JP4873166B2 - Setter for glass substrate heat treatment - Google Patents

Setter for glass substrate heat treatment Download PDF

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JP4873166B2
JP4873166B2 JP2007108837A JP2007108837A JP4873166B2 JP 4873166 B2 JP4873166 B2 JP 4873166B2 JP 2007108837 A JP2007108837 A JP 2007108837A JP 2007108837 A JP2007108837 A JP 2007108837A JP 4873166 B2 JP4873166 B2 JP 4873166B2
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setter
glass substrate
heat treatment
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mounting surface
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JP2008266053A (en
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慎護 中根
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Nippon Electric Glass Co Ltd
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Description

本発明は、大型のガラス基板熱処理用セッターに関し、特にプラズマディスプレイパネル(以下、PDPと称す)等に使用される大型のガラス基板を、載置面に直接載置して加熱炉に導入するための平板状のガラス基板熱処理用セッターに関する。   The present invention relates to a setter for heat treatment of a large glass substrate, and in particular, for placing a large glass substrate used for a plasma display panel (hereinafter referred to as PDP) or the like directly on a placement surface and introducing it into a heating furnace. It relates to a setter for heat treatment of a flat glass substrate.

近年、表示デバイスの多様化が進む中で、CRTに替わって大画面の平面ディスプレイが表示デバイスの主流になりつつある。その代表格であるPDPは、前面と背面とに2枚のガラス基板を対向配置し、上下を両ガラス基板で、側方を隔壁で挟まれた100〜150μmのセルにHe、Ne等の希ガスを封じ込め電圧の印加によりガス放電させて文字や画像を表示するものであり、表示画面の大きさに比して薄型であることを特徴とする。例えば、表示画面が42インチのPDPモジュールは、縦520mm、横920mm、奥行50mm程度の矩形のパネルである。   In recent years, with the diversification of display devices, large screen flat displays are becoming the mainstream of display devices instead of CRTs. The typical PDP has two glass substrates facing each other on the front and back, both glass substrates on the top and bottom, and a 100-150 μm cell sandwiched between the sides. Characters and images are displayed by gas discharge by application of a gas containment voltage, and the display screen is thinner than the display screen. For example, a 42-inch PDP module having a display screen is a rectangular panel having a length of about 520 mm, a width of 920 mm, and a depth of about 50 mm.

PDP用ガラス基板には、一般に厚さ3mm弱の平板状のソーダライム系ガラスや高歪点ガラスが用いられ、このガラス基板の上に電極、誘電体、蛍光体等を形成するためにペーストが塗布される。塗布されたペーストをガラス基板に定着させるために、ガラス基板は熱処理用セッター上に載置され、ローラーハースキルン等の加熱炉において450〜650℃の温度域で熱処理が施される。   As a glass substrate for PDP, flat soda-lime glass or high strain point glass having a thickness of less than 3 mm is generally used, and a paste is used to form electrodes, dielectrics, phosphors, etc. on the glass substrate. Applied. In order to fix the applied paste to the glass substrate, the glass substrate is placed on a heat treatment setter and subjected to heat treatment in a temperature range of 450 to 650 ° C. in a heating furnace such as a roller hearth kiln.

このガラス基板熱処理用セッターとして、例えば、SiO2、Al23、Li2O、P25、TiO2、ZrO2を主成分とし、熱膨張係数が15×10-7/K以下の結晶化ガラスからなり、JIS R 3202で規定された単位長さあたりの反りの大きさの割合である平坦度が0.3%以下であり、かつ、載置面の表面粗さがRa値で0.1〜1μmの範囲にあるセッターが開示されている(例えば、特許文献1参照。)。また、別の熱処理用セッターとして、結晶相としてβ−スポジュメン固溶体を含有するLi2O−Al23−SiO2系結晶化ガラス板からなり、ガラス基板を載置する面の表面積が14000cm2以上であるセッターが開示されている(例えば、特許文献2参照。)。更に別の熱処理用セッターとして、表面の光沢度が5度以上であり、ペタライト(Li2O・Al23・8SiO2)系セラミックス、β−スポジュメン(Li2O・Al23・4SiO2)系セラミックス又はβ−ユークリプタイト(Li2O・Al23・2SiO2)系セラミックスからなるセッターが開示されている(例えば、特許文献3参照。)。
特開2002−114537号公報 特開2006−8487号公報 特開2005−180743号公報
As the setter for heat treatment of the glass substrate, for example, SiO 2 , Al 2 O 3 , Li 2 O, P 2 O 5 , TiO 2 , ZrO 2 are the main components, and the thermal expansion coefficient is 15 × 10 −7 / K or less. It is made of crystallized glass, the flatness, which is the ratio of the warp per unit length specified in JIS R 3202, is 0.3% or less, and the surface roughness of the mounting surface is Ra value. A setter in the range of 0.1 to 1 μm is disclosed (for example, see Patent Document 1). As another setter for heat treatment, it is composed of a Li 2 O—Al 2 O 3 —SiO 2 crystallized glass plate containing a β-spodumene solid solution as a crystal phase, and the surface area of the surface on which the glass substrate is placed has a surface area of 14000 cm 2. The setter which is the above is disclosed (for example, refer to Patent Document 2). As a further heat treatment for the setter, it is the gloss of the surface is 5 degrees or more, petalite (Li 2 O · Al 2 O 3 · 8SiO 2) ceramics, beta-spodumene (Li 2 O · Al 2 O 3 · 4SiO 2) ceramics or β- Yuktobanian descriptor setter made of tight (Li 2 O · Al 2 O 3 · 2SiO 2) ceramics have been disclosed (e.g., see Patent Document 3.).
JP 2002-114537 A JP 2006-8487 A JP 2005-180743 A

上記した特許文献1〜3に記載の熱処理用セッターは、ガラス基板の熱処理温度域で繰返し使用すると載置面が凸になるような反り変形が生じ、使用時間と共にその反り変形が大きくなる。この反り変形が大きくなると、ガラス基板がセッターの反り変形に倣って変形してしまう。更に、ローラーハースキルンで熱処理を行った場合、セッターをローラーで搬送する際に、セッターとローラーの接触面積が小さくなるため、正常に搬送されなくなるだけでなく、セッターがローラーに引っ掛かり、最悪の場合、ローラーやセッターが破損して焼成炉を停止しなければならなくなる事態に陥る虞があった。   When the setter for heat treatment described in Patent Documents 1 to 3 described above is repeatedly used in the heat treatment temperature range of the glass substrate, warpage deformation occurs such that the mounting surface becomes convex, and the warpage deformation increases with use time. When this warpage deformation becomes large, the glass substrate is deformed following the warpage deformation of the setter. Furthermore, when heat treatment is performed with a roller hearth kiln, when the setter is transported with a roller, the contact area between the setter and the roller is reduced, so that not only the transport is not performed properly, but the setter gets caught on the roller, which is the worst case. There was a risk that the roller or setter would break and the firing furnace had to be stopped.

本発明は上記事情に鑑みなされたものであって、ガラス基板の熱処理温度域で繰返し使用しても反り変形が発生しにくいガラス基板熱処理用セッターを提供することを目的とする。   The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a setter for glass substrate heat treatment that is unlikely to warp and deform even when used repeatedly in the heat treatment temperature range of the glass substrate.

本発明者は、セッターの反り変形の原因が、熱処理中に発生するガラス基板中のアルカリ成分のセッターへの拡散反応による体積増加であることを突き止めた。すなわち、PDP用ガラス基板は、通常Na2OやK2Oを合量で10〜15質量%程度含んでいるため、セッターの載置面に直接ガラス基板を載せて450〜650℃にした焼成炉で熱処理を行うと、ガラス基板中のNa+イオンやK+イオンが、ガラス基板と密着したセッターへ拡散する。そのため、セッターの載置面での結晶組成やマトリックスガラス相組成が変化し、体積増加が生じて反り変形を引き起こすことがわかった。 The present inventor has found that the cause of warping deformation of the setter is an increase in volume due to a diffusion reaction of an alkali component in the glass substrate generated during the heat treatment to the setter. That is, since the glass substrate for PDP usually contains about 10 to 15% by mass of Na 2 O or K 2 O in total, the glass substrate is directly placed on the setter mounting surface and fired at 450 to 650 ° C. When heat treatment is performed in the furnace, Na + ions and K + ions in the glass substrate diffuse to the setter in close contact with the glass substrate. For this reason, it was found that the crystal composition and the matrix glass phase composition on the setting surface of the setter were changed, causing an increase in volume and causing warping deformation.

本発明者等は、上記課題を解決するために鋭意研究した結果、ガラス基板熱処理用セッターの載置面に特定の深さ及び割合の凹部を形成することにより、反り変形が発生しにくくなることを見出し、本発明として提案するものである。   As a result of diligent research to solve the above problems, the present inventors have made it difficult for warp deformation to occur by forming concave portions with a specific depth and ratio on the mounting surface of the setter for heat treatment of a glass substrate. Are proposed as the present invention.

すなわち、本発明のガラス基板熱処理用セッターは、結晶化ガラス製であり、ガラス基板を載置面に載置して熱処理するためのガラス基板熱処理用セッターであって、載置面において深さ3μm以上かつ20μm以下の凹部が、平均して500μmあたり1つ以上の割合で存在することを特徴とする。セッターの載置面に形成された凹部により、イオンの移動による体積変化を吸収することが可能となり、反り変形が発生しにくくなる。セッター載置面上の凹部の深さ及び数は、例えば、触針式表面粗さ測定器を用いて測定することができる。具体的には、一定距離における深さ3μm以上かつ20μm以下の凹部の数を測定し、500μmあたりの数に換算することにより算出することができる。ここで、凹部の深さは、図1のセッター表面形状の測定曲線の模式図に示すように、測定曲線の平均線から凹部先端までの距離Dを指す。なお、後述するセッター表面付近における凹部の幅とは、測定曲線の平均線上における凹部の幅Wを指す。 That is, a glass substrate for heat treatment setter of the present invention, the crystallization glass manufactured der is, a glass substrate for heat treatment setters for thermal treatment by placing the mounting surface of the glass substrate, the depth in the mounting surface 3 μm or more and 20 μm or less of recesses are present on average at a rate of 1 or more per 500 μm. The recess formed on the mounting surface of the setter can absorb the volume change due to the movement of ions, and warpage deformation is less likely to occur. The depth and number of the recesses on the setter mounting surface can be measured using, for example, a stylus type surface roughness measuring instrument. Specifically, it can be calculated by measuring the number of recesses having a depth of 3 μm or more and 20 μm or less at a constant distance, and converting the number to the number per 500 μm. Here, the depth of the concave portion indicates a distance D from the average line of the measurement curve to the tip of the concave portion as shown in the schematic diagram of the measurement curve of the setter surface shape in FIG. In addition, the width | variety of the recessed part in the vicinity of the setter surface mentioned later refers to the width W of the recessed part on the average line of a measurement curve.

第二に、本発明のガラス基板熱処理用セッターは、載置面の平均表面粗さが0.1μm〜2μmであることを特徴とする。特定の平均表面粗さを有することにより、ガラス基板を載置する際に、エアクッション作用によるガラス基板の滑りを防止し、安定して載置することが可能となる。なお平均表面粗さは、JIS B 0601に規定された算術平均粗さに準じて算出される。   2ndly, the setter for heat processing of the glass substrate of this invention is characterized by the average surface roughness of a mounting surface being 0.1 micrometer-2 micrometers. By having a specific average surface roughness, it is possible to prevent the glass substrate from slipping due to the air cushion action and place the glass substrate stably. The average surface roughness is calculated according to the arithmetic average roughness specified in JIS B 0601.

第三に、本発明のガラス基板熱処理用セッターは、結晶化ガラスが、結晶相としてβ−石英固溶体又はβ−スポジュメン固溶体を含有するLiO−Al−SiO系結晶化ガラスであることを特徴とする。 Third, the setter for heat treatment of a glass substrate according to the present invention is a Li 2 O—Al 2 O 3 —SiO 2 based crystallized glass in which the crystallized glass contains β-quartz solid solution or β-spodumene solid solution as a crystal phase. characterized in that there.

第四に、本発明のガラス基板熱処理用セッターは、結晶化ガラスがLiOを1〜8質量%含有することを特徴とする。 Fourth, the glass substrate for heat treatment setter of the present invention is characterized in that the crystallization glass contains 1-8 wt% of Li 2 O.

第五に、本発明のガラス基板熱処理用セッターは、ガラス基板が、高歪点ガラスであり、Na2OとK2Oを合量で5〜30質量%含有するガラスからなることを特徴とする。 Fifth, the setter for heat treatment of a glass substrate according to the present invention is characterized in that the glass substrate is a high strain point glass and is made of a glass containing 5 to 30% by mass of Na 2 O and K 2 O in a total amount. To do.

第六に、本発明のガラス基板熱処理用セッターは、載置面の面積が8500cm2以上であることを特徴とする。 Sixth, the setter for heat treatment of a glass substrate of the present invention is characterized in that the area of the mounting surface is 8500 cm 2 or more.

本発明のガラス基板熱処理用セッターは、載置面において特定の深さ及び割合の凹部を形成することにより、ガラス基板中のNa+イオンやK+イオンが、ガラス基板と密着したセッターへ拡散することに起因する体積変化を吸収することができる。また、セッター表面に凹部を形成することにより、ガラス基板とセッターとの接触面積が小さくなり、イオンのセッターへ拡散を低減することができる。その結果、繰り返し焼成に使用することによる反り変形が発生し難くなる。 The setter for heat treatment of a glass substrate according to the present invention forms Na + ions and K + ions in the glass substrate by diffusing into the setter in close contact with the glass substrate by forming a recess having a specific depth and ratio on the mounting surface. It is possible to absorb the volume change caused by this. Further, by forming the recess on the setter surface, the contact area between the glass substrate and the setter is reduced, and diffusion of ions to the setter can be reduced. As a result, warpage deformation due to repeated use is unlikely to occur.

本発明のガラス基板熱処理用セッターは、結晶化ガラス製であり、載置面において深さ3μm以上かつ20μm以下の凹部が、平均して500μmあたり1つ以上の割合で存在することを特徴とする。 A glass substrate for heat treatment setter of the present invention, characterized in that Ri crystallized glass made der, the depth 3μm or more and 20μm or less of the recess in the mounting surface, present in a proportion more than one per 500μm average of And

前述したように、ガラス基板からセッターへのNa+イオンやK+イオンが拡散すると、セッター中のガラス相や結晶相が変質し、体積変化を生じる。この変質による体積変化を吸収できる凹部があれば、拡散して変質したとしてもセッターは反り変形が起こり難くなる。本発明のガラス基板熱処理用セッターは、表面に体積変化を吸収する凹部が形成されているため、Na+イオンやK+イオンの拡散による体積変化が生じても、該体積変化が凹部に吸収されるため、ガラス基板の熱処理温度域で繰返し使用しても反り変形が発生しにくくなる。 As described above, when Na + ions or K + ions diffuse from the glass substrate to the setter, the glass phase or crystal phase in the setter is altered, resulting in a volume change. If there is a recess capable of absorbing the volume change due to this alteration, the setter will not easily warp and deform even if it is diffused and altered. Since the setter for heat treatment of a glass substrate of the present invention has a recess that absorbs a volume change on the surface, even if a volume change occurs due to diffusion of Na + ions or K + ions, the volume change is absorbed by the recess. For this reason, even if the glass substrate is repeatedly used in the heat treatment temperature region, warpage deformation is unlikely to occur.

セッター表面に形成される凹部は、できるだけ均等に分散して存在した方が、該体積変化をセッター全体として吸収することができ、長時間加熱した場合も反り変形し難くなる。具体的には、セッターの載置面において、深さ3μm以上の凹部が、平均して500μmあたり1個以上の割合で存在する必要があり、平均して500μmあたり2個以上の割合で存在することが好ましく、平均して500μmあたり5個以上の割合で存在することが好ましい。上限は特に限定されないが、基板ガラスへのセッター形状の転写しやすくなるため、平均して500μmあたり20個以下とすることが好ましい。   When the concave portions formed on the setter surface are present as evenly dispersed as possible, the volume change can be absorbed by the entire setter, and even when heated for a long time, it is difficult to warp and deform. Specifically, on the setting surface of the setter, it is necessary that the recesses having a depth of 3 μm or more exist on average at a rate of 1 or more per 500 μm, and on the average, exist at a rate of 2 or more per 500 μm. It is preferable that the average amount is 5 or more per 500 μm. Although an upper limit is not specifically limited, Since it becomes easy to transfer the setter shape to substrate glass, it is preferable that it is 20 or less per 500 micrometers on average.

なお、長時間加熱した場合におけるセッターの体積変化を十分に吸収し、反り変形を抑制する点から、凹部の深さは3μm以上とする必要があり、3.5μm以上であることが好ましく、4μm以上であることが好ましい。上限は、熱処理中にガラス基板が軟化し、セッター表面の凹部の形状がそのまま転写される虞があるため、20μm以下とすることが好ましい。 It should be noted that the depth of the concave portion needs to be 3 μm or more, preferably 3.5 μm or more, from the viewpoint of sufficiently absorbing the volume change of the setter when heated for a long time and suppressing warpage deformation. The above is preferable. The upper limit is preferably 20 μm or less because the glass substrate softens during heat treatment and the shape of the recesses on the setter surface may be transferred as it is.

凹部の形状については特に限定されず、深さが3μm以上かつ20μm以下であれば、セッターの体積変化の吸収に寄与できるため、溝状、孔状などのどのような形状のものであっても構わない。特に、体積変化の吸収の効果が大きく、またセッター表面に形成することが容易である点で、溝状であることが好ましい。 The shape of the concave portion is not particularly limited, and if the depth is 3 μm or more and 20 μm or less , it can contribute to the absorption of the volume change of the setter, so any shape such as a groove shape or a hole shape can be used. I do not care. In particular, the groove shape is preferable in that the effect of absorbing the volume change is large and it is easy to form on the setter surface.

セッター表面に凹部として溝を形成する場合は、その長さは特に限定されないが、幅については、大きいほどK拡散による体積増加を吸収する効果が大きくなり好ましい。例えば、研磨砥粒による研磨でセッター表面に溝を形成する場合、表面付近から深さ方向にいくに従い幅は小さくなるが、表面付近での溝の幅は、10μm以上であることが好ましく、15μm以上であることがより好ましく、20μm以上であることが更に好ましい。ただし、溝の幅が大きすぎると、熱処理中におけるガラス基板の軟化により、セッター表面の溝の形状がそのまま転写される虞があるため、100μm以下とすることが好ましい。   When a groove is formed as a recess on the setter surface, the length is not particularly limited, but the larger the width, the greater the effect of absorbing the volume increase due to K diffusion, which is preferable. For example, when a groove is formed on the setter surface by polishing with abrasive grains, the width decreases from the surface to the depth direction, but the groove width near the surface is preferably 10 μm or more, and 15 μm. More preferably, it is more preferably 20 μm or more. However, if the width of the groove is too large, the shape of the groove on the setter surface may be transferred as it is due to the softening of the glass substrate during the heat treatment.

セッター表面に凹部を形成する方法は特に限定されないが、例えば、研磨機を用いた研磨、具体的には、所定の番手の研磨砥粒を用いて研磨機でラッピングする方法などが挙げられる。   The method for forming the recesses on the setter surface is not particularly limited, and examples thereof include polishing using a polishing machine, specifically, a method of lapping with a polishing machine using a predetermined number of abrasive grains.

なお、結晶化ガラスからなるセッターは、比較的、強度に優れ破損しにくいため長寿命であり、更に熱伝導率が高く均熱効果が大きいなどの特徴があるが、セラミックス焼結体からなるセッターよりも緻密であることから、前述したようなNa+イオンやK+イオンの拡散による体積変化による影響を受けやすい。したがって、セッターとして結晶化ガラスを用いた場合には、セッター表面に凹部を形成することにより得られる本願発明の効果が大きいものとなる。 A setter made of crystallized glass has a long life because it is relatively excellent in strength and is not easily damaged, and has a feature such as a high thermal conductivity and a large soaking effect. Since it is denser, it is more susceptible to volume changes due to the diffusion of Na + ions and K + ions as described above. Therefore, when crystallized glass is used as the setter, the effect of the present invention obtained by forming a recess on the setter surface is significant.

セッターの表面粗さについて、JIS B 0601に規定された算術平均粗さは0.1〜2μmであることが好ましく、0.2〜1.5μmであることがより好ましい。セッターの表面粗さが0.1μmより小さいとガラス基板を載置する際に、ガラス基板の表面とセッターの載置面との間に隙間がほとんど無く、エアクッション作用が生じてガラス基板がセッター上を滑って所定位置に安定して載置することが困難となりやすい。一方、セッターの表面粗さが2μm以上である場合、熱処理中にガラス基板が軟化し、セッター表面の凹凸形状がそのまま転写される虞がある。   Regarding the surface roughness of the setter, the arithmetic average roughness defined in JIS B 0601 is preferably 0.1 to 2 μm, and more preferably 0.2 to 1.5 μm. If the surface roughness of the setter is less than 0.1 μm, there is almost no gap between the surface of the glass substrate and the setting surface of the setter when the glass substrate is placed, and an air cushion action is generated and the glass substrate is setter. It is likely to be difficult to slide stably on the predetermined position. On the other hand, when the surface roughness of the setter is 2 μm or more, the glass substrate is softened during the heat treatment, and the uneven shape of the setter surface may be transferred as it is.

上記した構成において、結晶化ガラスとしては、結晶相としてβ−石英固溶体又はβ−スポジュメン固溶体を含有するLiO−Al−SiO系結晶化ガラスが挙げられる。この結晶化ガラスを用いた場合、セッター中に含まれるLiイオンとガラス基板中のNaイオンやKイオンとのイオン交換反応により、ガラス基板からセッター中へのNaイオンやKイオンの拡散が増大するため、より一層反り変形が大きくなる。この場合、セッター表面に凹部を形成することにより得られる本願発明の効果が大きいものとなる。 In the above-described configuration, the crystallized glass includes Li 2 O—Al 2 O 3 —SiO 2 based crystallized glass containing β-quartz solid solution or β-spodumene solid solution as a crystal phase . When using the crystallization glass, by ion exchange reaction between Na + ions and K + ions of Li + ions and the glass in the substrate contained in the setter, from the glass substrate into the setter Na + ions and K + Since the diffusion of ions increases, warpage deformation is further increased. In this case, the effect of this invention obtained by forming a recessed part in the setter surface will become a big thing.

上記した構成において、結晶化ガラスがLiOを1〜8質量%含有することが好ましい。LiO含有量は、ガラス基板の熱処理過程におけるイオン交換反応を抑制するために、少なければ少ないほど良く、具体的には8質量%以下であることが好ましいが、急加熱・急冷却による破損がないようにするために、LiO−Al−SiO系の低膨張結晶又は負膨張結晶を多く析出させ、セッターの熱膨張係数を概ね25×10−7/K以下とする必要があることから、LiOの含有量は1質量%以上とすることが好ましい。 In the above configuration, it is preferable that the crystallization glass contains 1-8 wt% of Li 2 O. The Li 2 O content is preferably as small as possible in order to suppress the ion exchange reaction in the heat treatment process of the glass substrate. Specifically, the Li 2 O content is preferably 8% by mass or less, but is damaged by rapid heating / cooling. In order to prevent the occurrence of slag, a large amount of Li 2 O—Al 2 O 3 —SiO 2 low expansion crystal or negative expansion crystal is precipitated, and the thermal expansion coefficient of the setter is approximately 25 × 10 −7 / K or less. Since it is necessary, the content of Li 2 O is preferably 1% by mass or more.

また、熱処理するガラス基板が、PDP用ガラス基板であり、Na2OとK2Oを合量で5質量%以上含有するガラスからなる場合、特にイオン交換による体積変化に伴い、反り変形が生じやすくなる。従って、該ガラス基板の熱処理用として用いる場合は、本発明におけるガラス基板熱処理用セッターの反り変形を抑制する効果が大きいものとなる。なお、PDP用ガラス基板のNa2OとK2Oは、それらの含有量が多すぎると歪点が低くなりすぎるため、合量で最大でも30質量%に制限される。また、ガラス基板の肉厚が2mm以下の場合にも、熱処理時のセッターの変形に倣って、ガラス基板の反り変形がより発生しやすいため、本発明の効果が一層大きくなる。 In addition, when the glass substrate to be heat-treated is a glass substrate for PDP and is made of glass containing Na 2 O and K 2 O in a total amount of 5% by mass or more, warp deformation occurs particularly with a volume change due to ion exchange. It becomes easy. Therefore, when it uses for the heat processing of this glass substrate, the effect which suppresses the curvature deformation of the setter for glass substrate heat processing in this invention becomes a big thing. Incidentally, Na 2 O and K 2 O of the glass substrate for PDP, since the strain point when the content thereof is too large, too low, being limited to 30 weight% at the maximum in total. In addition, even when the thickness of the glass substrate is 2 mm or less, the warp deformation of the glass substrate is more likely to occur following the deformation of the setter during the heat treatment, so that the effect of the present invention is further enhanced.

セッター載置面の面積が8500cm2以上、更には12000cm2以上であるような大型のセッターの場合、特に反り変形が大きくなるため、セッター表面に凹部を形成することにより得られる本発明の効果が大きい。 In the case of a large setter in which the area of the setter mounting surface is 8500 cm 2 or more, and further 12000 cm 2 or more, since warpage deformation is particularly large, the effect of the present invention obtained by forming a recess on the setter surface can be obtained. large.

セッターの厚さは特に限定されないが、2〜10mmであることが好ましい。セッターの厚さが2mm未満であると加熱による反りが発生しやすく、また強度も不十分となる傾向がある。一方、セッターの厚さが10mmを超えると取り扱いが困難になったり、セッター熱容量が大きくなることによる熱処理炉使用電力量が上昇する傾向がある。   Although the thickness of a setter is not specifically limited, It is preferable that it is 2-10 mm. If the setter thickness is less than 2 mm, warping due to heating tends to occur, and the strength tends to be insufficient. On the other hand, when the thickness of the setter exceeds 10 mm, handling tends to be difficult or the amount of power used in the heat treatment furnace due to an increase in the heat capacity of the setter tends to increase.

以下に、本発明のガラス基板熱処理用セッターを実施例に基づいて詳細に説明するが、本発明はかかる実施例に限定されるものではない。   Although the setter for glass substrate heat processing of this invention is demonstrated in detail below based on an Example, this invention is not limited to this Example.

セッター用の結晶化ガラスとしては、透明結晶化ガラス(日本電気硝子株式会社製、ネオセラムN−0(LiOの含有量:4質量%))を用い、セラミックス焼結体としては、ペタライト結晶を70質量%含有するLiO−Al−SiO系セラミックス焼結体(LiO含有量:6質量%)を用いた。この結晶化ガラス及びセラミックス焼結体の表面をダイヤモンドジェネレーターにより研削した後、実施例1及び参考例1では、1重量%の#400研磨砥粒を混ぜた#600研磨砥粒を用いて研磨機でラッピング、実施例2及び参考例2では、10重量%の#400の研磨砥粒を混ぜた#600研磨砥粒を用いて研磨機でラッピング、比較例1及び2では、#1000研磨砥粒を用いて研磨機でそれぞれラッピングすることにより表面加工し、溝状の凹部を形成した。 As crystallized glass for setter, transparent crystallized glass (manufactured by Nippon Electric Glass Co., Ltd., Neoceram N-0 (Li 2 O content: 4% by mass)) is used, and as the ceramic sintered body, petalite crystal Li 2 O—Al 2 O 3 —SiO 2 ceramic sintered body (Li 2 O content: 6% by mass) containing 70% by mass. After the surfaces of the crystallized glass and ceramic sintered body were ground by a diamond generator, in Example 1 and Reference Example 1 , a polishing machine was used using # 600 polishing abrasive grains mixed with 1 wt% # 400 polishing abrasive grains. In Example 2 and Reference Example 2 , lapping is performed with a polishing machine using # 600 abrasive grains mixed with 10% by weight of # 400 abrasive grains. In Comparative Examples 1 and 2, # 1000 abrasive grains are used. The surface was processed by lapping each using a polishing machine to form groove-like recesses.

得られたセッター表面に形成された凹部の深さ及び数は、東京精密社製サーフコム756Aを用いて、0.3mm/sの駆動速度で1500μm測定し、検出された深さ3μm以上の凹部を500μmあたりの数に換算して求めた。なお、測定はセッター表面の中央部、及び中央部と四隅の中点付近4箇所の計5箇所で行い、その平均値として算出した。   The depth and number of the recesses formed on the surface of the setter were measured by using a Surfcom 756A manufactured by Tokyo Seimitsu Co., Ltd. at a driving speed of 0.3 mm / s, 1500 μm, and the detected recesses having a depth of 3 μm or more were measured. It calculated | required converted into the number per 500 micrometers. In addition, the measurement was performed at a central part of the setter surface and at a total of five places in the central part and four places near the midpoints of the four corners, and the average value was calculated.

セッターの反り変形は、1250×700×5mm(載置面の面積:8750cm2)のサイズのセッターの載置面の略中央部に、1000×560×2.8mmのサイズのPDP用高歪点ガラス(日本電気硝子株式会社製、PP−8;Na2O:5質量%、K2O:10質量%含有)を載置し、600℃で2週間加熱した後、セッターの載置面形状を、3次元形状測定装置を用いて測定し、最高部と最低部との高低差で評価した。結果を表1に示す。 The warp deformation of the setter is a high strain point for PDP having a size of 1000 × 560 × 2.8 mm at the substantially central portion of the setting surface of the setter having a size of 1250 × 700 × 5 mm (mounting surface area: 8750 cm 2 ). Glass (manufactured by Nippon Electric Glass Co., Ltd., PP-8; containing Na 2 O: 5 mass%, K 2 O: 10 mass%) was heated at 600 ° C. for 2 weeks, and then the setting surface shape of the setter Was measured using a three-dimensional shape measuring apparatus, and evaluated by the difference in height between the highest part and the lowest part. The results are shown in Table 1.

エアクッション作用によるガラス基板の滑りについて、前記と同じ1250×700×5mmのセッターの載置面の略中央部に、10cm上方から前記と同じ1000×560×2.8mmのPDP用高歪点ガラスを載せ、エアクッション作用によるガラス基板の動きについて調べた。エアクッション作用により、ガラス基板がセッターからはみださなかった場合は○、ガラス基板の角の一部でもセッターからはみだした場合は×とした。結果を表1に示す。   About slip of the glass substrate due to the air cushion action, the same high-strain-point glass for PDP of 1000 × 560 × 2.8 mm as above from 10 cm above the center of the mounting surface of the same 1250 × 700 × 5 mm setter as above. The movement of the glass substrate due to the air cushion action was examined. When the glass substrate did not protrude from the setter due to the air cushion action, it was indicated as ◯, and when even a part of the corner of the glass substrate protruded from the setter, it was indicated as x. The results are shown in Table 1.

表1からわかるように、実施例1、2及び参考例1、2のガラス基板熱処理用セッターは、いずれも反り変形が発生せず、比較例1及び2では反り変形が発生した。また、実施例1、2及び参考例1、2では、エアクッション作用によるガラス基板の滑りの問題は発生しなかったが、比較例1及び2では、エアクッション作用によりガラス基板が滑って移動し、セッターからはみだした。
As can be seen from Table 1, the glass substrate heat treatment setters of Examples 1 and 2 and Reference Examples 1 and 2 did not warp, and in Comparative Examples 1 and 2, warp deformation occurred. Further, in Examples 1 and 2 and Reference Examples 1 and 2 , the problem of slipping of the glass substrate due to the air cushion action did not occur, but in Comparative Examples 1 and 2, the glass substrate slipped and moved due to the air cushion action. , Protruded from the setter.

以上説明したように、本発明のガラス基板熱処理用セッターは、PDPだけでなく、液晶ディスプレイ、FED等のフラットパネルディスプレイに使用されるガラス基板の熱処理用セッターとして好適である。   As described above, the setter for heat treatment of a glass substrate of the present invention is suitable as a setter for heat treatment of a glass substrate used for flat panel displays such as liquid crystal displays and FEDs as well as PDPs.

触針式表面粗さ測定器を用いて測定したセッター表面における測定曲線の模式図である。It is a schematic diagram of the measurement curve in the setter surface measured using the stylus type surface roughness measuring device.

符号の説明Explanation of symbols

D 凹部の深さ
W セッター表面付近における凹部の幅
D Depth of recess W Width of recess near the setter surface

Claims (7)

結晶化ガラス製であり、ガラス基板を載置面に載置して熱処理するためのガラス基板熱処理用セッターであって、載置面において深さ3μm以上かつ20μm以下の凹部が、平均して500μmあたり1つ以上の割合で存在することを特徴とするガラス基板熱処理用セッター。 Crystallization glass manufactured der is, a glass substrate for heat treatment setters for thermal treatment by placing the mounting surface of the glass substrate, the depth 3μm or more and 20μm or less of the recess in the mounting surface, and the average A setter for heat-treating a glass substrate, wherein the setter is present at a rate of 1 or more per 500 μm. 載置面の平均表面粗さが0.1〜2μmであることを特徴とする請求項1に記載のガラス基板熱処理用セッター。   The setter for heat treatment of a glass substrate according to claim 1, wherein an average surface roughness of the mounting surface is 0.1 to 2 μm. 結晶化ガラスが、結晶相としてβ−石英固溶体又はβ−スポジュメン固溶体を含有するLiO−Al−SiO系結晶化ガラスであることを特徴とする請求項1又は2に記載のガラス基板熱処理用セッター。 3. The crystallized glass is Li 2 O—Al 2 O 3 —SiO 2 based crystallized glass containing β-quartz solid solution or β-spodumene solid solution as a crystal phase. Setter for heat treatment of glass substrate. 結晶化ガラスが、LiOを1〜8質量%含有することを特徴とする請求項1〜3のいずれかに記載のガラス基板熱処理用セッター。 Crystallization glass is a glass substrate for heat treatment setter according to any one of claims 1 to 3, characterized in that it contains 1-8 wt% of Li 2 O. ガラス基板が、高歪点ガラスであり、NaOとKOを合量で5〜30質量%含有するガラスからなることを特徴とする請求項1〜4のいずれかに記載のガラス基板熱処理用セッター。 Glass substrate, a high strain point glass, a glass substrate according to any one of claims 1 to 4, characterized in that it consists of glass containing 5 to 30 mass% of Na 2 O and K 2 O in total Setter for heat treatment. ガラス基板が、プラズマディスプレイパネル用ガラス基板であることを特徴とする請求項1〜5のいずれかに記載のガラス基板熱処理用セッター。The glass substrate heat treatment setter according to any one of claims 1 to 5, wherein the glass substrate is a glass substrate for a plasma display panel. 載置面の面積が8500cm以上であることを特徴とする請求項1〜のいずれかに記載のガラス基板熱処理用セッター。 The setter for heat treatment of a glass substrate according to any one of claims 1 to 6 , wherein an area of the mounting surface is 8500 cm 2 or more.
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