JP4768749B2 - トランスバース装置アレイラジエータの電子的に走査されたアンテナ - Google Patents
トランスバース装置アレイラジエータの電子的に走査されたアンテナ Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
- H01Q13/20—Non-resonant leaky-waveguide or transmission-line antennas; Equivalent structures causing radiation along the transmission path of a guided wave
- H01Q13/28—Non-resonant leaky-waveguide or transmission-line antennas; Equivalent structures causing radiation along the transmission path of a guided wave comprising elements constituting electric discontinuities and spaced in direction of wave propagation, e.g. dielectric elements or conductive elements forming artificial dielectric
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
- H01Q13/20—Non-resonant leaky-waveguide or transmission-line antennas; Equivalent structures causing radiation along the transmission path of a guided wave
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Description
以下の詳細な説明および幾つかの図面では類似の素子は類似の参照符合で識別される。
Claims (25)
- それぞれスタブラジエータを規定する連続的なトランスバーススタブのセットを有する上部導電性プレート構造と、
この上部導電性プレート構造に関して間隔を隔てられた関係で配置されている下部導電性プレート構造と、
電磁エネルギの伝播のためにオーバーモードの導波管媒体を上部導電性プレート構造及び下部導電性プレート構造と共に規定する側壁プレート構造とを具備し、
前記各トランスバーススタブに対しては、1以上のトランスバース装置アレイ(TDA)位相シフタが配置されている連続的なトランスバーススタブを放射素子として使用するアンテナアレイ。 - 前記1以上のTDA位相シフタは複数の縦続配置されたTDA位相シフタを含んでいる請求項1記載のアレイ。
- 前記1以上のTDA位相シフタはそれぞれ、その上に規定されている回路を有するほぼ平坦の誘電体基板と、それぞれ電圧可変リアクタンスを有する複数の間隔を隔てられているディスクリートな半導体ダイオード素子を含む回路と、スタブラジエータの側壁表面に対して横断方向であるスタブラジエータ内に配置されている基板とを具備し、
前記電圧可変リアクタンスに影響を与える逆バイアス電圧を与えるバイアス回路と、
スタブラジエータを通って伝播するマイクロ波またはミリメートル波エネルギの位相に変化を生じさせる逆バイアス下のTDA位相シフタとを具備している請求項1記載のアレイ。 - 前記1以上のTDA位相シフタはスタブラジエータ内で間隔を隔てられた関係で複数の縦続された位相シフタを含んでいる請求項3記載のアレイ。
- 各TDA位相シフタは誘電体基板を具備し、前記複数のTDA位相シフタのそれぞれの基板は並列に整列して配置されている請求項3記載のアレイ。
- オーバーモードの導波管媒体は、均質で等方性の誘電体材料で充填されている請求項1記載のアレイ。
- 側壁プレート構造は、アレイの動作中心周波数の波長の“N”倍であるように選択された広い幅の壁の寸法を有している請求項1記載のアレイ。
- TDA位相シフタはディスクリートな半導体ダイオードを含んでいる請求項1記載のアレイ。
- ディスクリートな半導体ダイオードはバラクタダイオードまたはショッツキダイオードまたは電圧可変キャパシタを含んでいる請求項8記載のアレイ。
- さらに、傾斜された波頭を有する入力波を発射するための送信/受信モジュールまたは位相シフタのアレイを具備している請求項1記載のアレイ。
- 連続的なトランスバーススタブのセットを有する広い幅の壁の上部導電性表面と、広い幅の壁の下部導電性表面と、対向する第1及び第2の導電性側壁表面とを有するオーバーモードの導波管構造と、
前記各トランスバーススタブ中に配置されている少なくとも1つのトランスバース装置アレイ回路と、
半導体接合部を逆バイアスする逆バイアス電圧を供給するバイアス回路と、
1次元でビームを走査するために、前記スタブを通って伝播するマイクロ波またはミリメートル波エネルギの位相に変化を生じさせる逆バイアスにされた少なくとも1つのトランスバース装置アレイ回路とを具備し、
前記トランスバース装置アレイ回路はそれぞれマイクロ波回路がその上で規定されているほぼ平坦な誘電体基板と複数の間隔を隔てて配置されそれぞれ半導体接合部を有するディスクリートな半導体装置素子とを含んでおり、
前記スタブ内に配置されている基板は前記第1及び第2の導電性側壁表面に対して横断方向に延在している1次元の連続的なトランスバーススタブの電子的に走査されたアレイ。 - 各半導体素子はバラクタダイオード構造を具備している請求項11記載のアレイ。
- 少なくとも1つのトランスバース装置アレイ回路は、スタブ中に配置されている複数の間隔を隔てられたトランスバース装置アレイ回路を具備し、各回路は基板を具備し、複数の間隔を隔てられたトランスバース装置アレイ回路の基板は縦続形態で配置されている請求項11記載のアレイ。
- さらに、前記オーバーモードの導波管構造中に配置されている誘電体の充填材料を具備している請求項11記載のアレイ。
- それぞれスタブラジエータを規定する連続的なトランスバーススタブのセットを有する上部導電性プレート構造と、
前記上部導電性プレート構造に関して間隔を隔てられた関係で配置されている下部導電性プレート構造と、
上部導電性プレート構造及び下部導電性プレート構造と共に電磁エネルギの伝播のためのオーバーモードの導波管媒体を規定する側壁プレート構造と、
傾斜された波頭を有する入力波を導波管媒体中へ発射する手段とを具備し、
前記各トランスバーススタブでは、1以上のトランスバース装置アレイ(TDA)位相シフタが配置されている連続的なトランスバーススタブを放射素子として使用するアンテナアレイ。 - 前記1以上のTDA位相シフタは複数の縦続配置されたTDA位相シフタを含んでいる請求項15記載のアレイ。
- 前記1以上のTDA位相シフタはそれぞれ、その上に規定された回路を有する誘電体基板と、それぞれ電圧可変リアクタンスを有する複数の間隔を隔てられているディスクリートな半導体ダイオード素子を含む回路と、スタブラジエータの側壁表面に対して横断方向であるスタブラジエータ内に配置されている基板と、
前記電圧可変リアクタンスに影響を与える逆バイアス電圧を与えるバイアス回路とを具備し、
逆バイアス下の前記1以上のTDA位相シフタはスタブラジエータを通って伝播するマイクロ波またはミリメートル波エネルギの位相に変化を生じさせる請求項15記載のアレイ。 - 前記1以上のTDA位相シフタはスタブラジエータ内で間隔を隔てられた関係で複数の縦続されたTDA位相シフタを含んでいる請求項17記載のアレイ。
- 各TDA位相シフタは誘電体基板を具備し、前記複数のTDA位相シフタのそれぞれの基板は並列に整列されて配置されている請求項17記載のアレイ。
- オーバーモードの導波管媒体は、均質で等方性の誘電体材料で充填されている請求項15記載のアレイ。
- 側壁プレート構造は、アレイの動作中心周波数の波長の“N”倍であるように選択された広い幅の壁の寸法を有している請求項15記載のアレイ。
- トランスバース装置のアレイ位相シフタはディスクリートな半導体ダイオードを含んでいる請求項15記載のアレイ。
- ディスクリートな半導体ダイオードはバラクタダイオードまたはショッツキダイオードまたは電圧可変キャパシタを含んでいる請求項22記載のアレイ。
- さらに、前記入力波の発射手段と、2次元でビームを走査するための前記バイアス回路とを制御するためのビーム操縦制御装置を具備している請求項17記載のアレイ。
- 前記入力波の発射手段は、入力波を発射するための送信/受信モジュールまたは位相シフタを具備している請求項15記載のアレイ。
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Application Number | Priority Date | Filing Date | Title |
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US11/016,650 | 2004-12-20 | ||
US11/016,650 US7106265B2 (en) | 2004-12-20 | 2004-12-20 | Transverse device array radiator ESA |
PCT/US2005/039713 WO2006068704A1 (en) | 2004-12-20 | 2005-11-03 | Transverse device array radiator electronically scanned antenna |
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JP2008524925A JP2008524925A (ja) | 2008-07-10 |
JP2008524925A5 JP2008524925A5 (ja) | 2009-01-29 |
JP4768749B2 true JP4768749B2 (ja) | 2011-09-07 |
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US (1) | US7106265B2 (ja) |
EP (1) | EP1831958B1 (ja) |
JP (1) | JP4768749B2 (ja) |
CA (1) | CA2573893C (ja) |
DE (1) | DE602005023656D1 (ja) |
NO (1) | NO340179B1 (ja) |
WO (1) | WO2006068704A1 (ja) |
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JP2008524925A (ja) | 2008-07-10 |
CA2573893C (en) | 2011-10-25 |
US20060132369A1 (en) | 2006-06-22 |
NO20073744L (no) | 2007-09-12 |
US7106265B2 (en) | 2006-09-12 |
EP1831958B1 (en) | 2010-09-15 |
NO340179B1 (no) | 2017-03-20 |
WO2006068704A1 (en) | 2006-06-29 |
DE602005023656D1 (de) | 2010-10-28 |
CA2573893A1 (en) | 2006-06-29 |
EP1831958A1 (en) | 2007-09-12 |
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