JP4706121B2 - Film forming apparatus and film forming method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a film forming apparatus and a film forming method for forming a thin film pattern on a surface of a substrate, and in particular, to form a light emitting film pattern on the surface of a transparent substrate in order to manufacture a display panel mounted on a display device, for example. The present invention relates to a film forming apparatus and a film forming method.
[0002]
[Prior art]
2. Description of the Related Art In recent years, as a display medium that replaces a cathode ray tube, for example, an organic EL display that uses a light emission phenomenon of an organic electroluminescent (EL) material as an image display principle is known. A display panel of an organic EL display is manufactured, for example, by forming a light emitting film pattern made of an organic EL material on the surface of a transparent substrate such as glass.
[0003]
As a conventional method for forming this light emitting film pattern, for example, after forming a two-dimensional continuous light emitting film on the surface of a transparent substrate, a desired shape pattern is obtained by using a photolithography process or an etching process. In this way, a method of patterning the light emitting film is exemplified. However, since organic EL materials are generally poor in chemical resistance and heat resistance, it is not appropriate to use a photolithography process using various chemicals such as a developer or an etching process having a high processing temperature for processing the organic EL material.
[0004]
As another conventional method for forming a light emitting film pattern, for example, there is a method in which a film is selectively formed on the surface of a transparent substrate using the mask in a state where the mask is superimposed on the transparent substrate. According to this method, it is possible to form a light emitting film pattern without using various chemicals and without increasing the processing temperature.
[0005]
[Problems to be solved by the invention]
However, the conventional method for forming a light emitting film pattern using a mask has a problem that it is difficult to form a thin film pattern with high accuracy for the following reasons. That is, when the conventional method is used, for example, in order to improve the resolution of the organic EL display, the distance between the openings provided in the mask is reduced in order to reduce the distance between the light emitting film patterns in accordance with the improvement of the resolution. It is necessary to narrow down. At this time, if the distance between the openings (ribs) in the mask becomes too thin as a result of the distance between the openings being narrowed, the physical strength of the ribs is lowered and the mask is easily damaged. When the mask is damaged, the formation accuracy of the thin film pattern is lowered.
[0006]
The present invention has been made in view of such problems, and an object thereof is to provide a film forming apparatus and a film forming method capable of forming a thin film pattern with high accuracy while ensuring the physical strength of the mask. is there.
[0007]
[Means for Solving the Problems]
The film forming apparatus of the present invention is for forming a thin film pattern on the surface of a substrate, and one film forming source disposed opposite to the substrate and a film forming material released from the film forming source pass therethrough. A plurality of openings, and a mask disposed between the film formation source and the substrate so as to be spaced apart from the substrate, and a support that supports the mask and moves the mask between the substrate and the film formation source. The width of the opening of the mask is smaller than the width of the thin film pattern .
[0008]
The film forming method of the present invention is a method of forming a thin film pattern on the surface of a substrate. In a state where one film forming source is disposed opposite to the substrate, the film forming source is connected between the film forming source and the substrate. After disposing a mask having a plurality of openings through which the released film-forming substance passes away from the substrate, the mask is moved between the substrate and the film-forming source by a support that supports the mask, and and facilities the deposition process on a substrate by a film forming source using a mask, in which the width of the opening is to use a smaller than a width of the thin film pattern as a mask.
[0009]
In the film forming apparatus or the film forming method of the present invention, first, in the state where one film forming source is disposed facing the substrate, the film forming material released from the film forming source is placed between the film forming source and the substrate. After a mask having a plurality of openings for passing is disposed away from the substrate, a thin film pattern is formed on the surface of the substrate by performing a film forming process with a film forming source using the mask. The The mask is supported by a support and is movable between the substrate and the film forming source, and the width of the opening of the mask is smaller than the width of the thin film pattern. By disposing the mask away from the substrate, the thin film pattern larger than the size of the opening is formed by utilizing the phenomenon that the film forming material released from the film forming source diffuses after passing through the opening of the mask. Therefore, it is not necessary to increase the opening width according to the formation width of the thin film pattern.
[0010]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
[0011]
First, a film forming apparatus according to an embodiment of the present invention will be described with reference to FIG. FIG. 1 shows an example of a cross-sectional configuration of a film forming apparatus according to this embodiment. The film forming apparatus 10 is for forming a light emitting film pattern on the surface of a transparent substrate such as glass in order to manufacture a display panel mounted on, for example, an organic EL display.
[0012]
The film forming apparatus 10 includes a vacuum chamber 1 made of metal, a film forming source 2 disposed on the bottom surface of the vacuum chamber 1, and a vacuum pump 3 connected to the inside of the vacuum chamber 1 through an exhaust pipe 1H. A stage 4 disposed opposite to the film forming source 2 in the vacuum chamber 1, two poles 5 provided on one surface of the stage 4, and two pieces inserted through the two poles 5, respectively. A support body 6 and a mask 7 supported by these two support bodies 6 are provided. A rectangular transparent substrate K made of glass or the like is mounted on one surface of the stage 4.
[0013]
The film formation source 2 forms a light-emitting film pattern on the surface of the transparent substrate K by discharging a film formation material radially toward the transparent substrate K. This film-forming source 2 performs, for example, a vapor deposition process, and includes a crucible for heating and evaporating a film-forming substance.
[0014]
The vacuum pump 3 exhausts gas (for example, air) filled in the vacuum chamber 1 through the exhaust pipe 1H, and depressurizes the vacuum chamber 1 until a desired vacuum state is obtained.
[0015]
The stage 4 holds the transparent substrate K on the surface facing the film forming source 2 and has, for example, a disk-like planar structure. The stage 4 is fixed to the vacuum chamber 1 via a fixed shaft 4J, for example.
[0016]
The support 6 supports the mask 7 and has, for example, a “U” -shaped cross-sectional structure that can hold the mask 7. The support 6 is movable in the vertical direction in the figure along the pole 5 between the film forming source 2 and the stage 4 in a state where the mask 7 is supported.
[0017]
The mask 7 has a plurality of stripe-shaped openings 7U, for example, and is made of a metal such as stainless steel. The shape of the opening 7U corresponds to the shape of the light emitting film pattern to be formed on the surface of the transparent substrate K, and the size (opening width Wm1 (μm)) is the size of the light emitting film pattern (formation). It is smaller than the width Wp1 (μm) (see FIG. 2 described later) (Wm1 <Wp1). In the mask 7, the width (rib width) of the portion (rib) 7R between the openings 7U is Wf1 (μm).
[0018]
The mask 7 is located at a predetermined position between the film forming source 2 and the stage 4 in a state where it is supported by the support 6. The “predetermined position” is, for example, a position where the distance from the upper end of the mask 7 to the film forming source 2 is H (μm) and the distance from the upper end of the mask 7 to the transparent substrate K is D (μm). is there.
[0019]
In addition to the series of components described above, the film forming apparatus 10 operates, for example, a microcomputer for controlling the film forming apparatus 10 as a whole, a driving device for moving the support 6, and the film forming apparatus 10. It is configured to include a power supply for the purpose.
[0020]
Next, a film forming method according to an embodiment of the present invention using the film forming apparatus shown in FIG. 1 will be described with reference to FIGS. Hereinafter, for example, a case where a light emitting film pattern having a formation width Wp1 = about 200 μm is formed on the surface of the transparent substrate K will be described.
[0021]
When forming the light emitting film pattern, the following preparation work is performed by an operator or the like (see FIG. 1). That is, first, after the transparent substrate K made of, for example, glass or the like is cleaned, it is mounted on one surface of the stage 4. Subsequently, for example, after a mask 7 having a plurality of openings 7U with an opening width Wm1 = about 160 μm is prepared, the mask 7 is supported by two supports 6 so as to be parallel to the transparent substrate K. . Finally, after the sealed state of the vacuum chamber 1 is confirmed, air or the like filled in the vacuum chamber 1 is exhausted through the exhaust pipe 1H by the vacuum pump 3, and the inside of the vacuum chamber 1 is in a desired vacuum state (for example, about The pressure is reduced until 10 ⁻⁴ Pa).
[0022]
After completing the preparatory work, first, as shown in FIG. 1, the support 6 is moved along the pole 5 while the mask 7 is supported, and the mask 7 is moved between the film forming source 2 and the stage 4. Adjust the position. When adjusting the position of the mask 7, for example, the distance H from the upper end of the mask 7 to the film forming source 2 is set to be four times the distance D from the upper end of the mask 7 to the stage 4 (distance H : Distance D = 4: 1).
[0023]
Subsequently, as shown in FIG. 2, a film forming process is performed on the transparent substrate K by the film forming source 2 using the mask 7. The film forming material heated and evaporated in the film forming source 2 and emitted toward the transparent substrate K passes through the openings 7U of the mask 7 and selectively reaches the transparent substrate K, thereby emitting light on the surface of the transparent substrate K. A film pattern 20 is selectively formed. At this time, the formation width Wp1 of the light emitting film pattern 20 is larger than the opening width Wm1 (= about 160 μm) of the opening 7U provided in the mask 7, and becomes about 200 μm.
[0024]
After the film forming process is completed, the vacuum pump 3 is operated, and the gas containing the film forming material filled in the vacuum chamber 1 is exhausted through the exhaust port 1H. The transparent substrate K on which the light emitting film pattern 20 is formed is removed from the stage 4 by an operator or the like in a state where the pressure in the vacuum chamber 1 is substantially equal to the external pressure (atmospheric pressure).
[0025]
As described above, in the film forming apparatus and the film forming method according to the present embodiment, in the state where the mask 7 is disposed apart from the transparent substrate K between the film forming source 2 and the transparent substrate K, Since the mask 7 is used to perform the film forming process on the transparent substrate K by the film forming source 2, the light emitting film pattern 20 is highly accurate while ensuring the physical strength of the mask 7 for the following reason. Can be formed.
[0026]
FIG. 3 illustrates an outline of a conventional method for forming the light emitting film pattern 120 using the mask 107 having a plurality of openings 107U (opening width Wm2). In this conventional forming method, in a state where the mask 107 is superimposed on the surface of the transparent substrate K, a film forming process is performed on the transparent substrate K by the film forming source 102 using the mask 107, whereby the transparent substrate K. A light emitting film pattern 120 is formed on the surface. At this time, the formation width Wp2 of the light emitting film pattern 120 coincides with the opening width Wm2 of the opening 107U provided in the mask 107 (Wp2 = Wm2). In order to form the light emitting film pattern 120 so as to have a relatively large formation width Wp2 (= about 200 μm) in order to improve the resolution of the organic EL display by narrowing the distance, the opening width Wm2 corresponding to the formation width Wp2 A mask 107 having (= about 200 μm) must be used. However, if the opening width Wm2 is increased, the width (rib width) Wf2 of the rib 107R in the mask 107 is reduced accordingly. Therefore, if the rib 107R is too thin, the physical strength of the rib 107 is reduced. As a result, the mask 107 is easily damaged. When the mask 107 is damaged, the formation accuracy of the light emitting film pattern 120 is lowered.
[0027]
On the other hand, in the present embodiment, as shown in FIG. 2, since the film forming process is performed in a state where the mask 7 is separated from the transparent substrate K, the film forming material released from the film forming source 2 is used. It is possible to form the light emitting film pattern 20 having the formation width Wp1 larger than the opening width Wm1 by utilizing the phenomenon of diffusion after passing through the opening 7U of the mask 7. The formation principle of the light emitting film pattern 20 will be described from the following equation (1). That is, there is a relationship expressed by the following equation (1) between the opening width Wm1 and the formation width Wp1. By modifying this equation (1), the following equation (2) is obtained for the opening width Wm1. Led.
[0028]
H: Wm1 / 2 = (H + D): Wp1 / 2 (1)
Wm1 = (H / H + D) · Wp1 (2)
[0029]
From equation (2), when the light emitting film pattern 20 is formed by separating the mask 7 from the transparent substrate K (D> 0), the opening width Wm1 of the opening 7U provided in the mask 7 is set to It can be seen that it can be made smaller than the formation width Wp1. Specifically, as described above, when the position of the mask 7 is set so that the distance H is four times the distance D (H: D = 4: 1), the formation width is obtained from the equation (2). In order to form the light emitting film pattern 20 with Wp1 = about 200 μm, the mask 7 having the opening 7U with the opening width Wm1 = about 160 μm may be used. In such a case, unlike the conventional case (see FIG. 3) in which the formation width Wp2 (about 200 μm) and the opening width Wm2 (about 200 μm) coincide with each other, the opening width Wm1 (about 160 μm) is formed. Since the width Wp1 (about 200 μm) is smaller by about 40 μm, the rib width Wf1 of the mask 7 is secured by this amount (Wf2> Wf1), and the physical strength of the mask 7 can be secured. As a result, the light emitting film pattern 20 can be formed with high accuracy while ensuring the physical strength of the mask 7.
[0030]
In the present embodiment, since the mask 7 is supported by the support 6 that can move along the pole 5, the position of the mask 7 can be determined by moving the support 6 while the mask 7 is supported. It is possible to finely adjust the (distance H, D), the parallelism of the mask 7 with respect to the transparent substrate K, and the like, which also contributes to the high accuracy of the formation of the light emitting film pattern 20 from this viewpoint.
[0031]
In the present embodiment, the mask 7 is supported by the support 6 that can move along the pole 5, but the present invention is not necessarily limited thereto. FIG. 4 shows a configuration of a film forming apparatus as a modification regarding the configuration of the film forming apparatus according to the present embodiment. In the film forming apparatus 10, for example, the mask 7 is supported by two block-shaped supports 30 disposed on the stage 4. Even in such a case, the same effect as in the case of the above-described embodiment can be obtained. However, if fine adjustment of the position or the like of the mask 7 after installation is required, the mask 7 is supported by the support body 6 movable along the pole 5 as described in the above embodiment. preferable.
[0032]
In the present embodiment, the film forming source 2 includes a crucible that performs a vapor deposition process. However, the present invention is not limited to this, and the film is formed toward the transparent substrate K in the same manner as the crucible. Any material other than the crucible may be used as long as the material is released radially.
[0033]
The present invention has been described with reference to the embodiment. However, the present invention is not limited to the above embodiment, and various modifications can be made. For example, the configuration of the film forming apparatus and the details of the film forming method described in the above embodiment (position of the mask 7 (distance H, D), opening width Wm1, rib width Wf1, forming width Wp1), etc. are not necessarily limited. The present invention is not limited to the one described in the above embodiment, and the mask 7 is used in a state where the mask 7 is disposed apart from the transparent substrate K between the film forming source 2 and the transparent substrate K. As long as the film forming process can be selectively performed on the transparent substrate K by the film source 2, it can be freely changed.
[0034]
Moreover, although the case where this invention is applied to formation of the light emission film pattern for manufacturing the display panel mounted in an organic EL display was demonstrated in the said embodiment, it is not necessarily restricted to this, Organic EL It can also be applied to the formation of light-emitting film patterns for manufacturing display panels mounted on various display devices other than displays and thin film patterns for manufacturing products in various fields other than display devices. It is. Even in such a case, the same effect as in the case of the above-described embodiment can be obtained.
[0035]
【The invention's effect】
As described above, according to the film forming apparatus or film forming method of the present invention, in the state where one film forming source is disposed facing the substrate, the film is released from the film forming source between the film forming source and the substrate. A mask having a plurality of openings through which the deposited film-forming substance passes is disposed away from the substrate, and a film-forming process is performed on the substrate by a film-forming source using the mask. At this time, the mask can be moved between the substrate and the film forming source by the support, and the width of the opening of the mask is smaller than the width of the thin film pattern. Thereby, it is possible to form a thin film pattern having a width larger than the width of the opening provided in the mask while ensuring the width of the portion (rib) between the openings in the mask. Therefore, the thin film pattern can be formed with high accuracy while ensuring the physical strength of the mask. Further, the position of the mask and the parallelism with respect to the substrate can be finely adjusted.
[Brief description of the drawings]
FIG. 1 is a diagram illustrating an example of a configuration of a film forming apparatus according to an embodiment of the present invention.
FIG. 2 is a diagram for explaining a film forming method according to an embodiment of the present invention.
FIG. 3 is a diagram for explaining a conventional film forming method.
FIG. 4 is a diagram illustrating a configuration of a film forming apparatus as a modification of the film forming apparatus according to the embodiment of the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Vacuum chamber, 1H ... Exhaust pipe, 2 ... Film formation source, 3 ... Vacuum pump, 4 ... Stage, 4J ... Fixed shaft, 5 ... Pole, 6,30 ... Support, 7 ... Mask, 7U ... Opening, 10 DESCRIPTION OF SYMBOLS ... Film-forming apparatus, 20 ... Light emitting film pattern, K ... Transparent substrate, Wf1 ... Rib width, Wm1 ... Opening width, Wp1 ... Formation width.

Claims (6)

A film forming apparatus for forming a thin film pattern on a surface of a substrate,
One deposition source disposed opposite the substrate;
A plurality of openings for allowing a film-forming substance released from the film-forming source to pass through, and a mask disposed apart from the substrate between the film-forming source and the substrate;
A support that supports the mask and moves the mask between the substrate and the deposition source ;
The width of the opening of the mask is smaller than the width of the thin film pattern,
Deposition device.   The film forming apparatus according to claim 1, wherein the film forming source forms a thin film pattern capable of emitting light.   The film forming apparatus according to claim 1, wherein the thin film pattern is a light emitting film pattern used in an organic electroluminescent (EL) display. A film forming method for forming a thin film pattern on a surface of a substrate,
A mask having a plurality of openings for allowing a film-forming substance released from the film-forming source to pass between the film-forming source and the substrate in a state where one film-forming source is disposed opposite to the substrate. Is disposed away from the substrate,
With moving the mask between the deposition source and the substrate by a support for supporting the mask, and facilities the film formation process on the substrate by the film forming source using the mask,
A mask having a width smaller than that of the thin film pattern is used as the mask.
Film forming method. The film-forming method of Claim 4 using what forms the thin film pattern which can light-emit as said film-forming source. The film forming method according to claim 4 , wherein the thin film pattern is a light emitting film pattern used for an organic EL display.

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