JP4488366B2 - Method for manufacturing solid-state imaging device - Google Patents

Description

  The present invention relates to a solid-state imaging device and a method of manufacturing the same that can make the readout characteristics uniform in each pixel unit when the charge detection unit is shared by a plurality of pixel units, and the solid-state imaging device as an imaging unit. The present invention relates to an electronic information apparatus having a digital camera such as a digital video camera and a digital still camera used, and an image input device such as an image input camera, a scanner, a facsimile, and a camera-equipped mobile phone device.

  As a conventional solid-state imaging device, on a semiconductor substrate, a plurality of light receiving units that convert incident light into signal charges and accumulate, a transfer unit for reading out the charges accumulated in each light receiving unit, and accumulation in each light receiving unit A read gate electrode provided on the transfer unit for controlling the readout of the read charge, and a charge detection unit provided in common for the light receiving units of two or more pixel units for detecting the read charge There are known CMOS (complementary metal oxide semiconductor) solid-state imaging devices in which a plurality of two-dimensionally are provided.

  A conventional CMOS solid-state imaging device will be described below with reference to FIGS. First, a configuration example of a conventional CMOS solid-state imaging device will be described in detail with reference to FIG.

  FIG. 7A is a top view showing a configuration of a conventional solid-state imaging device, FIG. 7B is a cross-sectional view taken along the line AA ′ in FIG. 7A, and FIG. FIG. 7D is a potential diagram of the AA ′ line portion during charge transfer, and FIG. 7E is the BB ′ line of FIG. 7A. It is a potential diagram of a part.

  7A to 7C, the conventional solid-state imaging device 100 is shared by the light receiving portions 101a and 101b, the read gate electrodes 102a and 102b, and the light receiving portions 101a and 101b every two pixel portions. And a reset gate electrode 104 and a reset drain 105 for resetting signal charges of the charge detection unit 103 are provided.

  As these light receiving portions 101a and 101b, a charge storage region 113 made of an N-type impurity region is provided in a P-type diffusion layer 111 on an N-type semiconductor substrate 110, and a P + region 114 is provided on the surface side thereof. The read gate electrodes 102a and 102b are each provided on the P-type impurity region 112 constituting the transfer portion via the gate oxide film 116, and are provided for controlling the read voltage of the transfer portion. Further, the charge detection unit 103 is configured by an N-type impurity region 115.

  The operation of the conventional CMOS solid-state imaging device 100 having the above configuration will be described.

  First, light (subject light) incident on the imaging region of the CMOS solid-state imaging device 100 is photoelectrically converted into signal charges by the light receiving units 101a and 101b. The signal charges photoelectrically converted by the light receiving portions 101a and 101b are temporarily stored in the charge storage regions 113 of the light receiving portions 101a and 101b, respectively.

  Next, the signal charges accumulated in the light receiving portions 101a and 101b are read out to the charge detection portion 103 side via the P-type impurity region 112 of the transfer portion by applying a predetermined voltage to the read gate electrodes 102a and 102b.

  A captured image signal can be obtained by amplifying a potential corresponding to the signal charge read by the charge detection unit 103.

  A method for manufacturing the conventional CMOS solid-state imaging device 100 will be described with reference to FIGS.

  8A to 8D are top views for explaining a method for manufacturing the conventional solid-state imaging device 100, respectively.

  In manufacturing the conventional CMOS type solid-state imaging device 100, first, as shown in FIGS. 7B and 7C, P-type diffusion is performed by performing ion implantation treatment of boron or the like on the N-type semiconductor substrate 110 and heat treatment. A layer (P well) 111 is formed.

  Next, as shown in FIG. 8A, the activated region and the deactivated region are separated on the P-type diffusion layer (P well) 111 by using a resist pattern 121 (the inside of the shape portion is an opening). A thermal oxide film (not shown) is formed.

  Further, as shown in FIG. 8B, by performing ion implantation processing of boron or the like on the P-type diffusion layer (P well) 111 using the resist pattern 122 (the inside of the shape portion is an opening), As shown in FIGS. 7B and 7C, an impurity region 112 for controlling the read voltage of the transfer unit is formed.

Further, by performing thermal oxidation treatment on the surface of the N-type semiconductor substrate at a temperature of 1000 ° C. to 1100 ° C. in an O ₂ gas and HCl gas atmosphere, the results shown in FIGS. 7B and 7C are obtained. Thus, the gate oxide film 116 is formed.

  Thereafter, a laminated film of a polysilicon film and a W (tungsten) film is formed by a CVD (Chemical Vapor Deposition) method and a sputtering method, and dry etching is performed, as shown in FIG. 102a and 102b and the reset gate electrode 104 are formed.

  Further, as shown in FIG. 8D, ion implantation of phosphorus or arsenic is performed at a position corresponding to the light receiving portions 101a and 101b on the gate oxide film 116 using a resist pattern 123 (the inside of the shape portion is an opening). By performing the treatment and the heat treatment, as shown in FIGS. 7B and 7C, N-type impurity regions to be the charge storage regions 113 of the light receiving portions 101a and 101b are formed. Each charge storage region 113 is formed by self-alignment with respect to the read gate electrodes 102a and 102b.

  Further, by performing an ion implantation process of arsenic using a pattern (not shown), as shown in FIGS. 7A to 7C, the charge detection unit 103 (N-type impurity region 115) and the reset drain unit 105 is formed.

  Thereafter, ion implantation treatment of boron or the like and heat treatment are performed using a pattern (not shown) to form the surface P + regions 114 of the light receiving portions 101a and 101b as shown in FIGS. 7 (a) to 7 (c). .

  Here, as shown in FIGS. 7A to 7C, a structure in which the charge detection unit 103 is shared by the upper and lower light receiving units 101a and 101b will be described.

  By sharing the charge detection unit 103 for each of the two upper and lower light receiving units 101a and 101b, the area of the light receiving units 101a and 101b can be increased by the shared amount compared to the case where the charge detection unit 103 is provided for each pixel. A large amount can be secured, and the sensitivity characteristic with respect to incident light can be improved.

  As described above, in the conventional solid-state imaging device 100 in which the charge detection unit 103 is shared by the plurality of light receiving units 101a and 101b, when charge read operation is performed, charge accumulation, charge read, and reset operations are performed in two directions, upper and lower. By controlling the light receiving units 101a and 101b with good timing, a good captured image signal can be obtained.

For example, in Patent Document 1, by forming the overlap between the charge storage layer of the light receiving portion and the surface P + layer with good controllability, a depression is formed in the potential in the transfer portion during charge transfer (in the depression 117 in FIG. 7B). In other words, a solid-state imaging device that can completely transfer signal charges without causing occurrence of afterimages and suppress the occurrence of afterimages is disclosed.
Japanese Patent Laid-Open No. 11-126893

  In the conventional CMOS solid-state imaging device described above, it has been found that the charge reading from the light receiving portions 101a and 101b to the charge detecting portion 103 is greatly affected by the formation state of the P-type impurity region 112 constituting the transfer portion. . This is because the amount of charge that can be accumulated in the light receiving unit and the read voltage for reading the accumulated charge are affected by the height of the potential barrier of the transfer unit. Therefore, the formation state of the P-type impurity region 112 in the transfer unit greatly affects the characteristics of the CMOS solid-state imaging device 100.

  In the conventional CMOS solid-state imaging device 100, the formation state of the charge accumulation region 113 of each light receiving portion 101a and 101b and the P-type impurity region 112 of the transfer portion will be described with reference to FIGS.

  9A is a top view for explaining the formation state of the charge storage region of the light receiving unit in the solid-state imaging device of FIG. 7, and FIG. 9B is a cross-sectional view taken along the line AA ′ in FIG. FIG. 9C is a cross-sectional view taken along line BB ′ in FIG. 10A is a top view for explaining the formation state of the impurity region of the transfer portion in the solid-state imaging device of FIG. 7, FIG. 10B is a cross-sectional view taken along the line AA ′ in FIG. 10 (c) is a cross-sectional view taken along line BB ′ of FIG.

  In the manufacture of the conventional CMOS solid-state imaging device 100, the charge storage regions 113 of the light receiving portions 101a and 101b and the impurity region 112 of the transfer portion are formed by ion implantation processing. As shown in FIGS. 9 and 10, the ion implantation process at this time has a tilt angle of 7 degrees from the direction perpendicular to the substrate plane and is aligned vertically using resist patterns 122 and 123. The light receiving portions 101a and 101b are performed from the top 131 to the bottom 131 in the drawing.

  In this case, the formation states (positions) of the charge storage regions 113 of the upper and lower light receiving portions 101a and 101b and the impurity regions 112 of the transfer portion with respect to the read gate electrodes 102a and 102b are different. For example, in the upper light receiving portion 101a, the charge accumulation region 113 is formed so as to sink under the readout gate electrode 102a as shown in FIG. Further, as shown in FIG. 9B, the impurity region 112 of the transfer portion is formed in a form close to the charge detection portion 103 (impurity region 115) due to the shadowing effect of the resist pattern 122. On the other hand, in the lower light receiving portion 101b, the charge accumulation region 113 is away from the read gate electrode 102b (impurity region 112) due to the shadowing effect of the resist pattern 123, as shown in FIG. Formed with. Further, as shown in FIG. 9C, the impurity region 112 of the transfer portion is also formed in a form close to the light receiving portion 101b (charge storage region 113) side due to the influence of shadowing of the resist pattern 122.

  As described above, when nonuniformity occurs in the formation positions of the charge accumulation region 113 and the impurity region 112, there arises a problem that read characteristics from the light receiving portions 101a and 101b become nonuniform. This problem will be described with reference to FIGS. 7 (d) and 7 (e).

  In FIG. 7D and FIG. 7E, the vertical axis indicates the potential of the portion along each cross section. At the time of charge transfer, the potential of the transfer unit is lowered by applying a predetermined voltage to the read gate electrodes 102a and 102b, so that the signal charge accumulated in the light receiving unit (charge storage region 113) is transferred to the transfer unit (impurity region 112). Then, it is read out to the charge detection portion 103 (impurity region 115).

  As shown in FIG. 7B, in the upper light receiving portion 101a, the charge accumulation region 113 is formed so as to be embedded under the readout gate electrode 102a, and the impurity region 112 of the transfer portion is formed in the charge detection portion 103 ( It is formed in a shape close to the impurity region 115) side. In this case, as encircled in FIG. 7D, a potential dent 117 is generated in the charge accumulation region 113 reaching the transfer portion during charge transfer in the upper and lower pixel portions. When such a potential depression 117 is generated, the signal charge is not completely transferred, causing a problem that an afterimage is generated and the state of the imaging screen is deteriorated.

  Further, as shown in FIG. 7C, in the lower light receiving portion 101b, the charge accumulation region 113 is formed in a direction away from the readout gate electrode 102b, and the impurity region 112 of the transfer portion is located on the light receiving portion 101b side. Formed in a closed form. In this case, as shown in FIG. 7E, no potential dent is generated, and no charge transfer residue is generated unlike the upper light receiving unit 101a, and the upper light receiving unit 101a and the lower light receiving unit 101b do not. The read characteristics will be different.

  On the other hand, in the solid-state imaging device disclosed in Patent Document 1, as described above, by forming the overlap between the charge accumulation region of the light receiving unit and the surface P + region in a controlled manner, the transfer unit has a potential at the time of charge transfer. Since no depression is generated, the charge can be completely transferred and the occurrence of afterimage can be controlled.

  However, this Patent Document 1 does not describe any ion implantation direction of the charge accumulation region 113 and the impurity region 112, and the charge accumulation region 113 and the impurity region 112 are transferred from the implantation direction 131 shown in FIGS. 9 and 10. When ion implantation is performed, the position with respect to each readout gate electrode becomes uneven in the upper and lower pixel portions, and the same problem occurs.

  The present invention solves the above-described conventional problems, and makes it possible to make the readout characteristics from each light receiving portion uniform, and reduce the readout voltage, a manufacturing method thereof, and an electronic information device using the same. The purpose is to provide.

Method for manufacturing a solid-state imaging device of the present invention, each of a plurality of light receiving portions for photoelectrically converting incident light into signal charges, the charge detection unit, which is shared for each light receiving portion of the plurality of transfer under each readout gate electrode In the method of manufacturing the solid-state imaging device that reads the signal charges through the respective sections, the positions of the end faces of the impurity region of the transfer section and the read gate electrode corresponding to the impurity area are the same in each read gate electrode from the ion implantation direction and the impurity region forming step of the transfer unit for performing ion implantation comprising, after forming the readout gate electrode via a gate oxide film on the impurity region of the transfer section, the charge accumulation region of the light receiving portion and said a charge storage region forming step the position of the respective end faces of the read gate electrodes corresponding to the charge accumulation region by ion implantation from ion implantation direction is the same in the plurality of light receiving portions Yes, and a plurality of light receiving portions charge detecting unit is shared are formed are arranged in a row on the semiconductor substrate, the impurity region forming step of the transfer unit constitutes a respective transfer unit From the direction perpendicular to the arrangement direction of the plurality of light receiving portions, and having a predetermined inclination angle from the direction perpendicular to the surface of the semiconductor substrate so that each position of the impurity region with respect to the readout gate electrode is constant Ion implantation is performed, and the charge accumulation region forming step is performed in a direction perpendicular to the surface of the semiconductor substrate so that the positions of the charge accumulation regions of the light receiving portions constituting the plurality of light receiving portions with respect to the readout gate electrode are constant. The ion implantation is performed from a direction perpendicular to the arrangement direction of the plurality of light receiving portions and having a predetermined inclination angle, thereby achieving the above object. In addition, the method for manufacturing a solid-state imaging device according to the present invention includes a plurality of light receiving units that can store incident light on a semiconductor substrate by converting the incident light into signal charges, and each signal charge stored in each of the plurality of light receiving units. Each of the transfer units for reading the signal, a read gate electrode provided on each of the transfer units for controlling the reading of each signal charge accumulated in each of the plurality of light receiving units, and each of the transfer units. In a manufacturing method of a solid-state imaging device having a charge detection unit provided in common to each light receiving unit of a plurality of pixel units in order to detect each signal charge read in this manner, the impurity region of each transfer unit An ion implantation direction is set so that each position with respect to the read gate electrode is constant, and an ion implantation process is performed to form an impurity region of each transfer unit, and an impurity region forming step of the transfer unit, Impure After forming the read-out gate electrode via a gate oxide film on the region, and the position relative to the readout gate electrode of the charge storage region of the light receiving elements is set the ion implantation direction to be constant ion implantation process go to have a charge accumulation region forming step of forming respectively a charge accumulation region of the light receiving elements, forming a plurality of light receiving portions charge detecting unit is shared is arranged in a row on said semiconductor substrate The step of forming the impurity region of the transfer unit is performed at a predetermined inclination angle from the direction perpendicular to the surface of the semiconductor substrate so that each position of the impurity region constituting the transfer unit with respect to the read gate electrode is constant. And the ion implantation is performed from a direction perpendicular to the arrangement direction of the plurality of light receiving portions, and the charge accumulation region forming step includes charge accumulation of each light receiving portion constituting the plurality of light receiving portions. Ions from a direction perpendicular to the direction of the normal to the surface of the semiconductor substrate and perpendicular to the arrangement direction of the plurality of light receiving portions, so that each position of the region with respect to the readout gate electrode is constant Injection is performed , and the above-mentioned object is achieved thereby.

  Still preferably, in a method for manufacturing a solid-state imaging device according to the present invention, the plurality of light receiving units sharing the charge detection unit are arranged in the vertical direction or the horizontal direction on the semiconductor substrate.

Further, preferably, in the manufacturing method of the solid-state imaging device of the present invention, it is formed a plurality of light-receiving portion to which the charge detecting unit is shared is arranged in a plurality of directions on the semiconductor substrate, the transfer unit The impurity region forming step has a predetermined inclination angle with respect to the direction perpendicular to the surface of the semiconductor substrate so that each position of the impurity region constituting each transfer portion with respect to the read gate electrode is constant, and after the ion implantation from a direction perpendicular to the array direction of the plurality of light receiving portions, the relative ion implantation direction change by 180 degrees by ion implantation to said semiconductor substrate, said charge storage region formation step A predetermined angle of inclination from the direction perpendicular to the surface of the semiconductor substrate so that each position of the charge storage region constituting the plurality of light receiving portions with respect to the readout gate electrode is constant. A, and, after the ion implantation from a direction perpendicular to the predetermined arrangement direction of the light receiving portions of the plurality of ion implantation is performed by changing the relative 180 degrees of ion implantation direction with respect to the semiconductor substrate .

  Still preferably, in a method for manufacturing a solid-state imaging device according to the present invention, the plurality of light receiving units sharing the charge detection unit are arranged in the vertical direction and the horizontal direction on the semiconductor substrate.

  Further preferably, in the method of manufacturing the solid-state imaging device according to the present invention, the impurity region forming step of the transfer unit may be performed on the readout gate electrode so that the impurity region of the transfer unit is formed adjacent to the light receiving unit side. On the other hand, ion implantation is performed in a direction from the side opposite to the light receiving unit.

  Further preferably, the charge storage region forming step in the method of manufacturing a solid-state imaging device according to the present invention is such that the charge storage region is formed so as to sink under the impurity region of the transfer portion under the read gate electrode. Ion implantation is performed on the readout gate electrode in the direction from the light receiving portion side.

Further preferably, in the method of manufacturing a solid-state imaging device according to the present invention, phosphorus or arsenic is ion-implanted into a P-type diffusion layer on an N-type semiconductor substrate in order to form a charge storage region of the light-receiving unit, and the transfer unit Boron ions are implanted to form the impurity region.
Still preferably, in a method of manufacturing a solid-state imaging device according to the present invention, the vertical direction in the impurity region forming step of the transfer unit and the vertical direction in the charge storage region forming step face each other in opposite directions. Direction.
Further preferably, in the method of manufacturing a solid-state imaging device according to the present invention, the change of the ion implantation direction in the impurity region forming step of the transfer unit and the change of the ion implantation direction in the charge storage region forming step include This is performed by rotating the semiconductor substrate or the ion implantation direction.

  The operation of the present invention will be described below with the above configuration.

  In the present invention, in the solid-state imaging device in which the charge detection unit is shared for each of the plurality of light receiving units, the ion implantation direction is set so that the position of the impurity region constituting each transfer unit with respect to the readout gate electrode is constant Then, ion implantation is performed. Further, ion implantation is performed by setting the ion implantation direction so that the position of the charge storage region constituting each light receiving portion with respect to the readout gate electrode is constant.

  For example, the impurity region of the transfer unit is formed by implanting ions of phosphorus or arsenic from a direction perpendicular to the arrangement direction of each light receiving unit and having a predetermined inclination angle with respect to the surface of the semiconductor substrate. Form. In addition, when each light receiving unit sharing the charge detection unit is formed in a line of two pixels or three or more pixels on the semiconductor substrate, it has a predetermined inclination angle from the direction perpendicular to the surface of the semiconductor substrate, In addition, boron or the like is ion-implanted from a direction perpendicular to the arrangement direction of the light receiving portions to form a charge accumulation region of each light receiving portion.

  Furthermore, when a plurality of light receiving parts sharing the charge detection part are formed in four or more pixels and arranged in a plurality of directions on the semiconductor substrate, they have a predetermined inclination angle from the direction perpendicular to the surface of the semiconductor substrate. In addition, the ion implantation is sequentially performed while rotating the ion implantation direction so that the ion implantation is performed from a direction perpendicular to a predetermined arrangement direction of the light receiving portions.

  Therefore, the position of the charge storage region constituting each light receiving portion with respect to the read gate electrode is constant, and the position of the impurity region constituting the transfer portion with respect to the read gate electrode is also constant, so the read characteristics from each light receiving portion are uniform. Can be realized.

  Further, the charge storage region of each light receiving portion is formed so as to be deeply buried under the impurity region of the transfer portion below the readout gate electrode, and the impurity region of the transfer portion is formed close to the light receiving portion side. As a result, it is possible to completely read out the accumulated charges and suppress the occurrence of afterimages without causing the conventional potential depression. Further, the read voltage can be reduced by forming the charge accumulation region of the light receiving portion so as to be deeply buried under the impurity region of the transfer portion below the read gate electrode.

  As described above, according to the present invention, in the solid-state imaging device in which the charge detection unit is shared for each of the plurality of light receiving units, by controlling the ion implantation direction, the charge storage region constituting each light receiving unit can be read Since the position can be made constant and the position of the impurity region constituting the transfer part with respect to the readout gate electrode can be made constant, the readout characteristics from each light receiving part can be made uniform.

  In addition, the charge accumulation region of the light receiving portion is formed so as to be deeply buried under the readout gate electrode, and the impurity region of the transfer portion is formed so as to be close to the light receiving portion side, so that the potential of the conventional potential can be obtained. It is possible to completely read out the accumulated charges without generating a dent and suppress the occurrence of afterimages. Further, the read voltage can be reduced by forming the charge accumulation region of the light receiving portion so as to be deeply buried under the read gate electrode.

  Embodiments 1 to 3 of the solid-state imaging device of the present invention will be described below in detail with reference to the drawings.

(Embodiment 1)
In the first embodiment, a CMOS type solid-state imaging device in which a charge detection unit is shared by light receiving units of two pixel units will be described.

  1A is a top view illustrating a configuration example of a solid-state imaging device according to Embodiment 1 of the present invention, FIG. 1B is a cross-sectional view taken along the line CC ′ in FIG. 1A, and FIG. FIG. 1D is a cross-sectional view taken along the line DD ′ of FIG. 1A, FIG. 1D is a potential diagram of the CC ′ line portion of FIG. 1A during charge transfer, and FIG. It is a potential diagram of a DD 'line part.

  1A to 1C, the solid-state imaging device 20 according to the first embodiment converts a plurality of incident light into signal charges and accumulates them for each of two pixel portions on a semiconductor substrate 10. The light receiving units 1a and 1b, the transfer unit (impurity region 12) for reading the signal charges accumulated in the light receiving units 1a and 1b, and the readout of the signal charges accumulated in the light receiving units 1a and 1b. For this purpose, read gate electrodes 2a and 2b provided on the transfer unit and a charge detection unit 3 shared by the light receiving units 1a and 1b for detecting the read signal charges are provided. A reset gate electrode 4 and a reset drain 5 for resetting the signal charges of the unit 3 are provided. In the solid-state imaging device 20, a plurality of such pairs of light receiving portions 1a and 1b (two pixel portions) are provided two-dimensionally in the imaging region.

  In these light receiving portions 1 a and 1 b, a charge storage region 13 made of an N-type impurity region is provided in a P-type diffusion layer 11 on an N-type semiconductor substrate 10, and a P + region 14 is provided on the surface side thereof. Further, the read gate electrodes 2a and 2b are provided on the P-type impurity region 12 via the gate oxide film 16, and the read voltage of the transfer portion can be controlled. Further, the charge detection unit 3 is configured by an N-type impurity region 15.

  Here, a method for manufacturing the solid-state imaging device according to the first embodiment will be described with reference to FIGS.

  2A to 2D are top views for explaining each step of the method for manufacturing the solid-state imaging device 20 of FIG. In the first embodiment and the following second and third embodiments, the formation pattern shape of each implantation region is the same as the conventional method for manufacturing the solid-state imaging device 100.

  In the manufacture of the solid-state imaging device 20 of the first embodiment, first, as shown in FIGS. 1B and 1C, by performing ion implantation processing such as boron and heat treatment on the N-type semiconductor substrate 10. A P type diffusion layer (P well) 11 is formed.

  Next, as shown in FIG. 2A, a thermal oxide film (not shown) for separating the activated region and the deactivated region is formed using the resist pattern 21 (the opening in the shape portion). Form.

  Further, as shown in FIG. 2B, by performing ion implantation treatment of boron or the like using the resist pattern 22 (the inside of the shape portion is an opening), FIG. 1B and FIG. As shown, the impurity region 12 for controlling the read voltage of the transfer part (P-type impurity region 12) is formed. The ion implantation at this time is performed from a direction perpendicular to the arrangement direction of the light receiving portions 1a and 1b and having a predetermined inclination angle from the direction perpendicular to the surface of the semiconductor substrate. In the first embodiment, the light receiving portions 1a and 1b sharing the charge detecting portion 3 are formed side by side on the semiconductor substrate, and the impurity region 12 of the transfer portion is located closer to the light receiving portion side. Therefore, as shown in FIG. 2, ion implantation is performed from right to left direction 31 as shown in FIG. Thereby, the impurity region 12 of the transfer portion can be formed at a uniform position with respect to the read gate electrode in the upper and lower pixels 1a and 1b.

Furthermore, by performing thermal oxidation treatment on the surface of the N-type semiconductor substrate 10 at a temperature of 1000 ° C. to 1100 ° C. in an O ₂ gas and HCl gas atmosphere, it is shown in FIGS. 1B and 1C. Such a gate oxide film 16 is formed.

  Thereafter, a laminated film of a polysilicon film and a W (tungsten) film or the like is formed by a CVD (Chemical Vapor Deposition) method and a sputtering method, and dry etching is performed, as shown in FIG. 2a and 2b and the reset gate electrode 4 are formed.

  Further, as shown in FIG. 2D, by performing ion implantation processing such as phosphorus or arsenic and heat treatment using the resist pattern 23 (the inside of the shape portion is an opening), FIG. 1B and FIG. As shown in c), an N-type impurity region to be the charge storage region 13 of the light receiving portions 1a and 1b is formed. The charge storage region 13 is formed by self-alignment with respect to the read gate electrodes 2a and 2b. The ion implantation at this time is performed from a direction perpendicular to the arrangement direction of the light receiving portions 1a and 1b and having a predetermined inclination angle from the direction perpendicular to the surface of the semiconductor substrate. In the first embodiment, the light receiving portions 1a and 1b sharing the charge detecting portion 3 are formed side by side on the semiconductor substrate, and the charge accumulation regions 13 of the light receiving portions 1a and 1b are read out and the gate electrode 2a and 2b has a slope of 7 degrees with respect to the vertical direction of the semiconductor substrate plane, and as shown in FIG. 2, with respect to the drawings of FIG. 1 and FIG. Ion implantation is performed from the direction 32 from the left to the right. Thereby, the charge accumulation regions 13 of the light receiving portions 1a and 1b can be formed at uniform positions with respect to the readout gate electrodes 2a and 2b in the upper and lower pixels 1a and 1b.

  Furthermore, by performing ion implantation of arsenic or the like using a resist pattern (not shown), as shown in FIGS. 2A to 2C, the charge detection unit 3 (N-type impurity region 15) and the reset drain unit 5 is formed.

  Thereafter, ion implantation of boron or the like and heat treatment are performed using a resist pattern (not shown) to form a surface P + region 14 of the light receiving portion as shown in FIG.

  Next, in the solid-state imaging device 20 according to the first embodiment, the respective states of formation of the charge accumulation regions 13 of the light receiving portions 1a and 1b and the impurity regions 12 of the transfer portion will be described in detail with reference to FIGS. To do.

  3A is a top view for explaining the formation state of the charge storage regions 13 of the light receiving portions 1a and 1b in the solid-state imaging device 20 of FIG. 1, and FIG. 3B is a plan view of FIG. CC 'line sectional drawing and FIG.3 (c) are DD' line sectional drawings of (a). 4A is a top view for explaining the formation state of the impurity region 12 of the transfer portion in the solid-state imaging device of FIG. 1, and FIG. 4B is a cross-sectional view taken along the line CC ′ of FIG. FIG. 4C is a cross-sectional view taken along the line DD ′ in FIG.

  In the manufacture of the CMOS type solid-state imaging device 20 of Embodiment 1, the charge storage regions 13 of the light receiving portions 1a and 1b and the impurity region 12 of the transfer portion are formed by ion implantation processing.

  As shown in FIGS. 3A to 3C, the boron ion implantation process for the impurity region 12 of the transfer portion is performed in the implantation direction 31 from the right side to the left side of the drawing. For this reason, due to the shadowing effect of the resist pattern 22, the impurity region 12 of the transfer portion is formed so as to be closer to the light receiving portions 1a and 1b with respect to the read gate electrodes 2a and 2b. The positions with respect to the read gate electrodes 2a and 2b are formed uniformly.

  Further, as shown in FIGS. 4A to 4C, the arsenic or phosphorus ion implantation process for the charge storage regions 13 of the light receiving portions 1a and 1b is performed from the implantation direction 32 from the left to the right in the drawing. . For this reason, the influence of shadowing of the resist pattern 23 is reduced, and the charge accumulation region 13 of the light receiving portion is formed so as to sink under the readout gate electrodes 2a and 2b. Thus, the positions relative to the read gate electrodes 2a and 2b are formed uniformly.

  As a result, the positions of the impurity region 12 of the transfer unit and the charge storage regions 13 of the light receiving units 1a and 1b are uniformly formed with respect to the read gate electrodes 2a and 2b in the upper and lower pixel units, and the read characteristics and the like are made uniform. can do.

  In FIG. 1D and FIG. 1E, the vertical axis indicates the potential of the portion along each cross section. At the time of charge transfer, the potential of the transfer unit is lowered by applying a predetermined voltage to the read gate electrodes 2a and 2b. Therefore, the signal charges accumulated in the charge storage regions 13 of the light receiving units 1a and 1b are transferred to the transfer unit (impurity region). 12) to be read out to the charge detector 3 (impurity region 15).

  By injecting arsenic or phosphorus from the injection direction 32 into the charge storage regions 13 of the light receiving units 1a and 1b and injecting boron from the injection direction 31 into the impurity region 12 of the transfer unit, the light receiving units 1a and 1b Each charge storage region 13 of 1b is formed in such a manner as to be buried under the impurity region 12 below the read gate electrodes 2a and 2b, and the impurity region 12 of the transfer portion is formed with respect to the read gate electrodes 2a and 2b. Thus, the light receiving portions 1a and 1b are formed close to each other. In this case, the potential depression 117 that occurs in the conventional method for manufacturing a solid-state imaging device does not occur. For this reason, it is possible to completely read out the electric charges accumulated in the light receiving portions 1a and 1b and suppress the occurrence of afterimages. Further, since each charge storage region 13 of the light receiving portions 1a and 1b is formed so as to sink under the impurity region 12 below the read gate electrodes 2a and 2b, there is no potential depression 117, and the read gate electrode The influence of the voltage applied to 2a and 2b on each charge storage region 13 is reduced, and the read voltage can be reduced.

In the first embodiment, the structure in which the charge detection unit 3 is shared by the upper and lower pixel units as illustrated in FIGS. 1A to 1C has been described. However, the charge detection unit 3 includes two charge detection units 3. In the structure shared by the light receiving portions 1a and 1b, the arrangement direction of the pixel portions is not limited to the vertical direction (or the vertical direction) but may be the horizontal direction (or the horizontal direction intersecting the vertical direction) or the oblique direction. . The direction 31 in which the impurity region 12 of the transfer portion is implanted is formed in a direction near the light receiving portions 1a and 1b with respect to the read gate electrodes 2a and 2b, and the charge accumulation regions 13 of the light receiving portions 1a and 1b As long as the injection direction 32 is a direction formed so as to be embedded in the readout gate electrodes 2a and 2b, any arrangement direction of the pixel portions can be applied.
(Embodiment 2)
In the second embodiment, a CMOS type solid-state imaging device in which a charge detection unit is shared by light receiving units of three or more pixels arranged in a row will be described.

  5A is a top view illustrating a configuration example of the solid-state imaging device according to the second embodiment of the present invention, and FIG. 5B is a cross-sectional view taken along line E-E ′ of FIG.

  5A and 5B, in the solid-state imaging device 20A of the second embodiment, a plurality of light receiving portions 1a, 1b, 1c,... Are arranged in a line in the vertical direction on the semiconductor substrate 10. , And read gate electrodes 2a, 2b, 2c,... Provided on the transfer portion (impurity region 12) for controlling the reading of the signal charges accumulated in the light receiving portions 1a, 1b, 1c,. .. And a charge detection unit 3 shared by the light receiving units 1a, 1b, 1c,... For detecting the read signal charges. In the solid-state imaging device 20A, a plurality of such sets of light receiving portions 1a, 1b, 1c,... Are provided in a two-dimensional manner in the imaging region.

  Each of the light receiving portions 1a, 1b, 1c,... Is provided with a charge transfer region 13 made of an N-type impurity region in a P-type diffusion layer 11 on the N-type semiconductor substrate 10, and a P + region 14 on the surface side thereof. Is provided. Further, the read gate electrodes 2a, 2b, 2c,... Are provided on the P-type impurity region 12 via the gate oxide film 16 to control the read voltage of the transfer portion (impurity region 12) and the like. Is provided. Further, the charge detection unit 3 is configured by an N-type impurity region 15.

  In the solid-state imaging device 20A according to the second embodiment, since the light receiving portions 1a, 1b, 1c,... Are arranged in the vertical direction, boron ion implantation processing for each impurity region 12 of the transfer portion is performed as shown in FIG. As shown in FIG. 4, the injection is performed from the injection direction 33 from the right side to the left side of the drawing. Thereby, the impurity region 12 of the transfer part is formed in a shape close to the light receiving parts 1a, 1b, 1c,... With respect to the readout gate electrode 3, and the readout gate electrodes 2a, 2b,. The positions relative to 2c,... Are formed uniformly.

  Further, since the light receiving portions 1a, 1b, 1c,... Are arranged in the vertical direction, arsenic or phosphorus ion implantation processing for each charge storage region 13 of the light receiving portions 1a, 1b, 1c,. As shown in FIG. 5A, the injection is performed in the injection direction 34 from the left to the right in the drawing. As a result, the charge storage regions 13 of the light receiving portions 1a, 1b, 1c,... Sink below the read impurity regions 12 below the read gate electrodes 2a, 2b, 2c,. Are uniformly formed in the plurality of pixel portions with respect to the readout gate electrodes 2a, 2b, 2c,.

  Therefore, in the plurality of pixel portions, the positions of the impurity regions 12 of the transfer portion and the charge storage regions 13 of the light receiving portions 1a, 1b, 1c,... Are relative to the read gate electrodes 2a, 2b, 2c,. It is possible to make the readout characteristics uniform. In addition, each charge storage region 13 of the light receiving portions 1a, 1b, 1c,... Is formed so as to be deeply embedded below the readout gate electrodes 2a, 2b, 2c,. Since the impurity region 12 is formed in a form close to the light receiving portions 1a, 1b, 1c,... With respect to the read gate electrodes 2a, 2b, 2c,. The signal charges accumulated in each of the light receiving portions 1a, 1b, 1c,... Can be completely read out, and the occurrence of afterimages can be suppressed. . Further, the respective charge storage regions 13 of the light receiving portions 1a, 1b, 1c,... Are formed so as to be deeper and deeper below the light receiving portions 2a, 2b, 2c,. Therefore, the read voltage can be reduced.

In the second embodiment, as shown in FIG. 5, the structure in which the charge detection unit 3 is shared by the upper and lower pixel units has been described. However, the charge detection unit 3 is shared by three or more light receiving units. Also in this structure, the arrangement direction of the pixel portions is not limited to the vertical direction (or vertical direction), but may be the horizontal direction (or the horizontal direction intersecting the vertical direction) or an oblique direction. The direction of implantation of each impurity region 12 in the transfer unit is a direction formed so as to be closer to each light receiving unit with respect to the read gate electrodes 2a, 2b, 2c, and the injection of each charge storage region 13 in each light receiving unit. As long as the direction of the ion implantation is such that the direction is deeply embedded in each readout gate electrode, any arrangement direction of the pixel portions can be applied.
(Embodiment 3)
In the third embodiment, a CMOS type solid-state imaging device in which a charge detection unit is shared by a four-pixel light receiving unit will be described.

  FIG. 6A is a top view illustrating a configuration example of the solid-state imaging device according to the third embodiment of the present invention, and FIG. 6B is a cross-sectional view taken along the line F-F ′ in FIG.

  6A and 6B, the solid-state imaging device 20B according to the third embodiment includes a plurality of light receiving units 1a to 1d and each of the light receiving units 1a to 1d on the semiconductor substrate 10 every four pixel units. The read gate electrodes 2a to 2d provided on the transfer unit for controlling the reading of each signal charge accumulated in 1d, and the light receiving units 1a to 1d for detecting the read signal charge A charge detection unit 3 is provided. In the solid-state imaging device 20B, a plurality of sets of such light receiving portions 1a to 1d are provided in a two-dimensional manner.

  Each of the light receiving portions 1a to 1d is provided with a charge transfer region 13 made of an N-type impurity region in the P-type diffusion layer 11 on the N-type semiconductor substrate 10 and a P + region 14 on the surface side thereof. ing. The read gate electrodes 2a to 2d are provided on the P-type impurity region 12 via the gate oxide film 16, respectively, and control the read voltage of the transfer unit. Further, the charge detection unit 3 is configured by an N-type impurity region 15.

  In the structure in which the charge detection unit 3 is shared by the light receiving units 1a to 1d (four pixel units in the fourth embodiment) having four or more pixel units, when the pixel units are arranged in a plurality of directions, ions are injected from one injection direction. By implantation, the positions of the impurity regions 12 constituting the transfer part of each pixel part and the charge storage regions 13 constituting the light receiving parts 1a to 1d cannot be formed uniformly.

  Therefore, in the third embodiment, when the impurity regions 12 of the transfer unit and the charge storage regions 13 of the light receiving units 1a to 1d are injected, the charge of the impurity region 12 of the transfer unit and the charge of each light receiving unit in each pixel unit. The substrate is rotated to control the ion implantation direction so that the position of the accumulation region 13 can be uniformly formed with respect to the read gate electrodes 2a to 2d. In this case, (1) a method in which ions are implanted into the light receiving portions 1a and 1b, and ions are implanted into the light receiving portions 1c and 1d after the substrate has been rotated 180 degrees. The ion implantation into the charge storage region 13 of the light receiving unit is performed in the same manner.

  Thus, the positions of the impurity regions 12 of the transfer unit and the charge storage regions 13 of the light receiving units 1a to 1d are uniformly formed with respect to the read gate electrodes 2a to 2d in the plurality of pixel units, and the read characteristics and the like are uniform. Can be.

  As described above, according to the first to third embodiments, when the impurity region 12 of the transfer portion is formed, the position with respect to the read gate electrodes 2a and 2b is constant and is formed closer to the light receiving portions 1a and 1b. Ions such as phosphorus or arsenic are implanted from a direction 31 that has a predetermined inclination angle from the direction perpendicular to the surface portion of the semiconductor substrate 10 and is perpendicular to the arrangement direction of the light receiving portions 1a and 1b. Next, for example, when the charge storage regions 13 of the two light receiving portions 1a and 1b are formed, the positions with respect to the read gate electrodes 2a and 2b are constant, and the deeper portions of the read gate electrodes 2a and 2b are deeply submerged. Ions such as boron are implanted from a direction 32 having a predetermined inclination angle from the direction perpendicular to the surface portion of the semiconductor substrate 10 and perpendicular to the arrangement direction of the light receiving portions 1a and 1b. In this way, by controlling the ion implantation direction, in the solid-state imaging device in which the charge detection unit is shared by the plurality of light receiving units, the read characteristics from each light receiving unit can be made uniform and the read voltage can be further increased. Can be reduced.

Although not particularly described in the first to third embodiments, the present invention is a charge detection unit shared by a plurality of light receiving units from a plurality of light receiving units that photoelectrically convert incident light into signal charges. In addition, in the method of manufacturing the solid-state imaging device that respectively reads the signal charges through the transfer units below the read gate electrodes, the positions of the end surfaces of the impurity region of the transfer unit and the read gate electrode corresponding to the impurity region are There are a plurality of impurity region forming steps in the transfer portion that perform ion implantation from the same ion implantation direction in each readout gate electrode, and a plurality of positions on each end face of the charge accumulation region of the light receiving portion and the readout gate electrode corresponding to this charge accumulation region If there is a charge accumulation region forming step in which ion implantation is performed from the same ion implantation direction in the light receiving portion, the read characteristics from each light receiving portion are made uniform. Together, we can achieve the object of the present invention which can reduce the reading voltage. In this case, the direction perpendicular to the arrangement direction of the plurality of light receiving portions in the impurity region forming step of the transfer portion is opposite to the direction perpendicular to the arrangement direction of the plurality of light receiving portions in the charge accumulation region forming step. It is desirable that the directions are opposite to each other.
Furthermore, although not specifically described in the first to third embodiments, the present invention is configured to detect charges shared by a plurality of light receiving units from a plurality of light receiving units that photoelectrically convert incident light into signal charges. In the method of manufacturing the solid-state imaging device, in which the signal charges are read out through the transfer units under the read gate electrodes, respectively, the end surfaces of the impurity regions of the transfer units and the read gate electrodes corresponding to the impurity regions If there is an impurity region forming step of the transfer portion that performs ion implantation from the ion implantation direction where the position is the same in each readout gate electrode, in the charge storage region forming step, the charge storage region of the light receiving portion and the charge storage region Even if ion implantation processing is performed from the ion implantation direction in which the positional relationship of each end face with the corresponding readout gate electrode does not become the same positional relationship in a plurality of light receiving portions, the conventional technology Compared to, but not enough, while homogenizing the reading characteristics of the respective light receiving portions, object of the present invention which can reduce the reading voltage can be achieved.
Although not specifically described in the first to third embodiments, for example, a digital video camera or a digital still camera using at least one of the solid-state imaging devices 20, 20A, and 20B of the first to third embodiments as an imaging unit. An electronic information device having an image input device such as a digital camera such as the above, an image input camera, a scanner, a facsimile, and a camera-equipped mobile phone device will be described. The electronic information device of the present invention provides a predetermined signal for recording high-quality image data obtained by using at least one of the solid-state imaging devices 20, 20A and 20B of the first to third embodiments of the present invention as an imaging unit. A memory unit such as a recording medium for recording data after processing, a display means such as a liquid crystal display device for displaying the image data on a display screen such as a liquid crystal display screen after processing a predetermined signal for display, and the image data At least one of communication means such as a transmission / reception device that performs communication processing after predetermined signal processing for communication and image output means for printing (printing) and outputting (printing out) the image data. is doing.

  As mentioned above, although this invention has been illustrated using preferable Embodiment 1-3 of this invention, this invention should not be limited and limited to this Embodiment 1-3. It is understood that the scope of the present invention should be construed only by the claims. It is understood that those skilled in the art can implement an equivalent range based on the description of the present invention and the common general technical knowledge from the description of specific preferred embodiments 1 to 3 of the present invention. Patents, patent applications, and documents cited herein should be incorporated by reference in their entirety, as if the contents themselves were specifically described herein. Understood.

  The present invention relates to a solid-state imaging device and a method for manufacturing the same, and an electronic information device using the solid-state imaging device that can make the readout characteristics uniform in each pixel unit when the charge detection unit is shared by a plurality of pixel units. In the field, by controlling the ion implantation direction, the position of the charge storage region constituting each light receiving portion relative to the readout gate electrode can be made constant, and the position of the impurity region constituting the transfer portion relative to the readout gate electrode can be made constant. Therefore, it is possible to make the read characteristics from each light receiving unit uniform.

  In addition, the charge accumulation region of each light receiving part is formed so as to be deeply embedded under the readout gate electrode, and the impurity region of the transfer part is formed so as to be close to the light receiving part side, so that the potential as in the prior art is obtained. The generation of afterimages can be suppressed by completely reading out the accumulated charges without generating any depressions. Further, the read voltage can be reduced by forming the charge accumulation region of the light receiving portion so as to be deeply buried under the read gate electrode.

(A) is a top view which shows the structural example of the solid-state imaging device concerning Embodiment 1 of this invention, (b) is CC 'sectional view taken on the line of (a), (c) is D of (a). -D 'sectional view, (d) is a potential diagram of the CC' line portion of (a) at the time of charge transfer, and (e) is a potential diagram of the DD 'line portion of (a). . (A)-(d) is a top view for demonstrating each process of the manufacturing method of the solid-state imaging device of FIG. (A) is a top view for explaining the formation state of the charge accumulation region of each light receiving unit in the solid-state imaging device of FIG. 1, (b) is a cross-sectional view taken along the line CC ′ of (a), and (c). FIG. 3D is a sectional view taken along line DD ′ in FIG. (A) is a top view for explaining the formation state of the impurity region of the transfer section in FIG. 1, (b) is a cross-sectional view taken along the line CC ′ of (a), and (c) is a cross-sectional view of (a). It is DD 'line sectional drawing. (A) is a top view which shows the structure of the solid-state imaging device concerning Embodiment 2 of this invention, (b) is E-E 'sectional drawing of (a). (A) is a top view which shows the structural example of the solid-state imaging device which concerns on Embodiment 3 of this invention, (b) is F-F 'sectional drawing of (a). (A) is a top view which shows the structural example of the conventional solid-state imaging device, (b) is the sectional view on the AA 'line of (a), (c) is BB' of (a). FIG. 7D is a cross-sectional view of the line, FIG. 7D is a potential diagram of the AA ′ line portion of FIG. 7A during charge transfer, and FIG. 7E is a potential diagram of the BB ′ line portion of FIG. (A)-(d) is a top view for demonstrating each process of the manufacturing method of the solid-state imaging device of FIG. (A) is a top view for explaining the formation state of the charge storage region of the light receiving unit in the solid-state imaging device of FIG. 7, (b) is a cross-sectional view taken along line AA ′ of (a), and (c) is FIG. It is BB 'sectional view taken on the line of (a). (A) is a top view for explaining the formation state of the impurity region of the transfer section in the solid-state imaging device of FIG. 7, (b) is a cross-sectional view taken along line AA ′ of (a), and (c) is It is BB 'sectional view taken on the line of (a).

Explanation of symbols

DESCRIPTION OF SYMBOLS 1a, 1b, 1c, 1d Light-receiving part 2a, 2b, 2c, 2d Read-out gate electrode 3 Charge detection part 4 Reset gate electrode 5 Reset drain part 10 N-type semiconductor substrate 11 P-type diffused layer (P well)
DESCRIPTION OF SYMBOLS 12 P-type impurity area | region of a transfer part 13 Charge storage area | region of a light-receiving part 14 P + area | region of the light-receiving part surface 15 N-type impurity area | region 16 Gate oxide film 20, 20A, 20B Solid-state imaging device 21, 22, 23 Resist pattern 31, 33 Transfer Ion implantation direction when forming impurity region 32, 34 Ion implantation direction when forming charge accumulation region of light receiving portion

Claims (10)

Each signal charge is read out from a plurality of light receiving units that photoelectrically convert incident light into signal charges through a transfer unit under each readout gate electrode to a charge detection unit shared by each of the plurality of light receiving units. In the manufacturing method of the solid-state imaging device,
An impurity region forming step of the transfer unit that performs ion implantation from the ion implantation direction in which the position of each end face of the impurity region of the transfer unit and the read gate electrode corresponding to the impurity region is the same in each read gate electrode ;
After forming the read-out gate electrode via a gate oxide film on the impurity region of the transfer section, the position of each end face of the read gate electrodes corresponding to the charge accumulation region and the charge accumulation region of the light receiving portion is the plurality the have a charge accumulation region forming step of performing ion implantation from ion implantation direction is the same in the light receiving section,
A plurality of light receiving parts in which the charge detection parts are shared are formed in a line on the semiconductor substrate,
The impurity region forming step of the transfer unit has a predetermined inclination angle from the direction perpendicular to the surface of the semiconductor substrate so that each position of the impurity region constituting the transfer unit with respect to the read gate electrode is constant, And ion implantation is performed from a direction perpendicular to the arrangement direction of the plurality of light receiving parts,
The charge accumulation region forming step includes a predetermined inclination angle from a direction perpendicular to the surface of the semiconductor substrate so that each position of the charge accumulation region of each of the light receiving portions constituting the plurality of light receiving portions with respect to the readout gate electrode is constant. And a method of manufacturing a solid-state imaging device that performs ion implantation from a direction perpendicular to the arrangement direction of the plurality of light receiving units . A plurality of light receiving units that can store incident light by converting incident light into signal charges on a semiconductor substrate, each transfer unit for reading each signal charge stored in each of the plurality of light receiving units, and the plurality of light receiving units A read gate electrode provided on each transfer unit to control reading of each signal charge stored in each unit, and each signal charge read through each transfer unit, respectively. In a method of manufacturing a solid-state imaging device having a charge detection unit provided in common for each light receiving unit of a plurality of pixel units,
Impurity region formation of the transfer unit for forming the impurity region of each transfer unit by setting the ion implantation direction so that each position of the impurity region of each transfer unit with respect to the read gate electrode is constant. Process,
After the readout gate electrode is formed on the impurity region of the transfer portion via the gate oxide film , the ion implantation direction is set so that the positions of the charge storage regions of the light receiving portions with respect to the readout gate electrode are constant. by ion implantation process it has a charge accumulation region forming step of forming respectively a charge accumulation region of the light receiving elements Te,
A plurality of light receiving parts in which the charge detection parts are shared are formed in a line on the semiconductor substrate,
The impurity region forming step of the transfer unit has a predetermined inclination angle from the direction perpendicular to the surface of the semiconductor substrate so that each position of the impurity region constituting the transfer unit with respect to the read gate electrode is constant, And ion implantation is performed from a direction perpendicular to the arrangement direction of the plurality of light receiving parts,
The charge accumulation region forming step includes a predetermined inclination angle from a direction perpendicular to the surface of the semiconductor substrate so that each position of the charge accumulation region of each of the light receiving portions constituting the plurality of light receiving portions with respect to the readout gate electrode is constant. And a method of manufacturing a solid-state imaging device that performs ion implantation from a direction perpendicular to the arrangement direction of the plurality of light receiving units . 3. The method of manufacturing a solid-state imaging device according to claim 1, wherein the plurality of light receiving units sharing the charge detection unit are arranged in a vertical direction, a horizontal direction, or an oblique direction on the semiconductor substrate. Wherein the plurality of light receiving portions charge detection section is shared are formed are arranged in a plurality of directions on the semiconductor substrate,
The impurity region forming step of the transfer unit has a predetermined inclination angle from a direction perpendicular to the surface of the semiconductor substrate so that each position of the impurity region constituting each transfer unit with respect to the read gate electrode is constant, and, after the ion implantation from a direction perpendicular to the array direction of the light receiving portions of the plurality of, ion implantation is performed relative ion implantation direction with respect to the semiconductor substrate to change 180 degrees,
The charge storage region forming step has a predetermined inclination angle from a direction perpendicular to the surface of the semiconductor substrate so that each position of the charge storage region constituting the plurality of light receiving portions with respect to the readout gate electrode is constant, and, according to claim 2 carried out after the ion implantation from a direction perpendicular to the predetermined arrangement direction of the light receiving portions of the plurality of the relative ion implantation direction change 180 degrees ion implantation to said semiconductor substrate Or a method for manufacturing the solid-state imaging device according to 3. 5. The method of manufacturing a solid-state imaging device according to claim 4 , wherein the plurality of light receiving units sharing the charge detection unit are arranged in a vertical direction and a horizontal direction on the semiconductor substrate. The impurity region forming step of the transfer unit includes ions in a direction from the side opposite to the light receiving unit with respect to the read gate electrode so that the impurity region of the transfer unit is formed adjacent to the light receiving unit side. The manufacturing method of the solid-state imaging device according to claim 1 or 2 , wherein injection is performed. In the charge storage region forming step, the charge storage region is formed in a direction from the light receiving unit side with respect to the read gate electrode so that the charge storage region is formed under the impurity region of the transfer unit below the read gate electrode. The manufacturing method of the solid-state imaging device according to claim 1 or 2 , wherein ion implantation is performed. Claim 1, wherein the phosphorus or arsenic is ion-implanted into the P-type diffusion layer on the N-type semiconductor substrate to form a charge accumulation region of the light receiving portion, the boron ions are implanted to form the impurity region of the transfer section Or the manufacturing method of the solid-state imaging device of 2 . 3. The manufacturing of the solid-state imaging device according to claim 1, wherein the vertical direction in the impurity region forming step of the transfer unit and the vertical direction in the charge storage region forming step are directions opposite to each other. Method. Wherein the change of the ion implantation direction in the transfer portion of the impurity region forming step, wherein the said ion implantation direction changes in the charge accumulation region forming step, according to claim 4, carried out by rotating the semiconductor substrate or the ion implantation direction Manufacturing method of solid-state imaging device.

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