JP4506460B2 - Method for manufacturing organic electroluminescence device and electronic device - Google Patents

Description

The present invention relates to a device manufacturing method, a device, an organic electroluminescent device manufacturing method, an organic electroluminescent device, and an electronic apparatus .

For manufacturing a device having a conductive pattern used in an electronic circuit or an integrated circuit, a sputtering method, a vacuum deposition method, or the like is used. In these methods, after a metal conductive material such as Al or Cu is formed on the surface of the wiring board, a photosensitive material such as a resist is applied on the board on which the conductive film has been previously formed by photolithography. . And after irradiating light through the mask in which the circuit pattern was formed, it develops and etches a conductive film according to a resist pattern, and forms a conductive pattern of a thin film.
The conductive pattern formed by such a method is also applied to, for example, an organic electroluminescence (hereinafter referred to as EL) display panel as an electro-optical device (see, for example, Patent Document 1).

The organic EL display panel described in Patent Document 1 includes a TFT drive substrate having a TFT as a pixel switching circuit, and the TFT drive substrate has a transparent substrate as a basic configuration. On one surface of the transparent substrate, TFTs, scanning lines, signal lines and other wiring (conductive patterns), other electric elements, and the like are formed.
In addition, a method of forming metal wiring by thickly depositing metal fine particles using an ink jet method has been proposed (see, for example, Non-Patent Document 1). As described above, when the ink jet method is used, the metal fine particles are baked at a high temperature in order to reduce the resistance, thereby obtaining a metal wiring having good conductivity.
Japanese Patent Laid-Open No. 2003-347048 “Nikkei Electronics”, January 16, 2004, p. 102

  By the way, the organic EL element provided in the organic EL display panel is current-driven, and it is necessary to flow a large amount of current in order to obtain a high-luminance image particularly on a large screen. However, if a large amount of current is applied to a device or organic EL element in which a conductive pattern such as Al or Cu is formed by the sputtering method or the like, a large load is applied to the conductive pattern at the above film thickness, resulting in breakage or damage. Therefore, it is difficult to supply a sufficient current. In the ink jet method, the metal fine particles must be fired at a high temperature in order to reduce the resistance. However, it is difficult to raise the firing temperature due to the heat resistance of a semiconductor element such as a TFT element.

  The present invention has been made in order to solve the above-described problems, and can provide a device manufacturing method, a device, and an organic electroluminescence device manufacturing method capable of ensuring a sufficient thickness for flowing a large amount of current. It is another object of the present invention to provide an organic electroluminescence device.

In order to achieve the above object, the present invention provides the following means.
The device manufacturing method of the present invention is a device manufacturing method including a conductive pattern formed on a substrate, the step of forming the conductive pattern on the substrate, and on the substrate including the conductive pattern. A step of forming an insulating layer, a step of forming an opening at a position corresponding to the conductive pattern with respect to the insulating layer, and a step of laminating a plating metal on the opening by electroless plating. It is characterized by.

  In the device manufacturing method according to the present invention, after forming a conductive pattern on a substrate, an insulating layer is further formed, and an opening is formed at a position corresponding to the conductive pattern. And a plating metal is laminated | stacked on the conductive pattern exposed from this opening part. That is, by increasing the thickness of the conductive pattern, it is possible to ensure a sufficient thickness for flowing a large amount of current.

  In the device manufacturing method of the present invention, in the step of forming the opening, by using a molding die on which a convex portion forming the pattern of the opening is formed, and pressing the convex portion against the insulating layer, The opening is preferably formed in the insulating layer.

  In the device manufacturing method according to the present invention, by pressing the mold against the insulating layer and removing the mold, a recess corresponding to the opening is formed on the conductive pattern. Therefore, for example, since the opening can be formed on the conductive pattern by a simple method that does not use photolithography or the like, it is possible to achieve a reduction in manufacturing cost by simplifying the process.

In the device manufacturing method of the present invention, it is preferable that the width of the opening formed in the mold is equal to the width of the conductive pattern.
In the device manufacturing method according to the present invention, since the width of the opening is equal to the width of the conductive pattern, more plating metal can be laminated on the conductive pattern, and therefore, a larger amount of current can flow. It becomes possible.

A device of the present invention is manufactured by the above-described device manufacturing method.
The device according to the present invention is suitable for use in a device that requires a large amount of current because a large amount of current can flow through the conductive pattern by using the above-described device manufacturing method.

The method of manufacturing an organic electroluminescence device of the present invention includes a step of forming a conductive pattern and a semiconductor element on a substrate, a step of forming a first insulating layer on the substrate including the conductive pattern and the semiconductor element, A step of forming an opening at a position corresponding to the conductive pattern with respect to the first insulating layer; a step of laminating a plating metal on the conductive pattern corresponding to the opening by electroless plating; The method includes a step of forming a second insulating layer on the substrate so as to cover the plated metal, and a step of forming an organic electroluminescence element on the second insulating layer.
The manufacturing method of the organic electroluminescence device of the present invention includes a step of forming a conductive pattern and a semiconductor element on a substrate, a step of forming a first insulating layer on the substrate including the conductive pattern and the semiconductor element, A step of forming an opening at a position corresponding to the conductive pattern with respect to the first insulating layer; a step of laminating a plating metal on the conductive pattern corresponding to the opening by electroless plating; The method includes a step of forming a second insulating layer on the substrate so as to cover the plated metal, and a step of forming an organic electroluminescence element on the second insulating layer.

  In the method of manufacturing an organic electroluminescence device according to the present invention, after forming a conductive pattern and a semiconductor element on a substrate, a first insulating layer is further formed, and an opening is formed at a position corresponding to the conductive pattern. A plated metal is laminated on the conductive pattern exposed from the opening. A second insulating layer is formed so as to cover the plated metal, and an organic electroluminescence element is formed on the second insulating layer. Therefore, it is possible to secure a sufficient thickness that allows a large amount of current to flow through the organic electroluminescence element, and thus it becomes possible to manufacture a large-sized organic electroluminescence device that requires a large amount of current. . Furthermore, compared with the conventional ink jet method, it is not necessary to raise the temperature, and the resistance of the conductive pattern can be lowered.

In the method for manufacturing an organic electroluminescence device of the present invention, it is preferable that the plated metal laminated on the conductive pattern becomes a power supply line for supplying power to the organic electroluminescence element.
In the method for manufacturing an organic electroluminescence device of the present invention, it is preferable that a power supply line for supplying power to the organic electroluminescence element is formed by a plated metal laminated on the conductive pattern.

  In the method of manufacturing an organic electroluminescence device according to the present invention, since the thickness of the power supply line is increased, more current can be passed through the power supply line, so that the organic electroluminescence element is stabilized with sufficient current. Can be driven.

In the method of manufacturing an organic electroluminescence device of the present invention, in the step of forming the opening, the opening has a first mold having a convex portion that forms a pattern of the opening as the first insulating layer. It is preferably formed by pressing.
In the method of manufacturing the organic electroluminescence device of the present invention, in the step of forming the opening, a forming die in which a protrusion forming the pattern of the opening is used, and the protrusion is used as the first insulating layer. It is preferable to form the opening in the first insulating layer by pressing.

  In the method for manufacturing an organic electroluminescence device according to the present invention, a concave portion corresponding to the opening is formed on the conductive pattern by pressing the molding die against the first insulating layer and removing the molding die. Therefore, since the opening can be formed on the conductive pattern by a simple method, it is possible to achieve a reduction in manufacturing cost by simplifying the process.

In the manufacturing method of the organic electroluminescence device of the present invention, it is preferable that the width of the opening is substantially the same as the width of the conductive pattern.
In the method for manufacturing an organic electroluminescence device of the present invention, it is preferable that the width of the opening formed in the mold is equal to the width of the conductive pattern.
In the manufacturing method of the organic electroluminescence device according to the present invention, since the width of the opening is equal to the width of the conductive pattern, more plating metal can be laminated on the conductive pattern, and further, a larger amount of current flows. It becomes possible.

In the method for manufacturing an organic electroluminescence device of the present invention, the conductive pattern has a plurality of conductive patterns, and the organic electroluminescent element includes a first electrode, a second electrode, and the first electrode. It is preferable that a light emitting layer provided between the second electrode and the second electrode is provided, and at least one of the plurality of conductive patterns is electrically connected to the semiconductor element and the first electrode.
In the method for manufacturing an organic electroluminescence device of the present invention, the opening is preferably a contact hole for electrically connecting the semiconductor element and the organic electroluminescence element.
In the method for manufacturing an organic electroluminescence device of the present invention, the mold has a convex portion, and the convex portion is pressed against the first insulating layer, whereby the semiconductor element and the organic electroluminescent element are manufactured. It is preferable to form a contact hole for electrically connecting the two and the opening at the same time.

  In the method for manufacturing an organic electroluminescence device according to the present invention, the contact for electrically connecting the semiconductor element and the organic electroluminescence element by pressing the convex portion of the molding die against the first insulating layer and removing the molding die. A hole is formed. In other words, since the contact hole can be formed simultaneously with the opening simply by pressing the mold, it is not necessary to form it separately by photolithography or the like, so that the manufacturing cost can be reduced by simplifying the process. It becomes possible.

In the method of manufacturing an organic electroluminescence device of the present invention, the step of forming the second insulating layer includes a step of flattening the second insulating layer, and the step of flattening the second insulating layer includes Preferably, a second mold different from the first mold is pressed against the second insulating layer to flatten the surface of the second insulating layer.
In the manufacturing method of the organic electroluminescence device of the present invention, after the second insulating layer is formed, the second insulating layer is pressed against another molding die having a flat surface, whereby the second insulating layer is pressed. It is preferable to provide a step of planarizing the surface of the insulating layer.

  In the manufacturing method of the organic electroluminescence device according to the present invention, the surface of the substrate can be surely flattened by pressing another molding die against the second insulating layer and removing the molding die, and the organic formed thereon Also in the electroluminescence element, the generation of a step can be suppressed. Therefore, it is possible to provide an organic electroluminescence device with high display quality that hardly causes display unevenness.

In the method for manufacturing an organic electroluminescence device of the present invention, the second mold has a convex portion, and the second mold is pressed against the second insulating layer, and the second insulating layer is formed. It is preferable to provide the process of forming a partition part.
In the method of manufacturing an organic electroluminescence device of the present invention, as the other mold, a mold having a convex portion is used. By pressing the convex portion against the second insulating layer, the second insulating layer is formed. It is preferable to provide the process of forming a partition part.

  In the manufacturing method of the organic electroluminescence device according to the present invention, the partition wall portion can be formed by pressing the convex portion of another molding die against the second insulating layer and removing the other molding die. Therefore, when forming an organic electroluminescence element in a region surrounded by the partition wall, for example, when a droplet discharge method using an inkjet device or the like is used, the problem that the discharged droplet spreads out to an unintended place is solved. It becomes possible.

An electronic apparatus according to the present invention includes an organic electroluminescence device manufactured by the method for manufacturing an organic electroluminescence device described above.
The organic electroluminescent device of the present invention is manufactured by the method for manufacturing an organic electroluminescent device described above.

  In the organic electroluminescence device according to the present invention, by using the method for manufacturing an organic electroluminescence device, a large amount of current can flow through the conductive pattern. It can be driven.

  Embodiments of the present invention will be described below with reference to the drawings. In each drawing used for the following description, the scale of each member is appropriately changed to make each member a recognizable size.

(First embodiment of organic EL device)
First, FIG. 1 is a schematic cross-sectional view showing the configuration of the main part of a first embodiment of the organic electroluminescence device (organic EL device) of the present invention. The organic EL device 1 according to the present embodiment has a configuration in which an organic EL element 29 is provided on a semiconductor substrate 3.

  The semiconductor substrate 3 is mainly formed on a glass substrate 10a, a scanning line 11 having a predetermined shape which is formed on the glass substrate 10a and electrically connected to the organic EL element 29, and a power supply pattern for supplying power to the organic EL element 29 ( (Conductive pattern: power supply line) 12 and cathode pattern (conductive pattern) 13 electrically connected to the cathode 25 described later, plated metal 51 and 52 laminated on the power supply pattern 12 and the cathode pattern 13, and an organic EL element A TFT (driving element) 14 for driving the power supply 29, a first resin film 30 and a second resin film 60 are included. Further, the TFT 14 is connected to the scanning line 11 and the power supply pattern 12 through the conductive paste 15. The conductive paste 15 includes anisotropic conductive particles (ACP).

  The first resin film 30 provided on the semiconductor substrate 3 has a function of forming openings 30 a and 30 b for laminating (growing) the plated metals 51 and 52 on the power supply pattern 12 and the cathode pattern 13. The second resin film 60 is formed so as to cover the plating metals 51 and 52 and has a function of flattening the inner surface of the semiconductor substrate 3. Further, contact holes (through holes for conduction) 30c, 60c are formed in the first and second resin films 30, 60, and bumps (conduction portions) 53 formed in the contact holes 30c, 60c. , 67, the TFT 14 and the organic EL element 29 are electrically connected.

  The organic EL element 29 includes an anode 21 electrically connected to the TFT 14 formed on the semiconductor substrate 3, a hole injection / transport layer 22, a light emitting layer 23, an electron injection / transport layer 24, and a cathode 25. The holes generated at the anode 21 and the electrons generated at the cathode 25 are combined in the light emitting layer 23 to emit light. In addition, a well-known technique is employ | adopted for the detailed structure of such an organic EL element 29. FIG.

  Further, the organic EL element 29 is sealed with a sealant 26, and a cover glass 20 is formed on the sealant 26. The organic EL element 29 has a pixel configuration, and a bank 27 as a partition wall is formed around one pixel so as to surround the pixel. The bank 27 is a member necessary when the organic EL element 29 is formed by the ink jet method, and is made of, for example, an acrylic resin.

  In the present embodiment, a top emission structure in which light emitted from the light emitting layer 23 is extracted from the cathode 25 side is employed. Therefore, a co-deposited film of bathocuproine (BCP) and cesium (Cs) is used for the cathode 25, and further conductive. A structure in which ITO is laminated in order to impart the above is employed. Further, the anode 21 has a highly reflective metal material such as Al or Ag, a translucent material such as Al / ITO, and a highly reflective metal material so that light emitted from the anode 21 side can be extracted from the cathode 25 side. The laminated structure is adopted.

(Method for manufacturing organic EL device)
Next, a method for manufacturing the organic EL device 1 shown in FIG. 1 will be described. In the manufacturing method of the organic EL device 1 according to the present embodiment, after manufacturing the semiconductor substrate 3, the organic EL element 29 is formed, and this is further sealed with the sealant 26 and covered with the cover glass 20. is there. In the following, description will be given in order.

(1. Semiconductor substrate manufacturing process)
In the manufacturing process of the semiconductor substrate 3, the element substrate 40 (see FIG. 2) including the TFTs 14 is manufactured, and the wiring substrate 10 (see FIG. 3) having the scanning lines 11 is manufactured. A method of transferring to the substrate 10 is employed.

(1-1. Manufacturing process of element substrate)
First, with reference to FIG. 2, a process of manufacturing the element substrate 40 by forming the TFT 14 on the basic substrate (first substrate) 40a will be described. In addition, since the well-known technique including a high temperature process is employ | adopted for the manufacturing method of TFT14, detailed description is abbreviate | omitted and suppose that formation of the peeling layer 41 is demonstrated in detail.

  First, a basic substrate 40a as shown in FIG. 2 is prepared. Here, the base substrate 40a which becomes the base of the element substrate 40 is not a component of the organic EL device 1, but a member used only for the TFT manufacturing process, the bonding and transfer process.

  As the basic substrate 40a, a translucent heat-resistant substrate such as quartz glass that can withstand about 1000 ° C. is preferable. Further, the thickness of the base substrate 40a does not have a large limiting element, but is preferably about 0.1 mm to 1.5 mm, and more preferably about 0.5 mm to 1.5 mm. This is because if the thickness of the base substrate 40a is too thin, the strength is lowered, and if it is too thick, the irradiation light is attenuated when the transmittance of the substrate is low.

  Then, a release layer 41 is formed on the base substrate 40a. The peeling layer 41 is made of a material that causes peeling (also referred to as “in-layer peeling” or “interface peeling”) in the layer or at the interface by irradiation light such as laser light. That is, by irradiating with a certain intensity of light, the bonding force between atoms or molecules in the atoms or molecules constituting the constituent material disappears or decreases, causing ablation or the like and causing separation. is there. In addition, when the component contained in the release layer 41 is released as a gas due to irradiation with irradiation light, the separation layer 41 absorbs light and becomes a gas, and the vapor is released to separate. May lead to.

  As a composition of the peeling layer 41, for example, amorphous silicon (a-Si) is adopted, and hydrogen (H) may be contained in the amorphous silicon. When hydrogen is contained, it is preferable that hydrogen is released by light irradiation to generate an internal pressure in the release layer 2, which promotes peeling. In this case, the hydrogen content is preferably about 2 at% or more, more preferably 2 to 20% at%. The hydrogen content should be set appropriately for film formation conditions, such as the gas composition, gas pressure, gas atmosphere, gas flow rate, gas temperature, substrate temperature, and power to be applied when using the CVD method. Adjust by. Other release layer materials include silicon oxides or silicate compounds, nitride ceramics such as silicon nitride, aluminum nitride, titanium nitride, organic polymer materials (those whose interatomic bonds are broken by light irradiation), A metal, for example, Al, Li, Ti, Mn, In, Sn, Y, La, Ce, Nd, Pr, Gd, or Sm, or an alloy containing at least one of them can be given.

  The thickness of the release layer 41 is preferably about 1 nm to 20 μm, more preferably about 10 nm to 2 μm, and further preferably about 20 nm to 1 μm. This is because if the thickness of the release layer 41 is too thin, the uniformity of the formed film thickness is lost and unevenness occurs in the release. If the thickness of the release layer 41 is too thick, the irradiation light necessary for the release is removed. It is necessary to increase the power (light quantity), and it takes time to remove the residue of the release layer 41 remaining after the release.

  A specific method for forming the release layer 41 may be any method that can form the release layer 41 with a uniform thickness, and can be appropriately selected according to various conditions such as the composition and thickness of the release layer 41. . For example, various vapor deposition methods such as CVD (including MOCCVD, low pressure CVD, ECR-CVD), vapor deposition, molecular beam vapor deposition (MB), sputtering, ion doping, PVD, electroplating, immersion plating (dipping) ), Various plating methods such as electroless plating method, Langmuir Projet (LB) method, spin coating method, spray coating method, roll coating method and other coating methods, various printing methods, transfer methods, ink jet methods, powder jet methods Applicable to etc. Of these, two or more methods may be combined.

In particular, when the composition of the release layer 41 is amorphous silicon (a-Si), it is preferable to form the film by a CVD method, particularly by low pressure CVD or plasma CVD. Further, when the release layer 41 is formed by using a ceramic by a sol-gel method or is made of an organic polymer material, it is preferably formed by a coating method, particularly by spin coating.
Then, a predetermined pattern of TFTs 14 is formed on the release layer 41 by a known technique to obtain a target element substrate 40.

(1-2. Manufacturing process of wiring board)
Next, the manufacturing process of the wiring board 10 shown in FIG. 3 will be described.
First, a glass substrate 10a as shown in FIG. 3 is prepared, and a scanning line 11, a power supply pattern 12, and a cathode pattern 13 are formed on the glass substrate 10a. As a method for forming the scanning line 11, the power supply pattern 12, and the cathode pattern 13, a known technique such as a photolithography method is employed. Alternatively, a dispersion liquid in which metal fine particles are dispersed in a solvent may be formed on the glass substrate 10a using a droplet discharge method (inkjet method). As a material constituting the scanning line 11, the power supply pattern 12, and the cathode pattern 13, it is preferable to use a low resistance material, and it is preferable to use Al or an Al alloy (Al—Cu alloy or the like).

Note that a silicon oxide film (SiO ₂ ) or the like may be formed as a base insulating film on the surface of the glass substrate 10a. 3 illustrates a structure in which only one layer of the scanning line 11, the power supply pattern 12, and the cathode pattern 13 is formed, a two-layer or three-layer structure may be used. Further, the wiring material is not limited to Al or Al alloy, but may be a sandwich structure in which a low resistance metal such as Al is laminated with Ti or a Ti compound. In this way, the barrier property against the Al wiring can be improved.

(1-3. TFT transfer process)
Next, a method for obtaining the semiconductor substrate 3 by bonding the wiring substrate 10 and the element substrate 40 and transferring the TFT 14 to the wiring substrate 10 will be described with reference to FIGS. 4 to 6.

  As shown in FIG. 4, the TFT substrate side of the element substrate 40 is directed to the wiring substrate 10, and the conductive paste 15 containing anisotropic conductive particles (ACP) is interposed between the TFT 14 and the glass substrate 10a. Then, the element substrate 40 and the wiring substrate 10 are bonded together.

Next, as shown in FIG. 5, only the portion where the conductive paste 15 is applied is irradiated with the laser beam LA locally and from the back surface side (TFT non-formation surface) of the basic substrate 40. Thereby, the bonds of atoms and molecules in the peeling layer 41 are weakened, and the hydrogen in the peeling layer 41 is molecularized and separated from the crystal bonds, that is, the bonding force between the TFT 14 and the base substrate 40a is completely lost. In the region irradiated with the laser beam LA, the base substrate 40a can be easily removed from the TFT.
Next, by peeling the basic substrate 40a from the bonded state, the TFT 14 is removed from the basic substrate 40a and the TFT 14 is transferred to the wiring substrate 10.
Through the transfer process as described above, the wiring substrate 10 having a configuration in which the TFTs 14 are formed on the glass substrate 10a is obtained.

(1-4. Insulating layer forming step)
Next, a method for forming the insulating layer (first insulating layer) 30 will be described with reference to FIGS.
First, as shown in FIG. 6, an uncured insulating layer 31 is applied to the entire surface of the wiring substrate 10, that is, to completely cover the TFT 14, the scanning line 11, the power supply pattern 12, and the cathode pattern 13. The uncured insulating material may be either a photocurable resin or a thermosetting resin. In this embodiment, a photocurable acrylic resin is used. In addition, as a coating method of the insulating layer 31, a liquid phase method such as a spin coating method is employed.

  After the insulating layer 31 is formed, unevenness is formed on the surface of the insulating layer 31 by pressing a mold 50 as shown in FIG. 7 from above the insulating layer 31. Here, the mold 50 means a mold (surface mold) for giving a predetermined surface shape to the insulating layer 31 and is made of an ultraviolet transmitting material such as glass. . Specifically, convex portions 50a and 50b for forming openings 30a and 30b on the power supply pattern 12 and the cathode pattern 13, a convex portion 50c for forming contact holes 30c on the scanning line 11, and a concave portion (The concave bottom surface is a flat surface). When the material constituting the insulating layer 31 is a thermosetting resin, the mold 50 can be formed by Ni electroforming or the like. Further, the widths L and M of the convex portions 50a and 50b are equal to the widths P and Q of the power supply pattern 12 and the cathode pattern 13, and the depth of the convex portions 50a and 50b is formed slightly deeper than the thickness of the TFT 14. . Further, the side surfaces of the convex portions 50a, 50b, and 50c are tapered so that the mold 50 can be suitably peeled (extracted).

By pressing the mold 50 against the insulating layer 31, the protrusions 50 a, 50 b and 50 c corresponding to the openings 30 a and 30 b and the contact hole 30 c reach the bottom surface of the insulating layer 31 from the surface of the insulating layer 31. And after irradiating UV light and hardening the insulating layer 31, a convex shape can be transcribe | transferred to the insulating layer 31 by removing the shaping | molding die 50 from the insulating layer 31. FIG. As a result, the resin film 30 having a flat surface corresponding to the concave bottom surface of the concave portion 50d is formed while the openings 30a, 30b and the contact hole 30c are formed in the insulating layer 31. Here, the protrusions 50a, 50b, and 50c of the mold 50 also have a function for making the thickness of the insulating layer 31 constant within the substrate surface.
Note that the surface of the mold 50 (at least the surface in contact with the insulating layer 31) can be easily peeled off from the insulating layer 31 by performing a water repellent treatment or the like.

Next, as shown in FIG. 9, plating metals 51 and 52 and bumps 53 are formed on the scanning line 11, the power supply pattern 12 and the cathode pattern 13.
The plated metals 51 and 52 and the bumps 53 of this embodiment are formed by using an electroless plating method. First, in order to grow plating, hydrofluoric acid and sulfuric acid are used to improve the wettability of the surfaces of the scanning lines 11, the power supply patterns 12, and the cathode patterns 13 exposed from the openings 30a and 30b and the contact holes 30c, and to remove residues. Impregnation in an aqueous solution containing.

Thereafter, the substrate is immersed in a heated alkaline aqueous solution containing sodium hydroxide to remove the oxide film on the surface. Thereafter, the surface of the pad is replaced with Zn by immersing in a zincate solution containing ZnO. Thereafter, it is immersed in a nitric acid aqueous solution, the Zn is peeled off, and again immersed in a zincate bath to deposit dense Zn particles on the Al surface.
Then, it is immersed in an electroless Ni plating bath to form Ni plating. The plating height is about 2 μm to 10 μm. Here, since the plating bath is a bath using hypophosphorous acid as a reducing agent, phosphorus (P) is co-deposited. Finally, it is immersed in a displacement Au plating bath to change the Ni surface to Au. Au is formed to have a thickness of about 0.05 μm to 0.3 μm. The Au bath is immersed using a cyan free type.

In this way, Ni—Au bumps are formed on the pads. Further, solder or Pb-free solder, for example, Sn-Ag-Cu-based solder may be formed on the Ni-Au bumps by screen printing, dipping, or the like to form bumps. In addition, a water washing process is performed between each chemical process. The washing tank has an overflow structure or a QDR mechanism, and performs N ₂ bubbling from the bottom surface. As for the bubbling method, a hole is made in a Teflon (registered trademark) tube or the like and N ₂ is discharged, or N ₂ is discharged through a sintered body or the like. By the above steps, a sufficiently effective rinsing can be performed in a short time.
Through such a series of steps, as shown in FIG. 9, plated metals 51, 52 and bumps 53 are formed on the patterns 11, 12, 13. In this way, the power supply pattern 12 and the cathode pattern 13 are thickened.

(1-5. Formation process of insulating layer)
Next, a method for forming the insulating layer (second insulating layer) 60 will be described with reference to FIGS.
First, as shown in FIG. 10, an uncured insulating layer 61 is applied to the entire surface of the wiring substrate 10, that is, to completely cover the plated metals 51 and 52 and the bumps 53. The uncured insulating material and the coating method are the same as those of the insulating layer 30 described above.
After the insulating layer 61 is formed, the surface of the insulating layer 61 is flattened by pressing a mold (another mold) 65 as shown in FIG. 10 from above the insulating layer 61. Here, the forming die 65 has a flat portion 65d, and a convex portion 65a for forming a pattern 60a of a predetermined bank 27 as shown in FIG. 11 and a contact hole 60b on the plated metal 52. The protrusions 65 b and the protrusions 65 c for forming the contact holes 60 c on the bumps 53 are formed. The contact hole 60b is for electrically connecting the plated metal 52 and the cathode 25, and the contact hole 60c is for electrically connecting the TFT 14 and the organic EL element 29.

  By pressing such a mold 65 against the insulating layer 61 and irradiating UV light as described above, the pattern of the bank 27 is formed on the insulating layer 61 in the same manner as when the mold 50 is pressed against the insulating layer 31. While forming the contact hole 60b and the contact hole 60c, the resin film 60 having a flat surface is formed by the flat portion 65d. Here, the convex portions 65b and 65c of the mold 65 also have a function of making the thickness of the insulating layer 61 constant within the substrate surface.

  Moreover, the cross-sectional shape of the convex parts 50a, 50b, 50c, 65b, 65c of the molds 50, 65 may be formed in a rectangular shape without a taper. Further, the molding dies 50 and 65 are attached to a belt wound around a rotatable roller, the belt is scanned with the rotation of the roller, and the molding dies 50 and 65 are moved annularly, and the semiconductor substrate. The molds 50 and 65 may be pressed against the insulating layers 31 and 61 while 3 is moved by a conveyor or the like. In this case, since the molding dies 50 and 65 can be pressed against the insulating layers 31 and 61 while continuously moving the molding dies 50 and 65, the semiconductor substrate 3 can be mass-produced.

Next, as shown in FIG. 12, bumps 66 and 67 are formed in the contact holes 60b and 60c.
The bumps 66 and 67 of this embodiment are formed by using an electroless plating method. The bumps 66 and 67 are formed by the same process as the manufacturing process of the plating metals 51 and 52 and the bump 53 by the above-described electroless plating method.

(2. Formation process and sealing process of organic EL elements)
The formation process of the organic EL element 29 is performed using a known inkjet method.
Briefly, as shown in FIG. 13, first, an anode 21 such as ITO is formed by vapor deposition on the insulating layer 60 using a mask having a predetermined pattern, and then the surface of the bank 27 is subjected to a liquid repellent treatment. The surface of the anode 21 is subjected to lyophilic treatment. Thereafter, as shown in FIG. 14, a hole injection / transport layer 22, a light emitting layer 23, and an electron injection / transport layer 24 are formed in an area surrounded by the bank 27 by an ink jet method. Then, the entire surface of the electron injection / transport layer 24 and the bank 27 is covered, and a cathode 25 made of ITO or the like is formed using a mask having a shape that is electrically connected to the bump 66. Subsequently, this is sealed with a sealant 26, and a cover glass 20 is further formed to obtain the organic EL device 1 shown in FIG.
In addition, the bump 67 can be omitted by forming a material (ITO or the like) constituting the anode 21 into a via shape along the contact hole 60c.

  In this embodiment, the case where a polymer type EL element is used has been described. However, for example, a low molecular type EL element formed by mask sputtering may be used. In this case, bank formation, bank lyophobic treatment, and anode lyophilic treatment are unnecessary.

  Thus, in this embodiment, since sufficient thickness which can flow a large capacity | capacitance electric current to the organic EL element 29 can be ensured, the large sized organic electroluminescent apparatus which requires a large capacity | capacitance electric current is obtained. It becomes possible to manufacture. In addition, since the molding die 65 capable of simultaneously performing the planarization of the insulating layer 60 and the formation of the bank 27 is used, it is possible to achieve a reduction in manufacturing cost by simplifying the process.

(Second Embodiment of Organic EL Device)
Next, a second embodiment of the organic EL device will be described with reference to FIG. In each embodiment described below, portions having the same configuration as those of the organic EL device 1 according to the first embodiment described above are denoted by the same reference numerals and description thereof is omitted.
The organic EL device 70 according to the present embodiment is different from the first embodiment in the mold used after the insulating layer 61 is formed.
Specifically, as shown in FIG. 15, the organic EL device 70 is formed such that a bank 78 covers the bumps 76.

First, a method of forming the insulating layer (second insulating layer) 74 will be described with reference to FIG.
After the insulating layer 61 is formed, the surface of the insulating layer 61 is flattened by pressing a mold (another mold) 71 from above the insulating layer 61. Here, the forming die 71 has a flat portion 71 c, a convex portion 71 a for forming the contact hole 73 a on the plated metal 52, and a convex portion 71 b for forming the contact hole 73 b on the bump 53. It is formed. The contact hole 73a is for electrically connecting the plated metal 52 and the cathode 25, and the contact hole 73b is for electrically connecting the TFT 14 and the organic EL element 29.

  By pressing such a mold 71 against the insulating layer 61 and irradiating UV light as in the first embodiment, the contact hole 73a, 73b is formed in the insulating layer 61, and the flat surface is formed by the flat portion 71c. A resin film 74 to which is applied is formed. Here, the convex portions 71a and 71b of the mold 71 also have a function of making the thickness of the insulating layer 61 constant within the substrate surface.

Next, a method for forming the insulating layer (second insulating layer) 79 will be described with reference to FIG.
First, an uncured insulating layer 77 is applied over the entire surface of the wiring substrate 10, that is, so as to completely cover the anode 21 and the bump 75. After the insulating layer 77 is formed, the surface of the insulating layer 77 is flattened by pressing a mold (other mold) 72 from above the insulating layer 77. Here, the forming die 72 has a flat portion 72 c, a convex portion 72 a for forming a pattern 79 a of a predetermined bank 78, and a convex portion 72 b for forming a contact hole 79 b on the bump 75. It has been done. The contact hole 79b is for electrically connecting the bump 75 and the cathode 25.

  By pressing such a mold 72 against the insulating layer 77 and irradiating with UV light as in the first embodiment, a contact hole 79b is formed in the insulating layer 77 and a flat surface is provided by the flat portion 72c. The resin film 79 is formed. Here, the convex portion 72b of the mold 74 also has a function of making the thickness of the insulating layer 77 constant within the substrate surface.

Next, the formation process and the sealing process of the organic EL element will be described.
First, the surface of the bank 78 is subjected to a liquid repellent treatment, while the surface of the anode 21 is subjected to a lyophilic treatment. After that, as shown in FIG. 20, the hole injection / transport layer 22, the light emitting layer 23, and the electron injection / transport layer 24 are formed in the region surrounded by the bank 78 by the ink jet method. Then, a cathode 25 made of ITO or the like is formed using a mask that covers the electron injection / transport layer 24 and is electrically connected to the bump 75. Subsequently, this is sealed with a sealant 26, and the cover glass 20 is further formed to obtain the organic EL device 70 shown in FIG.
Note that the bump 74 can be omitted by forming a material (ITO or the like) constituting the anode 21 into a via shape along the contact hole 73b.

  Thus, in the present embodiment, the bank 78 is formed so as to cover the bumps 76 by using the separate molds 71 and 72 for forming the flat surface and forming the bank 78. In this way, the bank 78 covers the bumps 76, so that it is possible to reliably avoid short circuit between the anode 21, the light emitting layer 23, and the cathode 25.

(Electronics)
Next, an example of an electronic apparatus including the organic EL device 1 or the organic EL device 70 will be described with reference to FIG. FIG. 21 is a perspective view of a mobile phone. The organic EL device is disposed inside the casing of the mobile phone 1000. And according to the electronic device comprising the mobile phone 1000, it is possible to provide an electronic device equipped with an inexpensive and highly reliable organic EL device.

  Note that the organic EL device formed by the above method can be applied to various electronic devices other than a mobile phone. For example, the present invention can be applied to electronic devices such as personal computer monitors, word processor monitors, televisions, electronic notebooks, electronic desk calculators, and car navigation devices.

The technical scope of the present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the present invention.
For example, in each said embodiment, although demonstrated using the organic electroluminescent apparatus 1 and 70, it is not restricted to this, It can also apply to the device provided with a conductive pattern.
Further, as a method of mounting the TFT 14 on the glass substrate 10a, the TFT 14 is formed on the element substrate 40 and transferred to the wiring substrate 10. However, the present invention is not limited to this. For example, a die bonding apparatus is used. Thus, the TFT 14 may be bonded to the wiring board 10. Alternatively, the TFT 14 may be directly built on the glass substrate 10a.

Sectional drawing which shows the principal part structure of 1st Embodiment of the organic electroluminescent apparatus of this invention. Sectional drawing which shows the structure of the element substrate for manufacturing the organic EL apparatus of FIG. Sectional drawing which shows the aspect of the transcription | transfer process of TFT. Sectional drawing for demonstrating the process of laser beam irradiation. Sectional drawing for demonstrating the peeling process of a board | substrate. Sectional drawing for demonstrating the formation process of a resin film. Sectional drawing for demonstrating the formation process of a resin film. Sectional drawing for demonstrating the formation process of an opening part. Sectional drawing for demonstrating the formation process of a plating metal and a bump. Sectional drawing for demonstrating the formation process of a resin film. Sectional drawing for demonstrating the formation process of a resin film. Sectional drawing for demonstrating the formation process of bump. Sectional drawing for demonstrating the formation process of an organic EL element. Sectional drawing for demonstrating the formation process of an organic EL element. Sectional drawing which shows the principal part structure of 2nd Embodiment of the organic electroluminescent apparatus of this invention. Sectional drawing for demonstrating the formation process of a resin film. Sectional drawing for demonstrating the formation process of a resin film. Sectional drawing for demonstrating the formation process of the anode of an organic EL element. Sectional drawing for demonstrating the formation process of a bank. Sectional drawing for demonstrating the formation process of an organic EL element. FIG. 11 is a perspective view illustrating an embodiment of an electronic apparatus according to the invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1,70 ... Organic EL apparatus, 12 ... Power supply pattern (conductive pattern: power supply line), 13 ... Cathode pattern (conductive pattern), 27, 78 ... Bank (partition part), 30a, 30b ... Opening part, 30 ... 1st 1 insulating layer, 50 ... mold, 50a, 50b ... projection, 51,52 ... plated metal, 60,79 ... second insulating layer, 65 ... other mold, 71 ... first mold (others) , 72... Second mold (other mold), 79. Insulating layer (second insulating layer)

Claims (9)

Forming a conductive pattern and a semiconductor element on a substrate;
Forming a first insulating layer on the substrate including the conductive pattern and the semiconductor element;
Forming an opening at a position corresponding to the conductive pattern with respect to the first insulating layer;
Laminating a plating metal on the conductive pattern corresponding to the opening by electroless plating;
Forming a second insulating layer on the substrate so as to cover the plated metal;
Method of manufacturing an organic electroluminescent device characterized by comprising a step of forming an organic electroluminescent element on the second insulating layer. The conductive pattern has a plurality of conductive patterns,
The organic electroluminescence element includes a first electrode, a second electrode, and a light emitting layer provided between the first electrode and the second electrode,
2. The method of manufacturing an organic electroluminescence device according to claim 1, wherein at least one of the plurality of conductive patterns is electrically connected to the semiconductor element and the first electrode. The opening method of producing an organic electroluminescent device according to claim 2, characterized in that the first contact hole for electrically connecting the electrode of the semiconductor element and the organic electroluminescence element. Wherein the plating metal laminated on the conductive pattern on the method of manufacturing an organic electroluminescent device according to claim 1, characterized in that a power supply line for supplying power to the organic electroluminescence device. In the step of forming the opening,
The said opening part is formed by pressing the 1st shaping | molding die which has the convex part which makes the pattern of the said opening part to a said 1st insulating layer, The any one of Claims 1-4 characterized by the above-mentioned. The manufacturing method of the organic electroluminescent apparatus of 1 item | term . 6. The method of manufacturing an organic electroluminescence device according to claim 1 , wherein the width of the opening is substantially the same as the width of the conductive pattern. 7. The step of forming the second insulating layer includes the step of planarizing the second insulating layer,
In the step of flattening the second insulating layer, a second mold different from the first mold is pressed against the second insulating layer to flatten the surface of the second insulating layer. method of manufacturing an organic electroluminescent device according to claim 5 or claim 6, characterized in that. The second mold has a convex portion,
8. The method of manufacturing an organic electroluminescence device according to claim 7 , further comprising a step of pressing the second mold against the second insulating layer to form a partition wall in the second insulating layer. Method. The electronic device provided with the organic electroluminescent apparatus manufactured by the manufacturing method of the organic electroluminescent apparatus of any one of Claims 1-8 .