JP4725969B2 - Coaxial vacuum arc vapor deposition source and vapor deposition apparatus using the same - Google Patents

Description

  The present invention relates to a vapor deposition apparatus, and more particularly to a vapor deposition apparatus using a coaxial vacuum arc vapor deposition source.

Metal thin films and dielectric material thin films are used in semiconductor devices and liquid crystal display devices, and such thin films are formed by sputtering, vapor deposition, CVD, or the like.
Among these thin film forming methods, since the film thickness controllability is excellent and a high quality thin film can be formed, in recent years, a vapor deposition apparatus using a coaxial vacuum arc vapor deposition source has attracted attention (for example, see Patent Document 1). .

FIG. 5 is a cross-sectional view showing an overall configuration of a vapor deposition apparatus using a conventional coaxial vacuum arc vapor deposition source.
As shown in FIG. 5, the vapor deposition apparatus 101 has a vacuum chamber 102 connected to a vacuum exhaust system (not shown).
A coaxial vacuum arc vapor deposition source 103 is disposed on the bottom wall in the vacuum chamber 102, and a substrate 105 held by a substrate holder 104 is disposed on the ceiling side in the vacuum chamber 102.

The coaxial vacuum arc deposition source 103 has a cylindrical anode electrode 106 with an opening 160 directed to the substrate holder 104, and in the space inside the anode electrode 106, a deposition material that becomes a cathode electrode 107 is provided.
The vapor deposition material 107 is formed in a cylindrical shape using a thin film material such as metal or carbon, and its central axis is the center of the anode electrode 106 while being electrically connected to the metal base 110. It arrange | positions so that it may correspond with an axis line.

  Here, the vapor deposition material 107 is inserted and fixed so that the tip portion protrudes while being in contact with the inner peripheral surface of the cylindrical insulating member 108, and the outer peripheral surface of the protruding portion of the vapor deposition material 107 is the anode electrode. It is comprised so that the inner peripheral surface of 106 may be opposed.

  Further, the insulating member 108 is inserted and fixed so as to contact the inner peripheral surface of the trigger electrode 109 made of a cylindrical metal, and an insulator 111 is provided between the trigger electrode 109 and the base 110. Thus, the trigger electrode 109 is electrically insulated from the vapor deposition material 107.

  On the other hand, a discharge power source 115 having a trigger power source 112, an arc power source 113, and a capacitor unit 114 is disposed outside the vacuum chamber 102.

  Here, the negative potential side terminals of the trigger power source 112 and the arc power source 113 are commonly connected to the base 110, respectively. On the other hand, the positive potential side terminal of the trigger power source 112 is connected to the trigger electrode 109, and the positive potential side terminal of the arc power source 113 is connected to the anode electrode 106.

  In such a vapor deposition apparatus 101, when the vacuum chamber 102 is evacuated, a negative voltage is applied to the vapor deposition material 107, and a positive pulse voltage is applied to the trigger electrode 109 to generate a trigger discharge, the vapor deposition material 107. Becomes a cathode electrode, an arc discharge is induced between the anode electrode 106 and the vapor deposition material 107, and particles constituting the vapor deposition material 107 are emitted. Then, a thin film can be formed on the substrate 105 by introducing the particles to the substrate 105.

However, in such a conventional technique, when the number of arc discharges increases, the vapor deposition material 107 melts and adheres to the upper surface of the insulating member 108, that is, the end surface 108a of the anode electrode 106 on the opening 160 side. There is a possibility that the vapor deposition material 107 and the trigger electrode 109 are short-circuited, and as a result, arc discharge does not occur.
JP 2001-11606

  The present invention has been made to solve the above-described problems of the conventional technology, and the object of the present invention is to prevent a short circuit between the vapor deposition material and the trigger electrode and perform stable arc discharge. It is an object of the present invention to provide a coaxial vacuum arc deposition source and a deposition apparatus using the same.

The invention according to claim 1, which has been made to achieve the above object, includes a cylindrical anode electrode, and a columnar vapor deposition material disposed in the anode electrode, the center axis of which is substantially coincident with the center axis of the anode electrode. And a cylindrical insulating member arranged around the vapor deposition material, and a cylindrical trigger electrode arranged around the insulating member, and a trigger generated between the trigger electrode and the vapor deposition material A coaxial vacuum arc vapor deposition source that induces an arc discharge between the inner wall surface of the anode electrode and the vapor deposition material by electric discharge, and emits fine particles emitted from the vapor deposition material from an opening of the anode electrode. The end surface of the vapor deposition material on the open side of the anode electrode is disposed so as to be recessed by a first dent reference value with respect to the end surface of the insulating member on the open port side of the anode electrode. The end surface of the mouth opening side of the anode electrode of the trigger electrode, the are arranged so as recessed by a second recessed reference value with respect to the end face of the opening port side of the anode electrode insulating member, said first recess criteria A value is 0.5 mm or more and 1.0 mm or less .
According to a second aspect of the invention of claim 1 Symbol placement, the second recess reference values are those at 1.0mm less than 0 mm.
According to a third aspect, the invention of claim 2, wherein the second recess reference values are those at 0.5mm or 1.0mm or less.
A fourth aspect of the present invention is a vapor deposition apparatus in which the coaxial vacuum arc vapor deposition source according to any one of the first to third aspects is provided in a vacuum chamber.

  In the case of the present invention, since the end surface on the open port side of the anode electrode of the vapor deposition material is disposed so as to be recessed by the first dent reference value with respect to the end surface on the open port side of the anode electrode of the insulating member. Even when the material is melted, it is possible to suppress the deposition material from adhering to the end face of the anode electrode of the insulating member on the opening side, thereby performing a stable arc discharge without causing a short circuit between the deposition material and the trigger electrode. be able to.

In addition, since the end surface of the trigger electrode on the opening side of the anode electrode is disposed so as to be recessed by the second dent reference value with respect to the end surface of the insulating member on the opening side of the anode electrode, Even when a droplet of the vapor deposition material blown to the opening side adheres to the end face of the insulating member, since the electrical insulation between the vapor deposition material and the trigger electrode is maintained, generation of trigger discharge can be maintained. .
And according to the vapor deposition apparatus which provided the coaxial type vacuum arc vapor deposition source mentioned above in the vacuum chamber, it can produce vapor discharge on a board | substrate stably producing an arc discharge.

  According to the present invention, a stable arc discharge can be performed while preventing a short circuit between the vapor deposition material and the trigger electrode.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.
FIG. 1 is a cross-sectional view showing a configuration of an embodiment of a vapor deposition apparatus according to the present invention.
As shown in FIG. 1, the vapor deposition apparatus 1 of this Embodiment has the vacuum chamber 2 connected to the vacuum exhaust system which is not shown in figure.

  Here, a coaxial vacuum arc deposition source 3 to be described later is disposed on the bottom wall in the vacuum chamber 2, and a substrate 5 held by a substrate holder 4 is disposed on the ceiling side in the vacuum chamber 2. Yes.

The coaxial vacuum arc deposition source 3 has a cylindrical anode electrode 6, and an opening 60 (hereinafter referred to as “anode opening 60”) is directed to the substrate holder 4. A vapor deposition material 7 serving as a cathode electrode is provided in the space inside the anode electrode 6.
The vapor deposition material 7 is formed in a cylindrical shape using a thin film material such as metal or carbon, and is attached in a state of being electrically connected to a metal base 10.

Here, the vapor deposition material 7 is disposed such that the central axis thereof coincides with the central axis of the anode electrode 6.
Around the vapor deposition material 7, an insulating member 8 made of a cylindrical insulating material (for example, Al ₂ O ₃ ) is disposed so as to contact the vapor deposition material 7.

Then, the end surface 7a of the anode opening port 60 side of the deposition material 7, inserted into the first recess reference value D ₁ only recessed manner the insulating member 8 to be described later with respect to the end face 8a of the anode opening port 60 side of the insulating member 8 It is fixed.

  Furthermore, a trigger electrode 9 made of a cylindrical metal is provided around the insulating member 8 so as to come into contact with the insulating member 8, and an insulator 11 is provided between the trigger electrode 9 and the base 10. As a result, the trigger electrode 9 is electrically insulated from the vapor deposition material 7.

In this case, the end surface 9a of the anode opening port 60 side of the trigger electrode 9 is arranged so as to be recessed only reference value D ₂ second recess to be described later with respect to the end face 8a of the anode opening port 60 side of the insulating member 8 .

On the other hand, a discharge power source 15 having a trigger power source 12, an arc power source 13 and a capacitor unit 14 is disposed outside the vacuum chamber 2.
Here, the negative potential side terminals of the trigger power source 12 and the arc power source 13 are commonly connected to the base 10 respectively.

  On the other hand, the positive potential side terminal of the trigger power source 12 is connected to the trigger electrode 9, and the positive potential side terminal of the arc power source 13 is connected to the anode electrode 6.

FIG. 2 is an explanatory view showing the dimensional relationship among the vapor deposition material, the insulating member, and the trigger electrode in the present invention, and FIG.
In the case of the present invention, although not particularly limited, from the viewpoint of reliably generating an arc discharge between the anode electrode 6 and the vapor deposition material 7, the end surface 7a of the vapor deposition material 7 on the anode opening 60 side, and an insulating member 8 is preferably configured such that the distance from the end surface 8a on the anode opening 60 side, that is, the first dent reference value D ₁ satisfies 0 mm ≦ D ₁ ≦ 1.0 mm. It is 5 mm ≦ D ₁ ≦ 1.0 mm.

Similarly, although not particularly limited, from the viewpoint of reliably generating arc discharge between the anode electrode 6 and the vapor deposition material 7, the end surface 9a of the trigger electrode 9 on the anode opening 60 side, and the insulating member 8 It is preferable that the distance from the end surface 8a on the anode opening 60 side, that is, the second dent reference value D ₂ is set to satisfy 0 mm ≦ D ₂ ≦ 1.0 mm, and more preferably 0.5 mm. ≦ D ₂ ≦ 1.0 mm.
In addition, this invention becomes especially suitable when the thickness of a cylindrical part uses 0.3-1.0 mm as the insulating member 8. FIG.

According to the embodiment described above, the end faces of the anode opening port 60 side of the deposition material 7 is 7a, recessed only reference value D ₁ first recess to the end face 8a of the anode opening port 60 side of the insulating member 8 Therefore, even when the vapor deposition material 7 is melted, the melted vapor deposition material 7 adheres to the end face 8a on the anode opening 60 side of the insulating member 8 as shown in FIG. Therefore, the vapor deposition material 7 and the trigger electrode 9 are not short-circuited and stable arc discharge can be performed.

Further, since the end surface 9a of the anode opening port 60 side of the trigger electrode 9 is arranged so as to be recessed only reference value D ₂ second recess to the end face 8a of the anode opening port 60 side of the insulating member 8, Even if the droplet of the vapor deposition material 7 blows off to the anode opening 60 side and adheres to the end face 8a of the insulating member 8, the electrical discharge between the vapor deposition material 7 and the trigger electrode 9 is maintained, so that trigger discharge is maintained. Can be maintained.

  And according to the vapor deposition apparatus 1 of this Embodiment which provided the coaxial type vacuum arc vapor deposition source 3 mentioned above in the vacuum chamber 2, it can produce vapor discharge on the board | substrate 5 stably producing arc discharge. .

  FIG. 4 is a cross-sectional view showing the overall configuration of another embodiment of the vapor deposition apparatus using the coaxial vacuum arc vapor deposition source according to the present invention. Reference numerals are assigned and detailed description thereof is omitted.

  In the above embodiment, the vapor deposition material 7 is assumed to be in a solid state. However, according to the present invention, a liquid phase material (mercury) at room temperature or a material that immediately becomes a liquid phase with a little heat applied. Materials such as (gallium, cesium, lead, and indium) and materials whose surface liquefies during discharge (zinc and cadmium) can be formed.

  And in order to perform vapor deposition reliably using such a material, in vapor deposition apparatus 1A of this Embodiment, it seals so that the liquefied material may not leak from cathode container 16 which accommodates vapor deposition material 7A. I have to.

  As shown in FIG. 4, in the present embodiment, for example, between the insulating member 8 and the outer frame portion 16 a of the surrounding cathode container 16 and between the outer frame portion 16 a and the fastening member 18, An O-ring 19 having a property is provided.

  Further, in order to prevent the vapor deposition material 7A from being scattered during the film formation, the current introduction terminal 20 connected to the base portion 16b of the cathode container 16 is made of, for example, copper having good heat conduction. It is made to adhere and fix to the water cooling block 21 outside. The water cooling block 21 is made of, for example, copper having good heat conduction, and is configured so that the cooling water 22 can circulate inside the block.

According to the present embodiment having such a configuration, a material in a liquid phase at room temperature, a material that becomes a liquid phase immediately after a little heat is applied, and a material whose surface liquefies while discharging continues are stabilized. Thus, arc discharge can be generated and vapor deposition can be performed on the substrate 5.
Since other configurations and operational effects are the same as those of the above-described embodiment, detailed description thereof is omitted.

Examples of the present invention will be described below together with comparative examples.
In the apparatus shown in FIG. 1, low melting point material tin (melting point: 232 ° C.) is used, pressure is 10 ⁻⁴ Pa to 10 ⁻⁵ Pa, discharge conditions are capacitor capacity 2200 μF, discharge voltage 50 V, discharge frequency Film formation was performed under 1 Hz.

In this case, the number of arc discharges until the vapor deposition material and the trigger electrode are short-circuited by changing the first and second dent reference values D ₁ and D ₂ described above was measured. The results are shown in Tables 1 and 2.

Here, the first dent reference value D ₁ is set to −1.0 mm, 0 mm, 0.5 mm, 0.8 mm, 1.0 mm, 1.5 mm, and 2.0 mm, while the second dent reference value D ₂ was 0 mm.

Here, the first dent reference value D _{1 is set} to 0 mm, and the second dent reference value D ₂ is set to −1.0 mm, 0 mm, 0.5 mm, 0.8 mm, 1.0 mm, 1.5 mm, and 2. It was set to 0 mm.

As is clear from Tables 1 and 2, when the first dent reference value D ₁ and the second dent reference value D ₂ are set to 0 mm to 1.0 mm, a practical number of discharges are performed. I was able to.
On the other hand, when each of the first dent reference value D ₁ and the second dent reference value D ₂ exceeded 0 mm to 1.0 mm, neither of practical discharges could be performed.

Sectional drawing which shows the whole structure of embodiment of the vapor deposition apparatus using the coaxial type vacuum arc vapor deposition source concerning this invention Explanatory drawing which shows the dimensional relationship of the vapor deposition material in this invention, an insulating member, and a trigger electrode Sectional drawing which shows the state after the discharge in this invention Sectional drawing which shows the whole structure of other embodiment of the vapor deposition apparatus using the coaxial type vacuum arc vapor deposition source which concerns on this invention Sectional drawing which shows the whole structure of the vapor deposition apparatus using the conventional coaxial type vacuum arc vapor deposition source

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Evaporation apparatus 2 ... Vacuum chamber 3 ... Coaxial type vacuum arc evaporation source 6 ... Anode electrode 7 ... Evaporation material 7a ... End surface 8 ... Insulation member 8a ... End surface 9 ... Trigger electrode 9a ... End face 60 …… Anode electrode opening

Claims (4)

A cylindrical anode electrode;
A columnar vapor deposition material disposed in the anode electrode, with a central axis substantially coincident with the central axis of the anode electrode;
A cylindrical insulating member disposed around the vapor deposition material;
A cylindrical trigger electrode disposed around the insulating member;
By trigger discharge generated between the trigger electrode and the vapor deposition material, an arc discharge is induced between the inner wall surface of the anode electrode and the vapor deposition material,
A coaxial vacuum arc evaporation source for emitting fine particles emitted from the vapor deposition material from an opening of the anode electrode;
The vapor deposition material is disposed so that an end surface of the anode electrode on the opening side of the anode electrode is recessed by a first dent reference value with respect to an end surface on the opening port side of the anode electrode of the insulating member. An end surface on the open port side of the anode electrode is disposed so as to be recessed by a second indentation reference value with respect to an end surface on the open port side of the anode electrode of the insulating member ,
A coaxial vacuum arc deposition source in which the first dent reference value is 0.5 mm or greater and 1.0 mm or less . It said second recess reference value, coaxial vacuum arc evaporation source according to claim 1 Symbol placement is 1.0mm or less than 0 mm. Said second recess reference value, coaxial vacuum arc evaporation source according to claim 2, wherein at 0.5mm or 1.0mm or less. The vapor deposition apparatus by which the coaxial type vacuum arc vapor deposition source of any one of Claims 1 thru | or 3 is provided in the vacuum chamber.

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