JP4480458B2 - Open air chemical vapor deposition system - Google Patents

Description

  The present invention relates to an atmospheric open type chemical vapor deposition apparatus.

  An atmospheric open type chemical vapor deposition apparatus (CVD apparatus) forms a film by spraying a material gas consisting of a film forming material vaporized in a film forming chamber and a carrier gas onto a substrate heated in the open air. Is to do.

  For example, as disclosed in Japanese Patent Application Laid-Open No. 2001-254180 (Patent Document 1), the material gas is sprayed from both sides of a heated base material as the atmospheric open type CVD apparatus. There is a configuration that allows film formation on both sides simultaneously.

JP 2001-254180 A

  By the way, in the CVD apparatus configured as described above, it is possible to perform film formation on both surfaces of the base material at the same time and to save time and effort, as compared to the case where the base material is replaced and the film is formed on each side. However, the carrier gas (material gas) is heated to a temperature at which the film forming material does not undergo an oxidation reaction, for example, about 350 degrees, whereas the substrate has a temperature at which the film forming material undergoes an oxidation reaction, for example, 600 degrees. It is heated to the extent.

  When material gas is sprayed from both sides to a thin base material with a large temperature difference between the material gas and the base material, the temperature of the base material heated to the appropriate oxidation reaction temperature is noticeable, making it inappropriate for the oxidation reaction. As a result, there is a problem that the film quality and the film formation speed are lowered, and the film formation on both sides simultaneously causes the production efficiency to decrease.

  The present invention solves the above-mentioned problems, and with a simple configuration, an oxide film is continuously formed on each side while heating the non-deposition surface of the substrate conveyed by the conveying means. Oxide deposited on the base material can be deposited sequentially on both sides of the base material while maintaining the appropriate reaction temperature near the reaction temperature without lowering the base material temperature when the material gas is blown An object of the present invention is to provide an innovative open-air chemical vapor deposition apparatus that is extremely practical and capable of improving production efficiency by improving film quality and film formation speed.

  The gist of the present invention will be described with reference to the accompanying drawings.

A material gas composed of a vaporized film forming material and a carrier gas is sprayed onto the substrate 1 heated by the material spraying means 10 under the atmosphere to form an oxide film on both surfaces of the substrate 1. 1 is a first chemical vapor deposition apparatus in which a material film is sprayed on one surface of a substrate 1 to form an oxide film, and the material gas is sprayed on the opposite surface of the substrate 1 A second film forming chamber 3 for forming an oxide film, and when forming an oxide film on one surface of the substrate 1 in the first film forming chamber 2 or the second film forming chamber 3, the heating means 4 for heating the surface opposite, provided in the bi-direction of the Kazunari Makushitsu 2 and the second film forming chamber 3, the first Kazunari Makushitsu 2, the material gas to the one surface of the substrate 1 The opposite surface can be heated by the heating means 4 while spraying the second film forming chamber 3, While blowing the material gas on the other side of the one surface of the oxide film is formed in the film forming chamber 2, constitutes the surface of the opposite side so as to heat by the heating means 4, the first film Conveying means 5 capable of sequentially transporting the base material 1 to the chamber 2 and the second film forming chamber 3 is provided, and an oxide film can be sequentially formed on both surfaces of the base material 1 by transport by the transport means 5. The present invention relates to an atmospheric open type chemical vapor deposition apparatus.

Further, a material spraying means 10 capable of spraying the material gas onto substantially the entire surface of one side of the substrate 1 and a heating means 4 capable of heating the substantially entire surface opposite to the first film forming chamber 2. And a material spraying means 10 capable of spraying the material gas onto the second film forming chamber 3 over substantially the entire surface opposite to the one surface on which the oxide film is formed in the first film forming chamber 2 of the substrate 1. And a heating means 4 capable of heating substantially the entire surface on the opposite side, according to the atmosphere open type chemical vapor deposition apparatus according to claim 1 .

Further, the first film forming chamber 2 has the material spraying means 10 and the heating means so that the opposite surface can be heated while spraying the material gas on one surface of the base material 1 held in a vertical shape. 4 and the second film forming chamber 3 is formed of the material gas on the opposite surface of the first film forming chamber 2 of the base material 1 held in a vertical shape to the one surface on which an oxide film is formed. The open air chemistry according to any one of claims 1 and 2 , wherein the material spraying means (10) and the heating means (4) are configured so that the opposite surface can be heated while spraying. This relates to a vapor deposition apparatus.

Further, the conveying means 5, claim 3, characterized by being configured so as sequentially transported to the substrate 1 the while maintaining a vertical first Kazunari Makushitsu 2 and the second film forming chamber 3 those of the open-air chemical vapor deposition apparatus of the serial placement.

In addition, the heating means 4 is configured to be heated at a higher temperature toward the lower side of the base material 1 so as to be able to heat substantially the entire surface of the base material 1 to a substantially uniform temperature. The open air chemical vapor deposition apparatus according to any one of claims 3 and 4 .

Further, in any one of claims 3-5, characterized in that the base material 1 to be conveyed to the first Kazunari Makushitsu 2 or secondary film forming chamber 3 with a preheating chamber 6 to preheat This relates to the described open-air chemical vapor deposition apparatus.

7. The open air chemical vapor deposition apparatus according to claim 6 , wherein the preheating chamber 6 is provided with preheating means 7 for heating the substrate 1 from both sides.

Further, the preheating chamber 6, the first film forming chamber 2 and the second film forming chamber 3 are arranged adjacent to or close to each other in one direction, and the substrate 1 is transferred to the chambers by the transfer by the transfer means 5. The apparatus according to any one of claims 6 and 7 , wherein the chemical vapor deposition apparatus is continuously processed in the atmosphere.

Further, the substrate 1 transported by the transport means 5 or the transport slit section 25 through which the transport means 5 can pass, respectively, at the bottoms of the preheating chamber 6, the first film forming chamber 2 and the second film forming chamber 3. The apparatus according to any one of claims 6 to 8 , wherein the chemical vapor deposition apparatus is open to the atmosphere.

The preheating chamber 6, the first film forming chamber 2, and the second film forming chamber 3 are provided in a continuous state via a partition valve portion 9 that partitions these chambers . 9. The open air chemical vapor deposition apparatus according to any one of 9 above.

Moreover, the Second deposition chamber continuously provided state 3, in any one of claims 1 to 10, characterized in that a cooling chamber 8 that the cooling means is provided for cooling the substrate 1 This relates to the described open-air chemical vapor deposition apparatus.

Further, when the substrate 1 is formed in the first film formation chamber 2 and the second film formation chamber 3, the transfer means 5 is configured so that an oxide film can be formed in a stopped state or a transfer state. those of the open-air chemical vapor deposition apparatus according to any one of claims 1 to 11, wherein.

  Since the present invention is configured as described above, the film is sequentially formed on both surfaces of the substrate while maintaining the appropriate reaction temperature in the vicinity of the reaction temperature without lowering the temperature of the substrate when the material gas is sprayed with a simple structure. It is possible to improve the production efficiency by improving the film quality and deposition rate of the oxide film formed on the base material. It becomes a vapor deposition apparatus.

In the invention of claim 2 Symbol placement, becomes was Xiu the more practical that the invention may be more readily achieved.

In the inventions according to claims 3 and 4 , even if the substrate has a large area, the oxide film can be satisfactorily formed, and the practicality is further improved.

In the inventions according to claims 5 to 7 , the substrate can be heated more satisfactorily, and the oxide film can be more excellent in practicality than that in which a good oxide film can be formed in a short time.

In the inventions according to claims 8 and 9 , the film can be formed more efficiently, and the apparatus can be made more compact, so that it is more practical.

In the invention according to claim 10 , the cooling time can be shortened and the deformation that occurs when the base material is taken out can be prevented.

In the invention described in claim 11 , the thermal insulation and air tightness of each chamber is improved, and the film can be formed more efficiently, and is more practical.

In the invention described in claim 12 , the film can be formed under more appropriate conditions, and is more practical.

  Embodiments of the present invention that are considered suitable (how to carry out the invention) will be briefly described with reference to the drawings, illustrating the operation of the present invention.

  When the material gas is blown onto the base material 1 to form an oxide film on both surfaces of the base material 1, the base material 1 is sequentially transported to the first film forming chamber 2 and the second film forming chamber 3 by the transport means 5, An oxide film is formed by spraying a material gas on one side in the first film formation chamber 2, and an oxide film is formed by spraying a material gas on the opposite side of the one surface on which the oxide film is formed in the second film formation chamber. As a result, an oxide film is sequentially formed on both surfaces of the substrate 1.

  That is, compared with the case where film formation is performed on both surfaces simultaneously by spraying a material gas on each side of the substrate 1 in each of the first film formation chamber 2 and the second film formation chamber 3 to form an oxide film. The temperature drop of the base material 1 (about 600 degrees) due to the sprayed material gas (about 300 degrees) can be suppressed.

  In addition, while the material gas is sprayed on one surface, the opposite surface is heated by the heating means 4 to form the film while maintaining the temperature of the substrate 1 at an appropriate temperature close to the reaction temperature of the material gas. Is possible.

  That is, for example, in the first film formation chamber 2, while the material gas is blown on one side, the opposite surface is heated by the heating means 4 to form an oxide film. While blowing the material gas to the opposite surface of the one surface on which the oxide film is formed, the opposite surface is heated by the heating means 4 to form an oxide film. By forming the oxide film, the temperature decrease of the base material 1 is further suppressed, and the temperature at which the film forming material contained in the material gas is satisfactorily formed on the base material 1 is maintained. A film can be formed.

  Therefore, since the film forming material can be oxidized at a more appropriate temperature, the film quality and the film forming speed of the oxide film can be improved, and the production efficiency can be improved.

  Further, the first film forming chamber 2 and the second film forming chamber 3 are configured such that the material spraying means 10 is provided on one side of the base material 1 and the heating means 4 is provided on the opposite surface. In addition, the first film formation chamber 2 and the second film formation chamber 3 can have substantially the same structure (only the positions of the material spraying means 10 and the heating means 4 are different). Since it can be adopted, it can be manufactured easily and at a low cost.

  In addition, since the film can be successively formed on both surfaces of the substrate 1 by being sequentially transferred to the first film forming chamber 2 and the second film forming chamber 3 by the transfer means 5, the structure in which the film is formed on each side. However, troublesome replacement work is not required, and the substrate 1 can be easily carried in and out. From this point, the production efficiency can be improved.

  Further, when the film is formed on only one surface of the base material 1 and taken out, the base material 1 is distorted and deformed by the internal stress of the formed oxide film, and the oxide film is cracked or peeled off. Although the quality may be lowered, according to the present invention, for example, the first film formation chamber 2 and the second film formation chamber 3 are disposed adjacent to or close to each other in one direction. By allowing continuous film formation in the second film formation chamber 3, film formation can be performed on each side without causing the above-described problems.

  Therefore, the oxide film can be formed on both surfaces of the substrate 1 very efficiently, and the film quality of the oxide film can be improved, and the quality and productivity can be improved. it can.

  Further, for example, a material spraying means 10 capable of spraying the material gas onto substantially the entire surface of one side of the base material 1 in the first film forming chamber 2 and a heating means 4 capable of heating the substantially entire surface on the opposite side. And spraying the material gas onto the second film forming chamber 3 over substantially the entire opposite surface of the first film forming chamber 2 of the substrate 1 opposite to the surface on which the oxide film is formed. In the case where the means 10 and the heating means 4 capable of heating the substantially entire surface on the opposite side are provided, a uniform oxide film can be efficiently formed on the substantially entire surface of the substrate 1.

  In addition, for example, the first film forming chamber 2 can be heated with the material spraying means 10 so as to heat the opposite surface while spraying the material gas on one surface of the base material 1 held in a vertical shape. The second film forming chamber 3 is formed on the opposite surface of the first film forming chamber 2 of the base material 1 held in a vertical shape on the opposite side of the one surface on which the oxide film is formed. When the material spraying means 10 and the heating means 4 are configured so that the opposite surface can be heated while spraying the material gas, even the base material 1 having a large area can be formed efficiently. It will be.

  Further, for example, when the heating means 4 is configured to be heated at a higher temperature toward the lower side of the base material 1, and configured to be able to heat substantially the entire surface of the base material 1 to a substantially uniform temperature. Can suppress the temperature change of the substrate 1 due to the rising air flow generated in the atmospheric open type chemical vapor deposition apparatus.

  Further, for example, when a preheating chamber 6 for preheating the substrate 1 conveyed to the first film forming chamber 2 or the second film forming chamber 3 is provided, the first film forming chamber 2 or the second film forming chamber 2 is provided. The heating time in the film chamber 3 can be shortened to form a film in a short time.

  Further, for example, the preheating chamber 6, the first film forming chamber 2 and the second film forming chamber 3 are arranged adjacent to or in close proximity to one direction, and the substrate 1 is moved by the transfer by the transfer means 5. In the case where each chamber is continuously processed, film formation can be performed more efficiently and the apparatus can be made compact.

  Further, for example, the substrate 1 transported by the transport unit 5 or the transport slit through which the transport unit 5 can pass at the bottoms of the preheating chamber 6, the first film forming chamber 2 and the second film forming chamber 3, respectively. When the section 25 is provided, the transfer means 5 can be installed without taking up installation space by providing the transfer means 5 below each chamber.

  For example, when the cooling chamber 8 provided with the cooling means for cooling the base material 1 is provided in the state continuously provided in the second film forming chamber 3, the cooling time for taking out the base material 1 is set. In addition to shortening, it is possible to prevent deformation of the base material 1 due to a rapid temperature change, and cracks and separation occurring in the oxide film.

  Further, for example, when the substrate 1 is formed in the first film formation chamber 2 and the second film formation chamber 3, the transfer means 5 is configured so that an oxide film can be formed in a stopped state or a transfer state. In this case, the oxide film can be formed under more appropriate film formation conditions.

  Therefore, according to the present invention, when the material gas is sprayed with a simple configuration, the film can be sequentially formed on both surfaces of the substrate while maintaining the appropriate reaction temperature in the vicinity of the reaction temperature without reducing the temperature of the substrate. A revolutionary open-air chemical vapor deposition apparatus that is extremely practical and capable of improving the production efficiency by improving the film quality and deposition rate of the oxide film formed on the substrate; Become.

  Specific embodiments of the present invention will be described with reference to the drawings.

  In this embodiment, a material gas composed of a vaporized film forming material and a carrier gas is sprayed onto the base material 1 heated in the atmosphere by the material spraying means 10 to form oxide films on both surfaces of the base material 1. An atmospheric open type chemical vapor deposition apparatus for forming a film, in which a material film is blown onto one surface of a base material 1 to form an oxide film, and on the opposite surface of the base material 1 And a second film formation chamber 3 for forming an oxide film by blowing the material gas. In the first film formation chamber 2 or the second film formation chamber 3, an oxide film is formed on one surface of the substrate 1. When the film is formed, heating means 4 for heating the opposite surface is provided in the first film forming chamber 2 and the second film forming chamber 3, respectively. A transport means 5 capable of transporting the material 1 sequentially is provided, and an oxide film can be sequentially formed on both surfaces of the substrate 1 by transport by the transport means 5. It is those that you configured.

  Specifically, a material spraying means that can spray the material gas onto substantially the entire surface of one side of the substrate 1 and a heating means 4 that can heat the substantially entire surface on the opposite side. And spraying the material gas onto the second film forming chamber 3 over substantially the entire opposite surface of the first film forming chamber 2 of the substrate 1 opposite to the surface on which the oxide film is formed. And heating means 4 capable of heating substantially the entire surface on the opposite side.

  Accordingly, it is possible to efficiently form a uniform oxide film while heating substantially the entire surface of one side of the substrate 1 in the first film formation chamber 2 or the second film formation chamber 3.

  The first film forming chamber 2 has the material spraying means and the heating means 4 so that the opposite surface can be heated while spraying the material gas on one surface of the substrate 1 held in a vertical shape. The second film formation chamber 3 is configured to apply the material gas to the opposite surface of the first film formation chamber 2 of the base material 1 held in a vertical shape on the opposite side of the surface on which the oxide film is formed. The material spraying means and the heating means 4 are configured so that the opposite surface can be heated while spraying.

  Further, the transfer means 5 is configured so that the substrate 1 can be sequentially transferred to the first film formation chamber 2 and the second film formation chamber 3 while being held vertically.

  Accordingly, when the base material 1 is held in a horizontal shape when it is large, it tends to bend due to its own weight and cannot be properly formed. The film can be satisfactorily formed without bending, and the structure is simple and is extremely suitable for the film formation of the substrate 1 having a large area.

  Further, by forming the film on the substrate 1 held in a vertical shape, the first film formation chamber 2 and the second film formation chamber 3 are also vertical and can be installed in a smaller installation space. Compactness can also be achieved.

  However, in particular, when the large-area base material 1 is held vertically, high temperature gas is blown in the film forming chamber, so that an upward air flow is likely to occur, and the surface temperature of the base material 1 is lowered to the lower side and the upper side. In this embodiment, instead of heating the entire surface of one side of the substrate 1 at the same temperature, the heating means 4 is configured to heat the lower side of the substrate 1 at a higher temperature. Thus, the entire surface of the substrate 1 can be heated to a substantially uniform temperature.

  In the present embodiment, as described above, each process is performed while the base material 1 is held in the vertical type, but each process may be performed while being held in the horizontal type. .

  In the first film forming chamber 2 of this embodiment, a preheating chamber 6 for preheating the substrate 1 conveyed to the first film forming chamber 2 is provided in a continuous state. Specifically, the preheating chamber 6 is provided with preheating means 7 (for example, a heater in which a heater wire is embedded in ceramic) for heating the substrate 1 from both sides.

  Accordingly, the heating time in the film forming chamber can be shortened to form the film more efficiently, and the base material 1 is not easily deformed such as warping during the film forming.

  The preheating chamber 6 of the present embodiment has a configuration in which preheating means 7 for heating from both sides of the substrate 1 is provided, but a configuration in which preheating means 7 for heating one side may be provided. Further, in this embodiment, the case where one preheating chamber 6 is provided is described. However, a plurality of preheating chambers 6 are connected in series, and the heating temperature is gradually increased for each preheating chamber 6 along the transport direction. The substrate 1 may be heated stepwise, or the heating temperature may be set to the same temperature so that the heating time can be shortened.

  In this embodiment, the preheating chamber 6, the first film formation chamber 2, and the second film formation chamber 3 are arranged in a continuous manner in one direction, and the substrate 1 is transported by the transport means 5. Are continuously processed in each chamber. Specifically, the transport unit 5 is configured to transport the base material 1 in a predetermined direction, and the chambers are arranged side by side on the transport line of the transport unit 5.

  Accordingly, the preheated base material 1 can be continuously processed in the first film formation chamber 2 and the second film formation chamber 3 while the temperature decrease is prevented as much as possible, so that the film can be formed efficiently. Thus, the apparatus can be made compact.

  In the present embodiment, the base material 1 transported by the transport means 5 or the transport means 5 passes through the bottoms of the preheating chamber 6, the first film forming chamber 2 and the second film forming chamber 3, respectively. The conveyance slit part 25 which can do is provided. Therefore, it is not the structure which arrange | positions each said chamber and the conveyance means side by side, but the structure which provides the said conveyance means 5 below each chamber, and it can achieve size reduction also from this point.

  In this embodiment, the conveying means 5 is provided below each chamber, but the conveying means 5 may be provided in parallel with each chamber.

  Further, the preheating chamber 6, the first film forming chamber 2 and the second film forming chamber 3 are provided in a continuous state via a partition valve portion 9 which partitions these chambers. Therefore, the heat insulation of each chamber heated or cooled by the gate valve portion 9 is further improved, and the film formation that is easily influenced by the temperature distribution can be further improved.

  In addition, a cooling chamber 8 provided with cooling means for cooling the substrate 1 is provided in a state of being connected to the second film forming chamber 3.

  Specifically, as the cooling means, a heater is used for cooling while gradually lowering the heating temperature to such an extent that the base material 1 is not cracked. If it is desired to shorten the cooling time, a cooling plate that is water-cooled may be provided in the cooling chamber 8, or the base material 1 may be cooled by blowing an inert gas or air. good. Further, a plurality of cooling chambers 8 may be provided continuously. Therefore, not only the cooling time can be shortened, but also deformation of the base material 1 accompanying rapid cooling can be prevented.

  Further, when the substrate 1 is formed in the first film formation chamber 2 and the second film formation chamber 3, the transfer means 5 is configured so that an oxide film can be formed in a stopped state or a transfer state. Yes. Therefore, a favorable oxide film can be formed by changing the film formation conditions more flexibly.

  Each part will be specifically described.

  The transport means 5 includes a rack 12 extending along the one direction in which the respective chambers are provided below each chamber, and a pinion 13 that engages with the rack 12, and moves along the rack 12. A self-propelled conveyance device is adopted which comprises a base carrier 17 and is provided with a base material holding part 20 for holding the base material 1 on the base carrier 17.

  Specifically, the rack 12 and the guide rail 22 are juxtaposed on the base plate 16 via the fixing plate 21, and the slide that slides on the rack 12 and the guide rail 22 on the lower surface of the plate-like base carrier 17 is provided. A moving body 15 is attached, and a servo motor 14 for driving a pinion 13 that meshes with the rack 12 is provided on the upper surface of the base carrier 17, and the base carrier 17 is driven in a direction corresponding to the rotation direction of the pinion 13 by driving the servo motor 14. A support 18 having the base material holding part 20 is provided on the base carrier 17 and the base material 1 held by the base material holding part 20 is configured to move along the rack 12 and the guide rail 22. It is configured so that it can be transported.

  Therefore, since the transport device can be made compact, the size of the device can be reduced accordingly.

  In addition, since the drive unit of the transfer device is provided outside the film forming chamber, the drive unit can be operated at room temperature, and the durability and reliability of the drive unit can be improved. Accordingly, in the present embodiment, the base carrier 17 is moved by the rack and pinion mechanism, but other mechanisms such as a ball screw mechanism and a belt mechanism may be adopted as the driving system.

  The preheating chamber 6, the first film forming chamber 2, the second film forming chamber 3, and the cooling chamber 8 are provided with the above-described transfer slit portion 25 at the bottom.

  Specifically, the transfer slit portion 25 includes an opening portion 26 provided at the lower portion of each chamber and a seal portion 19 (made of silicon rubber) that closes the opening portion 26. The seal unit 19 is configured to transport the base material holding unit 20 in a sealed state. When the base material 1 is transported by the transport device, the seal unit 19 is moved by the base material holding unit 20 of the transport device. The base material 1 can be transported while being spread left and right.

  Accordingly, the airtightness of the chambers is maintained as much as possible during transportation, and thus heat radiation can be prevented, and an oxide film having a uniform film quality can be formed more efficiently.

  In addition, an exhaust unit for exhausting the material gas is provided above the first film formation chamber 2 and the second film formation chamber 3. Specifically, the exhaust section includes a discharge port 11 and a damper 23 provided in the discharge port 11, and the damper 23 can be set to have an opening area in which ascending airflow due to the material gas hardly occurs as much as possible. ing.

  Further, in the first film forming chamber 2 and the second film forming chamber 3, there are a nozzle body that is the material spraying means 10 and a heater that is a heating means 4 in which a heater wire is embedded in a known ceramic. The base material 1 provided in an opposing state and held vertically between the nozzle body and the heater is configured to be conveyed.

A plurality of the nozzle bodies are provided in a juxtaposed manner so that a film can be formed simultaneously on substantially the entire surface of one side of the substrate 1 held in a vertical shape. Specifically, in the present embodiment, three are arranged in the vertical direction.
Accordingly, since film formation can be performed on substantially the entire surface of one side at the same time, the film formation rate is increased so that film formation can be performed in a short time, and an oxide film can be formed on both surfaces of the substrate 1 efficiently.

  The nozzle body is configured such that the vaporized film forming material is conveyed by a carrier gas (nitrogen) and introduced into each film forming chamber by a known carrier gas and film forming material gas supply system 24. ing.

  By the way, in this embodiment, film formation is performed by spraying the material gas heated to about 350 degrees onto the vertical base material 1 heated to about 600 degrees. Since the temperature of the upper part of 1 tends to rise and is vertically long, a temperature distribution is generated in the vertical direction.

  Therefore, in this embodiment, the heating means 4 is divided into at least two or more in the height direction of the base material 1 held by the transport means 5, and the divided heating means 4 are independently provided. It is configured so that heating can be controlled.

  Specifically, the heating means 4 is divided into three parts in the vertical direction of the substrate 1, and the divided heating means 4 can be independently controlled to be heated. More specifically, the configuration is such that three heaters are arranged in the vertical direction.

  Therefore, when the film is formed on the vertical base material 1, a temperature distribution may be generated in the vertical direction of the base material 1 due to the rising airflow as described above. In this embodiment, each part of the base material 1 is formed. Therefore, the temperature of the base material 1 can be kept uniform, and the film can be formed satisfactorily.

  In the present embodiment, the heating means 4 is divided into three parts in the vertical direction of the substrate 1, but other structures such as two parts may be used.

  Further, the peripheral wall portion of each chamber described above is formed of a heat insulating material, and also from this point, heat dissipation from the film forming chamber or the like is prevented as much as possible.

  Moreover, as the partition valve part 9 which partitions each chamber, the well-known valve which can be opened and closed automatically is employ | adopted. This gate valve part 9 does not need to seal each chamber, and may be any configuration that can insulate.

  Further, in the preheating chamber 6 of the present embodiment, a carry-in chamber 27 for carrying in the base material is connected to the preheating chamber 6, and a carry-out chamber 28 for carrying out the base material is connected to the cooling chamber 8. Therefore, in this embodiment, the base material 1 carried in from the carry-in chamber 27 is preheated in the preheating chamber 6, and the first film forming chamber 2 and the second film forming chamber 3 are successively applied to both surfaces of the base material 1. An oxide film is formed, and the base material 1 on which the oxide film is formed on both sides is cooled in the cooling chamber 8 and is carried out from the carry-out chamber 28. From the preheating chamber 6 and the cooling chamber 8, Therefore, film formation can be performed more efficiently by preventing heat dissipation.

  Since the present embodiment is configured as described above, when the material gas is blown onto the base material 1 to form an oxide film on both surfaces of the base material 1, the base material 1 is transferred to the first film formation chamber 2 by the transport means 5. The first film forming chamber 3 is sequentially transferred, and a material gas is blown on one side in the first film forming chamber 2 to form an oxide film, and the one surface on which the oxide film is formed in the second film forming chamber 2 An oxide film is formed on both surfaces of the base material 1 by spraying a material gas on the opposite surface to form an oxide film.

  In other words, the oxide film is formed by spraying the material gas on each side of the substrate 1 in the first film formation chamber 2 and the second film formation chamber 3 as compared with the case where film formation is performed simultaneously on both surfaces. , The temperature drop of the substrate 1 (about 600 degrees) due to the sprayed material gas (about 300 degrees) can be suppressed.

  In addition, while the material gas is sprayed on one surface, the opposite surface is heated by the heating means 4 to form the film while maintaining the temperature of the substrate 1 at an appropriate temperature close to the reaction temperature of the material gas. Is possible.

  That is, in the first film forming chamber 2, an oxide film is formed by heating the opposite surface with a heating means 4 while blowing a material gas on one surface, and in the second film forming chamber 3, the oxidation film is formed. While the material gas is blown on the opposite surface of the one surface on which the material film is formed, the opposite surface is heated by the heating means 4 to form an oxide film, and the oxide film is formed on both surfaces of the substrate 1. By forming the film, the temperature drop of the base material 1 is further suppressed, and the film is formed while maintaining the temperature at which the film forming material contained in the material gas is satisfactorily formed on the base material 1. Will be able to.

  Therefore, since the film forming material can be oxidized at a more appropriate temperature, the film quality and the film forming speed of the oxide film can be improved, and the production efficiency can be improved.

  Further, the first film forming chamber 2 and the second film forming chamber 3 are configured such that the material spraying means 10 is provided on one side of the base material 1 and the heating means 4 is provided on the opposite surface. The first film forming chamber 2 and the second film forming chamber 3 have substantially the same structure (only the positions of the material spraying means 10 and the heating means 4 are different). Therefore, it can be manufactured easily and at a low cost.

  In addition, since the film can be successively formed on both surfaces of the substrate 1 by being sequentially transferred to the first film forming chamber 2 and the second film forming chamber 3 by the transfer means 5, the structure in which the film is formed on each side. However, troublesome replacement work is not required, and the substrate 1 can be easily carried in and out. From this point, the production efficiency can be improved.

  Further, when the film is formed on only one surface of the base material 1 and taken out, the base material 1 is distorted and deformed by the internal stress of the formed oxide film, and the oxide film is cracked or peeled off. Although the quality may be deteriorated, according to the present embodiment, the first film formation chamber 2 and the second film formation chamber 3 are arranged in a continuous state in one direction, Since film formation can be performed continuously in the two film formation chambers 3, film formation can be performed on each side without causing the above-described problems.

  Therefore, the oxide film can be formed on both surfaces of the substrate 1 very efficiently, and the film quality of the oxide film can be improved, and the quality and productivity can be improved. it can.

  In addition, since the first film forming chamber 2 and the second film forming chamber 3 having a simple configuration can form a film on both surfaces of the base material, the manufacturing cost can be reduced accordingly.

  Therefore, in this example, when the material gas is sprayed with a simple configuration, the film is sequentially formed on both surfaces of the substrate while maintaining the appropriate reaction temperature in the vicinity of the reaction temperature without reducing the temperature of the substrate. A revolutionary open-air chemical vapor deposition system with excellent practicality that can improve the production efficiency by improving the film quality and deposition rate of the oxide film formed on the substrate. It becomes.

  The present invention is not limited to this embodiment, and the specific configuration of each component can be designed as appropriate.

It is a structure schematic explanatory drawing of a present Example. It is a schematic explanatory sectional drawing of the film-forming chamber of a present Example. It is a schematic explanatory perspective view of the conveyance means of a present Example.

DESCRIPTION OF SYMBOLS 1 Base material 2 1st film-forming chamber 3 2nd film-forming chamber 4 Heating means 5 Conveyance means 6 Preheating chamber 7 Preheating means 8 Cooling chamber 9 Gate valve part
10 Material spraying means
25 Transport slit

Claims (12)

An atmospheric open type chemical gas is formed by spraying a vaporized material gas comprising a film forming material and a carrier gas onto a substrate heated by the material spraying means in the open atmosphere to form an oxide film on both surfaces of the substrate. A phase deposition apparatus, in which a material film is sprayed on one side of a substrate to form an oxide film, and a material gas is sprayed on the opposite side of the substrate to form an oxide film. And a heating means for heating the opposite surface when forming an oxide film on one surface of the substrate in the first film formation chamber or the second film formation chamber. , provided bi towards the first Kazunari Makushitsu and second film forming chamber, the first Kazunari Makushitsu while spraying the material gas to the one surface of the substrate, heating the surface of the opposite side by said heating means In the second film forming chamber, an oxide film is formed in the first film forming chamber of the base material. While blowing the material gas on the opposite side of the serial one side, the opposite side surface configured to be heated by the heating means, sequentially transported to the substrate in the first film-chamber and the second film forming chamber An atmospheric open type chemical vapor deposition apparatus characterized in that it is provided with a transporting means to obtain and an oxide film can be sequentially formed on both surfaces of the substrate by transporting by this transporting means. The first film forming chamber is provided with a material spraying means capable of spraying the material gas on substantially the entire surface of one side of the substrate, and a heating means capable of heating the substantially entire surface on the opposite side. A material spraying means capable of spraying the material gas on substantially the entire opposite surface of one surface on which the oxide film is formed in the first film forming chamber of the substrate, and a substantially entire surface on the opposite surface air release chemical vapor deposition apparatus according to claim 1, characterized in that a heating means capable of heating the. The first film forming chamber comprises the material spraying means and the heating means so as to heat the opposite surface while spraying the material gas on one side of the base material held in a vertical shape, The second film formation chamber is a surface on the opposite side while blowing the material gas to the opposite surface of the one surface on which the oxide film is formed in the first film formation chamber of the substrate held in a vertical shape. The open air chemical vapor deposition apparatus according to any one of claims 1 and 2 , wherein the material spraying means and the heating means are configured so as to heat the material. Said conveying means, open-air according to claim 3 Symbol mounting, characterized by being configured so that it can sequentially transported to the first film chamber and the second film forming chamber while maintaining said substrate in a vertical Chemical vapor deposition equipment. The heating means is configured to heat at a higher temperature toward the lower side of the base material, and configured to heat substantially the entire surface of the base material to a substantially uniform temperature . 5. The atmospheric open type chemical vapor deposition apparatus according to any one of 4 above. The open air chemistry according to any one of claims 3 to 5 , further comprising a preheating chamber for preheating the base material conveyed to the first film forming chamber or the second film forming chamber. Vapor deposition equipment. 7. The atmospheric open chemical vapor deposition apparatus according to claim 6, wherein preheating means for heating the substrate from both sides is provided in the preheating chamber. The preheating chamber, the first film forming chamber, and the second film forming chamber are disposed adjacent to or close to each other in one direction, and the substrate is continuously processed in each chamber by the transfer by the transfer means. The atmospheric open type chemical vapor deposition apparatus according to any one of claims 6 and 7 , wherein the apparatus is configured as described above. A base material transported by the transport means or a transport slit portion through which the transport means can pass is provided at the bottom of the preheating chamber, the first film forming chamber, and the second film forming chamber, respectively. Item 9. The atmospheric open chemical vapor deposition apparatus according to any one of Items 6 to 8 . The preheating chamber, a first film chamber and the second film forming chamber, any one of the claims 6-9, characterized in that provided in the continuously provided state through a gate valve portion for partitioning these chambers An open-air chemical vapor deposition apparatus according to claim 1. The atmosphere open type according to any one of claims 1 to 10 , wherein a cooling chamber provided with a cooling means for cooling the base material is provided in a continuous state in the second film forming chamber. Chemical vapor deposition equipment. The transporting means is configured so that an oxide film can be formed in a stopped state or a transported state when the base material is deposited in the first film forming chamber and the second film forming chamber. The open air chemical vapor deposition apparatus according to any one of 1 to 11 .

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