JP4602380B2 - Image input method using storage type sensor and apparatus therefor - Google Patents

Description

  The present invention relates to an image input method and apparatus using a storage type sensor (hereinafter referred to as a TDI sensor).

  As a one-dimensional image sensor used for image input of an optical image, there are various sensors such as a CCD linear sensor, a CMOS linear sensor, and a TDI (Time Delay and Integration) sensor. Among these, the TDI sensor is used as an image sensor suitable for speeding up image input since it has excellent sensitivity characteristics (see, for example, Patent Document 1). As shown in FIG. 7, the main part of the TDI sensor 10 includes a plurality of one-dimensional pixel rows 11 for capturing an image, a vertical transfer register 12 arranged between the one-dimensional pixel rows 11, and the one-dimensional pixel. The horizontal transfer register 13 is arranged in parallel with the last stage of the pixel column 11. Here, in the one-dimensional pixel row 11, for example, a photodiode is used as a light receiving unit, and pixels each having several thousand pixels are arranged in one horizontal line. The one-dimensional pixel array 11 is arranged in several lines to several hundred lines, and has a vertical accumulation stage number. In this way, the plurality of one-dimensional pixel rows 11 form a pixel group arranged in the vertical and horizontal directions.

  The vertical transfer register 12 is composed of a CCD (Charge Coupled Device) shift register, and the (imaging) charge of the image received and photoelectrically converted by the one-dimensional pixel array 11 is the accumulation stage direction (hereinafter referred to as the TDI direction) which is the vertical direction. ) Is transferred by, for example, a four-phase vertical transfer clock (Vclk1, Vclk2, Vclk3, and Vclk4), and charges of the same optical image are integrated. The horizontal transfer register 13 is similarly composed of a CCD shift register, reads out the accumulated electric charges accumulated in the TDI direction via a transfer gate adjacent to the last stage of the one-dimensional pixel column 11, and outputs an output amplifier 14 of the sensor output unit. The accumulated charges accumulated in the order of arrangement of the pixels in the line direction of the one-dimensional pixel row 11 are transferred to the side by, for example, a three-phase horizontal transfer clock (Hclk1, Hclk2, and Hclk3).

  The accumulated charge transferred by the horizontal transfer register 13 is output as a digital signal from the output gate and the charge detection section through the output amplifier 14 and output to the output circuit. Here, the sensor output unit includes the output gate, the charge detection unit, the output amplifier 14, and an output circuit. The charge of the image received and photoelectrically converted by the one-dimensional pixel array 11 may be output to the output amplifier 14a side of the sensor output unit. In this case, the charge of the image is transferred and accumulated in the TDI direction opposite to that described above. Then, the horizontal transfer register 13a transfers the charges accumulated in the reverse direction toward the read output amplifier 14a. Here, the drive switching on the output amplifier 14 side or the output amplifier 14a side can be freely performed by the switching mechanism of the sensor output unit.

  The feature of the TDI sensor 10 is that the charges obtained by the pixels in the line direction are transferred while being accumulated in the TDI direction by the vertical transfer register 12, so that charges corresponding to the number of accumulation stages can be integrated. The TDI sensor can improve the sensitivity of the input image to the number of storage stages by the charge storage effect for the number of storage stages.

  Here, the TDI sensor 10 transfers the charges photoelectrically converted by the pixels of the light receiving unit by one stage, that is, one pixel in the TDI direction by the vertical transfer register 12 for each scan synchronization signal described later. For each scan synchronization signal, the accumulated charge is transferred from the one-dimensional pixel column 11 at the final stage to the horizontal transfer register 13 via the transfer gate, and 1 is serially transferred from the sensor output unit 14 by the charge transfer of the horizontal transfer register 13. The sensor output regarding the image imaged in the line direction of the dimension pixel row 11 is read.

  Since the TDI sensor 10 has high sensitivity as described above, it is frequently used as a one-dimensional image sensor for defect inspection, for example, in the manufacture of semiconductor integrated circuits. Here, an optical image relating to an original pattern (also referred to as a mask, a photomask or a reticle) on which a fine semiconductor element pattern formed on a semiconductor substrate or a circuit pattern transferred in a photolithography process is formed by the TDI sensor 10. Capture and input image.

  FIG. 8 schematically shows a method of actually inputting an L / S (line / space) pattern image of the subject 15 by the TDI sensor 10. As shown in FIG. 8, the illumination light 16 is irradiated onto the subject 15 by the illumination optical system including the light source, and the L / S pattern of the subject image is formed on the light receiving surface of the TDI sensor 10 by the magnifying optical system 17. The L / S pattern images are continuously captured and input while moving the subject 15 on the stage or the like in the subject moving direction that is the same direction as the TDI direction described above. Here, in the prior art, the TDI sensor 10 is fixed together with the illumination optical system.

  When inputting an image, the moving speed of the subject 15 in the moving direction of the subject, that is, the moving speed of the image of the L / S pattern formed on the light receiving surface of the TDI sensor 10 is accurately matched with the transfer speed of the accumulated charge in the TDI direction. Thus, the TDI sensor 10 accumulates charges photoelectrically converted from images of the same pattern that are always the same optical image. For this reason, it is necessary to accurately match the speed at which the image of the L / S pattern on the sensor light receiving surface moves in the TDI direction with the charge transfer speed in the TDI direction in the TDI sensor 10.

  Therefore, as shown in FIG. 9, a scan synchronization signal of the TDI sensor 10 is output from the TDI synchronization control circuit 18 based on the L / S pattern, that is, the position information of the subject 15, and the vertical transfer clock is output by the sensor drive circuit 19 accordingly. (Vclk1, Vclk2, Vclk3, and Vclk4) are generated. As described above, the accumulated charges are transferred in the TDI direction in the charge transfer region of the semiconductor surface of the TDI sensor 10, for example. Here, the moving speed of the subject 15 in the subject moving direction and the transfer speed of charges in the TDI direction are controlled to be the same. The accumulated charge obtained by photoelectric conversion and integration from the L / S pattern image 20 formed on the light receiving surface of the TDI sensor 10 is transferred from the transfer gate to the horizontal transfer shift register 13 (or 13a) for each scan synchronization signal. And output as a digital signal from the output amplifier 14 (or 14a) via the sensor output I / F 21 and the A / D conversion circuit 22 of the output circuit.

  Here, the L / S pattern image 20 that forms an image on the TDI sensor 10 and the accumulated charges that are transferred while being converted and accumulated by photoelectric conversion are controlled so as to always have the same relative positional relationship. It is preferable that the electric charge photoelectrically converted in a certain one-dimensional pixel column 11 is read out by accumulating the number of accumulation stages in the TDI direction.

  By the way, as shown in FIG. 10, the driving method of the TDI sensor 10 transfers charges by a distance corresponding to the number of storage stages during a certain transfer time (ΔT), and turns on the transfer gate to turn on the transfer gate, for example 3 The horizontal transfer clock Hclk of the phase clocks (Hclk1, Hclk2, and Hclk3) is driven to read the sensor output. FIG. 10 shows an example of a timing chart of a transfer clock for driving the TDI sensor 10. As shown in FIG. 10, the vertical transfer clocks (Vclk1, Vclk2) having a four-phase clock waveform as shown in FIG. , Vclk3 and Vclk4) are applied, and the charge is transferred in the TDI direction by one storage stage during the transfer time (ΔT). Then, the transfer gate arranged between the last one-dimensional pixel column 11 and the horizontal transfer register 13 is turned on in synchronization with the scan clock, and the horizontal transfer clock Hclk of the horizontal transfer register 13 is driven, thereby The sensor output in the line direction composed of the pixel columns 11 is sequentially read from the sensor output unit.

  Since the TDI sensor 10 is driven in such a manner that the vertical transfer clock is driven within the transfer time (ΔT) shown in FIG. 10, when the sensor output is read by the horizontal transfer clock, the vertical transfer clock is changed to the sensor read signal. Noise due to incoming crosstalk can be suppressed. However, since the charge transfer in the TDI direction is performed within a certain transfer time (ΔT), when viewed within the number of storage stages, even if the vertical transfer of charge is stopped, it is connected to the TDI sensor. The image of the subject to be imaged moves continuously, and the relative position of the accumulated charge transferred in the TDI direction and the charge newly input after photoelectric conversion is slightly shifted.

  FIG. 11 is a conceptual diagram showing the deviation of the relative position between the charge newly input by photoelectric conversion and the accumulated charge transferred in the TDI direction with respect to the charge transfer timing in the TDI direction. Here, the vertical axis represents the deviation amount in units of pixels, and the horizontal axis represents the number of scan synchronization signals described above as a scan cycle. In the relative position deviation amount, the deviation corresponding to a maximum of one pixel corresponding to one stage in the TDI direction before the transfer time (ΔT) becomes zero after the transfer time (ΔT), and the beginning of the transfer time (Δt). That is, at the beginning of the transfer, a positional deviation of about one pixel, which is the maximum deviation amount, occurs.

As described above, the image obtained by the TDI sensor 10 is input while the deviation in the TDI direction varies between 0 and almost one pixel, and the L / S pitch of the L / S pattern is the pixel size. In the case where it becomes very fine, such as about 10 times or less, the resolution performance in the TDI direction of the L / S pattern by the TDI sensor 10 is problematic.
JP-A-8-9258

  The present invention has been made in view of the circumstances as described above, and an object of the present invention is to determine the relative position between the charge newly input by photoelectric conversion and the accumulated charge transferred in the TDI direction in the TDI sensor. The purpose is to easily reduce the deviation. It is another object of the present invention to provide an image input method and apparatus for improving the resolution performance in the TDI direction of an optical image picked up in image input using a TDI sensor.

In order to achieve the above object, an image input method using a storage type sensor according to a first aspect of the present invention has a plurality of pixels arranged in the vertical and horizontal directions, and the respective charges photoelectrically converted by these pixels in the vertical direction. The vertical transfer register that transfers while accumulating, the horizontal transfer register that transfers the accumulated charge transferred from the last stage of the vertical transfer register in parallel in the horizontal direction, and the charge transferred by the horizontal transfer register An image input method using a storage type sensor having a sensor output unit that outputs a readout digital signal, wherein the position of the storage type sensor is periodically set to one pixel in accordance with the charge transfer timing in the vertical transfer register. The image is input by reciprocating a corresponding distance .

The image input device according to the second invention comprises a vertical transfer register in which a plurality of pixels are arranged in the vertical and horizontal directions, and the electric charges photoelectrically converted by these pixels are transferred while being accumulated in the vertical direction, and the vertical transfer register. A horizontal transfer register for transferring the accumulated charges transferred from the final stage of the transfer register in parallel in the horizontal direction; and a sensor output unit for reading out the charges transferred by the horizontal transfer register and outputting them as digital signals. An image input device using a storage type sensor, wherein a sensor position moving means for periodically reciprocating the position of the storage type sensor by a distance corresponding to one pixel in accordance with a charge transfer timing in the vertical transfer register. It has a configuration that is equipped.

  According to the present invention, in the image input using the TDI sensor, the deviation of the relative position between the charge newly input by the photoelectric conversion and the accumulated charge transferred in the TDI direction is easily reduced, and the optical image to be captured The resolution performance in the TDI direction is improved.

  A preferred embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a schematic configuration diagram illustrating an example of an image input apparatus using a TDI sensor 10. FIG. 2 is a conceptual diagram showing the deviation of the relative position between the charge newly input by photoelectric conversion and the accumulated charge transferred in the TDI direction with respect to the charge transfer timing in the TDI direction. FIG. 3 is a plan view showing the movement of the position of the TDI sensor 10 for canceling out the relative position deviation. Hereinafter, parts that are the same or similar to each other are denoted by common reference numerals, and a duplicate description is partially omitted.

  First, the image input apparatus according to the present embodiment will be described. As shown in FIG. 1, the image input device 30 using the TDI sensor 10 described above has, as its characteristic main part, the TDI sensor 10, the support substrate 31, which is fixedly placed on the support substrate 31. A TDI sensor moving mechanism 32 that periodically moves the TDI sensor 10 and a TDI sensor movement control circuit 33 that controls the sensor movement driving unit 32 are provided. In addition, a TDI synchronization control circuit 18, a sensor drive circuit 19, a sensor output I / F 21, and an A / D conversion circuit 22 as described with reference to FIG. 9 are provided.

  Here, the support substrate 31 is made of, for example, an insulating material or a conductive material, and holds the TDI sensor 10. The TDI sensor moving mechanism 32 includes, for example, a piezo element and the like, and drives the piezo element by a voltage signal that is a position control signal from the TDI sensor movement control circuit 33 so that the support substrate 31 is moved at a predetermined cycle. The position is moved. This position movement is the TDI direction in which the charges of the pixels are integrated in the TDI sensor 10, that is, the subject movement direction of the subject 15 shown in FIG. 7, and the movement width is in accordance with the charge transfer timing as will be described later. The measurement is performed to be several μm to several tens of μm corresponding to the width of one pixel of the sensor in the TDI direction. Here, the TDI sensor moving mechanism 32, the TDI sensor movement control circuit 33, and the like constitute sensor position moving means in the present embodiment.

  The TDI sensor movement control circuit 33 supplies a position control signal to the TDI sensor movement mechanism 32 based on an electrical signal synchronized with the vertical / horizontal transfer clock for transferring the charge generated from the sensor drive circuit 19. Here, the sensor drive circuit 19 reads out the vertical transfer clock serving as the transfer clock in the TDI direction and the sensor output in synchronization with the scan clock generated by the TDI synchronization control circuit 18 based on the subject position information as described above. Generate a horizontal transfer clock. In this way, the TDI sensor moving mechanism 32 controls and moves the position of the TDI sensor 10 in accordance with the charge transfer timing.

  As described above, the accumulated charge obtained by photoelectrically converting and integrating the subject image in the TDI sensor 10 is read from the transfer gate to the horizontal transfer shift register 13 (or 13a) for each scan clock, and output amplifier 14 (or 14a) is output as a digital signal via the sensor output I / F 21 and the A / D conversion circuit 22 of the output circuit.

  In the image input device 30, the TDI moving mechanism 32 may include an electromagnet instead of the piezo element.

  As described above, when inputting a subject image by the TDI sensor 10, it is necessary to input the image by accurately matching the charge transfer speed in the TDI direction and the speed at which the subject image moves on the TDI sensor 10. However, as described above, the transfer of charges in the TDI direction is performed within a certain transfer time, and therefore, the maximum deviation of the relative position between the charge newly input by photoelectric conversion and the charge accumulated in the TDI direction is one pixel. It will be about a minute.

  Therefore, in the image input method of the present embodiment, for example, the image input apparatus 30 controls and moves the position of the TDI sensor 10 in the TDI direction in accordance with the timing of the scan clock, whereby the charge transfer in the TDI direction of the TDI sensor 10 is performed. The deviation of the relative position between the electric charge newly input by photoelectric conversion and the accumulated electric charge transferred in the TDI direction caused by the operation is canceled.

  In driving the TDI sensor 10 in the present embodiment, for example, a four-phase vertical transfer clock (Vclk1, Vclk2, Vclk3, and Vclk4) and a horizontal transfer clock Hclk as shown in FIG. 10 are used. In this case, as described in the related art, the deviation amount of the relative position varies between 0 and almost one pixel with respect to the transfer timing in the TDI direction shown in FIG. Here, in FIG. 2, the vertical axis indicates the above-described relative position deviation amount in units of pixels, and the horizontal axis indicates the number of scan synchronization signals as a scan cycle.

  Therefore, for example, the TDI sensor moving mechanism 32 shown in FIG. 1 moves the position of the TDI sensor 10 in the TDI direction in accordance with the charge transfer timing, and the deviation of the relative position in the TDI sensor 10 caused by the charge transfer timing in the TDI direction is calculated. Control to cancel. For example, when the charge transfer timing in the TDI direction is FIG. 10, the relative position deviation is as shown in FIG. 2, and in order to cancel this deviation, for example, as shown in FIG. To move continuously.

That is, as shown in FIG. 3A, the position of the TDI sensor 10 in the TDI direction is set to zero as the reference position after the transfer time indicated by the circle A shown in FIG. Then, when to be approximately 0.5 pixels of the deviation amount ○ mark B of the relative positions of the TDI sensor 10, TDI sensor 10 is [Delta] L _B for example 0.5 TDI direction as shown in FIG. 3 (B) The position is moved by the pixel. Similarly, where the deviation amount of the relative positions of the TDI sensor 10 is about 1.0 pixels ○ mark C, [Delta] L _B for example 1 to the TDI sensor 10 is TDI direction as shown in Figure 3 (C). The position is moved by 0 pixels. The position movement of the TDI sensor 10 between the circles A, B and C is increased in proportion to the deviation amount, for example. In the circle A ′, as described above, the deviation amount of the relative position of the accumulated charge at the transfer timing in the TDI direction becomes zero, so that the TDI sensor 10 is returned to the reference position again.

  As described above, the amount of movement of the position of the TDI sensor 10 in the TDI direction is periodically controlled in accordance with the timing of the scan clock, whereby the charge newly input by photoelectric conversion with respect to the charge transfer timing in the TDI direction. The deviation of the relative position of the accumulated charges transferred in the TDI direction can be reduced very simply.

  In FIG. 4, by the movement of the position of the TDI sensor 10 in the TDI direction described with reference to FIGS. 2 and 3, the charge newly input by photoelectric conversion and the TDI direction are transferred in the TDI direction with respect to the charge transfer timing in the TDI direction. It is a conceptual diagram which shows a mode that the deviation of the relative position of the stored electric charge which decreases is reduced. As shown in FIG. 4, since the charge transfer in the TDI direction in the prior art is performed within a certain transfer time, the relative position between the charge newly input by photoelectric conversion and the charge accumulated in the TDI direction is shown. The maximum deviation is about one pixel. On the other hand, by controlling the movement of the TDI sensor 10 in the TDI direction in accordance with the charge transfer timing as described above, the deviation amount can be greatly reduced, for example, can be reduced to about 0.2 pixels at the maximum. . In this way, the deviation amount of the relative position of the accumulated charge in the TDI direction can be ideally canceled and zeroed by the movement of the TDI sensor 10 in the TDI direction. However, in the actual case, a slight deviation remains due to the control accuracy in the position movement of the TDI sensor 11 as described above.

  Next, the effect in this embodiment is further demonstrated with reference to FIG. 5 and FIG. 5 and 6 are MTF (Modulation Transfer Function) characteristic diagrams showing the resolution performance of the pattern optical image in the TDI direction. Here, FIG. 5 is a simulation result when the deviation amount in the present embodiment is 0.2 pixels, and FIG. 6 is a simulation when the deviation amount of the related art shown as a comparative example is 1.0 pixel. It is a result. In the horizontal axis of these figures, the L / S pitch of the L / S pattern described in FIG. 8 is taken in pixel units, and the L / S pattern becomes finer as the value approaches 0 side. S pitch becomes fine. The vertical axis of these figures is the MTF value. When the value is 1, the resolution performance is the highest, and when the MTF value is decreased, the resolution performance decreases and the image blur increases.

  In the case of the present embodiment, as shown in FIG. 5, it can be seen that the MTF does not decrease to 95% even when the pitch of L / S becomes two pixels corresponding to the Nyquist frequency. On the other hand, in the case of the conventional TDI sensor driving method shown as a comparison in FIG. 6, the MTF decreases to 95% when the L / S pitch is about 6 pixels. As described above, in this embodiment, it is apparent that the resolution in the TDI direction of the pattern optical image is significantly improved as compared with the conventional technique.

  In the present embodiment, the deviation of the relative position between the charge newly input by photoelectric conversion and the accumulated charge transferred in the TDI direction, which is generated by the charge transfer timing in the TDI direction of the TDI sensor 10, is adjusted to the TDI timing. By controlling the position of the sensor 10 in the TDI direction and periodically moving it, the sensor 10 can be reduced very simply and with high accuracy. In this way, the resolution performance of the optical image in the TDI direction by the TDI sensor is improved, and it becomes easy to input an image of a fine pattern of the subject.

  Although the preferred embodiments of the present invention have been described above, the above-described embodiments do not limit the present invention. Those skilled in the art can make various modifications and changes in specific embodiments without departing from the technical idea and technical scope of the present invention.

  For example, the horizontal transfer register 13 of the TDI sensor 10 reads the accumulated charge from each half pixel in the line direction of the one-dimensional pixel column 11 and the remaining half pixels in the line direction of the one-dimensional pixel column 11. It is also possible to divide the stored charge into portions that read out the stored charges, and to drive them with different horizontal transfer clocks.

  The horizontal transfer register of the TDI sensor 10 may be composed of a plurality of horizontal transfer registers arranged in parallel with each other. In this case, the accumulated charges from the pixels in the line direction of the one-dimensional pixel row 11 can be read in parallel, and a fine pattern image input by the TDI sensor can be performed at higher speed.

  Further, since the position movement of the TDI sensor only needs to cancel the deviation of the relative position between the charge newly input by photoelectric conversion in the drive of the TDI sensor and the accumulated charge transferred in the TDI direction. There may be a case where the direction is not the TDI direction as described in the embodiment but the opposite direction.

  In the above embodiment, the case of a four-phase vertical transfer clock or a three-phase horizontal transfer clock has been described as an example. However, these charge transfer clocks are not limited to this.

  In the image input apparatus using the TDI sensor, the description of the parts that are not directly necessary for the description of the present invention is omitted, but the required apparatus configuration, signal processing method, control method, etc. are appropriately selected. Can be used.

1 is a schematic configuration diagram showing an example of an image input device using a storage type sensor according to an embodiment of the present invention. The deviation of the relative position of the charge newly input by the photoelectric conversion in the storage type sensor and the storage charge transferred in the direction of the storage stage is provided to explain the position movement of the storage type sensor according to the embodiment of the present invention. Conceptual diagram. The top view which shows the position movement of the accumulation type sensor concerning embodiment of this invention. The conceptual diagram which showed the deviation of the relative position of the charge newly input by photoelectric conversion, and the accumulation charge transferred in the accumulation | storage stage direction with respect to the charge transfer timing of the accumulation | storage stage direction in embodiment of this invention. The MTF characteristic figure which shows an example of the resolution performance of the accumulation | storage stage direction of the pattern optical image in embodiment of this invention. The MTF characteristic figure which shows an example of the resolution performance of the accumulation | storage stage direction of the pattern optical image in the prior art made into the comparative example. The block diagram which shows the outline of a storage type sensor. The conceptual diagram which shows the method of the image input of the to-be-photographed image by a storage type sensor. FIG. 3 is a conceptual diagram for explaining driving of a storage type sensor. 6 is a timing chart of a transfer clock showing an example of a storage type sensor driving method. The conceptual diagram which showed the deviation of the relative position of the charge newly input by photoelectric conversion, and the accumulation | storage charge transferred in the accumulation | storage stage direction with respect to the charge transfer timing of the accumulation | storage stage direction in a prior art.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Accumulation type (TDI) sensor 11 One-dimensional pixel row 12 Vertical transfer register 13, 13a Horizontal transfer register 14, 14a Output amplifier 15 Subject 16 Illumination light 17 Magnifying optical system 18 TDI synchronization control circuit 19 Sensor drive circuit 20 L / S pattern Image 21 Sensor output I / F
22 A / D conversion circuit 30 Image input device 31 Support substrate 32 TDI sensor moving mechanism 33 TDI sensor moving control circuit

Claims (4)

A vertical transfer register that arranges a plurality of pixels in the vertical and horizontal directions and transfers the charges photoelectrically converted by these pixels in the vertical direction and the accumulated charges transferred from the last stage of the vertical transfer register Is an image input method using a storage type sensor having a horizontal transfer register that transfers in parallel in the horizontal direction, and a sensor output unit that outputs a charge transferred by the horizontal transfer register as a digital signal,
Image input using a storage-type sensor, wherein the image is input by periodically reciprocating the position of the storage-type sensor by a distance corresponding to one pixel in accordance with the charge transfer timing in the vertical transfer register. Method. The storage type sensor cancels out the positional deviation in the storage type sensor caused by the charge transfer timing of the vertical transfer register between the charge input to the pixel by the photoelectric conversion and the charge transferred in the vertical direction. The image input method using the storage type sensor according to claim 1, wherein the position of the image sensor is moved. A vertical transfer register that arranges a plurality of pixels in the vertical and horizontal directions and transfers the charges photoelectrically converted by these pixels in the vertical direction and the accumulated charges transferred from the last stage of the vertical transfer register Is an image input device using a storage type sensor having a horizontal transfer register for transferring in parallel in the horizontal direction and a sensor output unit for reading out the charges transferred by the horizontal transfer register and outputting them as digital signals,
An image input apparatus comprising: a sensor position moving means for periodically reciprocating a position corresponding to one pixel in accordance with a charge transfer timing in the vertical transfer register. The sensor position moving means cancels a positional deviation in the storage type sensor caused by the charge transfer timing of the vertical transfer register between the charge input to the pixel by the photoelectric conversion and the charge transferred in the vertical direction. The image input apparatus according to claim 3, wherein the position of the storage type sensor is moved as described above.

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