JP4765313B2 - Exposure equipment - Google Patents

Description

  The present invention relates to an exposure apparatus used for lithography such as a semiconductor integrated circuit.

Conventionally, in a scanning exposure apparatus using a pulsed light source, a transflective mirror is installed between the illumination optical system and the reticle to divide a part of the illumination light, and is arranged at a position approximately congruent with the reticle surface. The light quantity for each pulse is monitored by a light receiving element. Then, the pulse intensity of the pulse light source is controlled based on the monitored value, and the exposure amount is controlled so that the intensity of the exposure light applied to the sensitive substrate such as a wafer is kept stable. .
JP-A-6-181160

However, in lithography using EUV light (extreme ultraviolet light), it is difficult to branch the illumination light because there is no optical element that semi-transmits EUV light. Therefore, it is difficult to install the light receiving element at a position conjugate with the reticle surface, and it is difficult to monitor the pulse intensity in real time.
The present invention has been made to solve such a conventional problem, and provides an exposure apparatus capable of detecting light intensity for exposure amount control without installing a half mirror for branching illumination light. The purpose is to do.

The exposure apparatus of the present invention, relatively moving the sensitive substrate and a reticle on which a pattern is formed in the scanning direction, an exposure apparatus for transferring a pattern onto a photosensitive substrate, is disposed below the reticle onto a photosensitive substrate An exposure area defining member that defines an exposure area of the exposure light to be irradiated in an arc shape, and the exposure area defining member includes a scanning direction light shielding member that limits the exposure area in the scanning direction to an arc shape and is movable in the scanning direction ; In addition to limiting the end of the arc-shaped exposure area and including a light-receiving element that detects exposure light, the position of the light-receiving element relative to the arc-shaped exposure area is adjusted in a direction perpendicular to the scanning direction. a non-scanning light shield member for moving the light receiving element at an angle inclined direction, and having a.

Further, in the exposure apparatus of the present invention, the light receiving element, characterized in that to move the region corresponding to the exposure area of circular arc shape.

In the exposure apparatus of the present invention, the light receiving element moves in a straight line within an area corresponding to the arc-shaped exposure area.
In the exposure apparatus of the present invention, the non-scanning direction light blocking member is arranged at a position farther from the reticle than the scanning direction light blocking member.

The exposure apparatus or the present invention, a second light receiving element disposed on the sensitive substrate stage, and the reference reflecting surface disposed on the reticle stage, and light receiving elements arranged in the exposure region defining member, the And calibration means for performing calibration between the two light receiving elements.

In the exposure apparatus of the present invention, the calibration manual is characterized in that calibration is performed between the light receiving elements when the illumination condition for illuminating the reticle or the setting of the exposure region is changed.

  In the exposure apparatus of the present invention, since the light receiving element for detecting the light is arranged on the exposure area defining member that determines the exposure area of the exposure light irradiated to the sensitive substrate such as a wafer, the exposure amount control is performed without branching the illumination light. Therefore, the light intensity can be detected.

FIG. 1 shows a first embodiment of the exposure apparatus of the present invention.
The exposure apparatus includes a light source unit 11, an illumination optical system 13, a reticle stage 15, a projection optical system 17, and a wafer stage 19.
The light source unit 11 converts the target material into plasma and generates pulsed light composed of EUV light.
In the light source unit 11, a gas or liquid target material is intermittently ejected from the tip of the nozzle 21. The laser beam 27 emitted from the laser device 25 is condensed on the target material via the lens 29, and the target material is turned into plasma. Thereby, EUV light 31 composed of pulsed light is generated.

The illumination optical system 13 guides illumination light to the lower surface of the reticle 33 arranged below the reticle stage 15.
In this illumination optical system 13, the EUV light 31 from the light source unit 11 becomes a substantially parallel light beam via the concave reflecting mirror 35 that acts as a collimator mirror, and is emitted from the first fly-eye mirror 37 and the second fly-eye mirror 39. Is incident on an optical integrator 41. Thereby, a substantial surface light source having a predetermined shape (in this example, an arc shape but not limited to this shape) is formed in the vicinity of the reflection surface of the second fly-eye mirror 39. The EUV light 31 from the substantial surface light source is reflected by the reflecting mirrors 43 and 45 and then deflected by the planar reflecting mirror 47.

  The reticle stage 15 is movable in the X, Y, and Z directions. An electrostatic chuck 49 is fixed to the lower side of the reticle stage 15, and the reticle 33 is attracted and held on the lower surface of the electrostatic chuck 49. Below the reticle 33, a fixed blind (fixed light shielding feather) 51 and a movable blind (movable light shielding feather) 53 are arranged. Then, the EUV light 31 deflected by the plane reflecting mirror 47 passes through the openings of the movable blind 53 and the fixed blind 51 to form an elongated arc-shaped illumination area on the lower surface of the reticle 33. For convenience of explanation, the fixed blind 51 and the movable blind 53 block the illumination light incident on the reticle 33. However, the light beam reflected from the reticle 33 may be blocked, or the incident side and the reflection side may be blocked. You may make it the structure which shields a light beam by both. In other words, it may be arranged so that the shape of the exposure area on the wafer can be finally defined. The fixed blind 51 defines the vertical shape of the arc shape shown in FIG. 2, and the non-scanning direction light shielding member 63 of the movable blind 53 defines the horizontal width of the arc shape. The reticle 33 has a multilayer film that reflects the EUV light 31 and an absorber pattern layer for forming a pattern. The EUV light 31 is patterned by reflecting the EUV light 31 with the reticle 33.

The projection optical system 17 has four reflecting mirrors, and each of the mirrors 17 a to 17 d is provided with a multilayer film that reflects the EUV light 31. The EUV light 31 reflected and patterned by the reticle 33 is sequentially reflected from the first mirror 17 a to the fourth mirror 17 d to form a reduced image of the reticle pattern on the wafer 55.
The wafer stage 19 is movable in the X, Y, and Z directions. An electrostatic chuck 57 is fixed on the upper side of the wafer stage 19, and the wafer 55 is attracted and held on the upper surface of the electrostatic chuck 57. When exposing the die on the wafer 55, the EUV light 31 is irradiated onto a predetermined region of the reticle 33, and the reticle 33 and the wafer 55 have a predetermined speed according to the reduction ratio of the projection optical system 17 with respect to the projection optical system 17. It moves with. In this way, the reticle pattern is exposed to a predetermined exposure range (with respect to the die) on the wafer 55.

FIG. 2 shows details when the movable blind 53 is viewed from below.
The movable blind 53 has a pair of scanning direction light shielding members 61 (scanning direction light shielding feathers) and a pair of non-scanning direction light shielding members 63 (non-scanning direction light shielding feathers). In FIG. 2, only a part of the scanning direction light shielding member 61 and the non-scanning direction light shielding member 63 is shown.
In FIG. 2, a portion surrounded by a thick solid line L <b> 1 indicates an arcuate illumination area A <b> 1 irradiated on the pattern surface of the reticle 33. The direction of the straight line passing in the radial direction through the center of the arcuate illumination area A1 (vertical direction in FIG. 2) is the scanning direction of the reticle 33. A pair of scanning direction light shielding members 61 that limit the scanning direction of the reticle 33 are arranged at positions on both sides of the illumination area A1 in the scanning direction. The light blocking member 61 in the scanning direction is movable in the scanning direction and prevents the exposure area from protruding before and after scanning, and is sometimes called a mask blind or a synchronous blind.

A pair of non-scanning direction light shielding members 63 that limit the non-scanning direction of the reticle 33 are arranged on both sides of the arcuate illumination area A1 in the direction perpendicular to the scanning direction (the direction in which both ends of the illumination area A1 are located). ing. The non-scanning direction light blocking member 63 determines the scanning width.
A light receiving element 65 that detects the intensity of the illumination light incident on the illumination area A1 for each pulse is disposed on the lower surface of the inner (opposite side) end of the pair of non-scanning direction light shielding members 63. The light receiving element 65 is disposed so as to be positioned in an arc-shaped detection area A3 in which the illumination light is less blurred in the illumination range A2 at the height position of the non-scanning direction light blocking member 63.

  That is, as shown in FIG. 1, since the movable blind 53 is arranged below the pattern surface of the reticle 33 with an interval, the diameter of the arcuate illumination range A2 at the height position of the non-scanning direction light blocking member 63. The width R2 in the direction is larger than the radial width R1 of the illumination area A1, and both sides in the direction of the width R2 and the direction perpendicular to R2 are blurred. Therefore, in this embodiment, the central region with less blur is set as the detection region A3, and the light receiving element 65 is arranged at the position of the detection region A3. In addition, the illumination range A2 of the illumination light is larger than the illumination area A1 that is originally required for exposure.

FIG. 2 shows the position of the non-scanning direction light shielding member 63 at the time of full field exposure. As the field becomes smaller, for example, as shown in FIG. 3, the interval between the pair of non-scanning direction light shielding members 63 becomes smaller. Therefore, when the pair of non-scanning direction light blocking members 63 is simply moved in a direction perpendicular to the scanning direction, the position of the light receiving element 65 is moved away from the detection area A3.
Therefore, in this embodiment, as shown in FIG. 3, the non-scanning direction light blocking member 63 is linearly spaced between the straight line L2 and the straight line L3 at a predetermined angle θ with respect to the direction perpendicular to the scanning direction. Move. As a result, the non-scanning direction light blocking member 63 can be moved in a state where the light receiving element 65 is positioned in the detection region A3. Since the non-scanning direction light blocking member 63 is moved linearly, the driving mechanism of the non-scanning direction light blocking member 63 can be simplified as compared with the case where it is moved two-dimensionally. Of course, it is also possible to move the light blocking member 63 in a curved manner when entering the illumination area A3.

  In this embodiment, as shown in FIG. 3, the non-scanning direction light shielding member 63 is arranged at a position farther than the reticle 33 than the scanning direction light shielding member 61 (a position where the scanning direction light shielding member 61 is hidden in FIG. 3). Yes. That is, the non-scanning direction light shielding member 63 is disposed below the scanning direction light shielding member 61. Thereby, it is possible to reliably avoid the lower side of the light receiving element 65 of the non-scanning direction light blocking member 63 from being blocked by the scanning direction light blocking member 61.

In the exposure apparatus described above, since the light receiving element 65 for detecting the illumination light is arranged on the non-scanning direction light shielding member 63 that defines the illumination range A2 of the illumination light irradiated on the reticle 33, the illumination light is not branched. The intensity of can be monitored.
(Second Embodiment)
FIG. 4 shows a second embodiment of the exposure apparatus of the present invention.

In this embodiment, the same members as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof is omitted.
In this embodiment, a reference reflecting surface 71 on which no pattern is formed is formed on the reticle stage 15. A second light receiving element 73 is disposed on the wafer stage 19. A calibration means 75 for calibrating the light receiving element 65 disposed on the non-scanning direction light blocking member 63 and the second light receiving element 73 disposed on the wafer stage 19 is disposed. The exposure amount is controlled by controlling the exposure amount on the wafer 55. However, since the amount of light cannot be detected on the wafer 55 during exposure, the control is performed using the detection result of the light receiving element 65 during exposure. Therefore, it is necessary to perform calibration by measuring the relationship between the detection value of the light receiving element 65 and the actual light amount value on the wafer stage 19 at that time.

  The calibration means 75 irradiates the reference reflecting surface 71 disposed on the reticle stage 15 with illumination light from the illumination optical system 13, and the intensity of the illumination light at this time is a light receiving element disposed on the non-scanning direction light shielding member 63. 65. Further, the intensity of the illumination light reflected by the reference reflecting surface 71 is detected by the second light receiving element 73. The light receiving element 65 is calibrated by comparing the intensity of the illumination light detected by the light receiving element 65 with the intensity of the illumination light detected by the second light receiving element 73. This calibration is performed, for example, when the illumination conditions (such as when the exposure amount or the NA aperture of the illumination optical system is changed) or the exposure area setting is changed.

  In this embodiment, a neutral density filter 77 is disposed between the concave reflecting mirror 35 of the illumination optical system 13 and the first fly-eye mirror 37. As shown in FIG. 5, the neutral density filter 77 has a disk 81 that can rotate around a central axis 79. The circular plate 81 is formed with four circular holes 81a, 81b, 81c, 81d. One circular hole 81a is hollow, and thin films 83, 84, and 85 made of SiNx having different thicknesses are arranged in the other three circular holes 81b, 81c, and 81d. Thereby, the attenuation factors of the EUV light 31 transmitted through the circular holes 81a, 81b, 81c, 81d are different. Therefore, the intensity of the EUV light 31 that irradiates the reticle 33 is switched in four steps depending on which circular hole 81a, 81b, 81c, 81d is positioned at a portion through which the EUV light 31 passes by rotating the disk 81. be able to.

  As shown in FIG. 4, exposure amount control means 87 for controlling the exposure amount by rotating the neutral density filter 77 is disposed. This exposure amount control means 87 detects the intensity of the illumination light from the signal of the light receiving element 65 arranged on the non-scanning direction light blocking member 63, and makes the circular holes 81a, 81b, 81c, 81d corresponding to the intensity of the EUV light 31. The exposure amount is controlled by being positioned at a passing portion.

In this embodiment, the calibration means 75 can easily and reliably calibrate the light receiving element 65 disposed on the non-scanning direction light blocking member 63 and the second light receiving element 73 disposed on the wafer stage 19. .
Further, the intensity of the illumination light can be stabilized by controlling the neutral density filter 77 installed in the illumination optical system 13 by the exposure amount control means 87.
(Supplementary items of the embodiment)
As mentioned above, although this invention was demonstrated by embodiment mentioned above, the technical scope of this invention is not limited to embodiment mentioned above, For example, the following forms may be sufficient.

  (1) In the second embodiment described above, the example in which the intensity of the illumination light is stabilized by controlling the neutral density filter 77 is described. For example, the pulse of the illumination light intensity is determined from the signal of the light receiving element 65. Fluctuation may be detected to stabilize the illumination light intensity. Further, the illumination light intensity may be stabilized by controlling the light source output of the illumination light. Furthermore, the intensity of illumination light may be stabilized by controlling the scanning speed of the wafer stage 19.

(2) In the above-described embodiment, the example in which the laser-generated plasma light source is used as the light source of the EUV light 31 has been described. For example, the target material is intermittently supplied between the electrodes, and discharge is performed in accordance with the target material. It may be a discharge plasma X-ray source that generates light.
(3) In the above-described embodiment, the example in which the present invention is applied to the exposure apparatus using the EUV light 31 has been described. However, the present invention is an exposure that includes a blind that defines an illumination range of illumination light irradiated on the reticle. Can be widely applied to the device. For example, the present invention can also be applied when a transmission type reticle (mask) is used.

  (4) In the above-described embodiment, the detector is arranged on the blind that is the exposure region defining member so as to detect the illumination light incident on the reticle. However, the intensity of the light beam reflected from or transmitted through the reticle. It is also possible to arrange on the blind so as to detect. For example, in the above-described embodiment, the detector 65 is disposed on the lower surface of the blind, but may be disposed on the upper surface of the blind.

  (5) In the embodiment described above, the detector is arranged on the movable blind, but it can also be arranged on the fixed blind. In this case, it is necessary to arrange the detector in an area that is not shielded by the movable blind. For example, the detector may be arranged in the vertical direction of the arc shape shown in FIG. In particular, if a detector is arranged near the center of the arc, it can be detected even if the horizontal width of the arc is changed by the movable blind. It is also possible to arrange a plurality of detectors in an array instead of one and select the detector to be used according to the position of the movable blind.

  (6) In the above-described embodiment, the movable blind is disposed at a position farther from the reticle than the fixed blind, but may be disposed in reverse.

It is explanatory drawing which shows 1st Embodiment of the exposure apparatus of this invention. It is explanatory drawing which shows the detail of the movable blind of FIG. It is explanatory drawing which shows the state which moved the non-scanning direction light shielding member of FIG. It is explanatory drawing which shows 2nd Embodiment of the exposure apparatus of this invention. It is explanatory drawing which shows the detail of the neutral density filter of FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 11 Light source part 13 Illumination optical system 15 Reticle stage 17 Projection optical system 19 Wafer stage 33 Reticle 53 Movable blind 55 Wafer 61 Scanning direction light shielding member 63 Non-scanning direction light shielding member 65 Light receiving element 71 Reference reflecting surface 73 Second light receiving element 75 Calibration Means 77 Neutralizing filter 87 Exposure amount control means A1 Illumination area A2 Illumination area A3 Detection area

Claims (6)

In an exposure apparatus that relatively moves a reticle on which a pattern is formed and a sensitive substrate in a scanning direction, and transfers the pattern onto the sensitive substrate.
An exposure area defining member that is arranged below the reticle and defines an exposure area of exposure light irradiated on the sensitive substrate in an arc shape;
The exposure area defining member limits the exposure area in the scanning direction to an arc shape, limits a scanning direction light shielding member movable in the scanning direction, an end of the arc-shaped exposure area, and the exposure. A light receiving element that detects light, and moves the light receiving element in a direction inclined by a predetermined angle with respect to a direction perpendicular to the scanning direction in order to adjust the position of the light receiving element with respect to the arc-shaped exposure region; A scanning direction light shielding member ;
An exposure apparatus comprising: The exposure apparatus according to claim 1,
An exposure apparatus , wherein the light receiving element moves in an area corresponding to the arc-shaped exposure area. The exposure apparatus according to claim 2, wherein
The exposure apparatus according to claim 1, wherein the light receiving element moves linearly within an area corresponding to the arc-shaped exposure area. The exposure apparatus according to claim 1 , wherein
The exposure apparatus according to claim 1, wherein the non-scanning direction light shielding member is disposed at a position farther from the reticle than the scanning direction light shielding member. The exposure apparatus according to any one of claims 1 to 4,
A second light receiving element disposed on the sensitive substrate stage;
A reference reflecting surface disposed on the reticle stage;
Calibration means for performing calibration between the light receiving element disposed on the exposure region defining member and the second light receiving element;
Exposure apparatus characterized by have a. The exposure apparatus according to claim 5 , wherein
The exposure apparatus characterized in that the calibration manual performs calibration between the light receiving elements when an illumination condition for illuminating the reticle or a setting of the exposure region is changed .

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