JP4701812B2 - Functional film pattern forming device - Google Patents

Description

  The present invention relates to a functional film pattern forming apparatus, a functional film pattern forming method, and an electronic apparatus.

  Conventionally, a photolithography method is generally known as a method for forming functional film patterns of various devices. It can be said that this method is wasteful, such as throwing away most of the material. Therefore, as a method for forming a functional film pattern in place of this photolithography method, direct drawing by a screen printing method, a microdispensing method, a droplet discharge method (inkjet method) or the like is known (for example, see Patent Document 1). .

  In order to perform such direct drawing, unlike the sputtering method, it is necessary to use a functional material that is made into fine particles and dispersed in a solution, or made into ink (liquefied) by dissolving in a suitable solvent. is there. For this reason, since the performance as a functional film pattern cannot be exhibited simply by forming a pattern by direct drawing, a baking process including drying and sintering using an oven or the like as a post-process to obtain the desired performance Is required.

Since the current firing process requires a time of about 30 minutes to 1 hour or more, this firing process is a factor of reducing the throughput. In order to avoid this, as a baking process with a fast processing time instead of an oven or the like, an electromagnetic wave irradiation method in which the film pattern patterned by direct drawing is irradiated with electromagnetic waves and the above baking process is performed by the action of heat generated by photothermal conversion. Can be considered.
Japanese Patent Application Laid-Open No. 2002-261048

  However, when the time for irradiating electromagnetic waves is short or when the irradiation intensity is low, the functional material may not be sufficiently baked. An unfired portion in which the functional material is not sufficiently fired has a high resistance value, and may be locally heated and disconnected. In addition, when the irradiation time is long or the irradiation intensity is too strong, the functional material may be damaged, and the performance may be deteriorated. As a result, there is a problem that the yield of various devices decreases.

  The present invention has been made paying attention to such conventional problems, and its purpose is to provide a functional film pattern forming apparatus capable of forming a pattern having a desired functionality by being surely baked. It is providing the formation method of an electroconductive film pattern, and an electronic device.

The functional film pattern forming apparatus according to the present invention includes a patterning means for forming a film pattern by attaching a functional liquid material to a substrate, and irradiating the film pattern formed on the substrate with electromagnetic waves to form a functional film pattern. Based on information on the electromagnetic wave irradiation means to be formed, detection means for detecting the electromagnetic wave absorption degree of the film pattern attached to the substrate, and the electromagnetic wave absorption degree, the electromagnetic wave irradiation amount from the electromagnetic wave irradiation means Control means for controlling the detection, the detection means includes a detection electromagnetic wave emission means for emitting a detection electromagnetic wave, and a reflected wave detection means for detecting a reflected wave of the detection electromagnetic wave reflected by the film pattern. The electromagnetic wave for detection is an electromagnetic wave that is absorbed by the film pattern and not absorbed by the functional film pattern. To.

According to this, after forming a film pattern on the substrate, a desired functional film pattern is formed by firing the functional liquid material by irradiating the film pattern with electromagnetic waves. At this time,
By storing the absorption spectrum of the electromagnetic wave when the functional liquid material is sufficiently baked, and comparing the absorption spectrum of the electromagnetic wave with the absorption spectrum of the functional liquid material detected by the detection means It is determined whether the film pattern actually formed on the substrate has been sufficiently baked. Then, the unfired portion of the film pattern can be eliminated by irradiating the electromagnetic wave until the absorption spectrum of the electromagnetic wave obtained when the functional liquid material adhered to the substrate is sufficiently fired. As a result, it is possible to form a functional film pattern having desired characteristics.

Furthermore, the absorption intensity of the electromagnetic wave (detection electromagnetic wave) emitted from the detection electromagnetic wave emission means provided separately from the electromagnetic wave irradiation means, not the electromagnetic wave emitted from the electromagnetic wave irradiation means (that is, the firing electromagnetic wave). Based on this, it is determined whether or not the film pattern has been sufficiently baked. Therefore, it is possible to determine whether or not the film pattern has been sufficiently baked by using an electromagnetic wave having a wavelength that is not included in the electromagnetic wave emitted from the electromagnetic wave irradiation means (baking electromagnetic wave). For this reason, for example, an electromagnetic wave that is not included in the electromagnetic wave (firing electromagnetic wave) emitted from the electromagnetic wave irradiation means can be used as the electromagnetic wave for detection.

Furthermore, by detecting the intensity of the reflected wave of the detection electromagnetic wave, it can be determined whether or not the film pattern has been sufficiently baked.

In this functional film pattern forming apparatus, the detection means may be provided around the electromagnetic wave irradiation means and move in synchronization with the electromagnetic wave irradiation means.
According to this, it is possible to observe the degree of absorption of the electromagnetic wave by irradiating the irradiation region with the electromagnetic wave (that is, the firing electromagnetic wave) while irradiating the film pattern with the electromagnetic wave from the electromagnetic wave irradiation means. For this reason, it is possible to determine whether the film pattern has been sufficiently baked on the spot.

In this functional film pattern forming apparatus, the electromagnetic wave emitted from the electromagnetic wave irradiation means may be laser light.
According to this, a functional film pattern having a fine shape or a functional film pattern having a complicated shape can be formed.

In this functional film pattern forming apparatus, the patterning means may be an apparatus for forming the film pattern by a liquid process method.
According to this, when forming a pattern with a desired shape by the liquid process method, the functional liquid material can be sufficiently baked, so that a functional film pattern having desired characteristics can be formed. Here, examples of the liquid process method include an ink jet method, a microdispensing method, and a screen printing method.

Hereinafter, embodiments embodying the present invention will be described with reference to the drawings.
(First embodiment)
First, a laser film forming apparatus 20 as a functional film pattern forming apparatus according to the first embodiment will be described with reference to FIGS.

  The laser film forming apparatus 20 forms a film pattern by attaching a functional liquid material to a substrate, irradiates the film pattern with laser light, and bakes the film pattern with heat generated by photothermal conversion by absorption of the laser light. It proceeds to form a wiring pattern as a functional film pattern.

FIG. 1 is a diagram for explaining the overall configuration of a laser film forming apparatus 20 according to the present embodiment.
As shown in FIG. 1, a laser deposition apparatus 20 includes a carriage 22 on which a substrate 21 is placed, a droplet discharge head 23 as a patterning unit that forms a film pattern by depositing a functional liquid material on the substrate 21, A laser beam irradiation head 24 as electromagnetic wave irradiation means, a reflection / absorption measuring device 25 as detection means, and a control unit 26 as control means are provided.

  The carriage 22 is driven by an X-direction drive motor and a Y-direction drive motor (not shown), and can move in the XY directions with respect to the droplet discharge head 23. In FIG. 1, the carriage 22 moves in the X arrow direction at a predetermined speed to transport the substrate 21 in the X arrow direction (substrate traveling direction).

The droplet discharge head 23 includes a discharge nozzle 23 </ b> A at a position facing the substrate 21. The droplet discharge head 23 discharges a droplet 30 as a functional liquid material from the discharge nozzle 23A toward the substrate 21 (along the arrow Z direction in FIG. 1). As shown in enlarged portions 60 and 61 in FIG. 1, the droplet 30 is obtained by dissolving metal into fine particles (metal fine particles 31) in a solvent 32 to form ink (liquefaction). Since the metal fine particles 31 stick together and melt as they are, each metal fine particle 31 is coated with a protective film made of a dispersant 33 and dispersed. In the present embodiment, the metal fine particles 31 are silver fine particles.

  The droplet discharge head 23 moves in the XY direction together with the carriage 22 and discharges the droplet 30 onto the substrate 21 while controlling the relative position with the substrate 21. As a result, a film pattern 40A having a desired shape is formed on the substrate 21. As described above, in this embodiment, the film pattern 40A is formed by using a so-called ink jet method in which the metal fine particles 31 are dissolved in the solvent 32 to form an ink and ejected. Yes. It should be noted that a liquid repellent treatment is performed on necessary portions on the substrate 21 so that the droplets 30 that have landed on the substrate 21 do not spread and stay in a desired position.

  The laser light irradiation head 24 is provided above the carriage 22 (in the anti-Z arrow direction). The laser light irradiation head 24 includes a laser main body 51 and a condenser lens 52. The laser beam irradiation head 24 is configured to follow the droplet discharge head 23 and is integrally formed with the droplet discharge head 23, for example.

  The laser main body 51 continuously emits the firing laser light 50 having a predetermined wavelength. The firing laser light 50 is, for example, a known semiconductor laser light, and in the present embodiment, is a second harmonic (wavelength λ = 532 nm) of an Nd: YAG laser.

  The condensing lens 52 is a lens for condensing the firing laser light 50 emitted from the laser main body 51 so as to concentrate and irradiate a predetermined region (irradiation region) A on the film pattern 40A. In this embodiment, the condensing lens 52 is a single lens. The condensing lens 52 may be configured by combining a plurality of lenses, that is, an optical system. And in the film | membrane pattern 40A in the irradiation area | region A irradiated with the laser beam 50 for baking which passed the condensing lens 52, photothermal conversion arises and it heats and the solvent 32 and the dispersing agent 33 in the film | membrane pattern 40A are removed. In addition, the metal fine particles 31 are melted together to form the wiring pattern 40B.

  The reflection / absorption measuring device 25 is provided around the laser beam irradiation head 24. The reflection / absorption measuring device 25 includes a detection electromagnetic wave emission means 25A and a reflected wave detection means 25B. The reflection absorption measuring device 25 is configured to follow the laser light irradiation head 24 and is connected to the laser light irradiation head 24 by a member (not shown), for example.

  The detection electromagnetic wave emitting means 25 </ b> A emits the detection electromagnetic wave W <b> 1 toward the irradiation area A where the firing laser light 50 is irradiated. This detection electromagnetic wave W1 has a wavelength different from that of the firing laser beam 50 and is absorbed by the film pattern 40A, and on the other hand, is not absorbed by the wiring pattern 40B formed by firing. is there. The detection electromagnetic wave W1 of the present embodiment is set so as to emit an electromagnetic wave having the same wavelength as the wavelength Lp (see FIG. 4) at which plasmon absorption of the film pattern 40A occurs. The detection electromagnetic wave W <b> 1 is an electromagnetic wave having a wavelength different from the wavelength (wavelength λ = 532 nm) of the firing laser light 50 emitted from the laser body 51.

The reflected wave detecting means 25B detects an electromagnetic wave (hereinafter simply referred to as “reflected wave”) W2 reflected from the irradiation area A of the film pattern 40A among the detecting electromagnetic waves W1 emitted from the detecting electromagnetic wave emitting means 25A. Is to do. Then, the reflected wave detection means 25B, when the wavelength of the detected reflected wave W2 is different from the detection electromagnetic wave W1 or when no reflected wave W2 is detected, the first detection signal S1 indicating that to the control unit 26. Is output. Moreover, even if it is an electromagnetic wave of the same wavelength as the electromagnetic wave W1 for detection, the intensity | strength predetermined value (for example, for example)
In the case of 20% or less of the output of the detection electromagnetic wave W1 emitted from the detection electromagnetic wave emission means 25A), the first detection signal S1 similar to the above is set to be output to the control unit 26. .

  The reflected wave detection means 25B has the same intensity as that of the detected electromagnetic wave W1, and the intensity of the detected electromagnetic wave W1 emitted from the laser light irradiation head 24 is set in advance. Is greater than the prescribed value (for example, 20% of the power of the detection electromagnetic wave W1 when emitted from the detection electromagnetic wave emission means 25A), the second detection signal S2 indicating that is output to the control unit 26.

  Therefore, the degree of absorption of the detection electromagnetic wave W1 in the irradiation area A can be determined depending on whether the detection signal output from the reflected wave detection means 25B is the first detection signal S1 or the second detection signal S2.

  The control unit 26 includes a CPU (not shown), a timer clock, a memory storing the shape and position of the film pattern 40A, and the like. Based on the detection signals S1, S2 and the like output from the reflection / absorption measuring device 25, control signals are output to each of the carriage 22, the droplet discharge head 23, and the laser light irradiation head 24, and the entire system including them. It is designed to control the entire system.

  Specifically, the control unit 26 stops the movement of the carriage 22 and continuously outputs the firing laser light 50 from the laser light irradiation head 24 while the first detection signal S1 is input. The control signal is output. Further, the control unit 26 outputs a control signal for moving the carriage 22 until the laser beam irradiation head 24 reaches a position facing the next irradiation area A while the second detection signal S2 is being input. In addition, a control signal for discharging a predetermined amount of droplets 30 is output. That is, the control unit 26 controls the irradiation amount of the firing laser light 50 on the film pattern 40A based on the first and second detection signals S1 and S2.

Next, the photothermal conversion characteristics of the film pattern 40A will be described with reference to FIGS.
2 is an absorption spectrum of the droplet 30 (functional liquid material), FIG. 3 (A) is an absorption spectrum caused by the solvent 32, FIG. 3 (B) is an absorption spectrum caused by the dispersant 33, FIG. 3C shows an absorption spectrum caused by the metal fine particles (solute) 31. Therefore, the absorption spectrum of the droplet 30 (functional liquid material) includes an absorption spectrum caused by the solvent 32, an absorption spectrum caused by the dispersant 33, and an absorption spectrum caused by the metal fine particles 31 that are fine particles (solute). Is almost equal to the superposition of When the film pattern 40A is irradiated with the firing laser light 50, the film pattern 40A absorbs the laser light 50, and the light energy is converted into thermal energy so that the film pattern 40A is fired to become a wiring pattern 40B showing conductivity. However, the firing process can be divided into the following three firing processes (early firing stage, middle firing stage and late firing stage).

FIG. 4 is an absorption spectrum of the film pattern 40A for each baking process.
Early firing: In this early firing, the solvent 32 and the dispersant 33 in the functional liquid material are decomposed and evaporated. As shown in FIG. 4A, in the initial stage of firing, absorption caused by the metal fine particles 31, the solvent 32, and the dispersant 33 occurs, and this is a process in which laser light is most easily absorbed. Then, at the initial stage of firing, an absorption spectrum due to plasmon absorption that appears uniquely at the wavelength Lp due to the fine metal fine particles 31 scattered in the functional liquid material (an absorption spectrum indicated by an arrow in FIG. 4A). ) Is detected.

Middle firing stage: In this middle firing stage, decomposition and evaporation of the solvent 32 and the dispersant 33 in the functional liquid material are promoted, and the residual amount of the solvent 32 and the dispersant 33 is reduced. As a result, the absorption spectrum due to the solvent 32 disappears, and the intensity of the absorption spectrum due to the dispersant 33 also decreases. Further, since the metal fine particles 31 are melted (solute is precipitated) and starts growing, the absorption spectrum by plasmon absorption indicated by an arrow in FIG. 4B becomes broader as the intensity decreases.

  Late firing stage: In this late firing stage, the growth of the metal fine particles 31 is further promoted, and the absorption spectrum due to the plasmon absorption indicated by the arrow in FIG. 4C starts to disappear. This latter firing stage is a process in which the firing laser beam 50 is most difficult to be absorbed.

Next, the operation of the laser film forming apparatus 20 configured as described above will be described.
As shown in FIG. 1, a droplet 30 is ejected from a droplet ejection head 23 while transporting a carriage 22 in the substrate traveling direction (X arrow direction in FIG. 1) to form a film pattern 40A on the substrate 21 (see FIG. 1). Patterning step). At this time, the laser beam irradiation head 24 is driven to irradiate the predetermined irradiation region A on the film pattern 40A with the firing laser beam 50 (electromagnetic wave irradiation step).

  Further, at this time, the reflection absorption measuring device 25 is driven to emit the detection electromagnetic wave W1 from the detection electromagnetic wave emission means 25A toward the irradiation region A. As described above, the detection electromagnetic wave W1 is an electromagnetic wave having the same wavelength as the wavelength Lp at which plasmon absorption of the film pattern 40A occurs (detection step).

  In the irradiation area A of the film pattern 40A, the firing laser light 50 is absorbed, and the firing is started by photothermal conversion. In the initial stage of firing, plasmon absorption occurs, so that the reflected wave W2 is not detected by the reflected wave detecting means 25B. Therefore, the first detection signal S1 is output from the reflected wave detection means 25B. That is, in this case, it can be seen that the irradiation area A of the film pattern 40A is not fired.

  Then, the control unit 26 outputs a control signal to stop the movement of the carriage 22 and to continuously output the firing laser beam 50 from the laser beam irradiation head 24. Accordingly, the irradiation region A is continuously irradiated with the firing laser beam 50 (control process). After that, it undergoes photothermal conversion and transitions from the early stage of firing to the middle stage of firing. In the middle stage of firing, plasmon absorption having a lower intensity than that in the early stage of firing occurs, so that the reflected wave detection means 25B detects a minute reflected wave W2. Since the reflected wave W2 at this time is 20% or less of the output of the detection electromagnetic wave W1 emitted from the detection electromagnetic wave emission means 25A, the reflected wave detection means 25B continues to output the first detection signal S1. Keep doing. That is, also in this case, the irradiation area A of the film pattern 40A is not fired.

  Thereafter, the laser beam 50 for firing is continuously irradiated, and when transition is made from the middle stage of firing to the latter stage of firing, plasmon absorption starts to disappear. When the reflected wave W2 becomes larger than 20% of the output of the detection electromagnetic wave W1 when it is emitted from the laser light irradiation head 24, the reflected wave detection means 25B outputs the second detection signal S2 to the control unit 26. To do. That is, in this case, the irradiation area A of the film pattern 40A is considered to have been sufficiently baked.

  Then, the control unit 26 outputs a control signal for moving the carriage 22 so that the laser light irradiation head 24 is disposed at a position facing the next new irradiation area A. Then, the firing laser beam 50 starts to irradiate the next new irradiation region A with the firing laser beam 50. Thereafter, by performing the same as described above, the firing laser beam 50 is sufficiently irradiated to the entire film pattern 40A. As a result, there is formed a wiring pattern 40B that is surely fired without any unfired portions.

In the following, when the wiring pattern 40B having the same shape as described above is formed, the time during which the first detection signal S1 and the second detection signal S2 are output in each irradiation region A is stored, and based on this. The control unit 26 controls each of the carriage 22, the droplet discharge head 23, and the laser beam irradiation head 24. By doing so, it is possible to form the wiring pattern 40B that has been reliably baked without using the reflection / absorption measuring device 25 when the wiring pattern 40B is formed next time.

As described above, according to this embodiment, the following effects can be obtained.
(1) According to the present embodiment, the irradiation region A of the film pattern 40A irradiated with the firing laser light 50 has a wavelength different from that of the firing laser light 50 and is absorbed by the film pattern 40A. Meanwhile, a detection electromagnetic wave W1 having a wavelength that is not absorbed by the wiring pattern 40B is emitted, and the reflected wave W2 is detected. The firing region A is continuously irradiated with the firing laser beam 50 until a reflected wave W2 having an intensity greater than 20% of the intensity of the detection electromagnetic wave W1 is detected. Accordingly, since the entire film pattern 40A can be surely fired, a wiring pattern 40B having desired electrical characteristics can be formed.
(2) Moreover, according to the present embodiment, an electromagnetic wave having a wavelength different from that of the firing laser light 50 is used as the detection electromagnetic wave W1. Therefore, by detecting the intensity of the electromagnetic wave having the same wavelength as the wavelength of the detection electromagnetic wave W1, it can be determined whether or not the film pattern 40A has been sufficiently baked.
(3) According to this embodiment, an electromagnetic wave having a wavelength that causes plasmon absorption is used as the detection electromagnetic wave W1. This plasmon absorption appears in the early and middle firing stages of the film pattern 40A, and does not appear in the last firing stage. Therefore, by detecting the intensity of the electromagnetic wave W1 for detection, the film pattern 40A is surely changed to the wiring pattern 40B. I know if it's not.
(4) Moreover, according to this embodiment, since the desired film pattern 40A was formed using the inkjet method, the fine wiring pattern 40B can be formed.
(5) In the present embodiment, the reflection / absorption measuring device 25 is provided around the laser light irradiation head 24 and is configured to follow the laser light irradiation head 24. Therefore, by irradiating the detection electromagnetic wave W1 while irradiating the firing laser light 50, it can be seen on the spot whether or not the film pattern 40A has become the wiring pattern 40B. As a result, the entire film pattern 40A can be reliably baked.
(6) In the present embodiment, the time during which the first detection signal S1 and the second detection signal S2 in each irradiation region A are output is stored in the control unit 26. Therefore, if the wiring pattern 40B is formed once using the reflection / absorption measuring apparatus 25, the film pattern can be reliably formed without using the reflection / absorption measuring apparatus 25 when the wiring pattern 40B having the same shape is formed. 40A can be fired.
( First Reference Embodiment )
A laser deposition method and a laser deposition apparatus according to the first reference embodiment will be described with reference to FIG.

The laser film forming apparatus 20A according to the first reference embodiment uses the fact that the firing laser light 50 is irregularly reflected in the irradiation area A of the film pattern 40A to increase the degree of absorption of the firing laser light 50 by the film pattern 40A. It is intended to be detected. Accordingly, since the configuration of the reflection / absorption measurement apparatus 25 is the same except for the configuration, detailed description of members other than the reflection / absorption measurement apparatus 25 is omitted.

FIG. 5 is an overall configuration diagram of a laser film forming apparatus 20A according to the present embodiment.
As shown in FIG. 5, the reflection absorption measuring device 55 of the laser film forming apparatus 20A includes only the reflected wave detection means 25B. Further, unlike the first embodiment, the laser main body 51 of the present embodiment emits an electromagnetic wave having a wavelength at which plasmon absorption occurs instead of the second harmonic (wavelength λ = 532 nm) of the Nd: YAG laser. It has become.

Next, the operation of the laser film forming apparatus 20A will be described.
First, in the same manner as in the first embodiment, the droplet 30 is ejected from the droplet ejection head 23 while the carriage 22 is conveyed in the substrate traveling direction (X arrow direction in FIG. 1), and the film pattern is formed on the substrate 21. 40A is formed (patterning step). At this time, the laser beam irradiation head 24 is driven to irradiate the film pattern 40A with the firing laser beam 50 (electromagnetic wave irradiation step).

  Then, the firing laser beam 50 is absorbed in the irradiation area A of the film pattern 40A, and the firing is started by photothermal conversion. In the initial stage of firing, as described above, plasmon absorption occurs, and therefore the reflected wave W2 is not detected by the reflected wave detection means 25B. That is, in this case, it can be seen that the irradiation area A of the film pattern 40A is not fired. Therefore, the first detection signal S1 is output from the reflected wave detection means 25B.

  As a result, the control unit 26 stops the movement of the carriage 22, and the laser beam irradiation head 24 outputs a control signal indicating that the firing laser beam 50 is continuously output. The irradiation area A is continuously irradiated (control process). After that, it undergoes photothermal conversion and transitions from the early stage of firing to the middle stage of firing. In this middle stage of firing, plasmon absorption having a lower intensity than that in the early stage of firing occurs, so that a part of the firing laser light 50 is irregularly reflected in the irradiation region A. The irregularly reflected minute reflected wave W2 is detected by the reflected wave detecting means 25B.

  At this time, since the intensity of the detected reflected wave W2 is sufficiently small, the reflected wave detecting means 25B continues to output the first detection signal S1. That is, it can be seen that the irradiation area A of the film pattern 40A is not fired.

  Thereafter, when transition is made from the middle stage of firing to the latter stage of firing, plasmon absorption starts to disappear. As a result, most of the firing laser light 50 is irregularly reflected in the irradiation region A. Then, the irregularly reflected wave W2 is detected by the reflected wave detecting means 25B. At this time, if the detected reflected wave W2 becomes larger than a specified value with respect to the output of the detection electromagnetic wave W1 emitted from the laser main body 51, a second detection signal S2 indicating that is output to the control unit 26. . That is, in this case, the irradiation area A of the film pattern 40A is considered to have been sufficiently baked.

  Then, the control unit 26 outputs a control signal for moving the carriage 22 so that the laser light irradiation head 24 is disposed at a position facing the next irradiation region A. Then, the firing laser beam 50 starts irradiating the firing laser beam 50 to the next new irradiation region. Thereafter, in the same manner as described above, the entire film pattern 40A is irradiated with the laser beam 50 for baking, and baking is performed. As a result, there is formed a wiring pattern 40B that is surely fired without any unfired portions.

As described above, according to the present embodiment, the following effects are obtained.
(1) According to the present embodiment, the laser beam 50 for firing having the same wavelength as the plasmon absorption of the film pattern 40 </ b> A is emitted from the laser beam irradiation head 24. Then, the reflected wave detection means 25B detects the reflected wave W2 irregularly reflected by the film pattern 40A, and until the intensity of the detected reflected wave W2 becomes larger than a specified value with respect to the output of the firing laser light 50, The irradiation region A was irradiated with a firing laser beam 50. Therefore, since there is no need to provide the detection electromagnetic wave emitting means 25A as in the first embodiment, the reflection absorption measuring apparatus can be miniaturized. As a result, the entire laser film forming apparatus 20A can be reduced in size.
( Second Reference Embodiment )
Next, as an example of an electronic apparatus having a wiring pattern formed by the functional film pattern forming apparatus or the functional film pattern forming method described in the first and first reference embodiments , a plasma display is based on FIG. I will explain.

The plasma display 70 shown in FIG. 6 includes a display unit 71, a speaker 72, and a plurality of operation buttons 73. On the element substrate (not shown) of the display unit 71, a plurality of scanning lines, a plurality of data lines, and a plurality of light emitting elements respectively arranged in a matrix corresponding to the intersections of the scanning lines and the data lines. Pixels are formed. Wiring patterns such as scanning lines and data lines are formed by the functional film pattern forming apparatus or the functional film pattern forming method described in the above embodiments.

  Therefore, according to this plasma display 70, by forming a wiring pattern as a functional film pattern by a functional film pattern forming apparatus or a functional film pattern forming method, desired electrical characteristics without an unfired portion can be obtained. The wiring pattern is provided. As a result, it is possible to realize the plasma display 70 in which a decrease in yield due to a wiring pattern failure is suppressed.

In addition, this invention can also be changed and embodied as follows.
In each of the above embodiments, utilizing the fact that plasmon absorption disappears in the later stage of baking of the film pattern 40A, the film pattern 40A is irradiated with electromagnetic waves (laser light) having a wavelength Lp at which plasmon absorption occurs, and the reflected wave W2 is applied. To detect. Then, the firing laser beam 50 is continuously irradiated until a reflected wave W2 larger than 20% is detected in the output when the film pattern 40A is irradiated. The present invention is not limited to this, and an electromagnetic wave having a wavelength other than the electromagnetic wave causing plasmon absorption may be used. For example, since the intensity of the absorption spectrum caused by the dispersant 33 is almost lost from the middle stage to the latter stage of firing, the film pattern 40A is irradiated with an electromagnetic wave having the wavelength of the absorption spectrum caused by the dispersant 33, and the reflected wave W2 By detecting the degree of absorption, it may be determined whether or not the film pattern 40A has been baked. By doing in this way, the effect similar to the above can be acquired.
In the first embodiment, the laser film forming apparatus 20 is used to form the wiring pattern 40B as the functional film pattern. However, the laser film forming apparatus 20 may be used to form other patterns. Good. For example, an insulating film pattern may be formed. In this case, the same effect as the above embodiment can be obtained.
In each of the above embodiments, the laser film forming apparatuses 20 and 20A including the droplet discharge head 23 as a patterning unit for attaching the functional liquid material onto the substrate 21 and the laser light irradiation head 24 have been described as an example. . That is, the apparatus (droplet discharge head 23) for attaching the functional liquid material to the substrate by the ink jet method and the laser film forming apparatuses 20 and 20A including the laser light irradiation head 24 have been described. The present invention is not limited to the laser film forming apparatuses 20 and 20A having such a configuration. The present invention is also applied to an apparatus (patterning means) for depositing a functional liquid material on the substrate 21 by a microdispensing method and a functional film pattern forming apparatus including a laser light irradiation head 24. The present invention is also applied to an apparatus (patterning means) for depositing a functional liquid material on the substrate 21 by a screen printing method and a functional film pattern forming apparatus provided with a laser light irradiation head 24.

  In each of the above embodiments, the laser light irradiation head 24 including the laser main body 51 that emits the firing laser light 50 as the electromagnetic wave is used, but the electromagnetic wave irradiated to the film pattern 40A is not limited to the laser light. The present invention may use light having a single wavelength other than laser light, for example, light having a certain wavelength extracted from light emitted from a white light source by one or a plurality of optical filters.

  In the first embodiment, the configuration using the second harmonic (wavelength: 532 nm) of the Nd: YAG laser as the laser main body 51 has been described as an example. However, the present invention is not limited to the Nd: YAG laser as the laser main body 51. The present invention is widely applicable to configurations using laser light other than the second harmonic (wavelength: 532 nm).

In each of the above embodiments, silver fine particles are used as the metal fine particles 31 as the functional material. However, the metal fine particles 31 may be made of fine particles of gold, copper, aluminum or the like other than silver. .

  In each of the above embodiments, the case where the wiring pattern 40B is formed as an example of the functional film pattern has been described. However, the present invention includes an organic electroluminescence layer of an organic EL element, a color filter, a wiring pattern of an IC tag, and the like. Applicable to form. That is, the present invention is a functional film pattern obtained by firing (drying and sintering) a functional liquid material in which metal fine particles coated with a dispersant are dispersed in a solvent, such as a metal wiring pattern. It can be widely applied to those in which a wiring pattern is made. However, the present invention uses the difference in absorption spectrum (reflection spectrum) of the pattern before film formation and after film formation, so that a functional material is used as a solvent, such as an organic EL layer or a color filter. It can also be used for a functional film pattern that is created by drying the melted functional material with the heat generated by photothermal conversion and evaporating the solvent.

The block diagram which shows the functional film pattern formation apparatus which concerns on 1st Embodiment. Absorption spectrum of droplet (functional material). (A) is an absorption spectrum attributed to the solvent, (B) is an absorption spectrum attributed to the dispersant, and (C) is an absorption spectrum attributed to the fine particles (solute). (A) is an absorption spectrum of an initial firing film pattern, (B) is an absorption spectrum of an intermediate firing film pattern, and (C) is an absorption spectrum of an late firing film pattern. The block diagram which shows the functional film pattern formation apparatus which concerns on 1st reference embodiment . The perspective view which shows the plasma display as an electronic device which concerns on 2nd reference embodiment .

Explanation of symbols

  W2 ... Reflected wave, 20, 20A ... Laser film forming apparatus as functional film pattern forming apparatus, 21 ... Substrate, 23 ... Droplet ejection head as patterning means, 24 ... Laser light irradiation head as electromagnetic wave irradiation means, 25 ... reflection absorption measuring device as detection means, 25A ... detection electromagnetic wave emission means, 25B ... reflection wave detection means, 26 ... control section as control means, 40A ... wiring pattern as functional film pattern, 50 ... as electromagnetic waves Laser beam for firing, 70... Plasma display as electronic equipment.

Claims (4)

Patterning means for forming a film pattern by attaching a functional liquid material to the substrate;
An electromagnetic wave irradiation means for irradiating the film pattern formed on the substrate with an electromagnetic wave to form a functional film pattern;
Detecting means for detecting the degree of absorption of the electromagnetic wave of the film pattern attached to the substrate;
Based on information on the degree of absorption of the electromagnetic wave, and a control means for controlling the irradiation amount of the electromagnetic wave from the electromagnetic wave irradiation means ,
The detection means includes a detection electromagnetic wave emission means for emitting a detection electromagnetic wave;
A reflected wave detection means for detecting a reflected wave of the detection electromagnetic wave reflected by the film pattern,
The functional film pattern forming apparatus, wherein the electromagnetic wave for detection is an electromagnetic wave that is absorbed by the film pattern and is not absorbed by the functional film pattern. The functional film pattern forming apparatus according to claim 1,
The functional film pattern forming apparatus, wherein the detection means is provided around the electromagnetic wave irradiation means and moves in synchronization with the electromagnetic wave irradiation means. In the functional film pattern forming apparatus according to claim 1 or 2,
The functional film pattern forming apparatus, wherein the electromagnetic wave emitted from the electromagnetic wave irradiation means is laser light. In the functional film pattern forming apparatus according to any one of claims 1 to 3,
The functional film pattern forming apparatus, wherein the patterning means is an apparatus for forming the film pattern by a liquid process method.

Images