JP4674477B2 - Semiconductor module - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To materialize a high speed high capacity semiconductor module, while keeping the entire shape small. <P>SOLUTION: A plurality of semiconductor devices 209, equipped with a semiconductor chip 211 and a protruded electrode 212, are packaged on a packaging substrate 210, such that an angle has an inclination &theta; between a direction perpendicular to one side where the connection 215 of the semiconductor chip 211 is existent and the packaging substrate 210. Consequently, required packaging substrates 210 are reduced to decrease the height of the module, since this can provide a semiconductor module that has realized high speed and high capacity. <P>COPYRIGHT: (C)2006,JPO&amp;NCIPI

Description

  The present invention relates to a semiconductor device and a semiconductor module, and more particularly to a semiconductor device and a semiconductor module suitable for use as a high-speed compatible memory and a high-speed compatible memory module.

  As a conventional semiconductor module, there is one in which a plurality of semiconductor chips are stacked on a substrate in order to increase the capacity of a memory (see, for example, Patent Document 1). FIG. 11 shows a conventional embodiment described in Japanese Patent Laid-Open No. 2002-9227.

  In the embodiment of FIG. 11, a semiconductor chip 211 mounted on at least one surface of an interposer substrate (intermediate mounting substrate) 510 is stacked on each other via a spacer substrate 512. However, the embodiment of FIG. 11 has a problem that the density of the semiconductor module is hindered due to the presence of the intermediate mounting substrate.

  In order to increase the mounting density, it is necessary to reduce the number of mounting substrates on which semiconductor devices are mounted and increase the number of semiconductor chips 211 mounted on the mounting substrate. As a method of reducing the number of mounting boards and increasing the number of semiconductor chips 211 mounted on the mounting board, there is a method of mounting a semiconductor device upright or obliquely with respect to the mounting board (for example, see Patent Document 2). ). FIG. 12 shows a conventional embodiment described in JP-A-10-335374.

In FIG. 12, the external connection terminal 104 is provided at the connection portion of the circuit formation surface of the semiconductor chip 211. The external connection terminal is provided with a bent portion 105, and can be installed upright or obliquely by soldering the bent portion so as to be suspended.
JP 2002-9227 A Japanese Patent Laid-Open No. 10-335374

  However, in the conventional configuration, the height of the semiconductor module is determined by the sum of the height of the semiconductor chip, the thickness of the mounting substrate, and the height of the external connection terminals. Therefore, the presence of the external connection terminals necessitates a space for connection between the semiconductor chip and the mounting substrate, which hinders a reduction in the height of the semiconductor module.

  SUMMARY OF THE INVENTION The present invention solves the above-described conventional problems, and an object thereof is to provide a high-capacity and small-sized semiconductor module that is reduced in height while increasing the mounting density of semiconductor devices.

In order to solve the above-described object, a semiconductor device including a semiconductor chip having a circuit formation surface and a plurality of protruding electrodes provided on the semiconductor chip is formed on a substrate having a plurality of electrode portions. A semiconductor module in which the plurality of protruding electrodes and the plurality of electrode portions are electrically connected to each other so as to be opposed to each other , wherein a plurality of the semiconductor devices are arranged side by side, and the adjacent semiconductor devices are A semiconductor module is used, wherein the semiconductor module is arranged so as to be shifted from one-fourth to three-fourths of the interval between the plurality of protruding electrodes in the protruding electrode arrangement direction.

  As described above, in the semiconductor module of the present invention, the angle formed by the mounting substrate and the direction perpendicular to one side where the connecting portion exists on the circuit formation surface of the semiconductor chip is mounted on the mounting substrate so that the angle formed by the mounting substrate has an inclination θ. It is electrically connected to the electrode part on the substrate. As a result, it is possible to reduce the height and density of the semiconductor module in the mounted state.

  The present invention will be described below with reference to the illustrated embodiments.

(Embodiment 1)
FIGS. 1A and 1B are a cross-sectional view and a perspective view showing a semiconductor module in which a plurality of semiconductor devices 209 according to the first embodiment of the present invention are mounted on a mounting substrate 210. FIGS. FIG. 3B is a cross-sectional view and a perspective view of the semiconductor device 209. FIGS. 3A, 3B, 4A, and 4B are views of a plurality of mounted semiconductor devices 209 in FIG. FIG. 6 is a cross-sectional view and a perspective view showing a state where one semiconductor device 209 is mounted on the mounting substrate 210, and FIG. 6 is a perspective view showing another example of the first embodiment.

  A semiconductor device 209 shown in FIG. 2A is roughly composed of a semiconductor chip 211, a protruding electrode 212, and a protective member 213. The semiconductor chip 211 functions as a high-speed memory, and the memory capacity thereof is a high-capacity memory chip that can realize, for example, 128 Mb or more with one chip. One side of the semiconductor chip 211 is a circuit formation surface on which a memory circuit is formed, and a plurality of connection portions 215 are arranged in parallel on one side (the lower side in the figure) of the circuit formation surface. Yes. The connection part 215 is an electrode pad, and a protruding electrode 212 is formed on each of the connection parts 215.

  The protruding electrode 212 has an electrode portion 214 on the substrate such that the angle formed by the mounting substrate 210 and the direction perpendicular to one side where the connection portion 215 of the semiconductor chip 211 exists on the circuit formation surface of the semiconductor chip 211 has an inclination θ. And are electrically connected. As a result, it is possible to reduce the height and density of the semiconductor module in the mounted state. Furthermore, since the protruding electrode 212 and the electrode portion 214 are electrically connected without using an external connection terminal, loss due to the power transmission path is reduced. Further, the distance between the electrode portions 214 is shorter than that of the stacked semiconductor module shown in FIG. Therefore, the processing speed can be increased. In the present invention, the inclination θ is effective at an acute angle in order to realize a low profile, a high density, and a high processing speed. That is, when the inclination θ is other than an acute angle, it is difficult to directly electrically connect the protruding electrode 212 and the electrode portion 214. Furthermore, it is desirable to set the inclination θ to 2 ° to 10 ° from the relationship between the restrictions on the external package including the semiconductor module and the mounting density. The protruding electrode 212 can be manufactured by wire bonding, plating, or the like.

  The protection member 213 is disposed on the circuit formation surface of the semiconductor chip 211 configured as described above. The protective member 213 is formed by applying a liquid coating material having an insulating property such as polyimide resin, epoxy resin, or silicone resin by using, for example, spin coating, potting, screen printing, or transfer molding. It is possible. In addition, an insulating sheet or a tape can be used instead of the liquid coating material. The liquid coating, sheet, or tape is not necessary on the entire surface, and may be partially present. If it is formed only in the center, the material cost can be reduced. On the other hand, when the semiconductor chip 211 is provided at a corner portion, corner breakage or the like can be prevented.

  The protective member 213 in the present embodiment is not disposed at the portion where the connection portion 215 is formed, and therefore the connection portion 215 is formed at the exposed portion 216 where the semiconductor chip 211 is exposed. . However, the protection member 213 is configured to reliably cover and protect at least a portion of the circuit formation surface where the circuit is formed. Thereby, since the circuit formation region which is the most sensitive part in the semiconductor chip 211 is protected by the protection member 213, the reliability of the semiconductor device 209 can be improved.

  Subsequently, a mounting form of the semiconductor device 209 having the above-described configuration will be described. FIG. 3A shows the mounting substrate 210 at a position where the semiconductor device 209 is mounted on the mounting substrate 210 and a direction perpendicular to one side where the connection portion 215 of the semiconductor chip 211 exists on the circuit formation surface of the semiconductor chip 211. A mounting form is shown in which the corners are mounted with an inclination θ and sealed with a sealing resin 217 so as to cover the connection portion 215 of the semiconductor chip 211, the protruding electrode 212, and the connection portion 215 of the mounting substrate 210. As this connection method, for example, a pressing method using an anisotropic conductive film or a conductive adhesive or a thermocompression bonding method can be applied.

  The mounting substrate 210 is provided with electrode portions 214 that are electrically connected to the protruding electrodes 212 provided in the semiconductor device 209. Furthermore, wiring is made from each electrode part 214 to the mounting substrate 210. In this mounting form, any board can be selected. Specifically, various substrates such as a printed wiring board, a flexible circuit board, a ceramic circuit board, and a Tab tape can be used as the mounting board 210, and a single-layer wiring board can be used as the board structure. A multilayer wiring board can also be used.

  As the sealing resin 217, for example, a liquid sealing material having insulation properties such as an epoxy resin can be applied. As a method for supplying the sealing resin 217, for example, injection can be used. By sealing with the sealing resin 217 so as to cover the connection portion 215 of the semiconductor chip 211, the protruding electrode 212, and the exposed portion 216 of the mounting substrate 210, the circuit formation surface of the semiconductor chip 211 is entirely covered, The reliability of the semiconductor device 209 can be further improved. In addition, the connection portion 215 between the semiconductor chip 211 and the mounting substrate 210 is mechanically connected, so that stress applied to the protruding electrode 212 is dispersed and mechanical strength can be increased as compared with the case where the sealing resin 217 is not provided. .

  Next, another embodiment of the semiconductor device 209 will be described. FIG. 4A shows a mounting in which a semiconductor support member 321 that supports the semiconductor device 209 is disposed between the semiconductor device 209 and the mounting substrate 210 by a force applied to the semiconductor device 209 or the mounting substrate 210. The form is shown. The semiconductor support member 321 may be configured to use, for example, a resin having thermoplasticity and functioning as an adhesive. The semiconductor support member 321 is formed of an insulating material, and the semiconductor support member 321 is formed of an adhesive with the semiconductor device 209 and the mounting substrate. It may be configured to adhere to 210.

  According to such a configuration, compared to the embodiment shown in FIG. 3A, the stress applied to the protruding electrode 212 is further dispersed when the semiconductor device 209 is mounted or when the semiconductor module is used in an actual environment, and the mechanical strength is increased. It becomes possible to improve. Note that the shape of the semiconductor support member 321 can be further increased in mechanical strength if the shape is as shown in FIG. 5 due to stress. In FIG. 5, since the shape of the semiconductor support member 321 has a bow and arrow shape or a concave outer shape, it is effective for stress relaxation. Comparing FIG. 4A and FIG. 5, when pressure is applied to the semiconductor device 209, in the case of FIG. 4A, force is directly applied to the bumps 212 and connection stability is impaired. On the other hand, in the case of FIG. 5, the force is relaxed and the connection stability is good.

  In the embodiment shown in FIG. 1A, at least two semiconductor devices 209 shown in FIG. 2A are arranged in parallel on the mounting substrate 210 and mounted by the method described above. First, as in the mounting form shown in FIG. 4A, the semiconductor support member 321 is disposed, and the semiconductor device 209 is mounted. Subsequently, the semiconductor device 209 is mounted as in the mounting form shown in FIG. This mounting mode is realized by repeating the mounting mode shown in FIG. 3A a predetermined number of times. In this way, by adopting a configuration in which a plurality of semiconductor devices 209 are inclined and mounted, the separation distance between the electrode portions 214 on each substrate is shortened, so that the processing speed is increased and the overall shape is reduced. Can be maintained. Therefore, a high-capacity and high-speed semiconductor module can be realized.

  Further, before the mounting of each semiconductor device 209, an adhesive is applied to the non-circuit forming surface of the semiconductor chip 211 already mounted on the mounting substrate 210, or the surface of the protective member of the semiconductor device 209 to be mounted, or After the semiconductor device 209 is mounted, mechanical strength can be increased by injecting an adhesive and fixing each semiconductor device 209. Further, by using a material having adhesiveness as the material of the protective member 213, the mounting density of the semiconductor device 209 is improved as compared with the configuration in which the adhesive is used, and the number of components is reduced and the assembly work is simplified. Can be achieved. Further, the sealing resin 217 can be injected at a time after all the semiconductor devices 209 are mounted, thereby simplifying the assembly work and reducing the time for manufacturing the semiconductor module.

  In the present embodiment, the protruding electrode 212 is formed on the connection portion 215 of the semiconductor chip 211 and mounted on the mounting substrate 210 by a pressure welding method or a thermocompression bonding method. However, the solder material is connected to the connection portion of the semiconductor chip 211. For example, it is possible to mount solder by supplying solder to the electrode part 214 of the mounting substrate 210 by printing or coating, applying a thermal process, and soldering.

  In the present embodiment, one end face (semiconductor chip end face 208) orthogonal to one side where the protruding electrodes 212 of the semiconductor device 209 are arranged is arranged on the same plane. As in the embodiment shown in FIG. 6, the semiconductor chip end face 208 may not be on the same plane. In FIG. 6, the semiconductor devices 209 are arranged in parallel so as to be about half the width of the mounting substrate 210. Since the small semiconductor device 209 is disposed with respect to the mounting substrate 210, the semiconductor device 209 can be disposed on the mounting substrate 210 without a free space. Note that the size may not be half but small. If it is 1 / integer of the width | variety of the mounting substrate 210, it can arrange | position efficiently.

(Embodiment 2)
FIG. 7 is a cross-sectional view showing a semiconductor module in which a plurality of semiconductor devices 209 according to Embodiment 2 of the present invention are mounted on a mounting substrate 210. 7, the same components as those in FIGS. 1 to 4 are denoted by the same reference numerals, and the description thereof is omitted.

  The embodiment of FIG. 7 shows a configuration in which at least two semiconductor devices 209 are disposed on both surfaces of the mounting substrate 210 on each surface of the mounting substrate 210. First, at least two semiconductor devices 209 are mounted on one surface of the mounting substrate 210 by the mounting form shown in FIG. Subsequently, at least two semiconductor devices 209 are similarly mounted on the other surface of the mounting substrate 210, thereby realizing this mounting form.

  According to such a configuration, the height of one mounting substrate can be reduced compared to the configuration in which the semiconductor devices 209 according to the mounting form of FIG. 11 are stacked, and the mounting circuit between the stacked semiconductor devices is electrically connected. This eliminates the need for parts and processes.

  7, the semiconductor device 209 on the mounting substrate 210 and the semiconductor device 209 below the mounting substrate 210 are shown to be parallel to each other, but the inclination θ between the semiconductor device 209 and the mounting substrate 210 is illustrated. However, different configurations may be selected on the upper and lower sides. As a result, it is possible to adjust the mounting density on both sides of the substrate, and it is possible to cope with the case where the constraints of the external package 411 are different on both sides of the substrate.

  8A and 8B, it is further preferable that the semiconductor device 209 is tilted in the opposite direction to the external terminal 410 as shown in FIG. 8B. In other words, the distance aa ′ between the electrode part 214 and the external terminal 410 is shorter than the inclination in the same direction as that of the external terminal 410 due to the restriction of the external package 411. Therefore, further increase in processing speed is desired.

(Embodiment 3)
FIG. 9 is a perspective view showing a semiconductor module in which a plurality of semiconductor devices 209 according to the third embodiment of the present invention are mounted on a mounting board 210. 9, the same components as those in FIGS. 1 to 4 are denoted by the same reference numerals, and the description thereof is omitted.

  In the embodiment of FIG. 9, the mounting positions of the adjacent semiconductor devices 209 are shifted in the arrangement direction of the bump electrodes 212 from one quarter to three quarters of the gap between the bump electrodes 212. The configuration is shown.

  According to this configuration, the protruding electrode 212 disposed on the semiconductor chip 211 has a circular cross-sectional shape in the plane of the semiconductor chip, so that the mounting positions of the adjacent semiconductor devices 209 are arranged on the protruding electrode 212. In the installation direction, the distance between the electrode portions 214 is smaller than that of the mounting form shown in FIG. Shrinks. Therefore, it is possible to achieve higher density and higher processing speed without being restricted by the size of the protruding electrode 212. If the size of the protruding electrode 212 is reduced, the connection stability is lacking. Further, there is a difference in difficulty in forming the protruding electrode 212 small.

  Note that the standardized memory modules and memory cards are standardized in size, and the above-described structure is particularly effective. In the memory card, in addition to the memory IC, a capacitor, a resistor, a control IC, and an external connection electrode are necessary, and these members may be installed in an empty space having the above structure. For example, the structure shown in FIG. 10 can be mounted with high density. A control IC 603 or a capacitor 601 or a resistor 602 is installed between the semiconductor device 209 mounted obliquely with respect to the surface of the mounting substrate 210, and between the semiconductor device 209 and the mounting substrate 210, and the external terminals 410 are connected to the mounting substrate. When it is provided on the back surface of 210, the structure becomes very compact. When the semiconductor device 209 is obliquely mounted on the external package 411, the angle θ formed therebetween is about 2 degrees or more and 10 degrees or less. Preferably, it is 3 degrees or more and 7 degrees or less. The semiconductor device 209 can be installed in the external package 411 in a compact manner.

  The type of the memory card is not limited to this type, and it can be applied to various types such as those in which the external package 411 is completely molded with resin. In addition, a control IC 603, a capacitor 601, a resistor 602, and the like may be installed on the upper surface of the semiconductor chip 211 using a space between the external package 411. Further, this space may be cut or deleted for design. Or, conversely, the thickness of this portion may be increased so that the contact between the external terminal 410 and the terminal of another device to be supported is stabilized.

  In the semiconductor module according to the present invention, the electrode on the substrate is arranged such that the angle formed by the mounting substrate and the direction perpendicular to one side where the connection portion exists on the circuit formation surface of the semiconductor chip is on the mounting substrate and the mounting substrate has an inclination θ. It is electrically connected to the part. As a result, it is possible to reduce the height and increase the density of the semiconductor module in the mounted state, and it can also be applied to high capacity use such as a memory card in which a space for mounting the semiconductor device is limited.

(A) Cross-sectional view (b) Perspective view showing a configuration in which a plurality of semiconductor devices 209 according to the first embodiment of the present invention are mounted (A) Cross-sectional view (b) Perspective view showing semiconductor device 209 FIG. 1A is a sectional view showing a state in which one semiconductor device 209 is mounted on a mounting substrate 210 among a plurality of mounted semiconductor devices 209 in FIG. FIG. 1A is a sectional view showing a state in which one semiconductor device 209 is mounted on a mounting substrate 210 among a plurality of mounted semiconductor devices 209 in FIG. Sectional drawing of the semiconductor module of another embodiment in FIG. The perspective view which shows the other Example of Embodiment 1 of this invention. Sectional drawing which shows the structure which mounted the some semiconductor device 209 in Embodiment 2 of this invention on both surfaces of the mounting substrate 210 In another example of the second embodiment of the present invention, the semiconductor device 209 is (a) a sectional view inclined so as not to oppose the external terminal 410 (b) a sectional view inclined so as to oppose it. The perspective view which shows the semiconductor module with which the several semiconductor device 209 in Embodiment 3 of this invention was mounted in the mounting board | substrate 210. FIG. Sectional view of the memory module of the present invention Vertical section of a conventional semiconductor module Vertical sectional view of another conventional semiconductor module

Explanation of symbols

209 Semiconductor device 210 Mounting substrate 211 Semiconductor chip 212 Protruding electrode 213 Protective member 214 Electrode portion 215 Connection portion of semiconductor chip 211 216 Exposed portion of mounting substrate 210 217 Sealing resin 321 Semiconductor support member 410 External terminal 411 External package 510 Interposer substrate 512 Spacer substrate 513 Base substrate

Claims (1)

The semiconductor device comprising a plurality of protruding electrodes provided to the semiconductor chip on the semiconductor chip having a circuit forming surface, the circuit forming surface is inclined so as to face the substrate having a plurality of electrode portions, wherein A semiconductor module in which a plurality of protruding electrodes and the plurality of electrode portions are electrically connected ,
A plurality of the semiconductor devices are arranged side by side, and the adjacent semiconductor devices are shifted in a direction in which the plurality of protruding electrodes are arranged from one-fourth to three-fourths of the interval between the plurality of protruding electrodes. A semiconductor module characterized by being disposed.

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