JP4605208B2 - Magnetoresistive element and magnetic memory device - Google Patents

Description

  The present invention relates to a magnetic memory device capable of writing data by spin polarization injection and a magnetoresistive effect element applied to the magnetic memory device.

  With the rapid increase in computers and communication devices, non-volatile memory devices that are faster in operation, smaller in size, and have no restrictions on the number of reads and writes are being developed. A wide variety of random access memories (RAM) are being developed. Proposed.

  For example, one of them is a RAM based on a magnetic effect, which uses a spin valve (or giant magnetoresistive effect: GMR) (spin valve RAM), and uses a spin-dependent tunnel effect (SDT). (SDT-RAM) and the like are known.

  RAMs (magnetic RAM memories) based on these magnetic effects all use a magnetic field generated in the space around the current in order to change the magnetization state in the storage layer, such as semiconductor memories and ferroelectric memories. Compared to the above, there are advantages such as that the device structure and its assembly are easy, and that a complete nondestructive writing / reading cycle can be realized without deterioration of material quality as a result of the writing operation. Have.

  Although the magnetic RAM memory has many advantages as described above, it is not without problems.

  For example, in spin valve RAM, each memory cell must be connected to a separate word (write) and sense current line, for example, if each line connects cells in series, wire connections at four or more locations are required. is necessary.

  In the spin valve RAM, adjacent cells are affected by the write pulse current. When the cell density is high, if a pulse current is passed to a given write cell, the adjacent cell overlaps the magnetic field generated by this, and the magnetic field of the cell approaching about half the magnitude of the write magnetic field. Affects the condition.

The ferromagnetic material that makes up the free layer of the spin valve RAM must have a coercivity that is strong enough to overcome this during a write operation, and taking this into account, the cell dimensions ( Therefore, the limit value of the recording density is largely determined by the magnitude of the write current. The write current creates a magnetic field that linearly depends on its magnitude, assuming that the minimum limit of coercivity of the ferromagnetic material is 10 Oersted and the upper limit of the current density in the metal is 10 ⁸ A / cm ^2. The maximum recording density is about 10 ⁹ cells per square inch. This upper limit is not an essential limitation on the spin valve RAM, but rather is estimated as a basis for comparison.

  On the other hand, in the SDT-RAM, the insulating layer separating the ferromagnetic layers must be free from pinhole defects. Formation of such a high-quality insulating spacer layer is very difficult even at the laboratory level, and it is not difficult to imagine that a large problem will arise when considering mass production of devices.

  In addition, as with the spin valve RAM, switching of the magnetization state requires a contact excitation line (magnetic field generating conductor), but since the device has a high resistance, writing is performed with a magnetic field generated by the current flowing through the readout wiring, that is, Spin switching is not possible. The high resistance of SDT-RAM is advantageous for high read voltage levels, but has a poor signal-to-noise ratio and high power loss.

  It is an object of the present invention to provide a novel memory device that can eliminate the drawbacks of these conventional magnetic RAM memories, greatly increase the storage density, and shorten the reading time and power consumption. And

To achieve the above object, a magnetoresistive effect element of the present invention, first the orientation of the magnetization is fixed ferromagnetic layer, a spacer layer, the magnetization direction memory state second to be switched comprising a ferromagnetic layer and the ferromagnetic layer are sequentially laminated, a magnetoresistance effect element which is designed so that a current flows in the direction perpendicular to the film surface of the ferromagnetic layer, the magnetoresistive element, memory state is switched by the electronic injection of spin-polarized, the plane dimension of the magnetoresistive element, ranges der of 0.5 nm ² 5 .mu.m ² is, paramagnetic metal layer and the second ferromagnetic layer A magnetization pinned layer made of an antiferromagnetic metal material is formed in contact with a surface opposite to the surface of the first ferromagnetic layer on which the spacer layer is stacked. and said that you are.

Further, in order to achieve the object described above, a magnetic memory device of the present invention includes a first ferromagnetic layer the direction of magnetization is fixed, a spacer layer and the second the memory state is switched by the direction of magnetization ferromagnetic layer and sequentially laminated magnetoresistive element current in the vertical direction is designed to flow in a magnetoresistive element film surface of the ferromagnetic layer having a ferromagnetic layer formed are arranged in a magnetic memory device comprising Te, the Symbol magnetoresistive element, memory state is switched by injecting electrons spin-polarized in-plane dimensions of the magnetoresistive element, of 0.5 nm ² 5 .mu.m ² range der is, together with the paramagnetic metal layer are laminated on the second ferromagnetic layer, the magnetization fixed layer of an antiferromagnetic metal material, the spacer layer of the first ferromagnetic layer What is the surface where Characterized in that it is formed in contact with the surface of the pair.

  The memory device of the present invention is based on the propagation theory of spin-polarized electron current as a new technology for storing information in a magnetic memory cell.

  The memory device of the present invention can be assembled with an array of mesoscopic multilayer metal devices, where the memory state in each cell is two stable magnetizations in the plane of the ferromagnetic film switching layer (second ferromagnetic layer). Corresponds to one of the orientations.

  These states can be switched by injecting a spin-polarized electron stream into the memory cell.

  Also, binary information is read by monitoring the cell magnetoresistance using a pulse current having an amplitude less than or equal to the switching threshold.

  Magnetic recording media used in disk-based storage systems employ information densities close to 50 gigabits per square inch, and are expected to result in average plane bit dimensions on the order of 100 nm. However, in the present invention, it is possible to achieve an information density comparable to this with a chip-based magnetic storage structure.

  Thin film deposition technology allows the creation of cell structures with so-called sub-micron patterns and thicknesses that span atomic dimensions, but the control of magnetization in these dimensional ranges is a classic for magnetism. It is necessary to consider the phenomenon that bridges both expression and quantum mechanical expression.

  This bridging can be found in the theoretical explanation of the mechanism of excitation by current in the magnetic multilayer film.

  In this theoretical explanation, it is predicted that the flow of electrons flowing perpendicularly to the film surface of the ferromagnetic thin film separated by the paramagnetic layer is spin-polarized, and the spin angular momentum is transmitted to each ferromagnetic layer. Thereby, the flow of electrons induces a change in the direction of macroscopic magnetization in the ferromagnetic layer.

  This mechanism is termed spin conversion and is derived from the consideration of interlayer torque resulting from the interaction of moments of localized electronic states in ferromagnets in conjunction with spin currents carried by itinerant electrons.

  According to the present invention, it is possible to provide a novel memory device that can eliminate the disadvantages of the conventional magnetic RAM memory, can greatly increase the storage density, and can shorten the reading time and power consumption. Is possible.

  Furthermore, according to the present invention, it is possible to provide a memory device that is much easier to manufacture than a semiconductor memory, an SDT-RAM, or the like.

  Hereinafter, the configuration of a memory device to which the present invention is applied will be described in detail with reference to the drawings.

  In the memory device of the present invention, as shown in FIG. 1, memory cells 1 having a format in which a memory state is rewritten by injection of an electron current whose spin state is spin-polarized are arranged in a matrix (for example, an array of N columns N rows: N × N Arrayed), thereby forming an integrated circuit.

  For example, as shown in FIG. 2, each memory cell 1 has a basic structure in which a spacer layer 13 is sandwiched between a fixed layer 11 that is a first ferromagnetic layer and a free layer 12 that is a second ferromagnetic layer. Above and below, paramagnetic metal layers 14 and 15 are laminated as electrodes.

  The magnetization direction of the fixed layer 11 is fixed in a predetermined direction, while the magnetization direction of the free layer 12 is rotated by a spin-polarized electron flow. Then, by switching the direction of magnetization of the free layer 12, two memory states are achieved, which can be read out as a 1, 0 signal.

  There are two types of memory cell addressing schemes. The simplest scheme is a scheme using one dedicated write line 2 for one memory cell 1 as shown in FIG.

  Alternatively, as shown in FIG. 4, a so-called xy addressing system is adopted in which the memory cells 1 are placed at the intersections of the two-dimensional grid-like wirings 3 and 4 and addressed by a combination of signals to the vertical and horizontal wirings 3 and 4. It is also possible.

  The material of each layer constituting the memory cell 1 is described above. First, the material of the spacer layer 13 and the paramagnetic metal layers 14 and 15 are not necessarily the same. For example, the spacer layer 13 may be selected from metals that are advantageous for electron polarization, and the paramagnetic metal layers 14 and 15 may be selected from metals that can be easily formed by vapor deposition or sputtering.

  Specifically, the spacer layer 13 can be made of non-antiferromagnetic 3d metal or 4d metal such as Ag or Au. The spacer layer 13 must be suitable for polarizing electrons. This is achieved by closely matching the paramagnetic Fermi vector to the minority or majority spin band of the ferromagnetic layer. For a ferromagnetic layer composed of an alloy of 3d transition metals, the majority spin band substantially matches the Ag band. In addition to 3d and 4d column paramagnetic materials, Au has been shown to be effective as a polarization layer material in making spin diodes with permalloy.

  Also, relatively light metals such as Li, Na, Mg, K, and Ca that have s-electron conduction can be used. In particular, Li, Ca, and Nb are suitable for matching with the 3d multiple spin band. Furthermore, it is possible to use an antiferromagnetic metal such as Cr and Mn. When Co is used for the ferromagnetic layer (the fixed layer 11 and the free layer 12), Ru is also preferable from the viewpoint of lattice matching. is there.

  The spacer layer 13 is preferably thinner than the spin coherence length, and the practical thickness range is 0.5 nm to 5 μm.

  On the other hand, for the fixed layer 11 and the free layer 12, ferromagnetic materials are used. However, when these are made of the same material, it is preferable to select from the following.

Simple substance: (110) Orientation bcc Fe
(001) Orientation bcc Fe
C-axis in-plane orientation hcp Co
(111) Orientation fcc Co
(110) Orientation fcc Co
(001) Orientation fcc Co
Binary alloy: Fe _1-x Co _x (0 <x <1)
Ni _x Fe _1-x (0 <x <0.75)
Ni ₇₉ Fe ₂₁ (Perlomy alloy)
Ternary alloy: MnFeCo
FeCoNi

  When the fixed layer 11 and the free layer 12 are not the same material, if a material having a Gilbert damping coefficient much larger than that of the free layer 12 is selected for the fixed layer 11, it is not necessary to provide a magnetization fixed layer described later.

  Alternatively, the magnetization fixed layer can be omitted by making the uniaxial magnetic anisotropy of the fixed layer 11 larger than that of the free layer 12. The uniaxial magnetic anisotropy is adjusted depending on the composition and shape.

  Regarding the omission of the magnetization fixed layer, the magnetization fixed layer can be omitted by making the fixed layer 11 thicker than the free layer 12.

  Furthermore, by selecting different current polarization efficiencies between the fixed layer 11 and the free layer 12, the write current and write time required for writing in the memory state 0 → 1 and 1 → 0 are set to different values. can do. Such an asymmetry of the write current has an advantage in circuit configuration, for example, a polarity that requires a low current per cell when all cells on the chip are simultaneously cleared can be selected.

  Further, a Heusler alloy such as PtMnSb or a metalloid material can be used as the polarized electron source of the fixed layer 11 and the free layer 12.

  The magnetization of the pinned layer 11 is pinned, where electron polarization maximizes exchange splitting in the ferromagnetic body while minimizing the reflection of many spin electrons at the paramagnetic / ferromagnetic interface. Is achieved.

  On the other hand, the polarization in the ferromagnet follows the trend of the Slater-Paul curve (ie, the average moment per atom is proportional to the exchange splitting).

  An effective ferromagnetic material for obtaining high polarization is a FeCo-rich FeCo alloy. The itinerant d-electrons of the 3d ferromagnet have a nearly isotropic and free-electron wave vector, thus allowing flexibility in the selection of the crystal orientation of the ferromagnet.

  Further, since the magnetization direction of the ferromagnetic material constituting the switchable free layer 12 is two stable directions, uniaxial anisotropy is given in the film. This can be achieved by controlling the orientation and lattice strain of the ferromagnetic crystal, or by depositing a ferromagnetic film in the presence of a bias magnetic field.

  At this time, a small value of the uniaxial anisotropy Hu is convenient for switching the magnetization state of the free layer 12, but the CPP voltage measurement of such a system requires delicate experimental conditions. Therefore, a memory cell made of a material having too small uniaxial anisotropy Hu is not suitable as a practical device.

  The polarization efficiencies of some ferromagnetic thin films having uniaxial anisotropy are as follows.

(110) bcc iron magnetized along the easy magnetization axis direction ([001] direction) determined by the magnetocrystalline anisotropy (high polarization efficiency, high Hu)
Permalloy deposited in the presence of a bias magnetic field and given uniaxial induced magnetic anisotropy parallel to the magnetic field (optimal polarization efficiency, small Hu)
-Hcp cobalt with high uniaxial anisotropy in the in-plane c-axis direction (high polarization efficiency, large Hu)
An Fe1-x Cox alloy having a bcc structure by Co substitution at x% of Fe lattice sites. The film surface is (110) and has an easy axis of in-plane uniaxial magnetic anisotropy in the [100] direction. (Highest polarization efficiency, large Hu)
In order to efficiently polarize the current, a combination of a ferromagnetic material used for the fixed layer 11 and the free layer 12 and a paramagnetic material (nonmagnetic material) used for the spacer layer 13 is important. Examples of suitable combinations are shown below.

a. Paramagnetic Cr / ferromagnetic Fe
Both are lattice-matched by bcc, and the Fe minority spin band is well connected to the Cr band.

b. Paramagnetic Au / ferromagnetic Fe
When the (001) -oriented fcc-Au and bcc-Fe are laminated so as to have an in-plane orientation relationship in which the <100> axis forms 45 °, the epitaxial growth is good.

c. Paramagnetic Ag / ferromagnetic Fe
Same as above

d. Paramagnetic Cu / ferromagnetic Co
When both are fcc and epitaxially grown, the majority spin band of Co is well connected to the Cu band.

e. Paramagnetic Ru / ferromagnetic Co
Both are epitaxially grown by hcp. When grown in an orientation having the c-axis in the plane, uniaxial anisotropy is obtained in the plane.

  In order to keep the magnetization state of the fixed layer 11 constant, the selection of the material as described above may be employed, but the magnetization fixed layer may be formed in contact with the fixed layer 11. The magnetization fixed layer is formed of an antiferromagnetic material, and the magnetic moment of the fixed layer 11 is pinned by the magnetization fixed layer, so that the magnetization state is kept constant.

  At this time, if a metal is used as the antiferromagnetic material constituting the magnetization fixed layer, it can be used instead of the paramagnetic metal layer 14 by forming it.

  Examples of the antiferromagnetic metal material constituting the pinned layer magnetization pinned layer include FeMn, IrMn, NiMn, RhMn, CrMnPt, and FeMnPt. NiMn is preferred because it provides about 650 oersteds).

  On the other hand, in order for the magnetization direction (memory state) of the free layer 12 to remain stable without fluctuating due to fluctuations in heat or magnetic field, the cell shape, composition, deposition method, etc. are optimized and the anisotropic magnetic field Hu> 100. It is preferable to provide the free layer 12 with uniaxial anisotropy of (Oe).

  In the case of a design in which the magnetization switches in the plane of the free layer 12 (changes direction), the anisotropic magnetic field Hu can be optimized by a strip-shaped aspect ratio with a short side of 1 μm or less.

  When switching the magnetization between the in-plane direction and the direction perpendicular to the film surface, the thickness of the free layer 12 should be 5 atomic layers or less in order to obtain sufficient perpendicular magnetic anisotropy. Is preferred. Specifically, the free layer 12 is preferably about 1 nm thick. This is a transition region between the in-plane magnetization film and the perpendicular magnetization film.

  The paramagnetic metal layers 14 and 15 are portions to be electrodes, and any paramagnetic metal having conductivity can be used. The thickness depends on wire bonding and patterning technology.

The in-plane dimension of the memory cell 1 is preferably in the range of 0.5 nm ^{2 to 5} μm ^{2 in} order to suppress the influence of the magnetic field generated by the write current.

  In the memory cell 1 described above, as shown in FIGS. 5 and 6, writing to the free layer 12 is performed using a pulse current that serves to determine the direction of magnetization switching (magnetization reversal).

  For example, writing from parallel magnetization matching to antiparallel magnetization matching is started by an electron particle density pulse Jp flowing from the free layer 12 toward the fixed layer 11 as shown in FIG. At this time, the current density pulse Je (current I) flows in the opposite direction.

  The magnitude of the switching current I is larger than the critical value Jt in the junction region A. By continuing the pulse in nanosecond units, the magnetization direction of the free layer 12 is reversed and parallel magnetization matching is achieved in the initial state. However, at the end of writing, the magnetization directions of the fixed layer 11 and the free layer 12 are reversed, and an antiparallel magnetization matching state is obtained.

  The writing from antiparallel magnetization matching to parallel magnetization matching is the same, but the flow of electrons and the direction of current are reversed as shown in FIG. That is, in this example, the electron particle density pulse Jp flows from the fixed layer 11 toward the free layer 12, and the current density pulse Je (current I) flows toward the fixed layer 11.

  Reading can be realized, for example, by using a giant magnetoresistance effect (GMR) in a memory cell 1 in which a current flows perpendicularly to each layer (CPP).

  7 and 8 illustrate the principle of reading. In this example, as shown in FIG. 7, when a read current pulse having a critical value Jt or less is applied to the parallel magnetization matching state, a low voltage pulse Vlow corresponding to logic “0” is obtained.

  Conversely, as shown in FIG. 8, when a read current pulse having a critical value Jt or less is applied to the antiparallel magnetization matching state, a high voltage pulse Vhigh corresponding to logic “1” is obtained.

When such a reading method is adopted, in order to obtain a GMR ratio (ΔR / R) of 5% or more that is convenient for reading, the fixed layer 11 and the free layer 12 have their respective polarizations Pol ₁ and Pol _2. It is preferable to use those satisfying the following formula 1.

  Further, the method of reading the memory state is not limited to this, and for example, a method of examining the magnetization method of the free layer 12 using the magnetic Kerr effect instead of the magnetoresistive effect can be used.

  As the address system of the memory cell 1, there are a system using a dedicated write line as described above and a so-called xy address system.

  At this time, in the address system having a dedicated write line, the connection required for one cell is two places in the paramagnetic metal layer 15 in addition to the ground electrode (paramagnetic metal layer 14), and the pseudo 4-terminal measurement is performed. I do. Of course, there may be a case where a two-terminal measurement in which one paramagnetic metal layer 14 and 15 is connected is sufficient.

  In the xy address system, a write memory cell can be selected if a current exceeding the write critical current flows only when pulses are simultaneously applied to both the x and y wires 3 and 4.

  At this time, in order to ensure the coincidence of pulses in the target write memory cell, a long pulse is given to one of the x-rays or the y-line (for example, the x-rays) and a short pulse is given to the other (y-line). You may make it give.

  The above is the schematic configuration of the memory device of the present invention. In this memory device, for example, a circuit for amplifying a read signal is incorporated in order to operate other circuits according to the memory state read result and perform a logical operation. It can also be a memory chip.

In the memory device described above, since the magnetization is switched by injection of a spin current rather than by application of a magnetic field from the outside, there is no interference between the cells. Therefore, when the maximum memory density is calculated based on the in-plane device dimensions of 100 nm on a side, 10 ¹¹ cells / in 2 which is 100 times or more that of spin valve RAM or SDT-RAM can be expected.

  Further, when compared with a semiconductor memory, it has an advantage over a semiconductor memory in that it can withstand temperature fluctuations, operates at a high power density, and can achieve high heat dissipation. In addition, the number of steps for manufacturing can be significantly reduced as compared with a semiconductor memory.

  Further, when compared with SDT-RAM, there is a great advantage in manufacturing in that it is not necessary to create a thin film insulating tunnel barrier.

  Next, specific examples in which a memory device is actually manufactured will be described.

  In this embodiment, first, as shown in FIGS. 9 and 10, a polished, cleaned and oxidized Si substrate 21 is prepared, and an Au film 22 having a thickness of 0.5 μm is formed in a central 2 cm × 2 cm region. A film was formed by vapor deposition.

  The Si substrate 21 is not doped and has an outer diameter of 4 inches and a thickness of 0.01 inches. In addition, the Si substrate 21 was previously carved with diamond points before the deposition of the Au film 22 so that the processed region (Au film 22 formation region) could be cut out.

  Next, as shown in FIG. 11, a resist layer 23 was formed on the Au film 22 and patterned according to the shape of the memory cell. At this time, the thickness of the resist layer 23 was 50 nm or more.

  Next, as shown in FIG. 12, a first ferromagnetic layer 24 serving as a fixed layer, an Au film 25 serving as a paramagnetic spacer, a second ferromagnetic layer 26 serving as a free layer, and an Au film 27 serving as an electrode are formed. Films were formed sequentially by vapor deposition.

The first ferromagnetic layer 24 is a permalloy film having a composition of Ni ₈₁ Fe ₁₉ and has a thickness of 4 nm.

  During film formation, uniaxial magnetic anisotropy was induced in the presence of a magnetic field of 100 oersted.

  The Au film 25 has a thickness of 20 nm and maintained a magnetic field during film formation.

  The second ferromagnetic layer 26 is a permalloy film having a thickness of 1 nm, and was formed while applying a magnetic field similar to the magnetic field applied when forming the first ferromagnetic layer 24.

  Thereby, uniaxial magnetic anisotropy was induced in the second ferromagnetic layer 26 so that the c-axis line of the second ferromagnetic layer 26 and the magnetization of the first ferromagnetic layer 25 were parallel.

  The Au film 27 finally deposited has a thickness of 25 nm, and the film formation of the multilayer film 28 constituting the memory cell was completed.

  After the multilayer film was formed, as shown in FIG. 13, the previously formed resist layer 23 was dissolved and removed, and the multilayer film formed thereon was lifted off and patterned.

  By this lift-off, a portion 28a corresponding to the memory cell and a portion 28b used as a ground terminal of the multilayer film 28 were left. The patterning state is shown in FIG.

  Next, as shown in FIG. 15, an insulating layer 29 made of polymethyl methacrylate was formed so as to cover a portion 28 a corresponding to the memory cell of the multilayer film 28 and a portion 28 b used as a ground terminal.

  The insulating layer 29 has a thickness of 60 nm and functions as a planarizing film.

  Further, as shown in FIG. 16, the portion 28a corresponding to the memory cell of the multilayer film 28 and the portion 28b used as a ground terminal were exposed by oxygen plasma etching.

  Thereafter, a photoresist layer 30 was formed covering the portion 28b used as the ground terminal.

  This photoresist layer 30 has a thickness of 0.2 μm, covers only the portion 28b used as a ground terminal, and is patterned so that the portion 28a corresponding to the memory cell is exposed as shown in FIG.

  Further, as shown in FIG. 18, an Au film 31 having a thickness was formed thereon, and as shown in FIG. 19, the photoresist layer 30 was dissolved and removed to lift off. The remaining shape of the Au film 31 by this patterning is shown in FIG.

  The remaining Au film 31 serves as one electrical contact of the memory cell and is electrically connected to the Au film 27 serving as an electrode.

  Further, by dissolving and removing the photoresist layer 30, the portion 28b used as the ground terminal is exposed. This portion 28b is the other electrode, that is, the Au film 22 serving as the electrode of the first ferromagnetic layer 24. And are electrically connected.

  Finally, as shown in FIG. 21, wires 32 and 33 for voltage signals and wires 34 and 35 for current pulses are bonded to these electrical contacts (the Au film 27 and the portion 28b used as a ground terminal). The memory device was completed by adhering to a Cu heat sink.

  The characteristics of the manufactured memory device were measured. The results are shown below.

<Calculated value>
Polarization efficiency: ~ 30%
In-plane effective anisotropic magnetic field for the free layer: Hu = + 2 Ku / Ms to 10 Oe
Spin number density: ˜1.9 × 10 ¹⁵ cm ²
Gilbert damping coefficient: ~ 0.01
Critical value Jt: ˜8 × 10 ³ A / cm ²
Electrical resistance: ~ 16mΩ
Noise voltage (10Hz Bw, 77k): ~ 0.3nV
<Measured value>
Experimental switching current density: ˜2 × 10 ⁴ A / cm ²
Switching time θ (0 to π): ˜0.1 μsec Peak power consumption during reading: ˜0.1 pW
Read current density: ˜4 × 10 ³ A / cm ²
Read current pulse: 6.4 μA, 1 Hz
CPP GMR 5% ΔR / R: ~ (800μΩ / 16mΩ)
Average reading voltage: ~ 5nV
As mentioned above, although the specific Example to which this invention is applied has been demonstrated, it cannot be overemphasized that this invention is not limited to this Example.

1 is a perspective view schematically showing a schematic configuration of a memory device to which the present invention is applied. It is a perspective view which shows the structural example of a memory cell typically. It is a perspective view which shows typically the connection state of the exclusive writing line to a memory cell. It is a perspective view which shows typically the wiring state of an xy address system. It is a schematic diagram showing a write operation from parallel magnetization matching to antiparallel magnetization matching. It is a schematic diagram showing a write operation from antiparallel magnetization matching to parallel magnetization matching. It is a schematic diagram which shows the read-out signal in a parallel magnetization matching state. It is a schematic diagram which shows the read-out signal in an antiparallel magnetization matching state. FIG. 3 is a schematic plan view showing a manufacturing process of a memory cell according to a process order and showing a film formation state of an Au film on a Si substrate. It is a schematic sectional drawing which shows the film-forming state of Au film | membrane to Si substrate. It is a schematic sectional drawing which shows the formation process of a resist layer. It is a schematic sectional drawing which shows the film-forming process of a multilayer film. It is a schematic sectional drawing which shows the lift-off process of a multilayer film. It is a schematic plan view which shows the pattern shape of the multilayer film which remains by lift-off. It is a schematic sectional drawing which shows the formation process of an insulating film. It is a schematic sectional drawing which shows the etching process of an insulating film. It is a schematic sectional drawing which shows the formation process of a photoresist layer. It is a schematic sectional drawing which shows the film-forming process of Au film | membrane. It is a schematic perspective view which shows the lift-off process of Au film | membrane. It is a schematic plan view which shows the pattern shape after lift-off. It is a schematic sectional drawing which shows typically the connection process of the wire to an electrical contact.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 Memory cell, 11 Fixed layer, 12 Free layer, 13 Spacer layer, 14, 15 Paramagnetic metal layer

Claims (8)

It comprises a first ferromagnetic layer in which the direction of magnetization is fixed, and the spacer layer, a ferromagnetic layer and a second ferromagnetic layer memory state is switched, which are sequentially laminated by a magnetization direction, the strong A magnetoresistive element designed to allow current to flow in a direction perpendicular to the film surface of the magnetic layer,
The magnetoresistive element, memory state is switched by injecting electrons spin-polarized in-plane dimensions of the magnetoresistive element, Ri range der of 0.5 nm ² 5 .mu.m ^2,
A paramagnetic metal layer is laminated on the second ferromagnetic layer, and a magnetization fixed layer made of an antiferromagnetic metal material is laminated on the spacer layer of the first ferromagnetic layer. A magnetoresistive effect element formed in contact with a surface opposite to the surface . The magnetoresistive element according to claim 1, wherein the antiferromagnetic metal material is NiMn. The thickness of the first ferromagnetic layer magnetoresistive element Ah Ru claim 1, wherein at greater than the thickness of the second ferromagnetic layer. The magnetoresistive element of the second thickness of the ferromagnetic layer is Ru der than 5 atomic layers according to claim 1. A first ferromagnetic layer in which the direction of magnetization is fixed, a magnetic resistance with a spacer layer, a ferromagnetic layer and a second ferromagnetic layer memory state is switched, which are sequentially stacked by the direction of magnetization a effect device a magnetic memory device magnetoresistive element formed by sequences designed to current flow in the direction perpendicular to the film surface of the ferromagnetic layer,
The Symbol magnetoresistive element, memory state is switched by injecting electrons spin-polarized in-plane dimensions of the magnetoresistive element, Ri range der of 0.5 nm ² 5 .mu.m ^2,
A paramagnetic metal layer is laminated on the second ferromagnetic layer, and a magnetization fixed layer made of an antiferromagnetic metal material is laminated on the spacer layer of the first ferromagnetic layer. A magnetic memory device formed in contact with a surface opposite to the surface . 6. The magnetic memory device according to claim 5, wherein the antiferromagnetic metal material is NiMn. The first ferromagnetic layer magnetic memory device of Ah Ru claim 5, wherein at greater thickness than the thickness of the second ferromagnetic layer. It said second ferromagnetic layer magnetic memory device having a thickness of Ru der than 5 atomic layer according to claim 5, wherein the.

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