JP4776488B2 - Micro-movement mechanism device and memory device incorporating the micro-movement mechanism device - Google Patents

Description

  The present invention relates to a micro movement mechanism device having two degrees of freedom in a plane and using a plurality of recording / reproducing probe heads and a memory device on which the micro movement mechanism device is mounted.

In general, an information storage device using a plurality of probe heads arranged in a matrix is known.
A recording / reproducing material (Storage medium) is mounted on an XYZ stage (xyz scanner) having three degrees of translation. The recording / reproducing surface of this recording / reproducing material is opposed to a surface (2D Cantilever Array Chip) on which a large number of probe heads are arranged. These probe heads are connected to a signal processing circuit via a predetermined driver (Multiplex-Driver). The probe head surface and the recording / reproducing unit are relatively positioned by an XYZ stage, and a desired probe head is positioned at an arbitrary position of the recording / reproducing unit.

  As a principle of recording / reproducing using a probe head, for example, there is an example in which the principle of AFM is applied. Further, there is an example in which a topologically minute hole is formed in the recording / reproducing unit (media surface), and a change in the output signal of the probe head due to the presence or absence of the hole is defined as information “1” or “0” and recorded. This configuration has been reported based on preliminary research contents among those skilled in the art that a recording density higher than the recording density limit due to thermal fluctuation is achieved as compared with a magnetic recording apparatus represented by an HDD. The recording density limit due to thermal fluctuation indicates that the thermal fluctuation given from outside or generated inside deteriorates the stability of information and hinders the improvement in recording density.

  Similarly, this information storage device has problems in wiring integration and lithography resolution, which are problems when realizing further integration (improvement of recording density) compared to NAND flash memory, which is a typical nonvolatile memory. Problems such as the limitations of the problem have already been solved. A recording density higher than this has been reported for a recording density limit value that is expected to become apparent in the next several to ten and several years.

  In this information storage device, basically, when recording / reproducing information with the probe head, the recording density of the probe head is within a range where the signal output value level does not become a certain value or less due to interference from adjacent areas. It is determined by the resolution in the XY direction for positioning. Although the recording density limit differs depending on the recording principle, the minimum recording / reproducing bit size is several nanometers to several tens of nanometers in the conventionally proposed principles such as AFM principle diversion and thermal topological recording.

However, while the recording density is high, the information transfer rate is not necessarily higher than that of conventional devices (HDD, NAND flash memory, etc.). This is a factor that is constrained by the time required to write / read information on the principle of recording / reproduction, and the probe head with high precision X- It includes factors that are constrained by constraints on mechanical response time and control time required for positioning in the Y plane. As a countermeasure, the probe head is not a single unit, but the recording medium unit placed on the XYZ stage mechanism is accessed in parallel by the drive unit using an array having a large number of probes. An information storage device configured to improve the transfer rate has been proposed.
US 2004 / 0019757A1 USP 5,835,477

  Although the probe array memory as described above has not reached the practical level, the basic configuration itself is different from the current storage mechanism, and it is expected to be a breakthrough technology that greatly extends the recording density limit.

  However, in the current proposal, when it is put into practical use, the configuration is accompanied by peripheral mechanisms such as an actuator mechanism and a stage mechanism that position the probe array with high accuracy. In other words, the recording / reproducing principle and the vice alone can be expected to show a very high recording / reproducing density, but the recording / reproducing density is not necessarily high when viewed from the size (mounting area) of the entire system including the peripheral mechanism. This is a factor that hinders downsizing and integration of the memory size.

  In particular, in the configuration using an electromagnetic actuator as a conventional XY stage, the ratio of the coil / magnet portion of the electromagnetic actuator is higher than the recording media portion in terms of the size of the entire storage device. Preventing downsizing. This is because an actuator area of a certain volume or more is required to satisfy both the generated force required for the actuator and the moving distance.

  Accordingly, an object of the present invention is to provide a micro-movement mechanism device having high torque and generating force, and a memory device equipped with the micro-movement mechanism device, with a reduced mounting area with respect to the overall size of the storage device. To do.

To achieve the above object, a piezoelectric material portion supported on the fixed portion by the elastic member, a piezoelectric drive unit consists of a voltage generator for applying a driving voltage of a predetermined pattern prior Symbol piezoelectric material portion, An electrode portion provided in contact with the piezoelectric material portion; and an electrostatic drive portion that applies a driving voltage of a predetermined pattern to the electrode portion, and is hierarchical with respect to the piezoelectric material portion and the electrode portion. The piezoelectric material portion that is ultrasonically vibrated is opposed to and brought into contact with the driving surface of the driven object placed on the electrode, and the piezoelectric material portion is placed on the driven surface by controlling the voltage applied to the electrode portion . A micro-movement mechanism device characterized by changing a force pressed against a driven object to move the driven object in an arbitrary direction.
A micro-movement mechanism device is provided.

Further, a piezoelectric material portion supported on the fixed portion of the frame-shaped, the front SL and a voltage generator for applying a driving voltage of a predetermined pattern on the electrode portions in the piezoelectric material portion, a piezoelectric driving unit composed of the piezoelectric There are a plurality of electrode parts provided in contact with the material part, an electrostatic drive part for applying a predetermined voltage pattern to the electrode part, and a plurality of recording / reproducing probes provided on the inner side of the frame-shaped fixing part and having protrusions. the arrangement probe array, said to be disposed probes array portion opposite the hierarchical, is supported on the fixed portion of an elastic member, and a recording and reproducing unit having a record capable recording surface information, before A signal processing circuit for processing information read by the recording / reproducing probe from the recording surface of the recording / reproducing unit, and the piezoelectric material unit that vibrates ultrasonically with respect to the recording surface of the recording / reproducing unit. Opposing and touching By controlling the applied voltage to the electrostatic drive unit to the electrode portion provided, said piezoelectric material part is to change the force for pressing the recording and reproducing unit, moving the recording and reproducing unit in any direction Thus, a memory device equipped with a micro-movement mechanism device characterized by acquiring desired information is provided.

  According to the present invention, a mounting area is reduced with respect to the overall size of a storage device, and a micro-movement mechanism device having high torque and generating force and a memory device equipped with the micro-movement mechanism device are provided. Can do.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
FIG. 1 is a diagram illustrating a schematic configuration of a minute movement mechanism device 1 according to the first embodiment.
The micro-movement mechanism device 1 is configured to form a stage mechanism by a probe array 2 in which a plurality of recording / reproducing probes arranged in the center are arranged and an actuator unit 3 arranged in four directions around the probe array 2. These are formed using semiconductor manufacturing technology, MEMS (Micro Electro Mechanical System) technology, or the like.

  The actuator portion 3 is provided with a rectangular support arm portion 6 so as to surround the four sides of the probe array 2, and at least four piezoelectric actuators are provided at the center of each of the support arms. In FIG. 1, a probe array 2 is supported by a support arm unit 6 on a recording medium unit 4 on which a medium surface 4 a having a layer for recording and reproduction is formed. Are arranged hierarchically so as to face each other. In the probe array 2, a large number of probes 5 are arranged, for example, in a matrix at an arbitrary interval.

The piezoelectric actuator includes a piezoelectric element and an electrode. In the embodiment, X-axis piezoelectric actuators 7a and 7b are provided on two opposing sides, respectively, and Y-axis piezoelectric actuators 8a and 8b are provided on two sides orthogonal to these. Each piezoelectric actuator is provided with a Z-axis electrostatic actuator 9. As described above, the probe 5 has the shape of a cantilever needle (or protrusion) to which the AFM principle is applied, and the tip of the needle is uneven in a hole or groove formed in the media surface (recording surface) 4a. As a result, the information consisting of “1” and “0” is read up and down. In the case of a cantilever needle, it is used in the attractive force region or the repulsive force region, and is detected as data “1” or “0” based on the variation (position). These recording / reproducing probes (hereinafter referred to as probes) 5 are attached to a probe housing provided with wirings for connection to a signal processing circuit (hereinafter referred to as a CMOS circuit) using a CMOS technology which will be described later. The detection signal (information signal) generated by the fluctuation of the probe 5 is transmitted.

  At the four corners of the support arm portion 6, four support columns 6a serving as fixing portions are provided, and the four corners of the superimposed CMOS circuit substrate portion 10 are fixed. The CMOS circuit 12 formed on the CMOS circuit board portion 10 processes the information signal received from each probe 5. Further, the CMOS circuit substrate unit 10 is also provided with a voltage generator (driver circuit) that applies a predetermined pattern of driving voltage to the actuator unit 3. Note that the voltage generator does not necessarily have to be provided integrally with the CMOS circuit substrate unit 10, and a different substrate may be provided separately. In the case of this separate substrate, it is provided hierarchically on the upper side or the lower side of the CMOS circuit substrate unit 10. In the following description, a component part in which the CMOS circuit board part 10, the probe array 2, and the actuator part 3 are mounted and integrated is referred to as an actuator side board 11.

  The probe surface on which the probe 5 of the actuator side substrate 11 is disposed and the media surface 4a of the media substrate 4 are held at a uniform distance (interval). Further, the pressing force between the piezoelectric actuators 7a, 7b, 8a, 8b and the media surface 4a is adjusted by using the electrostatic actuator 9, and the propulsive force is adjusted by the piezoelectric actuators 7a, 7b, 8a, 8b. . Using these electrostatic actuator 9 and piezoelectric actuators 7a, 7b, 8a and 8b, the probe 5 is operated so as to be at an appropriate reading position and an appropriate distance with respect to the media surface 4a.

  Next, with reference to FIG. 2A and FIG. 2B, the operation of each of the piezoelectric actuator 7a and the electrostatic actuator 9 will be described as a representative. In these constituent parts, parts that are the same as the constituent parts shown in FIG.

  2A and 2B show components related to the stage mechanism of the micro-movement mechanism device 1 shown in FIG. In this configuration, for example, the recording medium portion 4 made of Si, the actuator portion 3 (piezoelectric actuators 7a, 7b, 8a, 8b and the electrostatic actuator 9) made of a piezoelectric material and a metal material, the elastic support portion 21, and a predetermined portion A piezoelectric driver unit 22 that applies a pattern driving voltage, an electrostatic driver 23 that applies a predetermined pattern driving voltage, a controller unit 24 that controls the entire system, and a position sensor 25 are shown.

  The elastic support portion 21 has an elastic shape such as a spring, and the actuator side substrate 11 (the CMOS circuit substrate 10 (see FIG. 1), the probe array 2 and the actuator portion 3) is elastically mounted in a plurality of directions from at least four directions. (Or suspended) to support. Further, the actuator-side substrate 11 can be formed to be pressed against the recording media unit 4 with a certain force. In this example, electrodes serving as the electrostatic actuator 9 are provided on both ends of the piezoelectric actuator 7a or on the periphery thereof. Further, the elastic support portion 21 is made of a coil-shaped spring or a plate-shaped spring made of a silicon material such as Si or Poly-Si, a metal, or a non-metal material.

  The position sensor 25 is provided between the recording medium unit 4 and the actuator unit 3, and determines a reference position (for example, the origin of the XY coordinates) at any position, and between the current position with respect to the origin and the target position. The horizontal distance and the twist amount (obtained by the distance difference) inside the XY plane are calculated. The position sensor 25 may be, for example, a capacitance type sensor that is disposed at the four corners of the recording medium unit 4, measures the capacitance of each of the position sensors 25, and uses the amount of deviation with respect to the detection unit provided oppositely. . In addition, since the thermal conductivity changes due to the change in the opposed area, a heat quantity utilization type sensor or the like that uses the detection of the deviation amount of the detectors provided in the same manner can be used. The position sensor 25 measures the position (on the XY plane) and the distance (Z direction) between the probe 5 and the media surface 4a.

  In such a configuration, as shown in FIG. 2A, when there is no or weak force generated by the electrostatic actuator 9 (force in the approaching direction), pressing between the piezoelectric actuator 7 a and the recording media unit 4 is performed. The force becomes weaker and the generated force transmitted to the recording media unit 4 becomes smaller. On the other hand, as shown in FIG. 2B, when the generated force of the electrostatic actuator 9 is large, the pressing force that works so that the piezoelectric actuator 7 a is pressed against the recording medium unit 4 becomes strong and is transmitted to the recording medium unit 4. Generating power increases.

As described in the problem, the size of the entire system varies greatly depending on the support structure of the movable part provided with the piezoelectric actuator and the electrostatic actuator and the presence or absence of the guide mechanism. In the present embodiment, it is hierarchically arranged to overlap seen product a piezoelectric actuator on the media surface, characterized by having a large torque (generated force) weight ratio, conventional movable portion of the support structure and guide mechanism This eliminates the need for space saving of the mounting area and the size of the entire system can be reduced.

In addition, the piezoelectric actuator has a trade-off that the generated force is large but the displacement is small. In the present embodiment, a so-called operation principle of a known ultrasonic motor is used for the movement of the probe array 2. This principle of operation is friction driven using ultrasonic vibration. Since the object pressed against the vibrating body to which the ultrasonic wave is applied has an ultrasonic frequency higher than the time constant of movement, the object comes into contact only at a position having an amplitude of one cycle of the ultrasonic wave. If this contacted part makes an elliptical motion or a rectilinear motion, the object receives a thrust. The speed and displacement in this propulsion can control the drive voltage waveform.In this embodiment, the transmission force changes depending on the pressing force between the piezoelectric material part that is displaced and vibrated at high speed and the driven object. I am letting. In other words, the adjustment of the pressing force is realized by using an electrostatic actuator that has good manufacturability in a minute region for adjusting the transmission force. By combining these piezoelectric actuators and electrostatic actuators, and adjusting the pressing force between the piezoelectric actuator and the driven object by the suction force of the electrostatic actuator, the probe array 2 can be freely moved in a space-saving manner, A minute movement mechanism (stage mechanism) having a high torque generation force can be realized.

Next, the operation of the fine movement mechanism device 1 will be described with reference to the flowchart shown in FIG.
First, the target position information (coordinate information or address information) is instructed to the controller unit 24 of the stage mechanism regarding the read position the probe 5 is desired to information media surface 4a which addressed cracking is recorded (step S1) .

  Next, a current position is obtained from a detection signal from a position sensor 25 provided between the recording medium unit 4 and the actuator unit 3 (step S2), and a distance to the instructed target position is calculated (step S3). Further, the amount of twist in the XY plane is calculated (step S4). The generated transmission force to the piezoelectric actuators 7a, 7b, 8a, and 8b arranged in the X direction and the Y direction is obtained by comparing the distance to the target value and the twist information with a table for recording information.

  In this table, the relationship between the voltage value previously applied to the piezoelectric element and the pressing force with which the piezoelectric actuator itself is pressed against the recording medium unit 4 is set as a parameter for the piezoelectric actuators 7a, 7b, 8a, and 8b. This indicates information on how much transmission force is generated by the voltage value to be applied, and is set in a table in the data provided by the processing program that is empirically obtained in advance through experiments or the like. deep.

  As a parameter set in this table, the electrostatic actuator 9 is similarly set. Information on how much pressing force is generated in consideration of the rigidity of the elastic body that is elastically supported with respect to the voltage value applied to the electrode of the electrostatic actuator 9 is measured through experiments or the like. Or obtained by simulation and set in the table.

  Through the search process (lookup table) for these two tables, the respective input voltage values to the piezoelectric actuators 7a, 7b, 8a, 8b and the electrostatic actuator 9 are determined (steps S5, S6), and the drivers 22, 23 is driven. Information is acquired from the position sensor 25 at regular time intervals (step S7), and it is determined whether or not the current position and the twist amount have converged within a set allowable error range with respect to the initial target value. (Step S8). In this determination, when convergence is within the set allowable error range (YES), it is determined that the target position has been reached, and the operations of the piezoelectric actuators 7a, 7b, 8a, 8b and the electrostatic actuator 9 are stopped ( Step S9). On the other hand, if it does not converge within the set allowable error range (NO), it is determined that the target position has not been reached, the process returns to step S3, the distance calculation and the twist calculation are executed again, and a similar sequence is performed. Is repeated until the target position is reached. For reaching the target position, the distance calculation and the twist calculation execution are not performed infinitely, but if the target position is not reached even if the predetermined number of times is re-executed, a process of processing as an error is performed. It may be included.

  As described above, the micro-movement mechanism device 1 according to the present embodiment is arranged so that the recording medium unit 4, the probe array 2 (including the actuator unit 3), and the CMOS circuit board unit 10 are layered. The actuator unit 3 can move the probe array 2 with respect to the recording media unit 4 using the known principle of operation of an ultrasonic motor to reach the probe 5 to a desired storage position (target position). . With such a configuration, the moving state and moving direction of the probe array 2 can be controlled by the strength of the pressing force of the actuator unit 3. Therefore, the movable portion supporting structure and guide mechanism, which are conventionally required, are not required, and are configured in a hierarchical structure. Therefore, long distance movement is eliminated, and the size (mounting area) of the entire system can be reduced.

Next, a second embodiment will be described.
The present embodiment has the same configuration as that of the first embodiment described above, and the operation is different.
In the first embodiment described above, when there is no or little suction force by the electrostatic actuator, the pressing force between the piezoelectric actuator and the recording medium is reduced. Therefore, the pressing force between the recording medium and the piezoelectric actuator (each piezoelectric element) is increased by increasing the suction force of the electrostatic actuator.

  In the second embodiment, it is sufficient to generate the transmission force of the piezoelectric actuators 7a, 7b, 8a, and 8b due to the effects such as the initial residual stress generated in the elastic support 21 that supports the actuator-side substrate 11 shown in FIG. 2A. The actuator unit 3 is pressed against the recording media unit 4 with a force of a halved magnitude. Therefore, by changing the direction in which the suction force of the electrostatic actuator 9 is generated in the opposite direction, the suction force is used to reduce the pressing force between the recording medium 4 and the actuator unit 3. Therefore, in this embodiment, the driving force can be controlled by causing the pressing force between the piezoelectric actuator and the recording medium by the elastic support member 21 to be alleviated by the suction force of the electrostatic actuator 9.

Next, a third embodiment will be described. 4A and 4B show a schematic configuration of a micro movement mechanism device 31 according to the third embodiment. FIG. 4A shows a cross-sectional configuration example of the small movement mechanism device 31, and FIG. 4B shows a front configuration viewed from above the recording media unit 32.
The small movement mechanism device 1 according to the first and second embodiments described above has a configuration in which the force is pressed by the electrostatic actuator 9. On the other hand, in the third embodiment, as shown in FIG. 4A, in the recording media part 32, the inner media part 32b having a media surface is elastically held by the elastic body part 32c with respect to the outer peripheral part 32a. It is a configuration. The recording media part 32 is elastically held by the elastic body part 32 c and presses the media surface against the actuator side substrate 11 with a constant force by the actuator part 3.

  The micro movement mechanism device 31 is formed using a semiconductor manufacturing technique, a MEMS technique, or the like. The actuator side substrate 11 (the CMOS circuit substrate unit 10, the probe array 2, and the actuator unit 3) and the recording media unit 32 are superposed.

  As shown in FIG. 4B, the recording medium unit 32 includes a support frame 32 a on the outer periphery joined to the actuator side substrate 11 and the sealing substrate 33, and a medium having a media surface that is relatively moved by the transmission force from the actuator unit 3. The portion 32b and the elastic body portion 32c that elastically supports the media portion 32b with respect to the support frame 32a are integrally configured. In order to give strength to the support frame 32a and to make the media part 32b agile in movement, the support frame 32a is appropriately thickened, and the media part 32b is suitably thinner than the thickness. . These thicknesses may be obtained empirically by simulation or actual measurement.

  In this configuration, the support frame 32a, the media portion 32b (the substrate portion excluding the media surface), and the elastic body portion 32c are formed using the same member using a semiconductor manufacturing technology, a MEMS technology, or the like. It is also possible to form the elastic body portion 32c using a member different from the support frame 32a and the media portion 32b and to join both ends to the support frame 32a and the media portion 32b. As a specific configuration example, as shown in FIG. 4B, an elastic body portion 32c, for example, an L-shaped spring extends from the vicinity of each corner inside the support frame 32a, and a media portion on the opposite corner side in the support portion 32a. It is formed so as to be connected to the four corner ends of 32b.

  The micro-movement mechanism device 31 configured as described above has the actuator-side substrate 11 fixed, and is elastically supported by an L-shaped spring formed by punching the media surface of the inner peripheral portion 32b into a U-shape. The recording medium unit 32 is moved by the actuator unit 3. Therefore, the recording media unit 32 is lighter than the actuator-side substrate 11 and has a quick response to movement, which is useful for shortening the movement to the reading position and reducing power consumption. Further, the recording media portion 32 can be formed on a silicon wafer by a series of manufacturing processes using semiconductor manufacturing technology, MEMS technology, or the like.

Next, a micro movement mechanism device according to a fourth embodiment will be described.
5A to 5D show configuration examples of the piezoelectric actuator and the electrostatic actuator in the actuator unit 40. FIG.

In this configuration example, as shown in FIGS. 5B and 5C, the actuator unit 40 has a rectangular frame shape, and each side has a beam structure (beam unit) 41 that rises from the four corners of the fixed unit to the fixed unit. It is. In the center of each beam portion 41, a piezoelectric actuator (piezoelectric element portion 42a and stripe drive electrode 42b) 42 is formed. On both sides of the piezoelectric actuators 42 are formed elastic portions 43 that are punched in a comb shape so as to have elasticity. Below these beam portions 41, electrodes 44 of electrostatic actuators are formed. The probe array 2 is provided in a rectangular frame of the actuator unit 40. Furthermore, a circuit (electrostatic driver) is connected between the electrode 44 of the electrostatic actuator and the beam unit 41 through the GND by the switch 45 and the DC power source 46. It is formed. By closing the switch 45, a voltage is applied between the electrode 44 of the electrostatic actuator and the beam portion 41, and an attractive force is generated. A piezoelectric driver (not shown) is also connected to the piezoelectric actuator 42.

The manufacturing process of this actuator part 40 is demonstrated.
First, a metal film is formed on the silicon (Si) substrate 51 by vapor deposition or the like, and unnecessary portions are removed by an etching process to form the electrode 44 of the electrostatic actuator. Further, a sacrificial layer 52 is formed so as to cover the electrode 44. Since the sacrificial layer 52 is removed at the final stage, for example, if polyimide, which is a mask material that can be easily formed and removed, is used, it can be formed by a photolithography technique. The sacrificial layer 52 is not limited to polyimide.

  Next, as a film formation technique, for example, a polysilicon (Poly-Si) film 53 and a metal film 54 are formed on the entire surface of the Si substrate 51 including the sacrificial layer 52 by CVD or vapor deposition. . Further, after forming a polyimide mask (not shown) thereon, the metal film 54 is selectively etched to form a stripe drive electrode 42b of the piezoelectric actuator as shown in FIG. 5D. Further, the polysilicon film 53 is selectively etched to form a frame shape, and further, an elastic portion 43 cut into a comb shape is formed on both sides of each side. Further, the piezoelectric element portion 42a is formed so as to cover the stripe drive electrode 42b of the piezoelectric actuator.

  Thereafter, the sacrificial layer 52 is removed using a wet etching process, and the lower part of the beam part 41 (between the Si substrate 51) is made hollow so that the beam part 41 is elastically supported by the elastic part 43. Make the structure. In addition, as a material of the metal film used for the electrode etc. mentioned above, metal materials, such as aluminum, an aluminum alloy, copper, or an alloy containing copper, are suitable.

  In the present embodiment, similarly to the above-described effects of the first embodiment, when the electrostatic actuator does not have a generated force, or when the generated force is small, the pressing force between the piezoelectric element and the recording medium is weak. The transmission power to the recording media part is small.

  Further, in the present embodiment, the force generated by the electrostatic actuator can be used to increase the pressing force between the piezoelectric element and the recording medium.

Next, a minute movement mechanism device according to a fifth embodiment will be described.
In the fourth embodiment described above, when there is no or little suction force by the electrostatic actuator, the pressing force between the piezoelectric actuator and the recording medium is reduced, and the suction force of the electrostatic actuator is reduced between the recording medium and the piezoelectric element. The pressing force was increased.

  In the fourth embodiment, the piezoelectric actuator 42 is moved relative to the recording medium portion side with respect to the elastic portion 43 that supports the beam portion 41 provided with the piezoelectric actuator 42 due to an effect such as initial residual stress. It is pressed with a sufficient size to generate the transmission force. By reversing the direction in which the suction force of the electrostatic actuator is generated (the direction opposite to the pressing direction), the pressing force between the recording medium and the piezoelectric actuator is reduced and the probe array 2 can be moved. Can do.

Next, with reference to FIGS. 6A and 6B, a first memory device (information storage device) on which the micro-movement mechanism device according to the above-described embodiment is mounted will be described. Among the above-described embodiments, the circuit board (for example, a printed wiring board) of the memory device 60 combined with the recording media unit 32, with the micro movement mechanism device 31 according to the third embodiment shown in FIG. 4 as a representative example. A configuration that can be implemented is described below.
The memory device 60 shown in FIGS. 6A and 6B is formed in a sealing structure in which three wafer members 61, 62, and 63 are overlapped and joined together.

  The first wafer member 61 includes an actuator side substrate 11 provided with the actuator unit 3, the probe array 2, a CMOS circuit (probe selection switch) substrate unit 10 and the like. In the actuator side substrate 11, a plurality of vias 65 penetrating from the mounting surface (inner side surface) on which the probe array 2 and the CMOS circuit board unit 10 etc. are mounted to the non-mounting surface (device exterior surface) are opened as necessary. A bump (or solder ball) 66 on the outer surface of the device is formed by filling with wiring metal, and a lead electrode is formed. These vias 66 are connected to the actuator unit 3, the probe array 2, and the input / output terminals of the CMOS circuit through the vias 65.

The second wafer member 62 includes a rectangular support frame (fixed part) 32a on the outer periphery, a media part 32b having a media surface that is relatively moved by the transmission force from the actuator unit 3, and the media part 32b. It is comprised with the elastic-body part 32c elastically supported with respect to 32a.
The third wafer member 63 and the second wafer member 62 are constituted by a sealing portion 64 made of a flat substrate.

  As shown in FIG. 6A, in the support frame 32a on the outer periphery, the fixed portions on the front and back surfaces of the four corners are provided with joint portions 32d made of a metal layer having a low melting point provided by vapor deposition or the like. Further, when combined with the actuator side substrate 11, the joint portion 11 a is also provided in the fixed portion of the actuator side substrate 11 (actuator portion 3) facing the joint portion 32 d, and the joint portion is similarly provided in the sealing portion 64. 64a is provided. These joining portions 32d are welded by heat treatment while the joining portions 11a and 64a are brought into contact with each other. By this welding, as shown in FIG. 6B, the first wafer member 61, the second wafer member 62, and the third wafer member 63 are joined together in a secret manner, and the memory device (information storage device) 61 is connected. Make up.

As shown in FIG. 7, the memory device 60 configured in this manner is flipped to a pad 68 provided on the board as a memory device on a printed circuit board 67, for example, a mother board of information equipment represented by a personal computer. It is mounted by chip bonding and is electrically connected to other circuit components such as a read / write control unit (IC) 69.
As described above, the information storage device using the micro-movement mechanism device according to the embodiment has a configuration in which the actuator side substrate 11 (CMOS circuit, probe array 2 and actuator unit 3) and the recording medium unit 32 are superimposed. Therefore, it is possible to mount directly on the circuit board as a mounting component simply by forming connection electrode terminals and bumps on the non-mounting surface (exterior surface) of the actuator side substrate 11, and in addition, the mounting area is compact. The mounting layout on the wiring board is easy. Further, the sealing substrate 64 can be easily functioned as a package of a memory device by being bonded to the recording medium unit 32 and sealed. In particular, the memory device 60 having such a configuration is suitable as a mounting device that can be bent, such as a flexible substrate.

  Next, the second memory device shown in FIG. 8 is configured to be sealed with a resin package. This configuration example will be described as an example using the micro-movement mechanism device 31 according to the third embodiment, similarly to the first memory device described above.

  In the memory device 71, the above-described minute moving mechanism device 31 is bonded and fixed on a die pad 72. The lead 73 provided on the resin substrate provided with the die pad 72 is connected to the bonding pad 66b by wire bonding using a lead wire 74. After frame connection by wire bonding is completed, a resin sealing portion 75 made of mold resin is formed so that the memory device 71 is completely covered. However, as shown in FIG. 8, the movable range of the recording medium unit 32 in the actuator is not resin-sealed.

The memory device 71 is mounted on the wired circuit board 67 and is electrically connected to circuit components of the wired circuit board 67, for example, a read / write control unit (IC) 69.

  As described above, there are a plurality of actuators having a greater torque (generated force) weight ratio than conventional actuators. However, the size of the entire system varies greatly depending on how the movable part is provided with a support / guide mechanism.

  The micro-movement mechanism device described in each embodiment uses a piezoelectric actuator characterized by having a large torque (generated force) weight ratio, and is not arranged in the XY plane, but in the Z direction (superimposition direction). By implementing the above arrangement, it is possible to reduce the mounting size of the entire system. Piezoelectric actuators have a trade-off of large generated force but small displacement. Therefore, in this principle (so-called ultrasonic motor drive), which applies the principle of the so-called ultrasonic motor, the member provided with the piezoelectric actuator that displaces and vibrates at high speed and the recording media part that is the driven object are pressed. It is known that the transmission force changes due to the above, that is, the member provided with the piezoelectric actuator moves in the plane direction. A probe array is connected and fixed to this member. The pressing force is adjusted by further adding an electrostatic actuator that is easy to manufacture to this member. By combining these piezoelectric actuators and electrostatic actuators, and adjusting the pressing force between the piezoelectric actuator and the recording media section by the suction force of the electrostatic actuator, either one can move in a plane and the probe array ( The recorded information can be read by moving the probe to a desired target position and appropriately bringing the probe into contact with or close to the media surface. Thus, by arranging the actuator portion in the superimposing direction and driving the probe array, it is possible to realize a micro-movement mechanism device (stage mechanism) that saves space and has high torque and generating force.

It is a figure which shows schematic structure of the micro movement mechanism apparatus 1 which concerns on 1st Embodiment. It is a figure which shows the structure part relevant to the stage mechanism of the micro movement mechanism apparatus 1 shown in FIG. It is a figure which shows the structure part relevant to the stage mechanism of the micro movement mechanism apparatus 1 shown in FIG. It is a flowchart for demonstrating operation | movement of a micro movement mechanism apparatus. It is a figure which shows schematic structure of the micro movement mechanism apparatus 31 which concerns on 3rd Embodiment. It is a figure which shows schematic structure of the micro movement mechanism apparatus 31 which concerns on 3rd Embodiment. It is a figure for demonstrating the micro movement mechanism apparatus of 4th Embodiment. It is a figure for demonstrating the micro movement mechanism apparatus of 4th Embodiment. It is a figure for demonstrating the micro movement mechanism apparatus of 4th Embodiment. It is a figure for demonstrating the micro movement mechanism apparatus of 4th Embodiment. It is a figure which shows the structural example of the 1st information storage device which mounts a micro movement mechanism apparatus. It is a figure which shows the structural example of the 1st information storage device which mounts a micro movement mechanism apparatus. It is a figure which shows the state which mounted the board | substrate on the 1st memory device. It is a figure which shows the state which mounted the board | substrate on the 2nd memory device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Micro movement mechanism apparatus, 2 ... Probe array, 3 ... Actuator part, 4 ... Recording media part, 4a ... Media surface, 5 ... Probe, 6 ... Support arm part, 7a, 7b ... X-axis piezoelectric actuator, 8a, 8b ... Y-axis piezoelectric actuator, 9 ... Z-axis electrostatic actuator, 10 ... CMOS circuit board part, 11 ... Actuator side board, 12 ... CMOS circuit.

Claims (8)

A piezoelectric material portion supported on the fixed portion by the elastic member, a piezoelectric drive unit consists of a voltage generator for applying a driving voltage of a predetermined pattern prior Symbol piezoelectric material portion,
An electrode part provided in contact with the piezoelectric material part, an electrostatic drive part for applying a drive voltage of a predetermined pattern to the electrode part ,
Comprising
Relative to the piezoelectric material portion and the electrode portion, the drive surface of the hierarchically arranged driven object, the piezoelectric material portion to ultrasonic vibrations are opposed, arranged and in contact, to the electrode portions The movement of the driven object is moved in an arbitrary direction by changing the force for pressing the piezoelectric material portion against the driven object by controlling the applied voltage value of Mechanical device. Is supported on the fixed portion by the elastic member, with the driving surface of the hierarchically oppositely disposed driven object, a piezoelectric material portion to be pressed by a force due to the action of the stress of the elastic member, before Symbol piezoelectric material portion A voltage generating unit for applying a predetermined voltage pattern; and a piezoelectric driving unit configured by:
An electrode part provided in contact with the piezoelectric material part, an electrostatic drive part for applying a drive voltage of a predetermined pattern to the electrode part ,
Comprising
The piezoelectric material portion that is ultrasonically vibrated is opposed to and in contact with the drive surface of the driven object, and the voltage applied to the electrode portion provided in the electrostatic drive portion is controlled by controlling the voltage applied to the electrode portion . A micro-movement mechanism device, wherein a force for pressing a piezoelectric material portion against the driven object is changed to move the driven object in an arbitrary direction. In a piezoelectric material portion being hierarchically arranged opposite to the driving surface of the driven object to be supported by the fixed portion by the elastic member, and a voltage generator for applying a predetermined voltage pattern before Symbol piezoelectric material portion, A configured piezoelectric drive; and
An electrode part provided in contact with the piezoelectric material part, an electrostatic drive part for applying a drive voltage of a predetermined pattern to the electrode part ,
Comprising
Wherein with the driving surface of the driven object, the piezoelectric material portion to ultrasonic vibrations are opposed, and placed in contact, the said driven object by controlling the applied voltage to the pre-Symbol electrodes portion A micro-movement mechanism device, wherein the driven object is moved in an arbitrary direction by changing a force pressed against the piezoelectric material portion . Furthermore, it comprises a plurality of position sensors provided between the drive surface of the driven object and the piezoelectric drive unit, and each of the current positions with reference to a predetermined reference position is measured. 4. The piezoelectric drive unit according to claim 1, wherein the piezoelectric drive unit is corrected in parallel to the drive surface based on a distance difference with respect to a horizontal distance to a reference target position. The micro movement mechanism apparatus as described in any one. A piezoelectric material portion supported on the fixed portion of the frame shape by elastic members, and the piezoelectric drive unit composed of a front SL voltage generating unit for applying a driving voltage of a predetermined pattern on the piezoelectric material portion,
An electrode part provided in contact with the piezoelectric material part, an electrostatic drive part for applying a drive voltage of a predetermined pattern to the electrode part ,
A probe array portion provided inside the frame-shaped fixed portion, and a plurality of recording / reproducing probes having protrusions,
Said probe array to face arranged hierarchically, the recording and reproducing unit having a record capable recording surface information,
A signal processing circuit for processing the recording information reproducing probe is read from the recording surface of the front type recording reproducing unit,
Comprising
The piezoelectric material portion that is ultrasonically vibrated is opposed to and brought into contact with the recording surface of the recording / reproducing portion , and the piezoelectric device is controlled by controlling the voltage applied to the electrode portion provided in the electrostatic drive portion. A memory device equipped with a micro-movement mechanism device, wherein a desired force is acquired by changing a force pressing a material portion against the recording / reproducing unit and moving the recording / reproducing unit in an arbitrary direction. Is supported on the fixed portion by the elastic member, predetermined with respect to the recording surface of the recording and reproducing unit that is hierarchically arranged opposite, a piezoelectric material portion to be pressed by a force due to the action of the stress of the elastic member, before Symbol piezoelectric material portion A voltage generating unit for applying a driving voltage for the pattern, and a piezoelectric driving unit comprising:
An electrode portion provided on the opposite surface of the piezoelectric material portion to the surface facing the recording surface; an electrostatic drive portion that applies a predetermined voltage pattern to the electrode portion ;
A probe array portion in which a plurality of recording / reproducing probes having protrusions on the surface of the piezoelectric material portion facing the recording surface are disposed;
A signal processing circuit for processing the recording information reproducing probe is read from the previous type recording surface,
Comprising
The piezoelectric material portion that is ultrasonically vibrated is disposed opposite to and in contact with the recording surface, and the piezoelectric material portion is controlled by controlling a voltage value applied to the electrode portion provided in the electrostatic drive portion. A memory device equipped with a micro-movement mechanism device, wherein a desired force is acquired by changing a force pressed against a recording / reproducing unit and moving the recording / reproducing unit in an arbitrary direction. A piezoelectric material portion supported on the fixed portion of the frame-shaped, the front SL and a voltage generator for applying a driving voltage of a predetermined pattern on the electrode portions in the piezoelectric material portion, the piezoelectric drive unit composed of,
An electrode part provided in contact with the piezoelectric material part, an electrostatic drive part for applying a predetermined voltage pattern to the electrode part ,
A probe array portion provided inside the frame-shaped fixed portion, and a plurality of recording / reproducing probes having protrusions,
Said to be hierarchically arranged opposite to the probe array portion is supported on the fixed portion by the elastic member, the recording and reproducing unit having an information record available recording surface,
A signal processing circuit for processing the recording information reproducing probe is read from the recording surface of the front type recording reproducing unit,
Comprising
The piezoelectric material portion that is ultrasonically vibrated is opposed to and brought into contact with the recording surface of the recording / reproducing portion , and the piezoelectric device is controlled by controlling the voltage applied to the electrode portion provided in the electrostatic drive portion. A memory device equipped with a micro-movement mechanism device, wherein a desired force is acquired by changing a force with which a material unit presses against the recording / reproducing unit, and moving the recording / reproducing unit in an arbitrary direction. And a plurality of position sensors provided between the recording / reproducing unit and the piezoelectric driving unit, each of which measures a current position based on a predetermined reference position, and a target based on the reference position 8. The method according to claim 5, wherein the surface of the probe array is corrected in parallel to the recording surface based on a distance difference with respect to a horizontal distance to the position. The memory device described.

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