JP4811233B2 - Electronic component package - Google Patents

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JP4811233B2
JP4811233B2 JP2006280053A JP2006280053A JP4811233B2 JP 4811233 B2 JP4811233 B2 JP 4811233B2 JP 2006280053 A JP2006280053 A JP 2006280053A JP 2006280053 A JP2006280053 A JP 2006280053A JP 4811233 B2 JP4811233 B2 JP 4811233B2
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component
substrate
electronic component
component substrate
mold resin
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JP2007259410A (en
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敦 鷹野
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Description

本発明は表面弾性波素子をモールド樹脂で覆った電子部品パッケージに関するものである。   The present invention relates to an electronic component package in which a surface acoustic wave element is covered with a mold resin.

図13は電子部品としてSAW(表面弾性波)フィルタ1を挙げ、従来の電子部品パッケージを示したものである。   FIG. 13 shows a SAW (surface acoustic wave) filter 1 as an electronic component, and shows a conventional electronic component package.

このように、従来の電子部品パッケージは、部品基板2と、部品基板2の下面に配置した表面弾性波素子としてのIDT電極3と、部品基板2の下方を覆う部品カバー4とを備え、IDT電極3と部品カバー4との間には、弾性波の振動空間を気密状態で保持するためのキャビティ5が形成されている。   As described above, the conventional electronic component package includes the component substrate 2, the IDT electrode 3 as a surface acoustic wave element disposed on the lower surface of the component substrate 2, and the component cover 4 that covers the lower portion of the component substrate 2. A cavity 5 is formed between the electrode 3 and the component cover 4 for holding the vibration space of the elastic wave in an airtight state.

なお、この出願の発明に関連する先行技術文献情報としては、例えば特許文献1が知られている。
特開平1−209811号公報
For example, Patent Document 1 is known as prior art document information related to the invention of this application.
JP-A-1-209811

近年、前述のような従来の電子部品パッケージでは、部品基板2の表面を伝搬しない不要波(以下バルク波という)により、周波数特性が劣化するという問題が発生している。   In recent years, in the conventional electronic component package as described above, there has been a problem that frequency characteristics deteriorate due to unnecessary waves (hereinafter referred to as bulk waves) that do not propagate on the surface of the component substrate 2.

これは主に、IDT電極3が設けられた部品基板2とその周囲部分における音響インピーダンスの差が大きいことに起因している。   This is mainly due to the large difference in acoustic impedance between the component substrate 2 on which the IDT electrode 3 is provided and its peripheral portion.

すなわち、入力側のIDT電極3aからは表面弾性波以外にも、部品基板2の中を伝搬するバルク波も放出され、このバルク波は部品基板2の側面で反射し出力トランスデューサへ到達することで、このバルク波も出力側のIDT電極3bで検出されてしまい、SAWフィルタ1の周波数特性が劣化してしまう。   That is, the IDT electrode 3a on the input side emits not only the surface acoustic wave but also a bulk wave propagating through the component substrate 2, and this bulk wave is reflected by the side surface of the component substrate 2 and reaches the output transducer. This bulk wave is also detected by the IDT electrode 3b on the output side, and the frequency characteristics of the SAW filter 1 are deteriorated.

そして、部品基板2の側面におけるバルク波の反射は、部品基板2とこの部品基板2の周囲部分(この図13においては空気となる)とで弾性率が著しく異なり、これに比例して部品基板2から外気に至る音響インピーダンスの差が大きくなりその分反射が大きくなるからである。   The reflection of the bulk wave on the side surface of the component substrate 2 is remarkably different in elasticity between the component substrate 2 and the peripheral portion of the component substrate 2 (air in FIG. 13), and the component substrate is proportional to this. This is because the difference in acoustic impedance from 2 to the outside air increases and the reflection increases accordingly.

そして特に近年、電子部品の小型化が進み、IDT電極3と部品基板2の側面との距離が短くなっていることから、バルク波により周波数特性が劣化する問題が顕在化しているのである。   In particular, in recent years, electronic components have been miniaturized, and the distance between the IDT electrode 3 and the side surface of the component substrate 2 has been shortened. Thus, the problem that the frequency characteristics are deteriorated due to bulk waves has become apparent.

そこで本発明は、バルク波による周波数特性の劣化を低減し、電子部品の周波数特性を向上させることを目的とする。   Therefore, an object of the present invention is to reduce the deterioration of frequency characteristics due to bulk waves and improve the frequency characteristics of electronic components.

そして、この目的を達成するために本発明は、実装基板上に配置された外部電極を介して実装された電子部品をモールド樹脂で被覆した電子部品パッケージにおいて、電子部品は、圧電体からなる部品基板の下面に配置したIDT電極を部品カバーで覆った構造であり、部品基板の上面とモールド樹脂との間に弾性率が部品基板より小さく且つモールド樹脂より大きい中間弾性層を設けた構造としたのである。 In order to achieve this object, the present invention provides an electronic component package in which an electronic component mounted via an external electrode disposed on a mounting substrate is covered with a mold resin. The electronic component is a component made of a piezoelectric body. The IDT electrode disposed on the lower surface of the substrate is covered with a component cover, and an intermediate elastic layer having an elastic modulus smaller than that of the component substrate and larger than that of the mold resin is provided between the upper surface of the component substrate and the mold resin. It is.

このような構成によれば、電子部品の内部から外側に向かって、部品基板、中間弾性層、モールド樹脂の順に弾性率が小さく(軟らかく)なり、この順に滑らかにバルク波の音響インピーダンスを推移させることができる。したがって、部品基板の側面に到達したバルク波を、部品基板から中間弾性層へ、また中間弾性層からモールド樹脂へとスムーズに伝搬させることができ、その結果として、部品基板内部のバルク波を低減し、電子部品の周波数特性を向上させることができるのである。   According to such a configuration, the elastic modulus decreases (soft) in the order of the component substrate, the intermediate elastic layer, and the mold resin from the inside to the outside of the electronic component, and the acoustic impedance of the bulk wave is smoothly changed in this order. be able to. Therefore, the bulk wave that reaches the side surface of the component board can be smoothly propagated from the component board to the intermediate elastic layer, and from the intermediate elastic layer to the mold resin. As a result, the bulk wave inside the component board is reduced. In addition, the frequency characteristics of the electronic component can be improved.

(実施の形態1)
実施の形態1の電子部品パッケージについて、電子部品としてアンテナ共用器用弾性波装置(以下SAWデュプレクサ6という。)を例に挙げて説明する。
(Embodiment 1)
The electronic component package of the first embodiment will be described by taking an elastic wave device for an antenna duplexer (hereinafter referred to as SAW duplexer 6) as an example of the electronic component.

図1に示すように、このSAWデュプレクサ6は、部品基板7と、この部品基板7の下面に配置した共振素子となるIDT電極8と、部品基板7の下方を覆う部品カバー9とを備えている。そして、この部品カバー9の上面のIDT電極8に対向する部分には、凹部10を有している。なお、この凹部10は、IDT電極8間を伝播する表面弾性波の振動空間となるキャビティ11を形成するものである。また、部品基板7の側面は加工変質層12でありこの部品基板7の上面には保護体13を配置している。なお、加工変質層12とは、図2の拡大図に示すように、部品基板7の表面が切断時の機械的エネルギーを受け、塑性変形して生じた凹凸部分を言う。   As shown in FIG. 1, the SAW duplexer 6 includes a component substrate 7, an IDT electrode 8 serving as a resonance element disposed on the lower surface of the component substrate 7, and a component cover 9 that covers the lower portion of the component substrate 7. Yes. A concave portion 10 is provided in a portion of the upper surface of the component cover 9 facing the IDT electrode 8. In addition, this recessed part 10 forms the cavity 11 used as the vibration space of the surface acoustic wave which propagates between the IDT electrodes 8. FIG. Further, the side surface of the component substrate 7 is a work-affected layer 12, and a protective body 13 is disposed on the upper surface of the component substrate 7. As shown in the enlarged view of FIG. 2, the work-affected layer 12 refers to a concavo-convex portion generated by plastic deformation of the surface of the component substrate 7 that receives mechanical energy during cutting.

さらに、このSAWデュプレクサ6は、実装基板14上の外部電極15を介して実装基板14上に実装され、この実装基板14上においてモールド樹脂16で被覆することで電子部品パッケージを形成している。   Further, the SAW duplexer 6 is mounted on the mounting substrate 14 via the external electrode 15 on the mounting substrate 14, and an electronic component package is formed by covering the mounting substrate 14 with a mold resin 16.

そして上記モールド樹脂16および保護体13としてはSiO 2 のフィラを含有するエポキシ樹脂を用いた。 As the mold resin 16 and the protector 13, an epoxy resin containing a SiO 2 filler was used.

また、本実施の形態では、部品基板7はLiTaO3を用いて形成し、部品カバー9はシリコン、IDT電極8はアルミニウムで形成した。 In the present embodiment, the component substrate 7 is formed using LiTaO 3 , the component cover 9 is formed of silicon, and the IDT electrode 8 is formed of aluminum.

その他、部品基板7の材料としてLiNbO3などの圧電体が挙げられ、またIDT電極8の材料として他の金属材料を用いてもよい。 In addition, a piezoelectric material such as LiNbO 3 may be used as the material for the component substrate 7, and other metal materials may be used as the material for the IDT electrode 8.

そして、この電子部品パッケージにおいては加工変質層12及び保護体13の弾性率が部品基板7の弾性率より小さく且つモールド樹脂16の弾性率より大きい中間弾性層17を構成しており、部品基板7とモールド樹脂16との間にこの中間弾性層17を介在させることで、バルク波による周波数特性の劣化を低減し、電子部品の周波数特性を向上させることができるのである。   In this electronic component package, an intermediate elastic layer 17 in which the elastic modulus of the work-affected layer 12 and the protective body 13 is smaller than the elastic modulus of the component substrate 7 and larger than the elastic modulus of the mold resin 16 is formed. By interposing this intermediate elastic layer 17 between the resin and the mold resin 16, it is possible to reduce the deterioration of the frequency characteristic due to the bulk wave and improve the frequency characteristic of the electronic component.

すなわち、部品基板7とモールド樹脂16の間に中間弾性層17を介在させることにより、部品基板7からモールド樹脂16に至るバルク波の放出経路における弾性率の変移が順に小さくなるというように、部品基板7からモールド樹脂16にかけて弾性率がなめらかに変移するようになる。   That is, by interposing the intermediate elastic layer 17 between the component substrate 7 and the mold resin 16, the change in elastic modulus in the bulk wave emission path from the component substrate 7 to the mold resin 16 is sequentially reduced. The elastic modulus changes smoothly from the substrate 7 to the mold resin 16.

そして、この弾性率の変移にともない音響インピーダンスも部品基板7からモールド樹脂16の順に滑らかにバルク波の音響インピーダンスを変移させることができ、結果として、部品基板7の側面に到達したバルク波を、部品基板7から中間弾性層17へ、さらには中間弾性層17からモールド樹脂16へと、電子部品の外側へスムーズに伝搬させることができ、バルク波による周波数特性の劣化を低減し、電子部品の周波数特性を向上させることができるからである。   As the elastic modulus changes, the acoustic impedance of the bulk wave can be changed smoothly in the order from the component substrate 7 to the mold resin 16, and as a result, the bulk wave reaching the side surface of the component substrate 7 is From the component substrate 7 to the intermediate elastic layer 17, and further from the intermediate elastic layer 17 to the mold resin 16, it can be smoothly propagated to the outside of the electronic component, reducing the deterioration of the frequency characteristics due to the bulk wave, This is because the frequency characteristics can be improved.

なお、この中間弾性層17を形成するにあたり、部品基板7の側面においては加工変質層12を用いて、また部品基板7の上面においては保護体13を用いたが、これらは電子部品パッケージの生産性を考慮したものであり、以下にその製造方法を説明する。   In forming the intermediate elastic layer 17, the work-affected layer 12 is used on the side surface of the component substrate 7, and the protective body 13 is used on the upper surface of the component substrate 7. The manufacturing method will be described below.

はじめに、ウエハ状の部品基板7を複数の区画に分ける。なお、図3はこの区画の一つを示したものである。そして、ウエハ状の部品基板7の下面全体にアルミニウムを蒸着スパッタし、その後、ドライエッチング加工でIDT電極8等の電極パターンを形成する。なお、IDT電極8の両端部には、短絡電極を平行に配置した反射器を配置するのが一般的であるが、簡略化して示した。   First, the wafer-like component substrate 7 is divided into a plurality of sections. FIG. 3 shows one of these sections. Then, aluminum is vapor-deposited and sputtered on the entire lower surface of the wafer-like component substrate 7, and then an electrode pattern such as the IDT electrode 8 is formed by dry etching. In addition, although it is common to arrange | position the reflector which has arrange | positioned the short circuit electrode in parallel at the both ends of the IDT electrode 8, it has shown it simplified.

次に、図4(a)に示すIDT電極8等の所定の電極パターンを形成したウエハ状態の部品基板7に、図4(b)で示すように部品基板7上全体に感光性樹脂層18を形成し、マスク19を用いてIDT電極8等の所定の電極パターンに相当する部分以外をマスキングし、露光し現像することで図4(c)で示すようにマスキングしていない部分だけ感光性樹脂層18が硬化して残り、マスキングした部分には残らない。   Next, a photosensitive resin layer 18 is formed on the entire component substrate 7 as shown in FIG. 4B on the component substrate 7 in a wafer state on which a predetermined electrode pattern such as the IDT electrode 8 shown in FIG. 4A, and a mask 19 is used to mask portions other than a portion corresponding to a predetermined electrode pattern such as the IDT electrode 8, and the exposure and development are performed so that only the unmasked portion is photosensitive as shown in FIG. The resin layer 18 remains cured and does not remain on the masked portion.

その後、図4(d)で示すように、部品基板7の上面全体にSiO2をスパッタし、次にこの部品基板7を、剥離液などに浸漬し、感光性樹脂層18を溶解して部品基板7から脱落させる。そうすると、図4(e)で示すように、感光性樹脂層18のない部分、すなわちIDT電極8と引き出し電極(図示せず)以外の部分にのみSiO2が残り、この残ったSiO2を接着部19とする。 Thereafter, as shown in FIG. 4 (d), SiO 2 is sputtered on the entire upper surface of the component substrate 7, and then the component substrate 7 is immersed in a stripping solution or the like to dissolve the photosensitive resin layer 18 and dissolve the component. Drop off from the substrate 7. Then, as shown in FIG. 4 (e), SiO 2 remains only in the portion without the photosensitive resin layer 18, that is, the portion other than the IDT electrode 8 and the extraction electrode (not shown), and the remaining SiO 2 is bonded. This is part 19.

一方、部品カバー9は図4(f)に示すように、シリコン板の下面に、前記IDT電極8と向かい合う部分に、ドライエッチング加工あるいはサンドブラスト加工で凹部10を形成し、この部品カバー9と部品基板7とを、接着部19を介して、常温で直接原子間結合することでSAWデュプレクサ6の集合体を形成することができる。なお、本実施の形態では部品カバー9を接着する工程は真空で行った。   On the other hand, as shown in FIG. 4 (f), the component cover 9 has a recess 10 formed on the bottom surface of the silicon plate facing the IDT electrode 8 by dry etching or sandblasting. An assembly of SAW duplexers 6 can be formed by directly bonding atoms between the substrate 7 and the substrate via the bonding portion 19 at room temperature. In the present embodiment, the process of bonding the component cover 9 is performed in a vacuum.

次に、図5(a)で示すように、上記SAWデュプレクサ6の集合体を反転し、部品基板7の上面に保護体13を配置する。この時、保護体13と前記部品基板7とが密着するように、軽く押圧(2atm〜3atm)して接着するとよい。   Next, as shown in FIG. 5A, the assembly of the SAW duplexers 6 is inverted, and the protective body 13 is disposed on the upper surface of the component substrate 7. At this time, the protective body 13 and the component substrate 7 may be lightly pressed (2 atm to 3 atm) and bonded to each other so as to be in close contact with each other.

その後、図5(b)に示すように、回転刃20を用いて、保護体13の上面から部品カバー9の下面までを電子部品毎に切断し、分離する。なお、この回転刃20はダイヤモンド砥粒を付着させたものであり、この回転刃20の砥粒の番手が#1000以上#2000以下であるものを用いた。また、この回転刃20の切断速度は、毎秒約10mm(スピンドルスピード5000〜6000rpm)とした。   Thereafter, as shown in FIG. 5B, the rotating blade 20 is used to cut and separate the electronic component from the upper surface of the protection body 13 to the lower surface of the component cover 9. In addition, this rotary blade 20 has diamond abrasive grains attached thereto, and the rotary blade 20 has an abrasive grain count of # 1000 to # 2000. The cutting speed of the rotary blade 20 was about 10 mm per second (spindle speed 5000 to 6000 rpm).

次に、図6のSAWデュプレクサ6の断面図(図3のB−B断面)に示すように、部品カバー9にドライエッチング加工により貫通孔21を設け、この貫通孔21の内側にTi、Ni、Auを順次蒸着し金属膜を形成し、さらにその金属膜の内部にはんだを印刷して外部端子接続部22を形成する。次に、この外部端子接続部22の下面に実装基板14の外部電極15に接合される図7の受信端子23、アンテナ端子24、送信端子25、グランド端子26を形成する。   Next, as shown in a sectional view of the SAW duplexer 6 in FIG. 6 (BB cross section in FIG. 3), a through hole 21 is provided in the component cover 9 by dry etching, and Ti, Ni are formed inside the through hole 21. Then, Au is sequentially deposited to form a metal film, and solder is printed inside the metal film to form the external terminal connection portion 22. Next, the receiving terminal 23, the antenna terminal 24, the transmitting terminal 25, and the ground terminal 26 of FIG. 7 bonded to the external electrode 15 of the mounting substrate 14 are formed on the lower surface of the external terminal connecting portion 22.

なお、図7は部品カバー9の下面図であり、外部電極15に接合される受信端子23、アンテナ端子24、送信端子25、グランド端子26の配置位置を示している。   FIG. 7 is a bottom view of the component cover 9 and shows the arrangement positions of the reception terminal 23, the antenna terminal 24, the transmission terminal 25, and the ground terminal 26 that are joined to the external electrode 15.

そして、図1に示すように、外部電極15を介して前述のSAWデュプレクサ6を実装基板14上に実装し、その後このSAWデュプレクサ6を、金型に入れ、この金型に加熱したモールド樹脂16を樹脂温度175℃、注入圧力50〜100atmで注入し、その後冷却して電子部品パッケージを成形するのである。   Then, as shown in FIG. 1, the SAW duplexer 6 described above is mounted on the mounting substrate 14 via the external electrode 15, and then the SAW duplexer 6 is placed in a mold and the mold resin 16 heated in the mold is heated. Is injected at a resin temperature of 175 ° C. and an injection pressure of 50 to 100 atm, and then cooled to form an electronic component package.

そして、このような製造過程において、図2に示す部品基板7の側面の中間弾性層17となる加工変質層12は、図5(b)に示す回転刃20を用いてウエハ状のSAWデュプレクサ6を切断・分離する工程において、その回転刃20の砥粒の番手を#1000以上#2000以下とすることによって切断面に細かな凹凸が形成され、この凹凸にモールド樹脂16が入り込み混成構造となることで、この部分での弾性率は部品基板7より小さく且つモールド樹脂16より大きい加工変質層12が形成されるので、特に専用の工程を設けることなく容易に部品基板7の側面に中間弾性層17を設けることができるのである。   In such a manufacturing process, the work-affected layer 12 to be the intermediate elastic layer 17 on the side surface of the component substrate 7 shown in FIG. 2 is used as the wafer-like SAW duplexer 6 using the rotary blade 20 shown in FIG. In the step of cutting / separating, by setting the count of the abrasive grains of the rotary blade 20 to # 1000 or more and # 2000 or less, fine irregularities are formed on the cut surface, and the mold resin 16 enters the irregularities to form a hybrid structure. As a result, the work-affected layer 12 having an elastic modulus smaller than that of the component substrate 7 and larger than that of the mold resin 16 is formed. Therefore, the intermediate elastic layer can be easily formed on the side surface of the component substrate 7 without providing a special process. 17 can be provided.

また、部品基板7の上面の中間弾性層17となる保護体13については、先に延べたようなウエハ状の集合体の表面に配置して軽く押圧するというように、簡単に形成することができるのである。   Further, the protective body 13 which becomes the intermediate elastic layer 17 on the upper surface of the component substrate 7 can be easily formed such that it is placed on the surface of the wafer-like assembly as previously extended and lightly pressed. It can be done.

なお、保護体13を部品基板7の上面に配置する際、軽く押圧(2atm〜3atm)するのは、図8に示すように、一般的に部品基板7の表面には研磨加工による細かな凹凸があることから、常圧で保護体13を配置するだけでは、この保護体13と部品基板7が密着せず、凹凸に空気が介在してしまい、この空気の音響インピーダンスが部品基板7と著しく異なることから、バルク波27は部品基板7と保護体13との界面で殆ど反射してしまうが、保護体13の配置の際に押圧することによって、部品基板7の凹凸にも保護体13が入り込み密着度を高めることができ、部品基板7と音響インピーダンスが著しく乖離する空気の介在を低減することができ、部品基板7から保護体13へのバルク波27の透過量を増大させることができる。よってバルク波27の積算減衰量を増大させ、結果として電子部品の周波数特性を向上させることができるのである。   When the protector 13 is placed on the upper surface of the component substrate 7, lightly pressing (2 atm to 3 atm) is generally performed on the surface of the component substrate 7 with fine irregularities by polishing as shown in FIG. Therefore, the protective body 13 and the component board 7 are not in close contact with each other only by placing the protective body 13 at normal pressure, and air is interposed between the projections and depressions, and the acoustic impedance of this air is significantly different from that of the component board 7. Since the bulk wave 27 is almost reflected at the interface between the component substrate 7 and the protection body 13 due to the difference, the protection body 13 is also applied to the unevenness of the component substrate 7 by pressing when the protection body 13 is arranged. It is possible to increase the penetration and adhesion degree, to reduce the presence of air in which the acoustic impedance is significantly separated from the component substrate 7, and to increase the transmission amount of the bulk wave 27 from the component substrate 7 to the protective body 13. . Therefore, the integrated attenuation amount of the bulk wave 27 can be increased, and as a result, the frequency characteristics of the electronic component can be improved.

さらに、上記保護体13によって、電子部品の薄型化を達成することができる。   Further, the protective body 13 can achieve a thin electronic component.

すなわち、従来は前述のバルク波27を減衰させるため、部品基板7の厚みを増加し、バルク波の伝搬距離を増やす手段をとっていた。しかし、単結晶構造である部品基板7と異なり、保護体13は樹脂製のため、その分子構造は規則性が乏しく、したがって部品基板7よりも保護体13の方がバルク波27の減衰量が増加する。よって、同じバルク波27の減衰率を得ようとすれば、部品基板7だけの場合より、保護体13を設けた方が薄くできるからである。   That is, conventionally, in order to attenuate the bulk wave 27 described above, a means for increasing the thickness of the component substrate 7 and increasing the propagation distance of the bulk wave has been taken. However, unlike the component substrate 7 having a single crystal structure, since the protector 13 is made of resin, the molecular structure thereof is less regular. To increase. Therefore, if the attenuation rate of the same bulk wave 27 is to be obtained, it is possible to make the protective body 13 thinner than the case of using only the component substrate 7.

なお、本実施の形態では保護体13として図8に示すようにフィラ28を含有するエポキシ樹脂を用いたが、部品基板7との接着性がよく、部品基板7の撓みを押さえる程度の弾性率を有するものであれば他の物質を用いてもよい。なお、保護体13として樹脂を用いる場合、フィラ28を含まない一般的な樹脂テープの弾性率が3GPa未満であるから、樹脂にフィラ28を含有させ、弾性率を3GPa以上とすることが好ましい。また、フィラ28の含有率は、エポキシ樹脂を用いる場合、フィラ28を過度に増加すると、接着性が悪くなることから、20wt%〜50wt%が望ましい。   In this embodiment, an epoxy resin containing a filler 28 is used as the protector 13 as shown in FIG. 8, but it has good adhesiveness with the component substrate 7 and has an elastic modulus enough to suppress the deflection of the component substrate 7. Other materials may be used as long as they have the following. In addition, when using resin as the protection body 13, since the elastic modulus of the general resin tape which does not contain the filler 28 is less than 3 GPa, it is preferable to make the resin contain the filler 28 and to make the elastic modulus 3 GPa or more. Moreover, since the adhesiveness will worsen when the filler 28 is increased too much when using an epoxy resin, the content rate of the filler 28 is desirable 20 wt%-50 wt%.

(実施の形態2)
本実施の形態2の実施の形態1との違いは、図9に示すように、キャビティ11の下方に相当する部分にダミー電極29を配置したことであり、外圧によるSAWデュプレクサ6の損傷を抑制することができる。これは、保護体13を設ける際、押圧する必要があることから、薄型でキャビティ11を有する損傷しやすい電子部品には特に有効である。
(Embodiment 2)
The difference between the second embodiment and the first embodiment is that, as shown in FIG. 9, the dummy electrode 29 is disposed in a portion corresponding to the lower portion of the cavity 11, and the damage of the SAW duplexer 6 due to the external pressure is suppressed. can do. This is particularly effective for a thin and easily damaged electronic component having a cavity 11 because it needs to be pressed when the protective body 13 is provided.

すなわち、ダミー電極29が、実装基板14とSAWデュプレクサ6との間の支柱となるため、部品カバー9に加わる外部からの圧力を効果的に分散することができる。よってこの結果、電子部品パッケージの外圧に対する強度を向上させ、SAWデュプレクサ6の損傷を防止することができるのである。   That is, since the dummy electrode 29 serves as a support between the mounting substrate 14 and the SAW duplexer 6, the external pressure applied to the component cover 9 can be effectively dispersed. Therefore, as a result, the strength of the electronic component package against external pressure can be improved, and damage to the SAW duplexer 6 can be prevented.

また、部品基板7上に複数のIDT電極8を形成する場合、全てのIDT電極8を覆うように一つのキャビティ11を設けてもよいが、本実施の形態のように、一つあるいは二つのIDT電極8毎にキャビティ11を形成してもよい。このように、キャビティ11を複数形成することによってSAWデュプレクサ6の損傷を抑制することができる。   Further, when a plurality of IDT electrodes 8 are formed on the component substrate 7, one cavity 11 may be provided so as to cover all the IDT electrodes 8, but as in the present embodiment, one or two cavities 11 are provided. A cavity 11 may be formed for each IDT electrode 8. In this way, the formation of a plurality of cavities 11 can suppress damage to the SAW duplexer 6.

すなわち、キャビティ11部分に支えとなるものが無い場合、部品基板7や部品カバー9に外圧が印加されると、このキャビティ11の方へ割れたりして損傷してしまうことがある。しかしキャビティ11を複数に分割することによって、このキャビティ11とキャビティ11の間に仕切り壁30が形成され、この仕切り壁30が支柱となって、外部応力を分散することができるのである。そしてこの結果、部品基板7あるいは部品カバー9の割れを抑制することができるのである。なお、この仕切り壁30はキャビティ11内に、別途樹脂等により任意に形成してもよい。   That is, when there is nothing to support the cavity 11 portion, when external pressure is applied to the component substrate 7 and the component cover 9, the cavity 11 may be broken and damaged. However, by dividing the cavity 11 into a plurality of parts, a partition wall 30 is formed between the cavities 11 and the cavity 11, and the partition wall 30 can be a support column to disperse external stress. As a result, the component substrate 7 or the component cover 9 can be prevented from cracking. The partition wall 30 may be arbitrarily formed in the cavity 11 with a resin or the like separately.

また、この複数のキャビティ11は個々完全に分割して形成してもよいが、隣接するキャビティ11間にトンネル状の通路により繋がった連通路(図示せず)により一部連結してもよい。このように連通路を設けることによって、キャビティ11の一部に過剰な外圧が印加された場合、その外圧を、連通路を介して他のキャビティ11へと分散させることができる。そしてその結果、電子部品パッケージの外圧に対する強度を向上させることができるのである。   The plurality of cavities 11 may be formed by being completely divided individually, but may be partially connected by a communication path (not shown) connected between adjacent cavities 11 by a tunnel-like path. By providing the communication path in this manner, when an excessive external pressure is applied to a part of the cavity 11, the external pressure can be dispersed to other cavities 11 through the communication path. As a result, the strength against the external pressure of the electronic component package can be improved.

また、本実施の形態のSAWデュプレクサ6は、IDT電極8に対向する部分にダミー電極29を配置し、実装基板14の外部電極15と接合させることにより、キャビティ11の下方では部品カバー9と実装基板14との間の隙間が小さくなり、モールド樹脂16が入り込む量を減らすことができる。したがって、モールド加工時において、部品カバー9の下方からキャビティ11に向かって印加される圧力を低減し、部品カバー9の損傷を抑制することができる。   In the SAW duplexer 6 according to the present embodiment, the dummy electrode 29 is disposed in a portion facing the IDT electrode 8 and joined to the external electrode 15 of the mounting substrate 14, so that the component cover 9 and the component cover 9 are mounted below the cavity 11. The gap between the substrate 14 is reduced, and the amount of the mold resin 16 entering can be reduced. Therefore, during molding, the pressure applied from below the component cover 9 toward the cavity 11 can be reduced, and damage to the component cover 9 can be suppressed.

その他の構成、製造方法、動作、効果については実施の形態1と同様であるため省略する。   Other configurations, manufacturing methods, operations, and effects are the same as those in the first embodiment, and are therefore omitted.

(実施の形態3)
本実施の形態3の実施の形態1との違いは、図10に示すように、図7のグランド端子26を一つにまとめ、受信端子23、アンテナ端子24、送信端子25を除いた略全面に、大きなグランド端子31を設けたことである。
(Embodiment 3)
The difference between the third embodiment and the first embodiment is that, as shown in FIG. 10, the ground terminals 26 of FIG. 7 are combined into one, and the substantially entire surface excluding the receiving terminal 23, the antenna terminal 24, and the transmitting terminal 25. In addition, a large ground terminal 31 is provided.

このような構造とすることにより、グランド端子31が部品カバー9と実装基板14との間の支柱となり、効果的に外圧を分散させ、SAWデュプレクサ6の損傷を防ぐことができる。   With such a structure, the ground terminal 31 becomes a support between the component cover 9 and the mounting substrate 14, and the external pressure can be effectively dispersed and damage to the SAW duplexer 6 can be prevented.

これは、保護体13を設ける際、押圧する必要があることから、薄型かつキャビティ11を有するような損傷しやすい電子部品には特に有効である。   This is particularly effective for an electronic component that is thin and easily damaged, such as having a cavity 11, because it is necessary to press the protective body 13.

またグランド端子31があることによって、その体積分だけ部品カバー9と実装基板14との間へ入り込むモールド樹脂16の量が減り、部品カバー9の下方から印加される圧力を抑制することができる。   Further, the presence of the ground terminal 31 reduces the amount of the mold resin 16 that enters between the component cover 9 and the mounting substrate 14 by the volume of the ground terminal 31, thereby suppressing the pressure applied from below the component cover 9.

その他の構成、製造方法、動作、効果については実施の形態1と同様であるため省略する。   Other configurations, manufacturing methods, operations, and effects are the same as those in the first embodiment, and are therefore omitted.

なお、実施の形態1から3において、部品カバー9としてシリコンを用いたが、この部品カバー9はサファイア、水晶、ガラス、フィラを含有するエポキシ樹脂などを用いてもよい。さらに、図11に示すように、部品カバー9として凹部のない平板を用い、部品カバー9と部品基板7との間にアルミニウムなどの金属、あるいはSiO2などの接着部32を設けることによってキャビティ11を形成してもよい。その他、図12に示すように素子(IDT電極8)の下方を覆う素子カバー33を設け、その外周を部品カバー9で被覆してもよい。なお、これらの部品カバー9には、IDT電極8を酸化や湿気による腐食から守る効果がある。 In the first to third embodiments, silicon is used as the component cover 9, but the component cover 9 may be made of sapphire, crystal, glass, epoxy resin containing filler, or the like. Further, as shown in FIG. 11, the cavity 11 is formed by using a flat plate without a concave portion as the component cover 9 and providing a bonding portion 32 such as a metal such as aluminum or SiO 2 between the component cover 9 and the component substrate 7. May be formed. In addition, as shown in FIG. 12, an element cover 33 covering the lower part of the element (IDT electrode 8) may be provided, and the outer periphery thereof may be covered with the component cover 9. These component covers 9 have an effect of protecting the IDT electrode 8 from corrosion due to oxidation and moisture.

本発明にかかる電子部品パッケージは、電子部品の周波数特性を向上させることができるため、SAWフィルタやBAW等の弾性波を利用した電子部品のパッケージにも応用できるものである。   Since the electronic component package according to the present invention can improve the frequency characteristics of the electronic component, the electronic component package can also be applied to an electronic component package using an elastic wave such as a SAW filter or BAW.

実施の形態1における電子部品パッケージの断面図Sectional drawing of the electronic component package in Embodiment 1 実施の形態1における電子部品パッケージの拡大断面図The expanded sectional view of the electronic component package in Embodiment 1 実施の形態1における部品基板の下面図Bottom view of component board in the first embodiment 実施の形態1におけるSAWデュプレクサの製造工程図Manufacturing process diagram of SAW duplexer in Embodiment 1 実施の形態1におけるSAWデュプレクサの製造工程図Manufacturing process diagram of SAW duplexer in Embodiment 1 実施の形態1におけるSAWデュプレクサの断面図Sectional view of SAW duplexer in Embodiment 1 実施の形態1における部品カバーの下面図The bottom view of the component cover in Embodiment 1 電子部品内部におけるバルク波の透過と減衰を示す模式図Schematic diagram showing transmission and attenuation of bulk waves inside electronic components 実施の形態2における部品カバーの下面図The bottom view of the component cover in Embodiment 2 実施の形態3における部品カバーの下面図The bottom view of the component cover in Embodiment 3 他の実施の形態における電子部品パッケージの断面図Sectional drawing of the electronic component package in other embodiment さらに他の実施の形態における電子部品パッケージの断面図Sectional drawing of the electronic component package in other embodiment 従来の電子部品パッケージの断面図Sectional view of a conventional electronic component package

符号の説明Explanation of symbols

6 電子部品
7 部品基板
8 IDT電極
9 部品カバー
12 加工変質層
13 保護体
14 実装基板
15 外部電極
16 モールド樹脂
17 中間弾性層
6 Electronic Component 7 Component Board 8 IDT Electrode 9 Component Cover 12 Processed Alteration Layer 13 Protective Body 14 Mounting Board 15 External Electrode 16 Mold Resin 17 Intermediate Elastic Layer

Claims (4)

実装基板と、この実装基板上に配置された外部電極と、この外部電極を介して前記実装基板上に実装された電子部品と、この電子部品を前記実装基板上において被覆したモールド樹脂とを備え、前記電子部品は、圧電体からなる部品基板と、この部品基板の下面に配置したIDT電極と、前記部品基板の下方を覆う部品カバーとを有し、前記部品基板の上面と前記モールド樹脂との間に弾性率が前記部品基板より小さく、かつ前記モールド樹脂より大きい中間弾性層を設けたことを特徴とする電子部品パッケージ。 A mounting substrate, an external electrode disposed on the mounting substrate, an electronic component mounted on the mounting substrate via the external electrode, and a mold resin that covers the electronic component on the mounting substrate. The electronic component includes a component substrate made of a piezoelectric body, an IDT electrode disposed on a lower surface of the component substrate, and a component cover that covers a lower portion of the component substrate. The upper surface of the component substrate, the mold resin, An electronic component package comprising an intermediate elastic layer having an elastic modulus smaller than that of the component substrate and larger than that of the mold resin. 前記中間弾性層を、弾性率が3GPa以上の樹脂により構成した請求項1に記載の電子部品パッケージ。The electronic component package according to claim 1, wherein the intermediate elastic layer is made of a resin having an elastic modulus of 3 GPa or more. 前記中間弾性層を、SiOThe intermediate elastic layer is made of SiO. 22 のフィラを20wt%〜50wt%含有させたエポキシ樹脂により構成した請求項1に記載の電子部品パッケージ。The electronic component package according to claim 1, wherein the electronic component package is made of an epoxy resin containing 20 wt% to 50 wt% of the filler. 前記中間弾性層を、前記部品基板の上面と前記モールド樹脂の間、および前記部品基板の側面と前記モールド樹脂の間に設けた請求項1に記載の電子部品パッケージ。The electronic component package according to claim 1, wherein the intermediate elastic layer is provided between an upper surface of the component substrate and the mold resin, and between a side surface of the component substrate and the mold resin.
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