JP4737130B2 - Semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device including an adhesive member for a chip size package (hereinafter abbreviated as CSP).

In recent years, as information terminal equipment has become lighter and smaller, a small package called CSP (Chip Size Package) or μBGA (Ball Grid Array) that can be mounted at higher density. The development and practical use of this product have been promoted. Among CSPs, packages such as F-BGA and BOC are one of the package structures that are attracting particular attention.

  The connection reliability of the mounting board is one of the most important items. In the CSP, many structures have been proposed and put into practical use in order to ensure connection reliability. For example, in μBGA, an insulating adhesive for reducing thermal stress caused by a difference in thermal expansion coefficient is used between a semiconductor chip and a wiring board called an interposer.

  In recent years, the trend toward lead freezing has become particularly active. Changing the solder material is indispensable for the progress of lead-free as part of environmental measures, and various lead-substitute solder materials have been proposed. However, these new solder materials require a high level of heat resistance for the package because the temperature condition during connection becomes high. Naturally, it is indispensable to ensure sufficient adhesiveness and film strength even in the high temperature region for the adhesive, and the demand for solder reflow resistance is increasing even in packages such as F-BGA and BOC. ing.

  In lead-free packages, solder reflow resistance at 265 ° C. is often required under the JEDEC LEVEL 1 moisture absorption conditions (85 ° C., 85% RH, treatment time 168 hours). The required level is high.

  In general CSP, wire bonding work is performed for the purpose of electrical connection between a substrate and a chip. The wire bonding operation is required to be able to connect the lead wire at an accurate position under a high temperature condition, and to ensure the rigidity of the adhesive member under the high temperature condition.

  In an CSP semiconductor package having an F-BGA or BOC structure, a conventional adhesive has been applied to secure sufficient solder reflow resistance. However, the following problems have occurred.

  For example, in an F-BGA CSP, a circuit-out type structure in which an adhesive is interposed between a smooth surface without a wiring pattern of a wiring board and a semiconductor chip, moisture absorption treatment at 85 ° C., 85 RH%, 12 hr Later, when the solder reflow resistance test of the package was evaluated, peeling frequently occurred between the adhesive / wiring board. As a cause of this, it was confirmed that peeling between the adhesive and the wiring board occurred due to a significant decrease in the high-temperature adhesive force after the moisture absorption treatment at the moisture absorption treatment stage before the reflow treatment.

  An object of this invention is to provide the semiconductor mounting apparatus excellent in solder reflow-proof property.

  The present invention is a semiconductor device provided with an adhesive member between a wiring board and a semiconductor chip, the adhesive member having an adhesive layer, and the adhesive member has a 90 ° peel strength measurement at 265 ° C. Adhesion of adhesive member to semiconductor package substrate before and after moisture absorption treatment (temperature 85 ° C., humidity 85% and holding time 12 hours), and the adhesive force of the adhesive member to the semiconductor package substrate is 30 N / m or more. The present invention relates to a semiconductor device having a force ratio (adhesion after moisture absorption / adhesion before moisture absorption) of 0.8 or more.

  According to the present invention, a semiconductor mounting apparatus having excellent solder reflow resistance is provided.

  Hereinafter, the present invention will be described with reference to embodiments, but the present invention is not limited to the following embodiments. In addition, about what has the same function or a similar function in a figure, the same or similar code | symbol is attached | subjected and description is abbreviate | omitted.

  A semiconductor device according to an embodiment of the present invention includes an adhesive member that can ensure solder reflow resistance. According to such an adhesive member, it is an adhesive member for F-BGA and BOC structures, and has an adhesive member between the wiring board and the semiconductor chip, and in particular, has an adhesive layer between the non-wiring surface of the wiring board and the chip. In the structure, the decrease in high-temperature adhesive force before and after the moisture absorption treatment is small, and the solder reflow resistance can be ensured.

  1 (I), (II), and (III) are sectional views of an adhesive member 1 used in an embodiment of the present invention. The adhesive member 1 may have a single adhesive layer 2 as shown in FIG. 1 (I), or the adhesive layer 2 on both surfaces of the core material 3 as shown in FIG. 1 (II). It may be formed. Moreover, you may interpose other layers, such as another adhesive bond layer and a reinforcement layer, between the core material 3 and the adhesive bond layer 2, for example.

  As the core material 3 used for the adhesive member 1 having a multilayer structure, both organic and inorganic materials can be used without limit. Examples of the organic core material include polyimide, polyamideimide, polyetherimide, polyethersulfone and other polymers formed into a film, polytetrafluoroethylene, a copolymer of ethylene and tetrafluoroethylene, tetrafluoroethylene and hexafluoroethylene. Examples thereof include copolymers of fluoropropylene, copolymers such as a copolymer of perfluoroalkoxyethylene and tetrafluoroethylene, and liquid crystal polymers. More specifically, for example, Upilex 25SGA, 25SPA manufactured by Ube Industries, Ltd. and the like can be mentioned. Examples of the inorganic core material include a silicon wafer, a silicon chip, and glass. The organic core material is preferably in the form of a resin film, and the inorganic core material is preferably a flat plate.

  In addition, as shown in FIG. 1 (III), the adhesive member 1 has an adhesive protective layer 4 for the purpose of protecting the adhesive layer 2 from contamination due to dust or the like, or damage due to impact during transportation. Also good. Further, when the adhesive member is obtained in the form of a long sheet, it is also effective as a means for preventing the adhesive layers from sticking to each other when the adhesive member is wound around the core. In this case, the adhesive protective layer 4 may be covered only on one of the adhesive layers.

  FIG. 2 is a sectional view showing the structure of an F-BGA type CSP 13 as an embodiment of the present invention. The adhesive member 1 is interposed between the non-wiring surface side of the semiconductor mounting wiring board 5 and the semiconductor chip 6. A wiring 8 covered with a protective resist 9 on the wiring surface side of the wiring substrate 5 is electrically connected to the mother board 12 via a solder ball 10.

  As the characteristics required for the adhesive member 1, it is necessary to ensure the adhesion between the non-wiring surface of the wiring board and the semiconductor chip regardless of the moisture absorption treatment conditions and IR reflow heat treatment conditions during the solder reflow resistance test. .

  In particular, lead-free materials tend to raise the solder reflow temperature and make it difficult to ensure PKG reliability, and the package reliability is evaluated under more severe conditions for moisture absorption before the reflow test. This is expected to become more and more general in the future.

  In order to ensure package reliability in the evaluation of solder reflow resistance under severe moisture absorption treatment conditions with lead-free compatible materials, it maintains high adhesion to the wiring board and semiconductor chip, and it also absorbs moisture. It is necessary to secure the adhesive strength under high temperature conditions later.

  As the characteristics required for the adhesive member 1, it is necessary to ensure the bulk strength of the adhesive itself under high temperature conditions and the interfacial adhesion to the adherend in a well-balanced manner.

For the above reason, the adhesive member 1 has an adhesive force in the measurement of 90 ° peel strength to the semiconductor package wiring board and the semiconductor chip of 30 N / m or more under the measurement temperature of 265 ° C. In addition, after the moisture absorption treatment at a temperature of 85 ° C., a humidity of 85% and a treatment time of 12 hours, the adhesive strength when measured under the same measurement temperature of 265 ° C. is the ratio of the adhesive strength after the moisture absorption treatment / adhesive strength before the moisture absorption treatment. The adhesive member is 0.8 or more. More preferably,
The adhesive force to the semiconductor package wiring board and the semiconductor chip is 60 N / m or more under the measurement temperature of 265 ° C., and the adhesive force ratio before and after the moisture absorption treatment is 0.9 or more.

  The adhesive member 1 also has an adhesive effect after thermocompression bonding to the substrate for semiconductor packaging in order to ensure the interfacial adhesive force at the temporary bonding stage between the wiring substrate and the adhesive by an anchor effect in order to ensure solder reflow resistance. Is more than 100 N / m, more preferably 150 N / m or more.

  The thermocompression bonding is a process of attaching the adhesive member 1 to the wiring board with a short thermal history and positioning the adhesive member, and a die bonding process of a semiconductor chip is generally performed after this process.

  Moreover, the adhesive force described here shows the adhesive force in the 90 ° peel strength measurement when thermobonded to the adherend under the conditions of 1 MPa, 120 ° C. and 2 seconds.

In addition, the adhesive member has an adhesive layer with a tackiness of 25 ° C. or higher in order to ensure the adhesiveness of the adhesive to ensure solder reflow resistance and the interfacial adhesion with the wiring board. in an adhesive member is 0.2 g / mm ² or more, and more preferably tackiness is 20 or more. . The tackiness described here is when using a Resca Tack Tester TAC-II, grounding a metal probe with a diameter of 5 mm with a load of 100 gf for 1 second, and then pulling up the probe at a speed of 120 mm / min. The adhesive strength of is shown.

  Moreover, it is preferable that the adhesive member is ensured in hardness under high temperature conditions. This is because the adhesive member or the adhesive layer is too soft under high temperature conditions because it is placed in a high temperature state at the time of wire bonding, which may cause misalignment or bonding failure at the time of wire bonding. Therefore, the adhesive layer of the adhesive member is not limited to the thermosetting and thermoplastic types as long as it can secure the hardness under high temperature conditions.

  For the above reason, the adhesive member has an elastic modulus after heating and curing of preferably 1 MPa or more, more preferably 3 MPa or more under the condition of 200 ° C.

  Moreover, as an upper limit of an elasticity modulus, it is preferable that it is 1000 Mpa or less on 200 degreeC conditions, It is more preferable that it is 500 Mpa or less, It is especially preferable that it is 300 Mpa or less. The combination of the preferable ranges of the elastic modulus is appropriately selected depending on the size of the semiconductor chip to be bonded, the pasting condition, the pasting order, and the like.

  When the adhesive member is obtained as an adhesive member having a multilayer structure, the thickness of the core material 3 and the thickness of the adhesive on both sides can be freely changed and combined. The thickness range of the core material 3 is preferably 25 to 150 μm, the thickness range of the adhesive layer is preferably 5 to 100 μm, the thickness range of the core material 3 is preferably 25 to 75 μm, and the thickness range of the adhesive layer is more preferably 10 to 75 μm. .

  The production of an adhesive member having a multilayer structure can be obtained by bonding an adhesive layer to both surfaces of a base material by thermal lamination. The thermal lamination conditions are preferably conditions that do not change the thickness of the adhesive layer depending on the pressure and temperature conditions, the lamination temperature is preferably 50 to 200 ° C., the pressure is preferably 0.5 N / cm to 10 N / cm, and the lamination temperature is 80 to 150. The temperature and pressure are more preferably in the range of 2 N / cm to 5 N / cm.

  The adhesive layer of the adhesive used in the present invention preferably contains a thermosetting resin in order to have good adhesive force. Examples of such compounds include epoxy resins, cyanate resins, bismaleimide resins, phenol resins, urea resins, melamine resins, alkyd resins, acryl resins, unsaturated polyester resins, diaryl phthalate resins, silicone resins, resorcinol formaldehyde resins, From xylene resin, furan resin, polyurethane resin, ketone resin, triaryl cyanurate resin, polyisocyanate resin, resin containing tris (2-hydroxyethyl) isocyanurate, resin containing triaryl trimellitate, cyclopentadiene Examples include synthesized resins and thermosetting resins by trimerization of aromatic dicyanamide. Among these, an epoxy resin, a cyanate resin, and a bismaleimide resin are preferable, and an epoxy resin is more preferable in that an excellent adhesive force can be given at a high temperature. In addition, these thermosetting resins can be used individually or in combination of 2 or more types.

  As the epoxy resin, it is preferable to use a polyfunctional epoxy resin for the purpose of increasing the Tg. Examples of such polyfunctional epoxy resins include phenol novolac type epoxy resins and cresol novolac type epoxy resins. The phenol novolac type epoxy resin is commercially available from Nippon Kayaku Co., Ltd. under the trade name EPPN-201. The cresol novolac epoxy resin is commercially available from Sumitomo Chemical Co., Ltd. under the trade names ESCN-001 and ESCN-195, and from Nippon Kayaku Co., Ltd. under the trade names EOCN1012, EOCN1025, and EOCN1027. Yes. Further, it is commercially available from Toto Kasei Co., Ltd. under the trade name YDCN-703.

  In order to ensure the heat fluidity of the film, it is also preferable to use an epoxy resin having a bifunctional or higher functionality, preferably having a molecular weight of less than 5000, more preferably a molecular weight of less than 3000. Examples of the bifunctional epoxy resin include bisphenol resins such as bisphenol A type, F type, AD type, AF copolymer type, and S type. These may be used alone or in combination of two or more. it can. Examples of the bisphenol A type and bisphenol F type liquid resin are commercially available from Toto Kasei Co., Ltd. under the trade names YD8125 and YDF170.

  When using a thermosetting resin, it is preferable to use a curing agent in combination, and it is preferable to use a curing accelerator in combination.

  As the curing agent, those usually used as a curing agent for thermosetting resins can be used. For example, one molecule of amine, polyamide, acid anhydride, polysulfide, boron trifluoride, and phenolic hydroxyl group. Examples thereof include bisphenol A, bisphenol F, and bisphenol S, which are compounds having two or more compounds. Of these, phenol novolac resin, bisphenol novolac resin or cresol novolac resin is preferably used because of its excellent resistance to electric corrosion during moisture absorption. It is also preferable to use a condensate of phenol xylene glycol dimethyl ether having low water absorption.

  As such a preferable curing agent, for example, Mitsui from Dainippon Ink & Chemicals, Inc. as Phenolite LF2882, Phenolite LF2822, Phenolite TD-2090, Phenolite TD-2149, Phenolite VH4150, Phenolite VH4170, It is commercially available under the trade names of Millex XLC-LL and XLC-4L from Chemical Co., Ltd.

  The curing accelerator is not particularly limited as long as it cures a thermosetting resin. For example, imidazoles, dicyandiamide derivatives, dicarboxylic acid dihydrazide, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl- Examples thereof include 4-methylimidazole tetraphenylborate and 1,8-diazabicyclo [5.4.0] undecene-7-tetraphenylborate. Among them, imidazoles are preferably used because they exhibit high reaction acceleration.

  Examples of the imidazoles include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate, and the like.

  Imidazoles are commercially available from Shikoku Chemical Industry Co., Ltd. under the trade names 2E4MZ, 2PZ-CN, and 2PZ-CNS. In the range of 0.02 to 10 parts by weight, the curing accelerator does not advance the curing of the adhesive more than necessary and secures long-term stability with respect to a total of 100 parts by weight of the thermosetting resin and the curing agent. It is preferable to add.

  For the adhesive layer of the adhesive member, it is preferable to use a thermoplastic resin for the purpose of ensuring interfacial adhesion to the adherend, storage stability, and good adhesion at low loads. Examples of such thermoplastic resins include polyimide resins, polyamide resins, polyetherimide resins, polyester resins, polyesterimide resins, phenoxy resins, polysulfone resins, polyethersulfone resins, polyphenylene sulfide resins, polyetherketone resins, and acrylics. Phenoxy resin and polyimide resin are preferable in that high adhesive strength can be obtained.

  The phenoxy resin refers to a high molecular weight epoxy resin having a weight average molecular weight of 5000 or more determined by gel permeation chromatography, and, like the epoxy resin, bisphenol A type, F type, AD type, AF copolymer type, Examples include S type. The weight average molecular weight is preferably from 5,000 to 150,000, and more preferably from 10,000 to 80,000 from the viewpoint of melt viscosity and compatibility with other resins.

  The polyimide resin can be usually produced by a condensation reaction of tetracarboxylic dianhydride and diamine in an organic solvent. Tetracarboxylic dianhydride and diamine are preferably used in equimolar or almost equimolar amounts, and the order of addition of each component is arbitrary.

  In this case, first, polyamic acid is formed, and further heated to dehydrate and cyclize to form a polyimide resin. In the present invention, the polyimide resin is a general term for polyimide and its precursor. In addition to polyamide acid, polyimide precursors include those in which polyamide acid is partially imidized.

  The organic solvent to be used is not particularly limited as long as the raw material and the resulting polyimide are completely dissolved. For example, dimethylacetamide, dimethylformamide, N-methyl-2-pyrrolidone, dimethyl sulfoxide, hexamethylphosphorylamide, m-cresol , O-chlorophenol and the like.

  The reaction temperature at the initial stage of the reaction is preferably 0 to 80 ° C, more preferably 0 to 50 ° C. As the reaction proceeds and polyamic acid is produced, the viscosity of the reaction solution gradually increases. The polyimide resin can be obtained by dehydrating and ring-closing the produced polyamic acid by heat treatment or chemical treatment.

  Although the reaction temperature in the case of heat processing changes with the raw materials to be used, 120-250 degreeC is preferable. The reaction is preferably carried out while removing water generated by the dehydration reaction from the system. At this time, water may be removed azeotropically using benzene, toluene, xylene or the like.

  When dehydrating and ring-closing by a chemical method, as the dehydrating agent, for example, acid anhydrides such as acetic anhydride, propionic anhydride, and benzoic anhydride, carbodiimide compounds such as dicyclohexylcarbodiimide, and the like are used. At this time, if necessary, for example, a ring-closing catalyst such as pyridine, isoquinoline, trimethylamine, aminopyridine, imidazole may be used. The ring-closing agent or the ring-closing catalyst is preferably used in an amount of 1 to 8 moles per 1 mole of tetracarboxylic dianhydride.

Examples of tetracarboxylic dianhydrides that can be used include pyromellitic dianhydride, 3,3 ′, 4,4′-diphenyltetracarboxylic dianhydride, and 2,2 ′, 3,3′-diphenyltetracarboxylic acid. Dianhydride, 2,2-bis (3,4-dicarboxyphenyl) propane dianhydride, 2,2-bis (2,3-dicarboxyphenyl) propane dianhydride, 1,1-bis (2, 3-dicarboxyphenyl) ethane dianhydride, 1,1-bis (3,4-dicarboxyphenyl) ethane dianhydride, bis (2,3-dicarboxyphenyl) methane dianhydride, bis (3,4 -Dicarboxyphenyl) methane dianhydride, bis (3,4-dicarboxyphenyl) sulfone dianhydride, 3,4,9,10-perylenetetracarboxylic dianhydride, bis (3,4-dicarboxypheny ) Ether dianhydride, benzene-1,2,3,4-tetracarboxylic dianhydride, 3,4,3 ', 4'-benzophenone tetracarboxylic dianhydride, 2,3,2', 3- Benzophenone tetracarboxylic dianhydride, 2,3,3 ', 4'-benzophenone tetracarboxylic dianhydride, 1,2,5,6-naphthalene tetracarboxylic dianhydride, 2,3,6,7- Naphthalenetetracarboxylic dianhydride, 1,2,4,5-naphthalenetetracarboxylic dianhydride, 1,4,5,8-naphthalenetetracarboxylic dianhydride, 2,6-dichloronaphthalene-1, 4,5,8-tetracarboxylic dianhydride, 2,7-dichloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 2,3,6,7-tetrachloronaphthalene-1, 4,5,8-tetracar Acid dianhydride, phenanthrene-1,8,9,10-tetracarboxylic dianhydride, pyrazine-2,3,5,6-tetracarboxylic dianhydride, thiophenine-2,3,4,5- Tetracarboxylic dianhydride, 2,3,3 ', 4'-biphenyltetracarboxylic dianhydride, 3,4,3', 4'-biphenyltetracarboxylic dianhydride, 2,3,2 ', 3'-biphenyltetracarboxylic dianhydride, bis (3,4-dicarboxyphenyl) dimethylsilane dianhydride, bis (3,4-dicarboxyphenyl) methylphenylsilane dianhydride, bis (3,4- Dicarboxyphenyl) diphenylsilane dianhydride, 1,4-bis (3,4-dicarboxyphenyldimethylsilyl) benzene dianhydride, 1,3-bis (3,4-dicarboxyphenyl) -1, 1,3,3-tetramethyldicyclohexane dianhydride, p-phenylenebis (trimellitate anhydride), ethylenetetracarboxylic dianhydride, 1,2,3,4-butanetetracarboxylic dianhydride, decahydro Naphthalene-1,4,5,8-tetracarboxylic dianhydride, 4,8-dimethyl-1,2,3,5,6,7-hexahydronaphthalene-1,2,5,6-tetracarboxylic acid Dianhydride, cyclopentane-1,2,3,4-tetracarboxylic dianhydride, pyrrolidine-2,3,4,5-tetracarboxylic dianhydride, 1,2,3,4-cyclobutanetetracarboxylic Acid dianhydride, bis (exo-bicyclo [2,2,1] heptane-2,3-dicarboxylic dianhydride) sulfone, bicyclo [2,2,2] oct (7) -ene, 2,3, 5,6-tetraca Boronic acid dianhydride, 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride, 2,2-bis [4- (3,4-dicarboxyphenoxy) phenyl] hexafluoropropane Anhydride, 4,4'-bis (3,4-dicarboxyphenoxy) diphenyl sulfide dianhydride, 1,4-bis (2-hydroxyhexafluoroisopropyl) benzenebis (trimellitic dianhydride), 1, 3-bis (2-hydroxyhexafluoroisopropyl) benzenebis (trimellitic dianhydride), 5- (2,5-dioxotetrahydrofuryl) -3-cyclohexene-1,2-dicarboxylic dianhydride , Tetrahydrofuran-2,3,4,5-tetracarboxylic dianhydride, general formula (1)

(However, n represents an integer of 2 to 20)
And tetracarboxylic dianhydride represented by the general formula (2)

In particular, the tetracarboxylic dianhydride represented by the general formula (1) is preferable in terms of being able to impart low-temperature adhesiveness to the adhesive film. A tetracarboxylic dianhydride represented by the general formula (2) is preferable because of its excellent point. These tetracarboxylic dianhydrides can be used alone or in combination of two or more.

  Further, the content of the tetracarboxylic dianhydride represented by the general formula (1) is preferably 30 mol% or more based on the total tetracarboxylic dianhydride, and more preferably 50% or more in terms of excellent low-temperature adhesiveness. Preferably, 70% or more is very preferable.

  The tetracarboxylic dianhydride of the general formula (1) can be synthesized from, for example, trimellitic anhydride monochloride and the corresponding diol, specifically 1,2- (ethylene) bis (trimellitate dianhydride ), 1,3- (trimethylene) bis (trimellitic dianhydride), 1,4- (tetramethylene) bis (trimellitate dianhydride), 1,5- (pentamethylene) bis (trimellitate dianhydride), 1 , 6- (Hexamethylene) bis (trimellitic dianhydride), 1,7- (heptamethylene) bis (trimellitic dianhydride), 1,8- (octamethylene) bis (trimellitate dianhydride), 1,9- (Nonamethylene) bis (trimellitic dianhydride), 1,10- (decamethylene) bis (trimellitate dianhydride), 1,12- (dodeca Tylene) bis (trimellitate dianhydride), 1,16- (hexadecamethylene) bistrimellitic dianhydride, 1,18- (octadecamethylene) bis (trimellitate dianhydride), etc. Or in combination of two or more.

  Further, the content of the tetracarboxylic dianhydride represented by the general formula (2) is preferably 30 mol% or more based on the total tetracarboxylic dianhydride, and can impart moisture resistance reliability to the adhesive composition. Is more preferably 50% or more, and extremely preferably 70% or more.

Examples of the raw material diamine for the polyimide resin include 1,2-diaminoethane, 1,3-diaminopropane, 1,4-diaminobutane, 1,5-diaminopentane, 1,6-diaminohexane, 1,7- Aliphatic diamines such as diaminoheptane, 1,8-diaminooctane, 1,9-diaminononane, 1,10-diaminodecane, 1,11-diaminoundecane, 1,12-diaminododecane, o- (or m-, p -) Phenylenediamine, 3,3 '-(or 3,4'-) diaminodiphenyl ether, 4,4'-diaminodiphenyl ether, 3,3 '-(or 3,4'-) diaminodiphenylmethane, 4,4'- Diaminodiphenylmethane, 3,3 '-(or 3,4'-, 4,4'-) diaminodiphenyldifluoromethane, 3,3'- Or 3,4'-, 4,4 '-) diaminodiphenyl sulfone, 3,3'-(or 3,4'-, 4,4 '-) diaminodiphenyl sulfide, 3,3'- (or 3,4 '-, 4,4'-) diaminodiphenyl ketone, 2,2-bis (3-aminophenyl) propane, 2,2 '-(3,4'-diaminodiphenyl) propane, 2,2-bis (4- Aminophenyl) propane, 2,2-bis (3-aminophenyl) hexafluoropropane, 2,2- (3,4'-diaminodiphenyl) hexafluoropropane, 2,2-bis (4-aminophenyl) hexafluoro Propane, 1,3- (or 1,4-) bis (3-aminophenoxy) benzene, 1,4-bis (4-aminophenoxy) benzene, 3,3 ′-(1-phenylenebis (1-methylethylene) Leridene)) bisaniline, 3,4 '-(1,4-phenylenebis (1-methylethylidene)) bisaniline, 4,4'-(1,4-phenylenebis (1-methylethylidene)) bisaniline, 2,2 -Bis (4- (3-aminophenoxy) phenyl) propane, 2,2-bis (4- (4-aminophenoxy) phenyl) propane, 2,2-bis (4- (4-aminophenoxy) phenyl) hexa Fluoropropane, bis (4- (4-aminophenoxy) phenyl) hexafluoropropane, bis (4- (3-aminophenoxy) phenyl) sulfide, bis (4- (4-aminophenoxy) phenyl) sulfide, bis ( 4- (3-aminophenoxy) phenyl) sulfone, bis (4- (4-aminophenoxy) phenyl) sulfone, etc. Saturated bond-containing diamine, general formula (3)

(In the formula, Q1 and Q2 each independently represent an alkylene group having 1 to 5 carbon atoms or a phenylene group which may have a substituent, and Q3, Q4, Q5 and Q6 each independently represent 1 carbon atom. -5 represents an alkyl group, phenyl group or phenoxy group, and m represents an integer of 1 to 50)
Among them, the diamine represented by the general formula (3) is preferable in that it can impart low stress property and low-temperature adhesiveness after heat curing to the adhesive composition. These diamines can be used alone or in combination of two or more.

Examples of the siloxane diamine of the general formula (3) include 1,1,3,3-tetramethyl-1,3-bis (4-aminophenyl) disiloxane, 1,1,3,3-tetraphenoxy- 1,3-bis (4-aminoethyl) disiloxane, 1,1,3,3-tetraphenyl-1,3-bis (2-aminoethyl) disiloxane, 1,1,3,3-tetraphenyl- 1,3-bis (3-aminopropyl) disiloxane, 1,1,3,3-tetramethyl-1,3-bis (2-aminoethyl) disiloxane, 1,1,3,3-tetramethyl- 1,3-bis (3-aminopropyl) disiloxane, 1,1,3,3-tetramethyl-1,3-bis (3-aminobutyl) disiloxane, 1,3-dimethyl-1,3-dimethoxy -1,3-bis (4-aminobutyl Disiloxane, 1,1,3,3,5,5-hexamethyl-1,5-bis (4-aminophenyl) trisiloxane, 1,1,5,5-tetraphenyl-3,3-dimethyl-1, 5-bis (3-aminopropyl) trisiloxane, 1,1,5,5-tetraphenyl-3,3-dimethoxy-1,5-bis (4-aminobutyl) trisiloxane, 1,1,5,5 -Tetraphenyl-3,3-dimethoxy-1,5-bis (5-aminopentyl) trisiloxane, 1,1,5,5-tetramethyl-3,3-dimethoxy-1,5-bis (2-amino) Ethyl) trisiloxane, 1,1,5,5-tetramethyl-3,3-dimethoxy-1,5-bis (4-aminobutyl) trisiloxane, 1,1,5,5-tetramethyl-3,3 -Dimethoxy-1,5-bis ( -Aminopentyl) trisiloxane, 1,1,3,3,5,5-hexamethyl-1,5-bis (3-aminopropyl) trisiloxane, 1,1,3,3,5,5-hexaethyl-1 , 5-bis (3-aminopropyl) trisiloxane, 1,1,3,3,5,5-hexapropyl-1,5-bis (3-aminopropyl) trisiloxane, siloxane diamine represented by the following formula These may be used alone or in combination of two or more.

  The content of the siloxane diamine represented by the general formula (3) is preferably 3 mol% or more, more preferably 5 mol% or more, and most preferably 10 mol% or more based on the total diamine. When the diamine content is less than 3 mol%, there is a tendency that characteristics such as low hygroscopicity, low-temperature adhesiveness and low stress after heat curing cannot be exhibited.

  The thermoplastic resin used for the adhesive member is preferably a thermoplastic resin having a Tg of 200 ° C. or less for the purpose of ensuring good adhesion.

  As the adhesive layer of the adhesive member, an epoxy group-containing acryl copolymer can be used. Since the epoxy group-containing acryl copolymer has both thermosetting and thermoplastic properties, it has excellent adhesive strength as an adhesive and stress relaxation as a buffer.

  The epoxy group-containing acryl group copolymer preferably includes glycidyl (meth) acrylate and has a weight average molecular weight of 200,000 or more, and particularly includes 2 to 6% by weight of glycidyl (meth) acrylate. More preferred are those having a Tg of −10 ° C. or higher.

  The trade name HTR-860P-3 commercially available from Teikoku Chemical Industry Co., Ltd. can be used as such an acreyl copolymer. The weight average molecular weight of the epoxy group-containing acryl group copolymer is 200,000 or more, particularly 400,000 to 800, more preferably in terms of less decrease in strength and flexibility in sheet form and film form and increase in tackiness. A range of 000 is preferred.

  The epoxy group-containing acreyl copolymer is preferably used in combination with an epoxy resin. The epoxy resin is preferably 25 to 75 parts by weight and the curing agent is 75 to 25 parts by weight, and is preferably 250 parts by weight or less, more preferably 200 parts by weight or less based on 100 parts by weight in total. When the addition amount of the epoxy group-containing acryl copolymer is large, the amount of the rubber component is increased, the film strength and tackiness are increased, and the handling property tends to be decreased.

  A coupling material can also be used for the adhesive layer of the adhesive member. Examples of such a coupling agent include a silane coupling agent and a titanium coupling agent, but a silane coupling agent is preferable because it is easily available. Examples of the silane coupling agent include γ-glycidoxypropyltrimethoxysilane, γ-mercaptopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, γ-ureidopropyltriethoxysilane, and N-β-aminoethyl. -Γ-aminopropyltrimethoxysilane and the like.

  In the silane coupling agent, γ-glycidoxypropyltrimethoxysilane is NCU A-187, γ-mercaptopropyltrimethoxysilane is NCU A-189, γ-aminopropyltriethoxysilane is NCU A-1100, γ- Ureidopropyltriethoxysilane is NCU A-1160, N-β-aminoethyl-γ-aminopropyltrimethoxysilane is a product name of NCU, A-1120, both of which are commercially available from Nippon Unicar Co., Ltd. Can be used for These can be used alone or in combination of two or more.

  The amount of the coupling agent is preferably 0.05 to 10 parts by weight with respect to 100 parts by weight of the total of the thermosetting resin and the curing agent, from the effects of addition, heat resistance and cost.

  A filler can be further added to the adhesive layer of the adhesive member. Examples of the filler include metal fillers such as silver powder, gold powder, copper powder, and nickel powder, inorganic fillers such as silica, alumina, boron nitride, titania, glass, iron oxide, and ceramics, and organic fillers such as carbon and rubber fillers. Is mentioned.

  The filler can be used properly according to the desired function. For example, a metal filler is added for the purpose of imparting electrical conductivity, thermal conductivity, thixotropy, etc. to the adhesive composition, and a non-metallic inorganic filler is thermal conductivity, low thermal expansion, low hygroscopicity, etc. to the adhesive film. The organic filler is added for the purpose of imparting toughness to the adhesive film. These metal fillers, inorganic fillers or organic fillers can be used alone or in combination of two or more. Especially, a metal filler and an inorganic filler are preferable at the point which can provide the characteristic calculated | required by a semiconductor device, and silver powder is more preferable in a metal filler.

  The inorganic filler component is effective in improving the adhesive properties of the adhesive, and is commercially available from Nippon Aerosil Co., Ltd. under the product names R972, R972V, and R972CF. The amount of filler added is preferably 0.5 to 30% by volume, more preferably 1 to 15% by volume, from the viewpoint of securing the adhesive properties and other physical properties such as elastic modulus. If it is less than 0.5% by volume, the effect of improving fracture toughness tends not to be obtained. If it exceeds 30% by volume, the adhesion, particularly the interfacial adhesion between the adherend and the adhesive member tends to be lowered.

  A semiconductor device in which a semiconductor chip and a tape-like wiring substrate are bonded using an adhesive can ensure high package reliability and high connection reliability and wire bonding properties.

  EXAMPLES The present invention will be specifically described below with reference to examples and comparative examples, but it goes without saying that the present invention is not limited to the following examples.

Example 1
55 parts by weight of a cresol novolac type epoxy resin (epoxy equivalent 220, using YDCN-703 manufactured by Tohto Kasei Co., Ltd.) as an epoxy resin, phenol xylene glycol dimethyl ether condensate (manufactured by Mitsui Chemicals, Inc.) as a curing agent XLC-LL is used) Cyclohexanone is added to 45 parts by weight, and varnish mixed by stirring is mixed with γ-glycidoxypropyltrimethoxysilane as a coupling agent (using NUC A-189 manufactured by Nippon Unicar Co., Ltd.). 5 parts by weight, 4.5 parts by weight of γ-ureidopropyltriethoxysilane (using NCU A-1160 manufactured by Nippon Unicar Co., Ltd.) and 10% by volume of silica filler (R972V manufactured by Nippon Aerosil Co., Ltd.) are mixed and stirred. , Acrylic copolymer containing epoxy group after bead mill dispersion treatment 150 parts by weight of HTR-860-P3 manufactured by Teikoku Chemical Industry Co., Ltd. and 0.4 of 1-cyanoethyl-2-phenylimidazole (used by Shikoku Kasei Co., Ltd., Cuazol 2PZ-CN) as a curing accelerator. Part by weight was added and mixed by stirring to obtain a composition varnish of this adhesive.

  This varnish is applied as a carrier film to a release treated surface of a polyethylene terephthalate film having a thickness of 50 μm and dried at 150 ° C. for 5 minutes, and the film thickness (excluding the thickness of the carrier film) is 50 μm in a B stage state. An adhesive member 1 having a carrier film 3 was prepared. The produced film was slit with a width of 15 mm to produce a reel product having a length of 50 m.

  A tape with a size of 10 mm square is punched from this adhesive member, and it is thermocompression bonded to a tape substrate made of a polyimide material as a semiconductor package substrate under a thermocompression condition of 1 MPa, 120 ° C. for 2 seconds. Thus, a test tape substrate 1 was obtained.

  This test tape substrate 1 was heat-treated at 170 ° C. for 1 hour and then subjected to a 90 ° peel strength measurement at 265 ° C., whereby the adhesive strength was 100 N / m. The test tape substrate 1 was subjected to moisture absorption treatment at 85 ° C. and 85 RH% for 12 hours and then subjected to 90 ° peel strength measurement at 265 ° C., and the adhesive strength was 95 N / m. there were.

Further, when the 90 ° peel strength measurement was performed under the condition of 25 ° C. before subjecting the test tape substrate 1 to the above heat treatment or moisture absorption treatment, the adhesive strength was 45 N / m. was 0.4 g / mm ² was measured for tackiness under, the elastic modulus was measured using a dynamic viscoelasticity measuring apparatus was 4MPa at 150 MPa, 240 ° C. at 35 ° C..

(Example 2)
The adhesive composition varnish used in Example 1 was applied as a carrier film to a release treatment surface of a polyethylene terephthalate film having a thickness of 50 μm, and dried at 155 ° C. for 5 minutes to have a film thickness of 75 μm. A coating film in a B-stage state was formed, and an adhesive member provided with a carrier film was produced. The produced film was slit with a width of 15 mm to produce a reel product having a length of 50 m.

  A tape with a size of 10 mm square is punched from this adhesive member, and it is thermocompression bonded to a tape substrate made of a polyimide material as a semiconductor package substrate under a thermocompression condition of 1 MPa, 120 ° C. for 2 seconds. Thus, a test tape substrate 2 was obtained.

  This test tape substrate 2 was heat-treated at 170 ° C. for 1 hour and then subjected to a 90 ° peel strength measurement at 265 ° C., whereby the adhesive strength was 120 N / m. The test tape substrate 2 was subjected to moisture absorption treatment at 85 ° C. and 85 RH% for 12 hours and then subjected to 90 ° peel strength measurement at 265 ° C., and the adhesive strength was 115 N / m. there were.

Further, when the 90 ° peel strength measurement was performed at 25 ° C. before the test tape substrate 2 was subjected to the above heat treatment and moisture absorption treatment, the adhesive strength was 160 N / m. The tackiness measured below was 0.4 g / mm ² , and the elastic modulus measured using a dynamic viscoelasticity measuring device was 160 MPa at 35 ° C. and 5 MPa at 240 ° C.

(Example 3)
The adhesive composition varnish used in Example 1 was applied as a carrier film to a release treated surface of a polyethylene terephthalate film having a thickness of 50 μm, and dried at 140 ° C. for 5 minutes to give a film thickness of 12. A 5 μm B-stage coating film is formed, an adhesive member provided with a carrier film is produced, and an upirex 25SGA (polyimide resin, manufactured by Ube Industries, Ltd./thickness 25 μm product) is used as a base material. Was laminated on both sides of the substrate under the conditions of a pressure of 0.5 MPa and a temperature of 85 ° C. At this time, the polyethylene terephthalate used as the carrier film is left as it is as the protective film for the adhesive layer on the surface of the adhesive member, and the polyethylene is laminated on the protective film on the other side of the layer. A reel product having a length of 50 m was produced.

  A tape with a size of 10 mm square is punched from this adhesive member, and it is thermocompression bonded to a tape substrate made of a polyimide material as a semiconductor package substrate under a thermocompression condition of 1 MPa, 120 ° C. for 2 seconds. Thus, a test tape substrate 3 was obtained.

  This test tape substrate 3 was heat-treated at 170 ° C. for 1 hour and then subjected to a 90 ° peel strength measurement at 265 ° C., whereby the adhesive strength was 90 N / m. The test tape substrate 3 was subjected to moisture absorption treatment at 85 ° C. and 85 RH% for 12 hours and then subjected to 90 ° peel strength measurement at 265 ° C., and the adhesive strength was 90 N / m. there were.

Further, when the 90 ° peel strength measurement was performed under the condition of 25 ° C. before subjecting the test tape substrate 3 to the above heat treatment or moisture absorption treatment, the adhesive strength was 140 N / m. was 0.35 g / mm ² was measured for tackiness under, the elastic modulus was measured using a dynamic viscoelasticity measuring device was 4.5MPa at 150 MPa, 240 ° C. at 35 ° C..

(Comparative Example 1)
As epoxy resin, 20 parts by weight of bisphenol A type epoxy resin (epoxy equivalent 175, using YD-8125 manufactured by Tohto Kasei Co., Ltd.), Cresol novolac type epoxy resin (epoxy equivalent 220, YDCN- manufactured by Tohto Kasei Co., Ltd.) 703) 40 parts by weight, phenolic novolac resin (using LF2882 manufactured by Dainippon Ink & Chemicals, Inc.) as a curing agent, cyclohexanone is added to 40 parts by weight, and the varnish obtained by stirring and mixing is mixed with an epoxy group-containing acryl compound. (Using HTR-860-P3 manufactured by Teikoku Chemical Industry Co., Ltd.) 300 parts by weight, 1-cyanoethyl-2-phenylimidazole (using cuazol 2PZ-CN manufactured by Shikoku Kasei Co., Ltd.) as a curing accelerator 0.5 weight Γ-glycidoxypropyltrimethoxysila as a coupling agent 1 part by weight (using NUC A-189 manufactured by Nippon Unicar Co., Ltd.), 1 part by weight of γ-ureidopropyltriethoxysilane (using NCU A-1160 manufactured by Nippon Unicar Co., Ltd.), and stirring and mixing. A composition varnish of this adhesive was obtained. Using this varnish, it was applied to the release treated surface of a polyethylene terephthalate film having a thickness of 50 μm as a carrier film and dried at 140 ° C. for 5 minutes to form a B-stage coating film having a thickness of 50 μm. An adhesive member provided with a carrier film was produced. The produced film was slit with a width of 15 mm to produce a reel product having a length of 50 m.

  A tape with a size of 10 mm square is punched from this adhesive member, and it is thermocompression bonded to a tape substrate made of a polyimide material as a semiconductor package substrate under a thermocompression condition of 1 MPa, 120 ° C. for 2 seconds. Thus, a tape substrate 1 for comparison test was obtained.

  The tape substrate 1 for comparative test was heat-treated at 170 ° C. for 1 hour, and then the 90 ° peel strength was measured under the condition of 265 ° C. As a result, the adhesive strength was 25 N / m. Further, the adhesive strength when the 90 ° peel strength measurement was performed under the condition of 265 ° C. after the moisture absorption treatment for 12 hours under the conditions of 85 ° C. and 85RH% was 15 N / m. Met.

Further, when the 90 ° peel strength measurement was performed under the condition of 25 ° C. before subjecting the tape substrate 1 for comparison test to the above heat treatment and moisture absorption treatment, the adhesive strength was 160 N / m, and the tack tester measured 25 ° C. was 0.45 g / mm ² was measured for tackiness under the conditions, the elastic modulus was measured using a dynamic viscoelasticity measuring apparatus was 2MPa at 200 MPa, 240 ° C. at 35 ° C..

(Comparative Example 2)
The adhesive composition varnish used in Comparative Example 1 was applied as a carrier film to a release-treated surface of a polyethylene terephthalate film having a thickness of 50 μm, and dried at 140 ° C. for 5 minutes to give a film thickness of 12. A 5 μm B-stage coating film is formed, an adhesive member provided with a carrier film is produced, and an upirex 25SGA (polyimide resin, manufactured by Ube Industries, Ltd./thickness 25 μm product) is used as a base material. Was laminated on both sides of the substrate under the conditions of a pressure of 0.5 MPa and a temperature of 85 ° C. At this time, the polyethylene terephthalate used as the carrier film is left as it is as the protective film for the adhesive layer on the surface of the adhesive member, and the polyethylene is laminated on the protective film on the other side of the layer. A reel product having a length of 50 m was produced.

  A tape with a size of 10 mm square is punched from this adhesive member, and it is thermocompression bonded to a tape substrate made of a polyimide material as a semiconductor package substrate under a thermocompression condition of 1 MPa, 120 ° C. for 2 seconds. Thus, a tape substrate 2 for comparison test was obtained.

  The tape substrate 2 for comparative test was heat-treated at 170 ° C. for 1 hour, and then a 90 ° peel strength measurement was performed under the condition of 265 ° C. As a result, the adhesive strength was 23 N / m. The adhesive strength when the 90 ° peel strength measurement was performed under the condition of 265 ° C. after the moisture absorption treatment for 12 hours under the conditions of 85 ° C. and 85 RH% was 12 N / m. Met.

Further, when the 90 ° peel strength measurement was performed at 25 ° C. before the test tape substrate 2 was subjected to the above heat treatment and moisture absorption treatment, the adhesive strength was 80 N / m. in a 0.15 g / mm ² was measured for tackiness, the elastic modulus was measured using a dynamic viscoelasticity measuring device was 1.5MPa at 220 MPa, 240 ° C. at 35 ° C..

  A circuit-out type F-BGA arranged on a mother board 12 with solder balls 10 as shown in FIG. 2 using the adhesive members 1 obtained in Examples 1-3 and Comparative Examples 1-2. A CSP (semiconductor device) 13 having a structure was manufactured. In this semiconductor device 20, the adhesive member 1 is used as an adhesive member between the non-wiring surfaces of the semiconductor chip 6 and the semiconductor mounting wiring substrate (semiconductor package substrate) 5, and the semiconductor mounting in which the wiring 8 and the resist 9 are provided. The wiring substrate 5 and the semiconductor chip 6 are wired (wire bonded) with wires 7 and the wires 7 are sealed with a sealing material 11. The wiring 8 is electrically connected to the mother board 12 via the solder ball 10.

  Using this semiconductor device 20, the solder reflow resistance under the condition of 265 ° C. was evaluated after moisture absorption treatment at 85 ° C., 85RH% for 12 hours. The dimensions of the adhesive member 1 were 9 mm × 9 mm square, and the chip dimensions were 10 mm × 10 mm square.

  As for the bonding conditions of the adhesive member 1, the first to third examples were bonded to the back surface of the tape substrate under the conditions of 1.0 MPa, 160 ° C. and 1 second, and the comparative examples 1 and 2 were 1.5 MPa. At 160 ° C. for 1 second, the application was performed. The chip sticking conditions were both 1.5 MPa, 160 ° C., and 1 second. After wire bonding was completed, heat treatment was performed at 170 ° C. for 1 hour, followed by resin sealing and an evaluation package. Produced.

The evaluation results of the solder reflow resistance are shown in Table 1.

  From the evaluation results of Examples 1 to 3, the 90 ° peel strength with respect to the semiconductor package substrate is 30 N / m or more under the condition of the measurement temperature of 265 ° C., the temperature is 85 ° C., the humidity is 85%, and the treatment. After the moisture absorption treatment for 12 hours, when the adhesive strength when measured under the same measurement temperature of 265 ° C. is 0.8 or more in the ratio of the adhesive strength after the moisture absorption treatment / the adhesive strength before the moisture absorption treatment, It was confirmed that no peeling between the adhesive member, the semiconductor chip and the wiring substrate occurred after the reflow treatment, and that good solder reflow resistance could be secured.

  On the other hand, in Comparative Examples 1 and 2, peeling of the adhesive member and the wiring board occurred frequently after the moisture absorption treatment and after the reflow treatment. This is due to a decrease in the interfacial adhesion between the wiring board and the adhesive member due to a lack of adhesive strength retention with respect to moisture absorption treatment, and an insufficient adhesive strength against thermal history during solder reflow resistance evaluation.

  After the solder reflow resistance evaluation of the packages of Examples 1 to 3, peeling between the adhesive member, the substrate, and the chip after the saturated PCT (2.1 atm, 121 ° C.) treatment was evaluated by cross-sectional observation. In the evaluation number of 20, there was no thing which generate | occur | produced peeling.

  Similarly, a temperature cycle property (−55 ° C. to 125 ° C./30 minutes) test was performed at an evaluation number of n = 20, but no peeling between the adhesive, the substrate, and the chip occurred until 1500 cycles. From this, it can be evaluated that the package reliability other than the solder reflow property is sufficient.

  A semiconductor device according to an embodiment of the present invention has good adhesion to a non-wiring surface of a tape substrate in F-BGA, BOC structure CSP, particularly F-BGA structure CSP, and high temperature before and after moisture absorption treatment. Package reliability other than solder reflow resistance is provided because the measured adhesive strength is 0.8 or more in the ratio before and after moisture absorption treatment, and has an adhesive member that ensures good solder reflow resistance. The nature is also high.

1 (I), (II), and (III) are sectional views of an adhesive member used in an embodiment of the present invention. FIG. 2 is a structural sectional view of an F-BGA type CSP as an embodiment of the present invention.

Explanation of symbols

1: Adhesive member 2: Adhesive layer 3: Core material 4: Adhesive protective layer 5: Wiring substrate for semiconductor mounting (substrate for semiconductor package)
6: Semiconductor chip 7: Wire
8: Wiring 9: Resist 10: Solder ball 11: Sealing material 12: Mother board 13: CSP (semiconductor device)

Claims (3)

A semiconductor device comprising an adhesive member between a wiring board and a semiconductor chip,
The adhesive member has an adhesive layer;
The adhesive member contains an epoxy resin and an epoxy group-containing acryl copolymer, and the adhesive member adheres to a semiconductor package substrate when 90 ° peel strength measurement is performed at 265 ° C. Ratio of the adhesive force of the adhesive member to the semiconductor package substrate before and after moisture absorption treatment (temperature 85 ° C., humidity 85% and holding time 12 hours) (adhesion force after moisture absorption treatment) with a force of 30 N / m or more / Adhesive strength before moisture absorption treatment) has an adhesive layer of 0.8 or more ,
The epoxy group-containing acreyl copolymer has a weight average molecular weight of 400,000 to 800,000,
Semiconductors the epoxy resin is the curing agent in 25 to 75 parts by weight relative to total 100 parts by 75-25 weight, the epoxy group-containing Akuriru copolymer is characterized Rukoto included below 250 parts by weight apparatus. 2. The semiconductor device according to claim 1 , wherein the semiconductor device is a chip size package type semiconductor device. The semiconductor device according to claim 1 or 2 adhesive layer is characterized by containing a thermosetting resin.

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