JP4558886B2 - Probe manufacturing method and probe array manufacturing method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a probe, a probe manufacturing method, a probe array, and a probe array manufacturing method suitable for use in condensing incident light and irradiating light, for example, on a sample to be measured and a recording medium. The incident light can be collected to generate near-field light and propagating light. Probe manufacturing method and The present invention relates to a method for manufacturing a probe array.
[0002]
[Prior art]
Conventionally, in order to fabricate a plurality of protruding probes provided in, for example, a near-field optical microscope and a near-field optical recording optical head, a fabrication method by transferring a plurality of recess arrays has been proposed so far.
[0003]
In the near-field optical microscope and the near-field optical recording optical head, the protruding probe array is arranged so that the distance between each protruding portion and the sample is smaller than the wavelength of light used when measuring the sample. . As a result, the near-field optical microscope often measures the physical properties of the sample by generating near-field light between each protrusion and the sample.
[0004]
When manufacturing the protruding probe array, first, for example, by performing anisotropic etching on a Si substrate having a (100) plane orientation, a concave array comprising a plurality of concave portions is produced on the Si substrate. Next, the recess is transferred to another material (for example, a metal material or a dielectric material) using the manufactured recess array. At this time, the surface of the concave array is covered with another material different from Si such as metal or dielectric, and then the Si substrate is removed from the other material. Thus, a protruding probe array having a plurality of protruding portions made of a metal material or a dielectric material is manufactured.
[0005]
[Problems to be solved by the invention]
Since the protruding probe array provided in the above-mentioned near-field optical microscope is used in close proximity to each protrusion and the sample at a distance less than the wavelength of light, it is important to control the height of each protrusion. Become.
[0006]
Here, as described above, when a protrusion type probe array is manufactured by transferring a metal material or the like using a recess array, the height H of each protrusion is set as shown in FIG. It is determined by the depth of 1001. The depth of each recess 1001 is determined by the width W = 2H / tan 54.74 ° ≈1.414H of the recess 1001 when the recess 1001 is surrounded by the Si (111) surface.
[0007]
However, even if an electron beam exposure apparatus is used for the width of the concave portion 1001, an error of about 10 nm occurs in each concave portion 1001 because fluctuation occurs in mechanical accuracy. Therefore, it is impossible to make the heights of the protrusions of the protrusion-type probe array manufactured using the recess array 1000 uniform.
[0008]
Further, when a single protrusion-type probe is manufactured instead of the probe array, since a single protrusion is manufactured, it is not considered to make the heights of the plurality of protrusions uniform. However, there are the following problems.
[0009]
First, the tip of each protrusion is not completely sharpened. Actually, the tip of the protrusion is finished to a flat surface, and the protrusion has a frustum shape. When a frustum-shaped protrusion is manufactured by the conventional technique, first, a frustum-shaped recess 2001 is manufactured as shown in FIG. This is transferred to produce a protrusion, and the flatness of the protrusion tip at this time is reflected in the flatness of the recess. When manufacturing the recess 2001 having the bottom surface 2002, the anisotropic etching time is controlled to stop the etching before all the surfaces constituting the recess 2001 become the (111) plane (the bottom surface disappears). Make it. In this case, the flatness of the bottom surface 2002 is often very poor due to the occurrence of hillocks and the like.
[0010]
For example, if the wavelength of the emitted light is λ, the tip of the protruding probe needs to have a flatness of λ / 8 or less. Absent. Therefore, the protruding probe cannot be produced by the conventional technique.
[0011]
Next, as shown in FIG. 30B, an etch stop layer 2003 may be formed in advance on the bottom surface 2002 of the recess 2001, and the bottom surface 2002 may be manufactured without time management. In this case, since sufficient flatness of the etch stop layer 2003 can be obtained, it is possible to produce a protrusion that satisfies the requirement in terms of flatness.
[0012]
However, in this case, the opening diameter D of the projection produced is determined from the opening width W of the recess 2001 and the depth H of the recess 2001, and the depth H is sufficiently accurate as described above in terms of local flatness. However, the fluctuation within one wafer or between wafers is often as large as several hundred nm.
[0013]
Therefore, when the recess 2001 is formed with a constant opening width W, the diameter of the bottom surface 2002 (that is, the opening diameter D at the tip of the protrusion) varies according to the fluctuation of the depth H.
[0014]
In order to cope with this, it is possible to change the opening width W according to the fluctuation of the depth H, but it is impossible to accurately measure the depth H. In practice, it is impossible to change the dimensions of the photomask.
[0015]
As described above, the conventional technique has a large problem in dimensional accuracy even when a single protrusion-type probe that does not need to consider the uniform height of the plurality of protrusions is produced.
[0016]
Therefore, the present invention has been proposed in view of the above-described circumstances, and has greatly improved dimensional accuracy. Probe manufacturing method and probe array It aims at providing the manufacturing method of.
[0017]
Another object of the present invention is to provide a probe array with high efficiency and high resolution, in which the height of each projection provided on the probe array is controlled to be constant.
[0018]
Another object of the present invention is to control the height of each protrusion with a high efficiency and a high resolution when manufacturing a probe array.
[0020]
[Means for Solving the Problems]
In order to solve the above-described problems, a probe manufacturing method according to the present invention includes a first substrate having light transparency, a high refractive index layer having a higher refractive index than the first substrate, and the high refractive index. A second substrate comprising an intermediate layer laminated on the layer and a support layer laminated on the intermediate layer, the first substrate and the high refractive index layer being brought into contact with each other, and the second substrate The support layer contained in the substrate is removed, the intermediate layer exposed by removing the support layer is patterned, and the high refractive index layer exposed by patterning is etched to form cone-shaped protrusions on the first substrate. And a patterned intermediate layer is removed to produce a probe having a cone-shaped projection made of a high refractive index layer on the first substrate.
[0021]
In order to solve the above-described problem, another probe manufacturing method according to the present invention includes a light-transmitting first substrate, a support layer, an intermediate layer formed on the support layer, and the intermediate layer. Formed into Refractive index higher than the first substrate A second substrate made of a GaP layer is joined by bringing the first substrate and the GaP layer into contact with each other, and the support layer included in the second substrate is removed, and the support layer is removed and exposed. The intermediate layer is patterned, the GaP layer exposed by patterning is etched to form a cone-shaped protrusion on the first substrate, the patterned intermediate layer is removed, and the first substrate is removed. above Higher refractive index than the first substrate A method for producing a probe, comprising producing a probe having a conical protrusion formed of a GaP layer.
[0022]
In order to solve the above-described problem, another probe manufacturing method according to the present invention includes a light-transmitting first substrate and a predetermined amount of impurities having a higher refractive index than that of the first substrate. A second substrate composed of a low concentration layer and a high concentration layer mixed with an impurity larger than the predetermined amount of impurities is joined by bringing the first substrate and the low concentration layer into contact with each other. The high concentration layer contained in the substrate is removed, a patterning material is formed on the surface of the low concentration layer exposed by removing the high concentration layer, the patterning material is patterned, and the patterning material is exposed. The concentration layer is etched to form a cone-shaped protrusion on the first substrate, the patterned patterning material is removed, and a cone-shaped protrusion made of a low concentration layer is formed on the first substrate. A probe is prepared.
[0023]
In order to solve the above-described problem, another probe manufacturing method to which the present invention is applied includes a first substrate having optical transparency, an n-type Si layer having a refractive index higher than that of the first substrate, and p. A second substrate made of a Si-type layer is bonded to the first substrate and the n-type Si layer in contact with each other, the p-type Si layer contained in the second substrate is removed, and the p-type is removed. A patterning material is formed on the surface of the n-type Si layer exposed by removing the Si layer, the patterning material is patterned, and the n-type Si layer exposed by patterning is etched to form a pattern on the first substrate. A probe having a cone-shaped projection made of an n-type Si layer on the first substrate is manufactured by forming a cone-shaped projection on the first substrate and removing the patterned patterning material.
[0024]
In order to solve the above-described problem, another probe manufacturing method according to the present invention includes a first substrate having light transparency, a high-concentration p-type Si layer having a refractive index higher than that of the first substrate, bonding a second substrate made of an n-type Si layer by bringing the first substrate and the high-concentration p-type Si layer into contact with each other, and removing the n-type Si layer contained in the second substrate; A patterning material is formed on the surface of the high-concentration p-type Si layer exposed by removing the n-type Si layer, the patterning material is patterned, and the high-concentration p-type Si layer exposed by patterning is etched. Then, a conical protrusion is formed on the first substrate, the patterned patterning material is removed, and the conical protrusion formed of the high-concentration p-type Si layer is formed on the first substrate. A probe is prepared.
[0026]
In order to solve the above-described problems, a method for manufacturing a probe array according to the present invention includes a first substrate having light transmittance, a high refractive index layer having a higher refractive index than the first substrate, and the high refractive index. An intermediate layer laminated on the refractive index layer and a second substrate composed of the support layer laminated on the intermediate layer, the first substrate and the high refractive index layer are brought into contact and joined, The support layer included in the substrate 2 is removed, the support layer is removed, the intermediate layer exposed is patterned, and the high refractive index layer exposed by patterning is etched to form a conical shape on the first substrate. A plurality of protrusions are formed, and the patterned intermediate layer is removed to produce a probe array including a plurality of conical protrusions made of a high refractive index layer on the first substrate.
[0027]
In order to solve the above-described problem, another probe array manufacturing method according to the present invention includes a first substrate having optical transparency, a support layer, an intermediate layer formed on the support layer, and the intermediate layer. Formed on Refractive index higher than the first substrate A second substrate made of a GaP layer is joined by bringing the first substrate and the GaP layer into contact with each other, and the support layer included in the second substrate is removed, and the support layer is removed and exposed. Patterning the intermediate layer, etching the patterned GaP layer to form a plurality of conical protrusions on the first substrate, removing the patterned intermediate layer, On the board Higher refractive index than the first substrate A probe array having a plurality of conical protrusions made of a GaP layer is produced.
[0028]
In another probe array manufacturing method according to the present invention, in order to solve the above-described problem, a first substrate having light transmittance and a predetermined amount of impurities having a refractive index higher than that of the first substrate are mixed. And bonding the first substrate and the low-concentration layer in contact with the second substrate composed of the low-concentration layer and the high-concentration layer mixed with impurities greater than the predetermined amount of impurities. The high-concentration layer contained in the substrate is removed, the patterning material is formed on the surface of the low-concentration layer exposed by removing the high-concentration layer, the patterning material is patterned, and the patterning material is exposed The low-concentration layer is etched to form a plurality of conical projections on the first substrate, the patterned patterning material is removed, and the conical projections made of the low-concentration layer on the first substrate Array with multiple parts To produce.
[0029]
Another probe array manufacturing method according to the present invention includes a first substrate having optical transparency, an n-type Si layer having a refractive index higher than that of the first substrate, and p. A second substrate made of a Si-type layer is bonded to the first substrate and the n-type Si layer in contact with each other, the p-type Si layer contained in the second substrate is removed, and the p-type is removed. A patterning material is formed on the surface of the n-type Si layer exposed by removing the Si layer, the patterning material is patterned, and the n-type Si layer exposed by patterning is etched to form a pattern on the first substrate. A plurality of cone-shaped projections are formed on the substrate, and the patterned patterning material is removed to produce a probe array having a plurality of cone-shaped projections made of an n-type Si layer on the first substrate.
[0030]
Another probe array manufacturing method according to the present invention includes a first substrate having optical transparency and a high-concentration p-type Si layer having a refractive index higher than that of the first substrate in order to solve the above-described problem. And a second substrate made of an n-type Si layer are bonded to each other by bringing the first substrate and the high-concentration p-type Si layer into contact with each other, and the n-type Si layer contained in the second substrate is removed. The patterning material is formed on the surface of the high-concentration p-type Si layer exposed by removing the n-type Si layer, the patterning material is patterned, and the high-concentration p-type Si layer exposed by patterning is formed. Etching to form a plurality of conical protrusions on the first substrate, removing the patterned material for patterning, and forming the conical protrusions made of the high-concentration p-type Si layer on the first substrate A probe array having a plurality of parts is prepared.
[0031]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
[0032]
The present invention is applied to a probe array 1 having a single probe that collects incident light, for example, a plurality of single probes as shown in FIG.
[0033]
The probe array 1 is used as an optical head of a near-field optical microscope or an optical head for irradiating a recording medium with near-field light. For example, when the probe array 1 is used as an optical head of a near-field optical microscope, the probe array 1 is disposed at a position where the distance from the sample to be measured is equal to or less than the wavelength of the light irradiated to the sample to be measured. In such a state, the probe array 1 generates near-field light with the sample to be measured.
[0034]
The probe array 1 is configured as shown in FIG. As shown in FIG. 1B, the probe array 1 includes a glass substrate 2, a plurality of Si protrusions 3 formed on the glass substrate 2, and a bank part 4 provided around the Si protrusions 3. And a metal layer 5 formed on the Si protrusion 3 and the bank 4. In the probe array 1, the glass substrate 2, the Si protrusion 3 and the bank 4 are connected using a technique such as anodic bonding. The anodic bonding will be described in detail in the description of the method for manufacturing the probe array 1. In the present embodiment, the Si protrusions 3 constituting the probe array 1 correspond to the single probe.
[0035]
As shown in FIG. 1A, the glass substrate 2 has, for example, a vertical dimension t. ₁ Is about 3mm, horizontal dimension t ₂ Is about 4 mm and the thickness dimension t as shown in FIG. _Three Is formed to about 1 mm.
[0036]
The Si protrusion 3 is made of a high refractive index material having a refractive index much higher than that of the glass substrate 2. In this embodiment, it consists of Si material, for example. As shown in FIG. 1A, the Si protrusions 3 are surrounded by the bank 4 and are arranged in two dimensions in the vertical and horizontal directions. Each Si protrusion 3 is formed on the glass substrate 2 in a quadrangular pyramid shape with the bottom surface formed on the glass substrate 2 side. As shown in FIG. 1B, each Si protrusion 3 has a height dimension t. _Four Is formed with a thickness of about 5 to 10 μm.
[0037]
Each Si protrusion 3 has a length t on one side of the bottom surface as shown in FIG. ₇ About 10μm, height dimension t _Four Is approximately 10 μm, the angle θ formed by the tip portion (vertex) is approximately 90 degrees. The side surface of the Si protrusion 3 is designed so that the light intensity increases at the tip when light is incident from the bottom side of the quadrangular pyramid.
[0038]
Further, as will be described later, the Si protrusion 3 has a height dimension t when the side surface is changed in two stages. _Four Is about 3 μm, the length of one side of the bottom surface is about 2 μm, and the angle formed by the tip portion (vertex) is about 30 degrees. The Si protrusion 3 is designed to generate near-field light at the tip portion by forming the tip portion with an opening diameter of about 100 nm, and the tip portion has an opening diameter of about the wavelength of the light. Thus, it is designed to generate propagating light that is not near-field light at the tip portion.
[0039]
The bank part 4 is made of a Si material like the Si protrusion part 3. This bank part 4 has a vertical dimension t. _Five And lateral dimension t ₆ Is formed in a square shape of about 100 μm, and the height dimension is 5 to 10 μm, similar to the Si protrusion 3.
[0040]
The bank portions 4 are arranged on the two in a two-dimensional arrangement in the vertical direction and the horizontal direction. By arranging the bank parts 4 in the two-dimensional direction, the Si protrusions 3 are arranged on the glass substrate 2 in the two-dimensional direction.
[0041]
The metal layer 5 is made of a light-shielding material such as Al, and is formed to a thickness that does not transmit light by a thin film formation technique such as vapor deposition. For example, when an Al material is used, the metal film 5 is formed with a film thickness of about 30 nm. The metal layer 5 is formed on the side surfaces of the glass substrate 2 and the Si protrusion 3.
[0042]
Such a probe array 1 is provided in the near-field optical microscope, and is disposed at a position where the distance from the sample is not more than the wavelength of light. When light is incident from the glass substrate 2 side, the probe array 1 scatters the light by the metal layer 5 and condenses the light so that the light intensity at the apex of the Si protrusion 3 is increased. A near-field light is generated between 3 and the sample.
[0043]
Next, a method for manufacturing the probe array 1 will be described. The manufacturing method of the probe array 1 described below can also be applied when manufacturing a single probe, that is, a single Si protrusion 3.
[0044]
When manufacturing the probe array 1, first, an SOI (Silicon On Insulator) substrate 10 is prepared as shown in FIG. This SOI substrate 10 includes an active layer 11 made of Si and SiO that is an intermediate layer formed on the active layer 11. ₂ Layer 12 and SiO ₂ And a Si support substrate 13 formed on the layer 12. Here, the active layer 11 has a film thickness of about 10 μm and a refractive index of about 4 for light having a wavelength of about 800 nm. Here, the active layer 11 is required to have a uniform surface on the surface on which the Si protrusion 3 and the bank 4 are formed.
[0045]
Next, as shown in FIG. 4, the SOI substrate 10 and the glass substrate 14 are anodically bonded. As the glass substrate 14, Corning # 7740 or # 7070 or Iwaki Glass SW-3 or the like is used. Here, the glass substrate 14 is Na. ⁺ Contains ions. Then, the active layer 11 of the SOI substrate 10 and the glass substrate 14 are brought into contact with each other in a vacuum or N ₂ , Ar ₂ A potential difference of 200 V to 1000 V is applied between the Si support substrate 13 and the glass substrate 14 with the Si support substrate 13 side as an anode while being heated to 350 ° C. to 450 ° C. in an inert gas such as. Positive Na even at temperatures below the melting point of the glass substrate 14 ⁺ Since ions easily move in the glass substrate 14, they are attracted by a negative electric field and reach the surface of the glass substrate 14. A large amount of negative ions remaining in the glass substrate 14 forms a space charge layer on the bonding surface with the active layer 11 (Si), and generates an attractive force between the Si-glass to cause chemical bonding.
[0046]
Next, the Si support substrate 13 is removed from the SOI substrate 10 by etching with a KOH aqueous solution, tetramethylammonium hydroxide (TMAH), a mixed solution of hydrofluoric acid or nitric acid, or mechanical polishing or chemical mechanical polishing (CMP). To do. As a result, SiO ₂ The surface of the layer 12 will be exposed.
[0047]
Next, as shown in FIG. 5, the SiO exposed by removing the Si support substrate 13. ₂ The surface of the layer 12 is patterned by lithography. When patterning, for example, as shown in FIG. 1, the SiO protrusions 3 and the tip portions of the bank portions 4 are disposed at positions where the SiO protrusions 3 and the bank portions 4 are disposed. ₂ Perform to leave layer 12. As a result, SiO ₂ A pattern composed of the layer 12 is formed on the active layer 11. Here, as a pattern corresponding to each tip portion for forming each Si protrusion 3, a square shape having a side of about 10 to 15 μm or a round shape having an equivalent size can be used.
[0048]
Next, as shown in FIG. ₂ The surface on which the pattern of the layer 12 is formed is anisotropic by using an etchant such as a KOH aqueous solution, NaOH aqueous solution, hydrazine hydrate, etylene diamine-pyrocatechol-water mixture (EPW), or TMAH. Etching is performed. As a result, SiO ₂ Anisotropic etching is performed only on the portion of the layer 12 where the pattern is not formed.
[0049]
For example, when a solution in which isopropyl alcohol (IPA) is mixed with a KOH solution (34 wt%, 80 ° C.) is used as an etching solution, the probe array 1 in which the slope of the side surface of the active layer 11 is one step can be manufactured. At this time, each SiO ₂ The pattern formed by the layer 12 does not change even if it is round or square.
[0050]
More specifically, SiO ₂ When the layer 12 has a 10 μm square shape, KOH (40 g, 85%), water (60 g), and IPA (40 cc) are mixed as an etchant and etched at 80 ° C., 180 seconds, 360 seconds, 540 seconds, and 750 seconds from the start. Changes in the active layer 11 when time etching is performed are as shown in FIGS. 7A, 7B, 7C, and 7D, respectively. As a result, as shown in FIG. 6, the active layer 11 a that becomes the quadrangular pyramidal Si protrusion 3 is formed, and the active layer 11 b that becomes the bank 4 is formed on the glass substrate 14.
[0051]
Next, as shown in FIG. 8, SiO remaining on the active layer 11a and the active layer 11b. ₂ The layer 12 is removed, and a metal layer 15 is formed on the side surfaces of the active layer 11a and the active layer 11b and on the glass substrate 14 where the active layer 11a and the active layer 11b are not left.
[0052]
Further, as shown in FIG. 9, a light shielding film made of the metal layer 15 is formed only on the active layer forming surface of the active layer 11b and the glass substrate 14, or only on the active layer 11b. In the probe array 1 manufactured in this way, light other than the light generated from the tip of the Si protrusion 3 can be blocked, and the S / N of the read signal can be improved.
[0053]
Here, the thickness of the metal layer 15 is about 30 to 50 nm when Al is used as the material, and is about 100 nm when Au is used as the material. That is, the metal layer 15 is formed to have a thickness of about a skin depth that can enter the Si protrusion 3 from the glass substrate 2 and generate light.
[0054]
Therefore, by performing the steps described with reference to FIGS. 4 to 8 and FIG. 9, the probe array 1 having a plurality of Si protrusions 3 on the glass substrate 2 or a single Si protrusion as shown in FIG. A single probe consisting of part 3 can be manufactured.
[0055]
According to this probe array 1, the active layer 11 made of Si is bonded and transferred to the glass substrate 14, so that the height of the tip of each Si protrusion 3 is made uniform, and the flatness of the tip of the Si protrusion 3 is increased. As a result, near-field light and propagating light generated at the tip can be emitted with high efficiency and high resolution, and the aperture diameter can be easily controlled.
[0056]
Further, when a single protrusion type probe is manufactured instead of the probe array, the flatness of the tip surface of the frustum-shaped protrusion type probe can be made extremely high, such as λ / 8 or less. Further, the opening diameter D at the tip of the protrusion can be easily controlled by the etching time for forming the protrusion.
[0057]
Since such a probe array 1 can be manufactured using the SOI substrate 10, the height error of the tip portion of each Si protrusion 3 is determined by the film thickness accuracy of the SOI substrate 10. Here, since the film thickness accuracy of the SOI substrate 10 manufactured by the crystal growth technique has only an error of about the atomic level, the height error of the tip portion of each Si protrusion 3 is estimated to be about the atomic level. Therefore, according to the manufacturing method of the probe array 1, even when compared with the manufacturing technology using the conventional transfer, the height can be controlled with high accuracy, and the tip position is uniformly controlled. Part 3 can be manufactured.
[0058]
Furthermore, according to this probe array 1, since the height of each Si protrusion 3 is constant, when recording / reproducing is performed on the recording medium, the distance between the recording medium and the tip of each Si protrusion 3 is set to The Si protrusions 3 can be constant, and all the Si protrusions 3 can be at positions necessary for generating near-field light. That is, according to the probe array 1, near-field light is not generated or generated for each Si protrusion 3.
[0059]
In addition, since the probe array 1 is manufactured by anodically bonding the SOI substrate 10 and the glass substrate 14, the strength is improved as compared with the case where the probe array 1 is manufactured using only the SOI substrate 10.
[0060]
Further, for example, when a substrate made of Si is used instead of the glass substrate 14, a thickness of several hundred μm is necessary to obtain sufficient mechanical strength, and therefore Si has a propagation loss with respect to visible light. It becomes impossible to make light incident on the protrusion 3. On the other hand, in the probe array 1, the Si protrusion 3 is formed on the glass substrate 14, and the height of the Si protrusion 3 is also 5 to 10 μm. Since Si having a thickness of 5 to 10 μm has a transmittance of several tens of percent at a wavelength of about 780 to 830 nm, the amount of light incident on each Si protrusion 3 is increased, and the near-field light generated at the tip portion is increased. The light intensity can be increased.
[0061]
Therefore, according to this probe array 1, since the Si protrusions 3 are made of Si and the tip positions of the Si protrusions 3 are uniform, the efficiency of the Si protrusions 3 is uniform, and it is difficult to achieve both of them so far. It can be said that it has both high efficiency and high resolution. That is, according to this probe array 1, the Si protrusion 3 is made of a high refractive index material such as Si, so that the wavelength of the propagation light in the Si protrusion 3 is effectively shortened. While suppressing the light which oozes out from 3, the light utilization efficiency can be improved and the light spot diameter can be reduced.
[0062]
In addition, since the heights of the Si protrusions 3 are uniform, the recording medium can approach each Si protrusion 3 within a range where near-field light exists at the tip. Therefore, high efficiency and high resolution of all the Si protrusions 3 can be achieved at the same time.
[0063]
Further, according to this probe array 1, since the bank portion 4 having the same height as the Si protrusion 3 and disposed at a position surrounding the periphery of the Si protrusion 3 is provided, At the time of recording / reproducing, when the Si protrusion 3 and the bank 4 are opposed to the recording medium, even when the Si protrusion 3 and the bank 4 are in contact with the recording medium, the pressure applied to the Si protrusion 3 is reduced. Damage to the protrusion 3 can be reduced.
[0064]
Further, according to this probe array 1, since the same height can be obtained by making the same material and simultaneously etching the Si protrusion 3 and the bank 4 at the time of fabrication, the Si protrusion 3 and the bank 4 are Even when the Si protrusion 3 and the bank 4 come into contact with the recording medium when facing the recording medium, the pressure applied to the Si protrusion 3 can be reduced and damage to the Si protrusion 3 can be reduced.
[0065]
Here, as described with reference to FIGS. 6 and 7, when the Si protrusion 3 and the bank 4 are manufactured by etching, the SiO as described with reference to FIG. ₂ By changing the pattern when the layer 12 is etched, the Si protrusion 3 having a plurality of inclination angles with respect to the glass substrate 14 can be formed.
[0066]
That is, when the inclination angle of the side surface of the active layer 11 is plural, SiO 2 ₂ It is desirable that the mask made of the layer 12 has a round shape. Further, an etching solution for etching is prepared as a KOH solution (34 wt%, 80 ° C.), NaOH, EPW, or TMAH.
[0067]
More specifically, SiO ₂ When the layer 12 has a 10 μm square pattern and KOH (34 wt%, 80 ° C.) is used as an etchant, the change of the active layer 11 when etching is performed for 60 sec, 150 sec, 405 sec, and 483 sec from the start. The active layer 11a is formed on the glass substrate 14 as shown in FIGS. 10 (a), 10 (b), 10 (c), and 10 (d). As a result, as shown in FIG. 10D, the outer wall of the active layer 11a can be formed into a plurality of inclined surfaces 11c and 11d having different inclination angles (taper angles).
[0068]
As described above, in the Si protrusion 3 in which the outer wall of the active layer 11a is provided with the plurality of inclined surfaces 11c and 11d, the first cone-shaped region having the inclined surface 11d has a sharpened angle and has the inclined surface 11c. The second cone-shaped region is configured to reduce the acute angle. Therefore, in the Si protrusion 3 manufactured in this manner, light loss is reduced in the first cone-shaped region to transmit light with high efficiency, and in the second cone-shaped region, the second cone-shaped portion is transmitted. Light from the region is narrowed down and a small spot of light is emitted from the tip. Therefore, according to such Si protrusion part 3, the light of high efficiency and optical resolution can be thrown away.
[0069]
In the Si protrusion 3 described above, the aperture diameter can be determined by applying a technique for optimizing the core diameter of an optical fiber probe with a sharpened optical fiber. Here, the core material of the optical fiber probe is made of a glass material having a refractive index of 1.53.
[0070]
That is, in the optimization of the optical fiber probe, an electric field distribution analysis method inside the core is used. According to this electric field distribution analysis method, it is assumed that the cladding is an ideal metal without light leakage, and the mode of light existing inside the core is TE. _1n Mode (n = 1-6) and TM _1n When only the mode (n = 1 to 6) is selected, the relationship between the core diameter as shown in FIG. 11 and the electric field strength at the center of the core is obtained. According to FIG. 11, there are a plurality of modes in the core of the optical fiber probe as shown in FIG. 11 (a), and the electric field distribution is generated by superposition of the modes as shown in FIG. 11 (b). It can be seen that it is formed.
[0071]
FIG. 11A shows the electric field strength and the equivalent refractive index in each mode when the core diameter is changed. According to FIG. 11A, the electric field strength (amplitude ratio) of each mode is maximized at the cutoff diameter indicating the core diameter where the equivalent refractive index is converged to zero.
[0072]
FIG. 11 (b) shows the sum of the electric field strength in each mode and the spot diameter at each core diameter when the core diameter is changed. However, when there are a plurality of peaks, the peak at the core center is shown. The spot diameter is shown. According to FIG. 11B, it can be seen that not only the electric field intensity has a maximum value in the cutoff diameter of each mode (FIG. 11A), but also a peak with a small spot diameter is obtained.
[0073]
At the cutoff diameter of each of these modes, TE ₁₁ In the cut-off diameter for transmitting the mode light, the aperture diameter is smaller, that is, the propagation distance is long, so that the loss increases. TE ₁₃ In the mode cut-off diameter, when applied to information reproduction, the number of obtained peaks increases (five peaks), and therefore extra information is detected due to the influence. Therefore, considering the propagation distance and the number of peaks, TE ₁₂ An optical fiber probe with a mode cutoff diameter is desirable.
[0074]
Based on such analysis results, experimental results when the mode propagating into the core of the optical fiber probe is set to a core diameter of a cutoff diameter (900 to 920 nm, light wavelength λ = 830 nm) that becomes the TE12 mode. Is shown in FIG.
[0075]
According to FIG. 12 (solid line: experimental result), the spot diameter is about 150 nm and the electric field strength at the peak center is 1 [a. u], the spot diameter (175 nm) and the electric field intensity (1 [au]) according to the analysis result (dotted line) in FIG. 11, and the electric field intensity when the core diameter is the cut-off diameter of the TE12 mode. It can be seen that a tiny spot can be obtained. As for the spot shape, very good agreement is obtained between the experimental result and the analysis result.
[0076]
FIG. 13 shows the results of analysis using such an optical fiber probe and the results of experiments using Si, which is a high refractive index medium, which is the material of the Si protrusion 3 of this example, as the core material.
[0077]
According to FIG. 13, when the core material is Si, the core made of Si is made to coincide with the cutoff diameter (0.4 μm) of the TE12 mode, thereby forming a small spot diameter (about 75 nm) and the electric field strength. Can be obtained.
[0078]
Therefore, by setting the aperture diameter of the Si protrusion 3 to the cut-off diameter of the TE12 mode, a probe array 1 or a single probe that can form a small spot diameter and obtain a maximum electric field strength as in the case of the optical fiber probe. Can be produced. Further, the probe array 1 or the single probe can have a small loss and a small number of peaks, and can be optimal for information recording / reproduction.
[0079]
Further, when forming the metal layer 15, as shown in FIG. 1, a light shielding film may be formed only on the inclined surface of the active layer 11b and the protruding portion forming surface of the substrate or the inclined surface of the protruding portion.
[0080]
When producing the probe array 1 in which the metal layer 5 is formed only on the inclined surface of the Si protrusion 3, SiO 2 ₂ As shown in FIG. 14, the shape of the mask made of the layer 12 is changed to SiO on the tip position of the Si protrusion 3 to be produced. ₂ The central portion 12a of the layer 12 is set to a predetermined thickness, and the SiO 2 other than the tip position of the Si protrusion 3 is formed. ₂ The peripheral portion 12b of the layer 12 is set to a thickness equal to or less than a predetermined thickness. For example, the thickness of the central portion 12a is at least about 200 nm, and the thickness of the peripheral portion 12b is about 1/5 to 1/10 of the thickness of the central portion 12a.
[0081]
Such a shape of SiO ₂ The layer 12 and the active layer 11 are etched using an etchant as shown in FIGS. 14 (a), 14 (b), and 14 (c), and finally the active layer as shown in FIG. 14 (d). The central portion 12a is left only at the tip portion of 11a. Then, the metal layer 15 is formed using the remaining central portion 12a as a cap, and the central portion 12a is removed by wet etching, as shown in FIG. 14E, so that the metal layer 15 is formed at the tip portion of the active layer 11a. What is not formed can be produced, and the metal layer 15 can be formed only on the inclined surface of the active layer 11a.
[0082]
In the probe array 1 manufactured in this way, light other than the light generated from the tip of the Si protrusion 3 can be blocked. Therefore, compared with the case shown in FIG. Improve.
[0083]
Next, the light efficiency of the probe array 1 manufactured as described above will be described. FIG. 15A shows a measuring device for measuring the light efficiency of the probe array 1. This measuring apparatus emits a laser beam having a wavelength of 830 nm from a laser diode 21, and has a sharpened portion 25 (opening diameter = 100 nm) of an optical fiber probe that is composed of a core 22, a clad 23, and a metal coating layer 24 with a sharpened tip. To generate near-field light. The probe array 1 is configured to detect near-field light generated at the sharpened portion 25 of the optical fiber probe and detect light passing through the Si protrusion 3 and the glass substrate 2 with the photodetector 26. Here, the opening diameter of the sharpened portion 25 of the optical fiber probe is 100 nm. In such a measuring apparatus, when the laser beam is incident from the optical fiber probe, the light intensity of the near-field light generated at the tip portion of the Si protrusion 3 can be measured, and thereby the probe in the near-field region can be measured. The throughput of the array can be determined. Further, in order to evaluate the throughput and resolution of the probe array 1, an internal condensing probe (aperture diameter D = 920 nm) having high throughput (10%) and high resolution (150 nm) characteristics was also measured as a fiber probe. (FIG. 15B).
[0084]
Using such a measuring device, the intensity of light detected by the photodetector 27 [a. u. ] And the light detection position [μm] are shown in FIG. In FIG. 16, a characteristic A (solid line) is a measurement result for the probe array 1 manufactured in the above-described process, and a characteristic B (dotted line) is a measurement result for the internal focusing probe. Comparing characteristics A and B, it can be seen that the probe array 1 has an efficiency of 10%, has a higher throughput (about 15%) than the internal focusing probe, and has a resolution of 75 nm.
[0085]
Therefore, according to the probe array 1 manufactured by the manufacturing method as described above, it is possible to collect light with high efficiency and generate near-field light with high light intensity at the tip portion of the Si protrusion 3. At the same time, sample measurement can be performed with high resolution.
[0086]
Further, according to the probe array 1, it is possible to realize recording and / or reproduction of a signal on the recording medium by irradiating the recording medium with light with a high recording density and a high S / N.
[0087]
Next, another example of manufacturing the probe array 1 or a single probe will be described. In addition, the method demonstrated by the manufacturing method of the above-mentioned probe array 1 or a single probe can also be applied when manufacturing the probe array 1 or the single probe shown below.
[0088]
In the method of manufacturing the probe array 1 described above, the material of the protrusions produced on the glass substrate 14 is not limited to Si, and any material having a higher refractive index than that of the glass substrate 14 may be used. As a material having a light transmission region on the shorter wavelength side than Si and having a high refractive index, GaP and TiO are used. ₂ (Commonly called rutile). GaP has a light transmission region at 530 nm to 16 μm, and the refractive index in the light transmission region is 3.35. TiO ₂ Has a light transmission region at 450 nm to 6 μm, and the refractive index in the light transmission region is 2.61 to 2.90.
[0089]
FIG. 17 shows a method for producing a probe array or a single probe using GaP. In addition, the method demonstrated by the manufacturing method of the above-mentioned probe array 1 or a single probe can also be applied when manufacturing the probe array 1 or the single probe shown below.
[0090]
First, as shown in FIG. 17A, a single crystal GaP wafer 43 is bonded to a single crystal Si wafer 41 with an oxide film 42 as an intermediate layer by direct bonding or room temperature bonding. A substrate is prepared in which the thickness of the single crystal GaP wafer 43 is 5 to 10 μm by etching or CMP.
[0091]
Next, as shown in FIG. 17B, the glass substrate 44 and the single crystal GaP wafer 43 are bonded by anodic bonding, direct bonding, or room temperature bonding.
[0092]
Next, as shown in FIG. 17C, the single crystal Si wafer 41 is removed.
[0093]
Next, as shown in FIG. ₂ SiO composed of layers ₂ A pattern 42 A is formed on the single crystal GaP wafer 43. Where each SiO ₂ The pattern 42A has an appropriate pattern and dimensions for forming a protrusion made of GaP in a later step.
[0094]
Next, as shown in FIG. 17E, a GaP protrusion 43A is formed on the single crystal GaP wafer 43 by RIE or liquid etchant using the pattern 42A as an etching mask. Where SiO ₂ The GaP protrusion 43A may be fabricated using only photolithography as an etching mask without using the layer as an etching mask.
[0095]
Next, as shown in FIG. 17F, the SiO remaining on the GaP protrusion 43A. ₂ The pattern 42A is removed with dilute hydrofluoric acid or the like.
[0096]
Next, as shown in FIG. 17G, a metal layer 45 is formed on the side surface of the GaP protrusion 43A and the surface of the glass substrate 44 without the GaP protrusion 43A.
[0097]
Thereby, a protruding probe array having a plurality of protruding portions made of GaP can be produced. In addition to GaP, TiO ₂ Even when other materials such as the above are used, a probe array having protrusions can be manufactured by substantially the same process.
[0098]
GaP and TiO ₂ A probe array having a plurality of protrusions made of a material has a higher light transmission region on the short wavelength side than a probe array made of Si, so that light absorption in the short wavelength region is less and higher light utilization efficiency is obtained. Can do. Further, since light having a shorter wavelength than that of Si can be used, a smaller light spot can be formed, and for example, the recording density when recording on a recording medium can be improved.
[0099]
Next, an example of manufacturing a probe array using a Si wafer other than the SOI substrate will be described with reference to FIG. In addition, the method demonstrated by the manufacturing method of the above-mentioned probe array 1 or a single probe can also be applied when manufacturing the probe array 1 or the single probe shown below.
[0100]
First, as shown in FIG. 18A, a substrate is prepared in which an n-type Si layer 52 having a thickness of 5 to 10 μm is formed on a p-type Si layer 51 having a thickness of several hundred μm. Here, the n-type Si layer 52 may be formed by epitaxial growth on the p-type Si layer 51, or formed by diffusing n-type impurities on the surface of the p-type Si layer 51 by solid layer diffusion, ion implantation, or the like. You may do it. Alternatively, the p-type Si layer 51 and the n-type Si layer 52 may be bonded together.
[0101]
Next, as shown in FIG. 18B, a glass substrate 53 is prepared, and the glass substrate 53 and the surface of the n-type Si layer 52 of the substrate made of the p-type Si layer 51 and the n-type Si layer 52 are in contact with each other. As shown in FIG. Here, an electrode 54 is formed on the surface of the glass substrate 53 that does not contact the n-type Si layer 52 and the surface of the p-type Si layer 51 that does not contact the n-type Si layer 52, or an electrode plate is placed between the electrodes 54. A power supply 55 for providing the potential difference Vb is provided for anodic bonding. At this time, the glass substrate 53 and the n-type Si layer 52 may be bonded using direct bonding or room temperature bonding different from anodic bonding.
[0102]
Next, as shown in FIG. 18C, after the p-type Si layer 51 is substantially removed by mechanical polishing or chemical mechanical polishing (CMP), hydrazine (N ₂ H _Four ・ H ₂ O), KOH aqueous solution, NaOH aqueous solution, CaOH aqueous solution, EDP (Ethylenediamine Pyrocatechol (water)), TMAH (Tetramethyl Ammoniumhydroxide, (CH) _Three ) _Four Etching with an alkali etchant such as NOH). However, at this time, etching is performed by providing a power source 57 for applying a voltage Vce between the n-type Si layer 52 and the reference electrode 56 placed in the etchant.
[0103]
An outline of an etching apparatus for realizing such an etching method (electrochemical etching) is shown in FIG. In this etching apparatus, a Pt electrode 61 corresponding to the reference electrode 56, a power source 62 corresponding to the power source 57, an ammeter 63, and an etching material 64 corresponding to a substrate composed of the n-type Si layer 52 and the glass substrate 53 are connected in series. And a Pt electrode 61 and an etching material 64 are arranged in an etchant 65. In this etching apparatus, the etchant 65 is stirred by the stirrer 66 and kept at 90 ° C. by the heater 67.
[0104]
By using such an etching apparatus, for example, the alkali etchant is made of SiO in addition to the p-type Si layer 51. ₂ (The main component of the glass substrate 53) is also etched, but the glass substrate 53 is so thick that it is not etched at all. Further, since the n-type Si layer 52 and the glass substrate 53 are very firmly bonded, the etchant does not enter between them, and the n-type Si layer 52 is not etched. Therefore, only the p-type Si layer 51 and the etching are performed. In the above-described hydrofluoric acid nitric etchant, when the n-type Si layer 52 is exposed, the etching hardly proceeds any further, so that the etching can be stopped when the p-type Si layer 51 is completely etched.
[0105]
Next, as shown in FIG. 18D, the surface of the n-type Si layer 52 is made of SiO 2 by plasma CVD or thermal CVD. ₂ Or Si _Three N _Four A pattern forming layer 58 that is difficult to be etched by an alkali etchant such as is formed.
[0106]
Next, as shown in FIG. 18 (e), the pattern forming layer 58 is formed in a predetermined shape, thereby forming a pattern 58 </ b> A composed of the pattern forming layer 58 on the n-type Si layer 52. Here, the pattern forming layer 58 has an appropriate pattern and dimensions for forming each Si protrusion.
[0107]
Next, as shown in FIG. 18F, the Si protrusion 52A is formed using an alkali etchant such as hydrazine, KOH aqueous solution, NaOH aqueous solution, CaOH aqueous solution, EDP, TMAH or the like. Here, instead of using the pattern 58A as an etching mask, the Si protrusion 52A may be formed by RIE using only photolithography as an etching mask.
[0108]
Next, as shown in FIG. 18G, the pattern 58A remaining on the Si protrusion 52A is removed with diluted hydrofluoric acid or the like.
[0109]
Next, as shown in FIG. 18H, a metal layer 59 is formed on the side surface of the Si protrusion 52A and the glass substrate 53 on which the Si protrusion 52A is not formed.
[0110]
Thereby, a protruding probe array or a single probe whose protruding portion is made of Si can be manufactured without using an SOI substrate.
[0111]
Next, still another example of manufacturing a probe array or a single probe will be described with reference to FIG.
[0112]
First, as shown in FIG. 20A, a low-concentration p-type having a thickness of 5 to 10 μm is formed on a high-concentration Si layer 71 made of a high-concentration p-type or n-type Si material having a thickness of several hundred μm. Alternatively, a substrate on which a low concentration Si layer 72 made of an n-type Si material is formed is prepared. Here, the low-concentration Si layer 72 may be formed by epitaxial growth on the high-concentration Si layer 71, and the opposite type of impurity is diffused on the surface of the high-concentration Si layer 71 by solid layer diffusion, ion implantation or the like. Thus, the impurity concentration may be effectively reduced by the compensation effect. Alternatively, the high concentration Si layer 71 and the low concentration Si layer 72 may be bonded together.
[0113]
Here, the high-concentration Si layer 71 and the low-concentration Si layer 72 are important in that the impurity concentration is high or low, and the combination of p-type and n-type is arbitrary. However, when the low-concentration Si layer 72 side and the high-concentration Si layer 71 side have different conductivity types, it is desirable that the low-concentration Si layer 72 side be an n-type Si material. This is because the pn junction is more easily forward-biased when a voltage is applied to the anode junction. The impurity concentration of the high concentration Si substrate is about 10 ¹⁷ / Cm ^Three Do more. Conversely, the impurity concentration of the Si substrate at a low concentration is about 10 ¹⁷ / Cm ^Three The following.
[0114]
Next, as shown in FIG. 20B, a glass substrate 73 is prepared, and anodic bonding is performed so that the glass substrate 73 and the surface of the low-concentration Si layer 72 are in contact with each other. Here, electrodes 74 are formed on the surface of the glass substrate 73 that does not contact the low-concentration Si layer 72 and the surface of the high-concentration Si layer 71 that does not contact the low-concentration Si layer 72, or an electrode plate is placed between each electrode 74. A power supply 75 for providing a potential difference Vb is provided to perform anodic bonding. At this time, the glass substrate 73 and the low-concentration Si layer 72 may be bonded using direct bonding or room temperature bonding different from anodic bonding.
[0115]
Next, as shown in FIG. 20C, the high-concentration Si layer 71 is substantially removed by mechanical polishing or chemical mechanical polishing (CMP), and then immersed in an etchant of hydrofluoric acid. The composition of the etchant is HF: HNO _Three : CH _Three COOH = 1: 3: 8 (volume ratio). This etchant has about 10 impurities ¹⁷ / Cm ^Three When it is less, the etching rate is 1/150 than when it is more. This etchant is made of SiO in addition to Si. ₂ (Glass main component) is also etched, but the glass substrate 73 is very thick and is not etched at all. Further, since the low-concentration Si layer 72 and the glass substrate 53 are joined very firmly, no etchant enters between them, and the low-concentration Si layer 72 is not etched. Therefore, only the high concentration Si layer 71 and the low concentration Si layer 72 are etched. HF: HNO _Three : CH _Three In etching using COOH = 1: 3: 8 (volume ratio) as an etchant, when the high-concentration Si layer 71 is etched first and the low-concentration Si layer 72 is exposed, the etching hardly proceeds any further. The etching can be stopped when the layer 71 has been etched.
[0116]
Next, as shown in FIG. 20D, the surface of the low-concentration Si layer 72 is made of SiO by plasma CVD or thermal CVD. ₂ Or Si _Three N _Four A pattern forming layer 8 that is difficult to be etched by an alkali etchant such as is formed.
[0117]
Next, as shown in FIG. 20E, the pattern forming layer 78 is formed in a predetermined shape, thereby forming a pattern 78 </ b> A composed of the pattern forming layer 78 on the low concentration Si layer 72. Here, the pattern forming layer 78 has an appropriate pattern and dimensions for forming a single protrusion or each Si protrusion.
[0118]
Next, as shown in FIG. 20F, the Si protrusion 72A is formed using an alkali etchant such as hydrazine, KOH aqueous solution, NaOH aqueous solution, CaOH aqueous solution, EDP, TMAH or the like. Here, instead of using the pattern 78A as an etching mask, the Si protrusion 72A may be formed by RIE using only photolithography as an etching mask.
[0119]
Next, as shown in FIG. 20G, the pattern 78A remaining on the Si protrusion 72A is removed by dilute hydrofluoric acid, dry etching, or the like.
[0120]
Next, as shown in FIG. 20H, a metal layer 79 is formed on the glass substrate 73 on which the side surfaces of the Si protrusions 72A and the Si protrusions 72A are not formed.
[0121]
Thereby, a protruding probe array or a single probe whose protruding portion is made of Si can be manufactured without using an SOI substrate.
[0122]
Next, still another example when a probe array or a single probe is manufactured will be described with reference to FIG.
[0123]
First, as shown in FIG. 21A, an n-type Si layer 81 made of an n-type Si material having a thickness of several hundred μm has an impurity concentration higher than that of the n-type Si layer 81 having a thickness of 5 to 10 μm. A substrate on which a high-concentration p-type Si layer 82 made of a high-concentration p-type Si material is formed is prepared. Here, the concentration of the high-concentration p-type Si layer 82 is about 10 when KOH is used for etching the n-type Si layer 81. ²⁰ / Cm ^Three Do more. When using EDP, about 10 ¹⁹ / Cm ^Three Do more. The high-concentration p-type Si layer 82 may be formed by epitaxial growth on the n-type Si layer 81, and this and p-type impurities are diffused on the surface of the high-concentration Si layer 71 by solid layer diffusion, ion implantation, or the like. It may be formed. Alternatively, the n-type Si layer 81 and the high-concentration p-type Si layer 82 may be bonded together.
[0124]
Next, as shown in FIG. 21B, a glass substrate 83 is prepared, and anodic bonding is performed so that the glass substrate 83 and the surface of the high-concentration p-type Si layer 82 are in contact with each other. Here, an electrode plate is placed on the surface of the glass substrate 83 that is not in contact with the high-concentration p-type Si layer 82 as in FIG. Alternatively, more reliably, the electrode 84a is formed, and part of the n-type Si layer 81 is removed so that a voltage is applied to the high-concentration p-type Si layer 82 to form the electrode 84b. A power supply 85 for providing a potential difference Vb is provided between 84b to perform anodic bonding. At this time, the glass substrate 83 and the high-concentration p-type Si layer 82 may be bonded using direct bonding or room temperature bonding different from anodic bonding.
[0125]
Next, after removing the electrodes 84a and 84b, as shown in FIG. 21C, the n-type Si layer 81 is substantially removed by mechanical polishing or chemical mechanical polishing (CMP), and then etched by an alkali etchant. As the etchant, an alkaline etchant such as hydrazine, KOH aqueous solution, NaOH aqueous solution, CaOH aqueous solution, EDP, or TMAH is used. This etchant is made of SiO in addition to Si. ₂ (Glass main component) is also etched, but the glass substrate 73 is very thick and is not etched at all. Further, since the high-concentration p-type Si layer 82 and the glass substrate 83 are very firmly bonded, the etchant does not enter between them, and the high-concentration p-type Si layer 82 is not etched. . Therefore, only the n-type Si layer 81 is etched. When the high-concentration p-type Si layer 82 is exposed, the etching hardly proceeds any further, so that the etching can be stopped when the n-type Si layer 81 is completely etched.
[0126]
Next, as shown in FIG. 21 (d), the surface of the high-concentration p-type Si layer 82 is made of SiO by plasma CVD or thermal CVD. ₂ Or Si _Three N _Four A pattern forming layer 88 that is difficult to be etched by an alkali etchant such as is formed.
[0127]
Next, as shown in FIG. 21E, a pattern 88A composed of the pattern formation layer 88 is formed on the high concentration p-type Si layer 82 by forming the pattern formation layer 88 into a predetermined shape. Here, the pattern formation layer 88 has an appropriate pattern and dimensions for forming a single protrusion or each Si protrusion.
[0128]
Next, as shown in FIG. 21F, Si protrusions 82A are formed by RIE. Here, instead of using the pattern 88A as an etching mask, the Si protrusion 82A may be formed by RIE using only a resist pattern formed by photolithography as an etching mask.
[0129]
Next, as shown in FIG. 21G, the pattern 88A remaining on the Si protrusion 82A is removed by dilute hydrofluoric acid, dry etching, or the like.
[0130]
Next, as shown in FIG. 21H, a metal layer 89 is formed on the side surface of the Si protrusion 82A and the glass substrate 83 on which the Si protrusion 82A is not formed.
[0131]
Thereby, a protruding probe array or a single probe whose protruding portion is made of Si can be manufactured without using an SOI substrate.
[0132]
Next, another probe array to which the present invention is applied will be described. In the probe array described below, the configuration described in the probe array described above may be applied, or a single probe may be used.
[0133]
The probe array 100 shown in a plan view in FIG. 22 (a) is arranged such that the formation side of the projection 101 faces a rotary recording medium (optical disc D) for recording information as shown in FIG. 22 (b). Information is recorded and reproduced by irradiating the rotating optical disk D with light.
[0134]
As the optical disk D rotates, the probe array 100 has one end 100a as a medium entry end and the other end 100b as a medium exit end. This probe array 100 receives the airflow generated from the optical disk D by rotating the optical disk D, contacts the optical disk D, and irradiates the optical disk D with light to perform contact-type recording / reproduction. The probe array 100 according to the present embodiment can also be applied to a floating type that floats on the optical disk D with a constant flying height.
[0135]
The probe array 100 includes a bank portion 102 that is disposed at a position surrounding the periphery of the protrusion 101 and has an opening 102a on the outflow side of the air flow generated when the optical disk D rotates.
[0136]
In such a probe array 100, the airflow that flows in from one end 100a flows toward the other end 100b of the opening of the bank 102, and flows out toward the other end 100b through the opening 102a.
[0137]
Thereby, in this probe array 100, the bank 102c orthogonal to the air flow generation direction (medium rotation direction) is provided on the one end 100a side of the protruding portion 101 as the bank portion 102, whereby the one end 100a to the other end 100b. It is possible to stop the dust flowing into the projection 101 from flowing into the protrusion 101.
[0138]
Further, in the probe array 100, even if dust or dirt existing in the apparatus flows into the bank 102 together with the air flow, it flows out from the opening 102a, so that dust or the like may accumulate near the protrusion 101. No.
[0139]
Furthermore, in this probe array 100, since the bank part 102 is not provided on the other end 100b side, the protruding part 101 can be formed on the other end 100b side. Thereby, in the probe array 100, the tip portion of the protrusion 101 can be brought close to the optical disc D to reduce the distance between the protrusion 101 and the optical disc D, the spot diameter of the light irradiated on the optical disc D can be reduced, and the optical disc The recording density on D can be increased.
[0140]
Furthermore, in this probe array 100, the bank part 102 has a tapered part 102b inclined from the one end 100a to the other end 100b at the end part 102b of the other end 100b. The apex portion of the tapered portion 102b is in line with the tip of the protruding portion 101 in the short axis direction of the glass substrate. Thereby, in the probe array 100, even when the apex portion of the taper portion 102b contacts the optical disc D during recording and reproduction, the pressure at the apex portion of the bank portion 102 can be diffused to prevent damage.
[0141]
Furthermore, in the probe array 100, the one end 100a side of the bank 102c is a tapered portion 102d that is inclined from the one end 100a side toward the other end 100b side. Thereby, in the probe array 100, even if the optical disc D enters and contacts the optical disc D bank 102c, the impact with the optical disc D can be absorbed and damage to the optical disc D can be suppressed.
[0142]
Furthermore, the probe array 100 includes banks 102e and 102f that are substantially parallel to the air flow generation direction (medium rotation direction) and orthogonal to the radial direction of the optical disk D as the bank unit 102. Tapered portions 102g and 102h inclined in the direction are provided. As a result, in the probe array 100, even when the banks 102e and 102f come into contact with the optical disc D when moving in the radial direction during recording / reproduction on the optical disc D, the impact with the optical disc D is absorbed and Damage can be suppressed.
[0143]
Furthermore, the probe array 100 includes a protruding portion 103 formed by protruding a glass substrate on the other end 100b side. The protrusion 103 has a length t from the protrusion 101 toward the other end 100b. ₈ Only protruding. The length t of this protrusion 103 ₈ Is set so that the light emitted from the light source can be incident on the protrusion 101 on the other end 100b side during recording and reproduction. That is, the length t of the protrusion 103 ₈ Is determined based on the thickness of the glass substrate, the refractive index of the glass substrate, and the numerical aperture of the optical element (objective lens) 104 that makes light incident on the protrusion 101. As a result, the probe array 100 has the determined length t. ₈ , And the protrusion 101 is disposed on the other end 100b side, so that the distance from the optical disc D can be reduced, and light with a small spot diameter is condensed on the optical disc D.
[0144]
Furthermore, as shown in FIG. 23, in the probe array 100, the bank 102f and the bank 102e of the protrusion 103 may be multi-staged. According to such a probe array 100, the tapered portion 102b and the tapered portion 102i are formed from the other end 100b to the one end 100a, and the apex position of the tapered portion 102i and the tip of the protruding portion 101 are in a straight line in the minor axis direction. It has become.
[0145]
According to such a probe array 100, even if it contacts with the optical disk D, the apex part of the taper part 102b and the taper part 102i contacts with the optical disk D, and compared with the case where one point contacts with the optical disk D, The applied force can be dispersed to suppress damage to the protrusion 101 and to reduce damage to the optical disc D.
[0146]
Further, according to such a probe array 100, the bank portion 102 is multi-staged, and when recording / reproduction is performed in contact with the optical disc D, the taper portion 102b and the taper portion 102i come into contact with each other, thereby recording. It is possible to prevent the overall inclination during reproduction.
[0147]
Furthermore, according to such a probe array 100, since the bank part 102 is multistage, the static friction coefficient is reduced by reducing the contact area with the optical disc D, and the wear amount of the bank part 102 is suppressed. can do.
[0148]
Further, since the probe array 100 and the recording medium are in contact with each other at two points with respect to the air flow generation direction, so-called pitching that flutters in this direction is less likely to occur.
[0149]
Next, still another probe array to which the present invention is applied will be described. In the probe array described below, the configuration described in the probe array described above may be applied, or a single probe may be used.
[0150]
The probe array 110 shown in a plan view in FIG. 24A is arranged so that the formation side of the protrusion 111 faces the rotary recording medium (optical disc D) for recording information as shown in FIG. Information is recorded and reproduced by irradiating the rotating optical disk D with light.
[0151]
The probe array 110 is made of the same high refractive index material (for example, Si) as the protrusions 111, the bank part 112 arranged at a position surrounding each protrusion 111, and the pad part made of the same material as the protrusion 111. 113 and the surface facing the optical disc D.
[0152]
As described above, the probe array 110 has an etching layer (for example, SiO 2) that is subjected to pattern etching on a single high refractive index layer when the protrusion 111, the bank 112, and the pad 113 are formed. ₂ ) Are formed, patterned corresponding to the protrusions 111, the bank 112, and the pad 113, and etched simultaneously.
[0153]
In such a probe array 110, the protrusion 111, the bank 112, and the pad 113 are in contact with the optical disk D, and the optical disk D is irradiated with light from the protrusion 111, and information is recorded on and reproduced from the optical disk D.
[0154]
Since the probe array 110 manufactured in this way is etched simultaneously with the same material, the protrusion 111, the bank 112 and the pad 113 can have the same height, and the stability of sliding during recording and reproduction Can be improved, and damage to the protrusion 111 can be suppressed.
[0155]
In such a probe array 110, 100 protrusions 111 are arranged, light having a wavelength of 830 nm is incident on each protrusion 111 to generate near-field light at the tip, and the phase change type optical disk D is set to 0. FIG. 25 shows the relationship between the mark length [μm] and the CN ratio [dB] when rotated at a linear velocity of 43 m / s. According to FIG. 25, the mark length when recorded by the probe array 110 is a minimum of 110 nm, and the CN ratio when reproduced is about 10 dB. According to this result, each projection 111 can record and reproduce a recording mark below the diffraction limit, which was impossible with propagating light.
[0156]
On the other hand, the minimum mark length when recording is performed by irradiating the optical disc D with propagating light by an objective lens having a numerical aperture of 0.4 is 515 nm, and the CN ratio when reproducing is about 10 dB.
[0157]
From these results, according to the probe array 110, recording / reproducing can be performed at a recording / reproducing speed of 1 Gbps by recording / reproducing in parallel by 100 projections 111, and the mark length can be increased. It is possible to reduce the recording density for ultra-high density.
[0158]
Next, still another probe array to which the present invention is applied will be described. In the probe array described below, the configuration described in the probe array described above may be applied, or a single probe may be used.
[0159]
A probe array 120 having a plan view shown in FIG. 26 (a) is arranged such that the formation side of the protrusion 121 is opposed to a rotary recording medium (optical disc D) for recording information as shown in FIG. 26 (b). Information is recorded and reproduced by irradiating the rotating optical disk D with light.
[0160]
The probe array 120 is made of the same high refractive index material (for example, Si) as the protrusions 121, and has a bank part 112 arranged at a position surrounding each protrusion 111 and a pad part made of the same material as the protrusion 121. 123 and the optical disc D are provided on the surface facing each other. In the probe array 120, the bank part 122 and the pad part 123 are in contact with the optical disk D, and information is recorded and reproduced.
[0161]
The pad portion 123 is centered on the center line at the center position between the one end 120a and the other end 120b of the probe array 120 or at a position within a range of ± 0.1 when the overall length is 1 from the center position. It is formed so that the position is arranged. That is, the pad portion 123 is disposed immediately below the pressing direction of the pressing member 124 (thickness direction of the probe array 120), and the pressing member 124 that presses the probe array 120 so as to contact the optical disc D is in contact with the probe array 120. The Accordingly, the pad portion 123 transmits the pressing force of the pressing member 124 to the optical disc D, and presses the probe array 120 against the optical disc D. Thereby, the probe array 120 can further improve the stability of sliding. Further, the pad portion 123 may be formed not only when the center position is formed at the predetermined position but also at the center of gravity position at the predetermined position.
[0162]
That is, according to the probe array 120, the jump amount when recording / reproducing with respect to the optical disc D is suppressed as compared with the probe array 110 described above. In the following, the amount of jump between the probe array 110 with the pad portion provided on the medium entry side and the probe array 120 with the pad portion provided at the center position will be compared.
[0163]
For comparison, a jump amount measuring device 130 as shown in FIG. 27 was used. The jump amount measuring device 130 includes an FFT (fast Fourier transform) measuring device 131, a Doppler vibrometer 132, and a motor 133 that rotates the optical disc D. The probe array is arranged on the optical disc D and measures the vibration of the probe array. Is.
[0164]
According to the jump amount measuring apparatus 130, the laser beam is emitted from the light source 141 while the optical disk D is rotated by the motor 133 in the CLV method (linear velocity = 0.43 m / s) and the probe array is disposed on the optical disk D. Is irradiated to the probe array via the beam splitter 142 and the optical fiber cable 143, and the reflected laser light is detected by the photodetector 146 via the optical fiber cable 143, the beam splitter 142, the AOM 144, and the beam splitter 145. The jump amount measuring device 130 irradiates the recording layer on the surface of the optical disc D with the laser light emitted from the light source 141 via the beam splitters 142 and 147 and the optical fiber cable 148, and the reflected laser light is applied to the optical fiber cable. 148, the beam splitter 147, the mirror 149, and the beam splitter 145 enter the photodetector 146. Here, the reflected laser light from the probe array and the reflected laser light from the optical disk D incident on the beam splitter 145 are combined and incident on the photodetector 146. The FFT measuring device 131 obtains the jump amount of the probe array 1 by performing a Fourier transform process on the detection signal based on the jump of the probe array.
[0165]
The result of the jump amount obtained by such a jump amount measuring apparatus 130 is shown in FIG.
FIG. 28 shows the jump amount of the probe arrays 110 and 120 on the vertical axis, the measurement time on the horizontal axis, the jump state of the probe array 110 on the upper stage, and the jump state of the probe array 120 on the lower stage.
[0166]
According to FIG. 28, when the standard deviation of the jump amount is σ, 2σ = about 1.0 nm for the probe array 110, whereas 2σ = 0.6 nm for the probe array 120.
[0167]
Therefore, according to the probe array 120, the amount of jumping can be reduced and stable sliding can be realized by arranging the pad portion 122 at the center position as compared with the probe array 110.
[0168]
In the embodiment described above, the probe array 1 or the single probe that generates the near-field light has been described in the present invention. However, the present invention is not limited to the probe array or the single probe that emits propagating light (light that is not near-field light). It can also be applied to probes. In the probe array or the single probe, the size of the opening at the tip is changed by means for supplying energy to the recording medium. In this probe array or single probe, for example, when supplying energy mainly in the form of ordinary light (propagating light) like the fiber probe previously proposed by the applicant of the present invention in JP-A-11-271339. The size of the opening at the tip is about the wavelength of the emitted light or more. Further, in the probe array or single probe, when energy is supplied in the form of evanescent light (near-field light), the size of the opening at the tip is made smaller than the wavelength of the emitted light. Thereby, even if it is an internal condensing type | mold probe, this invention is applicable.
[0169]
The present invention can be applied to either the above-described near-field light or propagating light. Further, both near-field light and propagating light may be emitted from the tip of the protrusion at the same time.
[0170]
In the above-described embodiment, when the probe array 1 or the single probe is manufactured, an example using the SOI substrate 10 manufactured by crystal growth has been described. However, after bonding of single crystal silicon wafers by direct bonding or the like, It may be fabricated by using a bonding method in which the silicon on the active layer 11 side is polished and finished to a desired thickness, or a SIMOX method in which an oxide film is formed below the substrate surface by ion implantation of oxygen ions. Even in these cases, the uniformity of the thickness of the active layer 11 at the atomic level is obtained.
[0171]
Furthermore, although # 7740 of Corning Inc. and SW-3 of Iwaki Glass were mentioned as the glass substrate 14 which has translucency, you may use another board | substrate. Specifically, in the case of using the above-described direct bonding at room temperature, a quartz substrate or a light-transmitting resin can be used. In particular, when quartz is used, the translucent substrate and the Si layer can be bonded by high-temperature direct bonding. In this method, the surfaces of the substrate are sufficiently washed, dust and dirt on the surface are removed and dried, and the surfaces are brought into contact with each other in a normal atmosphere. Thereafter, the substrate is bonded by performing a heat treatment at 900 ° C. or higher in nitrogen.
[0172]
Furthermore, in the above-described embodiment, an example of anodic bonding has been described as a method of bonding the active layer 11 of the SOI substrate 10 and the glass substrate 14, but other bonding methods may be used. That is, room temperature direct bonding (room temperature bonding) may be used as a method of bonding the active layer 11 and the glass substrate 14. The room-temperature bonding is performed after so-called RCA cleaning of a mirror-polished silicon wafer, glass substrate, or metal substrate. ^-9 In a vacuum chamber in a Torr atmosphere, an Ar FAB (Fast Atomic Beam) is simultaneously irradiated onto each of the two substrates for about 300 seconds, and then subjected to pressure bonding at a pressure of 10 MPa. Thereby, the joint strength after returning to the atmosphere becomes 12 MPa or more. A probe array to which the present invention is applied can also be produced by bonding the active layer 11 and the glass substrate 14 which is a quartz substrate at room temperature. Moreover, in the example of said joining, besides the joining of the active layer 11 and the glass substrate 14 which has translucency, the above-mentioned GaP or TiO ₂ The probe array to which the present invention is applied can be manufactured by bonding the layer, the n-type Si layer 52, the low-concentration Si layer 72, the high-concentration p-type Si layer 82, and the light-transmitting substrate. The RCA cleaning is a cleaning method based on hydrogen peroxide solution proposed by RCA.
[0173]
Furthermore, the Si layer and the translucent glass substrate 14 can be bonded by glass bonding using low-melting glass (frit glass).
[0174]
Furthermore, the layer in which the opening is made with an adhesive and the light-transmitting glass substrate 14 can be joined. In this case, an optical adhesive (for example, V40-J91 manufactured by Suruga Seiki Co., Ltd.) manufactured using a glass substrate so as to have a refractive index equal to that of glass can be used.
[0175]
Furthermore, in the above-described embodiment, anisotropic etching such as KOH is used to produce the Si protrusion 3, but dry etching such as reactive ion etching (RIE) may be used.
[0176]
Furthermore, in the above-described embodiment, the high refractive index material to be the protrusion is formed on the glass substrate by bonding. However, the vapor deposition method, the sputtering method, the plasma CVD (chemical vapor deposition) method, the thermal CVD method, A thin film made of a high refractive index material may be formed by a thin film forming technique such as a photo-CVD method.
[0177]
Furthermore, in the embodiment to which the present invention is applied, the probe array in which a plurality of Si protrusions 3 are mounted on the glass substrate 2 is shown. However, one Si protrusion 3 is mounted on the glass substrate 2. Even in the case, the effect of the present invention can be exhibited and included in the present invention.
[0178]
Furthermore, in the embodiment to which the present invention is applied, only the case where the shape of the Si protrusion portion 3 is a quadrangular pyramid shape has been described.
[0179]
Furthermore, in the embodiment to which the present invention is applied, an example in which Si is mainly used as the high refractive index material for forming the protrusions has been described. However, the present invention is not limited to this. (Microcrystalline) Si, polycrystalline Si, Si _x N _y (X and y are optional), TiO ₂ , TeO ₂ , Al ₂ O _Three , Y ₂ O _Three , La ₂ O ₂ S, LiGaO ₂ , BaTiO _Three , SrTiO _Three , PbTiO _Three , KNbO _Three , K (Ta, Nb) O _Three (KTN), LiNbO _Three LiTaO _Three , Pb (Mg _1/3 Nb _2/3 ) O _Three , (Pb, La) (Zr, Ti) O ₂ , (Pb, La) (Hf, Ti) O _Three , PbGeO _Three , Li ₂ GeO _Three , MgAl ₂ O _Four CoFe ₂ O _Four , (Sr, Ba) Nb ₂ O ₆ , La ₂ Ti ₂ O ₇ , Nd ₂ Ti ₂ O ₇ , Ba ₂ TiSi ₁₂ O ₈ , Pb _Five Ge _Three O ₁₁ , Bi _Four Ge _Three O ₁₂ , Bi _Four Si _Three O ₁₂ , Y _Three Al _Five O ₁₂ , Gd _Three Fe _Five O ₁₂ , (Gd, Bi) _Three Fe _Five O ₁₂ , Ba ₂ NaNbO ₁₅ , Bi ₁₂ GeO ₂ 0, Bi ₁₂ SiO ₂ 0, Ca ₁₂ Al ₁₄ O ₃₃ , LiF, NaF, KF, RbF, CsF, NaCl, KCl, RbCl, CsCl, AgCl, TlCl, CuCl, LiBr, NaBr, KBr, CsBr, AgBr, TlBr, LiI, NaI, KI, CsI, Tl (Br, I ), Tl (Cl, Br), MgF ₂ , CaF ₂ , SrF ₂ , BaF ₂ , PbF ₂ , Hg ₂ Cl ₂ , FeF _Three , CsPbCl _Three , BaMgF _Four , BaZnF _Four , Na ₂ SbF _Five LiClO _Four ・ 3H ₂ O, CdHg (SCN) _Four , ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, α-HgS, PbS, PbSe, EuS, EuSe, GaSe, LiInS ₂ , AgGaS ₂ , AgGaSe ₂ , TlInS ₂ , TlInSe ₂ , TlGaSe ₂ , TlGaS ₂ , As ₂ S _Three , As ₂ Se _Three , Ag _Three AsS _Three , Ag _Three SbS _Three , CdGa ₂ S _Four , CdCr ₂ S _Four , Tl _Three TaS _Four , Tl _Three TaSe _Four , Tl _Three VS _Four , Tl _Three AsS _Four , Tl _Three PSe _Four , GaP, GaAs, GaN, (Ga, Al) As, Ga (As, P), (InGa) P, (InGa) As, (Ga, Al) Sb, Ga (AsSb), (InGa) (AsP), (GaAl) (AsSb), ZnGeP ₂ , CaCO _Three , NaNO _Three , Α-HIO _Three , Α-LiIO _Three , KIO ₂ F ₂ , FeBO _Three , Fe _Three BO ₆ , KB _Five O ₈ ・ 4H ₂ O, BeSO _Four ・ 2H ₂ O, CuSO _Four ・ 5H ₂ O, Li ₂ SO _Four ・ H ₂ O, KH ₂ PO _Four , KD ₂ PO _Four , NH _Four H ₂ PO _Four , KH ₂ AsO _Four , KD ₂ AsO _Four , CsH ₂ AsO _Four , CsD ₂ AsO _Four , KTiOPO _Four , RbTiOPO _Four , (K, Rb) TiOPO _Four , PbMoO _Four , Β-Gd ₂ (MoO _Four ) 3, β-Tb ₂ (MoO _Four ) 3, Pb ₂ MoO _Five , Bi ₂ WO ₆ , K ₂ MoOS _Three ・ KCl, YVO _Four , Ca _Three (VO _Four ) ₂ , Pb _Five (GeO _Four ) (VO _Four ) ₂ , CO (NH ₂ ) ₂ , Li (COOH) · H ₂ O, Sr (COOH) ₂ , (NH _Four CH ₂ COOH) _Three H ₂ SO _Four , (ND _Four CD ₂ COOD) _Three D ₂ SO _Four , (NH _Four CH ₂ COOH) _Three H ₂ BeF, (NH _Four ) ₂ C ₂ O _Four ・ H ₂ O, C _Four H _Three N _Three O _Four , C _Four H ₉ NO _Three , C ₆ H _Four (NO ₂ ) ₂ , C ₆ H _Four NO ₂ Br, C ₆ H _Four NO ₂ Cl, C ₆ H _Four NO ₂ NH ₂ , C ₆ H _Four (NH _Four ) OH, C ₆ H _Four (CO ₂ ) ₂ HCs, C ₆ H _Four (CO ₂ ) ₂ HRb, C ₆ H _Three NO ₂ CH3NH ₂ , C ₆ H _Three CH _Three (NH ₂ ) ₂ , C ₆ H ₁₂ O _Five ・ H ₂ OKH (C ₈ H _Four O _Four ), C _Ten H ₁₁ N _Three O ₆ , [CH ₂ ・ CF ₂ ] _n Can also be used.
[0180]
【The invention's effect】
As described above in detail, the probe according to the present invention includes a light-transmitting substrate and a protrusion formed on the substrate and made of a material having a refractive index higher than that of the substrate. The dimensional accuracy can be improved dramatically.
[0181]
In the probe manufacturing method according to the present invention, a light-transmitting first substrate and an intermediate layer are patterned, and the high-refractive index layer exposed by patterning is etched to form a conical protrusion on the first substrate. Since the portion is formed, the dimensional accuracy at the tip of the protruding portion can be dramatically improved.
[0182]
In another probe manufacturing method according to the present invention, the intermediate layer is patterned, and the GaP layer exposed by patterning is etched to form a cone-shaped projection on the first substrate. The accuracy can be improved dramatically.
[0183]
In another probe manufacturing method according to the present invention, a patterning material is formed on the surface of a low concentration layer, the patterning material is patterned, and the low concentration layer exposed by patterning is etched to form a pattern on the first substrate. Since the conical protrusions are formed on the top, the dimensional accuracy at the tip of the protrusion can be dramatically improved.
[0184]
In another probe manufacturing method to which the present invention is applied, a patterning material is formed on the surface of the n-type Si layer, the patterning material is patterned, and the n-type Si layer exposed by patterning is etched first. Since the conical projection is formed on the substrate, the dimensional accuracy at the tip of the projection can be dramatically improved.
[0185]
In another probe manufacturing method according to the present invention, a patterning material is formed on a surface of a high-concentration p-type Si layer, the patterning material is patterned, and the high-concentration p-type Si layer exposed by patterning is etched. Since the conical protrusion is formed on the first substrate, the dimensional accuracy at the tip of the protrusion can be dramatically improved.
[0186]
The probe array according to the present invention includes a plurality of cone-shaped protrusions formed on a substrate, made of a material having a higher refractive index than that of the substrate, and aligned in the tip position, so that light with high efficiency and high resolution can be obtained. Can be emitted.
[0187]
In the probe array manufacturing method according to the present invention, the intermediate layer is patterned, and the high refractive index layer exposed by patterning is etched to form a plurality of conical projections on the first substrate. It is possible to manufacture a probe array whose height is controlled to be constant in the intermediate layer.
[0188]
In another probe array manufacturing method according to the present invention, the intermediate layer is patterned, and the GaP layer exposed by patterning is etched to form a plurality of conical protrusions on the first substrate. A probe array in which the height of the part is controlled to be constant in the intermediate layer can be manufactured.
[0189]
In another probe array manufacturing method according to the present invention, a patterning material is formed on a surface of a low concentration layer, the patterning material is patterned, and the low concentration layer exposed by patterning is etched to form a first Since a plurality of conical protrusions are formed on the substrate, it is possible to manufacture a probe array in which the height of each protrusion is controlled to be constant with a patterning material.
[0190]
In another probe array manufacturing method according to the present invention, a patterning material is formed on the surface of an n-type Si layer, the patterning material is patterned, and the n-type Si layer exposed by patterning is etched first. Since a plurality of conical projections are formed on the substrate, a probe array in which the height of each projection is controlled to be constant by the height of the patterning material can be manufactured.
[0191]
In another probe array manufacturing method according to the present invention, a patterning material is formed on the surface of a high-concentration p-type Si layer, the patterning material is patterned, and the high-concentration p-type Si layer exposed by patterning is formed. Since a plurality of conical protrusions are formed on the first substrate by etching, a probe array in which the height of each protrusion is controlled to be constant by the height of the patterning material can be manufactured.
[Brief description of the drawings]
1A is a plan view of a probe array to which the present invention is applied, and FIG. 1B is a cross-sectional view of the probe array to which the present invention is applied.
FIG. 2 is a cross-sectional view showing a Si protrusion provided in a probe array to which the present invention is applied.
FIG. 3 is a cross-sectional view of an SOI substrate prepared when manufacturing a probe array to which the present invention is applied.
FIG. 4 is a cross-sectional view for explaining that an SOI substrate and a glass substrate are anode-connected when a probe array to which the present invention is applied is manufactured.
FIG. 5 shows an example of a method for manufacturing a probe array to which the present invention is applied. ₂ It is sectional drawing for demonstrating patterning with respect to a layer.
FIG. 6 is a cross-sectional view for explaining that a Si protrusion and a bank are manufactured by etching an SOI wafer when manufacturing a probe array to which the present invention is applied.
FIG. 7 is a side view showing a manufacturing process when an Si wafer is formed by etching an SOI wafer when manufacturing a probe array to which the present invention is applied, and FIG. (B) is the shape of the active layer after 360 seconds from the start of etching, (c) is the shape of the active layer after 540 seconds from the start of etching, and (d) is 750 seconds from the start of etching. The shape of the active layer after progress is shown.
FIG. 8 is a cross-sectional view for explaining that a metal layer is formed on an SOI wafer and a glass substrate when a probe array to which the present invention is applied is manufactured.
FIG. 9 is a cross-sectional view of a probe array to which the present invention is applied.
FIG. 10 is a side view when forming an Si protrusion having a plurality of slopes by etching an SOI wafer when manufacturing a probe array to which the present invention is applied; FIG. (B) is the shape of the active layer after 150 sec from the start of etching, (c) is the shape of the active layer after 405 sec from the start of etching, and (d) is 483 sec after the start of etching. The shape of the active layer after progress is shown.
11A shows the relationship between the core diameter of the optical fiber probe and the equivalent refractive index, and FIG. 11B shows the relationship between the core diameter of the optical fiber probe and the spot diameter.
FIG. 12 is a diagram showing the relationship between the detection position of the optical fiber probe and the electric field intensity.
FIG. 13 is a diagram showing the relationship between the core diameter of the optical fiber probe, the electric field strength, and the spot diameter.
FIG. 14 is a process diagram showing another example when producing a probe array or a single probe to which the present invention is applied.
15A is a view showing a measuring device for measuring the light efficiency of a probe array to which the present invention is applied, and FIG. 15B is a drawing showing a measuring device for measuring the light efficiency of an optical fiber probe. FIG.
FIG. 16 shows the relationship between the detection position of near-field light generated by the optical fiber probe and the light intensity by a solid line A, and shows the relationship between the detection position of light detected by the probe array to which the present invention is applied and the light intensity by a dotted line. FIG.
FIGS. 17A and 17B are diagrams illustrating a method of manufacturing a probe array using GaP, in which FIG. 17A illustrates bonding a single crystal GaP wafer to a single crystal Si wafer, and FIG. It is a figure which shows joining a crystalline GaP wafer, (c) is a figure which shows removing a single crystal Si wafer, (d) is SiO ₂ It is a figure which shows forming a pattern on a single crystal GaP wafer, (e) is a figure which shows forming a GaP projection part, (f) is SiO ₂ It is a figure which shows removing a pattern, (g) is a figure which shows forming a metal layer.
18A and 18B are diagrams showing a method of manufacturing a probe array using a Si wafer other than an SOI substrate, wherein FIG. 18A is a diagram showing a substrate in which an n-type Si layer is formed on a p-type Si layer; (b) is a diagram showing anodic bonding so that the glass substrate and the surface of the n-type Si layer are in contact with each other, (c) is a diagram showing etching after removing the p-type Si layer, d) is a diagram showing that a pattern forming layer is formed on the surface of the n-type Si layer, (e) is a diagram showing that a pattern is formed on the n-type Si layer, and (f) is a diagram showing etching. (G) is a diagram showing removal of a pattern remaining on the Si projection, and (h) shows that a metal layer is formed on the glass substrate. FIG.
FIG. 19 is a diagram showing an etching apparatus for realizing electrochemical etching.
FIG. 20 is a view for explaining still another example when manufacturing a probe array to which the present invention is applied, and (a) shows a substrate in which a low concentration Si layer is formed on a high concentration Si layer. It is a figure which shows anodic bonding so that a glass substrate and the surface of a low concentration Si layer may touch, and (c) shows performing etching after removing a high concentration Si layer. (D) is a figure showing forming a pattern formation layer on the surface of a low concentration Si layer, (e) is a figure showing forming a pattern on a low concentration Si layer, (f) is a figure which shows forming Si protrusion part by etching, (g) is a figure which shows removing a pattern, (h) is a figure which shows forming a metal layer. .
FIG. 21 is a view for explaining still another example when manufacturing a probe array to which the present invention is applied, in which FIG. 21A is a substrate in which a high-concentration p-type Si layer is formed on an n-type Si layer; (B) is a diagram showing anodic bonding so that the glass substrate and the surface of the high-concentration p-type Si layer are in contact with each other, and (c) is an etching process after removing the n-type Si layer. (D) is a diagram showing that a pattern forming layer is formed on the surface of the high-concentration p-type Si layer, and (e) is a diagram showing that a pattern is formed on the high-concentration p-type Si layer. (F) is a diagram showing that a Si protrusion is formed, (g) is a diagram showing that a pattern is removed, and (h) is that a metal layer is formed. FIG.
22A and 22B are diagrams showing another example of a probe array to which the present invention is applied, in which FIG. 22A is a plan view and FIG. 22B is a side view.
FIG. 23 is a side view showing another example of a probe array to which the present invention is applied.
24A and 24B are diagrams showing another example of a probe array to which the present invention is applied, in which FIG. 24A is a plan view and FIG. 24B is a side view.
25 is a diagram showing the relationship between the mark length when recording on the optical disk by the probe array shown in FIG. 24 and the CN ratio when reproducing.
26A and 26B are diagrams showing another example of a probe array to which the present invention is applied, in which FIG. 26A is a plan view and FIG. 26B is a side view.
FIG. 27 is a block diagram showing a jump amount measuring apparatus for measuring the jump amount of the probe array.
FIG. 28 is a diagram showing the jump amount of the probe array to which the present invention shown in FIGS. 24 and 25 is applied.
FIG. 29 is a cross-sectional view of a concave array used when a conventional probe array is manufactured.
FIG. 30 is a cross-sectional view of a concave array used when a conventional probe array is manufactured.
[Explanation of symbols]
1 probe array, 2 glass substrate, 3 Si protrusion, 10 SOI substrate, 11 SOI wafer, 12 SiO ₂ Layer, 13 Si support substrate, 14 glass substrate

Claims (148)

A first substrate having optical transparency, a high refractive index layer having a refractive index higher than that of the first substrate, an intermediate layer laminated on the high refractive index layer, and a support layer laminated on the intermediate layer A second substrate comprising: the first substrate and the high refractive index layer in contact with each other; and
Removing the support layer contained in the second substrate,
Patterning the intermediate layer exposed by removing the support layer,
Etching the high refractive index layer exposed by patterning to form a cone-shaped protrusion on the first substrate,
A method of manufacturing a probe, comprising: removing a patterned intermediate layer; and manufacturing a probe having a conical protrusion formed of a high refractive index layer on a first substrate. The second substrate, the high refractive index layer is a Si, the production method according to claim 1, wherein the probe said intermediate layer being a SiO _2. The second substrate, the high refractive index layer is a GaP layer, the manufacturing method according to claim 1, wherein the probe said intermediate layer being a SiO _2. 2. The probe manufacturing method according to claim 1, wherein the high refractive index layer is a single crystal material, the intermediate layer is SiO ₂ , and the support substrate is Si. Method. 2. The probe manufacturing method according to claim 1, wherein the high refractive index layer is monocrystalline Si, the intermediate layer is SiO ₂ , and the support layer is Si. Method.   2. The method of manufacturing a probe according to claim 1, wherein when the etching is performed, the protrusion is formed on the outer wall so as to have a plurality of taper angles.   The probe manufacturing method according to claim 1, further comprising: forming a bank portion having a height equal to a height of the protruding portion and arranged at a position surrounding the periphery of the protruding portion when performing the etching. .   2. The probe according to claim 1, wherein the same high refractive index layer is etched to further form a bank portion made of the same material as that of the protrusion and disposed at a position surrounding the periphery of the protrusion. Manufacturing method. A method of manufacturing a probe in which a rotary recording medium for recording information is arranged on the tip side of the protrusion,
When performing the etching, it is further characterized in that a bank portion is provided which is disposed at a position surrounding the periphery of the protrusion and has an opening on the outflow side of the air flow generated when the rotary recording medium rotates. The method of manufacturing a probe according to claim 1.   When performing the etching, a tapered portion that is inclined from the rotary recording medium entry side of the first substrate toward the rotary recording medium exit side of the first substrate is formed at the end of the rotary recording medium exit side. The probe manufacturing method according to claim 9, wherein the bank portion is formed.   When performing the etching, the bank on the rotary recording medium entry side has a tapered portion inclined from the rotary recording medium entry side of the first substrate toward the rotary recording medium exit side of the first substrate. The probe manufacturing method according to claim 9, wherein a bank portion is formed.   10. The probe according to claim 9, wherein when performing the etching, a bank portion having a tapered portion inclined in the radial direction of the rotary recording medium is formed in a bank substantially parallel to the direction in which the rotary recording medium enters. Production method.   A first substrate is used in which the length of the end of the substrate on the exit side of the rotary recording medium and the tip of the protrusion is determined based on the thickness, the refractive index, and the numerical aperture of the optical element through which light enters. The probe manufacturing method according to claim 9. A method of manufacturing a probe in which a rotary recording medium for recording information is arranged on the tip side of the protrusion,
The same high refractive index layer is etched so that the protrusion, the bank disposed around the protrusion, and the pad contacting the rotary recording medium are rotated by the first substrate. 2. The method of manufacturing a probe according to claim 1, wherein the probe is formed on a surface facing the mold recording medium.   When performing the etching, the center position between the entry end of the rotary recording medium and the exit end of the rotary recording medium of the first substrate, or ± 0. The probe manufacturing method according to claim 14, wherein the pad portion is formed at a position within a range of one.   2. The method of manufacturing a probe according to claim 1, wherein after the intermediate layer is removed, a light-shielding film is formed only on the protrusion and the protrusion formation surface of the substrate, or only on the protrusion.   2. The method of manufacturing a probe according to claim 1, wherein after the intermediate layer is removed, a light shielding film is formed only on the inclined surface of the protruding portion and the protruding portion forming surface of the substrate or the inclined surface of the protruding portion.   When patterning the intermediate layer, the intermediate layer on the tip position of the protrusion to be manufactured has a predetermined thickness, and the intermediate layer other than on the tip position of the protrusion has a predetermined thickness or less. The method for producing a probe according to claim 1. A first substrate having light transparency, a support layer, an intermediate layer formed on the support layer, and a second substrate formed on the intermediate layer and having a higher refractive index than the first substrate. And bonding the first substrate and the GaP layer in contact with each other,
Removing the support layer contained in the second substrate,
Patterning the intermediate layer exposed by removing the support layer,
Etching the GaP layer exposed by patterning to form a cone-shaped protrusion on the first substrate,
Manufacturing the probe, wherein the patterned intermediate layer is removed, and a probe having a conical protrusion made of a GaP layer having a refractive index higher than that of the first substrate is formed on the first substrate. Method.   20. The method for manufacturing a probe according to claim 19, wherein when performing the etching, the protrusion is formed so as to have a plurality of taper angles on the outer wall.   20. The method of manufacturing a probe according to claim 19, further comprising forming a bank portion having a height the same as a height of the protruding portion and disposed at a position surrounding the periphery of the protruding portion when performing the etching. .   20. The probe manufacturing method according to claim 19, wherein the same GaP layer is etched to further form a bank portion made of the same material as the protruding portion and disposed at a position surrounding the protruding portion. Method. A method of manufacturing a probe in which a rotary recording medium for recording information is arranged on the tip side of the protrusion,
When performing the etching, it is further characterized in that a bank portion is provided which is disposed at a position surrounding the periphery of the protruding portion and provided with an opening on the outflow side of the air flow generated when the rotary recording medium rotates. The method of manufacturing a probe according to claim 19.   When performing the etching, a tapered portion that is inclined from the rotary recording medium entry side of the first substrate toward the rotary recording medium exit side of the first substrate is formed at the end of the rotary recording medium exit side. The probe manufacturing method according to claim 23, wherein a bank portion is formed.   When performing the etching, the bank on the rotary recording medium entry side has a tapered portion inclined from the rotary recording medium entry side of the first substrate toward the rotary recording medium exit side of the first substrate. The probe manufacturing method according to claim 23, wherein a bank portion is formed.   24. The probe according to claim 23, wherein when performing the etching, a bank portion having a tapered portion inclined in the radial direction of the rotary recording medium is formed in a bank substantially parallel to the direction in which the rotary recording medium enters. Production method.   A first substrate is used in which the length of the end of the substrate on the exit side of the rotary recording medium and the tip of the protrusion is determined based on the thickness, the refractive index, and the numerical aperture of the optical element through which light enters. The method for manufacturing a probe according to claim 23. A method of manufacturing a probe in which a rotary recording medium for recording information is arranged on the tip side of the protrusion,
The same GaP layer is etched, and the protrusion, the bank portion disposed around the protrusion, and the pad portion in contact with the rotary recording medium are connected to the rotary recording medium of the first substrate. The method of manufacturing a probe according to claim 19, wherein the probe is formed on a medium facing surface.   When performing the etching, the center position between the entry end of the rotary recording medium and the exit end of the rotary recording medium of the first substrate, or ± 0. 29. The probe manufacturing method according to claim 28, wherein the pad portion is formed at a position within a range of one.   20. The probe manufacturing method according to claim 19, wherein after the intermediate layer is removed, a light shielding film is formed only on the protrusion and the protrusion formation surface of the substrate, or only on the protrusion.   20. The method of manufacturing a probe according to claim 19, wherein after the intermediate layer is removed, a light shielding film is formed only on the inclined surface of the protruding portion and the protruding portion forming surface of the substrate or the inclined surface of the protruding portion.   When patterning the intermediate layer, the intermediate layer on the tip position of the protrusion to be manufactured has a predetermined thickness, and the intermediate layer other than on the tip position of the protrusion has a predetermined thickness or less. The method for producing a probe according to claim 19. A first substrate having optical transparency, a low concentration layer having a refractive index higher than that of the first substrate and mixed with a predetermined amount of impurities, and a high concentration layer mixed with impurities larger than the predetermined amount of impurities. A second substrate is bonded to the first substrate by contacting the low-concentration layer;
Removing the high concentration layer contained in the second substrate;
A patterning material is formed on the surface of the low concentration layer exposed by removing the high concentration layer, the patterning material is patterned, and the low concentration layer exposed by patterning is etched to form a pattern on the first substrate. A conical protrusion is formed on the
A method for producing a probe, comprising: removing a patterned material for patterning, and producing a probe having a conical projection formed of a low-concentration layer on a first substrate.   34. The method of manufacturing a probe according to claim 33, wherein when performing the etching, the protrusion is formed so as to have a plurality of taper angles on the outer wall.   34. The method of manufacturing a probe according to claim 33, further comprising forming a bank portion having a height equal to a height of the protruding portion and disposed at a position surrounding the periphery of the protruding portion when performing the etching. .   34. The probe according to claim 33, wherein the same low concentration layer is etched to further form a bank portion made of the same material as the protrusion and disposed at a position surrounding the periphery of the protrusion. Production method. A method of manufacturing a probe in which a rotary recording medium for recording information is arranged on the tip side of the protrusion,
When performing the etching, it is further characterized in that a bank portion is provided which is disposed at a position surrounding the periphery of the protruding portion and provided with an opening on the outflow side of the air flow generated when the rotary recording medium rotates. A method for manufacturing a probe according to claim 33.   When performing the etching, a tapered portion that is inclined from the rotary recording medium entry side of the first substrate toward the rotary recording medium exit side of the first substrate is formed at the end of the rotary recording medium exit side. 38. The method of manufacturing a probe according to claim 37, wherein the bank portion is formed.   When performing the etching, the bank on the rotary recording medium entry side has a tapered portion inclined from the rotary recording medium entry side of the first substrate toward the rotary recording medium exit side of the first substrate. 38. The probe manufacturing method according to claim 37, wherein a bank portion is formed.   38. The probe according to claim 37, wherein when performing the etching, a bank portion having a tapered portion inclined in the radial direction of the rotary recording medium is formed in a bank substantially parallel to the direction in which the rotary recording medium enters. Production method.   A first substrate is used in which the length of the end of the substrate on the exit side of the rotary recording medium and the tip of the protrusion is determined based on the thickness, the refractive index, and the numerical aperture of the optical element through which light enters. 38. The method of manufacturing a probe according to claim 37. A method of manufacturing a probe in which a rotary recording medium for recording information is arranged on the tip side of the protrusion,
Etching is performed on the same low-concentration layer so that the protrusion, the bank disposed around the periphery of the protrusion, and the pad that is in contact with the rotary recording medium are rotated on the first substrate. 34. The method of manufacturing a probe according to claim 33, wherein the probe is formed on a recording medium facing surface.   When performing the etching, the center position between the entry end of the rotary recording medium and the exit end of the rotary recording medium of the first substrate, or ± 0. 43. The probe manufacturing method according to claim 42, wherein the pad portion is formed at a position within a range of one.   34. The probe manufacturing method according to claim 33, wherein after the patterning material is removed, a light shielding film is formed only on the protrusion and the protrusion formation surface of the substrate, or only on the protrusion.   34. The probe manufacturing method according to claim 33, wherein after the patterning material is removed, a light shielding film is formed only on the inclined surface of the protruding portion and the protruding portion forming surface of the substrate, or only on the inclined surface of the protruding portion. .   34. The method according to claim 33, wherein, when forming the patterning material, a thickness on a tip position of a projection to be manufactured is set to a predetermined thickness, and a thickness other than on the tip position of the projection is set to a predetermined thickness or less. Probe manufacturing method. A first substrate having light transmissivity, and a second substrate comprising an n-type Si layer and a p-type Si layer having a higher refractive index than the first substrate, and the first substrate and the n-type Si. The layers are brought into contact and bonded,
Removing the p-type Si layer contained in the second substrate;
Forming a patterning material on the surface of the n-type Si layer exposed by removing the p-type Si layer, and patterning the patterning material;
Etching the n-type Si layer exposed by patterning to form a cone-shaped protrusion on the first substrate,
A method for producing a probe, comprising: removing a patterned material for patterning, and producing a probe having a cone-shaped protrusion formed of an n-type Si layer on a first substrate.   48. The method of manufacturing a probe according to claim 47, wherein, when performing the etching, a protrusion is formed on the outer wall so as to have a plurality of taper angles.   48. The probe manufacturing method according to claim 47, wherein, when performing the etching, a bank portion having the same height as the protrusion portion and disposed at a position surrounding the periphery of the protrusion portion is further formed. Method.   48. The probe according to claim 47, wherein the same n-type Si layer is etched to further form a bank portion made of the same material as the protrusion and disposed around the periphery of the protrusion. Manufacturing method. A method of manufacturing a probe in which a rotary recording medium for recording information is arranged on the tip side of the protrusion,
When performing the etching, it is further characterized in that a bank portion is provided which is disposed at a position surrounding the periphery of the protrusion and has an opening on the outflow side of the air flow generated when the rotary recording medium rotates. 48. A method of manufacturing a probe according to claim 47.   When performing the etching, a tapered portion that is inclined from the rotary recording medium entry side of the first substrate toward the rotary recording medium exit side of the first substrate is formed at the end of the rotary recording medium exit side. 52. The method of manufacturing a probe according to claim 51, wherein the bank portion is formed.   When performing the etching, the bank on the rotary recording medium entry side has a tapered portion inclined from the rotary recording medium entry side of the first substrate toward the rotary recording medium exit side of the first substrate. 52. The method of manufacturing a probe according to claim 51, wherein a bank portion is formed.   52. The probe according to claim 51, wherein when performing the etching, a bank portion having a tapered portion inclined in the radial direction of the rotary recording medium is formed in a bank substantially parallel to the direction in which the rotary recording medium enters. Production method.   A first substrate is used in which the length of the end of the substrate on the exit side of the rotary recording medium and the tip of the protrusion is determined based on the thickness, the refractive index, and the numerical aperture of the optical element through which light enters. 52. The probe manufacturing method according to claim 51, wherein: A method of manufacturing a probe in which a rotary recording medium for recording information is arranged on the tip side of the protrusion,
The same n-type Si layer is etched to rotate the first substrate so that the protrusion, the bank disposed around the protrusion, and the pad in contact with the rotary recording medium are rotated. 48. The method of manufacturing a probe according to claim 47, wherein the probe is formed on a surface facing the mold recording medium.   When performing the etching, the center position between the entry end of the rotary recording medium and the exit end of the rotary recording medium of the first substrate, or ± 0. 57. The probe manufacturing method according to claim 56, wherein the pad portion is formed at a position within a range of one.   48. The probe manufacturing method according to claim 47, wherein after the patterning material is removed, a light shielding film is formed only on the protrusion and the protrusion formation surface of the substrate, or only on the protrusion.   48. The light-shielding film is formed only on the inclined surface of the protruding portion and the protruding portion forming surface of the first substrate, or the inclined surface of the protruding portion after removing the patterning material. Probe manufacturing method.   48. The method according to claim 47, wherein when the patterning material is formed, a thickness on a tip position of a projection to be manufactured is set to a predetermined thickness, and a thickness other than on the tip position of the projection is set to a predetermined thickness or less. Probe manufacturing method. A first substrate having light transmissivity, and a second substrate comprising a high-concentration p-type Si layer and an n-type Si layer having a refractive index higher than that of the first substrate, and the first substrate and the high substrate. The p-type Si layer is contacted and bonded,
Removing the n-type Si layer contained in the second substrate;
Forming a patterning material on the surface of the high-concentration p-type Si layer exposed by removing the n-type Si layer, and patterning the patterning material;
Etching the high-concentration p-type Si layer exposed by patterning to form a cone-shaped protrusion on the first substrate;
A method for manufacturing a probe, comprising: removing a patterned material for patterning; and producing a probe having a cone-shaped protrusion made of the high-concentration p-type Si layer on a first substrate.   62. The method of manufacturing a probe according to claim 61, wherein when performing the etching, the protrusion is formed so as to have a plurality of taper angles on the outer wall.   62. The method of manufacturing a probe according to claim 61, further comprising forming a bank portion having a height the same as a height of the protruding portion and disposed at a position surrounding the periphery of the protruding portion when performing the etching. .   62. The same high-concentration p-type Si layer is etched to further form a bank portion made of the same material as that of the protruding portion and disposed at a position surrounding the periphery of the protruding portion. Manufacturing method of the probe.   A method of manufacturing a probe in which a rotary recording medium for recording information is disposed on a tip side of the protrusion, wherein the rotary recording medium is disposed at a position surrounding the periphery of the protrusion when performing the etching. 62. The method of manufacturing a probe according to claim 61, further comprising forming a bank portion provided with an opening on an outflow side of an air flow generated by the rotation of the medium.   When performing the etching, a tapered portion that is inclined from the rotary recording medium entry side of the first substrate toward the rotary recording medium exit side of the first substrate is formed at the end of the rotary recording medium exit side. 66. The method of manufacturing a probe according to claim 65, wherein the bank portion is formed.   When performing the etching, the bank on the rotary recording medium entry side has a tapered portion inclined from the rotary recording medium entry side of the first substrate toward the rotary recording medium exit side of the first substrate. The probe manufacturing method according to claim 65, wherein a bank portion is formed.   66. The probe according to claim 65, wherein when performing the etching, a bank portion having a tapered portion inclined in the radial direction of the rotary recording medium is formed in a bank substantially parallel to the direction in which the rotary recording medium enters. Production method.   66. The probe according to claim 65, wherein the first substrate is used in which a length in a traveling direction of the rotary recording medium is determined based on a thickness, a refractive index, and a numerical aperture of an optical element to which light is incident. Production method. A method of manufacturing a probe in which a rotary recording medium for recording information is arranged on the tip side of the protrusion,
Etching is performed on the same high-concentration p-type Si layer, and the first substrate includes the protrusion, the bank portion disposed at a position surrounding the periphery of the protrusion, and the pad portion in contact with the rotary recording medium. 62. The method of manufacturing a probe according to claim 61, wherein the probe is formed on a surface facing the rotary recording medium.   When performing the etching, the center position between the entry end of the rotary recording medium and the exit end of the rotary recording medium of the first substrate, or ± 0. The probe manufacturing method according to claim 70, wherein the pad portion is formed at a position within a range of one.   62. The method of manufacturing a probe according to claim 61, wherein after the patterning material is removed, a light-shielding film is formed only on the protrusion and the protrusion formation surface of the substrate, or only on the protrusion.   62. The probe manufacturing method according to claim 61, wherein after the patterning material is removed, a light shielding film is formed only on the inclined surface of the protrusion and the protrusion-forming surface of the substrate, or only on the inclined surface of the protrusion. .   62. The method according to claim 61, wherein when the patterning material is formed, a thickness on a tip position of a protrusion to be manufactured is set to a predetermined thickness, and a thickness other than on the tip position of the protrusion is set to a predetermined thickness or less. Probe manufacturing method. A first substrate having optical transparency, a high refractive index layer having a refractive index higher than that of the first substrate, an intermediate layer laminated on the high refractive index layer, and a support layer laminated on the intermediate layer A second substrate comprising: the first substrate and the high refractive index layer in contact with each other; and
Removing the support layer contained in the second substrate,
Patterning the intermediate layer exposed by removing the support layer,
Etching the high refractive index layer exposed by patterning to form a plurality of conical protrusions on the first substrate;
A method for producing a probe array, comprising: removing the patterned intermediate layer; and producing a probe array having a plurality of conical protrusions made of a high refractive index layer on a first substrate. The second substrate is the above-described high refractive index layer is Si, the manufacturing method of the probe array of claim 75 wherein said intermediate layer is a SiO _2. The second substrate, the high refractive index layer is a GaP layer, the manufacturing method of the probe array of claim 75 wherein said intermediate layer is a SiO _2. The second substrate, the high refractive index layer is a single crystal material, the intermediate layer is a SiO _2, of the probe array according to claim 75 wherein said support layer is a Si Production method. The second substrate, the high refractive index layer is a single crystal Si, the intermediate layer is a SiO _2, of the probe array according to claim 75 wherein said support layer is a Si Production method.   76. The method of manufacturing a probe array according to claim 75, wherein each of the protrusions is formed on the outer wall so as to have a plurality of taper angles when performing the etching.   76. The probe array according to claim 75, wherein when performing the etching, a bank portion having the same height as each of the protrusions and disposed at a position surrounding the periphery of each of the protrusions is further formed. Manufacturing method.   76. The same high refractive index layer is etched to further form a bank portion made of the same material as each of the protrusions and disposed at a position surrounding the periphery of the protrusions. Manufacturing method of the probe array. A method of manufacturing a probe array in which a rotary recording medium for recording information is arranged on the tip side of each of the protrusions,
When performing the etching, a bank portion is further formed which is disposed at a position surrounding the periphery of each of the protrusions and has an opening on the outflow side of the air flow generated when the rotary recording medium rotates. The method of manufacturing a probe array according to claim 75.   When performing the etching, a tapered portion that is inclined from the rotary recording medium entry side of the first substrate toward the rotary recording medium exit side of the first substrate is formed at the end of the rotary recording medium exit side. 84. The probe array manufacturing method according to claim 83, wherein a bank portion is formed.   When performing the etching, the bank on the rotary recording medium entry side has a tapered portion inclined from the rotary recording medium entry side of the first substrate toward the rotary recording medium exit side of the first substrate. 84. The probe array manufacturing method according to claim 83, wherein a bank portion is formed.   84. The probe array according to claim 83, wherein when performing the etching, a bank portion having a tapered portion inclined in the radial direction of the rotary recording medium is formed in a bank substantially parallel to the direction in which the rotary recording medium enters. Manufacturing method.   84. The probe array according to claim 83, wherein the first substrate is used in which a length in a traveling direction of the rotary recording medium is determined based on a thickness, a refractive index, and a numerical aperture of an optical element that receives light. Manufacturing method. A method of manufacturing a probe array in which a rotary recording medium for recording information is arranged on the tip side of each of the protrusions,
The same high-refractive index layer etching is performed so that each of the protrusions, the bank portion disposed at a position surrounding the periphery of the protrusions, and the pad portion in contact with the rotary recording medium are formed on the first substrate. 76. The method of manufacturing a probe array according to claim 75, wherein the probe array is formed on a surface facing the rotary recording medium.   When performing the etching, the center position between the entry end of the rotary recording medium and the exit end of the rotary recording medium of the first substrate, or ± 0. 90. The probe array manufacturing method according to claim 88, wherein the pad portion is formed at a position within a range of one.   76. The method of manufacturing a probe array according to claim 75, wherein after the intermediate layer is removed, a light shielding film is formed only on each of the protrusions and the protrusion forming surface of the substrate, or on each of the protrusions.   76. The probe array according to claim 75, wherein after the intermediate layer is removed, a light shielding film is formed only on the inclined surface of each protrusion and the protrusion forming surface of the substrate, or only on the inclined surface of each protrusion. Manufacturing method.   When patterning the intermediate layer, the intermediate layer on the tip position of each protrusion to be manufactured has a predetermined thickness, and the intermediate layer other than on the tip position of each protrusion has a predetermined thickness or less. 76. A method of manufacturing a probe array according to claim 75. A first substrate having light transparency, a support layer, an intermediate layer formed on the support layer, and a second substrate formed on the intermediate layer and having a higher refractive index than the first substrate. And bonding the first substrate and the GaP layer in contact with each other,
Removing the support layer contained in the second substrate,
Patterning the intermediate layer exposed by removing the support layer,
Etching the GaP layer exposed by patterning to form a plurality of conical protrusions on the first substrate,
A probe array comprising a plurality of conical protrusions made of a GaP layer having a higher refractive index than the first substrate on the first substrate by removing the patterned intermediate layer. Array manufacturing method.   94. The probe array manufacturing method according to claim 93, wherein, when performing the etching, the protrusions are formed so as to have a plurality of taper angles on an outer wall.   94. The probe according to claim 93, further comprising a bank portion disposed at a position surrounding the periphery of each of the protrusions when performing the etching. Array manufacturing method.   95. The probe according to claim 93, wherein the same GaP layer is etched to further form a bank portion made of the same material as each of the protrusions and disposed at a position surrounding the periphery of the protrusions. Array manufacturing method. A method of manufacturing a probe array in which a rotary recording medium for recording information is arranged on the tip side of each of the protrusions,
When performing the etching, a bank portion is further formed which is disposed at a position surrounding the periphery of each of the protrusions and has an opening on the outflow side of the air flow generated when the rotary recording medium rotates. 94. A method of manufacturing a probe array according to claim 93.   When performing the etching, a tapered portion that is inclined from the rotary recording medium entry side of the first substrate toward the rotary recording medium exit side of the first substrate is formed at the end of the rotary recording medium exit side. 98. The method of manufacturing a probe array according to claim 97, wherein a bank portion is formed.   When performing the etching, the bank on the rotary recording medium entry side has a tapered portion inclined from the rotary recording medium entry side of the first substrate toward the rotary recording medium exit side of the first substrate. 98. The probe array manufacturing method according to claim 97, wherein a bank portion is formed.   98. The probe array according to claim 97, wherein, when performing the etching, a bank portion having a tapered portion inclined in the radial direction of the rotary recording medium is formed in a bank substantially parallel to the direction in which the rotary recording medium enters. Manufacturing method.   98. The probe according to claim 97, wherein the first substrate is used in which a length in a traveling direction of the rotary recording medium is determined based on a thickness, a refractive index, and a numerical aperture of an optical element to which light is incident. Production method. A method of manufacturing a probe array in which a rotary recording medium for recording information is arranged on the tip side of each of the protrusions,
The same GaP layer is etched so that the projections, the bank portions arranged at positions surrounding the projections, and the pad portions in contact with the rotary recording medium are rotated by the first substrate. 94. The method of manufacturing a probe array according to claim 93, wherein the probe array is formed on a surface facing the mold recording medium.   When performing the etching, the center position between the entry end of the rotary recording medium and the exit end of the rotary recording medium of the first substrate, or ± 0. 103. The probe array manufacturing method according to claim 102, wherein the pad portion is formed at a position within a range of one.   94. The method of manufacturing a probe array according to claim 93, wherein after the intermediate layer is removed, a light-shielding film is formed only on the protrusions and the protrusion-forming surface of the substrate, or only on the protrusions.   94. The probe array according to claim 93, wherein after the intermediate layer is removed, a light-shielding film is formed only on the inclined surface of each protrusion and the protrusion forming surface of the substrate, or only on the inclined surface of each protrusion. Manufacturing method.   When patterning the intermediate layer, the intermediate layer on the tip position of each protrusion to be manufactured has a predetermined thickness, and the intermediate layer other than on the tip position of each protrusion has a thickness not more than a predetermined thickness. 94. The method of manufacturing a probe array according to claim 93. A first substrate having light transparency, a low concentration layer having a higher refractive index than the first substrate and mixed with a predetermined amount of impurities, and a high concentration layer mixed with more impurities than the predetermined amount of impurities. A second substrate is bonded to the first substrate by contacting the low-concentration layer;
Removing the high concentration layer contained in the second substrate;
Patterning the patterning material by forming a patterning material on the surface of the low-concentration layer exposed by removing the high-concentration layer;
Etching the low-concentration layer exposed by patterning to form a plurality of conical protrusions on the first substrate;
A method for producing a probe array, comprising: removing the patterned patterning material; and producing a probe array having a plurality of conical projections made of a low concentration layer on a first substrate. 108. The method of manufacturing a probe array according to claim 107, wherein, when performing the etching, the protrusions are formed so as to have a plurality of taper angles on an outer wall. 108. The probe according to claim 107, further comprising: forming a bank portion having a height that is the same as the height of each of the protrusions and arranged around the periphery of each of the protrusions when performing the etching. Array manufacturing method.   108. The method according to claim 107, further comprising the step of etching the same low concentration layer to further form a bank portion made of the same material as each of the protrusions and disposed at a position surrounding the periphery of each of the protrusions. A method for manufacturing a probe array. A method of manufacturing a probe array in which a rotary recording medium for recording information is arranged on the tip side of each of the protrusions,
When performing the etching, a bank portion is further formed which is disposed at a position surrounding the periphery of each of the protrusions and has an opening on the outflow side of the air flow generated when the rotary recording medium rotates. 108. A method of manufacturing a probe array according to claim 107.   When performing the etching, a tapered portion that is inclined from the rotary recording medium entry side of the first substrate toward the rotary recording medium exit side of the first substrate is formed at the end of the rotary recording medium exit side. 112. The probe array manufacturing method according to claim 111, wherein a bank portion is formed.   When performing the etching, the bank on the rotary recording medium entry side has a tapered portion inclined from the rotary recording medium entry side of the first substrate toward the rotary recording medium exit side of the first substrate. 112. The probe array manufacturing method according to claim 111, wherein a bank portion is formed.   112. The probe array according to claim 111, wherein when performing the etching, a bank portion having a tapered portion inclined in the radial direction of the rotary recording medium is formed in a bank substantially parallel to the direction in which the rotary recording medium enters. Manufacturing method. The probe according to claim 111, wherein the first substrate is used in which a length in a traveling direction of the rotary recording medium is determined based on a thickness, a refractive index, and a numerical aperture of an optical element that receives light. Production method. A method of manufacturing a probe array in which a rotary recording medium for recording information is arranged on the tip side of each of the protrusions,
Etching is performed on the same low-concentration layer so that each of the protrusions, a bank portion disposed at a position surrounding the periphery of the protrusions, and a pad portion in contact with the rotary recording medium are formed on the first substrate. 108. The method of manufacturing a probe array according to claim 107, wherein the probe array is formed on a surface facing the rotary recording medium.   When performing the etching, the center position between the entry end of the rotary recording medium and the exit end of the rotary recording medium of the first substrate, or ± 0. 117. The probe array manufacturing method according to claim 116, wherein the pad portion is formed at a position within a range of one. 108. The method of manufacturing a probe array according to claim 107, wherein after the patterning material is removed, a light-shielding film is formed only on the protrusions and the protrusion-forming surfaces of the substrate, or only on the protrusions.   108. The probe according to claim 107, wherein after the patterning material is removed, a light shielding film is formed only on the inclined surface of each protrusion and the protrusion forming surface of the substrate, or only on the inclined surface of each protrusion. Array manufacturing method.   When forming the patterning material, a predetermined thickness is formed on the tip position of each of the projections to be manufactured, and a thickness other than the tip position of each of the projection parts is set to a predetermined thickness or less. 108. A method for producing a probe array according to Item 107. A first substrate having light transmissivity, and a second substrate comprising an n-type Si layer and a p-type Si layer having a higher refractive index than the first substrate, and the first substrate and the n-type Si. Bonding the layers together, removing the p-type Si layer contained in the second substrate,
Forming a patterning material on the surface of the n-type Si layer exposed by removing the p-type Si layer, and patterning the patterning material;
Etching the n-type Si layer exposed by patterning to form a plurality of conical protrusions on the first substrate,
A method for producing a probe array, comprising: removing the patterned patterning material; and producing a probe array having a plurality of conical protrusions made of an n-type Si layer on a first substrate.   122. The method of manufacturing a probe array according to claim 121, wherein, when performing the etching, the protrusions are formed so as to have a plurality of taper angles on an outer wall.   122. The probe according to claim 121, wherein when performing the etching, a bank portion having the same height as each of the protrusions and disposed at a position surrounding the periphery of the protrusions is further formed. Array manufacturing method.   122. Etching is performed on the same n-type Si layer to further form a bank portion made of the same material as each of the protrusions and disposed at a position surrounding the periphery of each of the protrusions. Manufacturing method of the probe array. A method of manufacturing a probe array in which a rotary recording medium for recording information is arranged on the tip side of each of the protrusions,
When performing the etching, a bank portion is further formed which is disposed at a position surrounding the periphery of each of the protrusions and has an opening on the outflow side of the air flow generated when the rotary recording medium rotates. 122. A method of manufacturing a probe array according to claim 121.   When performing the etching, a taper portion inclined from the rotary recording medium entry side of the first substrate toward the rotary recording medium exit side of the first substrate is formed at the end of the rotary recording medium exit side. 126. The method of manufacturing a probe array according to claim 125, wherein a bank portion is formed.   When performing the etching, the bank on the rotary recording medium entry side has a tapered portion inclined from the rotary recording medium entry side of the first substrate toward the rotary recording medium exit side of the first substrate. 126. The probe array manufacturing method according to claim 125, wherein a bank portion is formed.   126. The probe according to claim 125, wherein, when performing the etching, a bank portion having a tapered portion inclined in the radial direction of the rotary recording medium is formed in a bank substantially parallel to the direction in which the rotary recording medium enters. Array manufacturing method.   126. The probe array according to claim 125, wherein a first substrate is used in which a length in a traveling direction of the rotary recording medium is determined based on a thickness, a refractive index, and a numerical aperture of an optical element that receives light. Manufacturing method.   A method of manufacturing a probe array in which a rotary recording medium for recording information is arranged on the tip side of each projection, wherein the same n-type Si layer is etched, and each projection and each 122. The bank portion arranged at a position surrounding the periphery of the protrusion and a pad portion in contact with the rotary recording medium are formed on the rotary recording medium facing surface of the first substrate. A method for manufacturing a probe array.   When performing the etching, the center position between the entry end of the rotary recording medium and the exit end of the rotary recording medium of the first substrate, or ± 0. 131. The probe array manufacturing method according to claim 130, wherein the pad portion is formed at a position within a range of one.   122. The probe array manufacturing method according to claim 121, wherein after the patterning material is removed, a light-shielding film is formed only on the protrusions and the protrusion-forming surface of the substrate, or only on the protrusions. 122. The probe according to claim 121, wherein after the patterning material is removed, a light shielding film is formed only on the inclined surface of each protrusion and the protrusion forming surface of the substrate, or only on the inclined surface of each protrusion. Array manufacturing method. When forming the patterning material, a predetermined thickness is formed on the tip position of each of the projections to be manufactured, and a thickness other than the tip position of each of the projection parts is set to a predetermined thickness or less. 120. A method for producing a probe array according to item 121. A first substrate having light transmissivity, and a second substrate comprising a high-concentration p-type Si layer and an n-type Si layer having a refractive index higher than that of the first substrate, and the first substrate and the high substrate. The p-type Si layer is contacted and bonded,
Removing the n-type Si layer contained in the second substrate;
Forming a patterning material on the surface of the high-concentration p-type Si layer exposed by removing the n-type Si layer, and patterning the patterning material;
Etching the high-concentration p-type Si layer exposed by patterning to form a plurality of conical protrusions on the first substrate;
A method for producing a probe array, comprising: removing the patterned patterning material; and producing a probe array having a plurality of conical protrusions made of the high-concentration p-type Si layer on a first substrate. .   136. The method of manufacturing a probe array according to claim 135, wherein, when performing the etching, the protrusions are formed so as to have a plurality of taper angles on an outer wall.   135. The probe according to claim 135, further comprising: forming a bank portion having a height that is the same as the height of each of the protrusions and disposed at a position surrounding the periphery of each of the protrusions when performing the etching. Array manufacturing method.   The same high-concentration p-type Si layer is etched to further form a bank portion made of the same material as each of the protrusions and disposed at a position surrounding the periphery of each of the protrusions. 135. A method for producing the probe array according to 135. A method of manufacturing a probe array in which a rotary recording medium for recording information is arranged on the tip side of each of the protrusions,
When performing the etching, a bank portion is further formed which is disposed at a position surrounding the periphery of each of the protrusions and has an opening on the outflow side of the air flow generated when the rotary recording medium rotates. 136. A method of manufacturing a probe array according to claim 135.   When performing the etching, a tapered portion that is inclined from the rotary recording medium entry side of the first substrate toward the rotary recording medium exit side of the first substrate is formed at the end of the rotary recording medium exit side. 140. The method of manufacturing a probe array according to claim 139, wherein the bank portion is formed.   When performing the etching, the bank on the rotary recording medium entry side has a tapered portion inclined from the rotary recording medium entry side of the first substrate toward the rotary recording medium exit side of the first substrate. 140. The probe array manufacturing method according to claim 139, wherein a bank portion is formed.   140. The probe array according to claim 139, wherein when performing the etching, a bank portion having a tapered portion inclined in the radial direction of the rotary recording medium is formed in a bank substantially parallel to the direction in which the rotary recording medium enters. Manufacturing method.   140. The probe array according to claim 139, wherein the first substrate is used in which the length in the traveling direction of the rotary recording medium is determined based on the thickness, the refractive index, and the numerical aperture of the optical element that receives light. Manufacturing method. A method of manufacturing a probe array in which a rotary recording medium for recording information is arranged on the tip side of each of the protrusions,
Etching is performed on the same high-concentration p-type Si layer, and each of the protrusions, a bank portion disposed at a position surrounding the periphery of each of the protrusions, and a pad portion in contact with the rotary recording medium are formed in the first portion. 136. The probe array manufacturing method according to claim 135, wherein the probe array is formed on a surface of the substrate opposite to the rotary recording medium.   When performing the etching, the center position between the entry end of the rotary recording medium and the exit end of the rotary recording medium of the first substrate, or ± 0. 145. The method of manufacturing a probe array according to claim 144, wherein the pad portion is formed at a position within a range of one.   136. The probe array manufacturing method according to claim 135, wherein after the patterning material is removed, a light-shielding film is formed only on the protrusions and the protrusion-forming surfaces of the substrate, or only on the protrusions.   136. The probe according to claim 135, wherein after removing the patterning material, a light shielding film is formed only on the inclined surface of each protrusion and the protrusion forming surface of the substrate, or only on the inclined surface of each protrusion. Array manufacturing method.   When forming the patterning material, a predetermined thickness is formed on the tip position of each of the projections to be manufactured, and a thickness other than the tip position of each of the projection parts is set to a predetermined thickness or less. Item 135. A method of manufacturing the probe array according to Item 135.

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