JP4581743B2 - Illumination optical apparatus, exposure apparatus, and microdevice manufacturing method - Google Patents

Description

  The present invention relates to an illumination optical apparatus used in an exposure apparatus for manufacturing a microdevice such as a semiconductor element, a liquid crystal display element, and a thin film magnetic head in a lithography process, an exposure apparatus including the illumination optical apparatus, and the exposure apparatus. The present invention relates to a method for manufacturing a microdevice.

  In a conventional exposure apparatus, a light beam emitted from a light source is incident on a fly-eye lens (or micro fly-eye lens) as an optical integrator, and a secondary light source composed of a number of light sources is formed on the rear focal plane. The light beam from the secondary light source is restricted through an aperture stop disposed near the rear focal plane of the fly-eye lens as necessary, and then enters the condenser lens.

  The light beam condensed by the condenser lens illuminates the mask on which a predetermined pattern is formed in a superimposed manner. The light transmitted through the mask pattern forms an image on the wafer via the projection optical system. Thus, the mask pattern is projected and exposed (transferred) onto the wafer. The pattern formed on the mask is highly integrated. In order to accurately expose the fine pattern on the wafer, it is necessary to control the exposure amount at the time of exposure. In order to control the exposure amount, Needs to accurately measure the amount of illumination light (exposure light) that illuminates the mask. In order to measure the amount of illumination light (exposure light), the exposure apparatus is provided with an integrator sensor. The integrator sensor divides illumination light (exposure) by a half mirror or the like provided in the illumination optical system. The amount of light is detected (for example, see Patent Document 1).

JP 2002-33259 A

  In the above-described projection exposure apparatus, the amount of illumination light reflected by the half mirror and incident on the integrator sensor via the ND (attenuation) filter is detected by the integrator sensor. The ND filter has a function of reducing the energy density of the illumination light in accordance with the light receiving allowable range of the integrator sensor. The integrator sensor is a light whose energy density has been reduced by passing through the ND filter, The amount of light equivalent to the amount of light is detected.

  However, when part of the illumination light is reflected as detection light by a half mirror or the like, the reflectance of the S-polarized component light and the reflection of the half mirror or the like with respect to the reflection surface of the half mirror or the like included in the illumination light (detection light) Because the reflectance of the light of the P-polarized component with respect to the surface is different, the polarization state of the detection light incident on the integrator sensor is different from the polarization state of the illumination light (exposure light), which adversely affects the measurement result by the integrator sensor It has become. In addition, an ND filter is used to reduce the energy density of light. However, since the transmittance of the optical thin film of the ND filter is not stable, the transmittance variation of the optical thin film of the ND filter occurs. This is a factor that reduces the detection accuracy of the integrator sensor.

  An object of the present invention is to provide an illumination optical apparatus that can accurately detect the amount of illumination light by an integrator sensor, an exposure apparatus including the illumination optical apparatus, and a method of manufacturing a micro device using the exposure apparatus. It is.

  The illumination optical device according to the present invention is an illumination optical device that illuminates a surface to be irradiated with illumination light emitted from a light source. The extraction unit extracts a part of the illumination light as detection light, and the extraction unit extracts the illumination light. A measuring unit that measures the detection light; and an optical system that guides the detection light to the measurement unit. The optical system is orthogonal to the first linearly polarized light component rather than the reflectance of the light of the first linearly polarized light component. A first reflecting member having a reflecting surface with a high reflectance of the light of the second linearly polarized light component that vibrates in the direction to be reflected, and the reflection of the light of the first linearly polarized light component than the reflectance of the light of the second linearly polarized light component It has at least one combination with the 2nd reflective member which has a reflective surface with a high rate, It is characterized by the above-mentioned.

  According to the illumination optical device of the present invention, the optical system that guides the detection light to the measuring means includes at least one combination of the first reflecting member and the second reflecting member, and the second reflecting member is provided with the first reflecting member. Is reflected more than the light of the first linearly polarized light component, and the light of the first linearly polarized light component is reflected more than the light of the second linearly polarized light component by the second reflecting member. Therefore, the change in the polarization state of the detection light caused by being reflected by the first reflection member is canceled by being reflected by the second reflection member, and the polarization state of the detection light after being reflected by the second reflection member Is the same as the polarization state of the detection light before being reflected by the first reflecting member. Further, since the energy density of the detection light can be reduced by the detection light being reflected by the first reflection member and the second reflection member, an ND (attenuation) filter or the like that causes a reduction in measurement accuracy of the measurement means The energy density of the detection light can be lowered to within the light reception allowable range of the measurement means without using the. Accordingly, the light intensity of the detection light having the same polarization state as the polarization state of the illumination light and equivalent to the total light amount of the illumination light can be detected well by the measuring means, and based on the detected light amount of the detection light. Therefore, the illumination light can be adjusted satisfactorily.

  An exposure apparatus according to the present invention includes an illumination optical apparatus according to the present invention for illuminating the mask in an exposure apparatus that exposes a mask pattern on a photosensitive substrate, and the mask illuminated by the illumination optical apparatus. And a projection optical system for forming a pattern image on the photosensitive substrate.

  According to the exposure apparatus of the present invention, since the illumination optical apparatus of the present invention is provided, the polarization of the first linearly polarized light component and the second linearly polarized light component included in the detection light measured by the measuring means included in the illumination optical apparatus. The energy density of the detection light can be appropriately reduced without using an ND filter or the like that causes the state to be the same as the polarization state of the illumination light and causes a reduction in measurement accuracy of the measurement means. Therefore, the light amount of the detection light can be detected satisfactorily by the measuring means, and the exposure can be favorably performed with the exposure amount appropriately adjusted based on the detected light amount of the detection light.

  The microdevice manufacturing method of the present invention includes an exposure step of exposing a mask pattern onto a photosensitive substrate using the exposure apparatus of the present invention, and a development of developing the photosensitive substrate exposed by the exposure step. And a process.

  According to the microdevice manufacturing method of the present invention, since the microdevice is manufactured using the exposure apparatus of the present invention, an appropriate exposure amount adjusted based on the amount of detection light measured well by the measuring means. Thus, exposure can be performed and a good microdevice can be obtained.

  According to the illumination optical apparatus of the present invention, the optical system that guides the detection light to the measuring means includes at least one combination of the first reflecting member and the second reflecting member. Therefore, the change in the polarization state of the detection light caused by being reflected by the first reflection member is canceled by being reflected by the second reflection member, and the polarization state of the detection light after being reflected by the second reflection member Is the same as the polarization state of the detection light before being reflected by the first reflecting member. Further, since the energy density of the detection light can be reduced by the detection light being reflected by the first reflection member and the second reflection member, an ND (attenuation) filter or the like that causes a reduction in measurement accuracy of the measurement means The energy density of the detection light can be lowered to within the light reception allowable range of the measurement means without using the. Accordingly, the light intensity of the detection light having the same polarization state as the polarization state of the illumination light and equivalent to the total light amount of the illumination light can be detected well by the measuring means, and based on the detected light amount of the detection light. Therefore, the illumination light can be adjusted satisfactorily.

  Further, according to the exposure apparatus of the present invention, since the illumination optical apparatus of the present invention is provided, the first linearly polarized light component and the second linearly polarized light component included in the detection light measured by the measuring means provided in the illumination optical apparatus. Thus, the energy density of the detection light can be appropriately reduced without using an ND filter or the like that causes the measurement accuracy of the measurement means to be reduced. Therefore, the light amount of the detection light can be detected satisfactorily by the measuring means, and the exposure can be favorably performed with the exposure amount appropriately adjusted based on the detected light amount of the detection light.

  Further, according to the microdevice manufacturing method of the present invention, since the microdevice is manufactured by using the exposure apparatus of the present invention, an appropriate adjustment adjusted based on the light amount of the detection light well measured by the measuring means. Exposure can be performed according to the exposure amount, and a good microdevice can be obtained.

  An exposure apparatus according to a first embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a view showing the schematic arrangement of an exposure apparatus according to this embodiment. In the following description, the XYZ orthogonal coordinate system shown in FIG. 1 is set, and the positional relationship of each member will be described with reference to this XYZ orthogonal coordinate system. The XYZ orthogonal coordinate system is set so that the X axis and the Y axis are parallel to the wafer W (mask M), and the Z axis is set in a direction orthogonal to the wafer W. Further, the illumination optical device (light source 1 to imaging optical system 9b) provided in the exposure apparatus is configured to perform annular illumination.

  As shown in FIG. 1, an exposure apparatus according to this embodiment includes, for example, an ArF excimer laser light source that supplies light having a wavelength of about 193 nm as a laser light source (light source) 1 for supplying exposure light (illumination light). Alternatively, a KrF excimer laser light source that supplies light having a wavelength of about 248 nm is provided. A substantially parallel light beam emitted from the laser light source 1 along the Z direction has a rectangular cross section extending along the X direction, and is incident on a beam expander 2 including a pair of lenses 2a and 2b. Each lens 2a and 2b has a negative refractive power and a positive refractive power in the YZ plane of FIG. Therefore, the light beam incident on the beam expander 2 is enlarged in the YZ plane of FIG. 1 and shaped into a light beam having a predetermined rectangular cross section.

  The parallel light beam that has passed through the beam expander 2 as the shaping optical system is reflected by the bending mirror 3 and deflected in the Y direction, and then the crystal optical axis is rotatable about the optical axis AX and from the optical axis AX. The light enters the quarter wave plate 11 that can be inserted and removed. Here, when the elliptically polarized light is incident, the quarter wavelength plate 11 sets the crystal optical axis of the quarter wavelength plate 11 according to the characteristics of the incident elliptically polarized light, thereby It has a function of converting incident light into linearly polarized light.

  That is, when a KrF excimer laser light source or an ArF excimer laser light source is used as the laser light source 1, the laser light source 1 emits substantially linearly polarized light, for example, linearly polarized light having a polarization degree of 95% or more. Usually, in the optical path between the laser light source 1 and the quarter-wave plate 11, a plurality of right-angle prisms (not shown) are arranged as back reflectors. In general, when the linearly polarized light incident on the right-angle prism as the back reflector does not match the P-polarized light or the S-polarized light with respect to the incident surface of the right-angle prism, the linearly polarized light becomes elliptically polarized light due to total reflection at the right-angle prism. Change. Therefore, for example, even when incident light changes from linearly polarized light to elliptically polarized light through a right-angle prism, the crystal optical axis of the quarter wavelength plate 11 depends on the characteristics of the elliptically polarized light incident on the quarter wavelength plate 11. Is set, the incident light can be changed from elliptically polarized light to linearly polarized light.

  The light beam that has passed through the quarter-wave plate 11 passes through the half-wave plate 10 and the depolarizer (non-polarizing element) 12. FIG. 2 is a diagram showing a schematic configuration of the half-wave plate 10 and the depolarizer 12. As shown in FIG. 2, the half-wave plate 10 is configured such that the crystal optical axis is rotatable about the optical axis AX. The depolarizer 12 includes a wedge-shaped quartz prism 12a and a wedge-shaped quartz prism 12b having a shape complementary to the quartz prism 12a. The quartz prism 12a and the quartz prism 12b are configured as an integral prism assembly.

  When the crystal optical axis of the half-wave plate 10 is set to make an angle of 0 degree or 90 degrees with respect to the plane of polarization of the linearly polarized light incident thereon, the linearly polarized light incident on the half-wave plate 10 Passes through without changing the plane of polarization. In addition, when the crystal optical axis of the half-wave plate 10 is set to form an angle of 45 degrees with respect to the plane of polarization of the linearly polarized light incident thereon, the linearly polarized light incident on the half-wave plate 10 is It is converted into linearly polarized light whose polarization plane has changed by 90 degrees. Further, when the crystal optical axis of the quartz prism 12a is set to form an angle of 45 degrees with respect to the plane of polarization of the linearly polarized light incident thereon, the linearly polarized light incident on the quartz prism 12a is light in a non-polarized state. Converted to non-polarized light.

  In this embodiment, when the depolarizer 12 is positioned in the illumination optical path, the crystal optical axis of the quartz prism 12a is configured to form an angle of 45 degrees with respect to the polarization plane of the linearly polarized light that is incident. Incidentally, when the crystal optical axis of the crystal prism 12a is set to make an angle of 0 degree or 90 degrees with respect to the plane of polarization of the linearly polarized light incident thereon, the plane of polarization of the linearly polarized light incident on the crystal prism 12a is Pass through without change. Further, when the crystal optical axis of the half-wave plate 10 is set to make an angle of 22.5 degrees with respect to the plane of polarization of the linearly polarized light that is incident, The light is converted into non-polarized light including a linearly polarized light component that passes through without changing its polarization plane and a linearly polarized light component whose polarization plane changes by 90 degrees.

  When the depolarizer 12 is positioned in the illumination optical path, if the crystal optical axis of the half-wave plate 10 is set to make an angle of 0 degrees or 90 degrees with respect to the plane of polarization of the linearly polarized light, the half-wavelength The linearly polarized light incident on the plate 10 passes through the polarization plane without change and enters the crystal prism 12a. Since the crystal optical axis of the quartz prism 12a is set to form an angle of 45 degrees with respect to the plane of polarization of the linearly polarized light that is incident, the linearly polarized light that has entered the quartz prism 12a is converted into light that is not polarized. Is done.

  On the other hand, if the crystal optical axis of the half-wave plate 10 is set to make an angle of 45 degrees with respect to the plane of polarization of the linearly polarized light incident thereon, the light of the linearly polarized light incident on the half-wave plate 10 is polarized. Becomes linearly-polarized light changed by 90 degrees and enters the quartz prism 12a. Since the crystal optical axis of the quartz prism 12a is set to make an angle of 45 degrees with respect to the plane of polarization of the incident linearly polarized light, the linearly polarized light incident on the quartz prism 12a is converted into unpolarized light. Converted. The light depolarized through the quartz prism 12a passes through the quartz prism 12b as a compensator for compensating the traveling direction of the light.

  The light beam that has passed through the depolarizer 12 enters the diffractive optical element (conversion means) 4a. In general, a diffractive optical element (DOE) is formed by forming a step having a pitch of about the wavelength of exposure light (illumination light) on a glass substrate, and has a function of diffracting an incident beam to a desired angle. Specifically, the diffractive optical element 4a has a function of forming an annular light intensity distribution in the far field (or Fraunhofer diffraction region) when a parallel light beam having a rectangular cross section is incident. Therefore, the light beam that has passed through the diffractive optical element 4a forms an annular light intensity distribution, that is, a luminous flux having an annular cross section at the pupil position of an afocal lens 85 described later. The diffractive optical element 4a is configured to be retractable from the illumination optical path.

  In the following description, the diffractive optical element 4a is set in the illumination optical path, and a ring-shaped intensity distribution is formed at the pupil position of the illumination optical system to perform ring-shaped illumination. However, instead of the diffractive optical element for annular illumination, the diffractive optical element for multipolar illumination and the pupil position of the illumination optical system for forming a multipolar intensity distribution at the pupil position of the illumination optical system are used. It goes without saying that any illumination can be performed by arranging any one of the circular illumination diffractive optical elements for forming a circular intensity distribution in the illumination optical path.

  The light beam that has passed through the diffractive optical element 4 a enters an afocal lens (relay optical system) 85. The afocal lens 85 is set so that the front focal position of the afocal lens 85 and the position of the diffractive optical element 4a substantially coincide with each other, and the rear focal position thereof substantially coincides with the position of the predetermined surface 86 indicated by a broken line in the drawing. System (non-focal optical system). Accordingly, the substantially parallel light beam incident on the diffractive optical element 4 a is emitted from the afocal lens 85 as a substantially parallel light beam after forming an annular light intensity distribution on the pupil plane of the afocal lens 85.

  In addition, in the optical path between the front lens group 85a and the rear lens group 85b of the afocal lens 85, the half mirror 16 and the conical axicon system 87 as a light splitting member are arranged in order from the light source side on the pupil plane or in the vicinity thereof. Is arranged. The light beam converted into the non-polarized light through the half-wave plate 10 and the depolarizer 12 passes through the front lens group 85 a of the afocal lens 85 and enters the half mirror (extraction means) 16. .

  FIG. 3 is a diagram illustrating a schematic configuration of a light amount measuring device 17 including a half mirror (first reflecting member) 16. As shown in FIG. 3, a part of the illumination light is reflected by the half mirror 16, and a part of the reflected illumination light is an integrator sensor (measurement unit) 24 described later as detection light for measuring the light quantity. Led to. Here, linearly polarized light that vibrates in a direction (Z direction) along an incident surface (a surface parallel to the YZ plane) including the normal line of the half mirror 16 and the incident direction (Y direction) of light incident on the half mirror 16. The component is P-polarized light (first linearly polarized light) on the reflecting surface of the half mirror 16. Further, along a plane (plane parallel to the XY plane) perpendicular to the incident plane (plane parallel to the YZ plane) including the normal line of the half mirror 16 and the incident direction (Y direction) of light incident on the half mirror 16. The linearly polarized light component oscillating in the same direction (X direction) is S-polarized light (second linearly polarized light) on the reflecting surface of the half mirror 16.

  As a result, the half mirror 16 has a light reflectance of the S-polarized light component (hereinafter referred to as the second linearly polarized light component) of the detection light from the light reflectance of the P-polarized light component (hereinafter referred to as the first linearly polarized light component). It will have a high reflective surface. When the difference between the light amount of the P-polarized component and the light amount of the S-polarized component included in the illumination light incident on the half mirror 16 is small, the light amount of the second linearly polarized component included in the detection light reflected by the half mirror 16 is More than the light quantity of the first linearly polarized light component.

  The detection light reflected by the half mirror 16 enters the mirror (second reflecting member) 18 and is reflected by the reflecting surface of the mirror 18. The surface including the reflection surface of the mirror 18 is arranged in a direction intersecting with the surface including the reflection surface of the half mirror 16. Here, a linearly polarized light component oscillating in a direction (Z direction) along an incident surface (a plane parallel to the XZ plane) including the normal line of the mirror 18 and the incident direction (Z direction) of light incident on the mirror 18 ( (Second linearly polarized light) is P-polarized light on the reflecting surface of the mirror 18. In addition, a direction along a plane (plane parallel to the YZ plane) perpendicular to the incident plane (plane parallel to the XZ plane) including the normal line of the mirror 18 and the incident direction (Y direction) of the light incident on the mirror 18 The linearly polarized light component (first linearly polarized light) that vibrates in the (Y direction) is S-polarized light on the reflecting surface of the mirror 18. That is, in the mirror 18, the second linearly polarized component (S-polarized component with respect to the reflecting surface of the half mirror 16) becomes the P-polarized component with respect to the reflecting surface of the mirror 18, and the first linearly polarized component (P-polarized light with respect to the reflecting surface of the half mirror 16). Component) is arranged to be an S-polarized component with respect to the reflection surface of the mirror 18. The mirror 18 is a light whose reflectance of the S-polarized light component (that is, the first linearly polarized light component) with respect to the reflecting surface of the mirror 18 is P-polarized light component (that is, the second linearly polarized light component) with respect to the reflecting surface of the mirror 18. Therefore, the first linearly polarized light component of the detection light reflected by the mirror 18 is reflected more than the second linearly polarized light component. Accordingly, the amount of the second linearly polarized light component included in the detection light before entering the mirror 18 is larger than the amount of the first linearly polarized light component, and therefore the first linearly polarized light component included in the detection light reflected by the mirror 18 is larger. The difference between the light amount and the light amount of the second linearly polarized light component becomes small.

  In this embodiment, since the amount of light of the second linearly polarized component of the light reflected by the half mirror 16 (light before entering the mirror 18) is larger than the amount of light of the first linearly polarized component, the first linearly polarized light is used. The amount of light of the first linearly polarized light component is substantially the same as the amount of light of the second linearly polarized light component by being reflected by the mirror 18 having a reflecting surface in which the reflectance of the component light is higher than the reflectance of the light of the second linearly polarized light component. become. That is, since the change in the polarization state caused by the reflection by the half mirror 16 is canceled by the change in the polarization state caused by the reflection by the mirror 18, the first linearly polarized light of the detection light reflected by the mirror 18 is cancelled. The difference between the light amount of the component and the light amount of the second linearly polarized light component is the same as the difference between the light amount of the first linearly polarized light component and the light amount of the second linearly polarized light component before entering the half mirror 16.

  The detection light reflected by the mirror 18 enters the condenser lens 19. The condensing lens 19 is in the optical path between the half mirror 16 and the integrator sensor 24, and is at a position where detection light with a small difference between the light amount of the first linearly polarized light component and the light amount of the second linearly polarized light component passes. Has been placed.

  The detection light that has passed through the condenser lens 19 enters the mirror (second reflecting member) 20 and is reflected by the mirror 20. Here, a linearly polarized light component that vibrates in a direction (Z direction) along an incident surface (a surface parallel to the XZ plane) including the normal line of the mirror 20 and the incident direction (X direction) of light incident on the mirror 20 ( (Second linearly polarized light) is P-polarized light on the reflecting surface of the mirror 20. A direction along a plane (plane parallel to the YZ plane) perpendicular to the incident plane (plane parallel to the XZ plane) including the normal line of the mirror 20 and the incident direction (Y direction) of light incident on the mirror 20 The linearly polarized light component (first linearly polarized light) that vibrates in the (Y direction) is S-polarized light on the reflecting surface of the mirror 20. In the mirror 20, the second linearly polarized component (S-polarized component with respect to the reflecting surface of the half mirror 16) becomes a P-polarized component with respect to the reflecting surface of the mirror 20, and the first linearly polarized component (P-polarized component with respect to the reflecting surface of the half mirror 16). Are arranged so as to be the S-polarized light component with respect to the reflecting surface of the mirror 20. The mirror 20 has a reflecting surface in which the reflectance of the S-polarized light component (that is, the first linearly polarized light component) of the detection light is higher than the reflectance of the light of the P-polarized light component (that is, the second linearly polarized light component). Therefore, when the difference between the light amount of the first linearly polarized light component and the light amount of the second linearly polarized light component included in the detection light incident on the mirror 20 (illumination light incident on the half mirror 16) is small, the mirror 20 The amount of light of the first linearly polarized component contained in the detection light reflected by is greater than the amount of light of the second linearly polarized component.

  The detection light reflected by the mirror 20 enters the mirror (first reflecting member) 21 and is reflected by the reflecting surface of the mirror 21. Here, a linearly polarized light component that vibrates in a direction (Y direction) along an incident surface (a surface parallel to the YZ plane) including the normal line of the mirror 21 and the incident direction (−Z direction) of light incident on the mirror 21. (First linearly polarized light) is P-polarized light on the reflecting surface of the mirror 21. In addition, along a plane (plane parallel to the XZ plane) perpendicular to the incident plane (plane parallel to the YZ plane) including the normal line of the mirror 21 and the incident direction (−Z direction) of the light incident on the mirror 21. The linearly polarized light component (second linearly polarized light) that vibrates in the direction (X direction) is S-polarized light on the reflecting surface of the mirror 21. The surface including the reflective surface of the mirror 21 is arranged in a direction intersecting with the surface including the reflective surface of the mirror 20. That is, in the mirror 21, the second linearly polarized component (S-polarized component with respect to the reflecting surface of the half mirror 16) becomes the S-polarized component with respect to the reflecting surface of the mirror 21, and the first linearly polarized component (P-polarized light with respect to the reflecting surface of the half mirror 16). (Component) is arranged to be a P-polarized component with respect to the reflection surface of the mirror 21. The mirror 21 is a light whose reflectance of the S-polarized component (that is, the second linearly polarized component) with respect to the reflecting surface of the mirror 21 is P-polarized component (that is, the first linearly polarized component) with respect to the reflecting surface of the mirror 21. Therefore, the second linearly polarized light component of the detection light reflected by the mirror 21 is reflected more than the first linearly polarized light component. Therefore, since the light amount of the first linearly polarized component included in the detection light before entering the mirror 21 is larger than the light amount of the second linearly polarized component, the first linearly polarized component of the detection light reflected by the mirror 21 The difference between the light amount and the light amount of the second linearly polarized light component becomes small.

  In this embodiment, since the amount of light of the first linearly polarized component of the light reflected by the mirror 20 (light before entering the mirror 21) is larger than the amount of light of the second linearly polarized component, the second linearly polarized component Is reflected by the mirror 21 having a reflection surface higher than the reflectance of the first linearly polarized light component, so that the amount of light of the second linearly polarized light component becomes substantially the same as the amount of light of the first linearly polarized light component. That is, since the change in the polarization state caused by the reflection by the mirror 20 due to the change in the polarization state caused by the reflection by the mirror 21 is canceled, the first linear polarization component of the detection light reflected by the mirror 21 The difference between the light amount of the first linearly polarized light component and the light amount of the second linearly polarized light component is the difference between the light amount of the first linearly polarized light component and the light amount of the second linearly polarized light component before entering the mirror 20 (and thus the half mirror 16). It becomes the same. Further, since the detection light is reflected by the half mirror 16 and the mirrors 18, 20, and 21, the energy density thereof falls to within the light receiving allowable range of the integrator sensor 24.

  The detection light reflected by the mirror 21 passes through the condenser lenses 22 and 23. The condenser lenses 22 and 23 are in the optical path between the half mirror 16 and the integrator sensor 24, and the detection light having a small difference between the light amount of the first linearly polarized light component and the light amount of the second linearly polarized light component passes therethrough. Placed in position.

  The detection light that has passed through the condenser lenses 22 and 23 enters the integrator sensor 24, and a control unit (not shown) emits illumination light (exposure light) emitted from the light source 1 based on the amount of detection light detected by the integrator sensor 24. The exposure amount is controlled by adjusting at least one of the amount of light and the time.

  On the other hand, as shown in FIG. 1, the illumination light that has passed through the half mirror 16 enters the conical axicon system 87. FIG. 4 is a diagram showing a schematic configuration of the conical axicon system 87. The conical axicon system 87 includes, in order from the light source side, a first prism member 87a having a flat surface facing the light source side and a concave conical refracting surface facing the mask side, and a convex cone facing the plane toward the mask M side and facing the light source side. And a second prism member 87b having a refracting surface facing the surface.

  The concave conical refracting surface of the first prism member 87a and the convex conical refracting surface of the second prism member 87b are complementarily formed so as to be in contact with each other. Further, at least one of the first prism member 87a and the second prism member 87b is configured to be movable along the optical axis AX, and the concave conical refractive surface of the first prism member 87a and the second prism member 87b. The distance from the convex conical refracting surface is variable.

  Here, in a state where the concave conical refracting surface of the first prism member 87a and the convex conical refracting surface of the second prism member 87b are in contact with each other, the conical axicon system 87 functions as a plane parallel plate, There is no effect on the annular secondary light source formed. However, when the concave conical refracting surface of the first prism member 87a and the convex conical refracting surface of the second prism member 87b are separated from each other, the conical axicon system 87 functions as a so-called beam expander. Accordingly, as the interval of the conical axicon system 87 changes, the angle of the incident light beam on the predetermined surface 86 indicated by the broken line in FIG. 1 changes.

  FIG. 5 is a diagram for explaining the action of the conical axicon system 87 on the secondary light source formed in the annular illumination. The smallest ring-shaped secondary light source 130a formed in a state where the distance between the conical axicon systems 87 is 0 and the focal length of a zoom lens 90 described later is set to a minimum value (hereinafter referred to as “standard state”) By increasing the interval of the conical axicon system 87 from 0 to a predetermined value, the width (1/2 of the difference between the outer diameter and the inner diameter: indicated by an arrow in the figure) does not change, and the outer diameter and the inner diameter are changed. Are changed to an annular secondary light source 130b. That is, due to the action of the conical axicon system 87, the width of the annular light source does not change, and the annular ratio (inner diameter / outer diameter) and size (outer diameter) both change.

  The light beam that has passed through the afocal lens 85 is incident on a microlens array 8 as an optical integrator through a zoom lens 90 for varying σ value. The position of the predetermined surface 86 is disposed at or near the front focal position of the zoom lens 90, and the incident surface of the microlens array 8 is disposed at or near the rear focal plane of the zoom lens 90. That is, in the zoom lens 90, the predetermined surface 86 and the incident surface of the microlens array 8 are arranged in a substantially Fourier relationship, and the pupil surface of the afocal lens 85 and the incident surface of the microlens array 8 are optically arranged. In general, they are arranged in a substantially conjugate manner. Accordingly, on the incident surface of the microlens array 8, for example, a ring-shaped illumination field centered on the optical axis AX is formed in the same manner as the pupil surface of the afocal lens 85. The overall shape of the annular illumination field changes in a similar manner depending on the focal length of the zoom lens 90.

  FIG. 6 is a diagram for explaining the action of the zoom lens 90 on the secondary light source formed in the annular illumination. An annular secondary light source 130a formed in a standard state is an annular secondary light source whose overall shape is enlarged in a similar manner by increasing the focal length of the zoom lens 90 from a minimum value to a predetermined value. It changes to 130c. That is, due to the action of the zoom lens 90, both the width and size (outer diameter) change without changing the annular ratio of the annular secondary light source.

  The microlens array 8 is an optical element made up of a large number of microlenses having positive refractive power arranged vertically and horizontally and densely. Each microlens constituting the microlens array 8 has a rectangular cross section similar to the shape of the illumination field to be formed on the mask M (and thus the shape of the exposure region to be formed on the wafer W). The light beam incident on the microlens array 8 is two-dimensionally divided by a large number of microlenses, and is substantially the same as the illumination field formed by the light beam incident on the microlens array 8 on the rear focal plane (and thus the illumination pupil). A secondary light source having a light intensity distribution, that is, a secondary light source composed of a substantial surface light source having an annular shape centering on the optical axis AX is formed.

  The luminous flux from the annular secondary light source formed on the rear focal plane of the microlens array 8 illuminates the mask blind MB in a superimposed manner via the condenser lens 9a. In the mask blind MB as an illumination field stop, a rectangular illumination field corresponding to the shape and focal length of each microlens constituting the microlens array 8 is formed. The light beam that has passed through the rectangular opening (light transmission part) of the mask blind MB is subjected to the light condensing action of the imaging optical system 9b, and is then superimposed on the mask (irradiated surface) M on which a predetermined pattern is formed. Illuminate. That is, the imaging optical system 9b forms an image of the rectangular opening of the mask blind MB on the mask M. The light beam that has passed through the pattern of the mask M forms an image of the mask pattern on the wafer W, which is a photosensitive substrate, via the projection optical system PL. In this way, the pattern of the mask M is formed in each exposure region of the wafer W by performing batch exposure or scan exposure while two-dimensionally driving and controlling the wafer W in a plane orthogonal to the optical axis AX of the projection optical system PL. Sequential exposure is performed.

  The illumination conditions for the mask M as the irradiated surface and the imaging conditions for the wafer W as the photosensitive substrate can be automatically set according to the type of the pattern of the mask M, for example. Here, as parameters for changing the illumination condition for the mask M, insertion / removal of the half-wave plate, rotation angle position, selection of the type of the diffractive optical element 4a, interval of the conical axicon system 87, and σ value variable For example, the focal length of the zoom lens 90 for use in the projection optical system PL may include parameters such as the focal length of the zoom lens 90 and the position and orientation of one or more optical elements in the projection optical system PL. The diameter of a variable aperture stop (not shown) in the PL can be mentioned.

  According to the exposure apparatus of the first embodiment, the optical system that guides the detection light to the integrator sensor 24 includes the combination of the half mirror 16 and the mirror 18 and the combination of the mirrors 20 and 21, and the first reflection. The light of the second linearly polarized component is reflected more than the light of the first linearly polarized component by the half mirror 16 and the mirror 21 as members, and the light of the first linearly polarized component is reflected by the mirror 18 and the mirror 20 as the second reflecting member. Is reflected more than the light of the second linearly polarized light component. Therefore, the change in the polarization state of the detection light caused by being reflected by the half mirror 16 is canceled by being reflected by the mirror 18, and the polarization state of the detection light after being reflected by the mirror 18 is changed by the half mirror 16. This is the same as the polarization state of the detection light before being reflected. Similarly, the change in the polarization state of the detection light caused by being reflected by the mirror 20 is canceled by being reflected by the mirror 21, and the polarization state of the detection light after being reflected by the mirror 21 is the mirror 20 (and eventually This is the same as the polarization state of the detection light before being reflected by the half mirror 16).

  In addition, since the detection light is reflected by the half mirror 16 and the mirrors 18, 20, and 21, the energy density of the detection light can be efficiently reduced, and this causes a decrease in the measurement accuracy of the integrator sensor 24. Without using an (attenuation) filter or the like, the energy density of the detection light can be reduced to within the allowable light receiving range of the integrator sensor 24. Therefore, the integrator sensor 24 can satisfactorily detect the amount of detection light having the same polarization state as that of the illumination light and equivalent to the total amount of illumination light. Exposure can be performed satisfactorily with the exposure amount appropriately adjusted based on the above.

  In the first embodiment, a combination of the half mirror 16 and the mirror 18 and a combination of the mirror 20 and the mirror 21 (two combinations of the first reflecting member and the second reflecting member) are provided. However, one combination of the first reflecting member and the second reflecting member may be provided. In this case, the optical system that guides the detection light to the integrator sensor can be made compact. Moreover, you may make it provide three or more combinations of a 1st reflective member and a 2nd reflective member. In this case, the energy density of the detection light can be sufficiently reduced without changing the polarization state of the detection light, which is effective when the allowable light reception range of the integrator sensor is small.

  Next, with reference to the drawings, an exposure apparatus according to a second embodiment of the present invention will be described. The configuration of the exposure apparatus according to the second embodiment is obtained by changing the light quantity measurement device 17 of the exposure apparatus according to the first embodiment to a light quantity measurement device 30. Therefore, in the description of the second embodiment, a detailed description of the same configuration as that of the exposure apparatus according to the first embodiment is omitted. In the description of the second embodiment, the same components as those of the exposure apparatus according to the first embodiment are denoted by the same reference numerals as those used in the first embodiment. Do.

  FIG. 7 is a diagram illustrating a schematic configuration of a light amount measurement device 30 according to the second embodiment. As shown in FIG. 7, a part of the illumination light is reflected by the half mirror (first reflection member) 16, and a part of the reflected illumination light is an integrator described later as detection light for measuring the light quantity. It is guided to a sensor (measuring means) 37. Here, linearly polarized light that vibrates in a direction (Z direction) along an incident surface (a surface parallel to the YZ plane) including the normal line of the half mirror 16 and the incident direction (Y direction) of light incident on the half mirror 16. The component is P-polarized light (first linearly polarized light) on the reflecting surface of the half mirror 16. Further, along a plane (plane parallel to the XY plane) perpendicular to the incident plane (plane parallel to the YZ plane) including the normal line of the half mirror 16 and the incident direction (Y direction) of light incident on the half mirror 16. The linearly polarized light component oscillating in the same direction (X direction) is S-polarized light (second linearly polarized light) on the reflecting surface of the half mirror 16.

  The half mirror 16 has a reflecting surface in which the reflectance of the S-polarized light component (hereinafter referred to as the second linearly polarized light component) of the illumination light is higher than the reflectance of the P-polarized light component (hereinafter referred to as the first linearly polarized light component). Therefore, when the light amount of the P-polarized component and the light amount of the S-polarized component included in the illumination light incident on the half mirror 16 are the same, the light amount of the second linearly polarized component of the detection light reflected by the half mirror 16 is the first light amount. More than the amount of light of one linearly polarized light component.

  The detection light reflected by the half mirror 16 enters the mirror (second reflecting member) 31 and is reflected by the reflecting surface of the mirror 31. The surface including the reflection surface of the mirror 31 is arranged in a direction intersecting with the surface including the reflection surface of the half mirror 16. Here, a linearly polarized light component oscillating in a direction (Z direction) along an incident surface (a surface parallel to the XZ plane) including the normal line of the mirror 31 and the incident direction (Z direction) of light incident on the mirror 31. (Second linearly polarized light) is P-polarized light on the reflecting surface of the mirror 31. Further, a direction along a plane (plane parallel to the YZ plane) perpendicular to the incident plane (plane parallel to the XZ plane) including the normal line of the mirror 31 and the incident direction (Y direction) of the light incident on the mirror 31 The linearly polarized light component (first linearly polarized light) that vibrates in the (Y direction) is S-polarized light on the reflecting surface of the mirror 31. That is, in the mirror 31, the second linearly polarized component (S-polarized component with respect to the reflecting surface of the half mirror 16) becomes the P-polarized component with respect to the reflecting surface of the mirror 31, and the first linearly polarized component (P-polarized light with respect to the reflecting surface of the half mirror 16). Component) is arranged to be an S-polarized component with respect to the reflecting surface of the mirror 31. In the mirror 31, the reflectance of the S-polarized light component (that is, the first linearly polarized light component) with respect to the reflecting surface of the mirror 31 is higher than the reflectance of the P-polarized light component (that is, the second linearly polarized light component) with respect to the reflecting surface of the mirror 31. Since it has a high reflection surface, the first linearly polarized light component of the detection light reflected by the mirror 31 is reflected more than the second linearly polarized light component. Accordingly, the amount of the second linearly polarized light component included in the detection light before entering the mirror 31 is larger than the amount of the first linearly polarized light component, and therefore the first linearly polarized light component included in the detection light reflected by the mirror 31 is larger. The difference between the light amount and the light amount of the second linearly polarized light component becomes small.

  In this embodiment, since the amount of light of the second linearly polarized component of the light reflected by the half mirror 16 (light before entering the mirror 31) is larger than the amount of light of the first linearly polarized component, the first linearly polarized light is used. The amount of light of the first linearly polarized light component becomes substantially the same as the amount of light of the second linearly polarized light component by being reflected by the mirror 31 having a reflection surface whose component reflectance is higher than that of the second linearly polarized light component. That is, since the change in the polarization state caused by the reflection by the half mirror 16 is canceled by the change in the polarization state caused by the reflection by the mirror 31, the first linearly polarized light of the detection light reflected by the mirror 31 is cancelled. The difference between the light amount of the component and the light amount of the second linearly polarized light component is the same as the difference between the light amount of the first linearly polarized light component and the light amount of the second linearly polarized light component before entering the half mirror 16.

  The detection light reflected by the mirror 31 passes through the condenser lenses 32 and 33. The condensing lenses 32 and 33 are in the optical path between the half mirror 16 and the integrator sensor 37, and the detection light having a small difference between the light amount of the first linearly polarized light component and the light amount of the second linearly polarized light component passes therethrough. Placed in position.

  The detection light that has passed through the condenser lenses 32 and 33 is incident on a diffractive optical element (DOE) 35 as a diffusing element. The diffractive optical element 35 is disposed at or near a position optically conjugate with the pupil plane position of the illumination optical apparatus. The diffractive optical element 35 diffuses detection light that passes through the diffractive optical element 35. By diffusing the detection light, an accurate exposure amount can be obtained by detecting a part of the detection light by the integrator sensor 37 instead of the total light amount of the detection light.

  The detection light that has passed through the diffractive optical element 35 enters the condenser lens 36. The condensing lens 36 is in the optical path between the half mirror 16 and the integrator sensor 37 and is at a position where detection light with a small difference between the light amount of the first linearly polarized light component and the light amount of the second linearly polarized light component passes. Has been placed.

  The detection light that has passed through the condenser lens 36 enters an integrator sensor 37. The integrator sensor 37 detects detection light that has entered a pinhole (not shown), and outputs the detection result to a control unit (not shown). A control unit (not shown) controls the exposure amount by adjusting at least one of the amount of illumination light (exposure light) emitted from the light source 1 and the time based on the amount of detection light detected by the integrator sensor 37. Do.

  The detection accuracy of the integrator sensor 37 is determined by the combination of the pinhole diameter of the integrator sensor 37, the focal length of the condenser lens 36, and the divergence angle of the diffractive optical element 35 as a diffusing element. The

  According to the second embodiment, the optical system that guides the detection light to the integrator sensor 37 includes the combination of the half mirror 16 and the mirror 31, and the second linearly polarized light is provided by the half mirror 16 as the first reflecting member. The component light is reflected more than the first linear polarization component light, and the first linear polarization component light is reflected more than the second linear polarization component light by the mirror 31 as the second reflecting member. Accordingly, the change in the polarization state of the detection light caused by being reflected by the half mirror 16 is canceled by being reflected by the mirror 31, and the polarization state of the detection light after being reflected by the mirror 31 is caused by the half mirror 16. This is the same as the polarization state of the detection light before being reflected.

  In addition, since the detection light is diffused by passing through the diffractive optical element 35 as a diffusion element, and the exposure amount can be measured by detecting a part of the diffused detection light, the integrator sensor 37 can provide high accuracy. In addition, detection light can be detected. Therefore, the integrator sensor 37 can satisfactorily detect the amount of detection light having the same polarization state as that of the illumination light and equivalent to the total amount of illumination light. Exposure can be performed satisfactorily with the exposure amount appropriately adjusted based on the above.

  In addition, in this 2nd Embodiment, although the combination of the half mirror 16 and the mirror 31, ie, the combination of the 1st reflective member and the 2nd reflective member, is provided, the 1st reflective member and the 2nd You may make it provide two or more combinations with a reflection member.

  In the second embodiment, one diffractive optical element 35 as a diffusing element is provided, but two or more diffractive optical elements 35 may be provided. In this case, the diffusion effect of the detection light can be increased, and the amount of detection light equivalent to the illumination light can be detected with higher accuracy by the integrator sensor 37. Further, although the diffractive optical element 35 as a diffusing element is arranged in the optical path between the condenser lens 33 and the condenser lens 36, it is in the optical path between the half mirror 16 and the integrator sensor 37 and is illuminated. You may make it arrange | position in the position optically conjugate with the pupil-plane position of an optical apparatus, or its vicinity.

  Further, in each of the above-described embodiments, the half mirror as the extraction means is disposed in the optical path between the lens and the conical axicon system, but in the optical path between the diffractive optical element and the microlens array. What is necessary is just to make it arrange | position to either.

  In the exposure apparatus according to each of the above-described embodiments, the reticle (mask) is illuminated by the illumination optical system, and the transfer pattern formed on the mask is exposed to the photosensitive substrate (plate) using the projection optical system. Thus, a micro device (semiconductor element, imaging element, liquid crystal display element, thin film magnetic head, etc.) can be manufactured. FIG. 8 is a flowchart of an example of a method for obtaining a semiconductor device as a micro device by forming a predetermined circuit pattern on a plate or the like as a photosensitive substrate using the exposure apparatus according to each of the embodiments described above. Will be described with reference to FIG.

  First, in step S301 in FIG. 8, a metal film is deposited on one lot of plates. In the next step S302, a photoresist is applied on the metal film on the one lot of plates. Thereafter, in step S303, using the exposure apparatus according to each of the above-described embodiments, the pattern image on the mask is sequentially exposed and transferred to each shot area on the one lot of plates via the projection optical system. Thereafter, in step S304, the photoresist on the one lot of plates is developed, and in step S305, etching is performed on the one lot of plates using the resist pattern as a mask to obtain a pattern on the mask. Corresponding circuit patterns are formed in each shot area on each plate.

  Thereafter, a device pattern such as a semiconductor element is manufactured by forming a circuit pattern of an upper layer. According to the above-described microdevice manufacturing method, exposure is performed with exposure light having an appropriate amount of light using the exposure apparatus according to each of the above-described embodiments. Can be obtained with throughput. In steps S301 to S305, a metal is vapor-deposited on the plate, a resist is applied on the metal film, and exposure, development and etching processes are performed. Prior to these processes, the process is performed on the plate. It is needless to say that after forming a silicon oxide film, a resist may be applied on the silicon oxide film, and steps such as exposure, development, and etching may be performed.

  In the exposure apparatus according to each of the above-described embodiments, a liquid crystal display element as a micro device can be obtained by forming a predetermined pattern (circuit pattern, electrode pattern, etc.) on a plate (glass substrate). . Hereinafter, an example of the technique at this time will be described with reference to the flowchart of FIG. In FIG. 9, in the pattern forming step S401, there is a so-called photolithography step in which the exposure apparatus according to each of the above embodiments is used to transfer and expose a mask pattern onto a photosensitive substrate (such as a glass substrate coated with a resist). Executed. By this photolithography process, a predetermined pattern including a large number of electrodes and the like is formed on the photosensitive substrate. Thereafter, the exposed substrate undergoes steps such as a developing step, an etching step, and a resist stripping step, whereby a predetermined pattern is formed on the substrate, and the process proceeds to the next color filter forming step S402.

  Next, in the color filter forming step S402, a large number of groups of three dots corresponding to R (Red), G (Green), and B (Blue) are arranged in a matrix or three of R, G, and B A color filter is formed by arranging a plurality of stripe filter sets in the horizontal scanning line direction. Then, after the color filter formation step S402, a cell assembly step S403 is executed. In the cell assembly step S403, a liquid crystal panel (liquid crystal cell) is assembled using the substrate having the predetermined pattern obtained in the pattern formation step S401, the color filter obtained in the color filter formation step S402, and the like. In the cell assembly step S403, for example, liquid crystal is injected between the substrate having the predetermined pattern obtained in the pattern formation step S401 and the color filter obtained in the color filter formation step S402, and a liquid crystal panel (liquid crystal cell ).

  Thereafter, in a module assembly step S404, components such as an electric circuit and a backlight for performing a display operation of the assembled liquid crystal panel (liquid crystal cell) are attached to complete a liquid crystal display element. According to the above-described method for manufacturing a liquid crystal display element, since exposure is performed with exposure light having an appropriate light amount using the exposure apparatus according to each of the above-described embodiments, a liquid crystal display element having a fine circuit pattern has a high resolution. And can be obtained with high throughput.

It is a figure which shows schematic structure of the exposure apparatus concerning 1st Embodiment. It is a figure which shows schematic structure of the 1/2 wavelength plate and depolarizer concerning 1st Embodiment. It is a figure which shows schematic structure of the light quantity measuring apparatus concerning 1st Embodiment. It is a figure which shows schematic structure of the conical axicon system concerning 1st Embodiment. It is a figure for demonstrating the effect | action of the cone axicon system with respect to the secondary light source formed in the annular illumination concerning 1st Embodiment. It is a figure for demonstrating the effect | action of the zoom lens with respect to the secondary light source formed in the annular illumination concerning 1st Embodiment. It is a figure which shows schematic structure of the light quantity measuring device concerning 2nd Embodiment. It is a flowchart which shows the manufacturing method of the semiconductor device as a microdevice concerning embodiment of this invention. It is a flowchart which shows the manufacturing method of the liquid crystal display element as a microdevice concerning embodiment of this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Laser light source, 2 ... Beam expander, 3 ... Bending mirror, 4a ... Diffractive optical element, 8 ... Micro lens array, 9a ... Condenser lens, 9b ... Imaging optical system, 10 ... 1/2 wavelength plate, 11 ... 1/4 wavelength plate, 12 ... depolarizer, 16 ... half mirror, 17, 30 ... light quantity measuring device, 18, 20, 21, 31 ... mirror, 19, 22, 23, 32, 33, 36 ... condensing lens, 35 DESCRIPTION OF SYMBOLS ... Diffusing element (DOE), 24 ... Integrator sensor, 85 ... Afocal lens, 87 ... Conical axicon system, 90 ... Zoom lens, MB ... Mask blind, M ... Mask, PL ... Projection optical system, W ... Wafer.

Claims (9)

In an illumination optical device that illuminates the illuminated surface with illumination light emitted from a light source,
Extraction means for extracting a part of the illumination light as detection light;
Measuring means for measuring the detection light extracted by the extracting means;
An optical system for guiding the detection light to the measuring means;
With
The optical system is
At least one condenser lens;
A first reflecting member having a reflecting surface in which the reflectance of light of the second linearly polarized light component oscillating in a direction orthogonal to the first linearly polarized light component is higher than the reflectance of light of the first linearly polarized light component; A combination with a second reflecting member having a reflecting surface in which the reflectance of light of the first linearly polarized light component is higher than the reflectance of light of the linearly polarized light component ;
Have
The condensing lens is in the optical path between the extracting unit and the measuring unit, and the detection light that has a small difference between the light amount of the first linearly polarized light component and the light amount of the second linearly polarized light component passes therethrough. An illumination optical device, which is disposed at a position where The illumination optical apparatus according to claim 1, wherein there are a plurality of the combinations of the first reflecting member and the second reflecting member. 2. The illumination optical apparatus according to claim 1, wherein there is only one combination of the first reflecting member and the second reflecting member.   The first reflecting member and the second reflecting member are arranged in a direction in which a surface including the reflecting surface of the first reflecting member and a surface including the reflecting surface of the second reflecting member intersect each other. The illumination optical apparatus according to any one of claims 1 to 3. Conversion means for converting the illumination light into a desired shape, and an optical integrator for uniformly illuminating the irradiated surface based on the illumination light set by the conversion means,
5. The illumination optical apparatus according to claim 1, wherein the extraction unit is disposed in an optical path between the conversion unit and the optical integrator. 6.   6. The illumination optical apparatus according to claim 1, wherein the optical system includes at least one diffusing element.   The diffusing element is disposed in an optical path between the extracting unit and the measuring unit and at or near a position optically conjugate with a pupil plane position of the illumination optical device. Item 7. The illumination optical device according to Item 6. In an exposure apparatus that exposes a mask pattern on a photosensitive substrate,
The illumination optical apparatus according to any one of claims 1 to 7, which illuminates the mask;
A projection optical system for forming an image of the pattern of the mask illuminated by the illumination optical device on the photosensitive substrate;
An exposure apparatus comprising: An exposure step of exposing a pattern of a mask onto a photosensitive substrate using the exposure apparatus according to claim 8;
A developing step of developing the photosensitive substrate exposed by the exposing step;
A method for manufacturing a microdevice, comprising:

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