JP4879794B2 - Light emitting device - Google Patents

Description

  The present invention relates to a light emitting device including a light emitting diode chip.

  In recent years, a light-emitting diode chip (hereinafter also referred to as LED) chip has been frequently used as a light source of a lighting device. As a method of obtaining an illumination device that emits white light having an LED chip as the light source, a method using a combination of three types of LEDs, a red LED, a blue LED, and a green LED, and a phosphor that emits yellow light with a blue LED There is a method of using these in combination.

  An illumination device that emits white light is required to have sufficient luminance. Accordingly, lighting devices including a plurality of LED chips as light sources are currently commercialized.

  Patent Documents 1 and 2 disclose light-emitting devices that are excellent in heat resistance, light resistance, mass productivity, and the like and have a long lifetime in view of the above-described situation.

FIG. 15 is a cross-sectional view of a general light emitting device. Hereinafter, a description will be given with reference to FIG.
The light-emitting device 800 includes a Cu substrate 200, an insulating layer 300 bonded thereon, a Cu wiring layer 400 bonded thereon, and an LED chip 100 mounted thereon. The Cu wiring layer 400 serves as an extraction electrode of the LED chip 100 and includes a separation portion 500 for electrically insulating the extraction electrodes. The LED chip 100 and the Cu wiring layer 400 are electrically connected by a wire 700 . The LED chip 100 mounting portion on the Cu substrate 200 is sealed with a sealing resin 600 that is a light-transmitting resin material such as an epoxy resin.

  A conventional light emitting device 800 has an insulating layer 300 for electrically insulating the Cu substrate 200 and the LED chip 100 and also for electrically insulating the Cu wiring layer 400 on which the LED chip 100 is mounted. The separation portion 500 is provided. In general, the insulating layer 300 is made of a material having low reflectivity. When a part of the light generated from the LED chip 100 is incident on the separation portion 500 for electrically insulating the Cu wiring layer 400, the incident light is hardly emitted outside the light emitting device. This is because the spacing portion 500 has a hole shape, and the insulating layer 300 on the bottom surface of the spacing portion 500 having a hole shape has a low reflectance.

  For this reason, for example, in a light-emitting device 800 including a plurality of LED chips 100 arranged in series and parallel, a decrease in luminance due to light loss at the separation portion 500 between the extraction electrodes of the LED chip 100 occurs. As a result, the luminance of the light emitting device 800 itself decreases.

  The present invention has been made in view of the above reasons. An object of the present invention is to suppress a decrease in luminance due to light loss in a separated portion surrounded by a Cu wiring layer that is a metal plate and an insulating layer in a light emitting device including a plurality of LED chips arranged in series and parallel. It is to provide a light emitting device.

The present invention includes a substrate, a bonded on the substrate insulating layer, and a metallic plate which is joined on the insulating layer, the light emitting device and a light emission element, gold Shokuban is the separation portion, the light emitting The element is a light emitting device installed on a metal plate away from an end in contact with the separation portion.

  With this configuration, the amount of light from the light-emitting element that is not absorbed into the separation portion but reflected by the metal plate increases, so that light loss at the separation portion can be suppressed and light can be efficiently emitted to the outside. It becomes possible.

In the light-emitting device of the present invention, the distance from the end in contact with the separating portion to the light emitting element is preferably greater than the width of the upper surface of the light emitting element, or the same as the width of the upper surface of the light emitting element.

  With this configuration, a sufficient distance can be provided between the light emitting element and the separated portion, light loss at the separated portion can be suppressed, and light can be emitted more efficiently to the outside.

  In the light emitting device of the present invention, it is preferable that the light emitting element is installed on the bottom surface of the concave portion provided in the metal plate. According to this structure, the light emitted from the light emitting element is reflected by the surface of the metal plate having the recesses and efficiently emitted to the outside.

  In the light emitting device of the present invention, it is preferable that the surface of the metal plate has a convex shape of 100 to 500 nm in the height direction. According to this configuration, a part of the light emitted from the light emitting element is reflected on the surface of the metal plate having a convex shape, and is efficiently emitted to the outside.

  In the light-emitting device of the present invention, the insulating layer preferably has a function of reflecting light from the light-emitting element. With this configuration, light incident on the separation portion from the light emitting element is reflected by the insulating layer, so that light loss can be suppressed and light diffusion can be ensured.

  In the light-emitting device of the present invention, it is preferable to provide a reflective layer on the insulating layer in the separation portion. With this configuration, light incident on the separation portion from the light emitting element is reflected on the insulating layer by the reflective layer, so that light loss can be suppressed and light diffusion can be ensured.

  In the light emitting device of the present invention, the insulating layer or the reflective layer is preferably formed of a thermoplastic resin. In particular, the thermoplastic resins include polyolefin resins, polyester resins, polystyrene resins, poly-p-xylylene resins, polyvinyl acetate resins, polyacrylate resins, polymethacrylate resins, polychlorinated resins. Vinyl resin, polyvinylidene chloride resin, fluorine resin, polyacrylonitrile resin, polyvinyl ether resin, polyvinyl ketone resin, polyether resin, polyamide resin, diene resin, polyurethane resin, polyacetal, aromatic Polyamide, polyphenylene, polyarylate, polyphenylene oxide, polyphenylene sulfide, polyetheretherketone, polysulfone, polyethersulfone, polyimide, polyamideimide, polyesterimide, polyetherimide, polyester Benzimidazole, poly quinazoline dione, polybenzoxazinone, polyacene, poly imidazo pyro Ron, polyquinoline, Porinafuchirijin, be a polyquinoxaline or mixtures of at least two of them preferably.

In the light emitting device of the present invention, the insulating layer or the reflective layer is preferably formed of synthetic fibers and / or natural fibers. In particular, the synthetic fiber is a polypropylene fiber, a polyethylene fiber, an acrylic fiber, a nylon fiber, a vinylon fiber, a composite fiber of polyethylene and polypropylene, a composite fiber of polyester and polyolefin, a polyolefin synthetic pulp, or a mixture thereof. It is preferably hardwood bleached kraft pulp, softwood bleached kraft pulp, groundwood pulp, thermomechanical pulp, kenaf, or a mixture thereof.

  In the light emitting device of the present invention, the thermoplastic resin preferably contains an inorganic filler. In particular, the inorganic filler is preferably a metal salt, a metal hydroxide, or a metal oxide. Examples thereof include barium sulfate, calcium sulfate, magnesium sulfate, aluminum sulfate, barium carbonate, calcium carbonate, Metal salts such as magnesium chloride and basic magnesium carbonate, metal hydroxides such as magnesium hydroxide, aluminum hydroxide and calcium hydroxide, metal oxides such as calcium oxide, zinc oxide, magnesium oxide, titanium oxide, alumina and silica Etc. Furthermore, clays such as calcium silicates, cements, zeolites and talc can be used.

In the light emitting device of the present invention, the light emitting element is electrically connected to the metal plate with a bonding wire, a solder resist is provided around the light emitting element on the upper surface of the metal plate, and the light emitting element and the bonding wire are solder resist. It is preferable that the sealing resin is covered up to a position higher than the upper surface.

  In the present invention, “upper surface” and “upper portion” are surfaces that indicate a positive direction with respect to the substrate installation surface of the light emitting device, and “bottom surface” is contrasted with “upper surface” and “upper portion”. Thus, a surface that is negative in the height direction with respect to the substrate installation surface is used.

  Further, in the present invention, the bonding wire is a wire such as a wire for electrically bonding both the positive electrode and the negative electrode of the LED chip, as well as a positive electrode on one surface of the LED chip 6 or a surface facing it. In the case where the negative electrode is formed, the concept includes a conductive adhesive or the like when the electrode in contact with the bottom surface is electrically directly bonded to the bottom surface.

  Further, in this specification, description will be made by taking an “LED chip” as an example of a light emitting element. Further, in this specification, a case where metal plating is formed on a metal plate will be described as an example. However, metal plating is not necessarily formed.

  The present invention can provide a light emitting device including a plurality of LED chips, in which a decrease in luminance due to light loss at a separation portion between the lead electrodes of the LED chips is suppressed.

  Hereinafter, in the drawings of the present application, the same reference numerals represent the same or corresponding parts. In addition, dimensional relationships such as length, size, and width in the drawings are changed as appropriate for clarity and simplification of the drawings, and do not represent actual dimensions.

<Embodiment 1>
FIG. 1 is a schematic plan view of the light emitting device of this embodiment. FIG. 2 is a schematic cross-sectional view of a part of the light emitting unit in the light emitting device of this embodiment. FIG. 3 is a schematic plan view of a part of the light emitting section shown in FIG.

  First, the structure of a light emitting device according to an embodiment of the present invention will be described with reference to FIG. The light emitting device 1000 includes a plurality of light emitting units 1001, and each light emitting unit 1001 is electrically connected in a series / parallel arrangement. The light emitting device 1001 includes a mounting portion 11 for mounting to another member and a hole for aligning the mounting position 102 of the light emitting device 1000. The attachment portion 11 is provided at an end portion of the light emitting device 1000, and the hole is provided at substantially the center of the light emitting device 1001. The light emitting device 1000 includes a positive electrode external connection portion 91 and a negative electrode external connection portion 101 that are electrically connected to a plurality of light emitting portions 1001 arranged in series and parallel.

Next, the structure of the light emitting unit 1001 will be described with reference to FIG. The light emitting unit 1001 includes a substrate 1, an insulating layer 2 bonded on the substrate 1, a Cu metal plate 3 as a pair of metal plates formed by stacking the insulating layer 2 on the insulating layer 2, and a Cu metal. An LED chip 6 mounted on the surface of the plate 3 with a predetermined distance D from the silver plating 4 formed on the surface of the plate 3 and an end contacting the separation portion 8 of the Cu metal plate 3 spaced on the silver plating 4. And a bonding wire W that connects the Cu metal plate 3 on which the silver plating 4 is formed and the LED chip 6, and a phosphor as a sealing resin that is sealed so as to cover the LED chip 6 and the bonding wire W Translucent resin 7. The Cu metal plate 3 serves as a lead electrode of the LED chip 6 and has a separation portion 8 for electrically insulating the lead electrodes. A solder resist 5 is provided around the mounting surface of the LED chip 6. Here, as shown in FIG. 2, the distance D is the distance from the end of the Cu metal plate 3 on which the LED chip 6 is mounted to the end of the LED chip 6 on the side of the Cu metal plate 3 where the LED chip 6 is mounted. The distance d indicates the width of the LED chip 6 from the end on the separated portion 8 side to the end on the opposite side in the mounted LED chip 6. In the light emitting unit 1001 of the present embodiment, the insulating layer 2 has a function of reflecting light from the LED chip 6 and is made of a material having high reflectivity with respect to visible light. The upper surface of the translucent resin 7 is arranged above the upper surface of the solder resist 5.

  As shown in FIG. 2, the relationship between the distance D from the end of the Cu metal plate 3 to the LED chip 6 mounting position and the width d of the LED chip 6 is preferably D ≧ d. That is, the distance from the end of the Cu metal plate 3 in contact with the separating portion 8 to the LED chip 6 is preferably larger than the width of the upper surface of the LED chip 6 or the same as the width of the upper surface of the LED chip 6. If the distance D to the LED chip 6 is a sufficient distance that satisfies D ≧ d, the light from the LED chip 6 is reflected by the silver plating 4 before entering the separation part 8. Light loss is avoided.

In the present invention, silver plating 4 as a metal plating when not formed on Cu metal plate 3, the light from the LED chips 6 on the surface of Cu metal plate 3 is reflected.

  Next, the structure of the light emitting unit 1001 will be further described with reference to FIG. The positive electrode and the negative electrode of the LED chip 6 are bonded to the positive electrode wiring pattern 9 and the negative electrode wiring pattern 10 made of silver plating 4 (see FIG. 2) formed on the surface of the Cu metal plate, respectively. Electrically connected by W.

The light emitting device 1000, since plural said light emitting section 1001, it is possible to provide a high light emission luminance. This is because a part of the light emitted from the LED chip 6 is reflected on the surface of the silver plating 4 and efficiently emitted to the outside. Since the LED chip 6 is placed at a certain distance D from the separation portion 8, a part of the light emitted to the outside from the light emitting layer and the element side surface (including the substrate) of the LED chip 6 is efficiently reflected. It is. It is desirable that a part of the light radiated to the outside does not enter the separation portion 8 again.

  In the light emitting unit 1001 of the present embodiment, the insulating layer 2 is formed of a material having a high reflectance with respect to visible light, so that light incident on the separating unit 8 is efficiently reflected on the bottom surface of the separating unit 8. Can do. Therefore, the light emitting device 1000 has little light loss. Furthermore, it is preferable that the upper surface of the translucent resin 7 is disposed at a position higher than the upper surface of the solder resist 5 of the substrate, so that a part of the light emitted from the LED chip 6 is efficiently emitted to the outside.

FIG. 4 is a cross-sectional view showing each manufacturing process of the light emitting device of this embodiment.
First, as shown in FIG. 4A, a substrate 1 containing a metal such as aluminum is prepared.

  Next, as illustrated in FIG. 4B, the insulating layer 2 including a thermoplastic resin such as polyimide is formed on the substrate 1.

  Next, as shown in FIG. 4C, the Cu metal plate 3 on which the silver plating 4 is formed is joined to the insulating layer 2. The Cu metal plate 3 on which the silver plating 4 on which the LED chip is mounted (arranged) is formed serves as a lead electrode in the LED chip, and thus forms a separation portion 8 in order to provide insulation. Next, the solder resist 5 and the silicone rubber sheet 51 are arranged on the Cu metal plate 3 on which the silver plating 4 is formed in a state where the through holes 12 for arranging the LED chips and the bonding wires are formed.

  Next, as shown in FIG. 4D, the LED chip 6 is bonded to the Cu metal plate 3 at a position separated from the separating portion 8 by a distance D with a translucent resin. Next, electrical connection is made with pads (not shown) on the surface of the LED chip 6 by bonding wires W.

  Next, as shown in FIG. 4E, a translucent resin 7 containing a phosphor as a sealing resin is injected into the through-hole 12 and cured.

  Next, as shown in FIG. 4 (f), when the silicone rubber sheet 51 is removed, the translucent resin 7 containing the phosphor covering the LED chip 6 and the bonding wire W and having an upper surface higher than the upper surface of the solder resist 5. Is formed.

  As described above, the light emitting device 1000 in which, for example, 36 light emitting units 1001 as shown in FIG. 1 are arranged is manufactured.

  As the LED chip 6, for example, a blue LED chip made of a gallium nitride compound semiconductor in which a gallium nitride light emitting unit 1001 is formed on a sapphire substrate may be used, or a ZnO (zinc oxide) based LED chip 6 may be used. A blue LED chip made of a compound semiconductor may be used. Alternatively, InGaAlP-based or AlGaAs-based compound semiconductor LED chips may be used.

  In addition, the positive electrode and the negative electrode are formed on one surface of the LED chip 6 and two wires are bonded with the surface as the upper surface. An electrode having a negative electrode formed on the opposing surface may be used. In this case, one wire bonding may be performed on the electrode on the upper surface side. Moreover, although blue light emission was shown as an LED chip, the luminescent color is not limited to this, For example, you may use the thing of ultraviolet light emission and the thing of green light emission. Also, the method of obtaining the white color by converting the light emitted from the LED chip with the phosphor is shown, but it is necessary for the illumination such as white using the LED chips of three colors of red, green and blue, respectively, without using the phosphor. You can get a nice color.

  Moreover, it is preferable that the sealing resin mentioned above is translucent resin 7, such as an epoxy resin and a silicone resin. Moreover, when forming the translucent resin 7, the resin material for molding may be dropped. Alternatively, the sealing resin may be formed using a mold. As the shape of the sealing resin, for example, the sealing resin is formed into a hemispherical shape that is convex upward, and the sealing resin is used as a lens. It is also possible to have functions. Further, as phosphors to be contained in the translucent resin as the sealing resin, Ce: YAG (cerium activated yttrium / aluminum / garnet) phosphor, Eu: BOSE or SOSE (europium activated strontium / garnet) phosphor, europium An activated α sialon phosphor or the like can be suitably used.

<Embodiment 2>
FIG. 5 is a schematic cross-sectional view of a part of the light emitting unit in the light emitting device of this embodiment.

  The structure of the light emitting unit 2000 will be described with reference to FIG. The light emitting unit 2000 includes a substrate 1, a high reflectivity insulating layer 21 as an insulating layer bonded thereon, and a pair of metal plates that are stacked on the high reflectivity insulating layer 21 by forming a separation portion 8. And a Cu metal plate 3 as a metal plate, a silver plate 4 as a metal plate formed on the surface of the Cu metal plate 3, and a predetermined distance D from the end of the Cu metal plate 3 spaced above the silver plate 4. LED chip 6, bonding wire W that connects LED metal chip 3 with Cu metal plate 3 on which silver plating 4 is formed, and sealing resin that is sealed so as to cover LED chip 6 and bonding wire W And a translucent resin 7 containing a phosphor. A solder resist 5 is provided around the mounting surface of the LED chip 6. In the light emitting unit 2000 of the present embodiment, the high reflectance insulating layer 21 is formed of a material having a high reflectance with respect to visible light.

  The light emitting device of this embodiment can be manufactured by the same manufacturing process as that of Embodiment 1 except that the high reflectance insulating layer 21 is used instead of the insulating layer 2 in Embodiment 1.

The high-reflectance insulating layer 21 is formed of a material having a high reflectivity with respect to visible light, and synthetic fibers and / or natural fibers can be used as the material. Specifically, for example, polypropylene fiber can be used. In addition, for example, as the high reflectance insulating layer 21, polypropylene fiber, polyethylene fiber, acrylic fiber, nylon fiber, vinylon fiber, polyethylene-polypropylene composite fiber, polyester-polyolefin composite fiber, polyolefin synthetic pulp, or a mixture thereof It is one of the preferred embodiments. Examples of natural fibers include hardwood bleached kraft pulp, softwood bleached kraft pulp, groundwood pulp, thermomechanical pulp, kenaf, and mixtures thereof.

  Here, the LED chip 6, the phosphor, the sealing resin, the bonding wire, and the like can be appropriately selected from those described in the first embodiment.

  In the light emitting device according to the present embodiment, a part of the light emitted from the LED chip 6 is irradiated on the separating portion 8 and is reflected by the high reflectivity insulating layer 21 and emitted to the outside. Accordingly, the light emitting portion 2000 with higher luminance can be manufactured. Therefore, light loss due to the light emitting device can be suppressed.

  The reflectance defined in this specification is, for example, the reflectance obtained from the total reflectance measurement, and the high reflectance insulating layer 21 used in the present invention has a reflectance of about 90% or more. Light reaching the insulating layer incident on the separation portion can be reflected more efficiently than a conventional insulating layer.

<Embodiment 3>
FIG. 6 is a schematic cross-sectional view of a part of the light emitting unit in the light emitting device of the present embodiment.

  The structure of the light emitting unit 3000 will be described with reference to FIG. The light emitting unit 3000 includes a substrate 1, a high reflectivity insulating layer 22 as an insulating layer bonded thereon, and a pair of metal plates that are stacked by forming a separation portion 8 on the high reflectivity insulating layer 22. And a Cu metal plate 3 as a metal plate, a silver plate 4 as a metal plate formed on the surface of the Cu metal plate 3, and a predetermined distance D from the end of the Cu metal plate 3 spaced above the silver plate 4. LED chip 6, bonding wire W that connects LED metal chip 3 with Cu metal plate 3 on which silver plating 4 is formed, and sealing resin that is sealed so as to cover LED chip 6 and bonding wire W And a translucent resin 7 containing a phosphor. A solder resist 5 is provided around the mounting surface of the LED chip 6. In the light emitting unit 3000 of the present embodiment, the high reflectance insulating layer 22 is formed of a material having a high reflectance with respect to visible light.

  The light emitting device of this embodiment can be manufactured by the same manufacturing process as that of Embodiment 1 except that the high reflectance insulating layer 22 is used instead of the insulating layer 2 of Embodiment 1.

  The material having high reflectivity for visible light forming the high reflectivity insulating layer 22 is preferably a thermoplastic resin, and particularly preferably a thermoplastic resin in which an inorganic filler is blended. In the present embodiment, for example, titanium oxide can be used as the inorganic filler, and polyethylene terephthalate can be used as the thermoplastic resin.

  Other thermoplastic resins include, for example, high-density polyethylene, low-density polyethylene, linear low-density polyethylene that is a copolymer of ethylene and α-olefin, polypropylene, ethylene-propylene copolymer, and poly-4-methylpentene resin. Polyolefin resins typified by, etc., polyester resins typified by polyethylene terephthalate, polybutylene terephthalate, etc., polystyrene resins, poly-p-xylylene resins, polyvinyl acetate resins, polymethyl acrylate, polyacrylic acid Polyacrylate resin represented by ethyl, polymethacrylate resin represented by polymethylmethacrylate, polyvinyl chloride resin, polyvinylidene chloride resin, polytetrafluoroethylene, polychlorotrifluoro Ruech , Polyvinylidene fluoride, polyvinyl fluoride, fluororesins represented by copolymers of tetrafluoroethylene and hexafluoropropylene, polyacrylonitrile resins, polyvinyl methyl ether, polyvinyl ethyl ether, polyvinyl n- Polyvinyl ether resins represented by butyl ether, polyvinyl isopropyl ether, polyvinyl isobutyl ether, etc., polymethyl vinyl ketone, polymethyl isobropenyl ketone, polyethyl vinyl ketone, polyphenyl vinyl ketone, polynaphthyl vinyl ketone, poly-p- Polyvinyl ketone resins represented by chlorophenyl ketone, polyoxyalkyl vinyl ketone, etc., polyesters represented by polyacetaldehyde, polyethylene oxide, polypropylene oxide, etc. Ether resins, nylon 6, nylon 6-6, nylon 6-10, nylon 11, nylon 12, and other polyamide resins, polyisoprene, polybutadiene, and other diene resins, polyurethane resins, polyacetals, Aromatic polyamide, polyphenylene, polyarylate, polyphenylene oxide, polyphenylene sulfide, polyetheretherketone, polysulfone, polyethersulfone, polyimide, polyamideimide, polyesterimide, polyetherimide, polybenzimidazole, polyquinazolinedione, polybenzoxa Examples thereof include heat-resistant resins represented by dinone, polyacene, polyimidazopyrrolone, polyquinoline, polynaphthyridine, polyquinoxaline and the like.

  As the inorganic filler, metal salts, metal hydroxides, metal oxides and the like are preferably used. Examples of these include barium sulfate, calcium sulfate, magnesium sulfate, aluminum sulfate, barium carbonate, calcium carbonate, magnesium chloride, basic magnesium carbonate and other metal salts, magnesium hydroxide, aluminum hydroxide, calcium hydroxide, etc. Examples thereof include metal hydroxides, calcium oxide, zinc oxide, magnesium oxide, titanium oxide, alumina, and metal oxides such as silica. Furthermore, clays such as calcium silicates, cements, zeolites and talc can be used.

  Of these, considering comprehensively the dispersibility or dispersibility with the thermoplastic resin, the inorganic filler preferably contains barium sulfate, calcium carbonate, titanium oxide, alumina, and magnesium hydroxide. More preferably, the inorganic filler is barium sulfate or calcium carbonate, and barium sulfate is particularly preferable. When barium sulfate is used, precipitated barium sulfate having good dispersibility and mixing with the thermoplastic resin is preferred. The inorganic filler preferably has an average particle size of about 0.1 to 7 μm. More preferably, it is 0.2-5 micrometers.

  Here, the LED chip 6, the phosphor, the sealing resin, the bonding wire, and the like can be appropriately selected from those described in the first embodiment.

  In mixing the thermoplastic resin and the inorganic filler described above, for example, a mixer or the like can be used. When mixing, the mixing is performed at room temperature or a temperature in the vicinity thereof. After mixing, using a screw-type extruder, kneading and melt-extrusion at a temperature above the melting point or softening point of the thermoplastic resin, preferably at a melting point or softening point + 20 ° C. or higher and below the decomposition temperature of the thermoplastic resin, After cooling, it is cut and formed into a desired shape into a pellet. For forming the sheet from the thermoplastic resin composition, an extrusion method using a screw type extruder can be used.

  In the light emitting device according to the present embodiment, a part of the light emitted from the LED chip 6 is irradiated on the separation portion 8 and is reflected by the high reflectance insulating layer 22 and emitted to the outside. Accordingly, the light emitting unit 3000 having higher luminance can be manufactured. Therefore, light loss due to the light emitting device can be suppressed.

<Embodiment 4>
FIG. 7 is a schematic cross-sectional view of a part of the light emitting unit in the light emitting device of this embodiment.

  The structure of the light emitting unit 4000 will be described with reference to FIG. The light emitting unit 4000 includes a substrate 1, an insulating layer 2 bonded on the substrate 1, a Cu metal plate 3 as a pair of metal plates that are stacked by forming a separation portion 8 on the insulating layer 2, and a Cu metal. A silver plating 4 as a metal plating formed on the surface of the plate 3, an LED chip 6 mounted at a predetermined distance D from the end of the Cu metal plate 3 spaced on the silver plating 4, and the silver plating 4 A translucent resin 7 containing a bonding wire W connecting the Cu metal plate 3 formed with the LED chip 6 and a phosphor as a sealing resin sealed so as to cover the LED chip 6 and the bonding wire W With. A solder resist 5 is provided around the mounting surface of the LED chip 6. In the light emitting unit 4000 of the present embodiment, a reflective layer 23 having a high reflectivity with respect to visible light is provided on the insulating layer 2 of the separation portion 8.

  The reflective layer 23 is preferably a thermoplastic resin containing an inorganic filler, for example, and barium sulfate can be used as the inorganic filler, and a polypropylene resin can be used as the thermoplastic resin.

  The light-emitting device of this embodiment can be manufactured by providing the manufacturing process in Embodiment 1 with the process of providing the reflective layer 23 further. The step of providing the reflective layer 23 will be described by taking as an example a polypropylene resin as a thermoplastic resin and barium sulfate as an inorganic filler.

  In mixing the thermoplastic resin and the inorganic filler, for example, a mixer or the like can be used. When mixing, the mixing is performed at room temperature or a temperature in the vicinity thereof. After mixing, using a screw-type extruder, the melting point of the polyolefin resin (for example, 135 ° C.) or a temperature above the softening point (for example, 150 ° C.), preferably the melting point or the softening point + 20 ° C. or more, below the decomposition temperature of the polyolefin resin. The mixture is kneaded, melt-extruded (for example, 280 ° C.), cooled, cooled, and then cut into a desired shape into a pellet. For forming the sheet from the polyolefin resin composition, an extrusion method using a screw-type extruder can be used.

  The molding temperature of the sheet varies depending on the polyolefin resin to be used, but is usually a temperature not lower than the melting point or softening point of the resin to be used, preferably a melting point or softening point + 20 ° C. or higher and lower than the decomposition temperature.

  The obtained sheet is stretched to at least 50 μm in thickness in at least uniaxial direction by a roll method. The stretched sheet is cut so that the width is at least 250 μm. The reflective layer 23 is provided by pressing this sheet on the region surrounded by the insulating layer 2 at the upper portion of the separation portion 8. Alternatively, the reflective layer 23 is provided by adhering the sheet to an area surrounded by the insulating layer 2 at the upper portion of the separation portion 8 using an adhesive.

Other thermoplastic resins can be used those exemplified in the third embodiment. Moreover, what was illustrated in Embodiment 3 can be used as another inorganic type filler.

  And what was illustrated in Embodiment 2 can be used as a highly reflective material with respect to visible light.

  Here, the LED chip 6, the phosphor, the sealing resin, the bonding wire, and the like can be appropriately selected from those described in the first embodiment.

  In the light emitting device according to the present embodiment, a part of the light emitted from the LED chip 6 is supposed to be applied to the separation portion 8 and is reflected by the reflective layer 23 and emitted to the outside. Accordingly, the light emitting portion 4000 having higher luminance can be manufactured. Therefore, light loss due to the light emitting device can be suppressed.

<Embodiment 5>
FIG. 8 is a schematic cross-sectional view of a part of the light emitting unit in the light emitting device of this embodiment.

  The structure of the light emitting unit 5000 will be described with reference to FIG. The light emitting unit 5000 includes a substrate 1, an insulating layer 2 bonded on the substrate 1, a Cu metal plate 3 as a pair of metal plates that are stacked by forming a separation portion 8 on the insulating layer 2, and a Cu metal. A silver plating 4 as a metal plating formed on the surface of the plate 3, an LED chip 6 mounted at a predetermined distance D from the end of the Cu metal plate 3 spaced on the silver plating 4, and the silver plating 4 A translucent resin 7 containing a bonding wire W connecting the Cu metal plate 3 formed with the LED chip 6 and a phosphor as a sealing resin sealed so as to cover the LED chip 6 and the bonding wire W With. A solder resist 5 is provided around the mounting surface of the LED chip 6. In the light emitting unit 5000 of the present embodiment, the Cu metal plate 3 at the position where the LED chip 6 is mounted has a recess 13 having a bottom surface width equal to or larger than the width d of the LED chip 6.

  The light emission of the present embodiment is performed in the same manufacturing process as in the first embodiment, except that the Cu metal plate 3 on which the silver plating 4 in the first embodiment is formed is appropriately provided with a recess 13 having a bottom width equal to or larger than the width d of the LED chip 6 A device can be made. The depth of the recess 13 can be 1.5 to 3 times the height of the LED chip 6, for example.

  A part of the light emitted from the LED chip 6 is reflected by the surface of the metal plating having the recess 13 and is efficiently emitted to the outside. Further, when the silver-plated surface of the surface of the metal plate has a convex shape to be described later, part of the light emitted from the light-emitting diode chip is efficiently emitted to the outside. Accordingly, the light emitting portion 5000 having higher luminance can be manufactured. Therefore, light loss due to the light emitting device can be suppressed.

  Here, the LED chip 6, the phosphor, the sealing resin, the bonding wire, and the like can be appropriately selected from those described in the first embodiment.

<Embodiment 6>
FIG. 9 is a schematic cross-sectional view of a part of the light emitting unit in the light emitting device of the present embodiment.

  The structure of the light emitting unit 6000 will be described with reference to FIG. The light emitting unit 6000 includes a substrate 1, an insulating layer 2 bonded thereon, a Cu metal plate 3 as a pair of metal plates laminated with the separating portion 8 formed on the insulating layer 2, and a Cu metal. A silver plating 4 as a metal plating formed on the surface of the plate 3, an LED chip 6 mounted at a predetermined distance D from the end of the Cu metal plate 3 spaced on the silver plating 4, and the silver plating 4 A translucent resin 7 containing a bonding wire W connecting the Cu metal plate 3 formed with the LED chip 6 and a phosphor as a sealing resin sealed so as to cover the LED chip 6 and the bonding wire W With. A solder resist 5 is provided around the mounting surface of the LED chip 6. In the light emitting unit 6000 of the present embodiment, the surface of the silver plating 4 on the Cu metal plate 3 has a convex shape 41 of 100 to 500 nm, more preferably 150 to 350 nm in the height direction. When the silver plating 4 is not formed on the surface of the Cu metal plate 3, a convex shape is formed on the surface of the Cu metal plate 3.

  Except for providing the convex shape 41, the light emitting device of this embodiment can be manufactured by the same manufacturing process as that of the first embodiment.

  Here, the LED chip 6, the phosphor, the sealing resin, the bonding wire, and the like can be appropriately selected from those described in the first embodiment.

  A part of the light emitted from the LED chip 6 is reflected by the metal plating surface having the convex portion in the convex shape 41 and efficiently emitted to the outside. Thus, a light emitting portion 6000 with higher luminance can be manufactured. Therefore, light loss due to the light emitting device can be suppressed.

  If the convex shape 41 is less than 100 nm, light from the LED chip may not be efficiently reflected on the surface of the metal plating, and if it exceeds 500 nm, light may not be sufficiently diffused from the LED chip.

  In addition, by using the insulating layer or the reflective layer described in Embodiments 1 to 5 in Embodiments 6 and 7, light can be emitted to the outside more efficiently.

<Embodiment 7>
FIG. 11 is a schematic cross-sectional view of a part of the light emitting unit in the light emitting device of this embodiment.

  The structure of the light emitting unit 1002 will be described with reference to FIG. The light emitting unit 1002 includes a substrate 1, an insulating layer 2 bonded thereon, a Cu metal plate 3 as a pair of metal plates stacked with a separation portion 8 formed on the insulating layer 2, and a Cu metal. A silver plating 4 as a metal plating formed on the surface of the plate 3, an LED chip 6 mounted at a predetermined distance D from the end of the Cu metal plate 3 spaced on the silver plating 4, and the silver plating 4 A translucent resin 7 containing a bonding wire W connecting the Cu metal plate 3 formed with the LED chip 6 and a phosphor as a sealing resin sealed so as to cover the LED chip 6 and the bonding wire W With. A solder resist 5 is provided around the mounting surface of the LED chip 6.

  The present embodiment is an application of the first embodiment. However, the difference from Embodiment 1 is that the surface of the solder resist 5 between the individual LED chips 6 and the individual LED chips 6 is covered with the translucent resin 7.

According to this embodiment, the translucent resin 7 can be formed more easily.
<Eighth embodiment>
FIG. 12 is a plan view of a light emitting device in which the shape of the light emitting unit in FIG. 1 is a hexagon. FIG. 13 is a plan view of a light emitting device in which the shape of the light emitting unit in FIG. 1 is circular. FIG. 14 is a plan view of a light emitting device in which the shape of the light emitting unit in FIG. 1 is rectangular. As shown in FIG. 12, the light-emitting device 1003 can be manufactured by forming a hexagon with the light-transmitting resin 7. In addition, a light-emitting device 1004 can be manufactured by forming a circle with the light-transmitting resin 7 as illustrated in FIG. Further, as shown in FIG. 14, the light emitting device 1005 can be formed by forming a plurality of rectangles with the light-transmitting resin 7 and electrically connecting them.

  Here, the shape of the light emitting part is an example, and it is a hexagonal shape, a circular shape, or a rectangular shape, but it may have any shape.

<LED lamp>
FIG. 10A is a schematic perspective view of a fluorescent lamp type LED lamp. FIG. 10B is a schematic perspective view of a bulb-type LED lamp. FIG. 10C is a schematic perspective view of a fluorescent lamp type LED lamp.

  FIGS. 10A and 10B are application examples of a lighting device manufactured using the light-emitting device 1000 in FIG. 1 described in the first embodiment. As shown in FIG. 10A, a fluorescent lamp type LED lamp 7000 can be manufactured by combining a plurality of light emitting devices. In addition, as shown in FIG. 10B, a light bulb shaped LED lamp 8000 using the light emitting device of FIG. 1 can be manufactured.

  Further, as shown in FIG. 10C, it is possible to manufacture a fluorescent lamp type LED lamp 9000 by combining a plurality of light emitting units 1001.

  In addition to the light emitting device and the light emitting unit of Embodiment 1, the LED lamp can be manufactured by appropriately combining the above-described forms, materials, and the like of the light emitting device and the light emitting unit.

  In addition, the light emitted from the light emitting element of the present application is not limited to visible light, and even if the light has a wavelength such as ultraviolet, the effect of the present application can be obtained by appropriately combining materials of the insulating layer and the reflective layer. Is possible.

  It should be understood that the embodiments and examples disclosed herein are illustrative and non-restrictive in every respect. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

2 is a schematic plan view of the light emitting device according to Embodiment 1. FIG. 4 is a schematic cross-sectional view of a part of a light emitting unit in the light emitting device of Embodiment 1. FIG. FIG. 3 is a schematic plan view of a part of the light emitting unit shown in FIG. 2. FIG. 4 is a cross-sectional view illustrating each manufacturing process of the light-emitting device of Embodiment 1. 4 is a schematic cross-sectional view of a part of a light emitting unit in a light emitting device according to Embodiment 2. FIG. 6 is a schematic cross-sectional view of a part of a light emitting unit in a light emitting device of Embodiment 3. FIG. 6 is a schematic cross-sectional view of a part of a light emitting unit in a light emitting device according to Embodiment 4. FIG. FIG. 6 is a schematic cross-sectional view of a part of a light emitting unit in a light emitting device of Embodiment 5. FIG. 10 is a schematic cross-sectional view of a part of a light emitting unit in a light emitting device according to a sixth embodiment. (A) is a schematic perspective view of a fluorescent lamp type LED lamp, (b) is a schematic perspective view of a light bulb type LED lamp, and (c) is a schematic view of a fluorescent lamp type LED lamp. FIG. FIG. 10 is a schematic cross-sectional view of a part of a light emitting unit in a light emitting device according to a seventh embodiment. It is a top view of the light-emitting device which made the shape of the light emission part in FIG. 1 hexagonal. It is a top view of the light-emitting device which made the shape of the light emission part in FIG. 1 circular. It is a top view of the light-emitting device which made the shape of the light emission part in FIG. 1 the rectangle. It is sectional drawing of the conventional common light-emitting device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Substrate, 2,300 Insulating layer, 21, 22 High reflectivity insulating layer, 3 Cu metal plate, 4 Silver plating, 5 Solder resist, 6,100 LED chip, W bonding wire, 7 Translucent resin, 8,500 Separation part, 9 Positive electrode wiring pattern, 10 Negative electrode wiring pattern, 11 Mounting part, 12 Through hole, 13 Concave part, 23 Reflective layer, 41 Convex shape, 51 Silicone rubber sheet, 91 Positive electrode external connection part, 101 Negative electrode outside Connection part, 102 mounting position, 200 Cu substrate, 400 Cu wiring layer, 600 sealing resin , 700 wires , 800, 1000, 1003, 1004, 1005 light emitting device, 1001, 1002, 2000, 3000, 4000, 5000, 6000 light emitting Part, 7000,9000 fluorescent lamp type LED lamp, 8000 bulb type LED lamp.

Claims (12)

A substrate,
An insulating layer bonded onto the substrate;
A metallic plate which is joined on the insulating layer,
And the light emission element,
In a light emitting device comprising:
Before Kikin Shokuban has a spacing portion,
The light emitting element is installed on the metal plate away from an end in contact with the separation portion ,
The insulating layer is a light emitting device having a function of reflecting light from the light emitting element . A substrate,
An insulating layer bonded onto the substrate;
A metal plate bonded on the insulating layer;
A light emitting element;
In a light emitting device comprising:
The metal plate has a spacing portion;
The light emitting element is installed on the metal plate away from an end in contact with the separation portion,
A light-emitting device in which a reflective layer is provided on the insulating layer in the separation portion. The distance from the edge in contact with the spaced portion to the light emitting element, the light emitting device according to claim 1 or 2 is greater than the width of the upper surface, or the same as the width of the upper surface of the light emitting elements of the light emitting element. The light emitting device, light emitting device according to claim 1 or 2 is installed on the bottom surface of the recess provided in the metal plate. Wherein the surface of the metal plate, the light emitting device according to claim 1 or 2 in the height direction and has a convex shape of 100 to 500 nm. The insulating layer or the reflective layer, the light emitting device according to any one of claims 1 to 5, which is formed of a thermoplastic resin. The insulating layer or the reflective layer, the light emitting device according to any one of claims 1 to 5, which is formed of synthetic fibers and / or natural fibers. The light emitting device according to claim 6 , wherein the thermoplastic resin is blended with an inorganic filler. The thermoplastic resin is polyolefin resin, polyester resin, polystyrene resin, poly-p-xylylene resin, polyvinyl acetate resin, polyacrylate resin, polymethacrylate resin, polyvinyl chloride. Resin, polyvinylidene chloride resin, fluorine resin, polyacrylonitrile resin, polyvinyl ether resin, polyvinyl ketone resin, polyether resin, polyamide resin, diene resin, polyurethane resin, polyacetal, aromatic polyamide, Polyphenylene, polyarylate, polyphenylene oxide, polyphenylene sulfide, polyether ether ketone, polysulfone, polyether sulfone, polyimide, polyamideimide, polyesterimide, polyetherimide, polyphenylene 'S imidazole, poly quinazoline dione, polybenzoxazinone, polyacene, poly imidazo pyro Ron, polyquinoline, Porinafuchirijin light emitting device according to claim 6 or 8 consisting polyquinoxaline or mixtures of at least two of them. The synthetic fiber is a polypropylene fiber, a polyethylene fiber, an acrylic fiber, a nylon fiber, a vinylon fiber, a composite fiber of polyethylene and polypropylene, a composite fiber of polyester and polyolefin, a synthetic polyolefin pulp, or a mixture thereof.
The light emitting device according to claim 7 , wherein the natural fiber is hardwood bleached kraft pulp, softwood bleached kraft pulp, groundwood pulp, thermomechanical pulp, kenaf, or a mixture thereof. The light emitting device according to claim 8 or 9 , wherein the inorganic filler is a metal salt, a metal hydroxide, or a metal oxide. The light emitting element is electrically connected to the metal plate with a bonding wire,
The periphery of the light emitting element on the upper surface of the metal plate is provided with a solder resist,
It said light emitting element and the bonding wire, the solder resist upper surface to a higher position, the light emitting device according to any one of claims 1 to 11, are covered with a sealing resin.

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