JP4619024B2 - Brittle material cleaving system and method - Google Patents

Description

  The present invention relates to a cleaving system in which a substrate to be processed made of a brittle material (hard and brittle material) is locally heated, and the substrate to be processed is cracked by the thermal stress, and is particularly brittle. The present invention relates to a brittle material cleaving system and method capable of realizing high-quality and high-speed cleaving of a workpiece substrate made of a material.

  Conventionally, as a method of cleaving a work substrate made of a brittle material, (a) a surface of the work substrate is obtained by scratching the surface of the work substrate using a hard material such as diamond. A method of cleaving a substrate to be processed by forming a continuous and fine linear crack or processed groove on the substrate and then applying a pressure or impact load so as to expand the crack or processed groove; (b) Diamond A method is known in which a surface of a substrate to be processed is scribed using a grinding wheel such as a grindstone, and the substrate to be processed is cut along the processing line. Among these, the latter method (b) is generally used for cleaving glass substrates and the like in a manufacturing process for manufacturing a liquid crystal display, a plasma display panel (PDP), a field emission display (FED) and the like. ing.

  However, in the above method (a), irregular fine cracks that cause stress concentration are likely to remain on the cut surface of the substrate to be processed, and finishing processing such as polishing of the end face is necessary after cleaving. There are problems such as becoming.

  Further, the method (b) has a problem in that a machining margin is required to perform the scribing process. In addition, there is a problem that it is difficult to perform a scribing process on a workpiece substrate made of a hard brittle material. Furthermore, there is a problem that irregular surfaces such as burrs are easily generated on the surface of the cut surface of the substrate to be processed, and it is difficult to form a high-quality processed surface.

  Furthermore, when cleaving a glass substrate used for a liquid crystal display, a plasma display panel, a field emission display, etc. using the method (b), (1) a blade for scribing with a grinding wheel (2) It takes time for readjustment when replacing the blade, and wasteful time is required to stop the manufacturing process. (3) It occurs on the surface of the cut surface of the substrate to be processed A cleaning process for removing burrs, dust, etc. and a polishing process for finishing are separately required. (4) Thin glass substrates (for example, 0.1 mm to 0.00 mm) that are becoming common in recent years. There is a problem that it is difficult to cleave the substrate with a thickness of about a certain degree), and there is a possibility that breakage or chipping may occur during the scribing process.

Under such circumstances, as a method of cleaving a glass substrate used for a liquid crystal display, a plasma display panel, a field emission display, etc., (c) a brittle material using a laser beam such as a CO ₂ laser (carbon dioxide laser) There has been proposed a method in which a substrate to be processed is heated locally and cracked by causing cracks in the substrate to be processed by the thermal stress (see Patent Document 1).

  In the method (c), even when the glass substrate is cleaved, (1) there is no problem associated with blade replacement because no grinding wheel is used, and (2) there is no burrs on the surface of the cut surface of the substrate to be processed. Further, there is an advantage that a cleaning process and a polishing process can be omitted because no dust or dust is generated, and (3) there is no possibility of breakage or chipping even when a thin glass substrate is cleaved.

  However, in the method (c) (method of cleaving the substrate to be processed using a laser beam), a laser beam that can be injected without damaging (melting, deformation, alteration, etc.) the substrate to be processed. Due to energy limitations, it has been difficult to achieve high-speed cutting of a workpiece substrate made of a brittle material. Specifically, for example, in the case of a glass substrate having a thickness on the order of 1 mm, the speed is reduced to about several hundred mm / second or less in the case of surface cracking (micro crack method) In the case of the Full Body Crack Method (a method of cleaving with the glass substrate penetrating from the front surface to the back surface), the speed has to be suppressed to about several tens of mm / second or less. Here, when the cleaving process is performed exceeding such a speed, the quality of the cut section of the substrate to be processed cannot be maintained satisfactorily in both cases of surface cleaving and total cleaving. In particular, in the case of full cleaving, if the cleaving speed is sequentially increased, for example, even when all cleaving is possible when the cleaving speed is Va, the cleaving speed is increased to (Va + α). All the cleaving is impossible and the cleaving does not reach the back surface of the substrate to be processed.

In order to solve such problems, conventionally, a mechanical stress is applied to the planned cutting line of the substrate to be processed that is irradiated with the laser beam, and a local thermal stress (tensile force) generated by the laser beam irradiation is applied. (Patent Document 2 and Patent Document 2). 3). Here, as a method of applying mechanical stress along the planned cutting line of the substrate to be processed, as described in Patent Documents 2 and 3, the entire substrate to be processed is evacuated, jigs, etc. A method of bending is known.
Japanese National Patent Publication No. 8-509947 JP 7-323384 A Japanese Patent Laid-Open No. 10-71483

  However, in any of the conventional methods described above, the mechanical cutting process is performed by irradiating the planned cutting line with a laser beam in a state where mechanical stress is applied to the planned cutting line of the substrate. Although the cutting speed of the substrate to be processed is increased by the amount of stress applied, the quality of the substrate to be processed (surface roughness, straightness, There is a problem that the perpendicularity of the cut surface to the glass surface is deteriorated.

  The present invention has been made in consideration of such points, and an object of the present invention is to provide a brittle material cleaving system and method capable of realizing high-quality and high-speed cleaving of a brittle material. And

  As a first solution, the present invention provides a cleaving system in which a substrate to be processed made of a brittle material is locally heated, and the substrate to be processed is cracked by the thermal stress. The substrate to be processed is irradiated with a laser beam to locally heat the substrate to be processed, so that a cleaving unit that causes a crack in the substrate to be processed, and a crack that has occurred in the substrate to be processed by the cleaving unit. A moving unit that moves a region heated locally on the substrate to be processed relative to the substrate to be processed so as to progress along a planned cutting line of the substrate to be processed, and the substrate to be processed A pressurizing mechanism that applies mechanical stress locally to a portion that is separated from the tip of the crack by a predetermined distance so as to spread the crack that propagates above. The region of the substrate to be processed is such that a region where mechanical stress is locally applied on the processed substrate follows the movement of the region heated locally on the substrate to be processed by the cleaving unit. Provided is a cleaving system characterized by being configured to move along a cleaving line.

  In the first solving means described above, the cutting unit further includes a cooling unit that locally cools a region heated locally on the substrate to be processed by the cleaving unit, and the moving unit includes the cleaving unit. The region heated and cooled locally on the substrate to be processed by the unit and the cooling unit is preferably moved relative to the substrate to be processed.

  Further, in the first solving means described above, the pressurizing mechanism is configured such that portions of the substrate to be processed positioned on both sides of the planned cutting line are from the first surface on the side irradiated with the laser beam. A first pressurizing unit that pressurizes the second surface opposite to the first surface, and a portion of the substrate to be processed that is located on the planned cutting line from the second surface toward the first surface. A second pressurizing unit that pressurizes, and at least one of a region pressurized by the first pressurizing unit and a region pressurized by the second pressurizing unit is formed on the substrate to be processed. It is preferable to be configured to move along the planned cutting line.

  Here, at least one of the first pressure unit and the second pressure unit has a roller member that presses the substrate to be processed by pressing the substrate to be processed, and this roller member. However, it is preferable that the region to be pressed on the substrate to be processed moves when the substrate moves along the planned cutting line of the substrate to be processed.

  In addition, at least one of the first pressurizing unit and the second pressurizing unit includes a gas spraying mechanism that pressurizes the substrate to be processed by spraying gas onto the substrate to be processed. The spraying mechanism may be configured to move along the planned cutting line of the substrate to be processed so that a region to be pressed on the substrate to be processed moves.

  Furthermore, at least one of the first pressurizing unit and the second pressurizing unit has a gas suction mechanism that pressurizes the substrate to be processed by sucking a gas around the substrate to be processed. The gas suction mechanism may be configured to move along the planned cutting line of the substrate to be processed so that a region to be pressurized on the substrate to be processed moves.

  Furthermore, at least one of the first pressurizing unit and the second pressurizing unit has a plurality of gas jets arranged along the planned cutting line of the substrate to be processed. The region to be pressurized on the substrate to be processed may be moved by sequentially switching the gas ejection state from each gas ejection port along the planned cutting line of the substrate to be processed.

  Furthermore, at least one of the first pressurizing unit and the second pressurizing unit has a plurality of gas suction ports arranged along the planned cutting line of the substrate to be processed. The region to be pressurized on the substrate to be processed may be moved by sequentially switching the gas suction state by each gas suction port along the planned cutting line of the substrate to be processed.

  As a second solution, the present invention provides a cleaving method in which a substrate to be processed made of a brittle material is locally heated and a crack is generated in the substrate to be processed by the thermal stress. A preparatory process for preparing a substrate to be processed, and heating the substrate to be processed locally while irradiating the substrate with a laser beam to locally heat the substrate to be processed By moving the region along the planned cutting line of the substrate to be processed, it is possible to generate a crack in the substrate to be processed and to expand the crack that propagates on the substrate to be processed, and a cleaving step that causes the crack to propagate. And a pressurizing step of applying mechanical stress locally to a portion separated from the tip of the crack by a predetermined distance, and in the pressurizing step, the mechanically locally on the substrate to be processed Stress A cleaving method for moving a region to be applied along the planned cutting line of the substrate to be processed so as to follow the movement of the region heated locally on the substrate to be processed I will provide a.

  In the second solving means described above, in the cleaving step, it is preferable to cool a locally heated region on the workpiece substrate.

  According to the present invention, a crack is generated in the substrate to be processed by moving the region heated locally on the substrate to be processed by irradiation with the laser beam along the planned cutting line of the substrate to be processed. The mechanical stress is locally applied to a portion separated by a predetermined distance from the tip of the crack so as to spread the crack that propagates on the substrate to be processed in this way. I have to. In addition, at this time, the region where the mechanical stress is locally applied on the substrate to be processed is scheduled to be cleaved so as to follow the movement of the region heated locally on the substrate to be processed. It moves along the line. In this way, a mechanical stress is applied locally so that a crack is generated in the substrate to be processed by laser beam irradiation so that the crack is spread (that is, a gap is provided in the split section). Therefore, the degradation of the quality of the cut surface of the substrate to be processed (surface roughness, straightness, and perpendicularity of the cut surface to the glass surface) caused by mechanical stress applied during the formation of cracks is suppressed. It is possible to effectively reach the cut surface to the back surface of the substrate to be processed. For this reason, it is possible to increase the cleaving speed of the substrate to be processed while maintaining good quality of the substrate to be processed (surface roughness of the cut section, straightness, and perpendicularity of the cut section with respect to the glass surface).

  Further, according to the present invention, since mechanical stress is applied locally so as to expand the crack generated in the processed substrate by the laser beam irradiation, the two glass substrates are processed as the processed substrate. Even in the case where a liquid crystal substrate is used such that is bonded through a sealing material, the glass with the sealing material made of a sticky adhesive member by expanding the crack (that is, by providing a gap in the split section) The substrate portion can be easily separated, and high-quality cleaving can be easily realized.

  Furthermore, according to the present invention, since the cleaving process is performed by irradiating the substrate to be processed with a laser beam, the surface of the cut section of the substrate to be processed does not generate burrs and dust, and the cleaning process and finishing. The polishing process for the purpose can be omitted. Further, even when a thin substrate is cleaved, there is no possibility that damage or chipping will occur.

BEST MODE FOR CARRYING OUT THE INVENTION

  Embodiments of the present invention will be described below with reference to the drawings.

First Embodiment First, an overall configuration of a cleaving system according to a first embodiment of the present invention will be described with reference to FIG.

  As shown in FIG. 1, the cleaving system 1 according to the first embodiment of the present invention locally heats a work substrate 60 made of a brittle material and cracks the work substrate 60 by the thermal stress. The processing unit 5 for performing the cleaving process on the substrate 60 to be processed, and the substrate 60 to be processed with respect to the processing unit unit 5 while supporting the substrate 60 to be processed. And a moving unit 50 for relative movement. Here, a liquid crystal substrate in which two glass substrates (an upper substrate 61 and a lower substrate 62) are bonded via a sealing material (see reference numeral 63 in FIG. 2) is used as a substrate 60 to be cut. And

  Among these, the processing unit 5 includes a heating / cooling unit 10 (preheating unit 20, cleaving unit 30 and cooling unit 40) and a pressurizing unit 45. It is comprised so that it may move relatively along. The heating / cooling unit 10 (the preheating unit 20, the cleaving unit 30, and the cooling unit 40) and the pressurizing unit 45 are aligned in this order from the head side to the tail side with respect to the moving direction on the substrate 60 to be processed. Has been placed.

  Hereinafter, details of the heating / cooling unit 10 (the preheating unit 20, the cleaving unit 30, and the cooling unit 40) and the pressurizing unit 45 included in the processing unit 5 will be described.

The preheating unit 20 of the heating / cooling unit 10 is for irradiating a laser beam LB1 on the workpiece substrate 60 to locally preheat the workpiece substrate 60, and a laser oscillator that emits a CO ₂ laser of about 200 W. 21, a reflection mirror 22 that reflects the laser emitted from the laser oscillator 21, and a polygon mirror 23 that scans the laser reflected by the reflection mirror 22 on the substrate 60 to be processed. As a result, the laser emitted from the laser oscillator 21 is reflected by the polygon mirror 23 through the reflecting mirror 22 and repeatedly scanned over the predetermined length L1 along the planned cutting line 71 on the substrate 60 to be processed. As a result, a linear laser beam LB1 is generated. 2, the linear laser beam LB1 has a linear irradiation pattern 65 extending in a direction along the planned cutting line 71, and has a width W1 (a direction orthogonal to the planned cutting line 71). The length L1 (the length in the direction along the planned cutting line 71) is about a length from several tens mm to the entire length of the substrate 60 to be processed. preferable.

The cleaving unit 30 of the heating / cooling unit 10 is for causing a crack in the workpiece substrate 60 by irradiating the workpiece substrate 60 with the laser beam LB2 to locally heat the workpiece substrate 60. , A laser oscillator 31 that emits a CO ₂ laser of about several tens of W to several tens of W, a reflection mirror 32 that reflects the laser emitted by the laser oscillator 31, and a laser that is reflected by the reflection mirror 32 And a polygon mirror 33 that scans on 60. As a result, the laser emitted from the laser oscillator 31 is reflected by the polygon mirror 33 via the reflecting mirror 32, and repeatedly scanned over the predetermined length L2 along the planned cutting line 71 on the substrate 60 to be processed. As a result, a linear laser beam LB2 is generated. As shown in FIG. 2, the linear laser beam LB2 has a linear irradiation pattern 66 extending in a direction along the planned cutting line 71, and has a width W2 (a direction orthogonal to the planned cutting line 71). It is preferable that a sufficient length of about several millimeters to several tens of millimeters and a length L2 (a length in a direction along the planned cutting line 71) of about several millimeters to a hundred millimeters.

  The cooling unit 40 of the heating / cooling unit 10 is for locally cooling the region heated locally on the substrate to be processed 60 by spraying the coolant C onto the substrate 60 to be processed. Processing coolant C such as mist (mixture of water and gas), gas such as nitrogen, particulate solid such as carbon dioxide particles (dry ice), liquid such as alcohol, mist-like alcohol, snow-like dry ice A cooling nozzle 41 for spraying onto the surface of the substrate 60 is provided. The cooling nozzle 41 preferably has a diameter (inner diameter) of several mm or less.

  The pressurizing unit 45 is for applying mechanical stress locally to the substrate 60 to be processed. The pressurizing unit main body 46, an arm 47 attached to the pressurizing unit main body 46, 2 positioned at an equal distance across a planned cutting line 71, which is rotatably mounted at the tip via a shaft 49 and presses and presses the substrate 60 while being in rolling contact with the surface of the substrate 60. Individual roller members 48. Note that the pressure unit 45 is relatively moved along the planned cutting line 71 on the substrate 60 to be processed, and accordingly, the region pressed by the roller member 48 on the substrate 60 to be processed. Also moves along the planned cutting line 71 of the substrate 60 to be processed. As described above, the roller member 48 moves while rolling and contacting the surface of the substrate 60 to be processed without sliding. Here, the roller member 48 has a diameter of several mm to several tens of mm, and is preferably made of a material such as resin or rubber that does not damage the substrate to be processed 60 such as scratches. The roller member 48 may be made of a single material or a plurality of materials. In particular, the cleaving process according to the present invention uses thermal stress generated by laser beam irradiation, so thermal behavior such as specific heat and thermal conductivity is important. There is a need to. Here, various conditions (such as the pressing force of the roller member 48 and the deflection amount of the processed substrate 60 that is a glass substrate) can be selected as the contact conditions of the roller member 48 to the processed substrate 60. .

  In the above, the heating / cooling unit 10 (the preheating unit 20, the cleaving unit 30, and the cooling unit 40) and the pressure unit 45 included in the processing unit 5 are all along the substrate 60 to be processed by the moving stage (not shown). The heating / cooling unit 10 (the preheating unit 20, the cleaving unit 30, and the cooling unit 40) and the pressure unit 45 are all on the substrate 60 to be processed. The alignment can be adjusted so as to be arranged in a straight line at appropriate intervals along the planned cutting line 71.

  On the other hand, the moving unit 50 moves the substrate 60 to be processed relative to the processing unit 5 including the heating / cooling unit 10 (the preheating unit 20, the cleaving unit 30, and the cooling unit 40) and the pressure unit 45. A substrate holder 51 for supporting the substrate 60 to be processed, positioning pins 52 for positioning the substrate to be processed 60 supported by the substrate holder 51, and the substrate holder 51 with respect to the heating / cooling unit 10 in the XY plane. And a moving stage 53 that is relatively moved.

  A substrate support 54 is provided on the substrate holder 51 to support a portion of the substrate to be processed 60 that is located on the planned cutting line 71. Here, as shown in FIGS. 3A and 3B, the substrate support 54 has a triangular cross-sectional shape. Further, the substrate support 54 is made of a substrate 60 to be processed such as fluorine resin such as Teflon (registered trademark), polyallyl ether ether ketone resin such as PEEK (registered trademark), acrylic, polyimide resin, or soft glass. It is preferably made of a member made of a material having a hardness that does not damage the surface. 3 (a) and 3 (b), only one substrate support 54 as shown is provided as a substrate support for supporting a portion of the substrate 60 to be processed located on the planned cutting line 71. However, the present invention is not limited to this, and a plurality of substrate supports may be provided in parallel with the substrate support 54 as shown in the figure to support the entire surface of the substrate to be processed 60.

  In the above, a pressurizing mechanism is constituted by the pressurizing unit 45 (first pressurizing unit) and the substrate support 54 (second pressurizing unit) described above.

  More specifically, as shown in FIGS. 3A and 3B, the two roller members 48 of the pressure unit 45 are disposed above the substrate to be processed 60, and the planned cutting line of the substrate to be processed 60 is shown. The part located on both sides of 71 is pressurized from the surface (first surface) on the side irradiated with laser beams LB1 and LB2 toward the back surface (second surface) opposite to the surface. On the other hand, the substrate support 54 is disposed below the substrate 60 to be processed, and a portion of the substrate 60 that is located on the planned cutting line 71 is directed from the back surface (second surface) to the surface (first surface). Pressurize. The substrate support 54 extends over the entire length along the planned cutting line 71 of the substrate 60 to be processed, and the roller member 48 moves along the entire length of the substrate support 54 thus extended. It is like that. In this case, mechanical stress (see reference numeral 69) is applied to the crack 68 formed by the heating / cooling unit 10 that moves in advance of the pressurizing unit 45, and the crack 68 enters deeper, so that the workpiece is processed. The substrate 60 is easily separated at the fractured surface.

  3 (a) and 3 (b), the substrate support 54 has a triangular cross-sectional shape. However, the present invention is not limited to this, and there are various types as shown in FIGS. 4 (a) to 4 (f). Substrate supports 54A to 54F having a cross-sectional shape (polygon, trapezoid, bowl, semicircle, circle, ellipse, etc.) may be used. The cross-sectional shapes of the substrate supports 54, 54A to 54F may be uniform in the length direction, and the size, shape, and the like in the length direction may be changed depending on the location. Thereby, according to the place on the to-be-processed substrate 60, the mechanical stress applied locally on the to-be-processed substrate 60 by the roller member 48 and the substrate supports 54 and 54A to 54F can be controlled.

  On the other hand, in FIGS. 3A and 3B, a cylindrical member is used as the roller member 48 of the pressure unit 45. However, the present invention is not limited to this, and as shown in FIGS. Various roller shapes 48A to 48F having various shapes (elliptical sphere, sphere, truncated frustoconical, abacus bead, hourglass, etc.) may be used. 5A to 5D, the substrate 60 is pressed by two roller members 48A to 48D separated from each other. In FIGS. 5E and 5F, A configuration is adopted in which the workpiece substrate 60 is pressed by integral roller members 48E and 48F.

  Next, the operation of the first embodiment of the present invention having such a configuration will be described.

  In the cleaving system 1 shown in FIG. 1, the substrate 60 to be cleaved is positioned on the substrate holder 51 mounted on the moving stage 53 of the moving unit 50. Specifically, an alignment mark (not shown) attached to the substrate 60 to be processed is imaged by a CCD force mela (not shown), and the substrate to be processed is based on an imaging result by an image processing device (not shown). The relative positional relationship between the two alignment marks is changed so that the 60 alignment marks are located at predetermined positions on the substrate holder 51. As a result, the substrate 60 to be processed is positioned at a predetermined location on the substrate holder 51. The substrate 60 to be processed positioned on the substrate holder 51 in this way is fixed by positioning pins 52.

  Then, the substrate holder 51 is moved by the moving stage 53 of the moving unit 50, and the processing unit 5 is positioned on the planned cutting line 71 of the substrate 60 to be processed positioned on the substrate holder 51. Note that the heating / cooling unit 10 (the preheating unit 20, the cleaving unit 30 and the cooling unit 40) and the pressure unit 45 included in the processing unit 5 are positioned on the cleaving line 71 of the substrate 60 to be processed. The alignment is adjusted in advance so as to be arranged in a straight line at appropriate intervals along the planned cutting line 71.

  In this state, the substrate 60 positioned on the substrate holder 51 is moved relative to the processing unit 5 by the moving stage 53 of the moving unit 50, and the heating / cooling unit 10 included in the processing unit 5 is included. (Preheating unit 20, cleaving unit 30 and cooling unit 40) and pressure unit 45 are relatively moved in this order along cleaving line 71 on substrate 60 to be processed.

  As a result, as shown in FIGS. 1 and 2, first, the preheating unit 20 of the heating / cooling unit 10 relatively moves along the planned cutting line 71 on the substrate 60 to be processed, and the line on the substrate 60 is processed. By irradiating the shaped laser beam LB1, the workpiece substrate 60 is locally preheated at a predetermined temperature (about 30 ° C. to 200 ° C.). At this time, in the preheating unit 20, the laser emitted from the laser oscillator 21 is reflected by the polygon mirror 23 through the reflecting mirror 22 and has a predetermined length L1 along the planned cutting line 71 on the substrate 60 to be processed. By being repeatedly scanned over, a linear laser beam LB1 having an irradiation pattern 65 is generated.

  Then, the cleaving unit 30 relatively moves along the planned cutting line 71 on the substrate 60 to be locally preheated by the preheating unit 20 in this way, and locally on the substrate 60 to be processed by the preheating unit 20. By irradiating a linear laser beam LB2 to a linear region that is narrower than the region that has been preheated locally, the substrate 60 to be processed is locally at a predetermined temperature (about 100 ° C. to 400 ° C.). Heat. At this time, in the cleaving unit 30, the laser emitted from the laser oscillator 31 is reflected by the polygon mirror 33 through the reflecting mirror 32, and has a predetermined length L2 along the planned cutting line 71 on the substrate 60 to be processed. By being repeatedly scanned over, a linear laser beam LB2 having an irradiation pattern 66 is generated.

  Thereafter, the cooling unit 40 moves relatively along the planned cutting line 71 on the substrate 60 to be heated locally by the cleaving unit 30 in this manner, and the crushing unit 30 locally moves on the substrate 60 to be processed. The substrate 60 to be processed is locally cooled by spraying the coolant C onto a circular area that is wider than the area that has been heated. At this time, in the cooling unit 40, the coolant C sprayed from the cooling nozzle 41 is sprayed on the surface of the substrate 60 to be processed with a predetermined spray pattern 67.

  Further, the pressure unit 45 relatively moves along the planned cutting line 71 on the substrate 60 to be locally cooled in this manner by the cooling unit 40, and the surface of the substrate 60 is moved by the roller member 48. By pressing while rolling, mechanical stress is locally applied to the substrate to be processed 60 in cooperation with the substrate support 54 that supports the back surface of the substrate 70 to be processed. More specifically, the pressurizing unit 45 pressurizes portions of the substrate to be processed 60 that are located on both sides of the planned cutting line 71 from the surface side of the substrate to be processed 60. Of these, the portion located on the planned cutting line 71 is pressurized from the back side of the substrate 60 to be processed.

  As described above, when the processing by the heating / cooling unit 10 (preheating by the preheating unit 20, heating by the cleaving unit 30, and cooling by the cooling unit 40) is sequentially performed on the substrate 60 along the planned cutting line 71, Cracks 68 are formed mainly by the thermal stress (tensile stress) generated by heating the substrate 60 to be processed and the tensile stress generated by cooling the substrate 60 to be processed, and the heating / cooling unit 10 (preheating unit 20, cleaving unit 30). As the cooling unit 40) relatively moves along the planned cutting line 71 on the substrate 70, the crack 68 develops along the planned cutting line 71.

  Specifically, when the workpiece substrate 60 is locally heated by the cleaving unit 30, a crack 68 is generated in the workpiece substrate 60 due to thermal stress (tensile stress) generated by heating the workpiece substrate 60. Then, in this state, when a region (corresponding to the irradiation pattern 66) in which heating is locally performed on the workpiece substrate 60 is moved along the planned cutting line 71, the thermal stress generated by the heating by the cutting unit 30 is generated. It is sequentially applied to the tip of the crack 68 of the substrate 60 to be processed, and follows the movement of the region 66 by the stress expansion effect (“specific effect around the crack tip” in fracture engineering) at the tip of the crack 68. Cracks 68 develop in shape.

  At this time, after the substrate 60 is locally heated by the cleaving unit 30, the region (irradiation pattern 66) that is locally heated on the substrate 60 by the cleaving unit 30 by the cooling unit 40. When the coolant C is sprayed on a circular area (corresponding to the spray pattern 67) wider than the tensile stress generated by cooling the substrate 60, the tensile stress generated by heating by the cleaving unit 30 And superimposed. Thereby, the tensile stress generated only by heating by the cleaving unit 30 is further expanded, and the stress expansion effect generated at the tip of the crack 68 of the substrate to be processed 60 is further increased, so that the crack 68 can be advanced at a higher speed. . When the crack 68 is caused to propagate by the thermal stress (tensile stress) generated by heating the workpiece substrate 60 and the tensile stress generated by cooling the workpiece substrate 60 in this way, the tip of the crack 68 is Usually, it is located in the vicinity of the cooling unit 40.

  In the above, prior to locally heating the substrate 60 to be processed by the cleaving unit 30, a region in which heating is locally performed on the substrate to be processed 60 by the cleaving unit 30 (actually by the cleaving unit 30. When a region about the same size or wider than the region where the heating is performed (corresponding to the irradiation pattern 65) is locally preheated, the region in which the heating is locally performed on the substrate 60 by the cleaving unit 30 is performed. The temperature can be raised in advance, and heating for cleaving performed by the cleaving unit 30 can be effectively assisted.

  Further, after locally cooling the workpiece substrate 60 by the cooling unit 40, the pressurizing unit 45 causes the cleaving unit 30 and the cooling unit 40 included in the heating / cooling unit 10 to locally localize the workpiece substrate 60. When a portion separated by a predetermined distance from the tip of the crack 68 that propagates on the workpiece substrate 60 is pressed in such a manner as to follow the movement of the heated and cooled region, the portion is locally applied to the portion. A mechanical stress is applied, and the crack 68 that propagates on the workpiece substrate 60 is expanded by cooperation with the substrate support 54 that supports the back surface of the workpiece substrate 60. In this way, the pressure unit 45 and the substrate support 54 act so as to give a slight gap to the cut surface of the substrate 60 to be processed, and only the surface of the substrate 60 to be processed is cleaved or the substrate 60 is processed. Even in the case where the uncut surface is slightly left without reaching the back surface, it is possible to sufficiently reach the back surface of the substrate 60 to be cut and to achieve the entire cutting.

  Here, the most important point regarding the pressurizing mechanism including the pressurizing unit 45 and the substrate support 54 is that the preheating unit 20, the cleaving unit 30 and the cooling unit 40 included in the heating / cooling unit 10 substantially cleave the workpiece 60. After the completion, mechanical pressure is applied to the substrate 60 by the pressurizing unit 45 and the substrate support 54. That is, the mechanical stress applied by the pressurizing unit 45 and the substrate support 54 acts on the fractured surface of the workpiece substrate 60 that has already been generated, and the workpiece substrate 60 is expanded by expanding the fractured surface. Is penetrated in the thickness direction. In other words, while the processing substrate 60 is cleaved by the heating / cooling unit 10 (the preheating unit 20, the cleaving unit 30, and the cooling unit 40), the portion of the processing substrate 60 is actively deformed (curved or the like). ) Is not added.

  As described above, as a conventional cleaving system, a substrate to be processed in a state where mechanical stress (tensile stress) is superimposed on local thermal stress (tensile stress) generated by laser beam irradiation. It is known that cleaves. Here, in such a conventional cleaving system, mechanical stress is applied by deformation of the substrate to be processed before cleaving the substrate to be processed or during cleaving. The tensile stress applied to the crack tip at the time of cleaving is the sum of the local thermal stress generated by laser beam irradiation and the mechanical stress due to deformation. Here, it is extremely difficult to apply the mechanical stress due to such deformation symmetrically and evenly with respect to the planned cutting line of the substrate to be processed. For this reason, in such cleaving due to tensile stress, the nonuniformity of mechanical stress due to deformation disturbs the cleaving uniformity due to laser beam irradiation. As a result, the quality of the substrate to be processed (the surface of the fractured surface) Deterioration of roughness, straightness, and perpendicularity of the cut section to the glass surface is caused.

  Hereinafter, details of such a phenomenon will be described with reference to FIGS. 16A shows the cleaving system 1 according to the first embodiment of the present invention (a system for applying mechanical stress to the substrate 60 after cleaving the substrate 60 to be processed). 16 (b) shows the quality of the cut surface of the substrate 60 to be processed, and FIG. 16 (b) shows the conventional cleaving system (when the substrate 60 is cleaved and at the same time mechanically applied to the substrate 60). The quality of the cut surface of the to-be-processed substrate 60 obtained by the system which applies stress is shown. FIG. 16C is a schematic diagram showing a state in which the substrate 60 to be processed is cleaved, and “swell” and “position” shown in FIG. 16C are shown in FIGS. 16A and 16B, respectively. It corresponds to “swell” and “position” shown. Reference numerals 68 and 71 denote a breaking line (crack) and a breaking line, respectively.

  As shown in FIG. 16 (a), in the cut substrate to be processed 60 obtained by the cleaving system 1 according to the first embodiment of the present invention, the actual cleaving line (crack from the cleaving planned line 71 is obtained. ) The width of the undulation of 68 is -0.02 mm to 0.1 mm, the amplitude is small, and the repetition of pulsation is smooth. On the other hand, as shown in FIG. 16B, in the substrate to be processed 60 obtained by the conventional cleaving system, the width of the undulation of the actual cleaving line (crack) 68 from the cleaving line 71 is 0 mm to. The amplitude is considerably large at 0.4 mm, and the repetition of pulsation is also large.

  As is clear from the above, when mechanical stress is applied to the substrate to be processed 60 after cleaving the substrate to be processed 60 as in the first embodiment of the present invention, Compared to the conventional case where mechanical stress is simultaneously applied while cleaving the workpiece substrate 60, the quality of the fractured surface of the workpiece substrate 60 (particularly straightness of the fractured surface) is better. It is. Although not shown as data, when two-dimensional smoothness of a minute surface (for example, a surface of width 10 t [mm] × thickness t [mm]) in both cases is observed, it is clear. The former gave better results than the latter.

  As described above, according to the first embodiment of the present invention, the region that is locally heated on the substrate 60 to be processed by the laser beam irradiation is taken along the planned cutting line 71 of the substrate 60 to be processed. The pressure unit 45 and the substrate support 54 are moved so as to cause a crack 68 to develop in the workpiece substrate 60 and to cause the crack to propagate on the workpiece substrate 60 in this way. Thus, a mechanical stress is locally applied to a portion separated from the tip of the crack 68 by a predetermined distance. At this time, the pressurizing unit 45 is moved in conjunction with the heating / cooling unit 10 (the preheating unit 20, the cleaving unit 30, and the cooling unit 40), and mechanical stress is locally applied on the substrate 60 to be processed. The region to be processed is moved along the planned cutting line 71 of the substrate to be processed 60 so as to follow the movement of the region heated locally on the substrate to be processed 60. As described above, a mechanical stress is applied locally so that a crack 68 is generated in the workpiece substrate 60 by irradiation of the laser beam and then the crack 68 is expanded (that is, a gap is provided in the split section). Therefore, the quality of the fractured surface of the substrate 60 to be processed which is generated by applying mechanical stress when the crack 68 is formed (surface roughness, straightness, perpendicularity of the fractured surface to the glass surface). ) Can be suppressed, and the fractured section can be effectively reached to the back surface of the substrate 60 to be processed. For this reason, it is possible to increase the cutting speed of the substrate to be processed 60 while maintaining the quality of the substrate to be processed 60 (surface roughness, straightness, and perpendicularity to the glass surface of the cut surface). .

  In addition, according to the first embodiment of the present invention, mechanical stress is locally applied so as to expand the crack 68 generated in the workpiece substrate 60 by the laser beam irradiation. Even when a liquid crystal substrate in which two glass substrates (an upper substrate 61 and a lower substrate 62) are bonded together with a sealant 63 is used as the substrate to be processed 60, the crack 68 is expanded (that is, split). By providing a gap in the cross section, the portion of the glass substrate having the sealing material 63 made of an adhesive adhesive member can be easily separated, and high-quality cleaving can be easily realized.

  Furthermore, according to the first embodiment of the present invention, since the cleaving process is performed by irradiating the workpiece substrate 60 with a laser beam, no burrs or dust are generated on the surface of the fractured surface. A cleaning process, a polishing process for finishing, and the like can be omitted, and there is no possibility of damage or chipping even on a thin substrate (for example, 0.4 mm or less). In particular, in the case of a thin substrate, since the time until the heat of the laser beam is transmitted to the back surface of the substrate is shortened, if the power of the laser beam is the same, the cleaving can be performed at a higher speed. If the beam moving speed (cleaving speed) is the same, the cleaving can be performed with a laser beam having a smaller power, and the system can be realized in a small size and at a low cost.

  In the first embodiment described above, the heating / cooling unit 10 (the preheating unit 20, the cleaving unit 30, and the cooling unit 40) and the pressure unit 45 move at the same relative speed with respect to the substrate 60 to be processed. However, separate moving stages are attached to the heating / cooling unit 10 (the preheating unit 20, the cleaving unit 30 and the cooling unit 40) and the pressure unit 45, respectively, on the cleaving line 71 of the substrate 60 to be processed. The relative speeds may be made different at a predetermined timing, for example, by moving the parts apart from each other.

  In the first embodiment described above, in the preheating unit 20 and the cleaving unit 30 included in the heating / cooling unit 10, the polygon mirrors 23 and 33 are used as optical components for scanning the laser on the substrate 60. However, the present invention is not limited to this. For example, a galvano mirror or a cylindrical reflector may be used. In addition, as such an optical component, any of a transmission type and a non-transmission type (reflection type) can be used.

  Furthermore, in the first embodiment described above, the preheating unit 20 and the cleaving unit 30 included in the heating / cooling unit 10 directly cause cracks in the substrate 60 to be processed. Is further provided with a cutting line lead unit that moves in advance, and is relatively moved along the planned cutting line with a disk or the like in contact with the surface of the substrate 60 to be processed. An indentation (fine crack) having a depth of about several μm to several tens of μm may be formed. Thereby, the straightness of the crack 68 formed by the preheating unit 20 and the cleaving unit 30 of the heating / cooling unit 10 can be improved.

  Further, in the first embodiment described above, the processing unit 5 and the processing target unit 5 are moved by moving the processing substrate 60 side (substrate holder 51 side) relative to the processing unit 5 by the moving stage 53 of the moving unit 50. Although the relative movement with the processed substrate 60 is realized, the present invention is not limited to this, and the relative movement between the processed unit 5 and the processed substrate 60 is realized by moving the processed unit 5 side. You may make it do.

  Further, in the first embodiment described above, a liquid crystal substrate in which two glass substrates (an upper substrate 61 and a lower substrate 62) are bonded together with a sealant 63 as a substrate to be processed 60 to be cleaved. Although being used, a high-quality and high-speed cleaving process can be similarly performed on a liquid crystal substrate in a state where a liquid crystal material is injected between the upper substrate 61 and the lower substrate 62. Specifically, for example, a portion outside the sealing material for sealing the liquid crystal in such a liquid crystal substrate (about 1 mm from the liquid crystal edge in the in-plane direction of the substrate and the thickness of the substrate in the thickness direction of the substrate) (Sites separated by about 1 mm to 0.5 mm) are cleaved. However, in this case, the surface temperature of the glass substrate does not exceed the glass strain point (the temperature at which the characteristics change due to heat), and the liquid crystal is damaged at the liquid crystal contact portion on the back surface of the glass substrate, and normal operation is performed. The power and irradiation time of the laser beams LB1 and LB2 irradiated by the preheating unit 20 and the cleaving unit 30 and the amount and temperature of the coolant C sprayed by the cooling unit 30 are set so that the temperature does not become low (about 80 ° C.). It is preferable to adjust the preheating temperature, heating temperature, cooling temperature, etc.

  Furthermore, in the first embodiment described above, the pressurizing unit 48 having the roller members 48, 48A to 48F is used as a mechanism for pressurizing the substrate 60 to be processed from the surface side. As shown in FIG. 6, an air pad (gas blowing mechanism) 80 </ b> A that pressurizes the substrate 60 by blowing air (gas such as air or other gas (including nitrogen or oxygen)) onto the substrate 60 may be used. Here, at least a pair of the air pads 80 </ b> A are provided so as to pressurize portions of the substrate to be processed 60 that are located on both sides of the planned cutting line 71, and move along the planned cutting line 71 of the processed substrate 60. Thus, the region to be pressurized on the substrate to be processed 60 is configured to move. The air pad 80A has an air pad main body 82 supported by the support 81, and an air passage 83 formed in the support 81 and an air outlet 84 formed in the air pad main body 82. The ejected air is blown toward the substrate 60 to be processed. Here, in the air pad 80 </ b> A shown in FIG. 6, the air pad main body 82 is pressed against the surface of the substrate to be processed 60 to pressurize it. A gap is formed by erupting. Therefore, both the substrate to be processed 60 and the air pad main body 82 are in a non-contact state, and even when the air pad 80A is moved along the surface of the substrate to be processed 60, the surface of the substrate to be processed 60 is damaged. There is nothing to do. Further, in the air pad 80A shown in FIG. 6, the temperature of the air blown to the substrate to be processed 60 can be controlled to be appropriately high or low, and accordingly, the surface temperature of the substrate to be processed 60 is controlled. be able to.

  Here, in the configuration shown in FIG. 6, the workpiece substrate 60 is pressurized by two air pads 80A separated from each other, but not limited to this, as shown in FIGS. 7 and 8A and 8B. In addition, the workpiece substrate 60 may be pressurized by the integrated air pads 80B and 80C. Of these, as shown in FIG. 7, the air pad 80B has two air jet outlets 85 branched from one air passage 83 in the air pad main body 82, and cleaves the air supplied from the air passage 83. By allocating to the left and right of the planned line 71, air is blown and pressurized to the portions of the substrate to be processed 60 located on both sides of the planned cutting line 71. 8A and 8B, the air pad 80C has a large opening 86 connected to the air passage 83 formed on the bottom surface 82a of the air pad main body 82, and is supplied from the air passage 83. By flowing the air through the opening 86, the air is blown and pressurized to the portions of the substrate to be processed 60 that are located on both sides of the planned cutting line 71.

  6, 7, and 8 (a) and 8 (b), the substrate support that pressurizes the substrate 60 to be processed from the back side is replaced with a substrate support 54 as illustrated. Substrate supports 54A to 54F having various cross-sectional shapes (polygonal, trapezoidal, bowl-shaped, semicircular, circular, elliptical, etc.) as shown in 4 (a) to (f) can also be used.

  Furthermore, in the first embodiment described above, the substrate supports 54 and 54A to 54F are used as a mechanism for pressurizing the substrate 60 to be processed from the back surface side. However, the present invention is not limited to this, as shown in FIG. Alternatively, the substrate holder 91 </ b> A that pressurizes the substrate 60 by blowing air (gas such as air or other gas (including nitrogen or oxygen)) onto the back surface of the substrate 60 may be used. Here, the substrate holder 91 </ b> A has an air passage 92 for supplying air, and a circular opening that is connected to the air passage 92 and opens toward a portion of the substrate to be processed 60 located on the planned cutting line 71. And a plurality of air jets 93. A plurality of air jets 93 are arranged along the planned cutting line 71 of the substrate to be processed 60, and the air supplied from the air passage 92 is positioned on the planned cutting line 71 in the processed substrate 60. It is comprised so that a part may be sprayed and pressurized. Here, the temperature of the gas ejected from the air ejection port 93 of the substrate holder 91 </ b> A does not need to be the atmospheric temperature, and a high-temperature gas (such as about 70 ° C.) that does not damage the substrate 60 to be processed is used. It may be. Thereby, it becomes possible to pre-heat the to-be-processed substrate 60 with the gas ejected from the air jet outlet 93, and it is possible to further improve the cleaving speed and cleaving quality of the to-be-processed substrate 60.

  Furthermore, in the first embodiment described above, the roller members 48, 48A to 48F or the air pads 80A to 80C that pressurize the substrate 60 to be processed from the surface side are moved along the planned cutting line 71 of the substrate 60 to be processed. However, the present invention is not limited to this, and as shown in FIGS. 10A and 10B, the planned cutting line of the substrate to be processed 60 is moved. In the substrate holder 91 </ b> B in which a plurality of air jets 93 are arranged along 71, the air ejection state of each air jet 93 is sequentially switched along the planned cutting line 71 of the substrate 60 to be processed by an electric valve or the like. Accordingly, the region to be pressed on the substrate to be processed 60 may be moved. 10A and 10B, a substrate to be processed is obtained by sucking air such as air from a plurality of air suction ports 95 formed on the mounting surface 91a of the substrate holder 91B through an air passage 94. 60 is pressed, but the substrate 60 to be processed may be pressed from the surface side by a roller member or an air pad. In FIGS. 10A and 10B, air is sucked from all the air suction ports 95 formed in the substrate holder 91B through the air passage 94 with the same suction force. In conjunction with the switching of the air ejection state by the ejection port 93, the air suction state (the presence or absence of suction or suction force) by each air suction port 95 is sequentially switched along the planned cutting line 71 of the substrate 60 to be processed. May be.

  Furthermore, in the first embodiment described above, by moving or operating only one of the mechanism for pressing the substrate to be processed 60 from the front surface side and the mechanism for pressing the substrate to be processed from the back surface side, The region to be pressed on the substrate to be processed 60 is moved. However, the present invention is not limited to this, and as shown in FIGS. 11 to 15, a mechanism for pressing the substrate to be processed 60 from the surface side and the substrate to be processed You may make it move the area | region pressurized on the to-be-processed substrate 60 by moving or operating both the mechanisms which press 60 from the back surface side.

  Specifically, for example, as shown in FIGS. 11 and 12, air (a gas such as air or other gas (including nitrogen, oxygen, etc.)) is blown onto the substrate 60 to be processed above the substrate 60 to be processed. An air pad (gas blowing mechanism) 80D for pressurization is disposed, and a pressurizing unit (not shown for the entire configuration) having a roller member 104 (105) rotatably attached to the shaft 103 below the substrate 60 to be processed. ) Should be placed. Here, each of the pressure units having the air pad 80D and the roller member 104 (105) is configured to move along the planned cutting line 71 of the substrate 60 in a synchronized state. As shown in FIGS. 11 and 12, the air pad 80D has an air passage 87 connected to a bottom surface 82a of the air pad main body 82 and an opening 88 formed in the bottom surface 82a. The supplied air is configured to be blown and pressurized to the portions of the substrate to be processed 60 located on both sides of the planned cutting line 71 through the air jet port 89. Further, the roller member 104 (105) is incorporated in a pressure unit having the same configuration as the pressure unit 45 shown in FIG. 1 and is disposed in the opening 102 of the substrate holder 101 as a whole. .

  Further, as shown in FIG. 13, air (a gas such as air or other gas (including nitrogen, oxygen, etc.)) is blown onto the substrate 60 both above and below the substrate 60 to be processed. You may make it arrange | position the air pad (gas blowing mechanism) 80D and 113A to press. Here, both of the air pads 80D and 113A are configured to move along the planned cutting line 71 of the substrate to be processed 60 in a state of being synchronized with each other. The air pad 80D has the same configuration as the air pad 80D shown in FIGS. The air pad 113 </ b> A has an air pad main body 115 supported by the support body 114, and an air passage 116 formed in the support body 114 and an air outlet 117 formed in the air pad main body 115. The ejected air is blown toward the substrate 60 to be processed. The air pad 113A is disposed in the opening 102 of the substrate holder 101.

  Further, as shown in FIG. 14, a pressurizing unit (omitted from the overall configuration) having a roller member 48 rotatably attached to a shaft 49 is disposed above the substrate 60 to be processed. An air pad (gas blowing mechanism) 113B that pressurizes the substrate 60 by blowing air (a gas such as air or other gas (including nitrogen or oxygen)) onto the substrate 60 may be disposed. Here, both the pressure unit having the roller member 48 and the air pad 113B are configured to move along the planned cutting line 71 of the substrate to be processed 60 in a synchronized state. The pressure unit having the roller member 48 has the same configuration as the pressure unit 45 shown in FIG. The air pad 113 </ b> B has an air pad main body 118 supported by the support body 114, and an air passage 116 formed in the support body 114 and an air outlet 119 formed in the air pad main body 118. The ejected air is blown onto the substrate 60 to be processed. The air pad 113B is disposed in the opening 102 of the substrate holder 101.

  Further, as shown in FIG. 15, a pressure unit having roller members 48G and 105 rotatably attached to shafts 49 and 103, both above and below the substrate 60 to be processed (the entire configuration is omitted). ) May be arranged. Here, each of the pressure units having the roller members 48G and 105 is configured to move along the planned cutting line 71 of the substrate 60 in a synchronized state. The roller member 48G has a configuration similar to that of the pressure unit 45 shown in FIG. Further, the roller member 105 is incorporated in a pressure unit having the same configuration as the pressure unit 45 shown in FIG. 1 and is disposed in the opening 102 of the substrate holder 101 as a whole.

Second Embodiment Next, a second embodiment of the present invention will be described. In the second embodiment of the present invention, the processed substrate 60 is cleaved by the heating / cooling unit 10 disposed below the processed substrate 60 with respect to the processed substrate 60 disposed on the substrate holder 51A. Except for the point which processes, others are as substantially the same as 1st Embodiment mentioned above. In the second embodiment of the present invention, the same parts as those in the first embodiment described above are denoted by the same reference numerals, and detailed description thereof is omitted.

  As shown in FIG. 17, the cleaving system 1 ′ according to the second embodiment of the present invention is similar to the case of the first embodiment described above, in the heating / cooling unit 10 (preheating unit 20, cleaving unit). 30 and a cooling unit 40) and a pressurizing unit 120. In the cleaving system 1 ′ shown in FIG. 17, a processing unit comprising the heating / cooling unit 10 (preheating unit 20, cleaving unit 30 and cooling unit 40) and pressure unit 120 is moved by a moving stage (not shown). 5 is moved relative to the substrate to be processed 60 (substrate holder 51A), so that the relative movement between the processing unit 5 and the substrate to be processed 60 is realized.

Here, as shown in FIGS. 17 and 18, an opening 55 is formed in the substrate holder 51 </ b> A on which the substrate 60 to be processed is placed, and laser light from the heating / cooling unit 10 or the like is transmitted through the opening 55. The coolant is irradiated or sprayed on the substrate 60 to be processed. (In FIG. 18, the heating and cooling unit 10 disposed in the opening 55 of the substrate holder 51A is omitted for easy understanding of the configuration of the characteristic portion of the present embodiment.)
Further, a pressure unit 120 is disposed above the substrate holder 51A on which the substrate 60 to be processed is placed. Here, the pressure unit 120 is for applying mechanical stress locally to the substrate 60 to be processed, and includes a pressure unit main body 121, an arm 122 attached to the pressure unit main body 121, There is a roller member 123 that is rotatably attached to the tip of the arm 122 via a shaft 124 and presses and presses the substrate to be processed 60 while being in rolling contact with the surface of the substrate to be processed 60. The pressurizing unit 120 is relatively moved along the planned cutting line 71 on the substrate 60 to be processed, and in accordance with this, a region pressed by the roller member 123 on the substrate 60 to be processed. Also moves along the planned cutting line 71 of the substrate 60 to be processed. As described above, the roller member 123 moves while being in rolling contact with the surface of the substrate 60 to be processed without slipping. Here, the pressure unit 120 is the same as the pressure unit 45 except for the point that the substrate 60 is pressed by one roller member 123.

  In addition, the pressurization mechanism is comprised by the pressurization unit 120 (2nd pressurization part) and substrate holder 51A (1st pressurization part) which were mentioned above.

  More specifically, as shown in FIG. 18, the roller member 123 of the pressure unit 120 is disposed above the substrate to be processed 60, and a portion of the substrate to be processed 60 that is positioned on the planned cutting line 71 is a laser. Pressure is applied from the back surface (second surface) opposite to the surface (first surface) irradiated with the beams LB1 and LB2 toward the surface (first surface). At this time, the substrate holder 51A that supports the substrate 60 to be processed is a reaction against the pressure applied by the roller member 123 of the pressure unit 120 by the portions located on both sides of the opening 55 formed in the substrate holder 51A. The portions of the substrate to be processed 60 that are located on both sides of the planned cutting line 71 are pressurized from the surface (first surface) on the side irradiated with the laser beams LB1 and LB2 toward the back surface (second surface). In this way, mechanical stress (see reference numeral 69) is applied to the crack 68 formed by the heating / cooling unit 10 that moves prior to the pressurizing unit 120, and the crack 68 enters deeper, so that the workpiece is processed. The substrate 60 is easily separated at the fractured surface.

  As described above, according to the second embodiment of the present invention, after the crack 68 is generated in the workpiece substrate 60 by the laser beam irradiation, the crack 68 is expanded (that is, the gap is provided in the split section). Since mechanical stress is applied locally, as in the case of the first embodiment described above, the work to be caused by mechanical stress being applied when the crack 68 is formed Degradation of the quality of the cut surface of the substrate 60 (surface roughness of the cut surface, straightness, perpendicularity of the cut surface with respect to the glass surface) can be suppressed, and the cut surface can be effectively reached to the back surface of the substrate 60 to be processed It is. For this reason, it is possible to increase the cutting speed of the substrate to be processed 60 while maintaining the quality of the substrate to be processed 60 (surface roughness, straightness, and perpendicularity to the glass surface of the cut surface). .

  In the second embodiment described above, the substrate holder 51 </ b> A is used to apply the reaction against the pressure applied by the roller member 123 of the pressure unit 120 to both sides of the planned cutting line 71 on the substrate 60 to be processed. In the substrate holder 51B in which a plurality of air passages 56 are arranged along the planned cutting line 71 of the substrate to be processed 60 as shown in FIG. You may make it pressurize the to-be-processed substrate 60 by attracting | sucking air through the air path 56 from the several air suction opening 57 formed in the mounting surface 51a in which the to-be-processed substrate 60 is mounted. At this time, the air suction state of each air suction port 57 is sequentially switched along the planned cutting line 71 of the substrate 60 to be moved by an electric valve or the like, thereby moving the region pressurized on the substrate 60 to be processed. You may make it make it. Here, when the air suction state by each air suction port 57 is sequentially switched along the planned cutting line 71 of the substrate 60 by an electric valve or the like in this way, as shown in FIG. The unit 120 itself can be omitted.

  In the second embodiment described above, the pressure unit 120 having the roller member 123 is used as a mechanism for pressing the substrate 60 to be processed from the back surface side. As described above, an air pad (gas spraying mechanism) 130 that sprays air (a gas such as air or other gas (including nitrogen or oxygen)) and pressurizes the substrate 60 may be used. Here, the air pad 130 is configured to move along the planned cutting line 71 of the substrate to be processed 60, thereby moving a region to be pressurized on the substrate to be processed 60. The air pad 130 has an air pad main body 132 supported by the support 131, and an air passage 133 formed in the support 131 and an air outlet 134 formed in the air pad main body 132. The ejected air is blown onto the substrate 60 to be processed.

  Furthermore, in the second embodiment described above, the pressure unit 120 having the roller member 123 disposed above the substrate to be processed 60 is used as a mechanism for pressing the substrate to be processed 60 from the back side. However, the present invention is not limited to this, and an air pad (gas suction mechanism) 140 that sucks and pressurizes air such as air, which is disposed below the substrate to be processed 60, may be used as shown in FIG. . Here, the air pad 140 is configured to be able to move a region to be pressed on the substrate to be processed 60 by moving along the planned cutting line 71 of the substrate to be processed 60. The air pad 140 has an air pad main body 142 supported by the support 141, and an air passage 143 formed in the support 141 and an air suction port 144 formed in the air pad main body 142. The workpiece substrate 60 is pressurized by sucking air. At this time, as shown in FIG. 23, the pressure unit 120 having the roller member 123 disposed above the substrate 60 to be processed is used together with the air pad 140 disposed below the substrate 60 to be processed. May be.

  In the second embodiment described above, the processing unit 5 and the workpiece are processed by moving the processing unit 5 side with respect to the substrate 60 (substrate holder 51A) by a moving stage (not shown). Although the relative movement with respect to the substrate 60 is realized, the present invention is not limited to this. The relative movement between the processing unit 5 and the substrate 60 to be processed by moving the substrate to be processed 60 (substrate holder 51A side). Movement may be realized.

The figure which shows the whole structure of the cleaving processing system which concerns on the 1st Embodiment of this invention. The figure for demonstrating the mode of the cutting process of the to-be-processed substrate performed with the cleaving system shown in FIG. The figure for demonstrating the detail of the pressurization mechanism of the cleaving processing system shown in FIG. The figure which shows the modification of the board | substrate support contained in the pressurization mechanism of the cleaving processing system shown in FIG. The figure which shows the modification of the roller member of the pressurization unit contained in the pressurization mechanism of the cleaving processing system shown in FIG. The figure which shows the 1st modification of the pressurization mechanism of the cleaving processing system shown in FIG. The figure which shows the 2nd modification of the pressurization mechanism of the cleaving processing system shown in FIG. The figure which shows the 3rd modification of the pressurization mechanism of the cleaving processing system shown in FIG. The figure which shows the 4th modification of the pressurization mechanism of the cleaving processing system shown in FIG. The figure which shows the 5th modification of the pressurization mechanism of the cleaving processing system shown in FIG. The figure which shows the 6th modification of the pressurization mechanism of the cleaving processing system shown in FIG. The figure which shows the 7th modification of the pressurization mechanism of the cleaving processing system shown in FIG. The figure which shows the 8th modification of the pressurization mechanism of the cleaving processing system shown in FIG. The figure which shows the 9th modification of the pressurization mechanism of the cleaving processing system shown in FIG. The figure which shows the 10th modification of the pressurization mechanism of the cleaving processing system shown in FIG. The figure for demonstrating the quality of the cut surface of the to-be-processed substrate obtained by the cleaving processing system shown in FIG. The figure which shows the whole structure of the cleaving processing system which concerns on the 2nd Embodiment of this invention. The figure which shows the 1st modification of the pressurization mechanism of the cleaving processing system shown in FIG. The figure which shows the 2nd modification of the pressurization mechanism of the cleaving processing system shown in FIG. The figure which shows the 3rd modification of the pressurization mechanism of the cleaving processing system shown in FIG. The figure which shows the 4th modification of the pressurization mechanism of the cleaving processing system shown in FIG. The figure which shows the 5th modification of the pressurization mechanism of the cleaving processing system shown in FIG. The figure which shows the 6th modification of the pressurization mechanism of the cleaving processing system shown in FIG.

Explanation of symbols

1,1 'Cleaving processing system 5 Processing unit 10 Heating / cooling unit 20 Preheating unit 21 Laser oscillator 22 Reflecting mirror 23 Polygon mirror 30 Cleaving unit 31 Laser oscillator 32 Reflecting mirror 33 Polygon mirror 40 Cooling unit 41 Cooling nozzle 45 Pressure unit 46 Pressure unit main body 47 Arm 48, 48A to 48F, 48G Roller member 49 Shaft 50 Moving unit 51, 51A, 51B Substrate holder 51a Placement surface 52 Positioning pin 53 Moving stage 54, 54A to 54F Substrate support 55 Opening 56 Air passage 57 Air suction port 60 Substrate 61 Upper substrate 62 Lower substrate 63 Sealing material 65, 66 Laser beam irradiation pattern 67 Coolant spray pattern 68 Crack (breaking line)
69 Stress 71 Planned lines 80A to 80D Air pad 81 Support 82 Air pad main body 82a Bottom surface 83, 87 Air passages 84, 85, 89 Air outlets 86, 88 Openings 91A, 91B Substrate holder 91a Placement surfaces 92, 94 Air passage
93 Air outlet 95 Air suction port 101 Substrate holder 102 Opening portion 103 Shaft 104, 105 Roller member 113A, 113B Air pad 114 Support body 115, 118 Air pad main body 116 Air passage 117, 119 Air outlet 120 Pressure unit 121 Addition Pressure unit body 122 Arm 123 Roller member 124 Shafts 130, 140 Air pads 131, 141 Support bodies 132, 142 Air pad bodies 133, 143 Air passage 134 Air outlet 144 Air suction ports LB1, LB2 Laser beam C Coolant

Claims (6)

In the cleaving processing system that heats the processing substrate made of a brittle material locally and cleaves the processing substrate by generating a crack in the processing substrate,
A cleaving unit for generating a crack in the processed substrate by irradiating the processed substrate with a laser beam to locally heat the processed substrate;
A region heated locally on the substrate to be processed is formed on the substrate to be processed so that a crack generated in the substrate to be processed by the cleaving unit propagates along a planned cutting line of the substrate to be processed. A mobile unit that moves relative to the
The so spread press crack progresses in a processing substrate, and a pressure mechanism for applying a local stress to the spaced apart portions a predetermined distance from the tip of the crack,
The pressurizing said by pressure mechanism locally stress a processing substrate is applied region, the object so as to follow the movement of the area locally heated a processing substrate is performed by said cleaving unit It is configured to move along the planned cutting line of the processed substrate ,
The pressure mechanism is
A portion located on either side of the expected splitting line of the substrate to be processed, a first pressure to pressurize the first surface and the opposite second surface of the side where the laser beam is irradiated,
A portion located on the expected splitting line of the substrate to be processed, and a second pressure for pressurizing toward the first surface,
At least any one of the area | region pressurized by the said 1st pressurization part and the area | region pressurized by the said 2nd pressurization part is comprised so that it may move along the said cutting plan line of the said to-be-processed substrate. And
At least one of the first pressurizing unit and the second pressurizing unit has a plurality of gas jets arranged along the planned cutting line of the substrate to be processed. A region to be pressurized on the substrate to be processed is moved by sequentially switching a gas ejection state from the ejection port along the planned cutting line of the substrate to be processed. Cleaving processing system. In the cleaving processing system that heats the processing substrate made of a brittle material locally and cleaves the processing substrate by generating a crack in the processing substrate,
A cleaving unit for generating a crack in the processed substrate by irradiating the processed substrate with a laser beam and locally heating the processed substrate;
A region heated locally on the substrate to be processed is formed on the substrate to be processed so that a crack generated in the substrate to be processed by the cleaving unit propagates along a planned cutting line of the substrate to be processed. A mobile unit that moves relative to the
The so spread press crack progresses in a processing substrate, and a pressure mechanism for applying a local stress to the spaced apart portions a predetermined distance from the tip of the crack,
The pressurizing said by pressure mechanism locally stress a processing substrate is applied region, the object so as to follow the movement of the area locally heated a processing substrate is performed by said cleaving unit It is configured to move along the planned cutting line of the processed substrate,
The pressure mechanism is
A portion located on either side of the expected splitting line of the substrate to be processed, a first pressure to pressurize toward the second surface opposite the first surface on which the laser beam is irradiated,
A portion located on the expected splitting line of the substrate to be processed, and a second pressure for pressurizing toward the first surface,
At least any one of the area | region pressurized by the said 1st pressurization part and the area | region pressurized by the said 2nd pressurization part is comprised so that it may move along the said cutting plan line of the said to-be-processed substrate. And
At least one of the first pressurizing unit and the second pressurizing unit has a plurality of gas suction ports arranged along the planned cutting line of the substrate to be processed. A region that is pressurized on the substrate to be processed is moved by sequentially switching the state of gas suction by the suction port along the planned cutting line of the substrate to be processed. Cleaving processing system. A cooling unit for locally cooling a region heated locally on the substrate to be processed by the cleaving unit;
The moving unit moves a region heated and cooled locally on the substrate to be processed by the cleaving unit and the cooling unit relative to the substrate to be processed. Item 3. The cleaving system according to any one of Items 1 and 2 . In the cleaving method of locally heating a substrate to be processed made of a brittle material and performing cleaving by generating a crack in the substrate to be processed by the thermal stress,
A preparation step of preparing a substrate to be cut;
While the substrate to be processed is locally heated by irradiating the substrate to be processed with the laser beam, the region heated locally on the substrate to be processed is aligned with the planned cutting line of the substrate to be processed. A cleaving step of causing the crack to develop and causing the crack to occur in the substrate to be processed,
The so spread press crack progresses in a processing substrate, and a pressurization step of applying a local stress to the spaced apart portions a predetermined distance from the tip of the crack,
In the pressurizing step, the region where stress is locally applied on the substrate to be processed follows the movement of the region heated locally on the substrate to be processed. is moved along the expected splitting line, the portion located on either side of the expected splitting line of the substrate to be processed by the first pressing is opposite the first surface on which the laser beam is irradiated pressurized to the second surface, the portion located at the expected splitting line of the substrate to be processed by the second pressure is pressurized toward the first surface side, by the first pressure At least one of the region to be pressed and the region to be pressed by the second pressing unit moves along the planned cutting line of the substrate to be processed,
At least one of the first pressurizing unit and the second pressurizing unit has a plurality of gas jets arranged along the planned cutting line of the substrate to be processed. A cleaving method characterized in that a region to be pressed on the substrate to be processed is moved by sequentially switching a gas ejection state at the ejection port along the planned cutting line of the substrate to be processed. In the cleaving method of locally heating a substrate to be processed made of a brittle material and performing cleaving by generating a crack in the substrate to be processed by the thermal stress,
A preparation step of preparing a substrate to be cut;
While the substrate to be processed is locally heated by irradiating the substrate to be processed with the laser beam, the region heated locally on the substrate to be processed is aligned with the planned cutting line of the substrate to be processed. The cleaving step of causing the crack to progress while causing the crack to be processed on the substrate to be processed,
The so spread press crack progresses in a processing substrate, and a pressurization step of applying a local stress to the spaced apart portions a predetermined distance from the tip of the crack,
In the pressurizing step, the region where stress is locally applied on the substrate to be processed follows the movement of the region heated locally on the substrate to be processed. is moved along the expected splitting line, the portion located on either side of the expected splitting line of the substrate to be processed by the first pressing is opposite the first surface on which the laser beam is irradiated pressurized to the second surface, the portion located at the expected splitting line of the substrate to be processed by the second pressure is pressurized toward the first surface side, by the first pressure At least one of the region to be pressed and the region to be pressed by the second pressing unit moves along the planned cutting line of the substrate to be processed,
At least one of the first pressurizing unit and the second pressurizing unit has a plurality of gas suction ports arranged along the planned cutting line of the substrate to be processed. A cleaving method , wherein a region to be pressed on the substrate to be processed is moved by sequentially switching a gas suction state by a suction port along the planned cutting line of the substrate to be processed. 6. The cleaving method according to claim 4 , wherein, in the cleaving step, a region heated locally on the substrate to be processed is cooled.

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