JP4962559B2 - Anti-reflection coating composition - Google Patents
Anti-reflection coating composition Download PDFInfo
- Publication number
- JP4962559B2 JP4962559B2 JP2009500220A JP2009500220A JP4962559B2 JP 4962559 B2 JP4962559 B2 JP 4962559B2 JP 2009500220 A JP2009500220 A JP 2009500220A JP 2009500220 A JP2009500220 A JP 2009500220A JP 4962559 B2 JP4962559 B2 JP 4962559B2
- Authority
- JP
- Japan
- Prior art keywords
- group
- water
- fluorine
- composition
- atom
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000008199 coating composition Substances 0.000 title claims abstract description 30
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 67
- 238000000576 coating method Methods 0.000 claims abstract description 47
- 239000011248 coating agent Substances 0.000 claims abstract description 42
- 239000004094 surface-active agent Substances 0.000 claims abstract description 40
- 125000001153 fluoro group Chemical group F* 0.000 claims abstract description 25
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 24
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 23
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 23
- 229920003169 water-soluble polymer Polymers 0.000 claims abstract description 22
- 150000001875 compounds Chemical class 0.000 claims abstract description 20
- 125000001309 chloro group Chemical group Cl* 0.000 claims abstract description 19
- 125000005010 perfluoroalkyl group Chemical group 0.000 claims abstract description 13
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims abstract description 12
- 239000012736 aqueous medium Substances 0.000 claims abstract description 11
- 150000003839 salts Chemical class 0.000 claims abstract description 10
- 125000006551 perfluoro alkylene group Chemical group 0.000 claims abstract description 8
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 claims abstract description 7
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 40
- 239000011737 fluorine Substances 0.000 claims description 40
- 239000000203 mixture Substances 0.000 claims description 35
- 239000004811 fluoropolymer Substances 0.000 claims description 21
- 229920002313 fluoropolymer Polymers 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 19
- 238000006116 polymerization reaction Methods 0.000 claims description 16
- 125000000524 functional group Chemical group 0.000 claims description 12
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 12
- 230000002378 acidificating effect Effects 0.000 claims description 11
- 150000001412 amines Chemical class 0.000 claims description 11
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 9
- 229910052783 alkali metal Inorganic materials 0.000 claims description 5
- 150000001340 alkali metals Chemical class 0.000 claims description 5
- 125000001453 quaternary ammonium group Chemical group 0.000 claims description 5
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 4
- 238000005227 gel permeation chromatography Methods 0.000 claims description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 2
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 claims 1
- YFSUTJLHUFNCNZ-UHFFFAOYSA-N perfluorooctane-1-sulfonic acid Chemical compound OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F YFSUTJLHUFNCNZ-UHFFFAOYSA-N 0.000 abstract description 2
- SNGREZUHAYWORS-UHFFFAOYSA-N perfluorooctanoic acid Chemical compound OC(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F SNGREZUHAYWORS-UHFFFAOYSA-N 0.000 abstract description 2
- 229920000642 polymer Polymers 0.000 description 27
- 230000000052 comparative effect Effects 0.000 description 18
- 229920002120 photoresistant polymer Polymers 0.000 description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 16
- -1 Perfluoroalkyl sulfates Chemical class 0.000 description 12
- 239000000178 monomer Substances 0.000 description 11
- 239000000243 solution Substances 0.000 description 8
- 101001136034 Homo sapiens Phosphoribosylformylglycinamidine synthase Proteins 0.000 description 6
- 150000005857 PFAS Chemical class 0.000 description 6
- 102100036473 Phosphoribosylformylglycinamidine synthase Human genes 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
- 239000006117 anti-reflective coating Substances 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 125000000217 alkyl group Chemical group 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 239000003505 polymerization initiator Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- 239000004215 Carbon black (E152) Substances 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 3
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 235000019441 ethanol Nutrition 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 238000006460 hydrolysis reaction Methods 0.000 description 3
- 239000002609 medium Substances 0.000 description 3
- 125000004430 oxygen atom Chemical group O* 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- 239000012986 chain transfer agent Substances 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 125000004492 methyl ester group Chemical group 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 150000002978 peroxides Chemical class 0.000 description 2
- 230000000379 polymerizing effect Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 239000003232 water-soluble binding agent Substances 0.000 description 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- GVNVAWHJIKLAGL-UHFFFAOYSA-N 2-(cyclohexen-1-yl)cyclohexan-1-one Chemical compound O=C1CCCCC1C1=CCCCC1 GVNVAWHJIKLAGL-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- WBIQQQGBSDOWNP-UHFFFAOYSA-N 2-dodecylbenzenesulfonic acid Chemical compound CCCCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O WBIQQQGBSDOWNP-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 101150065749 Churc1 gene Proteins 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- 102100038239 Protein Churchill Human genes 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- 150000004996 alkyl benzenes Chemical class 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 239000012933 diacyl peroxide Substances 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 229940060296 dodecylbenzenesulfonic acid Drugs 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 150000004676 glycans Chemical class 0.000 description 1
- 229940051250 hexylene glycol Drugs 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- JGTNAGYHADQMCM-UHFFFAOYSA-N perfluorobutanesulfonic acid Chemical compound OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F JGTNAGYHADQMCM-UHFFFAOYSA-N 0.000 description 1
- YPJUNDFVDDCYIH-UHFFFAOYSA-N perfluorobutyric acid Chemical compound OC(=O)C(F)(F)C(F)(F)C(F)(F)F YPJUNDFVDDCYIH-UHFFFAOYSA-N 0.000 description 1
- 150000004978 peroxycarbonates Chemical class 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920001282 polysaccharide Polymers 0.000 description 1
- 239000005017 polysaccharide Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- BWJUFXUULUEGMA-UHFFFAOYSA-N propan-2-yl propan-2-yloxycarbonyloxy carbonate Chemical compound CC(C)OC(=O)OOC(=O)OC(C)C BWJUFXUULUEGMA-UHFFFAOYSA-N 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Paints Or Removers (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
本発明は反射防止コーティング用組成物に関する。 The present invention relates to an antireflection coating composition.
フォトリソグラフィによってフォトレジストのパターンを形成する際、露光時にフォトレジスト層と基材との境界面およびフォトレジスト層表面で反射する光が干渉すると、パターンの寸法精度を低下させる。この反射光を低減する目的で、フォトレジスト層表面に反射防止膜を形成する方法が検討されてきた。この反射防止膜における反射防止性能は、目的とする光源の波長における反射防止膜の屈折率および膜厚、そしてフォトレジスト層の屈折率および膜厚により決定されることになるが、反射防止膜の屈折率はフォトレジスト層の屈折率に比較して低屈折率であることが必要である。
一般に、反射防止膜を形成するための組成物は、(a)界面活性剤と(b)水溶性バインダーポリマーと(c)水性媒体を主要な構成成分とし、例えば下記特許文献1、2、3では、(a)界面活性剤として、フッ素原子を含有する化合物を用いることにより膜の屈折率を低減させている。When forming a photoresist pattern by photolithography, if light reflected from the boundary surface between the photoresist layer and the substrate and the surface of the photoresist layer interferes during exposure, the dimensional accuracy of the pattern is reduced. In order to reduce the reflected light, a method of forming an antireflection film on the surface of the photoresist layer has been studied. The antireflection performance of this antireflection film is determined by the refractive index and film thickness of the antireflection film at the wavelength of the target light source, and the refractive index and film thickness of the photoresist layer. The refractive index needs to be lower than the refractive index of the photoresist layer.
In general, a composition for forming an antireflection film has (a) a surfactant, (b) a water-soluble binder polymer, and (c) an aqueous medium as main constituent components. Then, (a) the refractive index of a film | membrane is reduced by using the compound containing a fluorine atom as surfactant.
しかし近年では、従来反射防止膜用の組成物に使用されてきた、炭素数7以上のPFAS(Perfluoroalkyl sulfonates)およびPFAA(Perfluoroalkyl Acids)について環境への影響が懸念されており、例えば米国EPA(Environment Protection Agency)のSNUR(Significant New Use Rule,2002年3月11日付等)などでは輸入、製造時には制限を設けようとする動きもある。そのような環境下において炭素数7以上のPFASおよびPFAAを使用しない反射防止膜用の組成物が強く望まれているのが現状である。 However, in recent years, there have been concerns about the environmental impact of PFAS (Perfluoroalkyl sulfates) and PFAA (Perfluoroalkyl Acids) having 7 or more carbon atoms, which have been used in conventional antireflection coating compositions. For example, the United States EPA (Environment) Protection Agency's SNUR (Significant New Use Rule, dated March 11, 2002, etc.) and others are also trying to set restrictions when importing and manufacturing. Under such circumstances, there is a strong demand for a composition for an antireflection film that does not use PFAS and PFAA having 7 or more carbon atoms.
このような状況下において、例えば下記特許文献4〜7には、(b)水溶性バインダーポリマーとして、フッ素原子を含むポリマーを用いた反射防止膜のコーティング組成物が提案されている。
しかし、特許文献4〜7に記載されているような従来のコーティング組成物にあっては、界面活性剤として、炭素数7以上のPFASおよびPFAA等や炭化水素系の界面活性剤を使用できることが記載されている。反射防止膜のコーティング組成物は、表面張力の低いレジスト膜上に塗布されるため、特に(c)水性媒体として水を用いるような場合、相当量の(a)界面活性剤を使用してコーティング組成物の表面張力を下げる必要がある。しかしながら、炭化水素系の界面活性剤は表面張力低下能が必ずしも充分ではないため多量に添加する必要があり、しかも炭素水素系界面活性剤自身の屈折率が比較的高いため、コーティング組成物全体の屈折率が低くなり難いという問題点がある。
また、特許文献5には、組成物に含有される水溶性フッ素化合物として、パーフルオロブタンスルホン酸やパーフルオロブタン酸が挙げられている。しかし、これらの化合物を用いて得られる反射防止膜が、膜厚が均一で、屈折率が十分に低いものとなるかどうかは不明である。
本発明は前記事情に鑑みてなされたもので、炭素数7以上のPFASおよびPFAAを使用することなく、表面張力が低くて塗布性に優れるとともに、屈折率が低い反射防止膜を形成できる反射防止コーティング用組成物を提供することを目的とする。However, in the conventional coating compositions as described in Patent Documents 4 to 7, it is possible to use PFAS and PFAA having 7 or more carbon atoms or a hydrocarbon-based surfactant as the surfactant. Are listed. Since the anti-reflective coating composition is applied onto a resist film having a low surface tension, it is coated with a considerable amount of (a) a surfactant, particularly when (c) water is used as an aqueous medium. It is necessary to reduce the surface tension of the composition. However, hydrocarbon-based surfactants do not necessarily have sufficient surface tension reducing ability, so it is necessary to add them in large amounts, and since the refractive index of the hydrocarbon-based surfactants themselves is relatively high, There is a problem that the refractive index is hardly lowered.
Patent Document 5 includes perfluorobutanesulfonic acid and perfluorobutanoic acid as water-soluble fluorine compounds contained in the composition. However, it is unclear whether the antireflection film obtained using these compounds has a uniform film thickness and a sufficiently low refractive index.
The present invention has been made in view of the above circumstances, and without using PFAS and PFAA having 7 or more carbon atoms, the surface tension is low, the coatability is excellent, and an antireflection film having a low refractive index can be formed. An object is to provide a coating composition.
前記課題を解決するために本発明の反射防止コーティング用組成物は、下記一般式(I)で表わされる化合物(A1)を含む含フッ素界面活性剤(A)と、水溶性ポリマー(B)と、水性媒体(C)を含有し、
前記水溶性ポリマー(B)が、下記一般式(IV)で表される重合単位(b1)を有する水溶性含フッ素重合体(B1)を、50質量%以上含有することを特徴とする。
R1−O−(R2−O)n−R3−X1 ・・・(I)
(式中、R1は末端のフッ素原子が水素原子または塩素原子で置換されていてもよい、直鎖状または分岐状のパーフルオロアルキル基を示し、R2及びR3はそれぞれ独立に、直鎖状または分岐状のパーフルオロアルキレン基を示し、R1、R2及びR3の炭素数の合計が5以下であり、nは0または1以上の整数を示し、X1は塩を形成していてもよい、−COOHまたは−C(CF2Z1)(CF2Z2)OHである。Z1およびZ2はそれぞれ、水素原子、フッ素原子、塩素原子またはトリフルオロメチル基である。)
In order to solve the above problems, an antireflection coating composition of the present invention comprises a fluorine-containing surfactant (A) containing a compound (A1) represented by the following general formula (I), a water-soluble polymer (B), Containing an aqueous medium (C) ,
The water-soluble polymer (B) contains 50% by mass or more of a water-soluble fluoropolymer (B1) having a polymerization unit (b1) represented by the following general formula (IV) .
R 1 —O— (R 2 —O) n —R 3 —X 1 (I)
(In the formula, R 1 represents a linear or branched perfluoroalkyl group in which the terminal fluorine atom may be substituted with a hydrogen atom or a chlorine atom, and R 2 and R 3 are each independently Represents a chain or branched perfluoroalkylene group, the total number of carbon atoms of R 1 , R 2 and R 3 is 5 or less, n represents 0 or an integer of 1 or more, and X 1 forms a salt. And —COOH or —C (CF 2 Z 1 ) (CF 2 Z 2 ) OH, each of Z 1 and Z 2 is a hydrogen atom, a fluorine atom, a chlorine atom or a trifluoromethyl group. )
本発明によれば、環境への影響の観点から使用禁止となる懸念がある炭素数7以上のPFASおよびPFAAを使用せずに、表面張力が低くて塗布性に優れるとともに、屈折率が低い反射防止膜を形成できる反射防止コーティング用組成物を実現することができる。 According to the present invention, without using PFAS and PFAA having 7 or more carbon atoms, which may be prohibited from the viewpoint of environmental impact, the surface tension is low, the coatability is excellent, and the refractive index is low. An antireflection coating composition capable of forming an antireflection film can be realized.
<含フッ素界面活性剤(A)>
本発明で用いられる含フッ素界面活性剤(A)(以下、単に(A)成分ということもある。)は、前記一般式(I)で表わされる化合物(A1)を含有する。
本明細書におけるパーフルオロアルキル基は、アルキル基の炭素原子に結合している水素原子の全部がフッ素原子で置換されている基を意味し、エーテル結合含有パーフルオロアルキル基は、パーフルオロアルキル基の炭素鎖にエーテル結合性の酸素原子が挿入されている基を意味する。
パーフルオロアルキル基におけるアルキル基は直鎖状であってもよく分岐状でもよい。該パーフルオロアルキル基の末端のフッ素原子は、水素原子または塩素原子で置換されていてもよい。
エーテル結合含有パーフルオロアルキル基における、エーテル結合性酸素原子を有する炭素鎖は直鎖状であってもよく分岐状でもよい。
(A)成分において、分子中に存在する含フッ素アルキル基の炭素数は5以下である。すなわち、(A)成分は炭素数6以上のパーフルオロアルキル基および炭素数6以上のエーテル結合含有パーフルオロアルキル基のいずれも有さない。該含フッ素アルキル基の炭素数の下限値は特に限定されないが、表面張力低下能の点から4以上が好ましい。該炭素数は4または5がより好ましい。<Fluorine-containing surfactant (A)>
The fluorine-containing surfactant (A) used in the present invention (hereinafter sometimes simply referred to as component (A)) contains the compound (A1) represented by the general formula (I).
The perfluoroalkyl group in the present specification means a group in which all of the hydrogen atoms bonded to the carbon atoms of the alkyl group are substituted with fluorine atoms, and the ether bond-containing perfluoroalkyl group is a perfluoroalkyl group. A group in which an etheric oxygen atom is inserted into the carbon chain.
The alkyl group in the perfluoroalkyl group may be linear or branched. The terminal fluorine atom of the perfluoroalkyl group may be substituted with a hydrogen atom or a chlorine atom.
The carbon chain having an etheric oxygen atom in the ether bond-containing perfluoroalkyl group may be linear or branched.
In the component (A), the fluorine-containing alkyl group present in the molecule has 5 or less carbon atoms. That is, the component (A) has neither a perfluoroalkyl group having 6 or more carbon atoms nor an ether bond-containing perfluoroalkyl group having 6 or more carbon atoms. The lower limit of the number of carbon atoms of the fluorine-containing alkyl group is not particularly limited, but is preferably 4 or more from the viewpoint of surface tension reducing ability. The number of carbon atoms is more preferably 4 or 5.
化合物(A1)は、−COOHまたは−C(CF2Z1)(CF2Z2)OHを有する。上記Z1、Z2はそれぞれ、H、F、Cl、またはCF3である。
(A)成分において、−COOHおよび−C(CF2Z1)(CF2Z2)OHのOH基は塩を形成していてもよい。具体的には該酸性OH基が塩を形成して−OA2となっていてもよい。
A2はアルカリ金属、NH4、有機アミンから誘導される一価基、または第四級アンモニウム基を示す。アルカリ金属としては、リチウム、ナトリウム、カリウム等が挙げられる。これらの中でも、A2は有機アミンから誘導される一価基、または第四級アンモニウム基がより好ましい。The compound (A1) has —COOH or —C (CF 2 Z 1 ) (CF 2 Z 2 ) OH. Z 1 and Z 2 are each H, F, Cl, or CF 3 .
In the component (A), the —OH group of —COOH and —C (CF 2 Z 1 ) (CF 2 Z 2 ) OH may form a salt. Specifically acidic OH group may be a -OA 2 to form a salt.
A 2 represents an alkali metal, NH 4 , a monovalent group derived from an organic amine, or a quaternary ammonium group. Examples of the alkali metal include lithium, sodium, and potassium. Among these, A 2 is more preferably a monovalent group derived from an organic amine or a quaternary ammonium group.
[化合物(A1)]
上記一般式(I)で表される化合物(A1)において、「R1−O−(R2−O)n−R3−」が「エーテル結合含有パーフルオロアルキル基」に相当する。
上記一般式(I)において、R1はパーフルオロアルキル基であり、直鎖状であってもよく分岐状であってもよい。R1は、末端のフッ素原子が水素原子または塩素原子で置換されていてもよい。R1としてC4F9−、C3F7−、C2F5−、CF3−が好ましく、C2F5、C3F7がより好ましい。
R2及びR3はそれぞれ独立に、直鎖状または分岐状のパーフルオロアルキレン基である。R2は−CF2CF2−、−CF2CF(CF3)−が好ましく、R3は−CF2CF2−、−CF2−が好ましい。
R1、R2及びR3の炭素数の合計は5以下であり、2〜5が好ましく、4または5がより好ましい。ただし、一般式(I)中のX1が−C(CF2Z1)(CF2Z2)OHである場合は、R1、R2及びR3の炭素数の合計は4または5が好ましい。
一般式(I)中のnは0または1以上の整数であり、0または1〜3の整数が好ましく、より好ましくは0、1、または2である。
化合物(A1)は水溶性に優れるため、これを含有する反射防止コーティング用組成物は均一な混合状態となる。よって、得られる反射防止膜も均一な組成、均一な膜厚となる。 さらに、化合物(A1)は、アルカリで塩化しない場合であっても水にある程度溶解するという利点を有する。反射防止膜の重要な特性として、下層のレジストとの酸性度のマッチングがある。反射防止膜の酸性度が高すぎる場合は、反射防止膜側の酸性成分がレジスト層に浸透し、過剰な膜減り、パターンのラウンドトップ化(矩形の頭の部分が過剰に現像されて削れてしまい、丸くなる。)を招く。逆に酸性度が低すぎる場合は、レジスト層の酸性成分が反射防止膜へ移動し、パターンのTトップ化(矩形の頭の部分の現像が不十分で、除きたい部分が残ってしまう。)を招く。
化合物(A1)を用いる場合は、必ずしも塩化して用いる必要がないので、反射防止膜の酸性度を調整しやすく、種々のレジスト層のコーティングに使用できる。[Compound (A1)]
In the compound (A1) represented by the general formula (I), “R 1 —O— (R 2 —O) n —R 3 —” corresponds to “an ether bond-containing perfluoroalkyl group”.
In the general formula (I), R 1 is a perfluoroalkyl group, which may be linear or branched. In R 1 , the terminal fluorine atom may be substituted with a hydrogen atom or a chlorine atom. C 4 F 9 as R 1 -, C 3 F 7 -, C 2 F 5 -, CF 3 - are preferred, C 2 F 5, C 3 F 7 is preferred.
R 2 and R 3 are each independently a linear or branched perfluoroalkylene group. R 2 is -CF 2 CF 2 -, - CF 2 CF (CF 3) - are preferred, R 3 is -CF 2 CF 2 -, - CF 2 - are preferred.
The total number of carbon atoms of R 1 , R 2 and R 3 is 5 or less, preferably 2 to 5, and more preferably 4 or 5. However, when X 1 in the general formula (I) is —C (CF 2 Z 1 ) (CF 2 Z 2 ) OH, the total number of carbon atoms of R 1 , R 2 and R 3 is 4 or 5. preferable.
N in the general formula (I) is 0 or an integer of 1 or more, preferably 0 or an integer of 1 to 3, more preferably 0, 1 or 2.
Since the compound (A1) is excellent in water solubility, the composition for antireflection coating containing it is in a uniform mixed state. Therefore, the obtained antireflection film also has a uniform composition and a uniform film thickness. Further, the compound (A1) has an advantage that it is dissolved to some extent in water even when it is not salified with an alkali. An important characteristic of the antireflection film is matching of acidity with the underlying resist. If the acidity of the antireflective film is too high, the acid component on the antireflective film will penetrate into the resist layer, reducing the excessive film, making the pattern round-topped (the rectangular head is excessively developed and scraped off) Will be rounded.) On the other hand, if the acidity is too low, the acid component of the resist layer moves to the antireflection film, and the pattern becomes T-topped (the development of the rectangular head portion is insufficient and the portion to be removed remains). Invite.
When the compound (A1) is used, it is not always necessary to use it by chlorination. Therefore, it is easy to adjust the acidity of the antireflection film, and it can be used for coating various resist layers.
化合物(A1)の好ましい例として下記一般式(III)で表される化合物(A11)が挙げられる。
M1CF2CF2O(CF2CF2O)pCF2COOA1 …(III)
(式中、M1はフッ素原子、水素原子または塩素原子を示し、A1は水素原子、アルカリ金属、NH4、有機アミンから誘導される一価基、または第四級アンモニウム基を示し、pは0または1である。)
一般式(III)において、M1はフッ素原子、水素原子または塩素原子であり、フッ素原子が好ましい。
A1としてのアルカリ金属、NH4、または有機アミンから誘導される一価基、または第四級アンモニウム基は、好ましい態様も含めて上記A2と同様である。A1は好ましくは水素原子である。
pは0または1であり、好ましくは1である。
本発明の反射防止コーティング用組成物において、含フッ素界面活性剤(A)として上記一般式(III)で表される化合物(A11)を用いることが好ましい。Preferred examples of compound (A1) include compound (A11) represented by the following general formula (III).
M 1 CF 2 CF 2 O (CF 2 CF 2 O) p CF 2 COOA 1 (III)
(In the formula, M 1 represents a fluorine atom, a hydrogen atom or a chlorine atom, A 1 represents a hydrogen atom, an alkali metal, NH 4 , a monovalent group derived from an organic amine, or a quaternary ammonium group; Is 0 or 1.)
In the general formula (III), M 1 is a fluorine atom, a hydrogen atom or a chlorine atom, preferably a fluorine atom.
A monovalent group derived from an alkali metal, NH 4 , or organic amine as A 1 , or a quaternary ammonium group is the same as A 2 above, including preferred embodiments. A 1 is preferably a hydrogen atom.
p is 0 or 1, preferably 1.
In the composition for antireflection coating of the present invention, it is preferable to use the compound (A11) represented by the general formula (III) as the fluorine-containing surfactant (A).
本発明の反射防止コーティング用組成物において、含フッ素界面活性剤(A)は1種単独でもよく、2種以上を併用してもよい。
含フッ素界面活性剤(A)の使用量は、反射防止コーティング用組成物の表面張力が所望の範囲となるように設定することが好ましい。反射防止コーティング用組成物の表面張力の好ましい範囲は塗布法にもよるが、いずれの塗布法においても、反射防止コーティング用組成物の表面張力が高すぎても低すぎても良好な塗布性が得られない。
例えば、反射防止コーティング用組成物における含フッ素界面活性剤(A)の含有量は0.001〜10質量%の範囲が好ましく、0.05〜5質量%がより好ましく、0.1〜1質量%がさらに好ましい。In the composition for antireflection coating of the present invention, the fluorine-containing surfactant (A) may be used alone or in combination of two or more.
The amount of the fluorine-containing surfactant (A) used is preferably set so that the surface tension of the antireflection coating composition falls within a desired range. The preferred range of the surface tension of the antireflection coating composition depends on the coating method, but in any coating method, good coating properties can be obtained whether the surface tension of the antireflection coating composition is too high or too low. I can't get it.
For example, the content of the fluorine-containing surfactant (A) in the antireflection coating composition is preferably in the range of 0.001 to 10% by mass, more preferably 0.05 to 5% by mass, and 0.1 to 1% by mass. % Is more preferable.
<水溶性ポリマー(B)>
[水溶性含フッ素重合体(B1)]
[重合単位(b1)]
水溶性ポリマー(B)(以下、単に(B)成分ということもある。)は、反射防止膜の成膜成分として公知の水溶性ポリマーを使用できる。
(B)成分として、下記一般式(IV)で示される重合単位(b1)を有する水溶性含フッ素重合体(B1)が好ましい。<Water-soluble polymer (B)>
[Water-soluble fluoropolymer (B1)]
[Polymerized unit (b1)]
As the water-soluble polymer (B) (hereinafter sometimes simply referred to as the component (B)), a known water-soluble polymer can be used as a film forming component of the antireflection film.
As the component (B), a water-soluble fluoropolymer (B1) having a polymer unit (b1) represented by the following general formula (IV) is preferable.
(式中、Y1、Y2はそれぞれ独立に水素原子、フッ素原子または塩素原子を示し、Y3は水素原子、フッ素原子、塩素原子、メチル基またはトリフルオロメチル基を示し、Qはエーテル結合またはエステル結合を示し、R5、R6及びR7はそれぞれ独立に、炭素数6以下の直鎖状または分岐状のパーフルオロアルキレン基を示し、X3は塩を形成していてもよい酸性OH基を有する官能基を示し、a、bはそれぞれ独立に0または1以上の整数を示す。)Wherein Y 1 and Y 2 each independently represent a hydrogen atom, a fluorine atom or a chlorine atom, Y 3 represents a hydrogen atom, a fluorine atom, a chlorine atom, a methyl group or a trifluoromethyl group, and Q represents an ether bond Or an ester bond, R 5 , R 6 and R 7 each independently represents a linear or branched perfluoroalkylene group having 6 or less carbon atoms, and X 3 may be an acid which may form a salt. A functional group having an OH group, a and b each independently represent 0 or an integer of 1 or more.)
一般式(IV)において、Y1、Y2はそれぞれ独立に水素原子、フッ素原子または塩素原子を示す。好ましくはY1、Y2の両方がフッ素原子である。
Y3は水素原子、フッ素原子、塩素原子、メチル基またはトリフルオロメチル基を示し、好ましくはフッ素原子である。
Qはエーテル結合またはエステル結合を示し、好ましくはエーテル結合である。
R5、R6及びR7はそれぞれ独立に、炭素数6以下の直鎖状または分岐状のパーフルオロアルキレン基を示す。R5、R6及びR7の炭素数はそれぞれ1〜3が好ましく、2または3がより好ましい。R5、R6及びR7の好ましい例としては、−C2F4−、−C3F6−、−CF2−CF(CF3)−等が挙げられる。
a、bはそれぞれ独立に0または1以上の整数を示す。a、bはそれぞれ好ましくは0または1〜3の整数である。aとbの合計が0または1〜3である事が好ましい。In the general formula (IV), Y 1 and Y 2 each independently represent a hydrogen atom, a fluorine atom or a chlorine atom. Preferably both Y 1 and Y 2 are fluorine atoms.
Y 3 represents a hydrogen atom, a fluorine atom, a chlorine atom, a methyl group or a trifluoromethyl group, preferably a fluorine atom.
Q represents an ether bond or an ester bond, and preferably an ether bond.
R 5 , R 6 and R 7 each independently represents a linear or branched perfluoroalkylene group having 6 or less carbon atoms. R 5, the number of carbon atoms of R 6 and R 7 are 1 to 3 each preferably 2 or 3 is more preferable. Preferable examples of R 5 , R 6 and R 7 include —C 2 F 4 —, —C 3 F 6 —, —CF 2 —CF (CF 3 ) — and the like.
a and b each independently represent an integer of 0 or 1 or more. a and b are each preferably an integer of 0 or 1-3. It is preferable that the sum of a and b is 0 or 1-3.
一般式(IV)において、X3は酸性OH基を有する官能基を示す。酸性OH基を有する官能基としては、−COOH、−SO3H、−OP(=O)(OH)2、または−C(CF2Z1)(CF2Z2)OHが好ましい。上記Z1、Z2はそれぞれ、H、F、Cl、またはCF3である。特には、−COOH、−SO3H、−C(CF2Z1)(CF2Z2)OHが好ましい。また、X3は塩を形成していてもよいが、塩を形成していないことが好ましい。In the general formula (IV), X 3 represents a functional group having an acidic OH group. As the functional group having an acidic OH group, —COOH, —SO 3 H, —OP (═O) (OH) 2 , or —C (CF 2 Z 1 ) (CF 2 Z 2 ) OH is preferable. Z 1 and Z 2 are each H, F, Cl, or CF 3 . In particular, —COOH, —SO 3 H, and —C (CF 2 Z 1 ) (CF 2 Z 2 ) OH are preferable. X 3 may form a salt, but preferably does not form a salt.
一般式(IV)で示される重合単位(b1)としては、下記一般式(VI)で表される重合単位(b11)が好ましい。 As the polymer unit (b1) represented by the general formula (IV), a polymer unit (b11) represented by the following general formula (VI) is preferable.
−CF2CF[O(CF2CF(CF3)O)s(CF2)tX4]− …(VI)
(式中、sは0〜5の整数を示し、tは1〜5の整数を示し、X4は−COOH、−SO3H、または−C(CF2Z1)(CF2Z2)OHを示し、Z1、Z2はそれぞれ、H、F、ClまたはCF3である。)
該重合単位(b11)を形成する含フッ素単量体としては、
CF2=CF[O(CF2CF(CF3)O)s’(CF2)t’X4‘]が好ましい。
該単量体においてs’は0〜3の整数が好ましく、t’は1〜3が好ましい。X4’は一般式(VI)におけるX4と同じ基、または加水分解反応を経てX4となる基である。 -CF 2 CF [O (CF 2 CF (CF 3) O) s (CF 2) t X 4] - ... (VI)
(In the formula, s represents an integer of 0 to 5, t represents an integer of 1 to 5, and X 4 represents —COOH, —SO 3 H, or —C (CF 2 Z 1 ) (CF 2 Z 2 ). OH represents Z 1 and Z 2 are each H, F, Cl or CF 3 )
As the fluorine-containing monomer forming the polymerized unit (b11),
CF 2 = CF [O (CF 2 CF (CF 3 ) O) s ′ (CF 2 ) t ′ X 4 ′ ] is preferred.
In the monomer, s ′ is preferably an integer of 0 to 3, and t ′ is preferably 1 to 3. X 4 ′ is the same group as X 4 in formula (VI), or a group that becomes X 4 through a hydrolysis reaction.
一般式(VI)で表される重合単位(b11)の好ましい例として、下記の重合単位が挙げられる。
−[CF2CF(OCF2CF2CF2COOH)]−、
−[CF2CF(OCF2CF(CF3)OCF2CF2COOH)]−、
−[CF2CF(OCF2CF(CF3)OCF2CF2CF2COOH)]−、
−[CF2CF(OCF2CF2CF2OCF2CF2COOH)]−、
−[CF2CF(OCF2CF(CF3)OCF2CF2SO3H)]−。Preferable examples of the polymer unit (b11) represented by the general formula (VI) include the following polymer units.
- [CF 2 CF (OCF 2 CF 2 CF 2 COOH)] -,
- [CF 2 CF (OCF 2 CF (CF 3) OCF 2 CF 2 COOH)] -,
- [CF 2 CF (OCF 2 CF (CF 3) OCF 2 CF 2 CF 2 COOH)] -,
- [CF 2 CF (OCF 2 CF 2 CF 2 OCF 2 CF 2 COOH)] -,
- [CF 2 CF (OCF 2 CF (CF 3) OCF 2 CF 2 SO 3 H)] -.
本発明において、水溶性含フッ素重合体(B1)を構成する全重合単位のうち、重合単位(b1)が占める割合は、20モル%以上が好ましく、60モル%以上がより好ましく、100質量%でもよい。上記範囲の下限値未満であると、含フッ素重合体の水溶性が低下する。 In the present invention, the proportion of the polymerized units (b1) in the total polymerized units constituting the water-soluble fluoropolymer (B1) is preferably 20 mol% or more, more preferably 60 mol% or more, and 100 mass%. But you can. If it is less than the lower limit of the above range, the water solubility of the fluoropolymer will decrease.
[重合単位(b2)]
水溶性含フッ素重合体(B1)は重合単位(b1)以外の重合単位を有していてもよい。例えば下記一般式(VII)で表される重合単位(b2)を有していてもよい。
−CF2CF[(CF2)uX5]− …(VII)
(式中、uは1〜10の整数を示し、X5は−COOH、−SO3H、または−C(CF2Z1)(CF2Z2)OHを示し、Z1、Z2はそれぞれ、H、F、ClまたはCF3である。)
該重合単位(b2)を形成する含フッ素単量体としては、CF2=CF[(CF2)u’X5’]が好ましい。該単量体においてu’は1〜5が好ましい。X5’は一般式(VII)におけるX5と同じ基、または加水分解反応を経てX5となる基である。[Polymerized unit (b2)]
The water-soluble fluoropolymer (B1) may have a polymer unit other than the polymer unit (b1). For example, you may have the polymerization unit (b2) represented by the following general formula (VII).
-CF 2 CF [(CF 2) u X 5] - ... (VII)
(In the formula, u represents an integer of 1 to 10, X 5 represents —COOH, —SO 3 H, or —C (CF 2 Z 1 ) (CF 2 Z 2 ) OH, and Z 1 and Z 2 represent H, F, Cl or CF 3 respectively.)
As the fluorine-containing monomer forming the polymerized unit (b2), CF 2 ═CF [(CF 2 ) u ′ X 5 ′ ] is preferable. In the monomer, u ′ is preferably 1 to 5. X 5 ′ is the same group as X 5 in formula (VII), or a group that becomes X 5 through a hydrolysis reaction.
[重合単位(b3)]
水溶性含フッ素重合体(B1)は、主鎖が重合単位(b1)と同じであって、重合単位(b1)、(b2)に含まれない重合単位(b3)を有していてもよい。
該重合単位(b3)として、例えば下記の含フッ素単量体の二重結合が開裂して形成される重合単位が好ましい。
CF2=CF2、
CF2=CFCF3、
CF2=CF(CF2)kCF3
CF2=CH2、
CF3CH=CH(CF2)kCF3、
CH2=CH[(CF2)kCF3]、
CH2=CHCH2(CF2)kCF3
CF2=CF[O(CF2)kCF3]、
CF2=CF[O[CF2CF(CF3)O]lCF2CF2CF3]等。
上記においてkは1〜10の整数、lは1〜3の整数を示す。これらの中でも特に、CF2=CF2、CF2=CFCF3等が好ましい。[Polymerized unit (b3)]
The water-soluble fluorine-containing polymer (B1) may have a polymer unit (b3) whose main chain is the same as the polymer unit (b1) and is not included in the polymer units (b1) and (b2). .
As the polymerization unit (b3), for example, a polymerization unit formed by cleavage of a double bond of the following fluorine-containing monomer is preferable.
CF 2 = CF 2 ,
CF 2 = CFCF 3 ,
CF 2 = CF (CF 2 ) k CF 3
CF 2 = CH 2 ,
CF 3 CH═CH (CF 2 ) k CF 3 ,
CH 2 = CH [(CF 2 ) k CF 3],
CH 2 = CHCH 2 (CF 2 ) k CF 3
CF 2 = CF [O (CF 2 ) k CF 3 ],
CF 2 = CF [O [CF 2 CF (CF 3 ) O] 1 CF 2 CF 2 CF 3 ] and the like.
In the above, k represents an integer of 1 to 10, and l represents an integer of 1 to 3. Among these, CF 2 = CF 2 , CF 2 = CFCF 3 and the like are particularly preferable.
[重合単位(b4)]
水溶性含フッ素重合体(B1)は、主鎖にエーテル性の酸素原子を有する重合単位(b4)を含有していてもよい。かかる重合単位(b4)としては、下記の重合単位が好ましい。
−CF2CF(CF3)O−、
−(CF2)k’O−、
上記においてk’は1〜3の整数を示す。[Polymerized unit (b4)]
The water-soluble fluoropolymer (B1) may contain a polymer unit (b4) having an etheric oxygen atom in the main chain. As the polymerized unit (b4), the following polymerized units are preferable.
-CF 2 CF (CF 3) O- ,
- (CF 2) k 'O- ,
In the above, k ′ represents an integer of 1 to 3.
水溶性含フッ素重合体(B1)の質量平均分子量(ゲルパーミネーションクロマトグラフィー法によるPMMA換算、以下同様。)は、良好な水溶性が得られることから5万以下が好ましく、3万以下がより好ましい。良好な造膜性が得られる点からは、質量平均分子量は1千以上が好ましい。 The mass average molecular weight of the water-soluble fluoropolymer (B1) (converted to PMMA by gel permeation chromatography method, the same shall apply hereinafter) is preferably 50,000 or less and more preferably 30,000 or less because good water solubility is obtained. preferable. The mass average molecular weight is preferably 1,000 or more from the viewpoint of obtaining good film-forming properties.
水溶性含フッ素重合体(B1)の製造方法としては、特に限定はないが、以下の方法(i)または方法(ii)が好ましく挙げられる。
(i)「酸性OH基を有する官能基」に変換可能な前駆官能基を有する含フッ素単量体を重合した後、該前駆官能基を「酸性OH基を有する官能基」に変換する方法。
(ii)含フッ素単量体を重合した後、該重合体の一部に「酸性OH基を有する官能基」を導入する方法。
方法(i)の例としては、CF2=CF[O(CF2CF(CF3)O)s’(CF2)t’COOCH3](s’、t’は前記と同じ意味を示す。)を重合した後、−COOCH3部分を加水分解する方法、CF2=CF[O(CF2CF(CF3)O)s’(CF2)t’SO2F](s’、t’は前記と同じ意味を示す。)を重合した後、−SO2F部分を加水分解する方法等が好ましい。
重合方法としては、特に限定はないが、上記含フッ素単量体に重合開始剤を加えて加熱する重合反応が好ましい。Although there is no limitation in particular as a manufacturing method of a water-soluble fluorine-containing polymer (B1), the following method (i) or method (ii) is mentioned preferably.
(I) A method of polymerizing a fluorine-containing monomer having a precursor functional group that can be converted into “functional group having acidic OH group”, and then converting the precursor functional group to “functional group having acidic OH group”.
(Ii) A method of introducing a “functional group having an acidic OH group” into a part of the polymer after polymerizing the fluorine-containing monomer.
Examples of methods (i), CF 2 = CF [O (CF 2 CF (CF 3) O) s '(CF 2) t' COOCH 3] (s ', t' are as defined above. ), Followed by hydrolysis of the —COOCH 3 moiety, CF 2 ═CF [O (CF 2 CF (CF 3 ) O) s ′ (CF 2 ) t ′ SO 2 F] (s ′, t ′ Represents the same meaning as described above), and a method of hydrolyzing the —SO 2 F moiety after polymerization is preferred.
The polymerization method is not particularly limited, but a polymerization reaction in which a polymerization initiator is added to the fluorine-containing monomer and heated is preferable.
重合開始剤としては、過酸化物、アゾ化合物等が好ましい。
過酸化物としては、パーオキシケタール類、ジアシルパーオキシド類、パーオキシカーボネート類、パーオキシエステル類、過硫酸アンモニウム、過硫酸カリウム等が好ましく挙げられる。
アゾ化合物としては、アゾニトリル類、アゾアミド類、環状アゾアミド類、アゾアミジン類等が好ましく挙げられる。
重合開始剤の使用量は、重合反応に用いる単量体のモル数の合計に対して0.01〜10モル%であることが好ましい。
また、重合反応においては、連鎖移動剤を用いてもよい。重合反応に使用する連鎖移動剤の使用量は、単量体のモル数の合計に対して0.01〜10モル%であることが好ましい。
重合反応においては、媒体を使用してもよく、使用しなくてもよい。使用する場合には、含フッ素単量体が媒体に溶解した状態または分散した状態で重合反応を行うのが好ましい。媒体としては、水、含フッ素溶剤等が好ましく用いられる。As the polymerization initiator, peroxides, azo compounds and the like are preferable.
Preferred examples of the peroxide include peroxyketals, diacyl peroxides, peroxycarbonates, peroxyesters, ammonium persulfate, and potassium persulfate.
Preferred examples of the azo compound include azonitriles, azoamides, cyclic azoamides, azoamidines, and the like.
It is preferable that the usage-amount of a polymerization initiator is 0.01-10 mol% with respect to the total number of moles of the monomer used for a polymerization reaction.
In the polymerization reaction, a chain transfer agent may be used. The amount of the chain transfer agent used for the polymerization reaction is preferably 0.01 to 10 mol% based on the total number of moles of monomers.
In the polymerization reaction, a medium may or may not be used. When used, the polymerization reaction is preferably performed in a state where the fluorine-containing monomer is dissolved or dispersed in the medium. As the medium, water, a fluorine-containing solvent or the like is preferably used.
[他の水溶性ポリマー(B2)]
本発明の反射防止コーティング用組成物に含まれる水溶性ポリマー(B)として、フッ素を含まない他の水溶性ポリマー(B2)を用いてもよい。
該他の水溶性ポリマー(B2)としては、公知の水溶性ポリマーを適宜使用できる。具体例としてはポリビニルピロリドン、ポリアクリル酸、ポリビニルアルコール、水溶性ポリシロキサン、多糖類等が好ましく挙げられる。これらは1種を単独で用いてもよく、2種以上を併用してもよい。[Other water-soluble polymer (B2)]
As the water-soluble polymer (B) contained in the composition for antireflection coating of the present invention, other water-soluble polymer (B2) not containing fluorine may be used.
As the other water-soluble polymer (B2), a known water-soluble polymer can be appropriately used. Specific examples include polyvinyl pyrrolidone, polyacrylic acid, polyvinyl alcohol, water-soluble polysiloxane, polysaccharides and the like. These may be used alone or in combination of two or more.
本発明の反射防止コーティング用組成物に含まれる水溶性ポリマー(B)は、水溶性含フッ素重合体(B1)でもよく、他の水溶性ポリマー(B2)でもよく、両者を併用してもよい。少なくとも水溶性含フッ素重合体(B1)を用い、造膜性を向上させるために、必要に応じて他の水溶性ポリマー(B2)を併用することが好ましい。
本発明の反射防止コーティング用組成物に含まれる水溶性ポリマー(B)のうち、水溶性含フッ素重合体(B1)が占める割合は50質量%以上が好ましく、70質量%以上がより好ましく、100質量%でもよい。上記範囲の下限値未満であると、屈折率の低減効果が低下する。
本発明の反射防止コーティング用組成物における水溶性ポリマー(B)の含有量は、該(B)成分が溶解でき、かつコーティング時に所望の厚さの膜を形成できる範囲であればよい。具体的には0.1〜20質量%が好ましく、1〜10質量%がより好ましく、3〜7質量%がさらに好ましい。The water-soluble polymer (B) contained in the composition for antireflection coating of the present invention may be a water-soluble fluoropolymer (B1), another water-soluble polymer (B2), or a combination of both. . In order to improve the film-forming property using at least the water-soluble fluoropolymer (B1), it is preferable to use another water-soluble polymer (B2) in combination as necessary.
In the water-soluble polymer (B) contained in the antireflection coating composition of the present invention, the proportion of the water-soluble fluoropolymer (B1) is preferably 50% by mass or more, more preferably 70% by mass or more, and 100 It may be mass%. If it is less than the lower limit of the above range, the effect of reducing the refractive index is lowered.
The content of the water-soluble polymer (B) in the antireflective coating composition of the present invention may be within a range in which the component (B) can be dissolved and a film having a desired thickness can be formed during coating. Specifically, 0.1-20 mass% is preferable, 1-10 mass% is more preferable, and 3-7 mass% is further more preferable.
<水性媒体(C)>
水性媒体(C)は水および水溶性の有機溶媒から選ばれるものが好ましい。好ましくは水であり、水溶性の有機溶媒と水を併用してもよい。
水は、蒸留、イオン交換処理、フィルター処理、各種吸着処理等の処理により、有機不純物、金属イオン等が除去されたものが好ましい。
水溶性の有機溶媒としては、水に対して0.1質量%以上溶解する有機溶媒であれば特に制限はなく、例えば、メチルアルコール、エチルアルコール、イソプロピルアルコール、2−ブタノール、ヘキシレングリコール等のアルコール類;アセトン、メチルエチルケトン等のケトン類;酢酸メチル、酢酸エチル、乳酸エチル等のエステル類;ジメチルホルムアミド、ジメチルスルホキシド、メチルセロソルブ、セロソルブ、ブチルセロソルブ、セロソルブアセテート、アルキルセロソルブアセテート、ブチルカルビトール、カルビトールアセテート等の極性溶媒が挙げられる。これらのうちでもアルコール類が好ましい。
本発明の反射防止コーティング用組成物における水性媒体(C)の含有量は、(A)成分、(B)成分、および必要に応じて添加されるその他の成分を、各必要量含有させることができ、かつ全成分が溶解されるように設定される。水性媒体(C)の含有量は、例えば70〜99.9質量%が好ましく、95〜99質量%がより好ましい。<Aqueous medium (C)>
The aqueous medium (C) is preferably selected from water and a water-soluble organic solvent. Water is preferable, and a water-soluble organic solvent and water may be used in combination.
The water is preferably water from which organic impurities, metal ions and the like have been removed by treatments such as distillation, ion exchange treatment, filter treatment, and various adsorption treatments.
The water-soluble organic solvent is not particularly limited as long as it is an organic solvent that dissolves 0.1% by mass or more with respect to water, and examples thereof include methyl alcohol, ethyl alcohol, isopropyl alcohol, 2-butanol, and hexylene glycol. Alcohols; ketones such as acetone and methyl ethyl ketone; esters such as methyl acetate, ethyl acetate and ethyl lactate; dimethylformamide, dimethyl sulfoxide, methyl cellosolve, cellosolve, butyl cellosolve, cellosolve acetate, alkyl cellosolve acetate, butyl carbitol, carbitol Examples include polar solvents such as acetate. Of these, alcohols are preferred.
The content of the aqueous medium (C) in the composition for antireflective coating of the present invention may include (A) component, (B) component, and other necessary components added as necessary. And is set so that all components are dissolved. 70-99.9 mass% is preferable, for example, and, as for content of an aqueous medium (C), 95-99 mass% is more preferable.
<有機アミン(D)>
本発明の反射防止コーティング用組成物に、必要に応じて有機アミン(D)を含有させることができる。該有機アミン(D)を添加して反射防止コーティング用組成物のpHを調整することにより、フォトレジスト層とのインターミックスを抑制できる。
有機アミン(D)の具体例としては、NH3、テトラメチルアンモニウムヒドロキシド(N(CH3)4OH)、トリメチル−2−ヒドロキシエチルアンモニウムヒドロキシド、アルカノールアミン、アルキルアミン、芳香族アミンが挙げられる。
反射防止コーティング用組成物における有機アミン(D)の含有量は、反射防止コーティング用組成物のpHがレジストパターンの形成に好適な範囲となるように設定することができる。例えば、酸性官能基の総量の50〜95質量%の範囲内が好ましい。<Organic amine (D)>
If necessary, the composition for antireflection coating of the present invention can contain an organic amine (D). By adding the organic amine (D) and adjusting the pH of the composition for antireflection coating, intermixing with the photoresist layer can be suppressed.
Specific examples of the organic amine (D) include NH 3 , tetramethylammonium hydroxide (N (CH 3 ) 4 OH), trimethyl-2-hydroxyethylammonium hydroxide, alkanolamine, alkylamine, and aromatic amine. It is done.
The content of the organic amine (D) in the antireflection coating composition can be set so that the pH of the antireflection coating composition is in a range suitable for forming a resist pattern. For example, it is preferably within the range of 50 to 95% by mass of the total amount of acidic functional groups.
<その他の添加剤>
本発明の反射防止コーティング用組成物には、必要に応じて各種添加剤を含有させることができる。例えばフォトレジスト層に対する濡れ性およびレベリング性を向上させる目的で、(A)成分に含まれない公知の界面活性剤を添加してもよい。
該界面活性剤としては、ポリフルオロアルキル基とポリオキシエチレン基を有する化合物(3M社製、製品名:フロラード「FC−430」、「FC−4430」等)、アセチレングリコールおよびそれにポリオキシエチレンを付加した化合物(エアープロダクツ社製、製品名:「サーフィノール104」、「サーフィノール420」)、アルキルスルホン酸およびアルキルベンゼンスルホン酸類(例えば、日光ケミカルズ株式会社製、製品名:ニッコール「SBL−2N−27」等)、および水酸基を含みポリオキシエチレン基を含まない化合物(ポリグリセリン脂肪酸エステル等)等が好ましく挙げられる。<Other additives>
The antireflection coating composition of the present invention can contain various additives as required. For example, a known surfactant not included in the component (A) may be added for the purpose of improving the wettability and leveling property to the photoresist layer.
Examples of the surfactant include a compound having a polyfluoroalkyl group and a polyoxyethylene group (manufactured by 3M, product names: Florard “FC-430”, “FC-4430”, etc.), acetylene glycol and polyoxyethylene. Added compounds (product names: “Surfinol 104”, “Surfinol 420”), alkyl sulfonic acids and alkyl benzene sulfonic acids (for example, Nikko Chemicals, product name: Nikkor “SBL-2N-” manufactured by Air Products) 27 ”and the like, and a compound containing a hydroxyl group and not containing a polyoxyethylene group (polyglycerin fatty acid ester, etc.) are preferred.
<用途>
本発明の反射防止コーティング用組成物は、フォトレジスト用の反射防止膜を形成するための塗布液として好適である。具体的には、フォトレジストを用いたフォトリソグラフィによってパターンを形成するにあたり、フォトレジスト層の表面上に設けられる反射防止膜を形成する塗布液として好適である。フォトレジスト層についての制限はなく、g線用、i線用、KrF、ArF等のエキシマレーザ用の各フォトレジストに適用できる。<Application>
The composition for antireflection coating of the present invention is suitable as a coating solution for forming an antireflection film for photoresist. Specifically, when forming a pattern by photolithography using a photoresist, it is suitable as a coating solution for forming an antireflection film provided on the surface of the photoresist layer. There is no restriction | limiting about a photoresist layer, It can apply to each photoresist for excimer lasers, such as for g line | wire, i line | wire, KrF, and ArF.
<反射防止膜の形成方法>
本発明の反射防止コーティング用組成物を、反射防止膜を形成しようとする面上に塗布して塗膜を形成した後、該塗膜中の溶媒を除去することにより反射防止膜を形成することができる。塗布方法としては、塗膜の均一性および簡便性に優れることから、スピンコート法が好ましい。塗膜を形成した後、必要に応じてホットプレート、オーブン等を用いて加熱乾燥を行ってもよい。乾燥条件は、例えばホットプレートの場合70〜100℃で30〜180秒間が好ましい。
反射防止膜が、フォトリソグラフィ工程における露光時の反射を防止することを目的とするものである場合、該反射防止膜の厚さは、公知の反射防止理論によって設定すればよい。具体的には「(露光波長)/(4×反射防止膜の屈折率)」の奇数倍とすることが、反射防止性能に優れることから好ましい。<Method for forming antireflection film>
The antireflection coating composition of the present invention is applied to the surface on which the antireflection film is to be formed to form a coating film, and then the solvent in the coating film is removed to form the antireflection film. Can do. As the coating method, the spin coat method is preferred because of excellent uniformity and simplicity of the coating film. After forming a coating film, you may heat-dry using a hotplate, oven, etc. as needed. For example, in the case of a hot plate, the drying conditions are preferably 70 to 100 ° C. and 30 to 180 seconds.
When the antireflection film is intended to prevent reflection at the time of exposure in the photolithography process, the thickness of the antireflection film may be set by a known antireflection theory. Specifically, an odd multiple of “(exposure wavelength) / (4 × refractive index of antireflection film)” is preferable because of excellent antireflection performance.
本発明の反射防止コーティング用組成物は、水溶性ポリマー(B)および水性媒体(C)に上記含フッ素界面活性剤(A)を添加することにより、表面張力を効果的に低下させて優れた塗布性能を実現することができる。また後述の実施例にも示されるように、含フッ素界面活性剤(A)は、従来の界面活性剤に比べて表面張力を低下させる効果が高いため、比較的少量の添加で良好な塗布性能を達成することができる。また含フッ素界面活性剤(A)自身がフッ素を含んでいるため屈折率が低く、反射防止コーティング用組成物に該含フッ素界面活性剤(A)を添加することによる、反射防止膜の屈折率の増大が防止される。さらに、含フッ素界面活性剤(A)は、含フッ素重合体と同様の酸性OH基を有するため、官能基同士の作用による凝集等の現象が起こりづらく、組成物溶液の保存安定性に優れる。
したがって本発明によれば、炭素数7以上のPFAS等、環境への影響の問題から使用が禁止される懸念のある化合物を使用せず、組成物の屈折率を悪化させること無く、コーティング液の表面張力を低下させ、高い塗布性能を有するコーティング組成物が得られる。The antireflection coating composition of the present invention is excellent in effectively reducing the surface tension by adding the above-mentioned fluorine-containing surfactant (A) to the water-soluble polymer (B) and the aqueous medium (C). Application performance can be realized. Further, as shown in the examples described later, the fluorine-containing surfactant (A) has a higher effect of lowering the surface tension as compared with the conventional surfactant, so that a good coating performance can be obtained with a relatively small amount of addition. Can be achieved. Further, since the fluorine-containing surfactant (A) itself contains fluorine, the refractive index is low, and the refractive index of the antireflection film is obtained by adding the fluorine-containing surfactant (A) to the composition for antireflection coating. Is prevented from increasing. Furthermore, since the fluorine-containing surfactant (A) has an acidic OH group similar to that of the fluorine-containing polymer, a phenomenon such as aggregation due to the action of functional groups hardly occurs, and the composition solution has excellent storage stability.
Therefore, according to the present invention, it is possible to use a coating solution without deteriorating the refractive index of the composition without using a compound such as PFAS having 7 or more carbon atoms, which may be prohibited from use due to the problem of environmental impact. A coating composition having a high coating performance can be obtained by reducing the surface tension.
特に水溶性ポリマー(B)として水溶性含フッ素重合体(B1)を用いると、該重合体(B1)はフッ素を含有するため自身の屈折率が低く、低屈折率の反射防止膜を形成するうえで好ましい。また重合体(B1)は酸性OH基を有するため反射防止膜は水溶性に優れたものとなる。したがって、フォトグラフィ工程で用いられる現像液に溶解し易いため、現像工程で反射防止膜を除去し易い。 In particular, when the water-soluble fluoropolymer (B1) is used as the water-soluble polymer (B), since the polymer (B1) contains fluorine, it has a low refractive index and forms an antireflection film having a low refractive index. In addition, it is preferable. Further, since the polymer (B1) has an acidic OH group, the antireflection film has excellent water solubility. Therefore, since it is easy to dissolve in the developer used in the photolithography process, the antireflection film is easily removed in the development process.
以下に実施例を用いて本発明をさらに詳しく説明するが、本発明はこれら実施例に限定されるものではない。
(製造例1:水溶性含フッ素重合体(B1)の合成)
前記方法(i)により、前記一般式(VI)で表される重合単位(b11)からなる重合体(B1)を製造した。
すなわち、撹拌機付き1.3Lオートクレーブの系内の空気を窒素で置換した後、CF2=CFOCF2CF2CF2COOCH3(以下、CVEと記す。)の1.18kg、および重合開始剤としてジイソプロピルパーオキシジカーボネートの5.30gを仕込み、窒素により内圧を0.1MPaとした。オートクレーブを加熱して内温を40℃とし、40℃にて12時間撹拌して重合反応を行った。撹拌終了後、未反応のCVEを留去して、CVEが重合した前駆重合体470gを得た。該前駆重合体の質量平均分子量をGPC法で測定したところ5×103であった。
得られた前駆重合体に水を加えて90℃まで昇温した後、90℃にて5時間撹拌して、CVE由来のメチルエステル基の加水分解を行った。次に、酢酸の10gを加えて90℃まで昇温した後、1時間撹拌して、水を加えることにより、前駆重合体のメチルエステル基のうちの95モル%以上が−COOHに変換された水溶性含フッ素重合体(B1)の水溶液を得た。該水溶液の不揮発分濃度は30質量%であった。Hereinafter, the present invention will be described in more detail using examples, but the present invention is not limited to these examples.
(Production Example 1: Synthesis of water-soluble fluoropolymer (B1))
By the method (i), a polymer (B1) composed of the polymer unit (b11) represented by the general formula (VI) was produced.
That is, after replacing the air in the system of the 1.3 L autoclave with a stirrer with nitrogen, 1.18 kg of CF 2 = CFOCF 2 CF 2 CF 2 COOCH 3 (hereinafter referred to as CVE), and the polymerization initiator 5.30 g of diisopropyl peroxydicarbonate was charged, and the internal pressure was adjusted to 0.1 MPa with nitrogen. The autoclave was heated to an internal temperature of 40 ° C. and stirred at 40 ° C. for 12 hours to conduct a polymerization reaction. After the stirring, unreacted CVE was distilled off to obtain 470 g of a precursor polymer polymerized by CVE. It was 5 * 10 < 3 > when the mass mean molecular weight of this precursor polymer was measured by GPC method.
Water was added to the obtained precursor polymer and the temperature was raised to 90 ° C., followed by stirring at 90 ° C. for 5 hours to hydrolyze a methyl ester group derived from CVE. Next, 10 g of acetic acid was added and the temperature was raised to 90 ° C., followed by stirring for 1 hour and adding water, whereby 95 mol% or more of the methyl ester groups of the precursor polymer were converted to —COOH. An aqueous solution of the water-soluble fluoropolymer (B1) was obtained. The non-volatile content concentration of the aqueous solution was 30% by mass.
(実施例1)
製造例1で得られた、水溶性含フッ素重合体(B1)の水溶液を水で希釈し、下記式(III−1)で表される含フッ素界面活性剤(A11−1)を加えて混合することにより反射防止コーティング用組成物を得た。該反射防止コーティング用組成物における、水溶性含フッ素重合体(B1)の含有量(単位:質量%)および界面活性剤(A11−1)の含有量(単位:質量%)を表1に示す。
CF3CF2OCF2CF2OCF2COOH …(III−1)Example 1
The aqueous solution of the water-soluble fluorine-containing polymer (B1) obtained in Production Example 1 is diluted with water, and the fluorine-containing surfactant (A11-1) represented by the following formula (III-1) is added and mixed. By doing so, a composition for antireflection coating was obtained. Table 1 shows the content (unit: mass%) of the water-soluble fluoropolymer (B1) and the content of the surfactant (A11-1) (unit: mass%) in the antireflection coating composition. .
CF 3 CF 2 OCF 2 CF 2 OCF 2 COOH (III-1)
(実施例2〜4)
実施例1において、反射防止コーティング用組成物における、水溶性含フッ素重合体(B1)の含有量および含フッ素界面活性剤(A11−1)の含有量を、表1に示すとおりに変更したほかは実施例1と同様にして反射防止コーティング用組成物を調製した。(Examples 2 to 4)
In Example 1, the content of the water-soluble fluoropolymer (B1) and the content of the fluorosurfactant (A11-1) in the antireflection coating composition were changed as shown in Table 1. Prepared an antireflective coating composition in the same manner as in Example 1.
(比較例1−1)
実施例1において、含フッ素界面活性剤を下記式(II−1)で表される含フッ素界面活性剤(A2−1)に変更したほかは実施例1と同様にして反射防止コーティング用組成物を調製した。
CF3(CF2)4COOH …(II−1)(Comparative Example 1-1)
In Example 1, the composition for antireflection coating was carried out in the same manner as in Example 1 except that the fluorine-containing surfactant was changed to the fluorine-containing surfactant (A2-1) represented by the following formula (II-1). Was prepared.
CF 3 (CF 2 ) 4 COOH (II-1)
(比較例1−2〜1−4)
比較例1−1において、反射防止コーティング用組成物における、水溶性含フッ素重合体(B1)の含有量および含フッ素界面活性剤(A2−1)の含有量を、表1に示すとおりに変更したほかは比較例1−1と同様にして反射防止コーティング用組成物を調製した。(Comparative Examples 1-2 to 1-4)
In Comparative Example 1-1, the content of the water-soluble fluoropolymer (B1) and the content of the fluorosurfactant (A2-1) in the antireflection coating composition were changed as shown in Table 1. In the same manner as in Comparative Example 1-1, an antireflection coating composition was prepared.
(比較例1)
実施例1において、含フッ素界面活性剤(A11−1)に代えて、市販の非フッ素系界面活性剤であるニッコール SBL−2N−27(製品名、日光ケミカルズ株式会社製)を用いた他は実施例1と同様にして反射防止コーティング用組成物を調製した。
(比較例2〜4)
比較例1において、水溶性含フッ素重合体(B1)の含有量および非フッ素系界面活性剤(ニッコール)の含有量を、表1に示すとおりに変更したほかは比較例1と同様にして反射防止コーティング用組成物を調製した。(Comparative Example 1)
In Example 1, instead of the fluorine-containing surfactant (A11-1), a commercially available non-fluorinated surfactant, Nikkor SBL-2N-27 (product name, manufactured by Nikko Chemicals Co., Ltd.) was used. An antireflection coating composition was prepared in the same manner as in Example 1.
(Comparative Examples 2 to 4)
Reflection was carried out in the same manner as in Comparative Example 1 except that the content of the water-soluble fluoropolymer (B1) and the content of the non-fluorinated surfactant (Nikkor) were changed as shown in Table 1. A composition for prevention coating was prepared.
(比較例5)
実施例3において、含フッ素界面活性剤(A11−1)を添加しない他は、実施例1と同様にして反射防止コーティング用組成物を調製した。
(比較例6〜8)
実施例1、3、4において、含フッ素界面活性剤(A11−1)に代えて、特開2004−37887号公報(上記特許文献7)の実施例1〜4で用いられているドデシルベンゼンスルホン酸を表1に示す含有量で用いた。その他は実施例1、3、4とそれぞれ同様にして反射防止コーティング用組成物を調製した。(Comparative Example 5)
In Example 3, an antireflection coating composition was prepared in the same manner as in Example 1 except that the fluorine-containing surfactant (A11-1) was not added.
(Comparative Examples 6-8)
In Examples 1, 3, and 4, in place of the fluorine-containing surfactant (A11-1), dodecylbenzenesulfone used in Examples 1 to 4 of JP-A-2004-37887 (Patent Document 7). The acid was used in the content shown in Table 1. Otherwise, the composition for antireflection coating was prepared in the same manner as in Examples 1, 3, and 4, respectively.
<評価方法>
(表面張力の評価)
上記実施例および比較例でそれぞれ調製した反射防止コーティング用組成物について、表面張力計 ESB-V(製品名、協和化学社製)にて表面張力を測定した。結果を表1に示す。<Evaluation method>
(Evaluation of surface tension)
About the composition for antireflection coatings prepared in the above examples and comparative examples, the surface tension was measured with a surface tension meter ESB-V (product name, manufactured by Kyowa Chemical Co., Ltd.). The results are shown in Table 1.
(塗布性・屈折率の評価)
上記実施例および比較例でそれぞれ調製した反射防止コーティング用組成物を、シリコンウエハー上にスピンコーターを用いて塗布した後、ホットプレートを用い、120℃で90秒間加熱乾燥して膜(反射防止膜)を得た。膜厚は水溶性含フッ素重合体(B1)の含有量が6質量%の場合は約100nm、3質量%の場合は約40nmとした。
得られた膜の外観を目視にて観察し、均一な膜が形成されているかどうかを評価した。結果を表1に示す。塗布液の表面張力が低くて膜に放射状のスピンコート跡が残った場合を「スピンコート跡」と記載し、塗布液の表面張力が高くて均一な膜にならずスジムラが生じた場合を「スジムラ」と記載した。
また得られた膜の屈折率を、エリプソメーターを用いて測定した。屈折率の測定はフォトリソグラフィ工程において一般的に用いられる露光波長である193nmと248nmについて行った。結果を表1に示す。
一般に、該露光波長におけるフォトレジストの屈折率は1.6〜1.8程度であり、フォトレジスト層上に設けられる反射防止膜の屈折率が、それ以下であると良好な反射防止機能が得られる。(Evaluation of coating properties and refractive index)
The antireflection coating composition prepared in each of the above Examples and Comparative Examples was applied onto a silicon wafer using a spin coater, and then heated and dried at 120 ° C. for 90 seconds using a hot plate to form a film (antireflection film). ) The film thickness was about 100 nm when the content of the water-soluble fluoropolymer (B1) was 6% by mass, and about 40 nm when the content was 3% by mass.
The appearance of the obtained film was visually observed to evaluate whether a uniform film was formed. The results are shown in Table 1. When the surface tension of the coating solution is low and radial spin coating marks remain on the film, it is referred to as `` spin coating marks '', and when the surface tension of the coating liquid is high and a uniform film is not formed, "Sujimura".
The refractive index of the obtained film was measured using an ellipsometer. The refractive index was measured at 193 nm and 248 nm, which are exposure wavelengths generally used in the photolithography process. The results are shown in Table 1.
In general, the refractive index of the photoresist at the exposure wavelength is about 1.6 to 1.8, and if the refractive index of the antireflection film provided on the photoresist layer is less than that, a good antireflection function can be obtained. It is done.
表1の結果より、実施例1〜4は、界面活性剤を添加しなかった比較例5と比べて表面張力が低下しており、従来の界面活性剤を添加した比較例1〜4と比べても、より少量の添加で表面張力が効果的に低下した。また実施例1〜4における膜の屈折率は比較例5とほぼ同等であった。このことから、実施例1〜4では、膜の屈折率を悪化させることなく、塗布液の表面張力を効果的に低下させることができ、これにより高い塗布性能が得られることがわかる。一方、従来の界面活性剤(ニッコール)を良好な塗布性能が得られる程度に多く添加した比較例2では、膜が透明にならず、屈折率の測定ができなかった。
また、塗布液の表面張力の適切な範囲は塗布法にもよるが、スピンコート法に関しては、実施例1ではスピンコート跡が発生し、比較例1−4ではスジムラが発生したことから、反射防止コーティング用組成物の表面張力が13〜35、好ましくは15〜30程度となるように、含フッ素界面活性剤(A)を含有させることが好ましいことがわかる。
さらに、含フッ素界面活性剤(A)を含有させず、ドデシルベンゼンスルホン酸を配合した比較例6〜8では、組成物水溶液の保存安定性が悪い傾向がある。なお、比較例8の膜外観評価における「スジムラ*」は、スジムラの発生はあるが他の例より少ないレベルであった。From the result of Table 1, Examples 1-4 have surface tension reduced compared with the comparative example 5 which did not add surfactant, compared with the comparative examples 1-4 which added the conventional surfactant. However, the surface tension was effectively reduced by adding a smaller amount. The refractive indexes of the films in Examples 1 to 4 were almost the same as those in Comparative Example 5. From this, it can be seen that in Examples 1 to 4, the surface tension of the coating solution can be effectively reduced without deteriorating the refractive index of the film, thereby obtaining high coating performance. On the other hand, in Comparative Example 2 in which a large amount of a conventional surfactant (Nikkor) was added to such an extent that good coating performance was obtained, the film was not transparent and the refractive index could not be measured.
In addition, although an appropriate range of the surface tension of the coating solution depends on the coating method, with respect to the spin coating method, spin coating marks were generated in Example 1, and uneven stripes were generated in Comparative Example 1-4. It can be seen that the fluorine-containing surfactant (A) is preferably contained so that the surface tension of the composition for preventing coating is 13 to 35, preferably about 15 to 30.
Furthermore, in Comparative Examples 6 to 8 in which do not contain the fluorine-containing surfactant (A) and dodecylbenzenesulfonic acid is blended, the storage stability of the aqueous solution of the composition tends to be poor. In addition, “striped streaks *” in the film appearance evaluation of Comparative Example 8 was a level lower than the other examples although streaks were generated.
本発明の反射防止コーティング用組成物は、フォトレジスト用の反射防止膜を形成するための塗布液として好適である。本発明によれば、環境への影響の観点から使用禁止となる懸念がある炭素数7以上のPFOSおよびPFOAを使用せずに、表面張力が低くて塗布性に優れるとともに、屈折率が低い反射防止膜を形成できる、フォトレジスト用の反射防止コーティング用組成物が提供される。
なお、2007年2月22日に出願された日本特許出願2007−042418号の明細書、特許請求の範囲及び要約書の全内容をここに引用し、本発明の明細書の開示として、取り入れるものである。The composition for antireflection coating of the present invention is suitable as a coating solution for forming an antireflection film for photoresist. According to the present invention, without using PFOS and PFOA having 7 or more carbon atoms, which may be prohibited from the viewpoint of impact on the environment, the surface tension is low, the coatability is excellent, and the refractive index is low. An antireflective coating composition for a photoresist capable of forming an antireflective film is provided.
In addition, the entire contents of the specification, claims and abstract of Japanese Patent Application No. 2007-042418 filed on February 22, 2007 are incorporated herein as the disclosure of the specification of the present invention. It is.
Claims (8)
前記水溶性ポリマー(B)が、下記一般式(IV)で表される重合単位(b1)を有する水溶性含フッ素重合体(B1)を、50質量%以上含有することを特徴とする反射防止コーティング用組成物。
R1−O−(R2−O)n−R3−X1 ・・・(I)
(式中、R1は末端のフッ素原子が水素原子または塩素原子で置換されていてもよい、直鎖状または分岐状のパーフルオロアルキル基を示し、R2及びR3はそれぞれ独立に、直鎖状または分岐状のパーフルオロアルキレン基を示し、R1、R2及びR3の炭素数の合計が5以下であり、nは0または1以上の整数を示し、X1は塩を形成していてもよい、−COOHまたは−C(CF2Z1)(CF2Z2)OHである。Z1およびZ2はそれぞれ、水素原子、フッ素原子、塩素原子またはトリフルオロメチル基である。)
The water-soluble polymer (B) contains 50% by mass or more of a water-soluble fluoropolymer (B1) having a polymerization unit (b1) represented by the following general formula (IV): Coating composition.
R 1 —O— (R 2 —O) n —R 3 —X 1 (I)
(In the formula, R 1 represents a linear or branched perfluoroalkyl group in which the terminal fluorine atom may be substituted with a hydrogen atom or a chlorine atom, and R 2 and R 3 are each independently Represents a chain or branched perfluoroalkylene group, the total number of carbon atoms of R 1 , R 2 and R 3 is 5 or less, n represents 0 or an integer of 1 or more, and X 1 forms a salt. And —COOH or —C (CF 2 Z 1 ) (CF 2 Z 2 ) OH, each of Z 1 and Z 2 is a hydrogen atom, a fluorine atom, a chlorine atom or a trifluoromethyl group. )
M1CF2CF2O(CF2CF2O)pCF2COOA1 ・・・(III)
(式中、M1はフッ素原子、水素原子または塩素原子を示し、A1は水素原子、アルカリ金属、NH4、有機アミンから誘導される一価基、または第四級アンモニウム基を示し、pは0または1である。)The composition for antireflection coating according to claim 1, wherein the fluorine-containing surfactant (A1) is a compound (A11) represented by the following general formula (III).
M 1 CF 2 CF 2 O (CF 2 CF 2 O) p CF 2 COOA 1 (III)
(In the formula, M 1 represents a fluorine atom, a hydrogen atom or a chlorine atom, A 1 represents a hydrogen atom, an alkali metal, NH 4 , a monovalent group derived from an organic amine, or a quaternary ammonium group; Is 0 or 1.)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009500220A JP4962559B2 (en) | 2007-02-22 | 2008-02-20 | Anti-reflection coating composition |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007042418 | 2007-02-22 | ||
JP2007042418 | 2007-02-22 | ||
JP2009500220A JP4962559B2 (en) | 2007-02-22 | 2008-02-20 | Anti-reflection coating composition |
PCT/JP2008/052890 WO2008102820A1 (en) | 2007-02-22 | 2008-02-20 | Composition for antireflective coating |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2008102820A1 JPWO2008102820A1 (en) | 2010-05-27 |
JP4962559B2 true JP4962559B2 (en) | 2012-06-27 |
Family
ID=39710094
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009500220A Expired - Fee Related JP4962559B2 (en) | 2007-02-22 | 2008-02-20 | Anti-reflection coating composition |
Country Status (8)
Country | Link |
---|---|
US (1) | US7964659B2 (en) |
EP (1) | EP2113811B1 (en) |
JP (1) | JP4962559B2 (en) |
KR (1) | KR101415430B1 (en) |
CN (1) | CN101617273B (en) |
AT (1) | ATE543123T1 (en) |
TW (1) | TWI421314B (en) |
WO (1) | WO2008102820A1 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6071255B2 (en) * | 2012-06-04 | 2017-02-01 | キヤノン株式会社 | Photocured material |
WO2015080061A1 (en) * | 2013-11-29 | 2015-06-04 | 旭硝子株式会社 | Coating composition, and method for producing photoresist laminate |
JP6848547B2 (en) * | 2016-04-22 | 2021-03-24 | Agc株式会社 | Method for producing coating composition and photoresist laminate |
CN113913060B (en) * | 2021-10-19 | 2022-05-03 | 苏州润邦半导体材料科技有限公司 | Top anti-reflective coating composition |
CN114035405B (en) * | 2022-01-07 | 2022-04-22 | 甘肃华隆芯材料科技有限公司 | Composition for preparing top anti-reflection film, top anti-reflection film and fluorine-containing composition |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0895253A (en) * | 1994-09-21 | 1996-04-12 | Shin Etsu Chem Co Ltd | Water-soluble film material |
JP2001200019A (en) * | 2000-01-21 | 2001-07-24 | Shin Etsu Chem Co Ltd | Polymeric compound, material for antireflection film and pattern forming method |
WO2002066526A1 (en) * | 2001-02-23 | 2002-08-29 | Daikin Industries, Ltd. | Ethylenic fluoromonomer containing hydroxyl or fluoroalkylcarbonyl group and fluoropolymer obtained by polymerizing the same |
WO2006003958A1 (en) * | 2004-06-30 | 2006-01-12 | Dainippon Ink And Chemicals, Inc. | Composition for antireflection coating and method for forming pattern using same |
JP2006194962A (en) * | 2005-01-11 | 2006-07-27 | Tokyo Ohka Kogyo Co Ltd | Material for forming protective film, laminate and resist pattern forming method |
JP2007219504A (en) * | 2006-01-08 | 2007-08-30 | Rohm & Haas Electronic Materials Llc | Coating composition for photoresist |
JP2007249154A (en) * | 2006-02-14 | 2007-09-27 | Daikin Ind Ltd | Method for forming resist laminate |
JP2009122700A (en) * | 2003-11-19 | 2009-06-04 | Daikin Ind Ltd | Coating composition |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2643056B2 (en) | 1991-06-28 | 1997-08-20 | インターナショナル・ビジネス・マシーンズ・コーポレイション | Surface anti-reflective coating forming composition and use thereof |
JP3447342B2 (en) | 1993-12-01 | 2003-09-16 | シップレーカンパニー エル エル シー | Surface anti-reflective coating composition |
JP3491978B2 (en) | 1994-08-01 | 2004-02-03 | シップレーカンパニー エル エル シー | Surface anti-reflective coating composition |
JP3510003B2 (en) | 1995-05-01 | 2004-03-22 | クラリアント インターナショナル リミテッド | Composition for anti-reflective coating |
JPH09325500A (en) | 1996-06-07 | 1997-12-16 | Mitsubishi Chem Corp | Applying composition for preventing surface reflection and formation of pattern |
JP3965740B2 (en) | 1997-10-24 | 2007-08-29 | 旭硝子株式会社 | Coating composition |
JP3851594B2 (en) * | 2002-07-04 | 2006-11-29 | Azエレクトロニックマテリアルズ株式会社 | Anti-reflection coating composition and pattern forming method |
CN1742063A (en) * | 2003-01-29 | 2006-03-01 | 旭硝子株式会社 | Coating composition, antireflection film, photoresist and pattern formation method using it |
JP2006047351A (en) * | 2004-07-30 | 2006-02-16 | Asahi Glass Co Ltd | Composition for photoresist protective film, photoresist protective film and method for forming photoresist pattern |
JP4956925B2 (en) * | 2005-07-13 | 2012-06-20 | 旭硝子株式会社 | Polytetrafluoroethylene aqueous dispersion and process for producing the same |
JP2007042418A (en) | 2005-08-03 | 2007-02-15 | Mk Seiko Co Ltd | Light emitting apparatus |
-
2008
- 2008-02-20 EP EP08720771A patent/EP2113811B1/en not_active Not-in-force
- 2008-02-20 WO PCT/JP2008/052890 patent/WO2008102820A1/en active Application Filing
- 2008-02-20 AT AT08720771T patent/ATE543123T1/en active
- 2008-02-20 KR KR1020097015933A patent/KR101415430B1/en active IP Right Grant
- 2008-02-20 JP JP2009500220A patent/JP4962559B2/en not_active Expired - Fee Related
- 2008-02-20 CN CN2008800056993A patent/CN101617273B/en not_active Expired - Fee Related
- 2008-02-22 TW TW097106342A patent/TWI421314B/en not_active IP Right Cessation
-
2009
- 2009-08-20 US US12/544,723 patent/US7964659B2/en not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0895253A (en) * | 1994-09-21 | 1996-04-12 | Shin Etsu Chem Co Ltd | Water-soluble film material |
JP2001200019A (en) * | 2000-01-21 | 2001-07-24 | Shin Etsu Chem Co Ltd | Polymeric compound, material for antireflection film and pattern forming method |
WO2002066526A1 (en) * | 2001-02-23 | 2002-08-29 | Daikin Industries, Ltd. | Ethylenic fluoromonomer containing hydroxyl or fluoroalkylcarbonyl group and fluoropolymer obtained by polymerizing the same |
JP2009122700A (en) * | 2003-11-19 | 2009-06-04 | Daikin Ind Ltd | Coating composition |
WO2006003958A1 (en) * | 2004-06-30 | 2006-01-12 | Dainippon Ink And Chemicals, Inc. | Composition for antireflection coating and method for forming pattern using same |
JP2006194962A (en) * | 2005-01-11 | 2006-07-27 | Tokyo Ohka Kogyo Co Ltd | Material for forming protective film, laminate and resist pattern forming method |
JP2007219504A (en) * | 2006-01-08 | 2007-08-30 | Rohm & Haas Electronic Materials Llc | Coating composition for photoresist |
JP2007249154A (en) * | 2006-02-14 | 2007-09-27 | Daikin Ind Ltd | Method for forming resist laminate |
Also Published As
Publication number | Publication date |
---|---|
JPWO2008102820A1 (en) | 2010-05-27 |
US7964659B2 (en) | 2011-06-21 |
CN101617273B (en) | 2012-11-28 |
KR101415430B1 (en) | 2014-08-06 |
KR20090122201A (en) | 2009-11-26 |
EP2113811A1 (en) | 2009-11-04 |
EP2113811B1 (en) | 2012-01-25 |
TW200904914A (en) | 2009-02-01 |
WO2008102820A1 (en) | 2008-08-28 |
ATE543123T1 (en) | 2012-02-15 |
CN101617273A (en) | 2009-12-30 |
EP2113811A4 (en) | 2010-08-04 |
US20090312471A1 (en) | 2009-12-17 |
TWI421314B (en) | 2014-01-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4962559B2 (en) | Anti-reflection coating composition | |
TW200403315A (en) | Anti-reflective coating composition and pattern forming method | |
JP7569587B2 (en) | Composition for manufacturing top anti-reflective film, top anti-reflective film and fluorine-containing composition | |
JP3965740B2 (en) | Coating composition | |
TW200526692A (en) | Method of forming laminated resist | |
KR101478986B1 (en) | Composition for formation of antireflection film and pattern formation method using the same | |
JPWO2004067655A1 (en) | Coating composition, antireflection film, photoresist, and pattern forming method using the same | |
JP4397931B2 (en) | Antireflection coating composition and pattern forming method using the same | |
JP4786636B2 (en) | Antireflection film forming composition and pattern forming method using the same | |
JP2003221419A (en) | Polymer compound containing fluoroaliphatic group | |
KR101486390B1 (en) | Composition for formation of top antireflective film, and pattern formation method using the composition | |
JP2016089050A (en) | Coating composition and production method of photoresist laminate | |
JP4872124B2 (en) | Fluorine surfactant and photosensitive composition using the same | |
WO2015080061A1 (en) | Coating composition, and method for producing photoresist laminate | |
JP2004107589A (en) | Polymer compound containing fluoroaliphatic group | |
JP6881452B2 (en) | Method for producing coating composition and method for producing photoresist laminate | |
JP6848547B2 (en) | Method for producing coating composition and photoresist laminate | |
KR101357611B1 (en) | Polymer for forming organic anti-reflective coating layer having high etch rate, and composition including the same | |
TW200306338A (en) | Coating composition |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100909 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110329 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110527 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20110530 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120228 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120312 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 4962559 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150406 Year of fee payment: 3 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |