JP4755500B2 - Ultrasonic probe - Google Patents

Ultrasonic probe Download PDF

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JP4755500B2
JP4755500B2 JP2006017137A JP2006017137A JP4755500B2 JP 4755500 B2 JP4755500 B2 JP 4755500B2 JP 2006017137 A JP2006017137 A JP 2006017137A JP 2006017137 A JP2006017137 A JP 2006017137A JP 4755500 B2 JP4755500 B2 JP 4755500B2
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substrate
insulating layer
ultrasonic probe
silicon substrate
ultrasonic
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JP2007201753A (en
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宇紀 青野
達也 永田
勝徳 浅房
小林　　隆
尚哉 諫田
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Hitachi Ltd
Hitachi Healthcare Manufacturing Ltd
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Hitachi Ltd
Hitachi Medical Corp
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Priority to JP2006017137A priority Critical patent/JP4755500B2/en
Priority to PCT/JP2006/322649 priority patent/WO2007086180A1/en
Priority to US12/161,962 priority patent/US7969067B2/en
Priority to EP06832611A priority patent/EP1980209A4/en
Priority to CN2006800515711A priority patent/CN101360456B/en
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    • G—PHYSICS
    • G10—MUSICAL INSTRUMENTS; ACOUSTICS
    • G10K—SOUND-PRODUCING DEVICES; METHODS OR DEVICES FOR PROTECTING AGAINST, OR FOR DAMPING, NOISE OR OTHER ACOUSTIC WAVES IN GENERAL; ACOUSTICS NOT OTHERWISE PROVIDED FOR
    • G10K11/00—Methods or devices for transmitting, conducting or directing sound in general; Methods or devices for protecting against, or for damping, noise or other acoustic waves in general
    • G10K11/002—Devices for damping, suppressing, obstructing or conducting sound in acoustic devices
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Acoustics & Sound (AREA)
  • Multimedia (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)

Description

本発明は、超音波を送受信するための超音波探触子に関する。   The present invention relates to an ultrasonic probe for transmitting and receiving ultrasonic waves.

被検体を超音波で検査する分野で適用されている従来の超音波探触子として、シリコン基板上に作製したギャップ、絶縁層、電極で送受信素子を構成し、そのシリコン基板の反対面に音響インピーダンスが整合するダンピング層を設置した超音波探触子が案出されている。この超音波探触子は、電極とシリコン基板との間にＤＣ電圧（バイアス電圧）を印加して、ある所定の位置までギャップを縮めておき、更に電極とシリコン基板との間にＡＣ電圧（超音波送波用駆動電圧）を印加して、ギャップを伸縮することにより超音波を送信する機能を備えている。また、被検体に当たり反射してくる超音波により、電極とシリコン基板との間の容量変化を検出して超音波を受信する機能も兼ね備えている。ここで、ダンピング層は、送受信時の超音波の反射を低減する役割を有する。具体的なダンピング層としては、エポキシ樹脂にタングステン微粒子を混合することによりシリコン基板との音響インピーダンスを整合させた材料が用いられる。かかる従来技術に関するものとしては、例えば、米国特許第６７１４４８４Ｂ２号明細書（特許文献１）が挙げられる。   As a conventional ultrasonic probe applied in the field of inspecting a subject with ultrasonic waves, a transmission / reception element is composed of a gap, an insulating layer, and an electrode made on a silicon substrate, and an acoustic wave is formed on the opposite surface of the silicon substrate. An ultrasonic probe having a damping layer with matching impedance has been devised. In this ultrasonic probe, a DC voltage (bias voltage) is applied between the electrode and the silicon substrate, the gap is reduced to a predetermined position, and an AC voltage (between the electrode and the silicon substrate is further reduced). A function of transmitting an ultrasonic wave by applying and applying an ultrasonic wave drive voltage) and expanding and contracting the gap is provided. In addition, it also has a function of receiving an ultrasonic wave by detecting a change in capacitance between the electrode and the silicon substrate by an ultrasonic wave reflected upon the subject. Here, the damping layer has a role of reducing reflection of ultrasonic waves during transmission and reception. As a specific damping layer, a material in which acoustic impedance with the silicon substrate is matched by mixing tungsten fine particles with epoxy resin is used. For example, U.S. Pat. No. 6,714,484 B2 (Patent Document 1) may be cited as such a related art.

米国特許第６７１４４８４Ｂ２号明細書US Pat. No. 6,714,484B2

静電駆動によって超音波を送受信する超音波探触子では、高密度に超音波トランスデューサを形成する必要があるため、半導体製造技術、ＭＥＭＳ（Micro Electro Mechanical Systems）技術による微細加工で超音波探触子が製作される。これらの微細加工技術は、シリコンをベース基板として適用されるものである。超音波探触子では、送受信時の反射を低減するために、シリコン基板とダンピング層との間で音響インピーダンスを整合させる必要がある。そこで、特許文献１では、ベース基板とダンピング層との音響インピーダンスを整合させるため、ダンピング層の材料としてエポキシ樹脂にタングステン微粒子を適量だけ混合した材料を用いている。この場合、ベース基板とダンピング層との音響インピーダンスの整合は可能であるが、ベース基板とダンピング層との線膨張係数が異なるため、温度変化によるベース基板の変形によりベース基板が壊れる可能性があり、構造信頼性が不十分であるという課題があった。   In an ultrasonic probe that transmits and receives ultrasonic waves by electrostatic drive, it is necessary to form ultrasonic transducers at high density. Therefore, ultrasonic probe is performed by microfabrication using semiconductor manufacturing technology and MEMS (Micro Electro Mechanical Systems) technology. A child is produced. These microfabrication techniques are applied using silicon as a base substrate. In the ultrasonic probe, it is necessary to match the acoustic impedance between the silicon substrate and the damping layer in order to reduce reflection during transmission and reception. Therefore, in Patent Document 1, in order to match the acoustic impedance between the base substrate and the damping layer, a material obtained by mixing an appropriate amount of tungsten fine particles with an epoxy resin is used as the material of the damping layer. In this case, it is possible to match the acoustic impedance between the base substrate and the damping layer, but the base substrate may be damaged due to deformation of the base substrate due to temperature changes because the linear expansion coefficients of the base substrate and the damping layer are different. There was a problem that the structural reliability was insufficient.

本発明の目的は、温度変化によるシリコン基板の損傷を防止することができ、送受信性能及び構造信頼性に優れた超音波探触子を提供することにある。   An object of the present invention is to provide an ultrasonic probe that can prevent damage to a silicon substrate due to a temperature change and is excellent in transmission / reception performance and structural reliability.

前述の目的を達成するために、本発明は、シリコン基板及び超音波送受信素子を有する第１基板と、前記第１基板の上面に設置された音響レンズと、前記第１基板の下方に設置されたダンピング層とを備える超音波探触子において、前記第１基板の下面と前記ダンピング層の上面との間に第２基板を設置し、前記第２基板を、前記第１基板のシリコン基板とほぼ同じ線膨張係数を有し且つ音響インピーダンスが近い材料である窒化アルミニウムまたは４２アロイで形成したことにある。 In order to achieve the above-described object, the present invention provides a first substrate having a silicon substrate and an ultrasonic transmission / reception element, an acoustic lens disposed on the upper surface of the first substrate, and disposed below the first substrate. In the ultrasonic probe comprising a damping layer, a second substrate is installed between the lower surface of the first substrate and the upper surface of the damping layer, and the second substrate is connected to the silicon substrate of the first substrate. It is made of aluminum nitride or 42 alloy which is a material having substantially the same linear expansion coefficient and close acoustic impedance.

係る本発明のより好ましい具体的な構成例は次の通りである。
（１）前記第１基板は下部電極を兼ねる前記シリコン基板上に絶縁層、ギャップ及び上部電極を設けて前記超音波送受信素子を構成していること。
（２）前記（１）において、前記超音波送受信素子は、前記下部電極を兼ねる前記シリコン基板、前記シリコン基板の上面に形成された第１絶縁層、前記第１絶縁層の上面に形成された第２絶縁層、前記第１絶縁層と前記第２絶縁層との間に形成された複数の前記ギャップ、前記第２絶縁層内における前記複数のギャップのそれぞれに対応する位置に形成された複数の前記上部電極とから形成されていること。
（３）前記第１基板は前記シリコン基板上に絶縁層、下部電極、ギャップ及び上部電極を設けて前記超音波送受信素子を構成していること。
（４）前記（３）において、前記超音波送受信素子は、前記シリコン基板の上面に形成された第１絶縁層、前記第１絶縁層の上面に形成された第２絶縁層、前記第１絶縁層と前記第２絶縁層との間に形成された複数の前記ギャップ、前記第２絶縁層内における前記複数のギャップのそれぞれに対応する下方の位置に形成された前記下部電極、前記第２絶縁層内における前記複数のギャップのそれぞれに対応する上方の位置に形成された複数の前記上部電極とから形成されていること。
（５）前記第１基板と前記第２基板、前記第２基板と前記ダンピング層をそれぞれ接着層を介して固定したこと。
（６）前記シリコン基板上の絶縁層が酸化シリコン、窒化シリコンの少なくとも１種以上で形成されていること。 A more preferable specific configuration example of the present invention is as follows.
(1) The ultrasonic transmission / reception element is configured by providing an insulating layer, a gap, and an upper electrode on the silicon substrate, the first substrate also serving as a lower electrode.
(2) In (1), the ultrasonic transmission / reception element is formed on the silicon substrate also serving as the lower electrode, a first insulating layer formed on an upper surface of the silicon substrate, and an upper surface of the first insulating layer. A second insulating layer, a plurality of gaps formed between the first insulating layer and the second insulating layer, and a plurality of gaps formed at positions corresponding to the plurality of gaps in the second insulating layer. And the upper electrode.
(3) The ultrasonic wave transmitting / receiving element is configured by providing an insulating layer, a lower electrode, a gap, and an upper electrode on the silicon substrate.
(4) In (3), the ultrasonic transmitting / receiving element includes a first insulating layer formed on an upper surface of the silicon substrate, a second insulating layer formed on the upper surface of the first insulating layer, and the first insulating layer. A plurality of gaps formed between a layer and the second insulating layer; a lower electrode formed at a position corresponding to each of the plurality of gaps in the second insulating layer; and the second insulation And a plurality of upper electrodes formed at upper positions corresponding to the plurality of gaps in the layer.
(5) The first substrate and the second substrate, and the second substrate and the damping layer are each fixed through an adhesive layer.
(6) the insulating layer before Symbol silicon substrate is formed of silicon oxide, at least one kind of silicon nitride.

本発明によれば、温度変化によるシリコン基板の損傷を防止することができ、送受信性能及び構造信頼性に優れた超音波探触子を実現できる。   According to the present invention, it is possible to prevent a silicon substrate from being damaged due to a temperature change, and to realize an ultrasonic probe excellent in transmission / reception performance and structural reliability.

以下、本発明の複数の実施形態について図を用いて説明する。各実施形態の図における同一符号は同一物または相当物を示す。
（第１実施形態）
本発明の第１実施形態の超音波探触子を図１から図３を用いて説明する。図１は本発明の第１実施形態の超音波探触子２の断面図、図２は図１の超音波送受信素子３部分の拡大図、図３は図２の超音波送受信素子３の動作原理を説明する図である。 Hereinafter, a plurality of embodiments of the present invention will be described with reference to the drawings. The same reference numerals in the drawings of the respective embodiments indicate the same or equivalent.
(First embodiment)
An ultrasonic probe according to a first embodiment of the present invention will be described with reference to FIGS. 1 is a cross-sectional view of the ultrasonic probe 2 according to the first embodiment of the present invention, FIG. 2 is an enlarged view of the ultrasonic transmitting / receiving element 3 portion of FIG. 1, and FIG. 3 is an operation of the ultrasonic transmitting / receiving element 3 of FIG. It is a figure explaining a principle.

超音波探触子２は、図１に示すように、シリコン基板２１（図２参照）及び送受信素子部Ａ（詳細は図２参照）を有する第１基板２０と、第１基板２０の上面に設置された音響レンズ１１と、第１基板２０の下方に設置されたダンピング層４１と、第１基板２０の下面とダンピング層４１の上面との間に設置された第２基板３１と、を備えて構成されたリニア型超音波探触子である。   As shown in FIG. 1, the ultrasonic probe 2 includes a first substrate 20 having a silicon substrate 21 (see FIG. 2) and a transmitting / receiving element portion A (see FIG. 2 for details), and an upper surface of the first substrate 20. An acoustic lens 11 installed; a damping layer 41 installed below the first substrate 20; and a second substrate 31 installed between the lower surface of the first substrate 20 and the upper surface of the damping layer 41. This is a linear type ultrasonic probe configured as described above.

ダンピング層４１は、送受信時の超音波の反射を低減するかつ透過した超音波を減衰させる役割を有するものであり、図１及び図２に示すように、第１基板２０や第２基板３１よりも十分に厚く形成され、超音波探触子２の底部を構成するように配置されている。このダンピング層４１の材料は、シリコン基板２１と音響インピーダンスが近いものとなるように、エポキシ樹脂に多重反射により超音波を減衰させる目的でタングステンの微粒子を混合した材料、或いはフェライトゴムが用いられる。   The damping layer 41 has a role of reducing reflection of ultrasonic waves during transmission and reception and attenuating transmitted ultrasonic waves. As shown in FIGS. 1 and 2, the damping layer 41 is formed by the first substrate 20 and the second substrate 31. Is sufficiently thick, and is arranged so as to constitute the bottom of the ultrasonic probe 2. The material of the damping layer 41 is a material in which tungsten fine particles are mixed with an epoxy resin for the purpose of attenuating ultrasonic waves by multiple reflection, or ferrite rubber so that the acoustic impedance is close to that of the silicon substrate 21.

第２基板３１は、温度変化によるシリコン基板２１の損傷を防止する役割を有するものであり、図２に示すように、シリコン基板２１の厚さとほほ同じ厚さ，もしくは厚く形成され、ダンピング層４１の上面と第１基板２０のシリコン基板２１の下面との間に配置されている。この第２基板３１の材料は、シリコン基板２１と線膨張係数がほぼ同じで音響インピーダンスが近い材料である窒化アルミニウムまたは４２アロイが用いられる。   The second substrate 31 has a role of preventing damage to the silicon substrate 21 due to temperature change. As shown in FIG. 2, the second substrate 31 is formed to have a thickness that is almost the same as or thicker than the thickness of the silicon substrate 21. Between the upper surface of the first substrate 20 and the lower surface of the silicon substrate 21 of the first substrate 20. The material of the second substrate 31 is aluminum nitride or 42 alloy, which is a material having substantially the same linear expansion coefficient as that of the silicon substrate 21 and close to acoustic impedance.

図１の第１基板２０は、超音波送受信の役割を有するものであり、図２に示すように、シリコン基板２１上に第１絶縁層２２を形成し、その上にギャップ２４、上部電極２５を内部に備えた第２絶縁層２３により構成され、音響レンズ１１と第２基板３１との間に配置されている。この第１基板２０には、複数の超音波送受信素子３が形成されている。   The first substrate 20 shown in FIG. 1 has a role of ultrasonic transmission / reception. As shown in FIG. 2, a first insulating layer 22 is formed on a silicon substrate 21, and a gap 24 and an upper electrode 25 are formed thereon. Is disposed between the acoustic lens 11 and the second substrate 31. A plurality of ultrasonic transmission / reception elements 3 are formed on the first substrate 20.

なお、ダンピング層４１、第２基板３１、第１基板２０及び音響レンズ１１は、それぞれの間に接着層４２、３２、１２を介して固定され、下から上へこの順に多層となるように形成されている。接着層４２、３２、１２の材料は、エポキシ系樹脂が用いられる。   The damping layer 41, the second substrate 31, the first substrate 20, and the acoustic lens 11 are fixed to each other through adhesive layers 42, 32, and 12, and are formed so as to be multilayered from bottom to top in this order. Has been. An epoxy resin is used as the material of the adhesive layers 42, 32, 12.

超音波送受信素子３は、超音波送受信機能を有するように、シリコン基板２１、第１絶縁層２２、第２絶縁層２３、ギャップ２４、及び上部電極２５を備えて構成されている。この超音波送受信素子３はシリコン基板２１と上部電極２５との間に電圧を印加して、ギャップ２４上の膜（第２絶縁層２３、上部電極２５）を振動させて、超音波を送受信するものである。なお、シリコン基板２１、第１絶縁層２２、第２絶縁層２３及び上部電極２５は、下から上へこの順に多層となるように形成されている。   The ultrasonic transmitting / receiving element 3 includes a silicon substrate 21, a first insulating layer 22, a second insulating layer 23, a gap 24, and an upper electrode 25 so as to have an ultrasonic transmitting / receiving function. The ultrasonic transmission / reception element 3 transmits and receives ultrasonic waves by applying a voltage between the silicon substrate 21 and the upper electrode 25 to vibrate the film (second insulating layer 23 and upper electrode 25) on the gap 24. Is. The silicon substrate 21, the first insulating layer 22, the second insulating layer 23, and the upper electrode 25 are formed so as to be multilayered in this order from the bottom to the top.

シリコン基板２１は、第２基板３１の上面に接着層３２を介して配置され、超音波送受信素子３の下部電極を兼ねている。第１絶縁層２２は、下部電極を兼ねるシリコン基板２１と上部電極２５との電気的絶縁性を確保するように、シリコン基板２１の上面に配置されており，その厚さは，５０〜４００ｎｍで形成する。第２絶縁層２３は、第１絶縁層２２の上面に配置され、その下面に凹部を形成して第１絶縁層２２との間に複数のギャップ２４を形成すると共に、各ギャップ２４に対応する上方位置に複数の上部電極２５を埋設している。ギャップ２４は，１００〜３００ｎｍ、上部電極２５の厚さは，４００ｎｍである。第２絶縁層２３は、ギャップ２４の形成及び上部電極２５の埋設をするため、第１絶縁層２２より厚く、その厚さは、２０００ｎｍで形成されている。特に、第２絶縁層２３は、超音波送受信素子３の特性である音圧、中心周波数，比帯域に影響するため、用途により調整することで、幅広い被検体の検査に適用可能である。
第１絶縁層２２及び第２絶縁層２３は、窒化シリコン、酸化シリコンの少なくとも１種類以上の材料で形成されることが好ましい。上部電極２５は、各ギャップ２４の直上に位置して、第２絶縁層２３内に形成されている。この上部電極２５は、アルミニウム、窒化アルミニウム、窒化チタン，チタンで形成されることが好ましい。 The silicon substrate 21 is disposed on the upper surface of the second substrate 31 via the adhesive layer 32 and also serves as the lower electrode of the ultrasonic transmitting / receiving element 3. The first insulating layer 22 is disposed on the upper surface of the silicon substrate 21 so as to ensure electrical insulation between the upper electrode 25 and the silicon substrate 21 that also serves as the lower electrode, and has a thickness of 50 to 400 nm. Form. The second insulating layer 23 is disposed on the upper surface of the first insulating layer 22, and a plurality of gaps 24 are formed between the second insulating layer 23 and the first insulating layer 22 by forming recesses on the lower surface of the second insulating layer 23. A plurality of upper electrodes 25 are embedded in the upper position. The gap 24 is 100 to 300 nm, and the thickness of the upper electrode 25 is 400 nm. The second insulating layer 23 is thicker than the first insulating layer 22 and has a thickness of 2000 nm in order to form the gap 24 and bury the upper electrode 25. In particular, since the second insulating layer 23 affects the sound pressure, the center frequency, and the ratio band, which are the characteristics of the ultrasonic transmitting / receiving element 3, it can be applied to a wide range of examinations by adjusting according to the application.
The first insulating layer 22 and the second insulating layer 23 are preferably formed of at least one material of silicon nitride and silicon oxide. The upper electrode 25 is formed in the second insulating layer 23 so as to be located immediately above each gap 24. The upper electrode 25 is preferably formed of aluminum, aluminum nitride, titanium nitride, or titanium.

音響レンズ１１は、被検体（図示せず）との間の音響インピーダンスを整合させ，かつ超音波のフォーカスを行う役割を有するものであり、図２に示すように、第１基板２０や第２基板３１よりも十分に厚く形成され、超音波探触子２の上面部を構成するように配置されている。音響レンズ１１は、第２絶縁層２３の上面に接着層３２を介して配置されている。音響レンズ１１の上面は、被検体のフォーカスする深度すなわち検出する用途により、曲率は変わるが上方に突出する緩やかな円弧状に形成されている。   The acoustic lens 11 has a role of matching acoustic impedance with a subject (not shown) and focusing ultrasonic waves, and as shown in FIG. It is formed to be sufficiently thicker than the substrate 31 and is disposed so as to constitute the upper surface portion of the ultrasonic probe 2. The acoustic lens 11 is disposed on the upper surface of the second insulating layer 23 via an adhesive layer 32. The upper surface of the acoustic lens 11 is formed in a gentle arc shape that protrudes upward, although the curvature varies depending on the depth of focus of the subject, that is, the purpose of detection.

係る構成の超音波探触子２における超音波送受信の動作原理を、図３を参照しながら説明する。   An operation principle of ultrasonic transmission / reception in the ultrasonic probe 2 having such a configuration will be described with reference to FIG.

超音波の送信をする場合には、まず、図３（ａ）の状態で下部電極を兼ねるシリコン基板２１と上部電極２５との間にＤＣバイアス電圧を印加することにより、図３（ｂ）に示すようにギャップ２４をある所定位置まで縮める。この状態で、下部電極を兼ねるシリコン基板２１と上部電極２５との間に超音波送信用ＡＣ電圧を印加することにより、図３（ｃ）及び図３（ｄ）に示すようにギャップ２４を伸縮させることで超音波を発生させる。なお、図１の超音波送受信素子３から発生した超音波は、音響レンズ１１を介して、被検体へと送信される。   When ultrasonic waves are transmitted, first, a DC bias voltage is applied between the silicon substrate 21 that also serves as the lower electrode and the upper electrode 25 in the state of FIG. As shown, the gap 24 is reduced to a predetermined position. In this state, by applying an ultrasonic transmission AC voltage between the upper electrode 25 and the silicon substrate 21 also serving as the lower electrode, the gap 24 is expanded and contracted as shown in FIGS. 3 (c) and 3 (d). To generate ultrasonic waves. Note that the ultrasonic waves generated from the ultrasonic transmission / reception element 3 in FIG. 1 are transmitted to the subject via the acoustic lens 11.

一方、超音波を受信する場合には、下部電極を兼ねるシリコン基板２１と上部電極２５との間にＤＣバイアス電圧を印加してギャップ２４をある所定位置まで縮めた状態としておくと、図３（ｅ）及び図３（ｆ）に示すように被検体より反射してきた超音波によりギャップ２４が伸縮する。このギャップ２４の伸縮により、シリコン基板２１と上部電極２５との間の静電容量が変化するので、この変化を検出することにより超音波を検出することができる。   On the other hand, in the case of receiving ultrasonic waves, if a DC bias voltage is applied between the silicon substrate 21 that also serves as the lower electrode and the upper electrode 25 so that the gap 24 is contracted to a predetermined position, FIG. As shown in e) and FIG. 3 (f), the gap 24 expands and contracts by the ultrasonic waves reflected from the subject. Since the electrostatic capacity between the silicon substrate 21 and the upper electrode 25 changes due to the expansion and contraction of the gap 24, ultrasonic waves can be detected by detecting this change.

本実施形態において、シリコン基板２１は線膨張係数が３．５、音響インピーダンスが２１ｋｇ／ｍ２ｓ、４２アロイは線膨張係数が４〜５、音響インピーダンスが４７ｋｇ／ｍ２ｓ、窒化アルミニウムは線膨張係数が３．７、音響インピーダンスが３４ｋｇ／ｍ２ｓ、ダンピング層４１は線膨張係数が１００〜、音響インピーダンスが〜１０ｋｇ／ｍ２ｓである。 In this embodiment, the silicon substrate 21 has a linear expansion coefficient of 3.5, an acoustic impedance of 21 kg / m 2 s, a 42 alloy has a linear expansion coefficient of 4 to 5, an acoustic impedance of 47 kg / m 2 s, and aluminum nitride is linear. The expansion coefficient is 3.7, the acoustic impedance is 34 kg / m 2 s, and the damping layer 41 has a linear expansion coefficient of 100 to 100 and an acoustic impedance of 10 kg / m 2 s.

２つの材料の境界での、音響インピーダンスの差による超音波の反射率ｒは、ｒ＝（Ｚ１−Ｚ２）／（Ｚ１＋Ｚ２）で表され、上述したシリコン基板２１−ダンピング層４１の反射率ｒは，０.３５である。一方，その間に窒化アルミニウムまたは４２アロイの第２基板３１を搭載した場合，シリコン基板２１−窒化アルミニウムの反射率ｒ：０.２４，シリコン基板２１−４２アロイの反射率ｒ：０.３８であり，シリコン基板２１−ダンピング層４１の反射率と同等である。また，窒化アルミニウム−ダンピング層４１の反射率ｒ：０.５４，４２アロイ−ダンピング層４１の反射率ｒ：０.６４であるが，シリコン基板２１と第２基板３２との間で透過する超音波を考慮すると，窒化アルミニウムを用いた場合の反射率ｒ：０.４１，４２アロイを用いた場合の反射率ｒ：０．３９であり，ダンピング層４１の反射率と同等である。例えば、シリコン基板から出た超音波を１とした場合，シリコン基板と第２基板との界面での反射は，０．２４（窒化アルミ），０．３８（４２アロイ）であるため，透過する超音波は，０．７６（窒化アルミ），０．６２（４２アロイ）となる．第２基板とダンピング層との界面の反射は，０．７６×０．５４＝０．４１（窒化アルミ），０．６２×０．６４＝０．３９（４２アロイ）となる。一方、シリコン基板２１とダンピング層４１との線膨張係数の差が大きいため、シリコン基板２１とダンピング層４１とを直接接着すると、温度上昇による構造信頼性が低下し、シリコン基板２１に応力が集中して破壊する可能性がある。そこで、本実施形態では、シリコン基板２１とダンピング層４１との間に窒化アルミニウムまたは４２アロイの第２基板３１を介在させることで、シリコン基板２１への応力集中を緩和して構造信頼性を格段に向上することができる。   The reflectance r of the ultrasonic wave due to the difference in acoustic impedance at the boundary between the two materials is expressed by r = (Z1−Z2) / (Z1 + Z2), and the reflectance r of the silicon substrate 21−damping layer 41 described above is , 0.35. On the other hand, when the second substrate 31 of aluminum nitride or 42 alloy is mounted between them, the reflectance r of silicon substrate 21-aluminum nitride is 0.24, and the reflectance r of silicon substrate 21-42 alloy is 0.38. , Equivalent to the reflectance of the silicon substrate 21-damping layer 41. Further, the reflectivity r of the aluminum nitride-damping layer 41 is 0.54, and the reflectivity r of the alloy-damping layer 41 is 0.64, but it is transmitted between the silicon substrate 21 and the second substrate 32. Considering the sound wave, the reflectance r when using aluminum nitride is 0.41 and the reflectance r when using 42 alloy is 0.39, which is equivalent to the reflectance of the damping layer 41. For example, when the ultrasonic wave emitted from the silicon substrate is 1, reflection at the interface between the silicon substrate and the second substrate is 0.24 (aluminum nitride) and 0.38 (42 alloy), so that it is transmitted. Ultrasound is 0.76 (aluminum nitride) and 0.62 (42 alloy). The reflection at the interface between the second substrate and the damping layer is 0.76 × 0.54 = 0.41 (aluminum nitride) and 0.62 × 0.64 = 0.39 (42 alloy). On the other hand, since the difference in coefficient of linear expansion between the silicon substrate 21 and the damping layer 41 is large, if the silicon substrate 21 and the damping layer 41 are directly bonded, the structural reliability due to the temperature rises and stress is concentrated on the silicon substrate 21. And may be destroyed. Therefore, in the present embodiment, by interposing the second substrate 31 of aluminum nitride or 42 alloy between the silicon substrate 21 and the damping layer 41, stress concentration on the silicon substrate 21 is alleviated and structural reliability is remarkably improved. Can be improved.

なお、シリコン基板２１とダンピング層４１との間に前記第２基板３１を介在させても、シリコン基板２１とダンピング層４１との間の反射率ｒは小さいので、超音波送受信素子３の後方へ放射される超音波が効率よくダンピング層４１へ伝播される。   Even if the second substrate 31 is interposed between the silicon substrate 21 and the damping layer 41, the reflectivity r between the silicon substrate 21 and the damping layer 41 is small, so that the ultrasonic wave transmitting / receiving element 3 is moved backward. The emitted ultrasonic wave is efficiently propagated to the damping layer 41.

以上説明したように、本実施形態によれば、第１基板２０の下面とダンピング層４１の上面との間に第２基板３１を設置し、第２基板３１を、第１基板２０のシリコン基板２１とほぼ同じ線膨張係数及び音響インピーダンスを有する材料で形成しているので、温度変化によるシリコン基板２１の損傷を防止することができ、送受信性能及び構造信頼性に優れた超音波探触子２を実現できる。
（第２実施形態）
次に、本発明の第２実施形態の超音波探触子について図４を用いて説明する。図４は本発明の第２実施形態の超音波探触子の要部拡大図である。この第２実施形態は、次に述べる点で第１実施形態と相違するものであり、その他の点については第１実施形態と基本的には同一であるので、重複する説明を省略する。 As described above, according to the present embodiment, the second substrate 31 is installed between the lower surface of the first substrate 20 and the upper surface of the damping layer 41, and the second substrate 31 is a silicon substrate of the first substrate 20. The ultrasonic probe 2 is made of a material having substantially the same linear expansion coefficient and acoustic impedance as that 21 and can prevent damage to the silicon substrate 21 due to temperature change, and has excellent transmission / reception performance and structural reliability. Can be realized.
(Second Embodiment)
Next, an ultrasonic probe according to a second embodiment of the present invention will be described with reference to FIG. FIG. 4 is an enlarged view of a main part of the ultrasonic probe according to the second embodiment of the present invention. The second embodiment is different from the first embodiment in the points described below, and the other points are basically the same as those in the first embodiment, and thus redundant description is omitted.

この第２実施形態では、超音波送受信素子３は、シリコン基板２１の上面に形成された第１絶縁層２２と、第１絶縁層２２の上面に形成された第２絶縁層２３と、第２絶縁層２３の内部に形成された複数のギャップ２４と、第１絶縁層２２の上面で且つ複数のギャップ２４のそれぞれの下部に第２絶縁層２３を介して形成された下部電極２７と、第２絶縁層２３内における複数のギャップ２４のそれぞれに対応する位置に形成された複数の上部電極２５と、から形成されている。この超音波送受信素子３は、上部電極２５と下部電極２７との間に前述のように電圧を印加することにより駆動される。なお、下部電極２７は、上部電極２５と同様に、アルミニウム、窒化アルミニウム、窒化チタンで形成されることが好ましい。   In the second embodiment, the ultrasonic transmitting / receiving element 3 includes a first insulating layer 22 formed on the upper surface of the silicon substrate 21, a second insulating layer 23 formed on the upper surface of the first insulating layer 22, and a second A plurality of gaps 24 formed inside the insulating layer 23; a lower electrode 27 formed on the upper surface of the first insulating layer 22 and below each of the plurality of gaps 24 via the second insulating layer 23; And a plurality of upper electrodes 25 formed at positions corresponding to the plurality of gaps 24 in the insulating layer 23. The ultrasonic transmitting / receiving element 3 is driven by applying a voltage between the upper electrode 25 and the lower electrode 27 as described above. The lower electrode 27 is preferably formed of aluminum, aluminum nitride, or titanium nitride, as with the upper electrode 25.

本実施形態では、下部電極２７を、第１実施形態のように下部電極をシリコン基板とするのではなく、超音波送受信素子毎に個別に配置してあるので、超音波送受信素子３を個別に駆動することが可能である。
（第３実施形態）
次に、本発明の第３実施形態について図５を用いて説明する。図５は本発明の第３実施形態の超音波探触子の要部拡大図である。この第３実施形態は、次に述べる点で第１実施形態と相違するものであり、その他の点については第１実施形態と基本的には同一であるので、重複する説明を省略する。 In the present embodiment, the lower electrode 27 is not disposed on the silicon substrate as in the first embodiment, but is disposed separately for each ultrasonic transmission / reception element. It is possible to drive.
(Third embodiment)
Next, a third embodiment of the present invention will be described with reference to FIG. FIG. 5 is an enlarged view of a main part of the ultrasonic probe according to the third embodiment of the present invention. The third embodiment is different from the first embodiment in the points described below, and the other points are basically the same as those in the first embodiment, and thus redundant description is omitted.

この第３実施形態の超音波探触子２は、コンベックス型超音波探触子の構造である。コンベックス型超音波探触子２では、第１実施形態に示した超音波送受信素子３を備えたシリコン基板２１、第２基板３１およびダンピング層４１並びに音響レンズ１１で構成され、シリコン基板２１及び第２基板３１は所定の曲率（例えば，４０ｍｍ）をもって曲げて設置されている。ここで、シリコン基板２１は、曲げて設置するため、５０μｍ以下にすることが好ましい。また、第２基板３１としては、セラミック材料である窒化アルミニウムは加工が困難であるため、加工が容易な４２アロイを第２基板３１を用いることが好ましい。   The ultrasonic probe 2 according to the third embodiment has the structure of a convex ultrasonic probe. The convex ultrasonic probe 2 includes the silicon substrate 21, the second substrate 31, the damping layer 41, and the acoustic lens 11 including the ultrasonic transmission / reception element 3 described in the first embodiment. The two substrates 31 are bent and installed with a predetermined curvature (for example, 40 mm). Here, the silicon substrate 21 is preferably set to 50 μm or less in order to be bent. Further, as the second substrate 31, it is difficult to process aluminum nitride, which is a ceramic material, and therefore it is preferable to use the second substrate 31 of 42 alloy that is easy to process.

本発明の第１実施形態の超音波探触子の断面図である。It is sectional drawing of the ultrasonic probe of 1st Embodiment of this invention. 図１の超音波送受信素子部分の拡大図である。It is an enlarged view of the ultrasonic transmission / reception element part of FIG. 図２の超音波送受信素子の動作原理を説明する図である。It is a figure explaining the principle of operation of the ultrasonic transmission / reception element of FIG. 本発明の第２実施形態の超音波探触子の超音波送受信素子部分の拡大図である。It is an enlarged view of the ultrasonic transmission / reception element part of the ultrasonic probe of 2nd Embodiment of this invention. 本発明の第３実施形態の超音波探触子の断面図である。It is sectional drawing of the ultrasonic probe of 3rd Embodiment of this invention.

符号の説明Explanation of symbols

２…超音波探触子、３…超音波送受信素子、１１…音響レンズ、１２…接着層、２０…第１基板、２１…シリコン基板、２２…絶縁層、２３…絶縁層、２４…ギャップ、２５…上部電極、２７…下部電極、３１…第２基板、３２…接着層、４１…ダンピング層、４２…接着層。   DESCRIPTION OF SYMBOLS 2 ... Ultrasonic probe, 3 ... Ultrasonic transmitting / receiving element, 11 ... Acoustic lens, 12 ... Adhesive layer, 20 ... 1st board | substrate, 21 ... Silicon substrate, 22 ... Insulating layer, 23 ... Insulating layer, 24 ... Gap, 25 ... Upper electrode, 27 ... Lower electrode, 31 ... Second substrate, 32 ... Adhesive layer, 41 ... Damping layer, 42 ... Adhesive layer.

Claims (7)

シリコン基板及び超音波送受信素子を有する第１基板と、
前記第１基板の上面に設置された音響レンズと、
前記第１基板の下方に設置されたダンピング層とを備える超音波探触子において、
前記第１基板の下面と前記ダンピング層の上面との間に第２基板を設置し、
前記第２基板を、前記第１基板のシリコン基板とほぼ同じ線膨張係数を有し且つ音響インピーダンスが近い材料である窒化アルミニウムまたは４２アロイで形成したこと、
を特徴とする超音波探触子。 A first substrate having a silicon substrate and an ultrasonic transmission / reception element;
An acoustic lens installed on an upper surface of the first substrate;
In an ultrasonic probe comprising a damping layer installed below the first substrate,
Installing a second substrate between the lower surface of the first substrate and the upper surface of the damping layer;
The second substrate is formed of aluminum nitride or 42 alloy which is a material having substantially the same linear expansion coefficient as that of the silicon substrate of the first substrate and close to acoustic impedance,
Ultrasonic probe characterized by 請求項１記載の超音波探触子において、前記第１基板は下部電極を兼ねる前記シリコン基板上に絶縁層、ギャップ及び上部電極を設けて前記超音波送受信素子を構成していること、を特徴とする超音波探触子。   2. The ultrasonic probe according to claim 1, wherein the ultrasonic wave transmitting / receiving element is configured by providing an insulating layer, a gap, and an upper electrode on the silicon substrate, the first substrate also serving as a lower electrode. An ultrasonic probe. 請求項２に記載の超音波探触子において、前記超音波送受信素子は、前記下部電極を兼ねる前記シリコン基板、前記シリコン基板の上面に形成された第１絶縁層、前記第１絶縁層の上面に形成された第２絶縁層、前記第１絶縁層と前記第２絶縁層との間に形成された複数の前記ギャップ、前記第２絶縁層内における前記複数のギャップのそれぞれに対応する位置に形成された複数の前記上部電極とから形成されていること、を特徴とする超音波探触子。   The ultrasonic probe according to claim 2, wherein the ultrasonic transmitting / receiving element includes the silicon substrate also serving as the lower electrode, a first insulating layer formed on an upper surface of the silicon substrate, and an upper surface of the first insulating layer. At a position corresponding to each of the plurality of gaps formed between the first insulating layer and the second insulating layer, and the plurality of gaps in the second insulating layer. An ultrasonic probe comprising: a plurality of the upper electrodes formed. 請求項１に記載の超音波探触子において、前記第１基板は前記シリコン基板上に絶縁層、下部電極、ギャップ及び上部電極を設けて前記超音波送受信素子を構成していること、を特徴とする超音波探触子。   2. The ultrasonic probe according to claim 1, wherein the first substrate includes the insulating layer, the lower electrode, the gap, and the upper electrode on the silicon substrate to constitute the ultrasonic transmitting / receiving element. An ultrasonic probe. 請求項４に記載の超音波探触子において、前記超音波送受信素子は、前記シリコン基板の上面に形成された第１絶縁層、前記第１絶縁層の上面に形成された第２絶縁層、前記第１絶縁層と前記第２絶縁層との間に形成された複数の前記ギャップ、前記第２絶縁層内における前記複数のギャップのそれぞれに対応する下方の位置に形成された前記下部電極、前記第２絶縁層内における前記複数のギャップのそれぞれに対応する上方の位置に形成された複数の前記上部電極とから形成されていること、を特徴とする超音波探触子。   5. The ultrasonic probe according to claim 4, wherein the ultrasonic transmitting / receiving element includes a first insulating layer formed on an upper surface of the silicon substrate, a second insulating layer formed on an upper surface of the first insulating layer, A plurality of the gaps formed between the first insulating layer and the second insulating layer; the lower electrode formed at a lower position corresponding to each of the plurality of gaps in the second insulating layer; An ultrasonic probe comprising: a plurality of upper electrodes formed at upper positions corresponding to the plurality of gaps in the second insulating layer. 請求項１から５の何れかに記載の超音波探触子において、前記第１基板と前記第２基板、前記第２基板と前記ダンピング層をそれぞれ接着層を介して固定したこと、を特徴とする超音波探触子。   The ultrasonic probe according to any one of claims 1 to 5, wherein the first substrate and the second substrate, and the second substrate and the damping layer are fixed via an adhesive layer, respectively. An ultrasonic probe. 請求項２または４に記載の超音波探触子において、前記シリコン基板上の絶縁層が酸化シリコン、窒化シリコンの少なくとも１種以上で形成されていること、を特徴とする超音波探触子。 5. The ultrasonic probe according to claim 2, wherein the insulating layer on the silicon substrate is formed of at least one of silicon oxide and silicon nitride .
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