JP4472358B2 - ツインステージリソグラフィツールにおける干渉計システム誤差の補償 - Google Patents
ツインステージリソグラフィツールにおける干渉計システム誤差の補償 Download PDFInfo
- Publication number
- JP4472358B2 JP4472358B2 JP2003584816A JP2003584816A JP4472358B2 JP 4472358 B2 JP4472358 B2 JP 4472358B2 JP 2003584816 A JP2003584816 A JP 2003584816A JP 2003584816 A JP2003584816 A JP 2003584816A JP 4472358 B2 JP4472358 B2 JP 4472358B2
- Authority
- JP
- Japan
- Prior art keywords
- stage
- interferometer
- wafer
- exposure
- error
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000001459 lithography Methods 0.000 title claims description 58
- 238000005259 measurement Methods 0.000 claims description 154
- 235000012431 wafers Nutrition 0.000 claims description 139
- 238000000034 method Methods 0.000 claims description 68
- 230000000737 periodic effect Effects 0.000 claims description 47
- 230000003287 optical effect Effects 0.000 claims description 42
- 238000012544 monitoring process Methods 0.000 claims description 27
- 238000006073 displacement reaction Methods 0.000 claims description 22
- 230000008859 change Effects 0.000 claims description 21
- 238000005286 illumination Methods 0.000 claims description 20
- 101150057741 pknL gene Proteins 0.000 claims description 15
- 238000005305 interferometry Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000012937 correction Methods 0.000 claims description 7
- 238000003860 storage Methods 0.000 claims description 6
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 description 11
- 230000008569 process Effects 0.000 description 9
- 238000012512 characterization method Methods 0.000 description 8
- 230000008901 benefit Effects 0.000 description 4
- 238000011065 in-situ storage Methods 0.000 description 4
- 238000001393 microlithography Methods 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 230000001419 dependent effect Effects 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000035559 beat frequency Effects 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
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- 238000010586 diagram Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
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- 230000002860 competitive effect Effects 0.000 description 1
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- 238000013016 damping Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
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- 238000012821 model calculation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 238000000059 patterning Methods 0.000 description 1
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Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Instruments For Measurement Of Length By Optical Means (AREA)
- Length Measuring Devices By Optical Means (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US37186902P | 2002-04-11 | 2002-04-11 | |
| PCT/US2003/011048 WO2003087934A2 (en) | 2002-04-11 | 2003-04-11 | Interferometry system error compensation in twin stage lithography tools |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005522705A JP2005522705A (ja) | 2005-07-28 |
| JP2005522705A5 JP2005522705A5 (cg-RX-API-DMAC10.html) | 2010-03-18 |
| JP4472358B2 true JP4472358B2 (ja) | 2010-06-02 |
Family
ID=29250751
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003584816A Expired - Fee Related JP4472358B2 (ja) | 2002-04-11 | 2003-04-11 | ツインステージリソグラフィツールにおける干渉計システム誤差の補償 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6924896B2 (cg-RX-API-DMAC10.html) |
| JP (1) | JP4472358B2 (cg-RX-API-DMAC10.html) |
| AU (1) | AU2003223545A1 (cg-RX-API-DMAC10.html) |
| WO (1) | WO2003087934A2 (cg-RX-API-DMAC10.html) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002134396A (ja) * | 2000-10-25 | 2002-05-10 | Sony Corp | 半導体装置の製造方法および半導体パターン自動調節装置 |
| US7251042B2 (en) * | 2003-10-30 | 2007-07-31 | Asml Netherlands B.V. | Lithographic apparatus, interferometer and device manufacturing method |
| US7768624B2 (en) * | 2004-06-03 | 2010-08-03 | Board Of Regents, The University Of Texas System | Method for obtaining force combinations for template deformation using nullspace and methods optimization techniques |
| US20060047462A1 (en) * | 2004-08-31 | 2006-03-02 | Picciotto Carl E | Displacement estimation system and method |
| WO2006040890A1 (ja) * | 2004-10-08 | 2006-04-20 | Nikon Corporation | 露光装置及びデバイス製造方法 |
| EP1975981A1 (en) * | 2005-12-28 | 2008-10-01 | Nikon Corporation | Pattern formation method, pattern formation device, and device fabrication method |
| JP5558005B2 (ja) * | 2006-01-23 | 2014-07-23 | ザイゴ コーポレーション | 物体をモニタする干渉計システム |
| TW200815912A (en) * | 2006-04-03 | 2008-04-01 | Molecular Imprints Inc | Method for obtaining force combinations for template deformation using nullspace and methods optimization techniques |
| KR100781985B1 (ko) * | 2006-07-14 | 2007-12-06 | 삼성전자주식회사 | 변위 간섭계 시스템 및 그가 채용되는 노광설비 |
| US7970577B2 (en) * | 2007-06-11 | 2011-06-28 | Applied Materials Israel, Ltd. | Method and system for evaluating an object that has a repetitive pattern |
| CN101874194B (zh) * | 2007-09-17 | 2013-03-20 | 安华高科技光纤Ip(新加坡)私人有限公司 | 用于测量风力发电设备形变的光纤传感器 |
| NL1036180A1 (nl) * | 2007-11-20 | 2009-05-25 | Asml Netherlands Bv | Stage system, lithographic apparatus including such stage system, and correction method. |
| US8120781B2 (en) | 2008-11-26 | 2012-02-21 | Zygo Corporation | Interferometric systems and methods featuring spectral analysis of unevenly sampled data |
| US8760629B2 (en) | 2008-12-19 | 2014-06-24 | Nikon Corporation | Exposure apparatus including positional measurement system of movable body, exposure method of exposing object including measuring positional information of movable body, and device manufacturing method that includes exposure method of exposing object, including measuring positional information of movable body |
| US8902402B2 (en) | 2008-12-19 | 2014-12-02 | Nikon Corporation | Movable body apparatus, exposure apparatus, exposure method, and device manufacturing method |
| US8773635B2 (en) * | 2008-12-19 | 2014-07-08 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
| US8599359B2 (en) * | 2008-12-19 | 2013-12-03 | Nikon Corporation | Exposure apparatus, exposure method, device manufacturing method, and carrier method |
| CN112835269B (zh) * | 2021-01-19 | 2024-04-12 | 上海集成电路装备材料产业创新中心有限公司 | 一种光刻装置及曝光方法 |
| CN113532324A (zh) * | 2021-08-31 | 2021-10-22 | 中国科学院重庆绿色智能技术研究院 | 一种纳米精度多维光学干涉测量系统及其测量方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5363196A (en) | 1992-01-10 | 1994-11-08 | Ultratech Stepper, Inc. | Apparatus for measuring a departure from flatness or straightness of a nominally-plane mirror for a precision X-Y movable-stage |
| JP3653827B2 (ja) * | 1995-10-20 | 2005-06-02 | 株式会社ニコン | 干渉計 |
| CN1244018C (zh) * | 1996-11-28 | 2006-03-01 | 株式会社尼康 | 曝光方法和曝光装置 |
| JP2000049066A (ja) | 1998-07-27 | 2000-02-18 | Canon Inc | 露光装置およびデバイス製造方法 |
| JP4211150B2 (ja) | 1998-08-20 | 2009-01-21 | 株式会社ニコン | レーザ干渉計及び露光装置 |
| US6785005B2 (en) * | 2001-09-21 | 2004-08-31 | Nikon Corporation | Switching type dual wafer stage |
| US6665054B2 (en) * | 2001-10-22 | 2003-12-16 | Nikon Corporation | Two stage method |
| US6777143B2 (en) * | 2002-01-28 | 2004-08-17 | Taiwan Semiconductor Manufacturing Company | Multiple mask step and scan aligner |
-
2003
- 2003-04-11 JP JP2003584816A patent/JP4472358B2/ja not_active Expired - Fee Related
- 2003-04-11 AU AU2003223545A patent/AU2003223545A1/en not_active Abandoned
- 2003-04-11 WO PCT/US2003/011048 patent/WO2003087934A2/en not_active Ceased
- 2003-04-11 US US10/411,890 patent/US6924896B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| WO2003087934A3 (en) | 2004-02-26 |
| JP2005522705A (ja) | 2005-07-28 |
| WO2003087934A2 (en) | 2003-10-23 |
| US6924896B2 (en) | 2005-08-02 |
| AU2003223545A8 (en) | 2003-10-27 |
| AU2003223545A1 (en) | 2003-10-27 |
| US20030223079A1 (en) | 2003-12-04 |
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