JP4883601B2 - Plasma processing equipment - Google Patents

Description

  The present invention relates to a plasma surface processing method, a plasma processing apparatus and a plasma processing apparatus using the plasma generated by performing a vacuum arc discharge in an arc discharge section set in a vacuum atmosphere as a processing plasma. It relates to an object to be processed.

  In general, it is known that the surface characteristics of a solid can be improved by forming a thin film on the surface of a solid material or implanting ions in a plasma. Films formed using plasma containing metal ions and non-metal ions enhance the wear and corrosion resistance of solid surfaces and are useful as protective films, optical thin films, transparent conductive films, slidable films, etc. Is. In particular, as disclosed in Japanese Patent Laid-Open No. 2001-182527 (Patent Document 1), a diamond-like carbon (DLC) thin film synthesized by a shunting arc or the like is used as a highly slidable film. High value. Among DLC films, tetrahedral amorphous carbon (ta-C), which contains almost no hydrogen in the film, has a high density and has a feature of low fusion with a solid partner material in contact with the DLC film. It is extremely useful as a protective film for hard disks and a protective film for cutting tools.

  As a method for generating plasma containing metal ions and non-metal solid ions (mainly carbon C), there is a vacuum arc (or also called a cathodic arc) discharge method. The vacuum arc discharge method includes a cathodic arc discharge method for evaporating the cathode material and an anodic arc discharge method for evaporating the anode material. However, it is generally difficult to evaporate the anode material and is described in this specification. Unless otherwise specified, the vacuum arc discharge method is a cathode arc discharge method. Similarly, the term “vacuum arc” indicates a cathode arc unless otherwise specified. The vacuum arc plasma is a plasma generated between a cathode and an anode in an arc discharge, and is a plasma formed by evaporating a cathode material from a cathode spot existing on the cathode surface and forming the cathode evaporation material. In general, the anode is inert and does not evaporate. In addition, when a reactive gas and / or an inert gas (for example, a rare gas) is introduced as the atmospheric gas, the reactive gas or / and the inert gas are also ionized at the same time. Using such plasma, surface treatment can be performed by forming a thin film on a solid surface or implanting ions.

DLC films are generally classified into four types: ta-C, a-C, and hydrogen-containing DLC, ta-C: H and aC: H. ta-C contains many sp ³ structures of carbon bonds, and a-C (amorphous carbon) contains many sp ² structures. Further, those containing hydrogen are ta-C: H and aC: H. ta-C is the hardest DLC. The DLC film becomes softer as it contains more hydrogen.

  For example, the DLC film is useful as a wear-resistant and highly slidable film in coating on cutting tools. Film formation methods other than vacuum arc, such as ionization vapor deposition, sputtering, CVD, and hollow cathode arc vapor deposition, often contain hydrogen and cannot produce a ta-C film. Of course, a-C or aC: H containing hydrogen can also be used as a wear-resistant and slidable film. However, for example, in the case of cutting Al or Al alloy products, the cutting scraps of the product and the hydrogen-containing DLC film are fused, and the function as a protective film cannot be achieved. On the other hand, only ta-C does not cause fusion with Al-based cutting waste.

  By the way, ta-C has a characteristic that the internal stress is extremely high instead of being very hard. For this reason, it is known that the adhesion to the substrate to be formed is poor. As a means for relieving this high internal stress and ensuring high adhesion to the base material, a thin film such as Cr, W, or Si is used as a buffer film (buffer film or buffer) between the base material and the DLC film. There is a method of sandwiching as a layer).

  On the other hand, the vacuum arc film forming apparatus has a problem inherent in surface treatment due to cathode material particles (hereinafter referred to as “droplets”) by-produced from the cathode when plasma is generated. In general, in vacuum arc discharge, vacuum arc plasma constituent particles such as cathode material ions, electrons, and cathode material neutral particles (atoms and molecules) are emitted from the cathode spot, and at the same time, sub-micron to several hundred microns (0.01). Droplets with a size of ˜1000 μm are also emitted. However, the problem in the surface treatment is the generation of the droplets. If the droplets adhere to the substrate surface, the uniformity of the thin film formed on the substrate surface is lost, resulting in a defective product of the thin film. . For this reason, a method must be developed in which the droplets do not adhere to the substrate.

One method for solving the droplet problem is a magnetic filter method described in PJ Martin, RPNetterfield and TJKinder, Thin Solid Films 193/194 (1990) 77 (Non-patent Document 1). In this magnetic filter method, vacuum arc plasma is transported to a processing section through a curved droplet collecting duct. According to this method, the generated droplets are attached and captured (collected) on the inner wall of the duct, and a plasma flow containing almost no droplets is obtained at the duct outlet. Further, a curved magnetic field is formed by a magnet arranged along the duct, and the plasma flow is bent by the curved magnetic field, so that the plasma is efficiently moved to the plasma processing portion.
JP 2001-182527 A PJMartin, RPNetterfield and TJKinder, Thin Solid Films 193/194 (1990) 77

  When the buffer film is formed and a DLC film having high adhesion, particularly a ta-C film, is formed on a work such as a cutting jig, a vacuum arc film forming apparatus and a buffer film are formed on the wall of a vacuum film forming chamber. It is necessary to install a vapor deposition apparatus for film formation. However, if these devices are individually attached to the deposition chamber, the space necessary for the deposition apparatus, such as the space for loading and unloading the workpiece and the space for the exhaust port, will be reduced, and the space will be properly allocated. There was a problem that it was difficult to install. Particularly, when each film forming apparatus is individually arranged, there is a problem that it is difficult to match the film forming direction of the buffer film and the film forming direction of the DLC with respect to the work fixed in the film forming chamber. .

  Further, the magnetic filter method has the following problems. Since the droplets are deposited on the curved inner wall of the duct, it is necessary to remove them regularly. However, since the duct is usually thin, the operation is not easy. Further, when the droplet is deposited to a thickness of about 0.5 mm, the deposit may be peeled off from the inner wall and mixed into the plasma as an impurity. Furthermore, when a high-melting point material such as graphite is used for the cathode, the droplet does not completely liquefy, and the droplet elastically collides with the inner wall of the curved duct, and is repeatedly reflected and released from the duct outlet to be processed. The problem which adheres to the surface of an object arises.

  The present invention has been made in view of the above problems, and can form a multilayer film or a mixed film made of a plurality of substances with high purity and smoothly without being affected by droplets. An object is to provide a surface treatment method and a plasma treatment apparatus. In addition, for example, a vacuum arc film forming apparatus for a metal film, a semiconductor film, or an insulator film that imparts desired surface characteristics to an object to be processed and a film forming apparatus for a buffer film, for example, with respect to a film forming chamber. It is an object of the present invention to provide a plasma surface treatment method and a plasma treatment apparatus that are compactly arranged and can smoothly form a high-purity multilayer film. Further, for example, a metal film, a semiconductor film, an insulator film, an amorphous film or the like and a buffer film laminated structure, or a compound semiconductor film or alloy formed from a plurality of substances, which has been surface-treated using the plasma processing apparatus. An object is to provide an object to be processed having a film or a ceramic film.

  The present invention has been made to solve the above-described problems. The first aspect of the present invention is to generate a first plasma by performing a vacuum arc discharge in an arc discharge section set in a vacuum atmosphere. The cathode material particles (hereinafter referred to as droplets) generated from the cathode of the arc discharge part contained in the first plasma are separated, and the second plasma is obtained using solid / liquid as a plasma source or gas as a plasma working gas. The first plasma and the second plasma separated from the droplets are electromagnetically induced to a plasma processing unit via introduction into a common transport duct, and the first plasma and the second plasma are The timing of introduction into the common transport duct is controlled, and the object to be processed in the plasma processing unit is surface-treated by the first plasma and the second plasma. A plasma surface treatment method.

  According to a second aspect of the present invention, there is provided a first plasma generating means for generating a first plasma by performing a vacuum arc discharge in an arc discharge section set in a vacuum atmosphere, and the arc discharge contained in the first plasma. A droplet separating means for separating the droplet generated from the cathode of the first plasma from the first plasma; a second plasma generating means for generating a second plasma using a solid / liquid as a plasma source or a gas as a plasma working gas; and the drop A common transport duct for electromagnetically introducing the first plasma and the second plasma from which the droplets have been separated by a let separation means; and the first plasma electromagnetically induced via the common transport duct; A plasma processing unit for surface-treating an object to be processed by the second plasma; and the first plasma and the second plasma. Zuma is a plasma processing apparatus and a control means for controlling the timing of introducing the common transport duct.

  According to a third aspect of the present invention, in the second aspect, the control means introduces the first plasma and the second plasma into which the droplets are separated into the common transport duct simultaneously or temporally. The plasma processing apparatus is controlled separately or partially at the same time.

  According to a fourth aspect of the present invention, in the second or third aspect, the first plasma is separated from the first plasma by a transport path for transporting the first plasma non-linearly to the common transport duct, and the droplet separating means. A droplet collection unit that collects the separated droplets, wherein the collection port of the droplet collection unit is disposed in a direction facing the plasma generation unit of the first plasma generation unit, and The plasma processing apparatus has a cross-sectional area of the collection port equal to or larger than a transport cross-sectional area of the transport path.

  5th form of this invention is a said 2nd, 3rd or 4th form, The cross section of the said droplet collection part and the said collection opening is a track shape, It is described in Claim 2, 3 or 4 A plasma processing apparatus.

  According to a sixth aspect of the present invention, in any one of the second to fifth aspects, a reflecting plate that reflects the droplet is disposed at a terminal portion of the droplet collecting unit, and the drop by the reflecting plate is performed. It is a plasma processing apparatus provided with a droplet capturing unit that captures droplets in the reflection direction of the droplets.

  According to a seventh aspect of the present invention, in the fourth, fifth, or sixth aspect, the droplet separation means includes a magnetic field generation unit provided in the transport path, and a magnetic field generated by the magnetic field generation unit. The plasma processing apparatus transports the first plasma from which droplets are separated by a transport path to the common transport duct.

  According to an eighth aspect of the present invention, in the seventh aspect, an angle formed between the first plasma transport path from the plasma generation part of the first plasma to the common transport duct and the common transport duct is approximately 90 °. It is a plasma processing apparatus.

  A ninth aspect of the present invention is the plasma processing apparatus according to any one of the second to eighth aspects, wherein the second plasma is generated by a plasma generation method for obtaining plasma directly from a solid.

  A tenth aspect of the present invention is the plasma processing apparatus according to any one of the second to eighth aspects, wherein the second plasma is generated by a plasma generation method for obtaining plasma by evaporating a solid.

  An eleventh aspect of the present invention is the plasma processing apparatus according to any one of the second to eighth aspects, wherein the second plasma is generated by a plasma generation method for obtaining plasma by gas or vaporized or misted liquid. is there.

  A twelfth aspect of the present invention is the plasma generation means according to any one of the second to eighth aspects, wherein the second plasma generation means generates vacuum arc plasma using a cathode as a plasma source material, It is a plasma processing apparatus provided with a plasma generating part of the second plasma and a second plasma transport path from the generating part to the common transport duct at a position not facing the plasma processing part.

  A thirteenth aspect of the present invention is the plasma processing apparatus according to the twelfth aspect, wherein the second plasma transport path is substantially crank-shaped.

  A fourteenth aspect of the present invention is the plasma processing apparatus according to the twelfth or thirteenth aspect, wherein a part of the droplet collecting part also serves as a part of the second plasma transport path.

  A fifteenth aspect of the present invention is the plasma processing apparatus according to the thirteenth, fourteenth or fifteenth aspect, wherein an opening / closing means is provided at a connection portion between the second plasma generating means and the second plasma transport path. is there.

  According to a sixteenth aspect of the present invention, in the fifteenth aspect, the opening / closing means has a shape that reflects the droplet at an angle that does not re-enter the common transport duct, and the drop is provided below the opening / closing means. It is the plasma processing apparatus which provided the storage part which stores a let.

  According to a seventeenth aspect of the present invention, in any one of the second to sixteenth aspects, the first plasma generating means and / or the second plasma generating means and / or the common transport duct may include droplets. It is a plasma processing apparatus provided with baffles and / or orifices for preventing the progress.

  According to an eighteenth aspect of the present invention, in any one of the second to sixteenth aspects, a bias voltage is applied to the first plasma generating means and / or the second plasma generating means and / or the common transport duct. A plasma processing apparatus having bias voltage applying means for applying.

  According to a nineteenth aspect of the present invention, in any one of the second to sixteenth aspects, a bias unit that electrically biases the anode of the first plasma generation unit and / or the anode of the second plasma generation unit. A plasma processing apparatus.

  According to a twentieth aspect of the present invention, in any one of the second to nineteenth aspects, a plasma traveling direction of a final part of the common transport duct is a z-axis direction, and a vertical plane is an xy plane. And a plasma processing apparatus provided with a deflection coil for scanning the plasma in the x direction and / or the y direction.

  In a twenty-first aspect of the present invention, a surface-treated object is processed in the plasma processing unit using the first plasma and the second plasma generated by any one of the second to twentieth plasma processing apparatuses. It is a thing.

  According to the first aspect of the present invention, the first plasma and the second plasma separated from the droplets are guided to the plasma processing unit via a common transport duct, and each of the common transport ducts By controlling the timing of introducing the plasma and subjecting the object to be processed in the plasma processing section to the surface treatment with the first plasma and the second plasma, multilayer film formation can be performed smoothly. In addition, since the first plasma and the second plasma are introduced into the plasma processing section by the common transport duct, the plasma processing apparatus having film forming functions using the first plasma and the second plasma can be made compact. Can be realized. Furthermore, a high-purity DLC film or the like can be formed using the first plasma made of vacuum arc plasma from which droplets are separated.

  According to the plasma processing apparatus of the second aspect of the present invention, the first plasma and the second plasma obtained by separating the droplets from the plurality of plasma generation sources of the first plasma and the second plasma. Since the plasma is introduced into the plasma processing unit via the common transport duct and the introduction timing can be controlled, the space around the plasma processing unit such as a film forming chamber is not limited. The structure of the plasma processing apparatus can be simplified by arranging a plurality of plasma generation sources in a compact manner. In addition, since the first plasma made of vacuum arc plasma from which droplets are separated is introduced via the common transport duct, a high-purity multilayer film can be formed smoothly.

  According to the third aspect of the present invention, the introduction of the first plasma and the second plasma into which the droplets are separated into the common transport duct is performed simultaneously, separately in time, or partially simultaneously. Since it has the control means to control at the timing to perform, the timing of introduction of the first plasma and the second plasma into the common transport duct can be adjusted according to the film forming specifications and conditions, at least vacuum arc plasma The multilayer film including the film can be smoothly formed.

  According to the fourth aspect of the present invention, since the transport path for transporting the first plasma non-linearly to the common transport duct is provided, the first plasma is transported linearly to the common transport duct; In comparison, the droplets generated when the first plasma is generated can be prevented from going straight into the common transport duct, and a high-purity multilayer film can be formed smoothly. In addition, since the collection port of the droplet collection unit is disposed in a direction facing the plasma generation unit of the first plasma generation unit, the droplet traveling straight from the plasma generation unit, It can be reliably attached or deposited on the collection port of the droplet collection unit, the bottom of the collection unit, the side wall, etc., and can be reliably collected to increase the droplet removal efficiency. Accordingly, since the droplets once incident on the droplet collection unit are reliably collected, the purity of the plasma traveling to the plasma processing unit can be kept higher. In particular, in order to recover droplets and / or to prevent contamination of the inner surface due to neutral particles and diffusion ions and to make cleaning work more efficient, the inner surface of the droplet collecting part is made of metal, It is necessary to attach a ceramic, resin, or rubber anti-adhesive cylinder (or anti-adhesion plate or anti-adhesion film). Since the area is equal to or larger than the transport cross-sectional area of the transport path, the operation of collecting, cleaning, and removing droplets and films attached to the periphery of the collection port or the inner surface of the droplet collection unit, The attachment / detachment work can be performed easily and smoothly.

  According to the fifth aspect of the present invention, the droplet collecting part and the collecting port have a track shape (the track shape is an oval shape, that is, the circle is cut in half, and the cut position is 2), the cross section of the droplet collection part can be made larger than the cross section of the first plasma transport path. Compared with the case where the cross-sections of the let collection portions are equal, the droplets generated as a by-product of the first plasma can be collected more efficiently. In addition, the track shape facilitates connection of the first plasma transport path, the common transport path, and the droplet collection part in device design and manufacture. Furthermore, when the cross section of the droplet collecting portion is constant, the above-described attachment and detachment work of the protection cylinder can be smoothly performed from the openable end portion of the droplet collecting portion.

  According to the sixth aspect of the present invention, a drop is provided in which a reflecting plate that reflects the droplet is disposed at the end of the droplet collecting unit, and the droplet is captured in the direction in which the droplet is reflected by the reflecting plate. Since the droplet trapping part is provided, the droplet that has traveled to the terminal end of the droplet trapping part can be reflected by the reflector and captured and collected by the droplet trapping part. The let can be separated and eliminated.

  According to a seventh aspect of the present invention, the droplet separating means includes a magnetic field generation unit provided in the transport path, and the drop is generated according to the magnetic field generated by the magnetic field generation unit and the geometric arrangement / shape of the transport path. Since the first plasma from which the droplets have been separated is transported to the common transport duct, the droplets can be reliably separated and eliminated by guiding only the plasma flow to the common transport duct by the action of the magnetic field.

  According to the eighth aspect of the present invention, the first plasma traveling in the first plasma transport path is bent at a substantially right angle by the magnetic field, and only the plasma flow is guided to the common transport duct. It is possible to more reliably separate the droplets that travel straight without receiving. Therefore, it is possible to reliably prevent the droplets from entering the plasma processing unit, and to perform plasma processing using a high purity plasma flow. Further, the neutral particles generated in the first plasma generation unit also go straight without being affected by the magnetic field and are removed from the bent plasma flow. Therefore, a plasma flow composed of ions and electrons reaches the plasma processing unit, and as a result, film formation is mainly performed only with ions. In general, it is known that the film quality of a film formed using ions is superior to that of a film formed of neutral particles. A film having excellent film quality can be formed.

  According to the ninth aspect of the present invention, since the generation of the second plasma is performed by a plasma generation method for obtaining plasma directly from a solid, for example, a vacuum arc discharge method, a shunting arc method, or various spatters (for example, The second plasma is generated using a method using self-sputtering, unbalanced magnetron sputtering, or V-shaped sputtering, and multilayer film formation according to various film formation specifications can be performed.

  According to the tenth aspect of the present invention, since the generation of the second plasma is performed by a plasma generation method for obtaining plasma by evaporating solids, for example, a hollow cathode arc, electron beam excited plasma, various spatters (for example, High-frequency sputtering, medium frequency sputtering, direct current sputtering, alternating current sputtering, magnetron sputtering), evaporation evaporated by resistance evaporation or electron beam evaporation, hollow cathode, electron beam excited plasma, direct current discharge, low frequency, medium frequency, According to various film forming specifications, the second plasma is generated using a method of generating plasma with high frequency plasma (inductive coupling type or capacitive coupling type), pulse plasma, microwave plasma, surface wave plasma, or electron shower plasma. Multi-layer film formation can be performed.

  According to the eleventh aspect of the present invention, since the generation of the second plasma is performed by a plasma generation method for obtaining plasma by gas or vaporized or misted liquid, direct current discharge, hollow cathode arc, low frequency / medium frequency -The second plasma can be generated using a method utilizing high-frequency plasma, pulse plasma, microwave plasma, surface wave plasma, electron shower plasma, or the like, and multilayer film formation according to various film formation specifications can be performed.

  According to the twelfth aspect of the present invention, in the case where vacuum arc plasma is generated as the second plasma, the plasma generation part of the second plasma and the second plasma transport path from the generation part to the common transport duct are provided. Since it is provided at a position that does not face the plasma processing unit, it is possible to prevent droplets generated by the plasma generation of the plasma generation unit of the second plasma from going straight and entering the common transport duct, Even when vacuum arc plasma is used as the two plasmas, high-purity multilayer film formation can be performed.

  According to a thirteenth aspect of the present invention, in the twelfth aspect, since the second plasma transport path is substantially crank-shaped, the transport path is arranged so that the second plasma transport path does not face the plasma processing unit. This makes it possible to reliably prevent droplets from entering the common transport duct, and to perform high-purity multilayer film formation even when vacuum arc plasma is used as the second plasma.

  According to a fourteenth aspect of the present invention, in the twelfth or thirteenth aspect, a part of the droplet collecting part also serves as a part of the second plasma transport path. The collection of droplets generated with the generation of the second plasma can be collectively performed by the droplet collection unit, and the structure of the apparatus can be simplified.

  According to the fifteenth aspect of the present invention, since the opening / closing means is disposed at the connecting portion between the second plasma generating means and the second plasma transport path, the introduction timing of the second plasma is determined by opening / closing the opening / closing means. Thus, film formation control according to various film formation specifications and conditions such as film thickness and layer configuration can be easily performed.

  According to a sixteenth aspect of the present invention, the opening / closing means has a shape that reflects the droplet at an angle that does not re-enter the common transport duct, and stores the droplet below the opening / closing means. Since the portion is provided, the opening / closing means can have a function of a reflector that reflects the droplet at an angle that does not re-enter the common transport duct. Furthermore, since the droplets reflected by the opening / closing means are stored and collected by the storage unit, the droplets can be prevented from backflowing and staying, and film formation with higher purity plasma can be performed.

  According to the seventeenth aspect of the present invention, a baffle and / or an orifice for preventing the progress of droplets is arranged in the first plasma generating means and / or the second plasma generating means and / or the common transport duct. Since the droplets generated by the generation of the first plasma and / or the second plasma are caused to collide with the baffle and / or the orifice even when traveling around the plasma generation unit or the common transport duct. It can be reliably collected. Therefore, the efficiency of separating and removing droplets is improved, film formation with higher purity plasma can be performed, and high quality of the film can be guaranteed.

  According to an eighteenth aspect of the present invention, the bias voltage applying means preferably causes the first plasma generating means and / or the second plasma generating means and / or the common transport duct to have the same potential as the plasma potential. Alternatively, since a bias voltage having substantially the same potential is applied, the generation of plasma flow to the plasma generation unit side of the first plasma and / or the second plasma is suppressed or eliminated, and the generated plasma is applied to the plasma processing unit. Transport efficiency can be increased and film formation speed can be improved.

  According to the nineteenth aspect of the present invention, there is provided bias means for electrically biasing the anode of the first plasma generation means and / or the anode of the second plasma generation means. The resistance is increased, and the transport efficiency of the generated plasma to the plasma processing unit and the film formation rate can be improved.

  According to the twentieth aspect of the present invention, the plasma traveling direction of the final part of the common transport duct is the z-axis direction, the vertical plane is the xy plane, and the plasma is transmitted to the common transport duct in the x direction and / or the y direction. Since the deflection coil for scanning is disposed, the plasma flow can be uniformly irradiated on the entire surface of the workpiece by scanning the high purity plasma flow in the xy direction with the deflection coil. Can be formed on the workpiece.

  According to a twenty-first aspect of the present invention, the plasma using the high-purity plasma of the first plasma and the second plasma generated by the plasma processing apparatus according to any one of the second to twentieth aspects. It is possible to realize an object to be processed which is surface-treated in the processing section and has a high-performance multilayer film structure such as a laminated film of a DLC film and a buffer film.

Embodiments of a plasma processing apparatus to which a plasma surface processing method according to the present invention is applied will be described below in detail with reference to the accompanying drawings.
FIG. 1 is a sectional view of a plasma processing apparatus according to the present invention. The plasma processing apparatus according to the present invention is assembled as a plasma processing apparatus by being integrated with a plasma processing unit in which a workpiece (workpiece) is installed. In the plasma surface treatment method using this plasma processing apparatus, two types of first plasma 16 and second plasma 17 are used. Each plasma is vacuum arc plasma generated by performing a vacuum arc discharge in an arc discharge unit set in a vacuum atmosphere in the first plasma generation unit 2 and the second plasma generation unit 3. The droplets 23 generated with each plasma generation are separated and removed, and the first plasma 16 and the second plasma 17 are guided to the plasma processing unit 1 via the common transport duct 10. At this time, by controlling the timing at which the first plasma 16 and the second plasma 17 are introduced into the common transport duct 10, surface treatment processing such as formation of a laminated film is performed on the surface of the work W in the plasma processing unit 1. . In this plasma surface treatment, a reactive gas or a non-reactive gas can be introduced as necessary.

  The plasma processing unit 1 is a rectangular film forming chamber having a work arrangement table 7 having a self-revolving mechanism for placing a work W therein, and is constituted by a vacuum chamber 4. The vacuum chamber 4 is provided with a pressure gauge and a vacuum control device 5, a processing gas introduction control system switching device 6, and a vacuum exhaust port 8. A vacuum exhaust control device, an on-off valve, a vacuum pump, and the like to be connected to the vacuum exhaust port 8 are not shown. On one side surface of the vacuum chamber 4, a plasma inlet 34 is opened. The plasma inlet 34 communicates with the plasma common transport duct 10 that guides the plasma generated from the two plasma generators 2 and 3. Between the vacuum chamber 4 and the last part of the common transport duct 10, a scanner device 18 for scanning plasma in the chamber is provided. Note that the film formation chamber does not necessarily have a square shape, and may have a cylindrical shape, a bell jar shape, or a modification thereof, as long as it has a container shape that can accommodate an object to be processed.

  The common transport duct 10 and the scanner device 18 are arranged linearly with respect to the plasma inlet 34, in other words, toward the center of the chamber. The common transport duct 10 is connected to a plasma transport path 9 disposed in a direction crossing the linear direction. The plasma transport path 9 bends substantially at right angles to the common transport duct 10, bends in a substantially crank shape with respect to the first plasma transport path connected to the first plasma generator 2 and the common transport duct 10, and the second plasma It consists of a second plasma transport path connected to the generator 3. The first plasma generation unit 2 is disposed on the start end side of the first plasma transport path, and the second plasma generation unit 3 is disposed on the start end side of the second plasma transport path. The first plasma generation unit 2 has a vacuum arc discharge unit composed of an anode (anode) 12 and a cathode (cathode) 13. Similarly, the second plasma generating unit 2 has a vacuum arc discharge unit composed of an anode 14 and a cathode 15. Each arc discharge unit is provided with a trigger electrode (not shown), an arc stabilization magnetic field generator (electromagnetic coil or magnet) 24 and the like in addition to the cathode and the anode electrode. The trigger electrode is an electrode for inducing a vacuum arc between the cathode and the anode. The arc stabilizing magnetic field generator 24 is disposed on the outer periphery of the vacuum chamber in the arc discharge portion, and is for stabilizing the cathode spot of the vacuum arc and the plasma generated by the arc discharge.

The cathodes 13 and 15 are sources for supplying a main constituent material of plasma, and the forming material is not particularly limited as long as the material is conductive solid. Regardless of whether it is a simple metal, an alloy, an inorganic simple substance, an inorganic compound (metal oxide / nitride) or the like, they can be used alone or in combination of two or more. The constituent particles of the plasma are not only the plasma-charged particles (ions, electrons) originating from the vaporized substances from the cathodes 13 and 15 in the arc discharge section, or the vaporized substances and the introduced gas (source), Includes neutral particles of molecules and atoms. The deposition conditions in the plasma processing method (vacuum arc deposition method) are: current: 1 to 600 A (desirably 5 to 500 A, more desirably 10 to 150 A). Further, voltage: 5 to 100 V (desirably ¹⁰ to 80 V, more desirably ¹⁰ to 50 V), pressure: 10 ⁻¹⁰ to 10 ² Pa (desirably 10 ⁻⁶ to 10 ² Pa, more desirably 10 ⁻⁵ to 10 ¹ Pa). As a simple metal, Al, Ti, Zn, Cr, Sb, Ag, Au, Zr, Cu, Fe, Mo, W, Nb, Ni, Mg, Cd, Sn, V, Co, Y, Hf, Pd, Rh , Pt, Ta, Hg, Nd, Pb and the like. Examples of alloys (metal compounds) include TiAl, AlSi, and NdFe. Examples of the inorganic simple substance include C and Si. In addition, examples of the inorganic compound (ceramics) include oxides such as TiO ₂ , ZnO, SnO ₂ , ITO (Indium-Tin-0xide: indium oxide mixed with tin), In ₂ O ₃ , Cd ₂ SnO ₄ , and CuO. Furthermore, carbides / nitrides such as TiN, TiAlC, TiC, CrN, TiCN, etc. can also be mentioned.

  The material for forming the anodes 12 and 14 is not particularly limited as long as it does not evaporate even at the plasma temperature and is a non-magnetic material having conductivity. Regardless of whether it is a simple metal, an alloy, an inorganic simple substance, an inorganic compound (metal oxide / nitride) or the like, they can be used alone or in combination of two or more. The material used for the above-mentioned cathode can be appropriately selected and used. In the present embodiment, the anode is formed of stainless steel, copper, carbon material (graphite: graphite) or the like, and it is desirable to attach a cooling mechanism such as a water cooling type or an air cooling type to the anode. Also, the shape of the anode is not particularly limited as long as it does not block the entire progress of the arc plasma, and it is cylindrical (regardless of cylinder or square tube), coiled, U-shaped, and vertically and horizontally You may arrange | position by a pair parallel, or arrange | position and arrange in one place somewhere up and down, right and left, or several places.

Gas introduction may not be performed in the chamber of the plasma processing unit 1, but a gas introduction system (not shown) and a gas exhaust system (not shown) may be connected. A general-purpose system can be used as these systems. The gas introduction flow rate is controlled to be constant, and the degree of vacuum (pressure) of the entire container is controlled to be constant by controlling the exhaust flow rate. The introduced gas may be introduced from the arc discharge part or may be introduced from both the plasma processing part 1 and the arc discharge part. When introducing from both the plasma processing unit 1 and the plasma generating unit, the type of gas may be different. As the introduction gas, when no reactive gas is used, a rare gas (usually for maintaining a constant pressure) is used. , Ar, and He) are appropriately used. When a reactive gas is used, it reacts with evaporated particles (plasma particles) using a cathode material or the like as a source to easily form a multi-compound film. As reactive gas, nitrogen (N ₂ ), oxygen (O ₂ ), hydrogen (H ₂ ), hydrocarbon gas (C ₂ H ₂ , C ₂ H ₄ , CH ₄ , C ₂ H ₆ etc.), carbon oxide One or more types can be appropriately selected from the group of gases (CO, CO ₂ ) and used. Here, in order to control the reactivity, a rare gas may be mixed to adjust the concentration of the reactive gas. Also, alcohol vapor, organometallic gas, or organometallic liquid vapor can be used as the reactive gas.

  The droplet collecting part is located on the side facing the first plasma generating part 2 on the side of the second plasma transporting path bent in a substantially crank shape with respect to the common transporting duct 10 and along the first plasma transporting path. 11 collection ports 11B (see FIG. 10 and FIG. 11 described later) are arranged facing the first plasma generation unit 2. In the collection part 11, an inclined reflector 19 for droplets is provided. When vacuum arc plasma is generated in the first plasma generation unit 2 or the second plasma generation unit 3, droplets are generated from the cathode. In the first plasma generating unit 2, for example, when graphite is used for the cathode 13, when a vacuum arc plasma is generated, graphite droplets are generated from the cathode. The droplets 23 are emitted in all directions on the cathode surface as indicated by the trajectory indicated by the arrows. After being emitted, the droplets 23 move linearly and basically reflect elastically if an individual obstacle exists. . Therefore, it is most effective to collect the droplets in the direction facing the cathode. The droplets traveling straight from the first plasma generation unit 2 collide with the reflection plate 19 and can be reliably attached or deposited on the bottom, side walls, etc. of the collection unit, and reliably collected and dropped efficiently. Letts can be separated and removed.

  In order to collect the droplets traveling straight from the first plasma generation unit 2 in the droplet collection unit 11 and separate them from the plasma flow, the magnetic field generation unit that performs magnetic field guided transport from the first plasma transport path to the common transport duct 10 The first plasma transport path and the second plasma transport path are arranged. A first plasma extraction coil 25 and a first plasma bending coil 26 are provided from the start end side of the first plasma transport path, and a plasma focusing coil 27 is provided in the common transport duct 10. These coils are electromagnetic coils (electromagnets), and the first plasma 16 is guided to the common transport duct 10 from the first plasma transport path by the action of the magnetic field generated by the magnetic field generating unit composed of these electromagnetic coils. Therefore, the highly purified first plasma 16 can be introduced and transported to the common transport duct 10 while separating the straight traveling droplets. Similarly, second plasma extraction coils 31 and 32 and a second plasma bending coil 30 are provided on the starting end side of the second plasma transport path, and the second plasma is generated by the action of the magnetic field generated by these coils. 17 is guided to the common transport duct 10 from the second plasma transport path. Therefore, the highly purified second plasma 17 can be introduced and transported to the common transport duct 10 while separating the droplet traveling straight from the second plasma generating unit 3 by colliding with the side wall of the droplet collecting unit 11 and the like. it can. Note that a shutter 22 that is an opening / closing means for controlling the introduction timing of the second plasma into the common transport duct 10 is provided at the outlet of the second plasma generation unit 3. The second plasma extraction coils 31 and 32 are arranged before and after the shutter 22.

  The plasma processing apparatus having the above configuration adjusts the generation timing of the first plasma and / or the second plasma, or the introduction timing to the common transport duct 10, for example, to introduce into the common transport duct 10 simultaneously or temporally. In addition, it is possible to smoothly form a multilayer film including a film by vacuum arc plasma according to the film formation specifications and conditions of the workpiece by controlling the timing separately or partially simultaneously. In addition, the plasma processing apparatus according to the present embodiment supplies the two types of first and second plasmas 16 and 17 to the plasma processing unit 1 through the common transport duct 10 according to the film forming specifications and conditions. Thus, the apparatus structure of the plasma processing apparatus can be made compact.

  In order to clarify the structural features of the present invention, an apparatus structure example of a plasma processing apparatus studied at the stage leading to the present invention is compared with the above embodiment. 2 and 3 show a comparative example, but the same members as those of the embodiment of the present invention are denoted by the same reference numerals and description thereof is omitted.

  FIG. 2 is a cross-sectional configuration diagram of a plasma processing apparatus shown as a comparative example. This is a case where the first plasma generation unit 101 and the second plasma generation unit 102 using a vacuum arc (cathode arc) as an evaporation source / plasma source are directly attached to the side surface of the vacuum film formation chamber 100. Each of the first plasma generation unit 101 and the second plasma generation unit 102 includes an arc discharge unit including a cathode 103, an anode 104, and a stabilizing electromagnetic coil 105, and generates a first plasma 106 and a second plasma 107, respectively. In this case, since the cathode of the vacuum arc as an evaporation source faces the workpiece W in the chamber, the droplets 108 and 109 emitted from each cathode easily adhere to the workpiece W. In addition, since the first plasma generation unit 101 and the second plasma generation unit 102 are directly attached to the film forming chamber 100, the ratio of the first plasma generation unit 101 and the second plasma generation unit 102 to the side surfaces of the chamber increases and the apparatus structure is complicated.

  FIG. 3 is a cross-sectional configuration diagram of another plasma processing apparatus shown as a comparative example. This is an example in which a torus-type plasma magnetic transport duct 209 having a plasma transport coil 205 disposed in the second plasma generation unit 201 is provided and a filtered arc is disposed as an evaporation source. The second plasma 203 uses a vacuum arc evaporation source to which a torus (part of a donut-shaped duct) type magnetic filter is connected. This torus type filtered arc is effective in the case of a cathode that discharges molten droplets such as Cr and Al. Since the molten droplet 206 is fixed when it comes into contact with the solid, it can be collected mainly on the inner wall of the outer periphery of the torus duct. The first plasma generation unit 202 is connected to a T-shaped plasma transport duct 208 that also serves as a droplet collection unit that collects the droplets 207. However, in this case, the droplets can be separated and collected. However, since there are individual connection ports of the plasma flow of the first plasma 204 and the second plasma 203 to the film forming chamber 200, a plurality of them are provided. If it is to be arranged, the wall area of the film forming chamber is further restricted, and practically difficult to implement.

  In particular, in the case of FIG. 2 and FIG. 3, when the workpiece W is disposed and processed in one place in the film forming chambers 100 and 200, the processing by the first plasma and the processing by the second plasma are combined once. There is a defect that can not be done in the process. On the other hand, in the present embodiment, since each plasma is introduced via the common transport duct 10, a plurality of plasma generation sources are arranged in a compact manner without restricting the space in the film forming chamber. Simplification can be realized. Further, the plasma introduced through the common transport duct 10 is of high purity from which the droplets are separated, and the multilayer film can be formed smoothly and with high accuracy. Accordingly, the problems shown in FIGS. 2 and 3 such as the separation of droplets, the limitation of the wall area of the film formation chamber, and the precise formation of the multi-layer film formation are solved all at once. Smooth film formation and precise formation are realized.

  Hereinafter, the controllability of the multilayer film formation of the plasma processing apparatus according to the present invention will be described. 4 and 5 show a schematic cross-sectional view of a film forming example in which a buffer film is formed on the workpiece W using the plasma processing apparatus according to the present invention, and a timing chart of the film forming process. In the following cases, carbon for forming the DLC film, W, Cr, Ti for forming the buffer film, etc. are used as the evaporation sources for generating the first plasma 16 and the second plasma 17, respectively.

  FIG. 4 (4A) shows a case where the transition mixed film L3 is formed. FIG. 5 (5A) shows a timing chart of the film forming process. A buffer film L2 is first formed on the surface of the work W, and a desired modified film (DLC film L1) is formed thereon via a transition mixed film L3. For example, the Cr film is the buffer film L2, and the DLC is the modified film. In this case, the Cr film L2 relaxes the difference in stress between the substrate of the workpiece W and the DLC, and becomes an adhesive film for the DLC film. As shown in (5A) of FIG. 5, the buffer film L2 opens the shutter 22, turns on the magnetic field generation in the second plasma transport path, and performs the steady introduction of the second plasma 17. Next, the shutter 22 is opened and closed alternately, and the operation in the magnetic field generating part of the first plasma transport path is turned on / off to send the first plasma 16 and the second plasma 17 alternately to the common transport duct 10. To do. Thereby, the transition mixed film L3 is formed on the buffer film L2. After the formation, the shutter 22 is closed, the supply of the second plasma 17 is shut off, and the magnetic field generation in the first plasma transport path is turned on, so that the first plasma 17 is constantly introduced. At this time, since the transition mixed film L3 is formed in advance as an intermediate underlayer, the DLC film L1 can be stably stacked on the intermediate mixed layer.

  (4B) of FIG. 4 shows a film in which the buffer film and the modified film of (4A) are alternately stacked. FIG. 5B shows a timing chart of the multilayer film forming process. By repeating the same process as (5A), it is possible to form a multilayer structure in which the DLC film L4 is formed on the buffer film L5 with the transition mixed film L6 interposed therebetween. (4C) of FIG. 4 shows a case where the transition mixed film L7 is formed thick on the buffer film L8 by using the above transition mixed film forming process. As shown in the timing chart of (5C) in FIG. 5, in this case, only the transition mixed film L7 is formed without the first plasma 17 being in a steady introduction state. When the film forming process is executed, the opening / closing control of the shutter 22, the coil drive control of the magnetic field generation unit, and the like necessary for the plasma introduction timing control are managed by a sequencer and a computer control device (not shown).

  FIG. 6 is a schematic cross-sectional view showing a film formation example in which a transition mixed film is not formed. A comparison is made between when the transition mixed film shown in FIG. 4 is used and when it is not used. (6A) and (6B) are the cases where the transition mixed film is not formed as a layer in (4A) and (4B) of FIG. (7A) and (7B) of FIG. 7 show timing charts corresponding to the film forming processes of (6A) and (6B) of FIG. In any film forming process, since the transition mixed film is not formed, only the steady introduction state of the second plasma 17 and the first plasma 16 is controlled to be switched. Comparing the film formation states of FIGS. 4 and 6, in the case of FIG. 4 in which the transition mixed film layer is provided, the adhesion between the buffer film and the modified film is higher than in the case of FIG. Although such a transition layer needs to be formed in a short time, the plasma processing apparatus according to the present embodiment controls multilayer film formation by controlling the opening / closing of the shutter 22 and the coil drive control of the magnetic field generator. The composite multilayer film formation including the transition mixed film and the like can be easily manufactured with high accuracy.

Details of the internal configuration of the plasma processing apparatus according to the present invention will be described below.
FIG. 8 is a schematic configuration diagram around the droplet collecting unit 11 according to the present invention. (8A) shows the periphery of the droplet collection unit 11. The droplet collection unit 11 includes a droplet collection port 11A having the same diameter as the duct diameter of the first plasma transport path connected to the first plasma generation unit 2 and a droplet collection duct. The entire shape of the duct of the first plasma transport path is substantially T-shaped, and the plasma generated in the first plasma generator 2 is substantially T-shaped duct (ignoring the connection of the second plasma) by the action of the magnetic field of the magnetic field generator. And bent at a right angle at the T portion and transported in the direction of the plasma processing portion 1. On the other hand, droplets and neutral particles (atoms and molecules) that are not affected by the magnetic field travel straight as indicated by an arrow 23 and proceed to the droplet collection unit 11. At this time, as indicated by an arrow 23A, depending on the discharge angle of the droplets, there are those that do not go to the droplet collecting unit 11 but enter the plasma processing unit 1 direction. This is considered to be because the droplet collection port 11A is formed to have the same diameter (same cross section) as the duct of the first plasma transport path. FIG. 8B shows a structure in which such a droplet is prevented from entering the film forming chamber 1.

  In (8B), the cross-sectional area of the droplet collection port 11B is larger than the transport cross-sectional area of the first plasma transport path. Therefore, the droplet collection port 11B having a diameter larger than that of the first plasma transport path also causes the droplet that is about to enter the plasma processing unit 1 to travel toward the droplet collection duct, thereby further improving the separation efficiency. Can do. In the embodiment of FIG. 1, a droplet collection port 11B is employed. Further, the droplet collection port 11B and the periphery of the collection port are expanded in diameter from the first plasma transport path, so that the droplets collected and cleaned on the inner surface of the droplet collection unit 11 are collected, and the droplets are collected. The attaching / detaching operation of the container can be performed easily and smoothly.

  FIG. 9 is a schematic layout diagram showing baffles and orifices disposed in the plasma transport path and the like according to the present invention. In the drawing, a plurality of baffles 21 and orifices 20 arranged along the inner wall of the first plasma transport path, the second plasma transport path, and the droplet collecting part 11 are shown. The baffle 21 is made of a plate-shaped piece and has a function of capturing or reflecting the droplet and preventing the droplet from traveling toward the plasma processing unit 1. The width of one piece of baffle 21 is about 3 to 15 mm, and is attached to the inside of the transportation route or the like at an angle of 30 to 150 ° with the inner wall. The baffle 21 may be attached so as to be separated from the inner wall surface by about 0.5 to 5 mm without contacting the inner wall. The orifice 20 is made of a perforated disk, and is used for temporarily reducing the inside diameter of the plasma transport path. The orifice 20 may have an inner diameter smaller than that of the baffle 21 (30 to 80 mm) and a plate thickness of 0.5 to 5 mm. By disposing the baffle 21 and the orifice 20, the amount of droplets traveling in the direction of the plasma processing unit 1 can be further reduced. It is preferable for the maintenance of the apparatus that the baffle 21 and the orifice 20 are attached to a removable deposition tube (disposed so as to cover the inner wall of the plasma transport path duct) for preventing dirt on the inner wall of the duct.

  FIG. 10 is a schematic configuration diagram showing a mounting state of the reflector 19 according to the present invention. A reflector 19 is disposed in the droplet collection unit 11 of the droplet collection unit 11. The reflector 19 arrange | positioned in the droplet collection port 11B of the droplet collection part 11 is shown. (10A) and (10B) of FIG. 10 are a plan view and a side view showing the periphery of the reflector 19, respectively. The reflector 19 is disposed at the end of the droplet collection unit 11 so as to be opposed to the transport direction of the first plasma transport path. By providing the reflecting plate 19 and the droplet capturing unit 11C, the droplets generated from the first plasma generating unit 2 are reflected downward by the reflecting plate 19 and guided to the droplet capturing unit 11C side, and the droplets are efficiently collected. Can be collected. Incidentally, reference numeral 35 in the figure denotes a plasma introduction port formed in the middle of the first plasma transport path and communicates with the common transport duct 10.

  FIG. 11 is a schematic configuration diagram of a droplet capturing unit 11C according to the present invention. A droplet capturing unit 11 </ b> C is disposed below the droplet collecting unit 11. The droplet capturing unit 11C includes a droplet collection container 11D for capturing droplets in the direction in which the reflecting plate 19 reflects the droplets. A large number of baffles 11E facing downward are planted on the inner wall of the droplet collection container 11D in order to enhance the droplet collection effect. Similarly to FIG. 10, the droplets are reflected downward by the reflecting plate 19 and guided to the droplet capturing unit 11 </ b> C side, so that the droplets can be collected more efficiently. Reference numeral 35 in the figure denotes a plasma inlet that is formed in the middle of the first plasma transport path and communicates with the common transport duct 10.

  FIG. 12 is a schematic configuration diagram for explaining the duct shape of the plasma transport path according to the present invention. The second plasma transport path bent in a substantially crank shape with respect to the common transport duct 10 is shown in (12A) and (12B). The duct shape of the plasma transport path connecting the first plasma generating unit 2 and the second plasma generating unit 3 is substantially cross-shaped or substantially X-shaped when the droplet collecting unit 11 of the droplet by-produced by the first plasma is also taken into account. It becomes a shape. A plasma introduction path 36 to the common transport duct 10 and a plasma introduction port 37 of the second plasma transport path are disposed in a crossing direction orthogonal to a horizontal line connecting the first plasma generation section 2 and the droplet collection section 11. Is done. As a specific example of the most efficient manufacture for this duct, the plasma inlet 35 and the plasma inlet 37 may have a circular shape indicated by reference numeral 40, but the droplet collecting port 11 </ b> B and the droplet collecting duct are denoted by reference numeral 41. It is preferable to use the same track shape shown in FIG. Compared to a circular or rectangular shape, the shape of the track-shaped collection duct can make the droplet collecting section larger than the section of the first plasma transport path. Since the mouth of the droplet collection part of the first plasma is widened, the droplets generated as a by-product of the first plasma can be collected more efficiently than when the cross section of the first plasma transport path is equal to the cross section of the droplet collection part. . The oblique wall described later is not necessary. In addition, since the cross-sectional area is the same shape, the collection and cleaning work of the droplets and membranes adhering to the inner surface of the droplet collecting part 11 and the attachment and detachment of an anti-adhesion cylinder and an inner member to prevent dirt inside the duct Work can be performed easily and smoothly. The track shape may be obtained by cutting a cylindrical tube into two in the axial direction and connecting them with a flat plate (38 on the drawing indicates a welding line).

  (12C) and (12D) of FIG. 12 show a duct structure in the case where a droplet collection port 39 to a droplet pocket provided at the terminal end of the droplet collecting unit 11 is provided. In this case, the cross section around the droplet collection port 39 has a deformed track shape as indicated by reference numeral 42, but this does not hinder the collection or cleaning operation of the droplet. In addition, as shown in (13A) to (13C) of FIG. 13 in the T-shaped plasma transport path, a duct having slanted walls S1 to S3 that also serve as inclined plates is conceivable. If the diameter of the final part of the droplet collecting duct is smaller than the diameter of the above, it becomes difficult to dispose the above-mentioned protection cylinder, and the plasma transport path shown in FIG. 12 is more practical.

  FIG. 14 is a schematic diagram for explaining the plasma generation method used in the present invention. The generation method of the second plasma may be appropriately selected according to the film formation specifications and conditions. As an applicable plasma generation method, for example, there is a plasma generation method for obtaining plasma directly from a solid. (14A) vacuum arc discharge (cathode arc discharge (or anode arc discharge employed in this embodiment), shunting for inducing plasma from the target material 91 by applying a high voltage pulse power source 90 as shown in (14B) There is an arc, and various types of sputtering (self-sputtering, magnetron sputtering, V-shaped sputtering) may be used.

  FIG. 15 is a schematic view for explaining another plasma generation method used in the present invention. As shown in (15A), the magnetron sputter includes unbalanced magnetron sputter. The sputter target 94 disposed in the vicinity of the permanent magnet 92 is used as a sputter evaporation source 96 to evaporate the solid, and the solid evaporate is unbalanced. The plasma flow is induced by, for example, converting the plasma into a plasma by the plasma function of the magnetron itself or by an inductively coupled RF plasma source coil. Further, as shown in (15B), the V-shaped sputtering includes a sputtering evaporation source 97 in which one set or a plurality of sets of permanent magnets 95 are arranged in a V-shape. In the case of V-shaped sputtering, as in the case of an unbalanced magnetron, the evaporated material is turned into plasma by electrons leaking from the sputtering region due to an unbalanced magnetic field.

  FIG. 16 is a schematic diagram for explaining another plasma generation method used in the present invention. Furthermore, as another applicable plasma generation method, there is a plasma generation method in which a solid is evaporated and then converted into plasma. In this case, resistance evaporation, electron beam evaporation, etc. can be used in addition to hollow cathode arc, electron beam excited plasma, and various types of sputtering (high frequency sputtering, medium frequency sputtering, DC sputtering, AC sputtering, magnetron sputtering). In the resistance evaporation method, as shown in (16A), the evaporation material 82 accommodated in the evaporation boat 81 is used as the resistance evaporation source 80, and the plasma is induced with the assistance of the capacitively coupled plasma source electrode 83. In the electron beam evaporation method, as shown in (16B) of FIG. 16, an electron beam is irradiated onto an evaporation target 86 as an electron beam evaporation source 84, and plasma is induced with the assistance of an inductively coupled plasma source coil 87. As a plasma for converting the evaporated material evaporated by these methods into a plasma, a hollow cathode arc, an electron beam excited plasma, a direct current discharge, a low frequency / medium frequency / high frequency plasma (see FIG. 15 for an example of inductive coupling type. Capacitive coupling) Examples of the molds can be obtained by using pulse plasma, microwave plasma, surface wave plasma, electron shower plasma, or the like (see (16A) in FIG. 16).

  Furthermore, as another applicable plasma generation method, a method of converting a gas or a vaporized or misted liquid into plasma can be used. DC discharge, low frequency / medium frequency / high frequency plasma, pulse plasma, microwave plasma, surface wave plasma, or electron shower plasma can be used. FIG. 17 shows a method of transporting a gas or vaporized or misted liquid through the introduction pipe portion 303 and converting it into plasma by the plasma generating unit 300 (FIG. 17A), and a gas or vaporized or misted liquid. Shows a method (17B in FIG. 17) of converting the plasma into plasma by the plasma generation unit 301 disposed in the chamber 302. When plasma is generated by the plasma generation unit 300 through which the introduction pipe unit 303 penetrates, high-frequency plasma (inductive coupling type and capacitive coupling type), microwave plasma, and surface wave plasma can be used. When the plasma is generated in the chamber 302, the above-described method is possible. When the buffer film is made of a material that cannot be used in a vacuum arc, such as Si, a method other than these vacuum arcs may be used.

  FIG. 18 is a schematic structural diagram showing how the second plasma according to the present invention is attached to the plasma transport path, taking a vacuum arc as an example of the second plasma. However, in the drawing, an electromagnetic coil for plasma transport is omitted. In (18A), the second plasma generation unit 3 is mounted facing the direction of the plasma introduction path 36 to the common transport duct 10 (work direction). In this case, strictly speaking, since the vacuum arc plasma P1 emits droplets, this attachment mode is not preferable. This attachment mode may be a plasma source other than a vacuum arc. In other words, in the case of plasma other than a vacuum arc, when the generation of droplets is small or almost absent, this mounting mode is preferable because it is transported in the face of the workpiece and has the highest plasma transport efficiency. (18B) shows an embodiment of an arrangement in which the vacuum arc generation source for generating the second plasma does not face the plasma outlet. The plasma transport path connecting the second plasma generation unit 3 and the plasma introduction path 36 has a shape called a substantially “<” shape or a knee shape (Knee type).

  FIG. 19 is a schematic structural diagram showing another aspect of the attachment of the second plasma to the plasma transport path according to the present invention. (19A) is a method of connecting a vacuum arc generation source for generating the second plasma through a torus type magnetic filter. The torus type magnetic filter is the same as that described with reference to FIG. 3, and the molten droplet contained in the plasma P3 generated from the second plasma generating unit 3 is fixed when it comes into contact with the solid. It is collected on the inner wall of the outer periphery of the duct. In (19B), as described above, the axis of the connection duct of the second plasma generation unit and the axis of the plasma outlet are connected with a distance greater than the diameter of the connection duct of the second plasma generation unit 3 and the plasma introduction path 36. It is a method to do. When the second plasma P4 is a vacuum arc, droplets emitted from the cathode spot adhere to the facing duct wall inner surface 401 and are removed. In this case, a bent second plasma transport path 402 is formed in which the flow of the second plasma P4 avoids the duct wall inner surface 401 and flows into the plasma introduction path. A confluence region 400 of the droplet flow of the first plasma generation unit 2 and the second plasma P4 is generated at a point away from the plasma introduction path 36. In this case, a part of the droplet collecting part duct 11 also serves as a plasma transport duct for the second plasma 17 and a part of the inner wall serves as a droplet removing part for the second vacuum arc (second plasma). . For the cathode of the second vacuum arc, it is preferable to use a metal or alloy that by-produces molten droplets such as Cr, Al, Ti, and Hf.

  FIG. 20 is a schematic configuration diagram showing a three-dimensional arrangement example of the second plasma generation unit 3 according to the present invention. The first plasma generation unit 2, the second plasma generation unit 3, and the plasma introduction path 36 are arranged on one plane, but are not necessarily on the plane. (20A) in FIG. 20 shows a case where the entire second plasma generation unit 3 is arranged and connected in a three-dimensional manner so as to be a knee type. From the plane formed by the second plasma generation unit 3, the droplet collection unit 11 of the first plasma generation unit 2, and the plasma introduction path 36, the second plasma generation unit 3 is connected by rotating by −90 to + 90 °. Yes. (20B) shows a state in which the second plasma generation unit 3 is three-dimensionally arranged so as to form the substantially “<”-shaped plasma transport path shown in FIG. 18 (18B).

  FIG. 21 is a schematic diagram for explaining the direction of the plasma flow or the like in the arrangement example of the second plasma generation unit 3 of FIG. (21A) shows the relationship among the generation direction A of the first plasma, the generation direction B of the second plasma, the exit direction C to the plasma introduction path 36, and the direction D of the droplet flow of the first plasma 16. (21B) is the first plasma 16 generation direction A, the second plasma 17 generation direction B, the outlet direction C to the plasma introduction path 36, and the direction of the droplet flow of the first plasma 16 in (20B) of FIG. The relationship of D is shown.

  FIG. 22 is a schematic structural diagram showing a mounting configuration of the shutter 22 according to the present invention. In the first plasma generation unit 2 of FIG. 20, when the cathode point of the vacuum arc is graphite, the by-produced graphite droplet may enter the second plasma generation unit 3 in some cases. This causes contamination of the plasma generated in the second plasma generator 3. As shown in the plan view (22A), it is preferable to provide a shutter 22 in the plasma transport duct of the second plasma 17 from the viewpoint of preventing contamination. As described above, the side view (22B) of the second plasma generation unit (22A) of the shutter 22 has a movable opening / closing mechanism that is opened and closed in the direction of the arrow in the drawing in accordance with the film forming process and the mounting configuration. Show. The shutter 22 may have a flat plate shape, but preferably has a structure that reflects in a direction that does not travel toward the plasma introduction path 36 when the droplet travels in the direction of the second plasma generation unit 3. For this reason, a large number of baffles 21 for reflecting droplets are attached obliquely upward to the outer surface of the shutter 22 on the duct side. A baffle may be attached to the flat shutter. It is preferable to provide a droplet collection pocket 22a under the shutter.

  FIG. 23 is a schematic structural diagram of the shutter 22 according to the present invention. As shown in the figure, instead of a flat shutter with a baffle, a three-dimensional structure that can direct the reflection direction of the entrance droplets in directions other than the direction of the plasma introduction path 36 may be used. The shutter 51 shown in (23A) and (23B) has a shape cut obliquely downward, and the reflection direction of the droplet 53 entering the shutter port 50 can be directed downward. Further, a shutter 52 having a square plate bonding structure or a rounded structure as shown in (23C) may be used. A shutter mechanism may be provided on the first plasma generation unit 2 side as necessary.

  FIG. 24 is a schematic configuration diagram of the scanner device 18 according to the present invention. The diameter of the plasma flow to be transported is 30 mm to 70 mm. This is equal to the film formation area. Therefore, when a film is to be formed in a region beyond that, or when a plurality of objects to be processed are arranged in a region beyond that, a desired film can be obtained by scanning plasma. As shown in (24A), a scanner device 18 is disposed near the exit of the common transport duct 10. The scanner device 18 includes a scanner coil 62 made of an electromagnetic coil and a correction coil (not shown). As shown in the sectional view of (24B), the scanner coil 62 of (24A) includes an X-direction electromagnet 63 and a Y-direction electromagnet 64, which are electromagnetic coils, and is attached to the outer periphery of the scanner unit duct. When scanning in only one direction is sufficient, either one of the X-direction electromagnet 63 and the Y-direction electromagnet 64 may be provided.

  FIG. 25 is a waveform diagram showing a drive current used in the scanner device 18 according to the present invention. As shown in (25A), the spatter current can be scanned only in one direction in a one-dimensional manner by passing an alternating current through the electromagnet 62. On the other hand, as shown in (24B) of FIG. 24, when the X-direction electromagnet 63 and the Y-direction electromagnet 64 are attached, as shown in (25B) of FIG. By flowing currents 71 and 72 having a phase difference and periodically changing, it is possible to change the magnetic fields Bx, By and Bz to rotate the plasma flow or to scan two-dimensionally.

  FIG. 26 is a schematic wiring diagram for explaining a bias voltage application method in which the anode according to the present invention is set to the ground potential. In order to efficiently transport the plasma to the plasma processing unit 1 through the plasma transport path such as the common transport duct 10 or the like, as shown in the figure, the anodes (12, 14) are set to the ground potential, and the duct of the plasma transport path. A bias voltage from the bias power source 500 is preferably applied to the scanner unit (including the scanner unit). The bias voltage is preferably −30 V to +30 V, and in particular, the same voltage as the plasma potential, that is, +10 V to +20 V, particularly +15 V ± 3 V is often suitable. When a suitable bias voltage is applied to the plasma transport duct system, the plasma transport efficiency and the deposition rate are improved several times. In order to apply a bias to the plasma transport duct, the film forming chamber and the plasma transport duct (including the scanner section) must be insulated. In FIG. 26, the vacuum arc anode 12 of the first plasma generating unit 2 is disposed insulated from the film forming chamber.

  Also, the present invention can be applied to the case where the vacuum chamber itself of the first plasma generating unit 2 is used as an anode. When the anode is biased, the plasma transport efficiency is improved by 1 to 25%, and the deposition rate can be improved. When the anode is biased, the resistance of the anode is apparently improved, so that the current maintaining the plasma tends to flow to another region where it easily flows. In this case, since the place where it easily flows is the film forming chamber of the plasma processing unit 1 at the ground potential, the efficiency of transporting the plasma to the film forming chamber is improved. The anode bias voltage is suitably 0V to 10V, more preferably 0.5V to 5V.

  FIG. 27 is a schematic wiring diagram for explaining another method of bias voltage application according to the present invention. When a bias is applied to the anode, a resistor R may be connected in series with the anode 12 instead of using a voltage power source as shown in the figure. The resistance to be used is appropriately about 0Ω to 0.2Ω, and more preferably 0.005Ω to 0.1Ω. Since deposits accumulate on the anode surface of the vacuum arc, the surface resistance changes every moment. Therefore, an electronic load that can externally control the resistance value may be used.

  FIG. 28 is a schematic wiring diagram for explaining still another method of applying a bias voltage according to the present invention. The wiring diagram of an example of the system which uses the vacuum chamber 600 itself of the 1st plasma generation part 2 as an anode and applies a plasma transport duct bias and / or an anode bias is shown. In addition, when the adhesion prevention cylinder is arrange | positioned along the plasma transport duct, you have to make it apply a bias to the adhesion prevention cylinder. Further, the plasma transport duct and the scanner unit may be insulated and different bias voltages may be applied. That is, the bias voltage at the corresponding position may be changed according to the plasma state at each position. It is preferable to apply a voltage substantially equal to the plasma potential at each position as the bias voltage to be applied. A cascade bias in which a further subdivided bias is applied in accordance with the plasma transport direction may be performed.

  The present invention is not limited to the above-described embodiments and modifications, and includes various modifications and design changes within the technical scope without departing from the technical idea of the present invention. Needless to say.

  The plasma surface treatment method and the plasma treatment apparatus according to the present invention can be applied to a plasma processing apparatus mainly used for industrial purposes, and can form a film on the surface of a metal or non-metal workpiece. Accordingly, a plasma surface treatment method and plasma treatment capable of forming a multilayer film such as a metal, a semiconductor, an insulator, a DLC film, etc., or an alloy film, a ceramic film or a compound semiconductor film formed from a plurality of substances with a single processing apparatus. An apparatus can be realized. Furthermore, a simplified plasma processing apparatus can be provided by arranging a plurality of plasma generation sources in a compact manner. In addition, it is possible to smoothly form a multilayer film including a film by at least vacuum arc plasma, and to form a high-performance and high-purity coating film on an object to be processed using high-purity plasma. . Furthermore, it is possible to smoothly attach and detach the droplet recovery material, and to realize a plasma processing apparatus with high workability. By using high-purity plasma from which droplets are separated and removed, On the other hand, a plasma processing apparatus for forming a high-performance, high-purity coating film can be realized.

  Further, by means of a plasma generation means for obtaining plasma directly from a solid, a plasma generation means for obtaining plasma by evaporating a solid, a plasma generation means for obtaining plasma with a gas or a vaporized or misted liquid, and a vacuum arc plasma. A plasma processing apparatus for performing high-purity multilayer film formation according to various film formation specifications can be provided. In addition, it is possible to provide a plasma processing apparatus for multilayer film formation that easily performs film formation control according to various film formation specifications and conditions such as film thickness and layer configuration. Furthermore, it is possible to provide a plasma processing apparatus for forming a multilayer film, which has high droplet removal efficiency and plasma transport efficiency and can form a film at high speed using high-purity plasma.

  The object to be treated according to the present invention is composed of a metal film, an alloy film, a semiconductor film, an insulator film, a non-metal film such as a DLC film, or the like, or a film and a buffer film or various films. It can be used as various industrial products having a high-performance multilayer film and imparted with suitable wear resistance, heat resistance, corrosion resistance, conductivity, and the like. More specifically, various cutting tools such as hard metal cutting tools, soft metal cutting tools, dry cutting tools, high-speed cutting tools, resin molding dies, semiconductor molding dies, sintered bodies and ceramic molding dies. It can be used as various manufacturing apparatuses, products, and components thereof, such as molds such as molds requiring releasability, press molds, mechanical parts, sliding parts, water-repellent parts, and corrosion-resistant parts.

It is a section lineblock diagram of a plasma treatment apparatus concerning the present invention. It is a cross-sectional block diagram of the plasma processing apparatus shown as a comparative example. It is a cross-sectional block diagram of the other plasma processing apparatus shown as a comparative example. It is a schematic sectional drawing which shows the film-forming example which performed the film-forming containing a transition mixed film on the workpiece | work using the plasma processing apparatus which concerns on this invention. It is a timing chart of the film-forming process of FIG. It is a schematic sectional drawing which shows the film-forming example which does not form a transition mixed film. It is a timing chart of the film-forming process of FIG. It is a schematic block diagram around the droplet collection part which concerns on this invention. It is a schematic layout diagram showing a baffle and an orifice arranged in a plasma transport path and the like according to the present invention. It is a schematic block diagram which shows the attachment state of the reflecting plate which concerns on this invention. It is a schematic block diagram of the droplet capture part which concerns on this invention. It is a schematic block diagram for demonstrating the duct shape of the plasma transport path | route which concerns on this invention. It is a schematic structure figure showing the other droplet collection part concerning the present invention. It is a schematic diagram for demonstrating the plasma generation method used for this invention. It is a schematic diagram for demonstrating the other plasma generation method used for this invention. It is a schematic diagram for demonstrating the further another plasma generation method used for this invention. It is a schematic diagram for demonstrating another plasma generation method used for this invention. It is a schematic structure figure which shows the attachment aspect to the plasma transport path | route of the 2nd plasma which concerns on this invention. It is a schematic structure figure which shows another aspect of the attachment aspect to the plasma transport path | route of the 2nd plasma which concerns on this invention. It is a schematic structure figure showing the example of three-dimensional arrangement of the 2nd plasma generating part concerning the present invention. It is a schematic diagram for demonstrating direction of the plasma flow etc. in the example of arrangement | positioning of the 2nd plasma generation part of FIG. FIG. 3 is a schematic structural diagram illustrating a mounting configuration of a shutter according to the present invention. It is a schematic structure figure showing a shutter concerning the present invention. 1 is a schematic configuration diagram of a scanner device according to the present invention. It is a wave form diagram which shows the drive current used for the scanner apparatus which concerns on this invention. It is a schematic wiring diagram for demonstrating the method of the bias voltage application which made the anode the ground potential based on this invention. It is a schematic wiring diagram for demonstrating another method of bias voltage application which concerns on this invention. It is a schematic wiring diagram for demonstrating another method of the bias voltage application which concerns on this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Plasma processing part 2 1st plasma generation part 3 2nd plasma generation part 4 Vacuum chamber (deposition chamber)
5 Pressure gauge and vacuum control device 6 Processing gas introduction control system switching device 7 Work arrangement table 8 Vacuum exhaust port 9 Plasma transport path 10 Common transport duct 11A Droplet collection port 11B Droplet collection port 11C Droplet capture Part 11D Droplet Recovery Container 11E Baffle 12 Anode 13 Cathode 14 Anode 15 Cathode 16 First Plasma 17 Second Plasma 18 Scanner Device 19 Reflector 20 for Orifice 21 Baffle 22 Shutter 22a Collection Pocket 23 Droplet 24 Arc Stabilization Magnetic field generator 25 First plasma extraction coil (electromagnetic coil)
26 First plasma bending coil (electromagnetic coil)
27 Plasma focusing coil (electromagnetic coil)
34 Plasma inlet 36 Plasma inlet 37 Plasma inlet 38 Welding line 39 Droplet recovery port 50 Shutter port 52 Shutter 53 Droplet 62 Scanner coil (electromagnetic coil)
63 X direction electromagnet (electromagnetic coil)
64 Y-direction electromagnet (electromagnetic coil)
71 Current 72 Current 80 Resistance evaporation source 81 Evaporation boat 82 Evaporation material 83 Capacitive coupling plasma source electrode 84 Electron beam evaporation source 86 Evaporation target 87 Inductive coupling plasma source coil 90 High voltage power supply 91 Target material 92 Permanent magnet 94 Sputter target 95 Permanent magnet 96 Sputter evaporation source 97 Sputter evaporation source 100 Deposition chamber 101 First plasma generation unit 102 Second plasma generation unit 103 Cathode 104 Anode 105 Stabilizing electromagnetic coil 108 Droplet 109 Droplet 200 Deposition chamber 201 Second plasma generation unit 202 First plasma generator 203 Second plasma 204 First plasma 205 Plasma transport coil (electromagnetic coil)
206 droplet 207 droplet 209 torus type plasma magnetic transport duct 208 T-shaped plasma transport duct 300 plasma generating section 301 plasma generating section 302 chamber 303 introduction pipe section 401 duct wall inner surface 402 second plasma transport path 500 bias power source 600 vacuum chamber Bx magnetic field By magnetic field Bz magnetic field L1 DLC film L2 buffer film L3 transition mixed film L4 DLC film L5 buffer film L6 transition mixed film L8 buffer film L7 transition mixed film P1 vacuum arc plasma P3 plasma P4 second plasma S1 to S3 oblique wall W work

Claims (20)

A first plasma generating means for generating a first plasma by performing a vacuum arc discharge in an arc discharge section set in a vacuum atmosphere; and a droplet generated from a cathode of the arc discharge contained in the first plasma. A droplet separating means for separating from the first plasma and collecting it in a droplet collecting section; a second plasma generating means for generating a second plasma using a solid / liquid as a plasma source or a gas as a plasma working gas; A common transport duct for electromagnetically introducing the first plasma and the second plasma separated by the droplet separating means; and the first plasma electromagnetically induced via the common transport duct And a plasma processing section for subjecting a workpiece to surface treatment with the second plasma, the first plasma and the front Control means for controlling the timing of introducing the second plasma into the common transport duct, and a first plasma bending coil for electromagnetically inducing the first plasma to bend into the common transport duct; At least a second plasma bending coil that electromagnetically induces plasma to travel in a substantially crank shape is provided, and a first plasma transport path from the plasma generation part of the first plasma to the common transport duct is bent, and the first plasma transport path is bent. A collection port of the droplet collection unit is disposed in a direction facing the plasma generation unit of one plasma, and a second plasma transport path from the plasma generation unit of the second plasma to the common transport duct is substantially crank-shaped. A plasma processing apparatus comprising the path of: When the axis of the connection duct connected to the plasma generating part of the second plasma and the axis of the common transport duct are extended, the two plasma axes intersect with each other in a “<” shape. The connection duct is connected between the transport path and the droplet collecting part or on the side surface of the droplet collecting part, and the second plasma enters the first plasma transport path or the droplet collecting part. 2. The plasma processing apparatus according to claim 1, wherein the plasma processing apparatus is subsequently electromagnetically induced by the second plasma bending coil and proceeds in a substantially crank shape. The connecting duct connected to the plasma generating part of the second plasma is a curved torus duct, and the torus is provided between the first plasma transport path and the droplet collecting part or on the side surface of the droplet collecting part. The duct is connected, and after the second plasma enters the first plasma transport path or the droplet collecting part, it is electromagnetically induced by the second plasma bending coil and travels in a substantially crank shape. The plasma processing apparatus according to 1. The control means controls the introduction of the first plasma and the second plasma into which the droplets are separated into the common transport duct at the same time, separately in time, or partially simultaneously. The plasma processing apparatus according to 1, 2, or 3. Pre Symbol plasma processing apparatus according to any one of claims 1 to 4 transport sectional area equal to or larger cross-sectional area of the collecting opening the transportation path. The plasma processing apparatus according to any one of claims 1 to 5, wherein a cross section of the droplet collection part and the collection port has a track shape. The reflector which reflects a droplet is arrange | positioned in the terminal part of the said droplet collection part, and the droplet capture part which captures a droplet in the reflection direction of the droplet by the said reflector is arrange | positioned. The plasma processing apparatus according to claim 6. The droplet separation means includes a magnetic field generation unit provided in the transport path, and transports the first plasma, which is a droplet separated by a magnetic field generated by the magnetic field generation unit and the transport path, to the common transport duct. The plasma processing apparatus in any one of 1-7. 9. The plasma processing apparatus according to claim 1, wherein an angle formed between the first plasma transport path from the plasma generation unit of the first plasma to the common transport duct and the common transport duct is approximately 90 °. The plasma processing apparatus according to claim 1, wherein the second plasma is generated by a plasma generation method for directly obtaining plasma from a solid. The plasma processing apparatus according to claim 1, wherein the second plasma is generated by a plasma generation method for obtaining a plasma by evaporating a solid. The plasma processing apparatus according to any one of claims 1 to 9, wherein the second plasma is generated by a plasma generation method for obtaining plasma by gas or vaporized or misted liquid. The second plasma generating means is a plasma generating means for generating a vacuum arc plasma using cathode as a plasma source material, the second plasma in the plasma generating portion and said second plasma transport path is not faced with the plasma treatment unit The plasma processing apparatus according to claim 1, which is provided at a position. The plasma processing apparatus according to claim 1, wherein a part of the droplet collecting part also serves as a part of the second plasma transport path. The plasma processing apparatus according to claim 1, wherein an opening / closing means is disposed at a connection portion between the second plasma generating means and the second plasma transport path. The said opening / closing means is provided with a shape that reflects the droplets at an angle that does not re-enter the common transport duct side, and a storage part that stores the droplets is disposed below the opening / closing means. Plasma processing equipment. Wherein the first plasma generating means and / or, in the second plasma generating means and / or the common transport duct, any claim 1-16 that are arranged baffles and / or orifice to prevent the progression of the droplets A plasma processing apparatus according to claim 1. The plasma processing apparatus according to claim 1, further comprising a bias voltage applying unit that applies a bias voltage to the first plasma generating unit and / or the second plasma generating unit and / or the common transport duct. . The plasma processing apparatus according to claim 1, further comprising a bias unit that electrically biases the anode of the first plasma generation unit and / or the anode of the second plasma generation unit. The plasma traveling direction of the last part of the common transport duct is a z-axis direction, a vertical plane is an xy plane, and a deflection coil for scanning the plasma in the x direction and / or the y direction is disposed in the common transport duct. The plasma processing apparatus in any one of 1-19.

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