JP3972534B2 - Semiconductor manufacturing apparatus and semiconductor manufacturing method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor manufacturing apparatus and a semiconductor manufacturing method, and more particularly to a semiconductor manufacturing apparatus and a semiconductor manufacturing method for manufacturing a semiconductor by selectively oxidizing a part of an oxidizable region of a semiconductor precursor.
[0002]
[Prior art]
Vertical Cavity Surface Emitting Laser (VCSEL) has many advantages such as lower manufacturing costs, higher manufacturing yield, and easier two-dimensional integration compared to edge emitting lasers. Therefore, it is expected to be used in many fields such as optical communication, optical information processing, and optical recording.
[0003]
VCSELs are classified into several types according to their basic structure, but the most promising from the viewpoint of laser characteristics such as threshold current value, response speed, power consumption, etc. is called selective oxidation type VCSEL. It is what. For example, as described in KD Choquette et al. “Low threshold voltage vertical-cavity lasers fabricated by selective oxidation” Electron. Lett., Vol. 30, pp. 2033-2044, 1994, etc., AlAs selective oxidation. The type VCSEL is manufactured as follows.
[0004]
First, a lower portion in which 38 cycles of GaAs and Al _0.9 Ga _0.1 As are alternately stacked on an n-type GaAs substrate so that each film thickness becomes 1/4 of the wavelength in the medium by metal organic chemical vapor deposition (MOCVD). An undoped active region in which the film thickness is an in-medium wavelength formed of an n-type DBR (Distributed Bragg Reflector) layer, three InGaAs quantum well active layers, and a GaAs spacer layer, and the film thickness is 1/4 of the in-medium wavelength. An Al _0.98 Ga _0.02 As current confinement layer and a lower n-type DBR layer in which GaAs and Al _0.9 Ga _0.1 As are alternately laminated for 25 periods so that the film thicknesses are each ¼ of the wavelength in the medium are laminated.
[0005]
Next, when the crystal layer is formed into a mesa shape having a depth of 5 μm and a side of 105 μm by reactive ion etching, the side surface of the Al _0.98 Ga _0.02 As current confinement layer is exposed. From this exposed surface, the Al _0.98 Ga _0.02 As current confinement layer is selectively oxidized leaving a few μm at the center. Finally, Ti / Au and AuGe / Ni / Au are deposited on the upper and lower surfaces as electrodes to complete the selective oxidation type VCSEL.
[0006]
As described above, the selective oxidation type VCSEL forms a current confinement structure using a selective oxidation process of AlAs or AlGaAs after crystal growth. As a result, all crystal growth is performed on a flat surface, and a crystal layer with good characteristics can be used. In addition, there is no worry of damage to the active layer generated by the implant type.
[0007]
In addition, for example, when current is injected into the VCSEL manufactured by the above method through the electrodes on both sides, the injected current is confined to a few μm center of the mesa shape that has not been oxidized, and a low threshold current value of 900 μA is obtained. As shown, the selective oxidation VCSEL has excellent laser characteristics.
[0008]
In the selective oxidation type VCSEL, the AlAs or AlGaAs layer remaining without being oxidized is referred to as an aperture (opening). Although the selective oxidation type VCSEL has excellent laser characteristics such as a low threshold current value, various laser characteristics greatly depend on the aperture diameter.
[0009]
For example, DLHuffaker et al. "Multiwavelength, Densely-Packed 2x2 Vertical-Cavity Surface-Emitting Laser Array Fabricated Using Selective Oxidation", IEEE Photon. Technol. Lett., Vol.8, pp.858-860, 1996 As shown in FIG. 9, the current-light output characteristics of selective oxidation VCSELs having aperture diameters of 2, 2.5, 3, and 3.5 μm have been reported. As can be seen from FIG. 9, the threshold current value and the efficiency are greatly different depending on the aperture diameter. Although not shown in the figure, the maximum light output also depends on the aperture diameter. There is also a report that the single mode maximum light output or transverse mode of the selectively oxidized VCSEL largely depends on the aperture diameter.
[0010]
In the oxidation process for forming the aperture, a wet oxidation method as described in US Pat. No. 5,262,360 is generally used. This method is a method in which pure water heated to 80 to 100 ° C. is bubbled using nitrogen as a carrier gas, and the water vapor is transported to a furnace to selectively oxidize only a part of the AlAs or AlGaAs layer. The temperature of the oxidation furnace is usually 400 to 500 ° C. Conventionally, oxidation experiments using this oxidation process were repeatedly performed under various conditions using an oxidation furnace that was actually used, and oxidation was performed under optimized conditions based on the obtained results to produce a selective oxidation type VCSEL. It was.
[0011]
[Problems to be solved by the invention]
However, as reported in many reports including KMGeib et. Al. "Fabfication issues of oxide-confined VCSELs", SPIE Vol.3003, pp.69-74, 1997, the oxidation rate of oxidized AlAs or AlGaAs is It is influenced by several factors such as sample temperature, pure water bubbler temperature, nitrogen gas transport amount, AlAs concentration in AlGaAs, and the thickness of the native oxide film adhering to the side surface of AlAs or AlGaAs layer.
[0012]
For this reason, it is difficult to control the oxidation distance from the mesa side with good reproducibility for each process and to form the aperture diameter according to the design value only by performing the oxidation under the condition set once. There is a problem that the laser characteristics of the VCSEL differ from production to production and cause a reduction in manufacturing yield.
[0013]
The present invention has been made in view of the above problems, and an object of the present invention is to track changes in electrical resistance or current amount over time, and to determine the progress of an oxidation reaction from the electrical resistance or current amount. The object is to provide a semiconductor manufacturing apparatus and a semiconductor manufacturing method capable of predicting and appropriately controlling an oxidation reaction.
[0014]
[Means for Solving the Problems]
In order to achieve the above object, a semiconductor manufacturing apparatus according to claim 1 is a semiconductor manufacturing apparatus for manufacturing a semiconductor by selectively oxidizing a part of an oxidizable region of a semiconductor precursor, wherein the semiconductor precursor is a semiconductor manufacturing apparatus. A pair of electrode probes for applying a voltage to a monitor sample disposed in the vicinity of the body or the semiconductor precursor and having an oxidizable region, and a current path of the oxidizable region of the semiconductor precursor or the monitor sample Detecting means for detecting an electric resistance or current amount during an oxidation reaction of the semiconductor precursor or the monitoring sample by contacting the pair of electrode probes so as to cross the oxidizable region; and the detected electric resistance or current And a reaction control means for controlling the oxidation reaction of the semiconductor precursor in the oxidation furnace based on the amount.
[0015]
In the first aspect of the invention, the detection means can track the electrical resistance or the amount of current during the oxidation reaction of the semiconductor precursor or the monitoring sample in the oxidation furnace over time. In addition, the reaction control means provided in the apparatus predicts the progress of the oxidation reaction by utilizing the fact that the electrical resistance or the amount of current changes depending on the progress of the oxidation reaction, and appropriately performs the oxidation reaction of the semiconductor precursor. Can be controlled.
[0016]
According to a second aspect of the present invention, there is provided a semiconductor manufacturing apparatus according to the first aspect, further comprising display means for displaying the electrical resistance or the amount of current. By providing the display means, the operator can visually know the progress of the oxidation reaction.
[0017]
The semiconductor manufacturing method according to claim 3 is a semiconductor manufacturing method for manufacturing a semiconductor by selectively oxidizing a part of an oxidizable region of a semiconductor precursor , wherein the semiconductor precursor or the vicinity of the semiconductor precursor is used. And a pair of electrode probes are arranged so that the current path crosses the oxidizable region of the semiconductor precursor or the oxidizable region of the monitoring sample. The electrical resistance or current amount during the oxidation reaction of the semiconductor precursor or the monitoring sample is detected, and the oxidation reaction of the semiconductor precursor in the oxidation furnace is performed based on the detected electrical resistance or current amount. The semiconductor is manufactured by controlling.
[0018]
According to a sixth aspect of the present invention, there is provided a semiconductor manufacturing method according to the third aspect of the present invention, wherein when the electrical resistance or the amount of current of the monitoring sample disposed in the vicinity of the semiconductor precursor changes abruptly, the semiconductor precursor The oxidation reaction of is stopped.
The change in electrical resistance or current when the oxidizable region disappears is clear, and the monitor sample is designed so that the oxidizable region disappears when the area of the unoxidized region of the semiconductor precursor reaches the desired value If the oxidation reaction is stopped when the oxidizable region disappears from the monitor sample, a semiconductor precursor having an unoxidized region having a desired area can be easily obtained.
[0019]
“Nearby” means within a distance that allows the same oxidation environment as that of the semiconductor precursor to be enjoyed in the oxidation furnace.
[0020]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, a semiconductor manufacturing apparatus and a semiconductor manufacturing method of the present invention will be described in detail based on embodiments.
[0021]
(First embodiment)
The semiconductor manufacturing apparatus according to the first embodiment is an apparatus for performing steam oxidation. As shown in FIG. 1, as shown in FIG. 1, an oxidation furnace 10, a square (rectangular) shape oxidizable region 12 </ b> A (white) A semiconductor precursor 12 having a cut-out portion), a pair of measurement electrode probes 14 and 16 for applying a predetermined voltage to the semiconductor precursor 12, a computer 18, and a monitor 20 as display means connected to the computer 18. Has been.
[0022]
The oxidation furnace 10 is provided with a heater 22 and an introduction pipe provided with a valve 24 for introducing water vapor. A drive circuit for the heater 22 and a drive device (not shown) for the valve 24 are respectively connected to the computer 18. It is connected to the.
[0023]
The measurement electrode probes 14 and 16 are in contact with the semiconductor precursor 12 so that the current path crosses the oxidizable region 12A when a voltage is applied between the probes. The measurement electrode probes 14 and 16 may be needle-shaped or clip-shaped as long as they can be temporarily fixed in contact with the semiconductor precursor 12 during the oxidation reaction.
[0024]
The measurement electrode probe 16 is connected to a power source 19 via a switch 17, the measurement electrode probe 14 is connected to an ammeter 15, and the ammeter 15 is connected to an A / D converter (not shown). Connected to the computer 18. Then, the switch 17 is turned on by a signal from the computer 18, a predetermined voltage is applied between the power source 19 and the measurement electrode probes 14 and 16, and the current flowing at that time is detected by the ammeter 15 to detect it. Output a signal. The detection signal output from the ammeter 15 is converted into a digital signal by an A / D converter and input to the computer 18.
[0025]
The computer 18 includes a CPU 32, a ROM 34, and a RAM 36, and the CPU 32 performs processing based on a control routine program described below stored in the ROM 34.
[0026]
A control routine executed by the computer 18 will be described with reference to FIG.
In step 100, the signal from the ammeter 15 is captured, and in step 102, the electric resistance R is calculated from the current amount I and the applied voltage V. In step 104, the electric resistance R is displayed on the monitor 20.
[0027]
Next, in step 106, it is determined whether or not a reaction stop condition is satisfied.
In the semiconductor precursor having a square (rectangular) oxidizable region as shown in FIG. 2, the oxidizable region is oxidized from each side toward the center. At this time, the oxidation rate is constant. It increases in proportion to the square of the oxidation time. On the other hand, the electric resistance R increases little by little as the oxidation region increases, and rapidly increases when all the oxidizable regions 12A of the semiconductor precursor 12 are oxidized, and thereafter becomes constant. Therefore, the area S of the desired unoxidized region is obtained using the map shown in FIG. 4 showing the correlation between the electrical resistance R stored in advance in the ROM and the area S of the unoxidized region. The electrical resistance R _x may correspond to the determined reaction stopped condition can be determined to be satisfied when the electric resistance R matches the electrical resistance R _x.
[0028]
Alternatively, it may be determined that the reaction stop condition is satisfied when a stop signal is input to the computer 18 by the operator. That is, the value of the electric resistance R displayed on the monitor 20 may be viewed to determine whether or not the operator stops the reaction, and the reaction may be stopped manually. If the reaction stop condition is satisfied in step 106, the semiconductor precursor 12 is carried out of the oxidation furnace 10 by a transfer device (not shown) in step 108 to stop the oxidation reaction.
[0029]
(Second Embodiment)
The semiconductor manufacturing apparatus according to the second embodiment is the same as the first except that the monitor sample 13 shown in FIG. 5B is arranged in the vicinity of the semiconductor precursor 12 and the electrical resistance is detected using this. Since the configuration is the same as that of the embodiment, the description of the same portion is omitted.
[0030]
The monitor sample 13 has a stripe-shaped oxidizable region shown in FIG. 5B, and is oxidized when the area of the unoxidized region of the semiconductor precursor 12 shown in FIG. 5A reaches a desired value. as area 13A disappears, the width r _m oxidizable region 13A of the monitor sample 13 before entering the oxidation reactor is defined as shown in the following formula. However, NA is the diameter of the unoxidized region of the semiconductor precursor 12 to be produced, and r ₀ is the diameter of the oxidizable region.
r _m = r ₀ −NA
Since the oxidation rate V is constant, when the diameter r _m oxidizable region 13A of the sample for the monitor, is equal to the difference between the diameter r ₀ of the oxidized region of the semiconductor precursor 12 and size NA unoxidized region In addition, the oxidizable region 13A of the monitoring sample disappears at the same time as the diameter NA of the unoxidized region of the semiconductor precursor 12 reaches a desired value.
[0031]
The measurement electrode probes 14 and 16 are in contact with the monitor sample 13 so that the current path crosses the oxidizable region 13A when a voltage is applied.
[0032]
A control routine executed by the computer 18 will be described with reference to FIG.
In step 200, a signal from the ammeter 15 is captured and the current amount I is detected. The current amount I detected in step 202 is displayed on the monitor 20.
[0033]
Next, in step 204, it is determined whether or not a reaction stop condition is satisfied.
The oxidizable region 13A of the monitor sample 13 is oxidized toward the center from two opposite sides. At this time, the oxidation rate is constant, so that the oxidized region increases or decreases in proportion to the oxidation time. On the other hand, the amount of current I passing through the monitor sample 13 gradually decreases as the oxidized region increases, and rapidly decreases when all the oxidizable regions 13A of the monitor sample 13 are oxidized and disappear. Therefore, it can be determined that the reaction stop condition is satisfied when the current amount changes suddenly. Alternatively, it may be determined that the reaction stop condition is satisfied when a stop signal is input to the computer 18 by the operator. In other words, the operator may determine whether or not to stop the reaction by looking at the value of the current amount I displayed on the monitor 20 and stop the reaction manually.
[0034]
If the reaction stop condition is satisfied at step 204, the semiconductor precursor 12 is carried out of the oxidation furnace 10 by a transfer device (not shown) at step 206 to stop the oxidation reaction.
[0035]
In the first embodiment, the electric resistance R is calculated, and the oxidation reaction is controlled based on the calculated electric resistance R. However, as in the second embodiment, the oxidation reaction is controlled based on the current amount I. May be. Further, the change rate ΔR (= R _old −R _new ) of the electric resistance is calculated from the electric resistance R _{new at} the current time and the previous electric resistance R _old obtained in the same manner and stored in the RAM. The oxidation reaction may be controlled based on the change rate ΔR.
[0036]
In the second embodiment, the current amount I of the monitoring sample is detected, and the oxidation reaction is controlled based on the detected current amount I. However, based on the electric resistance R as in the first embodiment. The oxidation reaction may be controlled. Alternatively, the current amount change rate ΔI may be calculated from the current amount I, and the oxidation reaction may be controlled based on the current amount change rate ΔI.
[0037]
In the second embodiment, the monitor sample has a stripe-shaped oxidizable region and is designed so that the oxidizable region disappears when the area of the unoxidized region of the semiconductor precursor reaches a desired value. However, the present invention is not limited to the stripe shape, and a monitor sample having an oxidizable region similar to a semiconductor precursor such as a rectangle, a circle, or an ellipse may be used.
[0038]
In the first and second embodiments, the apparatus for performing the steam oxidation has been described, but it goes without saying that the present invention can be applied to other oxidation methods.
[0039]
In the first and second embodiments, the measurement electrode probe is brought into contact with the semiconductor precursor or the monitor sample. However, in order to reduce the contact resistance, the contact member made of the electrode material is formed before the oxidation step. A precursor or a monitor sample may be provided, and a measurement electrode probe may be brought into contact therewith.
[0040]
In the first and second embodiments, the semiconductor precursor is carried out of the oxidation furnace by the transfer device and the oxidation reaction is stopped, but the drive circuit of the heater provided in the oxidation furnace is turned off, or water vapor The oxidation reaction may be stopped by an operation such as closing a valve for introducing.
[0041]
Next, an example in which the semiconductor manufacturing apparatus of the present embodiment is applied to the manufacturing of the selective oxidation type surface emitting semiconductor laser shown in FIG.
[0042]
On an n-type GaAs substrate 1, an n-type GaAs buffer layer 2, a lower n-type DBR3 made of n-type aluminum gallium arsenide (Al _0.9 Ga _0.1 As / Al _0.3 Ga _0.7 As), and undoped Al _0.6 Ga _0.4 As A lower spacer layer 4 made of, an undoped Al _0.11 Ga _0.89 As quantum well layer and a quantum well active layer 5 made of an undoped Al _0.3 Ga _0.7 As barrier layer, and an upper spacer layer 6 made of undoped Al _0.6 Ga _0.4 As. The VCSEL precursor was obtained by sequentially laminating the active region 7 including the upper DBR 8 made of p-type Al _0.9 Ga _0.1 As / Al _0.3 Ga _0.7 As and the p-type GaAs contact layer 9. However, the p-type AlAs layer 10 was inserted in the place where the lowermost Al _0.9 Ga _0.1 As in the upper DBR 8 should enter. The layer up to the active layer 5 was removed by reactive ion etching using boron trichloride and chlorine (BCl ₃ + Cl ₂ ) gas to form a mesa shape. Thereby, the side surface of the AlAs layer 10 was exposed.
[0043]
A monitor sample having the same laminated structure as that of the VCSEL precursor and designed so that when the aperture diameter of the VCSEL precursor reaches a desired value, the AlAs layer is entirely oxidized and disappears was prepared.
[0044]
An introduction tube for transporting water vapor obtained by bubbling pure water heated to 95 ° C. into the mesa-shaped VCSEL precursor together with the monitor sample, using nitrogen as a carrier gas, to the oxidation furnace, It is placed in the oxidation furnace of the semiconductor manufacturing apparatus of the present invention having a valve for opening and closing the introduction pipe and a heater, heated to 400 ° C., and part of the AlAs layer 10 is selectively selected from the exposed surface by the heated steam. Oxidize.
[0045]
A measurement electrode probe was brought into contact with the n-type GaAs substrate of the monitor sample and the p-type GaAs contact layer, and a voltage of 5 V was applied to both ends thereof to track the time change of the electric resistance R. As shown in FIG. 8, the electrical resistance R gradually increased with the progress of the oxidation reaction, and greatly increased when the AlAs layer of the monitoring sample was completely oxidized (point B). By stopping the oxidation reaction at this point, a desired aperture diameter NA could be obtained. In addition, although the time change of the electrical resistance R of the VCSEL precursor shows the same behavior, in that case, at the time before all the AlAs layers are oxidized (for example, point A) so that an unoxidized region is formed. Stop the reaction.
[0046]
The fact that the electrical resistance changes greatly when the AlAs layer is entirely oxidized can be easily explained from the following. That is, Al ₂ O ₃ obtained when AlAs was oxidized with water vapor (S.Guha, Appl.Phys.Lett.Vol.68, pp.906-908) is, according to Chronological Scientific Tables, Al ₂ The specific resistance of O ₃ is 10 ¹¹ to 10 ¹⁴ Ω · cm. AlAs layer after the oxidation reaction, namely because the thickness of the Al ₂ O ₃ layer is 20 to 40 nm, the resistance of Al ₂ O ₃ selective oxidation layer has a specific resistance of ^{_{Al 2 O 3 (10 11 Ω}} · cm) × Thickness (20 nm) ÷ area (mesa diameter is 50 μm), which is at least 1 MΩ or more. On the other hand, the series resistance of the selective oxidation type VCSEL having an aperture diameter of several μm is only several hundred Ω. If this is compared, there is no doubt that the electrical resistance changes greatly when all the AlAs layers are oxidized.
[0047]
After completion of the oxidation reaction, a silicon oxynitride film 11 is deposited to a thickness of about 1 μm by plasma-assisted chemical vapor deposition at 250 ° C. so as to cover the mesa, and is emitted to the top of the mesa. A p-type electrode 12 made of a Ti / Au laminated film was formed except for the opening and connected to the p-type GaAs contact layer 9. An n-type electrode 13 was formed on the back surface of the substrate so as to cover the entire back surface.
[0048]
Here, the lower DBR 3 has an n-type Al _0.9 Ga _0.1 As layer and an Al _0.3 Ga _0.7 As layer alternately with thicknesses λ / (4n _r ) (λ: oscillation wavelength, n _r : refractive index of the medium). The silicon concentration of the dopant is 2 × 10 ¹⁸ cm ⁻³ . The p-type AlAs layer 10 has a thickness λ / (4n _r ), and the carbon concentration of the dopant is 3 × 10 ¹⁸ cm ⁻³ . The upper DBR 8 is formed by alternately stacking a p-type Al _0.9 Ga _0.1 As layer and the same Al _0.3 Ga _0.7 As layer for 30 periods each of thickness λ / (4n _r ), and the carbon concentration of the dopant is 3 × 10 ¹⁸ cm ⁻³ . Finally, the p-type GaAs contact layer 9 has a thickness of 20 nm and a carbon concentration of 1 × 10 ²⁰ cm ⁻³ . The reason why the number of periods (number of layers) of the upper DBR 8 is made smaller than that of the lower DBR 3 is to extract outgoing light from the upper surface of the substrate with a difference in reflectance. The types of dopants are not limited to those listed here, but selenium can be used for n-type, and zinc or magnesium can be used for p-type. Although not described in detail, in order to reduce the series resistance of the element, a so-called transition region having an intermediate aluminum composition ratio is interposed between the Al _0.9 Ga _0.1 As layer and the Al _0.3 Ga _0.7 As layer in the semiconductor multilayer film. It is out. As the insulating film covering the mesa, a silicon oxide film, a silicon nitride film, or the like can be used.
[0049]
The obtained selective oxidation type VCSEL is configured as described above, and can oscillate a laser by passing a current between the n-type electrode 13 and the p-type electrode 12, and a laser beam having an oscillation wavelength λ of 780 nm is used as a substrate. Can be removed from the surface.
[0050]
In the above description, a VCSEL having a near infrared wavelength using AlGaAs as an active layer has been described as an example. However, the present invention can also be applied to a surface emitting laser for infrared using GaAs or InGaAs and for red using InGaP or AlGaInP. Further, it can be used for blue or ultraviolet surface emitting lasers such as GaN and ZnSe, and 1.3 to 1.5 μm band surface emitting lasers such as InGaAsP. The DBR layer is not limited to a semiconductor material, and an insulating film can also be used.
Further, the example in which the AlAs layer is oxidized has been described. However, when AlGaAs is oxidized, any other material that causes an oxidation phenomenon in other semiconductor layers can be used in the same manner.
[0051]
Further, although an example in which only one AlAs layer is inserted immediately above the active layer has been described, the insertion position is not limited to just above the active layer, and the present invention can be used even if there are a plurality of AlAs layers.
[0052]
In addition, a mesa shape is not used for the oxidized VCSEL, for example, a structure in which an oxidation aperture is formed by providing an oxidation hole in a substrate has been proposed. However, the semiconductor manufacturing apparatus and the semiconductor manufacturing method of the present invention are all It can be effectively used for oxidized VCSELs.
[0053]
The semiconductor manufacturing apparatus and the semiconductor manufacturing method of the present invention are not only used as a measure for improving controllability when forming the aperture diameter of an oxidized VCSEL, but also when a VCSEL DBR mirror is manufactured using an oxidation process. Can also be used.
[0054]
As described above, when the semiconductor manufacturing apparatus and the semiconductor manufacturing method of the present invention are applied to the manufacture of a selective oxidation type VCSEL, the temporal change in the electrical resistance (or current amount) of the VCSEL precursor or the monitor sample during the oxidation reaction can be reduced. The oxidation reaction can be controlled based on the fact that the electric resistance (or current amount) changes according to the progress of the oxidation reaction. As a result, it is possible to increase the reproducibility of the manufacturing process of the selective oxidation type VCSEL, for example, by forming the aperture diameter as designed and manufacturing a VCSEL having no variation in laser characteristics with a high yield.
[0055]
【The invention's effect】
The semiconductor manufacturing apparatus and the semiconductor manufacturing method of the present invention can track the change over time in the electrical resistance or the current amount, predict the progress of the oxidation reaction from the electrical resistance or the current amount, and appropriately control the oxidation reaction. There is an effect that it is possible.
[Brief description of the drawings]
FIG. 1 is a schematic view showing a configuration of a semiconductor manufacturing apparatus according to a first embodiment.
FIG. 2 is a schematic view of a semiconductor precursor in the semiconductor manufacturing apparatus according to the first embodiment.
FIG. 3 is a flowchart showing a control routine performed by the semiconductor manufacturing apparatus according to the first embodiment.
FIG. 4 is a graph showing a correlation between an electric resistance R and an area S of an unoxidized region.
5A is a schematic plan view of a semiconductor precursor, and FIG. 5B is a schematic plan view of a monitor sample used for controlling the oxidation reaction of the semiconductor precursor shown in FIG. 5A.
FIG. 6 is a flowchart showing a control routine performed by the semiconductor manufacturing apparatus according to the second embodiment.
FIG. 7 is a schematic cross-sectional view showing a configuration of a selective oxidation VCSEL to which the present invention can be applied.
FIG. 8 is a graph showing temporal changes in the electrical resistance R of the VCSEL obtained through experiments.
FIG. 9 is a graph showing the aperture diameter dependence of the current-light output characteristics of the selective oxidation type VCSEL.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 Oxidation furnace 12 Semiconductor precursor 13 Monitor samples 14 and 16 Measurement electrode probe 15 Ammeter 17 Switch 18 Computer 19 Power supply 20 Monitor 22 Heater 24 Valve

Claims (6)

A semiconductor manufacturing apparatus for manufacturing a semiconductor by selectively oxidizing a part of an oxidizable region of a semiconductor precursor,
A pair of electrode probes for applying a voltage to the semiconductor precursor or a sample for monitoring that is disposed in the vicinity of the semiconductor precursor and includes an oxidizable region, and a current path is the oxidizable region of the semiconductor precursor or the monitor Detecting means for detecting an electrical resistance or an amount of current during an oxidation reaction of the semiconductor precursor or the monitoring sample by bringing the pair of electrode probes into contact with each other across the oxidizable region of the operating sample ;
Reaction control means for controlling the oxidation reaction of the semiconductor precursor in the oxidation furnace based on the detected electric resistance or current amount;
A semiconductor manufacturing apparatus comprising:   The semiconductor manufacturing apparatus according to claim 1, further comprising display means for displaying the electrical resistance or the current amount. A semiconductor manufacturing method for manufacturing a semiconductor by selectively oxidizing a part of an oxidizable region of a semiconductor precursor,
A sample for monitoring disposed in the vicinity of the semiconductor precursor or the semiconductor precursor and having an oxidizable region is disposed in an oxidation furnace,
A pair of electrode probes are brought into contact so that a current path crosses the oxidizable region of the semiconductor precursor or the oxidizable region of the monitoring sample, so that the electrical resistance during the oxidation reaction of the semiconductor precursor or the monitoring sample or Detect the amount of current
A semiconductor manufacturing method for manufacturing a semiconductor by controlling an oxidation reaction of a semiconductor precursor in an oxidation furnace based on a detected electric resistance or current amount. The monitor sample includes an oxidizable region that is oxidized at the same rate as the semiconductor precursor, and the amount of current in the monitor sample decreases as the oxidized region increases, and all of the oxidizable region is oxidized. The semiconductor manufacturing method according to claim 3, wherein the semiconductor manufacturing method is formed so as to rapidly decrease at a time point . The monitor sample comprises an oxidizable region that is oxidized at the same rate as the semiconductor precursor, and the electrical resistance of the monitor sample increases as the oxidized region increases, and all of the oxidizable region is oxidized. The semiconductor manufacturing method according to claim 3, wherein the semiconductor manufacturing method is formed so as to increase rapidly at a time point .   6. The semiconductor manufacturing method according to claim 3, wherein an oxidation reaction of the semiconductor precursor is stopped when an electrical resistance or an amount of current of the monitoring sample is rapidly changed.

Images