JP4569590B2 - Transceiver module - Google Patents

Transceiver module Download PDF

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JP4569590B2
JP4569590B2 JP2007070683A JP2007070683A JP4569590B2 JP 4569590 B2 JP4569590 B2 JP 4569590B2 JP 2007070683 A JP2007070683 A JP 2007070683A JP 2007070683 A JP2007070683 A JP 2007070683A JP 4569590 B2 JP4569590 B2 JP 4569590B2
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transmission
circuit unit
insulating substrate
control circuit
substrate
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JP2008235447A (en
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文典 鮫島
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Mounting Of Printed Circuit Boards And The Like (AREA)
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  • Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)

Description

この発明は、レーダーシステム等に用いる送受信モジュールに関し、特にアンテナ素子間隔等により実装面積に制約を受ける送受信モジュールに関するものである。   The present invention relates to a transmission / reception module used in a radar system or the like, and more particularly to a transmission / reception module whose mounting area is restricted by an antenna element interval or the like.

送受信モジュールの素子配列の間隔や総個数は、アンテナのビーム制御の細かさや最大ビーム走査角、送信電力などにより決定され、一般にマイクロ波などの高周波（ＲＦ）信号の使用周波数帯が高くなるとアンテナ素子間隔が小さくなるため、モジュールのアンテナ開口面から見た面積は制約され、一層の小型化が要求される。例えば、特開２００２−９２２５号公報図１（特許文献１参照）には、多層基板１２の上面に、ＢＢＩＣ１４、メモリＩＣ１６、水晶発振子１８および表面実装部品２０が実装され、多層基板１２の下面の中央には、キャビティ２４が形成され、キャビティ２４の中には、第１のＲＦＩＣ２６および第２のＲＦＩＣ２８が埋設した高周波モジュールが開示されている。   The interval and total number of element arrangements of the transmission / reception modules are determined by the fineness of the beam control of the antenna, the maximum beam scanning angle, the transmission power, and the like. Generally, when the frequency band of a radio frequency (RF) signal such as a microwave becomes higher, the antenna element Since the interval is small, the area viewed from the antenna opening surface of the module is restricted, and further miniaturization is required. For example, in FIG. 1 of Japanese Patent Application Laid-Open No. 2002-9225 (see Patent Document 1), the BBIC 14, the memory IC 16, the crystal oscillator 18, and the surface mounting component 20 are mounted on the upper surface of the multilayer substrate 12. A high-frequency module is disclosed in which a cavity 24 is formed in the center of which is embedded with a first RFIC 26 and a second RFIC 28.

また、特開２００４−８８５０８号公報図６（特許文献２参照）には、アンテナの放射素子３１に、給電線７１とＧＮＤピン７３とを設け、放射素子３１と給電線７１とＧＮＤピン７３とを固定する段差と溝とを設けた枠状体６０に、ＲＦ基板１０の給電端子パッド９８とＧＮＤ４０とに給電線７１とＧＮＤピン７３とを押し当てることによって、給電線７１とＧＮＤピン７３とを電気的に接続したアンテナ付高周波モジュールが開示されている。   Further, in FIG. 6 (see Patent Document 2) of Japanese Patent Application Laid-Open No. 2004-88508, a feeding line 71 and a GND pin 73 are provided on the radiating element 31 of the antenna, and the radiating element 31, the feeding line 71, and the GND pin 73 are provided. By pressing the power supply line 71 and the GND pin 73 against the power supply terminal pad 98 and the GND 40 of the RF substrate 10 to the frame-like body 60 provided with the step and the groove for fixing the power supply line 71 and the GND pin 73, A high-frequency module with an antenna in which is electrically connected is disclosed.

特開２００２−９２２５号公報（第１図）Japanese Patent Laying-Open No. 2002-9225 (FIG. 1)

特開２００４−８８５０８号公報（第６図）JP 2004-88508 A (FIG. 6)

しかし、特許文献１に記載のものでは、ＲＦ信号の不要な輻射に対する対策は記載されているものの高周波モジュールから発生する熱放散設計については述べられていない。   However, in the thing of patent document 1, although the countermeasure with respect to the unnecessary radiation of RF signal is described, the heat dissipation design which generate | occur | produces from a high frequency module is not described.

また、特許文献２に記載のものでは、アンテナの放射素子にＧＮＤピンなどを設けているもののＧＮＤピンなどの放熱目的については述べられていない。   In addition, in the device described in Patent Document 2, although a GND pin or the like is provided in the radiating element of the antenna, the purpose of heat dissipation such as the GND pin is not described.

この発明は、上記のような課題を解消するためになされたもので、送受信アンプなど、多数の発熱部分を有する素子を搭載してもコンパクトで放熱性の高い送受信モジュールを提供することを目的とする。   The present invention has been made to solve the above-described problems, and an object thereof is to provide a transmission / reception module that is compact and has high heat dissipation even when an element having a large number of heat generating parts such as a transmission / reception amplifier is mounted. To do.

請求項１の発明に係る送受信モジュールは、発熱部を有する高周波伝送回路部を設けた第１の絶縁性基板と、この第１の絶縁性基板に対向して、前記発熱部に対応する位置に切り欠き部を有し、前記高周波伝送回路部に制御信号を送出する制御回路部を設けた第２の絶縁性基板と、前記第１の絶縁性基板と密着すると共に前記第１の絶縁性基板と前記第２の絶縁性基板との間に設置され、前記第２の絶縁性基板の前記切り欠き部を貫通する突出部を有する放熱板とを備えたものである。   According to a first aspect of the present invention, there is provided a transmission / reception module comprising: a first insulating substrate provided with a high-frequency transmission circuit portion having a heat generating portion; and a position corresponding to the heat generating portion facing the first insulating substrate. A second insulating substrate having a notch and provided with a control circuit unit for sending a control signal to the high-frequency transmission circuit unit; and the first insulating substrate in close contact with the first insulating substrate And the second insulating substrate, and a heat radiating plate having a protruding portion penetrating the notch portion of the second insulating substrate.

請求項２の発明に係る送受信モジュールは、前記高周波伝送回路部に対して、前記制御回路部から送出する制御信号は金属ピンを介して電気接続していることを特徴とする請求項１に記載のものである。   The transmission / reception module according to a second aspect of the present invention is characterized in that the control signal transmitted from the control circuit unit is electrically connected to the high-frequency transmission circuit unit via a metal pin. belongs to.

以上のように、請求項１に係る発明によれば、第２の絶縁性基板に切り欠き部を設け、放熱板の突出部を切り欠き部まで延長することにより、発熱部からの発熱による周辺の温度上昇が軽減され、送受信アンプなど、多数の発熱部分を有する素子を搭載してもコンパクトで放熱性の高い送受信モジュールを得ることができる。   As described above, according to the first aspect of the present invention, by providing the notch portion in the second insulating substrate and extending the protruding portion of the heat radiating plate to the notch portion, the periphery due to heat generated from the heat generating portion is obtained. Thus, a compact transmission / reception module having high heat dissipation can be obtained even when an element having a large number of heat generating parts such as a transmission / reception amplifier is mounted.

請求項２に係る発明によれば、金属ピンを用いて高周波伝送方向と垂直方向に高周波回路部と制御回路部とを接続するインタフェースとしているため、高周波回路部にインタフェース用の専用の実装エリアを確保する必要がなく、小型化が可能な送受信モジュールを得ることができる。   According to the invention of claim 2, since the interface is used to connect the high-frequency circuit unit and the control circuit unit in the direction perpendicular to the high-frequency transmission direction using metal pins, a dedicated mounting area for the interface is provided in the high-frequency circuit unit. A transmission / reception module that can be reduced in size without having to be secured can be obtained.

実施の形態１．
以下、この発明の実施の形態１について図１を用いて説明する。図１は、実施の形態１による送受信モジュールの構成展開図であり、図１（ａ）は、ＲＦ回路部側のカバーの平面図である。図１（ｂ）は、ＲＦ回路部側から見た平面図である。図１（ｃ）は、図１（ｂ）のＡ−Ａ’断面図である。図１（ｄ）は、制御回路部側から見た平面図である。図１（ｅ）は制御回路部側のカバーの平面図である。
図１（ａ）〜（ｅ）において、１は例えばセラミック材などの絶縁性基板（第１の絶縁性基板）に多層のパターンと端子を有するＲＦデバイス、２はＲＦデバイス１上に搭載した送受信アンプなどの発熱部であり、２ａは送信アンプ、２ｂは受信アンプである。３は送受切替えスイッチや移送器などのＲＦ回路部品、４はＲＦデバイス１にＲＦ信号を供給する送受信用の入出力コネクタである。コネクタ４ａが送信入力時はコネクタ４ｂが送信出力端子部となり、コネクタ４ｂが受信入力時はコネクタ４ａが受信出力端子部となる。 Embodiment 1 FIG.
Embodiment 1 of the present invention will be described below with reference to FIG. FIG. 1 is a configuration development view of a transceiver module according to Embodiment 1, and FIG. 1A is a plan view of a cover on the RF circuit unit side. FIG. 1B is a plan view seen from the RF circuit unit side. FIG.1 (c) is AA 'sectional drawing of FIG.1 (b). FIG. 1D is a plan view seen from the control circuit unit side. FIG. 1E is a plan view of the cover on the control circuit unit side.
1A to 1E, 1 is an RF device having a multilayer pattern and terminals on an insulating substrate (first insulating substrate) such as a ceramic material, and 2 is a transmitter / receiver mounted on the RF device 1. An exothermic part such as an amplifier, 2a is a transmission amplifier, and 2b is a reception amplifier. Reference numeral 3 denotes an RF circuit component such as a transmission / reception changeover switch or a transfer device. Reference numeral 4 denotes an input / output connector for transmission and reception for supplying an RF signal to the RF device 1. When the connector 4a is transmitting input, the connector 4b is a transmission output terminal portion, and when the connector 4b is receiving input, the connector 4a is a reception output terminal portion.

５はＲＦデバイス１を載置する金属の放熱板、６は放熱板５と一体化形成され、ＲＦデバイス１に搭載された発熱部２近傍の放熱板５から突出した突出部、７はプリント配線板などの絶縁性基板（第２の絶縁性基板）にパターン形成した基板であり、７ａは基板の切込み部を示し、７ｂは基板の貫通穴（端子）を示す。８は基板７に搭載した制御用ＬＳＩなどのＲＦ回路を制御する制御ＩＣ、９は能動素子を含む信号回路を形成する電子部品、１０は電源を供給し、制御信号の入出力を受け渡しする多極のコネクタ、１１はＲＦデバイス１の端子と基板７の貫通穴７ｂとを接続する燐青銅などで構成した金属ピンである。１２はアルミニウム材などの金属枠体であり、放熱板５及び放熱板の突出部６を含む。１３は金属枠体１２で囲まれた空間を密閉空間とするカバーである。   Reference numeral 5 denotes a metal heat radiating plate on which the RF device 1 is placed, 6 is a protrusion integrally formed with the heat radiating plate 5 and protrudes from the heat radiating plate 5 in the vicinity of the heat generating portion 2 mounted on the RF device 1, and 7 is a printed wiring. A substrate formed by patterning an insulating substrate such as a plate (second insulating substrate), 7a indicates a notch portion of the substrate, and 7b indicates a through hole (terminal) of the substrate. 8 is a control IC for controlling an RF circuit such as a control LSI mounted on the substrate 7, 9 is an electronic component that forms a signal circuit including an active element, and 10 is a power supply that supplies and receives control signal inputs and outputs. A polar connector 11 is a metal pin made of phosphor bronze or the like for connecting the terminal of the RF device 1 and the through hole 7 b of the substrate 7. A metal frame 12 such as an aluminum material includes a heat sink 5 and a protrusion 6 of the heat sink. Reference numeral 13 denotes a cover having a space surrounded by the metal frame 12 as a sealed space.

なお、一方の送受信用の入出力コネクタ４から入力され、複数のＲＦデバイス１を経て他方のコネクタ４へ出力される送受信信号回路をＲＦ回路部（高周波伝送回路部）と呼び、図では並列に２系統準備されている。また、多極のコネクタ１０から入力され、制御ＩＣ８や電子部品９からＲＦ回路部に制御信号を送出する基板７に構成された制御回路を制御回路部と呼ぶ。従って１３ａはＲＦ回路部側の金属枠体１２との密閉空間を構成するカバー、１３ｂは制御回路部側の金属枠体１２との密閉空間を構成するカバーである。 図中、同一符号は、同一又は相当部分を示す。   A transmission / reception signal circuit that is input from one transmission / reception input / output connector 4 and is output to the other connector 4 via a plurality of RF devices 1 is called an RF circuit unit (high-frequency transmission circuit unit). Two systems are prepared. A control circuit configured on the substrate 7 that is input from the multipolar connector 10 and transmits a control signal from the control IC 8 or the electronic component 9 to the RF circuit unit is referred to as a control circuit unit. Therefore, 13a is a cover that forms a sealed space with the metal frame 12 on the RF circuit unit side, and 13b is a cover that forms a sealed space with the metal frame 12 on the control circuit unit side. In the drawings, the same reference numerals indicate the same or corresponding parts.

次に動作について図１を用いて説明する。図１において送信時はコネクタ４ａからＲＦ送信信号を入力し、ＲＦデバイス１で信号増幅、位相制御などを行い、コネクタ４ｂよりＲＦ信号を出力する。受信時は、コネクタ４ｂからＲＦ受信信号を入力し、送信時と同様にＲＦデバイス１で信号増幅、位相制御などを行い、コネクタ４ａよりＲＦ信号を出力する。これらはＲＦ回路部に搭載した送受切替スイッチで切替が行われる。
制御回路部は、アンテナシステムからの電源信号及び制御信号を多極のコネクタ１０コネクタより入力し、制御回路部でデータ処理を行い、各ＲＦデバイスに応じた制御信号を生成した後、金属ピン１１を介してＲＦデバイス１を制御する。 Next, the operation will be described with reference to FIG. In FIG. 1, when transmitting, an RF transmission signal is input from the connector 4a, signal amplification and phase control are performed by the RF device 1, and an RF signal is output from the connector 4b. At the time of reception, an RF reception signal is input from the connector 4b, signal amplification and phase control are performed by the RF device 1 in the same manner as at the time of transmission, and an RF signal is output from the connector 4a. These are switched by a transmission / reception selector switch mounted on the RF circuit section.
The control circuit unit inputs a power supply signal and a control signal from the antenna system from the multipolar connector 10 connector, performs data processing in the control circuit unit, generates a control signal corresponding to each RF device, and then generates the metal pin 11. The RF device 1 is controlled via

図２はこの発明の実施の形態１による送受信モジュールのブロック図である。図２において送受信モジュールは１個の制御回路で２個のＲＦ回路部を制御する。ＲＦ回路部は、多段の送信用アンプや受信用アンプが搭載され、特に送信用アンプは高周波駆動による大きな発熱損失が生じる。   FIG. 2 is a block diagram of a transmission / reception module according to Embodiment 1 of the present invention. In FIG. 2, the transmission / reception module controls two RF circuit units with one control circuit. The RF circuit section is equipped with multi-stage transmission amplifiers and reception amplifiers, and in particular, the transmission amplifier causes a large heat loss due to high frequency driving.

次にＲＦ回路部と制御回路部との接続方法について説明する。図３は実施の形態１によるＲＦ回路部と制御回路部とのピンによる接続を説明する要部断面側模式図である。図３において、２０は基板７に設けられた貫通穴（スルーホール部）７ｂに挿入された金属ピン１１の一端と基板７とのパターンとを電気接続する接続手段（はんだ部）である。   Next, a method for connecting the RF circuit unit and the control circuit unit will be described. FIG. 3 is a schematic cross-sectional side view of a main part for explaining the connection of the RF circuit unit and the control circuit unit according to the first embodiment by pins. In FIG. 3, reference numeral 20 denotes a connection means (solder part) for electrically connecting one end of the metal pin 11 inserted into a through hole (through hole part) 7 b provided in the substrate 7 and the pattern of the substrate 7.

また、金属ピン１１の他端は、ＲＦデバイス１を構成するセラミックの多層構造の穴部に銀蝋などでろう付けされ、ＲＦ回路部に搭載した発熱部２や電子部品９と制御信号の電気接続がなされる。図３中、図１と同一符号は、同一又は相当部分を示す。   Also, the other end of the metal pin 11 is brazed with silver wax or the like to a hole in a ceramic multilayer structure that constitutes the RF device 1, and the heat generating part 2 and the electronic component 9 mounted on the RF circuit part are electrically controlled. A connection is made. 3, the same reference numerals as those in FIG. 1 denote the same or corresponding parts.

次に放熱板５について説明する。図４は放熱板５の突出部６の要部断面図である。突出部６は、基板７に設けられた切り欠き部７ａを貫通するように放熱板５の一部を厚み方向に延長すると共にＲＦデバイス１に搭載された送信アンプ２ａの直下に設置される。図４中、図１と同一符号は、同一又は相当部分を示す。   Next, the heat sink 5 will be described. FIG. 4 is a cross-sectional view of the main part of the protrusion 6 of the heat sink 5. The protruding portion 6 extends partly in the thickness direction so as to penetrate the notch portion 7 a provided in the substrate 7 and is installed immediately below the transmission amplifier 2 a mounted on the RF device 1. 4, the same reference numerals as those in FIG. 1 denote the same or corresponding parts.

図５は突出部６と基板７の切り欠き部７ａとの関係を説明する図である。基板７に切り欠き部７ａを設け、放熱板５の突出部６を切り欠き部７ａまで延長することにより、送信アンプ２ａからの発熱による周辺の温度上昇が軽減される。すなわち、各ＲＦデバイス１のそれぞれの発熱部２の発熱量に応じて、突出部６の大きさ・形状を変え、部分的に放熱容量を変更することにより発熱部２の放熱効果が高まる。   FIG. 5 is a diagram for explaining the relationship between the protruding portion 6 and the cutout portion 7 a of the substrate 7. By providing the substrate 7 with the notch portion 7a and extending the protruding portion 6 of the heat sink 5 to the notch portion 7a, the surrounding temperature rise due to heat generated from the transmission amplifier 2a is reduced. That is, the heat radiation effect of the heat generating portion 2 is enhanced by changing the size and shape of the protruding portion 6 and partially changing the heat radiation capacity according to the heat generation amount of each heat generating portion 2 of each RF device 1.

また、図５では、放熱板５の突出部６で挟まれた基板７の一部を細幅とすることにより、間仕切りし、Ａ部領域とＢ部領域でのＲＦ信号や制御信号の電磁干渉やスパイクノイズなどが隣接する他の回路ブロックに干渉することを防止する電磁遮蔽効果がある。なお、図５中、図１と同一符号は、同一又は相当部分を示す。   Further, in FIG. 5, a part of the substrate 7 sandwiched between the protrusions 6 of the heat sink 5 is narrowed so as to partition, and electromagnetic interference of RF signals and control signals in the A part region and the B part region. There is an electromagnetic shielding effect that prevents interference of spike noise or other adjacent circuit blocks. In FIG. 5, the same reference numerals as those in FIG. 1 denote the same or corresponding parts.

また、ＲＦ回路部と制御回路部とは、伝送線路に沿った放熱板５の底面を挟んで配置する層構成であり、ＲＦ回路部と制御回路部とが伝送線路の垂直方向に分離することになるのでＲＦ信号の制御回路部への空間的な漏れこみを抑制できる特徴を持つ。   In addition, the RF circuit unit and the control circuit unit have a layer configuration arranged with the bottom surface of the heat sink 5 along the transmission line interposed therebetween, and the RF circuit unit and the control circuit unit are separated in the vertical direction of the transmission line. Therefore, the spatial leakage of the RF signal to the control circuit unit can be suppressed.

さらにＲＦデバイス１の伝送方向と垂直方向にＲＦ回路部と制御回路部とを接続するインタフェースとしているため、ＲＦ回路部の表側にインタフェース用の専用の実装エリアを確保する必要がなく、モジュールの小型化を実現できる。   In addition, since the interface for connecting the RF circuit unit and the control circuit unit in the direction perpendicular to the transmission direction of the RF device 1 is used, it is not necessary to secure a dedicated mounting area for the interface on the front side of the RF circuit unit. Can be realized.

また、図１に示すようにＲＦ回路部の２系統を１つの制御回路部で制御することができるため、制御回路部の回路の共通化等による部品点数を削減でき、低コスト化を実現できる。   In addition, as shown in FIG. 1, since two systems of the RF circuit unit can be controlled by one control circuit unit, the number of parts can be reduced by sharing the circuit of the control circuit unit and the cost can be reduced. .

なお、実施の形態１では、ＲＦ回路が２系統に対して、１つの制御回路で構成したが、ＲＦ回路を３系統以上としても良く、逆にＲＦ回路部と制御回路部とを１対の構成としても良い。   In the first embodiment, the RF circuit is composed of one control circuit for two systems. However, the RF circuit may be composed of three or more systems, and conversely, the RF circuit unit and the control circuit unit are paired. It is good also as a structure.

実施の形態２．
実施の形態１では金属ピン１１により、ＲＦ回路部と制御回路部との接続インタフェースを基板７の貫通穴７ｂに、はんだ付けしたが、他の接続方法について実施の形態２で説明する。 Embodiment 2. FIG.
In the first embodiment, the connection interface between the RF circuit portion and the control circuit portion is soldered to the through hole 7b of the substrate 7 by the metal pin 11. Other connection methods will be described in the second embodiment.

図６は実施の形態２による送受信モジュールのＲＦ回路部と制御回路部との接続を説明する要部断面側模式図である。図６において、２１は基板７に設けられたパターンランドから金属ピン１１にウエッジボンダーを用いて金リボンなどで電気接続した接続手段（リボンボンディング部）である。はんだ材による接続手段に比べて金リボンのストレスリリーフにより振動・衝撃・熱衝撃などの外力下における接続部の信頼性を向上させることができる。従って厳しい環境条件の要求のある送受信モジュールに対して有用である。   FIG. 6 is a schematic cross-sectional side view of the relevant part for explaining the connection between the RF circuit unit and the control circuit unit of the transceiver module according to the second embodiment. In FIG. 6, reference numeral 21 denotes connection means (ribbon bonding portion) for electrically connecting the pattern land provided on the substrate 7 to the metal pin 11 by using a gold bonder or the like using a wedge bonder. Compared to the connecting means using a solder material, the stress relief of the gold ribbon can improve the reliability of the connecting portion under external force such as vibration, shock, and thermal shock. Therefore, the present invention is useful for a transmission / reception module that requires severe environmental conditions.

実施の形態３．
同様に図７に示すように金属ピン１１と基板７とを被覆線２２を介してはんだ付け接続を行う方法でも良く、実施の形態２同様に被覆線のストレスリリーフにより振動・衝撃・熱衝撃などの外力下における接続部の信頼性を向上させることができる。従って厳しい環境条件の要求のある送受信モジュールに対して有用である。 Embodiment 3 FIG.
Similarly, as shown in FIG. 7, a method of soldering and connecting the metal pin 11 and the substrate 7 via the coated wire 22 may be used. As in the second embodiment, vibration, shock, thermal shock, etc. are performed by stress relief of the coated wire. It is possible to improve the reliability of the connecting portion under external force. Therefore, the present invention is useful for a transmission / reception module that requires severe environmental conditions.

この発明の実施の形態１による送受信モジュールの構成展開図である。1 is a configuration development view of a transmission / reception module according to Embodiment 1 of the present invention. FIG. この発明の実施の形態１による送受信モジュールのブロック図である。It is a block diagram of the transmission / reception module by Embodiment 1 of this invention. この発明の実施の形態１による送受信モジュールのＲＦ回路部と制御回路部とのピンによる接続方法を説明する部分断面図である。It is a fragmentary sectional view explaining the connection method by the pin of RF circuit part and control circuit part of the transceiver module by Embodiment 1 of this invention. この発明の実施の形態１による送受信モジュールの放熱板突出部の要部断面図である。It is principal part sectional drawing of the heat sink projection part of the transmission / reception module by Embodiment 1 of this invention. この発明の実施の形態１による送受信モジュールの放熱板突出部と基板７の切り欠き部７ａとの関係を説明する図である。It is a figure explaining the relationship between the heat sink projection part of the transmission / reception module by Embodiment 1 of this invention, and the notch part 7a of the board | substrate 7. FIG. この発明の実施の形態２による送受信モジュールのＲＦ回路部と制御回路部との接続を説明する要部断面側模式図である。It is a principal part cross-section side schematic diagram explaining the connection of RF circuit part and control circuit part of the transmission / reception module by Embodiment 2 of this invention. この発明の実施の形態３による送受信モジュールのＲＦ回路部と制御回路部との接続を説明する要部断面側模式図である。It is a principal part cross-section side schematic diagram explaining the connection of RF circuit part and control circuit part of the transmission / reception module by Embodiment 3 of this invention.

符号の説明Explanation of symbols

１・・ＲＦデバイス ２・・発熱部 ２ａ・・送信アンプ ２ｂ・・受信アンプ
３・・ＲＦ回路部品 ４・・入出力コネクタ ５・・放熱板 ６・・放熱板の突出部
７・・基板（プリント配線板） ７ａ・・切り欠き部 ７ｂ・・貫通穴
８・・制御ＩＣ（制御用ＬＳＩ） ９・・電子部品 １０・・多極のコネクタ
１１・・ピン（金属ピン） １２・・金属枠体 １３・・カバー
２０・・接続手段（はんだ部）
２１・・接続手段（リボンボンディング部）
２２・・接続手段（被覆線） 1 .... RF device 2 .... Heat generation part 2a ... Transmission amplifier 2b ... Reception amplifier 3 ... RF circuit parts 4 .... Input / output connector 5 .... Heat sink 6 .... Heat plate protrusion 7 ... Printed wiring board) 7a ... Notch 7b ... Through hole
8 .. Control IC (Control LSI) 9 .. Electronic parts 10 .. Multi-pole connector 11 .. Pin (metal pin) 12 .. Metal frame 13.
20. ・ Connection means (solder part)
21 .. Connection means (ribbon bonding part)
22. ・ Connection means (coated wire)

Claims (2)

発熱部を有する高周波伝送回路部を設けた第１の絶縁性基板と、この第１の絶縁性基板に対向して、前記発熱部に対応する位置に切り欠き部を有し、前記高周波伝送回路部に制御信号を送出する制御回路部を設けた第２の絶縁性基板と、前記第１の絶縁性基板と密着すると共に前記第１の絶縁性基板と前記第２の絶縁性基板との間に設置され、前記第２の絶縁性基板の前記切り欠き部を貫通する突出部を有する放熱板とを備えた送受信モジュール。 A first insulating substrate provided with a high-frequency transmission circuit portion having a heat generating portion; and a notch portion at a position corresponding to the heat generating portion facing the first insulating substrate, the high-frequency transmission circuit A second insulating substrate provided with a control circuit section for sending a control signal to the first portion, and in close contact with the first insulating substrate and between the first insulating substrate and the second insulating substrate. And a heat radiating plate provided with a heat radiating plate having a protruding portion penetrating through the notched portion of the second insulating substrate. 前記高周波伝送回路部に対して、前記制御回路部から送出する制御信号は金属ピンを介して電気接続していることを特徴とする請求項１に記載の送受信モジュール。 The transmission / reception module according to claim 1, wherein a control signal transmitted from the control circuit unit is electrically connected to the high-frequency transmission circuit unit via a metal pin.
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WO2019176778A1 (en) * 2018-03-14 2019-09-19 株式会社村田製作所 High frequency module and communication device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06275328A (en) * 1993-03-19 1994-09-30 Fuji Elelctrochem Co Ltd Printed board lead terminal and its mounting method
JP2002280921A (en) * 2001-03-19 2002-09-27 Hitachi Kokusai Electric Inc Case for wireless unit
JP2004063861A (en) * 2002-07-30 2004-02-26 Opnext Japan Inc Optical communication apparatus, optical transmitter, optical transceiver, and optical transmission system

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06275328A (en) * 1993-03-19 1994-09-30 Fuji Elelctrochem Co Ltd Printed board lead terminal and its mounting method
JP2002280921A (en) * 2001-03-19 2002-09-27 Hitachi Kokusai Electric Inc Case for wireless unit
JP2004063861A (en) * 2002-07-30 2004-02-26 Opnext Japan Inc Optical communication apparatus, optical transmitter, optical transceiver, and optical transmission system

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