JP4921120B2 - Solid-state imaging device - Google Patents

Solid-state imaging device Download PDF

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JP4921120B2
JP4921120B2 JP2006303931A JP2006303931A JP4921120B2 JP 4921120 B2 JP4921120 B2 JP 4921120B2 JP 2006303931 A JP2006303931 A JP 2006303931A JP 2006303931 A JP2006303931 A JP 2006303931A JP 4921120 B2 JP4921120 B2 JP 4921120B2
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哲男 吉田
文雄 浮ヶ谷
純 並木
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Hitachi Kokusai Electric Inc
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Description

本発明は固体撮像装置に係り、特に、爆発現象や燃焼現象など、状態が高速度で変化する2次元画像を撮像するのに好適な固体撮像装置に関する。   The present invention relates to a solid-state imaging device, and more particularly to a solid-state imaging device suitable for capturing a two-dimensional image whose state changes at high speed, such as an explosion phenomenon or a combustion phenomenon.

爆発、破壊、燃焼などの高速現象の2次元画像を撮像する装置として、1画面の撮影時間が1μ秒(100万枚/1秒)という高速度の撮像素子を備えた高速撮影装置(高速ビデオカメラ)が、科学的計測等に用いられる。このような高速現象を撮影する撮像装置が、特許文献1に提案されている。   As a device that captures two-dimensional images of high-speed phenomena such as explosion, destruction, and combustion, a high-speed imaging device (high-speed video) equipped with a high-speed imaging device with a recording time of 1 microsecond (1 million images per second). Camera) is used for scientific measurement and the like. An imaging apparatus that captures such a high-speed phenomenon is proposed in Patent Document 1.

この撮像装置では、例えば、8万画素の斜行直線CCD型画素周辺記録撮像素子(以下、ISISと略す。)が、2次元配列ラインに沿って縦横マトリックス状に配設されている。各画素は、検出対象の入射光の光強度に応じた電気信号を発生する1個のフォトダイオードに、電子シャッタ毎に取り出す1個の信号取出ゲートが接続される。この信号取出ゲートの後に、電子シャッタ毎に信号取出ゲートによってフォトダイオードから出力される電気信号を、画像情報として転送するCCDセルを有するCCDデバイスが付設されている。   In this imaging apparatus, for example, 80,000 pixels of oblique linear CCD type pixel peripheral recording imaging elements (hereinafter, abbreviated as ISIS) are arranged in a matrix form along a two-dimensional array line. In each pixel, one signal extraction gate that is extracted for each electronic shutter is connected to one photodiode that generates an electric signal corresponding to the light intensity of incident light to be detected. After this signal extraction gate, a CCD device having a CCD cell for transferring, as image information, an electric signal output from the photodiode by the signal extraction gate for each electronic shutter is attached.

光学レンズを介して被写体の光学像が取り込まれて画素に投影されると、各画素では、1画面の画像情報を得るための電子シャッタ毎にフォトダイオードから出力される電気信号が、電荷のかたちで、信号取出ゲートから取り出され、CCDデバイスへ次々と送り出される。電荷が水平に転送されると、CCDセルの各電荷が、一斉に一段下のCCDセルへ垂直に転送される。そして、再び水平に転送されると、各CCDセルの電荷が一斉に一段下のCCDセルへそれぞれ垂直に転送される転送動作が繰り返される。電子シャッタが連続で繰り返される間に、各フォトダイオードからの電荷が、全てのCCDセルに蓄積された状態となる。これにより、フォトダイオードに付設されたCCDデバイスには、1画面分の画像信号が高速で記憶されることになる。なお、斜行直線CCD型画素周辺記録撮像素子(ISIS)では、CCDデバイスが斜めに付設され、記録部(メモリー部)となっている。   When an optical image of a subject is captured via an optical lens and projected onto a pixel, an electrical signal output from a photodiode for each electronic shutter for obtaining image information of one screen is converted into a charge in each pixel. Then, the signal is taken out from the signal take-out gate and sent to the CCD device one after another. When the charges are transferred horizontally, the charges in the CCD cells are simultaneously transferred vertically to the CCD cells one stage below. Then, when it is transferred again horizontally, the transfer operation in which the charges of the CCD cells are all transferred to the CCD cells one stage below at a time is repeated. While the electronic shutter is continuously repeated, the charge from each photodiode is accumulated in all the CCD cells. As a result, the image signal for one screen is stored at a high speed in the CCD device attached to the photodiode. In the oblique linear CCD type pixel peripheral recording image sensor (ISIS), a CCD device is attached obliquely to form a recording unit (memory unit).

上記のように動作して、電子シャッタ毎に電荷の並列転送が行われ、CCDデバイスに画像情報用の電荷が高速で蓄積される。高速撮影の場合、電荷を蓄積しながら読み出すことは難しいので、電子シャッタを停止してからCCDデバイスに蓄積された電荷を、読み出し電極から読み出す。読み出した電荷は、高速撮像素子の後段でデジタル化した後、さらに同一電子シャッタで得られた電気信号を1枚の画面に編集して2次元画像を作成表示する。   By operating as described above, charges are transferred in parallel for each electronic shutter, and charges for image information are accumulated in the CCD device at high speed. In the case of high-speed imaging, it is difficult to read out while accumulating charges. Therefore, after the electronic shutter is stopped, the charges accumulated in the CCD device are read out from the readout electrode. The read charges are digitized at a subsequent stage of the high-speed image sensor, and then an electric signal obtained by the same electronic shutter is edited into one screen to create and display a two-dimensional image.

特開2005−45608号公報JP-A-2005-45608

上記した従来の高速撮像素子の撮影速度は、電子シャッタ(電子露光)の速度とCCDデバイス内の電荷の並列転送速度とに比例する。しかし、CCDデバイス内の電荷の並列転送速度を速くすると、CCDデバイスが発熱し、雑音が増加するという問題がある。   The photographing speed of the conventional high-speed image sensor described above is proportional to the speed of the electronic shutter (electronic exposure) and the parallel transfer speed of charges in the CCD device. However, if the parallel transfer rate of charges in the CCD device is increased, the CCD device generates heat and noise increases.

そこで本発明の目的は、高速撮影したCCDデバイス内の電荷を、記憶部に高速転送する際の、発熱による雑音発生を低減した固体撮像装置を提供することを目的とする。   Accordingly, an object of the present invention is to provide a solid-state imaging device in which noise generation due to heat generation is reduced when charges in a CCD device taken at high speed are transferred to a storage unit at high speed.

上記課題を解決するため、本発明に係る固体撮像装置は、被写体の光学像を取り込む光学系と、前記光学像を光−電気変換して2次元画像情報を生成する撮像素子部と記録部とを有するCCD固体撮像素子と、前記撮像素子部の温度を検出する温度検出部と、前記撮像素子部を冷却する電子冷却部と制御部とを備える固体撮像装置において、
前記温度検出部からの検出温度が所定の動作範囲内の温度である場合、前記制御部は、高速度撮影準備をするためのトリガー・スタンバイ信号により、前記電子冷却部の冷却を開始して前記撮像素子部を冷却する制御を行い、かつ前記電子冷却部への冷却供給電流が所定値を超えるか、又は、検出温度が所定値を超える場合には、前記撮像素子を低速モードにする制御を行うことを特徴とするものである。
In order to solve the above-described problems, a solid-state imaging device according to the present invention includes an optical system that captures an optical image of a subject, an imaging element unit that generates a two-dimensional image information by photoelectrically converting the optical image, and a recording unit. In a solid-state imaging device comprising: a CCD solid-state imaging device, a temperature detection unit that detects the temperature of the imaging device unit, an electronic cooling unit that cools the imaging device unit, and a control unit.
When the detected temperature from the temperature detection unit is a temperature within a predetermined operating range, the control unit starts cooling the electronic cooling unit in response to a trigger standby signal for preparing for high-speed shooting. Control to cool the image sensor unit, and if the cooling supply current to the electronic cooling unit exceeds a predetermined value or the detected temperature exceeds a predetermined value, control to set the image sensor to a low speed mode It is characterized by doing.

本発明によれば、撮像素子部を常時電子冷却するのではなく、トリガー・スタンバイ信号により撮像素子部の電子冷却を開始し、高速撮影により得られた電荷の記録部への高速転送時のみに撮像素子部を電子冷却するようにしたことにより、電子冷却の放熱の回り込みによる電子冷却の劣化が、高速撮像の信号電荷転送後となるので、電子冷却の実効効率が向上し、発熱による雑音の映像信号への混入を低減することができる。   According to the present invention, instead of constantly cooling the image pickup device electronically, the image pickup device portion starts to be electronically cooled by a trigger standby signal, and only at the time of high-speed transfer of charges obtained by high-speed shooting to the recording portion. Since the image sensor unit is electronically cooled, deterioration of the electronic cooling due to the heat radiation of the electronic cooling becomes after the signal charge transfer of the high-speed imaging, so that the effective efficiency of the electronic cooling is improved and noise due to the heat generation is reduced. Mixing in video signals can be reduced.

以下、本発明の固体撮像装置の一実施形態について、添付図面を参照しながら詳細に説明する。図1は、1秒間に100万コマ(すなわち、1画面の撮影時間が1μ秒)というような高速度で被写体を撮影し、例えば、爆発、燃焼、弾丸などの高速現象についての2次元画像を撮像可能な、本実施形態の固体撮像装置の構成を示すブロック図である。   Hereinafter, an embodiment of a solid-state imaging device of the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 shows an image of a subject at a high speed of 1 million frames per second (that is, 1 μsec. For one screen). It is a block diagram which shows the structure of the solid-state imaging device of this embodiment which can image.

図1に示すように、高速度撮影ができる固体撮像装置は、被写体の光学像を取り込む光レンズやプリズムなどの光学系1と、取り込まれた光学像を光−電気変換して2次元画像情報を作り出す撮像素子部2と、撮像素子部2の出力信号からベースバンド信号を取り出すための相関2重サンプリング(CDS: Correlated Double Sampling)と増幅度可変(AGC: Automatic Gain Control)とアナログ/デジタル変換(ADC)とを行うフロントエンドプロセッサ(FEP: Front End Processor)7と、相関2重サンプリングした信号をデジタル変換し、画像処理、記録、及び出力処理ほかを行う画像処理部8と、撮像素子部2を指定された速度で駆動する駆動部3と、撮像素子部2を高速駆動した場合の発熱温度を測定する温度検出部4と、撮像素子部2をペルチエ冷却などで冷却する電子冷却部5と、制御部6とから構成される。   As shown in FIG. 1, a solid-state imaging device capable of high-speed shooting includes an optical system 1 such as an optical lens or a prism that captures an optical image of a subject, and two-dimensional image information by photoelectrically converting the captured optical image. Image sensor 2 for generating image, correlated double sampling (CDS: Correlated Double Sampling) for extracting baseband signal from output signal of image sensor 2, variable gain (AGC: Automatic Gain Control), and analog / digital conversion A front end processor (FEP) 7 that performs (ADC), an image processing unit 8 that performs digital conversion of a correlated double sampled signal, performs image processing, recording, output processing, and the like, and an image sensor unit 2 at a specified speed, a temperature detection unit 4 for measuring the heat generation temperature when the image sensor unit 2 is driven at a high speed, and the image sensor unit 2 are connected to a Peltier device. An electronic cooling unit 5 that cools by cooling or the like and a control unit 6 are configured.

制御部6は、図4に示す安定動作の関係、図5に示す設定された撮像速度Sと温度上昇Tの関係に基づいて撮像素子部2を低速モードへ変更する速度制御と、図6に示す温度検出部4で検出した温度に基づいて電子冷却部5に供給する冷却電流Iを制御して撮像素子部2を低速モードへ変更する速度制御を行う機能とを有する。また、制御部6には、所定の高速撮像をするためのトリガー信号が入力されると、駆動部3に所定の駆動情報を出力する機能も備えている。   The control unit 6 performs speed control for changing the imaging device unit 2 to the low speed mode based on the relationship between the stable operation illustrated in FIG. 4 and the relationship between the set imaging speed S and the temperature rise T illustrated in FIG. And a function of controlling the cooling current I supplied to the electronic cooling unit 5 based on the temperature detected by the temperature detecting unit 4 to perform speed control for changing the imaging device unit 2 to the low speed mode. The control unit 6 also has a function of outputting predetermined drive information to the drive unit 3 when a trigger signal for performing predetermined high-speed imaging is input.

高速撮像では、メモリーの数が限られているため、所定の高速映像を捉えるのにトリガータイミングが極めて重要である。一般に、トリガーのタイミングを正確に捉えることが困難なため、トリガーが有ってから、撮像素子部2を高速動作させたのでは、所定の瞬間に間に合わず目的の撮影ができない。   In high-speed imaging, since the number of memories is limited, trigger timing is extremely important for capturing a predetermined high-speed video. In general, since it is difficult to accurately capture the trigger timing, if the image sensor unit 2 is operated at a high speed after the trigger is present, the target photographing cannot be performed in time for a predetermined moment.

そこで、トリガー信号が入る前から撮像素子部2を高速動作状態にしておく必要があるが、高速動作状態では発熱が高いので、図4に示すように安定動作時間tに制約がある。   Therefore, it is necessary to set the image sensor section 2 to the high speed operation state before the trigger signal is input. However, since the heat generation is high in the high speed operation state, the stable operation time t is limited as shown in FIG.

図4は、動作速度と撮像素子部2が温度上昇し、最大温度Tmaxに至るまでの安定動作領域を示した模式図である。図4の模式図において、横軸Sは撮像速度(コマ数/sec)であり、縦軸は動作時間tを示している。撮像素子部2の安定動作する動作領域は、速度Sと、動作可能最高時間tmaxとの積が一定の式、すなわち、S×tmax=Kで、表される。また、動作可能最高時間tmaxは、tmax=K/Sで表される。ここで、Kは一定値、pは定数を示す。 FIG. 4 is a schematic diagram showing the operation speed and a stable operation region from when the temperature of the image sensor unit 2 rises to the maximum temperature Tmax. In the schematic diagram of FIG. 4, the horizontal axis S represents the imaging speed (frame number / sec), and the vertical axis represents the operation time t. Operation area for stable operation of the image pickup device unit 2, and the speed S p, maximum allowable operating time tmax and the product is constant expressions, i.e., in S p × tmax = K, expressed. Moreover, maximum allowable operating time tmax is represented by tmax = K / S p. Here, K is a constant value and p is a constant.

図2は、撮像素子部2の構造を示し、大きくはm×n画素の受光素子部13と、受光素子部13からの映像信号を蓄えるm×n×1個のメモリー部14とで構成されている。   FIG. 2 shows the structure of the image sensor unit 2, which is mainly composed of a light receiving element unit 13 of m × n pixels and m × n × 1 memory unit 14 for storing video signals from the light receiving element unit 13. ing.

図3は、図2に示した撮像素子部2の受光素子部13内の1受光素子からのデータを蓄えるメモリー部14の動作を説明するための撮像素子部の模式図である。図1において、制御部6にトリガー・スタンバイ信号が入力されると、速度指定信号で指定された撮像速度を制御部6から駆動部3に与え、駆動部3は撮像素子部2の駆動を開始し、高速度撮影動作準備状態(トリガー・スタンバイ状態)に入る。   FIG. 3 is a schematic diagram of the image sensor section for explaining the operation of the memory section 14 for storing data from one light receiving element in the light receiving element section 13 of the image sensor section 2 shown in FIG. In FIG. 1, when a trigger standby signal is input to the control unit 6, the imaging speed designated by the speed designation signal is given from the control unit 6 to the drive unit 3, and the drive unit 3 starts driving the imaging element unit 2. Then, the high-speed shooting operation ready state (trigger / standby state) is entered.

トリガー・スタンバイ状態では、図3のメモリー部14には、受光素子1画素からのデータが高速度画像で入力され、メモリー部14も高速度画像を連動記録する。メモリー数lを超えた分は、外部に排出される。   In the trigger standby state, data from one pixel of the light receiving element is input as a high-speed image to the memory unit 14 in FIG. 3, and the memory unit 14 also records the high-speed image in conjunction. The portion exceeding the memory number l is discharged to the outside.

次に、時刻t0にトリガー信号が入力されると、メモリー部14には時刻t0より前に入力された時刻t0−i〜t0までのトリガー前のデータと、時刻t0以後t0〜t0+jまでのトリガー後のデータが振り分け記録される。   Next, when a trigger signal is input at time t0, the data before the trigger from time t0-i to t0 input before time t0 and the trigger from time t0 to t0 to t0 + j are input to the memory unit 14. Later data is distributed and recorded.

トリガー前のデータと、トリガー後のデータの画像数は、予め設定されたスキップバック信号で決められる。スキップバック信号は、図1の制御部6に入力されて駆動部3を経て撮像素子部2に与えられる。スキップバック値は、目的に応じて設定できる。   The data before the trigger and the number of images of the data after the trigger are determined by a preset skipback signal. The skip back signal is input to the control unit 6 in FIG. 1 and is given to the image sensor unit 2 through the drive unit 3. The skip back value can be set according to the purpose.

次に、この高速度撮像状態では、速度が速くなればなるほど、撮像素子部2の消費電力が大きくなり、温度上昇する。撮像素子部2の温度は、温度検出部4により常時検出される。検出値は制御部6に入力されて、制御部6は撮像素子部2の温度上昇を抑制するために、電子冷却部5を制御して電子冷却部5の冷却電流の供給を増加させる。   Next, in this high-speed imaging state, the higher the speed, the greater the power consumption of the imaging device unit 2 and the temperature rises. The temperature of the image sensor 2 is always detected by the temperature detector 4. The detected value is input to the control unit 6, and the control unit 6 controls the electronic cooling unit 5 to increase the supply of the cooling current of the electronic cooling unit 5 in order to suppress the temperature rise of the imaging element unit 2.

ここで、電子冷却部5により常時冷却すると、電子冷却部からの放熱の回り込みにより、電子冷却の効率が低下し、発熱による雑音の映像信号への混入が増加する影響がでるので、制御部6は、撮像素子部2の電子冷却を、固体撮像素子内のメモリー部14に電荷を高速転送する期間のみ電子冷却を行うように制御することで、電子冷却の放熱の回り込みによる電子冷却の劣化を、高速撮像の信号電荷をメモリー部14へ転送した後にずらせるので、電子冷却の実行効率を向上でき、発熱による雑音の映像信号への混入を低減することができる。   Here, if the electronic cooling unit 5 constantly cools, the efficiency of electronic cooling is reduced due to the heat radiation from the electronic cooling unit, and the influence of noise on the video signal due to heat generation increases. Controls the electronic cooling of the image sensor unit 2 so that the electronic cooling is performed only during the period in which the charge is transferred to the memory unit 14 in the solid-state image sensor at high speed. Since the signal charges for high-speed imaging are shifted after being transferred to the memory unit 14, the efficiency of performing electronic cooling can be improved, and mixing of noise due to heat generation into the video signal can be reduced.

しかし、撮像素子部2の温度上昇が、電子冷却による温度上昇の抑制を超えて、図5のように、撮像素子部2の許容最大温度Tmaxに至るか、近づいた場合、或いは図6のように、冷却電流Iが最高冷却電流Imaxに至るか近づいた場合には、制御部6は、駆動部3に高速度撮影状態を解除する信号を送り、直ちに撮像素子部2を低速度モードへ切り替える制御を行う。   However, when the temperature rise of the image sensor unit 2 exceeds the suppression of the temperature rise due to electronic cooling and reaches or approaches the allowable maximum temperature Tmax of the image sensor unit 2 as shown in FIG. 5, or as shown in FIG. When the cooling current I reaches or approaches the maximum cooling current Imax, the control unit 6 sends a signal for canceling the high-speed shooting state to the driving unit 3 and immediately switches the imaging element unit 2 to the low-speed mode. Take control.

以上、好適な実施形態について説明したが、本発明の精神を逸脱しない範囲内において、種々の変更を成し得ることは勿論である。例えば、実施形態では、高速撮影の固体撮像素子内の記録部への高速転送している期間のみに電子冷却を行うとして説明したが、さらに、前記高速転送期間にのみ電子冷却し、所定の温度以上の間は、高速撮影の固体撮像素子内の記録部への高速転送を中止するように制御してもよい。   The preferred embodiments have been described above, but it goes without saying that various modifications can be made without departing from the spirit of the present invention. For example, in the embodiment, it has been described that the electronic cooling is performed only during the high-speed transfer period to the recording unit in the solid-state imaging device for high-speed shooting, but the electronic cooling is performed only during the high-speed transfer period, and the predetermined temperature is set. During the above, control may be performed so as to stop high-speed transfer to the recording unit in the solid-state imaging device for high-speed shooting.

本発明の固体撮像装置の構成を示すブロック図。1 is a block diagram illustrating a configuration of a solid-state imaging device of the present invention. 本発明の固体撮像装置の撮像素子部の構成を示すブロック図。The block diagram which shows the structure of the image pick-up element part of the solid-state imaging device of this invention. 本発明の固体撮像装置の撮像素子部1画素当りのメモリー動作の模式図。The schematic diagram of the memory operation | movement per pixel of the image pick-up element part of the solid-state imaging device of this invention. 本発明の固体撮像装置の動作速度と動作時間の関係を示す模式図。The schematic diagram which shows the relationship between the operating speed and operating time of the solid-state imaging device of this invention. 本発明の固体撮像装置の動作速度と温度上昇の関係を示す模式図。The schematic diagram which shows the relationship between the operating speed of the solid-state imaging device of this invention, and temperature rise. 本発明の固体撮像装置の動作速度と冷却電流の関係を示す模式図。The schematic diagram which shows the relationship between the operating speed of the solid-state imaging device of this invention, and a cooling current.

符号の説明Explanation of symbols

1…光学系、2…撮像素子、3…駆動部、4…温度検出部、5…電子冷却部、6…制御部、7…FEP(フロントエンドプロセッサ)、8…画像処理部(画像処理+記録+出力)、13…受光素子部、14…記録部(メモリー部)   DESCRIPTION OF SYMBOLS 1 ... Optical system, 2 ... Image pick-up element, 3 ... Drive part, 4 ... Temperature detection part, 5 ... Electronic cooling part, 6 ... Control part, 7 ... FEP (front end processor), 8 ... Image processing part (Image processing + (Recording + output), 13... Light receiving element portion, 14... Recording portion (memory portion)

Claims (1)

被写体の光学像を取り込む光学系と、
前記光学像を光−電気変換して2次元画像情報を生成する撮像素子部と記録部とを有するCCD固体撮像素子と、
前記撮像素子部の温度を検出する温度検出部と、
前記撮像素子部を冷却する電子冷却部と制御部とを備える固体撮像装置において、
前記温度検出部からの検出温度が所定の動作範囲内の温度である場合、前記制御部は、高速度撮影準備をするためのトリガー・スタンバイ信号により、前記電子冷却部の冷却を開始して前記撮像素子部を冷却する制御を行い、かつ前記電子冷却部への冷却供給電流が所定値を超えるか、又は、検出温度が所定値を超える場合には、前記撮像素子を低速モードにする制御を行うことを特徴とする固体撮像装置。
An optical system for capturing an optical image of a subject;
A CCD solid-state imaging device having an imaging device section and a recording section for generating two-dimensional image information by photoelectrically converting the optical image;
A temperature detection unit for detecting the temperature of the image sensor unit;
In a solid-state imaging device comprising an electronic cooling unit and a control unit for cooling the imaging element unit,
When the detected temperature from the temperature detection unit is a temperature within a predetermined operating range, the control unit starts cooling the electronic cooling unit in response to a trigger standby signal for preparing for high-speed shooting. Control to cool the image sensor unit, and if the cooling supply current to the electronic cooling unit exceeds a predetermined value or the detected temperature exceeds a predetermined value, control to set the image sensor to a low speed mode A solid-state imaging device.
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