JP4615249B2 - Polishing cloth for finish polishing - Google Patents
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- JP4615249B2 JP4615249B2 JP2004148888A JP2004148888A JP4615249B2 JP 4615249 B2 JP4615249 B2 JP 4615249B2 JP 2004148888 A JP2004148888 A JP 2004148888A JP 2004148888 A JP2004148888 A JP 2004148888A JP 4615249 B2 JP4615249 B2 JP 4615249B2
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- 238000005498 polishing Methods 0.000 title claims description 122
- 239000004744 fabric Substances 0.000 title claims description 75
- 239000000463 material Substances 0.000 claims description 41
- 230000006835 compression Effects 0.000 claims description 38
- 238000007906 compression Methods 0.000 claims description 38
- 239000004745 nonwoven fabric Substances 0.000 claims description 24
- 229920002803 thermoplastic polyurethane Polymers 0.000 claims description 24
- 239000000835 fiber Substances 0.000 claims description 13
- 229920001778 nylon Polymers 0.000 claims description 12
- 239000011148 porous material Substances 0.000 claims description 10
- 239000004677 Nylon Substances 0.000 claims description 9
- 229920003002 synthetic resin Polymers 0.000 claims description 5
- 239000000057 synthetic resin Substances 0.000 claims description 5
- 230000006837 decompression Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 55
- 239000002585 base Substances 0.000 description 36
- 235000012431 wafers Nutrition 0.000 description 34
- 238000000034 method Methods 0.000 description 26
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 15
- 238000005259 measurement Methods 0.000 description 14
- 229920000728 polyester Polymers 0.000 description 11
- 239000011247 coating layer Substances 0.000 description 6
- 239000002002 slurry Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 230000015271 coagulation Effects 0.000 description 2
- 238000005345 coagulation Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
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- 238000005530 etching Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000012948 isocyanate Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229920005862 polyol Polymers 0.000 description 2
- 150000003077 polyols Chemical class 0.000 description 2
- 238000007665 sagging Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- RPAJSBKBKSSMLJ-DFWYDOINSA-N (2s)-2-aminopentanedioic acid;hydrochloride Chemical class Cl.OC(=O)[C@@H](N)CCC(O)=O RPAJSBKBKSSMLJ-DFWYDOINSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004970 Chain extender Substances 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000001112 coagulating effect Effects 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- KIQKWYUGPPFMBV-UHFFFAOYSA-N diisocyanatomethane Chemical compound O=C=NCN=C=O KIQKWYUGPPFMBV-UHFFFAOYSA-N 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000002657 fibrous material Substances 0.000 description 1
- 238000007518 final polishing process Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- -1 isocyanate esters Chemical class 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000006072 paste Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000036316 preload Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229920003169 water-soluble polymer Polymers 0.000 description 1
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- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
本発明は、シリコン、ガリウム砒素、インジウム燐等の半導体ウエハの仕上げ研磨に好適な研磨布に関する。 The present invention relates to a polishing cloth suitable for finish polishing of semiconductor wafers such as silicon, gallium arsenide, and indium phosphide.
一般的な半導体ウエハ、例えば、シリコンウエハ(以下、単にウエハという)の製造加工工程においては、まず、シリコン単結晶インゴットを、ワイヤソ−や内周刃等により、一定の厚さにスライシングすることで、薄円板状のウエハを得る。このウエハ表面には、スライシングで生じた凹凸があったり、個々のウエハの厚さが不均一であったりするために、ラッピングを行って、表面の凹凸を平坦にするとともに、加工歪みの深さを均一化して、ウエハ厚さを均一に調製している。 In a manufacturing process of a general semiconductor wafer, for example, a silicon wafer (hereinafter simply referred to as a wafer), first, a silicon single crystal ingot is sliced to a certain thickness with a wire saw or an inner peripheral blade. A thin disk-shaped wafer is obtained. Since this wafer surface has irregularities caused by slicing and the thickness of individual wafers is not uniform, lapping is performed to flatten the irregularities on the surface and the depth of processing distortion. To make the wafer thickness uniform.
ラッピング後のウエハには、加工によって加工歪み層が生じ、この加工歪み層には微小なメタルや研磨粉、シリコン屑等のパーティクルが付着しているため、これらを除去するために、強酸およびフッ酸等を用いた化学的腐食法によってエッチングを行っている。 A processed strain layer is formed on the wafer after lapping due to processing, and particles such as fine metal, polishing powder, and silicon scraps are attached to the processed strain layer. In order to remove these, strong acid and fluoride are removed. Etching is performed by a chemical corrosion method using an acid or the like.
エッチング後のウエハは、表面に付着している酸をアルカリ中和し、水洗し、乾燥させてから、片面に鏡面研磨を行う。通常、鏡面研磨には、一次研磨、二次研磨、仕上げ研磨の3段階研磨があり、最終的には、仕上げ研磨により、微細な表面粗さの向上、ヘイズ(Haze。PV値10nm以下の超微細なウエハ上の凹凸)の除去を行った後、洗浄工程に進む(特許文献1参照)。 The wafer after etching is subjected to alkali neutralization of the acid adhering to the surface, washed with water and dried, and then mirror polished on one side. In general, the mirror polishing includes three steps of primary polishing, secondary polishing, and finish polishing. Finally, the finish polishing improves fine surface roughness, and has a haze (Haze, PV value of 10 nm or less). After removing the irregularities on the fine wafer, the process proceeds to a cleaning process (see Patent Document 1).
研磨装置では、ウエハが保持された上定盤を、研磨布を貼った下定盤上に置き、ウエハと研磨布とを加圧した状態で、スラリーを供給しながら、ウエハと研磨布とを相対的に摺動させることで、研磨を行う。スラリーは、コロイダル・シリカを水溶性高分子とともに純水中に分散させ、pH調整剤により、pH11程度に調整されたものである。 In the polishing apparatus, the upper surface plate holding the wafer is placed on the lower surface plate to which the polishing cloth is applied, and the wafer and the polishing cloth are relatively moved while supplying the slurry while the wafer and the polishing cloth are pressurized. Polishing is carried out by sliding the target. The slurry is prepared by dispersing colloidal silica in pure water together with a water-soluble polymer and adjusting the pH to about pH 11 with a pH adjusting agent.
上記の研磨で用いられる研磨布は、不織布タイプのものと、スエードタイプのものがあり、仕上げ研磨には、スエードタイプの研磨布が使用されている。 The polishing cloth used in the above polishing includes a nonwoven fabric type and a suede type, and a suede type polishing cloth is used for the final polishing.
従来のスエードタイプの研磨布は、図4の(A)に示すように、ポリエステル等の合成樹脂繊維の不織布にウレタン樹脂を含浸させたものを基材層1とし、次いで、この基材層1の表面に別途ウレタン樹脂のDMF溶液をコーティングする。このコーティング層2を形成するウレタン樹脂には、長鎖ポリオールとしては、ポリエーテル、ポリエステル、ポリカーボネート等があり、その鎖延長剤には、ポリオール、アミン類が使用される。このほか、ウレタン樹脂には、イソシアネート(イソシアン酸エステル)としては、トリレン・ジ・イソシアネート、メチレン・ジ・イソシアネート等がある。
As shown in FIG. 4A, a conventional suede type polishing cloth is obtained by impregnating a non-woven fabric of synthetic resin fibers such as polyester with a urethane resin as a base material layer 1, and then the base material layer 1 Separately, a DMF solution of urethane resin is coated on the surface. Examples of the urethane resin forming the
ウレタン樹脂のDMF溶液とは、ウレタン樹脂の粘度を低減する目的で、ジ・メチル・フォルム・アミド(DMF)を溶剤として混合したものである。DMF溶液には、凝固後のウレタンの強度を高める目的で、カーボン・ペーストやエポキシ樹脂、ポリ塩化ビニル樹脂等を混合することがある。 The DMF solution of urethane resin is a mixture of dimethyl form amide (DMF) as a solvent for the purpose of reducing the viscosity of the urethane resin. The DMF solution may be mixed with carbon paste, epoxy resin, polyvinyl chloride resin, or the like for the purpose of increasing the strength of the urethane after solidification.
上記のように、ウレタン樹脂のコーティング層2を有する基材層1は、凝固液中に水没させる。すると、凝固液と、ウレタン樹脂の溶液に含まれる溶剤とが置換し、ウレタン樹脂のコーティング層2は基材層1上で凝固する(湿式凝固)。凝固したコーティング層2の内部には、図4の(B)に示すように、涙滴状のポア3が多数形成されている。
As described above, the base material layer 1 having the urethane
こののち、残留する溶剤を温水等で洗浄除去し、乾燥させるが、ウレタン樹脂のコーティング層2の表面には、ポア3を覆うようにスキン層2aが形成されているため、このスキン層2aをバフ加工により研削除去し、図4の(C)に示すような、ポア3が表面側に開口している層(ナップ層)4を形成する。
After that, the remaining solvent is removed by washing with warm water or the like, and dried. Since the
上記の研磨布では、ナップ層4の開口したポア3内に保持された研磨剤が、被研磨物であるウエハとポア3の内面との間で作用することにより、研磨が進行し、ダメージのない研磨面が得られる。
In the above polishing cloth, the polishing agent held in the
ところで、上記の研磨布は、研磨装置に貼り付けた直後は、研磨布として全くその性能を発揮せず、その時点のウエハの表面状態を観察すると、微小欠陥やヘイズの測定値は、測定装置の測定上限を超えるほど悪い。しかし、−定時間のダミーラン(仮の研磨、予備的な研磨)を経た後は、微小欠陥やヘイズが低い値を示すようになり、繰り返し仕上げ研磨を実施しても、安定して所期の性能を発揮するようになり、実際のウエハの生産に使用可能となる。
現行の仕上げ研磨用の研磨布の問題点は、ダミーランと呼ばれる、研磨布の立ち上げ処理を必要とすることである。 The problem with the current polishing cloth for final polishing is that it requires a polishing cloth startup process called a dummy run.
仕上げ研磨用研磨布の立ち上げ処理に要する時間は、通常30分間程度であるが、長い場合は、4時間以上かかる場合もある。同一種類の研磨布であっても、ロット内およびロット間でも立ち上げ処理時間にばらつきがあり、こうした研磨布をウエハの生産に安定して使用する場合、種々の研磨布が存在することを考慮して、4時間程度の立ち上げ処理を全ての研磨布に対して行う。 The time required for the start-up treatment of the polishing cloth for finish polishing is usually about 30 minutes, but in some cases it may take 4 hours or more. Even with the same type of polishing cloth, the start-up processing time varies between lots and between lots. Considering the existence of various polishing cloths when these polishing cloths are used stably for wafer production Then, the start-up process for about 4 hours is performed on all the polishing cloths.
しかし、仕上げ研磨用研磨布の寿命は、24〜48時間程度であるため、研磨布の寿命に対して5−15%程度の立ち上げ処理時間を要することになる。これでは無駄が多く、その間は、製品となるウエハの仕上げ研磨ができないため、生産性が悪い。 However, since the life of the polishing cloth for finish polishing is about 24 to 48 hours, a startup process time of about 5-15% is required for the life of the polishing cloth. This is wasteful, and during that time, the final polishing of the wafer as a product cannot be performed, so that productivity is poor.
本件の発明者が検討したところ、研磨布の立ち上げ処理時間の不均一性は、各研磨布の部分的な厚さのばらつきによると推定される。こうした研磨布は、20〜30μm程度の厚さのばらつきを持っているのが普通で、この厚さのばらつきは、仕上げ研磨においてウエハ表面と研磨布表面との間で圧力の不均一性を作る。不均一な圧力分布では、仕上げ研磨工程にて要求される微小欠陥やヘイズの低減はできない。研磨布に所期の性能を発揮させるためには、研磨布表面とウエハ表面とが均一な圧力分布状態にて接触することが必要となる。 As a result of examination by the inventors of the present case, it is estimated that the non-uniformity of the polishing cloth start-up processing time is due to a partial thickness variation of each polishing cloth. Such polishing cloths usually have a thickness variation of about 20 to 30 μm, and this thickness variation creates a pressure non-uniformity between the wafer surface and the polishing cloth surface in finish polishing. . With non-uniform pressure distribution, it is not possible to reduce micro defects and haze required in the finish polishing process. In order for the polishing cloth to exhibit the desired performance, it is necessary that the polishing cloth surface and the wafer surface are in contact with each other in a uniform pressure distribution state.
これに対しては、研磨布の部分的な厚さのばらつきを無くせばよいのであるが、厚さのばらつきのない研磨布を製作することは、現実には無理である。そのため、従来は、立ち上げ処理、すなわちダミーランにより、その不均一な圧力分布を解消しようとしているのであるが、短時間の立ち上げ処理では、研磨布の回復力が強いため、ウエハとの間で均一な圧力分布にはならない。 For this, it is only necessary to eliminate the variation in the thickness of the polishing cloth, but it is impossible in reality to manufacture a polishing cloth having no variation in thickness. Therefore, conventionally, the non-uniform pressure distribution is attempted to be resolved by the start-up process, that is, the dummy run. The pressure distribution is not uniform.
そこで、本発明の課題は、研磨布の立ち上げ処理に要する時間を、できるだけ短縮化して、ウエハの生産性を高めることである。 Therefore, an object of the present invention is to shorten the time required for the polishing cloth start-up process as much as possible to increase the productivity of the wafer.
本件発明者は、研磨布に部分的に厚さのばらつきがあっても、ダミーランにより、全体の厚さが均一化して所期の性能を発揮するようになることに着目して、各種の実験を行った結果、以下の構成を想到するに至った。 The inventor paid attention to the fact that, even if the polishing cloth has a partial thickness variation, the dummy run makes the entire thickness uniform and exhibits the desired performance. As a result, the following configuration has been conceived.
すなわち、本発明による仕上げ研磨用研磨布は、合成樹脂繊維の不織布にウレタン樹脂を含浸させてなる基材層に、別途ウレタン樹脂をコーティングして表面側に開口した涙滴状のポアを有するナップ層を形成した仕上げ研磨用研磨布において、
該研磨布が、300g/cm2の面圧をかけて30秒間圧縮し、その後30秒間圧縮を解除し、この圧縮と圧縮解除とを20分間繰り返す条件で繰り返し圧縮を加えた場合に、該研磨布全体の初期厚さからの厚さ変化量が15μm以上、50μm以下となるものであることを特徴とするものである。
That is, the polishing cloth for finish polishing according to the present invention is a nap having a teardrop-shaped pore opened on the surface side by separately coating a urethane resin on a base material layer obtained by impregnating a nonwoven fabric of synthetic resin fibers with a urethane resin. In the polishing cloth for finishing polishing in which a layer is formed,
The polishing cloth, when compressed for 30 seconds by applying a surface pressure of 300 g / cm 2, to release the subsequent compression for 30 seconds, and the repeated compression added under conditions repeating the decompression and the
上記構成によれば、不織布の素材や、基材層の厚さにかかわらず、上記研磨布の繰り返し圧縮をかけた場合の研磨布全体の厚さ変化量が、15μm以上である場合は、立ち上げ処理に要する時間が、従来の研磨布での立ち上げ処理時間より短い、20分という短時間で済ませることができる。
これは、繰り返し圧縮により厚さ変化量が大きい研磨布が、立ち上げ処理の際、早期に平坦化して各部の厚さのばらつきが少なくなるため、と考えられる。 厚さ変化量が50μmを越える場合は、研磨布に対するウエハの沈み込み量が多くなり、ウエハの周辺部分での研磨量が多くなる、いわゆる外周ダレが発生するので、好ましくない。
According to the above structure, and non-woven materials, regardless of the thickness of the substrate layer, when the thickness variation of the entire polishing cloth when subjected to repeated compression of the polishing cloth is 15μm or more, Standing The time required for the lifting process can be as short as 20 minutes, which is shorter than the startup process time with a conventional polishing cloth.
This is presumably because the polishing cloth having a large amount of change in thickness due to repeated compression is flattened early during the start-up process, and the variation in the thickness of each part is reduced. When the thickness change amount exceeds 50 μm, the amount of sinking of the wafer with respect to the polishing cloth increases, and the amount of polishing at the peripheral portion of the wafer increases.
上記構成の研磨布において、研磨布全体の厚さ変化量の多少は、主として基材層の厚さによると考えられ、基材層の厚さは、1.2mm超、2.0mm以下であることが望ましい。 In the polishing cloth having the above configuration, the amount of change in the thickness of the entire polishing cloth is considered to be mainly due to the thickness of the base material layer, and the thickness of the base material layer is more than 1.2 mm and not more than 2.0 mm. It is desirable.
基材層の厚さが1.2mm超、2.0mm以下である場合は、研磨布全体の繰り返し圧縮による厚さ変化量が15μm以上、50μm以下の範囲内に収まり、立ち上げ処理を20分以内に済ませることができる。 When the thickness of the base material layer is more than 1.2 mm and 2.0 mm or less, the thickness change amount due to repeated compression of the entire polishing cloth is within the range of 15 μm or more and 50 μm or less, and the start-up treatment is performed for 20 minutes. Can be done within.
従来の仕上げ研磨用研磨布では、基材層にポリエステルの不織布を使用するが、本発明では、基材層の不織布がナイロン製であることが望ましい。 In the conventional polishing cloth for final polishing, a polyester nonwoven fabric is used for the base material layer. In the present invention, the nonwoven fabric of the base material layer is preferably made of nylon.
基材層の不織布にナイロン繊維を使用した場合、研磨布の圧力を吸収する特性が強化され、研磨布を繰り返し圧縮した場合の厚さ変化量も大きくなり、それに応じて、立ち上げ処理に要する時間が短くなる。 When nylon fiber is used for the nonwoven fabric of the base material layer, the characteristics of absorbing the pressure of the polishing cloth are strengthened, and the amount of change in thickness when the polishing cloth is repeatedly compressed increases, and accordingly, the startup process is required. Time is shortened.
また、ナイロンは、ポリエステルに比べて親水性が高いため、仕上げ研磨工程にて使用されるスラリーが研磨中に浸透した場合、基材層が柔軟になり、繰り返し圧縮による厚さ変化量が大きくなるので、好ましい。 In addition, since nylon is more hydrophilic than polyester, if the slurry used in the final polishing process penetrates during polishing, the base material layer becomes flexible and the amount of change in thickness due to repeated compression increases. Therefore, it is preferable.
上記の不織布に使用するナイロン繊維は、5デニール以下の細さのものが好ましい。5デニールを上回る繊維太さでは、繊維の強度が増し、繰り返し圧縮した場合、研磨布としての回復力が強くなってしまう。 Nylon fibers used for the nonwoven fabric are preferably those having a fineness of 5 denier or less. When the fiber thickness exceeds 5 denier, the strength of the fiber increases, and when it is repeatedly compressed, the resilience as an abrasive cloth becomes strong.
本発明によれば、立ち上げ処理の時間を20分以下と、従来より一段と短くすることができる。 According to the present invention, the start-up processing time can be further shortened to 20 minutes or less, compared with the prior art.
本実施形態では、図4に示したようなスエードタイプの仕上げ研磨用の研磨布、具体的には、ポリエステル等の合成樹脂繊維の不織布にウレタン樹脂を含浸させてなる基材層1に、別途ウレタン樹脂をコーティングして表面側に開口した涙滴状のポア3を有するナップ層4を形成した仕上げ研磨用研磨布を多数用意し、それぞれに所定の条件で繰り返し圧縮を加えて、その厚さ変化量を測定した。そののち、各研磨布で実際にウエハの仕上げ研磨を行い、ウエハの表面状態を測定し、繰り返し圧縮による厚さ変化量と立ち上げ処理に要する時間との関係を調べた。
In the present embodiment, a suede-type polishing cloth for final polishing as shown in FIG. 4, specifically, a base material layer 1 formed by impregnating a non-woven fabric of synthetic resin fibers such as polyester with a urethane resin is separately provided. Prepare a number of polishing cloths for finishing polishing, which are coated with urethane resin and have a
その結果、繰り返し圧縮をかけた場合の初期厚さからの厚さ変化量が、15μm以上、50μm以下であれば、立ち上げ処理に要する時間が、従来の研磨布での立ち上げ処理時間より短い、20分という短時間で済み、しかも、外周ダレのような不具合を発生せず支障なくウエハの仕上げ研磨が行えることを見出した。 As a result, when the amount of change in thickness from the initial thickness when repeated compression is applied is 15 μm or more and 50 μm or less, the time required for the start-up process is shorter than the start-up process time of the conventional polishing cloth. It has been found that a short time of 20 minutes is required, and that the wafer can be polished without trouble without causing problems such as sagging of the outer periphery.
基材層1の厚さが異なるものについては、基材層1の厚さが1.2mm超、2.0mm以下である場合は、研磨布全体の繰り返し圧縮による厚さ変化量が15μm以上、50μm以下となり、立ち上げ処理を20分以内に済ませることができ、しかも支障なくウエハの仕上げ研磨が行えることを見出した。 For those having different thicknesses of the base material layer 1, when the thickness of the base material layer 1 is more than 1.2 mm and 2.0 mm or less, the amount of change in thickness due to repeated compression of the entire polishing cloth is 15 μm or more, It has been found that the thickness is 50 μm or less, the start-up process can be completed within 20 minutes, and the wafer can be polished without hindrance.
基材層1に含まれる不織布がナイロン製である場合、ポリエステル製不織布よりも、繰り返し圧縮による厚さ変化量が大きく、立ち上げ処理の時間がより短くなることを見出した。不織布のナイロンの繊維太さについては、5デニール以下である場合、研磨布全体の繰り返し圧縮による厚さ変化量が15μm以上、50μm以下となり、立ち上げ処理を20分以内に済ませることを見出した。 When the nonwoven fabric contained in the base material layer 1 is made of nylon, it has been found that the amount of change in thickness due to repeated compression is larger than that of the nonwoven fabric made of polyester, and the time for the start-up process is shorter. It has been found that when the nylon fiber thickness of the nonwoven fabric is 5 denier or less, the thickness change amount by repeated compression of the entire polishing cloth is 15 μm or more and 50 μm or less, and the start-up treatment can be completed within 20 minutes.
(実施例1)
ポリエステル不織布にウレタン樹脂を含浸させてなる厚さ1.1mmの基材層1に、別途ウレタン樹脂をコーティングして表面側に開口した涙滴状のポア3を有するナップ層4を形成して仕上げ研磨用研磨布を造った。ナップ層4の厚さは550μmで、したがって全体の厚さは1.65mmである。
Example 1
Finished by forming a
上記の研磨布を多数用意し、繰り返し圧縮測定機により、研磨布に所定の条件で繰り返し圧縮をかけ、その後、繰り返し圧縮による厚さ変化量を測定した。 A large number of the above-mentioned abrasive cloths were prepared, and the compression cloth was repeatedly compressed under predetermined conditions by a repeated compression measuring machine, and then the amount of change in thickness due to repeated compression was measured.
(繰り返し圧縮の条件)
・温度:常温(25℃)
・面圧:300g/cm2
・圧縮時間:30秒間
・圧縮解除時間:30秒間
・繰り返し時間:20分間
要するに、30秒間の圧縮と、30秒間の圧縮解除とを20分間、繰り返したのち、研磨布の厚さ変位量を測定した。測定前には、面圧300g/cm2で数分間プレ荷重をおこなった。
(Conditions for repeated compression)
・ Temperature: normal temperature (25 ℃)
・ Surface pressure: 300 g / cm 2
・ Compression time: 30 seconds ・ Uncompression time: 30 seconds ・ Repetition time: 20 minutes In short, after 30 seconds of compression and 30 seconds of compression are repeated for 20 minutes, the thickness displacement of the polishing cloth is measured. did. Before the measurement, a preload was performed for several minutes at a surface pressure of 300 g / cm 2 .
その測定の結果、同じ構造の研磨布であっても、繰り返し圧縮による厚さ変化量にはかなりのばらつきがあった。全14点の試料のうち、厚さ変化量が10μm未満のものが1点、10μm以上20μm未満のものが9点、20μm以上30μm未満のものが1点、30μm以上40μm未満のものが1点、40μm以上50μm以下のものが2点であった。 As a result of the measurement, there was considerable variation in the amount of change in thickness due to repeated compression even with the polishing cloth having the same structure. Of the 14 samples, 1 sample has a thickness variation of less than 10 μm, 9 samples have a thickness of 10 μm or more but less than 20 μm, 1 sample has a thickness variation of 20 μm or more but less than 30 μm, and 1 sample has a thickness variation of 30 μm or more but less than 40 μm. 40 μm or more and 50 μm or less were two points.
次いで、二次研磨上がりのウエハを多数枚用意しておいて、これに対して上記の試料である各研磨布を用いて、実際に仕上げ研磨を行い、5分毎に、ウエハ検査装置でウエハの表面状態を観察し、立ち上げ処理が完了するまでの時間、具体的には、ウエハ表面においてヘイズの値が0.04ppmを下回るまでの時間を測定した。 Next, a number of secondary polished wafers are prepared, and the final polishing is actually performed on each of the above polishing cloths, which are the above samples, and the wafer is inspected by the wafer inspection apparatus every 5 minutes. The time until the start-up process was completed, specifically, the time until the haze value fell below 0.04 ppm on the wafer surface was measured.
(仕上げ研磨の条件)
・pH:無制御
・スラリー:ロデール・ニッタ株式会社製NP8020
・研磨機:ロデール・ニッタ株式会社製研磨機RN20”
・プラテン速度:115rpm
・スラリー流速:300ml/分
・加圧力:100gf/cm2
(ウエハ検査)
・ウエハ検査装置:日立電子エンジニアリング(株)製,LS6600。
(Finishing polishing conditions)
・ PH: Uncontrolled ・ Slurry: NP8020 manufactured by Rodel Nitta Co., Ltd.
・ Polisher: Polisher RN20 "manufactured by Rodel Nitta Co., Ltd.
・ Platen speed: 115rpm
・ Slurry flow rate: 300 ml / min ・ Pressure force: 100 gf / cm 2
(Wafer inspection)
-Wafer inspection device: LS6600, manufactured by Hitachi Electronics Engineering Co., Ltd.
その測定結果を、各研磨布の繰り返し圧縮による厚さ変化量と関係付けて示したのが、図1のグラフである。図1では、横軸に厚さ変化量(μm)、縦軸に立ち上げ処理時間(分)をとり、測定点を黒四角で示している。 The measurement result is shown in the graph of FIG. 1 in relation to the amount of change in thickness due to repeated compression of each polishing cloth. In FIG. 1, the horizontal axis represents the thickness change amount (μm), the vertical axis represents the startup processing time (minutes), and the measurement points are indicated by black squares.
図1に図示の測定結果からは、研磨布の厚さ変化量が大きいほど、立ち上げ処理に要する時間が短く、厚さ変化量が15μm以上の場合は、立ち上げ処理時間が、従来の研磨布での立ち上げ処理時間より短い、20分以内と短いことが分かる。 From the measurement results shown in FIG. 1, the larger the thickness change amount of the polishing cloth, the shorter the time required for the start-up process. When the thickness change amount is 15 μm or more, the start-up process time It can be seen that it is shorter than 20 minutes, which is shorter than the start-up processing time with the cloth.
なお、厚さ変化量が50μmを越える場合は、ウエハの周辺部分での研磨量が多くなる、いわゆる外周ダレが発生するので、好ましくない。 If the thickness change amount exceeds 50 μm, the amount of polishing at the peripheral portion of the wafer increases, so-called peripheral sagging occurs, which is not preferable.
上記結果は、特定のスエードタイプの研磨布、すなわち、ポリエステル不織布にウレタン樹脂を含浸させてなる基材層1(厚さ1.1mm)に、ウレタン樹脂のナップ層4(厚さ550μm)を形成した仕上げ研磨用研磨布について言えることであるが、厚さの異なる基材層1を有するスエードタイプの研磨布についての実験(後述する実施例2)や、他の合成樹脂繊維の不織布を含むスエードタイプの研磨布についての実験(実施例3)の結果と合わせ考慮すると、スエードタイプの研磨布の一般について、繰り返し圧縮による厚さ変化量が15μm以上、50μmである場合は、立ち上げ処理を短い時間内に済ますことができて、しかも、外周ダレのような不具合が生じない、ということができる。 As a result, a urethane resin nap layer 4 (thickness 550 μm) is formed on a base material layer 1 (thickness 1.1 mm) obtained by impregnating a specific suede type polishing cloth, that is, a polyester nonwoven fabric with urethane resin. As for the finished polishing cloth for finishing polishing, an experiment on a suede type polishing cloth having a base material layer 1 having a different thickness (Example 2 to be described later) and a suede containing a nonwoven fabric of other synthetic resin fibers In consideration of the result of the experiment on the type of polishing cloth (Example 3), when the thickness change amount due to repeated compression is 15 μm or more and 50 μm in general for the suede type polishing cloth, the start-up process is short. It can be completed in time, and it can be said that there is no problem such as a peripheral sag.
(実施例2)
ポリエステル不織布にウレタン樹脂を含浸させた基材層1について、その厚さを1.1mm〜2.1mmの範囲で異ならしめてスエードタイプの仕上げ研磨布を製作し、これら研磨布の繰り返し圧縮による厚さ変化量と、立ち上げ処理時間を測定した。基材層1には、別途ウレタン樹脂がコーティングされてナップ層4が形成されている。ナップ層4の厚さは一定(550μm)である。繰り返し圧縮の条件、厚さ変化量の測定条件、立ち上げ処理時間の測定の仕方は、実施例1と同じである。
(Example 2)
About the base material layer 1 which impregnated the polyester resin nonwoven fabric with the urethane resin, the thickness is varied in the range of 1.1 mm to 2.1 mm to produce a suede type finish polishing cloth, and the thickness of these polishing cloths by repeated compression The amount of change and the start-up processing time were measured. The base material layer 1 is separately coated with a urethane resin to form a
その測定結果を図2のグラフに示す。同グラフでは、基材層1の厚さと、繰り返し圧縮による厚さ変化量との関係を、白四角の測定点で示している。また、基材層1の厚さと、立ち上げ処理時間との関係を、黒四角の測定点で示している。 The measurement results are shown in the graph of FIG. In the graph, the relationship between the thickness of the base material layer 1 and the amount of change in thickness due to repeated compression is indicated by white square measurement points. Moreover, the relationship between the thickness of the base material layer 1 and the start-up processing time is indicated by black square measurement points.
グラフに示す結果では、1.1mmから2.1mmへと基材層1の厚さを増すごとに、研磨布全体の繰り返し圧縮による厚さ変化量が増加し、基材層1の厚さが1.2mm超、2.0mm以下である場合は、繰り返し圧縮による厚さ変化量が15μm以上、50μm以下となり、立ち上げ処理に要する時間がほぼ20分以下となることが分かる。 In the results shown in the graph, each time the thickness of the base material layer 1 is increased from 1.1 mm to 2.1 mm, the amount of change in thickness due to repeated compression of the entire polishing cloth increases, and the thickness of the base material layer 1 is reduced. When the thickness is more than 1.2 mm and not more than 2.0 mm, the thickness change amount by repeated compression is 15 μm or more and 50 μm or less, and the time required for the start-up process is almost 20 minutes or less.
立ち上げ処理時間の長さのほか、材料コスト考慮すると、基材層1の厚さは、1.3mm〜1.5mmの範囲がより望ましい。なお、基材層1の厚さを1.1mm未満とした場合は、基材層1の強度が極端に低くなり、ウレタン樹脂をその上部にコーティングすることが困難となる。 In consideration of the material cost in addition to the length of the start-up processing time, the thickness of the base material layer 1 is more preferably in the range of 1.3 mm to 1.5 mm. In addition, when the thickness of the base material layer 1 is less than 1.1 mm, the strength of the base material layer 1 becomes extremely low, and it becomes difficult to coat the urethane resin on the top.
(実施例3)
基材層1に含まれる不織布としてポリエステル製の不織布と、繊維太さ1〜6デニールのナイロン製の不織布を使用し、スエードタイプの仕上げ研磨布を試作した。基材層1の厚さは、何れも1.1mmとした。基材層1には、別途ウレタン樹脂がコーティングされてナップ層4が形成されている。ナップ層4の厚さは一定(550μm)である。
(Example 3)
A non-woven fabric made of polyester and a non-woven fabric made of nylon having a fiber thickness of 1 to 6 denier were used as the non-woven fabric contained in the base material layer 1, and a suede-type finished polishing cloth was prototyped. The thickness of the base material layer 1 was 1.1 mm in all cases. The base material layer 1 is separately coated with a urethane resin to form a
これら研磨布について、繰り返し圧縮による厚さ変化量と、立ち上げ処理時間を測定した。繰り返し圧縮の条件、厚さ変化量の測定条件、立ち上げ処理時間の測定の仕方は、実施例1と同じである。 For these polishing cloths, the amount of change in thickness due to repeated compression and the start-up treatment time were measured. The conditions for repeated compression, the measurement conditions for the amount of change in thickness, and the method for measuring the start-up processing time are the same as in the first embodiment.
その測定結果を図3のグラフに示す。同グラフでは、基材層1の厚さと、繰り返し圧縮による厚さ変化量との関係を、白四角の測定点で示している。また、基材層1の厚さと、立ち上げ処理時間との関係を、黒四角の測定点で示している。 The measurement results are shown in the graph of FIG. In the graph, the relationship between the thickness of the base material layer 1 and the amount of change in thickness due to repeated compression is indicated by white square measurement points. Moreover, the relationship between the thickness of the base material layer 1 and the start-up processing time is indicated by black square measurement points.
グラフに示す結果では、基材層1の不織布繊維としては、ナイロンを用いた場合、ポリエステルを用いた場合より、繰り返し圧縮による厚さ変化量が大きく、それに伴い、立ち上げ処理時間も大きく低減されている。これは、ナイロンがポリエステルに比べてより高い親水性を有していて、スラリーの浸透により、基材層1が柔軟になるため、と考えられる。 In the results shown in the graph, as the nonwoven fabric fiber of the base material layer 1, when nylon is used, the thickness change amount by repeated compression is larger than when polyester is used, and accordingly, the start-up processing time is greatly reduced. ing. This is presumably because nylon has higher hydrophilicity than polyester, and the base material layer 1 becomes flexible due to the penetration of the slurry.
同じナイロン製の不織布では、5デニールより細い繊維のものでは、立ち上げ処理時間が20分以下となることが分かる。5デニールを上回る繊維太さでは、繊維の強度が増し、研磨布として圧縮に対する回復力が強く、各部の厚さのばらつきが解消されない、と考えられる。 It can be seen that the same nylon non-woven fabric with a fiber finer than 5 denier has a start-up treatment time of 20 minutes or less. When the fiber thickness exceeds 5 deniers, it is considered that the strength of the fibers is increased, the resilience to compression is strong as an abrasive cloth, and the variation in thickness of each part is not eliminated.
1 基材層
2 コーティング層
3 ポア
4 ナップ層
1
Claims (4)
該研磨布が、300g/cm2の面圧をかけて30秒間圧縮し、その後30秒間圧縮を解除し、この圧縮と圧縮解除とを20分間繰り返す条件で繰り返し圧縮を加えた場合に、該研磨布全体の初期厚さからの厚さ変化量が15μm以上、50μm以下となるものであることを特徴とする仕上げ研磨用研磨布。 In the polishing cloth for finishing polishing in which a base layer formed by impregnating a synthetic resin fiber nonwoven fabric with urethane resin is coated with urethane resin separately to form a nap layer having teardrop-shaped pores opened on the surface side,
The polishing cloth, when compressed for 30 seconds by applying a surface pressure of 300 g / cm 2, to release the subsequent compression for 30 seconds, and the repeated compression added under conditions repeating the decompression and the compression 20 min, the polishing the thickness variation from the initial thickness of the entire fabric 15μm or more, the final polishing abrasive cloth, characterized in that it is made with 50μm or less.
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JP6247254B2 (en) * | 2015-07-10 | 2017-12-13 | ポバール興業株式会社 | Polishing pad and manufacturing method thereof |
JP6935214B2 (en) * | 2017-03-30 | 2021-09-15 | 富士紡ホールディングス株式会社 | Abrasive pad |
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JP2004087521A (en) * | 2002-08-22 | 2004-03-18 | Sumitomo Mitsubishi Silicon Corp | One-side mirror surface wafer and its manufacturing method |
JP2004140215A (en) * | 2002-10-18 | 2004-05-13 | Toyobo Co Ltd | Polishing pad and manufacturing method thereof |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102672598A (en) * | 2012-05-22 | 2012-09-19 | 上海宏力半导体制造有限公司 | Grinding pad using method and wafer grinding method |
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