JP4488815B2 - Device, integrated circuit and manufacturing method thereof - Google Patents

Description

  The present invention relates to an element capable of forming a large scale integrated circuit (LSI), an integrated circuit, and a manufacturing method thereof.

  Large scale integrated circuits (LSIs) have been actively promoted so far by miniaturization and structural improvements using the scaling rule as a guiding principle. For example, a capacitor having a three-dimensional structure (Patent Documents 1 to 3), a transistor for reading stored information, a transistor for writing stored information, a memory cell having a three-dimensional capacitor structure (Patent Document 4), and a semiconductor chip are three-dimensionally stacked. A semiconductor device (Patent Document 5) is known.

However, the trend toward higher integration has become difficult to achieve by mere miniaturization or structural improvement. As a breakthrough to break through such technical barriers, the introduction of new material technologies has come to be expected. In particular, attention has been focused on research and development of highly reliable high-dielectric films, wiring materials with low resistivity and high migration resistance, and interlayer dielectric films with low dielectric constants.
JP-A-8-139293 JP-A-10-22471, JP-A-10-56148 JP-A-10-56148 JP 2000-260934 A

  Although a conventional large-scale integrated circuit has a three-dimensional device structure, it is three-dimensionally processed on a substrate that defines a two-dimensional plane, and there is a limit to high integration.

  Even if a new material such as a film having a dielectric constant is introduced to protect the trend of high integration, the material is thinned by a sputtering method, a CVD (Chemical Vapor Deposition) method, etc. In the case of processing by lithography and etching, it is essential that it becomes difficult to finally overcome the technical barrier as well.

  An object of the present invention is to provide an element structure suitable for integration and a manufacturing technique of a large-scale integrated circuit using the element structure.

  In order to achieve the above object, a device and an integrated circuit capable of forming a large-scale integrated circuit according to the present invention are constituted by using carbon nanotubes, which are nanomaterials, and a manufacturing method in which carbon nanotubes are assembled bottom-up. Manufacture by using.

  In the integrated circuit of the present invention, a plurality of unit elements composed of first carbon nanotubes capable of controlling the conductance of carriers conducted in the extending direction of the carbon nanotubes are integrated, and the first carbon nanotubes are integrated with the second carbon nanotubes. The second carbon nanotube has a structure that supports the unit element while being electrically connected.

  The integrated circuit according to the present invention has a configuration in which a unit element including the first carbon nanotube is supported by the second carbon nanotube to form a three-dimensional network structure.

  Furthermore, the first carbon nanotube has semiconducting characteristics, the second carbon nanotube has metallic characteristics, and the first carbon nanotube and the second carbon nanotube have one end face, They are connected by contact with the other side surface.

  In the integrated circuit of the present invention, an insulating structure is formed by connection to at least one side surface of the first carbon nanotube or the second carbon nanotube.

  Further, the carbon nanotube graphite sheet forming the integrated circuit of the present invention is partially replaced with a cyclic compound having a structure other than a six-membered ring.

  The element of the present invention includes a unit element composed of a first carbon nanotube capable of controlling the conductance of carriers conducted in the extending direction of the carbon nanotube, and a second element disposed on substantially the entire circumference of the first carbon nanotube. It has a structure comprising electrodes of the unit element made of carbon nanotubes.

  The element of the present invention has a configuration in which the second carbon nanotube is in contact with the outer surface of the first carbon nanotube at the inner surface, or the second carbon nanotube is in contact with the outer surface of the first carbon nanotube at the outer surface. Have.

  Further, a metal material is formed on substantially the entire circumference of the first carbon nanotube. The graphite sheet of the first or second carbon nanotube is partially replaced with a cyclic compound having a structure other than a six-membered ring.

  The method for manufacturing a large-scale integrated circuit according to the present invention includes a step of forming a first carbon nanotube, a step of forming a connection region in the first carbon nanotube, and a second method that exhibits metallic properties from the connection region. Forming a wiring made of carbon nanotubes.

  Further, the step of forming the connection region uses a step of locally introducing a defect into the first carbon nanotube. Further, in the step of forming the wiring, the first carbon nanotube and the second carbon nanotube are connected by a chemical reaction. Preferably, the chemical reaction is an antigen-antibody reaction.

  Since the present invention forms an integrated circuit by three-dimensionally combining nanomaterials, the degree of integration can be increased as compared with the case of forming an integrated circuit on a conventional substrate (for example, a silicon substrate). Further, according to the present invention, since the gap is formed between these components, it is possible to electrically insulate between the transistors, between the wirings, or between the transistors and the wirings. It is not necessary to form a film or the like. In addition, when a nanomaterial having strong electrical anisotropy is used, the wiring space and the like can be easily reduced, and further higher integration can be achieved.

  Furthermore, according to the present invention, the transistor, gate electrode, contact, and wiring can all be made of carbon, for example, CNT, and an electronic device capable of forming a large-scale integrated circuit made of a single material can be realized. It is.

  An electronic device manufacturing method capable of forming a large-scale integrated circuit according to the present invention includes a step of forming a core exhibiting semiconductor characteristics, a step of forming damage on the core, and a step of forming wiring starting from the damage Therefore, it is possible to provide a manufacturing method that is not affected by the conventional trend of miniaturization.

  In this specification, the first CNT is a CNT having semiconducting properties and is suitable for use as a base material of a semiconductor element. The second CNT is a CNT having metallic properties and is suitable for use in a metal electrode or a metal wiring.

<First Embodiment>
The first embodiment of the present invention will be described below with reference to the drawings. First, the element according to the first embodiment of the present invention will be described. The element according to this embodiment is a transistor that can be applied to a large-scale integrated circuit. The applicable transistor (core) is preferably a cylindrical carbon nanomaterial, and more preferably a carbon nanotube. Carbon nanotubes (hereinafter referred to as “CNT”) are nanomaterials discovered by Iijima et al. (S. Iijima, Nature, 354, 56 (1991)).

  The CNT has a nested structure in which a graphite layer is wound in a cylindrical shape. CNTs have various structures, and among them, it is preferable to use CNTs having semiconducting properties for a region (core) for forming a diffusion layer and a channel layer. When CNT having semiconductor properties is used, a transistor having a total length of 100 nm and a diameter of 10 nm to 30 nm can be formed. When transistors are formed in this size (assuming total length: 100 nm, diameter: 20 nm, space between transistors: 100 nm), it is possible to integrate 1 billion transistors in a cube of about 100 μm square. Become.

  The integration level of 1 billion elements / chip is targeted for the 45 nm generation, which is expected to start mass production around 2010 (Semiconductor Science and Engineering Research Center, STARC Roadmap 2003, July 25, 2003) And a large break-through is possible by using the transistor according to the present embodiment.

  FIG. 1 is a cross-sectional view of an element according to the present embodiment, in which a unit element (hereinafter referred to as “first CNT”) forming a large-scale integrated circuit is cut in a cylindrical CNT structure in a radial direction. It is. As shown in FIG. 1, the length 1 of the unit element according to the present embodiment is 100 nm, and the diameter 2 is about 20 nm. For example, the channel region 3 is formed on the entire circumference of the cylinder by a certain distance in the extending direction of the first CNT, and the gate electrode 4 is formed on the channel region so as to surround the entire circumference. A source region 5 a and a drain region 5 b are formed in a self-aligned manner with respect to the gate electrode 4. In FIG. 1, element isolation regions 6 are formed at both ends of the source / drain regions 5a and 5b. However, whether or not to form the element isolation region 6 is arbitrary, and a physically cut insulating structure may be formed.

  FIG. 2 is a cross-sectional view showing a configuration in which the unit element of FIG. 1 is cut by the channel region 3 along the line II. As shown in FIG. 2, the gate electrode 4 of the element according to the present embodiment is formed so as to surround the channel region 3 at 360 ° (entire circumference). The gate length of the transistor according to the present embodiment is determined by the gate electrode 4, but the gate width is defined by the circumference of the CNT used. That is, the gate width of the transistor of the invention according to the present embodiment is approximately the same occupied area as a general conventional transistor (for example, a MOS (Metal-Oxide-Silicon) FET) formed on a two-dimensional plane. There is an advantage that the drive current is also increased by about 3 times.

  FIG. 3 shows an element according to an embodiment of the present invention, in which a plurality of gate electrode cylinders 41 made of second CNT having a smaller diameter than the first CNT are arranged on substantially the entire circumference of the first CNT. FIG. 5 is a cross-sectional view (channel region of the gate electrode 4) cut in the channel region 3 of the unit element B having a structure formed such that the outer circumferences of the first CNT and the second CNT are in electrical contact with each other. As described above, the second CNT used as each of the gate electrodes 4 ′ composed of a plurality of gate electrode cylinders 41 is different from the first CNT having semiconducting properties and uses CNTs having metallic properties. It is preferable. As to whether the CNTs have a semiconducting property or a metallic property, they can be manufactured by distinguishing them according to the size (diameter), structure, etc. of the CNTs.

  Here, as an example, the difference in conductivity associated with the difference in the structure of CNTs will be described. The conductivity of CNTs varies greatly depending on the chirality, that is, how the graphene sheet is wound. Generally, CNT winding methods include zig-zag, chiral, and armchair. Zigzag CNTs exhibit metal and semiconducting conductivity, and chiral CNTs also exhibit metal and semiconducting conductivity, whereas armchair CNTs exhibit only metallic conductivity. Therefore, when the CNT is formed, the first and second CNTs can be made separately by controlling the chirality, and the element or integrated circuit according to this embodiment can be provided.

  FIG. 4 is a diagram showing a structural example of an integrated circuit in which the wiring 8 is provided on the unit element described with reference to FIGS. As shown in FIG. 4, a contact 7 is formed with respect to the gate electrode 4 and the source / drain region 5 of the unit element according to the present embodiment, and a wiring 8 is formed with respect to the contact 7. The contact 7 in FIG. 4 is not necessarily required, and the wiring 8 may be directly drawn out from the gate electrode 4 and the source / drain region 5.

  However, there is an advantage that the distance between the element and the wiring or the wiring of each wiring can be maintained by the contact 7.

  FIG. 5 is a diagram showing an example in which the unit element A shown in FIG. 4 has a three-dimensional network structure formed by the wiring 8, and is a diagram showing a structure of an integrated circuit in which unit elements are integrated on a large scale. The integrated circuit shown in FIG. 5 can be arbitrarily arranged in a three-dimensional space when unit elements are arranged, and can be arranged flexibly. The unit element 9 provided with the gate electrode 4 and the source / drain 5 is supported in a hollow state at the center of the wiring 8. What should be noted here is that the unit element 9 and the wiring 8 and the wiring 8 and the wiring 8 are electrically insulated by a gap 10 (preferably a gap in a vacuum state). One of the merits of using CNT is anisotropy in the direction of electrical conduction, which is highly conductive in the horizontal direction with respect to the cylindrical shape, but almost in the vertical direction of the cylindrical shape. Absent. Utilizing such properties, electrical insulation is possible, and a three-dimensional network structure is constructed.

  Next, an example of the semiconductor element according to the present embodiment will be described with reference to FIGS. The semiconductor integrated circuit manufacturing method according to the present embodiment uses a crystal growth trigger formation technique and a crystal growth technique without using a fine processing technique such as a photolithography technique and an etching technique used in a known silicon semiconductor process. Features a point.

  FIG. 6A is a view showing a cross section after the first CNT 12 used in the integrated circuit according to the present embodiment and extending in the direction 11 is placed at a desired position. The position where the first CNTs 12 are arranged needs to be a place where it is easy to assemble the nanoparts shown in FIG. 4 such as the gate electrode 4, the contact 7, and the electrode 8 in the subsequent process. In the present embodiment, the first CNT is installed in a vacuum chamber. In advance, both ends of the first CNT may be fixed to the electrodes of the package of the integrated circuit. The conductivity of the first CNT 12 is semiconducting, and a zigzag or chiral type CNT is preferable. In the present embodiment, fine nanodots serving as a catalyst such as Fe, Ni, or Co are formed on the electrode pad drawn out during packaging, and the zigzag type first is started from the nanodots. CNT12 was formed.

  FIG. 6B is a diagram showing a cross-sectional structure in which the gate electrode 14 is provided on the first CNT 12. As shown in FIG. 2, the gate electrode 14 is formed by depositing tungsten (W) by a vacuum deposition method or a sputtering method using a metal mesh mask, or shows metallic properties as shown in FIG. Another CNT is formed by disposing almost the entire circumference of the first CNT. As shown in FIG. 3, as a method of providing CNTs exhibiting metallic properties to be used as the gate electrode 4 on almost the entire circumference of the first CNT, manipulation using a laser, chemical reaction using a surface-modified CNT (antigen) (Including antibody reaction and the like).

  FIG. 7A is a diagram showing a cross-sectional structure after the connection region 21 is formed on the first CNT 12 having the gate electrode 14. As a typical means for forming the connection region 21 as shown in FIG. 7A, there is a method by introducing a local defect. Local defects can be introduced by using AFM (Atomic Force Microscope) and STM (Scanning Tunneling Microscope). It is also possible to form nanodots of iron, nickel, cobalt, etc. on the gate electrode 14 and form the lead electrode or contact of the gate electrode 14 starting from the nanodot.

  FIG. 7B is a cross-sectional view showing a configuration after the contact 17 is formed from the connection region 21. As shown in FIG. 7B, the contact 17 is a contact for electrical connection to the source / drain of the transistor. In some cases, the contact 17 has a device structure that is directly drawn out from the source / drain as a wiring. There may be. Such a contact 17 is preferably made of CNT exhibiting metallic properties in order to reduce resistance. In the present embodiment, armchair CNTs are formed using the connection region 21 formed in FIG. 7A as a base point.

  FIG. 8 is a cross-sectional view showing a configuration in which the wiring 18 is formed on the contact 17. As shown in FIG. 8, the wiring 18 is preferably CNT (armchair type) that exhibits metallic properties in order to be electrically connected to the contact 71. Such wiring 18 can form a large-scale integrated circuit through the steps shown in FIGS. 7A and 7B.

  Note that it was confirmed that N-type transistors and P-type transistors can be formed as electronic devices capable of forming a large-scale integrated circuit according to the present embodiment, and each of them exhibits good transistor characteristics. Furthermore, when a large scale integrated circuit (LSI) was manufactured using a circuit test pattern, there was no problem in circuit operation.

<Second Embodiment>
Next, a method for manufacturing a large-scale integrated circuit according to the second embodiment of the present invention will be described with reference to the drawings. In this embodiment mode, the connection between the first CNT exhibiting semiconducting properties and the second CNT exhibiting metallic properties is performed by a chemical reaction. As the chemical reaction, it is preferable to use formation of a peptide obtained by chemically bonding an amino group and a carboxyl group, formation of an ester or amide by dehydration condensation, or the like. In addition, when an antigen-antibody reaction is used as the chemical reaction, there is a high possibility that a preferable connection can be made when the first CNT and the second CNT are connected. Ready to assemble. Therefore, in this embodiment, an antigen-antibody reaction will be described as an example of integrated circuit manufacturing using a chemical reaction.

  First, a biologically relevant substance can be immobilized by chemically modifying a carboxyl group present on the CNT surface. For example, either an antigen or an antibody is immobilized on the CNT surface or end face. As an example of a specific method, the surface or end surface of one CNT is chemically modified with a carboxyl group, and, for example, a peptide bond is formed and immobilized by dehydration condensation of streptavicin with the carboxyl group. Next, the surface or end face of the other CNT is biotinylated. By using an antigen-antibody reaction that can occur between immobilized streptavidin and biotin, CNTs that exhibit semiconducting properties and CNTs that exhibit metallic properties are connected to produce large-scale integrated circuits by self-assembly. It becomes possible to do. In such an antigen-antibody reaction, α-fetoprotein (AFP) may be used. When the AFP is biotinylated, the chemically modified CNT can be used.

  In FIG. 9, the first CNT 22 in which the gate electrode 24 is formed by using the antigen-antibody reaction and the second CNT 38 used as the wiring are connected to each other using the antigen substance and the antibody substance immobilized on each surface. It is a figure which shows a subsequent process.

  FIG. 9A shows a state in which the antigen substance 32 is immobilized at a position on the surface of the first CNT (zigzag type or chiral type) 22 having the semiconductor characteristics provided with the gate electrode 24. FIG. As shown in FIG. 9A, the element according to the present embodiment has the first CNT 24 and the antigenic substance 32 dispersed in an organic solvent. Antigen substances 32a and 32b are immobilized in the region 25. In addition, the code | symbol 32a of Fig.9 (a) has shown the substituent (for example, carboxyl group) chemically modified on the carbon nanotube surface, and the code | symbol 32b is fix | immobilized by chemically reacting with the said chemically modified substituent. Antigen or antibody (eg, streptavicin), respectively.

  FIG. 9B is a head showing the structure after the first CNT 22 and the second CNT (armchair type) 38 are connected by an antigen-antibody reaction. First, the antibody substance 33 extending in the CNT radial direction is immobilized on the surface of the second CNT 38. Next, the second CNT 38 used as an electrode is connected to the first CNT 22 described with reference to FIG. 9A by using, for example, an antigen-antibody reaction using streptavidin or biotin.

  FIG. 10 shows a first CNT 22a provided with a gate electrode 24a and another first CNT 22b provided with a gate electrode 24 by using an antigen-antibody reaction so that the antibody substance 42 extends in the radial direction of the CNT. It is a figure which shows the structure which connected the arrange | positioned CNT using the antigen substance 43 and the antibody substance 42 which were fix | immobilized on each surface. As shown in FIG. 10, the first CNTs 22a and 22b provided with the gate electrodes 24a and 24b can be connected using an antigen-antibody reaction, and the extending directions of the CNTs are arranged in parallel to each other.

  FIG. 11 is a diagram showing a structure in which antigenic substances 61 and 63 are fixed to one end face 52a of a first CNT (zigzag type or chiral type) 52 having semiconductor characteristics provided with a gate electrode 54. The CNT 52 is a type in which the tip is closed or an open type. When the tip of the manufactured first CNT is closed, the tip of the CNT can be opened by treating the tip with oxygen plasma. In addition, even when the tip of the CNT is open, the chemical activity can be increased and the immobilization of the antigen substance 61 or the antibody substance 63 can be facilitated by subjecting the tip part to oxygen plasma treatment.

  FIG. 12 is a diagram showing a configuration in which the tip portion 52a of the first CNT 51 and the outer surface of the first CNT 22 are connected by an antigen-antibody reaction. As shown in FIG. 12, the first CNT (zigzag type or chiral type) showing semiconductor characteristics is used as the CNT to be connected, but the first CNT shows metallic characteristics. Connection with the second CNT (armchair type) and connection between the second CNT and the second CNT are also possible. As shown in FIG. 12, the antigen substance 63 (63a / 63b) provided on the end face 52a of the first CNT 51 and the antibody substance 27 (27a / 27b) provided on the surface of another first CNT 22 are combined with the antigen. It is possible to connect by an antibody reaction. By using the configuration shown in FIG. 12, CNTs can be provided so as to extend in directions perpendicular to each other.

<Third Embodiment>
Next, an element and a highly integrated circuit according to a third embodiment of the present invention will be described. In this embodiment, instead of connecting a plurality of CNTs as in the first and second embodiments, large-scale integration is performed using formation of CNTs having different diameters, formation of branched CNTs, or the like. A circuit is manufactured.

  FIG. 13 is a diagram showing a CNT having a structure in which CNTs having different diameters are smoothly joined together. As described above, the carbon nanotube is formed of a graphite sheet having a nested structure. On the other hand, when the CNT formed by the six-membered ring 65 is formed by only the six-membered ring 65, first, a CNT composed of carbon atoms (sp2 carbon) forming the six-membered ring 65 is formed. When the ring 66 is introduced, the tip is round and becomes a dome shape, and the tip of the CNT is closed. On the other hand, when the seven-membered ring 67 is introduced into the CNT, the diameter of the CNT increases. That is, as shown in FIG. 13, CNTs having different diameters can be produced by introducing a 5-membered ring 66 and a 7-membered ring 67 into the CNT formed of the 6-membered ring 65.

  FIG. 14 is a diagram showing an element having a structure in which another CNT is provided inside a CNT having a different diameter. FIG. 14A is a diagram showing a structural cross-sectional view of an element in which another CNT 74 is provided inside a CNT 73 having a different diameter. As is apparent from FIG. 14A, the structure is such that another CNT is inserted inside the CNT, the outer CNT 73 corresponds to the channel region, and the inner CNT 74 functions as a gate electrode. The external CNT 73 has a structure in which tubes having different diameters are connected to each other, and forms a channel region 73a in order to exhibit semiconductor characteristics in a region having a large diameter. In addition, the region of the external CNT 73 other than the channel region 73a has a small diameter. As the gate electrode, CNT exhibiting metallic characteristics can be used, and is inserted inside the external CNT 73. FIG. 14B is a cross-sectional structure diagram in a channel region of an element having a structure in which another CNT 74 is provided inside a CNT 73 having a different diameter (cross-sectional view taken along line BB ′ in FIG. 14A). FIG. The diameter of the channel region 73a formed in the external CNT 73 is about 50 nm, for example, and the diameter of the internal CNT 74 provided in the inside, that is, the gate electrode is about 20 to 30 nm, for example.

  In the element according to the present embodiment, since the gate electrode made of CNT is formed inside the CNT, the diameter of the element itself can be reduced. The gate voltage can be applied from both ends or one end of the inner CNT 74.

  FIG. 15 is a diagram showing a trifurcated CNT structure. By introducing a 5-membered ring 86, a 7-membered ring 87, and an 8-membered ring 88 into the CNT formed of the 6-membered ring 85, a CNT having a branched structure can be produced as shown in FIG. It becomes.

  As described above, CNTs having different diameters by combining, for example, a 5-membered ring, a 7-membered ring, and an 8-membered ring with respect to a graphite sheet formed of carbon and 6-membered ring having various structures Branched CNT structures can be produced. By controlling the carbon structure of the cyclic structure in this way, a three-dimensionally branched structure can be formed, and the degree of freedom in forming a three-dimensional network structure of a large-scale integrated circuit can be increased. .

  The present invention can be used in electronic devices and integrated circuits in which these are highly integrated.

1 is a cross-sectional view of a unit element (hereinafter referred to as “first CNT”) that forms a large-scale integrated circuit, in which a cylindrical CNT structure is cut in a radial direction, which is an element according to a first embodiment of the present invention. It is a figure FIG. 2 is a cross-sectional view showing a configuration in which the unit element of FIG. 1 is cut by a channel region 3 along the line II. In the element according to the embodiment of the present invention, the gate electrode 4 made of the second CNT having a smaller diameter than the first CNT is arranged on substantially the entire circumference of the first CNT, and the first CNT and the second CNT are arranged. It is sectional drawing (channel region of the gate electrode 4) cut in the channel region 3 of the unit element B which has the structure formed so that each outer periphery of each CNT may be in electrical contact. It is a figure which shows the structural example of the integrated circuit which gave wiring to the unit element demonstrated with reference to FIGS. FIG. 5 is a diagram showing an example in which a unit element shown in FIG. 4 is formed with a three-dimensional network structure by wiring, and is a diagram showing a structure of an integrated circuit in which unit elements are integrated on a large scale. FIG. 6A is a view showing a cross section after the first CNT 12 used in the integrated circuit according to the present embodiment is installed at a desired position. FIG. 6B is a diagram showing a cross-sectional structure in which the gate electrode 14 is provided on the first CNT 12. FIG. 7A is a diagram showing a cross-sectional structure after the connection region 21 is formed for the first CNT provided with the gate electrode. FIG. 7B is a cross-sectional view showing the configuration after the contact is formed from the connection region. It is sectional drawing which shows the structure which formed the wiring with respect to the contact. The process after connecting the 1st CNT which formed the gate electrode by using the antigen antibody reaction, and the 2nd CNT used as wiring using the antigen substance and antibody substance which were immobilized on each surface is shown. FIG. Using the antigen-antibody reaction, each surface has a first CNT provided with a gate electrode and another CNT provided with a gate electrode in which an antibody is arranged so as to extend in the radial direction of the CNT. It is a figure which shows the structure connected using the antigen substance and antibody substance which were fix | immobilized. It is a figure which shows the structure which fixed the antigenic substance to the end surface of 1st CNT (zigzag type or chiral type) which shows the semiconductor characteristic which provided the gate electrode. It is a figure which shows the structure which connected the front-end | tip part of 1st CNT, and the outer surface of 1st CNT by antigen antibody reaction. It is a figure which shows CNT which has the structure where CNTs from which a diameter differs were connected smoothly. FIG. 14A is a diagram showing an element having a structure in which another CNT is provided inside a CNT having a different diameter. FIG. 14A is a cross-sectional view of the structure of an element in which another CNT is provided inside a CNT having a different diameter. FIG. FIG. 14B is a cross-sectional structure diagram in a channel region of an element having a structure in which another CNT is provided inside CNTs having different diameters (cross-sectional view taken along line BB ′ in FIG. 14A). It is. It is a figure which shows the CNT structure branched into three parts.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Unit element length, 2 ... Unit element diameter, 3 ... Unit element channel region, 4 ... Gate electrode, 5 ... Unit element source / drain region, 6 ... Element isolation region, 7 ... Contact, 8 ... Wiring, 9 ... unit element, 10 ... electrically insulating gap, 11 ... connection region, 12 ... antigen substance, 13 ... antibody substance, 14 ... first carbon nanotube (zigzag type or chiral type) 15 ... 6-membered ring composed of carbon atoms, 16 ... 5-membered ring composed of carbon atoms, 17 ... 7-membered ring composed of carbon atoms, 18 ... 8-membered ring composed of carbon atoms, 21 ... connection region, 24 ... gate electrode, 38 ... second CNT, 32 (32a, 32b) ... antigen substance, 33 ... antibody substance, 42 ... antibody substance, 43 ... antigen substance, 52 ... first CNT, 52a ... One end face, 54... Gate electrode, 61, 6 ... antigen substance, 65 ... 6-membered ring, 66 ... 5-membered ring, 67 ... 7-membered ring, 73 ... external CNT, 73a ... channel region, 74 ... internal CNT, 86 ... 5-membered ring, 87 ... 7-membered ring, 88 ... 8-member ring.

Claims (6)

An element including a first carbon nanotube and operating based on conduction of carriers in the extending direction of the first carbon nanotube,
The electrode of the element is formed of second carbon nanotubes arranged substantially all around the first carbon nanotube;
The element, wherein the second carbon nanotube is in contact with the outer surface of the first carbon nanotube at the outer surface thereof . The diameter of the second carbon nanotube is smaller than the diameter of the first carbon nanotube
The device according to claim 1. An integrated circuit including a plurality of unit elements each including a first carbon nanotube and operating based on conduction of carriers in the extending direction of the first carbon nanotube;
In at least one of the unit elements, an electrode of the unit element is formed by the second carbon nanotubes disposed on substantially the entire circumference of the first carbon nanotubes, and the second carbon nanotubes are The outer surface is in contact with the outer surface of the first carbon nanotube.
An integrated circuit characterized by that. Forming a first carbon nanotube having semiconducting properties;
Forming a wiring with a second carbon nanotube showing metallic properties from a connection region with the first carbon nanotube,
The method for manufacturing a large-scale integrated circuit you comprising the step of introducing a locally defective in the first carbon nanotube forming the connection region. A first carbon nanotube having a second diameter larger than the first diameter of both end portions in the central portion, the central portion having the second diameter operating as a channel region;
A second carbon nanotube inserted into the first carbon nanotube and having a metallic property of operating as a gate electrode;
And an element that operates based on carrier conduction in the extending direction of the first carbon nanotube. An integrated circuit including a plurality of unit elements each including a first carbon nanotube and operating based on conduction of carriers in the extending direction of the first carbon nanotube;
At least one of the unit elements has a second diameter larger than the first diameter of both end portions in the central portion, and the first central portion having the second diameter operates as a channel region. An integrated circuit comprising: a carbon nanotube; and a second carbon nanotube inserted into the first carbon nanotube and having a metallic characteristic that operates as a gate electrode .

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