JP4879828B2 - Flip chip bonding method and flip chip bonding apparatus - Google Patents

Description

  The present invention relates to a flip chip bonding method and a flip chip bonding apparatus, and more particularly, to a flip chip bonding apparatus characterized by a configuration of a bonding head for supporting and bonding a semiconductor element.

Flip chip bonding is widely performed as a method for mounting a semiconductor element on a substrate. FIG. 5 shows a configuration of a bonding head 100 and a bonding method of a flip chip bonding apparatus used for flip chip bonding of semiconductor elements.
As shown in FIG. 5A, the bonding head 100 includes a head unit 30 that supports the semiconductor element 10 by air adsorption, and a head shaft 40 that moves the head unit 30 up and down. The head unit 30 includes an attachment unit 30a that sucks and supports the semiconductor element 10, a radiation fin unit 30b, and a heater attachment unit 30c, and passes through the heater attachment unit 30c, the radiation fin unit 30b, and the attachment unit 30a. An air flow path 32 having one end opened at the suction surface of the semiconductor element 10 of the attach portion 30a is provided. The head shaft 40 is slidably supported by the guide portion 42 using an air bearing.

  In the flip-chip bonding, as shown in FIG. 5A, the semiconductor element 10 is air-adsorbed to the attachment portion 30a, and the connection pads 22 of the substrate 20 supported by the base 25 and the bumps 12 of the semiconductor element 10 are aligned. Then, as shown in FIG. 5B, the bump (for example, gold bump) 12 is brought into contact with the solder 24 precoated on the surface of the connection pad 22 and heated to melt, and the bump 12 is further connected to the connection pad 22. The solder 24 is hardened and bonded by pressing it against the surface.

The reason why the head shaft 40 is supported by the air bearing is to reduce the sliding resistance of the head shaft 40 and to control the pressing load with high precision so that the flip chip connection can be reliably performed. The method in which the head shaft 40 is supported by the air bearing is effectively used for products that require much lower sliding resistance and higher accuracy in joining than the method in which the head shaft 40 is guided up and down by rollers. It is done. Conventionally, a semiconductor chip flip chip bonding apparatus having an air bearing function has been proposed (see Patent Documents 1 and 2).
JP-A-11-287211 JP 2002-118125 A

  By the way, in recent years, the density of semiconductor elements has increased, and the bumps have become narrow pitches. The connection pads 22 formed on the substrate 20 have also been narrowed, and the pattern width of the connection pads 22 is extremely fine, several tens of μm. Is formed. For this reason, when the semiconductor element 10 is flip-chip bonded to the substrate 20, the bumps 12 and the connection pads 22 of the semiconductor element 10 are misaligned and are not accurately connected, resulting in a product defect.

  When the semiconductor element 10 is flip-chip bonded to the substrate 20, the arrangement of the connection pads 22 of the substrate 20 and the bumps 12 of the semiconductor element 10 is detected by a camera, and the connection pads 22 and the bumps 12 are aligned and bonded. However, due to the positional deviation due to manufacturing tolerances of the connection pad 22 and the bump 12, the thermal expansion difference between the semiconductor element 10 and the substrate 20 at the time of flip chip bonding, the measurement error of the recognition camera, etc., the positional deviation is completely zero. It is impossible to join. As a result, the bump 12 of the semiconductor element 10 may be bonded to the connection pad 22 in a state of being displaced.

FIG. 6 shows a state in which the bump 12 is displaced with respect to the connection pad 22. FIG. 6A shows a case where the solder 24 is precoated on the connection pad 22 in a flat state, and FIG. The case where the solder 24 is precoated on the connection pad 22 so as to rise in a mountain shape will be described.
In flip chip bonding, the bumps 12 are brought into contact with the solder 24, and the solder 24 is softened and melted while being pushed down slightly. Therefore, when the bump 12 is pressed in a state of being displaced with respect to the connection pad 22, the bump 12 comes into contact with the slope of the solder 24 as shown in FIGS. 6B and 6D, and the bump 12 is bumped against the bump 12. A lateral load acts in a direction that causes 12 to be displaced laterally. As shown in FIG. 6D, this lateral load acts more strongly when the solder 24 is pre-coated in a mountain shape, and the air bearing is weak against the lateral load. As shown in FIG. 5B, the head shaft 40 of the bonding apparatus is displaced laterally, resulting in the bump 12 being bonded to the connection pad 22 with further displacement.

As shown in FIGS. 6 (c) and 6 (d), the solder 24 is pre-coated so that the connection pads 22 are raised in a chevron shape because the pattern width of the connection pads 22 is as narrow as 20 μm. Therefore, the amount of the solder 24 supplied to the connection pad 22 is supplemented by the thickness.
The air bearing gap between the head shaft 40 and the guide portion 42 is about 5 μm. However, since the pitch of the connection pads 22 is narrow in recent semiconductor devices, the product can be manufactured even if the positional deviation is about several μm. It cannot be ignored in terms of accuracy, reliability, and yield. In order to suppress the convex shape of the solder 24, a method of flattening the top of the solder 24 by flat pressing after pre-coating the solder 24 is also conceivable. In this method, the solder 24 is transferred to the pressing die. It is not realistic because it causes defects.

  The present invention has been made to solve these problems. When flip-chip bonding is performed using a bonding head having an air bearing function, a positional deviation between a bump of a semiconductor element and a connection pad formed on a substrate is achieved. It is an object of the present invention to provide a flip chip bonding method and a flip chip bonding apparatus that can accurately use flip chip bonding and can be suitably used for manufacturing a high-density semiconductor device.

In order to achieve the above object, the present invention comprises the following arrangement.
That is, a process in which a semiconductor element is heated and supported by a bonding head, and a conductive material is melted while pressing a bump formed on the semiconductor element in contact with a bonding conductive material attached to a connection pad of a substrate. And subsequent to the step of melting the conductive material, the step of bringing the bump into contact with the connection pad and pressurizing the semiconductor element against the substrate by the bonding head. A head portion that supports the semiconductor element, a head shaft that supports the head portion, a guide portion that guides movement of the head shaft in the pressing direction by an air bearing action, and a direction orthogonal to the pressing direction of the head shaft In the lateral direction, and in the step of melting the conductive material, the regulation is provided. In the step of restricting the lateral displacement of the head axis by means and pressing the semiconductor element against the substrate and pressing the semiconductor element against the substrate, the restriction by the restricting means is released, and the guide portion The head shaft is guided and pressurized. When the head shaft is guided and pressurized by the guide portion, the head shaft is guided and pressurized by the air bearing action.

Further, after the semiconductor element is supported by the bonding head and the substrate is supported by the base, the bump and the connection pad are accurately arranged by aligning the bump and the connection pad with the bonding position. Be joined.
Further, following the step of pressurizing the semiconductor element to the substrate, the step of forcibly cooling the bonding head, curing the conductive material, and bonding the semiconductor element to the substrate efficiently provides the semiconductor element. Bonded to the substrate.

  A head portion supporting the semiconductor element; a head shaft supporting the head portion; a guide portion for guiding movement of the head shaft in the pressing direction by an air bearing; and the pressing direction of the head shaft. A flip-chip bonding apparatus comprising a bonding head having a restricting means for restricting displacement in a lateral direction perpendicular to the head, wherein the restricting means is provided on one of the head shaft and the guide portion, and the restricting means is provided on the other. A non-interference part that does not interfere with the substrate is provided, and the semiconductor element is supported by the bonding head, and the bump formed on the semiconductor element is brought into contact with the bonding conductive material attached to the connection pad of the substrate and pressed to conduct electricity. In the step of melting the material, the displacement of the head axis is regulated by the regulating means to press the semiconductor element against the substrate, and the conductive In the step of pressurizing the semiconductor element against the substrate, the head shaft and the guide portion are relatively moved, the regulating means is positioned at the non-interference portion, and the guide portion causes the head shaft to move. The pressure is guided and pressurized.

Further, the restricting means is a roller attached to the guide portion and rolling in contact with the side surface of the head shaft, and the non-interference portion is a relief recess formed on the side surface of the head shaft. Thus, it is possible to easily switch between a state in which the displacement of the head axis in the lateral direction is restricted by the restriction means and a state in which the restriction is released.
The head unit includes an attachment unit that supports the semiconductor element by air adsorption, a heat dissipating fin unit for cooling the head unit when the conductive material is cured, and a temperature at which the conductive material is melted. Flip chip bonding operation can be performed efficiently by providing a heater attachment portion with a built-in heater that pressurizes.

  According to the flip chip bonding method and the flip chip bonding apparatus according to the present invention, in the step of melting the conductive material, the displacement of the head axis of the bonding head in the lateral direction is restricted, so that the bump becomes the connection pad. In the process of pressing the semiconductor element against the substrate, the restricting means is released, and the semiconductor element is pressed against the substrate by the air bearing action, thereby accurately controlling to a predetermined pressure. And pressurized. As a result, the bump and the connection pad can be flip-chip bonded with high accuracy, the reliability of the semiconductor device can be improved, and the occurrence of defective products in the manufacturing stage can be suppressed.

DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, preferred embodiments of the invention will be described in detail with reference to the accompanying drawings.
(Configuration of flip chip bonding equipment)
FIG. 1 shows a configuration of a bonding head which is a main component of a flip chip bonding apparatus according to the present invention. The bonding head 100 according to this embodiment includes a head unit 30 that supports the semiconductor element 10 and a head shaft 40 that drives the head unit 30 to move up and down. The head unit 30 includes an attach unit 30a that sucks and supports the semiconductor element 10, a heat radiating fin unit 30b, and a heater attach unit 30c. The head shaft 40 is guided in the ascending / descending direction by an air bearing action by the guide portion 42.

The attachment part 30a is formed in a block body having the same planar shape as the semiconductor element 10 to be sucked and supported. The radiating fin portion 30b is provided to dissipate heat from the head portion 30, and radiating fins are formed on the outer peripheral side.
The heater attach portion 30c is for heating the head portion 30 to a temperature at which the solder 24 melts, and has a built-in heater (not shown). An energization device is connected to the heater, and energization of the heater is controlled by the control unit. The heater attach portion 30c is also formed with a rectangular planar shape.

An air flow path 32 for air adsorbing the semiconductor element 10 to the attachment portion 30a is provided in communication with each of the attachment portion 30a, the heat radiation fin portion 30b, and the heater attachment portion 30c. One end 32a of the air flow path 32 opens at the center of the lower surface of the attach portion 30a with which the back surface of the semiconductor element 10 abuts. The other end of the air channel 32 opens to the side surface of the heater attach portion 30c, and a pipe (not shown) that communicates with the air channel 32 and communicates with the air suction device is attached to the side surface of the heater attach portion 30c.
An air blow device (not shown) is connected to the radiating fin portion 30b, and is configured to discharge cooling air from between the radiating fins when radiating heat from the radiating fin portion 30b.
The attach part 30a, the heat radiating fin part 30b, and the heater attach part 30c are formed of a material having good thermal conductivity such as copper or aluminum.

The head shaft 40 that supports the head unit 30 is formed in a block body having a square planar shape. FIG. 1B shows a planar arrangement of the head shaft 40 and the guide portion 42, and a sliding clearance of about 5 μm is provided between the head shaft 40 and the side surface of the head shaft 40. A guide part 42 is arranged.
In the present embodiment, as a restricting means for preventing the head shaft 40 from being laterally displaced, a restricting roller 44a that rolls against the side surface of the head shaft 40 at the lower end and the upper end of the guide portion 42, 44b is provided.

  The head shaft 40 and the guide portion 42 are formed so as to be relatively movable in a direction (vertical direction) in which the semiconductor element 10 is pressed against the substrate 20. On the side surface of the head shaft 40, when the head shaft 40 moves downward relative to the guide portion 42, the rollers 44 a and 44 b are separated from the side surface of the head shaft 40, and the rollers 44 a and 44 b are disposed on the head shaft 40. Relief recesses 46a and 46b are provided for avoiding the action of regulating lateral (horizontal) displacement. The escape recesses 46a and 46b are provided adjacent to the arrangement positions of the respective rollers 44a and 44b, and an inclined surface is formed between the escape recesses 46a and 46b and the side surface of the head shaft 40.

(Flip chip bonding process)
FIGS. 2 and 3 show a process of flip-chip bonding the semiconductor element 10 to the substrate 20 using a flip-chip bonding apparatus equipped with the bonding head.
FIG. 2A shows a state in which the substrate 20 is positioned and set on the base 25 and the semiconductor element 10 is air-adsorbed on the bonding head. The substrate 20 is supported on the base 25 by air adsorption. The semiconductor element 10 is supported by air suction on the lower surface of the attachment portion 30a through the air flow path 32 by the air suction mechanism.

  In this embodiment, Sn-based solder 24 is supplied to the connection pads 22 formed on the substrate 20 to bond the semiconductor element 10 to the substrate 20. After the semiconductor element 10 is sucked and supported on the head part 30, the heater heating by the energizing device connected to the heater attaching part 30c is turned on, and the heater attaching part 30c starts to be heated to about 300 ° C. where the Sn-based solder 24 melts. To do. The base 25 that supports the substrate 20 is heated to about 100 ° C. Note that the solder material for bonding the bumps 12 of the semiconductor element 10 to the connection pads 22 is not limited to Sn-based solder, and an appropriate conductive material is used. The heating temperature of the semiconductor element 10 and the base 25 are adjusted according to the conductive material used. The heating temperature may be set.

  In FIG. 2B, the planar position of the bump 12 (gold bump in the present embodiment) of the semiconductor element 10 supported by the head unit 30 and the connection pad 22 formed on the substrate 20 is detected by the camera 50. And the connection pad 22 are aligned. In this alignment step, alignment is performed by moving the bonding head (in the plane direction and the θ direction) so as to correct the positional deviation between the arrangement of the bumps 12 and the arrangement of the connection pads 22 detected by the camera 50. Instead of moving the bonding head, the base 25 can be supported and aligned on an XY stage with a rotation adjusting mechanism.

After aligning the semiconductor element 10 and the substrate 20, the head portion 30 is lowered to a position where the bump 12 of the semiconductor element 10 contacts the solder 24 applied to the connection pad 22, and the solder 24 is melted (see FIG. 2 (c)). When the bump 12 is lowered until it contacts the solder 24, the head shaft 40 and the guide portion 42 of the bonding head 100 are lowered without relative displacement. That is, the rollers 44 a and 44 b descend while being in contact with the side surface of the head shaft 40.
The heater attachment part 30c of the head part 30 is heated to about 300 ° C., and is thermally conducted from the radiating fin part 30b and the attachment part 30a to the semiconductor element 10, and the bump 12 contacts the solder 24, so that the solder 24 is melted. Start.

FIG. 2D shows a step of melting the solder 24 by lowering the head portion 30 so that the bump 12 is slowly submerged in the solder 24.
The operation of bringing the bumps 12 into contact with the solder 24 is mainly intended to melt the solder 24, but since the solder 24 is solid until it melts, the semiconductor element 10 is pushed down by the head portion 30 and the solder is formed by the bumps 12. When 24 is pressurized, the head portion 30 receives a lateral load as described above.

  On the other hand, in this embodiment, in a state where the bumps 12 are in contact with the solder 24 and melted, as shown in FIG. 2D, a roller 44a supported by the guide portion 42 on the side surface of the head shaft 40. 44b abut, the rollers 44a and 44b restrict the head shaft 40 from being displaced laterally. That is, even if the bump 12 of the semiconductor element 10 contacts the solder 24 precoated on the connection pad 22 and a lateral load is applied to the bump 12, the head shaft 40 is displaced laterally in this embodiment. The solder 24 is melted while the bumps 12 are lowered according to the preset positioning positions.

  In the operation of melting the solder 24 by bringing the bump 12 into contact with the solder 24, the solder 24 does not exert a very strong pressure, but the air bearing is easily displaced in the lateral direction. , 44b to restrict the lateral displacement of the head shaft 40 and melt the solder 24 is effective as a method for mounting the semiconductor element 10 on the substrate 20 without being displaced in flip chip bonding.

  When the solder 24 is melted, the head portion 30 is further lowered, and the bump 12 is pressed with a predetermined pressure while the bump 12 is in contact with the surface of the connection pad 22 so as to crush the bump (FIG. 3 ( a)). The operation of bringing the bumps 12 into contact with the connection pads 22 and crushing the bumps 12 is an operation for reliably bonding all the bumps 12 formed on the semiconductor element 10 to the connection pads 22. It is effective to guide and support the head shaft 40 with an air bearing so as to apply pressure and pressurize under a low sliding resistance.

  In the present embodiment, the relief recesses formed on the side surface of the head shaft 40 by the rollers 44 a and 44 b that are in contact with the side surface of the head shaft 40 in a state where the head unit 30 is lowered to the position where the bump 12 contacts the connection pad 22. The head shaft 40 and the guide portion 42 are supported by air bearings. FIG. 3A shows a state in which the head shaft 40 has moved downward relative to the guide portion 42 and the rollers 44a and 44b have moved to the positions of relief recesses 46a and 46b formed on the side surfaces of the head shaft 40. Show. As the rollers 44a and 44b move to the positions of the relief recesses 46a and 46b, the rollers 44a and 44b are separated from the side surface of the head shaft 40 and do not interfere with the head shaft 40. As a result, the head shaft 40 is slidably supported by the guide portion 42, and the semiconductor element 10 is pressed against the substrate 20 with a predetermined pressure.

FIG. 3B shows a process of starting the cooling of the head portion 30 and hardening the solder 24 after the bump 12 is pressed against the connection pad 22 with a predetermined pressure. While the energization of the heater attachment portion 30c by the energization device is turned off, the air blowing device is activated to release air from the radiating fin portion 30b, and the solder 24 is forced through the semiconductor element 10 and the bump 12 by the radiating fin portion 30b. Start cooling.
This cooling process is performed in a state in which the semiconductor element 10 is sucked through the air flow path 32 and is adsorbed to the attachment portion 30a. The solder 24 can be efficiently cured by utilizing the heat radiation action of the heat radiation fin portion 30b. FIG. 3C shows a state in which the temperature of the head unit 30 has dropped and the solder 24 has been cured.

After the solder 24 is cured, air suction by the air flow path 32 is stopped and the head unit 30 is raised. FIG. 3D shows a state in which the semiconductor element 10 is bonded to the substrate 20 and the head unit 30 is raised to the upper position. The heater attach portion 30c is turned off and the temperature is lowered, and the heat radiating fin portion 30b is also lowered by air blow.
The next flip chip bonding operation is shifted from this state. That is, the next semiconductor element 10 is air-adsorbed to the head unit 30 while the temperature of the head unit 30 is lowered, and the next flip chip bonding operation is performed according to the above-described cycle.

  According to the flip-chip bonding method of the present embodiment, even when a lateral load is applied to the bump 12 when the bump 12 of the semiconductor element 10 abuts on the solder 24 precoated on the surface of the connection pad 22 and melts, the head The shaft 40 is not displaced in the lateral direction, and therefore it is possible to prevent the positional deviation between the bump 12 and the connection pad 22. Further, when the bump 12 is finally pressed and bonded to the connection pad 22, high-precision pressure bonding can be performed by supporting the head shaft 40 by the air bearing and pressurizing.

  In the above embodiment, when the bump 12 is brought into contact with the solder 24, the head shaft 40 is moved downward relative to the guide portion 42. However, when the head shaft 40 is moved downward, the guide portion 42 is moved. It is also possible to change the head shaft 40 from a state in which the head shaft 40 is regulated by the rollers 44a and 44b to a state in which the head shaft 40 is not regulated by the rollers 44a and 44b by moving the head shaft 40 far below the head shaft 40. .

  FIG. 4 shows a configuration example of the bonding head in this case. When the relief recesses 46a and 46b formed on the side surface of the head shaft 40 are formed below the normal position of the rollers 44a and 44b, and the bump 12 is brought into contact with the solder 24 and melted, the head shaft 40 and The entire bonding head is moved downward without relatively moving the rollers 44a and 44b (FIG. 4A). Then, from the state in which the bump 12 is in contact with the connection pad 22, the guide portion 42 is lowered relative to the head shaft 40, and the rollers 44 a and 44 b are separated from the side surface of the head shaft 40. The semiconductor element 10 is pressed and bonded to the substrate 20 by the action (FIG. 4B), whereby the bump 12 can be bonded to the connection pad 22 without being displaced.

  As a means for restricting the head shaft 40 with respect to the guide portion 42, instead of providing the rollers 44a and 44b as described above, a member that slides easily with respect to the side surface of the head shaft 40, for example, wear resistance. A highly rigid plate may be brought into contact with the side surface of the head shaft 40 and regulated. In this way, the restricting means can be appropriately formed of a material as long as it restricts the head shaft 40 so as to maintain a predetermined gap interval with respect to the guide portion 42.

  Further, in each of the above-described embodiments, the guide portion 42 is provided with the rollers 44a and 44b as restricting means. However, the restricting means may be provided on the head shaft 40 instead of being provided on the guide portion 42. . This is because the restricting means is provided for the purpose of restricting the mutual position of the head shaft 40 and the guide portion 42 from being displaced. When the head shaft 40 is provided with restricting means such as a roller, a non-interfering portion such as a relief recess that does not interfere with the restricting means is provided on the inner surface of the guide portion 42, and the bump 12 contacts the solder 24. May be set to switch between a state in which the head shaft 40 and the guide part 42 are mutually regulated and a state in which the regulation is released in a state in which the pressure is in contact with the surface of the connection pad 22. .

  According to the flip-chip bonding apparatus according to the present invention, even when the solder 24 is attached to the surface of the connection pad 22 formed on the substrate 20 so as to rise in a mountain shape, The semiconductor element 10 can be flip-chip bonded without being displaced from the position where the bumps 12 are positioned. As a result, even when the semiconductor element 10 is flip-chip bonded to the substrate 20 on which the connection pads 22 are formed at a very narrow pitch, the bumps 12 and the connection pads 22 can be connected with high accuracy. Thus, the manufacturing yield of the semiconductor device to be manufactured can be improved, and the reliability of the semiconductor device can be improved.

It is sectional drawing (a) and a top view (b) which show the structure of the bonding head of a flip chip bonding apparatus. It is explanatory drawing which shows the manufacturing process which flip-chip bonds a semiconductor element to a board | substrate. It is explanatory drawing which shows the manufacturing process which flip-chip bonds a semiconductor element to a board | substrate. It is sectional drawing which shows the other structural example of a bonding head. It is sectional drawing which shows the structure of the conventional bonding head. It is explanatory drawing which shows the motion of a head axis | shaft when a bump contact | abuts to solder.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Semiconductor element 12 Bump 20 Board | substrate 22 Connection pad 24 Solder 30 Head part 30a Attached part 30b Radiation fin part 30c Heater attached part 32 Air flow path 40 Head axis 42 Guide part 44a, 44b Roller 46a, 46b Escape recessed part 50 Camera

Claims (6)

A step of heating and supporting the semiconductor element by a bonding head, and melting the conductive material while pressing the bump formed on the semiconductor element in contact with the conductive material for bonding attached to the connection pad of the substrate;
Subsequent to the step of melting the conductive material, the step of bringing the bump into contact with the connection pad and pressurizing the semiconductor element to the substrate by the bonding head,
The bonding head includes a head portion that supports the semiconductor element, a head shaft that supports the head portion, a guide portion that guides movement of the head shaft in the pressing direction by an air bearing action, and the head shaft. A regulating means for regulating displacement in a lateral direction perpendicular to the pressing direction,
In the step of melting the conductive material, the displacement of the head axis is regulated by the regulating means to press the semiconductor element against the substrate,
In the step of pressurizing the semiconductor element onto the substrate, the regulation by the regulating means is released, and the head shaft is guided and pressurized by the guide portion. After supporting the semiconductor element on a bonding head and supporting the substrate on a base,
2. The flip chip bonding method according to claim 1, further comprising a positioning step of positioning the bump and the connection pad at a bonding position.   3. The method according to claim 1, further comprising the step of forcibly cooling the bonding head, curing the conductive material, and bonding the semiconductor element to the substrate following the step of pressing the semiconductor element to the substrate. Flip chip bonding method. A head portion that supports the semiconductor element, a head shaft that supports the head portion, a guide portion that guides movement of the head shaft in the pressing direction by an air bearing, and a direction orthogonal to the pressing direction of the head shaft A flip-chip bonding apparatus comprising a bonding head having a regulating means for regulating displacement in a lateral direction.
A restriction means is provided on one of the head shaft and the guide part, and a non-interference part that does not interfere with the restriction means is provided on the other.
In the step of melting the conductive material while pressing the bump formed on the semiconductor element by supporting the semiconductor element by the bonding head in contact with the conductive material for bonding deposited on the connection pad of the substrate, Restricting lateral displacement of the head axis by a regulating means and pressing the semiconductor element against the substrate;
In the step of melting the conductive material and pressurizing the semiconductor element to the substrate, the head shaft and the guide portion are relatively moved, the regulating means is positioned at the non-interference portion, and the guide portion A flip chip bonding apparatus characterized in that the head shaft is guided and pressurized. The regulating means is a roller attached to the guide portion and rolling in contact with a side surface of the head shaft;
5. The flip chip bonding apparatus according to claim 4, wherein the non-interference portion is a relief recess formed on a side surface of the head shaft.   The head unit includes an attachment unit that supports the semiconductor element by air adsorption, a heat dissipating fin unit for cooling the head unit when the conductive material is cured, and a temperature at which the conductive material is melted. 6. The flip-chip bonding apparatus according to claim 4, further comprising: a heater attachment unit including a heater for pressing.

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