JP4564736B2 - Measuring method and measuring apparatus for semiconductor laser element - Google Patents

Description

  The present invention relates to a measuring method and a measuring apparatus for a semiconductor laser element, and more specifically, measures the electrical characteristics of each element portion with respect to a semiconductor laser element in which two element portions emitting laser light are provided on the same substrate. The present invention relates to a semiconductor laser element measuring method and measuring apparatus.

In recent years, the spread of optical discs has progressed, and the standards for optical discs are diverse. In order to optically read information from the optical disk, a laser according to the standard of the optical disk is required. For example, in order to read information from a compact disc (abbreviated CD), an infrared laser having an emission wavelength of around 780 nm is required, and a digital versatile disc (
In order to read information from Digital Versatile Disc (abbreviation DVD), a red laser having an emission wavelength of around 650 nm is required.

  When configuring an optical pickup device that can read information from two types of optical discs with different standards, two wavelengths of laser light are emitted in one package to reduce the size and cost of the device. There is a need for the appearance of semiconductor laser devices that can be used. In addition to optical disks, in laser beam printers and recording / reproducing optical disks, semiconductor laser elements that emit laser light of two wavelengths in one package, two types of lasers, one for low output and one for high output even at the same wavelength There is a demand for the appearance of semiconductor laser elements that emit light. Furthermore, a semiconductor laser element that emits two laser beams having the same wavelength and the same output is also conceivable.

  In order to meet these demands, a technique for integrating two element portions that emit laser light on one semiconductor substrate has been developed. In addition, it is necessary to develop a technique for measuring the electrical characteristics of each element portion.

  FIG. 20 is a diagram for explaining a semiconductor laser element measuring method and measuring apparatus according to the first prior art, FIG. 21 is a plan view of the semiconductor laser element 1, and FIG. 22 is a plan view of the semiconductor laser element 1. FIG. 23 is a front view as seen from the lower side of FIG. 21, and FIG. 23 is a circuit diagram when measuring the electrical characteristics of the semiconductor laser device 1. The semiconductor laser device 1 which is a measurement object in this conventional technique is configured by forming one semiconductor laser on one semiconductor substrate. In the semiconductor laser element, electrodes 2a and 2b are formed on one surface and the other surface, respectively. In the first conventional technique, the semiconductor laser element 1 is mounted on the test stage 3, the semiconductor laser element 1 is sandwiched between the test stage 3 and the test collet 4, and the semiconductor laser element 1 is energized to produce a semiconductor The electrical characteristics of the laser element 1 are measured.

  FIG. 24 is a diagram for explaining a semiconductor laser element measuring method and measuring apparatus according to the second prior art. This conventional technique is similar to the first conventional technique. In this conventional technique, a probe needle 5 is used instead of the test collet 4.

  A third conventional technique is described in Patent Document 1. Patent Document 1 describes a technique in which a probe is applied to an ohmic electrode on a desired laser chip to energize it, a laser beam emitted from the laser chip is received by a light receiving element, taken out as a signal, and quality is determined. ing.

  As a fourth conventional technique, a technique similar to the technique of Patent Document 1 is described in Patent Document 2. In Patent Document 2, a semiconductor laser element is sandwiched between a stage body using a test collet, contacts are obtained with the front and back electrodes of the semiconductor laser element, and the semiconductor laser element is energized while maintaining this connection state. In addition, a technique for obtaining a light output measurement value by measuring a main emitted light quantity through a light receiving element is described.

  FIG. 25 is a diagram for explaining a semiconductor laser device measuring method and measuring apparatus according to the fifth prior art. The semiconductor laser element 6 which is a measurement object in this conventional technique is configured by forming two semiconductor lasers on one surface of one semiconductor substrate. A common electrode 7 is formed on the other surface of the semiconductor substrate, and individual electrodes 8a and 8b are formed on the surface of each semiconductor laser facing the common electrode 7, respectively. In the fifth prior art, the semiconductor laser element 6 is mounted on the test stage 9, the two probe needles 10a and 10b are brought into contact with the individual electrodes 8a and 8b, and each semiconductor laser is energized, so that the semiconductor laser Is measuring the electrical characteristics.

Japanese Patent Laid-Open No. 5-302956 JP 2001-21446 A

  In the first conventional technique, when measuring the electrical characteristics of each semiconductor laser of a semiconductor laser element in which two semiconductor lasers are formed on one semiconductor substrate, the test collet 4 is provided with individual electrodes of the two semiconductor lasers. There is a problem that electrical characteristics of individual semiconductor lasers cannot be easily measured.

  In the second conventional technique, when measuring the electrical characteristics of each semiconductor laser of a semiconductor laser element in which two semiconductor lasers are formed on one semiconductor substrate, the probe needle is applied only to the individual electrode of one semiconductor laser. 5 cannot be brought into contact with each other, and only the electrical characteristics of one semiconductor laser can be measured.

  In the third conventional technique, when measuring the electrical characteristics of each semiconductor laser of a semiconductor laser element in which two semiconductor lasers are formed on one semiconductor substrate, only the individual electrodes of one semiconductor laser are pro- grammed. There is a problem that the bar cannot be brought into contact and only the electrical characteristics of one of the semiconductor lasers can be measured.

  In the fourth conventional technique, when measuring the electrical characteristics of each semiconductor laser of a semiconductor laser element in which two semiconductor lasers are formed on one semiconductor substrate, a test collet is used for the individual electrodes of the two semiconductor lasers. There is a problem that electrical characteristics of individual semiconductor lasers cannot be easily measured.

  In the fifth prior art, a structure for accurately positioning and standing two probe needles 10a and 10b on a semiconductor laser element 6 having a width dimension of about 200 μm and a length dimension of about 300 μm. There is a problem that is necessary. Further, in this conventional technique, the probe needles 10a and 10b are set up obliquely from the upper side with respect to the semiconductor laser element 6, so that the semiconductor laser element 6 moves when the probe needles 10a and 10b are set up. There's a problem. In addition, this conventional technique has a problem that a configuration for precisely adjusting the position and load of the probe needles 10a and 10b is required to prevent the semiconductor laser element 6 from moving. Further, in this conventional technique, the area of one surface of the individual electrode of the semiconductor laser element 6 is less than half of the area of one surface of the semiconductor substrate. Therefore, in the worst case, the probe is formed near the light emitting portion. Since the needles 10a and 10b are raised, the semiconductor lasers are distorted by the pressing force of the probe needles 10a and 10b, and the electrical characteristics of the semiconductor lasers are changed. Therefore, this conventional technique has a problem that the original electrical characteristics of the semiconductor laser cannot be measured and a problem that the reliability of the semiconductor laser element 6 is lowered.

  An object of the present invention is to simplify the configuration, to easily measure the electrical characteristics of the semiconductor laser element, and to accurately measure the electrical characteristics of the semiconductor laser element without changing the electrical characteristics of the semiconductor laser element. It is an object to provide a measurement method and a measurement apparatus for a semiconductor laser element that can be measured.

The present invention includes a substrate and two element portions provided on one surface of the substrate. Each element portion has a laser beam emitting end portion that emits laser light, and is common to the other surface of the substrate. An electrode is formed on one surface facing each of the element portions opposite to the common electrode, and is a measurement method for measuring electrical characteristics of a semiconductor laser element on which an individual electrode is formed ,
A holder having a large storage surface than the outer shape of the semiconductor laser device when viewed from the thickness direction, in a state where said common electrode and the holder of the holding surface is in contact, the placing the semiconductor laser element 1 Process ,
A second step of imaging the semiconductor laser element mounted on the holding table, recognizing the position and inclination of the semiconductor laser element, and generating data relating to the arrangement state of the semiconductor laser element;
A third step of correcting the position and tilt of the semiconductor laser element so as to be in a predetermined arrangement state based on the generated data;
The holder and the contact are moved relative to each other, and the contacts are individually brought into surface contact with each individual electrode vertically, and each element portion is energized through the holder and the contact. And a fourth step of measuring electrical characteristics for each element portion ,
In the first step, the semiconductor laser element is placed on the holding surface by protruding a part of the semiconductor laser element from the holding surface so that the image of the holding surface does not enter the imaging region.
In the second step, the semiconductor laser element measuring method is characterized in that the position and inclination of the semiconductor laser element are recognized by the outer shape of the semiconductor laser element at a portion protruding from the holding surface .

Further, the present invention includes a substrate and two element portions provided on one surface of the substrate, each element portion has a laser light emitting end for emitting laser light, and the other surface of the substrate has A common electrode is formed on one surface facing each of the element portions opposite to the common electrode .
A holding table having a holding surface larger than the outer shape of the semiconductor laser element when viewed from the thickness direction, and holding the semiconductor laser element in a state in which the common electrode is in contact with the holding surface ;
A contact that makes vertical surface contact with each individual electrode of the semiconductor laser element held by the holding table;
Over a first measurement position where the contact can come into contact with one individual electrode of the semiconductor laser element held by the holding table, and a second measurement position where the contact can come into contact with the other individual electrode of the semiconductor laser element, Moving means for relatively moving the holding table and the contact and correcting the position and inclination of the semiconductor laser element held by the holding table ;
A means for energizing the semiconductor laser element through a holding base and a contact, and measuring the electrical characteristics of the semiconductor laser element ;
Image recognition means for imaging the semiconductor laser element held by the holding table, recognizing the position and inclination of the semiconductor laser element, and generating data relating to the arrangement state of the semiconductor laser element;
Control means for controlling the moving means so that the semiconductor laser element held by the holding base is in a predetermined arrangement state based on the data generated by the image recognition means,
The semiconductor laser element is placed on the holding surface by protruding a part of the semiconductor laser element so that the image of the holding surface does not enter the imaging region of the image recognition means, and the image recognition means Is a semiconductor laser element measuring apparatus that recognizes the position and inclination of the semiconductor laser element from the outer shape of the semiconductor laser element at a portion protruding from the holding surface .

  According to the present invention, the relative movement amount of the holding table and the contact by the moving means can be set for each element portion.

According to the present invention, the moving means has a θ moving mechanism for correcting the tilt of the semiconductor laser element and an XY moving mechanism for correcting the position of the semiconductor laser element based on the data generated by the image recognition means. It is characterized by.

  In addition, the present invention includes an observation unit that can observe a contact state between the semiconductor laser element held by the holding table and the contact.

  Further, the present invention is characterized in that the contact can adsorb a semiconductor laser element and is used when the semiconductor laser element is transported.

Further, the present invention is characterized in that measurement conditions can be set for each element portion.
Further, the present invention is characterized in that, when the electrical characteristics of one element portion are measured and determined to be defective, it can be specified whether or not the electrical characteristics of the other element portion are to be measured.

  Further, the present invention is characterized in that the moving means can be switched between a state in which the holding table is moved and a state in which the holding table is not moved.

According to the present invention, the semiconductor laser element is held by the holding stand having a holding surface larger than the outer shape of the semiconductor laser element when viewed from the thickness direction . At this time, the common electrode of the semiconductor laser element is in contact with the holding surface of the holding table. In such a state, the holding base and the contact are moved relative to each other, and the contact is brought into surface contact with each individual electrode vertically, and each element is connected via the holding base and the contact. Energization is performed for each part, and electrical characteristics are measured for each element part. Thus, since each element part is energized and the electrical characteristics are measured for each element part, the electrical characteristics of each element part can be easily measured.

  More specifically, in a state where the semiconductor laser element is held by the holding base, the holding base and the contact are relatively moved, so that the contact is in surface contact with only one individual electrode, and the contact is the other. It is possible to realize a state where only the individual electrodes are in surface contact. In a state where the contact is in surface contact with only one individual electrode, it is possible to measure the electrical characteristics of one element portion by energizing one element portion via the holding base and the contact. In a state where the contact is in surface contact with only the other individual electrode, the other element portion can be energized through the holding base and the contact, and the electrical characteristics of the other element portion can be measured.

Since the contact is in surface contact with the individual electrode, the pressing force applied to the individual electrode and the element portion by the contact is dispersed. This prevents a problem that a large force is locally applied to the individual electrode and the element part to cause distortion in the element part, and prevents a problem that the electrical characteristics of the element part changes. It is. Therefore, it is possible to accurately measure the original electrical characteristics of the element portion, and to prevent a decrease in the reliability of the semiconductor laser element. In addition, since the contact makes surface contact with the individual electrode perpendicularly, when the contact makes surface contact with the individual electrode, the contact does not cause a problem that the semiconductor laser element is displaced with respect to the holding table. . Accordingly, the configuration for precise position adjustment and load adjustment as in the fifth prior art is not required, and the configuration of the apparatus for realizing the semiconductor laser element measurement method of the present invention is simplified.
Further, when imaging the semiconductor laser element held by the holding table, recognizing the position and inclination of the semiconductor laser element, and generating data relating to the arrangement state of the semiconductor laser element, the image recognition means includes the imaging region in the imaging area. A part of the semiconductor laser element is protruded from the holding surface so that the image of the holding surface does not enter, and the semiconductor laser element is placed on the holding surface, and the image recognition means is a portion of the semiconductor protruding from the holding surface. Since the position and inclination of the semiconductor laser element are recognized by the outer shape of the laser element, the outer peripheral shape of the semiconductor laser element can be recognized with high accuracy, and the position and inclination of the semiconductor laser element can be recognized with high accuracy. In addition, since the image of the holding surface can be excluded from the imaging range, the data amount of the image recognition process can be reduced.

According to the invention, the semiconductor laser element is held by the holding table having a holding surface larger than the outer shape of the semiconductor laser element when viewed from the thickness direction . At this time, the common electrode of the semiconductor laser element is in contact with the holding surface of the holding table. In such a state, the holding platform and the first measurement position where the contact can come into contact with one individual electrode of the semiconductor laser element and the second measurement position where the contact can come into contact with the other individual electrode of the semiconductor laser element. The contact is relatively moved by the moving means, and the contact is individually surface-contacted perpendicularly to each individual electrode of the semiconductor laser element. The measurement means can energize each element portion through the holding base and the contact, and can measure the electrical characteristics for each element portion. As a result, the electrical characteristics of each element portion can be easily measured.

Since the contact is in surface contact with the individual electrode, the pressing force applied to the individual electrode and the element portion by the contact is dispersed. This prevents a problem that a large force is locally applied to the individual electrode and the element part to cause distortion in the element part, and prevents a problem that the electrical characteristics of the element part changes. It is. Therefore, it is possible to accurately measure the original electrical characteristics of the element portion, and to prevent a decrease in the reliability of the semiconductor laser element. In addition, since the contact makes surface contact with the individual electrode perpendicularly, when the contact makes surface contact with the individual electrode, the contact does not cause a problem that the semiconductor laser element is displaced with respect to the holding table. . Therefore, the configuration for precise position adjustment and load adjustment as in the fifth prior art becomes unnecessary, and the configuration of the apparatus is simplified.
Further, when imaging the semiconductor laser element held by the holding table, recognizing the position and inclination of the semiconductor laser element, and generating data relating to the arrangement state of the semiconductor laser element, the image recognition means includes the imaging region in the imaging area. A part of the semiconductor laser element is protruded from the holding surface so that the image of the holding surface does not enter, and the semiconductor laser element is placed on the holding surface, and the image recognition means is a portion of the semiconductor protruding from the holding surface. Since the position and inclination of the semiconductor laser element are recognized by the outer shape of the laser element, the outer peripheral shape of the semiconductor laser element can be recognized with high accuracy, and the position and inclination of the semiconductor laser element can be recognized with high accuracy. In addition, since the image of the holding surface can be excluded from the imaging range, the data amount of the image recognition process can be reduced.

  Further, according to the present invention, since the relative movement amount of the holding table and the contact by the moving means can be set for each element portion, the size of the semiconductor laser element, the outer shape and the outer dimension of the contact Regardless of this, the contact can be brought into surface contact with each individual electrode of the semiconductor laser element, and the electrical characteristics can be measured for each element portion.

According to the invention, the moving means has a θ moving mechanism and an XY moving mechanism, and corrects the tilt of the semiconductor laser element by the θ moving mechanism based on the data generated by the image recognition means. The position of the element can be corrected by the XY movement mechanism.

  According to the invention, the contact state between the semiconductor laser element held by the holding table and the contact can be observed by the observation means. Thus, the operator can visually confirm the contact state.

  According to the present invention, the contact can adsorb the semiconductor laser element and is used when transporting the semiconductor laser element. Therefore, the contact member and the contact for transporting the semiconductor laser element are separated from each other. Compared to the configuration, the moving distance and moving time of the conveying member and the contact can be shortened. In addition, the mechanism of the apparatus can be simplified.

  In addition, according to the present invention, since the measurement conditions can be set for each element portion, even if the electric characteristics of each element portion are different, the electric characteristics of each element portion are measured under a desired measurement condition. be able to.

  In addition, according to the present invention, when the electrical characteristics of one element portion are measured and determined to be defective, it can be specified whether or not the other element portion is to be measured. When one element part is defective, even if the other element part is a non-defective product, the semiconductor laser element is defective. Therefore, if it is determined as defective by measuring the electrical characteristics of one element portion, the measurement is terminated by measuring the semiconductor laser element as a defective product without measuring the electrical characteristics of the other element portion. Measurement time can be shortened.

  Further, according to the present invention, the moving means can be switched between a state in which the holding base is moved and a state in which the holding base is not moved. In addition to measuring the electrical characteristics of the semiconductor laser element including the semiconductor laser element, the electrical characteristics of the semiconductor laser element including one element portion can be measured without moving the holding table. Therefore, the versatility of the apparatus is greatly improved.

  FIG. 1 is a front view showing a simplified configuration of a semiconductor laser element measuring apparatus 21 according to an embodiment of the present invention. FIG. 2 is a plan view of the semiconductor laser element 22, and FIG. 3 is a front view of the semiconductor laser element 22 as viewed from below in FIG. The semiconductor laser element 22 has a substantially rectangular parallelepiped shape. The semiconductor laser element 22 has, for example, a width dimension W1 of 250 μm, a length dimension W2 of 350 μm, and a thickness dimension W3 of 100 μm. More specifically, the semiconductor laser element 22 includes a substrate 23 made of a semiconductor and two element portions 24 a and 24 b provided on one surface of the substrate 23.

  The shape of the substrate 23 viewed from the thickness direction is a rectangle. A common electrode 25 is formed on the other surface of the substrate 23. The element portions 24 a and 24 b are provided at intervals in the width direction of the substrate 23. Each element portion 24a, 24b has light emitting regions 26a, 26b extending in the length direction of the substrate 23, respectively. Both end portions of the light emitting regions 26a and 26b of the element portions 24a and 24b are laser light emitting end portions 27a and 27b that emit laser light. Individual electrodes 28a and 28b are formed on one surface of the element portions 24a and 24b facing the common electrode 25, respectively. The interval W11 between the individual electrodes 28a and 28b of the element portions 24a and 24b is, for example, 110 μm.

  When such a semiconductor laser element 22 is energized through the individual electrode 28a and the common electrode 25 of one element part 24a, it emits laser light from the laser light emission end portion 27a of one element part 24a, and the other When energized through the individual electrode 28b and the common electrode 25 of the element portion 24b, laser light is emitted from the laser light emission end portion 27b of the other element portion 24b.

  A semiconductor laser element measuring device 21 (hereinafter sometimes simply referred to as “measuring device 21”) includes a supply stage 31, a measuring stage 32, a storage stage 33, a conveying means 34, and a measuring means. 35, a first image recognition unit 36 that is an image recognition unit, a second image recognition unit 37, and an observation unit 38.

  The supply stage 31 includes a supply mounting table 41 and supply moving means 42. The supply mounting table 41 has a horizontal mounting surface 43 that faces upward. A plurality of semiconductor laser elements 22 can be mounted on the mounting surface 43. On the mounting surface 43 of the supply mounting table 41, the semiconductor laser elements 22 before measurement are arranged in a two-dimensional matrix, for example. The supply moving means 42 is arranged in the X axis and Y axis directions (hereinafter simply referred to as “X direction” and “Y direction”) orthogonal to each other in a horizontal virtual plane. 41 can be moved.

  The measurement stage 32 includes a measurement holding base 46 that is a holding base and a measurement moving means 47 that is a moving means. The measurement holding base 46 is substantially cylindrical, and extends along an axis 48 parallel to the Z axis perpendicular to the X axis and the Y axis. The measurement holding base 46 has a horizontal holding surface 49 facing upward. One semiconductor laser element 22 can be mounted on the holding surface 49. The measurement holding base 46 is formed with a suction hole 50 that passes through the measurement holding base 46 along an axis 48 parallel to the Z axis. A suction source is connected to the measurement holder 46. By the action of the suction source, the measurement holding base 46 can hold the semiconductor laser element 22 placed on the holding surface 49 of the measurement holding base 46 by vacuum suction. The measuring moving means 47 has an XY moving mechanism and a θ moving mechanism, moves the measuring holding base 46 in the X and Y directions, and moves the measuring holding base 46 around the axis 48 of the measuring holding base 46. It can be moved in the direction θ.

  The storage stage 33 includes a storage platform 51 and storage movement means 52. The storage platform 51 has a horizontal mounting surface 53 that faces upward. A plurality of semiconductor laser elements 22 can be mounted on the mounting surface 53. The measured semiconductor laser elements 22 are arranged in a two-dimensional matrix, for example, on the mounting surface 53 of the storage platform 51. The storage moving means 52 can move the storage platform 51 in the X and Y directions.

  Each of these stages 31 to 33 is provided at the same position in the Y direction. Moreover, the measurement stage 32 is provided between the supply stage 31 and the storage stage 33. The interval between the supply stage 31 and the measurement stage 32 and the interval between the storage stage 33 and the measurement stage 32 are the same.

  The conveying means 34 includes a moving body 56, a supply collet 57, a measurement collet 58 as a contact, a displacement drive means 59, a supply lift drive means 60, and a measurement lift drive means 61. . The moving body 56 is provided above the stages 31 to 33 so as to be slidable in the X direction. The moving body 56 extends in the X direction. A supply collet 57 is provided at one end of the moving body 56, and a measurement collet 58 is provided at the other end of the moving body 56.

  The supply collet 57 is substantially cylindrical and extends along an axis 64 parallel to the Z axis. The supply collet 57 has a horizontal holding surface 65 facing downward. The supply collet 57 is formed with a suction hole 66 that passes through the supply collet 57 along an axis 64 parallel to the Z-axis. A suction source is connected to the supply collet 57. By the action of the suction source, the supply collet 57 can hold the semiconductor laser element 22 in contact with the holding surface 65 of the supply collet 57 by vacuum suction.

  The measurement collet 58 is substantially cylindrical and extends along an axis 69 parallel to the Z axis. The measurement collet 58 has a horizontal holding surface 70 facing downward. The measurement collet 58 is formed with a suction hole 71 passing through the measurement collet 58 along an axis 69 parallel to the Z-axis. A suction source is connected to the measurement collet 58. Due to the action of the suction source, the measurement collet 58 can hold the semiconductor laser element 22 in contact with the holding surface 70 of the measurement collet 58 by vacuum suction.

  The displacement driving means 59 moves the moving body 56, and hence the supply collet 57 and the measuring collet 58 provided on the moving body 56 in the X direction. More specifically, the displacement driving means 59 includes a delivery position 74 such that the axis 64 of the supply collet 57 coincides with the axis 48 of the measurement holding base 46 disposed at the predetermined position 73, and the axis of the measurement collet 58. 69 moves the moving body 56 over the receiving position 75 that coincides with the axis 48 of the measurement holding base 46 disposed at the predetermined position 73. The predetermined position 73 is the position of the measurement holding base 46 when the supply collet 57 delivers the semiconductor laser element 22 to the measurement holding base 46, and the measurement collet 58 holds the semiconductor laser element 22 for measurement. It is also the position of the measurement holding base 46 when it is received from the base 46.

  The supply raising / lowering driving means 60 raises and lowers the supply collet 57 along the axis 64 of the supply collet 57. That is, the supply raising / lowering driving means 60 moves the supply collet 57 in the Z-axis direction (hereinafter sometimes simply referred to as “Z direction”). More specifically, the supply raising / lowering driving means 60 includes a supply collet extending over a protruding position 77 where the supply collet 57 protrudes downward from the moving body 56 and a retreat position 78 where the supply collet 57 is retracted to the moving body 56. 57 is moved. When the moving body 56 is disposed at the receiving position 75 and the supply collet 57 is disposed at the protruding position 77, the supply collet 57 is mounted on the mounting surface 43 of the supply mounting table 41. The element 22 can be contacted. When the movable body 56 is disposed at the delivery position 74 and the supply collet 57 is disposed at the protruding position 77, the supply collet 57 is placed on the holding surface 49 of the measurement holding base 46. 22 can be contacted.

  The measurement raising / lowering driving means 61 raises and lowers the measurement collet 58 along the axis 69 of the measurement collet 58. That is, the measurement raising / lowering driving means 61 moves the measurement collet 58 in the Z direction. More specifically, the measurement raising / lowering driving means 61 includes a measurement collet extending over a projecting position 77 where the measurement collet 58 protrudes downward from the moving body 56 and a retracted position 78 where the measurement collet 58 is retracted to the moving body 56. 58 is moved. When the movable body 56 is disposed at the receiving position 75 and the measurement collet 58 is disposed at the protruding position 77, the measurement collet 58 is placed on the holding surface 49 of the measurement holding base 46. 22 can be contacted. When the moving body 56 is disposed at the delivery position 74 and the measurement collet 58 is disposed at the projecting position 77, the measurement collet 58 is mounted on the mounting surface 53 of the storage platform 51. The element 22 can be contacted.

  The measuring means 35 includes a laser drive power supply 81 and a light detection unit 82. The laser drive power supply 81 is electrically connected to the measurement collet 58 and the measurement holding base 46. The laser drive power supply 81 can energize the semiconductor laser element 22 via the measurement collet 58 and the measurement holding base 46. The light detection unit 82 detects the light emission amount of the semiconductor laser element 22. More specifically, the light detection unit 82 includes a photodiode 83 that is a light receiving element and a light detection circuit 84. The photodiode 83 is electrically connected to the light detection circuit 84. The photodiode 83 is provided at a position where the laser light emitted from the laser light emitting ends 27a and 27b of the semiconductor laser element 22 can be received when the semiconductor laser element 22 is energized. The photodiode 83 gives information based on the amount of received laser light to the light detection circuit 84. The light detection circuit 84 detects the light emission amount of the semiconductor laser element 22 based on the information from the photodiode 83 and measures the electrical characteristics.

  In the present embodiment, the electrical characteristics of the semiconductor laser element 22 measured by the measuring device 21 are current-light output characteristics. Specifically, the measuring device 21 measures the light output from the semiconductor laser element 22 by the light detection unit 82 while gradually increasing the current applied to the semiconductor laser element 22 by the laser driving power source 81. The quality of the semiconductor laser element 22 is determined by whether or not the amount of current applied to the semiconductor laser element 22 is within the inspection standard when the light output from the semiconductor laser element 22 is a predetermined light output.

  FIG. 4 is a front view showing the first image recognition means 36. FIG. 5 is a plan view showing an arrangement state of the semiconductor laser elements 22 held by the measurement holding base 46. FIG. 5 (1) shows an arrangement state of the semiconductor laser elements 22 before correction, and FIG. ) Shows the arrangement state of the semiconductor laser element 22 after correction. The first image recognition unit 36 includes a first camera 86, a first image processing unit 87, and a first display unit 88.

  The first camera 86 is arranged so as to face the holding surface 49 of the measurement holding base 46, and can image the semiconductor laser element 22 held by the measurement holding base 46. Data captured by the first camera 86 is given to the first image processing unit 87. The first image processing unit 87 displays the imaging data from the first camera 86 on the first display unit 88. The first image processing unit 87 recognizes the arrangement state of the semiconductor laser element 22 based on the imaging data from the first camera 86 and generates first data related to the arrangement state of the semiconductor laser element 22. This first data is given to the control means 90 described later. The control means 90 controls the measurement moving means 47 based on the first data. In this way, the position of the measurement holding base 46 by the measurement moving means 47 is controlled by the control means 90 so that the semiconductor laser element 22 is in a predetermined arrangement state as shown in FIG. .

  The predetermined arrangement state is such that each light emitting region 26a, 26b of the semiconductor laser element 22 extends in the Y direction and the semiconductor laser element 22 is at a predetermined relative position with respect to the photodiode 83. 22 are arranged. In the present embodiment, the position 91 of the measurement holding base 46 when the semiconductor laser element 22 held by the measurement holding base 46 is in the predetermined arrangement state may be referred to as an initial position 91.

  FIG. 6 is a diagram showing a portion of the semiconductor laser element 22 recognized for generating the first data. FIG. 6A shows a case where the individual electrodes 28a and 28b are recognized, and FIG. 2) shows an example when the outer shape of the semiconductor laser element 22 is recognized, and FIG. 6 (3) shows another example when the outer shape of the semiconductor laser element 22 is recognized. In order to recognize the arrangement state of the semiconductor laser element 22, the individual electrodes 28a and 28b may be recognized as shown in FIG. 6 (1), and also in FIGS. 6 (2) and 6 (3). As shown, the outer shape of the semiconductor laser element 22 may be recognized. In FIG. 6 (3), the semiconductor laser element 22 is placed on the holding surface 49 of the measurement holding table 46 so that the semiconductor laser element 22 protrudes from the holding surface 49 of the measurement holding table 46. So that the image of the measurement holding base 46 does not enter. Thus, the measurement holding base 46 may be made smaller than the semiconductor laser element 22 so that the image of the measurement holding base 46 does not enter the image recognition area 92.

  The second image recognition unit 37 includes a second camera 93, a second image processing unit 94, and a second display unit 95. The second camera 93 is disposed so as to face the mounting surface 43 of the supply mounting table 41, and can image the semiconductor laser element 22 mounted on the mounting surface 43 of the supply mounting table 41. Data captured by the second camera 93 is provided to the second image processing unit 94. The second image processing unit 94 displays the image data from the second camera 93 on the second display unit 95. The second image processing unit 94 recognizes the arrangement state of the semiconductor laser element 22 based on the imaging data from the second camera 93 and generates second data related to the arrangement state of the semiconductor laser element 22. This second data is given to the control means 90 described later. The control means 90 controls the supply moving means 42 based on the second data.

  FIG. 7 is a diagram showing a positional relationship between the semiconductor laser element 22 and the measurement collet 58. FIG. 7A shows a state in which the semiconductor laser element 22 is disposed at the initial position 91 with respect to the measurement collet 58. 7 (2) shows a state when measuring the electrical characteristics of one element portion 24a, and FIG. 7 (3) shows a state when measuring the electrical characteristics of the other element portion 24b. FIG. 8 is a circuit diagram when measuring the electrical characteristics of one element portion 24a. After the semiconductor laser element 22 before the measurement is placed on the measurement holding base 46, the measurement holding base 46 is in an initial state where the semiconductor laser element 22 is in a predetermined arrangement state as shown in FIG. Arranged at position 91.

  When measuring the electrical characteristics of one element portion 24 a, the measurement holding base 46 is disposed at the first measurement position 98. The first movement amount from the initial position 91 to the first measurement position 98 is set in advance. At the first measurement position 98, as shown in FIG. 7 (2), the measurement collet 58 is in surface contact with only one individual electrode 28a. In the present embodiment, about 5% to about 30% of the area A of the holding surface 70 at the tip of the measurement collet 58 is in contact with the one individual electrode 28a. This disperses the pressing force from the holding surface 70 to the one individual electrode 28a, suppresses the occurrence of distortion during measurement of the one element portion 24a, and the influence of the pressing force on the electrical characteristics is minimized. It is trying to become. As an example, the holding surface 70 of the measurement collet 58 is circular on a virtual plane perpendicular to the axis 69 of the measurement collet 58, and the diameter thereof is about 1. mm of the width dimension W 1 of the semiconductor laser element 22. It is selected from 1 times to about 3.0 times.

  When measuring the electrical characteristics of the other element portion 24 b, the measurement holding base 46 is disposed at the second measurement position 99. The second movement amount from the initial position 91 to the second measurement position 99 is set in advance. At the second measurement position 99, as shown in FIG. 7 (3), the measurement collet 58 is in surface contact only with the other individual electrode 28b. In the present embodiment, about 5% to about 30% of the area A of the holding surface 70 at the tip of the measurement collet 58 is in contact with the other individual electrode 28b. This disperses the pressing force from the holding surface 70 to the other individual electrode 28b, suppresses the occurrence of distortion during measurement of the other element portion 24b, and the influence of the pressing force on the electrical characteristics is minimized. It is trying to become.

  FIG. 9 is a diagram showing a positional relationship between the observation means 38 and the semiconductor laser element 22, and FIG. 10 is a diagram showing a contact state observed by the observation means 38. The observation means 38 is realized by a microscope, for example. The observation means 38 is arranged at substantially the same position as the measurement holding base 46 in the X direction, and is arranged on one side in the Y direction with respect to the measurement holding base 46. Moreover, the observation means 38 is arranged above the measurement holding base 46 and can observe the contact state between the semiconductor laser element 22 and the measurement collet 58 from obliquely above. As a result, the operator can visually confirm the contact state as shown in FIG. The observation means 38 is not necessarily realized by a microscope, and may be realized by a CCD camera, for example.

  FIG. 11 is a block diagram showing an electrical configuration of the measuring device 21. The control means 90 realized by a microcomputer or the like is given the output of the input means 101 operated by the operator, the output of the first image recognition means 36, and the output of the second image recognition means 37, respectively. As described above, the control unit 90 controls the supply moving unit 42, the measurement moving unit 47, and the storage moving unit 52, respectively. The control means 90 controls the displacement driving means 59 and further controls the supply raising / lowering driving means 60 and the measurement raising / lowering driving means 61. The control unit 90 controls the laser drive power supply 81. The first and second movement amounts and the measurement conditions of the element portions 24a and 24b are set by operating the input means 101 by the operator.

  12 is a flowchart for explaining the operation of the control means 90 shown in FIG. 11, FIG. 13 is a flowchart for explaining the operation of the control means 90 following FIG. 12, and FIG. It is a flowchart for demonstrating the operation | movement following FIG. FIG. 15 is a diagram for explaining the supply operation of the measurement device 21, FIG. 16 is a diagram for explaining the measurement operation of the measurement device 21, and FIG. 17 is for explaining the storage operation of the measurement device 21. FIG. With reference to these FIG. 12 to FIG. 17, a measuring method of the semiconductor laser element will be described.

  Before the operation of the measuring device 21 is started, the moving body 56 is disposed at the delivery position 74, the supply collet 57 and the measurement collet 58 are disposed at the retracted position 78, and the measurement holding base 46 is disposed at the predetermined position 73. Has been. A plurality of semiconductor laser elements 22 whose electrical characteristics are to be measured are mounted on the mounting surface 43 of the supply mounting table 41, and an operation for measuring the electrical characteristics of the semiconductor laser elements 22 is started in step a1. Then, the process proceeds to step a2. In step a2, the moving body 56 is moved from the delivery position 74 to the reception position 75 by the displacement driving means 59. In the next step a <b> 3, the supply collet 57 is moved from the retracted position 78 to the protruding position 77 by the supply lifting drive means 60. In the next step a4, adsorption of the semiconductor laser element 22 by the supply collet 57 is started.

  In the next step a5, the supply collet 57 is moved from the protruding position 77 to the retracted position 78 by the supply lifting drive means 60. In the next step a6, the moving body 56 is moved from the receiving position 75 to the delivery position 74 by the displacement driving means 59. In the next step a 7, the supply collet 57 is moved from the retracted position 78 to the protruding position 77 by the supply raising / lowering driving means 60. In the next step a8, the adsorption of the semiconductor laser element 22 by the supply collet 57 is completed. In steps a4 to a8, the semiconductor laser element 22 held by the supply collet 57 is transferred from the supply mounting table 41 to the measurement holding table 46 as shown in FIG. In the next step a9, the adsorption of the semiconductor laser element 22 by the measurement holding base 46 is started. In the next step a <b> 10, the supply collet 57 is moved from the protruding position 77 to the retracted position 78 by the supply lifting drive means 60.

  In the next step a11, as shown in FIG. 16A, the moving body 56 is moved from the delivery position 74 to the reception position 75 by the displacement driving means 59. At this time, the measurement holding base 46 is moved by the measurement moving means 47 to the initial position 91 where the semiconductor laser element 22 held by the measurement holding base 46 is in a predetermined arrangement state. More specifically, the arrangement state of the semiconductor laser element 22 held by the measurement holding base 46 is recognized by the first image recognition means 36. Based on the first data from the first image recognition means 36, the control means 90 controls the position of the measurement holding base 46 so that the semiconductor laser element 22 is in a predetermined arrangement state. Thereafter, the steps a3 to a5 are executed.

  In the next step a12, the measurement holder 46 is moved from the initial position 91 to the first measurement position 98 by the measurement moving means 47 as shown in FIG. In the next step a13, as shown in FIG. 16 (3), the measurement collet 58 is moved from the retracted position 78 to the protruding position 77 by the measurement raising / lowering driving means 61. In the next step a14, one element portion 24a is energized by the laser driving power supply 81 via the measurement holding base 46 and the measurement collet 58, and the electrical characteristics of the one element portion 24a are measured by the light detection unit 82. . In the next step a15, as shown in FIG. 16 (4), the measurement collet 58 is moved from the projecting position 77 to the retracted position 78 by the measurement raising / lowering driving means 61.

  In the next step a16, as shown in FIG. 16 (5), the measurement holding means 46 is moved from the first measurement position 98 to the second measurement position 99 by the measurement moving means 47. In the next step a17, as shown in FIG. 16 (6), the measurement collet 58 is moved from the retracted position 78 to the protruding position 77 by the measurement raising / lowering driving means 61. In the next step a18, the other element portion 24b is energized via the measurement holding base 46 and the measurement collet 58 by the laser drive power supply 81, and the electrical characteristics of the other element portion 24b are measured by the light detection portion 82. . In the next step a19, as shown in FIG. 16 (7), the measurement collet 58 is moved from the projecting position 77 to the retracted position 78 by the measurement raising / lowering driving means 61. In the next step a20, as shown in FIG. 16 (8), the measurement holding base 46 is moved from the second measurement position 99 to the predetermined position 73 by the measurement moving means 47.

  In the next step a 21, the measurement collet is moved from the retracted position 78 to the protruding position 77 by the measurement raising / lowering driving means 61. In the next step a22, the adsorption of the semiconductor laser element 22 by the measurement holding base 46 is completed. In the next step a23, adsorption of the semiconductor laser element 22 by the measurement collet 58 is started. In the next step a24, the measurement collet 58 is moved from the protruding position 77 to the retracted position 78 by the measurement raising / lowering driving means 61. In the next step a25, the moving body 56 is moved from the receiving position 75 to the delivery position 74 by the displacement driving means 59. Next, in step a 26, the measurement collet 58 is moved from the retracted position 78 to the protruding position 77 by the measuring lift driving means 61, and the supply collet 57 is moved from the retracted position 78 to the protruding position 77 by the supply lifting drive means 60. Moved to. In the next step a27, the adsorption of the semiconductor laser element 22 by the measurement collet 58 is completed, and the adsorption of the semiconductor laser element 22 by the supply collet 57 is completed. In steps a23 to a27, the semiconductor laser element 22 held by the measurement collet 58 is transferred from the measurement holder 46 to the storage platform 51 as shown in FIG.

  In the next step a28, adsorption of the semiconductor laser element 22 by the measurement holding base 46 is started. In the next step a29, the measurement collet 58 is moved from the protruding position 77 to the retracted position 78 by the measuring lift driving means 61, and the supply collet 57 is moved from the protruding position 77 to the retracted position 78 by the supply lifting drive means 60. Moved to. Thereafter, steps a11 to a29 are repeatedly executed until the electrical characteristics of all the semiconductor laser elements 22 mounted on the mounting surface 43 of the supply mounting table 41 are measured. In the next step a30, the operation for measuring the electrical characteristics of the semiconductor laser element 22 is terminated.

  In step a13, the operator visually confirms the contact state between the semiconductor laser element 22 and the measurement collet 58 using the observation means 38, and when the contact state is in an undesired state, the input means 101 To change the set value of the first movement amount to correct the contact state to a desired state. In step a17, the operator visually checks the contact state between the semiconductor laser element 22 and the measurement collet 58 using the observation unit 38, and when the contact state is in an undesired state, the input unit The contact state can be corrected to a desired state by operating 101 to change the set value of the second movement amount. It is not necessary to check the contact state for each semiconductor laser element 22, and it is sufficient to perform the initial setting for correcting the calculation error of the first image recognition unit 36 and the error of the outer shape of the measurement collet 58. .

  In the present embodiment, when the electrical characteristics of one element portion 24a are measured and determined to be defective, the operator operates the input means 101 to determine whether or not to measure the other element portion 24b. Can be specified. When one element portion 24a is defective, the semiconductor laser element 22 is defective even if the other element portion 24b is non-defective. Therefore, when the electrical characteristics of one element portion 24a are measured and determined to be defective, the measurement is completed using the semiconductor laser element 22 as a defective product without measuring the electrical characteristics of the other element portion 24b. As a result, the measurement time can be shortened.

  Further, in the present embodiment, when the input means 101 is operated by the operator, the state can be switched between a state in which the measurement holding base 46 is moved and a state in which the measurement holding base 46 is not moved. That is, in the present embodiment, when measuring the electrical characteristics of the semiconductor laser element 22, the measurement holding base 46 is moved from the initial position 91 to the first and second measurement positions 98 and 99, and the initial position 91 is set. It is possible to switch to the state to be maintained. Accordingly, the electrical characteristics of the semiconductor laser element 22 including the two element portions 24a and 24b are measured in a state where the measurement holding base 46 is moved, and one element portion is included in a state where the measurement holding base 46 is not moved. The electrical characteristics of the semiconductor laser element can be measured. Thus, the versatility of the measuring device 21 is significantly improved.

  As described above, according to the present embodiment, the semiconductor laser element 22 is held by the measurement holding base 46. At this time, the common electrode 25 of the semiconductor laser element 22 and the measurement holding base 46 are in contact with each other. In such a state, the measurement holding base 46 and the measurement collet 58 are moved relative to each other, and the measurement collet 58 is brought into surface contact with the individual electrodes 28a and 28b individually and vertically. The element parts 24a and 24b are energized through the measurement holding base 46 and the measurement collet 58, and the electrical characteristics are measured for each of the element parts 24a and 24b. Thus, since each element part 24a, 24b is energized and an electrical characteristic is measured for each element part 24a, 24b, the electrical characteristic of each element part 24a, 24b can be measured easily.

  More specifically, the measurement collet 58 is moved to one individual electrode 28a by relatively moving the measurement support base 46 and the measurement collet 58 while the semiconductor laser element 22 is held by the measurement support base 46. It is possible to realize a state in which only the surface is in surface contact and a state in which the measurement collet 58 is in surface contact only with the other individual electrode 28b. In a state where the measurement collet 58 is in surface contact with only one individual electrode 28a, the one element portion 24a is energized through the measurement holding base 46 and the measurement collet 58, and the electrical characteristics of the one element portion 24a are changed. Can be measured. In a state in which the measurement collet 58 is in surface contact with only the other individual electrode 28b, the other element portion 24b is energized through the measurement holding base 46 and the measurement collet 58, and the electrical characteristics of the other element portion 24b are changed. Can be measured.

  Since the measurement collet 58 is in surface contact with the individual electrodes, the pressing force that the measurement collet 58 applies to the individual electrodes and the element portions is dispersed. This prevents a problem that a large force is locally applied to the individual electrode and the element part to cause distortion in the element part, and prevents a problem that the electrical characteristics of the element part changes. It is. Therefore, the original electrical characteristics of the element portion can be accurately measured, and the reliability of the semiconductor laser element 22 can be prevented from being lowered. In addition, since the measurement collet 58 is in surface contact with the individual electrode perpendicularly, when the measurement collet 58 is in surface contact with the individual electrode, the measurement collet 58 places the semiconductor laser element 22 against the measurement holding base 46. Therefore, there will be no inconvenience of displacement. Therefore, the configuration for precise position adjustment and load adjustment as in the fifth prior art is not required, and the configuration of the measurement apparatus 21 for realizing the semiconductor laser element measurement method is simplified.

  Further, according to the present embodiment, the semiconductor laser element 22 is held by the measurement holding base 46. At this time, the common electrode 25 of the semiconductor laser element 22 and the measurement holding base 46 are in contact with each other. In such a state, the first measurement position 98 at which the measurement collet 58 can come into contact with one individual electrode 28a of the semiconductor laser element 22 and the measurement collet 58 at which the other individual electrode 28b of the semiconductor laser element 22 can come into contact. The measurement holding base 46 is moved by the measurement moving means 47 across the two measurement positions 99, and the measurement collet 58 is individually brought into surface contact with the individual electrodes 28a, 28b of the semiconductor laser element 22 individually. The measuring means 35 can energize each element part 24a, 24b via the measurement holding base 46 and the measurement collet 58, and can measure the electrical characteristics for each element part 24a, 24b. As a result, the electrical characteristics of the element portions 24a and 24b can be easily measured.

  Since the measurement collet 58 is in surface contact with the individual electrodes, the pressing force that the measurement collet 58 applies to the individual electrodes and the element portions is dispersed. This prevents a problem that a large force is locally applied to the individual electrode and the element part to cause distortion in the element part, and prevents a problem that the electrical characteristics of the element part changes. It is. Therefore, the original electrical characteristics of the element portion can be accurately measured, and the reliability of the semiconductor laser element 22 can be prevented from being lowered. In addition, since the measurement collet 58 is in surface contact with the individual electrode perpendicularly, when the measurement collet 58 is in surface contact with the individual electrode, the measurement collet 58 places the semiconductor laser element 22 against the measurement holding base 46. Therefore, there will be no inconvenience of displacement. Therefore, the configuration for precise position adjustment and load adjustment as in the fifth prior art becomes unnecessary, and the configuration of the apparatus is simplified.

  Further, according to the present embodiment, the supply collet 57 and the measurement collet 58 are provided on the same moving body 56, and the moving body 56 is slid in the X direction, so that the transport mechanism is uniaxial, The configuration of the measuring device 21 is simplified.

  Further, according to the present embodiment, the measurement holding base 46 is moved in order to measure the electrical characteristics of the element portions 24a and 24b of the semiconductor laser element 22, so that the supply collet 57 and the measurement collet 58 are provided. Even if the same moving body 56 is provided, the measurement operation and the supply operation can be performed simultaneously, and the time required for these operations can be shortened.

  Further, according to the present embodiment, the relative movement amount of the measurement holding base 46 and the measurement collet 58 by the measurement moving means 47 can be set for each element portion 24a, 24b. Regardless of the size of the element 22 and the outer shape and outer dimensions of the measuring collet 58, the measuring collet 58 is brought into surface contact with each individual electrode 28a, 28b of the semiconductor laser element 22, and each element portion 24a, 24b is contacted. Electrical characteristics can be measured.

  Further, according to the present embodiment, the first image recognition means 36 recognizes the positions of the individual electrodes 28 a and 28 b of the semiconductor laser element 22 held by the measurement holding base 46 and the inclination of the semiconductor laser element 22. be able to. Based on the recognition by the first image recognition means 36, the arrangement state of the semiconductor laser elements 22 can be corrected.

  Further, according to the present embodiment, the measurement moving unit 47 includes the θ moving mechanism and the XY moving mechanism, and the inclination of the semiconductor laser element 22 is determined based on the data obtained by the first image recognizing unit 36. The position can be corrected by the moving mechanism, and the position of the semiconductor laser element 22 can be corrected by the XY moving mechanism.

  Further, according to the present embodiment, the first image recognition means 36 recognizes the position and inclination of the semiconductor laser element 22 based on the outer shape of the semiconductor laser element 22 in plan view. In this case, in order to eliminate the image of the measurement holding base 46 from the imaging range of the first camera 86 of the first image recognition means 36 and reduce the data amount of the image recognition processing as much as possible, a part of the semiconductor laser element 22 is used. The measurement holding base 46 is made smaller than the outer circumference of the semiconductor laser element 22 so that it protrudes from the measurement holding base 46 or is hidden from the semiconductor laser element 22 in plan view. Thereby, it is possible to prevent the image of the measurement holding base 46 from entering the recognition region of the outer shape of the semiconductor laser element 22, and to recognize the outer shape when the semiconductor laser element 22 is viewed in plan, that is, the outer peripheral shape with high accuracy, The position and inclination of the semiconductor laser element 22 can be recognized with high accuracy.

  Further, according to the present embodiment, the measurement collet 58 can adsorb the semiconductor laser element 22 and is used when the semiconductor laser element 22 is transported. Therefore, the transport member for transporting the semiconductor laser element 22 is used. Compared with the case where the measuring collet 58 and the measuring collet 58 have different configurations, the moving distance and moving time of the conveying member and the measuring collet 58 can be shortened. In addition, the mechanism of the apparatus can be simplified.

  In addition, according to the present embodiment, since the measurement conditions can be set for each of the element portions 24a and 24b, even if the electrical characteristics of the element portions 24a and 24b are different, the element portions 24a and 24b. Can be measured under desired measurement conditions.

  FIG. 18 is a front view showing the configuration of the conveying means 105 provided in the semiconductor laser element measuring apparatus according to another embodiment of the present invention. Since the semiconductor laser element measuring apparatus of the present embodiment is similar to the semiconductor laser element measuring apparatus 21 of the above-described embodiment, the description of the same parts is omitted.

  The conveying means 105 includes first and second moving bodies 106 and 107, a first collet 108, a second collet 109 as a contact, first and second displacement driving means 110 and 111, first and first 2 lift driving means 112 and 113. The first and second moving bodies 106 and 107 are provided above the stages 31 to 33 so as to be slidable in the X direction. The first moving body 106 is provided with a first collet 108, and the second moving body 107 is provided with a second collet 109.

  The first collet 108 has the same configuration as the supply collet 57 in the above-described embodiment, and the second collet 109 has the same configuration as the measurement collet 58 in the above-described embodiment. The first displacement driving means 110 moves the first moving body 106 and thus the first collet 108 provided on the first moving body 106 in the X direction. The second displacement driving means 111 moves the second moving body 107 and thus the second collet 109 provided on the second moving body 107 in the X direction. The first raising / lowering driving means 112 raises and lowers the first collet 108 along the axis 114 of the first collet 108. That is, the first lifting / lowering driving means 112 moves the first collet 108 in the Z direction. The second raising / lowering driving means 113 raises and lowers the second collet 109 along the axis 115 of the second collet 109. That is, the second lifting / lowering driving means 113 moves the second collet 109 in the Z direction.

  In the present embodiment, a mechanism for transporting the semiconductor laser element 22 from the supply mounting base 41 to the measurement holding base 46 and a mechanism for transporting the semiconductor laser element 22 from the measurement holding base 46 to the storage mounting base 51. Since these mechanisms are individually provided, the transport mechanism has two axes and the configuration of the measuring apparatus is complicated, but the same effects as those of the above-described embodiment can be achieved.

  FIG. 19 is a front view showing a configuration of a conveying means 117 provided in a semiconductor laser element measuring apparatus according to still another embodiment of the present invention. Since the semiconductor laser element measuring apparatus of the present embodiment is similar to the semiconductor laser element measuring apparatus 21 of each of the foregoing embodiments, the description of the same parts is omitted.

  The conveying means 117 includes a third moving body 118, a third collet 119 that is a contact, a third displacement driving means 120, and a third lifting / lowering driving means 121. The third moving body 118 is provided above the stages 31 to 33 so as to be slidable in the X direction. The third moving body 118 is provided with a third collet 119.

  The third collet 119 has the same configuration as the measurement collet 58 in the above-described embodiment. The third displacement driving means 59 moves the third moving body 118, and hence the third collet 119 provided on the third moving body 118, in the X direction. The third raising / lowering driving means 121 raises and lowers the third collet 119 along the axis 122 of the third collet 119. That is, the 3rd raising / lowering drive means 121 moves the 3rd collet 119 to a Z direction.

  In the present embodiment, the semiconductor laser device 22 is transported from the supply mounting table 41 to the measurement holding table 46 and the semiconductor laser device 22 is transported from the measurement holding table 46 to the storage mounting table 51. To do. Therefore, the measurement cycle time is longer than in the above-described embodiments, but the transport mechanism is uniaxial and the configuration of the measurement apparatus is simplified.

  In each of the above-described embodiments, the measurement holding base 46 is moved to measure the electrical characteristics of the element portions 24a and 24b of the semiconductor laser element 22, but the measurement collet 58 may be moved. Both the measurement collet 58 and the measurement holding base 46 may be moved.

It is a front view which simplifies and shows the structure of the measuring apparatus 21 of the semiconductor laser element which is one Embodiment of this invention. 3 is a plan view of a semiconductor laser element 22. FIG. FIG. 3 is a front view of the semiconductor laser element 22 as viewed from below in FIG. 2. 4 is a front view showing first image recognition means 36. FIG. 4 is a plan view showing an arrangement state of the semiconductor laser elements 22 held by a measurement holding base 46. FIG. It is a figure which shows the part of the semiconductor laser element 22 recognized in order to produce | generate 1st data. FIG. 3 is a diagram showing a positional relationship between a semiconductor laser element 22 and a measurement collet 58. It is a circuit diagram when measuring the electrical property of one element part 24a. FIG. 4 is a diagram showing a positional relationship between the observation means 38 and the semiconductor laser element 22. It is a figure which shows the contact state observed by the observation means. 3 is a block diagram showing an electrical configuration of a measuring device 21. FIG. 12 is a flowchart for explaining the operation of the control means 90 shown in FIG. 13 is a flowchart for explaining the operation of the control means 90 following FIG. It is a flowchart for demonstrating the operation | movement following FIG. 13 of the control means 90. FIG. It is a figure for demonstrating supply operation | movement of the measuring apparatus. FIG. 6 is a diagram for explaining a measurement operation of the measurement device 21. FIG. 6 is a diagram for explaining a storing operation of the measuring device 21. It is a front view which shows the structure of the conveyance means 105 with which the measuring apparatus of the semiconductor laser element which is other form of implementation of this invention is equipped. It is a front view which shows the structure of the conveyance means 117 with which the measuring apparatus of the semiconductor laser element which is further another form of implementation of this invention is equipped. It is a figure for demonstrating the measuring method and measuring apparatus of a semiconductor laser element of the 1st prior art.

1 is a plan view of a semiconductor laser element 1. FIG. FIG. 22 is a front view of the semiconductor laser element 1 as viewed from below in FIG. 21. FIG. 3 is a circuit diagram when measuring electrical characteristics of the semiconductor laser element 1. It is a figure for demonstrating the measuring method and measuring apparatus of a semiconductor laser element of the 2nd prior art. It is a figure for demonstrating the measuring method and measuring apparatus of a semiconductor laser element of the 5th prior art.

Explanation of symbols

DESCRIPTION OF SYMBOLS 21 Semiconductor laser element measuring apparatus 22 Semiconductor laser element 23 Substrate 24a, 24b Element part 25 Common electrode 26a, 26b Light emission area | region 27a, 27b Laser beam emission end part 28a, 28b Individual electrode 31 Supply stage 32 Measurement stage 33 Storage Stages 34, 105, 117 Conveying means 35 Measuring means 36 First image recognizing means 37 Second image recognizing means 38 Observation means 41 Supplying table 42 Supplying moving means 46 Measuring holding table 47 Measuring moving means 51 Storage table 51 Table 52 Storage platform 56 Moving body 57 Supply collet 58 Measurement collet 59 Displacement drive means 60 Supply lift drive means 61 Measurement lift drive means 106 First moving body 107 Second moving body 108 First collet 109 Second Collet 110 First displacement driving means 111 Second displacement Driving means 112 First raising / lowering driving means 113 Second raising / lowering driving means 118 Third moving body 119 Third collet 120 Third displacement driving means 121 Third raising / lowering driving means

Claims (9)

Including a substrate and two element portions provided on one surface of the substrate. Each element portion has a laser beam emitting end portion for emitting laser light, and a common electrode is formed on the other surface of the substrate. A measuring method for measuring the electrical characteristics of the semiconductor laser element on which the individual electrodes are respectively formed on one surface of each element portion facing away from the common electrode ,
A holder having a large storage surface than the outer shape of the semiconductor laser device when viewed from the thickness direction, in a state where said common electrode and the holder of the holding surface is in contact, the placing the semiconductor laser element 1 Process ,
A second step of imaging the semiconductor laser element mounted on the holding table, recognizing the position and inclination of the semiconductor laser element, and generating data relating to the arrangement state of the semiconductor laser element;
A third step of correcting the position and tilt of the semiconductor laser element so as to be in a predetermined arrangement state based on the generated data;
The holder and the contact are moved relative to each other, and the contacts are individually brought into surface contact with each individual electrode vertically, and each element portion is energized through the holder and the contact. And a fourth step of measuring electrical characteristics for each element portion ,
In the first step, the semiconductor laser element is placed on the holding surface by protruding a part of the semiconductor laser element from the holding surface so that the image of the holding surface does not enter the imaging region.
In the second step, the position and inclination of the semiconductor laser element are recognized from the outer shape of the semiconductor laser element at a portion protruding from the holding surface . Including a substrate and two element portions provided on one surface of the substrate. Each element portion has a laser beam emitting end portion for emitting laser light, and a common electrode is formed on the other surface of the substrate. A measuring device for measuring electrical characteristics of a semiconductor laser element on which individual electrodes are respectively formed on one surface of each element portion facing away from the common electrode ,
A holding table having a holding surface larger than the outer shape of the semiconductor laser element when viewed from the thickness direction, and holding the semiconductor laser element in a state in which the common electrode is in contact with the holding surface ;
A contact that makes vertical surface contact with each individual electrode of the semiconductor laser element held by the holding table;
Over a first measurement position where the contact can come into contact with one individual electrode of the semiconductor laser element held by the holding table, and a second measurement position where the contact can come into contact with the other individual electrode of the semiconductor laser element, Moving means for relatively moving the holding table and the contact and correcting the position and inclination of the semiconductor laser element held by the holding table ;
A means for energizing the semiconductor laser element through a holding base and a contact, and measuring the electrical characteristics of the semiconductor laser element ;
Image recognition means for imaging the semiconductor laser element held by the holding table, recognizing the position and inclination of the semiconductor laser element, and generating data relating to the arrangement state of the semiconductor laser element;
Control means for controlling the moving means so that the semiconductor laser element held by the holding base is in a predetermined arrangement state based on the data generated by the image recognition means,
The semiconductor laser element is placed on the holding surface by protruding a part of the semiconductor laser element so that the image of the holding surface does not enter the imaging region of the image recognition means, and the image recognition means The apparatus for measuring a semiconductor laser element, wherein the position and inclination of the semiconductor laser element are recognized by the outer shape of the semiconductor laser element at a portion protruding from the holding surface .   3. The semiconductor laser device measuring apparatus according to claim 2, wherein a relative movement amount of the holding table and the contact by the moving means can be set for each element portion. The moving means has a θ moving mechanism for correcting the tilt of the semiconductor laser element and an XY moving mechanism for correcting the position of the semiconductor laser element based on the data generated by the image recognition means. Item 3. A semiconductor laser device measuring apparatus according to Item 2 .   3. The semiconductor laser device measuring apparatus according to claim 2, further comprising observation means capable of observing a contact state between the semiconductor laser device held by the holding table and the contact.   3. The semiconductor laser device measuring apparatus according to claim 2, wherein the contact can adsorb the semiconductor laser device and is used when the semiconductor laser device is transported.   3. The apparatus for measuring a semiconductor laser element according to claim 2, wherein measurement conditions can be set for each element part. 3. The measurement of a semiconductor laser element according to claim 2, wherein if it is determined that the electric characteristic of one element part is defective, whether or not the electric characteristic of the other element part is measured can be specified. apparatus.   3. The semiconductor laser device measuring apparatus according to claim 2, wherein the moving means is switchable between a state in which the holding table is moved and a state in which the holding table is not moved.

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