JP4545733B2 - Conductive paste composition and circuit board - Google Patents

Description

  The present invention relates to a conductor paste composition for a circuit board and a circuit board.

  Conventionally, as a circuit board, an electrically conductive metal powder mainly composed of a noble metal such as silver and palladium (Pd) or platinum and an inorganic binder made of glass frit on an insulating substrate such as alumina in an organic vehicle. A thick film wiring substrate obtained by printing and baking a dispersed conductor paste composition is generally used.

  In recent years, circuit boards have been increasingly demanded for higher density, smaller size, and environmental resistance. For example, in an IC substrate for automobiles, there is a demand for higher integration due to the hybrid IC, and further, in the future, the arrangement of the substrate in the vehicle compartment in the engine room will be required.

  For this reason, the wiring portion formed on the insulating substrate is also required to have stricter reliability characteristics than before. For example, the insulation between the wiring portions does not deteriorate even after a voltage is applied to a narrow wiring interval and left in a temperature and humidity environment for a long time. However, in the wiring part formed on the insulating substrate using a conductive paste containing silver, when water or water vapor is present, the silver contained in the wiring part is ionized when voltage is applied and moves from the positive electrode part to the negative electrode part. It is generally known that silver dendrite is generated and so-called silver migration is likely to occur, which lowers the insulation between the wiring portions. For this reason, a sealing structure is usually applied to prevent silver migration.

  However, the present inventors have now discovered a phenomenon in which the insulation resistance deteriorates when a voltage is applied in a high temperature atmosphere even in the absence of water or water vapor. Hereinafter, this phenomenon will be described with the results of verification experiments by the present inventors. To briefly explain this phenomenon, for example, a wiring part containing silver is arranged on an insulating substrate at a narrow interval of about 100 μm, and a voltage of about 16 V (for example, equivalent to the maximum standard for in-vehicle use) is applied between the wiring parts. If left in a high-temperature atmosphere of about 150 ° C., the insulation resistance value between the wiring portions greatly decreases with time, and this leads to insulation failure.

  This phenomenon occurs even in an atmosphere that is not affected by moisture, such as at 100 ° C or higher, or in a vacuum, etc., and migration occurs in the presence of moisture between the wiring parts even when it is close to a short circuit. There is no generation of silver dendrite, which is always seen, and there is no polarity (that is, it occurs regardless of the polarity of the positive and negative electrode parts), so the presence of moisture that has been widely known in the past It can be said that it is a newly discovered phenomenon that is completely different from the migration that occurs below. Hereinafter, this phenomenon is referred to as a high temperature leak phenomenon.

  Although the generation mechanism of this phenomenon has not been fully elucidated, according to our verification, the outline is as follows. Conventionally, a general thick film wiring substrate is a conductive paste in which a conductive metal powder containing silver and an inorganic binder made of glass frit are dispersed in an organic vehicle on an insulating substrate such as a ceramic substrate made of alumina. A wiring part can be formed by printing and baking the composition.

  Here, the conductor paste composition is usually baked at 800 to 900 ° C., and silver and a part of the inorganic binder, which are the composition of the conductor paste, are formed from the wiring portion printed on the insulating substrate at the time of baking. It evaporates and becomes a reactant containing silver and adheres to the insulating substrate in the vicinity of the wiring portion. This reactant is usually not observed because it exists in a very thin state. Moreover, the reactant has an insulating property, and the insulating property between the wiring parts is the same as that of the underlying insulating substrate.

  However, if a voltage is applied between the wiring parts where the reactants are present and left in a high temperature atmosphere (hereinafter referred to as a high temperature atmosphere) that is not affected by moisture, the silver contained in the reactants becomes conductive and the wiring parts The insulation properties of the material deteriorate with time. The above is the schematic mechanism of the high temperature leak phenomenon, which has been clarified by several verification experiments (Verification Experiment A, Verification Experiment B) described below.

  First, verification experiment A will be described. A general conductive paste composition containing silver is used to create a wiring board formed by printing and firing wiring parts having different wiring intervals on a ceramic substrate made of alumina, and a voltage is applied between the wiring parts. And leave it in a high-temperature atmosphere. In this verification experiment A, the voltage applied between the wiring portions was set to be higher than the normal use voltage (for example, 60 V) for acceleration.

  Then, as shown in FIG. 1, it was found that the insulation resistance value between the wiring portions decreased with the high temperature standing time. FIG. 1 is a graph showing a relationship between a high temperature standing time and an insulation resistance value (Log 10 ×, unit Ω). In each plot mark in the figure, white circles and black circles indicate a leaving temperature of 125 ° C., white triangles and black triangles indicate a leaving temperature of 150 ° C., each white mark indicates a wiring interval of 100 μm, and each black mark indicates a wiring interval of 50 μm.

  At this time, no change in the appearance like the silver dendrite generated by moisture, which is conventionally known, is observed between the wiring portions having a reduced insulation resistance value. Therefore, it was found that this phenomenon is a property that is affected by load conditions such as the interval between the wiring portions, the applied voltage value, and the standing temperature. Further, when the leaving time when the insulation resistance value between the wiring portions became 100 MΩ or less was defined as the insulation failure time, the relationship with the electric field strength obtained by the voltage applied between the wiring portions was examined, and the result shown in FIG. Obtained. FIG. 2 is a graph showing the relationship between the electric field strength and the insulation failure time. In each plot mark in the figure, ◯ indicates a standing temperature of 150 ° C. and Δ indicates a leaving temperature of 125 ° C.

  From the results of the verification experiment A shown in FIG. 1 and FIG. 2, the insulation deterioration between the wiring parts due to the conductivity of the reactant depends on the distance between the wiring parts and the electric field strength obtained by the applied voltage, and the leaving temperature is It was found that the higher the speed, the faster. Here, detailed observation was made as to why the insulation deterioration occurred. First, the wiring part where the insulation degradation was observed and the vicinity of the periphery were observed using an electron scanning microscope (SEM), but no change in appearance was observed before and after the insulation degradation. Furthermore, the same portion was analyzed and observed by a wavelength dispersive X-ray analyzer (EPMA), but no difference was observed before and after the decrease in insulation.

  However, before and after the decrease in insulation properties, it was confirmed that silver, which is a composition of a conductor paste that is not included as a component, and a part of the inorganic binder exist in the ceramic substrate. Further, these exist only in the vicinity of the periphery of the wiring part, and the number is closer to the wiring part. Therefore, as a result of observing with a transmission electron microscope (TEM) what the specific state exists, as shown in FIG. 3, the particles of alumina particles A1 which are the main constituents of the ceramic substrate It was confirmed that fine silver particles A3 were present in the glass material A2 portion of the same composition present in the boundary portion.

  This is because when a portion of the silver and inorganic binder contained in the conductor paste evaporates and adheres to the ceramic substrate in the vicinity of the periphery of the wiring portion formed by printing and firing with the conductor paste, the alumina of the alumina ceramic substrate It is presumed that this is because the vitreous present at the grain interface is softened, so that the evaporant is easily adsorbed. As a matter of course, even if the same observation is performed on a ceramic substrate on which the conductive paste is not printed and fired, the presence of the conductive paste composition such as silver particles is not confirmed. Thus, it was found that the high-temperature leak phenomenon involves some form of silver and a part of the inorganic binder contained in the conductor paste.

  Next, the following verification experiment (Verification Experiment B) was conducted to determine the origin of a part of the silver and the inorganic binder in the vicinity of the wiring portion. It was confirmed that the material (which will be abbreviated as the reaction product) that was reacted automatically adheres when the conductor paste is fired, and that the conductivity is attributed to silver in the reaction product. First, as a first step of the verification experiment B, a verification experiment B1 using the substrate α, the substrate β, and the substrate γ described below will be described.

  A normal wiring board in which a decrease in insulation between the wiring portions occurs is defined as a substrate α. A trimming technique (hereinafter referred to as laser trimming technique) used to adjust the resistance value of thick film resistors, which is generally used to adjust the resistance of thick film resistors, between the wiring parts formed by printing and baking a conductive paste containing silver on an insulating substrate The substrate β is obtained by mechanically removing the reactants present between the wiring parts by forming a groove so that the vicinity of the center between the wiring parts is parallel to the wiring parts using laser trimming.

  Further, a substrate on which the surface of the insulating substrate between the wiring portions is formed by laser trimming in the same manner as described above and then the wiring portions are formed by printing and baking is referred to as a substrate γ. As a result of confirming the insulation when the substrate α, the substrate β, and the substrate γ were applied with a voltage between the wiring portions and left in a high temperature atmosphere, a decrease in insulation was confirmed only for the substrate α and the substrate γ.

  From this, a portion of the conductor paste composition adheres to the periphery of the wiring portion obtained by printing and baking using a conductive paste containing silver on an insulating substrate under the certain conditions. Therefore, it can be said that the insulation is deteriorated. That is, in the verification experiment B1, it was found that a part of the conductor paste composition was adhered by firing.

  Subsequently, as a second step of the verification experiment B, a verification experiment B2 using the substrate δ and the substrate ε will be described with reference to FIGS. A substrate δ (see FIG. 4) is obtained by printing a thick-film conductor paste a containing silver on an insulating substrate almost over the entire surface of the insulating substrate b, and gold that has been confirmed to have no deterioration in insulation on the insulating substrate f in advance. A substrate in which the gold wiring portion e was formed using a material was a substrate ε (see FIG. 5).

  As shown in FIG. 6, the substrate δ and the substrate ε facing each other with the spacer c maintaining an arbitrary gap d are fired at the firing temperature of the conductor paste a. Thereafter, when the distance h between the gold wiring portions of the substrate ε was observed with an EPMA apparatus, it was confirmed that silver, which is the composition of the conductor paste a, and a part of the inorganic binder were present as described above. Further, the distribution of the presence thereof is almost the same as the printed surface of the conductor paste a on the substrate δ (that is, the entire surface of the insulating substrate b). It was confirmed that the insulation between the gold wiring portions e deteriorates when a voltage is applied between the gold wiring portions e in such a state and left in a high temperature atmosphere.

  From this, in the conductive paste containing general silver, part of silver and the inorganic binder is evaporated at the time of firing, and is scattered in the air, that is, in the verification experiment B2, the gap between the substrate δ and the substrate ε. It can be said that they are scattered and adhering as reactants on the insulating substrate near the periphery. That is, in the verification experiment B2, it was found that some of the adhesion paths of silver and the inorganic binder during firing were found.

  Furthermore, as a third step of the verification experiment B, a verification experiment B3 using the substrate δ and the substrate ε will be described with reference to FIG. As shown in FIG. 7, the distance g between the substrates δ and ε facing each other can be arbitrarily set by changing the thickness of the spacer c. As a result, the scattering distance of the reactant can be changed, and the amount of the reactant attached on the substrate ε can also be changed.

  That is, the amount of silver deposited on the substrate ε can be changed by changing the distance g between the substrates, and the amount of deposited silver decreases as the distance g between the substrates increases. It was confirmed that when voltage and temperature were applied to the sample with the silver adhesion amount changed as described above, a difference in the insulation degradation occurred depending on the silver adhesion amount as shown in FIG. FIG. 8 is a graph showing the relationship between the amount of deposited silver and the insulation failure time.

  From this verification experiment B3, it can be said that this phenomenon depends on the amount of silver existing as a reactant in the vicinity of the wiring portion, and that the greater the amount of silver deposited, the faster the insulation degradation. Therefore, in the verification experiment B, the reactant present in the vicinity of the wiring portion is scattered and adhered in the air when the conductor paste is fired, and the insulation resistance is deteriorated by applying a voltage in a high temperature atmosphere. It was sometimes confirmed that the silver in the reaction product was caused to become conductive.

  By the way, this high temperature leakage phenomenon has been conventionally observed to have a sealing structure to prevent silver migration that occurs in a moisture or water vapor atmosphere, and the reactants that cause this high temperature leakage phenomenon are usually observed. In addition, it has not been discovered to date because there is no change in appearance even when it becomes conductive and energized.

  Moreover, it can be said that there is a high possibility that the high-temperature leakage phenomenon is included in the insulation failure that has been caused by silver migration due to moisture. In addition, due to the above, since the substance (reactant) that causes the high-temperature leak phenomenon is adhered and formed on the insulating substrate at the time of firing, it is generated even in the absence of moisture. Even with a sealing structure that prevents silver migration, it is very difficult to make it conductive, that is, to prevent this phenomenon.

  The present invention has been made in view of the newly discovered high-temperature leak phenomenon by the present inventors, and when a voltage is applied in a high-temperature atmosphere in a circuit board having a wiring portion containing silver, water or water vapor is generated. It is an object of the present invention to suitably suppress the deterioration of the insulation resistance between wiring portions that occurs regardless of the presence or absence.

  In order to achieve the above object, the present inventors conducted the following examination experiment.

  Using a conventional conductor paste composition containing silver, an inorganic binder-less paste material containing no inorganic binder is produced, and after forming a wiring portion by printing and firing on a ceramic substrate made of alumina, When the vicinity of the wiring portion was observed with an SEM apparatus, it was confirmed that the silver particles were present in an isolated state. Further, even when a voltage was applied between the wiring portions and left in a high temperature atmosphere, the insulation between the wiring portions did not deteriorate.

  Furthermore, the silver powder which is a constituent of the conductor paste composition is present on the insulating substrate during firing, and starts to evaporate from a firing temperature of 700 ° C. or higher, and rapidly adheres when the firing temperature reaches about 800 ° C. or higher. I have also found that the amount increases. From this, in the wiring part formed by printing and firing the conductive paste composition containing silver, the reaction product containing silver which is attached to the vicinity of the wiring part at the time of firing and causes a decrease in insulation is an inorganic binder. It can be said that it cannot be formed without it.

  Therefore, the high-temperature leakage phenomenon is greatly affected by the formation of the reactant and the conductivity depending on the composition of the inorganic binder component of the conductive paste composition, the blending ratio of the inorganic binder component to the silver powder, the composition of the insulating substrate used, and the like. As a result, the insulating property is affected. Furthermore, the adhesion amount and conductivity of the reactant are influenced by the density and firing conditions of the conductor paste composition formed on the insulating substrate in addition to the above.

  Accordingly, in the conductive paste composition in which conductive metal powder containing silver and an inorganic binder are dispersed in an organic vehicle, focusing on suppressing the generation of the reactant itself that causes electrical conduction, Experiments were also conducted on the agent, insulating substrate, and firing conditions. The inventions according to claims 1 to 5 provide a conductor paste composition having an inorganic binder structure that suppresses the generation of reactants that cause electrical conduction.

That is, in the first to third aspects of the invention, in the conductive paste composition in which the conductive metal powder containing silver and the inorganic binder are dispersed in the organic vehicle, the inorganic binder suppresses the evaporation of silver. Since it consists of a substance, generation | occurrence | production of the reaction material which causes electroconductivity can be suppressed, and a high temperature leak phenomenon can be suppressed suitably. Further, the conductor paste composition contains a potassium compound, and the content of the potassium compound is 0.01 to 0.4 weight with respect to 100 parts by weight of the conductive metal powder in terms of potassium oxide. Part. Here, the above-mentioned inorganic binder can be a glass frit or a mixture of glass frit according to claims 1 to 3 .

In particular, according to the first to third aspects of the present invention, the glass frit that is an inorganic binder is present in a reaction product formed when the conductive paste composition is fired, and is a substance that easily becomes conductive (for example, V, W, Mn, Mo, Cu, Zn, etc.) are not included. Such a glass frit evaporates when the conductor paste composition is fired, becomes a reaction product and adheres to the substrate, and is difficult to become conductive even when a voltage and temperature are applied. For this reason, the insulation defect between wiring parts can be suppressed effectively.

Here, since the glass frit according to claim 1 has a high softening temperature when the conductor paste composition is fired, the vapor pressure is inevitably low. As a result, the adhesion amount of the reactant that is evaporated and chemically reacted and adhered when the conductor paste is baked can be reduced, and higher insulation between the wiring portions can be obtained. In general, the softening point of glass frit generally used for thick film conductor paste materials is in the range of 400 to 700 ° C. for the purpose of addition.

Further, since the B-Si-Pb-based glass frit according to claim 2 has a relatively low softening temperature, it easily evaporates when the conductor paste composition is fired, so that the ratio of the glass frit in the reaction product is increased and it is difficult to make it conductive. Become. In addition, the glass frit softens and melts before firing at a temperature (about 800 ° C.) before the silver begins to vigorously evaporate. For this reason, the molten glass frit covers a part or most of the silver powder, reduces the surface area of the silver, and hinders the evaporation of silver. As a result, the amount of silver deposited as a reactant decreases, making it difficult to make it conductive.

As in the invention described in claim 3 , the inorganic binder has a softening point of 700 to 950 ° C. and is composed of a B-Si-Al-Ca-based highly softened glass frit and a B-Si-Pb-based glass frit. It may be a mixture of types of glass frit.

The invention of claims 4 to claim 6, wherein, there is provided a conductive paste composition for forming the wiring portion of the substrate having the wiring portion containing silver, and conductive metal powder and an inorganic binder containing silver Is dispersed in an organic vehicle, and the inorganic binder is made of a substance that suppresses evaporation of silver. Furthermore, a potassium compound is contained, and the content of the potassium compound is 0.01 to 0.4 parts by weight with respect to 100 parts by weight of the conductive metal powder in terms of potassium oxide. . The inorganic binder made of a substance that suppresses evaporation of silver has the same effect as the inorganic binder according to claims 1 to 3 and can suitably suppress the high-temperature leak phenomenon.

The invention according to claim 7 is a circuit in which the conductive paste composition according to claims 1 to 6 is used in a substrate having a wiring portion containing silver, and a high-temperature leakage phenomenon is suitably suppressed. A substrate can be provided. By the way, as described above, the high-temperature leak phenomenon depends on the wiring portion interval (see FIG. 1), which is considered to be influenced by the scattering distance of silver or the like from the conductor paste composition. As a result of further investigation on this point, it was found that the scattering distance was about 200 μm.

  Therefore, it is considered that the high temperature leakage phenomenon occurs when the wiring portion interval is around 400 μm. For example, in a general wiring substrate such as a hybrid IC substrate, the interval between the wiring portions is usually 500 μm or less, and a high temperature leak phenomenon is likely to occur. Therefore, it is effective to use each of the insulating paste composition and the conductive paste composition for a circuit board including a substrate having a wiring portion containing silver having an interval of 500 μm or less.

  In addition, as described above, the silver powder that is a constituent of the conductor paste composition starts to evaporate from a baking temperature of 700 ° C. or higher, and the amount of adhesion rapidly increases when the temperature is about 800 ° C. or higher. It is effective to use the insulating paste composition and the conductive paste composition for a circuit board including a substrate having a wiring portion containing silver and having a portion heated at a temperature of 700 ° C. or higher.

Further, according to the study by the present inventors, it has been confirmed that when the substrate having a wiring portion containing silver is an alumina substrate, a high-temperature leakage phenomenon is likely to occur. The inventions according to claims 8 to 10 are made on the basis of such knowledge about the wiring portion interval, the firing condition of the conductor paste composition, the composition of the insulating substrate used, and the like, and the high temperature leakage With respect to a circuit board in which a phenomenon is likely to occur, a circuit board formed by firing a conductor paste composition that can suitably suppress a high-temperature leak phenomenon can be provided.

An embodiment of the present invention will be described. In each embodiment described below, the first, second, fourth, and fifth embodiments are reference examples, and the third embodiment corresponds to an embodiment of the invention described in the claims.
(First embodiment)
This embodiment relates to an insulating paste composition characterized in that the potassium compound is contained in an amount of 5 to 30 parts by weight in terms of oxide with respect to 100 parts by weight of the inorganic solid content. In the present embodiment, a circuit board (wiring substrate) including a substrate having a wiring portion containing silver having a spacing of 500 μm or less, and a portion having a wiring portion containing silver and heated at a temperature of 700 ° C. or more are provided. It can be used for a circuit board (wiring board) provided with the board | substrate which has. It is particularly suitable when the substrate is an alumina substrate.

  FIG. 9 shows a cross-sectional configuration diagram of a circuit board according to the present invention. 10 is a circuit board, 1 is an electrically insulated alumina substrate made of glass material and alumina powder, and 2 is a plurality of line-shaped wiring portions (thick film wiring) containing silver formed on the substrate 1. Are arranged in stripes with a wiring portion interval L1 (for example, 100 μm) provided in the direction perpendicular to the plane of the drawing. In the present embodiment, potassium oxide or glass containing the same (hereinafter referred to as potassium oxide or the like) is present between the wiring portions 2 on the substrate 1.

  The circuit board 10 is obtained by forming the wiring part 2 on the substrate 1 by printing and baking a conductive paste composition containing silver. Between the wiring parts 2, the presence of potassium oxide or the like in the reaction product formed when the conductor paste composition is fired prevents the reactant from becoming conductive, and the insulating property between the wiring parts 2 can be prevented. A high circuit board can be obtained and the high temperature leak phenomenon can be suitably suppressed.

  As the potassium compound, potassium oxide, potassium gluconate, potassium hydroxide, potassium citrate, potassium hydrogen tartrate and the like can be used. A potassium compound is mix | blended so that it may become 5-30 weight part in conversion of an oxide with respect to 100 weight part of inorganic solid content, and the insulating paste composition of this embodiment is created. FIG. 10 is an explanatory view showing an example of a method for producing a circuit board using the insulating paste composition of the present embodiment.

  By applying this insulating paste composition 3 onto the substrate 1 before printing the conductor paste composition in advance, a potassium compound can be present in at least a portion corresponding to between the wiring portions of the substrate 1. Here, the potassium compound may be present only in a portion corresponding to the wiring portion by masking or the like. Here, when the conductor paste composition is printed and fired, a reactant is formed between the wiring portions 2 together with the wiring portions 2. At the same time, the potassium compound previously applied and present between the wiring portions 2 becomes potassium oxide or the like by firing (for example, 700 ° C. or higher), and is present in the reaction product formed by the conductor paste composition. Suppresses sexification.

  Here, before the conductive paste composition is printed and fired, the heat treatment of the insulating paste composition 3 may be performed. In FIG. 10 and FIG. 11 described later, the completed insulating paste composition 3 (that is, the insulating paste composition 3 in the circuit board 10 in each drawing) is shown in a film shape for convenience. Since the volatile component in the insulating paste composition evaporates by firing, the potassium compound is usually dispersed in the form of particles.

  The application of the insulating paste composition and the heat treatment may be performed at any timing in the printing and firing of the conductor paste composition as described above. FIG. 11 is an explanatory view showing another example of a circuit board manufacturing method using the insulating paste composition of the present embodiment. After the conductor paste composition is printed on the substrate 1, the insulating paste composition 3 is applied (printed) to at least a portion corresponding to the space between the wiring portions 2 of the substrate 1, and both paste compositions are fired at the same time, or The conductive paste composition may be printed and fired on the substrate 1 to form the wiring portion 2, and then the insulating paste composition 3 may be applied (printed) and fired to allow the potassium compound to exist. In either method, potassium oxide or the like can be present in the reaction product, and the conductivity of the reaction product is suppressed.

  Moreover, the potassium compound or potassium oxide supplied between the wiring parts 2 may be provided in a state of being dissolved in a solvent alone, or may be a potassium hydroxide solution. The inorganic solid material may be used for vitreous which is a constituent of the ceramic substrate. A ceramic substrate is generally obtained by dispersing alumina powder and glassy material in a solvent, then processing into a plate and sintering at 800 to 1200 ° C. At this time, the potassium compound is contained as a potassium oxide or the like in the vitreous existing at the alumina grain boundary portion and the surface portion of the substrate 1. This vitreous material is slightly softened at the firing temperature of the conductor paste composition.

When the conductive paste is printed and fired on the substrate 1, the reaction product formed at the time of firing is present as an adhering layer in a state containing potassium oxide or the like in the vitreous of the substrate 1. The reactant in which this potassium oxide is present is suppressed from becoming conductive, a highly reliable circuit board can be obtained, and the high-temperature leak phenomenon can be suitably suppressed.
(Second Embodiment)
In the second embodiment, a potassium compound is contained in a conductive paste composition (thick film conductor paste) that forms a thick wiring portion (thick film wiring portion) of a circuit board by firing, that is, silver. The present invention relates to a conductor paste composition (thick film conductor paste) obtained by dispersing a conductive metal powder containing an inorganic binder and an inorganic binder in an organic vehicle. The conductor paste composition of this embodiment is also suitable for use on a circuit board similar to that of the first embodiment.

  The circuit board of this embodiment also has the same configuration as that of FIG. On a substrate 1 made of glass material and alumina powder and electrically insulated, a thick film conductor paste comprising at least silver as a conductive metal and a potassium compound as a constituent is printed and fired on the substrate. The wiring part 2 is formed to obtain the circuit board 10. The potassium compound blended in the thick film conductor paste evaporates together with silver and the inorganic binder during firing, and is present in the reaction product as potassium oxide or the like.

  Accordingly, a reactant containing silver is attached and present in the vicinity of the periphery of the wiring portion 2, and potassium oxide or the like is present in the reactant. Potassium oxide or the like present in the reactant has an effect of inhibiting the conductivity of the reactant and suitably suppresses the high temperature leak phenomenon. In addition, the greater the amount of potassium oxide or the like in the reaction product, the greater the effect of suppressing conductivity. Here, as the conductive metal powder, silver powder conventionally used for thick film conductor pastes can be used, and may contain silver alone or, if necessary, palladium, platinum, gold, copper or the like. Moreover, you may use the powder which alloyed silver and the said metal previously.

Moreover, the average particle diameter of generally used silver powder is 0.5-7 μm, the specific surface area is 0.5-3 m ² / g, the average particle diameter of palladium, platinum powder, etc. is 0.1-1 μm, the ratio The surface area is 10 to 40 m ² / g. Any potassium compound may be used as long as it generates a glassy substance containing potassium oxide or potassium oxide during firing of the thick film conductor paste, such as potassium oxide or potassium carbonate, and an organic metal compound such as potassium gluconate is also used. it can.

  The required compounding amount of the potassium compound may be very small, and can be blended and dispersed directly in the thick film conductor paste as potassium oxide, or may be blended as a component of the glass frit in the inorganic binder. . Here, the necessary blending amount may be, for example, 0.01 parts by weight or more in terms of potassium oxide with respect to 100 parts by weight of the conductive metal powder. And what is 0.01-0.4 weight part with respect to 100 weight part of electroconductive metal powder is preferable.

  In the case of using a potassium compound as the organic metal compound, it can be dissolved in a solvent in an organic vehicle and blended, or can be adhered to the surface of a conductive metal powder such as silver powder. Here, in the conductor paste composition of the present embodiment, a bismuth compound, a ruthenium compound, or a nickel compound may be added to improve the solder characteristics.

  Any bismuth compound may be used as long as it generates bismuth oxide or bismuth oxide by firing, and organic compounds such as bismuth octylate can also be used. Moreover, you may mix | blend as a component of the glass frit in an inorganic binder. As the bismuth oxide powder, bismuth pentoxide pulverized to an average particle size of about 1 to 4 μm can be used.

  The content of these bismuth compounds is, in terms of bismuth oxide, 0.1% with respect to 100 parts by weight of the conductive metal powder in order to achieve both high temperature leakage characteristics (performance for suppressing high temperature leakage phenomenon) and solder characteristics. The amount is preferably 1 to 20 parts by weight. As the inorganic binder, a combination suitable for various properties required by the fired conductor can be selected from those conventionally used for thick film conductor pastes.

  Soldering properties of the conductor film after firing when using lead zinc borosilicate glass with high zinc content, vanadium compound, copper compound, manganese compound, chromium compound, etc. as inorganic binder powder of thick film conductor paste However, these blends tend to deteriorate the high temperature leak characteristics at the same time. However, in consideration of the solder characteristics, these can be blended as long as the high temperature leak characteristics allow.

As the ruthenium compound, a precursor such as ruthenium oxide or ruthenium octylate which generates ruthenium oxide during firing of the thick film conductor paste can be used. As the oxidized powder, ruthenium dioxide powder having an average particle diameter of 1 to 10 μm and a specific surface area of 10 to 50 m ² / g can be used. As the nickel compound, nickel oxide powder, nickel metal powder that generates nickel oxide during firing of the thick film conductor paste, or the like can be used. As the nickel metal powder, nickel metal powder having an average particle diameter of 0.1 to 2 μm and a specific surface area of 10 to 20 m ² / g can be used.

  The content of the ruthenium compound and nickel compound is preferably 0.01 to 3 parts by weight in terms of oxide with respect to 100 parts by weight of the conductive metal powder. As the organic vehicle, those conventionally used in thick film conductor pastes such as those obtained by dissolving a resin such as ethyl cellulose in an organic solvent such as terpineol or butyl carbitol can be used. What is necessary is just to select the compounding quantity of an organic vehicle so that printing suitability can be made into a preferable grade, such as a viscosity and fluidity | liquidity of a paste.

  According to the present embodiment, since various properties required for the conventional thick film conductor paste are ensured, the newly discovered high-temperature leakage characteristics can be satisfied. There is an effect of improving the electrical and electrical reliability. Next, specific examples showing the effect of each additive in the present embodiment will be described below with reference to FIGS. In addition, this example shows the effect of each said additive as a qualitative tendency to the last, and it calculates | requires in view of the compounding structure of various conductor paste compositions as quantitatively suitable content.

  FIG. 12 is a chart showing the compounds used in each conductor paste composition of this specific example. In this chart, bismuth compounds A and B, potassium compounds A to C, and glass frits A to E correspond to the compounds or mixtures shown in the right column, respectively, and potassium compound C is a glass containing glass frit containing potassium. The frit contains K2O. The numbers in parentheses of the glass frits A to E indicate% by weight.

  Moreover, the compounding ratio of each conductor paste composition of this specific example and various characteristics to be described later are shown in FIG. 13 (Samples 1 to 20) and FIG. 14 (Samples 21 to 31). In both figures, Ru oxide represents ruthenium oxide, and V represents vanadium oxide. Moreover, * in the figure indicates a value including the amount of potassium compound contained in the glass frit. Silver, palladium (Pd), and platinum are used as the conductive metal powder in an organic vehicle in which ethyl cellulose resin is dissolved in terpineol, and the bismuth compound, potassium compound, glass frit, and other inorganic substances shown in the chart of FIG. Using the binder powder, 31 kinds of thick film conductor pastes of Sample 1 to Sample 31 were prepared by mixing at a blending ratio shown in each chart of FIGS. 13 and 14 and kneading and dispersing. Samples 1, 3 and 30 are conductor paste compositions containing no potassium compound and are comparative examples.

Each thick film conductor paste thus produced was printed and dried on a 96% Al ₂ O ₃ insulating substrate, then baked twice at 850 ° C. for 10 minutes using a conveyor furnace, and a conductor film having a thickness of 9 to 13 μm. A thick film wiring board having the following characteristics was prepared. A screen having a total thickness of 325 mesh and 75 μm was used. The rosin flux is applied to the conductor surface of the thick-film wiring board thus manufactured, 1 mmφ solder balls made of 2Ag / 62Sn / 36Pb solder are placed on it, and after reflowing at 230 ° C. for 15 seconds, it spreads wet. The height of the solder balls was measured and used as a measure of solder wettability.

  Next, another thick film wiring board is immersed in rosin flux, and then immersed in 2Ag / 62Sn / 36Pb solder at 250 ° C. for 5 seconds, and then a solder plated copper wire having a diameter of 0.6 mm is applied to a 2 × 2 mm pad. After soldering with a soldering iron and leaving in a constant temperature bath at 150 ° C. for 1000 hours, the adhesion strength was measured by a peel test, and this was used as a measure of the solder adhesion strength.

  Furthermore, DC16V was applied to the counter electrode portion (electrode spacing 100 μm, electrode facing length 20 mm) of another thick film wiring board and left in a thermostatic chamber at 150 ° C. for 1000 hours. In this sample, a sample having a resistance value between electrodes of 100 MΩ or more was accepted, and the acceptance rate (%) was taken as a measure of high-temperature leakage characteristics. These results are also summarized in FIG. 13 and FIG. In addition, the solder wettability (unit mm) in both figures is better as the numerical value is smaller, and the solder adhesion strength (unit kg / 2 mm □) is better as the numerical value is larger.

  From comparison between Samples 1 and 3 (Comparative Example) and Sample 2, it can be seen that the high-temperature leak characteristics vary greatly (20% and 100%) depending on the presence or absence of a potassium compound. From comparison of Samples 4, 5, 6, 7, and 8, it can be seen that, as the amount of potassium compound contained increases, the high-temperature leakage characteristics improve, but conversely the solder characteristics decrease. Further, from comparison between Samples 6, 9, and 10, it can be seen that the high-temperature leakage characteristics are good regardless of the type of potassium compound, and the solder characteristics are not significantly different.

  From comparison between Sample 6 and Sample 11, it can be seen that the type of bismuth compound to be added has no relation to the high-temperature leakage characteristics and the solder characteristics. In addition, from comparison of Samples 6, 12, 13, and 14, it can be seen that the type of glass frit contained has nothing to do with high temperature leakage characteristics and solder characteristics. Further, from comparison between Samples 15, 16, and 17, it can be seen that the type of conductive metal powder has no relation to the high-temperature leak characteristics and the solder characteristics.

  From the comparison of Samples 18, 19, 20, and 21, it can be seen that if the amount of bismuth compound is too large, the solder wettability deteriorates. Further, from the comparison of samples 22, 23, 19, 24, and 25, it can be seen that the solder adhesion strength is improved as the amount of ruthenium oxide is increased, but the high-temperature leak characteristic is deteriorated when the amount is too large. From comparison of samples 26, 27, 19, 28, and 29, it can be seen that the greater the amount of nickel oxide, the better the solder adhesion strength.

Moreover, it can be seen from the comparison between Sample 30 (Comparative Example) and Sample 31 that the high-temperature leakage characteristics can be improved by the inclusion of the potassium compound even in the case of a thick film conductor paste containing vanadium oxide that easily causes leakage.
(Third embodiment)
In the first and second embodiments, a voltage is applied in a high-temperature atmosphere even when a reactant (a substance in which an inorganic binder and silver are chemically reacted) is present in the vicinity of the wiring portion due to firing of the conductor paste. In this case, the high temperature leakage phenomenon is suitably suppressed by preventing silver in the reaction product from becoming conductive.

  The third embodiment intends to suitably suppress the high-temperature leak phenomenon by making the conductive paste composition a composition that does not include a component that easily becomes conductive in the inorganic binder. The conductor paste composition of the present embodiment is also suitable for use on a circuit board and the like similar to those of the first and second embodiments. The circuit board of this embodiment also has the same configuration as that of FIG. 9, but the potassium oxide or the like does not exist between the wiring portions 2. The conductor paste composition of the present embodiment is a conductor paste composition (thick film conductor paste) in which a conductive metal powder containing silver and an inorganic binder composed of glass frit, which will be described later, are dispersed in an organic vehicle. is there. And the wiring part 2 is formed on the board | substrate 1 which consists of a glass substance and an alumina powder, and was electrically insulated by carrying out printing baking (for example, 700 degreeC or more), and the circuit board 10 is obtained.

  The inorganic binder composed of the glass frit or the like does not contain at least a compound containing an easily conductive element such as V, Cr, Mo, Mn, W, Cu, and Zn, and contains the easily conductive element. The glass frit does not contain a compound precursor. Therefore, such a glass frit evaporates when the conductor paste is fired, becomes a reaction product and adheres to the substrate, and is difficult to become conductive even when voltage and temperature are applied. For this reason, the insulation defect between wiring parts can be suppressed and a high temperature leak phenomenon can be suppressed suitably.

Here, as the conductive metal powder, the silver powder used in the conventional conductor paste can be used, and it may contain silver alone or, if necessary, palladium, platinum, gold, copper or the like. Moreover, you may use the powder which alloyed silver and the said metal previously. The average particle size of the silver powder used is 0.5 to 7 μm, the specific surface area is 0.5 to ³ m ² / g, the average particle size of palladium or platinum powder is 0.1 to 1 μm, and the specific surface area is 10 ˜40 m ² / g.

As the glass frit in the inorganic binder, a softening point of 700 to 950 ° C. and a B—Si—Al—Ca based highly softened glass and a B—Si—Pb based glass can be used. As described above, these glasses can suppress the evaporation of silver in the thick film conductor paste during firing. Here, as the glass former, for example, _{B 2 O 3 (10) -SiO} 2 (50) -Al 2 O 3 (15) -CaO (25) Glass is (in parenthesis wt%) can be used such as As the latter glass, for example, B ₂ O ₃ (10) -SiO ₂ (15) -PbO (75) glass (% by weight in parentheses) can be used, and each glass has an average particle diameter of 1 to 10 μm. What was crushed to the extent can be used. In addition, it is necessary to adjust a compounding quantity so that it may be suitable for the various characteristics which the conductor after baking needs.

  As other inorganic binders, a combination suitable for various properties required by the fired conductor can be selected from those conventionally used for thick film conductor pastes. As the organic vehicle, those conventionally used in thick film conductor pastes such as those obtained by dissolving a resin such as ethyl cellulose in an organic solvent such as terpineol or butyl carbitol can be used. What is necessary is just to select the compounding quantity of an organic vehicle so that printing suitability can be made into a preferable grade, such as a viscosity and fluidity | liquidity of a paste.

  A specific example of the third embodiment will be described below with reference to FIG. 15, but the present embodiment is not limited to this specific example. FIG. 15 is a chart showing the blending ratio and high-temperature leak characteristics of each conductor paste composition of this specific example. Here, the numerical value in the parentheses of each glass frit A, B is the blending ratio in each glass frit, and the unit is weight%. The softening points of the glass frits A and B are 790 ° C. and 380 ° C., respectively.

In an organic vehicle in which ethyl cellulose resin is dissolved in terpineol, conductive metal powder, glass frit and other inorganic binder powders are mixed at a blending ratio shown in FIG. Various types of thick film conductor pastes were prepared. Each thick film conductor paste thus produced was printed and dried on a 96% Al ₂ O ₃ insulating substrate, then baked twice at 850 ° C. for 10 minutes using a conveyor furnace, and a conductor film having a film thickness of 9 to 13 μm. A thick film wiring board having the following characteristics was prepared. A screen having a total thickness of 325 mesh and 75 μm was used.

  DC16V was applied to the counter electrode portion (electrode spacing 100 μm, electrode facing length 20 mm) of the thick film wiring board produced in this way, and left in a thermostatic chamber at 150 ° C. for 1000 hours. In this sample, a sample having a resistance value between electrodes of 100 MΩ or more was accepted, and the acceptance rate (%) was taken as a measure of high-temperature leakage characteristics. As shown in FIG. 15, the thick film wiring boards fabricated from Sample 40 to Sample 44 all showed good high temperature leakage characteristics.

By the way, it is good also as what further added the potassium compound as described in the said 2nd Embodiment to the conductor paste composition of this embodiment. In addition to the effects of the present embodiment, the effects of the potassium compound described above can be obtained.
(Fourth embodiment)
In the fourth embodiment, in the conductive paste composition, the amount of silver that evaporates during firing is reduced by reducing the silver content, and the high-temperature leak phenomenon is suitably suppressed. The conductor paste composition of the present embodiment is also suitable for use on the same circuit board as in the first to third embodiments.

  The circuit board of this embodiment also has the same configuration as that of FIG. 9, but the potassium oxide or the like does not exist between the wiring portions 2. The conductive paste composition of this embodiment is a conductive paste obtained by dispersing a conductive metal powder containing silver and an inorganic binder composed of at least one of glass frit and bismuth oxide in an organic vehicle at a predetermined ratio described later. It is a composition (thick film conductor paste).

  And the wiring part 2 is formed on the board | substrate 1 which consists of a glass substance and an alumina powder, and was electrically insulated by carrying out printing baking (for example, 700 degreeC or more), and the circuit board 10 is obtained. Here, the proportion of the conductive metal powder and the inorganic binder is preferably such that the content of the inorganic binder is 45 parts by weight or more with respect to 100 parts by weight of the conductive metal powder. If the amount is 45 parts by weight or less, the amount of silver deposited on the insulating substrate increases, and it is impossible to prevent an insulation failure between the wiring parts. The basis for this is shown in FIG.

  In FIG. 16, the horizontal axis indicates the glass weight part (wt%) as the content of the inorganic binder composed of at least one of glass frit and bismuth oxide with respect to 100 parts by weight of the conductive metal powder, and the left vertical axis indicates high temperature leakage. The cumulative failure rate (%) representing the occurrence rate of insulation failure due to the phenomenon is shown, and the resistance value (mΩ / □) of the wiring portion formed by firing the conductor paste composition is shown on the right vertical axis. .

  From FIG. 16, it can be seen that if the content of the inorganic binder is 45 parts by weight or more, the cumulative defect rate can be 0, and the high-temperature leak phenomenon can be suitably suppressed. If the amount is 45 parts by weight or less, the amount of silver deposited on the insulating substrate increases, and it is impossible to prevent an insulation failure between the wiring parts. Moreover, if it is 100 weight part or less, 5 mohm / square which is a desirable value of the wiring resistance of a general circuit board can be achieved. Therefore, if the content of the inorganic binder is 45 to 100 parts by weight, it is possible to achieve both good insulation between the wiring parts and good resistance characteristics of the wiring parts.

  Here, when the amount is 100 parts by weight or more, problems such as extremely high resistance value of the wiring part and deterioration of solderability occur, and the wiring part does not function. However, since the maximum addition amount of the inorganic binder may be 100 parts by weight or less depending on the type or configuration of the conductive metal powder used and the composition of the inorganic binder component, etc., for each thick film conductor paste composition to be used Need to optimize.

As the conductive metal powder, silver powder conventionally used in thick film conductor pastes can be used, and silver alone or, if necessary, palladium, platinum, gold, copper or the like may be contained. You may use the powder which alloyed silver and the said metal previously. Moreover, the average particle diameter of generally used silver powder is 0.5-7 μm, the specific surface area is 0.5-3 m ² / g, the average particle diameter of palladium, platinum powder, etc. is 0.1-1 μm, the ratio The surface area is 10 to 40 m ² / g.

  As the glass frit, lead borosilicate glass conventionally used for thick film conductor pastes can be used, and any composition can be used as long as the glass frit has a softening point of about 800 ° C. or less. As the glass frit powder, a powder obtained by pulverizing the frit to an average particle size of about 1 to 10 μm can be used. When such a glass frit is used, the evaporation of silver is suppressed by melting as described above.

  As the bismuth oxide powder, those obtained by pulverizing dibismuth pentoxide to an average particle size of about 1 to 4 μm can be used. Bismuth oxide is well-familiar with silver powder and melts at a temperature of about 800 ° C., so that the same effect as glass frit can be obtained. As the organic vehicle, those conventionally used in thick film conductor pastes such as those obtained by dissolving a resin such as ethyl cellulose in an organic solvent such as terpineol or butyl carbitol can be used. What is necessary is just to select the compounding quantity of an organic vehicle so that printing suitability can be made into a preferable grade, such as a viscosity and fluidity | liquidity of a paste.

  A specific example of the fourth embodiment will be described below with reference to FIG. 17, but the present embodiment is not limited to this specific example. FIG. 17 is a chart showing the blending ratio of each conductor paste composition of this specific example and various characteristics (resistance value, high temperature leakage characteristics) described later. Here, the numerical value in the parentheses of each glass frit A, B is the blending ratio in each glass frit, and the unit is weight%.

Conductive metal particle film, glass frit, and bismuth oxide powder are mixed in an organic vehicle in which ethyl cellulose resin is dissolved in terpineol at a mixing ratio shown in FIG. A conductor paste was prepared. Each thick film conductor paste thus produced was printed and dried on a 96% Al ₂ O ₃ insulating substrate, then baked twice at 850 ° C. for 10 minutes using a conveyor furnace, and a conductor film having a thickness of 9 to 13 μm. A thick film wiring board having the following characteristics was prepared. A screen having a total thickness of 325 mesh and 75 μm was used.

  The resistance value (unit mΩ / □) of the conductor wiring portion of the thick film wiring board thus produced was measured. Furthermore, DC16V was applied to the counter electrode portion (electrode spacing 100 μm, electrode facing length 20 mm) of another thick film wiring board and left in a thermostatic chamber at 150 ° C. for 1000 hours. In this sample, a sample having a resistance value between electrodes of 100 MΩ or more was accepted, and the acceptance rate (%) was taken as a measure of high-temperature leakage characteristics.

  These resistance values (unit: mΩ / □) and the results of the high temperature leakage characteristics are also summarized in FIG. In FIG. 17, the thick film wiring boards fabricated from Sample 50 to Sample 56 all showed good resistance values and high temperature leakage characteristics. In addition, since the sample 54 originally uses silver-Pd (palladium) having a high resistance value as the conductive metal powder, the resistance value is higher than the others, but it is different from the intention of the present embodiment. Absent. If the sample 54 is made of silver or silver-platinum, the resistance value can be set to the same level as that of other samples.

By the way, it is good also as what further added the potassium compound as described in the said 2nd Embodiment to the conductor paste composition of this embodiment. In addition to the effects of the present embodiment, the effects of the potassium compound described above can be obtained.
(Fifth embodiment)
The fifth embodiment provides a conductor paste composition that does not contain an inorganic binder that causes a reaction product that causes electrical conduction in the first place. The conductive paste composition of the present embodiment is also suitable for use on the same circuit board as in the first to fourth embodiments.

  The circuit board of this embodiment also has the same configuration as that of FIG. 9, but the potassium oxide or the like does not exist between the wiring portions 2. The conductor paste composition of this embodiment is a conductor paste composition (thick film conductor paste) composed of a conductive metal powder containing silver and an organic vehicle and does not contain an inorganic binder. And the wiring part 2 is formed on the board | substrate 1 which consists of a glass substance and an alumina powder, and was electrically insulated by carrying out printing baking (for example, 700 degreeC or more), and the circuit board 10 is obtained.

  Here, as described above, since silver adheres between the wiring portions 2 in an isolated state, conductivity does not occur, and the high-temperature leak phenomenon can be suitably suppressed. As the conductive metal powder, the silver powder conventionally used for thick film conductor pastes can be used, and silver alone or, if necessary, palladium, platinum, gold, copper or the like may be contained. You may use the powder which alloyed silver and the said metal previously.

Moreover, the average particle diameter of generally used silver powder is 0.5-7 μm, the specific surface area is 0.5-3 m ² / g, the average particle diameter of palladium, platinum powder, etc. is 0.1-1 μm, the ratio The surface area is 10 to 40 m ² / g. Adhesive strength auxiliary substances for ensuring adhesion to the insulating substrate include bismuth oxide, copper oxide, manganese oxide, nickel oxide, zinc oxide, chromium oxide, titanium oxide, and silicon oxide. The thing which consists of at least 1 among things can be used. The addition amount may be a minute amount that does not affect the insulation between the wiring portions.

  Specifically, as the bismuth oxide powder, bismuth pentoxide pulverized to an average particle size of about 1 to 4 μm can be used. As the copper oxide powder, a powder of cuprous oxide pulverized to an average particle size of about 0.5 to 3 μm can be used. Moreover, what grind | pulverized manganese dioxide, nickel oxide, zinc oxide, dichromium trioxide, titanium dioxide, and silicon dioxide to the average particle diameter of about 0.1-3 micrometers can be used.

  As the organic vehicle, those conventionally used in thick film conductor pastes such as those obtained by dissolving a resin such as ethyl cellulose in an organic solvent such as terpineol or butyl carbitol can be used. What is necessary is just to select the compounding quantity of an organic vehicle so that printing suitability can be made into a preferable grade, such as a viscosity and fluidity | liquidity of a paste. A specific example of the fifth embodiment will be described below with reference to FIG. 18, but the present embodiment is not limited to this specific example. FIG. 18 is a chart showing the blending ratio of each conductor paste composition of this specific example and various characteristics (solder adhesion strength, high temperature leakage characteristics) described later.

  In an organic vehicle in which ethylcellulose resin is dissolved in terpineol, conductive metal powder and adhesion strength auxiliary substances such as dibismuth pentoxide, copper zinc, manganese dioxide, nickel oxide, zinc oxide, dichromium trioxide, titanium dioxide, Silicon was mixed at a blending ratio shown in FIG. 18 and kneaded and dispersed to prepare conductor paste compositions of Sample 60 to Sample 70.

The thick film conductor paste thus produced is printed and dried on a 96% Al ₂ O ₃ insulating substrate, and then baked twice at 850 ° C. for 10 minutes at a peak using a conveyor furnace to form a conductor film having a thickness of 9 to 13 μm. A thick film wiring board having the above structure was produced. A screen having a total thickness of 325 mesh and 75 μm was used. The thick film wiring board thus fabricated is immersed in a rosin flux, then immersed in 2Ag / 62Sn / 36Pb solder at 250 ° C. for 5 seconds, and then a 2 × 2 mm pad with a 0.6 mm diameter solder-plated copper wire. Was soldered with a soldering iron, and the adhesion strength was measured by a peel test, which was used as a measure of the solder adhesion strength (unit: kg / 2 mm □).

  Furthermore, DC16V was applied to the counter electrode portion (electrode spacing 100 μm, electrode facing length 20 mm) of another thick film wiring board and left in a thermostatic chamber at 150 ° C. for 1000 hours. In this sample, a sample having a resistance value between electrodes of 100 MΩ or more was accepted, and the acceptance rate was taken as a measure of high-temperature leakage characteristics. As shown in FIG. 18, the thick film wiring boards fabricated from Sample 60 to Sample 70 all exhibit good high-temperature leakage characteristics, and it can be said that a certain degree of solder adhesion strength is exhibited by the adhesion strength auxiliary substance. .

  Even if there is no adhesion strength auxiliary substance, if the formed wiring part is covered with a sealant after baking the conductive paste composition, even if it does not show solder adhesion strength, the circuit board It can be fixed on the top. By the way, it is good also as what further added the potassium compound as described in the said 2nd Embodiment to the conductor paste composition of this embodiment. In addition to the effects of the present embodiment, the effects of the potassium compound described above can be obtained.

It is a graph which shows the relationship between high temperature leaving time and the insulation resistance value between wiring parts. It is a graph which shows the relationship between the electric field strength applied between wiring parts, and defect time. It is an expansion schematic diagram based on the TEM observation of the wiring part periphery vicinity on an insulated substrate. It is a schematic diagram which shows the board | substrate (delta) in verification experiment B2. It is a schematic diagram which shows the board | substrate (epsilon) in verification experiment B2. It is a schematic diagram which shows the opposing state of the board | substrate (delta) and the board | substrate (epsilon) in verification experiment B2. It is a schematic diagram which shows the setting state of the distance between board | substrates of the board | substrate (delta) and board | substrate (epsilon) in verification experiment B3. It is a graph which shows the relationship between the adhesion amount of silver and the said insulation failure time in verification experiment B3. It is sectional drawing which shows the structure of the circuit board based on this invention. It is explanatory drawing which shows an example of the manufacturing method of the circuit board using the insulating paste composition of 1st Embodiment of this invention. It is explanatory drawing which shows the other example of the manufacturing method of the circuit board using the insulating paste composition of the said 1st Embodiment. It is a graph which shows the compound used for each conductor paste composition of the specific example in 2nd Embodiment of this invention. It is a table | surface which shows the compounding ratio and various characteristics of the samples 1-20 among each conductor paste composition of the specific example in the said 2nd Embodiment. It is a chart which shows the compounding ratio and various characteristics of samples 21-31 among each conductor paste composition of the specific example in the said 2nd Embodiment. It is a graph which shows the compounding ratio and high temperature leak characteristic of each conductor paste composition of the specific example in 3rd Embodiment of this invention. It is a graph which shows the relationship between the glass weight part in the conductor paste composition in 4th Embodiment of this invention, the incidence rate of an insulation defect, and wiring part resistance value. It is a chart which shows the compounding ratio and various characteristics of each conductor paste composition of the specific example in the said 4th Embodiment. It is a graph which shows the compounding ratio and various characteristics of each conductor paste composition of the specific example in 5th Embodiment of this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Board | substrate, 2 ... Wiring part, 3 ... Insulating paste composition, 10 ... Circuit board, A1 ... Alumina particle, A2 ... Glass substance, A3 ... Silver particle, a ... Thick film conductor paste, b ... Insulating substrate, c ... spacer, d ... gap, e ... gold wiring part, f ... insulating substrate, g ... distance between substrate δ and substrate ε, h ... between gold wiring parts.

Claims (10)

In a conductive paste composition in which a conductive metal powder containing silver and an inorganic binder are dispersed in an organic vehicle, a potassium compound is contained, and the content of the potassium compound is converted to potassium oxide. , 0.01 to 0.4 parts by weight with respect to 100 parts by weight of the conductive metal powder, and the inorganic binder has a softening point of 700 to 950 ° C. and high softening of B-Si-Al-Ca system A conductive paste composition, which is a glass frit.
In a conductive paste composition in which a conductive metal powder containing silver and an inorganic binder are dispersed in an organic vehicle, a potassium compound is contained, and the content of the potassium compound is converted to potassium oxide. The conductive paste composition is characterized by being 0.01 to 0.4 parts by weight with respect to 100 parts by weight of the conductive metal powder, and the inorganic binder is a B—Si—Pb glass frit . In a conductive paste composition in which a conductive metal powder containing silver and an inorganic binder are dispersed in an organic vehicle, a potassium compound is contained, and the content of the potassium compound is converted to potassium oxide. , 0.01 to 0.4 parts by weight with respect to 100 parts by weight of the conductive metal powder, and the inorganic binder has a softening point of 700 to 950 ° C. and high softening of B-Si-Al-Ca system A conductive paste composition, which is a mixture of two types of glass frit composed of glass frit and B-Si-Pb glass frit . A conductor paste composition for forming the wiring portion of a substrate having a wiring portion containing silver,
A conductive metal powder containing silver and an inorganic binder are dispersed in an organic vehicle,
Contains potassium compounds,
The content of the potassium compound is 0.01 to 0.4 parts by weight in terms of potassium oxide with respect to 100 parts by weight of the conductive metal powder,
The said inorganic binder is a conductive paste composition characterized by the softening point being 700-950 degreeC, and a B-Si-Al-Ca-type highly soft glass frit . A conductor paste composition for forming the wiring portion of a substrate having a wiring portion containing silver,
A conductive metal powder containing silver and an inorganic binder are dispersed in an organic vehicle,
Contains potassium compounds,
The content of the potassium compound is 0.01 to 0.4 parts by weight in terms of potassium oxide with respect to 100 parts by weight of the conductive metal powder,
The conductive paste composition, wherein the inorganic binder is B-Si-Pb glass frit . A conductor paste composition for forming the wiring portion of the substrate having a wiring portion containing silver,
A conductive metal powder containing silver and an inorganic binder are dispersed in an organic vehicle,
Contains potassium compounds,
The content of the potassium compound is 0.01 to 0.4 parts by weight with respect to 100 parts by weight of the conductive metal powder in terms of potassium oxide,
The inorganic binder is a mixture of two kinds of glass frit having a softening point of 700 to 950 ° C. and comprising a B-Si-Al-Ca-based highly softened glass frit and a B-Si-Pb-based glass frit. A conductor paste composition. A circuit board having a wiring part containing silver, wherein the wiring part is formed by firing the conductor paste composition according to any one of claims 1 to 6 . The circuit board according to claim 7 , wherein an interval between the wiring portions is 500 μm or less. The circuit board according to claim 8 , wherein the board has a portion heated at a temperature of 700 ° C. or more. The circuit board according to claim 8 , wherein the substrate is an alumina substrate.

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