JP4956064B2 - High brightness light emitting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent the impact of heat generation from a light emitting element and to achieve high luminance emission in a narrow region. <P>SOLUTION: Since diffraction gratings 101a-101e capable of taking out radiation mode light 501 are arranged intensively at a narrow interval, high luminance emission can be achieved in a narrow region. Furthermore, since semiconductor lasers 51a-51e and 51a'-51e' are arranged in a separated place at an easy interval, impact of heat generation from the semiconductor laser can be prevented. <P>COPYRIGHT: (C)2008,JPO&amp;INPIT

Description

  The present invention relates to a technology of a device that emits light with high brightness in a small area.

  Currently, light-emitting elements using waveguides are used in various technical fields. This waveguide can input / output light only from the end face, and has a characteristic that light does not leak except in the waveguide direction.

  On the other hand, there is a method of taking out light input to the waveguide in a line shape along the waveguide. Specifically, by forming a diffraction grating having a Bragg scattering order of second order or higher on the surface in the longitudinal direction of the waveguide, light coupled to the diffraction grating can be taken out as radiation mode light (radiation mode). it can. A diffraction grating is a kind of hologram.

  The light emitting device shown in FIG. 15 includes a rectangular waveguide planar waveguide core 200 having a diffraction grating 100 of the second order Bragg scattering order formed on the upper surface, and a transparent clad sheet surrounding the entire planar waveguide core 200. 300. Further, a semiconductor laser 50 for inputting light to the planar waveguide core 200 is disposed close to one end face of the planar waveguide core 200.

  Light output from the semiconductor laser 50 is input from the end face of the planar waveguide core 200. The input light travels along the longitudinal direction of the planar waveguide core 200 as guided mode light 400. When the diffraction grating formed on the upper surface of the planar waveguide core 200 is second order, the guided mode light 400 is emitted as radiation mode light 500 in a direction substantially perpendicular to the upper and lower surfaces of the planar waveguide core 200. The In addition, as the light travels along the waveguide core 200, the light intensity of the waveguide mode light 400 is attenuated due to the influence of the loss as the radiation mode light 500.

  This technique is applied to, for example, a distributed feedback semiconductor laser (DFB-LD (Distributed FeedBack Laser Diode)). This semiconductor laser is also called GCSEL (Grating-coupled Surface Emitting Laser).

  Note that Non-Patent Documents 1 to 4 are known as techniques related to the radiation mode light. Patent Documents 1 to 4 are known as techniques related to GCSEL.

There is a technique for realizing linear or planar light emission by using a diffusing material or a diffusion plate using this light emitting element (see Patent Document 5). In addition, there are a technique that uses a cylindrical optical fiber instead of a planar waveguide, and a technique that forms a holographic light extraction structure along the side surface in the longitudinal direction of the waveguide (see Patent Documents 6 and 7). These techniques aim to expand or disperse the light emitting area.
JP-A-2-77185 JP-A-9-64334 Japanese Patent Laid-Open No. 11-307874 JP 2000-151141 A Japanese Patent Application No. 2006-37399 Japanese Patent Application No. 2006-45946 Japanese Patent Application No. 2006-59920 Japanese Patent No. 3216683 JP 200649410 A Streifer, W and two others, “Coupling coefficients for distributed feedback single- and double-heterostructure diode lasers”, The IEEE Journal of Quantum Electronics, November 1975, Volume 11, Issue 11, p.867-873 Streifer, W and 2 others, “TM-mode coupling coefficients in guided-wave distributed feedback lasers”, The IEEE Journal of Quantum Electronics, February 1976, Volume 12, Issue 12, Part 1, p.74-78 Streifer, W and 2 others, “Radiation losses in distributed feedback lasers and longitudinal mode selection”, The IEEE Journal of Quantum Electronics, November 1976, Volume 12, Issue 11, p.737-739 Streifer, W and two others, “Coupled wave analysis of DFB and DBR lasers”, The IEEE Journal of Quantum Electronics, April 1977, Volume 13, Issue 4, Part 1, p.134-141 S. Sakata and three others, “Crystallographic orientation analysis and high temperature strength of melt growth composite”, Journal of the European Ceramic Society, 2005, Volume 25, Issue 8, p.1441-1445

  However, in order to achieve high brightness using a conventional light emitting device as shown in FIG. 15, a plurality of semiconductor lasers 50 and LEDs that output light and a plurality of planar waveguide cores 200 are arranged in an array. Therefore, there is a problem that there is a limit to increasing the brightness in a predetermined narrow area.

  In addition, when a plurality of light emitting elements such as LEDs are arranged in a narrow area, the light emitted by each LED is concentrated, and there is an effect such as shortening the lifetime of the LED itself. There has been a problem that there is a limit to the increase in brightness.

  The present invention has been made in view of the above, and an object of the present invention is to prevent the influence of heat generation of a light emitting element and realize high luminance light emission in a narrow region.

  The high-intensity light-emitting device according to the first aspect of the present invention is partially arranged intensively at a narrow interval with respect to other waveguide structures, and end faces for coupling light are arranged at a wider interval. A plurality of waveguide structures, a plurality of light emitters arranged at positions corresponding to the end faces, and a portion of the concentrated waveguide structure, and guided by the waveguide structure. And an optical structure for extracting light.

  In the present invention, the plurality of light emitters correspond to the end faces of the waveguide structure arranged at a wider interval than a part of the other light emitting elements is concentrated at a narrow interval. Therefore, it is possible to prevent concentration of heat generated by a plurality of light emitters. Further, since the optical structure is formed in a portion of the waveguide structure that is intensively arranged, it is possible to realize high-luminance light emission in a narrow region.

  The high-intensity light-emitting device according to the second aspect of the present invention is characterized in that the optical structure is a holographic structure including a second-order or higher-order diffraction grating formed on a longitudinal surface of the waveguide structure. .

  In the present invention, since the optical structure is a second-order or higher diffraction grating formed on the surface in the longitudinal direction of the waveguide structure, light guided through the waveguide structure can be extracted from the surface in the longitudinal direction.

  A high-luminance light-emitting device according to a third aspect of the present invention is characterized in that the optical structure is an oblique reflector formed on an end face of the waveguide structure.

  In the present invention, since the optical structure is an oblique reflecting mirror formed on the end face of the waveguide structure, the light guided through the waveguide structure can be reflected and extracted by the oblique reflecting mirror.

  In the high-intensity light-emitting device according to a fourth aspect of the present invention, the optical structure is a branched portion and / or a bent portion formed in the longitudinal direction of the waveguide structure.

  In the present invention, since the optical structure is a branched portion and / or a bent portion formed in the longitudinal direction of the waveguide structure, light guided through the waveguide structure can be extracted from the branched portion and the bent portion.

  In the high-intensity light-emitting device according to the fifth aspect of the present invention, the optical structure is a saddle-shaped waveguide structure in which a plurality of materials formed on an end face of the waveguide structure are intertwined.

  In the present invention, since the optical structure is a saddle-shaped waveguide structure in which a plurality of materials formed on the end face of the waveguide structure are intertwined, the light guided through the waveguide structure is extracted from the saddle-shaped waveguide structure. Is possible.

  The high brightness light emitting device according to a sixth aspect of the present invention is characterized in that the saddle-shaped waveguide structure is a composite ceramic material (MGC) in which a plurality of crystal materials are intertwined.

  In the present invention, since the saddle-shaped waveguide structure is a plurality of ceramic materials (MGC) in which a plurality of crystal materials that can be handled as one part are intertwined, a branched portion or a bent portion is processed and formed in the waveguide structure. More convenient than.

  The high brightness light emitting device according to a seventh aspect of the present invention is characterized in that the composite ceramic material (MGC) includes at least one crystal material doped with a rare earth element.

  In the present invention, since the composite ceramic material (MGC) includes at least one crystal material doped with a rare earth element, wavelength conversion of light guided from the waveguide structure is possible.

  The high-intensity light emitting device according to the eighth aspect of the present invention further includes a wavelength conversion material formed on the surface of the optical structure and excited by light extracted by the optical structure.

  In the present invention, since the wavelength conversion material excited by the light extracted from the optical structure is formed on the surface of the optical structure, the wavelength of the light emitted from the optical structure can be converted.

  A high-luminance light emitting device according to a ninth aspect of the present invention is a composite ceramic material in which the wavelength conversion material includes at least one phosphor mixed in a resin, a crystal material doped with a rare earth element, and a crystal material doped with a rare earth element ( Any one of MGC).

  A high-luminance light emitting device according to a tenth aspect of the present invention is further characterized by further including a reflecting structure that is disposed at a position corresponding to the optical structure and controls the direction of light extracted by the optical structure.

  In the present invention, since the reflecting structure for controlling the direction of the light extracted from the optical structure is arranged at a position corresponding to the optical structure, the direction of the light emitted from the optical structure can be selectively controlled. .

  The high-luminance light emitting device according to an eleventh aspect of the present invention is characterized in that the light emitter emits light of any one color of blue, green, and red.

  In the present invention, since the light emitter emits light of any one color of blue, green, and red, it is possible to emit mixed color light including white.

  A high-luminance light emitting device according to a twelfth aspect of the present invention is characterized in that the light emitter is an LED or a semiconductor laser.

  According to the present invention, it is possible to prevent the influence of heat generation of the light emitting element and realize high luminance light emission in a narrow area.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[First Embodiment]
FIG. 1 is a top view showing a high-intensity light-emitting device according to the first embodiment. Initially, the structure of the high-intensity light-emitting device in this Embodiment is demonstrated.

  The high-intensity light-emitting device according to the present embodiment has five planar waveguide cores 201a in which the centers in the longitudinal direction are intensively arranged at a narrow interval and end faces for coupling light are arranged in parallel at a wider interval. To 201e, and a rectangular parallelepiped or cubic waveguide clad sheet 300 surrounding the entire surface in the longitudinal direction of the planar waveguide cores 201a to 201e.

  In addition, rectangular diffraction gratings 101a to 101e having second and higher order Bragg scattering orders are formed on the central upper surfaces in the longitudinal direction of the planar waveguide cores 201a to 201e, respectively. Since the diffraction gratings 101a to 101e are intensively arranged at a narrow interval, they correspond to extremely small light emitting surfaces having a rectangular shape or a square shape in a high-luminance light emitting device. Specifically, the width of the planar waveguide cores 201a to 201e is about 5 microns, and the length of the diffraction gratings 101a to 101e in the longitudinal direction is about 2 millimeters. Therefore, 25 microns (5 microns × 5 diffraction gratings 101a to 101e) 101e) A very narrow light emission spot having an area of about 2 mm is formed.

  Further, a rectangular or tetragonal highly reflective film 600 having substantially the same area as the light emitting spot is formed on the lower surfaces of the diffraction gratings 101a to 101e. Specifically, the high reflection film 600 can be formed of a deposited metal or a dielectric multilayer film. A dielectric multilayer film is a multilayer film in which dielectrics with different refractive indexes are deposited, and the reflected waves in each layer are strengthened by Bragg reflection due to the interference effect of light, so the reflectance of light of that wavelength is selective. It has the feature which makes it high.

  Further, end surfaces 701a to 701e for coupling light are provided at one ends of the planar waveguide cores 201a to 201e, respectively. The other end is also provided with end faces 701a 'to 701e' having similar functions.

  Further, the semiconductor lasers 51a to 51e and the semiconductor lasers 51a 'to 51e' are disposed close to the one end surfaces 701a to 701e and the other end surfaces 701a 'to 701e', respectively. In place of the semiconductor laser, an LED (Light Emitting Diode) may be used. Since the semiconductor laser has higher directivity of output light than the LED, it has a feature of efficiently coupling light to each end face of the planar waveguide core.

  The semiconductor lasers 51a, 51a ', 51e, 51e' output blue light. Further, the periods of the diffraction gratings 101a and 101e are designed in accordance with the period of the same wavelength as that of blue.

  Further, the semiconductor lasers 51b, 51b ', 51d, and 51d' output green light. The periods of the diffraction gratings 101b and 101d are designed in accordance with the period of the same wavelength as that of green.

  Further, the semiconductor lasers 51c and 51c 'output red light. The period of the diffraction grating 101c is designed according to the period of the same wavelength as that of red.

  Next, the operation of the high-luminance light-emitting device in this embodiment will be described with reference to FIGS. FIG. 2 is a cross-sectional view of the planar waveguide core 201a.

  The blue light output from the semiconductor lasers 51a and 51a 'is coupled to the end faces 701a and 701a' of the planar waveguide core 201a, respectively. The coupled light (hereinafter referred to as “guided mode light”) travels along the longitudinal direction of the planar waveguide core 201a. As the guided mode light 401 travels, the blue radiation mode light 501 is emitted in the vertical direction substantially perpendicular to the planar waveguide core 201a from the upper and lower surfaces of the position where the diffraction grating 101a is formed. In particular, the radiation mode light 501 emitted from the lower surface is reflected by the high reflection film 600 on the upper surface.

  Since the operations of the other planar waveguide cores 201b to 201e are basically the same as the operations described above, the description thereof is omitted here.

  Accordingly, the high brightness light emitting device emits blue light from the upper surfaces of the diffraction gratings 101a and 101e, green light from the upper surfaces of the diffraction gratings 101b and 101d, and red light from the upper surface of the diffraction grating 101c.

  According to the present embodiment, the diffraction gratings 101a to 101e from which the radiation mode light 501 can be extracted are intensively arranged at a narrow interval, so that high-luminance light emission can be realized in a narrow region.

  According to the present embodiment, since the semiconductor lasers 51a to 51e and 51a 'to 51e' are arranged at a distance from each other with a margin, it is possible to prevent the influence of heat generated by the semiconductor laser. Note that light emitted from the diffraction gratings 101a to 101e by being coupled to the planar waveguide cores 201a to 201e is pure visible light having no infrared component, so that almost no heat is generated at the light emission spot.

  According to the present embodiment, light radiated from the lower surface of the planar waveguide cores 201a to 201e is radiated to the upper surface by the highly reflective film 600, so that blue, green, and red light can be efficiently obtained from the upper surface. Is possible.

  According to the present embodiment, since the diffraction gratings 101a to 101e are arranged at very narrow intervals, the emitted blue, green, and red light is 2 mm or more above the diffraction gratings 101a to 101e (light emission spots). Can be diffused and mixed color light including white can be obtained.

[Second Embodiment]
FIG. 3 is a top view showing a high-intensity light emitting device according to the second embodiment. Initially, the structure of the high-intensity light-emitting device in this Embodiment is demonstrated.

  The high-intensity light-emitting device according to the present embodiment is located on twelve planar waveguide cores 201a to 201l arranged radially at a constant angle, and the entire longitudinal surface of the planar waveguide cores 201a to 201l and the radial center portion. A cylindrical waveguide clad sheet 300 is provided to surround the end surface.

  Further, rectangular diffraction gratings 101a to 101l having second and higher order Bragg scattering orders are respectively formed on the upper surfaces in the longitudinal direction of the planar waveguide cores 201a to 201l located at the radial center portions. Since the diffraction gratings 101a to 101l are intensively arranged at a narrow interval, they correspond to a very small light emitting surface having a circular shape in a high luminance light emitting device. Specifically, since the length of the diffraction gratings 101a to 101l in the longitudinal direction is about 2 mm, an extremely narrow light emission spot having a circular region with a radius of about 2 mm is formed.

  Further, on the lower surfaces of the diffraction gratings 101a to 101l, a circular high reflection film 600 having the same area as that of the light emission spot is formed. Since the characteristics of the highly reflective film 600 are the same as those described in the first embodiment, the description thereof is omitted here.

  Further, end faces 701a to 701l for coupling light are provided at one ends of the planar waveguide cores 201a to 201l extending radially.

  Further, semiconductor lasers 51a to 51l are arranged close to the end faces 701a to 701l, respectively. In place of the semiconductor laser, an LED (Light Emitting Diode) may be used. Since the characteristics of the semiconductor laser are the same as those described in the first embodiment, description thereof is omitted here.

  The semiconductor lasers 51a, 51d, 51g, and 51j output blue light. The periods of the diffraction gratings 101a, 101d, 101g, and 101j are designed to match the period of the same wavelength as that of blue.

  Further, the semiconductor lasers 51b, 51e, 51h, and 51k output green light. The periods of the diffraction gratings 101b, 101e, 101h, and 101k are designed according to the period of the same wavelength as that of green.

  Further, the semiconductor lasers 51c, 51f, 51i, and 51l output red light. The periods of the diffraction gratings 101c, 101f, 101i, and 101l are designed in accordance with the period of the same wavelength as that of red.

  Next, the operation of the high brightness light emitting device in this embodiment will be described.

  The blue light output from the semiconductor laser 51a is coupled to the end surface 701a of the planar waveguide core 201a. The coupled light (hereinafter referred to as “guided mode light”) travels along the longitudinal direction of the planar waveguide core 201a. As the guided mode light travels, the blue radiation mode light is emitted in the vertical direction substantially perpendicular to the planar waveguide core 201a from the upper and lower surfaces of the position where the diffraction grating 101a is formed. In particular, the radiation mode light emitted from the lower surface is reflected by the high reflection film 600 to the upper surface.

  Since the operations of the other planar waveguide cores 201b to 201l are basically the same as the operations described above, the description thereof is omitted here.

  Accordingly, the high-intensity light emitting device includes blue light from the upper surface of the diffraction gratings 101a, 101d, 101g, and 101j, green light from the upper surfaces of the diffraction gratings 101b, 101e, 101h, and 101k, and the diffraction gratings 101c, 101f, and 101f. Red light is emitted from the upper surfaces of 101i and 101l.

  According to the present embodiment, the diffraction gratings 101a to 101l from which radiation mode light can be extracted are intensively arranged at narrow intervals, so that high-luminance light emission can be realized in a narrow region.

  According to the present embodiment, since the semiconductor lasers 51a to 51l are arranged at a distance from each other with a margin, it is possible to prevent the influence of heat generated by the semiconductor laser. Note that the light emitted from the diffraction gratings 101a to 101l by being coupled to the planar waveguide cores 201a to 201l is pure visible light having no infrared component, so that almost no heat is generated at the light emission spot.

  According to the present embodiment, the high reflection film 600 radiates light emitted from the lower surface of the planar waveguide cores 201a to 201l to the upper surface, so that blue, green, and red light can be efficiently obtained from the upper surface. Is possible.

  According to this embodiment, blue, green, and red light radiated from a narrow region diffuses above the light emission spot, so that mixed color light including white can be obtained.

[Third Embodiment]
FIG. 4 is a top view showing a high-intensity light-emitting device according to the third embodiment. Initially, the structure of the high-intensity light-emitting device in this Embodiment is demonstrated.

  The high-intensity light-emitting device according to the present embodiment includes twelve planar waveguide cores 201a to 201l arranged radially at a constant angle, and the sides of the planar waveguide cores 201a to 201l that are located on the entire longitudinal surface and the central portion. A cylindrical waveguide clad sheet 300 is provided to surround the end surface of the cylindrical waveguide clad sheet 300.

  Further, a truncated cone reflecting mirror 600 having an inclination angle of 45 ° is formed at the center of the planar waveguide cores 201a to 201l arranged radially. FIG. 5 is a cross-sectional view of the planar waveguide cores 201 a and 201 g and the oblique reflection mirror 600. The side surface of the oblique reflection mirror 600 and the end surfaces of the planar waveguide cores 201a to 201l located at the radial center portion are connected and have an integral shape.

  The longitudinal direction of the planar waveguide cores 201a to 201l in the case where the diffraction grating described in the first embodiment or the second embodiment or the shape such as branching or bending described in the next embodiment is not provided. The light traveling along the line does not leak out from other than the waveguide, and can be emitted only from the end face. Therefore, as shown in FIG. 5, the oblique reflector 600 is sufficient to have a height that is approximately the same as the vertical width of the end faces of the planar waveguide cores 201a to 201l. Specifically, since the planar waveguide cores 201a to 201l have a vertical width of about 5 microns and the oblique reflector 600 has a truncated cone shape with an inclination angle of 45 °, the radius and height of the base is about 5 A very small emission spot of micron is formed.

  In addition, end surfaces 701a to 701l that enable optical coupling are provided at one ends of the planar waveguide cores 201a to 201l that extend radially.

  Further, semiconductor lasers 51a to 51l are arranged close to the end faces 701a to 701l, respectively. In place of the semiconductor laser, an LED (Light Emitting Diode) may be used. Since the characteristics of the semiconductor laser are the same as those described in the first embodiment, description thereof is omitted here.

  The semiconductor lasers 51a, 51d, 51g, 51j output blue light, the semiconductor lasers 51b, 51e, 51h, 51k output green light, and the semiconductor lasers 51c, 51f, 51i, 51l output red light. .

  Next, the operation of the high-luminance light-emitting device in this embodiment will be described with reference to FIGS.

  The blue light output from the semiconductor laser 51a is coupled to the end surface 701a of the planar waveguide core 201a. The coupled light (hereinafter referred to as “guided mode light”) travels along the longitudinal direction of the planar waveguide core 201a. The guided mode light 401 is reflected upward at an angle of 90 ° by the oblique reflector 600 having an inclination angle of 45 °, and is emitted from the upper surface of the high-luminance light emitting device as the radiation mode light 501.

  Since the operations of the other planar waveguide cores 201b to 201l are basically the same as the operations described above, the description thereof is omitted here.

  Accordingly, the high brightness light emitting device is connected to the blue light from the side of the oblique reflector 600 connected to the planar waveguide cores 201a, 201d, 201g, 201j, and to the planar waveguide cores 201b, 201e, 201h, 201k. Green light is emitted from the side surface of the oblique reflection mirror 600, and red light is emitted from the side surface of the oblique reflection mirror 600 connected to the planar waveguide cores 201c, 201f, 201i, and 201l.

  According to the present embodiment, the oblique reflection mirror that has the radiation mode light 501 guided to the planar waveguide cores 201a to 201l having the same size as the vertical width of the end surfaces of the planar waveguide cores 201a to 201l. Since the light is reflected by 600 and emitted from the upper surface, it is possible to realize high-luminance light emission in a narrow area.

  According to the present embodiment, since the semiconductor lasers 51a to 51l are arranged at a distance from each other with a margin, it is possible to prevent the influence of heat generated by the semiconductor laser. Note that the light emitted from the oblique reflection mirror 600 by being coupled to the planar waveguide cores 201a to 201l is pure visible light having no infrared component, so that almost no heat is generated at the light emission spot.

  According to this embodiment, blue, green, and red light radiated from a narrow region diffuses above the light emission spot, so that mixed color light including white can be obtained.

  According to the present embodiment, it is possible to form a plane without using the fine diffraction grating described in the first embodiment or the second embodiment, or using the reflecting mirror formed on the lower surface of the diffraction grating. Since a simple integrated truncated cone reflector connected to the waveguide core is used, it is easy to manufacture a high-intensity light-emitting device, and high-intensity light emission can be realized at low cost.

[Fourth Embodiment]
FIG. 6 is a top view showing a high-intensity light emitting device according to the fourth embodiment. Initially, the structure of the high-intensity light-emitting device in this Embodiment is demonstrated.

  The high-intensity light-emitting device according to the present embodiment has five planar waveguide cores 201a in which the centers in the longitudinal direction are intensively arranged at a narrow interval and end faces for coupling light are arranged in parallel at a wider interval. To 201e, and a rectangular parallelepiped or cubic waveguide clad sheet 300 surrounding the entire surface in the longitudinal direction of the planar waveguide cores 201a to 201e.

  Further, the central portion in the longitudinal direction of the planar waveguide cores 201a to 201e is intertwined in a complicated manner due to branching or bending. Since the central portion is intensively arranged at a narrow interval, it corresponds to an extremely small light emitting surface having a rectangular shape or a square shape in a high-luminance light emitting device. Specifically, an extremely narrow light emission spot having an area of about 2 mm × 2 mm is formed. Note that the branching and bending of the planar waveguide cores 201a to 201e in the horizontal direction are processed using a mask pattern and etching, and the branching and bending in the vertical direction changes the thickness of the planar waveguide cores 201a to 201e themselves. It can be processed.

  One end of each of the planar waveguide cores 201a to 201e is provided with end faces 701a to 701e for coupling light. The other end is also provided with end faces 701a 'to 701e' having similar functions.

  Further, the semiconductor lasers 51a to 51e and the semiconductor lasers 51a 'to 51e' are disposed close to the one end surfaces 701a to 701e and the other end surfaces 701a 'to 701e', respectively. In place of the semiconductor laser, an LED (Light Emitting Diode) may be used. Since the characteristics of the semiconductor laser are the same as those described in the first embodiment, description thereof is omitted here.

  The semiconductor lasers 51a, 51a ′, 51e, 51e ′ output blue light, the semiconductor lasers 51b, 51b ′, 51d, 51d ′ output green light, and the semiconductor lasers 51c, 51c ′ output red light. To do.

  Next, the operation of the high brightness light emitting device in this embodiment will be described.

  The blue light output from the semiconductor lasers 51a and 51a 'is coupled to the end faces 701a and 701a' of the planar waveguide core 201a, respectively. The coupled light (hereinafter referred to as “guided mode light”) travels along the longitudinal direction of the planar waveguide core 201a. As the guided mode light travels, blue radiation mode light is emitted from the central portion in the longitudinal direction of the planar waveguide core 201a that has been subjected to processing such as branching and bending. A portion bent in the horizontal direction radiates in the horizontal direction, and a portion bent in the vertical direction radiates in the vertical direction.

  Since the operations of the other planar waveguide cores 201b to 201e are basically the same as the operations described above, the description thereof is omitted here.

  Therefore, the high-intensity light-emitting device has blue light from the longitudinal center part of the planar waveguide cores 201a and 201e, green light from the longitudinal center part of the planar waveguide cores 201b and 201d, and planar light guide. Red light is emitted from the central portion in the longitudinal direction of the waveguide core 201c.

  In the first to third embodiments, light is radiated substantially perpendicularly to the planar waveguide core, which can be applied when directivity is required. On the other hand, the present embodiment can be applied when light scattered at a wide angle is required. Further, by forming the highly reflective film 600 used in the first embodiment on the lower surface of the center of the planar waveguide cores 201a to 201e formed with branches and bends, it is possible to suppress downward radiation. . The characteristics of the highly reflective film 600 are the same as those described in the first embodiment, and thus description thereof is omitted here.

  According to the present embodiment, the central portions of the planar waveguide cores 201a to 201e that have been subjected to the branching and bending processing capable of extracting the radiation mode light are intensively arranged in a region at a narrow interval, so that it is narrow. It is possible to realize high luminance light emission in a region.

  According to the present embodiment, since the semiconductor lasers 51a to 51e and 51a 'to 51e' are arranged at a distance from each other with a margin, it is possible to prevent the influence of heat generated by the semiconductor laser. Note that light emitted from the central portion where the branching or bending is formed by coupling to the planar waveguide cores 201a to 201e is pure visible light having no infrared component, so that almost no heat is generated at the light emitting spot.

  According to this embodiment, blue, green, and red light radiated from a narrow region diffuses above the light emission spot, so that mixed color light including white can be obtained.

[Fifth Embodiment]
FIG. 7 is a top view showing a high-intensity light emitting device according to the fifth embodiment. Initially, the structure of the high-intensity light-emitting device in this Embodiment is demonstrated.

  The high-intensity light-emitting device according to the present embodiment surrounds the longitudinal direction of six planar waveguide cores 201a to 201f and the planar waveguide cores 201a to 201f that are arranged radially at a constant angle with the center in the longitudinal direction as an axis. A cylindrical waveguide clad sheet 300 is provided.

  Further, the central portion in the longitudinal direction of the planar waveguide cores 201a to 201f is intertwined in a complicated manner due to branching or bending. Since this central portion overlaps the central portions in the longitudinal direction of all the planar waveguide cores 201a to 201e and is intensively arranged at a narrow interval, it becomes an extremely small light emitting surface having a circular shape in a high luminance light emitting device. It will be equivalent. Specifically, an extremely narrow light emission spot having a circular region with a radius of about 2 mm is formed. The branching and bending of the planar waveguide cores 201a to 201f in the horizontal direction are processed using a mask pattern and etching, and the branching and bending in the vertical direction changes the thickness of the planar waveguide cores 201a to 201f themselves. It can be processed.

  End faces 701a to 701f for coupling light are respectively provided at one ends of the planar waveguide cores 201a to 201f. Also on the other end, end faces 701a 'to 701f' having the same function are provided.

  Further, the semiconductor lasers 51a to 51f and the semiconductor lasers 51a 'to 51f' are disposed close to the one end surfaces 701a to 701f and the other end surfaces 701a 'to 701f', respectively. In place of the semiconductor laser, an LED (Light Emitting Diode) may be used. Since the characteristics of the semiconductor laser are the same as those described in the first embodiment, description thereof is omitted here.

  The semiconductor lasers 51a, 51a ′, 51d and 51d ′ output blue light, the semiconductor lasers 51b, 51b ′, 51e and 51e ′ output green light, and the semiconductor lasers 51c, 51c ′, 51f and 51f ′ Outputs red light.

  Next, the operation of the high brightness light emitting device in this embodiment will be described.

  The blue light output from the semiconductor lasers 51a and 51a 'is coupled to the end faces 701a and 701a' of the planar waveguide core 201a, respectively. The coupled light (hereinafter referred to as “guided mode light”) travels along the longitudinal direction of the planar waveguide core 201a. As the guided mode light travels, blue radiation mode light is emitted from the central portion in the longitudinal direction of the planar waveguide core 201a that has been subjected to processing such as branching and bending. A portion bent in the horizontal direction radiates in the horizontal direction, and a portion bent in the vertical direction radiates in the vertical direction.

  Since the operations of the other planar waveguide cores 201b to 201f are basically the same as the operations described above, the description thereof is omitted here.

  Therefore, the high-intensity light emitting device has blue light from the longitudinal center portion of the planar waveguide cores 201a and 201d, green light from the longitudinal center portion of the planar waveguide cores 201b and 201e, and planar light guide. Red light is emitted from the central portion of the waveguide cores 201c and 201f in the longitudinal direction.

  In the first to third embodiments, light is radiated substantially perpendicularly to the planar waveguide core, which can be applied when directivity is required. On the other hand, the present embodiment can be applied when light scattered at a wide angle is required. Further, by forming the highly reflective film 600 used in the first embodiment on the lower surface of the center of the planar waveguide cores 201a to 201e formed with branches and bends, it is possible to suppress downward radiation. . The characteristics of the highly reflective film 600 are the same as those described in the first embodiment, and thus description thereof is omitted here.

  According to the present embodiment, the central portions of the planar waveguide cores 201a to 201f that have been subjected to branching and bending processing capable of extracting radiation mode light are intensively arranged in a region at a narrow interval. It is possible to realize high luminance light emission in a region.

  According to the present embodiment, since the semiconductor lasers 51a to 51f and 51a 'to 51f' are arranged at intervals with a margin, it is possible to prevent the influence of heat generated by the semiconductor laser. Note that light emitted from the central portion where the branching or bending is formed by coupling to the planar waveguide cores 201a to 201f is pure visible light having no infrared component, so that almost no heat is generated at the light emitting spot.

  According to this embodiment, blue, green, and red light radiated from a narrow region diffuses above the light emission spot, so that mixed color light including white can be obtained.

[Sixth Embodiment]
FIG. 8 is a top view showing a high-intensity light-emitting device according to the sixth embodiment. Initially, the structure of the high-intensity light-emitting device in this Embodiment is demonstrated.

  The high-intensity light-emitting device according to the present embodiment has five planar waveguide cores 201a in which one end in the longitudinal direction is intensively arranged at a narrow interval and end faces for coupling light are arranged in parallel at a wider interval. To 201e, five planar waveguide cores 201f to 201j having the same arrangement, planar waveguide cores 201a to 201e and planar waveguide cores 201f to 201j connected to end faces intensively arranged at narrow intervals ( And a rectangular parallelepiped or cubic waveguide clad sheet 300 surrounding the entire length of the MGC 800 and the planar waveguide cores 201a to 201j in the longitudinal direction.

  MGC800 is a composite ceramic crystal having a shape in which a single crystal phase and a single crystal phase having a refractive index close to the refractive index of the single crystal phase are entangled with each other without any gap (Patent Documents 8 and 9, Non-patent Documents). Reference 1). Each phase is a continuous series of crystals that are bent, branched, and reconnected. In addition to binary MGC (binary MGC) having these two types of phases, there are ternary MGC (ternary MGC) and quaternary MGC (quaternary MGC) having a plurality of phases.

  FIG. 9 is a perspective view showing an MGC 800 composed of a YAG phase 801 and an alumina phase 802. Since the refractive index of the YAG phase 801 is about 1.8 and the refractive index of the alumina phase 802 is about 1.7, the YAG phase 801 has a slightly larger refractive index than the alumina phase 802. Accordingly, a waveguide structure having the YAG phase 801 as a core is naturally formed. In addition to a small difference in refractive index, the interface between the YAG phase 801 and the alumina phase 802 is very smooth, so that optical loss is very small. A part of the waveguide light is radiated as a radiation mode in all directions from the bent part, the part whose thickness has changed, the branched part, and the like.

  In addition, since the portions where the planar waveguide cores 201a to 201e and the planar waveguide cores 201f to 201j are connected to the MGC 800 are intensively arranged at a narrow interval, the MGC 800 has a rectangular parallelepiped shape or a cubic shape in a high-luminance light emitting device. This corresponds to an extremely small illuminant. Specifically, the vertical width X of the MGC 800 requires a length for connecting the planar waveguide cores 201a to 201e having a width of about 5 microns, so that the length is about 25 microns (5 microns × 5 planar waveguide cores 201a to 201m). 201e). The lateral width Y of the MGC 800 is about 2 mm. The height Z of the MGC 800 is approximately the same as the width of the planar waveguide cores 201a to 201j, and is about 5 microns. That is, a very narrow light emission spot having an area of about 25 microns × 2 mm × 5 microns is formed.

  End faces 701a to 701j that enable optical coupling are provided at the other ends of the planar waveguide cores 201a to 201j that are not connected to the MGC 800, respectively.

  Further, semiconductor lasers 51a to 51j are arranged close to the end faces 701a to 701j, respectively. In place of the semiconductor laser, an LED (Light Emitting Diode) may be used. Since the characteristics of the semiconductor laser are the same as those described in the first embodiment, description thereof is omitted here.

  The semiconductor lasers 51a, 51e, 51f, and 51j output blue light, the semiconductor lasers 51b, 51d, 51g, and 51i output green light, and the semiconductor lasers 51c and 51h output red light.

  Next, the operation of the high-luminance light-emitting device in this embodiment will be described with reference to FIGS.

  The blue light output from the semiconductor laser 51a is coupled to the end surface 701a of the planar waveguide core 201a. The coupled light (hereinafter referred to as “guided mode light”) travels along the longitudinal direction of the planar waveguide core 201a. The guided mode light is coupled to the MGC 800 and travels along the YAG phase 801 of the MGC 800. The guided mode light is radiated in all directions as blue radiation mode light from a bent portion or a branched portion of the YAG phase 801 that is a waveguide.

  Since the operations of the other planar waveguide cores 201b to 201j are basically the same as the operations described above, the description thereof is omitted here.

  Accordingly, the high brightness light emitting device emits blue, green, and red light from the entire surface of the MGC 800.

  In the first to third embodiments, light is radiated substantially perpendicularly to the planar waveguide core, which can be applied when directivity is required. On the other hand, the present embodiment can be applied when light scattered at a wide angle is required. Further, by forming the highly reflective film 600 used in the first embodiment on the lower surface of the MGC 800, it is possible to suppress downward radiation. The characteristics of the highly reflective film 600 are the same as those described in the first embodiment, and thus description thereof is omitted here.

  According to the present embodiment, since the radiation mode light is extracted using the MGC 800 having a very small shape, high luminance light emission can be realized in a narrow region.

  According to the present embodiment, since the semiconductor lasers 51a to 51j are arranged at a distance from each other with a margin, it is possible to prevent the influence of heat generated by the semiconductor laser. Note that the light emitted from the MGC 800 by being coupled to the planar waveguide cores 201a to 201j is pure visible light having no infrared component, so that almost no heat is generated at the light emission spot.

  According to this embodiment, blue, green, and red light radiated from a narrow region diffuses above the light emission spot, so that mixed color light including white can be obtained.

  According to the present embodiment, since the MGC 800 that can be handled as one component is used, branching and bending are processed and formed using the mask patterns described in the fourth and fifth embodiments. Also convenient.

[Seventh Embodiment]
FIG. 10 is a top view showing a high-intensity light-emitting device according to the seventh embodiment. Initially, the structure of the high-intensity light-emitting device in this Embodiment is demonstrated.

  The high-intensity light-emitting device according to the present embodiment includes twelve planar waveguide cores 201a to 201l arranged radially at a fixed angle, and MGC connected to the end faces of the planar waveguide cores 201a to 201l located in the radial center portion. (Melt Growth Composite) 800 and a cylindrical waveguide clad sheet 300 that surrounds the entire length of MGC 800 and the planar waveguide cores 201a to 201l in the longitudinal direction.

  The MGC 800 used in the present embodiment has a configuration composed of two phases of a YAG phase and an alumina phase, and is the same as the MGC 800 used in the sixth embodiment. Further, the function of the MGC 800 is the same as that described in the sixth embodiment, and thus the description thereof is omitted here.

  In addition, since the end faces of the planar waveguide cores 201a to 201l connected to the MGC 800 are intensively arranged at a narrow interval, the MGC 800 corresponds to a very cylindrical light emitter in a high-luminance light emitting device. . Specifically, the MGC 800 has a columnar and extremely narrow light emission spot having a height of about 2 mm and substantially the same height as the planar waveguide cores 201a to 201l having a width of about 5 microns.

  End surfaces 701a to 701l that enable optical coupling are respectively provided at one ends of the planar waveguide cores 201a to 201l that extend radially.

  Further, semiconductor lasers 51a to 51l are arranged close to the end faces 701a to 701l, respectively. In place of the semiconductor laser, an LED (Light Emitting Diode) may be used. Since the characteristics of the semiconductor laser are the same as those described in the first embodiment, description thereof is omitted here.

  The semiconductor lasers 51a, 51d, 51g, 51j output blue light, the semiconductor lasers 51b, 51e, 51h, 51k output green light, and the semiconductor lasers 51c, 51f, 51i, 51l output red light. .

  Next, the operation of the high brightness light emitting device in this embodiment will be described.

  The blue light output from the semiconductor laser 51a is coupled to the end surface 701a of the planar waveguide core 201a. The coupled light (hereinafter referred to as “guided mode light”) travels along the longitudinal direction of the planar waveguide core 201a. The guided mode light is coupled to the MGC 800 and travels along the YAG phase 801 of the MGC 800. The guided mode light is radiated in all directions as blue radiation mode light from a bent portion or a branched portion of the YAG phase 801 that is a waveguide.

  Since the operations of the other planar waveguide cores 201b to 201l are basically the same as the operations described above, the description thereof is omitted here.

  Accordingly, the high brightness light emitting device emits blue, yellow, and red light from the entire surface of the MGC 800.

  In the first to third embodiments, light is radiated substantially perpendicularly to the planar waveguide core, which can be applied when directivity is required. On the other hand, the present embodiment can be applied when light scattered at a wide angle is required. Further, by forming the highly reflective film 600 used in the first embodiment on the lower surface of the MGC 800, it is possible to suppress downward radiation. The characteristics of the highly reflective film 600 are the same as those described in the first embodiment, and thus description thereof is omitted here.

  According to the present embodiment, since the radiation mode light is extracted using the MGC 800 having a very small shape, high luminance light emission can be realized in a narrow region.

  According to the present embodiment, since the semiconductor lasers 51a to 51l are arranged at a distance from each other with a margin, it is possible to prevent the influence of heat generated by the semiconductor laser. Note that the light emitted from the MGC 800 by being coupled to the planar waveguide cores 201a to 201l is pure visible light having no infrared component, so that almost no heat is generated at the light emission spot.

  According to this embodiment, blue, green, and red light radiated from a narrow region diffuses above the light emission spot, so that mixed color light including white can be obtained.

  According to the present embodiment, since the MGC 800 that can be handled as one component is used, branching and bending are processed and formed using the mask patterns described in the fourth and fifth embodiments. Also convenient.

[Eighth Embodiment]
FIG. 11 is a top view showing a high-intensity light emitting device according to the eighth embodiment. Initially, the structure of the high-intensity light-emitting device in this Embodiment is demonstrated.

  The high-intensity light-emitting device according to the present embodiment has five planar waveguide cores 201a in which one end in the longitudinal direction is intensively arranged at a narrow interval and end faces for coupling light are arranged in parallel at a wider interval. To 201e, five planar waveguide cores 201f to 201j having the same arrangement, planar waveguide cores 201a to 201e and planar waveguide cores 201f to 201j connected to end faces intensively arranged at narrow intervals ( And a rectangular parallelepiped or cubic waveguide clad sheet 300 surrounding the entire length of the MGC 800 and the planar waveguide cores 201a to 201j in the longitudinal direction.

The MGC 800 used in the present embodiment has a configuration composed of two phases of a YAG phase doped with a rare earth element Ce ³⁺ and an alumina phase. This Ce ion has a function of converting the wavelength of blue guided mode light traveling in the YAG phase to yellow. This principle is similar to the principle in which a YAG laser obtains an oscillation wavelength of 1060 nm by optically exciting doped Nd ³⁺ ions.

Specifically, since the refractive index of the YAG phase is about 1.8 and the refractive index of the alumina phase is about 1.7, the YAG phase has a slightly higher refractive index than the alumina phase. Accordingly, a waveguide structure having a YAG phase doped with Ce ³⁺ as a core is naturally formed. In addition to the small difference in refractive index, the optical loss is very small because the interface between the YAG phase and the alumina phase is very smooth. When blue light output from a semiconductor laser is coupled to the YAG phase of MGC800, it is absorbed by excitation, so light with a high proportion of yellow component is bent part of waveguide, thickness changed part, branched part, etc. Is emitted in all directions. That is, blue light emission is used for amplification of yellow light emission. On the other hand, the other blue light that is not bonded to the YAG phase passes through the alumina phase.

  The YAG phase used in the present embodiment is different from the conventional method for obtaining white light emission by mixing a phosphor into a resin. Conventionally, a part of blue light emission from a blue LED is absorbed by a Ce-activated YAG phosphor mixed in a transparent resin and converted to yellow, and the yellow light emission and blue light emission are mixed to obtain pseudo white light. It was used. In this case, color mixing tends to occur in the material mixed with the phosphor due to scattering of the granular phosphor itself. On the other hand, since the yellow and blue phases are separated in a mosaic pattern on the output surface of the MGC 800, the scattering loss is small and the color mixture is performed after being emitted.

  In addition, since the portions where the planar waveguide cores 201a to 201e and the planar waveguide cores 201f to 201j are connected to the MGC 800 are intensively arranged at a narrow interval, the MGC 800 has a rectangular parallelepiped shape or a cubic shape in a high-luminance light emitting device. This corresponds to an extremely small illuminant. Specifically, the vertical width X of the MGC 800 requires a length for connecting the planar waveguide cores 201a to 201e having a width of about 5 microns, so that the length is about 25 microns (5 microns × 5 planar waveguide cores 201a to 201m). 201e). The lateral width Y of the MGC 800 is about 2 mm. The height Z of the MGC 800 is approximately the same as the width of the planar waveguide cores 201a to 201j, and is about 5 microns. That is, a very narrow light emission spot having an area of about 25 microns × 2 mm × 5 microns is formed.

  End faces 701a to 701j that enable optical coupling are provided at the other ends of the planar waveguide cores 201a to 201j that are not connected to the MGC 800, respectively.

  Further, semiconductor lasers 51a to 51j are arranged close to the end faces 701a to 701j, respectively. In place of the semiconductor laser, an LED (Light Emitting Diode) may be used. Since the characteristics of the semiconductor laser are the same as those described in the first embodiment, description thereof is omitted here.

  Unlike the first to seventh embodiments, all the semiconductor lasers 51a to 51j in the present embodiment output blue light.

  Next, the operation of the high brightness light emitting device in this embodiment will be described.

  The blue light output from the semiconductor laser 51a is coupled to the end surface 701a of the planar waveguide core 201a. The coupled light (hereinafter referred to as “guided mode light”) travels along the longitudinal direction of the planar waveguide core 201a. The guided mode light is coupled to the MGC 800 and travels along the YAG phase of the MGC 800. The guided mode light is converted to a yellow wavelength by Ce ions, and is emitted in all directions as yellow radiation mode light from a bent portion or a branched portion of the YAG phase that is a waveguide. The remaining blue light that is not coupled to the YAG phase passes through the alumina phase and is emitted from the MGC 800.

  Since the operations of the other planar waveguide cores 201b to 201j are basically the same as the operations described above, the description thereof is omitted here.

  Accordingly, the high-luminance light emitting device emits blue and yellow light from the entire surface of the MGC 800.

  In the first to third embodiments, light is radiated substantially perpendicularly to the planar waveguide core, which can be applied when directivity is required. On the other hand, the present embodiment can be applied when light scattered at a wide angle is required. Further, by forming the highly reflective film 600 used in the first embodiment on the lower surface of the MGC 800, it is possible to suppress downward radiation. The characteristics of the highly reflective film 600 are the same as those described in the first embodiment, and thus description thereof is omitted here.

  According to the present embodiment, since the radiation mode light is extracted using the MGC 800 having a very small shape, high luminance light emission can be realized in a narrow region.

  According to the present embodiment, since the semiconductor lasers 51a to 51j are arranged at a distance from each other with a margin, it is possible to prevent the influence of heat generated by the semiconductor laser. Note that the light emitted from the MGC 800 by being coupled to the planar waveguide cores 201a to 201j is pure visible light having no infrared component, so that almost no heat is generated at the light emission spot.

  According to the present embodiment, since the blue light transmitted through the alumina phase and the yellow light converted into a wavelength by Ce ions in the YAG phase diffuse above the emission spot, mixed color light including white is obtained. It is possible.

  According to the present embodiment, since the MGC 800 that can be handled as one component is used, branching and bending are processed and formed using the mask patterns described in the fourth and fifth embodiments. Also convenient.

[Ninth Embodiment]
FIG. 12 is a top view showing a high brightness light emitting device according to the ninth embodiment. Initially, the structure of the high-intensity light-emitting device in this Embodiment is demonstrated.

  The high-intensity light-emitting device according to the present embodiment includes twelve planar waveguide cores 201a to 201l arranged radially at a fixed angle, and MGC connected to the end faces of the planar waveguide cores 201a to 201l located in the radial center portion. (Melt Growth Composite) 800 and a cylindrical waveguide clad sheet 300 that surrounds the entire length of MGC 800 and the planar waveguide cores 201a to 201l in the longitudinal direction.

The MGC 800 used in the present embodiment has a configuration composed of two phases of a YAG phase doped with a rare earth element Ce ³⁺ and an alumina phase. Since the function of doping Ce ions is the same as that described in the eighth embodiment, the description thereof is omitted here.

  In addition, since the end faces of the planar waveguide cores 201a to 201l connected to the MGC 800 are intensively arranged at a narrow interval, the MGC 800 corresponds to a very cylindrical light emitter in a high-luminance light emitting device. . Specifically, the MGC 800 has a columnar and extremely narrow light emission spot having a height of about 2 mm and substantially the same height as the planar waveguide cores 201a to 201l having a width of about 5 microns.

  End surfaces 701a to 701l that enable optical coupling are respectively provided at one ends of the planar waveguide cores 201a to 201l that extend radially.

  Further, semiconductor lasers 51a to 51l are arranged close to the end faces 701a to 701l, respectively. In place of the semiconductor laser, an LED (Light Emitting Diode) may be used. Since the characteristics of the semiconductor laser are the same as those described in the first embodiment, description thereof is omitted here.

  Unlike the first to seventh embodiments, all the semiconductor lasers 51a to 51l in the present embodiment output blue light.

  Next, the operation of the high brightness light emitting device in this embodiment will be described.

  The blue light output from the semiconductor laser 51a is coupled to the end surface 701a of the planar waveguide core 201a. The coupled light (hereinafter referred to as “guided mode light”) travels along the longitudinal direction of the planar waveguide core 201a. The guided mode light is coupled to the MGC 800 and travels along the YAG phase of the MGC 800. The guided mode light is converted to a yellow wavelength by Ce ions, and is emitted in all directions as yellow radiation mode light from a bent portion or a branched portion of the YAG phase that is a waveguide. The remaining blue light that is not coupled to the YAG phase passes through the alumina phase and is emitted from the MGC 800.

  Since the operations of the other planar waveguide cores 201b to 201l are basically the same as the operations described above, the description thereof is omitted here.

  Accordingly, the high-luminance light emitting device emits blue and yellow light from the entire surface of the MGC 800.

  In the first to third embodiments, light is radiated substantially perpendicularly to the planar waveguide core, which can be applied when directivity is required. On the other hand, the present embodiment can be applied when light scattered at a wide angle is required. Further, by forming the highly reflective film 600 used in the first embodiment on the lower surface of the MGC 800, it is possible to suppress downward radiation. The characteristics of the highly reflective film 600 are the same as those described in the first embodiment, and thus description thereof is omitted here.

  According to the present embodiment, since the radiation mode light is extracted using the MGC 800 having a very small shape, high luminance light emission can be realized in a narrow region.

  According to the present embodiment, since the semiconductor lasers 51a to 51l are arranged at a distance from each other with a margin, it is possible to prevent the influence of heat generated by the semiconductor laser. Note that the light emitted from the MGC 800 by being coupled to the planar waveguide cores 201a to 201l is pure visible light having no infrared component, so that almost no heat is generated at the light emission spot.

  According to the present embodiment, since the blue light transmitted through the alumina phase and the yellow light converted into a wavelength by Ce ions in the YAG phase diffuse above the emission spot, mixed color light including white is obtained. It is possible.

  According to the present embodiment, since the MGC 800 that can be handled as one component is used, branching and bending are processed and formed using the mask patterns described in the fourth and fifth embodiments. Also convenient.

[Tenth embodiment]
FIG. 13 is a top view showing a high-intensity light-emitting device according to the tenth embodiment. Initially, the structure of the high-intensity light-emitting device in this Embodiment is demonstrated. The present embodiment is a configuration in which the structure 900 in which the powder phosphor is solidified with a transparent resin is further provided in the first embodiment.

  The high-intensity light-emitting device according to the present embodiment has five planar waveguide cores 201a in which the centers in the longitudinal direction are intensively arranged at a narrow interval and end faces for coupling light are arranged in parallel at a wider interval. To 201e, and a rectangular parallelepiped or cubic waveguide clad sheet 300 surrounding the entire surface in the longitudinal direction of the planar waveguide cores 201a to 201e.

  In addition, rectangular diffraction gratings 101a to 101e having second and higher order Bragg scattering orders are formed on the central upper surfaces in the longitudinal direction of the planar waveguide cores 201a to 201e, respectively. Since the diffraction gratings 101a to 101e are intensively arranged at a narrow interval, they correspond to extremely small light emitting surfaces having a rectangular shape or a square shape in a high-luminance light emitting device. Specifically, the width of the planar waveguide cores 201a to 201e is about 5 microns, and the length of the diffraction gratings 101a to 101e in the longitudinal direction is about 2 millimeters. Therefore, 25 microns (5 microns × 5 diffraction gratings 101a to 101e) 101e) A very narrow light emission spot having an area of about 2 mm is formed.

  Further, on the lower surface of the diffraction gratings 101a to 101e, a highly reflective film 600 having substantially the same area as this light emitting spot is formed. Specifically, the high reflection film 600 can be formed of a deposited metal or a dielectric multilayer film. Since the characteristics of the highly reflective film 600 are the same as those described in the first embodiment, the description thereof is omitted here.

  Further, on the upper surfaces of the diffraction gratings 101a to 101e, there is formed a structure 900 in which a powder phosphor such as YAG having substantially the same area as the light emission spot is solidified with a transparent resin.

  End faces 701a to 701e that enable optical coupling are provided at one ends of the planar waveguide cores 201a to 201e, respectively. The other end is also provided with end faces 701a 'to 701e' having similar functions.

  Further, the semiconductor lasers 51a to 51e and the semiconductor lasers 51a 'to 51e' are disposed close to the one end surfaces 701a to 701e and the other end surfaces 701a 'to 701e', respectively. In place of the semiconductor laser, an LED (Light Emitting Diode) may be used. Since the characteristics of the semiconductor laser are the same as those described in the first embodiment, description thereof is omitted here.

  Unlike the first embodiment, all the semiconductor lasers 51a to 51e and 51a 'to 51e' in the present embodiment output blue light. The period of the diffraction gratings 101a to 101e is designed to match the period of the same wavelength as that of blue.

  Next, the operation of the high brightness light emitting device in this embodiment will be described.

  The blue light output from the semiconductor lasers 51a and 51a 'is coupled to the end faces 701a and 701a' of the planar waveguide core 201a, respectively. The coupled light (hereinafter referred to as “guided mode light”) travels along the longitudinal direction of the planar waveguide core 201a. As the guided mode light travels, the blue radiation mode light is emitted in the vertical direction substantially perpendicular to the planar waveguide core 201a from the upper and lower surfaces of the position where the diffraction grating 101a is formed. In particular, the radiation mode light emitted from the lower surface is reflected by the high reflection film 600 to the upper surface. The blue light emitted to the upper surface is absorbed by the powdered phosphor mixed in the structure 900 and emitted as radiation mode light having a wavelength converted to yellow. Blue light that has not been wavelength-converted by the powder phosphor is emitted as it is.

  Since the operations of the other planar waveguide cores 201b to 201e are basically the same as the operations described above, the description thereof is omitted here.

  Accordingly, the high brightness light emitting device emits blue and yellow light from the top surface of the structure 900.

  In the present embodiment, the structure for adding the structure 900 to the first embodiment has been described. However, the structure 900 can be similarly added to the second to seventh embodiments. Similar effects can be obtained. The case where it is applied to the second embodiment will be described in the next embodiment.

  Further, instead of the structure 900 described in this embodiment, a crystal material doped with a rare earth element, or an MGC 800 including a YAG phase doped with Ce ions described in the eighth and ninth embodiments. Can be used in the first to seventh embodiments, and the same effects as in the present embodiment can be obtained.

  According to the present embodiment, the diffraction gratings 101a to 101e that can extract radiation mode light are intensively arranged at a narrow interval, so that high-luminance light emission can be realized in a narrow region.

  According to the present embodiment, since the semiconductor lasers 51a to 51e and 51a 'to 51e' are arranged at a distance from each other with a margin, it is possible to prevent the influence of heat generated by the semiconductor laser. Note that light emitted from the diffraction gratings 101a to 101e by being coupled to the planar waveguide cores 201a to 201e is pure visible light having no infrared component, so that almost no heat is generated at the light emission spot.

  According to the present embodiment, the high reflection film 600 emits light emitted from the lower surface of the planar waveguide cores 201a to 201e to the upper surface, so that blue light emission can be efficiently obtained from the upper surface. .

  According to the present embodiment, since the emitted blue light and the yellow light wavelength-converted by the powder phosphor of the structure 900 are diffused above the structure 900, mixed color light including white can be obtained. Is possible.

[Eleventh embodiment]
FIG. 14 is a top view showing a high brightness light emitting device according to the eleventh embodiment. Initially, the structure of the high-intensity light-emitting device in this Embodiment is demonstrated. The present embodiment is a configuration in which a structure 900 in which a powder phosphor is solidified with a transparent resin is further provided in the second embodiment.

  The high-intensity light-emitting device according to the present embodiment is located on twelve planar waveguide cores 201a to 201l arranged radially at a constant angle, and the entire longitudinal surface of the planar waveguide cores 201a to 201l and the radial center portion. A cylindrical waveguide clad sheet 300 is provided to surround the end surface.

  Further, rectangular diffraction gratings 101a to 101l having second and higher order Bragg scattering orders are respectively formed on the upper surfaces in the longitudinal direction of the planar waveguide cores 201a to 201l located at the radial center portions. Since the diffraction gratings 101a to 101l are intensively arranged at a narrow interval, they correspond to a very small light emitting surface having a circular shape in a high luminance light emitting device. Specifically, since the length of the diffraction gratings 101a to 101l in the longitudinal direction is about 2 mm, an extremely narrow light emission spot having a circular region with a radius of about 2 mm is formed.

  Further, on the lower surfaces of the diffraction gratings 101a to 101l, a circular high reflection film 600 having the same area as that of the light emission spot is formed. Since the characteristics of the highly reflective film 600 are the same as those described in the first embodiment, the description thereof is omitted here.

  Further, on the upper surfaces of the diffraction gratings 101a to 101l, there is formed a structure 900 in which a powder phosphor such as YAG having substantially the same area as the light emission spot is solidified with a transparent resin.

  End surfaces 701a to 701l that enable optical coupling are respectively provided at one ends of the planar waveguide cores 201a to 201l that extend radially.

  Further, semiconductor lasers 51a to 51l are arranged close to the end faces 701a to 701l, respectively. In place of the semiconductor laser, an LED (Light Emitting Diode) may be used. Since the characteristics of the semiconductor laser are the same as those described in the first embodiment, description thereof is omitted here.

  Unlike the second embodiment, all the semiconductor lasers 51a to 51l in the present embodiment output blue light. The period of the diffraction gratings 101a to 101l is designed in accordance with the period of the same wavelength as that of blue.

  Next, the operation of the high brightness light emitting device in this embodiment will be described.

  The blue light output from the semiconductor laser 51a is coupled to the end surface 701a of the planar waveguide core 201a. The coupled light (hereinafter referred to as “guided mode light”) travels along the longitudinal direction of the planar waveguide core 201a. As the guided mode light travels, the blue radiation mode light is emitted in the vertical direction substantially perpendicular to the planar waveguide core 201a from the upper and lower surfaces of the position where the diffraction grating 101a is formed. In particular, the radiation mode light emitted from the lower surface is reflected by the high reflection film 600 to the upper surface. The blue light emitted to the upper surface is absorbed by the powdered phosphor mixed in the structure 900 and emitted as radiation mode light having a wavelength converted to yellow. Blue light that has not been wavelength-converted by the powder phosphor is emitted as it is.

  Since the operations of the other planar waveguide cores 201b to 201l are basically the same as the operations described above, the description thereof is omitted here.

  Accordingly, the high brightness light emitting device emits blue and yellow light from the top surface of the structure 900.

  According to the present embodiment, the diffraction gratings 101a to 101l from which radiation mode light can be extracted are intensively arranged at narrow intervals, so that high-luminance light emission can be realized in a narrow region.

  According to the present embodiment, since the semiconductor lasers 51a to 51l are arranged at a distance from each other with a margin, it is possible to prevent the influence of heat generated by the semiconductor laser. Note that the light emitted from the diffraction gratings 101a to 101l by being coupled to the planar waveguide cores 201a to 201l is pure visible light having no infrared component, so that almost no heat is generated at the light emission spot.

  According to the present embodiment, the high reflection film 600 emits light emitted from the lower surface of the planar waveguide cores 201a to 201l to the upper surface, so that blue light emission can be efficiently obtained from the upper surface.

  According to the present embodiment, since the emitted blue light and the yellow light wavelength-converted by the powder phosphor of the structure 900 are diffused above the structure 900, mixed color light including white can be obtained. Is possible.

It is a top view which shows the high-intensity light emitting device in 1st Embodiment. It is sectional drawing of a planar waveguide core. It is a top view which shows the high-intensity light emitting device in 2nd Embodiment. It is a top view which shows the high-intensity light emitting device in 3rd Embodiment. It is sectional drawing of a planar waveguide core and a highly reflective mirror. It is a top view which shows the high-intensity light emitting device in 4th Embodiment. It is a top view which shows the high-intensity light emitting device in 5th Embodiment. It is a top view which shows the high-intensity light emitting device in 6th Embodiment. It is a perspective view which shows MGC comprised by the YAG phase and the alumina phase. It is a top view which shows the high-intensity light emitting device in 7th Embodiment. It is a top view which shows the high-intensity light emitting device in 8th Embodiment. It is a top view which shows the high-intensity light emitting device in 9th Embodiment. It is a top view which shows the high-intensity light emitting device in 10th Embodiment. It is a top view which shows the high-intensity light emitting device in 11th Embodiment. It is a perspective view which shows the conventional light emitting element.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... Rectangular waveguide core 11 ... Diffraction grating 50 ... Semiconductor laser 51a-51l, 51'a-51l '... Semiconductor laser 100, 101a-101l ... Diffraction grating 200, 201a-201l ... Waveguide core, planar waveguide core 300 ... clad sheet, waveguide clad sheet 400, 401 ... waveguide mode light 500, 501 ... radiation mode light 600 ... high reflection film, oblique reflector 701a to 701l ... end face 800 ... MGC
801 ... YAG phase 802 ... Alumina phase 900 ... Structure

Claims (2)

A plurality of waveguide structures in which a part of the waveguide structure is intensively arranged at a narrow interval with respect to another waveguide structure, and end faces for coupling light are arranged at a wider interval;
A plurality of laser diodes each disposed at a position corresponding to the end face;
An oblique reflector that is formed on an end face of the intensively arranged waveguide structure and takes out each laser diode light guided by the waveguide structure;
A phosphor excited by the laser diode light concentrated and extracted by the oblique reflector;
A high-intensity light-emitting device comprising: The high-luminance light-emitting device according to claim 1 , further comprising a reflective film that reflects the extracted laser diode light .