JP4808760B2 - Manufacturing method of radiation detector - Google Patents

Description

  The present invention relates to a method for manufacturing a radiation detector comprising a photodiode array.

Conventionally, this type of photodiode array is a type of front-illuminated photodiode array in which an output signal from the photodiode array is electrically connected to the back side by a through wiring (electrode) connecting the light incident side and the back side. Is known (see, for example, Patent Document 1). As shown in FIG. 17, the photodiode array disclosed in Patent Document 1 receives a signal from each diffusion layer 151 in which photodiodes 144a, 144b, 144c,. A wiring 152 to be taken out is formed on the surface of the photodiode array 144, and the wiring 152 is extended so as to be connected to the through wiring 154 penetrating the front and back of the Si wiring substrate 153. Further, bumps 155 connected to the through wiring 154 are formed on the back surface side of the photodiode 144, and the wiring 152, the through wiring 154, and the Si wiring substrate 153 are insulated by insulating films 156a, 156b, and 156c of silicon oxide films. ing.
JP 2001-318155 A

  By the way, in order to mount the photodiode array described above, for example, a CT photodiode array, a flat collet and a pyramid collet can be used as a collet for adsorbing a chip, but a flat collet is usually used for flip chip bonding. Has been. The CT photodiode array has a large chip area (for example, a rectangular shape having a side of 20 mm). As shown in FIG. 16B, when a pyramid collet 161 used in a normal mounter is used, the chip 162 and the pyramid collet are used. There is a possibility that the gap 163 and the warp 161 may cause a warp, and the warp may cause a positional shift, resulting in a decrease in mounting accuracy. In addition, heating and pressurization are required for flip chip bonding. However, the pyramid collet 161 has poor heat transfer efficiency, and the applied pressure may cause damage to the chip edge. 161 is not suitable for thin chips. For this reason, when performing flip chip bonding, as shown in FIG. 16A, the chip 162 is adsorbed by the flat collet 160 that is in surface contact with the chip surface, and heat is applied to the chip 162 from the heater block 164. Pressure is being applied.

  However, when the flat collet 160 is used, the entire chip surface of the chip 162 comes into contact with the flat collet 160. In this chip 162, the chip surface that contacts the flat collet 160 is the light incident surface on which the light detection portion, that is, the impurity diffusion layer constituting the photodiode array is formed. When the entire chip surface as the light incident surface comes into contact with the flat collet 160 and is pressurized and heated, the light detection unit itself is physically damaged (damaged). If it becomes so, the appearance defect and characteristic deterioration (dark current, noise increase, etc.) by a surface flaw will be brought to a light detection part.

  In addition to flip-chip bonding, when the photodiode array 1 is integrated with a scintillator to form a CT sensor, if the scintillator is in direct contact with the light detection unit, damage occurs when the scintillator is attached.

  SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to solve the above-mentioned problems and to provide a method of manufacturing a radiation detector including a photodiode array that can prevent deterioration of characteristics due to damage of the photodiode array when mounted or attached with a scintillator. .

  In order to solve the above problems, a radiation detector manufacturing method according to the present invention includes a photodiode array, and a scintillator panel that is attached to the incident surface side of the detected light of the photodiode array and emits light by incident radiation. A first step of forming a through-wiring penetrating both side surfaces of a semiconductor substrate in a semiconductor substrate made of a first conductivity type semiconductor, and a predetermined region on one side surface of the semiconductor substrate. A second step of forming an impurity diffusion layer of a plurality of second conductivity types by adding impurities, and arranging a plurality of photodiodes by each impurity diffusion layer and the semiconductor substrate, and one surface side of the semiconductor substrate; And a film thickness that functions as a cushion layer that covers at least the region where the photodiode is formed and protects the formation region of the photodiode. A photodiode array is manufactured by the third step of providing a transparent resin film of ˜50 μm, and then the step of mounting the photodiode array on the mounting wiring board, and the scintillator panel on the transparent resin film of the photodiode array, And a step of attaching via an optical resin that transmits light emitted from.

In the photodiode array in this manufacturing method of the radiation detector, the resin film is interposed between the region where the photodiode is formed and the flat collet used at the time of mounting. Therefore, the photodiode is used at the time of mounting by the resin film. It is protected without direct contact with the flat collet, and is not subjected to stress due to pressurization or stress due to heating.
Also, damage when the scintillator is attached can be avoided.
The scintillator panel is attached to the surface side (incident surface side) of the photodiode array, and the photodiode array is provided with a transparent resin film on the surface side thereof. Therefore, although the back surface (light emitting surface) of the scintillator panel is in contact with the transparent resin film, it is not in direct contact with the photodiode formation region. In addition, the light exit surface of the scintillator panel is attached via an optical resin designed so that the light transmission characteristics are not deteriorated, so that the light emitted from the scintillator panel can efficiently enter the photodiode array. It has become.

The photodiode array is preferably provided with the resin film on the entire incident surface side of the semiconductor substrate. This photodiode array can reliably cover the entire region where each photodiode is formed with a resin film, and can be easily manufactured.
In the photodiode array, the semiconductor substrate may be provided with an impurity region (separation layer) that separates each photodiode between adjacent photodiodes. In these photodiode arrays, the surface leakage is suppressed by the separation layer, so that adjacent photodiodes are electrically separated from each other reliably.

In manufacturing the photodiode array in the manufacturing method of the radiation detector of the present invention, a first step of forming a through-wiring penetrating both surfaces of the semiconductor substrate on the semiconductor substrate made of the first conductivity type semiconductor, and the semiconductor substrate A plurality of second conductivity type impurity diffusion layers are formed by adding an impurity to a predetermined region, and a plurality of photodiodes each having an impurity diffusion layer and a semiconductor substrate are arranged in an array. And a third step of providing a transparent resin film having a film thickness of 1 to 50 μm on one surface side of the semiconductor substrate so as to cover at least a region where the photodiode is formed and function as a cushion layer for protecting the formation region of the photodiode. It has.
According to this method for manufacturing a photodiode array, a photodiode film can be manufactured by providing a resin film covering the formation region of the photodiode on the incident surface side of the semiconductor substrate. In the method of manufacturing a photodiode array, the first step includes a step of forming a plurality of holes in the semiconductor substrate, a step of forming a conductive film on at least one surface of the semiconductor substrate including the holes, and a semiconductor A step of polishing the substrate to remove the conductive film can be provided.
The method for manufacturing these photodiode arrays further includes a step of providing another impurity region between the regions to which adjacent impurities are added to provide a first conductivity type impurity region after the first step. be able to. According to this manufacturing method, a photodiode array in which adjacent photodiodes are reliably separated can be obtained.

  Produced by a step of mounting the obtained photodiode array on a mounting wiring board and a step of attaching a scintillator panel on the transparent resin film of the photodiode array via an optical resin that transmits light emitted from the scintillator panel. In the radiation detector, the photodiode formed on the light incident surface of the photodiode array is protected by a resin film so that it is protected from damage caused by pressurization and heating during mounting, and damage due to scintillator mounting. It is possible to prevent deterioration of characteristics due to increase in dark current.

  According to the present invention, in the manufacturing method of the radiation detector, it is possible to effectively prevent the generation of noise, dark current, and the like due to the damage of the photodiode during mounting and scintillator mounting.

Embodiments of the present invention will be described below. In addition, the same code | symbol is used for the same element and the overlapping description is abbreviate | omitted.
FIG. 1 is a cross-sectional view schematically showing a photodiode array 1 according to an embodiment of the present invention. In the following description, the light L incident surface is the front surface, and the opposite surface is the back surface. In the following drawings, the dimensions are appropriately changed for the convenience of illustration.
In the photodiode array 1, a plurality of photodiodes 4 with pn junctions are two-dimensionally arranged in a regular array vertically and horizontally, and each photodiode 4 has a function as one pixel of the photodiode array 1, The photodetection unit is configured.

The photodiode array 1 has an n-type (first conductivity type) silicon substrate 3 having a thickness of about 150 to 500 μm (preferably 400 μm) and an impurity concentration of about 1 × 10 ¹² to 10 ¹⁵ / cm ³ . A passivation film 2 made of SiO ₂ having a thickness of about 0.05 to 1 μm (preferably 0.1 μm) is formed on the front and back surfaces of the n-type silicon substrate 3. The photodiode array 1 has a p-type (second conductivity type) having an impurity concentration of 1 × 10 ¹⁵ to 10 ²⁰ / cm ³ and a film thickness of about 0.05 to ²⁰ μm (preferably 0.2 μm) on the surface side. ) Impurity diffusion layers 5 are two-dimensionally arranged in a regular and vertical array. A pn junction formed by each p-type impurity diffusion layer 5 and n-type silicon substrate 3 constitutes a photodiode 4.

  The region where each p-type impurity diffusion layer 5 exists is a region (formation region) where the photodiode 4 is formed, and the other region is a non-formation region where no photodiode is formed, and on the surface side thereof, A transparent resin film 6 capable of covering at least the entire formation region of the photodiode 4 is provided on the entire surface side.

  Since this transparent resin film 6 serves as a protective film for the photodetection unit comprising the entire photodiode 4 and is disposed on the incident surface side, the light detected by the photodiode array 4 (detected light, for example, a scintillator panel 31 described later) A transparent resin that is optically transparent to the light to be detected, such as epoxy resin, polyimide, silicone, fluorine, acrylate, or a composite material based on them. ing.

Further, as will be described later, the transparent resin film 6 is directly contacted with the flat collet at the time of flip chip bonding, and is pressurized and heated. It is preferable to have a characteristic that can function as a protective cushion layer. In this case, for example, the thermal expansion coefficient is about 1 × 10 ⁻⁶ to 1 × 10 ⁻⁴ / ° C., the elastic property is about 10 to 12000 kg / cm ² , and the thermal conductivity is 0.2 to 1.85 W / m ° C. It is preferable that the impurity ions do not diffuse into the photodiode 4 due to heating and have a film thickness (about 1 to 50 μm (preferably about 10 μm)) at least capable of absorbing light from a scintillator panel 31 described later.

  The transparent resin film 6 may be provided in a range that can cover at least the entire formation region of the photodiode 4. If this requirement is satisfied, the entire formation region of the photodiode 4 may be covered with one transparent resin film 6, and the transparent resin film 6 is formed separately for each photodiode 4, and in the non-formation region, A missing portion 6a that is not partially formed may be formed (see FIG. 14). However, in terms of simplifying the manufacturing process, it is preferable to provide one transparent resin film 6 on the entire surface side (this point will be described in detail later).

The photodiode array 1 has a through wiring 8 for each photodiode 4. Each through wiring 8 penetrates the front surface side and the back surface side of the n-type silicon substrate 3 and is formed to have a diameter of about 10 μm to 100 μm (preferably about 50 μm), and the phosphorus concentration is 1 × 10 ¹⁵ to 10 ²⁰ / cm. ^{3 is made} of polysilicon, and the front side is electrically connected to the p-type impurity diffusion layer 5 via an electrode wiring 9 (thickness is about 1 μm) made of aluminum, and the back side is also an electrode pad made of aluminum. 10 (film thickness is 0.05 μm to 5 μm, preferably about 1 μm) are electrically connected. A solder bump electrode 12 is connected to each electrode pad 10 via an under bump metal (UBM) 11 made of Ni—Au. Each through wiring 8 is provided in a non-formation region where the photodiode 4 is not formed, but may be provided in other portions.

Further, the illustrated photodiode array 1 includes an n ⁺ -type impurity region (separation layer) 7 between the p-type impurity diffusion layers 5, that is, between the adjacent photodiodes 4 and 4, with a depth of about 0.5 to 6 μm. Is provided. The n ⁺ -type impurity region (separation layer) 7 has a function of electrically separating adjacent photodiodes 4 and 4, and by providing this, the adjacent photodiodes 4 and 4 are electrically and reliably separated. In addition, crosstalk between the photodiodes 4 can be reduced. However, the photodiode array 1 has photodetection characteristics that are sufficiently acceptable for practical use even if the n ⁺ -type impurity region 7 is not provided.

  FIG. 2 is a side view of the semiconductor chip 30 constituting the photodiode array 1 and a sectional view showing an enlarged main part thereof. As shown in FIG. 2, the semiconductor chip 30 is a very thin plate having a width W1 of about 22.4 mm and a thickness D of about 0.3 mm, and has a large number of the above-described photodiodes 4 (for example, 16 × 16). 2), a chip having a large area (for example, 22.4 mm × 22.4 mm) having a pitch W2 between adjacent pixels of about 1.4 mm.

  In the photodiode array 1 configured as described above, when the light L is incident from the surface side, the detected light L is transmitted through the transparent resin film 6 and then enters each p-type impurity diffusion layer 5. Each photodiode 4 generates a carrier corresponding to the incident light. The photocurrent generated by the carriers is taken out from the bump electrode 12 through the electrode wiring 9 and the through wiring 8 connected to each p-type impurity diffusion layer 5 and further through the electrode pads 10 and the UBM 11 on the back surface side. . Incident light is detected by the output from the bump electrode 12.

  As described above, the photodiode array 1 is provided with the transparent resin film 6 on the surface side that can cover the entire formation region of the photodiode 4. Therefore, when the flip chip bonding is performed by adsorbing the semiconductor chip 30 to the flat collet, the transparent resin film 6 is in contact with the flat collet and is arranged in a manner interposed between the flat collet and the photodiode 4 formation region. Is done. Thereby, the formation region of the photodiode 4 constituting the photodetecting portion is protected by the transparent resin film 6 and does not directly contact the flat collet. Therefore, in the photodiode array 1, since the light detection unit is not directly subjected to stress due to pressurization or stress due to heating, the light detection unit itself is not subjected to physical damage (damage), and noise caused by such damage. And generation of dark current can be suppressed. Therefore, the photodiode array 1 can perform light detection with high accuracy (high S / N ratio). Further, since the transparent resin film 6 can function as a cushion layer that can protect each photodiode 4, it can also absorb a physical impact when adsorbed on a flat collet, which is also effective in this respect. is there.

As will be described later, in addition to flip chip bonding, for example, when the photodiode array 1 is integrated with a scintillator to form a CT sensor, the scintillator does not directly contact the light detection unit. Damage can also be avoided.
By the way, the photodiode array 1 described above may be configured as follows. For example, as shown in FIG. 11, phosphorus may be diffused also in the sidewall of the hole 15, and the n ⁺ -type impurity region 7 may be provided around the through wiring 8. If it carries out like this, the unnecessary carrier from the damage layer at the time of forming the hole part 14 can be trapped, and a dark current can be suppressed. In this case, the concentration of phosphorus to be added is preferably about 1 × 10 ¹⁵ to 10 ²⁰ / cm ³ , and the thickness (depth) of the n ⁺ -type impurity region 7 is preferably about 0.1 to 5 μm.

  Further, as shown in FIG. 12, a silicon nitride film 26 having a thickness of about 0.1 to 2 μm may be provided on the silicon oxide film 20 in the hole 15. In this way, it is possible to reliably insulate the n-type silicon substrate 3 and the through wiring 8 and reduce malfunctions.

Furthermore, phosphorus may be doped and diffused also on the back surface side, and an n ⁺ -type impurity region 7 may be provided as shown in FIG. In this case, the cathode electrode 16 can be taken from the back surface. This eliminates the need to provide a through wiring for the cathode, leading to a reduction in damage, a reduction in dark current, and a reduction in defect rate. Of course, if necessary, a through wiring may be provided from the n + -type impurity region 7 formed on the front surface, and the electrode as the cathode may be provided on the back surface side.

Next, a method for manufacturing the photodiode array 1 according to the present embodiment will be described with reference to FIGS.
First, an n-type silicon substrate 3 having a thickness of about 150 to 500 μm (preferably 400 μm) is prepared. Subsequently, as shown in FIG. 3, a diameter of 10 μm to 100 μm (preferably 50 μm) is formed on the surface of the n-type silicon substrate 3 (hereinafter, this surface is the front surface and the opposite surface is the back surface) by ICP-RIE. A plurality of holes 14 not penetrating to a depth corresponding to the thickness of the n-type silicon substrate 3 (for example, about 100 to 350 μm) corresponding to the photodiodes 4, and then the front and back surfaces of the substrate Is subjected to thermal oxidation to form a silicon oxide film (SiO ₂ ) 20. A through wiring 8 is formed in each hole portion 14 later. The silicon oxide film (SiO ₂ ) 20 realizes electrical insulation between a later-described through wiring 8 and the n-type silicon substrate 3.

Next, as shown in FIG. 4, a polysilicon film 21 is formed on the front and back surfaces or only the front surface of the substrate as a conductive film to which phosphorus is added as an impurity. The hole is filled with resisted polysilicon. Subsequently, as shown in FIG. 5, the front and back surfaces of the substrate are polished to remove the polysilicon film 21 formed on the front and back surfaces, and the polysilicon buried in the holes 14 is exposed from the front and back surfaces. Then, after forming the hole portions 15 penetrating the surfaces on both sides, the above-mentioned buried polysilicon is made into the through wiring 8, and the surface and the back surface of the substrate are again thermally oxidized to form the silicon oxide film 22. This silicon oxide film 22 is used as an n ⁺ thermal diffusion mask in the subsequent process.

Then, the silicon oxide film 22 on the surface side of the n-type silicon substrate 3 is patterned using a predetermined photomask, and only the region where the n ⁺ -type impurity region 7 is to be provided is opened. The n ⁺ -type impurity region 7 is provided by diffusing phosphorus from the portion (if the n ⁺ -type impurity region 7 is not provided, this step (impurity region forming step) may be omitted). Thereafter, the front and back surfaces of the substrate are again thermally oxidized to form a silicon oxide film 23 (see FIG. 6). This silicon oxide film 23 is used as a mask when the p-type impurity diffusion layer 5 is formed in a subsequent process.

  Subsequently, the silicon oxide film 23 is patterned using a predetermined photomask to open only regions where the p-type impurity diffusion layers 5 are to be formed. Then, boron is diffused from the opening, and the p-type impurity diffusion layers 5 are formed in a two-dimensional array in a vertical and horizontal array. Thereafter, the front and back surfaces of the substrate are again thermally oxidized to form a silicon oxide film 24 (see FIG. 7). As a result, the photodiodes 4 formed by pn junctions between the p-type impurity diffusion layers 5 and the n-type silicon substrate 3 are formed in a two-dimensional array in a vertical and horizontal array, and the photodiodes 4 correspond to pixels.

Further, a contact hole is formed in a region where each through wiring 8 is formed. Subsequently, after forming an aluminum metal film on the entire surface and the back surface, patterning is performed using a predetermined photomask, unnecessary portions of the metal film are removed, and the electrode wiring 9 on the front surface side and the back surface side are removed. Electrode pads 10 are respectively formed on the substrate (see FIG. 8). Only the anode electrode extraction is shown in the figure. When the cathode electrode is taken from the front surface, although not shown, it can be taken out from the n ⁺ -type impurity region 7 to the back surface through the electrode wiring 9 and the through wiring 8.

  Next, an epoxy resin, polyimide, silicone, fluorine, acrylate, or the like as a material for the transparent resin film 6 or a composite resin based on them is applied to the surface side of the n-type silicon substrate 3 and spinned. A transparent resin film 6 is provided by spreading and curing over the entire surface by coating or screen printing. By providing the transparent resin film 6, the formation region of the photodiode 4 constituting the photodetecting portion is protected. In addition, when forming the above-mentioned lacking part 6a in the transparent resin film 6, the applied resin may be removed from the part of the lacking part 6a, but even so, the formation region of the photodiode 4 is protected.

Each electrode pad 10 is provided with a bump electrode 12. When solder is used as the bump electrode 12, since the solder has poor wettability with respect to aluminum, each UBM 11 for mediating between each electrode pad 10 and the bump electrode 12 is provided. A bump electrode 12 is formed on the electrode pad 10 and overlaid on the UBM 11 (see FIG. 10). Through the above steps, it is possible to manufacture the photodiode array 1 that can perform high-precision light detection without generating noise due to damage during mounting.
In this case, the UBM 11 is formed using Ni—Au by electroless plating, but may be formed using Ti—Pt—Au or Cr—Au by a lift-off method. Further, the bump electrode 12 is obtained by forming solder on a predetermined UBM 11 by a solder ball mounting method or a printing method and performing reflow. The bump electrode 12 is not limited to solder, and may be a gold bump, a nickel bump, a copper bump, or a conductive resin bump containing a metal such as a conductive filler.

  Next, an embodiment of the radiation detector of the present invention will be described. FIG. 15 is a side sectional view of the radiation detector 40 according to the present embodiment. The radiation detector 40 receives radiation, and emits light generated by the radiation from the light exit surface 31a. The radiation detector 40 receives light emitted from the scintillator panel 31 from the light entrance surface. The above-described photodiode array 1 for conversion into the above is provided. The radiation detector 40 includes the photodiode array 1 according to the present invention.

  The scintillator panel 31 is attached to the surface side (incident surface side) of the photodiode array 1, and the photodiode array 1 is provided with the above-described transparent resin film 6 on the surface side thereof. For this reason, the back surface of the scintillator panel 31, that is, the light emitting surface 31 a contacts the transparent resin film 6, but does not directly contact the formation region of the photodiode 4. In addition, an optical resin 35 having a refractive index in consideration of light transmission characteristics is not filled between the light emitting surface 31 a of the scintillator panel 31 and the transparent resin film 6, and the scintillator panel is provided by the optical resin 35. Light emitted from 31 is efficiently incident on the photodiode array 1. As this optical resin 35, an epoxy resin, an acrylic resin, a urethane resin, a silicone resin, a fluorine resin, or the like having a property of transmitting light emitted from the scintillator panel 31 can be used, and a composite material using these as a base material is used. May be.

  When the photodiode array 1 is bonded onto a mounting wiring board (not shown), the surface is adsorbed with a flat collet. However, since the above-described transparent resin film 6 is provided on the surface of the photodiode array 1, the flat collet suction surface does not directly contact the light detection unit. The emission surface 31a does not directly contact the region where the photodiode 4 is formed. Therefore, the radiation detector 40 having such a photodiode array 1 and the scintillator panel 31 can prevent generation of noise, dark current, and the like due to damage to the photodetecting portion during mounting, and thus photodetection can be performed with high accuracy. It is possible to detect radiation with high accuracy.

It is sectional drawing which expands and shows typically the principal part of the photodiode array which concerns on embodiment. 1 is a side view of a semiconductor chip constituting a photodiode array and a cross-sectional view showing an enlarged main part thereof. It is a principal part expanded sectional view which shows the process in the middle of the manufacturing process of the photodiode array of embodiment. FIG. 4 is an essential part enlarged cross-sectional view showing a step subsequent to FIG. 3. FIG. 5 is an essential part enlarged cross-sectional view showing a step subsequent to FIG. 4. FIG. 6 is an essential part enlarged cross-sectional view showing a step subsequent to FIG. 5. FIG. 7 is an essential part enlarged cross-sectional view showing a step subsequent to FIG. 6. FIG. 8 is an essential part enlarged cross-sectional view showing a step subsequent to FIG. 7. FIG. 9 is an enlarged cross-sectional view of a main part showing a step subsequent to FIG. 8. FIG. 10 is an essential part enlarged cross-sectional view showing a step subsequent to FIG. 9. It is sectional drawing which expands and shows typically the principal part of another photodiode array which concerns on embodiment. It is sectional drawing which expands and shows typically the principal part of another photodiode array which concerns on embodiment. It is sectional drawing which expands and shows typically the principal part of another photodiode array which concerns on embodiment. It is sectional drawing which expands and shows typically the principal part of the photodiode array which has a transparent resin film with a missing part. It is sectional drawing which expands and shows typically the principal part of the radiation detector which has the photodiode array which concerns on embodiment. The state which adsorb | sucked the semiconductor chip with the collet is shown typically, (a) is sectional drawing which shows the state adsorbed by the flat collet, (b) is sectional drawing which shows the state adsorbed by the pyramid collet. It is sectional drawing which shows the photodiode array of a prior art.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Photodiode array, 3 ... n-type silicon substrate 4 ... Photodiode, 6 ... Transparent resin film, 8 ... Through wiring 9 ... Electrode wiring, 31 ... Scintillator panel 35 ... Optical resin, 40 ... Radiation detector

Claims (4)

A radiation detector comprising: a photodiode array; and a scintillator panel that is attached to the incident surface side of the light to be detected of the photodiode array and emits light by incident radiation,
A first step of forming, in a semiconductor substrate made of a semiconductor of the first conductivity type, a through-wiring that penetrates both side surfaces of the semiconductor substrate;
An impurity is added to a predetermined region on one surface of the semiconductor substrate to form a plurality of second conductivity type impurity diffusion layers, and a plurality of photodiodes formed by the impurity diffusion layers and the semiconductor substrate are arranged in an array. A second step of providing
A third step of providing a transparent resin film having a film thickness of 1 to 50 μm on the one surface side of the semiconductor substrate so as to cover at least a region where the photodiode is formed and function as a cushion layer for protecting the formation region of the photodiode; To produce a photodiode array,
Thereafter, mounting the photodiode array on a mounting wiring board;
A method of manufacturing a radiation detector, wherein the scintillator panel is mounted on the transparent resin film of the photodiode array through an optical resin that transmits light emitted from the scintillator panel. The first step includes a step of forming a plurality of holes in the semiconductor substrate, a step of forming a conductive film on at least one surface of the semiconductor substrate including the holes, and polishing the semiconductor substrate. The method for manufacturing a radiation detector according to claim 1, further comprising: removing the conductive film.   3. The radiation detector according to claim 1, further comprising a step of adding another impurity between adjacent regions to which the impurity is added to provide an impurity region of the first conductivity type after the first step. Production method. The method of manufacturing a radiation detector according to claim 1, wherein the transparent resin film has an elastic modulus of 10 to 12000 kg / cm ³ .

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