JP4579029B2 - Substrate processing equipment - Google Patents

Description

  The present invention relates to a substrate processing apparatus for processing a substrate.

  In order to perform various processes on various substrates such as a semiconductor substrate, a liquid crystal display substrate, a plasma display substrate, an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, and a photomask substrate, It is used.

  In such a substrate processing apparatus, generally, a plurality of different processes are continuously performed on a single substrate. The substrate processing apparatus described in Patent Document 1 includes an indexer block, an antireflection film processing block, a resist film processing block, a development processing block, and an interface block. An exposure apparatus that is an external apparatus separate from the substrate processing apparatus is disposed adjacent to the interface block.

  In the substrate processing apparatus described above, the substrate carried in from the indexer block is configured such that after the formation of the antireflection film and the coating process of the resist film are performed in the antireflection film processing block and the resist film processing block, the interface block is To the exposure apparatus. After the exposure process is performed on the resist film on the substrate in the exposure apparatus, the substrate is transported to the development processing block via the interface block. After a resist pattern is formed by performing development processing on the resist film on the substrate in the development processing block, the substrate is transported to the indexer block.

In recent years, miniaturization of resist patterns has become an important issue as the density and integration of devices increase. In a conventional general exposure apparatus, exposure processing is performed by reducing and projecting a reticle pattern onto a substrate via a projection lens. However, in such a conventional exposure apparatus, since the line width of the exposure pattern is determined by the wavelength of the light source of the exposure apparatus, there is a limit to the miniaturization of the resist pattern.

Accordingly, a liquid immersion method has been proposed as a projection exposure method that enables further miniaturization of the exposure pattern (see, for example, Patent Document 2). In the projection exposure apparatus of Patent Document 2, a liquid is filled between the projection optical system and the substrate, and the exposure light on the substrate surface can be shortened. Thereby, the exposure pattern can be further miniaturized.
JP 2003-324139 A International Publication No. 99/49504 Pamphlet

  In the projection exposure apparatus disclosed in Patent Document 2, since the exposure process is performed in a state where the substrate and the liquid are in contact with each other, the substrate after the exposure process is carried out of the projection exposure apparatus with the liquid attached thereto.

  Therefore, when the projection exposure apparatus of Patent Document 2 is provided as an external apparatus in the substrate processing apparatus of Patent Document 1, the liquid adhering to the substrate unloaded from the projection exposure apparatus adheres to the holding arm. The holding arm also carries the substrate before the exposure process. Therefore, when the liquid adheres to the holding arm, the liquid attached to the holding arm also adheres to the substrate before the exposure process.

  Thereby, dust or the like in the atmosphere adheres to the liquid of the substrate when the substrate is transported, and the substrate is contaminated. As a result, the resolution performance during the exposure process in the exposure apparatus may deteriorate.

  Further, when the substrate to which the liquid adheres during the exposure process is transported through each processing block, the liquid adhering to the substrate affects the atmosphere in the processing block. Thereby, it becomes difficult to adjust the temperature and humidity in each processing block, and processing defects of the substrate occur.

  An object of the present invention is to provide a substrate processing apparatus capable of sufficiently preventing substrate processing defects.

(1)
A substrate processing apparatus according to the present invention is a substrate processing apparatus that is disposed adjacent to an exposure apparatus, and is provided adjacent to one side surface of the exposure apparatus, and a predetermined amount is applied to a substrate before exposure processing by the exposure apparatus. a first processing unit for performing processing, a second processing unit for performing predetermined processing on a substrate after the exposure processing by the provided exposure apparatus adjacent to the other side of the exposure apparatus, the first A substrate carry-in / carry-out unit disposed adjacent to the first processing unit on the side opposite to the exposure apparatus with respect to the first processing unit, and having a mounting unit on which a substrate storage container for storing the substrate is mounted; A substrate carry-out unit disposed adjacent to the second process unit on the side opposite to the exposure apparatus with respect to the process unit, a path connecting the substrate carry-in / carry-out part and the substrate carry-out part, and a path provided and a substrate transfer unit, the second processing section, our cleaning of the substrate A first cleaning and drying process unit for performing fine dried seen including, a substrate carry-out section, carries the substrate accommodated in the substrate storage container mounted on the mounting portion to the first processing unit, the substrate carry-out The unit carries out the substrate from the second processing unit, the substrate carrying unit carries the substrate carried out by the substrate carrying out unit by moving the path, and the substrate carrying in / out unit carries the substrate. The substrate transported by the unit is stored in a substrate storage container mounted on the mounting unit .

In the substrate processing apparatus according to the present invention, the substrate stored in the substrate storage container placed on the placement unit by the substrate carry-in / out unit is carried into the first processing unit, and before the exposure processing in the first processing unit. A predetermined process is performed on the substrate. Next, after the exposure processing is performed on the substrate in the exposure apparatus, predetermined processing including cleaning and drying processing is performed on the substrate after the exposure processing in the second processing unit. The substrate is unloaded from the second processing unit by the substrate unloading unit. As the substrate transport unit moves along the path, the substrate unloaded from the second processing unit is transported to the substrate loading / unloading unit. The substrate transported by the substrate transporting unit by the substrate transporting / unloading unit is stored in the substrate storage container mounted on the mounting unit.

  In this case, since the substrate after the exposure processing is not processed in the first processing unit, even if a liquid adheres to the substrate during the exposure processing, the liquid does not affect the atmosphere of the first processing unit. This facilitates temperature and humidity adjustment of the first processing unit.

  In addition, since the liquid adhering to the substrate during the exposure process is prevented from falling into the first processing unit, it is possible to prevent malfunction such as an abnormality in the electrical system of the substrate processing apparatus.

  Further, the liquid adhering to the substrate during the exposure process is also prevented from adhering to the substrate before the exposure process. This prevents dust in the atmosphere from adhering to the substrate before the exposure process, so that it is possible to prevent degradation in resolution performance during the exposure process. Further, by preventing dust and the like from adhering to the substrate before the exposure processing, contamination in the exposure apparatus can be prevented.

  In addition, since the first cleaning / drying processing unit cleans the substrate after the exposure processing, even if dust or the like in the atmosphere adheres to the substrate to which the liquid has adhered during the exposure processing after the exposure processing, Can be removed.

  Further, since the substrate after the exposure processing is dried in the first cleaning / drying processing unit, it is possible to prevent dust and the like in the atmosphere from adhering to the substrate after the exposure processing. Thereby, the contamination of the substrate after the exposure processing can be prevented.

  Further, by drying the substrate after the exposure processing, it is possible to prevent the liquid attached to the substrate during the exposure processing from affecting the atmosphere in the second processing unit. Thereby, temperature and humidity adjustment in the second processing unit is facilitated.

  In addition, since the liquid adhering to the substrate during the exposure process is prevented from falling into the second processing unit, it is possible to prevent malfunction such as an abnormality in the electrical system of the substrate processing apparatus.

  As a result, it becomes possible to sufficiently prevent processing defects of the substrate.

(2)
The first cleaning / drying processing unit may be provided adjacent to the exposure apparatus.

  In this case, since the substrate can be cleaned and dried immediately after the exposure processing, the contamination of the substrate can be surely prevented and the liquid attached to the substrate can be surely dropped in the substrate processing apparatus. Can be prevented.

(3)
The first processing unit includes a photosensitive film forming unit that forms a photosensitive film made of a photosensitive material on the substrate, and the second processing unit is configured to perform cleaning and drying processing of the substrate after the cleaning and drying processing by the first cleaning / drying processing unit. A development processing unit for performing development processing may be further included.

  In this case, since the cleaning and drying processing can be performed by the first cleaning / drying processing unit before the development processing by the development processing unit, contamination of the substrate before the development processing can be prevented. Thereby, it is possible to prevent the processing failure of the substrate in the development processing unit.

(4)
The first processing unit may further include a protective film forming unit that forms a protective film for protecting the photosensitive film.

  In this case, since the protective film is formed on the photosensitive film, the components of the photosensitive film are prevented from being eluted into the liquid even when the exposure processing is performed in a state where the substrate is in contact with the liquid in the exposure apparatus. The Thereby, contamination in the exposure apparatus can be reliably prevented.

(5)
The second processing unit may further include a removal unit that removes the protective film after the substrate cleaning and drying processing by the first cleaning / drying processing unit and before the development processing of the substrate by the development processing unit.

  In this case, since the protective film is removed before the development process, the development process can be performed reliably. Thereby, it is possible to reliably prevent substrate processing defects in the development processing unit.

(6)
The first processing unit may further include a second cleaning / drying processing unit that performs cleaning and drying processing of the substrate after formation of the photosensitive film by the photosensitive film forming unit.

  In this case, a part of the components of the photosensitive film on the substrate is eluted during the substrate cleaning process in the second cleaning / drying processing unit. Thereby, even if the exposure process is performed in a state where the substrate is in contact with the liquid in the exposure apparatus, the components of the photosensitive film are prevented from being eluted into the liquid. As a result, contamination within the exposure apparatus can be reliably prevented.

  Further, in the second cleaning / drying processing unit, since the substrate is also dried, it is possible to prevent dust and the like in the atmosphere from adhering to the substrate before the exposure processing.

(7)
The second cleaning / drying processing unit may be provided adjacent to the exposure apparatus.

  In this case, since the substrate can be cleaned and dried by the second cleaning / drying processing unit immediately before the exposure process in the exposure apparatus, contamination in the exposure apparatus can be more reliably prevented.

(8)
The first processing unit may further include an antireflection film forming unit that forms an antireflection film on the substrate before forming the photosensitive film by the photosensitive film forming unit.

  In this case, since the antireflection film is formed on the substrate, standing waves and halation generated during the exposure process can be reduced.

(9)
The second processing unit may include a first processing unit including a first cleaning / drying processing unit and a first transport unit that transports the substrate.

  In this case, the substrate subjected to the exposure processing in the exposure apparatus is transported to the first cleaning / drying processing unit by the first transport unit. The substrate that has been cleaned and dried in the first cleaning / drying processing unit is transported to another adjacent processing unit by the first transporting unit.

  In this substrate processing apparatus, since the substrate is dried and cleaned in the first processing unit, it is possible to prevent the liquid attached to the substrate during the cleaning process from affecting other processing units. This facilitates temperature and humidity adjustment in other processing units. In addition, since dust or the like in the atmosphere is prevented from adhering to the substrate, it is possible to prevent substrate processing defects in other processing units.

(10)
The first processing unit may be arranged adjacent to the exposure apparatus.

  In this case, since the substrate can be cleaned and dried in the first processing unit immediately after the exposure processing, contamination of the substrate can be reliably prevented. Moreover, the influence which the liquid adhering to the board | substrate at the time of an exposure process has on the atmosphere of the other process unit of a 2nd process part can be prevented reliably.

(11)
The first transport unit includes first and second holding means for holding the substrate. The first transport unit is configured to transport the substrate after the cleaning and drying processing by the first cleaning / drying processing unit. The substrate may be held by the first holding means, and the substrate may be held by the second holding means when transporting the substrate before the cleaning and drying processing by the first cleaning / drying processing unit.

  In this case, since the first holding unit always holds the substrate after the drying process, the liquid of the substrate does not adhere to the first holding unit. This reliably prevents the liquid from adhering to the substrate again when the substrate after the drying processing by the first cleaning / drying processing unit is transported.

(12)
The second holding means may be provided below the first holding means.

  In this case, even if the liquid falls from the second holding means and the substrate held by the second holding means, the liquid does not adhere to the first holding means and the substrate held by the first holding means. This reliably prevents the liquid from adhering again to the substrate after the drying processing by the first cleaning / drying processing unit.

(13)
The first processing unit includes a photosensitive film forming unit that forms a photosensitive film made of a photosensitive material on a substrate, a heat treatment unit that performs heat treatment on the substrate, and a second processing unit that includes a second transport unit that transports the substrate. The second processing unit includes: a development processing unit that performs development processing of the substrate after the substrate cleaning and drying processing by the first cleaning / drying processing unit; a thermal processing unit that performs thermal processing on the substrate; and a third unit that transports the substrate You may further provide the 3rd processing unit containing a conveyance unit.

  In this case, in the second processing unit of the first processing unit, a photosensitive film is formed on the substrate by the photosensitive film forming unit. Thereafter, the substrate is transferred to the heat treatment unit by the second transfer unit, and the substrate is subjected to a predetermined heat treatment in the heat treatment unit. Thereafter, the substrate is transported to another adjacent processing unit by the second transport unit.

  Further, development processing is performed by the development processing unit in the third processing unit on the substrate that has been cleaned and dried in the first processing unit of the second processing unit. Thereafter, the substrate is transferred to the heat treatment unit by the third transfer unit, and the substrate is subjected to a predetermined heat treatment in the heat treatment unit.

  In this substrate processing apparatus, the substrate is cleaned and dried in the first processing unit before the development processing of the substrate is performed in the third processing unit. Thereby, contamination of the substrate before development processing can be prevented. As a result, it is possible to prevent substrate processing defects in the third processing unit.

(14)
The first processing unit includes a photosensitive film forming unit that forms a photosensitive film made of a photosensitive material on a substrate, a heat treatment unit that performs heat treatment on the substrate, and a second processing unit that includes a second transport unit that transports the substrate. And the second processing unit includes: a first cleaning / drying processing unit; a development processing unit that performs substrate development processing after the substrate cleaning and drying processing by the first cleaning / drying processing unit; and a heat treatment unit that performs heat treatment on the substrate. In addition, a fourth processing unit including a fourth transport unit for transporting the substrate may be provided.

  In this case, in the second processing unit of the first processing unit, a photosensitive film is formed on the substrate by the photosensitive film forming unit. Thereafter, the substrate is transferred to the heat treatment unit by the second transfer unit, and the substrate is subjected to a predetermined heat treatment in the heat treatment unit. Thereafter, the substrate is transported to another adjacent processing unit by the second transport unit.

  In the fourth processing unit of the second processing unit, the substrate is cleaned and dried by the first cleaning / drying processing unit. Thereafter, the substrate is transported to the development processing unit by the fourth transport unit, and the development processing of the substrate is performed in the development processing unit. Thereafter, the substrate is transferred to the heat treatment unit by the fourth transfer unit, and the substrate is subjected to a predetermined heat treatment in the heat treatment unit.

  In this substrate processing apparatus, after the substrate is cleaned and dried by the first cleaning / drying processing unit in the fourth processing unit of the second processing unit, the development processing unit performs the development processing of the substrate. Is called. Thereby, contamination of the substrate before development processing can be prevented. As a result, it is possible to prevent substrate processing defects in the fourth processing unit.

  In addition, since the substrate cleaning process, the drying process, and the developing process can be performed in one processing unit, the footprint of the substrate processing apparatus can be reduced.

(15)
The fourth processing unit may be arranged adjacent to the exposure apparatus.

  In this case, since the substrate can be cleaned and dried in the fourth processing unit immediately after the exposure processing, contamination of the substrate can be reliably prevented. Moreover, the influence which the liquid adhering to the board | substrate at the time of an exposure process has on the atmosphere of a 2nd process part can be prevented reliably.

(16)
The fourth transport unit includes third and fourth holding means for holding the substrate. When the fourth transport unit transports the substrate after the cleaning and drying processing by the first cleaning / drying processing unit, The substrate may be held by the third holding unit, and the substrate may be held by the fourth holding unit when transporting the substrate before the cleaning and drying processing by the first processing unit.

In this case, since the third holding unit always holds the substrate after the drying process, the liquid of the substrate does not adhere to the third holding unit. This reliably prevents the liquid from adhering to the substrate again when the substrate after the drying processing by the first cleaning / drying processing unit is transported.

(17)
The fourth holding means may be provided below the third holding means.

  In this case, even if the liquid falls from the fourth holding means and the substrate held by the fourth holding means, the liquid does not adhere to the third holding means and the substrate held by the third holding means. This reliably prevents the liquid from adhering again to the substrate after the drying processing by the first cleaning / drying processing unit.

(18)
The first processing unit further includes a fifth processing unit including a protective film forming unit that forms a protective film that protects the photosensitive film, a heat treatment unit that performs heat treatment on the substrate, and a fifth transport unit that transports the substrate. The fifth processing unit may be disposed between the second processing unit and the exposure apparatus.

  In this case, in the fifth processing unit disposed between the second processing unit and the exposure apparatus, a protective film is formed on the photosensitive film by the protective film forming unit. Thereafter, the substrate is transferred to the heat treatment unit by the fifth transfer unit, and the substrate is subjected to a predetermined heat treatment in the heat treatment unit.

  In this substrate processing apparatus, since the protective film is formed on the photosensitive film in the protective film forming unit of the fifth processing unit before the exposure processing, the exposure processing is performed with the substrate in contact with the liquid in the exposure apparatus. Even if it is broken, the components of the photosensitive film are prevented from eluting into the liquid. Thereby, contamination in the exposure apparatus can be reliably prevented.

(19)
The first processing section includes a second cleaning / drying processing unit for cleaning and drying the substrate after the photosensitive film is formed by the photosensitive film forming unit, and a sixth processing unit including a sixth transport unit for transporting the substrate. The unit may further include a sixth processing unit, and the sixth processing unit may be disposed between the second processing unit and the exposure apparatus.

  In this case, for the substrate on which the photosensitive film is formed by the photosensitive film forming unit of the second processing unit, the substrate is cleaned by the second cleaning / drying processing unit in the sixth processing unit before the exposure processing. And a drying process is performed.

  In this substrate processing apparatus, a part of the components of the photosensitive film on the substrate is eluted during the substrate cleaning process in the second cleaning / drying processing unit. Thereby, even if the exposure process is performed in a state where the substrate is in contact with the liquid in the exposure apparatus, the components of the photosensitive film are prevented from being eluted into the liquid. As a result, contamination within the exposure apparatus can be reliably prevented.

  Further, in the second cleaning / drying processing unit, since the substrate is also dried, it is possible to prevent dust and the like in the atmosphere from adhering to the substrate before the exposure processing.

(20)
The sixth processing unit may be disposed adjacent to the exposure apparatus.

  In this case, since the substrate can be cleaned and dried by the second cleaning / drying processing unit immediately before the exposure process in the exposure apparatus, contamination in the exposure apparatus can be more reliably prevented.

(21)
The first processing unit further includes a fifth processing unit including a protective film forming unit that forms a protective film that protects the photosensitive film, a heat treatment unit that performs heat treatment on the substrate, and a fifth transport unit that transports the substrate. The second processing unit includes a removal unit that removes the protective film after the substrate cleaning and drying processing by the first cleaning / drying processing unit and before the development processing of the substrate by the development processing unit. And a seventh processing unit including a unit and a seventh transport unit for transporting the substrate, wherein the fifth processing unit is disposed between the second processing unit and the exposure apparatus, and the seventh processing unit is , And may be arranged between the first processing unit and the third processing unit.

  In this case, in the fifth processing unit disposed between the second processing unit and the exposure apparatus, a protective film is formed on the photosensitive film by the protective film forming unit. Thereafter, the substrate is transferred to the heat treatment unit by the fifth transfer unit, and a predetermined heat treatment is performed in the heat treatment unit.

  In addition, a predetermined heat treatment is performed by the heat treatment unit in the seventh treatment unit arranged between the first treatment unit and the third treatment unit of the second treatment unit. Thereafter, the substrate is transported to the removal unit by the seventh transport unit, and the protective film is removed in the removal unit.

  In this substrate processing apparatus, since the protective film is formed on the photosensitive film in the protective film forming unit of the fifth processing unit before the exposure processing by the exposure apparatus, the exposure is performed with the substrate in contact with the liquid in the exposure apparatus. Even if the treatment is performed, the components of the photosensitive film are prevented from being eluted into the liquid. Thereby, contamination in the exposure apparatus can be reliably prevented.

  Further, since the protective film is removed by the removal unit of the seventh processing unit before the development processing of the substrate is performed in the third processing unit, the development processing can be reliably performed in the third processing unit. .

(22)
The first processing unit includes a photosensitive film forming unit that forms a photosensitive film made of a photosensitive material on a substrate, a heat treatment unit that performs heat treatment on the substrate, and a second processing unit that includes a second transport unit that transports the substrate. And a protective film forming unit that forms a protective film that protects the photosensitive film, a thermal processing unit that performs thermal processing on the substrate, and a fifth processing unit that includes a fifth transport unit that transports the substrate. The unit includes a first cleaning / drying processing unit, a removal unit for removing the protective film after the substrate cleaning and drying processing by the first cleaning / drying processing unit, a heat treatment unit for performing heat treatment on the substrate, and an eighth substrate transporting the substrate. An eighth processing unit including a transfer unit; a development processing unit for performing development processing on the substrate after removal of the protective film by the removal unit; and a heat treatment unit for performing thermal processing on the substrate And a third processing unit including a third transport unit for transporting the substrate, the fifth processing unit is disposed between the second processing unit and the exposure apparatus, and the eighth processing unit is It may be arranged between the exposure apparatus and the third processing unit.

  In this case, in the second processing unit of the first processing unit, a photosensitive film is formed on the substrate by the photosensitive film forming unit. Thereafter, the substrate is transferred to the heat treatment unit by the second transfer unit, and the substrate is subjected to a predetermined heat treatment in the heat treatment unit. Thereafter, the substrate is transported to another adjacent processing unit by the second transport unit.

  Next, in the fifth processing unit, a protective film is formed on the substrate by the protective film forming unit. Thereafter, the substrate is transferred to the heat treatment unit by the fifth transfer unit, and the substrate is subjected to predetermined processing in the heat treatment unit.

  Further, in the eighth processing unit of the second processing unit, the substrate is cleaned and dried by the first cleaning / drying processing unit. Thereafter, the substrate is transferred to the heat treatment unit by the eighth transfer unit, and the substrate is subjected to predetermined heat treatment in the heat treatment unit. Thereafter, the substrate is transported to the removal unit by the eighth transport unit, and the protective film is removed in the removal unit.

  Next, in the third processing unit, development processing of the substrate is performed by the development processing unit. Thereafter, the substrate is transferred to the heat treatment unit by the third transfer unit, and the substrate is subjected to a predetermined heat treatment in the heat treatment unit.

  In this substrate processing apparatus, since the protective film is formed on the photosensitive film in the protective film forming unit of the fifth processing unit before the exposure processing, the exposure processing is performed with the substrate in contact with the liquid in the exposure apparatus. Even if it is broken, the components of the photosensitive film are prevented from eluting into the liquid. Thereby, contamination in the exposure apparatus can be reliably prevented.

  In addition, since the substrate can be cleaned and dried by the first cleaning / drying processing unit of the eighth processing unit after the exposure processing, contamination of the substrate can be reliably prevented.

  In addition, since the protective film is removed by the removal unit of the eighth processing unit before the development processing of the substrate is performed in the third processing unit, the development processing can be reliably performed in the third processing unit. .

(23)
The eighth processing unit may be disposed adjacent to the exposure apparatus.

  In this case, since the substrate can be cleaned and dried in the eighth processing unit immediately after the exposure processing, contamination of the substrate can be reliably prevented.

(24)
The eighth transport unit includes fifth and sixth holding means for holding the substrate. When the eighth transport unit transports the substrate after the cleaning and drying processing by the first cleaning / drying processing unit, The substrate may be held by the fifth holding unit, and the substrate may be held by the sixth holding unit when transporting the substrate before the cleaning and drying processing by the first cleaning / drying processing unit.

  In this case, since the fifth holding means always holds the substrate after the drying process, the liquid of the substrate does not adhere to the fifth holding means. This reliably prevents the liquid from adhering to the substrate again when the substrate after the drying processing by the first cleaning / drying processing unit is transported.

(25)
The sixth holding means may be provided below the fifth holding means.

  In this case, even if the liquid falls from the sixth holding means and the substrate held by the sixth holding means, the liquid does not adhere to the fifth holding means and the substrate held by the fifth holding means. This reliably prevents the liquid from adhering again to the substrate after the drying processing by the first cleaning / drying processing unit.

(26)
The second cleaning / drying processing unit includes: a substrate holding unit that holds the substrate substantially horizontally; a rotation driving unit that rotates the substrate held by the substrate holding unit around an axis perpendicular to the substrate; and a substrate holding unit. A cleaning liquid supply unit that supplies a cleaning liquid onto the held substrate and an inert gas supply unit that supplies an inert gas onto the substrate after the cleaning liquid is supplied onto the substrate by the cleaning liquid supply unit may be provided.

  In the second cleaning / drying processing unit, the substrate is held substantially horizontally by the substrate holding means, and the substrate is rotated around an axis perpendicular to the substrate by the rotation driving means. Further, the cleaning liquid is supplied onto the substrate by the cleaning liquid supply means, and then the inert gas is supplied by the inert gas supply means.

  In this case, since the inert gas is supplied onto the substrate while rotating the substrate, the cleaning liquid remaining on the substrate after the cleaning of the substrate is efficiently removed. Thereby, a board | substrate can be dried reliably.

(27)
The inert gas supply means of the second cleaning / drying processing unit is inert so that the cleaning liquid supplied onto the substrate by the cleaning liquid supply means is removed from the substrate by moving outward from the center of the substrate. Gas may be supplied.

  In this case, since the cleaning liquid can be prevented from remaining in the central portion on the substrate, it is possible to reliably prevent the occurrence of dry spots on the surface of the substrate. As a result, it is possible to more reliably prevent substrate processing defects.

(28)
The second cleaning / drying processing unit includes a rinsing liquid supply means for supplying a rinsing liquid onto the substrate after the cleaning liquid is supplied by the cleaning liquid supply means and before the inert gas is supplied by the inert gas supply means. May be further provided.

  In this case, since the cleaning liquid can be reliably washed away by the rinse liquid, it is possible to prevent the foreign matter eluted in the cleaning liquid from remaining on the substrate. Thereby, the substrate can be reliably cleaned.

(29)
The inert gas supply means of the second cleaning / drying processing unit is configured so that the rinse liquid supplied onto the substrate by the rinse liquid supply means is removed from the substrate by moving outward from the central portion on the substrate. An inert gas may be supplied.

  In this case, since the rinsing liquid can be prevented from remaining in the central portion on the substrate, it is possible to reliably prevent the occurrence of dry spots on the surface of the substrate. As a result, it is possible to more reliably prevent substrate processing defects.

(30)
The first cleaning / drying processing unit includes: a substrate holding unit that holds the substrate substantially horizontally; a rotation driving unit that rotates the substrate held by the substrate holding unit around an axis perpendicular to the substrate; and a substrate holding unit. A cleaning liquid supply unit that supplies a cleaning liquid onto the held substrate and an inert gas supply unit that supplies an inert gas onto the substrate after the cleaning liquid is supplied onto the substrate by the cleaning liquid supply unit may be provided.

  In the first cleaning / drying processing unit, the substrate is held substantially horizontally by the substrate holding means, and the substrate is rotated around an axis perpendicular to the substrate by the rotation driving means. Further, the cleaning liquid is supplied onto the substrate by the cleaning liquid supply means, and then the inert gas is supplied by the inert gas supply means.

  In this case, since the inert gas is supplied onto the substrate while rotating the substrate, the cleaning liquid remaining on the substrate after the cleaning of the substrate is efficiently removed. Thereby, a board | substrate can be dried reliably.

(31)
The inert gas supply means of the first cleaning / drying processing unit is inert so that the cleaning liquid supplied onto the substrate by the cleaning liquid supply means is removed from the substrate by moving outward from the center of the substrate. Gas may be supplied.

  In this case, since the cleaning liquid can be prevented from remaining in the central portion on the substrate, it is possible to reliably prevent the occurrence of dry spots on the surface of the substrate. As a result, it is possible to more reliably prevent substrate processing defects.

(32)
The first cleaning / drying processing unit includes a rinsing liquid supply means for supplying a rinsing liquid onto the substrate after the cleaning liquid is supplied by the cleaning liquid supply means and before the inert gas is supplied by the inert gas supply means. May be further provided.

  In this case, since the cleaning liquid can be reliably washed away by the rinse liquid, it is possible to prevent the foreign matter eluted in the cleaning liquid from remaining on the substrate. Thereby, the substrate can be reliably cleaned.

(33)
The inert gas supply means of the first cleaning / drying processing unit is configured so that the rinse liquid supplied onto the substrate by the rinse liquid supply means is removed from the substrate by moving outward from the center of the substrate. An inert gas may be supplied.

  In this case, since the rinsing liquid can be prevented from remaining in the central portion on the substrate, it is possible to reliably prevent the occurrence of dry spots on the surface of the substrate. As a result, it is possible to more reliably prevent substrate processing defects.

(34)
The first processing unit includes an antireflection film forming unit that forms an antireflection film on the substrate before forming the photosensitive film by the photosensitive film forming unit, a heat treatment unit that performs heat treatment on the substrate, and a ninth transport that transports the substrate. You may further provide the 9th process unit containing a unit.

  In this case, in the ninth processing unit of the first processing unit, the antireflection film is formed on the substrate by the antireflection film forming unit. Thereafter, the substrate is transferred to the heat treatment unit by the ninth transfer unit, and the substrate is subjected to a predetermined heat treatment in the heat treatment unit. Thereafter, the substrate is transported to another processing unit by the ninth transport unit.

  In this substrate processing apparatus, before the photosensitive film is formed on the substrate in the photosensitive film forming unit of the second processing unit, the antireflection film is formed on the substrate in the antireflection film forming unit of the ninth processing unit. Is formed. Thereby, standing waves and halation generated during the exposure process can be reduced.

  According to the present invention, since the substrate after the exposure process is not processed in the first processing unit, even if a liquid adheres to the substrate during the exposure process, the liquid may affect the atmosphere of the first processing unit. Absent. This facilitates temperature and humidity adjustment of the first processing unit.

  In addition, since the liquid adhering to the substrate during the exposure process is prevented from falling into the first processing unit, it is possible to prevent malfunction such as an abnormality in the electrical system of the substrate processing apparatus.

  Further, the liquid adhering to the substrate during the exposure process is also prevented from adhering to the substrate before the exposure process. This prevents dust in the atmosphere from adhering to the substrate before the exposure process, so that it is possible to prevent degradation in resolution performance during the exposure process. Further, by preventing dust and the like from adhering to the substrate before the exposure processing, contamination in the exposure apparatus can be prevented.

  In addition, since the first cleaning / drying processing unit cleans the substrate after the exposure processing, even if dust or the like in the atmosphere adheres to the substrate to which the liquid has adhered during the exposure processing after the exposure processing, Can be removed.

  Further, since the substrate after the exposure processing is dried in the first cleaning / drying processing unit, it is possible to prevent dust and the like in the atmosphere from adhering to the substrate after the exposure processing. Thereby, the contamination of the substrate after the exposure processing can be prevented.

  Further, by drying the substrate after the exposure processing, it is possible to prevent the liquid attached to the substrate during the exposure processing from affecting the atmosphere in the second processing unit. Thereby, temperature and humidity adjustment in the second processing unit is facilitated.

  In addition, since the liquid adhering to the substrate during the exposure process is prevented from falling into the second processing unit, it is possible to prevent malfunction such as an abnormality in the electrical system of the substrate processing apparatus.

  As a result, it becomes possible to sufficiently prevent processing defects of the substrate.

  Hereinafter, a substrate processing apparatus according to an embodiment of the present invention will be described with reference to the drawings. In the following description, the substrate refers to a semiconductor substrate, a liquid crystal display substrate, a plasma display substrate, a photomask glass substrate, an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, a photomask substrate, and the like. Say.

  Further, in the following drawings, arrows indicating the X direction, the Y direction, and the Z direction orthogonal to each other are attached in order to clarify the positional relationship. The X direction and the Y direction are orthogonal to each other in the horizontal plane, and the Z direction corresponds to the vertical direction. In each direction, the direction in which the arrow points is the + direction, and the opposite direction is the-direction. Further, the rotation direction around the Z direction is defined as the θ direction.

(First embodiment)
A substrate processing apparatus according to a first embodiment of the present invention will be described below with reference to FIGS.

  FIG. 1 is a schematic plan view of a substrate processing apparatus according to a first embodiment of the present invention.

  As shown in FIG. 1, in the substrate processing apparatus 500, along the Y direction, an indexer block 9, an antireflection film processing block 10, a resist film processing block 11, a resist cover film processing block 12, the first The interface block 13, the external device installation block 14, the second interface block 15, the cleaning / drying processing block 16, the cover film removal block 17, the development processing block 18, and the first transport block 19 are arranged in order. Moreover, the 2nd conveyance block 20 is arrange | positioned so that the one side surface along the Y direction of all these blocks 9-19 may be contact | connected. In the present embodiment, an exposure apparatus STP is arranged in the external apparatus installation block 14. In the exposure apparatus STP, the exposure processing of the substrate W is performed by a liquid immersion method.

  The indexer block 9 includes a main controller (control unit) 91 that controls the operation of each block, a plurality of carrier platforms 92, and an indexer robot IR. In the indexer robot IR, hands IRH1 and IRH2 for delivering the substrate W are provided above and below.

  The antireflection film processing block 10 includes antireflection film heat treatment units 100 and 101, an antireflection film coating processing unit 30, and a first central robot CR1. The antireflection film coating treatment unit 30 is provided to face the antireflection film heat treatment units 100 and 101 with the first central robot CR1 interposed therebetween. The first center robot CR1 is provided with hands CRH1 and CRH2 for transferring the substrate W up and down.

  A partition wall 21 is provided between the indexer block 9 and the anti-reflection film processing block 10 for shielding the atmosphere. The partition wall 21 is provided with a substrate platform PASS1 for delivering the substrate W between the indexer block 9 and the antireflection film processing block 10.

  The substrate platform PASS1 is provided with an optical sensor (not shown) that detects the presence or absence of the substrate W. Accordingly, it is possible to determine whether or not the substrate W is placed on the substrate platform PASS1. The substrate platform PASS1 is provided with a plurality of support pins fixedly installed. The optical sensor and the support pin are also provided in the same manner on the substrate platforms PASS2 to PASS13 described later.

  The resist film processing block 11 includes resist film heat treatment units 110 and 111, a resist film coating processing unit 40, and a second central robot CR2. The resist film application processing unit 40 is provided to face the resist film heat treatment units 110 and 111 with the second central robot CR2 interposed therebetween. The second center robot CR2 is provided with hands CRH3 and CRH4 for transferring the substrate W up and down.

  A partition wall 22 is provided between the antireflection film processing block 10 and the resist film processing block 11 for shielding the atmosphere. The partition wall 22 is provided with a substrate platform PASS 2 for transferring the substrate W between the antireflection film processing block 10 and the resist film processing block 11.

  The resist cover film processing block 12 includes resist cover film heat treatment sections 120 and 121, a resist cover film coating processing section 50, and a third central robot CR3. The resist cover film heat treatment section 121 is adjacent to the first interface block 13 and includes a substrate platform PASS4 as described later. The resist cover film coating processing section 50 is provided to face the resist cover film heat treatment sections 120 and 121 with the third central robot CR3 interposed therebetween. The third center robot CR3 is provided with hands CRH5 and CRH6 for transferring the substrate W up and down.

  A partition wall 23 is provided between the resist film processing block 11 and the resist cover film processing block 12 for shielding the atmosphere. The partition wall 23 is provided with a substrate platform PASS 3 for transferring the substrate W between the resist film processing block 11 and the resist cover film processing block 12.

  The first interface block 13 includes a fourth central robot CR4, a feed buffer unit SBF, a first interface transport mechanism IFR1, and an edge exposure unit EEW. A substrate platform PASS5 is provided below the edge exposure unit EEW. The fourth central robot CR4 is provided with hands CRH7 and CRH8 for delivering the substrate W up and down, and the first interface transport mechanism IFR1 is provided with a hand H1 for delivering the substrate W.

  An external device is arranged in the external device installation block 14. In the present embodiment, the exposure apparatus STP is arranged as described above.

  The second interface block 15 includes a second interface transport mechanism IFR2. The second interface transport mechanism IFR2 is provided with a hand H2 for delivering the substrate W.

  The cleaning / drying processing block 16 includes cleaning / drying processing units 60a and 60b and a fifth central robot CR5. The cleaning / drying processing units 60a and 60b are provided to face each other with the fifth center robot CR5 interposed therebetween. The fifth center robot CR5 is provided with hands CRH9 and CRH10 for transferring the substrate W up and down.

  A partition wall 24 is provided between the second interface block 15 and the cleaning / drying processing block 16 for shielding the atmosphere. The partition wall 24 is provided with a substrate platform PASS 6 for transferring the substrate W between the second interface block 15 and the cleaning / drying processing block 16.

  The resist cover film removal block 17 includes post-exposure bake (PEB) heat treatment units 170 and 171, a resist cover film removal processing unit 70, and a sixth central robot CR6. The resist cover film removal processing unit 70 is provided to face the post-exposure baking heat treatment units 170 and 171 with the sixth central robot CR6 interposed therebetween. The sixth center robot CR6 is provided with hands CRH11 and CRH12 for transferring the substrate W up and down.

  A partition wall 25 is provided between the cleaning / drying processing block 16 and the resist cover film removal block 17 for shielding the atmosphere. The partition wall 25 is provided with a substrate platform PASS 7 for transferring the substrate W between the cleaning / drying processing block 16 and the resist cover film removal block 17.

  The development processing block 18 includes development heat treatment units 180 and 181, a development processing unit 80, and a seventh central robot CR7. The development processing unit 80 is provided to face the development heat treatment units 180 and 181 with the seventh central robot CR7 interposed therebetween. The seventh center robot CR7 is provided with hands CRH13 and CRH14 for transferring the substrate W up and down.

  A partition wall 26 is provided between the resist cover film removal block 17 and the development processing block 18 for shielding the atmosphere. The partition wall 26 is provided with a substrate platform PASS 8 for transferring the substrate W between the resist cover film removal block 17 and the development processing block 18.

  The first transfer block 19 includes a first transfer robot TR1. The first transport robot TR1 is provided with a hand TRH1 for delivering the substrate W.

  A partition wall 27 for shielding the atmosphere is provided between the development processing block 18 and the first transport block 19. The partition wall 27 is provided with a substrate platform PASS 9 for transferring the substrate W between the development processing block 18 and the first transport block 19.

  The second transfer block 20 includes a second transfer robot TR2. The second transport robot TR2 is provided with a hand TRH2 for delivering the substrate W.

  Between the first transfer block 19 and the second transfer block 20, there is a substrate platform PASS10 for transferring the substrate W between the first transfer block 19 and the second transfer block 20. Provided. In addition, a substrate platform PASS 11 for delivering the substrate W between the second transport block 20 and the indexer block 9 is provided between the second transport block 20 and the indexer block 9.

  FIG. 2 is a side view of the substrate processing apparatus 500 of FIG. 1 viewed from the + X direction. In FIG. 2, the second transport block 20 is not shown.

  In the antireflection film coating processing section 30 (see FIG. 1) of the antireflection film processing block 10, three coating units BARC are stacked in a vertical direction. Each coating unit BARC includes a spin chuck 31 that rotates by attracting and holding the substrate W in a horizontal posture, and a supply nozzle 32 that supplies a coating liquid for an antireflection film to the substrate W held on the spin chuck 31.

  In the resist film coating processing section 40 (see FIG. 1) of the resist film processing block 11, three coating units RES are vertically stacked. Each coating unit RES includes a spin chuck 41 that rotates while adsorbing and holding the substrate W in a horizontal posture, and a supply nozzle 42 that supplies a coating liquid for a resist film to the substrate W held on the spin chuck 41.

  In the resist cover film coating processing section 50 (see FIG. 1) of the resist cover film processing block 12, three coating units COV are stacked in a vertical direction. Each coating unit COV includes a spin chuck 51 that rotates while adsorbing and holding the substrate W in a horizontal posture, and a supply nozzle 52 that supplies a coating liquid for the resist cover film to the substrate W held on the spin chuck 71. As a coating solution for the resist cover film, a material having a low affinity with the resist and water (a material having low reactivity with the resist and water) can be used. For example, a fluororesin. The coating unit COV forms a resist cover film on the resist film formed on the substrate W by applying a coating liquid onto the substrate W while rotating the substrate W.

  In the first interface block 13, two edge exposure units EEW and a substrate platform PASS512 are stacked one above the other, a fourth central robot CR4 (see FIG. 1), and a first interface transport mechanism. IFR1 is arranged. Each edge exposure unit EEW includes a spin chuck 131 that rotates by sucking and holding the substrate W in a horizontal posture, and a light irradiator 132 that exposes the periphery of the substrate W held on the spin chuck 131.

  In the second interface block 15, a second interface transport mechanism IFR2 is arranged.

  In the cleaning / drying processing unit 60a of the cleaning / drying processing block 16 (see FIG. 1), three cleaning / drying processing units SD are stacked and arranged. The cleaning / drying processing unit SD will be described later.

  In the resist cover film removal processing unit 70 (see FIG. 1) of the resist cover film removal block 17, three removal units REM are arranged. Each removal unit REM includes a spin chuck 71 that rotates while adsorbing and holding the substrate W in a horizontal posture, and a supply nozzle 72 that supplies a peeling liquid (for example, a fluororesin) to the substrate W held on the spin chuck 71. The removal unit REM removes the resist cover film formed on the substrate W by applying a stripping solution onto the substrate W while rotating the substrate W.

  The method for removing the resist cover film in the removal unit REM is not limited to the above example. For example, the resist cover film may be removed by supplying a stripping solution onto the substrate W while moving the slit nozzle above the substrate W.

  In the development processing unit 80 (see FIG. 1) of the development processing block 18, five development processing units DEV are stacked one above the other. Each development processing unit DEV includes a spin chuck 81 that rotates while adsorbing and holding the substrate W in a horizontal posture, and a supply nozzle 82 that supplies the developer to the substrate W held on the spin chuck 81.

  In the first transfer block 19, the first transfer robot TR1 is arranged.

  FIG. 3 is a side view of the substrate processing apparatus 500 of FIG. 1 viewed from the −X direction.

  In the antireflection film heat treatment section 100 of the antireflection film processing block 10, two heating units (hot plates) HP and two cooling units (cooling plates) CP are stacked, and the antireflection film heat treatment section is arranged. In 101, two heating units HP and two cooling units CP are stacked one above the other. Further, in the heat treatment units 100 and 101 for the antireflection film, local controllers LC for controlling the temperatures of the cooling unit CP and the heating unit HP are arranged at the top.

  In the resist film heat treatment section 110 of the resist film processing block 11, two heating units HP and two cooling units CP are stacked one above the other, and the resist film heat treatment section 11 has two heating units. HP and two cooling units CP are stacked one above the other. In addition, in the resist film heat treatment units 110 and 111, local controllers LC for controlling the temperatures of the cooling unit CP and the heating unit HP are respectively arranged at the top.

  In the resist cover film heat treatment section 120 of the resist cover film processing block 12, two heating units HP and two cooling units CP are stacked one above the other, and the resist cover film heat treatment section 121 is mounted on the substrate. The placement unit PASS4, two heating units HP, and two cooling units CP are stacked one above the other. In addition, in the resist cover film heat treatment sections 120 and 121, local controllers LC for controlling the temperatures of the cooling unit CP and the heating unit HP are arranged at the top.

  In the cleaning / drying processing unit 60b (see FIG. 1) of the cleaning / drying processing block 16, three cleaning / drying processing units SD are stacked and arranged in the same manner as the above-described cleaning / drying processing unit 60a.

  In the post-exposure bake heat treatment section 170 of the resist cover film removal block 17, two heating units HP and two cooling units CP are stacked one above the other, and the post-exposure bake heat treatment section 171 includes two pieces. The heating unit HP, the substrate platform PASS5, and the two cooling units CP are stacked one above the other. In addition, in the post-exposure bake heat treatment units 170 and 171, local controllers LC for controlling the temperatures of the cooling unit CP and the heating unit HP are arranged at the top.

  The development heat treatment section 180 of the development processing block 18 has two heating units HP and two cooling units CP stacked one above the other, and the development heat treatment section 181 has two heating units HP and two. The cooling units CP are stacked one above the other. Further, in the development heat treatment sections 180 and 181, the local controllers LC for controlling the temperatures of the cooling unit CP and the heating unit HP are respectively arranged at the top.

  Next, the operation of the substrate processing apparatus 500 according to this embodiment will be described.

  On the carrier mounting table 92 of the indexer block 9, a carrier C that stores a plurality of substrates W in multiple stages is loaded. The indexer robot IR takes out the unprocessed substrate W stored in the carrier C using the upper hand IRH1. Thereafter, the indexer robot IR rotates in the ± θ direction while moving in the ± X direction, and places the unprocessed substrate W on the substrate platform PASS1.

  In the present embodiment, a front opening unified pod (FOUP) is adopted as the carrier C. However, the present invention is not limited to this, and an OC (open cassette) that exposes the standard mechanical interface (SMIF) pod and the storage substrate W to the outside air. ) Etc. may be used. Further, the indexer robot IR, the first to seventh center robots CR1 to CR7, the first and second interface transport mechanisms IFR1 and IFR2, and the first and second transport robots TR1 and TR2 are each provided with a substrate W. However, the present invention is not limited to this, and it is not limited to this, but it is a multi-joint type transport that moves the joint linearly by moving the joint. A robot may be used.

  The unprocessed substrate W placed on the substrate platform PASS1 is received by the first central robot CR1 of the antireflection film processing block 10. The first center robot CR1 carries the substrate W into the antireflection film heat treatment units 100 and 101. Thereafter, the first central robot CR1 takes out the heat-treated substrate W from the antireflection film heat treatment units 100 and 101, and carries the substrate W into the antireflection film application processing unit 30. In the antireflection film coating processing unit 30, an antireflection film is applied and formed on the substrate W by the coating unit BARC in order to reduce standing waves and halation generated during exposure.

  Thereafter, the first central robot CR1 takes out the substrate W that has been coated from the coating processing section 30 for the antireflection film, and carries the substrate W into the thermal processing sections 100 and 101 for the antireflection film. Next, the first central robot CR1 takes out the heat-treated substrate W from the antireflection film heat treatment units 100 and 101, and places the substrate W on the substrate platform PASS2.

  The substrate W placed on the substrate platform PASS2 is received by the second central robot CR2 of the resist film processing block 11. The second center robot CR2 carries the substrate W into the resist film application processing unit 40. In the resist film application processing unit 40, a resist film is applied and formed on the substrate W on which the antireflection film is applied and formed by the application unit RES.

  Thereafter, the second central robot CR2 takes out the coated substrate W from the resist film coating processing unit 40, and carries the substrate W into the resist film thermal processing units 110 and 111. Next, the second central robot CR2 takes out the heat-treated substrate W from the resist film heat treatment units 110 and 111, and places the substrate W on the substrate platform PASS3.

  The substrate W placed on the substrate platform PASS3 is received by the third central robot CR3 of the resist cover film processing block 12. The third central robot CR3 carries the substrate W into the resist cover film heat treatment sections 120 and 121. Thereafter, the third central robot CR3 takes out the heat-treated substrate W from the resist cover film heat treatment sections 120 and 121, and carries the substrate W into the resist cover film coating processing section 50. In the resist cover film coating processing section 50, as described above, the resist cover film is formed on the resist film by the coating unit COV.

  Thereafter, the third central robot CR3 takes out the coated substrate W from the resist cover film coating processing unit 50 and carries the substrate W into the resist cover film heat treatment units 120 and 121. Next, the third central robot CR3 takes out the substrate W after the heat treatment from the resist cover film heat treatment units 120 and 121, and places the substrate W on the substrate platform PASS4 provided in the resist cover film heat treatment unit 121. Place.

  The substrate W placed on the substrate platform PASS4 is received by the fourth central robot CR4 of the first interface block 14. The fourth central robot CR4 carries the substrate W into the edge exposure unit EEW. In the edge exposure unit EEW, the peripheral portion of the substrate W is subjected to exposure processing.

  Next, the fourth central robot CR4 takes out the substrate W after the edge exposure processing from the edge exposure unit EEW and places the substrate W on the substrate platform PASS5.

  The substrate W placed on the substrate platform PASS5 is received by the first interface transport mechanism IFR1. The first interface transport mechanism IFR1 carries the substrate W into the exposure apparatus STP. When the exposure apparatus STP cannot accept the substrate W, the substrate W is temporarily stored in the sending buffer unit SBF.

  The substrate W that has been subjected to the exposure processing in the exposure apparatus STP is received by the second interface transport mechanism IFR2 of the second interface block 15. The second interface transport mechanism IFR2 places the substrate W on the substrate platform PASS6.

  The substrate W placed on the substrate platform PASS6 is received by the hand CRH10 below the fifth central robot CR5 of the cleaning / drying processing block 16. The fifth central robot CR5 carries the substrate W into the cleaning / drying processing units 60a and 60b. In the cleaning / drying processing units 60a and 60b, the cleaning / drying processing unit SD performs cleaning and drying processing of the substrate W. Details of the cleaning / drying processing unit SD will be described later.

  Thereafter, the fifth central robot CR5 takes out the processed substrate W from the cleaning / drying processing units 60a and 60b with the upper hand CRH9 and places the substrate W on the substrate platform PASS7.

  The substrate W placed on the substrate platform PASS7 is received by the sixth central robot CR6 of the resist cover film removal block 17. The sixth central robot CR6 carries the substrate W into the post-exposure baking heat treatment units 170 and 171. In the post-exposure baking heat treatment units 170 and 171, post-exposure baking (PEB) is performed on the substrate W.

  Next, the sixth central robot CR6 takes out the heat-treated substrate W from the post-exposure baking heat treatment units 170 and 171 and carries the substrate W into the resist cover film removal processing unit 70. In the resist cover film removal processing unit 70, the resist cover film is removed by the removal unit REM as described above.

  Thereafter, the sixth central robot CR6 takes out the processed substrate W from the resist cover film removal processing unit 70 and places the substrate W on the substrate platform PASS8.

  The substrate W placed on the substrate platform PASS8 is received by the seventh central robot CR7 of the development processing block 18. The seventh central robot CR7 carries the substrate W into the development processing unit 80. In the development processing unit 80, development processing of the substrate W is performed by the development processing unit DEV.

  Thereafter, the seventh central robot CR7 takes out the development-processed substrate W from the development processing unit 80, and carries the substrate into the development heat treatment units 180 and 181. Next, the seventh central robot CR7 takes out the heat-treated substrate W from the development heat treatment units 180 and 181, and places the substrate W on the substrate platform PASS9.

  The substrate W placed on the substrate platform PASS9 is received by the first transport robot TR1 of the first transport block 19. After receiving the substrate W, the first transport robot TR1 moves in the + X direction and places the substrate W on the substrate platform PASS10.

  The substrate W placed on the substrate platform PASS10 is received by the second transport robot TR2 of the second transport block 20. After receiving the substrate W, the second transfer robot TR2 moves in the −Y direction and places the substrate W on the substrate platform PASS11.

  The substrate W placed on the substrate platform PASS11 is received by the lower hand IRH2 of the indexer robot IR of the indexer block 9. The indexer robot IR stores the substrate W in the carrier C. Thereby, each process of the board | substrate W in the substrate processing apparatus 500 is complete | finished.

  Here, the cleaning / drying processing unit SD will be described in detail with reference to the drawings.

  First, the configuration of the cleaning / drying processing unit SD will be described. FIG. 4 is a diagram for explaining the configuration of the cleaning / drying processing unit SD.

  As shown in FIG. 4, the cleaning / drying processing unit SD includes a spin chuck 621 for holding the substrate W horizontally and rotating the substrate W about a vertical rotation axis passing through the center of the substrate W.

  The spin chuck 621 is fixed to the upper end of the rotation shaft 625 rotated by the chuck rotation drive mechanism 636. In addition, the spin chuck 621 is formed with an intake path (not shown), and the substrate W is placed on the spin chuck 621 to exhaust the inside of the intake path so that the lower surface of the substrate W is covered with the spin chuck 621. The substrate W can be held in a horizontal posture.

  A first rotation motor 660 is provided outside the spin chuck 621. A first rotation shaft 661 is connected to the first rotation motor 660. A first arm 662 is connected to the first rotation shaft 661 so as to extend in the horizontal direction, and a cleaning nozzle 650 is provided at the tip of the first arm 662.

  The first rotation shaft 661 is rotated by the first rotation motor 660 and the first arm 662 is rotated, so that the cleaning nozzle 650 is moved above the substrate W held by the spin chuck 621.

  A cleaning treatment supply pipe 663 is provided so as to pass through the first rotation motor 660, the first rotation shaft 661, and the first arm 662. The cleaning processing supply pipe 663 is connected to the cleaning liquid supply source R1 and the rinsing liquid supply source R2 via the valves Va and Vb. By controlling the opening and closing of the valves Va and Vb, the processing liquid supplied to the cleaning processing supply pipe can be selected and the supply amount can be adjusted. In the configuration of FIG. 4, the cleaning liquid can be supplied to the cleaning processing supply pipe 663 by opening the valve Va, and the rinsing liquid can be supplied to the cleaning processing supply pipe 663 by opening the valve Vb. it can.

  The cleaning liquid or the rinse liquid is supplied to the cleaning process nozzle 650 from the cleaning liquid supply source R1 or the rinse liquid supply source R2 through the cleaning process supply pipe 663. Thereby, the cleaning liquid or the rinsing liquid can be supplied to the surface of the substrate W. As the cleaning liquid, for example, pure water, a liquid obtained by dissolving a complex (ionized) in pure water, a fluorine-based chemical liquid, or the like is used. As the rinsing liquid, for example, pure water, carbonated water, hydrogen water, electrolytic ion water, or HFE (hydrofluoroether) is used.

  A second rotation motor 671 is provided outside the spin chuck 621. A second rotation shaft 672 is connected to the second rotation motor 671. A second arm 673 is connected to the second rotating shaft 672 so as to extend in the horizontal direction, and a drying processing nozzle 670 is provided at the tip of the second arm 673.

  The second rotation shaft 672 is rotated by the second rotation motor 671 and the second arm 673 is rotated, so that the drying processing nozzle 670 moves above the substrate W held by the spin chuck 21.

  A drying treatment supply pipe 674 is provided so as to pass through the inside of the second rotation motor 671, the second rotation shaft 672, and the second arm 673. The drying processing supply pipe 674 is connected to an inert gas supply source R3 via a valve Vc. By controlling the opening and closing of the valve Vc, the supply amount of the inert gas supplied to the drying treatment supply pipe 674 can be adjusted.

The inert gas is supplied to the drying processing nozzle 670 from the inert gas supply source R3 through the drying processing supply pipe 674. Thereby, an inert gas can be supplied to the surface of the substrate W. For example, nitrogen gas (N ₂ ) is used as the inert gas.

  When supplying the cleaning liquid or the rinsing liquid to the surface of the substrate W, the cleaning processing nozzle 650 is positioned above the substrate. When supplying the inert gas to the surface of the substrate W, the cleaning processing nozzle 650 is Retreated to a predetermined position.

  Further, when supplying the cleaning liquid or the rinsing liquid to the surface of the substrate W, the drying processing nozzle 670 is retracted to a predetermined position, and when supplying the inert gas to the surface of the substrate W, the drying processing nozzle 670 is located above the substrate W.

  The substrate W held on the spin chuck 621 is accommodated in the processing cup 623. A cylindrical partition wall 633 is provided inside the processing cup 623. A drainage space 631 for draining the processing liquid (cleaning liquid or rinsing liquid) used for processing the substrate W is formed so as to surround the periphery of the spin chuck 621. Further, a recovery liquid space 632 for recovering the processing liquid used for processing the substrate W is formed between the processing cup 623 and the partition wall 633 so as to surround the drainage space 631.

  The drainage space 631 is connected to a drainage pipe 634 for guiding the processing liquid to a drainage processing apparatus (not shown), and the recovery liquid space 632 is supplied with the processing liquid to the recovery processing apparatus (not shown). A collection pipe 635 for guiding is connected.

  A guard 624 for preventing the processing liquid from the substrate W from splashing outward is provided above the processing cup 623. The guard 624 has a rotationally symmetric shape with respect to the rotation shaft 625. A drainage guide groove 641 having a square cross section is formed in an annular shape on the inner surface of the upper end portion of the guard 624.

  In addition, a recovery liquid guide portion 642 is formed on the inner surface of the lower end portion of the guard 624. The recovery liquid guide portion 642 includes an inclined surface that is inclined outward and downward. A partition wall storage groove 643 for receiving the partition wall 633 of the processing cup 623 is formed near the upper end of the recovered liquid guide portion 642.

  The guard 624 is provided with a guard lifting / lowering drive mechanism (not shown) configured by a ball screw mechanism or the like. The guard lifting / lowering drive mechanism includes a guard 624, a recovery position where the recovery liquid guide portion 642 faces the outer peripheral end surface of the substrate W held by the spin chuck 621, and the substrate W where the drainage guide groove 641 is held by the spin chuck 621. The liquid is moved up and down with respect to the drainage position facing the outer peripheral end face. When the guard 624 is at the recovery position (the guard position shown in FIG. 4), the processing liquid splashed outward from the substrate W is guided to the recovery liquid space 632 by the recovery liquid guide 642 and recovered through the recovery pipe 635. Is done. On the other hand, when the guard 624 is at the drainage position, the processing liquid splashed outward from the substrate W is guided to the drainage space 631 by the drainage guide groove 641 and drained through the drainage pipe 634. With the above configuration, the processing liquid is drained and collected.

  Next, the processing operation of the cleaning / drying processing unit SD having the above configuration will be described. The operation of each component of the cleaning / drying processing unit SD described below is controlled by the control unit 91 of FIG.

  First, when the substrate W is carried in, the guard 624 is lowered, and the fifth central robot CR5 in FIG. 1 places the substrate W on the spin chuck 621. The substrate W placed on the spin chuck 621 is sucked and held by the spin chuck 621.

  Next, the guard 624 moves to the waste liquid position described above, and the cleaning nozzle 650 moves above the center of the substrate W. Thereafter, the rotating shaft 625 rotates, and the substrate W held by the spin chuck 621 rotates with this rotation. Thereafter, the cleaning liquid is discharged from the cleaning nozzle 650 onto the upper surface of the substrate W. Thereby, the substrate W is cleaned.

  After a predetermined time has elapsed, the supply of the cleaning liquid is stopped, and the rinsing liquid is discharged from the cleaning processing nozzle 650. Thereby, the cleaning liquid on the substrate W is washed away.

  Further, after a predetermined time has elapsed, the rotational speed of the rotating shaft 625 decreases. As a result, the amount of the rinsing liquid shaken off by the rotation of the substrate W is reduced, and the liquid layer L of the rinsing liquid is formed on the entire surface of the substrate W as shown in FIG. Note that the rotation of the rotation shaft 625 may be stopped to form the liquid layer L over the entire surface of the substrate W.

  In the present embodiment, the cleaning liquid processing nozzle 650 is commonly used for supplying the cleaning liquid and the rinsing liquid so that both the cleaning liquid and the rinsing liquid can be supplied from the cleaning liquid processing nozzle 650. A configuration in which the cleaning liquid supply nozzle and the rinsing liquid supply nozzle are separately provided may be employed.

  Further, when supplying the rinsing liquid, pure water may be supplied from a back rinsing nozzle (not shown) to the back surface of the substrate W so that the rinsing liquid does not flow around the back surface of the substrate W.

  When pure water is used as a cleaning liquid for cleaning the substrate W, it is not necessary to supply a rinsing liquid.

  Next, the supply of the rinsing liquid is stopped, the cleaning processing nozzle 650 is retracted to a predetermined position, and the drying processing nozzle 670 is moved above the center of the substrate W. Thereafter, an inert gas is discharged from the drying processing nozzle 670. As a result, as shown in FIG. 5B, the rinse liquid at the center of the substrate W moves to the peripheral edge of the substrate W, and the liquid layer L exists only at the peripheral edge of the substrate W.

  Next, as the rotational speed of the rotating shaft 625 (see FIG. 4) increases, the drying processing nozzle 670 gradually moves from above the central portion of the substrate W to above the peripheral portion as shown in FIG. 5C. . As a result, a large centrifugal force acts on the liquid layer L on the substrate W, and an inert gas can be blown over the entire surface of the substrate W, so that the liquid layer L on the substrate W can be reliably removed. As a result, the substrate W can be reliably dried.

  Next, the supply of the inert gas is stopped, the drying processing nozzle 670 is retracted to a predetermined position, and the rotation of the rotating shaft 625 is stopped. Thereafter, the guard 624 is lowered and the fifth central robot CR5 in FIG. 1 carries the substrate W out of the cleaning / drying processing unit SD. Thereby, the processing operation in the cleaning / drying processing unit SD is completed. Note that the position of the guard 624 during the cleaning and drying process is preferably changed as appropriate according to the need for the recovery of the processing liquid or the waste liquid.

  As described above, in the substrate processing apparatus 500 according to the present embodiment, the substrate W to which the liquid has adhered during the exposure processing is the first interface block 13, the resist cover film processing block 12, and the resist film processing block 11. In addition, the antireflection film processing block 10 is not transported. In this case, the liquid adhering to the substrate W does not affect the atmosphere in these blocks 10 to 13. Thereby, the temperature and humidity adjustment in those blocks 10-13 becomes easy.

  Further, the liquid adhering to the substrate W during the exposure process is prevented from falling into the first interface block 13, the resist cover film processing block 12, the resist film processing block 11, and the antireflection film processing block 10. Therefore, it is possible to prevent malfunction such as an abnormality in the electrical system of the substrate processing apparatus 500.

  Further, the liquid adhering to the substrate W during the exposure processing is provided in the antireflection film processing block 10, the resist film processing block 11, the resist cover film processing block 12, and the first interface block 13, respectively. Since there is no adhesion to the four center robots CR1 to CR4 and the first interface transport mechanism IFR1, no liquid adheres to the substrate W before the exposure process. This prevents dust in the atmosphere from adhering to the substrate W before the exposure process, so that it is possible to prevent the resolution performance from being deteriorated during the exposure process. Further, by preventing dust or the like in the atmosphere from adhering to the substrate W before the exposure processing, contamination in the exposure apparatus STP can be prevented.

  In addition, after the exposure processing is performed on the substrate W in the exposure apparatus STP, the cleaning processing of the substrate W is performed by the cleaning / drying processing unit SD of the cleaning / drying processing block 16. In this case, even if dust or the like in the atmosphere adheres to the substrate W to which the liquid has adhered during the exposure process, the adhered substance can be removed in the cleaning / drying processing unit SD.

  In the cleaning / drying processing unit SD, the substrate W is dried after the cleaning. Thereby, it is possible to prevent dust and the like in the atmosphere from adhering to the cleaned substrate W again. Further, since the substrate W dried by the cleaning / drying processing unit SD is transported through the cover film removal block 17 and the development processing block 18, the temperature and humidity in the blocks 17 and 18 can be easily adjusted. Further, since the liquid adhering to the substrate W during the exposure processing is prevented from falling into the cover film removal block 17 and the development processing block 18, it is possible to prevent malfunction such as an abnormality in the electrical system of the substrate processing apparatus 500. Can do.

  As a result, it is possible to sufficiently prevent processing defects on the substrate W.

  In the cleaning / drying processing unit SD, the substrate W is dried by blowing an inert gas from the central portion to the peripheral portion of the substrate W while rotating the substrate W. In this case, since the liquid adhering to the substrate W can be reliably removed, it is possible to reliably prevent dust and the like in the atmosphere from adhering again to the substrate W after cleaning. Thereby, the contamination of the substrate W can be surely prevented, and the occurrence of dry spots on the surface of the substrate W can be prevented. As a result, it is possible to reliably prevent processing defects on the substrate W after the exposure processing.

  Further, in the fifth central robot CR5 of the cleaning / drying processing block 16, the substrate W before the cleaning and drying processing by the cleaning / drying processing unit SD is held by the lower hand CRH10 and by the cleaning / drying processing unit SD. The substrate W after the cleaning and drying process is held by the upper hand CRH9. In this case, since the hand CRH 9 always holds the dried substrate W, the liquid of the substrate W does not adhere to the hand CRH 9. Further, since the hand CRH9 is provided above the hand CRH10, even if the liquid adhering to the hand CRH10 and the substrate W held by the hand CRH10 falls, the liquid adheres to the hand CRH9 and the substrate W held by the hand CRH9. There is no. As a result, the liquid is reliably prevented from adhering to the substrate W after the cleaning and drying processing by the cleaning / drying processing unit SD.

  Further, before the exposure process is performed on the substrate W in the exposure apparatus STP, a resist cover film is formed on the resist film formed on the substrate W by the coating unit COV of the resist cover film processing block 12. In this case, even if the substrate W comes into contact with the liquid in the exposure apparatus STP, the resist film prevents the resist film from coming into contact with the liquid, so that the resist components are prevented from eluting into the liquid. Therefore, contamination in the exposure apparatus STP can be prevented more reliably.

  Further, before the development processing of the substrate W is performed in the development processing block 18, the resist cover film removal processing is performed by the removal unit REM of the resist cover film removal block 17. In this case, since the resist cover film is reliably removed before the development processing, the development processing can be performed reliably. Thereby, processing defects of the substrate W in the development processing unit DEV can be prevented.

  Further, the processed substrate W carried out of the development processing block 18 is transferred to the indexer block 9 via the first transfer block 19 and the second transfer block 20. Thereby, the receiving of the substrate W from the outside and the unloading of the substrate W to the outside can be performed in the indexer block 9, so that the work efficiency is improved.

  When a liquid that does not elute the resist components during the exposure process is used in the exposure apparatus STP, the resist cover film processing block 12 need not be provided. In this case, since it is not necessary to provide the resist cover film removal block 17, the substrate processing apparatus 500 can be downsized.

  Further, when a liquid capable of removing the resist cover film is used as the developer in the development processing unit DEV, the resist cover film removal block 17 may not be provided.

  Further, in the cleaning / drying processing unit SD shown in FIG. 4, the cleaning processing nozzle 650 and the drying processing nozzle 670 are provided separately. However, as shown in FIG. The drying processing nozzle 670 may be integrally provided. In this case, since it is not necessary to move the cleaning nozzle 650 and the drying nozzle 670 separately during the cleaning process or the drying process of the substrate W, the driving mechanism can be simplified.

  Further, instead of the drying processing nozzle 670, a drying processing nozzle 770 as shown in FIG.

  The drying processing nozzle 770 of FIG. 7 includes branch pipes 771 and 772 that extend vertically downward and obliquely downward from the side surfaces. Gas discharge ports 770a, 770b, and 770c for discharging an inert gas are formed at the lower end of the drying processing nozzle 770 and the lower ends of the branch pipes 771 and 772. Inert gas is discharged vertically and obliquely downward from the discharge ports 770a, 770b, and 770c, respectively, as indicated by arrows in FIG. That is, in the drying processing nozzle 770, the inert gas is discharged so that the spraying range expands downward.

  Here, when the drying processing nozzle 770 is used, the cleaning / drying processing unit SD performs the drying processing of the substrate W by the operation described below.

  FIG. 8 is a diagram for explaining a method for drying the substrate W when the drying processing nozzle 770 is used.

  First, after the liquid layer L is formed on the surface of the substrate W by the method described in FIG. 6, the drying processing nozzle 770 moves above the center portion of the substrate W as shown in FIG. Thereafter, an inert gas is discharged from the drying processing nozzle 770. As a result, as shown in FIG. 8B, the rinse liquid at the center of the substrate W moves to the peripheral edge of the substrate W, and the liquid layer L exists only at the peripheral edge of the substrate W. At this time, the drying processing nozzle 770 is placed close to the surface of the substrate W so that the rinsing liquid present at the center of the substrate W can be moved reliably.

  Next, the rotational speed of the rotary shaft 625 (see FIG. 4) increases, and the drying processing nozzle 770 moves upward as shown in FIG. 8C. Thereby, a large centrifugal force acts on the liquid layer L on the substrate W, and the range in which the inert gas on the substrate W is sprayed is expanded. As a result, the liquid layer L on the substrate W can be reliably removed. The drying processing nozzle 770 moves up and down by moving the second rotating shaft 672 up and down by a rotating shaft lifting mechanism (not shown) provided on the second rotating shaft 672 in FIG. Can be moved.

  Further, instead of the drying processing nozzle 770, a drying processing nozzle 870 as shown in FIG. 9 may be used. The drying processing nozzle 870 in FIG. 9 has a discharge port 870a whose diameter gradually increases downward. From the discharge port 870a, an inert gas is discharged vertically downward and obliquely downward as indicated by arrows in FIG. That is, in the drying nozzle 870, similarly to the drying nozzle 770 in FIG. 7, the inert gas is discharged so that the spray range is expanded downward. Therefore, even when the drying processing nozzle 870 is used, the substrate W can be dried by the same method as that when the drying processing nozzle 770 is used.

  Further, instead of the cleaning / drying processing unit SD shown in FIG. 4, a cleaning / drying processing unit SDa as shown in FIG. 10 may be used.

  The cleaning / drying processing unit SDa shown in FIG. 10 is different from the cleaning / drying processing unit SD shown in FIG. 4 in the following points.

  In the cleaning / drying processing unit SDa of FIG. 10, a disc-shaped blocking plate 682 having an opening at the center is provided above the spin chuck 621. A support shaft 689 is provided vertically downward from the vicinity of the tip of the arm 688, and a blocking plate 682 is attached to the lower end of the support shaft 689 so as to face the upper surface of the substrate W held by the spin chuck 621.

A gas supply path 690 communicating with the opening of the blocking plate 682 is inserted into the support shaft 689. For example, nitrogen gas (N ₂ ) is supplied to the gas supply path 690.

  The arm 688 is connected to a shield plate lifting / lowering drive mechanism 697 and a shield plate rotation drive mechanism 698. The blocking plate lifting / lowering drive mechanism 697 moves the blocking plate 682 up and down between a position close to the upper surface of the substrate W held by the spin chuck 621 and a position away from the spin chuck 621.

  In the cleaning / drying processing unit SDa of FIG. 10, during the drying process of the substrate W, the gap between the substrate W and the shielding plate 682 with the shielding plate 682 in proximity to the substrate W as shown in FIG. 11. Inert gas is supplied from the gas supply path 690 to the gas. In this case, since the inert gas can be efficiently supplied from the central portion of the substrate W to the peripheral portion, the liquid layer L on the substrate W can be reliably removed.

  In the above embodiment, the substrate W is dried by the spin drying method in the cleaning / drying processing unit SD. However, the substrate W is dried by another drying method such as a vacuum drying method or an air knife drying method. You may give it.

  In the above embodiment, the inert gas is supplied from the drying processing nozzle 670 in a state where the liquid layer L of the rinsing liquid is formed, but the liquid layer L of the rinsing liquid is not formed. Alternatively, when the rinsing liquid is not used, the substrate W is completely dried by immediately supplying an inert gas from the drying nozzle 670 after the substrate W is rotated and the liquid layer of the cleaning liquid is once shaken off. May be.

(Second Embodiment)
FIG. 12 is a schematic plan view of a substrate processing apparatus according to the second embodiment of the present invention.

  The substrate processing apparatus 501 of FIG. 12 is different from the substrate processing apparatus 500 of FIG. 1 in the following points.

  As shown in FIG. 12, the substrate processing apparatus 501 does not have the cleaning / drying processing block 16, and the cleaning / drying processing units 60a and 60b are provided in the second interface block 15a. The second interface transport mechanism IFR2 is provided with hands H3 and H4 for delivering the substrate W up and down.

  In the substrate processing apparatus 501 according to the present embodiment, the substrate W that has been subjected to the exposure processing in the exposure apparatus STP is received by the lower hand H4 of the second interface transport mechanism IFR2 of the second interface block 15a. It is. The second interface transport mechanism IFR2 carries the substrate W into the cleaning / drying processing units 60a and 60b. As described above, in the cleaning / drying processing units 60a and 60b, the cleaning / drying processing unit SD performs the cleaning and drying processing of the substrate W.

  Thereafter, the second interface transport mechanism IFR2 takes out the processed substrate W from the cleaning / drying processing units 60a and 60b with the upper hand H3, and places the substrate on the substrate platform PASS7.

  Thus, in the present embodiment, the substrate W can be cleaned and dried in the second interface transport mechanism IFR2. Thereby, since it is not necessary to provide the cleaning / drying processing block 16, the footprint of the substrate processing apparatus 501 can be reduced.

  Further, since the substrate W can be cleaned and dried immediately after the exposure processing, the possibility that the liquid adhering to the substrate W falls into the substrate processing apparatus 501 is greatly reduced.

  Further, in the second interface transport mechanism IFR2, the substrate W to which the liquid before the drying process by the cleaning / drying processing unit SD is attached is held by the hand H4, and the substrate W after the drying process by the cleaning / drying processing unit SD is held. Is held by the hand H3. Thereby, the liquid of the substrate W does not adhere to the hand H3. Further, since the hand H3 is provided above the hand H4, even if the liquid adhering to the hand H4 and the substrate W held by the hand H4 falls, the liquid adheres to the hand H3 and the substrate W held by the hand H3. There is no. As a result, the liquid is reliably prevented from adhering to the substrate W after the cleaning and drying processing by the cleaning / drying processing unit.

  Also in the present embodiment, similarly to the substrate processing apparatus 500 of FIG. 1, the transport path differs between the substrate W before the exposure process and the substrate W after the exposure process. Therefore, the substrate W to which the liquid has adhered during the exposure process is not transported through the first interface block 13, the resist cover film processing block 12, the resist film processing block 11, and the antireflection film processing block 10. . In this case, the liquid adhering to the substrate W does not affect the atmosphere in these blocks 10 to 13. Thereby, the temperature and humidity adjustment in those blocks 10-13 becomes easy.

  Further, the liquid adhering to the substrate W during the exposure processing is provided in the antireflection film processing block 10, the resist film processing block 11, the resist cover film processing block 12, and the first interface block 13, respectively. Since there is no adhesion to the four center robots CR1 to CR4 and the first interface transport mechanism IFR1, no liquid adheres to the substrate W before the exposure process. This prevents dust in the atmosphere from adhering to the substrate W before the exposure process, so that it is possible to prevent the resolution performance from being deteriorated during the exposure process. Further, by preventing dust or the like in the atmosphere from adhering to the substrate W before the exposure processing, contamination in the exposure apparatus STP can be prevented.

  In addition, after the exposure processing is performed on the substrate W in the exposure apparatus STP, the cleaning processing of the substrate W is performed by the cleaning / drying processing unit SD of the cleaning / drying processing block 16. In this case, even if dust or the like in the atmosphere adheres to the substrate W to which the liquid has adhered during the exposure process, the adhered substance can be removed in the cleaning / drying processing unit SD.

  In the cleaning / drying processing unit SD, the substrate W is dried after the cleaning. Thereby, it is possible to prevent dust and the like in the atmosphere from adhering to the cleaned substrate W again. Further, since the substrate W dried by the cleaning / drying processing unit SD is transported through the cover film removal block 17 and the development processing block 18, the temperature and humidity in the blocks 17 and 18 can be easily adjusted.

  As a result, it is possible to sufficiently prevent processing defects on the substrate W.

  Further, since the substrate W is dried in the second interface transport mechanism IFR2 immediately after the exposure processing, the liquid adhering to the substrate W during the exposure processing is prevented from falling into the substrate processing apparatus 500. . Thereby, it is possible to prevent malfunction such as abnormality of the electrical system of the exposure apparatus 500.

  In the present embodiment, cleaning / drying processing blocks 60a and 60b are provided in the second interface block 15a, but instead of a part of the resist cover film removal processing unit 70 of the resist cover film removal block 17. A cleaning / drying processing unit SD may be provided.

  In this case, the substrate W placed on the substrate platform PASS7 (see FIG. 12) is received by the hand CRH12 below the sixth central robot CR6 of the resist cover film removal block 17. The sixth central robot CR6 carries the substrate W into the cleaning / drying processing unit SD provided in the resist cover film removal processing unit 70.

  Thereafter, the sixth central robot CR6 takes out the processed substrate W from the cleaning / drying processing unit SD with the upper hand CRH11 and carries the substrate W into the post-exposure baking heat treatment units 170 and 171. Next, the sixth central robot CR6 takes out the heat-treated substrate W from the post-exposure bake heat treatment units 170 and 171 with the upper hand CRH11 and carries the substrate into the removal unit REM of the resist cover film removal processing unit 70. To do.

  Thereafter, the sixth central robot CR6 takes out the processed substrate W from the removal unit REM with the upper hand CRH11 and places the substrate W on the substrate platform PASS8.

  In this way, by providing the cleaning / drying processing unit SD in the resist cover film removing processing unit 70 of the resist cover film removing block 17, the cleaning and drying processing block 16 is not provided, and the substrate W after the exposure processing is cleaned and cleaned. It becomes possible to perform a drying process.

  Further, the substrate W to which the liquid before the drying process by the cleaning / drying processing unit SD is attached is held by the hand CRH12, and the substrate W after the drying process by the cleaning / drying processing unit SD is held by the upper hand CRH11. It is possible to reliably prevent the liquid from adhering to the substrate W after the drying process.

  When the resist cover block 17 is provided with the cleaning / drying processing unit SD, the substrate W after the exposure processing carried out from the exposure apparatus STP by the sixth central robot CR6 without providing the second interface block 15a. You may receive. In this case, since the substrate W can be cleaned and dried in the resist cover block 17 immediately after the exposure processing, contamination of the substrate can be more reliably prevented.

  When the resist cover film removal block 17 is not provided, a cleaning / drying processing unit SD may be provided in place of a part of the development processing unit 80 of the development processing block 18.

  In this case, the substrate W placed on the substrate platform PSAA8 (see FIG. 12) is received by the hand CRH14 below the seventh central robot CR7 of the development processing block 18. The seventh central robot CR7 carries the substrate W into the cleaning / drying processing unit SD provided in the development processing unit 80.

  Thereafter, the seventh central robot CR7 takes out the processed substrate W from the cleaning / drying processing unit SD with the upper hand CRH13, and carries the substrate W into the development heat treatment section 180. In the development heat treatment section 180, post-exposure baking (PEB) is performed on the substrate W.

  Next, the seventh central robot CR7 takes out the heat-treated substrate W from the development heat treatment section 180 with the upper hand CRH13 and carries the substrate into the development unit DEV of the development processing section 80. Thereafter, the seventh central robot CR7 takes out the processed substrate W from the developing unit DEV with the upper hand CRH13 and carries the substrate into the developing heat treatment units 180 and 181.

  Next, the seventh central robot CR7 takes out the heat-treated substrate W from the development heat treatment units 180 and 181 with the upper hand CRH13, and places the substrate on the substrate platform PASS9.

  In this manner, by providing the cleaning / drying processing unit SD in the development processing unit 80 of the development processing block 18, the cleaning and drying processing of the substrate W after the exposure processing can be performed without providing the cleaning / drying processing block 16. Is possible.

  Further, the substrate W to which the liquid before the drying process by the cleaning / drying processing unit SD is attached is held by the hand CRH14, and the substrate W after the drying process by the cleaning / drying processing unit SD is held by the upper hand CRH13. It is possible to reliably prevent the liquid from adhering to the substrate W after the drying process.

  When the cleaning / drying processing unit SD is provided in the development processing block 18, the substrate W after the exposure processing carried out from the exposure apparatus STP by the seventh central robot CR7 without providing the second interface block 15a. You may receive. In this case, since the substrate W can be cleaned and dried in the development processing block 18 immediately after the exposure processing, contamination of the substrate can be more reliably prevented.

(Third embodiment)
FIG. 13 is a schematic plan view of a substrate processing apparatus according to the third embodiment of the present invention.

  The substrate processing apparatus 502 in FIG. 13 is different from the substrate processing apparatus 500 in FIG. 1 in the following points.

  As shown in FIG. 13, the substrate processing apparatus 502 does not have the resist cover film processing block 12 and the resist cover film removal block 17. Further, a fourth central robot CR4 and an edge exposure unit EEW are provided on the resist film processing block 11 side in the first interface block 13a, and the cleaning / drying processing units 60a and 60b described above have the same cleaning / The drying processing unit 60c and the first interface transport mechanism IFR1 are provided on the external device installation block 14 (exposure device STP) side in the first interface block 13a. Further, a substrate platform PASS 12 is provided in the resist film heat treatment section 111 of the resist film processing block 11.

  In the substrate processing apparatus 502 according to the present embodiment, the substrate W that has been subjected to the predetermined processing in the resist film processing block 11 is placed on the substrate platform PASS12 by the second central robot CR2. The substrate W placed on the substrate platform PASS12 is received by the fourth central robot CR4 of the first interface block 13. The fourth central robot CR4 carries the substrate W into the edge exposure unit EEW.

  Next, the fourth central robot CR4 takes out the processed substrate W from the edge exposure unit EEW and places the substrate W on the substrate platform PASS5. The substrate W placed on the substrate platform PASS5 is received by the first interface transport mechanism IFR1. The first interface transport mechanism IFR carries the substrate W into the cleaning / drying processing unit 60c. In the cleaning / drying processing unit 60c, the cleaning / drying processing unit SD performs the cleaning and drying processing of the substrate W.

  Thereafter, the first interface transport mechanism IFR1 takes out the processed substrate W from the cleaning / drying processing unit 60c, and carries the substrate W into the exposure apparatus STP.

  As described above, in the present embodiment, before the exposure process is performed on the substrate W in the exposure apparatus STP, the substrate W in the cleaning / drying processing unit SD of the cleaning / drying processing unit 60c of the first interface block 13a. The cleaning process is performed. During this cleaning process, some of the resist components on the substrate W are eluted into the cleaning solution and washed away. Therefore, even if the substrate W comes into contact with the liquid in the exposure apparatus STP, the resist component on the substrate W hardly elutes in the liquid. Thereby, contamination in the exposure apparatus STP can be reduced and resist components can be prevented from remaining on the surface of the substrate W. As a result, processing defects of the substrate W that occur in the exposure apparatus STP can be prevented.

  Further, in the cleaning / drying processing unit SD, the substrate W is also subjected to a drying process. Therefore, when the cleaned substrate W is transferred from the cleaning processing unit 60c to the exposure apparatus STP, dust in the atmosphere is placed on the substrate W. Etc. can be prevented. Further, since the substrate W to which the liquid is attached is not transported in the first interface block 13a, the temperature and humidity in the first interface block 13a can be easily adjusted.

  In the cleaning process of the substrate W in the cleaning / drying processing unit SD of the cleaning processing unit 60c, the supply time of the cleaning liquid is adjusted so that the resist components on the substrate W are appropriately eluted.

  Further, as described in the second embodiment, when the cleaning / drying processing units 60a and 60b are provided in the second interface block 15, or in place of a part of the development processing unit 80 of the development processing block 18, the cleaning / drying processing unit 60a, 60b is provided. When the drying processing unit SD is provided, it is not necessary to provide the cleaning / drying processing block 16. In this case, the footprint of the substrate processing apparatus 502 can be reduced.

  Also in the present embodiment, similarly to the substrate processing apparatus 500 of FIG. 1, the transport path differs between the substrate W before the exposure process and the substrate W after the exposure process. Therefore, since the substrate W to which the liquid after the exposure process is attached is not transported in the first interface block 13a, the resist film processing block 11 and the antireflection film processing block 10, Temperature and humidity adjustment is easy.

  Further, the first central robot CR1 and the second central robot provided in the antireflection film processing block 10, the resist film processing block 11, and the first interface block 13a, respectively, are attached to the substrate W during the exposure processing. Since the liquid does not adhere to CR2, the fourth central robot CR4, and the first interface transport mechanism IFR1, the liquid does not adhere to the substrate W before the exposure processing. This prevents dust in the atmosphere from adhering to the substrate W before the exposure process, so that it is possible to prevent the resolution performance from being deteriorated during the exposure process. Further, by preventing dust or the like in the atmosphere from adhering to the substrate W before the exposure processing, contamination in the exposure apparatus STP can be prevented.

  As a result, it is possible to sufficiently prevent processing defects on the substrate W.

  In the present embodiment, since the cleaning and drying processing of the substrate W is performed immediately before the exposure processing, contamination of the substrate W carried into the exposure apparatus STP can be more reliably prevented.

(Fourth embodiment)
FIG. 14 is a schematic plan view of a substrate processing apparatus according to the fourth embodiment of the present invention.

  The substrate processing apparatus 503 in FIG. 14 is different from the substrate processing apparatus 500 in FIG. 1 in the following points.

  As shown in FIG. 14, the substrate processing apparatus 503 does not have the resist cover film processing block 12 and the resist cover film removal block 17. The first interface block 13b is not provided with the fourth center robot CR4. Further, a cleaning / drying processing block 16a is provided between the resist film processing block 11 and the first interface block 13b.

  In addition, a partition wall 28 is provided between the cleaning / drying processing block 16a and the first interface block 13, and a substrate platform PASS13 is provided in the partition wall 28.

  The cleaning / drying processing block 16a has the same configuration as the cleaning / drying processing block 16 described above.

  In the substrate processing apparatus 503 according to the present embodiment, the substrate W that has been subjected to the predetermined processing in the resist film processing block 11 is carried into the cleaning / drying processing block 16a. In the cleaning / drying processing block 16a, the substrate W is cleaned and dried in the same manner as the cleaning / drying processing block 16 described above.

  The substrate W that has been subjected to the predetermined processing in the cleaning / drying processing block 16a is placed on the substrate platform PASS13. The substrate W placed on the substrate platform PASS13 is received by the first interface transport mechanism IFR1 of the first interface block 13. The first interface transport mechanism IFR1 carries the substrate W into the edge exposure unit EEW. Thereafter, the first interface transport mechanism IFR1 takes out the processed substrate W from the edge exposure unit EEW and carries the substrate W into the exposure apparatus STP.

  Thus, in the present embodiment, before the exposure process is performed on the substrate W in the exposure apparatus STP, the cleaning process of the substrate W is performed in the cleaning / drying processing block 16a. During this cleaning process, some of the resist components on the substrate W are eluted into the cleaning solution and washed away. Therefore, even if the substrate W comes into contact with the liquid in the exposure apparatus STP, the resist component on the substrate W hardly elutes in the liquid. Thereby, contamination in the exposure apparatus STP can be reduced, and resist components can be prevented from remaining on the surface of the substrate W. As a result, processing defects of the substrate W that occur in the exposure apparatus STP can be reduced.

  In the cleaning / drying processing unit SD, the substrate W is also subjected to a drying process. Therefore, when the cleaned substrate W is transferred from the cleaning processing units 60a, 60b of the cleaning / drying processing block 16a to the exposure apparatus STP. Thus, it is possible to prevent dust and the like in the atmosphere from adhering to the substrate W. Further, since the substrate W to which the liquid is attached is not transported in the cleaning / drying processing block 16a and the first interface block 13, the temperature / humidity adjustment in the cleaning / drying processing block 16a and the first interface block 13 is performed. Becomes easier.

  In the cleaning process of the substrate W in the cleaning / drying processing unit SD of the cleaning processing units 60a and 60b of the cleaning / drying processing block 16a, the supply time of the cleaning liquid is set so that the resist components on the substrate W are appropriately eluted. It has been adjusted.

  Further, as described in the second embodiment, when the cleaning / drying processing units 60a and 60b are provided in the second interface block 15, or in place of a part of the development processing unit 80 of the development processing block 18, the cleaning / drying processing unit 60a, 60b is provided. When the drying processing unit SD is provided, it is not necessary to provide the cleaning / drying processing block 16. In this case, the footprint of the substrate processing apparatus 503 can be reduced.

  When the first interface block 13 described in FIG. 1 is used instead of the first interface block 13b, the substrate platform PASS13 is placed at the same position as the PASS 4 in FIG. 1 in the cleaning / drying processing block 16a. What is necessary is just to provide.

  Also in the present embodiment, similarly to the substrate processing apparatus 500 of FIG. 1, the transport path differs between the substrate W before the exposure process and the substrate W after the exposure process. Therefore, the substrate W to which the liquid after the exposure processing is attached is not transported through the first interface block 13, the cleaning / drying processing block 16a, the resist film processing block 11, and the antireflection film processing block 10. Therefore, it becomes easy to adjust the temperature and humidity of each block.

  In addition, the first central robot provided in the antireflection film processing block 10, the cleaning / drying processing block 16a, the resist film processing block 11 and the first interface block 13 with the liquid adhering to the substrate W during the exposure processing. Since it does not adhere to CR1, second center robot CR2, fifth center robot CR5, fourth center robot CR4, and first interface transport mechanism IFR1, liquid adheres to substrate W before the exposure process. There is nothing. This prevents dust in the atmosphere from adhering to the substrate W before the exposure process, so that it is possible to prevent the resolution performance from being deteriorated during the exposure process. Further, by preventing dust or the like in the atmosphere from adhering to the substrate W before the exposure processing, contamination in the exposure apparatus STP can be prevented.

  As a result, it is possible to sufficiently prevent processing defects on the substrate W.

  Further, the number of coating units BARC, RES, COV, cleaning / drying processing unit SD, removal unit REM, development processing unit DEV, heating unit HP, and cooling unit CP can be changed as appropriate according to the processing speed of each processing block. Good.

(Correspondence between each component of claim and each part of embodiment)
In the above embodiment, the indexer block 9, the antireflection film processing block 10, the resist film processing block 11, the resist cover film processing block 12, the first interface blocks 13, 13a, 13b, and the cleaning / drying processing block. 16a corresponds to the first processing unit, and the second interface blocks 15 and 15a, the cleaning / drying processing block 16, the cover film removal block 17 and the development processing block 18 correspond to the second embodiment, and The drying processing units SD and SDa correspond to the first and second cleaning / drying processing units, the coating unit RES corresponds to the photosensitive film forming unit, the coating unit DEV corresponds to the development processing unit, and the coating unit COV protects. Corresponding to the film forming unit, the coating unit BARC Corresponding to the Tsu door.

The cleaning / drying processing block 16 or the second interface block 15a corresponds to the first processing unit, the fifth central robot CR5 or the second interface transport mechanism IFR2 corresponds to the first transport unit, The hand CRH9 or hand H3 corresponds to the first holding means, the hand CRH10 or hand H4 corresponds to the second holding means, the resist film processing block 11 corresponds to the second processing unit, and the second center. The robot CR2 corresponds to the second transport unit, the heating unit HP and the cooling unit CP correspond to the heat treatment unit, the development processing block 18 corresponds to the third or fourth processing unit, and the seventh center robot CR7 Corresponds to the third or fourth transport unit, hand CRH13 corresponds to the third holding means, The HR 14 corresponds to a fourth holding unit, the resist cover film processing block 12 corresponds to a fifth processing unit, the third central robot CR3 corresponds to a fifth transport unit, and the first interface block 13a. Alternatively, the cleaning / drying processing block 16a corresponds to the sixth processing unit, the first interface transport mechanism IFR1 or the fifth central robot CR5 corresponds to the sixth transport unit, and the cover film removal block 17 is the seventh. Or it corresponds to the eighth processing unit, the sixth central robot CR6 corresponds to the seventh or eighth transport unit, the hand CRH11 corresponds to the fifth holding means, and the hand CRH12 corresponds to the sixth holding means. The antireflection film processing block 10 corresponds to the ninth processing unit, and the first central robot CR1 corresponds to the ninth transport unit. Corresponds to the indexer block 9 corresponds to a substrate loading and unloading unit, the first transport block 19 corresponds to the substrate outlet, the second transport block 20 corresponds to the path, the second transport robot TR2 is substrate transfer The carrier mounting table 92 corresponds to the mounting unit, and the carrier C corresponds to the substrate storage container .

  The spin chuck 621 corresponds to the substrate holding means, the rotation shaft 625 and the chuck rotation drive mechanism 636 correspond to the rotation drive means, and the cleaning processing nozzle 650 corresponds to the cleaning liquid supply means and the rinse liquid supply means, and the drying process. The nozzles 670, 770, 870 for use correspond to inert gas supply means.

  The present invention can be used for processing various substrates.

1 is a schematic plan view of a substrate processing apparatus according to a first embodiment of the present invention. It is the side view which looked at the substrate processing apparatus of Drawing 1 from the + X direction. It is the side view which looked at the substrate processing apparatus of Drawing 1 from the -X direction. It is a figure for demonstrating the structure of a washing | cleaning / drying processing unit. It is a figure for demonstrating operation | movement of a washing | cleaning / drying processing unit. It is a schematic diagram when the nozzle for washing processing and the nozzle for drying processing are provided integrally. It is a schematic diagram which shows the other example of the nozzle for a drying process. It is a figure for demonstrating the drying processing method of the board | substrate at the time of using the nozzle for drying processing of FIG. It is a schematic diagram which shows the other example of the nozzle for a drying process. It is a schematic diagram which shows the other example of a washing | cleaning / drying processing unit. It is a figure for demonstrating the drying processing method of the board | substrate at the time of using the washing | cleaning / drying processing unit of FIG. It is a typical top view of the substrate processing apparatus concerning a 2nd embodiment of the present invention. It is a typical top view of the substrate processing apparatus concerning a 3rd embodiment of the present invention. It is a typical top view of the substrate processing apparatus concerning a 4th embodiment of the present invention.

Explanation of symbols

9 Indexer block 10 Antireflection film processing block 11 Resist film processing block 12 Resist cover film processing block 13, 13a, 13b First interface block 14 External device installation block 15, 15a Second interface block 16, 16a Cleaning / Drying processing block 17 Cover film removal block 18 Development processing block 19 First transport block 20 Second transport block 21-28 Partition 30 Anti-reflection film coating processing section 40 Resist film coating processing section 50 Resist cover film coating Processing unit 60a, 60b, 60c Cleaning / drying processing unit 70 Resist cover film removal processing unit 80 Development processing unit 91 Control unit 92 Carrier mounting table 100, 101 Antireflection film heat treatment unit 110, 111 Resist film heat treatment unit 120, 12 DESCRIPTION OF SYMBOLS 1 Resist cover film heat treatment part 170,171 Post-exposure bake heat treatment part 180,181 Development heat treatment part 500,501,502,503 Substrate processing apparatus 621 Spin chuck 625 Rotating shaft 636 Chuck rotation drive mechanism 650 Cleaning process nozzle 670 , 770, 870 Drying processing nozzle 682 Barrier plate BARC, RES, COV Coating unit CR1-CR7 First to seventh central robots DEV Development processing unit EEW Edge exposure unit IR Indexer robot IFR1 First interface transport mechanism IFR2 First 2 interface transport mechanism REM removal unit S / D, S / Da Cleaning / drying processing unit TR1 1st transport robot TR2 2nd transport robot PASS1 to PASS13 Substrate platform STP exposure apparatus W substrate

Claims (34)

A substrate processing apparatus disposed adjacent to an exposure apparatus,
A first processing unit provided to be adjacent to one side surface of the exposure apparatus for performing a predetermined process on the substrate before the exposure process by the exposure apparatus;
A second processing unit provided adjacent to the other side surface of the exposure apparatus for performing a predetermined process on the substrate after the exposure process by the exposure apparatus ;
Substrate loading / unloading having a placement unit on which a substrate storage container for storing a substrate is placed, which is disposed on the opposite side of the exposure apparatus with respect to the first processing unit and adjacent to the first processing unit. And
A substrate carry-out unit disposed adjacent to the second processing unit on the side opposite to the exposure apparatus with respect to the second processing unit;
A path connecting the substrate carry-in / out unit and the substrate carry-out unit;
A substrate transport section provided in the path,
The second processing unit, viewed contains a first cleaning and drying process unit for cleaning and drying the substrate,
The substrate loading / unloading unit loads the substrate stored in the substrate storage container mounted on the mounting unit into the first processing unit,
The substrate unloading unit unloads the substrate from the second processing unit,
The substrate transporting unit transports the substrate unloaded by the substrate unloading unit by moving the path to the substrate loading / unloading unit,
The substrate carry-in / out unit stores the substrate transported by the substrate transport unit in a substrate storage container placed on the placement unit. The substrate processing apparatus according to claim 1, wherein the first cleaning / drying processing unit is provided adjacent to the exposure apparatus. The first processing unit includes a photosensitive film forming unit that forms a photosensitive film made of a photosensitive material on a substrate,
The substrate processing apparatus according to claim 1, wherein the second processing unit further includes a development processing unit that performs development processing of the substrate after cleaning and drying processing by the first cleaning / drying processing unit. The substrate processing apparatus according to claim 3, wherein the first processing unit further includes a protective film forming unit that forms a protective film for protecting the photosensitive film. The second processing unit further includes a removal unit that removes the protective film after the substrate cleaning and drying processing by the first cleaning / drying processing unit and before the development processing of the substrate by the development processing unit. The substrate processing apparatus according to claim 4. 4. The substrate according to claim 3, wherein the first processing unit further includes a second cleaning / drying processing unit for performing cleaning and drying processing of the substrate after the photosensitive film is formed by the photosensitive film forming unit. Processing equipment. The substrate processing apparatus according to claim 6, wherein the second cleaning / drying processing unit is provided adjacent to the exposure apparatus. The first processing unit, one of the claims 3-7, characterized in that it further comprises an anti-reflection film forming unit for forming an antireflection film on the substrate before forming the photosensitive film by the photosensitive film formation unit The substrate processing apparatus according to claim The second processing unit includes:
The substrate processing apparatus according to claim 1, further comprising: a first processing unit including the first cleaning / drying processing unit and a first transport unit that transports the substrate. The substrate processing apparatus according to claim 9, wherein the first processing unit is disposed adjacent to the exposure apparatus. The first transport unit includes first and second holding means for holding a substrate,
The first transport unit is
When transporting the substrate after cleaning and drying processing by the first cleaning / drying processing unit, the substrate is held by the first holding means,
11. The substrate processing apparatus according to claim 9, wherein the substrate is held by the second holding unit when the substrate before cleaning and drying processing by the first cleaning / drying processing unit is transported. The substrate processing apparatus according to claim 11, wherein the second holding unit is provided below the first holding unit. The first processing unit includes:
A second processing unit including a photosensitive film forming unit that forms a photosensitive film made of a photosensitive material on a substrate, a heat treatment unit that performs heat treatment on the substrate, and a second transport unit that transports the substrate;
The second processing unit includes:
A third processing unit including a development processing unit for developing a substrate after cleaning and drying processing of the substrate by the first cleaning / drying processing unit, a heat treatment unit for performing heat treatment on the substrate, and a third transport unit for transporting the substrate The substrate processing apparatus according to claim 9, further comprising: The first processing unit includes:
A second processing unit including a photosensitive film forming unit that forms a photosensitive film made of a photosensitive material on a substrate, a heat treatment unit that performs heat treatment on the substrate, and a second transport unit that transports the substrate;
The second processing unit includes:
The first cleaning / drying processing unit, the development processing unit for developing the substrate after the cleaning and drying processing of the substrate by the first cleaning / drying processing unit, the thermal processing unit for performing thermal processing on the substrate, and the fourth for transporting the substrate The substrate processing apparatus according to claim 1, further comprising a fourth processing unit including a transfer unit. The substrate processing apparatus according to claim 14, wherein the fourth processing unit is disposed adjacent to the exposure apparatus. The fourth transport unit includes third and fourth holding means for holding the substrate,
The fourth transport unit is
When transporting the substrate after cleaning and drying processing by the first cleaning / drying processing unit, the substrate is held by the third holding means,
16. The substrate processing apparatus according to claim 14, wherein the substrate is held by the fourth holding means when the substrate before the cleaning and drying processing by the first cleaning / drying processing unit is transported. The substrate processing apparatus according to claim 16, wherein the fourth holding unit is provided below the third holding unit. The first processing unit includes:
A protective film forming unit for forming a protective film for protecting the photosensitive film, a heat treatment unit for performing heat treatment on the substrate, and a fifth processing unit including a fifth transport unit for transporting the substrate;
The substrate processing apparatus according to claim 13, wherein the fifth processing unit is disposed between the second processing unit and the exposure apparatus. The first processing unit includes:
A sixth processing unit including a second cleaning / drying processing unit for cleaning and drying the substrate after formation of the photosensitive film by the photosensitive film forming unit, and a sixth transport unit for transporting the substrate;
The substrate processing apparatus according to claim 13, wherein the sixth processing unit is disposed between the second processing unit and the exposure apparatus. The substrate processing apparatus according to claim 19, wherein the sixth processing unit is disposed adjacent to an exposure apparatus. The first processing unit includes:
A protective film forming unit for forming a protective film for protecting the photosensitive film, a heat treatment unit for performing heat treatment on the substrate, and a fifth processing unit including a fifth transport unit for transporting the substrate;
The second processing unit includes:
A removal unit that removes the protective film after cleaning and drying processing of the substrate by the first cleaning / drying processing unit and before development processing of the substrate by the development processing unit, a heat treatment unit that performs heat treatment on the substrate, and the substrate are transported And a seventh processing unit including a seventh transport unit.
The fifth processing unit is disposed between the second processing unit and the exposure apparatus,
The substrate processing apparatus according to claim 13, wherein the seventh processing unit is disposed between the first processing unit and the third processing unit. The first processing unit includes:
A second processing unit including a photosensitive film forming unit that forms a photosensitive film made of a photosensitive material on a substrate, a heat treatment unit that performs heat treatment on the substrate, and a second transport unit that transports the substrate;
A protective film forming unit for forming a protective film for protecting the photosensitive film, a heat treatment unit for performing heat treatment on the substrate, and a fifth processing unit including a fifth transport unit for transporting the substrate,
The second processing unit includes:
The first cleaning / drying processing unit, the removal unit for removing the protective film after the cleaning and drying processing of the substrate by the first cleaning / drying processing unit, the heat treatment unit for performing heat treatment on the substrate, and the eighth transport for transporting the substrate An eighth processing unit including the unit;
A development processing unit that performs development processing of the substrate after removal of the protective film by the removal unit, a heat treatment unit that performs heat treatment on the substrate, and a third processing unit that includes a third transport unit that transports the substrate,
The fifth processing unit is disposed between the second processing unit and the exposure apparatus,
The substrate processing apparatus according to claim 1, wherein the eighth processing unit is disposed between the exposure apparatus and the third processing unit. 23. The substrate processing apparatus according to claim 22, wherein the eighth processing unit is disposed adjacent to the exposure apparatus. The eighth transport unit includes fifth and sixth holding means for holding the substrate,
The eighth transport unit is
When transporting the substrate after cleaning and drying processing by the first cleaning / drying processing unit, the substrate is held by the fifth holding means,
The substrate processing apparatus according to claim 22 or 23, wherein the substrate is held by the sixth holding means when the substrate before cleaning and drying processing by the first cleaning / drying processing unit is transported. 25. The substrate processing apparatus according to claim 24, wherein the sixth holding unit is provided below the fifth holding unit. The second cleaning / drying processing unit includes:
Substrate holding means for holding the substrate substantially horizontally;
A rotation driving means for rotating the substrate held by the substrate holding means around an axis perpendicular to the substrate;
Cleaning liquid supply means for supplying a cleaning liquid onto the substrate held by the substrate holding means;
21. The substrate processing apparatus according to claim 6, further comprising an inert gas supply means for supplying an inert gas onto the substrate after the cleaning liquid is supplied onto the substrate by the cleaning liquid supply means. . The inert gas supply means of the second cleaning / drying processing unit is not allowed to be removed from the substrate when the cleaning liquid supplied onto the substrate by the cleaning liquid supply means moves outward from the center of the substrate. 27. The substrate processing apparatus according to claim 26, wherein an active gas is supplied. The second cleaning / drying processing unit includes:
The apparatus further comprises a rinsing liquid supply means for supplying a rinsing liquid onto the substrate after the cleaning liquid is supplied by the cleaning liquid supply means and before the inert gas is supplied by the inert gas supply means. Item 26. The substrate processing apparatus according to Item 26. The inert gas supply means of the second cleaning / drying processing unit is configured so that the rinse liquid supplied onto the substrate by the rinse liquid supply means is removed from the substrate by moving outward from the central portion on the substrate. 29. The substrate processing apparatus according to claim 28, wherein an inert gas is supplied to the substrate. The first cleaning / drying processing unit includes:
Substrate holding means for holding the substrate substantially horizontally;
A rotation driving means for rotating the substrate held by the substrate holding means around an axis perpendicular to the substrate;
Cleaning liquid supply means for supplying a cleaning liquid onto the substrate held by the substrate holding means;
30. The substrate processing apparatus according to claim 1, further comprising an inert gas supply unit that supplies an inert gas onto the substrate after the cleaning solution is supplied onto the substrate by the cleaning solution supply unit. . The inert gas supply means of the first cleaning / drying processing unit is not allowed to be removed from the substrate when the cleaning liquid supplied onto the substrate by the cleaning liquid supply means moves outward from the center of the substrate. 31. The substrate processing apparatus according to claim 30, wherein an active gas is supplied. The first cleaning / drying processing unit includes:
The apparatus further comprises a rinsing liquid supply means for supplying a rinsing liquid onto the substrate after the cleaning liquid is supplied by the cleaning liquid supply means and before the inert gas is supplied by the inert gas supply means. Item 30. The substrate processing apparatus according to Item 30. The inert gas supply means of the first cleaning / drying processing unit is configured to remove the rinse liquid supplied onto the substrate by the rinse liquid supply means from the center by moving outward from the center of the substrate. 33. The substrate processing apparatus according to claim 32, wherein an inert gas is supplied to the substrate. The first processing unit includes:
A ninth anti-reflection film forming unit that forms an anti-reflection film on the substrate before the formation of the photosensitive film by the photosensitive film forming unit; a ninth heat-treating unit that heat-treats the substrate; and a ninth transport unit that transports the substrate the substrate processing apparatus according to any one of claims 13 to 29, characterized in that it further comprises a processing unit.

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