JP4501519B2 - Manufacturing method of metal partition for PDP - Google Patents

Description

  The present invention relates to an etching product for forming through holes or half-etched irregularities on a metal flat plate using a wet etching method, and a method for manufacturing the same. In particular, the present invention relates to etching products used for flat panel displays such as PDP and FED, semiconductor package members, and the like.

  The use of metals as materials for electronic members such as partition walls and semiconductor package members used in image display devices has been studied.

  A metal member has the advantage of having a cooling action because it can finely process a large area at once by wet etching and has good heat dissipation.

  On the other hand, the difference in thermal expansion of metal members comes into contact with other types of materials when bonded, but in the case of metals, the coefficient of thermal expansion can be adjusted by changing the composition of the alloy. In addition, when used as an electronic member, it can also serve as a shield for electromagnetic waves and electrical noise.

  As a metal product, for example, a metal partition of a PDP has been proposed for use as a metal core rib and a manufacturing method thereof (see Patent Document 1).

  Up to now, it has been common to use a glass substrate as a PDP back plate material and to manufacture by a sandblast method. In general, a method of forming a rib shape by finely processing a partition wall by wet etching on a metal substrate and performing an insulation treatment is performed. Patent Document 1 discloses an insulation processing method for forming a dielectric containing glass by an electrodeposition method.

  In addition to Patent Document 1, for example, an insulating process is performed by a spray method or an electrodeposition method (see Patent Document 2), and an insulating process method for forming an oxide on a substrate surface using a vapor deposition method (Patent Document 3) Reference), a method using atmospheric open CVD (see Patent Document 4), and a glass film forming method by electrostatic powder coating (see Patent Document 5).

  However, in the methods described in Patent Documents 1 and 2, bubbles remain in the insulating layer, and the film thickness of the corner portion formed by etching in the flow at the time of firing becomes thin, so the insulation varies. It will occur. For this reason, in order to maintain insulation, the film must be thickened as a whole. As a result, even if high-definition processing is performed by etching, the opening becomes narrow as a result, and in the case of a display, the brightness is reduced, or if the pattern is further high-definition, the hole is filled with an insulator. There is also a thing.

  Further, the vapor phase growth method described in Patent Document 3 has problems such as poor productivity in order to obtain a sufficient withstand voltage because the film formation rate is low. Unlike the ordinary vapor phase growth method, open-air CVD described in Patent Document 4 is easy to carry in and out of materials because of no decompression process, can be continuously produced, and can be expanded to large sizes. Since high heat is applied to the substrate, blackening due to oxidation occurs on the substrate surface, and light emitted when the display is formed is absorbed, leading to a decrease in luminance.

Furthermore, in the glass film formation by powder electrostatic coating described in Patent Document 5, the film melts at the time of firing, and the film becomes dense, but the film is agglomerated by the surface tension and the corner film becomes thin, so that the withstand voltage characteristic is sufficient. It will disappear. In addition, there is a problem that the surface of the metal plate is oxidized during firing, and adhesion with the film cannot be obtained. Therefore, it has not yet been commercialized as an insulating film technology for the metal partition walls of PDP.
JP 2003-205738 A JP 2000-277021 A JP 2004-002204 A Japanese Patent Laid-Open No. 2003-132802 JP 2001-195978 A

  The present invention has been devised to solve the above-mentioned problems, and provides a metal etching product having high insulation reliability, an inexpensive production characteristic with an easy production method, and etching with good insulation. The object is to provide an effective manufacturing method for obtaining products.

The invention according to claim 1 is a method of manufacturing a metal partition wall for PDP, wherein a metal flat plate made of either Fe-Ni alloy or Fe-Ni-Cr alloy is finely processed by wet etching to form a half-etched surface. A processed portion having an uneven shape is formed, and a dibutyl ether solution of polysilazane is applied to one side including the processed portion by an electrostatic coating method, dried, and then fired in the air at a temperature of 300 ° C. to 500 ° C. to have a thickness of 1 μm A method of manufacturing a metal partition wall for PDP, wherein an insulating layer having a large size of less than 3 μm is formed .

  According to the present invention, it is possible to provide a metal product having an insulating layer exhibiting high performance and excellent insulating properties as a metal etching product, and to provide an easy and highly productive insulation treatment process.

  The present invention is an etching product in which an insulating layer in which polysilazane is formed on one side or both sides of a metal substrate including a processed portion formed by an etching process is formed.

Here, the polysilazane used in the present invention is an inorganic polymer that is soluble in an organic solvent based on silazane having a Si-N bond, and an organic solvent solution of this polymer is used as a coating solution in the atmosphere or in a steam-containing atmosphere. By firing in, a dense high-purity silica layer that is amorphous and reacts with moisture and water can be obtained.
This polysilazane and its film forming process have the following features.
(1) It is applied to the surface and baked at a temperature of 300 ° C. to 500 ° C. to obtain dense high-purity silica that is amorphous.
(2) Since polysilazane does not contain carbon, it has good adhesion to metal materials, and there is no problem of film shrinkage or residual carbon during thermal decomposition, and cracks are unlikely to occur.
(3) No special equipment or film forming conditions are required for the same reason.
(4) Since it can be applied and fired in the atmosphere, continuous production is possible.
(5) Since it is applied and fired in a normal state where the substrate surface is coated, there is no problem of oxidation of the metal plate surface.
(6) Do not use environmentally harmful substances such as lead.

  Because of the above features, the method for producing an insulating film using the polysilazane of the present invention has better adhesion to metal than a film produced by a conventional method, high film quality, and sufficient withstand voltage characteristics. It is shown.

  In addition, the device itself for forming the insulating layer can have a relatively simple structure, the equipment cost is small, and it can be used for large processing materials. Therefore, the present invention is particularly effective for application to the formation of insulating layers of PDPs and FEDs intended for large panels.

  In the method for forming an insulating layer using the polysilazane of the present invention, the thickness of the insulating layer can be densely formed to an arbitrary thickness, and the time required for the formation can be shortened as compared with the previous method.

  In addition, if the thickness of the insulating layer is less than 0.5 μm, sufficient insulation may not be obtained. On the contrary, if the thickness exceeds 5 μm, cracks are generated in the insulating layer due to a difference in thermal expansion from the metal substrate. May occur. Therefore, the range of 0.5 μm to 5 μm is preferable, and the range of 1 μm to 3 μm is more preferable.

The polysilazane used in the insulating layer of the present invention is an inorganic polymer based on (SiH ₂ —NH) _n and preferably has a molecular weight in the range of 600 to 1,000. Since the SiO ₂ of the polysilazane does not contain carbon in (SiH ₂ —NH) n, the adhesion with the metal material is good and dense, and the film shrinks or remains during thermal decomposition as in the sol-gel method. Since there is no problem of oxygen, cracks do not occur in the fired SiO ₂ film.

  The film thickness can also be controlled by the coating method, but can be controlled by increasing or decreasing the molecular weight and changing the ratio of the solvent. In particular, it is an effective material for a structure such as the present invention in which fine processing is performed on a metal material by photoetching and the surface has an uneven surface.

  It is preferable to use an Fe—Ni alloy or an Fe—Ni—Cr alloy as the metal material used in the product of the present invention.

  For example, when this etched product is used as a metal partition for a PDP, it undergoes a thermal cycle of 450 to 500 ° C. in the panel assembly process, so if the thermal expansion difference is large, thermal stress is generated and the panel is damaged, resulting in image display. Can no longer function as a device. In order to prevent this, it is preferable that the partition walls have a thermal expansion coefficient similar to that of the front plate and the rear plate.

  At present, for example, soda lime glass or high strain point glass having a thermal expansion coefficient of about 8 × 10 −6 / ° C. is used for the glass used as the front plate and the back plate of PDP. For this reason, it is preferable to use a Fe—Ni-based alloy containing Ni in the range of 40 to 52% by mass and the balance being substantially Fe, in which Ni is 46% by mass. Particularly preferred is an Fe—Ni alloy in the range of from 50% to 50%.

  These Fe—Ni-based alloys can be made to have a thermal expansion coefficient close to that of the glass and can easily form a fine pattern by an etching method, and thus are suitable for a metal partition wall substrate.

  Further, when used as a member such as a semiconductor package, a metal material is used in combination with the thermal expansion coefficient of the silicon substrate.

  Next, the manufacturing method of a metal etching product is demonstrated.

  First, a photosensitive resist is applied to one or both surfaces of a metal flat plate surface, and patterning is performed so as to open a desired portion where a hole shape is to be formed by etching. Then, by spraying an etching solution such as ferric chloride solution, the portion where the resist is opened is etched to form a half-etched shape or a shape having a processed portion of a through hole on the metal flat plate.

  Thereafter, the resist used is peeled off, degreased and washed with water, and then polysilazane is applied by dipping, spraying, electrostatic coating or the like. Here, any one of xylene, terpene, solvesso, dibutyl ether, or a mixed solvent thereof is used as the solvent.

The polysilazane solution to be applied is used by dissolving polysilazane (SiH ₂ —NH) n to a concentration of 0.5 wt% to 40 wt%. The coating method can be applied by changing the ratio of the solvent to be dissolved and the molecular weight by the spray method, dipping method, etc., but if the depth direction of the unevenness formed by etching is deep, Electrocoating can be applied evenly with better coverage.

Then, after the polysilazane / polysilazane solution is applied, it is dried, fired in the atmosphere or in an atmosphere containing water vapor, and an SiO2 film is formed on the metal substrate. The reaction to SiO ₂ proceeds at 300 ° C. to 500 ° C., but a high temperature of 400 ° C. or higher is preferable to make the film dense.

Incidentally, the reaction to obtain a SiO ₂ polysilazane was fired in air is expressed by the following equation.

(SiH ₂ -NH) + O ₂ → SiO ₂ + NH ₃

  Embodiment 1 of the present invention will be described below.

  A metal flat plate made of Fe-50Ni alloy having a thickness of 300 μm was alkali degreased, and a commercially available dry film resist having a thickness of 20 μm was bonded to the surface of the metal flat plate.

  Next, exposure was performed with a slot pattern photomask having a pitch of 270 × 810 μm and 100 × 640 μm holes, and a photoresist pattern having the same dimensions as the photomask was formed on the metal flat plate by spray development of an alkaline aqueous solution. .

  Etching was spray-etched with a ferric chloride etchant to produce a half-etched metal flat plate leaving a dry film resist. Next, an aqueous solution of caustic soda was sprayed to remove the photoresist, and the rib shape of the metal partition wall for PDP could be produced.

  The metal plate is again degreased with alkali, washed with water, and coated with a polysilazane solution. This polysilazane solution was prepared by dissolving polysilazane in xylene to a ratio of 38% by weight.

  As a coating method, a spray method was used, and the coating was applied uniformly in the plane so that the film thickness before solvent evaporation was 10 μm. Then, it was dried until the solvent was sufficiently volatilized in the atmosphere, and was fired in the atmosphere at 450 ° C. for 60 minutes to form an insulating layer, and the insulating layer could be formed in the above-described rib shape of the metal partition for PDP.

When the insulating metal partition wall for PDP is cut perpendicularly to the longitudinal direction of the slot and the cross section is observed, the shape is as shown in FIG. 1. The hole-shaped side wall is 1.5 μm, and the top flat portion of the partition wall is 2. It was confirmed that a 6 μm film was formed. When the insulation resistance of a flat part without a hole was measured with a metal barrier, the volume low efficiency was 9.02 × 10 ⁸ Ω · cm, and the area low efficiency was 5.48 × 10 ¹⁰ Ω / m ² . The characteristics were shown.

  Embodiment 2 of the present invention will be described below.

  A metal flat plate made of an Fe-42Ni alloy having a thickness of 50 μm was alkali degreased, and a commercially available dry film resist having a thickness of 20 μm was bonded to the substrate surface. Next, with a photomask having a circular pattern with a pitch of 140 × 140 μm and a diameter of 36 μm, the front and back surfaces are aligned, the front and back surfaces are exposed, and the same size as the photomask is obtained by spray development of an alkaline aqueous solution The photoresist pattern was formed.

  Next, etching was carried out with a ferric chloride etchant to perform front and back surface spray etching to produce a half-etched metal flat plate leaving a dry film resist. Next, after peeling off the dry film, a positive electrodeposition photoresist (trade name: Sonne EDUV P-500 manufactured by Kansai Paint) was coated on a half-etched metal flat plate with a uniform film thickness. Then, the positive photomask was aligned, further exposed, and spray-developed with a sodium carbonate aqueous solution to form a positive electrodeposition photoresist patterning. Finally, as the second etching step, the front and back surfaces are spray-etched with a ferric chloride etchant, the aqueous solution of caustic soda is sprayed to remove the photoresist, the plate thickness is 50 μm, and the circular pattern portion is 50 μm. A metal etched product having a circular pattern of through holes with a pitch of 140 × 140 μm could be produced.

  The metal plate is again degreased with alkali, washed with water, and coated with a polysilazane solution. Polysilazane was dissolved in xylene and adjusted to a ratio of 30% by weight. The application was performed using a spray method so that the film thickness was uniformly 8 μm before solvent evaporation.

  Then, it was dried until the solvent was sufficiently volatilized in the atmosphere, and was fired in the atmosphere at 450 ° C. for 60 minutes to form an insulating layer. An insulating layer could be formed on the metal etching product having the circular pattern through-holes described above.

When the cross section of the metal etched product subjected to the insulation treatment is observed, a shape as shown in FIG. 2 is formed, and a 1.2 μm film is formed on the hole-shaped side wall and a 2.2 μm film is formed on the flat portion without the hole shape. Was confirmed. When the insulation resistance of a flat part without a hole shape was measured with an insulation resistance meter, the volume low efficiency was 2.71 × 10 ⁸ Ω · cm, and the area low efficiency was 4.75 × 10 ¹⁰ Ω / m ² . showed that.

Sectional drawing which shows one Example of this invention. Sectional drawing which shows the other Example of this invention.

Explanation of symbols

101, 201 ... Metal flat plate 102, 202 ... Insulating layer 103, 203 ... Side wall 104, 204 ... Flat part

Claims (1)

A method for manufacturing a metal partition wall for PDP, wherein a metal flat plate made of either an Fe-Ni alloy or an Fe-Ni-Cr alloy is finely processed by wet etching to form an uneven-shaped processed portion having a half-etched surface Then, a dibutyl ether solution of polysilazane is applied to one side including the processed part by an electrostatic coating method , dried, and then air-fired at a temperature of 300 ° C. to 500 ° C. to form an insulating layer having a thickness of more than 1 μm and less than 3 μm. A method for producing a metal partition for a PDP.

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