, and changes the intensity of the reflected light when reflected by the substrate 90 and the film thickness of the semiconductor layer grown on the substrate 90. (= Fabry-Perot vibration) is calculated and held in advance.

  Further, the detector 50 holds an excessive film thickness Δd that allows actual crystal growth in the reaction vessel 10 after the supply of the source gas into the reaction vessel 10 is stopped.

  Further, when the detector 50 receives the signal ST from the control device 60, the detector 50 determines the film thickness of the semiconductor layer grown on the substrate 90 by a method described later based on the intensity change of the reflected light received from the half mirror 40. To detect. Then, the detector 50 calculates the control target film thickness by subtracting the excess film thickness Δd from the target film thickness of the semiconductor layer to be crystal-grown in the reaction vessel 10, and controls the detected film thickness of the semiconductor layer. When the upper target film thickness is reached, a stop signal STP for stopping the source gas is generated and output to the control device 60.

  The control device 60 holds the parameters described above, and transfers the held parameters to the detector 50.

  In addition, the control device 60 controls the MFCs 81 to 84 and the valves 91 to 94 when starting crystal growth of the semiconductor layer in the reaction vessel 10. More specifically, the control device 60 generates signals FL1 to FL4 and outputs them to the MFCs 81 to 84, respectively, and controls the flow rate of the raw material gas that flows through the MFCs 81 to 84. Further, the control device 60 generates signals SE1 to SE4 and outputs the signals SE1 to SE4 to the valves 91 to 94, respectively, to open and close the valves 91 to 94. In this case, the control device 60 generates an H (logic high) level signal SE1 for opening the valve 91, outputs the signal SE1 to the valve 91, and generates an L (logic low) level signal SE1 for closing the valve 91. And output to the valve 91. When opening and closing the valves 92 to 94, the control device 60 generates H level or L level signals SE2 to SE4 and outputs them to the valves 92 to 94, respectively. When receiving the stop signal STP from the detector 50, the control device 60 generates L level signals SE1 to SE4 and outputs them to the valves 91 to 94, respectively.

  Furthermore, when starting the crystal growth of the semiconductor layer in the reaction vessel 10, the control device 60 generates a signal ST and outputs it to the light source 30 and the detector 50.

  Although not shown in FIG. 1, the control device 60 can control the temperature of the substrate 90 and the pressure in the reaction vessel 10.

The gas supply source 71 holds a carrier gas such as nitrogen gas. The gas supply source 72 holds trimethylaluminum (TMA). The gas supply source 73 holds trimethyl gallium (TMG). The gas supply source 73 holds arsine (AsH ₃ ).

The MFC 81 supplies a carrier gas having a flow rate specified by the signal FL <b> 1 from the control device 60 to the gas supply port 11 via the valve 91. The MFC 82 supplies trimethylaluminum (TMA) having a flow rate specified by the signal FL <b> 2 from the control device 60 to the gas supply port 11 via the valve 92. The MFC 83 supplies trimethyl gallium (TMG) having a flow rate specified by the signal FL 3 from the control device 60 to the gas supply port 11 through the valve 93. The MFC 84 supplies arsine (AsH ₃ ) having a flow rate specified by the signal FL 4 from the control device 60 to the gas supply port 11 through the valve 94.

  The valves 91 to 94 open in response to H level signals SE1 to SE4 from the control device 60, respectively, and close in response to L level signals SE1 to SE4 from the control device 60.

FIG. 2 is a timing chart of signal and semiconductor layer thicknesses. With reference to FIG. 2, the excess film thickness Δd when AlAs is grown by the target film thickness will be described. When the trigger signal TG1 is generated at the timing t1, the valves 91, 92, and 94 are opened, and the carrier gas, trimethylaluminum (TMA), and arsine (AsH ₃ ) are supplied into the reaction vessel 10.

Then, crystal growth of AlAs is started at timing 2, and after timing t2, a trigger signal TG2 for stopping the source gas is generated at timing t3 when the thickness of AlAs reaches the thickness at which the crystal growth is desired. The valves 91, 92, 94 are closed. Thereafter, the supply of the carrier gas, trimethylaluminum (TMA), and arsine (AsH ₃ ) into the reaction vessel 10 is stopped at timing t4.

  Then, AlAs actually grows from the timing t3 when the valves 91, 92 and 94 are closed to the timing t4 when the time Δt elapses. The film thickness of the AlAs crystal that grows during this time Δt is the excess film thickness Δd. This excess film thickness Δd is measured in advance and held in the detector 50.

  FIG. 3 is a conceptual diagram of Fabry-Perot vibration. In FIG. 3, the vertical axis represents the reflectance of the reflected light, and the horizontal axis represents the thickness of the semiconductor layer. Referring to FIG. 3, the reflectance of the reflected light from the substrate 90 periodically changes with respect to the thickness of the semiconductor layer crystal-grown on the substrate 90. The detector 50 calculates and holds in advance a reflectance R that periodically changes with respect to the thickness of the semiconductor layer.

  When receiving the reflected light from the half mirror 40, the detector 50 detects the intensity of the received reflected light. Then, the detector 50 detects the intensity of the reflected light at a predetermined sampling timing, and detects a change in the intensity of the reflected light.

  Then, the detector 50 compares the detected change in the intensity of the reflected light with the periodically changing reflectivity R (= reflectance calculated in advance) shown in FIG. The film thickness of the formed semiconductor layer is detected.

  Then, when the film thickness of the semiconductor layer detected by the above-described method reaches a control target film thickness that is thinner than the original target film thickness by an excess film thickness Δd, the detector 50 generates a stop signal STP and performs control. Output to the device 60.

  FIG. 4 is a conceptual diagram for explaining a method of determining a target film thickness for control. In FIG. 4, the vertical axis represents the reflectance of the reflected light, and the horizontal axis represents the thickness of the semiconductor layer. In FIG. 4, white circles are actually measured values, and solid lines are calculated values.

Referring to FIG. 4, the actual measurement value is detected at a predetermined sampling timing. Found _{d n-1} is detected by the sampling timing _{t n-1,} measured value _{d n} is detected by the sampling timing _{t n,} Found _{d n + 1} is detected at the sampling time _{t n + 1.}

Then, when the target film thickness on control exists between the actually measured value _{d n + 1} and the actually measured value _{d n,} the detector 50, the growth rate D of the semiconductor layer _{D = (d n -d n-} 1) / The detected semiconductor is calculated by calculating (t _n −t _n−1 ) and calculating t = t _n + (target film thickness for control −d _n ) / D using the calculated growth rate D. The timing t at which the film thickness of the layer reaches the control target film thickness is detected.

FIG. 5 is a flowchart for explaining a thin film manufacturing method in the thin film manufacturing apparatus 100 shown in FIG. In addition, in FIG. 5, the manufacturing method of AlAs with a target film thickness of 100 nm and an excessive film thickness Δd _AlAs of 0.5 nm will be described.

Referring to FIG. 5, when a series of operations is started, AlAs growth conditions (AlAs composition, target film thickness, pressure in reaction vessel 10, temperature in reaction vessel 10, etc.) are created and created. The growth conditions and the excessive film thickness Δd (= Δd _AlAs ) are input to the control device 60 (step S1).

Thereafter, the control device 60 transfers the growth conditions and the excess film thickness Δd to the detector 50 (step S2). Accordingly, the detector 50 recognizes that AlAs having a target film thickness of 100 nm and an excess film thickness Δd _AlAs of 0.5 nm is crystal-grown in the reaction vessel 10, and reflects the reflection of AlAs held in advance. The relationship between the intensity change of the rate and the film thickness of AlAs is extracted. Then, preparation for growth is completed in the thin film manufacturing apparatus 100 (step S3).

When preparation for growth is completed, control device 60 generates H-level signals SE1, SE2, and SE4 and outputs the generated signals SE1, SE2, and SE4 to valves 91, 92, and 94, respectively. Further, the control device 60 outputs a signal FL1 for flowing a carrier gas having a predetermined flow rate, a signal FL2 for flowing trimethylaluminum (TMA) having a predetermined flow rate, and arsine (AsH ₃ ) having a predetermined flow rate. A signal FL4 for flowing is generated, and the generated signals FL1, FL2, FL4 are output to the MFCs 81, 82, 84, respectively.

The valves 91, 92, and 94 are opened in response to the H level signals SE1, SE2, and SE4, respectively. The MFC 81 supplies a carrier gas having a predetermined flow rate to the gas supply port 11 according to the signal FL1, and the MFC 82 supplies trimethylaluminum (TMA) having a predetermined flow rate to the gas supply port 11 according to the signal FL2. The MFC 84 supplies arsine (AsH ₃ ) having a predetermined flow rate to the gas supply port 11 in response to the signal FL4.

Trimethylaluminum (TMA) and arsine (AsH ₃ ) supplied from the gas supply port 11 into the reaction vessel 10 are thermally decomposed on the surface of the substrate 90 heated to a predetermined temperature, and AlAs grows on the substrate 90. Begin to. As a result, crystal growth of AlAs is started in the reaction vessel 10. Further, control device 60 generates signal ST in accordance with the output of signals SE1, SE2, SE4, FL1, FL2, and FL4, and outputs the signal ST to light source 30 and detector 50 (step S4).

  The light source 30 generates and emits light having a predetermined wavelength in accordance with the signal ST from the control device 60. The half mirror 40 transmits the light from the light source 30 as it is, irradiates the substrate 90 via the optical port 13, detects reflected light from the substrate 90, and guides it to the detector 50.

  When the detector 50 receives the reflected light from the half mirror 40, the detector 50 detects the intensity of the received reflected light, and detects the AlAs film thickness by the above-described method based on the detected intensity of the reflected light ( Step S5).

Further, the detector 50, the target thickness of the AlAs received from the control unit 60 (= 100 nm) and an excess thickness [Delta] d _AlAs (= 0.5 nm) on the basis, control over the target film thickness (= 100-0. 5 = 99.5 nm).

  The detector 50 generates a stop signal STP and outputs it to the control device 60 when the AlAs film thickness detected based on the intensity change of the reflected light reaches the control target film thickness (= 99.5 nm). (Step S6).

Then, the control device 60 generates L level signals SE1, SE2, SE4 in response to the stop signal STP from the detector 50 and outputs them to the valves 91, 92, 94, respectively. Are closed in response to the signals SE1, SE2 and SE4 of L level. Thereby, the supply of the carrier gas, trimethylaluminum (TMA), and arsine (AsH ₃ ) to the reaction vessel 10 is stopped (step S7). After the supply of the carrier gas, trimethylaluminum (TMA) and arsine (AsH ₃ ) to the reaction vessel 10 is stopped, _AlAs having an excessive film thickness Δd _AlAs (= 0.5 nm) grows in the reaction vessel 10. Thus, AlAs having a target film thickness (= 100 nm) is manufactured. Thus, a series of operations is completed.

  In the above description, the case where a single layer of AlAs is crystal-grown to a target film thickness (= 100 nm) has been described. However, in the first embodiment, the thin film manufacturing apparatus 100 includes two semiconductor layers. This also applies to the case of stacking.

  In the surface emitting laser element, a distributed Bragg reflector in which two semiconductor layers having different refractive indexes are alternately stacked is used, but the thin film manufacturing apparatus 100 is also used when manufacturing this distributed Bragg reflector.

  The distributed Bragg reflector is made of [AlAs / GaAs] with 35 periods, for example, with a pair of AlAs / GaAs. In this case, the target film thickness of AlAs is 111 nm, and the target film thickness of GaAs is 95 nm. AlAs has a refractive index of 2.909, and GaAs has a refractive index of 3.414.

  In the case of forming [AlAs / GaAs] with 35 periods using the thin film manufacturing apparatus 100, one layer of AlAs is formed, and then one layer of GaAs is formed. By repeating this 35 times, [AlAs / GaAs] with 35 periods is formed.

In this case, the controller 60 determines the growth conditions of AlAs (the composition of AlAs, the target film thickness, the pressure in the reaction vessel 10 and the temperature in the reaction vessel 10), the excess film thickness Δd (= Δd _AlAs ), Detector of growth conditions (GaAs composition, target film thickness, pressure in reaction vessel 10 and temperature in reaction vessel 10), excess film thickness Δd (= Δd _GaAs ), and target cycle number (= 35 cycles) Forward to 50.

  The detector 50 generates a stop signal STP1 (a kind of stop signal STP) when the formation of one layer of AlAs is completed and outputs the stop signal STP1 to the control device 60. When the formation of one layer of GaAs is completed, the detector 50 A kind of stop signal STP) is generated and output to the controller 60. When the number of periods reaches the target number of periods, a stop signal STP3 (a kind of stop signal STP) is generated and output to the controller 60.

  FIG. 6 is a flowchart for explaining a method of manufacturing a distributed Bragg reflector in the thin film manufacturing apparatus 100 shown in FIG.

Referring to FIG. 6, when a series of operations is started, AlAs growth conditions (AlAs composition, target film thickness, pressure in reaction vessel 10 and temperature in reaction vessel 10 and the like) and GaAs growth conditions ( The composition of GaAs, the target film thickness, the pressure in the reaction vessel 10 and the temperature in the reaction vessel 10 are created, and the created growth conditions, excess film thickness Δd (= Δd _AlAs ), Δd (= Δd _GaAs ) The target number of cycles (= 35 cycles) is input to the control device 60 (step S11).

Thereafter, the control device 60 transfers the AlAs growth conditions, the GaAs growth conditions, the excess film thickness Δd (= Δd _AlAs ), Δd (= Δd _GaAs ), and the target period number to the detector 50 (step S12). As a result, the detector 50 has a 35-period [35 nm] pair of _AlAs having a target film thickness (= 111 nm) and excess film thickness Δd _AlAs and _GaAs having a target film thickness (= 95 nm) and excess film thickness Δd _GaAs . Recognizing that AlAs / GaAs] grows in the reaction vessel 10, the intensity change of the reflectance of 35 cycles of [AlAs / GaAs] and the thickness of 35 cycles of [AlAs / GaAs] Extract the relationship. Then, preparation for growth is completed in the thin film manufacturing apparatus 100 (step S13).

When preparation for growth is completed, control device 60 generates H-level signals SE1, SE2, and SE4 and outputs the generated signals SE1, SE2, and SE4 to valves 91, 92, and 94, respectively. Further, the control device 60 outputs a signal FL1 for flowing a carrier gas having a predetermined flow rate, a signal FL2 for flowing trimethylaluminum (TMA) having a predetermined flow rate, and arsine (AsH ₃ ) having a predetermined flow rate. A signal FL4 for flowing is generated, and the generated signals FL1, FL2, FL4 are output to the MFCs 81, 82, 84, respectively.

The valves 91, 92, and 94 are opened in response to the H level signals SE1, SE2, and SE4, respectively. The MFC 81 supplies a carrier gas having a predetermined flow rate to the gas supply port 11 according to the signal FL1, and the MFC 82 supplies trimethylaluminum (TMA) having a predetermined flow rate to the gas supply port 11 according to the signal FL2. The MFC 84 supplies arsine (AsH ₃ ) having a predetermined flow rate to the gas supply port 11 in response to the signal FL4.

Trimethylaluminum (TMA) and arsine (AsH ₃ ) supplied from the gas supply port 11 into the reaction vessel 10 are thermally decomposed on the surface of the substrate 90 heated to a predetermined temperature, and AlAs grows on the substrate 90. Begin to. As a result, crystal growth of AlAs is started in the reaction vessel 10. Further, control device 60 generates signal ST1 (a kind of signal ST) in accordance with the output of signals SE1, SE2, SE4, FL1, FL2, and FL4, and outputs the signal ST1 to light source 30 and detector 50 (step S14).

  The light source 30 generates and emits light having a predetermined wavelength in accordance with the signal ST1 from the control device 60. The half mirror 40 transmits the light from the light source 30 as it is, irradiates the substrate 90 via the optical port 13, detects reflected light from the substrate 90, and guides it to the detector 50.

  When the detector 50 receives the reflected light from the half mirror 40, the detector 50 detects the intensity of the received reflected light, and detects the AlAs film thickness by the above-described method based on the detected intensity of the reflected light ( Step S15).

Further, the detector 50 on the basis of the target film thickness (= 111 nm) and an excess thickness [Delta] d _AlAs of AlAs received from the control unit 60 calculates the control on the target film thickness (= 111nm-Δd _AlAs).

When the thickness of the AlAs detected based on the change in the intensity of the reflected light reaches the control target thickness (= 111 nm−Δd _AlAs ), the detector 50 generates a stop signal STP1 and sends it to the control device 60. Output (step S16).

Then, control device 60 generates L level signals SE1, SE2, SE4 in response to stop signal STP1 from detector 50 and outputs them to valves 91, 92, 94, respectively. Are closed in response to the signals SE1, SE2 and SE4 of L level. Thereby, the supply of the carrier gas, trimethylaluminum (TMA), and arsine (AsH ₃ ) to the reaction vessel 10 is stopped (step S17). After the supply of the carrier gas, trimethylaluminum (TMA) and arsine (AsH ₃ ) to the reaction vessel 10 is stopped, in the reaction vessel 10, _AlAs having an excess film thickness Δd _AlAs grows, and the target film thickness ( = 1 1 nm) is produced.

Thereafter, control device 60 generates H-level signals SE1, SE3, and SE4, and outputs the generated H-level signals SE1, SE3, and SE4 to valves 91, 93, and 94, respectively. Further, the control device 60 outputs a signal FL1 for flowing a carrier gas having a predetermined flow rate, a signal FL3 for flowing trimethylgallium (TMG) having a predetermined flow rate, and arsine (AsH ₃ ) having a predetermined flow rate. A signal FL4 for flowing is generated, and the generated signals FL1, FL3, FL4 are output to the MFCs 81, 83, 84, respectively.

The valves 91, 93, and 94 are opened in response to the H level signals SE1, SE3, and SE4, respectively. The MFC 81 supplies a carrier gas having a predetermined flow rate to the gas supply port 11 according to the signal FL1, and the MFC 83 supplies trimethyl gallium (TMG) having a predetermined flow rate to the gas supply port 11 according to the signal FL3. The MFC 84 supplies arsine (AsH ₃ ) having a predetermined flow rate to the gas supply port 11 in response to the signal FL4.

Trimethylgallium (TMG) and arsine (AsH ₃ ) supplied from the gas supply port 11 into the reaction vessel 10 are thermally decomposed on the surface of the substrate 90 heated to a predetermined temperature, and GaAs grows on the substrate 90. Begin to. Thereby, crystal growth of GaAs is started in the reaction vessel 10. Further, control device 60 generates signal ST2 (a kind of signal ST) in accordance with the output of signals SE1, SE3, SE4, FL1, FL3, and FL4, and outputs the signal ST2 to light source 30 and detector 50 (step S18).

  The light source 30 generates and emits light having a predetermined wavelength in accordance with the signal ST2 from the control device 60. The half mirror 40 transmits the light from the light source 30 as it is, irradiates the substrate 90 via the optical port 13, detects reflected light from the substrate 90, and guides it to the detector 50.

  When receiving the reflected light from the half mirror 40, the detector 50 detects the intensity of the received reflected light, and detects the film thickness of GaAs by the above-described method based on the detected intensity of the reflected light ( Step S19).

The detector 50 calculates the target film thickness (= 95 nm−Δd _GaAs ) on the basis of the _GaAs target film thickness (= 95 nm) and the excess film thickness Δd _GaAs received from the control device 60.

When the thickness of the GaAs film detected based on the change in the intensity of the reflected light reaches the control target film thickness (= 95 nm−Δd _AlAs ), the detector 50 generates a stop signal STP2 and sends it to the control device 60. Output (step S20).

Then, control device 60 generates L level signals SE1, SE3, SE4 in response to stop signal STP2 from detector 50 and outputs them to valves 91, 93, 94, respectively. , Respectively, in response to the L level signals SE1, SE3, SE4. Thereby, the supply of the carrier gas, trimethylgallium (TMG), and arsine (AsH ₃ ) to the reaction vessel 10 is stopped (step S21). After the supply of the carrier gas, trimethyl gallium (TMG) and arsine (AsH ₃ ) to the reaction vessel 10 is stopped, _GaAs having an excess film thickness Δd _GaAs grows in the reaction vessel 10 and the target film thickness ( A layer of GaAs with = 95 nm) is produced.

  Thereafter, the detector 50 determines whether or not the number of cycles has reached the target number of cycles (= 35 cycles) (step S22). When it is determined that the number of cycles has not reached the target number of cycles, the series of operations returns to step S14 until the number of cycles reaches the target number of cycles in step S22. Steps S14 to S22 are repeatedly executed.

  When it is determined in step S22 that the number of cycles has reached the target number of cycles, the detector 50 generates and controls a stop signal STP3 (a kind of stop signal STP) for stopping all source gases. The data is output to the device 60 (step S23).

  In response to stop signal STP3 from detector 50, control device 60 generates L-level signals SE1 to SE4 and outputs them to valves 91 to 94, respectively. The valves 91 to 94 are closed according to the L level signals SE1 to SE4, respectively. Thereby, all the source gases are stopped (step S24). And a series of operation | movement is complete | finished.

  Thus, the thin film manufacturing apparatus 100 sets the film thickness of AlAs and GaAs constituting the distributed Bragg reflector as the target film thickness even when the distributed Bragg reflector is manufactured by alternately stacking two semiconductor layers. Thus, a distributed Bragg reflector can be manufactured.

Even when the excess film thickness Δd _AlAs when forming one layer of AlAs is 0.5 nm, when forming a distributed Bragg reflector, 35 cycles of [AlAs / GaAs] are stacked. As a whole, a large error occurs, and the error is about 6.5 nm at the oscillation wavelength of the surface emitting laser element in the 1300 nm band.

  As described above, in the surface emitting laser element, such a slight film thickness error is likely to appear as a characteristic difference that cannot be ignored.

  As in the first embodiment described above, the film thickness obtained by subtracting the excess film thickness Δd from the target film thickness is set as the control target film thickness, and the actually measured film thickness of the semiconductor layer grown in the reaction vessel 10 is controlled. When the target film thickness is reached, each semiconductor layer is crystal-grown so as to stop the source gas, whereby a laminated structure such as a distributed Bragg reflector with few errors can be manufactured.

  In the first embodiment, the thin film manufacturing apparatus 100 may stack three or more kinds of semiconductors.

  In the above description, the crystal growth of the compound semiconductor layer has been described. However, the present invention is not limited to this, and the thin film manufacturing apparatus 100 is made of a single element such as silicon (Si) and germanium (Ge). It can also be applied to the manufacture of crystalline semiconductors.

  Further, in the above description, the crystal growth of the semiconductor layer by the MOCVD method has been described. However, in the present invention, the thin film manufacturing apparatus 100 can also be applied to a film forming method such as an MBE (Molecular Beam Epitaxy) method and a vapor deposition method. .

  Further, the growing film is not limited to a semiconductor, and may be a film of a dielectric, for example.

[Embodiment 2]
FIG. 7 is a schematic diagram showing the configuration of the thin film manufacturing apparatus according to the second embodiment. Referring to FIG. 7, thin film manufacturing apparatus 100A according to the second embodiment is obtained by replacing detector 50 and control apparatus 60 of thin film manufacturing apparatus 100 shown in FIG. 1 with detector 50A and control apparatus 60A, respectively. Others are the same as the thin film manufacturing apparatus 100.

  When the detector 50A detects the film thickness of the semiconductor layer crystal-grown in the reaction vessel 10 by the above-described method, the detector 50A outputs the detected film thickness to the control device 60A. Further, when the detector 50A receives the corrected excessive film thickness Δd_h obtained by correcting the excessive film thickness Δd from the control device 60A, the detector 50A calculates the control target film thickness based on the received corrected excessive film thickness Δd_h. When the film thickness of the semiconductor layer detected by the method reaches the target film thickness for control (the target film thickness for control calculated using the corrected excess film thickness Δd_h), a stop signal STP is generated to the control device 60A. Output. Other than that, the detector 50A performs the same function as the detector 50.

  When the thickness of the semiconductor layer is received from the detector 50A, the control device 60A corrects the excessive film thickness Δd of the semiconductor layer based on the received film thickness, and the corrected excessive film thickness Δd_h after the correction is detected by the detector. Output to 50A. The control device 60A performs the same functions as the control device 60 in other respects.

  As described above, the thin film manufacturing apparatus 100A according to the second embodiment corrects the excessive film thickness Δd by using the film thickness of the semiconductor layer that is actually crystal-grown, and uses the corrected corrected excessive film thickness Δd_h for control. It has the structure which determines a target film thickness.

  The reason for adopting such a configuration is as follows. In general, in a thin film growth method, even if the growth conditions are the same, the growth rate of each time does not always coincide completely, and thus the excessive film thickness Δd measured in advance may include an error. Therefore, the excess film thickness Δd, which is a correction parameter for controlling the film thickness, is corrected during crystal growth.

  Hereinafter, the case of crystal growth of a semiconductor layer having a target film thickness while correcting the excess film thickness Δd will be described by taking as an example the case of crystal growth of [AlAs / GaAs] with 35 periods. In this case, the target film thickness of AlAs is 111 nm, and the target film thickness of GaAs is 95 nm.

FIG. 8 is a flowchart for explaining a manufacturing method of the distributed Bragg reflector in the thin film manufacturing apparatus 100A shown in FIG. When a series of operations is started, AlAs growth conditions (AlAs composition, target film thickness, pressure in reaction vessel 10 and temperature in reaction vessel 10 etc.) and GaAs growth conditions (GaAs composition, target film thickness). , The pressure in the reaction vessel 10 and the temperature in the reaction vessel 10) are created, and the created growth conditions, excess film thickness Δd (= Δd _AlAs ), Δd (= Δd _GaAs ), and target period number (= 35) (Period) is input to the control device 60A (step S31).

Thereafter, the control device 60A transfers the AlAs growth conditions, the GaAs growth conditions, the excess film thickness Δd (= Δd _AlAs ), Δd (= Δd _GaAs ), and the target period number to the detector 50A (step S32). As a result, the detector 50A has a 35-period [35] pair of _AlAs having a target film thickness (= 111 nm) and excess film thickness Δd _AlAs and _GaAs having a target film thickness (= 95 nm) and excess film thickness Δd _GaAs . Recognizing that AlAs / GaAs] grows in the reaction vessel 10, the intensity change of the reflectance of 35 cycles of [AlAs / GaAs] and the thickness of 35 cycles of [AlAs / GaAs] Extract the relationship. Then, preparation for growth is completed in the thin film manufacturing apparatus 100A (step S33).

When preparation for growth is completed, control device 60A generates H-level signals SE1, SE2, and SE4, and outputs the generated signals SE1, SE2, and SE4 to valves 91, 92, and 94, respectively. The control device 60A also outputs a signal FL1 for flowing a carrier gas having a predetermined flow rate, a signal FL2 for flowing trimethylaluminum (TMA) having a predetermined flow rate, and arsine (AsH ₃ ) having a predetermined flow rate. A signal FL4 for flowing is generated, and the generated signals FL1, FL2, FL4 are output to the MFCs 81, 82, 84, respectively.

The valves 91, 92, and 94 are opened in response to the H level signals SE1, SE2, and SE4, respectively. The MFC 81 supplies a carrier gas having a predetermined flow rate to the gas supply port 11 according to the signal FL1, and the MFC 82 supplies trimethylaluminum (TMA) having a predetermined flow rate to the gas supply port 11 according to the signal FL2. The MFC 84 supplies arsine (AsH ₃ ) having a predetermined flow rate to the gas supply port 11 in response to the signal FL4.

Trimethylaluminum (TMA) and arsine (AsH ₃ ) supplied from the gas supply port 11 into the reaction vessel 10 are thermally decomposed on the surface of the substrate 90 heated to a predetermined temperature, and AlAs grows on the substrate 90. Begin to. As a result, crystal growth of AlAs is started in the reaction vessel 10. Further, control device 60A generates signal ST1 (a type of signal ST) in accordance with the output of signals SE1, SE2, SE4, FL1, FL2, and FL4, and outputs the signal ST1 to light source 30 and detector 50A (step S34).

  The light source 30 generates and emits light having a predetermined wavelength according to the signal ST1 from the control device 60A. The half mirror 40 transmits the light from the light source 30 as it is, irradiates the substrate 90 via the optical port 13, and detects the reflected light from the substrate 90 and guides it to the detector 50A.

  When the detector 50A receives the reflected light from the half mirror 40, the detector 50A detects the intensity of the received reflected light, and detects the thickness of the AlAs by the above-described method based on the detected intensity of the reflected light ( Step S35).

Further, the detector 50A on the basis of the target film thickness (= 111 nm) and an excess thickness [Delta] d _AlAs of AlAs received from the control unit 60A, to the operation control on the target film thickness (= 111nm-Δd _AlAs). The excessive film thickness Δd _AlAs used in this case is a film thickness measured in advance.

When the thickness of the AlAs detected based on the change in the intensity of the reflected light reaches the control target thickness (= 111 nm−Δd _AlAs ), the detector 50A generates a stop signal STP1 and sends it to the control device 60A. Output (step S36).

Then, control device 60A generates L level signals SE1, SE2, SE4 in response to stop signal STP1 from detector 50A and outputs them to valves 91, 92, 94, respectively. Are closed in response to the signals SE1, SE2 and SE4 of L level. Thereby, the supply of the carrier gas, trimethylaluminum (TMA), and arsine (AsH ₃ ) to the reaction vessel 10 is stopped (step S37).

Thereafter, the detector 50A is the method described above, to detect the thickness _{d 1} of AlAs, to hold the film thickness _{d 1} that its detection.

  Then, the detector 50A determines whether or not to stop the crystal growth (step S38). When it is determined in step S38 that the crystal growth is not interrupted, the series of operations returns to step S34, and the above-described steps S34 to S38 are repeatedly executed.

  When Steps S34 to S38 are executed after the AlAs crystal growth is completed, GaAs crystal growth is performed in Steps S34 to S36, and after the GaAs crystal growth is completed, Steps S34 to S38 are performed. When S38 is executed, crystal growth of AlAs is performed in steps S34 to S36.

  A detailed operation when Steps S34 to S38 are performed after the crystal growth of AlAs is completed will be described.

After “NO” in step S38, control device 60A generates H-level signals SE1, SE3, and SE4 and outputs the generated H-level signals SE1, SE3, and SE4 to valves 91, 93, and 94, respectively. . The control device 60A also outputs a signal FL1 for flowing a carrier gas having a predetermined flow rate, a signal FL3 for flowing trimethylgallium (TMG) having a predetermined flow rate, and arsine (AsH ₃ ) having a predetermined flow rate. A signal FL4 for flowing is generated, and the generated signals FL1, FL3, FL4 are output to the MFCs 81, 83, 84, respectively.

The valves 91, 93, and 94 are opened in response to the H level signals SE1, SE3, and SE4, respectively. The MFC 81 supplies a carrier gas having a predetermined flow rate to the gas supply port 11 according to the signal FL1, and the MFC 83 supplies trimethyl gallium (TMG) having a predetermined flow rate to the gas supply port 11 according to the signal FL3. The MFC 84 supplies arsine (AsH ₃ ) having a predetermined flow rate to the gas supply port 11 in response to the signal FL4.

Trimethylgallium (TMG) and arsine (AsH ₃ ) supplied from the gas supply port 11 into the reaction vessel 10 are thermally decomposed on the surface of the substrate 90 heated to a predetermined temperature, and GaAs grows on the substrate 90. Begin to. Thereby, crystal growth of GaAs is started in the reaction vessel 10. Further, control device 60A generates signal ST2 (a kind of signal ST) in accordance with the output of signals SE1, SE3, SE4, FL1, FL3, and FL4, and outputs the signal ST2 to light source 30 and detector 50A (step S34).

  The light source 30 generates and emits light having a predetermined wavelength according to the signal ST2 from the control device 60A. The half mirror 40 transmits the light from the light source 30 as it is, irradiates the substrate 90 via the optical port 13, and detects the reflected light from the substrate 90 and guides it to the detector 50A.

  When the detector 50A receives the reflected light from the half mirror 40, the detector 50A detects the intensity of the received reflected light, and detects the film thickness of GaAs by the above-described method based on the detected intensity of the reflected light ( Step S35).

The detector 50A calculates a control target film thickness (= 95 nm−Δd _GaAs ) based on the _GaAs target film thickness (= 95 nm) and the excess film thickness Δd _GaAs received from the control device 60A. The excessive film thickness Δd _GaAs used in this case is also a film thickness actually measured in advance.

When the film thickness of GaAs detected based on the intensity change of the reflected light reaches the control target film thickness (= 95 nm−Δd _AlAs ), the detector 50A generates a stop signal STP2 and sends it to the control device 60A. Output (step S36).

Then, control device 60A generates L level signals SE1, SE3, SE4 in response to stop signal STP2 from detector 50A and outputs them to valves 91, 93, 94, respectively. , Respectively, in response to the L level signals SE1, SE3, SE4. Thereby, the supply of the carrier gas, trimethyl gallium (TMG) and arsine (AsH ₃ ) to the reaction vessel 10 is stopped (step S37).

Thereafter, the detector 50A is the method described above, to detect the GaAs of thickness _{d 2,} to hold the film thickness _{d 2} that its detection.

On the other hand, when it is determined in step S38 that the crystal growth is interrupted, the control device 60A generates L level signals SE1 to SE4 and outputs them to the valves 91 to 94, respectively, and stops all the source gases. Then, the detector 50A analyzes the film thickness, composition, and growth temperature of each layer (each of the AlAs layer and the GaAs layer) grown from the previous crystal growth interruption to the current crystal growth interruption. Then, the detector 50A transfers data including the film thickness, composition, and growth temperature of each analyzed layer (each of the AlAs layer and the GaAs layer) to the control device 60A (step S39). Incidentally, the detector 50A holds and detects the film thickness _{d 1} of the AlAs every crystal growth of AlAs one layer is completed, GaAs of thickness _{d 2} each time GaAs crystal growth of one layer is completed Therefore, it is possible to easily analyze the film thickness of each layer (each of the AlAs layer and the GaAs layer) grown between the interruption of the previous crystal growth and the interruption of the current crystal growth.

Thereafter, the control device 60A determines the deviation of the film thickness of each layer from the target film thickness based on the data received from the detector 50A (= film thickness, composition and growth temperature of each layer (AlAs layer and GaAs layer)). The amount is calculated (step S40). More specifically, the detector 50A sets the deviation amount of the AlAs film thickness from the target film thickness 111− when the AlAs film thickness d ₁ measured after crystal growth of one layer of AlAs is 111.5 nm. Calculate 111.5 = −0.5 nm. Further, the detector 50A, when GaAs having a thickness _{d 2} which is measured after the GaAs crystal growth of one layer is 95.6Nm, the amount of deviation from a target film thickness of the film thickness of the GaAs 95-95.6 = Calculate as -0.6 nm.

  Then, after calculating the film thickness deviation amount, control device 60A determines whether or not to correct excess film thickness Δd (step S41). In this case, when the film thickness of each layer is deviated from the target film thickness, the control device 60A determines to correct the excess film thickness Δd, and when the film thickness of each layer substantially matches the target film thickness, It is determined that the excessive film thickness Δd is not corrected.

  When it is determined in step S41 that the excess film thickness Δd is not corrected, the series of operations returns to step S34.

On the other hand, when it is determined in step S41 that the excess film thickness Δd is to be corrected, the control device 60A calculates the control target film thickness again. More specifically, control device 60A, since the amount of deviation from a target film thickness of the film thickness of the AlAs was -0.5 nm, the deviation to the target thickness on the current control (= 111-Δd _AlAs) The amount (= −0.5 nm) is added to calculate a new target film thickness (= 111−Δd _AlAs −0.5 nm). Further, since the deviation amount of the GaAs film thickness from the target film thickness is −0.6 nm, the control device 60A has a deviation amount (= −−) to the current control target film thickness (= 95−Δd _GaAs ). 0.6 nm) is added to calculate a new control target film thickness (= 95−Δd _GaAs −0.6 nm).

Note that calculating the new control target film thickness (= 111−Δd _AlAs −0.5 nm) corresponds to correcting the excess film thickness Δd _AlAs of _AlAs from Δd _AlAs to Δd _AlAs +0.5 nm. Calculating the new control target film thickness (= 95−Δd _GaAs −0.6 nm) corresponds to correcting the _GaAs excess film thickness Δd _GaAs from Δd _GaAs to Δd _GaAs +0.6 nm.

  Then, after calculating the new control target film thickness, the control device 60A transfers the calculated control target film thickness to the detector 50A (step S42).

  Thereafter, when the detector 50A receives a new control target film thickness from the control device 60A, the detector 50A determines whether or not the number of cycles has reached the target number of cycles (= 35 cycles) (step S43). When it is determined that the number of cycles has not reached the target number of cycles, the series of operations returns to step S34, and the above-described operation is performed until it is determined in step S43 that the number of cycles has reached the target number of cycles. Steps S34 to S43 are repeatedly executed.

  When it is determined in step S43 that the number of cycles has reached the target number of cycles, the detector 50A generates and controls a stop signal STP3 (a kind of stop signal STP) for stopping all source gases. In response to the stop signal STP3 from the detector 50A, the control device 60A generates L level signals SE1 to SE4 and outputs them to the valves 91 to 94, respectively. The valves 91 to 94 are closed according to the L level signals SE1 to SE4, respectively. Thereby, all the source gases are stopped (step S44). And a series of operation | movement is complete | finished.

  When the series of operations returns to step S34 via step S42, in steps S34 to S37, the corrected target film thickness (= excessive film thickness after correction) is used to obtain AlAs. Alternatively, crystal growth of AlAs or GaAs is performed so that GaAs has a target film thickness.

  In step S38, the determination that the crystal growth is interrupted is performed at an arbitrary timing. For example, it is determined that the crystal growth is interrupted when the crystal growth of one layer of AlAs or one layer of GaAs is completed, or when a pair of AlAs / GaAs is stacked for several cycles.

  When the crystal growth is interrupted when the crystal growth of one layer of AlAs or one layer of GaAs is completed, the correction of the target film thickness for control (correction of the excess film thickness Δd) is performed by one layer of AlAs or one layer. This is performed every time GaAs crystal growth is completed.

  When crystal growth is interrupted when AlAs / GaAs pairs are stacked for several cycles, correction of the target film thickness for control (correction of excess film thickness Δd) is performed by [AlAs / GaAs] of several cycles. This is done every time it is stacked. In this case, the amount of deviation of the film thickness of each layer from the target film thickness may be obtained by calculating the average value of the film thickness for several layers and using the calculated average value and the target film thickness.

  As described above, in the second embodiment, the excess film thickness is corrected based on the measured film thickness of the semiconductor layer, and the corrected crystal thickness is corrected so that each layer has the target film thickness. Since the growth is performed, the semiconductor layer can be crystal-grown by further reducing the slip amount from the target film thickness.

  In the above description, the case where the two semiconductor layers are crystal-grown has been described. However, the present invention is not limited to this in the second embodiment, and the present invention is not limited to this. It is also applied when growing.

  Others are the same as in the first embodiment.

[Embodiment 3]
FIG. 9 is a schematic diagram showing the configuration of the thin film manufacturing apparatus according to the third embodiment. Referring to FIG. 9, thin film manufacturing apparatus 100B according to Embodiment 3 is the same as thin film manufacturing apparatus 100A except that control device 60A of thin film manufacturing apparatus 100A shown in FIG. 7 is replaced with control device 60B. It is.

  The control device 60B calculates the reflection band of the semiconductor layer crystal-grown in the reaction vessel 10 using the film thickness of the semiconductor layer detected by the detector 50A. Then, control device 60B corrects the control target film thickness (= corrects excessive film thickness Δd) so that the calculated center value of the reflection band becomes the original target value. In addition, the control device 60B performs the same function as the control device 60A.

  As described above, the thin film manufacturing apparatus 100B according to the third embodiment corrects the excess film thickness Δd so that the center value of the reflection band of the semiconductor layer actually grown has the original target value, and the corrected overcorrection is corrected. The control target film thickness is determined using the film thickness Δd_h.

  The reason for adopting such a configuration is as follows. Since the film thickness per layer of AlAs / GaAs constituting the distributed Bragg reflector is as thin as several tens of nanometers, if the detector 50A is used to detect the film thickness of AlAs or GaAs in real time, the number of samplings is reduced. It is easy and it may be difficult to accurately detect the film thickness. For this reason, even if AlAs or GaAs is crystal-grown while correcting the excess film thickness Δd based on the actually measured film thickness, the film thickness after growth of each layer may not completely match the target film thickness. Therefore, the excess film thickness Δd is corrected so that the center value of the reflection band of the semiconductor layer actually grown has the original target value, and the corrected target film thickness Δd_h is used to set the target film thickness for control. The structure to be decided is adopted.

  Hereinafter, the case of crystal growth of a semiconductor layer having a target film thickness while correcting the excess film thickness Δd will be described by taking as an example the case of crystal growth of [AlAs / GaAs] with 35 periods. In this case, the target film thickness of AlAs is 111.7 nm, and the target film thickness of GaAs is 95.2 nm. The central wavelength of the reflection band of [AlAs / GaAs] of this 35 period is 1300 nm.

  FIG. 10 is a diagram showing a reflectance spectrum. In FIG. 10, the vertical axis represents the reflectance, and the horizontal axis represents the wavelength. Curve k1 represents the reflectance spectrum when the center wavelength of the reflection band is 1290 nm, and curve k2 represents the reflectance spectrum when the center wavelength of the reflection band is 1300 nm.

  For example, the control device 60B calculates the reflectance spectrum based on the film thickness of AlAs (or GaAs) when 15 cycles of [AlAs / GaAs] are crystal-grown in the reaction vessel 10. As a result, it is assumed that the calculated reflectance spectrum becomes the reflectance spectrum indicated by the curve k1.

The central wavelength of the reflection band is the wavelength when the reflectance is the highest, and in a distributed Bragg reflector having a laminated structure of [AlAs / GaAs], the AlAs or GaAs per layer when the reflectance is the highest. The film thickness d is λ _MAX = 4nd. Note that n is the refractive index of AlAs or GaAs.

In the calculated reflectance spectrum, the control device 60B uses λ _MAX = 4nd when the wavelength at which the reflectance is highest is shifted from the original wavelength (= 1300 nm), and the reflectance is highest. The film thickness d of AlAs or GaAs when the wavelength becomes the original wavelength (= 1300 nm) is calculated.

  Then, the control device 60B corrects the excess film thickness Δd so that AlAs or GaAs having the calculated film thickness d is crystal-grown. That is, the control device 60B corrects the excess film thickness Δd so that the center wavelength of the [AlAs / GaAs] reflection band of 35 periods becomes the original center wavelength (= 1300 nm).

  FIG. 11 is a flowchart for explaining a method of manufacturing a distributed Bragg reflector in the thin film manufacturing apparatus 100B shown in FIG. The flowchart shown in FIG. 11 is the same as the flowchart shown in FIG. 8 except that steps S41A and S42A are inserted between step S41 and step S42 in the flowchart shown in FIG.

  When the flowchart shown in FIG. 11 is executed, if [AlAs / GaAs] of 15 cycles is stacked, it is determined in step S38 that the crystal growth is stopped.

  Referring to FIG. 11, when it is determined in step S41 that correction of excess film thickness Δd is to be performed, control device 60B performs the remaining distributed Bragg reflection for compensating the reflectance of the distributed Bragg reflector (DBR). The film thickness of AlAs and GaAs for forming the vessel (DBR) is calculated (step S41A).

  That is, in step S38, crystal growth is interrupted when 15 cycles of [AlAs / GaAs] are stacked, so that the control device 60B stacks [AlAs / GaAs] for the remaining 20 cycles. The film thickness of AlAs and GaAs is calculated.

  It is assumed that the average film thickness for 15 cycles of AlAs when 15 [AlAs / GaAs] layers are stacked is 110.8 nm, and the average film thickness for 15 cycles of GaAs is 94.4 nm.

  Control device 60B detects the film thickness of 15 cycles of AlAs and GaAs included in the data (the film thickness, composition and growth temperature of each layer (each of the AlAs layer and GaAs layer)) received from detector 50A in step S39. Then, the average film thickness (= 110.8 nm) of 15 cycles of AlAs and the average film thickness (= 94.4 nm) of 15 cycles of GaAs are calculated.

  Then, the control device 60B uses the calculated average thickness of AlAs (= 110.8 nm) and the average thickness of GaAs (= 94.4 nm) to calculate a reflectance spectrum (see curve k1 in FIG. 10). Calculate and detect that the center wavelength of the reflection band of the distributed Bragg reflector (DBR) is 1290 nm.

  Since the center wavelength of 1290 nm is deviated from the original center wavelength of 1300 nm, the control device 60B stacks the remaining 20 cycles of [AlAs / GaAs] to form 35 cycles of [AlAs / GaAs]. In this case, the film thicknesses of the AlAs and GaAs layers are calculated so that the center wavelength of the reflection band of the distributed Bragg reflector (DBR) is 1300 nm.

  More specifically, when [AlAs / GaAs] of 35 cycles is grown with the remaining 20 cycles of AlAs and GaAs film thickness (optical length) as a parameter with respect to 15 cycles of already grown crystals. Calculate the reflectance spectrum. Once the material, composition and film thickness are determined, this reflectance spectrum can be uniquely calculated. Then, the center wavelength is obtained based on the calculated reflectance spectrum, and if the obtained center wavelength is deviated from 1300 nm, the film thicknesses (optical lengths) of AlAs and GaAs are respectively specified according to the deviation direction. The film thicknesses of AlAs and GaAs are determined so that the center wavelength is 1300 nm while keeping the optical length of the same λ / 4 at the wavelength. That is, if the center wavelength is shifted to a wavelength shorter than 1300 nm, the film thickness of AlAs and GaAs is increased, and if the center wavelength is shifted to a wavelength longer than 1300 nm, the film thickness of AlAs and GaAs is decreased. Then, the film thicknesses of AlAs and GaAs are determined so that the center wavelength becomes 1300 nm.

The AlAs film thickness x ₁ (= the AlAs film thickness when the [AlAs / GaAs] for the remaining 20 cycles is laminated) determined by such a method is 112.3 nm, and the GaAs film thickness x _2. (= Film thickness of GaAs when stacking [AlAs / GaAs] for the remaining 20 cycles) is 95.8 nm.

  In this way, the controller 60B calculates the film thicknesses of AlAs and GaAs for forming the remaining distributed Bragg reflector (DBR) for compensating the reflectance of the distributed Bragg reflector (DBR) (step). S41A).

  Thereafter, the control device 60B determines whether or not to change the control target film thickness (step S42A). In this case, if the central wavelength of the reflection band of the reflectance spectrum calculated using the average film thickness of 15 periods of AlAs and GaAs is deviated from the original central wavelength (= 1300 nm), the control device 60B controls the control. The center wavelength of the reflection band of the reflectance spectrum calculated using the average film thickness for 15 periods of AlAs and GaAs is substantially the same as the original center wavelength (= 1300 nm). For example, it is determined that the target film thickness for control is not changed.

  When it is determined in step S42A that the target film thickness for control is not changed, the series of operations returns to step S34.

  On the other hand, when it is determined in step S42A that the control target film thickness is to be changed, the series of operations proceeds to step S42 described above.

In this case, in step S42, the control device 60B uses the AlAs film thickness (= 112.3 nm) and the GaAs film thickness (= 95.8 nm) calculated in step S41A to establish a new control target for AlAs. The film thickness is calculated as 112.3 nm−Δd _AlAs, and the new target film thickness for control of _GaAs is calculated as 95.8 nm−Δd _GaAs .

  Therefore, when the series of operations returns to step S34 via step S42, crystal growth of AlAs or GaAs is performed using the new target film thickness for control.

Note that calculating the new control target film thickness of _AlAs as 112.3 nm−Δd _AlAs corresponds to correcting the excess film thickness Δd _AlAs of _AlAs from Δd _AlAs to Δd _AlAs −1.5 nm, The calculation of the new control target film thickness of _GaAs as 95.8 nm−Δd _GaAs corresponds to the correction of the excess film thickness Δd _GaAs of _GaAs from Δd _GaAs to Δd _GaAs −0.8 nm.

  As described above, according to the third embodiment, the thin film manufacturing apparatus 100B corrects the excess film thickness Δd so that the center value of the reflection band of the semiconductor layer that has actually grown crystal becomes the original target value. Since the target film thickness for control is determined using the corrected corrected excess film thickness Δd_h, the excess film can be reduced with less error than in the case of correcting the excess film thickness Δd using the actually measured film thickness per layer. The thickness Δd can be corrected, and finally a laminated structure (distributed Bragg reflector) having desired characteristics can be manufactured.

  In the above description, it has been described that the crystal growth is interrupted at the time when [AlAs / GaAs] for 15 cycles is stacked. However, the present invention is not limited to this, and [AlAs / GaAs for the other number of cycles. ] May be interrupted at the time of stacking.

  In the third embodiment, the thin film manufacturing apparatus 100B may stack three or more types of semiconductor layers by the method described above when stacking three or more types of semiconductor layers. In the case of crystal growth, one kind of semiconductor layer may be crystal grown by the above-described method.

[Embodiment 4]
FIG. 12 is a schematic diagram showing the configuration of the thin film manufacturing apparatus according to the fourth embodiment. Referring to FIG. 12, thin film manufacturing apparatus 100C according to the fourth embodiment controls light source 30 of thin film manufacturing apparatus 100B shown in FIG. 9 with light source 30A, detector 50A with detector 50B, and control device 60B. The apparatus is replaced with the apparatus 60C, and the others are the same as those of the thin film manufacturing apparatus 100B.

  The light source 30A emits light whose wavelengths are sequentially changed in a predetermined wavelength range in response to the interruption signal BRK from the detector 50B.

  When the crystal growth time in the reaction vessel 10 reaches the time during which the crystal growth is interrupted, the detector 50B generates an interruption signal BRK and outputs it to the light source 30A and the control device 60C. In addition, the detector 50B receives the reflected light emitted from the light source 30A and reflected by the substrate 90 from the half mirror 40, detects the intensity of the received reflected light, and grows a crystal in the reaction vessel 10 The reflectance spectrum of is detected. Then, detector 50B outputs the detected reflectance spectrum to control device 60C.

  The detector 50B otherwise performs the same function as the detector 50A.

  The control device 60C calculates the film thickness of the semiconductor layer crystal-grown in the reaction vessel 10 based on the reflectance spectrum received from the detector 50B. In this case, the control device 60C determines that the error between the reflectance spectrum calculated using the thickness of the semiconductor layer as a parameter and the reflectance spectrum actually measured by the detector 50B is minimized by the least square method. The film thickness is calculated. Then, control device 60C calculates the center wavelength of the reflection band using the calculated thickness of the semiconductor layer, and when the calculated center wavelength deviates from the original center wavelength, the same method as in the third embodiment Thus, the target film thickness for control in the crystal growth after the interruption is determined.

  Further, in response to the interruption signal BRK, the control device 60C generates L level signals SE1 to SE4 and outputs them to the valves 91 to 94, respectively, and stops all the source gases.

  The control device 60C otherwise performs the same function as the control device 60B.

  In the third embodiment, when the thickness of [AlAs / GaAs] grown in the reaction vessel 10 reaches the thickness of [AlAs / GaAs] for 15 cycles, the crystal growth is interrupted. In form 4, the crystal growth is interrupted when the [AlAs / GaAs] crystal growth time in the reaction vessel 10 reaches the time for [AlAs / GaAs] crystal growth for 15 cycles.

  Therefore, the detector 50B calculates the [AlAs / GaAs] crystal growth time for 15 periods based on the growth rate of AlAs and the growth rate of GaAs. The detector 50B has a built-in timer, and measures the time with the start of crystal growth. When the measured time reaches the calculated crystal growth time, the detector 50B generates a break signal BRK and supplies it to the control device 60C. Output.

  As described above, when the time for crystal growth of [AlAs / GaAs] for 15 cycles is reached, the crystal growth is interrupted for the following reason.

  When the film thickness of the semiconductor layer grown in the reaction vessel 10 is detected and controlled, the semiconductor layer grown in the reaction vessel 10 includes a very thin layer. In some cases, it is difficult to accurately detect the film thickness of all the layers, and it is difficult to control the film thickness based on the actually measured film thickness. Therefore, the [AlAs / GaAs] crystal growth time for 15 cycles is obtained in advance, and when the crystal growth time in the reaction vessel 10 reaches the [AlAs / GaAs] crystal growth time for 15 cycles, the crystal growth is interrupted. It was decided.

  FIG. 13 is a flowchart for explaining a manufacturing method of the distributed Bragg reflector in the thin film manufacturing apparatus 100C shown in FIG. The flowchart shown in FIG. 13 is obtained by replacing step S35 of the flowchart shown in FIG. 11 with step S35A, replacing step S36 with step S36A, and replacing step S41A with step S41B. The same.

  Referring to FIG. 13, after step S34 described above, detector 50B detects that the crystal growth time in reaction vessel 10 has reached the [AlAs / GaAs] crystal growth time of 15 periods (step). S35A). Then, the detector 50B generates an interruption signal BRK and outputs it to the light source 30A and the control device 60C.

  In response to the interruption signal BRK, the control device 60C generates L level signals SE1 to SE4 and outputs them to the valves 91 to 94, respectively, to stop the source gas. Thereby, crystal growth in the reaction vessel 10 is interrupted.

  On the other hand, the light source 30 </ b> A irradiates the substrate 90 with light whose wavelength continuously changes in the range of 1000 nm to 1600 nm through the half mirror 40 in response to the interruption signal BRK. The detector 50B detects the intensity of the reflected light reflected by the substrate 90 and detects the reflectance spectrum of [AlAs / GaAs] for 15 periods. Thereby, optical monitor measurement is performed (step S36A). Then, detector 50B outputs the detected reflectance spectrum to control device 60C.

  Thereafter, the above-described steps S37 to S41 are sequentially executed. When it is determined in step S41 that the excess film thickness Δd is to be corrected, the control device 60C receives [AlAs / 15 cycles for 15 cycles received from the detector 50B. Based on the reflectance spectrum of GaAs], the reflectance spectrum of [AlAs / GaAs] for 15 cycles calculated using the film thickness of AlAs and the thickness of GaAs as parameters, and 15 cycles detected by the detector 50B. The average value of the AlAs film thickness for 15 cycles (= 110.8 nm) and the thickness of the AlAs film for 15 cycles so that the error from the reflectance spectrum of [AlAs / GaAs] is minimized by the least square method. An average value (= 94.4 nm) is obtained.

Then, the control device 60C uses the calculated average AlAs film thickness (= 110.8 nm) and the average film thickness of GaAs (= 94.4 nm) to reflect the [AlAs / GaAs] reflection band for 15 cycles. the central wavelength lambda _MAX calculated by lambda _MAX = 4nd of the center wavelength of the reflection band of [AlAs / GaAs] of 15 periods is detected that the 1290 nm. That is, the control unit 60C includes the n = 2.909 and d = 110.8nm or n = 3.414 and d = 94.4nm by substituting the lambda _MAX = 4nd seek λ _MAX = 1290nm.

  Since the center wavelength of 1290 nm is deviated from the original center wavelength of 1300 nm, the control device 60C determines the film thickness of AlAs and GaAs when stacking [AlAs / GaAs] for the remaining 20 cycles. Calculation is performed by the same method as in the third embodiment.

  In this way, the controller 60C calculates the film thicknesses of AlAs and GaAs for forming the remaining distributed Bragg reflector (DBR) for compensating the reflectance of the distributed Bragg reflector (DBR) (step). S41B).

  Thereafter, steps S42A and S42 to S44 described above are sequentially executed.

  As described above, according to the fourth embodiment, the thin film manufacturing apparatus 100 </ b> C interrupts the crystal growth according to the crystal growth time in the reaction vessel 10, and based on the reflectance spectrum measured at the time of the interruption, the remaining semiconductors Since the target film thickness for control when the layer is crystal-grown is determined, even when the semiconductor layer crystal-grown in the reaction vessel 10 includes a semiconductor layer whose film thickness is difficult to detect, it has the target film thickness. A semiconductor layer can be manufactured.

  In the above description, when 35 cycles of [AlAs / GaAs] are stacked, the crystal growth is interrupted once when 15 cycles of [AlAs / GaAs] are stacked, and the target film thickness for control is corrected. (= Correction of excess film thickness Δd) In the present invention, however, the present invention is not limited to this. When 35 [AlAs / GaAs] layers are stacked, the crystal growth is interrupted twice or more to control You may make it perform correction | amendment of a target film thickness (= correction | amendment of excess film thickness (DELTA) d).

  The rest is the same as in the first and third embodiments.

[Embodiment 5]
FIG. 14 is a schematic diagram showing the configuration of the thin film manufacturing apparatus according to the fifth embodiment. Referring to FIG. 14, thin film manufacturing apparatus 100D according to Embodiment 5 replaces detector 50 of thin film manufacturing apparatus 100 shown in FIG. 1 with detector 50C, replaces control device 60 with control device 60D, and supplies a gas supply source. 75, 76, MFC 85, 86, and valves 95, 96 are added, and the rest is the same as the thin film manufacturing apparatus 100.

  The gas supply source 75 holds trimethylindium (TMI). The gas supply source 76 holds dimethylhydrazine (DMHy). The MFC 85 is provided corresponding to the gas supply 75, and the MFC 86 is provided corresponding to the gas supply source 76. The valve 95 is provided corresponding to the MFC 85, and the valve 96 is provided corresponding to the MFC 86.

  The detector 50C calculates the phase change of the Fabry-Perot vibration when a semiconductor layer having a desired film thickness is grown in the reaction vessel 10 based on the film thickness and composition of the semiconductor layer received from the control device 60D. The calculated phase change is held as the target phase change.

  The detector 50C receives the reflected light from the substrate 90 via the half mirror 40 when the crystal growth of the semiconductor layer is started in the reaction vessel 10, and detects the intensity of the received reflected light. The Fabry-Perot vibration as shown in 3 is detected. Then, the detector 50C sequentially detects the phase change of the Fabry-Perot vibration after the start of the detection of the Fabry-Perot vibration. When the detected phase change reaches the target phase change, the detector 50C generates the stop signal STP3 and supplies it to the control device 60D. Output. The detector 50C otherwise performs the same function as the detector 50.

  Control device 60D generates signals FL5 and FL6 and outputs them to MFCs 85 and 86, respectively. Control device 60D generates signals SE5 and SE6 each having an H level or an L level and outputs the signals to valves 95 and 96, respectively.

  Upon receiving the signal FL5 from the control device 60D, the MFC 85 supplies trimethylindium (TMI) having a flow rate specified by the received signal FL5 to the gas supply port 11 via the valve 95. Upon receiving the signal FL6 from the control device 60D, the MFC 86 supplies dimethylhydrazine (DMHy) having a flow rate specified by the received signal FL6 to the gas supply port 11 via the valve 96.

  The valve 95 is closed in response to the L level signal SE5 from the control device 60D, and is opened in response to the H level signal SE5. The valve 96 is closed in response to an L level signal SE6 from the control device 60D, and is opened in response to an H level signal SE6.

  FIG. 15 is a schematic diagram showing a configuration of a resonator manufactured in the thin film manufacturing apparatus 100D shown in FIG. Referring to FIG. 15, the surface emitting laser element 150 includes distributed Bragg reflectors 102 and 106, resonator spacer layers 103 and 105, and an active layer 104.

  The resonator spacer layers 103 and 105 are formed on both sides of the active layer 104 in contact with the active layer 104. The distributed Bragg reflector 102 is formed in contact with the resonator spacer layer 103, and the distributed Bragg reflector 102 is formed in contact with the resonator spacer layer 105.

The distributed Bragg reflector 102 is composed of [n-Al _0.9 Ga _0.1 As / GaAs] with 35 periods when a pair of n-Al _0.9 Ga _0.1 As / GaAs is paired. Each of the resonator spacer layers 103 and 105 is made of GaAs. The active layer 104 includes a well layer 1041 made of GaInNAs and a barrier layer 1042 made of GaAs. The thickness of the well layer 1041 is 8 nm, and the thickness of the barrier layer 1042 is 18 nm. The active layer 104 has a quantum well structure in which three well layers 1041 and three barrier layers 1042 are alternately stacked. The distributed Bragg reflector 106 is composed of [p-Al _0.9 Ga _0.1 As / GaAs] having 24 periods when a pair of p-Al _0.9 Ga _0.1 As / GaAs is paired.

  In the surface emitting laser element 150, the resonator spacer layers 103 and 105 and the active layer 104 constitute a resonator 130. The resonator 130 has a film thickness corresponding to one wavelength (λ) of the oscillation wavelength λ of the surface emitting laser element 150.

  The thin film manufacturing apparatus 100D manufactures the resonator 130. In this case, the resonator spacers 103 and 105 have a film thickness that can be detected by the detector 50C, and each of the well layer 1041 and the barrier layer 1042 constituting the active layer 104 is thinner than the detection limit by the detector 50C. It has a film thickness.

  Therefore, in the fifth embodiment, when the resonator spacer layers 103 and 105 are crystal-grown, as in the first embodiment, the detector 50C has the film thickness of the crystal-grown resonator spacer layers 103 and 105. When the detected film thickness reaches the control target film thickness, the stop signal STP1 is generated and output to the control device 60D.

  Then, when the active layer 104 composed of the well layer 1041 and the barrier layer 1042 having a film thickness thinner than the detection limit is crystal-grown in the reaction vessel 10, the detector 50C is the same as in the fourth embodiment. When the crystal growth time in the reaction vessel 10 reaches the crystal growth time of the active layer 104, the control signal 60 is generated and output to the control device 60D.

  The detector 50C continues to detect the above-described Fabry-Perot vibration based on the reflected light from the substrate 90 while the resonator spacer layer 103, the active layer 104, and the resonator spacer layer 105 are sequentially crystal-grown. When the phase change after the start of vibration detection reaches the target phase change (= phase change corresponding to one wavelength), the stop signal STP3 is generated and output to the control device 60D.

  FIG. 16 is a flowchart for explaining a method of manufacturing a resonator in thin film manufacturing apparatus 100D shown in FIG. In the description of the flowchart shown in FIG. 16, the control device 60D obtains data including the target film thickness, composition, excess film thickness Δd, and the like of each layer of the resonator spacer layer 103, the active layer 104, and the resonator spacer layer 105. The data is transferred to the detector 50C, and the detector 50C calculates and holds a target phase change (= phase change corresponding to one wavelength) in advance. The detector 50C holds a time for crystal growth of GaInNAs having a thickness of 8 nm and a time for crystal growth of GaAs having a thickness of 18 nm.

Referring to FIG. 16, when a series of operations is started, control device 60D generates H-level signals SE1, SE3, and SE4, and generates generated signals SE1, SE3, and SE4 as valves 91, 93, and 4, respectively. Output to 94. Further, the control device 60D outputs a signal FL1 for flowing a carrier gas having a predetermined flow rate, a signal FL3 for flowing trimethylaluminum (TMA) having a predetermined flow rate, and arsine (AsH ₃ ) having a predetermined flow rate. A signal FL4 for flowing is generated, and the generated signals FL1, FL3, FL4 are output to the MFCs 81, 83, 84, respectively.

The valves 91, 93, and 94 are opened in response to the H level signals SE1, SE3, and SE4, respectively. The MFC 81 supplies a carrier gas having a predetermined flow rate to the gas supply port 11 according to the signal FL1, and the MFC 83 supplies trimethylaluminum (TMA) having a predetermined flow rate to the gas supply port 11 according to the signal FL3. The MFC 84 supplies arsine (AsH ₃ ) having a predetermined flow rate to the gas supply port 11 in response to the signal FL4.

Trimethylgallium (TMA) and arsine (AsH ₃ ) supplied from the gas supply port 11 into the reaction vessel 10 are thermally decomposed on the surface of the substrate 90 heated to a predetermined temperature, and GaAs grows on the substrate 90. Begin to. As a result, crystal growth of the resonator spacer layer 103 made of GaAs is started in the reaction vessel 10. Controller 60 generates signal ST1 in accordance with the output of signals SE1, SE3, SE4, FL1, FL3, and FL4, and outputs the signal ST1 to light source 30 and detector 50C (step S51).

  The light source 30 generates and emits light having a predetermined wavelength in accordance with the signal ST1 from the control device 60. The half mirror 40 transmits the light from the light source 30 as it is, irradiates the substrate 90 via the optical port 13, and guides the reflected light from the substrate 90 to the detector 50C.

  When the detector 50C receives the reflected light from the half mirror 40, the detector 50C detects the intensity of the received reflected light, and based on the detected intensity of the reflected light, the film thickness of the resonator spacer layer 103 is determined by the method described above. Is detected. Thereby, measurement of Fabry-Perot vibration is started. When the thickness of the detected resonator spacer layer 103 reaches the control target film thickness (= target film thickness−excess film thickness Δd), the detector 50C generates a stop signal STP1 and sends it to the control device 60D. The control device 60D generates L level signals SE1, SE3, and SE4 in response to the stop signal STP1 and outputs them to the valves 91, 93, and 94, respectively. The valves 91, 93, and 94 are respectively set to the L level. Are closed in response to the signals SE1, SE3, SE4 (step S52).

Thereafter, control device 60D generates H-level signals SE1, SE3 to SE6 and outputs them to valves 91 and 93 to 96, respectively. The control device 60D also sends a signal FL1 for flowing a carrier gas having a predetermined flow rate, a signal FL3 for flowing trimethylgallium (TMG) having a predetermined flow rate, and arsine (AsH ₃ ) having a predetermined flow rate. Signal FL4, a signal FL5 for flowing trimethylindium (TMI) having a predetermined flow rate, and a signal FL6 for flowing dimethylhydrazine (DMHy) having a predetermined flow rate are generated, and the generated signals FL1, FL3 FL6 is output to MFC 81 and 83 to 86, respectively.

Valves 91 and 93 to 96 are opened in response to H level signals SE1, SE3 to SE6 from control device 60D, respectively. Further, the MFC 81 supplies a carrier gas having a predetermined flow rate to the gas supply port 11 through the valve 91 in response to the signal FL1 from the control device 60D. The MFC 83 supplies trimethylgallium (TMG) having a predetermined flow rate to the gas supply port 11 through the valve 93 in response to the signal FL3 from the control device 60D. The MFC 84 supplies arsine (AsH ₃ ) having a predetermined flow rate to the gas supply port 11 via the valve 94 in response to the signal FL4 from the control device 60D. The MFC 85 supplies trimethylindium (TMI) having a predetermined flow rate to the gas supply port 11 via the valve 95 in response to the signal FL5 from the control device 60D. The MFC 86 supplies dimethylhydrazine (DMHy) having a predetermined flow rate to the gas supply port 11 through the valve 96 in response to the signal FL6 from the control device 60D.

Trimethylgallium (TMA), arsine (AsH ₃ ), trimethylindium (TMI), and dimethylhydrazine (DMHy) supplied from the gas supply port 11 into the reaction vessel 10 are surfaces of the substrate 90 that have been heated to a predetermined temperature. And GaInNAs begins to grow on the substrate 90. Thereby, crystal growth of the well layer 1041 made of GaInNAs is started in the reaction vessel 10.

  When the time measured by the built-in timer reaches the time for crystal growth of GaInNAs having a film thickness of 8 nm, the detector 50C generates a stop signal STP1 and outputs it to the control device 60D. In response to the stop signal STP1 from the detector 50C, the control device 60D generates L level signals SE1, SE3 to SE6 and outputs them to the valves 91 and 93 to 96, respectively, to stop the source gas.

Thereafter, control device 60D generates H-level signals SE1, SE3, and SE4 and outputs them to valves 91, 93, and 94, respectively. Further, the control device 60D allows a signal FL1 for flowing a carrier gas having a predetermined flow rate, a signal FL3 for flowing trimethylgallium (TMG) having a predetermined flow rate, and arsine (AsH ₃ ) having a predetermined flow rate. Signal FL4 is generated, and the generated signals FL1, FL3, FL4 are output to MFCs 81, 83, 84, respectively.

Valves 91, 93, and 94 are opened in response to H level signals SE1, SE3, and SE4 from control device 60D, respectively. Further, the MFC 81 supplies a carrier gas having a predetermined flow rate to the gas supply port 11 through the valve 91 in response to the signal FL1 from the control device 60D. The MFC 83 supplies trimethylgallium (TMG) having a predetermined flow rate to the gas supply port 11 through the valve 93 in response to the signal FL3 from the control device 60D. The MFC 84 supplies arsine (AsH ₃ ) having a predetermined flow rate to the gas supply port 11 via the valve 94 in response to the signal FL4 from the control device 60D.

Trimethylgallium (TMA) and arsine (AsH ₃ ) supplied from the gas supply port 11 into the reaction vessel 10 are thermally decomposed on the surface of the substrate 90 heated to a predetermined temperature, and GaAs grows on the substrate 90. Begin to. As a result, crystal growth of the barrier layer 1042 made of GaAs is started in the reaction vessel 10.

  The detector 50C generates a stop signal STP1 and outputs it to the control device 60D when the time measured by the built-in timer reaches the time for crystal growth of GaAs having a film thickness of 18 nm. The control device 60D generates L level signals SE1, SE3, SE4 in response to the stop signal STP1 from the detector 50C, outputs them to the valves 91, 93, 94, respectively, and stops the source gas.

  The active layer 104 is crystal-grown by repeating the above-described alternately (step S53).

  When the time measured by the built-in timer reaches the crystal growth time of the active layer 104, the detector 50C generates a stop signal STP2 and outputs it to the control device 60D.

The control device 60D stops the source gas for crystal growth of the active layer 104 in response to the stop signal STP2, then generates H level signals SE1, SE3, SE4, and the generated signals SE1, SE3, SE3. SE4 is output to valves 91, 93 and 94, respectively. The control device 60D also outputs a signal FL1 for flowing a carrier gas having a predetermined flow rate, a signal FL3 for flowing trimethylgallium (TMG) having a predetermined flow rate, and arsine (AsH ₃ ) having a predetermined flow rate. A signal FL4 for flowing is generated, and the generated signals FL1, FL3, FL4 are output to the MFCs 81, 83, 84, respectively.

The valves 91, 93, and 94 are opened in response to the H level signals SE1, SE3, and SE4, respectively. The MFC 81 supplies a carrier gas having a predetermined flow rate to the gas supply port 11 according to the signal FL1, and the MFC 83 supplies trimethyl gallium (TMG) having a predetermined flow rate to the gas supply port 11 according to the signal FL3. The MFC 84 supplies arsine (AsH ₃ ) having a predetermined flow rate to the gas supply port 11 in response to the signal FL4.

Trimethylgallium (TMG) and arsine (AsH ₃ ) supplied from the gas supply port 11 into the reaction vessel 10 are thermally decomposed on the surface of the substrate 90 heated to a predetermined temperature, and GaAs grows on the substrate 90. Begin to. Thereby, crystal growth of the resonator spacer layer 105 made of GaAs is started in the reaction vessel 10 (step S54).

  When receiving the reflected light from the half mirror 40, the detector 50C detects the intensity of the received reflected light, and detects Fabry-Perot vibration based on the detected intensity of the reflected light. Then, the detector 50C detects that the phase change of the Fabry-Perot vibration after the start of the detection of the Fabry-Perot vibration reaches the target phase change (= 1 phase change for one wavelength) (Step S55).

  Then, detector 50C generates stop signal STP3 and outputs it to control device 60D, and control device 60D generates L-level signals SE1 to SE6 according to stop signal STP3 and outputs them to valves 91 to 96, respectively. The valves 91 to 96 are closed in response to the L level signals SE1 to SE6, respectively. Thereby, the crystal growth of the resonator spacer layer 105 is completed (step S56). And a series of operation | movement is complete | finished. Note that the detector 50C continues to detect Fabry-Perot vibration from step S52 to step S55.

  As described above, according to the fifth embodiment, the thin film manufacturing apparatus 100D manages the crystal growth in the reaction vessel 10 based on the actually measured film thickness and time, so that the semiconductor layer in which the crystal is grown in the reaction vessel 10 is Even when a semiconductor layer in which actual measurement of film thickness is difficult is included, a laminated structure having a target film thickness can be manufactured.

  Others are the same as in the first embodiment.

[Embodiment 6]
FIG. 17 is a schematic diagram showing a configuration of a thin film manufacturing apparatus according to the sixth embodiment. Referring to FIG. 17, thin film manufacturing apparatus 100E according to Embodiment 6 replaces reaction container 10 of thin film manufacturing apparatus 100 shown in FIG. 1 with reaction container 10A, replaces susceptor 20 with susceptor 21, and deletes half mirror 40. Others are the same as those of the thin film manufacturing apparatus 100.

  The reaction vessel 10A is composed of a vertical reactor and has a gas supply port 11A, an exhaust port 12A, and two optical ports 13A and 13B. The gas supply port 11A is arranged at the upper part of the reaction vessel 10A, the exhaust port 12A is provided at the lower part of the side surface of the reaction vessel 10A, the optical port 13A is arranged at one side of the gas supply port 11A, and the optical port 13B. Is disposed on the other side of the gas supply port 11A.

  The susceptor 21 is disposed in the reaction vessel 10A so that the center thereof substantially coincides with the center of the gas supply port 11A.

  The susceptor 21 supports the substrate 90 on its one main surface 21A. The optical port 13A transmits light emitted from the light source 30 and irradiates the substrate 90 obliquely. The optical port 13 </ b> B transmits the reflected light reflected by the substrate 90 and guides it to the detector 50.

  The thin film manufacturing apparatus 100E supplies the source gas from the upper side of the substrate 90 to the substrate 90, and grows various thin films using the control target film thickness as in the first embodiment.

  The thin film manufacturing apparatus 100E may include any one of the detectors 50A, 50B, and 50C instead of the detector 50, and may include any one of the control apparatuses 60A, 60B, 60C, and 60D instead of the control apparatus 60. Alternatively, the light source 30A may be provided instead of the light source 30.

  And thin film manufacturing apparatus 100E may grow various thin films by the same method as any one of Embodiments 2 to 5.

  In the sixth embodiment, the reaction vessel 10A may have any shape, and includes an optical port for entering light and an optical port for guiding reflected light reflected by the substrate 90 to the detector 50. Any film can be used as long as the film thickness of the semiconductor layer grown in the reaction vessel 10A can be observed in situ.

  Others are the same as those in the first to fifth embodiments.

[Embodiment 7]
FIG. 18 is a schematic diagram showing a configuration of a thin film manufacturing apparatus according to the seventh embodiment. Referring to FIG. 18, in thin film manufacturing apparatus 100F according to Embodiment 7, optical ports 13A and 13B of thin film manufacturing apparatus 100E shown in FIG. 17 are replaced with optical ports 13C, and gas supply port 11A is replaced with gas supply ports 11B and 11C. Instead of this, a half mirror 40 is added, and the rest is the same as the thin film manufacturing apparatus 100E.

  The gas supply ports 11B and 11C and the optical port 13C are disposed on the upper side of the susceptor 21. The optical port 13 </ b> C is arranged so that the center thereof substantially coincides with the center of the susceptor 21. The gas supply port 11B is disposed outside the optical port 13C, and the gas supply port 11C is disposed outside the gas supply port 11B.

  The light source 30 and the half mirror 40 are disposed above the supply ports 11B and 11C and the optical port 13C.

  FIG. 19 is a plan view of the gas supply ports 11B and 11C and the optical port 13C viewed from the light source 30 side shown in FIG. Referring to FIG. 19, the gas supply port 11 </ b> B includes eight holes 1, and the gas supply port 11 </ b> C includes eight holes 2. The eight holes 1 are arranged in a substantially octagon, and the eight holes 2 are also arranged in a substantially octagon.

Referring to FIGS. 18 and 19, the carrier gas is supplied into the reaction vessel 10A through the optical port 13C, and trimethylgallium (TMG), which is a group III metal source gas, is supplied through the gas supply port 11B. Trimethylaluminum (TMA) and arsine (AsH ₃ ), which are supplied into the reaction vessel 10A and are Group V metal source gases, are supplied into the reaction vessel 10A through the gas supply port 11C.

  Thus, in the thin film manufacturing apparatus 100F, the group V metal source gas is supplied into the reaction vessel 10A from the outside of the group III metal source gas. Accordingly, the concentration distribution of the Group III metal material and the concentration distribution of the Group V metal material on the surface of the substrate 90 can be made substantially flat.

In the thin film manufacturing apparatus 100F, trimethylgallium (TMG), which is a group III metal source gas, is supplied into the reaction vessel 10A via the gas supply port 11C, and trimethylaluminum (group V metal source gas) TMA) and arsine (AsH ₃ ) may be supplied into the reaction vessel 10A via the gas supply port 11B.

  The thin film manufacturing apparatus 100F may include any one of the detectors 50A, 50B, and 50C instead of the detector 50, and replaces the control apparatus 60 with any one of the control apparatuses 60A, 60B, 60C, and 60D. The light source 30 </ b> A may be provided instead of the light source 30.

  And the thin film manufacturing apparatus 100F may grow various thin films by the same method as any one of Embodiment 2-5.

  Others are the same as those in the first to fifth embodiments.

[Embodiment 8]
FIG. 20 is a schematic diagram showing a configuration of a thin film manufacturing apparatus according to the eighth embodiment. Referring to FIG. 20, thin film manufacturing apparatus 100G according to the eighth embodiment uses light source 30, detector 50 and control device 60 of thin film manufacturing apparatus 100 shown in FIG. 1 as light source 30B, detector 50D and control apparatus 60E, respectively. The other parts are the same as those of the thin film manufacturing apparatus 100.

  The light source 30B includes the two light sources 30 and 30A described above, and selectively functions as the light source 30 or the light source 30A. The detector 50D includes the four detectors 50, 50A, 50B, and 50C described above, and functions as one detector selected from the four detectors 50, 50A, 50B, and 50C. The control device 60E includes the five control devices 60, 60A, 60B, 60C, and 60D described above, and functions as one control device selected from the five control devices 60, 60A, 60B, 60C, and 60D.

  In this case, when the detector 50D functions as the detector 50, the control device 60E functions as the control device 60, and the light source 30B functions as the light source 30. That is, the thin film manufacturing apparatus 100G functions as the thin film manufacturing apparatus 100 (see FIG. 1).

  When the detector 50D functions as the detector 50A, the control device 60E functions as the control device 60A or the control device 60B, and the light source 30B functions as the light source 30. That is, the thin film manufacturing apparatus 100G functions as the thin film manufacturing apparatus 100A (see FIG. 7) or the thin film manufacturing apparatus 100B (see FIG. 9).

  Further, when the detector 50D functions as the detector 50B, the control device 60E functions as the control device 60C, and the light source 30B functions as the light source 30A. That is, the thin film manufacturing apparatus 100G functions as the thin film manufacturing apparatus 100C (see FIG. 12).

  Furthermore, when the detector 50D functions as the detector 50C, the control device 60D functions as the control device 60D, and the light source 30B functions as the light source 30. That is, the thin film manufacturing apparatus 100G functions as the thin film manufacturing apparatus 100D (see FIG. 14).

  Thus, the thin film manufacturing apparatus 100G has all the functions of the thin film manufacturing apparatuses 100, 100A, 100B, 100C, and 100D according to the first to fifth embodiments described above, and is crystal-grown in the reaction vessel 10. Depending on the type of the semiconductor layer, the thin film manufacturing apparatus 100, 100A, 100B, 100C, or 100D functions as one thin film manufacturing apparatus.

Hereinafter, a case where the thin film manufacturing apparatus 100G manufactures a surface emitting laser element will be described. FIG. 21 is a cross-sectional view showing a configuration of a surface emitting laser element manufactured by the thin film manufacturing apparatus 100G shown in FIG. Referring to FIG. 21, a surface emitting laser element 150 includes a substrate 101, distributed Bragg reflectors 102 and 106, resonator spacer layers 103 and 105, an active layer 104, a selective oxidation layer 107, and a contact layer 108. A SiO ₂ layer 109, an insulating resin layer 111, a p-side electrode 112, and an n-side electrode 113.

The substrate 101 is made of n-GaAs. The distributed Bragg reflector 102 has 35 cycles of [n-Al _0.9 Ga _0.1 As / n-GaAs when the n-Al _0.9 Ga _0.1 As / n-GaAs pair is taken as one cycle. And is formed on one main surface of the substrate 101. The thickness of each of the n-Al _0.9 Ga _0.1 As / n-GaAs is λ / 4n (n is the refractive index of each semiconductor layer when the oscillation wavelength of the surface emitting laser element 150 is λ). ).

  The resonator spacer layer 103 is made of non-doped GaAs and is formed on the distributed Bragg reflector 102. The active layer 104 has a quantum well structure including a well layer made of GaInNAs and a barrier layer made of GaAs, and is formed on the resonator spacer layer 103.

The resonator spacer layer 105 is made of non-doped GaAs and is formed on the active layer 104. The distributed Bragg reflector 106 has a period of 24 [p-Al _0.9 Ga _0.1 As / p-GaAs when a pair of p-Al _0.9 Ga _0.1 As / p-GaAs is taken as one period. And is formed on the resonator spacer layer 105. The thickness of each of p-Al _0.9 Ga _0.1 As / p-GaAs is λ / 4n (n is the refractive index of each semiconductor layer).

  The selective oxidation layer 107 is made of p-AlAs and is provided in the distributed Bragg reflector 106. The selective oxidation layer 107 includes a non-oxidized region 107a and an oxidized region 107b, and has a thickness of 20 nm.

The contact layer 108 is made of p-GaAs and is formed on the distributed Bragg reflector 106. The SiO ₂ layer 109 includes one main surface of a part of the distributed Bragg reflector 102, the resonator spacer layer 103, the active layer 104, the resonator spacer layer 105, the distributed Bragg reflector 106, the selective oxidation layer 107, and the contact layer 108. It is formed so as to cover the end surface of.

The insulating resin 110 is formed in contact with the SiO ₂ layer 109. The p-side electrode 111 is formed on part of the contact layer 108 and the insulating resin 110. The n-side electrode 112 is formed on the back surface of the substrate 101.

  Each of the distributed Bragg reflectors 102 and 106 constitutes a semiconductor distributed Bragg reflector that reflects the oscillation light oscillated in the active layer 104 by Bragg multiple reflection and confines it in the active layer 104.

  The oxidized region 107b has a smaller refractive index than the non-oxidized region 107a. The oxidized region 107b constitutes a current confinement part that restricts the path through which the current injected from the p-side electrode 111 flows to the active layer 104 to the non-oxidized region 107a, and also oscillates the oscillation light oscillated in the active layer 104. Confine in the region 107a. Thus, the surface emitting laser element 150 can oscillate with a low threshold current.

FIG. 22 is a sectional view showing the vicinity of the active layer 104 of the surface emitting laser element 150 shown in FIG. Referring to FIG. 22, distributed Bragg reflector 102 includes a low refractive index layer 1021, a high refractive index layer 1022, and a composition gradient layer 1023. The low refractive index layer 1021 is made of n-Al _0.9 Ga _0.1 As, and the high refractive index layer 1022 is made of n-GaAs. The composition gradient layer 1023 is made of n-AlGaAs in which the Al composition gradually changes from one of the low refractive index layer 1021 and the high refractive index layer 1022 to the other. The low refractive index layer 1021 is in contact with the resonator spacer layer 103.

The distributed Bragg reflector 106 includes a low refractive index layer 1061, a high refractive index layer 1062, and a composition gradient layer 1063. The low refractive index layer 1061 is made of p-Al _0.9 Ga _0.1 As, and the high refractive index layer 1062 is made of p-GaAs. The composition gradient layer 1063 is made of p-AlGaAs in which the Al composition gradually changes from one of the low refractive index layer 1061 and the high refractive index layer 1062 to the other. The low refractive index layer 1061 is in contact with the resonator spacer layer 105.

  The active layer 104 has a quantum well structure in which three well layers 1041 each made of GaInNAs and four barrier layers 1042 each made of GaAs are alternately stacked. The barrier layer 1042 is in contact with the resonator spacer layers 103 and 105.

  In the surface emitting laser element 150, the resonator spacer layers 103 and 105 and the active layer 104 constitute a resonator, and the thickness of the resonator in the direction perpendicular to the substrate 101 is one wavelength of the surface emitting laser element 1 ( = Λ). That is, the resonator spacer layers 103 and 105 and the active layer 104 constitute a one-wavelength resonator.

  23, 24, and 25 are first to third process diagrams showing a method for manufacturing the surface-emitting laser element 150 shown in FIG. 21, respectively. Referring to FIG. 23, when a series of operations is started, the reflective layer 102, the resonator spacer layer 103, the active layer 104, the resonator spacer layer 105, the reflective layer 106, and the selective oxidation layer 107 are used using the MOCVD method. , And the contact layer 108 are sequentially stacked on the substrate 101 (see step (a) in FIG. 23).

In this case, n-Al _0.9 Ga _0.1 As and n-GaAs of the reflective layer 102 are replaced with trimethylaluminum (TMA), trimethylgallium (TMG), arsine (AsH ₃ ), and hydrogen selenide (H ₂ Se). Form as a raw material.

Further, non-doped GaAs of the resonator spacer layer 103 is formed using trimethyl gallium (TMG) and arsine (AsH ₃ ) as raw materials, and GaInNAs of the active layer 104 is formed of trimethyl gallium (TMG), trimethyl indium (TMI), trimethyl hydrazine (DMHy). ) And arsine (AsH ₃ ) as raw materials, and GaAs of the active layer 104 is formed using trimethyl gallium (TMG) and arsine (AsH ₃ ) as raw materials.

Further, non-doped GaAs of the resonator spacer layer 105 is formed using trimethyl gallium (TMG) and arsine (AsH ₃ ) as raw materials, and p-Al _0.9 Ga _0.1 As / GaAs of the reflective layer 106 is formed of trimethylaluminum (TMA). ), Trimethylgallium (TMG), arsine (AsH ₃ ) and carbon tetrabromide (CBr ₄ ).

Further, p-AlAs for the selective oxidation layer 107 is formed using trimethylaluminum (TMA), arsine (AsH ₃ ), and carbon tetrabromide (CBr ₄ ) as raw materials, and p-GaAs for the contact layer 108 is trimethylgallium (TMG). , Arsine (AsH ₃ ) and carbon tetrabromide (CBr ₄ ).

  Thereafter, a resist is applied on the contact layer 108, and a resist pattern 120 is formed on the contact layer 108 using a photoengraving technique (see step (b) in FIG. 23). In this case, the resist pattern 120 has a square shape with one side of 20 μm.

  When the resist pattern 120 is formed, a part of the distributed Bragg reflector 102, the resonator spacer layer 103, the active layer 104, the resonator spacer layer 105, the reflective layer 106, and the selection are selected using the formed resist pattern 120 as a mask. The peripheral portions of the oxide layer 107 and the contact layer 108 are removed by dry etching, and the resist pattern 120 is further removed (see step (c) in FIG. 23).

  Next, referring to FIG. 24, after step (c) shown in FIG. 23, the sample is heated to 425 ° C. in an atmosphere in which water heated to 85 ° C. is bubbled with nitrogen gas, and the selective oxidation layer 107. Is oxidized from the outer peripheral portion toward the central portion to form a non-oxidized region 107a and an oxidized region 107b in the selective oxidation layer 107 (see step (d) in FIG. 24). In this case, the non-oxidized region 107a is formed of a square having a side of 4 μm.

Thereafter, a SiO ₂ layer 109 is formed on the entire surface of the sample by using a chemical vapor deposition (CVD) method, and a region serving as a light emitting portion and a surrounding SiO ₂ layer using a photoengraving technique. 109 is removed (see step (e) in FIG. 24).

  Next, the insulating resin 110 is applied to the entire sample by spin coating, and the insulating resin 110 on the region to be the light emitting portion is removed (see step (f) in FIG. 24).

  Referring to FIG. 25, after forming insulating resin 110, a resist pattern having a side of 8 μm is formed on a region to be a light emitting portion, and a p-side electrode material is formed by vapor deposition on the entire surface of the sample. The p-side electrode material on the resist pattern is removed by lift-off to form the p-side electrode 111 (see step (g) in FIG. 25). Then, the back surface of the substrate 101 is polished, the n-side electrode 112 is formed on the back surface of the substrate 101, and further annealed to obtain ohmic conduction between the p-side electrode 111 and the n-side electrode 112 (step (h) in FIG. 25). reference). Thus, the surface emitting laser element 150 is manufactured.

  When the surface emitting laser element 150 is manufactured, the thin film manufacturing apparatus 100G uses the distributed Bragg reflector 102, the resonator spacer layer 103, the active layer 104, the resonator spacer layer 105, and the distributed Bragg in step (a) of FIG. A reflector 106, a selective oxidation layer 107, and a contact layer 108 are sequentially stacked.

  When the thin film manufacturing apparatus 100G grows the crystals of the distributed Bragg reflectors 102 and 106, the thin film manufacturing apparatus 100A according to the second embodiment, the thin film manufacturing apparatus 100B according to the third embodiment, and the thin film manufacturing apparatus 100C according to the fourth embodiment. The distributed Bragg reflector 102 is grown as a crystal.

  Further, when the thin film manufacturing apparatus 100G grows the crystal of the resonator spacer layers 103 and 105, the thin film manufacturing apparatus 100G functions as the thin film manufacturing apparatus 100 according to the first embodiment to grow the crystal of the resonator spacer layers 103 and 105.

  Furthermore, when the active layer 104 is crystal-grown, the thin film manufacturing apparatus 100G functions as the thin film manufacturing apparatus 100D according to the fifth embodiment to grow the active layer 104.

  Further, when the selective oxidation layer 107 and the contact layer 108 are crystal-grown, the thin film manufacturing apparatus 100G functions as the thin film manufacturing apparatus 100 according to the first embodiment, and the selective oxidation layer 107 and the contact layer 108 are crystal-grown.

  In this case, the thin film manufacturing apparatus 100G functions as one of the thin film manufacturing apparatus 100A according to the second embodiment, the thin film manufacturing apparatus 100B according to the third embodiment, and the thin film manufacturing apparatus 100C according to the fourth embodiment, and the distributed Bragg reflector 102. , 106 are crystal grown according to any one of the flowchart shown in FIG. 8, the flowchart shown in FIG. 11, and the flowchart shown in FIG.

  Further, when the thin film manufacturing apparatus 100G functions as the thin film manufacturing apparatus 100 according to the first embodiment to grow the crystal of the resonator spacer layers 103 and 105, the thin film manufacturing apparatus 100G grows the resonator spacer layers 103 and 105 according to the flowchart shown in FIG. To do.

  Furthermore, when the thin film manufacturing apparatus 100G functions as the thin film manufacturing apparatus 100D according to the fifth embodiment to grow the active layer 104, the active layer 104 is grown according to the flowchart shown in FIG.

  Furthermore, when the thin film manufacturing apparatus 100G functions as the thin film manufacturing apparatus 100 according to the first embodiment to grow crystals of the selective oxide layer 107 and the contact layer 108, the thin film manufacturing apparatus 100G displays the selective oxide layer 107 and the contact layer 108 according to the flowchart shown in FIG. Crystal grows.

  According to the eighth embodiment, a semiconductor layer having a desired film thickness is grown based on the actually measured film thickness of the semiconductor layer grown in the reaction vessel 10 or the crystal growth time of the semiconductor layer. Even when a thin semiconductor layer that is difficult to measure is included, a semiconductor layer having a desired film thickness can be manufactured.

  In the above description, the surface emitting laser element 150 is manufactured by using the thin film manufacturing apparatus 100G. However, the present invention is not limited to this, and various devices and various types are manufactured by using the thin film manufacturing apparatus 100G. A semiconductor thin film may be manufactured and not only a semiconductor thin film but various thin films other than a semiconductor thin film may be manufactured.

  Further, the thin film manufacturing apparatus 100G may include a reaction vessel 10A instead of the reaction vessel 10.

  Further, in the above description, it has been described that the film thickness of the semiconductor layer grown by detecting Fabry-Perot vibration is detected. However, in the present invention, what is the method for detecting the film thickness of the semiconductor layer? Also good.

  Further, each of the flowcharts shown in FIGS. 5, 6, 8, 11, 13, and 16 constitutes a “film thickness control method” according to the present invention.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is shown not by the above description of the embodiments but by the scope of claims for patent, and is intended to include meanings equivalent to the scope of claims for patent and all modifications within the scope.

  The present invention is applied to a thin film manufacturing apparatus capable of manufacturing a thin film having a target film thickness. Moreover, this invention is applied to the thin film manufacturing method which can manufacture the thin film which has target film thickness. Furthermore, the present invention is applied to a film thickness control method capable of controlling the film thickness of a thin film to a target film thickness.

It is the schematic which shows the structure of the thin film manufacturing apparatus by Embodiment 1 of this invention. It is a timing chart of the film thickness of a signal and a semiconductor layer. It is a conceptual diagram of Fabry-Perot vibration. It is a conceptual diagram for demonstrating the method to determine the target film thickness on control. It is a flowchart for demonstrating the manufacturing method of the thin film in the thin film manufacturing apparatus shown in FIG. It is a flowchart for demonstrating the manufacturing method of the distributed Bragg reflector in the thin film manufacturing apparatus shown in FIG. It is the schematic which shows the structure of the thin film manufacturing apparatus by Embodiment 2. FIG. It is a flowchart for demonstrating the manufacturing method of the distributed Bragg reflector in the thin film manufacturing apparatus shown in FIG. It is the schematic which shows the structure of the thin film manufacturing apparatus by Embodiment 3. FIG. It is a figure which shows a reflectance spectrum. It is a flowchart for demonstrating the manufacturing method of the distributed Bragg reflector in the thin film manufacturing apparatus shown in FIG. It is the schematic which shows the structure of the thin film manufacturing apparatus by Embodiment 4. It is a flowchart for demonstrating the manufacturing method of the distributed Bragg reflector in the thin film manufacturing apparatus shown in FIG. It is the schematic which shows the structure of the thin film manufacturing apparatus by Embodiment 5. FIG. It is the schematic which shows the structure of the resonator manufactured in the thin film manufacturing apparatus shown in FIG. It is a flowchart for demonstrating the manufacturing method of the resonator in the thin film manufacturing apparatus shown in FIG. It is the schematic which shows the structure of the thin film manufacturing apparatus by Embodiment 6. It is the schematic which shows the structure of the thin film manufacturing apparatus by Embodiment 7. FIG. It is a top view of the gas supply port and optical port which were seen from the light source side shown in FIG. It is the schematic which shows the structure of the thin film manufacturing apparatus by Embodiment 8. FIG. It is sectional drawing which shows the structure of the surface emitting laser element which the thin film manufacturing apparatus shown in FIG. 20 manufactures. It is sectional drawing which shows the vicinity of the active layer of the surface emitting laser element shown in FIG. FIG. 22 is a first process diagram showing a method of manufacturing the surface emitting laser element shown in FIG. 21. FIG. 22 is a second process diagram illustrating a method of manufacturing the surface emitting laser element illustrated in FIG. 21. FIG. 22 is a third process diagram illustrating a method of manufacturing the surface emitting laser element illustrated in FIG. 21.

Explanation of symbols

1, 2 holes, 10, 10A reaction vessel, 11, 11A, 11B, 11C gas supply port, 12, 12A exhaust port, 13, 13A, 13B, 13C optical port, 20, 21 susceptor, 20A slope, 21A one main surface , 30 light source, 40 half mirror, 50, 50A, 50B, 50C, 50D detector, 60, 60A, 60B, 60C, 60D, 60E control device, 71-76 gas supply source, 81-86 mass flow controller, 90, 101 Substrate, 91-96 valve, 100, 100A, 100B, 100C, 100D, 100E, 100F, 100G Thin film manufacturing equipment, 102, 106 Distributed Bragg reflector, 103, 105 Resonator spacer layer, 107 Selective oxidation layer, 107a Non-oxidation Region, 107b oxidation region, 108 contact layer, 109 SiO ₂ layer, 110 insulating resin, 111 p-side electrode, 112 n-side electrode, 120 resist pattern, 130 resonator, 150 surface emitting laser element, 1021, 1061 low refractive index layer, 1022, 1062 high refractive index layer, 1033, 1063 composition gradient Layer, 1041 well layer, 1042 barrier layer.

Claims (31)

A reaction vessel for growing a thin film;
Supply means for supplying a raw material for growing the thin film to the reaction vessel;
Detection means for detecting the film thickness of the thin film grown in the reaction vessel using Fabry-Perot vibration ;
Control means for generating a stop signal for stopping the supply of the raw material to the reaction vessel when the film thickness detected by the detection means reaches a control target film thickness that is thinner than the target film thickness by an excess film thickness When,
In response to the stop signal from the control means, the stop means for stopping the supply of the raw material to the reaction vessel,
The excess film thickness grows from the first timing when the supply of the raw material to the reaction vessel is stopped to the second timing when the growth of the thin film is actually stopped in the reaction vessel. Ri film thickness der of the thin film,
A cycle comprising the supply of the raw material by the supply means, the detection of the film thickness by the detection means, the generation of the stop signal by the control means, and the supply stop of the raw material by the stop means is performed a plurality of times,
The control means calculates the control target film thickness that is a reference for generating the first stop signal by using the excessive film thickness measured in advance, and calculates the stop signal for the second and subsequent times. A thin film manufacturing apparatus that calculates the control target film thickness that is a reference for generation using the corrected excessive film thickness that is the excessive film thickness corrected using the film thickness detected by the detecting unit . The thin film comprises a laminated film in which a plurality of layers having different materials and / or compositions are laminated,
The detection means detects the film thickness of the one layer by optical measurement every time one of the plurality of layers grows,
2. The thin film manufacturing apparatus according to claim 1 , wherein the control unit corrects an excessive film thickness of the one layer each time the film thickness of the one layer is detected by the detection unit. The thin film comprises a laminated film in which a plurality of layers having different materials and / or compositions are alternately laminated in a target number of layers,
The detection means detects the film thickness of the one layer by optical measurement every time one of the plurality of layers grows,
The control means has a film thickness of each layer detected by the detection means as an average value of excess film thicknesses in each layer of the plurality of layers when the laminated film is laminated by a predetermined number less than the target number of laminated layers. The thin film manufacturing apparatus according to claim 1 , wherein the excess film thickness of each layer is corrected using the calculated average value. The thin film manufacturing apparatus according to any one of claims 1 to 3 , wherein the detection unit detects a film thickness of the thin film by measuring a change in reflectance of the thin film at an arbitrary wavelength. The supply means supplies the raw material to the reaction vessel by opening a valve,
It said stop means stops the supply to the reaction vessel of the raw material by closing the valve, a thin film production apparatus according to any one of claims 1 to 4. The thin film is formed by alternately stacking a first crystal semiconductor layer having a first refractive index and a second crystal semiconductor layer having a second refractive index different from the first refractive index by a target period. It consists of a multilayer film,
From the first target film thickness, the first film thickness, which is the film thickness of the first crystal semiconductor layer detected by the detection means, is a target film thickness of the first crystal semiconductor layer. A first stop signal is generated when the first target film thickness on the control is reduced by a first excess film thickness that is an excess film thickness of the first crystal semiconductor layer, and the detection means detects the first stop signal. The second film thickness, which is the film thickness of the second crystal semiconductor layer, is an excess film thickness of the second crystal semiconductor layer from the second target film thickness, which is the target film thickness of the second crystal semiconductor layer. A second stop signal is generated when the second target film thickness on the control thin by the second excess film thickness is reached, and a third stop signal is generated when the cycle number of the multilayer film reaches the target cycle number. Generate
The stop means stops the supply of the first raw material to the reaction vessel in response to the first stop signal from the control means, and the stop means in response to the second stop signal from the control means Stopping the supply of the second raw material to the reaction vessel, and stopping the supply of the first and second raw materials to the reaction vessel in response to the third stop signal from the control means,
The supply means supplies the second raw material to the reaction vessel in response to the first stop signal from the control means, and the first raw material in response to the second stop signal from the control means. The thin film manufacturing apparatus of Claim 1 which supplies a raw material to the said reaction container. The control means uses the first and second film thicknesses detected by the detection means when the multilayer film is laminated by a predetermined number of cycles less than the target number of cycles. The first and second corrected excess film thicknesses are respectively calculated by correcting the excess film thicknesses of the first and second corrected excess film thicknesses, and the first and second control overthresholds are respectively calculated using the calculated first and second corrected excess film thicknesses. The target film thickness is calculated, and the first film thickness detected by the detection means when the multilayer film is laminated more than the predetermined number of cycles becomes the calculated first target film thickness for control. The first stop signal is generated when it reaches, and the second stop signal is generated when the second film thickness detected by the detection means reaches the calculated second target film thickness on the control, The thin film manufacturing apparatus according to claim 6 . When the multilayer film is laminated by a predetermined number of cycles less than the target number of cycles, the detecting means detects an intermediate film thickness that is the thickness of the multilayer film for the predetermined cycle,
When the multilayer film is stacked for the predetermined number of cycles, the control unit is configured to perform the first operation when the multilayer film is stacked for the predetermined number of cycles based on the intermediate film thickness detected by the detection unit. The first average value and the second average value of the second film thickness are calculated, and the first and second excess film thicknesses are calculated using the calculated first and second average values. And the first and second corrected excess film thicknesses are calculated, respectively, and the first and second target film thicknesses on the control are respectively calculated using the calculated first and second corrected excess film thicknesses. When the first film thickness detected by the detection means reaches the calculated first target film thickness on the control when the multilayer film is laminated more than the predetermined number of cycles, The second film that generates the stop signal of 1 and is detected by the detection means There generating the second stop signal to reach the second target film thickness on control mentioned above calculation, a thin film manufacturing apparatus according to claim 6. The control means calculates the first and second corrected excess film thicknesses so that the peak wavelength of the reflectance of the multilayer film when the multilayer film is stacked for the target number of cycles becomes a target wavelength. The thin film manufacturing apparatus according to claim 7 or 8 . Wherein each of the first and second crystal semiconductor layer is made of a compound semiconductor, a thin film manufacturing apparatus according to any one of claims 9 claim 6. The multilayer film may constitute a distributed Bragg reflector disposed on both sides of the active layer of the surface-emitting laser element, a thin film manufacturing apparatus according to any one of claims 10 claim 6. The thin film is
A first thin film having a film thickness equal to or greater than a detection limit of the film thickness by the detection means;
Including a second thin film having a film thickness thinner than a detection limit of the film thickness by the detection means,
The detection means irradiates the thin film with light having an arbitrary wavelength, detects reflected light from the thin film of the irradiated light,
2. The thin film manufacturing apparatus according to claim 1, wherein the control unit generates the stop signal when a phase change amount of reflected light from the detection unit reaches a target phase change amount corresponding to a target film thickness of the entire thin film. . The first thin film is
A first crystalline semiconductor layer disposed on one side of the active layer of the surface emitting laser element;
A second crystalline semiconductor layer disposed on the opposite side of the first crystalline semiconductor layer around the active layer,
The second thin film is
A plurality of third crystal semiconductor layers each constituting a quantum well layer included in the active layer;
A plurality of fourth crystal semiconductor layers each constituting a barrier layer included in the active layer,
The plurality of third crystal semiconductor layers are alternately stacked with the plurality of fourth crystal semiconductor layers,
The thin film manufacturing apparatus according to claim 12 , wherein the plurality of third and fourth crystal semiconductor layers are disposed between the first and second crystal semiconductor layers. Said first crystal semiconductor layer, the second crystalline semiconductor layer, wherein each of the plurality of third crystalline semiconductor layer and the plurality of fourth crystal semiconductor layer is made of a compound semiconductor, according to claim 13 Thin film manufacturing equipment. The reaction vessel has a raw material supply unit,
The detection means detects the film thickness of the thin film through an optical port provided at a substantially central part of the raw material supply unit,
Said supply means, said supply from the periphery of the optical port said feedstock into said reaction vessel, a thin film manufacturing apparatus according to any one of claims 14 claim 1. A first step in which a supply means supplies a raw material for growing a thin film to the reaction vessel;
A second step in which the detecting means detects the film thickness of the thin film grown in the reaction vessel using Fabry-Perot vibration ;
A third step of stopping supply of the raw material to the reaction vessel when the detected film thickness reaches the control target film thickness that is thinner than the target film thickness by an excess film thickness;
The excess thickness, Ri thickness der of the thin films actually grown in the reaction vessel after the supply to the reaction vessel of the material is stopped,
The third step includes a first sub-step in which the calculation means subtracts the excess film thickness from the target film thickness to calculate the control target film thickness, and the generation means includes the detected film thickness. A second sub-step for generating a stop signal when the calculated target film thickness for control is reached, and the stop means stops the supply of the raw material to the reaction vessel according to the generated stop signal A third sub-step for correcting the excess film thickness using the film thickness detected by the detection means, and generating a corrected excess film thickness that is an excess film thickness after the correction. Including sub-steps,
The cycle consisting of the first, second and third steps is performed a plurality of times,
In the first sub-step of the first time, the calculating means calculates the target film thickness in the control using the excessive film thickness actually measured in advance, and in the first sub-step after the second time, It calculates a target thickness on the control using the correction excess thickness, the thin film manufacturing method. The thin film comprises a laminated film in which a plurality of layers having different materials and / or compositions are laminated,
The detecting means detects the film thickness of the one layer by optical measurement every time one of the plurality of layers grows in the second step,
17. The thin film according to claim 16 , wherein the correction unit corrects an excess film thickness of the one layer each time the film thickness of the one layer is detected by the detection unit in the fourth sub-step. Production method. The thin film comprises a laminated film in which a plurality of layers having different materials and / or compositions are alternately laminated in a target number of layers,
The detecting means detects the film thickness of the one layer by optical measurement every time one of the plurality of layers grows in the second step,
In the fourth sub-step, the correcting means detects an average value of excess film thicknesses in each layer of the plurality of layers when the laminated film is laminated by a predetermined number of laminated layers smaller than the target number of laminated layers. The thin film manufacturing method according to claim 16 , wherein the film thickness is calculated using the film thickness of each layer detected by the step, and the excessive thickness of each layer is corrected using the calculated average value. Said detecting means is in said second step, by measuring a change in reflectance of the thin film at any wavelength for detecting the thickness of the thin film, according to any one of claims 18 claim 16 Thin film manufacturing method. The supply means supplies the raw material to the reaction vessel by opening a valve in the first step,
Said stop means is in the third step, to stop the supply to the reaction vessel of the raw material by closing the valve, thin film manufacturing method according to any one of claims 19 claim 16. The thin film is formed by alternately stacking a first crystal semiconductor layer having a first refractive index and a second crystal semiconductor layer having a second refractive index different from the first refractive index by a target period. It consists of a multilayer film,
The first step includes
A first sub-step in which the supply means supplies a first raw material for crystal growth of the first crystalline semiconductor layer to the reaction vessel;
A second sub-step in which the supply means supplies a second raw material for crystal growth of the second crystalline semiconductor layer to the reaction vessel;
A third sub-step in which the supply means supplies the second raw material to the reaction vessel when the supply of the first raw material to the reaction vessel is stopped;
The supply means includes a fourth sub-step of supplying the first raw material to the reaction vessel when the supply of the second raw material to the reaction vessel is stopped;
The second step includes
A fifth sub-step in which the detection means detects a first film thickness of the one first crystal semiconductor layer at an arbitrary timing during crystal growth of the multilayer film;
A sixth sub-step in which the detecting means detects a second film thickness of the one second crystal semiconductor layer at the arbitrary timing;
The third step includes
The calculating means subtracts a first excess film thickness that is an excess film thickness of the first crystal semiconductor layer from a first target film thickness that is a target film thickness of the first crystal semiconductor layer, and performs the above control. A seventh sub-step for calculating a first target film thickness;
The calculation means subtracts a second excess film thickness that is an excess film thickness of the second crystal semiconductor layer from a second target film thickness that is a target film thickness of the second crystal semiconductor layer. An eighth sub-step for calculating the second target film thickness of
A ninth sub-step for generating a first stop signal when the generated first film thickness reaches the calculated first target film thickness on the control;
A tenth sub-step in which the generating means generates a second stop signal when the detected second film thickness reaches the calculated control second target film thickness;
An eleventh substep in which the generating means generates a third stop signal when the number of periods of the multilayer film reaches the target number of periods;
A twelfth sub-step in which the stopping means stops the supply of the first raw material to the reaction vessel in response to the generated first stop signal;
A thirteenth sub-step in which the stopping means stops the supply of the second raw material to the reaction vessel in response to the generated second stop signal;
17. The thin film according to claim 16 , wherein the stopping means includes a fourteenth sub-step of stopping supply of the first and second raw materials to the reaction vessel in response to the generated third stop signal. Production method. The seventh sub-step includes
A correcting unit correcting the first excessive film thickness at the arbitrary timing using the detected first film thickness to generate a first corrected excessive film thickness; and
Calculating the first target film thickness on the control by subtracting the first corrected excess film thickness from the first target film thickness,
The eighth sub-step includes
A correcting unit correcting the second excessive film thickness at the arbitrary timing using the detected second film thickness to generate a second corrected excessive film thickness;
The calculating means subtracting the second corrected excess film thickness from the second target film thickness to calculate a second target film thickness on the control,
In the ninth sub-step, the generating means sets the detected first film thickness when the multilayer film is laminated more than the predetermined number of cycles to the first control target calculated. When the film thickness is reached, a first stop signal is generated,
In the tenth sub-step, the generation means generates a second control target that the second film thickness detected when the multilayer film is stacked more than the predetermined number of cycles is calculated. The thin film manufacturing method according to claim 21 , wherein a second stop signal is generated when the film thickness is reached. In the step of generating the first corrected excess film thickness, the correction means is configured such that the peak wavelength of the reflectance of the multilayer film when the multilayer film is stacked for the target number of cycles becomes a target wavelength. In the step of generating the first corrected excessive film thickness and the step of generating the second corrected excessive film thickness, the peak wavelength of the reflectance of the multilayer film when the multilayer film is stacked by the target number of cycles is The thin film manufacturing method according to claim 22 , wherein the second corrected excess film thickness is generated so as to be a target wavelength. The thin film is formed by alternately stacking a first crystal semiconductor layer having a first refractive index and a second crystal semiconductor layer having a second refractive index different from the first refractive index by a target period. It consists of a multilayer film,
The first step includes
A first sub-step in which the supply means supplies a first raw material for crystal growth of the first crystalline semiconductor layer to the reaction vessel;
A second sub-step in which the supply means supplies a second raw material for crystal growth of the second crystalline semiconductor layer to the reaction vessel;
A third sub-step in which the supply means supplies the second raw material to the reaction vessel when the supply of the first raw material to the reaction vessel is stopped;
The supply means includes a fourth sub-step of supplying the first raw material to the reaction vessel when the supply of the second raw material to the reaction vessel is stopped;
In the second step, the detecting means detects the intermediate film thickness of the multilayer film when the multilayer film grows by a predetermined number of cycles less than the target number of cycles,
The third step includes
Based on the intermediate film thickness detected by the computing means, the first average value of the first film thickness of the first crystalline semiconductor layer when the multilayer film has grown by the predetermined number of cycles and the first film thickness A fifth substep for calculating a second average value of the second film thickness of the second crystalline semiconductor layer;
The correcting means corrects the first excessive film thickness that is the excessive film thickness of the first crystalline semiconductor layer by using the calculated first average value, and calculates the first corrected excessive film thickness. 6 sub-steps;
The correction means calculates a second corrected excessive film thickness by correcting a second excessive film thickness that is an excessive film thickness of the second crystalline semiconductor layer using the calculated second average value. A seventh sub-step;
An eighth sub-step in which the calculating means calculates the first target film thickness on the control by subtracting the first corrected excess film thickness from the first target film thickness;
A ninth sub-step in which the calculating means calculates the second target film thickness on the control by subtracting the second corrected excess film thickness from the second target film thickness;
When the generation means reaches the first target film thickness on the calculated control when the first film thickness detected by the detection means when the multilayer film has grown more than the predetermined number of cycles. A tenth sub-step for generating a first stop signal;
When the generation means reaches the calculated second target film thickness on the control when the multilayer film is grown more than the predetermined number of cycles, the generation means 2nd An eleventh sub-step for generating a stop signal of
A twelfth sub-step in which the generating means generates a third stop signal when the number of periods of the multilayer film reaches the target number of periods;
A thirteenth sub-step in which the stopping means stops the supply of the first raw material to the reaction vessel in response to the generated first stop signal;
A fourteenth sub-step in which the stopping means stops the supply of the second raw material to the reaction vessel in response to the generated second stop signal;
17. The thin film according to claim 16 , wherein the stop means includes a fifteenth sub-step of stopping supply of the first and second raw materials to the reaction vessel in response to the generated third stop signal. Production method. In the sixth sub-step, the correction means includes the first correction excess film so that a peak wavelength of the reflectance of the multilayer film when the multilayer film is stacked for the target number of cycles becomes a target wavelength. In addition to calculating the thickness, in the seventh sub-step, the second overcorrection is performed so that the peak wavelength of the reflectance of the multilayer film becomes the target wavelength when the multilayer film is stacked by the target number of cycles. The thin film manufacturing method according to claim 24 , wherein the film thickness is calculated. 26. The thin film manufacturing method according to any one of claims 21 to 25 , wherein each of the first and second crystalline semiconductor layers is made of a compound semiconductor. The multilayer film may constitute a distributed Bragg reflector disposed on both sides of the active layer of the surface emitting laser element, a thin film production according to any one of claims 26 claim 21. The thin film is
A first thin film having a film thickness equal to or greater than a detection limit of the film thickness by the detection means;
Including a second thin film having a film thickness thinner than a detection limit of the film thickness by the detection means,
In the second step, the detection means irradiates the thin film with light having an arbitrary wavelength, and detects reflected light from the thin film of the irradiated light,
The stop means generates the stop signal when the phase change amount of reflected light from the detection means reaches a target phase change amount corresponding to a target film thickness of the entire thin film in the third step. The thin film manufacturing method according to 16 . The first thin film is
A first crystalline semiconductor layer disposed on one side of the active layer of the surface emitting laser element;
A second crystalline semiconductor layer disposed on the opposite side of the first crystalline semiconductor layer around the active layer,
The second thin film is
A plurality of third crystal semiconductor layers each constituting a quantum well layer included in the active layer;
A plurality of fourth crystal semiconductor layers each constituting a barrier layer included in the active layer,
The plurality of third crystal semiconductor layers are alternately stacked with the plurality of fourth crystal semiconductor layers,
29. The thin film manufacturing method according to claim 28 , wherein the plurality of third and fourth crystal semiconductor layers are disposed between the first and second crystal semiconductor layers. Said first crystal semiconductor layer, the second crystalline semiconductor layer, wherein each of the plurality of third crystalline semiconductor layer and the plurality of fourth crystal semiconductor layer is made of a compound semiconductor, according to claim 29 Thin film manufacturing method. Thin film method of controlling the thickness of the thin film using the thin film manufacturing method according to any one of claims 30 to claim 16.