JP4472358B2 - ツインステージリソグラフィツールにおける干渉計システム誤差の補償 - Google Patents

ツインステージリソグラフィツールにおける干渉計システム誤差の補償 Download PDF

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Publication number
JP4472358B2
JP4472358B2 JP2003584816A JP2003584816A JP4472358B2 JP 4472358 B2 JP4472358 B2 JP 4472358B2 JP 2003584816 A JP2003584816 A JP 2003584816A JP 2003584816 A JP2003584816 A JP 2003584816A JP 4472358 B2 JP4472358 B2 JP 4472358B2
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JP
Japan
Prior art keywords
stage
interferometer
wafer
exposure
error
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2003584816A
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English (en)
Japanese (ja)
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JP2005522705A (ja
JP2005522705A5 (cg-RX-API-DMAC10.html
Inventor
エイ. ヒル、ヘンリー
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Zygo Corp
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Zygo Corp
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Publication date
Application filed by Zygo Corp filed Critical Zygo Corp
Publication of JP2005522705A publication Critical patent/JP2005522705A/ja
Publication of JP2005522705A5 publication Critical patent/JP2005522705A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Instruments For Measurement Of Length By Optical Means (AREA)
  • Length Measuring Devices By Optical Means (AREA)
JP2003584816A 2002-04-11 2003-04-11 ツインステージリソグラフィツールにおける干渉計システム誤差の補償 Expired - Fee Related JP4472358B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US37186902P 2002-04-11 2002-04-11
PCT/US2003/011048 WO2003087934A2 (en) 2002-04-11 2003-04-11 Interferometry system error compensation in twin stage lithography tools

Publications (3)

Publication Number Publication Date
JP2005522705A JP2005522705A (ja) 2005-07-28
JP2005522705A5 JP2005522705A5 (cg-RX-API-DMAC10.html) 2010-03-18
JP4472358B2 true JP4472358B2 (ja) 2010-06-02

Family

ID=29250751

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003584816A Expired - Fee Related JP4472358B2 (ja) 2002-04-11 2003-04-11 ツインステージリソグラフィツールにおける干渉計システム誤差の補償

Country Status (4)

Country Link
US (1) US6924896B2 (cg-RX-API-DMAC10.html)
JP (1) JP4472358B2 (cg-RX-API-DMAC10.html)
AU (1) AU2003223545A1 (cg-RX-API-DMAC10.html)
WO (1) WO2003087934A2 (cg-RX-API-DMAC10.html)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002134396A (ja) * 2000-10-25 2002-05-10 Sony Corp 半導体装置の製造方法および半導体パターン自動調節装置
US7251042B2 (en) * 2003-10-30 2007-07-31 Asml Netherlands B.V. Lithographic apparatus, interferometer and device manufacturing method
US7768624B2 (en) * 2004-06-03 2010-08-03 Board Of Regents, The University Of Texas System Method for obtaining force combinations for template deformation using nullspace and methods optimization techniques
US20060047462A1 (en) * 2004-08-31 2006-03-02 Picciotto Carl E Displacement estimation system and method
WO2006040890A1 (ja) * 2004-10-08 2006-04-20 Nikon Corporation 露光装置及びデバイス製造方法
EP1975981A1 (en) * 2005-12-28 2008-10-01 Nikon Corporation Pattern formation method, pattern formation device, and device fabrication method
JP5558005B2 (ja) * 2006-01-23 2014-07-23 ザイゴ コーポレーション 物体をモニタする干渉計システム
TW200815912A (en) * 2006-04-03 2008-04-01 Molecular Imprints Inc Method for obtaining force combinations for template deformation using nullspace and methods optimization techniques
KR100781985B1 (ko) * 2006-07-14 2007-12-06 삼성전자주식회사 변위 간섭계 시스템 및 그가 채용되는 노광설비
US7970577B2 (en) * 2007-06-11 2011-06-28 Applied Materials Israel, Ltd. Method and system for evaluating an object that has a repetitive pattern
CN101874194B (zh) * 2007-09-17 2013-03-20 安华高科技光纤Ip(新加坡)私人有限公司 用于测量风力发电设备形变的光纤传感器
NL1036180A1 (nl) * 2007-11-20 2009-05-25 Asml Netherlands Bv Stage system, lithographic apparatus including such stage system, and correction method.
US8120781B2 (en) 2008-11-26 2012-02-21 Zygo Corporation Interferometric systems and methods featuring spectral analysis of unevenly sampled data
US8760629B2 (en) 2008-12-19 2014-06-24 Nikon Corporation Exposure apparatus including positional measurement system of movable body, exposure method of exposing object including measuring positional information of movable body, and device manufacturing method that includes exposure method of exposing object, including measuring positional information of movable body
US8902402B2 (en) 2008-12-19 2014-12-02 Nikon Corporation Movable body apparatus, exposure apparatus, exposure method, and device manufacturing method
US8773635B2 (en) * 2008-12-19 2014-07-08 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8599359B2 (en) * 2008-12-19 2013-12-03 Nikon Corporation Exposure apparatus, exposure method, device manufacturing method, and carrier method
CN112835269B (zh) * 2021-01-19 2024-04-12 上海集成电路装备材料产业创新中心有限公司 一种光刻装置及曝光方法
CN113532324A (zh) * 2021-08-31 2021-10-22 中国科学院重庆绿色智能技术研究院 一种纳米精度多维光学干涉测量系统及其测量方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5363196A (en) 1992-01-10 1994-11-08 Ultratech Stepper, Inc. Apparatus for measuring a departure from flatness or straightness of a nominally-plane mirror for a precision X-Y movable-stage
JP3653827B2 (ja) * 1995-10-20 2005-06-02 株式会社ニコン 干渉計
CN1244018C (zh) * 1996-11-28 2006-03-01 株式会社尼康 曝光方法和曝光装置
JP2000049066A (ja) 1998-07-27 2000-02-18 Canon Inc 露光装置およびデバイス製造方法
JP4211150B2 (ja) 1998-08-20 2009-01-21 株式会社ニコン レーザ干渉計及び露光装置
US6785005B2 (en) * 2001-09-21 2004-08-31 Nikon Corporation Switching type dual wafer stage
US6665054B2 (en) * 2001-10-22 2003-12-16 Nikon Corporation Two stage method
US6777143B2 (en) * 2002-01-28 2004-08-17 Taiwan Semiconductor Manufacturing Company Multiple mask step and scan aligner

Also Published As

Publication number Publication date
WO2003087934A3 (en) 2004-02-26
JP2005522705A (ja) 2005-07-28
WO2003087934A2 (en) 2003-10-23
US6924896B2 (en) 2005-08-02
AU2003223545A8 (en) 2003-10-27
AU2003223545A1 (en) 2003-10-27
US20030223079A1 (en) 2003-12-04

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