JP4544424B2 - Removal method of sealing material for electrical and electronic parts protection - Google Patents
Removal method of sealing material for electrical and electronic parts protection Download PDFInfo
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- JP4544424B2 JP4544424B2 JP2005165765A JP2005165765A JP4544424B2 JP 4544424 B2 JP4544424 B2 JP 4544424B2 JP 2005165765 A JP2005165765 A JP 2005165765A JP 2005165765 A JP2005165765 A JP 2005165765A JP 4544424 B2 JP4544424 B2 JP 4544424B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
Description
本発明は、封止材としてのフッ素ゲルで保護された電気電子部品から該封止材を除去する方法であって、電気電子部品の封止材以外の部材を損傷することなく、封止材のみを除去することができる電気電子部品保護用封止材の除去方法に関する。 The present invention relates to a method of removing an encapsulant from an electrical and electronic component protected with a fluorine gel as an encapsulant, and the encapsulant without damaging members other than the encapsulant of the electrical and electronic component It is related with the removal method of the sealing material for electrical and electronic component protection which can remove only.
従来、ダイオード、トランジスタ、ＩＣ、ＬＳＩ等の半導体素子などの電気電子部品を保護する封止材の一つとしてフッ素ゲルが使用されている（例えば特許文献１、２及び３参照）。 Conventionally, fluorine gel is used as one of sealing materials for protecting electrical and electronic parts such as semiconductor elements such as diodes, transistors, ICs, and LSIs (see, for example, Patent Documents 1, 2, and 3).
ところで、封止材を施工後に電気電子部品を検査する必要がある場合や、市場において不具合が発生した機器を回収し不具合の原因を解析する場合には、封止材のみを除去し、内部の電気電子部品の検査をすることが必要になる。 By the way, when it is necessary to inspect electrical and electronic parts after installing the sealing material, or when collecting the equipment that has failed in the market and analyzing the cause of the failure, remove only the sealing material, It is necessary to inspect electrical and electronic parts.
そこで、封止材として使用されるフッ素ゲルを溶解する方法としては、硫酸、硝酸、発煙硫酸、トリフロロ酢酸、フッ酸等の強酸、水酸化ナトリウム、水酸化カリウム等の強塩基、ブチルアミン等のアミン類による溶解が可能である。 Therefore, as a method of dissolving the fluorine gel used as a sealing material, strong acid such as sulfuric acid, nitric acid, fuming sulfuric acid, trifluoroacetic acid, and hydrofluoric acid, strong base such as sodium hydroxide and potassium hydroxide, and amine such as butylamine Can be dissolved.
しかしながら、上記電気電子部品は、半導体シリコン、アルミ等の金属類、ガラス類、エポキシ樹脂，ポリブチレンテレフタレート（ＰＢＴ），ポリフェニレンサルファイド（ＰＰＳ）等の樹脂類などにより構成されており、これらの部材は上記試薬により容易に腐食、溶解してしまう。そのため、上記試薬を本用途にて使用することは困難であった。 However, the electric and electronic parts are composed of metals such as semiconductor silicon and aluminum, glasses, resins such as epoxy resin, polybutylene terephthalate (PBT), polyphenylene sulfide (PPS), and the like. The above reagents easily corrode and dissolve. Therefore, it was difficult to use the reagent for this purpose.
このような問題を解決する手段として、例えば下記一般式（１）
［Ｒ1Ｒ2Ｒ3Ｒ4Ｎ］+・Ｘ- （１）
（式中、Ｒ1，Ｒ2，Ｒ3及びＲ4は、独立に置換又は非置換の一価炭化水素基であり、ＸはＯＨ、Ｆ、Ｃｌ又はＢｒである。）
で表わされる化合物を用いて封止材であるフッ素ゲルを溶解する方法が提案されている（特許文献４参照）。
As a means for solving such a problem, for example, the following general formula (1)
[R 1 R 2 R 3 R 4 N] + · X − (1)
(In the formula, R 1 , R 2 , R 3 and R 4 are each independently a substituted or unsubstituted monovalent hydrocarbon group, and X is OH, F, Cl or Br.)
The method of melt | dissolving the fluorine gel which is a sealing material using the compound represented by is proposed (refer patent document 4).
しかしながら、この方法においては、上記式（１）の化合物を封止材に接触させる時間やその時の加熱温度、該化合物の濃度等を適切に調整しないと、上記電気電子部品を損傷することがあった。即ち、上記式（１）の化合物を用いた溶解方法は、適当な溶解条件に調節するための操作が煩雑であるという問題があった。 However, in this method, the electric and electronic parts may be damaged unless the time for bringing the compound of the formula (1) into contact with the encapsulant, the heating temperature at that time, the concentration of the compound, etc. are appropriately adjusted. It was. That is, the dissolution method using the compound of the formula (1) has a problem that the operation for adjusting to an appropriate dissolution condition is complicated.
本発明は、上記事情に鑑みなされたもので、電気電子部品を保護する封止材としてのフッ素ゲルを除去する際に、電気電子部品の封止材以外の部材を損傷することなく、封止材のみを簡便に除去することができる電気電子部品保護用封止材の除去方法を提供することを目的とする。 The present invention has been made in view of the above circumstances, and when removing fluorine gel as a sealing material for protecting electrical and electronic parts, sealing without damaging members other than the sealing material for electrical and electronic parts. An object of the present invention is to provide a method for removing a sealing material for protecting electrical and electronic parts, which can easily remove only the material.
本発明者は、上記目的を達成するため鋭意研究を重ねた結果、フッ素ゲル封止材で保護された電気電子部品から該封止材を除去する際、フッ素ゲル封止部をフッ素系溶剤に浸漬して特定温度範囲で加熱することにより、フッ素ゲルが速やかに溶解し、電気電子部品の封止材以外の部材を損傷することなく、封止材のみを簡便かつ効率良く除去することができることを知見し、本発明をなすに至った。 As a result of intensive studies to achieve the above object, the present inventor, when removing the sealing material from the electrical and electronic parts protected by the fluorine gel sealing material, the fluorine gel sealing portion is used as a fluorine-based solvent. By immersing and heating in a specific temperature range, the fluorine gel dissolves quickly, and only the sealing material can be removed easily and efficiently without damaging members other than the sealing material of the electrical and electronic parts. As a result, the present invention has been made.
従って、本発明は、フッ素ゲル封止材で保護された電気電子部品から該封止材を除去する方法であって、該フッ素ゲル封止部を４０℃以上２５０℃以下の加熱下でハイドロフルオロカーボン、ハイドロフルオロエーテル及びパーフルオロカーボンから選ばれる沸点が１００〜２５０℃で常温で液体のフルオロカーボンの１種又は２種以上のみからなるフッ素系溶剤に浸漬してフッ素ゲルを溶解させ、除去することを特徴とする電気電子部品保護用封止材の除去方法を提供する。 Accordingly, the present invention is a method for removing the sealing material from an electrical / electronic component protected with a fluorine gel sealing material, wherein the fluorine gel sealing part is heated to 40 ° C. or more and 250 ° C. or less under hydrofluorocarbon. In addition, the fluorogel is dissolved and removed by dipping in a fluorine-based solvent consisting of only one or two or more fluorocarbons which are liquid at room temperature at a normal temperature of 100 to 250 ° C., selected from hydrofluoroethers and perfluorocarbons A method for removing a sealing material for protecting electric and electronic parts is provided.
本発明の電気電子部品保護用封止材の除去方法によれば、封止材以外の電気電子部品の部材を損傷することなく、封止材のみを面倒な条件設定等を行うことなく簡便に除去することができる。 According to the method for removing a sealing material for protecting electrical and electronic parts of the present invention, the sealing material alone is easily damaged without damaging conditions and the like without damaging members of the electrical and electronic parts other than the sealing material. Can be removed.
以下、本発明を更に詳細に説明する。
本発明の電気電子部品保護用封止材の除去方法は、フッ素ゲル封止材で保護された電気電子部品から封止材を除去する方法であって、フッ素ゲル封止部をフッ素系溶剤に浸漬して特定温度条件で加熱し、フッ素ゲルを溶解させて除去するものである。
Hereinafter, the present invention will be described in more detail.
The method for removing a sealing material for electrical and electronic component protection according to the present invention is a method for removing a sealing material from an electrical and electronic component protected with a fluorine gel sealing material, wherein the fluorine gel sealing portion is used as a fluorine-based solvent. It is immersed and heated under specific temperature conditions to dissolve and remove the fluorine gel.
この場合、本発明の除去方法に用いられるフッ素系溶剤は、封止材としてのフッ素ゲルを溶解する常温で液体のフルオロカーボンであれば、その種類は特に限定されるものではないが、中でもハイドロフルオロカーボンやハイドロフルオロエーテル及びパーフルオロカーボンが好ましい。また、その沸点は４０℃〜２５０℃、特に１００℃〜２５０℃のものが好ましい。このようなフッ素系溶剤の市販品としては、例えばノベックＨＦＥ−７１００、ノベックＨＦＥ−７２００（住友スリーエム社製商品名）、ＰＦ−５０８０（住友スリーエム社製商品名）、フロリナートＦＣ７７、フロリナートＦＣ７０（住友スリーエム社製商品名）、アサヒクリンＡＫ−２２５（旭硝子社製商品名）、ＨＦＭＸ（三菱商事社商品名：ヘキサフルオロメタキシレン）等が挙げられる。中でも、加熱により溶解速度を向上させる（詳細は後述）ことから、沸点が比較的高いＦＣ７０やＨＦＭＸが好ましい。なお、フッ素系溶剤としては、これらを１種単独で又は２種以上を適宜組合わせて使用することができる。 In this case, the fluorine-based solvent used in the removal method of the present invention is not particularly limited as long as it is a fluorocarbon that is liquid at room temperature and dissolves the fluorine gel as a sealing material. And hydrofluoroether and perfluorocarbon are preferred. The boiling point is preferably 40 ° C to 250 ° C, particularly 100 ° C to 250 ° C. Examples of such commercially available fluorine-based solvents include Novec HFE-7100, Novec HFE-7200 (trade name, manufactured by Sumitomo 3M), PF-5080 (trade name, manufactured by Sumitomo 3M), Fluorinert FC77, and Fluorinert FC70 (Sumitomo). 3M brand name), Asahi Klin AK-225 (Asahi Glass brand name), HFMX (Mitsubishi Corporation brand name: hexafluorometaxylene), and the like. Among them, FC70 and HFMX having a relatively high boiling point are preferable because the dissolution rate is improved by heating (details will be described later). In addition, as a fluorine-type solvent, these can be used individually by 1 type or in combination of 2 or more types as appropriate.
本発明の除去方法においては、フッ素ゲル封止部をフッ素系溶剤に浸漬し、特定温度範囲に加熱することで、上記フッ素系溶剤へのフッ素ゲルの溶解速度を向上させることができ、封止材を速やかに溶解、除去することができる。加熱温度としては、４０℃以上２５０℃以下であり、特に１００℃以上２５０℃以下がより好ましい。４０℃未満であると、フッ素系溶剤へフッ素ゲルを溶解させるのに多くの時間が必要になってしまい、作業性が悪くなり、２５０℃より高いと加熱により電気電子部品を構成する樹脂類を損傷する恐れがある。 In the removal method of the present invention, the fluorine gel sealing part is immersed in a fluorine-based solvent and heated to a specific temperature range, whereby the dissolution rate of the fluorine gel in the fluorine-based solvent can be improved. The material can be quickly dissolved and removed. The heating temperature is 40 ° C. or higher and 250 ° C. or lower, and more preferably 100 ° C. or higher and 250 ° C. or lower. When the temperature is lower than 40 ° C, it takes a lot of time to dissolve the fluorine gel in the fluorine-based solvent, and the workability deteriorates. When the temperature is higher than 250 ° C, the resins constituting the electric / electronic parts are heated. Risk of damage.
更に、加熱温度は、使用するフッ素系溶剤の沸点以下とすることが安全上好ましく、従って、フッ素系溶剤としては、その沸点が上記の好ましい加熱温度範囲内であるものが好ましく使用される。 Furthermore, it is preferable from the viewpoint of safety that the heating temperature is not higher than the boiling point of the fluorinated solvent to be used. Therefore, as the fluorinated solvent, those having a boiling point within the above-mentioned preferable heating temperature range are preferably used.
本発明の除去方法において、フッ素系溶剤の使用量は、除去する封止剤（フッ素ゲル）に対して体積比で３倍以上２０倍以下が好ましく、とりわけ５倍以上１０倍以下がより好ましい。フッ素系溶剤の使用量が３倍未満の場合、フッ素ゲルがフッ素系溶剤により膨潤するだけで溶解しない可能性がある。一方、２０倍より多い場合は取り扱いが煩雑になり、かつ経済的に不利である。 In the removal method of the present invention, the amount of the fluorine-based solvent used is preferably 3 times to 20 times, and more preferably 5 times to 10 times, by volume with respect to the sealing agent (fluorine gel) to be removed. When the amount of the fluorinated solvent used is less than 3 times, the fluorinated gel may be swollen only by the fluorinated solvent and not dissolved. On the other hand, when it is more than 20 times, handling becomes complicated and it is economically disadvantageous.
また、本発明において、電気電子部品のフッ素ゲル封止部をフッ素系溶剤に浸漬させる方法としては、フッ素ゲル封止部すべてがフッ素系溶剤に浸漬すれば特に制限されず、フッ素ゲル封止部を有する電気電子部品全体をフッ素系溶剤に浸漬させても、あるいは、電気電子部品のフッ素ゲル封止部を含む一部分を浸漬させてもよい。 In the present invention, the method of immersing the fluorine gel sealing part of the electric / electronic component in the fluorine-based solvent is not particularly limited as long as all the fluorine gel sealing part is immersed in the fluorine-based solvent. The entire electric / electronic component having the above may be immersed in a fluorine-based solvent, or a part of the electric / electronic component including the fluorine gel sealing portion may be immersed.
フッ素系溶剤にフッ素ゲル封止部を浸漬させる時間は、フッ素系溶剤及びフッ素ゲルの種類や量等により異なり、適宜調整されるが、通常１時間から４日間である。とりわけ、作業性の点から１時間〜２４時間とするのが好ましく、加熱温度を上記のように調整することにより浸漬時間の調節は可能である。なお、フッ素系溶剤に浸漬して加熱後は、電気電子部品を取り出し、通常の方法で乾燥させればよく、これにより電気電子部品を損傷することなく封止剤を除去することができる。 The time for immersing the fluorine gel sealing part in the fluorine-based solvent varies depending on the type and amount of the fluorine-based solvent and the fluorine gel, and is appropriately adjusted, but is usually 1 hour to 4 days. In particular, it is preferably 1 to 24 hours from the viewpoint of workability, and the immersion time can be adjusted by adjusting the heating temperature as described above. In addition, after being immersed in a fluorine-type solvent and heating, an electrical / electronic component should just be taken out and dried by a normal method, and this can remove a sealing agent, without damaging an electrical / electronic component.
このような本発明の封止剤の除去方法においては、電気電子部品を保護する封止材としてのフッ素ゲルのＪＩＳ Ｋ２２２０稠度試験法（１／４コーン使用）で規定される針入度が５０以上１５０以下、特に６０以上１２０以下であることが好ましい。針入度が５０未満であると、フッ素系溶剤にフッ素ゲルを溶解させるのが困難となる場合があり、一方、１５０より大きいと流れ性が大きく、電気電子部品を保護するという用途に使用するのが難しい場合がある。 In such a method for removing a sealant of the present invention, the penetration degree specified by the JIS K2220 consistency test method (using 1/4 cone) of fluorine gel as a sealant for protecting electrical and electronic parts is 50. It is preferably 150 or more and particularly preferably 60 or more and 120 or less. When the penetration is less than 50, it may be difficult to dissolve the fluorine gel in the fluorinated solvent. On the other hand, when the penetration is greater than 150, the flowability is high, and it is used for the purpose of protecting electrical and electronic parts. It can be difficult.
本発明の封止材の除去方法は、フッ素ゲル封止剤、特に主鎖にパーフロロポリエーテル構造を有するフッ素ゲルの除去に有効である。
上記パーフロロポリエーテル構造を有するフッ素ゲルとしては、下記一般式で表わされパーフロロポリエーテル構造を有するものが好ましい。
The method for removing a sealing material of the present invention is effective for removing a fluorine gel sealant, particularly a fluorine gel having a perfluoropolyether structure in the main chain.
As the fluorine gel having a perfluoropolyether structure, those having a perfluoropolyether structure represented by the following general formula are preferable.
（ＸはＦ又はＣＦ3基、ｐ，ｑ，ｒはそれぞれｐ≧１、ｑ≧１、２≦ｐ＋ｑ≦２００、特に２≦ｐ＋ｑ≦１５０で、０≦ｒ≦６の整数である。）
（ｓ，ｔ，ｕはそれぞれｓ≧０、ｔ≧０、０≦ｓ＋ｔ≦２００、特に２≦ｓ＋ｔ≦１５０で、０≦ｕ≦６の整数である。）
（ＹはＦ又はＣＦ3基、ｖ，ｗはそれぞれ１≦ｖ≦２０、１≦ｗ≦２０の整数である。）
（ｚは１≦ｚ≦１００の整数である。）
(X is an F or CF 3 group, and p, q, and r are p ≧ 1, q ≧ 1, 2 ≦ p + q ≦ 200, particularly 2 ≦ p + q ≦ 150, and 0 ≦ r ≦ 6)
(S, t, and u are integers of s ≧ 0, t ≧ 0, 0 ≦ s + t ≦ 200, particularly 2 ≦ s + t ≦ 150, and 0 ≦ u ≦ 6.)
(Y is an F or CF 3 group, and v and w are integers of 1 ≦ v ≦ 20 and 1 ≦ w ≦ 20, respectively.)
(Z is an integer of 1 ≦ z ≦ 100.)
上記主鎖にパーフロロポリエーテル構造を有するフッ素ゲルとしては、具体的には上記特許文献１、特許文献２及び特許文献３記載の硬化性組成物の硬化物等が挙げられる。また市販品としては、ＳＩＦＥＬ８０７０（信越化学工業社製商品名）の硬化物等が挙げられる。 Specific examples of the fluorine gel having a perfluoropolyether structure in the main chain include cured products of the curable compositions described in Patent Document 1, Patent Document 2, and Patent Document 3. Moreover, as a commercial item, the hardened | cured material of SIFEL8070 (Shin-Etsu Chemical Co., Ltd. brand name) etc. are mentioned.
本発明の除去方法の電気電子部品としては、ダイオード、トランジスタ、ＩＣ、ＬＳＩ等の半導体素子等が挙げられる。 Examples of the electrical / electronic component of the removal method of the present invention include semiconductor elements such as diodes, transistors, ICs, and LSIs.
以下、実施例及び比較例を示して本発明を具体的に説明するが、本発明は下記実施例に制限されるものではない。 EXAMPLES Hereinafter, although an Example and a comparative example are shown and this invention is demonstrated concretely, this invention is not restrict | limited to the following Example.
［実施例１］
図１の縦断面図に示す電子部品を用いた。図１の電子部品は、ポリブチレンテレフタレート（ＰＢＴ）製パッケージ１内で、ガラス台座２上に載置されたシリコン製半導体素子３が配設されており、且つこの半導体素子３はアルミニウム製ボンディングワイヤ４を介してニッケルメッキ製インサートピン５に半田６により接続されている。そして、上記半導体素子３の上面がフッ素ゲル７（ＳＩＦＥＬ８０７０（信越化学工業社製））により封止されている。
[Example 1]
The electronic component shown in the longitudinal sectional view of FIG. 1 was used. The electronic component shown in FIG. 1 includes a silicon semiconductor element 3 placed on a glass pedestal 2 in a polybutylene terephthalate (PBT) package 1, and the semiconductor element 3 is made of an aluminum bonding wire. 4 is connected to a nickel-plated
なお、この場合、フッ素ゲル７のＪＩＳ Ｋ２２２０稠度試験法（１／４コーン使用）で規定される針入度は７０であった。 In this case, the penetration of the fluorogel 7 as defined by the JIS K2220 consistency test method (using 1/4 cone) was 70.
上記電子部品を、上記フッ素ゲルの体積に対して５倍のＨＦＭＸ（三菱商事社商品名、沸点１１６℃）に浸漬させ、１１５℃にて４時間加熱した。その後、上記電子部品を取り出し、室温下で乾燥させた。 The electronic component was immersed in HFMX (trade name of Mitsubishi Corporation, boiling point: 116 ° C.) 5 times the volume of the fluorine gel, and heated at 115 ° C. for 4 hours. Thereafter, the electronic component was taken out and dried at room temperature.
上記操作により、上記電子部品において、構成する封止材以外の部材には損傷がなく、電気的にも正常に作動し、封止材であるフッ素ゲルのみが溶解、除去されたことが確認された。 By the above operation, in the electronic component, it was confirmed that the members other than the constituent sealing material were not damaged and operated normally electrically, and only the fluorine gel as the sealing material was dissolved and removed. It was.
［実施例２］
実施例１のＨＦＭＸをＦＣ７０（住友スリーエム社製 沸点２１５℃）に変更し、１５０℃にて３時間加熱した以外は実施例１と同様の操作を行い、電気電子部品を処理した。
[Example 2]
The electrical and electronic parts were processed in the same manner as in Example 1 except that HFMX in Example 1 was changed to FC70 (boiling point 215 ° C., manufactured by Sumitomo 3M Limited) and heated at 150 ° C. for 3 hours.
上記処理後の電子部品は、実施例１と同様に、構成する封止材以外の部材には損傷がなく、電気的にも正常に作動し、封止材であるフッ素ゲルのみが溶解、除去されたことが確認された。 As in Example 1, the electronic component after the above treatment is not damaged in the members other than the constituent sealing material, operates normally electrically, and only the fluorine gel as the sealing material is dissolved and removed. Was confirmed.
［比較例１］
実施例１と同様の電子部品を濃硫酸に浸漬し、６０℃にて１時間加熱した。その後、取り出して水洗し外観を確認したところ、フッ素ゲルは溶解していることが確認された。しかしながら、パッケージ１に溶解が進行しており、また、ボンディングワイヤ４は断線していた。その結果、電子部品は作動しなかった。
[Comparative Example 1]
An electronic component similar to that in Example 1 was immersed in concentrated sulfuric acid and heated at 60 ° C. for 1 hour. Then, when it took out and washed with water and the external appearance was confirmed, it was confirmed that the fluorine gel is melt | dissolving. However, dissolution has progressed in the package 1 and the
［比較例２］
実施例１と同様の電子部品を２０質量％フッ酸水溶液に２５℃にて１時間浸漬した。その後、取り出して水洗し、外観を確認したところ、フッ素ゲルは溶解していることが確認された。しかしながら、ガラス台座２及びボンディングワイヤ４に溶解が進行していた。更に、上記台座２の溶解によるストレスにより上記ボンディングワイヤ４が半田部から断線したため、電子部品は作動しなかった。
[Comparative Example 2]
An electronic component similar to that of Example 1 was immersed in a 20% by mass hydrofluoric acid aqueous solution at 25 ° C. for 1 hour. Then, when it took out, washed with water, and the external appearance was confirmed, it was confirmed that the fluorine gel is melt | dissolving. However, dissolution proceeded to the glass pedestal 2 and the
［比較例３］
実施例１と同様の電子部品をテトラブチルアンモニウムフロライドの３ｍｏｌ／Ｌテトラヒドロフラン／ヘキサフルオロメタキシレン（体積比１／１）溶液に浸漬し、６０℃にて５時間加熱した。その後、上記電子部品を取り出し、テトラヒドロフラン及びヘキサフルオロメタキシレンにて洗浄し、外観を確認したところ、フッ素ゲルは溶解していることが確認された。しかしながら、ボンディングワイヤ４の一部が溶解し、断線していた。その結果、電子部品は作動しなかった。
[Comparative Example 3]
An electronic component similar to that in Example 1 was immersed in a 3 mol / L tetrahydrofuran / hexafluorometaxylene (volume ratio 1/1) solution of tetrabutylammonium fluoride and heated at 60 ° C. for 5 hours. Thereafter, the electronic component was taken out, washed with tetrahydrofuran and hexafluorometaxylene, and the appearance was confirmed. As a result, it was confirmed that the fluorine gel was dissolved. However, a part of the
１ パッケージ（ＰＢＴ）
２ ガラス台座
３ 半導体素子（シリコン）
４ ボンディングワイヤ（アルミニウム）
５ インサートピン（ニッケルメッキ）
６ 半田
７ 封止材（フッ素ゲル）
1 Package (PBT)
2 Glass base 3 Semiconductor element (silicon)
4 Bonding wire (aluminum)
5 Insert pin (nickel plating)
6 Solder 7 Sealing material (fluorine gel)
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