JP4952002B2 - Ion beam irradiation equipment - Google Patents

Description

  The present invention relates to an ion beam irradiation apparatus that performs processing such as ion implantation by irradiating a substrate with an ion beam extracted from an ion source. When ion implantation is performed on a substrate, this apparatus is also called an ion implantation apparatus or an ion doping (registered trademark) apparatus.

  When the substrate is irradiated with an ion beam and subjected to processing such as ion implantation, it is important that the ion beam current distribution is uniform in order to improve the uniformity of the substrate processing.

  As a technique for improving the uniformity of the ion beam current distribution, for example, in Patent Document 1, each filament current of an ion source having a plurality of filaments is controlled to uniform the one-dimensional ion beam current distribution at the substrate position. Techniques that improve performance are described.

  Further, Patent Document 2 discloses an ion extracted from an ion source by causing a one-dimensionally scanned electron beam to enter a plasma generation container of an ion source and ionizing a gas by the electron beam to generate a plasma. A technique for improving the one-dimensional beam current distribution of the beam is described.

JP 2000-315473 A (paragraphs 0012-0015, FIG. 1) Japanese Patent Laying-Open No. 2005-38689 (paragraphs 0006-0008, FIG. 1)

  Both of the techniques described in Patent Documents 1 and 2 can only improve the ion beam current distribution in one dimension (specifically, the longitudinal direction of the cross-sectional shape of the ion beam). That is, the technique described in Patent Document 1 cannot improve the uniformity of the two-dimensional ion beam current distribution. The technique described in Patent Document 2 cannot improve the uniformity of the two-dimensional ion beam current distribution. Moreover, even if the uniformity of the ion beam extracted from the ion source can be improved, there is no guarantee that the uniformity of the ion beam current distribution at the substrate position can be ensured.

  For more advanced substrate processing, it is important to improve the uniformity of the two-dimensional ion beam current distribution at the substrate position.

  For example, when the ion beam has a rectangular cross-sectional shape in which the dimension in the X direction (longitudinal direction) in the plane intersecting the traveling direction is larger than the dimension in the Y direction orthogonal to the X direction, In order to irradiate the entire surface of the substrate with the ion beam, the substrate may be mechanically scanned along the Y direction (mechanical scan). Of course, the uniformity of the ion beam current distribution in the X direction is important. In particular, when the uniformity in the Y direction is poor, such an ion beam usually has a non-uniform spread in the base in the Y direction. In order to avoid the influence of the poor uniformity portion, The distance of overscan in the Y direction (scanning out of the ion beam) must be increased. As a result, the scanning distance of the substrate is increased and the apparatus is increased in size.

  In addition, regardless of the cross-sectional shape of the ion beam and whether or not the substrate is scanned, if the uniformity of the ion beam current distribution in the X direction or Y direction is poor, the substrate surface at a location where the ion beam current is large is irradiated with the ion beam. The accompanying charge-up (charging) is concentrated, and the possibility of damaging the substrate surface (for example, a semiconductor device or the like formed on the substrate surface) due to the occurrence of discharge at that location is increased.

  In addition, when the size of the ion beam is set so as to cover the entire substrate and the substrate is not scanned, the two-dimensional uniformity of the ion beam current distribution is required in order to process the entire surface of the substrate with good uniformity. It is especially important to be good.

  Accordingly, the main object of the present invention is to provide an ion beam irradiation apparatus capable of improving the uniformity of the two-dimensional ion beam current distribution at the substrate position.

  A first ion beam irradiation apparatus according to the present invention includes an ion source having a plurality of filaments for generating arc discharge in a plasma generation container into which a gas is introduced, and the ion beam extracted from the ion source is a substrate. An ion beam irradiation apparatus configured to irradiate a gas to generate an electron beam, emit the electron beam into a plasma generation container of the ion source, and ionize the gas by the electron beam to generate plasma. One or more electron beam sources that scan the electron beam two-dimensionally in the plasma generation container, and an extraction voltage for controlling the amount of generation of the electron beam and a scanning voltage for two-dimensional scanning are applied to each electron beam source. Each of which has one or more power supplies for electron beams and a plurality of monitor points distributed two-dimensionally, and corresponds to the position of the substrate. An ion beam monitor that measures a two-dimensional ion beam current distribution of the ion beam at a position, and the electron beam power source is controlled based on measurement data from the ion beam monitor, thereby generating from each electron beam source The scanning of the electron beam at a position in the ion source corresponding to a monitor point where the ion beam current measured by the ion beam monitor is relatively large while keeping the amount and scanning trajectory of the electron beam to be two-dimensionally substantially constant. Performing at least one of relatively increasing the speed and relatively decreasing the scanning speed of the electron beam at a position in the ion source corresponding to a monitor point where the measured ion beam current is relatively small; Has a function to equalize the two-dimensional ion beam current distribution measured by the ion beam monitor. It and a by which the control device is characterized in.

  In the first ion beam irradiation apparatus, a two-dimensional ion beam current distribution at a position corresponding to the substrate is measured by an ion beam monitor. The control device controls each electron beam power source based on the measurement data from the ion beam monitor, controls the scanning speed of the electron beam in the plasma generation container of the ion source, and generates the electron beam by the electron beam. Control the density of the plasma. Specifically, the two-dimensional quantity and scanning trajectory of the electron beam generated from each electron beam source is substantially constant, and the monitor point corresponds to a monitor point with a relatively large ion beam current measured by the ion beam monitor. Relatively increasing the scanning speed of the electron beam at the ion source position and relatively decreasing the scanning speed of the electron beam at the ion source position corresponding to the monitor point where the measured ion beam current is relatively small. By performing at least one of the above, control is performed to equalize the two-dimensional ion beam current distribution measured by the ion beam monitor. Thereby, the uniformity of the two-dimensional ion beam current distribution at the substrate position can be improved.

  (A) a function of supplying the scanning device to each electron beam power source with a scanning signal that is a source of the scanning voltage supplied from the electron beam power source to each electron beam source; The function of calculating the average value of the measured ion beam current of the two-dimensional distribution, and the filament current passed through each filament of the ion source so that the calculated average value is substantially equal to a predetermined set ion beam current A function of uniformly controlling, a function of calculating an error of a two-dimensional distribution that is a difference between the ion beam current of the two-dimensional distribution measured by the ion beam monitor and the set ion beam current, and the calculated error being a predetermined value A function for determining the monitor point on the ion beam monitor that is larger than the allowable error and the sign of the error at the monitor point, and corresponding to the determined monitor point The scanning of the electron beam at a scanning voltage at which the measured ion beam current corresponds to a larger monitoring point based on the function of determining the electron beam source and its scanning voltage and the sign of the determined error. The speed is increased in proportion to the magnitude of the error while keeping the scanning trajectory of the electron beam substantially constant, and the measured ion beam current corresponds to a smaller monitoring point. The scanning speed of the electron beam is reduced in proportion to the magnitude of the error while keeping the scanning trajectory of the electron beam substantially constant, so that substantially all monitoring points on the ion beam monitor are A function of shaping the waveform of the scanning signal so that the error is equal to or less than the allowable error; and a function of saving the data of the shaped scanning signal and the data of the filament current. And shall, and (b) the power for each electron beam may be those for amplifying a scan signal supplied an amplifier to create the scan voltage from the control unit.

  “Substantially all” means that some non-critical monitoring points may be excluded, although all are preferred. The same applies to the following.

  A second ion beam irradiation apparatus according to the present invention includes an ion source having a plurality of filaments for generating arc discharge in a plasma generation container into which a gas is introduced, and the ion beam extracted from the ion source is a substrate. An ion beam irradiation apparatus configured to irradiate a gas to generate an electron beam, emit the electron beam into a plasma generation container of the ion source, and ionize the gas by the electron beam to generate plasma. One or more electron beam sources that scan the electron beam two-dimensionally in the plasma generation container, and an extraction voltage for controlling the amount of generation of the electron beam and a scanning voltage for two-dimensional scanning are applied to each electron beam source. Each of which has one or more power supplies for electron beams and a plurality of monitor points distributed two-dimensionally, and corresponds to the position of the substrate. An ion beam monitor that measures a two-dimensional ion beam current distribution of the ion beam at a position, and the electron beam power source is controlled based on measurement data from the ion beam monitor, thereby generating from each electron beam source The electron beam at a position in the ion source corresponding to a monitor point having a relatively large ion beam current measured by the ion beam monitor while keeping the scanning speed and scanning trajectory in two dimensions of the electron beam to be substantially constant. Performing at least one of relatively reducing the generation amount and relatively increasing the generation amount of the electron beam at the position in the ion source corresponding to the monitor point where the measured ion beam current is relatively small. Has a function to uniformize the two-dimensional ion beam current distribution measured by the ion beam monitor. It and a by which the control device is characterized in.

  In the second ion beam irradiation apparatus, a two-dimensional ion beam current distribution at a position corresponding to the substrate is measured by an ion beam monitor. Then, the control device controls each electron beam power source based on the measurement data from the ion beam monitor, controls the generation amount of the electron beam from the electron beam source, and uses the electron beam in the plasma generation container. Controls the density of the generated plasma. Specifically, the two-dimensional scanning speed and scanning trajectory of the electron beam generated from each electron beam source is maintained substantially constant, and it corresponds to a monitor point with a relatively large ion beam current measured by the ion beam monitor. The amount of electron beam generated at the ion source position is relatively small, and the amount of electron beam generated at the ion source position corresponding to the monitor point where the measured ion beam current is relatively small is relatively large. By performing at least one of the above, control is performed to equalize the two-dimensional ion beam current distribution measured by the ion beam monitor. Thereby, the uniformity of the two-dimensional ion beam current distribution at the substrate position can be improved.

  (A) a function of supplying the control device with an extraction signal that is a source of the extraction voltage supplied from the electron beam power source to the electron beam source to the electron beam power source; The function of calculating the average value of the measured ion beam current of the two-dimensional distribution, and the filament current passed through each filament of the ion source so that the calculated average value is substantially equal to a predetermined set ion beam current A function of uniformly controlling, a function of calculating an error of a two-dimensional distribution that is a difference between the ion beam current of the two-dimensional distribution measured by the ion beam monitor and the set ion beam current, and the calculated error being a predetermined value A function for determining the monitor point on the ion beam monitor that is larger than the allowable error and the sign of the error at the monitor point, and the determined monitor point Based on the function of determining the corresponding electron beam source and its scanning voltage, and the positive or negative of the determined error, the extracted voltage at the scanning voltage corresponding to a larger monitoring point is measured ion beam current. Decreasing in proportion to the magnitude of the error, and increasing the extraction voltage at the scanning voltage corresponding to the monitor point where the measured ion beam current is smaller in proportion to the magnitude of the error. A function of shaping the waveform of the extraction signal so that the error is less than or equal to the allowable error at substantially all monitor points on the ion beam monitor, data of the extraction signal after the shaping, and the filament current And (b) each of the electron beam power supplies amplifies an extraction signal supplied from the control device and outputs the extraction electric power. It may be assumed to have the amplifier to make.

  In the first and second ion beam irradiation apparatuses, the filaments of the ion source extend in a straight line in the y direction and are arranged side by side in the x direction substantially perpendicular to the y direction. It is also possible to adopt a configuration in which the electron beam sources are respectively disposed between them.

  According to the first to fourth aspects of the present invention, since the configuration is as described above, the uniformity of the two-dimensional ion beam current distribution at the substrate position can be improved. As a result, more advanced substrate processing is possible.

  According to the fifth aspect of the present invention, there is a further effect that it is easy to increase the cross-sectional dimension of the ion beam. As a result, it becomes easier to process larger substrates.

  FIG. 1 is a schematic perspective view showing an embodiment of an ion beam irradiation apparatus according to the present invention. In this ion beam irradiation apparatus, the ion beam 4 extracted from the ion source 2 is subjected to mass separation through a mass separator (for example, a mass separation magnet) 6 and further accelerated or decelerated as necessary, and then is irradiated to the irradiation position. A certain substrate 8 is irradiated so that the substrate 8 is subjected to processing such as ion implantation. The path of the ion beam 4 is housed in a vacuum container (not shown) and kept in a vacuum atmosphere. In some cases, the mass separator 6 is not provided.

  In this example, as shown in FIG. 2, the ion beam 4 applied to the substrate 8 has a dimension in the X direction (longitudinal direction, eg, vertical direction) in a plane intersecting (eg, orthogonal) with the traveling direction. It has a rectangular cross section that is larger than the dimension in the Y direction (for example, the horizontal direction) orthogonal to the X direction. The ion beam 4 having such a shape may be called a ribbon-like, sheet-like, or belt-like ion beam. However, it does not mean that the dimension in the Y direction is as thin as paper. For example, the dimension in the X direction is about 400 mm to 800 mm, and the dimension in the Y direction is about 100 mm to 200 mm.

  The substrate 8 is, for example, a semiconductor substrate or a glass substrate.

  In this embodiment, the substrate 8 is mechanically reciprocated (mechanically scanned) along the Y direction as indicated by an arrow A by a driving device (not shown). The dimension of the ion beam 4 in the X direction is slightly larger than the dimension of the substrate 8 in the same direction, and the ion beam 4 can be irradiated onto the entire surface of the substrate 8 by this and the reciprocating drive.

  If mechanical scanning of the substrate 8 is used together as in this embodiment, the entire surface of the larger substrate 8 can be irradiated with the ion beam 4, but mechanical scanning of the substrate 8 is not performed. Also good. In that case, the cross-sectional shape and cross-sectional dimension of the ion beam 4 extracted from the ion source 2 may be set in accordance with the substrate 8.

  As will be described in detail later, a plurality of electron beam sources G are provided in the ion source 2 (more specifically, the plasma generation container 18 constituting the ion source 2). Each electron beam source G is supplied with an extraction voltage for controlling the amount of generated electron beams and a scanning voltage for two-dimensional scanning from a plurality of electron beam power supplies 14 corresponding thereto. The number of the electron beam source G and the electron beam power source 14 is two in this embodiment, but is not limited to this.

  An ion beam monitor 10 is provided at a position corresponding to the position of the substrate 8 at the ion beam irradiation position. However, they do not get in the way of each other. For example, when the ion beam 4 is measured by the ion beam monitor 10, the substrate 8 may be moved to a position that does not interfere with the measurement. The ion beam monitor 10 may be moved when the substrate 8 is processed.

  This ion beam irradiation apparatus is further provided with a control device 12 for controlling each electron beam power source 14 based on measurement data DA from the ion beam monitor 10. In this embodiment, the control device 12 can also control the filament current If described later.

  As shown in FIG. 3, a plurality of (three in this embodiment) ion sources 2 are provided in a plasma generation vessel 18 having, for example, a rectangular parallelepiped shape, into which plasma generation gas (including vapor) 20 is introduced. The filaments 22 and the plasma generation vessel 18 that also serves as an anode generate an arc discharge to ionize the gas 20 to generate a plasma 24. From the plasma 24, an extraction electrode The system 26 is configured to extract the ion beam 4. The extraction electrode system 26 has, for example, one or more porous electrodes. The shape of the ion beam extraction region 28 is a shape corresponding to the cross-sectional shape of the ion beam 4, in this example, an elongated rectangle as shown in FIG. 4.

The gas 20 is a gas containing a desired element (for example, a dopant such as B, P, or As). More specific examples include gases containing source gases such as BF ₃ , PH ₃ , AsH ₃ , and B ₂ H ₆ .

  A magnet 30 for forming a multipolar magnetic field (multicusp magnetic field) for generating and maintaining the plasma 24 is disposed around the plasma generation vessel 18. The ion source 2 having such a structure is also called a bucket type ion source (or a multipole magnetic field type ion source).

  4 and 5, the filaments 22 of the ion source 2 extend linearly in the y direction, and are arranged in parallel with each other in the x direction substantially orthogonal to the y direction. ing. In the meantime, for example, an electron beam source G is arranged in the middle of both filaments 22.

  In this specification, the orthogonal direction (orthogonal coordinates) in the ion source 2 is represented by lowercase letters x and y, and the orthogonal direction (orthogonal coordinates) in the substrate 8 and the ion beam monitor 10 is represented by uppercase letters X and Y. Represents.

  As shown in FIG. 5, each filament 22 is heated by supplying a filament current If from a voltage variable filament power supply 34 via a current introduction terminal 32 and emits thermoelectrons. A DC arc power source 36 for generating arc discharge is connected between one end of the filament 22 and the plasma generation vessel 18. In this embodiment, the filament power supply 34 can change (increase / decrease) the filament current If in response to the filament current control signal Sf supplied from the control device 12.

  One filament power supply 34 is provided for each filament 22. In this example, the arc power source 36 is shared by all the filaments 22, but one arc power source 36 may be provided for each filament 22. If it is shared, the configuration can be simplified.

  As shown in FIG. 6, each electron beam source G includes, in this embodiment, a filament 40 that emits electrons (thermoelectrons), an anode 44 that extracts the electrons as an electron beam 38, and between the two 40, 44. An extraction electrode 42 that is arranged and controls the amount of electron beam generation without changing the energy of the electron beam 38, a pair of scanning electrodes 46 that scan the electron beam 38 to be extracted outside in the x direction, and an electron beam 38 to be extracted outside. And a pair of scanning electrodes 48 (only one of them is shown in the drawing) for scanning in the y direction.

  With such a configuration, each electron beam source G generates an electron beam 38 and emits it into the plasma generation container 18 of the ion source 2, and ionizes the gas 20 by the electron beam 38 to generate the plasma 24. Can be generated. In addition, the electron beam 38 can be scanned two-dimensionally in the ion source 2 (more specifically, in the plasma generation container 18). An example of the scanning locus is shown in a simplified manner in FIG. In short, the electron beam source G is for correcting the density distribution of the plasma 24 generated by the filament 22. In this embodiment, a plurality of such electron beam sources G, more specifically two, are provided. However, the number is not limited to two, and one or more is optional.

  In the example shown in FIG. 6, each electron beam power source 14 is a filament power source 50 that heats the filament 40, and an extraction power source that applies a DC extraction voltage Ve for controlling the amount of electron beam generation between the filament 40 and the extraction electrode 42. 52, an energy control power supply 54 that applies a DC anode voltage Va between the filament 40 and the anode 44, an amplifier 56 that applies a scanning voltage Vx for x-direction scanning between the pair of scanning electrodes 46, and a pair of scanning electrodes And an amplifier 58 for applying a scanning voltage Vy for scanning in the y direction. As an example, the control device 12 has a function of supplying scanning signals Sx and Sy that are sources of the scanning voltages Vx and Vy, and the amplifiers 56 and 58 include the scanning signals Sx and Sy supplied from the control device 12. Are respectively amplified (voltage amplified) to produce (output) the scanning voltages Vx and Vy, respectively. In this example, the scanning voltages Vx and Vy are swung in the ± direction with reference to the potential of the anode 44. With such a configuration, each electron beam power source 14 supplies, to each electron beam source G corresponding thereto, an extraction voltage Ve for controlling the generation amount of the electron beam 38, scanning voltages Vx, Vy for two-dimensional scanning, and the like. Can be supplied.

  In short, the energy of the electron beam 38 taken out from the electron beam source G is determined by the magnitude of the anode voltage Va, and the energy is Va [eV]. The energy of the electron beam 38 is set such that the gas 20 can be ionized by electron impact in the plasma generation container 18. For example, when the gas 20 is the kind of gas as described above, it may be set to about 500 eV to 3 keV, more specifically about 1 keV.

  The ion beam monitor 10 has a plurality of monitor points distributed two-dimensionally in the X and Y directions, and measures the two-dimensional ion beam current distribution of the ion beam 4 at a position corresponding to the position of the substrate 8. It is. For example, as shown in FIG. 8, the ion beam monitor 10 includes a plurality (a large number) of Faraday cups 60 arranged in a two-dimensional manner in the X and Y directions. Each Faraday cup 60 corresponds to each monitor point. However, FIG. 8 is a schematic diagram, and the number of Faraday cups 60 is not limited to that shown in FIG.

  The monitor points are not points that do not have a mathematical area, but are small measurement points having a certain area, such as a plurality of points in the ion beam monitor 10.

  FIG. 7 is a simplified diagram from the ion source 2 to the ion beam monitor 10 in FIG. Reference numeral 70 collectively represents an ion beam transport system. Although the x direction in the ion source 2 and the X direction in the ion beam monitor 10 can be substantially parallel to each other, the ion beam transport system 70 is not necessarily linear (see FIG. 1). The y direction in FIG. 7 and the Y direction in the ion beam monitor 10 are not necessarily parallel to each other as shown in FIG.

  In this embodiment, the control device 12 is composed of a computer having a CPU, a storage device, an input AD converter, an output DA converter, and the like. The control device 12 has a function of performing the following control (1) or (2). (1) and (2) Both controls are not performed simultaneously.

(1) Electron Beam Scanning Speed Control In this case, the control device 12 controls the electron beam power source 14 based on the measurement data DA from the ion beam monitor 10, thereby generating electrons generated from each electron beam source G. While maintaining the two-dimensional amount and scanning trajectory of the beam 38 substantially constant, (a) the electron beam 38 at a position in the ion source corresponding to a monitor point where the ion beam current measured by the ion beam monitor 10 is relatively large. And (b) relatively reducing the scanning speed of the electron beam 38 at the position in the ion source corresponding to the monitor point where the measured ion beam current is relatively small. And the function of making the two-dimensional ion beam current distribution measured by the ion beam monitor 10 uniform.

(2) Control of Electron Beam Amount In this case, the control device 12 controls the electron beam power source 14 based on the measurement data DA from the ion beam monitor 10, thereby generating an electron beam generated from each electron beam source G. (A) the electron beam 38 at a position in the ion source corresponding to a monitor point where the ion beam current measured by the ion beam monitor 10 is relatively large, while keeping the scanning speed and scanning trajectory in two dimensions of the 38 substantially constant. And (b) relatively increasing the generation amount of the electron beam 38 at the position in the ion source corresponding to the monitor point where the measured ion beam current is relatively small. And the function of making the two-dimensional ion beam current distribution measured by the ion beam monitor 10 uniform.

  In both cases (1) and (2), the control device 12 may perform at least one of the controls (a) and (b). This is preferable because the control for uniformizing becomes faster. The “function” can be rephrased as “means”. The same applies to other functions to be described later.

  A more specific example of the controls (1) and (2) will be described below.

(1) Electron beam scanning speed control In this case, the electron beam power supply 14 shown in FIG. 6 is used. That is, the extraction voltage Ve output from the extraction power supply 52 is kept constant, and the amount of electron beam generated from the electron beam source G is kept constant. The anode voltage Va output from the energy control power supply 54 is also kept constant, and the energy of the electron beam 38 is kept constant. In this case, flowcharts of control performed using the control device 12 are shown in FIGS.

  Prior to the control, an electron beam source G sharing the monitoring point P (X, Y) on the ion beam monitor 10 and increasing / decreasing the ion beam current at the monitoring point P (X, Y) and the electron beam source G The correspondence relationship with the scanning voltages (Vx, Vy) supplied to the control device 12 is examined in advance and stored in the control device 12. (X, Y) represents a two-dimensional position on the X and Y coordinates.

  This correspondence is based on an arbitrary monitor point P (X, Y) on the ion beam monitor 10, which of the electron beam sources G increases or decreases the ion beam current at the monitor point P (X, Y). The combination of the scanning voltages Vx and Vy supplied to the electron beam source G, ie, (Vx, Vy) is a relationship of what values, and can be expressed by the following equation (1). The subscripts i, j, k, m, and n represent more specific positions and are integers. This correspondence can be determined, for example, by examining at which scanning voltage (Vx, Vy) of which electron beam source G the ion beam current at which monitor point P (X, Y) increases or decreases. it can. Since this correspondence is uniquely determined by the device configuration, it may be determined once unless the device configuration is changed. Then, data representing this correspondence relationship may be stored in the control device 12 (more specifically, the storage device).

[Equation 1]
_{P (X i, Y j)} ← → (G k, Vx m, Vy n)

  The subsequent steps will be described with reference to FIG. The ion beam current Iset to be irradiated onto the substrate 8 and its allowable error ε are set in the control device 12 (step 100). This set ion beam current Iset is called a set ion beam current. The allowable error ε allows to what extent the actual ion beam current, specifically, the ion beam current Imon (X, Y) measured by the ion beam monitor 10 is deviated from the set ion beam current Iset. That's it.

  Next, the filament condition is roughly set (step 101). This is because the ion beam 4 is extracted from the ion source 2 using only the filament 22 without using the electron beam source G to generate the plasma 24, and the ion beam current Imon (X, Y) measured by the ion beam monitor 10 is obtained. It is to set it roughly manually. Specifically, each filament power source 34 is adjusted to roughly set the filament current If that flows to each filament 22 of the ion source 2. At this time, the adjustment of the arc current flowing from the arc power source 36 may be used in combination. In principle, this rough setting may be performed once as long as the configuration of the ion source 2 and the ion beam irradiation apparatus is not changed.

  If the rough setting of the filament condition is performed more precisely, the subsequent control (for example, the control after step 105) can be completed more quickly. The same applies to the example of FIG.

  For example, in the rough setting, the measurement ion beam current Imon (X, Y) is set to be close to the set ion beam current Iset and the distribution thereof is uniform to some extent at all the monitor points P (X, Y). Is preferred. A schematic example of such a case is shown in FIGS. 12 and 13A. 12 and 13 show distributions on the X axis shown in FIG. 8 (that is, the position where Y = 0). FIG. 12 shows an example in which the measured ion beam current Imon (X, Y) is slightly smaller than the set ion beam current Iset, and FIG. 13A shows an example in which it is slightly increased. Either can be set.

Roughly speaking, as shown in FIG. 12, the peak position of the measured ion beam current Imon (X, Y) substantially corresponds to the position of the filament 22. AG ₁ is a contribution region of one electron beam source G, and AG ₂ is a contribution region of the other electron beam source G. However, this figure is only a schematic diagram.

  Next, scanning signals Sx and Sy having an initial waveform are supplied from the control device 12 to each electron beam power source 14 (more specifically, the amplifiers 56 and 58), and scanning voltages Vx and Vy having the same waveform are supplied. Output (step 102). This initial waveform is, for example, a triangular wave. For example, the frequency of the scanning signal Sx is 10 kHz, and that of the scanning signal Sy is 1 kHz.

  Each electron beam source G generates an electron beam 38 that is scanned two-dimensionally with the initial waveform. Using this and the filament 22, a plasma 24 is generated in the ion source 2 and the ion beam 4 is extracted (step 103). Then, the ion beam 4 is received by the ion beam monitor 10, and the ion beam current Imon (X, Y) is measured (step 104). Examples thereof are those shown in FIG. 12 and FIG. 13A described above. Hereinafter, FIG. 13A will be described as an example.

  Further, the control device 12 performs processing such as the following calculation. That is, based on the measurement data DA from the ion beam monitor 10, the average value Iave of the two-dimensional distribution ion beam current Imon (X, Y) measured by the ion beam monitor 10 is calculated (step 105). This is one value.

  Next, the average value Iave and the set ion beam current Iset are compared to determine whether or not they are substantially equal (step 106). If they are substantially equal, the process proceeds to step 108; If YES, go to step 107. “Substantially equal” means equal or within a predetermined small error range. It can be rephrased as “almost equal”.

  Step 107 is a filament current control subroutine, the contents of which are shown in FIG. Here, first, it is determined whether or not the average value Iave is larger than the set ion beam current Iset (step 200). If larger, the process proceeds to step 201. Otherwise, the process proceeds to step 202.

  In step 201, each filament power source 34 is controlled by the filament control signal Sf supplied from the control device 12, and the filament current If flowing through all the filaments 22 of the ion source 2 is uniformly (in other words, uniformly). That is, only the same amount. In step 202, contrary to the above, the filament current If flowing through all the filaments 22 is uniformly increased by a predetermined amount. The predetermined amount is, for example, about 1 to 2% of the filament current If at the end of rough setting of the filament conditions (step 101). If this predetermined amount is increased, the control becomes faster but the risk of not converging increases. Conversely, if the predetermined amount is decreased, the control becomes slower but the above-mentioned fear disappears.

  However, the control of steps 100 to 111 including the filament current control subroutine (step 107) and the electron beam scanning speed control subroutine (step 110) to be described later is not performed in real time when the substrate 8 is irradiated with the ion beam. The process may be performed at an appropriate time before the process of 8 or at the time of interruption, and the speed of the control hardly poses a problem. Therefore, it is only necessary to perform the control that places importance on stability and certainty rather than the speed. For example, it may take minutes. The same applies to the control shown in FIGS.

  After the filament current control subroutine in step 107, the process returns to step 105, and the above control is repeated until YES is determined in step 106. As a result, the average value Iave is substantially equal to the set ion beam current Iset. A schematic example of this state is shown in FIG. 13B. Then, the process proceeds to Step 108.

  In step 108, an error Ierr (X, Y) of the two-dimensional distribution, which is the difference between the measured ion beam current Imon (X, Y) of the two-dimensional distribution and the set ion beam current Iset, is calculated according to the following equation, for example.

[Equation 2]
Ierr (X, Y) = Imon (X, Y) −Iset

  Next, it is determined whether or not the magnitude (absolute value) | Ierr (X, Y) | of the error is equal to or less than the allowable error ε at all monitor points P (X, Y) (step 109). If there is at least one point that is not below, the process proceeds to step 110, and if not, the process proceeds to step 111.

  However, although it is preferable to determine all the monitor points P (X, Y) as in this embodiment, the determination on some unimportant monitor points P (X, Y) may be excluded. Absent. That is, substantially all the monitor points may be determined.

  Step 110 is an electron beam scanning speed control subroutine, the contents of which are shown in FIG. Here, first, determination of a monitor point P (X, Y) in which the magnitude | Ierr (X, Y) | of the error is larger than the allowable error ε (in other words, specific; hereinafter the same), and the large monitor point The sign of the error Ierr (X, Y) at P (X, Y) is determined (step 300). As can be seen from Equation 2, in this example, the measured ion beam current Imon (X, Y) is positive when it is larger than the set ion beam current Iset, and negative when it is small. See also FIG. 13B. The number of monitoring points P (X, Y) determined as described above is usually large at the initial stage of control, and decreases as the control in steps 105 to 109 proceeds.

  Next, the electron beam source G corresponding to each of the determined monitor points P (X, Y) and its scanning voltages Vx and Vy are determined (step 301). This can be done using the correspondence relationship described above (see Equation 1 and its description).

  Next, the scanning speed of the electron beam 38 when the error Ierr (X, Y) is positive and the scanning voltages Vx and Vy corresponding to each monitoring point P (X, Y) is substantially equal to the scanning trajectory of the electron beam 38. While keeping the error constant, the error is increased in proportion to the magnitude | Ierr (X, Y) |, and the error Ierr (X, Y) corresponds to each negative monitor point P (X, Y). The scanning speed of the electron beam 38 at the voltages Vx and Vy is decreased in proportion to the magnitude of the error | Ierr (X, Y) | while keeping the scanning trajectory of the electron beam 38 substantially constant. The waveforms of the scanning signals Sx and Sy are shaped (step 302). As a result, the waveforms of the scanning signals Sx and Sy are somewhat modified from the initial triangular wave. Simply put, the slope at the position where the scanning speed is increased or decreased is a waveform that is increased or decreased from the initial triangular wave.

  In order to perform more precise control, the scanning speed between two points having different scanning speeds is preferably set to a scanning speed obtained by interpolating the scanning speeds of both points.

  When the scanning speed of the electron beam 38 is increased, the generation of the plasma 24 by the electron beam 38 at the increased position is reduced (thinned), and the beam current of the ion beam 4 extracted therefrom is reduced. When the scanning speed of the electron beam 38 is decreased, the generation of the plasma 24 by the electron beam 38 at the decreased position is increased (intensified), and the beam current of the ion beam 4 extracted therefrom is increased.

  Increasing the scanning speed of the electron beam 38 means increasing the temporal change rates dSx / dt and dSy / dt of the scanning signals Sx and Sy, and hence the temporal change rates dVx / dt and dVy / dt of the scanning voltages Vx and Vy. In other words, decreasing the scanning speed means decreasing the same rate of change dSx / dt, dSy / dt, and thus dVx / dt, dVy / dt. Keeping the scanning trajectory of the electron beam 38 substantially constant means that the ratio of the scanning voltages Vx and Vy, for example, Vx / Vy is kept substantially constant, and the scanning direction of the electron beam 38 is substantially constant. It is to keep in. In terms of the scanning signal, the ratio between the scanning signals Sx and Sy, for example, Sx / Sy is kept substantially constant. By keeping the scanning trajectory of the electron beam 38 substantially constant, it is possible to prevent the plasma generation state from being changed due to the change of the scanning trajectory. Control can be performed purely.

  A proportional constant for increasing or decreasing the scanning speed of the electron beam 38 in proportion to the magnitude of the error | Ierr (X, Y) | may be determined as appropriate. Increasing this proportionality constant increases the speed of control, but there is a high risk of not converging. Conversely, if it is decreased, the control will be slowed but the above-mentioned fear disappears.

  Then, the electron beam 38 generated from each electron beam source G is scanned using the scanning signals Sx and Sy after the waveform shaping as described above (step 303). That is, the electron beam 38 is scanned using the scanning signals Vx and Vy obtained by amplifying the scanning signals Sx and Sy after waveform shaping by the amplifiers 56 and 58. As a result, the error Ierr (X, Y) is reduced, and the number of monitor points P (X, Y), which is larger than the allowable error ε, is also reduced. However, the average value Iave of the measured ion beam current Imon (X, Y) may change with the waveform shaping. A schematic example of this state is shown in FIG. 13C.

  Therefore, after the electron beam scanning speed control subroutine in step 110, the process returns to step 105. The above control is repeated until YES is determined in step 109. As a result, the error magnitude | Ierr (X, Y) | becomes less than or equal to the allowable error ε at all (or substantially all) monitor points P (X, Y). In addition, the average value Iave is substantially equal to the set ion beam current Iset (see step 106). A schematic example of this state is shown in FIG. 13D.

  If YES in step 109, the waveform shaping scan signal Sx, Sy data and the filament current If data, and other data as necessary, the control device 12 (more specifically, The data is stored in the storage device (step 111). Thus, the control for making the two-dimensional ion beam current distribution uniform using the control device 12 is completed.

  FIG. 13 shows a process in which the ion beam current distribution in the X direction is made uniform. Since the control is two-dimensional control, the ion beam current distribution in the Y direction is also controlled by the control. It is made uniform in the same way.

  After the homogenization control is completed, the ion beam 4 may be extracted from the ion source 2 using the stored data, if necessary, and an ion beam irradiation process (for example, ion implantation) may be performed on the substrate 8.

  As described above, according to this ion beam irradiation apparatus, the uniformity of the two-dimensional ion beam current distribution at the substrate position can be improved. As a result, more advanced substrate processing is possible.

  For example, when the substrate 8 is mechanically scanned in the Y direction as in this embodiment, the overscan distance of the substrate 8 is set as compared with the case where the uniformity of the ion beam current distribution in the Y direction is poor as described above. As a result, the apparatus can be downsized by reducing the scanning distance of the substrate 8.

  In addition, regardless of the cross-sectional shape of the ion beam 4 and the presence / absence of substrate scanning, the concentration of charge-up on the substrate surface is prevented as compared with the case where the uniformity of the ion beam current distribution in the X direction and Y direction is poor as described above. It becomes possible to do.

  In addition, since the two-dimensional uniformity of the ion beam current distribution is improved, it is possible to perform processing with good uniformity on the entire surface of the substrate without scanning the substrate.

(2) Control of electron beam amount An example of this case will be described mainly with reference to FIGS. In these drawings, the same or corresponding parts as those in the control (1) are given the same reference numerals, and the differences from the control (1) will be mainly described below.

  In this case, the electron beam power supply 14 shown in FIG. 14 is used. The electron beam power supply 14 has an amplifier 62 for applying an extraction voltage Ve for controlling the amount of generated electron beam between the filament 40 and the extraction electrode 42 instead of the DC extraction power supply 52. In this example, the control device 12 has a function of supplying an extraction signal Se as a source of the extraction voltage Ve, and the amplifier 62 amplifies the extraction signal Se supplied from the control device 12 (voltage amplification). ) To produce (output) the extraction voltage Ve. Further, instead of the amplifiers 56 and 58, scanning power sources 66 and 68 for simply outputting triangular wave scanning voltages Vx and Vy, respectively, are provided. That is, in this example, the waveforms and magnitudes of the scanning voltages Vx and Vy are kept constant, and the scanning speed and scanning locus of the electron beam 38 generated from the electron beam source G are kept constant. The anode voltage Va output from the energy control power supply 54 is also kept constant, and the energy of the electron beam 38 is kept constant. The frequencies of the scanning voltages Vx and Vy are, for example, 10 kHz and 1 kHz, respectively, but are not limited thereto.

  Flow charts of control performed using the control device 12 in this case are shown in FIGS. In FIG. 15, step 102 shown in FIG. 9 is replaced with step 112, and step 110 is replaced with step 113. The content of the filament current control subroutine (step 107) is the same as that shown in FIG.

  In step 112, the control device 12 supplies an extraction signal Se having an initial waveform to each electron beam power source 14 (more specifically, each amplifier 62 thereof) to output an extraction voltage Ve having the same waveform. This initial waveform is a DC voltage having a constant voltage value, for example.

  Step 113 is an electron beam amount control subroutine, the contents of which are shown in FIG. Steps 300 and 301 are the same as those in FIG.

  In step 304 following step 301, the extraction voltage Ve when the error Ierr (X, Y) is the scanning voltage Vx, Vy corresponding to each positive monitor point P (X, Y) is expressed as the magnitude of the error | The extraction voltage Ve is decreased in proportion to Ierr (X, Y) | and the scanning voltage Vx, Vy corresponding to each monitor point P (X, Y) where the error Ierr (X, Y) is negative. Then, the waveform of the extraction signal Se is shaped so as to increase in proportion to the magnitude of the error | Ierr (X, Y) |. As a result, the waveform of the extraction signal Se is somewhat modified from the initial constant value. In short, the voltage value at the position where the amount of electron beam is increased or decreased becomes a waveform that increases or decreases from a constant value of the initial waveform.

  When the extraction signal Se and hence the extraction voltage Ve are increased, the amount of the electron beam at the increased position increases, and the generation of the plasma 24 by the electron beam 38 at that position increases (intensifies), and the ion beam extracted therefrom The beam current of 4 increases. When the extraction signal Se and hence the extraction voltage Ve are decreased, the amount of the electron beam at the decreased position is reduced, and the generation of the plasma 24 by the electron beam 38 at that position is reduced (thinned), and the ion beam extracted therefrom. The beam current of 4 becomes smaller.

  A proportional constant for increasing or decreasing the extraction voltage Ve in proportion to the magnitude of the error | Ierr (X, Y) | may be determined as appropriate. Increasing this proportionality constant increases the speed of control, but there is a high risk of not converging. Conversely, if it is decreased, the control will be slowed but the above-mentioned fear disappears.

  Then, the electron beam 38 is generated from each electron beam source G by using the extraction signal Se after waveform shaping as described above (step 305). As a result, the error Ierr (X, Y) is reduced, and the number of monitor points P (X, Y), which is larger than the allowable error ε, is also reduced. Also in this case, the average value Iave of the measured ion beam current Imon (X, Y) may change with the waveform shaping. A schematic example of this state is the same as that shown in FIG. 13C.

  Therefore, after the electron beam amount control subroutine in step 113, the process returns to step 105. The above control is repeated until YES is determined in step 109. As a result, the error magnitude | Ierr (X, Y) | becomes less than or equal to the allowable error ε at all (or substantially all) monitor points P (X, Y). In addition, the average value Iave is substantially equal to the set ion beam current Iset (see step 106). A schematic example of this state is the same as that shown in FIG. 13D.

  If YES in step 109, the control unit 12 (more specifically, stores the data of the extraction signal Se after the waveform shaping and the data of the filament current If, if necessary, other data as necessary. (Step 111). Thus, the control for making the two-dimensional ion beam current distribution uniform using the control device 12 is completed.

  Also according to this embodiment, the uniformity of the two-dimensional ion beam current distribution at the substrate position can be improved. As a result, more advanced substrate processing is possible.

  Although each filament 22 of the ion source 2 may be U-shaped or looped, etc., each filament 22 extends linearly in the y direction as in the above embodiment, and If the electron beam sources G are arranged in parallel in the x direction substantially orthogonal to each other, and the electron beam sources G are respectively disposed therebetween, it becomes easy to increase the sectional dimension of the ion beam 4. As a result, it becomes easier to process a larger substrate 8. In particular, the ion doping (registered trademark) for manufacturing a flat panel display (FPD) is advantageous because it is advantageous for constructing a long ion source 2 for extracting an ion beam 4 having a very large dimension in the longitudinal direction (X direction). Suitable for devices and the like.

  Further, as shown in the example shown in FIG. 17, each electron beam source G is accommodated in a cylinder 72 that is evacuated separately from the inside of the plasma generation container 18 as shown by an arrow B, and the electron beam source G is connected. Dynamic exhaust may be used. By doing so, the degree of vacuum of the electron beam source G can be improved, so that the function of the electron beam source G is deteriorated by the gas 20 (see FIG. 3) introduced into the plasma generation container 18. Can be prevented.

  A mesh electrode 74 may be provided near the front surface of the cylinder 72 as in the example shown in FIG. By doing so, the plasma 24 can be shielded by the mesh electrode 74, so that it is possible to prevent the plasma 24 from entering the electron beam source G and deteriorating the function of the electron beam source G.

  Regardless of whether or not the above-described cylinder 72 and mesh electrode 74 are provided, each electron beam source G is arranged in the vicinity of the outside of the plasma generation container 18, and then the electron beam 38 is introduced into the plasma generation container 18 from there. You may make it discharge | release.

  Further, as described above, the numbers of the filaments 22 and the electron beam sources G are not limited to those in the above embodiment, and may be appropriately selected according to the required cross-sectional dimensions of the ion beam 4. . Furthermore, the arrangement of the filament 22 and the electron beam source G is not limited to that in the above embodiment, and may be determined as appropriate according to the required cross-sectional dimensions of the ion beam 4.

1 is a schematic perspective view showing an embodiment of an ion beam irradiation apparatus according to the present invention. It is a schematic plan view which shows an example of the positional relationship of the board | substrate and ion beam in FIG. It is a schematic sectional drawing which shows an example of a structure of the ion source in FIG. FIG. 4 is a schematic plan view showing an example of the arrangement of filaments and electron beam sources in the ion source shown in FIG. 3 and scanning trajectories of electron beams. It is the schematic which shows an example of the filament and power supply of the ion source shown in FIG. It is a figure which shows an example of a structure of the electron beam source and electron beam power supply in FIG. It is a figure which simplifies and shows from the ion source in FIG. 1 to an ion beam monitor. It is a schematic plan view which shows an example of a structure of the ion beam monitor in FIG. It is a flowchart which shows the more specific example of the content of control which makes uniform two-dimensional ion beam electric current distribution using the control apparatus in FIG. 10 is a flowchart illustrating an example of a filament current control subroutine in FIG. 9. 10 is a flowchart illustrating an example of an electron beam scanning speed control subroutine in FIG. 9. FIG. 10 is a schematic diagram illustrating an example of ion beam current distribution after rough setting of filament conditions in FIG. 9. FIG. 10 is a schematic diagram illustrating a process in which the ion beam current distribution in the X direction is made uniform through the filament current control and the electron beam scanning speed control in FIG. 9. It is a figure which shows the other example of a structure of the electron beam source and electron beam power supply in FIG. It is a flowchart which shows the other specific example of the control content which equalizes two-dimensional ion beam electric current distribution using the control apparatus in FIG. 16 is a flowchart illustrating an example of an electron beam scanning speed control subroutine in FIG. 15. It is a schematic sectional drawing which shows the other example of the arrangement | positioning method of the electron beam source with respect to the plasma production container of an ion source.

Explanation of symbols

2 Ion source 4 Ion beam 8 Substrate 10 Ion beam monitor 12 Controller 14 Electron beam power supply 18 Plasma generation vessel 22 Filament 24 Plasma 34 Filament power supply G Electron beam source 38 Electron beam 46, 48 Scan electrode 56, 58, 62 Amplifier

Claims (5)

An ion beam irradiation apparatus comprising an ion source having a plurality of filaments for generating arc discharge in a plasma generation vessel into which gas is introduced, and configured to irradiate a substrate with an ion beam drawn from the ion source,
An electron beam is generated and emitted into a plasma generation container of the ion source, and the gas is ionized by the electron beam to generate plasma. The electron beam is two-dimensionally generated in the plasma generation container. One or more electron beam sources that scan with
One or more electron beam power supplies for supplying each electron beam source with an extraction voltage for controlling the generation amount of the electron beam and a scanning voltage for two-dimensional scanning;
An ion beam monitor having a plurality of two-dimensionally distributed monitor points and measuring a two-dimensional ion beam current distribution of the ion beam at a position corresponding to the position of the substrate; and measurement from the ion beam monitor By controlling the electron beam power source based on the data, the two-dimensional quantity and scanning trajectory of the electron beam generated from each electron beam source is substantially constant, and the ions measured by the ion beam monitor are measured. A relatively high scanning speed of the electron beam at a position in the ion source corresponding to a monitor point having a relatively large beam current, and a position in the ion source corresponding to a monitor point having a relatively small measured ion beam current At least one of making the scanning speed of the electron beam relatively low at the ion beam, An ion beam irradiation apparatus comprising: a control device having a function of homogenizing a two-dimensional ion beam current distribution measured by a monitor. (A) The control device
A function of supplying a scanning signal, which is a source of the scanning voltage supplied from each electron beam power source to each electron beam source, to each electron beam power source;
A function of calculating an average value of an ion beam current of a two-dimensional distribution measured by the ion beam monitor;
A function of uniformly controlling a filament current flowing through each filament of the ion source so that the calculated average value is substantially equal to a predetermined set ion beam current;
A function of calculating an error of the two-dimensional distribution, which is a difference between the ion beam current of the two-dimensional distribution measured by the ion beam monitor and the set ion beam current;
A function for determining a monitor point on the ion beam monitor in which the calculated error is larger than a predetermined allowable error and a sign of the error at the monitor point;
A function of determining the electron beam source corresponding to the determined monitor point and its scanning voltage;
Based on the sign of the determined error, the scanning speed of the electron beam at the scanning voltage corresponding to the monitor point where the measured ion beam current is larger is kept substantially constant. On the other hand, the scanning speed of the electron beam at the scanning voltage corresponding to the monitor point where the measured ion beam current corresponds to a smaller monitor point is increased in proportion to the magnitude of the error. While maintaining substantially constant, the scanning signal is reduced in proportion to the magnitude of the error so that the error is less than or equal to the tolerance at substantially all monitor points on the ion beam monitor. The function of shaping the waveform of
A function of storing the data of the scanning signal after the shaping and the data of the filament current;
(B) The ion beam irradiation apparatus according to claim 1, wherein each of the electron beam power supplies includes an amplifier that amplifies a scanning signal supplied from the control device to generate the scanning voltage. An ion beam irradiation apparatus comprising an ion source having a plurality of filaments for generating arc discharge in a plasma generation vessel into which gas is introduced, and configured to irradiate a substrate with an ion beam drawn from the ion source,
An electron beam is generated and emitted into a plasma generation container of the ion source, and the gas is ionized by the electron beam to generate plasma. The electron beam is two-dimensionally generated in the plasma generation container. One or more electron beam sources that scan with
One or more electron beam power supplies for supplying each electron beam source with an extraction voltage for controlling the generation amount of the electron beam and a scanning voltage for two-dimensional scanning;
An ion beam monitor having a plurality of two-dimensionally distributed monitor points and measuring a two-dimensional ion beam current distribution of the ion beam at a position corresponding to the position of the substrate; and measurement from the ion beam monitor By controlling the electron beam power source based on the data, the ion beam monitor was measured while keeping the scanning speed and scanning trajectory in two dimensions of the electron beam generated from each electron beam source substantially constant. Reducing the generation amount of the electron beam at a position in the ion source corresponding to a monitor point having a relatively large ion beam current, and in the ion source corresponding to a monitor point having a relatively small measured ion beam current Performing at least one of relatively increasing the generation amount of the electron beam at a position, An ion beam irradiation apparatus comprising: a control device having a function of homogenizing a two-dimensional ion beam current distribution measured by a monitor. (A) The control device
A function of supplying an extraction signal, which is a source of the extraction voltage supplied from the power source for each electron beam to the electron beam source, to the power source for each electron beam;
A function of calculating an average value of an ion beam current of a two-dimensional distribution measured by the ion beam monitor;
A function of uniformly controlling a filament current flowing through each filament of the ion source so that the calculated average value is substantially equal to a predetermined set ion beam current;
A function of calculating an error of the two-dimensional distribution, which is a difference between the ion beam current of the two-dimensional distribution measured by the ion beam monitor and the set ion beam current;
A function for determining a monitor point on the ion beam monitor in which the calculated error is larger than a predetermined allowable error and a sign of the error at the monitor point;
A function of determining the electron beam source corresponding to the determined monitor point and its scanning voltage;
Based on the sign of the determined error, the extracted voltage at the time of the scanning voltage corresponding to a larger monitoring point of the measured ion beam current is decreased in proportion to the magnitude of the error, and the measurement The extracted voltage at the scanning voltage corresponding to a smaller monitoring point of the ion beam current is increased in proportion to the magnitude of the error, so that the ion beam current is substantially the same at all the monitoring points on the ion beam monitor. A function of shaping the waveform of the extraction signal so that an error is less than or equal to the allowable error;
It has a function of storing the data of the drawn signal after the shaping and the data of the filament current,
(B) The ion beam irradiation apparatus according to claim 3, wherein each of the electron beam power supplies includes an amplifier that amplifies an extraction signal supplied from the control device to generate the extraction voltage.   The filaments of the ion source extend linearly in the y direction and are arranged side by side in the x direction substantially perpendicular to the y direction. The ion beam irradiation apparatus according to claim 1, wherein the ion beam irradiation apparatus is arranged.

Images