JP4557277B2 - Method for manufacturing perpendicular magnetic recording medium - Google Patents

Method for manufacturing perpendicular magnetic recording medium Download PDF

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Publication number
JP4557277B2
JP4557277B2 JP2001113108A JP2001113108A JP4557277B2 JP 4557277 B2 JP4557277 B2 JP 4557277B2 JP 2001113108 A JP2001113108 A JP 2001113108A JP 2001113108 A JP2001113108 A JP 2001113108A JP 4557277 B2 JP4557277 B2 JP 4557277B2
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Japan
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layer
magnetic
magnetic field
exchange coupling
control layer
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JP2001113108A
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JP2002312925A (en
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泰志 酒井
貞幸 渡辺
一雄 榎本
覚 三谷
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Fuji Electric Co Ltd
Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Fuji Electric Holdings Ltd
Matsushita Electric Industrial Co Ltd
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Description

【0001】
【発明の属する技術分野】
本発明は各種磁気記録装置に搭載される垂直磁気記録媒体及びその製造方法に関する。
【0002】
【従来の技術】
磁気記録の高密度化を実現する技術として、従来の長手磁気記録方式に代えて、垂直磁気記録方式が注目されつつある。
【0003】
垂直磁気記録媒体は、硬質磁性材料の磁気記録層と、この記録層への記録に用いられる、磁気ヘッドが発生する磁束を集中させる役割を担う軟磁性材料の裏打ち層から構成される。このような構造の垂直磁気記録媒体において問題となるノイズのひとつであるスパイクノイズは、裏打ち層である軟磁性層に形成された磁壁によるものであることが知られている。そのため垂直磁気記録媒体の低ノイズ化のためには、軟磁性裏打ち層の磁壁形成を阻止する必要がある。
【0004】
この軟磁性裏打ち層の磁壁の制御については、例えば特開平6−180834号公報や特開平10−214719号公報に示されているように、軟磁性裏打ち層の上層や下層に、Co合金等の強磁性層を形成しこれを所望の方向に磁化させるように着磁する方法や、反強磁性薄膜を形成し交換結合を利用して磁化をピン止めする方法が提案されている。
【0005】
磁区制御層としての反強磁性層を用いて軟磁性裏打ち層との交換結合により磁壁の制御を行なう方法は、交換結合が十分に得られた場合、軟磁性裏打ち層の磁壁形成を阻止することができ、非常に効果的である。しかしながら、十分な交換結合を得るためには、例えば前出の特開平10−214719号公報に示すように、軟磁性裏打ち層の特性を出すためには成膜後の加熱処理が必要であり、この加熱処理は半径方向に磁場を印加しながら長時間行わなければならない処理であるため、大量生産を行なう場合に非常に不利であった。
【0006】
【発明が解決しようとする課題】
本発明の課題は、磁区制御層として反強磁性層を使用することにより軟磁性裏打ち層の磁壁の制御を有効に行なうことにより低ノイズ化された垂直磁気記録媒体を提供すること、および該垂直磁気記録媒体の大量生産に適した製造方法を提供することである。
【0007】
【課題を解決するための手段】
上記課題を解決するための本発明の態様は、非磁性基体上に少なくとも下地層、配向制御層、磁区制御層、交換結合磁界制御層、軟磁性裏打ち層、中間層、磁気記録層、保護層及び液体潤滑剤層が順次積層されてなる垂直磁気記録媒体の製造方法であって、前記軟磁性裏打ち層としてCo系アモルファス合金からなる軟磁性層を用い、前記磁区制御層と界面で接し交換結合磁界の大きさを調整するために少なくともCoとFeを含む合金からなる交換結合磁界制御層を用い、前記磁区制御層として少なくともIrを含むMn合金からなる反強磁性層を用い、該反強磁性層の結晶配向を制御するために下層にCrを含むNiFe系合金よりなる配向制御層を用い、更に該配向制御層の微細構造を制御するために最下層にTaよりなる下地層を用い、少なくとも前記磁区制御層としての反強磁性層、前記交換結合磁界制御層並びに前記軟磁性層の成膜時に、基板の半径方向に放射状に磁場を印加することによる垂直磁気記録媒体の製造方法である。
【0008】
【発明の実施の形態】
垂直磁気記録媒体について鋭意検討した結果、軟磁性裏打ち層としてCo系アモルファス合金からなる軟磁性層を用い、軟磁性裏打ち層と磁区制御層としての反強磁性層との間に交換結合磁界の大きさを調整するためにCoFe系合金からなる交換結合磁界制御層を用い、磁区制御層としての反強磁性層としてIrMn合金を用い、その反強磁性層の結晶配向を制御するために反強磁性層の下層にCrを含むNiFe合金よりなる配向制御層を設け、更にその配向制御層の微細構造を制御する目的で配向制御層の下層に下地層を設け、さらに、少なくとも磁区制御層としての反強磁性層、交換結合磁界制御層及び軟磁性層の成膜時に、基板の半径方向に磁場を印加することにより、成膜後に加熱処理等を行なわなくても大きな交換結合が得られ、軟磁性裏打ち層の磁壁の制御を有効に行なえることを見出した。
【0009】
図1は本発明の垂直磁気記録媒体の断面模式図である。非磁性基体1上に少なくとも下地層2、配向制御層3、磁区制御層4としての反強磁性層、交換結合磁界制御層5、軟磁性層6、中間層7、磁気記録層8及び保護層9が順に形成された構造を有しており、さらにその上に液体潤滑剤層10が形成されてなる形態を示している。
【0010】
非磁性基体1としては、通常の磁気記録媒体用に用いられるNiPメッキを施したAl合金や強化ガラス、結晶化ガラス等を用いることができる。下地層2としては、Taにより構成される。膜厚としては特に制限されないが、大量生産に適するためには3nm〜50nm程度が望ましい。配向制御層3としては、少なくともCrを含むNiFe合金により構成される。特に膜厚は制限されないが、大量生産に適するためには3nm〜50nm程度が望ましい。磁区制御層4としての反強磁性層としては、IrMn合金により構成される。膜厚は特に制限されないが、適度な交換結合が得られ、かつ大量生産に適するためには5nm〜50nm程度が望ましい。交換結合磁界制御層5としては、少なくともCoとFeを含む合金により構成される。大きな交換結合磁界を得るためには、このCoFe系合金に非磁性元素を添加しない方がよい。交換結合磁界制御層5起因のノイズを低下させるために、膜厚は出来るだけ薄い方がよく、1nm〜10nm程度が好ましい。軟磁性層6としては、Co系アモルファス合金が用いられる。軟磁性層6の膜厚は、記録に使用する磁気ヘッドの構造や特性によって最適値が変化するが、50nm以上300nm以下であることが、生産性との兼ね合いから望ましい。
【0011】
中間層7は、磁気記録層8の結晶配向性や結晶粒径を好ましく制御するために用いられる。中間層の材料として用いることのできるものとして、例えばTiやTiCr合金などがあげられる。磁気記録層8は少なくともCoとCrを含む合金の強磁性材料が好適に用いられ、その六方細密充填構造のc軸が膜面に垂直方向に配向していることが垂直磁気記録媒体として用いるために必要である。保護層9は、例えばカーボンを主体とする薄膜が用いられる。また液体循環剤層10は、例えばパーフルオロポリエーテル系の潤滑剤を用いることができる。
【0012】
以上説明したとおりの層構成からなる、図1に示した磁気記録媒体の製造にあたっては、少なくとも磁区制御層4としての反強磁性層、交換結合磁界制御層5並びに軟磁性層6を成膜する際には、例えば図2に示すように、基板の半径方向に磁場を印加しながら行なう必要がある。これによって、磁区制御層4としての反強磁性層の磁化が基板の半径方向に固定され、続いて積層される交換結合磁界制御層5、軟磁性層6の磁化容易軸も基板半径方向に向くため、効果的な磁壁の制御、すなわち磁壁形成の阻止が可能となる。磁壁の制御の観点からは、印加する磁場の強さに制限はないが、極端に強い磁場を成膜中に印加するとスパッタリングによる成膜に支障をきたす恐れがあるため、1000Oe程度以下にすることが望ましい。
【0013】
【実施例】
以下に本発明の実施例を記す。
【0014】
実施例
非磁性基体として表面が平滑な化学強化ガラス基板(例えばHOYA社製N−5ガラス基板)を用い、これを洗浄後スパッタ装置内に導入し、Taターゲットを用いてTa下地層を5nm成膜し、続いてCrを添加したNiFe系合金ターゲットを用い、NiFeCr合金薄膜を5nm成膜し、IrMn合金ターゲットを用い磁区制御層としての反強磁性層を5nmの厚さで成膜し、引き続いてCoFe合金のターゲットを用い交換結合磁界制御層を2nm成膜後、CoZrNb合金ターゲットを用いて軟磁性層を100nm成膜した。これらの磁区制御層としての反強磁性層、交換結合磁界制御層並びに軟磁性層の成膜時には、前述の同じスパッタ装置内で基板の半径方向に平行に50Oeの磁場を印加した。後述の交換結合磁界測定用の試料には、この時点でスパッタ装置から取り出した軟磁性裏打ち層までの積層構成体を用いた。その他の試験については液体潤滑剤層まで成膜した垂直磁気記録媒体を用いた。なお残りの層を形成して本発明の垂直磁気記録媒体を作製する場合には、前述の同じスパッタ装置内で引き続いてランプヒータを用いて基板表面温度が250℃になるように加熱を行なった後、Ti中間層を10nm、引き続きCoCrPt磁気記録層を30nm成膜し、最後にカーボン保護層を10nm成膜後、真空装置から取り出した。これらの成膜はすべてArガス圧5mTorr下でDCマグネトロンスパッタリング法により行なった。その後、パーフルオロポリエーテルからなる液体潤滑剤層2nmをディップ法により形成し、垂直磁気記録媒体とした。
【0015】
比較例1
下地層、配向制御層並びに交換結合磁界制御層付与による効果を検証するために、上記実施例に示した製造方法において、Ta,NiFeCr並びにCoFe層を付与せずに非磁性基体から軟磁性裏打ち層までの積層構成体を作製した。本比較例では、実施例で述べたように、ここまでの積層構成体により以下に述べる交換結合磁界の大きさを測定し、その他の試験については液体潤滑剤層まで成膜した垂直磁気記録媒体を用いた。なお、垂直磁気記録媒体を作製する場合には、実施例と同様に同じスパッタ装置内で引き続いてTi中間層、磁気記録層、カーボン保護層、および液体潤滑剤層を形成し、垂直磁気記録媒体とした。
【0016】
比較例2
下地層並びに交換結合磁界制御層付与による効果を検証するために、上記実施例に示した製造方法において、Ta並びにCoFe層を付与せずに非磁性基体から軟磁性裏打ち層までの積層構成体を作製した。本比較例では、実施例で述べたように、ここまでの積層構成体により以下に述べる交換結合磁界の大きさを測定し、その他の試験については液体潤滑剤層まで成膜した垂直磁気記録媒体を用いた。なお、垂直磁気記録媒体を作製する場合には、実施例と同様に同じスパッタ装置内で引き続いてTi中間層、磁気記録層、カーボン保護層、および液体潤滑剤層を形成し、垂直磁気記録媒体とした。
【0017】
比較例3
交換結合磁界制御層付与による効果を検証するために、上記実施例に示した製造方法において、CoFe層を付与せずに非磁性基体から軟磁性裏打ち層までの積層構成体を作製した。本比較例では、実施例で述べたように、ここまでの積層構成体により以下に述べる交換結合磁界の大きさを測定し、その他の試験については液体潤滑剤層まで成膜した垂直磁気記録媒体を用いた。なお、垂直磁気記録媒体を作製する場合には、実施例と同様に同じスパッタ装置内で引き続いてTi中間層、磁気記録層、カーボン保護層、および液体潤滑剤層を形成し、垂直磁気記録媒体とした。
【0018】
上記の各実施例および比較例における、中間層、磁気記録層、保護層及び液体循環剤層を形成せずにスパッタ装置から取り出した試料の基板半径方向の磁化曲線を振動試料型磁力計にて測定し、交換結合磁界を測定した。また完成した垂直磁気記録媒体の軟磁性裏打ち層に形成される磁壁の有無を確認するために、スピンスタンドテスターを用いて、信号が書き込まれていない状態での出力波形の平均値に対する変動の割合(COV)を測定することにより、スパイクノイズの有無を調べた。
【0019】
図3には、層構成を変えた時の交換結合磁界の値を示した。比較例1に示した媒体層構成(Ta,NiFeCr,CoFe層なし)の場合には、交換結合磁界は全く得られない。配向制御層を付与した比較例2の媒体層構成(Ta,CoFe層なし)にすることにより交換結合磁界が出現し、8Oe程度の交換結合磁界が得られる。配向制御層の微細構造を制御するために下地層を用いた比較例3(CoFe層なし)に示す媒体層構成にすることにより、更に大きな15Oe程度の交換結合磁界に得ることが出来る。
【0020】
交換結合磁界制御層を付与した本発明による層構成にすることにより、交換結合磁界は急激に増加し、32Oeの大きな値が得られた。
【0021】
図4にスパイクノイズの存在を示す指標となるCOV値を各層構成に対して示す。参考として、図3に示した各層構成における交換結合磁界の強さも同じグラフに示した。交換結合磁界が0の場合には、スパイクノイズによりCOV値は大きな値を示すが、交換結合磁界が大きくなるに従いCOVは減少し、交換結合磁界が10Oe以上では、軟磁性裏打ち層がない媒体(スパイクノイズなし)とほぼ同等の値に示している。このように、本発明による垂直磁気記録媒体を用いることにより、スパイクノイズを完全に抑制することが出来る。
【0022】
図5には、磁区制御層としての反強磁性層及び軟磁性層の成膜時に、磁場印加を行なった垂直磁気記録媒体並びに行なわずに成膜した垂直磁気記録媒体のスピンスタンドテスターによる1周分の出力波形を示す。磁場中成膜を行なうことにより、交換結合磁界の方向を半径方向に揃えた垂直磁気記録媒体においては全くスパイクノイズは発生していないが、磁場印加を行なわずに成膜を行なった垂直磁気記録媒体においては、全周に渡り不均一にスパイクノイズが発生していることが分かる。これは、交換結合磁界による一方向異方性の向きがそろっていないために、境界において磁壁が発生し、これがスパイクノイズとして観測されているためである。このように、スパイクノイズをなくすためには、磁区制御層としての反強磁性層、交換結合磁界制御層及び軟磁性層を成膜する際に、基板の半径方向に放射状に磁場を印加する必要がある。
【0023】
【発明の効果】
以上述べたように本発明によれば、軟磁性裏打ち層としてCo系アモルファス合金からなる軟磁性層を用い、磁区制御層としてのIrMn系合金反強磁性層の結晶配向性を向上させるためにNiFeCr系合金配向制御層を用い、更に配向制御層の微細構造を制御するためにTaよりなる下地層を用い、軟磁性裏打ち層と磁区制御層としての反強磁性層との間に交換結合磁界の大きさを調整するためにCoFe系合金からなる交換結合磁界制御層を用いることにより、軟磁性層の磁化を磁区制御層としての反強磁性層との交換結合によりピン止めし、ノイズ源となる軟磁性層の磁壁形成の抑止を行なうことができる。本発明の磁区制御層としての反強磁性層を使用する場合、反強磁性層、交換結合磁界制御層並びに軟磁性裏打ち層の成膜時に基板に磁場を印加するという非常に単純な製造方法により、必要とされる均一で高い交換結合が得られるため、大量生産にも非常に適したものである。
【図面の簡単な説明】
【図1】本発明による磁気記録媒体の構成を示す断面模式図である。
【図2】本発明の実施例を説明するためのもので、基板の半径方向に磁場を印加している様子を示す模式図である。
【図3】本発明の実施例を説明するためのもので、実施例において作製した非磁性基体から軟磁性裏打ち層までの層構成体の層構成を変えた時の交換結合磁界の値の変化を示したグラフである。
【図4】本発明の実施例を説明するためのもので、実施例において作製した垂直磁気記録媒体の層構成を変えた時のCOVと交換結合磁界の値の変化を示したグラフである。
【図5】本発明の実施例を説明するためのもので、磁区制御層としての反強磁性層及び軟磁性層の成膜時に、磁場印加を行なった垂直磁気記録媒体並びに行なわずに成膜した垂直磁気記録媒体のスピンスタンドテスターによる1周分の出力波形を示した図である。
【符号の説明】
1 非磁性基体
2 下地層
3 配向制御層
4 磁区制御層
5 交換結合磁界制御層
6 軟磁性裏打ち層
7 中間層
8 磁気記録層
9 保護層
10 液体潤滑剤層
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a perpendicular magnetic recording medium mounted on various magnetic recording apparatuses and a manufacturing method thereof.
[0002]
[Prior art]
As a technique for realizing a high density magnetic recording, a perpendicular magnetic recording system is drawing attention in place of the conventional longitudinal magnetic recording system.
[0003]
The perpendicular magnetic recording medium is composed of a magnetic recording layer made of hard magnetic material and a backing layer made of soft magnetic material which is used for recording on the recording layer and plays a role of concentrating magnetic flux generated by the magnetic head. It is known that spike noise, which is one of the noises problematic in the perpendicular magnetic recording medium having such a structure, is caused by a domain wall formed in a soft magnetic layer as a backing layer. Therefore, in order to reduce the noise of the perpendicular magnetic recording medium, it is necessary to prevent the domain wall formation of the soft magnetic underlayer.
[0004]
As for the control of the domain wall of the soft magnetic backing layer, for example, as disclosed in Japanese Patent Laid-Open No. 6-180834 and Japanese Patent Laid-Open No. 10-214719, the upper and lower layers of the soft magnetic backing layer are made of a Co alloy or the like. There are proposed a method in which a ferromagnetic layer is formed and magnetized so as to be magnetized in a desired direction, and a method in which an antiferromagnetic thin film is formed and magnetization is pinned using exchange coupling.
[0005]
The method of controlling the domain wall by exchange coupling with the soft magnetic backing layer using the antiferromagnetic layer as the magnetic domain control layer prevents the domain wall formation of the soft magnetic backing layer when the exchange coupling is sufficiently obtained. Can be very effective. However, in order to obtain sufficient exchange coupling, for example, as shown in the above-mentioned Japanese Patent Application Laid-Open No. 10-214719, a heat treatment after film formation is necessary in order to obtain the characteristics of the soft magnetic backing layer. Since this heat treatment is a treatment that must be performed for a long time while applying a magnetic field in the radial direction, it is very disadvantageous for mass production.
[0006]
[Problems to be solved by the invention]
An object of the present invention is to provide a perpendicular magnetic recording medium with reduced noise by effectively controlling a domain wall of a soft magnetic underlayer by using an antiferromagnetic layer as a magnetic domain control layer, and It is an object of the present invention to provide a manufacturing method suitable for mass production of magnetic recording media.
[0007]
[Means for Solving the Problems]
An aspect of the present invention for solving the above-described problems is that at least an underlayer, an orientation control layer, a magnetic domain control layer, an exchange coupling magnetic field control layer, a soft magnetic backing layer, an intermediate layer, a magnetic recording layer, and a protective layer are formed on a nonmagnetic substrate. And a method of manufacturing a perpendicular magnetic recording medium in which liquid lubricant layers are sequentially laminated, wherein a soft magnetic layer made of a Co-based amorphous alloy is used as the soft magnetic backing layer, and is in contact with the magnetic domain control layer at the interface and exchange coupled In order to adjust the magnitude of the magnetic field, an exchange coupling magnetic field control layer made of an alloy containing at least Co and Fe is used, and an antiferromagnetic layer made of an Mn alloy containing at least Ir is used as the magnetic domain control layer. In order to control the crystal orientation of the layer, an orientation control layer made of a NiFe-based alloy containing Cr is used as a lower layer, and in order to control the microstructure of the orientation control layer, an underlayer made of Ta is used as the lowermost layer. , The antiferromagnetic layer at least as the magnetic domain control layer, during the formation of the exchange coupling magnetic field control layer and the soft magnetic layer, in the manufacturing method of the perpendicular magnetic recording medium by applying a magnetic field radially in the radial direction of the substrate is there.
[0008]
DETAILED DESCRIPTION OF THE INVENTION
As a result of intensive studies on perpendicular magnetic recording media, a soft magnetic layer made of a Co-based amorphous alloy was used as the soft magnetic backing layer, and the magnitude of the exchange coupling magnetic field between the soft magnetic backing layer and the antiferromagnetic layer as the magnetic domain control layer was large. In order to adjust the thickness, an exchange coupling magnetic field control layer made of a CoFe-based alloy is used, an IrMn alloy is used as an antiferromagnetic layer as a magnetic domain control layer, and an antiferromagnetic material is used to control the crystal orientation of the antiferromagnetic layer. An orientation control layer made of a NiFe alloy containing Cr is provided below the layer, and an underlayer is provided below the orientation control layer for the purpose of controlling the microstructure of the orientation control layer. By applying a magnetic field in the radial direction of the substrate during the formation of the ferromagnetic layer, exchange coupling magnetic field control layer, and soft magnetic layer, a large exchange coupling can be obtained without performing heat treatment after the film formation. It was effectively found that perform the control of the magnetic wall of the soft magnetic underlayer.
[0009]
FIG. 1 is a schematic sectional view of a perpendicular magnetic recording medium of the present invention. On the nonmagnetic substrate 1, at least the underlayer 2, the orientation control layer 3, the antiferromagnetic layer as the magnetic domain control layer 4, the exchange coupling magnetic field control layer 5, the soft magnetic layer 6, the intermediate layer 7, the magnetic recording layer 8, and the protective layer 9 has a structure in which 9 is formed in order, and a liquid lubricant layer 10 is further formed thereon.
[0010]
As the nonmagnetic substrate 1, an Al alloy, tempered glass, crystallized glass, or the like subjected to NiP plating, which is used for a normal magnetic recording medium, can be used. The underlayer 2 is made of Ta. The film thickness is not particularly limited, but is preferably about 3 nm to 50 nm in order to be suitable for mass production. The orientation control layer 3 is made of a NiFe alloy containing at least Cr. The film thickness is not particularly limited, but is preferably about 3 nm to 50 nm in order to be suitable for mass production. The antiferromagnetic layer as the magnetic domain control layer 4 is made of an IrMn alloy. The film thickness is not particularly limited, but is preferably about 5 nm to 50 nm in order to obtain appropriate exchange coupling and to be suitable for mass production. The exchange coupling magnetic field control layer 5 is made of an alloy containing at least Co and Fe. In order to obtain a large exchange coupling magnetic field, it is better not to add a nonmagnetic element to this CoFe alloy. In order to reduce noise caused by the exchange coupling magnetic field control layer 5, the film thickness should be as thin as possible, and preferably about 1 nm to 10 nm. As the soft magnetic layer 6, a Co-based amorphous alloy is used. Although the optimum value of the thickness of the soft magnetic layer 6 varies depending on the structure and characteristics of the magnetic head used for recording, it is preferably 50 nm or more and 300 nm or less from the viewpoint of productivity.
[0011]
The intermediate layer 7 is used for preferably controlling the crystal orientation and crystal grain size of the magnetic recording layer 8. Examples of materials that can be used as the material for the intermediate layer include Ti and TiCr alloys. The magnetic recording layer 8 is preferably made of a ferromagnetic material of an alloy containing at least Co and Cr, and the c-axis of the hexagonal close-packed structure is oriented perpendicular to the film surface for use as a perpendicular magnetic recording medium. Is necessary. For example, a thin film mainly composed of carbon is used for the protective layer 9. In addition, for example, a perfluoropolyether lubricant can be used for the liquid circulating agent layer 10.
[0012]
In manufacturing the magnetic recording medium shown in FIG. 1 having the layer structure as described above, at least the antiferromagnetic layer, the exchange coupling magnetic field control layer 5 and the soft magnetic layer 6 as the magnetic domain control layer 4 are formed. In this case, for example, as shown in FIG. 2, it is necessary to apply the magnetic field in the radial direction of the substrate. As a result, the magnetization of the antiferromagnetic layer as the magnetic domain control layer 4 is fixed in the radial direction of the substrate, and the magnetization easy axes of the exchange coupling magnetic field control layer 5 and the soft magnetic layer 6 that are subsequently laminated also face the radial direction of the substrate. Therefore, effective domain wall control, that is, prevention of domain wall formation becomes possible. From the viewpoint of controlling the domain wall, the strength of the magnetic field to be applied is not limited. However, if an extremely strong magnetic field is applied during film formation, there is a risk of film formation by sputtering. Is desirable.
[0013]
【Example】
Examples of the present invention will be described below.
[0014]
EXAMPLE A chemically strengthened glass substrate (for example, N-5 glass substrate manufactured by HOYA) having a smooth surface was used as a nonmagnetic substrate, and this was introduced into a sputtering apparatus after cleaning, and a Ta underlayer was formed to 5 nm using a Ta target. Then, using a NiFe-based alloy target to which Cr is added, a NiFeCr alloy thin film is formed to a thickness of 5 nm, and an antiferromagnetic layer as a magnetic domain control layer is formed to a thickness of 5 nm using an IrMn alloy target. After forming a 2 nm exchange coupling magnetic field control layer using a CoFe alloy target, a soft magnetic layer was formed to 100 nm using a CoZrNb alloy target. When forming the antiferromagnetic layer, the exchange coupling magnetic field control layer, and the soft magnetic layer as the magnetic domain control layers, a magnetic field of 50 Oe was applied in parallel to the radial direction of the substrate in the same sputtering apparatus. As a sample for measuring an exchange coupling magnetic field, which will be described later, a laminated structure up to the soft magnetic backing layer taken out from the sputtering apparatus at this time was used. For other tests, a perpendicular magnetic recording medium having a liquid lubricant layer formed thereon was used. When the remaining layer was formed to produce the perpendicular magnetic recording medium of the present invention, the substrate surface temperature was heated to 250 ° C. using a lamp heater in the same sputtering apparatus as described above. Thereafter, a Ti intermediate layer was formed to 10 nm, and subsequently a CoCrPt magnetic recording layer was formed to 30 nm. Finally, a carbon protective layer was formed to 10 nm, and then removed from the vacuum apparatus. All these films were formed by DC magnetron sputtering under Ar gas pressure of 5 mTorr. Thereafter, a liquid lubricant layer 2 nm made of perfluoropolyether was formed by a dip method to obtain a perpendicular magnetic recording medium.
[0015]
Comparative Example 1
In order to verify the effects of applying the underlayer, the orientation control layer, and the exchange coupling magnetic field control layer, in the manufacturing method shown in the above embodiment, a soft magnetic backing layer is formed from a nonmagnetic substrate without adding a Ta, NiFeCr, or CoFe layer. The laminated structure up to was produced. In this comparative example, as described in the examples, the magnitude of the exchange coupling magnetic field described below was measured with the laminated structure so far, and the other magnetic recording media were formed up to the liquid lubricant layer for other tests. Was used. In the case of producing a perpendicular magnetic recording medium, a Ti intermediate layer, a magnetic recording layer, a carbon protective layer, and a liquid lubricant layer are subsequently formed in the same sputtering apparatus as in the embodiment, and the perpendicular magnetic recording medium is formed. It was.
[0016]
Comparative Example 2
In order to verify the effect of applying the underlayer and the exchange coupling magnetic field control layer, in the manufacturing method shown in the above embodiment, the laminated structure from the nonmagnetic substrate to the soft magnetic backing layer without providing the Ta and CoFe layers. Produced. In this comparative example, as described in the examples, the magnitude of the exchange coupling magnetic field described below was measured with the laminated structure so far, and the other magnetic recording media were formed up to the liquid lubricant layer for other tests. Was used. In the case of producing a perpendicular magnetic recording medium, a Ti intermediate layer, a magnetic recording layer, a carbon protective layer, and a liquid lubricant layer are subsequently formed in the same sputtering apparatus as in the embodiment, and the perpendicular magnetic recording medium is formed. It was.
[0017]
Comparative Example 3
In order to verify the effect of providing an exchange coupling magnetic field control layer, a laminated structure from a nonmagnetic substrate to a soft magnetic backing layer was prepared without applying a CoFe layer in the manufacturing method shown in the above example. In this comparative example, as described in the examples, the magnitude of the exchange coupling magnetic field described below was measured with the laminated structure so far, and the other magnetic recording media were formed up to the liquid lubricant layer for other tests. Was used. In the case of producing a perpendicular magnetic recording medium, a Ti intermediate layer, a magnetic recording layer, a carbon protective layer, and a liquid lubricant layer are subsequently formed in the same sputtering apparatus as in the embodiment, and the perpendicular magnetic recording medium is formed. It was.
[0018]
In each of the above Examples and Comparative Examples, the magnetization curve in the substrate radial direction of the sample taken out from the sputtering apparatus without forming the intermediate layer, the magnetic recording layer, the protective layer and the liquid circulating agent layer was measured with a vibrating sample magnetometer. The exchange coupling magnetic field was measured. In addition, in order to confirm the presence or absence of the domain wall formed in the soft magnetic underlayer of the completed perpendicular magnetic recording medium, the rate of variation with respect to the average value of the output waveform when no signal is written using a spin stand tester The presence or absence of spike noise was investigated by measuring (COV).
[0019]
FIG. 3 shows the value of the exchange coupling magnetic field when the layer configuration is changed. In the case of the medium layer configuration (without Ta, NiFeCr, CoFe layers) shown in Comparative Example 1, no exchange coupling magnetic field is obtained. By using the medium layer structure (without Ta, CoFe layers) of Comparative Example 2 provided with an orientation control layer, an exchange coupling magnetic field appears and an exchange coupling magnetic field of about 8 Oe is obtained. By using the medium layer structure shown in Comparative Example 3 (without the CoFe layer) using an underlayer to control the fine structure of the orientation control layer, a larger exchange coupling magnetic field of about 15 Oe can be obtained.
[0020]
By adopting the layer structure according to the present invention to which the exchange coupling magnetic field control layer was added, the exchange coupling magnetic field increased rapidly and a large value of 32 Oe was obtained.
[0021]
FIG. 4 shows a COV value as an index indicating the presence of spike noise for each layer configuration. For reference, the intensity of the exchange coupling magnetic field in each layer configuration shown in FIG. 3 is also shown in the same graph. When the exchange coupling magnetic field is 0, the COV value is large due to spike noise, but the COV decreases as the exchange coupling magnetic field increases. When the exchange coupling magnetic field is 10 Oe or more, there is no medium with a soft magnetic backing layer ( The value is almost equivalent to (no spike noise). Thus, spike noise can be completely suppressed by using the perpendicular magnetic recording medium according to the present invention.
[0022]
FIG. 5 shows one rotation of a perpendicular magnetic recording medium to which a magnetic field is applied and a perpendicular magnetic recording medium which has been formed without applying a magnetic field during the formation of an antiferromagnetic layer and a soft magnetic layer as magnetic domain control layers. The output waveform of the minute is shown. Spike noise does not occur at all in perpendicular magnetic recording media in which the direction of the exchange coupling magnetic field is aligned in the radial direction by performing film formation in a magnetic field, but perpendicular magnetic recording was performed without applying a magnetic field. It can be seen that spike noise occurs non-uniformly over the entire circumference of the medium. This is because the domain wall is generated at the boundary because the direction of unidirectional anisotropy due to the exchange coupling magnetic field is not aligned, and this is observed as spike noise. Thus, in order to eliminate spike noise, it is necessary to apply a magnetic field radially in the radial direction of the substrate when forming the antiferromagnetic layer, the exchange coupling magnetic field control layer, and the soft magnetic layer as the magnetic domain control layer. There is.
[0023]
【The invention's effect】
As described above, according to the present invention, a soft magnetic layer made of a Co-based amorphous alloy is used as the soft magnetic backing layer, and NiFeCr is used to improve the crystal orientation of the IrMn-based alloy antiferromagnetic layer as the magnetic domain control layer. A base alloy layer for controlling the microstructure of the orientation control layer, and an exchange coupling magnetic field between the soft magnetic backing layer and the antiferromagnetic layer as the magnetic domain control layer. By using an exchange coupling magnetic field control layer made of a CoFe-based alloy to adjust the size, the magnetization of the soft magnetic layer is pinned by exchange coupling with an antiferromagnetic layer as a magnetic domain control layer, and becomes a noise source It is possible to suppress the domain wall formation of the soft magnetic layer. When the antiferromagnetic layer is used as the magnetic domain control layer of the present invention, a very simple manufacturing method in which a magnetic field is applied to the substrate during the formation of the antiferromagnetic layer, the exchange coupling magnetic field control layer, and the soft magnetic backing layer. Because the required uniform and high exchange coupling is obtained, it is also very suitable for mass production.
[Brief description of the drawings]
FIG. 1 is a schematic cross-sectional view showing the configuration of a magnetic recording medium according to the present invention.
FIG. 2 is a schematic diagram illustrating a state in which a magnetic field is applied in a radial direction of a substrate for explaining an embodiment of the present invention.
FIG. 3 is a diagram for explaining an example of the present invention, and shows a change in the value of the exchange coupling magnetic field when the layer structure of the layer structure from the nonmagnetic substrate to the soft magnetic backing layer produced in the example is changed. It is the graph which showed.
FIG. 4 is a graph for explaining an example of the present invention, and shows a change in the value of the COV and the exchange coupling magnetic field when the layer configuration of the perpendicular magnetic recording medium manufactured in the example is changed.
FIG. 5 is a diagram for explaining an embodiment of the present invention, and a perpendicular magnetic recording medium to which a magnetic field was applied during film formation of an antiferromagnetic layer and a soft magnetic layer as a magnetic domain control layer, and a film formed without it. It is the figure which showed the output waveform for 1 round by the spin stand tester of the perpendicular magnetic recording medium.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Nonmagnetic base | substrate 2 Underlayer 3 Orientation control layer 4 Magnetic domain control layer 5 Exchange coupling magnetic field control layer 6 Soft magnetic backing layer 7 Intermediate layer 8 Magnetic recording layer 9 Protective layer 10 Liquid lubricant layer

Claims (1)

非磁性基体上に少なくとも下地層、配向制御層、磁区制御層、交換結合磁界制御層、軟磁性裏打ち層、中間層、磁気記録層、保護層及び液体潤滑剤層が順次積層されてなる垂直磁気記録媒体の製造方法であって、前記軟磁性裏打ち層としてCo系アモルファス合金からなる軟磁性層を用い、前記磁区制御層と界面で接し交換結合磁界の大きさを調整するために少なくともCoとFeを含む合金からなる交換結合磁界制御層を用い、前記磁区制御層として少なくともIrを含むMn合金からなる反強磁性層を用い、該反強磁性層の結晶配向を制御するために下層にCrを含むNiFe系合金よりなる配向制御層を用い、更に該配向制御層の微細構造を制御するために最下層にTaよりなる下地層を用い、少なくとも前記磁区制御層としての反強磁性層、前記交換結合磁界制御層並びに前記軟磁性層の成膜時に、基板の半径方向に放射状に磁場を印加することを特徴とする垂直磁気記録媒体の製造方法。Perpendicular magnetism in which at least an underlayer, an orientation control layer, a magnetic domain control layer, an exchange coupling magnetic field control layer, a soft magnetic backing layer, an intermediate layer, a magnetic recording layer, a protective layer, and a liquid lubricant layer are sequentially laminated on a nonmagnetic substrate. A method of manufacturing a recording medium, wherein a soft magnetic layer made of a Co-based amorphous alloy is used as the soft magnetic backing layer, and at least Co and Fe are used to adjust the magnitude of an exchange coupling magnetic field in contact with the magnetic domain control layer at the interface. In order to control the crystal orientation of the antiferromagnetic layer, Cr is used in the lower layer, using an exchange coupling magnetic field control layer made of an alloy containing Ni, using an antiferromagnetic layer made of a Mn alloy containing at least Ir as the magnetic domain control layer. an alignment control layer composed of NiFe alloy containing, further using a base layer made of Ta in the lowest layer in order to control the microstructure of the orientation control layer, an antiferroelectric as at least the magnetic domain control layer Sex layer, during the formation of the exchange coupling magnetic field control layer and the soft magnetic layer, a method of manufacturing a perpendicular magnetic recording medium and applying a magnetic field radially in the radial direction of the substrate.
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