JP4454534B2 - Thin film manufacturing apparatus and cleaning method - Google Patents

Description

  The present invention relates to a thin film production apparatus for depositing a metal component, which can efficiently clean a metal component and a halide of the metal component.

  The present invention also relates to a cleaning method capable of efficiently cleaning a metal component and a halide of the metal component in a thin film manufacturing apparatus for forming a metal component.

  Currently, in the manufacture of semiconductors and the like, film formation using a plasma CVD (Chemical Vapor Deposition) apparatus is known. A plasma CVD apparatus is a plasma reaction of a gas such as an organometallic complex that becomes a material of a film introduced into a chamber by a high frequency incident from a high frequency antenna, and a chemical reaction on the substrate surface by active excited atoms in the plasma. Is a device for forming a metal thin film or the like by promoting the above.

  On the other hand, the present inventors installed a member to be etched, which is a metal component for producing a high vapor pressure halide, and made of a metal component desired to be formed into a chamber, and converted the halogen gas into plasma to form the member to be etched. A plasma CVD apparatus (hereinafter referred to as a new type of plasma CVD apparatus) that forms a precursor, which is a halide of a metal component, by etching with a radical of halogen, and deposits only the metal component of the precursor on a substrate. And a film forming method has been developed (for example, see Patent Document 1 below).

In the above-described plasma CVD apparatus of the new type, the metal film is formed on the substrate by controlling the temperature of the substrate to be lower than the temperature of the member to be etched which is a metal source to be formed. For example, when the metal of the member to be etched is M and the halogen gas is Cl ₂ , the member to be etched is controlled to a high temperature (for example, 300 ° C. to 700 ° C.) and the substrate is controlled to a low temperature (for example, about 200 ° C.) An M thin film can be formed on the substrate. This is thought to be due to the following reaction.

(1) Plasma dissociation reaction; Cl ₂ → 2Cl ^*
(2) Etching reaction; M + Cl ^* → MCl (g)
(3) Adsorption reaction on the substrate; MC1 (g) → MC1 (ad)
(4) Film formation reaction; MCl (ad) + Cl ^* → M + Cl ₂ ↑
Here, Cl ^* represents a Cl radical, (g) represents a gas state, and (ad) represents an adsorption state.

In the above-described new type CVD apparatus, the film forming reaction is appropriately performed by keeping the ratio of MCl and Cl ^* appropriately. That is, as the film formation conditions, the ratio of MCl and Cl ^* is set by appropriately setting the flow rate of Cl ₂ gas, pressure, power, the temperature of the substrate and the member to be etched, the distance between the substrate and the member to be etched, and the like. It can be controlled almost equally, and M is deposited without reducing the deposition rate and without causing excessive etching by Cl ^{* on} the substrate.

  In the above-described new type CVD apparatus, when film formation on the substrate is continued, a metal halide thin film and an M thin film are deposited on the inner wall of the chamber. For this reason, a halogen gas such as chlorine is supplied into the chamber every predetermined period to turn the halogen gas into a plasma, and the metal halide thin film deposited in the chamber by halogen radicals is metalized and etched. The deposit is removed by etching the M thin film deposited in the chamber by radicals (cleaning).

As a technique for cleaning, a technique of vaporizing and discharging a metal or an oxide with chlorine gas plasma using thermal energy (for example, see Patent Document 2 below), or an NF ₃ gas using remote plasma is used. A technique for removing a kimono (for example, see Patent Document 3 below) is known.

  In the new type CVD apparatus, a metal halide thin film and an M thin film exist as deposits. That is, the M thin film is likely to adhere to the upper part of the chamber at a high temperature because there are many reduction reactions, and the reduction reaction is relatively less likely to adhere to the metal halide thin film at the lower part of the chamber at a low temperature.

In the conventional cleaning using thermal energy, since the cleaning is performed at a high temperature, the transition time from the film forming process to the cleaning process becomes long, and the chamber parts must be made of a high heat resistant material. Also, in cleaning that removes deposits with NF ₃ gas, it is difficult to clean the metal oxide film because the vapor pressure of the reaction product is low. In the prior art, both the metal halide thin film and the M thin film cannot be removed efficiently, and there is a limit to the efficiency and cost reduction.

JP 2003-147534 A JP-A-6-188199 JP-A-6-188199

  The present invention has been made in view of the above situation, and an object of the present invention is to provide a thin film production apparatus capable of efficiently removing both a metal halide thin film and a metal thin film.

  Another object of the present invention is to provide a cleaning method capable of efficiently removing both the metal halide thin film and the metal thin film.

In order to achieve the above object, a thin film manufacturing apparatus according to claim 1 of the present invention includes a chamber in which a susceptor holding a substrate is accommodated, a metal member to be etched,
Halogen gas supply means for supplying halogen gas containing halogen to the inside of the chamber, and generating the halogen radicals by generating the halogen gas plasma by plasmaizing the inside of the chamber, and removing the deposits with the halogen radicals. The plasma generating means for cleaning the inside of the chamber, and the pressure in the chamber is controlled to a predetermined pressure state to remove the deposits of the metal component, and the pressure of the metal halide component is controlled to a relatively high pressure A pressure control means for removing the deposits,
The thin film is produced by supplying a halogen gas from the halogen gas supply means, etching the member to be etched with halogen radicals generated by the plasma generation means to form a precursor of a metal component and a halogen gas component, The precursor is adsorbed on the substrate, and a halogen gas component is reduced by halogen radicals to deposit a metal component on the substrate. During cleaning, the member to be etched is retracted from the chamber.

According to the first aspect of the present invention, the pressure in the chamber is changed by the pressure control means, the lifetime of the halogen radical is lengthened to remove the metal thin film by etching, and the metal halide thin film is removed at a high vapor pressure. By removing, both the metal halide thin film and the metal thin film can be efficiently removed. In addition, it is possible to efficiently perform cleaning in a thin film manufacturing apparatus capable of depositing metal without reducing the deposition rate and without causing excessive etching due to halogen radicals on the substrate.

In order to achieve the above object, a thin film manufacturing apparatus according to a second aspect of the present invention includes a chamber in which a susceptor holding a substrate is accommodated, a metal member to be etched,
Halogen gas supply means for supplying halogen gas containing halogen to the inside of the chamber, and generating the halogen radicals by generating the halogen gas plasma by plasmaizing the inside of the chamber, and removing the deposits with the halogen radicals. Plasma generating means for cleaning the inside ,
The susceptor is brought into a state in which the metal component deposits are removed by raising the susceptor and the metal susceptor is removed in a relatively low temperature state by lowering the susceptor. Elevating means,
The thin film is produced by supplying a halogen gas from the halogen gas supply means, etching the member to be etched with halogen radicals generated by the plasma generation means to form a precursor of a metal component and a halogen gas component, It is carried out by adsorbing the precursor to the substrate and reducing the halogen gas component by halogen radicals to deposit the metal component on the substrate,
In cleaning, the member to be etched is retracted from the chamber.

In the present invention according to claim 2, the temperature environment is changed by changing the position of the susceptor by the susceptor elevating means, and the metal thin film is etched and removed under a high temperature environment, and the metal halide is removed under a relatively low temperature environment. By removing the thin film, both the metal halide thin film and the metal thin film can be uniformly and efficiently removed. In addition, it is possible to efficiently perform cleaning in a thin film manufacturing apparatus capable of depositing metal without reducing the deposition rate and without causing excessive etching due to halogen radicals on the substrate.

In order to achieve the above object, a thin film manufacturing apparatus according to a third aspect of the present invention includes a chamber in which a susceptor for holding a substrate is accommodated, a metal member to be etched, and a halogen gas containing halogen inside the chamber. A plasma generating means for cleaning the inside of the chamber by generating a halogen radical by generating a halogen gas plasma by plasmaizing the inside of the chamber and removing deposits with the halogen radical ;
Cleaning gas supply means for supplying halogen gas from a position away from the wall surface of the chamber, and supply of halogen gas from the halogen gas supply means and the cleaning gas supply means were controlled to suppress the temperature drop of the chamber wall surface by the halogen gas. Control means for making a state,
The thin film is produced by supplying a halogen gas from the halogen gas supply means, etching the member to be etched with halogen radicals generated by the plasma generation means to form a precursor of a metal component and a halogen gas component, The precursor is adsorbed on the substrate, and a halogen gas component is reduced by halogen radicals to deposit a metal component on the substrate. During cleaning, the member to be etched is retracted from the chamber.

In the present invention according to claim 3, the supply of the halogen gas from the halogen gas supply means and the cleaning gas supply means is selected, and the metal thin film is etched in a state in which the temperature decrease of the wall surface of the chamber due to the halogen gas is suppressed. By removing the metal halide thin film, both the metal halide thin film and the metal thin film can be efficiently removed. In addition, it is possible to efficiently perform cleaning in a thin film manufacturing apparatus capable of depositing metal without reducing the deposition rate and without causing excessive etching due to halogen radicals on the substrate.

In order to achieve the above object, a thin film manufacturing apparatus according to a fourth aspect of the present invention includes a chamber in which a susceptor holding a substrate is accommodated, a metal member to be etched,
Halogen gas supply means for supplying halogen gas containing halogen to the inside of the chamber, and generating the halogen radicals by generating the halogen gas plasma by plasmaizing the inside of the chamber, and removing the deposits with the halogen radicals. Plasma generating means for cleaning the inside, and temperature distribution applying means for applying temperature distribution to the wall surface of the chamber,
The thin film is produced by supplying a halogen gas from the halogen gas supply means, etching the member to be etched with halogen radicals generated by the plasma generation means to form a precursor of a metal component and a halogen gas component, The precursor is adsorbed on the substrate, and a halogen gas component is reduced by halogen radicals to deposit a metal component on the substrate. During cleaning, the member to be etched is retracted from the chamber.

In the present invention according to claim 4, the temperature distribution is imparted to the wall surface of the chamber by the temperature distribution imparting means, and the metal thin film is etched and removed while keeping the temperature of the wall surface uniformly high. By removing the thin film, both the metal halide thin film and the metal thin film can be efficiently removed at low cost. In addition, it is possible to efficiently perform cleaning in a thin film manufacturing apparatus capable of depositing metal without reducing the deposition rate and without causing excessive etching due to halogen radicals on the substrate.

  A thin film production apparatus according to a fifth aspect of the present invention is the thin film production apparatus according to the fourth aspect, wherein the temperature distribution applying means is provided with a resistance heating means around the chamber.

  In this invention which concerns on Claim 5, a temperature distribution can be provided without costing with an inexpensive installation.

  The thin film production apparatus according to a sixth aspect of the present invention is the thin film production apparatus according to the fourth aspect, wherein the temperature distribution applying means is provided with induction heating means around the chamber.

  In the present invention according to claim 6, the temperature distribution can be imparted with good controllability.

  A thin film production apparatus according to a seventh aspect of the present invention is the thin film production apparatus according to the fourth aspect, wherein the temperature distribution applying means is provided with a light heating means around the chamber.

  In the present invention according to claim 7, the temperature distribution can be imparted with high efficiency.

In order to achieve the above object, a thin film manufacturing apparatus according to an eighth aspect of the present invention includes a chamber in which a susceptor holding a substrate is accommodated, a metal member to be etched, and a halogen gas containing halogen inside the chamber. A plasma generating means for cleaning the inside of the chamber by generating a halogen radical by generating a halogen gas plasma by plasmaizing the inside of the chamber and removing deposits with the halogen radical ; Gas supply means for supplying a boron-based or silicon-based gas into the chamber and using a metal halide component as a metal component, and
The thin film is produced by supplying a halogen gas from the halogen gas supply means, etching the member to be etched with halogen radicals generated by the plasma generation means to form a precursor of a metal component and a halogen gas component, It is carried out by adsorbing the precursor to the substrate and reducing the halogen gas component by halogen radicals to deposit the metal component on the substrate,
In cleaning, the member to be etched is retracted from the chamber.

In the present invention according to claim 8, boron-based or silicon-based gas is supplied into the chamber by the gas supply means, a stable metal as a metal halide is converted into a metal component by reduction, and the metal thin film is etched and removed. Thus, both the metal halide thin film and the metal thin film can be efficiently removed at low cost. In addition, it is possible to efficiently perform cleaning in a thin film manufacturing apparatus capable of depositing metal without reducing the deposition rate and without causing excessive etching due to halogen radicals on the substrate.

The cleaning method of the present invention according to claim 9 for achieving the above object is a cleaning method of a thin film preparation apparatus according to claim 1, retracts the etched material from the chamber The chamber is cleaned by removing deposits of metal components with halogen radicals, and the chamber is cleaned by removing deposits of precursor components under different conditions.

  In the present invention according to claim 10, since the deposits of the precursor components are removed under different conditions, the metal thin film is etched and removed, and the metal halide thin film is removed to remove halogen. Both the metal halide thin film and the metal thin film can be efficiently removed.

  The thin film production apparatus of the present invention can efficiently remove both the metal halide thin film and the metal thin film.

  The cleaning method of the present invention can efficiently remove both the metal halide thin film and the metal thin film.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

  The thin film production apparatus according to the first embodiment shown in FIG. 1 controls the pressure in the chamber to change the pressure state in the chamber, and removes the metal thin film (for example, Ta thin film) by etching, and the metal halide. An example of removing a thin film (for example, a TaCl thin film) under high vapor pressure is shown. The thin film production apparatus according to the second embodiment shown in FIGS. 2 and 3 changes the temperature environment of the susceptor by moving the susceptor up and down, and removes the metal thin film (for example, Ta thin film) by etching, and metal halide. An example of removing a thin film (for example, a TaCl thin film) is shown.

  The thin film manufacturing apparatus of the third embodiment shown in FIG. 4 is in a state in which a high temperature state is maintained by combining a supply of halogen gas from a position away from the wall surface of the chamber to suppress a temperature drop on the wall surface of the chamber. In this example, the metal thin film (for example, Ta thin film) is removed by etching and the metal halide thin film (for example, TaCl thin film) is removed. The thin film production apparatus according to the fourth to sixth embodiments shown in FIGS. 5 to 7 applies temperature distribution to the wall surface of the chamber, uniformly raises the wall surface, and etches a metal thin film (for example, a Ta thin film). An example of removing a metal halide thin film (for example, a TaCl thin film) is shown.

  In the seventh embodiment shown in FIG. 8, a boron-based or silicon-based gas is supplied, a stable metal halide thin film (for example, a NiCl thin film) is metalized and etched away, and a metal thin film ( For example, Ni thin film) is removed by etching.

  The thin film manufacturing apparatus according to the first to seventh embodiments supplies the halogen gas from the halogen gas supply means, and etches the metal member to be etched with the halogen radicals generated by the plasma generation means. Forming a thin film by forming a precursor of a metal component and a halogen gas component, adsorbing the precursor to the substrate, reducing the halogen gas component with a halogen radical, and precipitating the metal component on the substrate It has become. When cleaning is performed by a thin film manufacturing apparatus, the member to be etched is retracted to the outside of the chamber.

(First embodiment)
A first embodiment will be described with reference to FIG. FIG. 1 shows a schematic side view of a thin film production apparatus according to a first embodiment of the present invention.

  As shown in FIG. 1, a support base 2 as a susceptor is provided in the vicinity of the bottom of a chamber 1 made of, for example, ceramic (made of an insulating material), and a substrate 3 is mounted on the support base 2. Placed. The support base 2 is provided with a temperature control means 6 including a heater 4 and a refrigerant flow means 5, and the support base 2 is set to a predetermined temperature (for example, a temperature at which the substrate 3 is maintained at 100 ° C. to 300 ° C.) by the temperature control means 6. ) Is controlled. The shape of the chamber is not limited to a cylindrical shape, and for example, a rectangular chamber can be applied.

  The upper surface of the chamber 1 is an opening, and the opening is closed by a plate-like ceiling plate 7 made of an insulating material (for example, ceramic). A plasma antenna 8 for converting the inside of the chamber 1 into plasma is provided above the ceiling plate 7, and the plasma antenna 8 is formed in a planar ring shape parallel to the surface of the ceiling plate 7. A matching unit 9 and a power source 10 are connected to the plasma antenna 8 to supply a high frequency. Plasma generating means for generating induction plasma is constituted by the plasma antenna 8, the matching unit 9 and the power source 10.

  The chamber 1 holds a member to be etched 11 made of, for example, tantalum (made of Ta), and the member to be etched 11 is in a discontinuous state between the substrate 3 and the ceiling plate 7 with respect to the electric flow of the plasma antenna 8. Has been placed. For example, the member 11 to be etched is formed in a lattice shape and is structurally discontinuous with respect to the circumferential direction, which is the direction of electricity flow of the plasma antenna 8. The member to be etched 11 is retractable to the outside of the chamber 1 during a cleaning process described later.

  In addition, as a structure which makes a discontinuous state with respect to the electric flow of the plasma antenna 8, the structure to be etched is configured in a mesh shape, or a plurality of long protrusions are formed on the inner peripheral side of the ring. It is also possible to do.

A nozzle 14 as a halogen gas supply means for supplying a halogen gas (Cl ₂ gas) 21 containing chlorine as a halogen into the chamber 1 is provided in the circumferential direction around the cylinder portion of the chamber 1 above the member to be etched 11. Are connected at equal intervals (for example, 8 locations: 2 locations are shown in the figure). A Cl ₂ gas 21 is sent to the nozzle 14 via a flow rate controller 15 whose flow rate and pressure are controlled. The amount of Cl ₂ gas 21 supplied into the chamber 1 is controlled by the flow rate controller 15.

  Gases that are not involved in film formation are exhausted from the exhaust port 18. The interior of the chamber 1 closed by the ceiling plate 7 is maintained at a predetermined pressure by the vacuum device 19. The vacuum device 19 is controlled by the pressure control means 20, and the inside of the chamber is controlled to a predetermined pressure.

  As halogen contained in the working gas, fluorine, bromine, iodine and the like can be applied. By using chlorine as the halogen, a thin film can be manufactured using inexpensive chlorine gas.

In the thin film manufacturing apparatus described above, the Cl ₂ gas 21 is supplied into the chamber 1 from the nozzle 14. When electromagnetic waves are incident on the inside of the chamber 1 from the plasma antenna 8, the Cl ₂ gas 21 is ionized to generate Cl ₂ gas plasma to generate Cl radicals. The plasma is generated in the region shown by the gas plasma 23. The reaction at this time can be expressed by the following formula.

Cl ₂ → 2Cl ^* (1)
Here, Cl ^* represents a chlorine radical.

  When the gas plasma 23 acts on the Ta member to be etched 11, the member to be etched 11 is heated and an etching reaction occurs in Ta. The reaction at this time is represented by the following formula, for example.

Ta (s) + Cl ^* → TaCl (g) (2)
Here, s represents a solid state and g represents a gas state. Formula (2) is a state in which Ta is etched by gas plasma 23 (chlorine radical Cl ^* ) to form a precursor 24.

  The member to be etched 11 is heated by generating the gas plasma 23 (for example, 300 ° C. to 700 ° C.), and the temperature of the substrate 3 is lower than the temperature of the member to be etched 11 by the temperature control means 6 (for example, 100 ° C. to 300 ° C.). As a result, the precursor 24 is adsorbed (deposited) on the substrate 3. The reaction at this time is represented by the following formula, for example.

      TaCl (g) → TaCl (ad) (3)

Ta adsorbed on the substrate 3 is reduced by the chlorine radical Cl ^* to become a Ta component.
The reaction at this time is represented by the following formula, for example.

TaCl (ad) + Cl ^* → Ta (s) + Cl ₂ ↑ (4)

Furthermore, a part of the gasified TaCl (g) generated in the above formula (2) is reduced by the chlorine radical Cl ^* before being adsorbed to the substrate 3 (see the above formula (3)), and is in a gaseous state. It may become. The reaction at this time is represented by the following formula, for example.

TaCl (g) + Cl ^* → Ta (g) + Cl ₂ ↑ (5)

  Thereafter, the Ni component in the gas state is adsorbed on the substrate 3.

As a result, a Ta thin film is formed on the substrate 3. When the film formation on the substrate 3 is continued, a TaCl thin film and a Ta thin film are also deposited on the inner wall of the chamber 1. For this reason, after the member to be etched 11 is retracted by a retracting means (not shown) at every predetermined period, the Cl ₂ gas 21 is converted into plasma and the deposits of the TaCl thin film 26 and the Ta thin film 25 adhered to the chamber 1 by Cl ^* . Is removed (cleaning).

Since there is a large amount of Cl ^* above the chamber 1, there are many Ta thin films 25, and there is a large amount of TaCl thin film 26 below the chamber 1 because Cl ^* is relatively reduced. For this reason, in the present embodiment, the pressure in the chamber 1 is adjusted by the pressure control means 20 during cleaning, and the Ta thin film 25 and the TaCl thin film 26 are efficiently removed.

That is, first, the Cl ₂ gas 21 is turned into plasma at a relatively low pressure to extend the life of Cl ^* , widen the plasma range, raise the wall temperature, and etch the Ta thin film 25 existing above the chamber 1. To remove. Thereafter, the Cl ₂ gas 21 is converted into plasma at a high pressure, and the TaCl thin film 26 is vaporized and removed as TaCl ₅ having a high vapor pressure. Since the reaction rate increases as the supply amount of the Cl ₂ gas 21 increases, the high pressure condition is suitable. Therefore, it is efficient to perform the treatment by controlling the pressure from low pressure to high pressure.

  Therefore, both the TaCl thin film 26 which is a metal halide thin film and the Ta thin film 25 which is a metal thin film can be efficiently removed.

(Second Embodiment)
A second embodiment will be described with reference to FIGS. FIG. 2 shows a schematic side view of a thin film production apparatus according to a second embodiment of the present invention, and FIG. 3 shows a schematic side view of a state in which a support base is raised during cleaning. In addition, the same code | symbol is attached | subjected to the same member as the member shown in FIG. 1, and the overlapping description is abbreviate | omitted.

  As shown in the figure, the support base 2 is provided on an elevating support column 31, and the elevating support column 31 is movable up and down by driving an elevating drive means 32. The support table 2 is raised and lowered by raising and lowering the lifting support column 31. At the time of normal film formation, for example, the support base 2 is positioned at the lower end, and at the time of cleaning, the support base 2 is moved up and down to a raised position and a lowered position.

  Other configurations and film forming processes are the same as those of the embodiment shown in FIG.

Similar to the first embodiment, when the film formation on the substrate 3 is continued, a TaCl thin film and a Ta thin film are also deposited on the inner wall of the chamber 1. For this reason, after the member to be etched 11 is retracted by a retracting means (not shown) at every predetermined period, the Cl ₂ gas 21 is converted into plasma and the deposits of the TaCl thin film 26 and the Ta thin film 25 adhered to the chamber 1 by Cl ^* . Is removed (cleaning).

Since there is a large amount of Cl ^* above the chamber 1, there are many Ta thin films 25, and there is a large amount of TaCl thin film 26 below the chamber 1 because Cl ^* is relatively reduced. Further, a large amount of Ta thin film 25 adheres to the upper surface of the support base 2, and a large amount of TaCl thin film 26 adheres to the side portion of the support base 2. For this reason, in the present embodiment, during the cleaning, the support base 2 is moved up and down by the lift drive means 32, and the Ta thin film 25 and the TaCl thin film 26 are efficiently removed.

That is, as shown in FIG. 3, first, the support table 2 is raised to turn the Cl ₂ gas 21 into plasma, and the Ta thin film 25 attached to the wall surface and the upper surface of the support table 2 is removed by etching. Thereafter, the support table 2 is lowered (the state of FIG. 2 and the state indicated by the dotted line in FIG. 3) to a relatively low temperature state, and the TaCl thin film 26 adhering to the wall surface and the side surface of the support table 2 is removed. Thereby, the temperature environment of the support base 2 can be changed, and the Ta thin film 25 adhering to the wall surface and the upper surface of the support base 2 and the TaCl thin film 26 adhering to the wall surface and the side surface of the support base 2 can be removed uniformly.

  When removing the Ta thin film 25 and the TaCl thin film 26, it is effective to control the pressure in the chamber 1 as in the first embodiment.

  Therefore, both the TaCl thin film 26 which is a metal halide thin film and the Ta thin film 25 which is a metal thin film can be uniformly and efficiently removed.

(Third embodiment)
A third embodiment will be described with reference to FIG. FIG. 4 shows a schematic side view of a thin film manufacturing apparatus according to the third embodiment of the present invention. In addition, the same code | symbol is attached | subjected to the same member as the member shown in FIG. 1, and the overlapping description is abbreviate | omitted.

In the embodiment shown in FIG. 4, a second nozzle 35 as a cleaning gas supply means is provided at a position away from the wall surface of the chamber 1, for example, at a site of the ceiling plate 7. The Cl ₂ gas 21 is supplied from the second nozzle 35 into the chamber 1 during cleaning.

  Other configurations and film forming processes are the same as those of the embodiment shown in FIG.

As in the first embodiment, when film formation on the substrate 3 (see FIG. 1) is continued, a TaCl thin film and a Ta thin film are also deposited on the inner wall of the chamber 1. For this reason, after the member to be etched 11 (see FIG. 1) is evacuated by a not-shown evacuation means at predetermined intervals, the Cl ₂ gas 21 is converted into plasma and the TaCl thin film 26 adhered to the chamber 1 by Cl ^* and Ta The deposits on the thin film 25 are removed (cleaning).

Since the nozzle 14 is attached to the wall surface of the chamber 1, when the cleaning Cl ₂ gas 21 is supplied from the nozzle 14, the wall surface near the nozzle 14 is cooled by the Cl ₂ gas 21. Therefore, at the time of cleaning, the Cl ₂ gas 21 is supplied from the second nozzle 35 (the supply of gas is controlled by the control means) to suppress the temperature drop of the wall surface. Thereby, the Ta thin film 25 and the TaCl thin film 26 adhering to the wall surface can be removed while the wall surface of the chamber 1 is kept at a high temperature. The cleaning Cl ₂ gas 21 is alternately supplied from the second nozzle 35 and the nozzle 14 in a state where the temperature decrease of the wall surface is suppressed.

Incidentally, an example has been described in which a second nozzle 35 to the ceiling board 7, a second nozzle disposed around the support stand 2, it may be supplied Cl ₂ gas from a position away from the wall surface. When the nozzle is provided on the support base 2, it is more effective when used in the case of the structure in which the support base 2 moves up and down as shown in the second embodiment.

  Therefore, both the TaCl thin film 26 which is a metal halide thin film and the Ta thin film 25 which is a metal thin film can be efficiently removed in a state in which the temperature drop of the wall surface of the chamber 1 is suppressed.

(Fourth embodiment)
A fourth embodiment will be described with reference to FIG. FIG. 5 shows a schematic side view of a thin film manufacturing apparatus according to the fourth embodiment of the present invention. In addition, the same code | symbol is attached | subjected to the same member as the member shown in FIG. 1, and the overlapping description is abbreviate | omitted.

  The embodiment shown in the figure is provided with a temperature distribution applying means for applying a temperature distribution to the wall surface of the chamber 1. The wall surface is uniformly heated to remove a metal thin film (for example, a Ta thin film) by etching. An example of removing a metal halide thin film (for example, a TaCl thin film) is shown. That is, a heating coil 36 as a resistance heating means is provided in the inner peripheral portion of the chamber 1 below the portion where the gas plasma 23 of the chamber 1 is generated, and the heating coil 36 is energized so that the wall surface of the chamber 1 is partially The temperature distribution is given by being heated.

  Other configurations and film forming processes are the same as those of the embodiment shown in FIG.

As in the first embodiment, when film formation on the substrate 3 (see FIG. 1) is continued, a TaCl thin film and a Ta thin film are also deposited on the inner wall of the chamber 1. For this reason, after the member to be etched 11 (see FIG. 1) is retracted by a retracting means (not shown) at predetermined intervals, the wall surface is uniformly heated to high temperature without cost, and the Cl ₂ gas 21 is turned into plasma and Cl ^{By *} , the deposit | attachment of the TaCl thin film 26 and the Ta thin film 25 adhering in the chamber 1 is removed (cleaning).

  Therefore, the temperature of the wall surface of the chamber 1 can be kept high at low cost with an inexpensive facility, and the TaCl thin film 26 which is a metal halide thin film and the Ta thin film 25 which is a metal thin film are kept in a state where the wall temperature is kept high. Both of them can be removed efficiently.

(Fifth embodiment)
A fifth embodiment will be described with reference to FIG. FIG. 6 shows a schematic side view of a thin film manufacturing apparatus according to the fifth embodiment of the present invention. In addition, the same code | symbol is attached | subjected to the same member as the member shown in FIG. 1, and the overlapping description is abbreviate | omitted.

  In the embodiment shown in the drawing, a ceramic heater cylinder 38 is provided in a cylindrical portion of a metal (for example, SUS) chamber 37, and a heater coil (for example, a carbon coil) 39 is provided in the heater cylinder 38. It has been. An induction coil 40 as induction heating means is disposed around the heater cylinder 38, and the induction coil 40 is supplied with electric power from a power source 41. When electric power is supplied to the induction coil 40, the heater coil 39 is heated by induction heating, and the wall surface of the chamber 37 is partially heated to give a temperature distribution with good controllability.

  Other configurations and film forming processes are the same as those of the embodiment shown in FIG.

Similar to the first embodiment, when film formation on the substrate 3 (see FIG. 1) is continued, a TaCl thin film and a Ta thin film are also deposited on the inner wall of the chamber 37. For this reason, after the member to be etched 11 (see FIG. 1) is retracted by a retracting means (not shown) at every predetermined period, the wall surface is uniformly heated to a high temperature with good controllability, and the Cl ₂ gas 21 is converted into plasma and Cl ^*. The deposits of the TaCl thin film 26 and the Ta thin film 25 adhered in the chamber 1 are removed (cleaning).

  Therefore, the temperature of the wall surface of the chamber 37 can be kept high with good controllability, and both the TaCl thin film 26, which is a metal halide thin film, and the Ta thin film 25, which is a metal thin film, are made efficient with the wall temperature kept high. Can be removed well.

(Sixth embodiment)
A sixth embodiment will be described with reference to FIGS. 7 and 8 show a thin film manufacturing apparatus according to a sixth embodiment of the present invention. FIG. 7 is a schematic side view, and FIG. 8 is a cross section of the heater cylinder. The same members as those shown in FIGS. 1 and 6 are denoted by the same reference numerals, and redundant description is omitted.

  In the embodiment shown in the drawing, a ceramic heater cylinder 38 is provided in a cylindrical portion of a metal (for example, SUS) chamber 37, and a heater coil (for example, a carbon coil) 39 is provided in the heater cylinder 38. It has been. Around the heater tube 38, a halogen lamp 29 is disposed as a light heating means. By turning on the halogen lamp 29, the heater coil 39 is heated by radiation, and the wall surface of the chamber 37 is partially heated. The carbon coil is excellent in light absorption and is provided with a temperature distribution with high efficiency.

  Other configurations and film forming processes are the same as those of the embodiment shown in FIG.

Similar to the first embodiment, when film formation on the substrate 3 (see FIG. 1) is continued, a TaCl thin film and a Ta thin film are also deposited on the inner wall of the chamber 37. For this reason, after the member to be etched 11 (see FIG. 1) is retracted by a retracting means (not shown) at predetermined intervals, the wall surface is efficiently heated to a uniform high temperature, and the Cl ₂ gas 21 is converted into plasma and the chamber is formed by Cl ^*. The deposits of the TaCl thin film 26 and the Ta thin film 25 adhered in 1 are removed (cleaning).

  Accordingly, the temperature of the wall surface of the chamber 37 can be kept high with high efficiency, and both the TaCl thin film 26 that is a metal halide thin film and the Ta thin film 25 that is a metal thin film are efficiently maintained while keeping the temperature of the wall surface high. Can be removed well.

(Seventh embodiment)
A seventh embodiment will be described with reference to FIG. FIG. 9 shows a schematic side view of a thin film manufacturing apparatus according to a seventh embodiment of the present invention. In addition, the same code | symbol is attached | subjected to the same member as the member shown in FIG. 1, and the overlapping description is abbreviate | omitted. In the seventh embodiment, a case where Ni, which is a stable metal, is formed as the metal chloride will be described as an example.

In the embodiment shown in FIG. 9, a gas nozzle 30 for supplying a boron-based or silicon-based halogenated gas 12 is provided inside the chamber 1, and at the time of cleaning, a boron-based or silicon-based halogenated gas 12 is supplied from the gas nozzle 30. (BCl ₃ or SiCl ₄ ) is supplied into the chamber 1.

  The other structure is the same as that of the embodiment shown in FIG. 1 except that the member to be etched is made of Ni. The embodiment shown in FIG. Same as example.

Similar to the first embodiment, when the film formation on the substrate 3 (see FIG. 1) is continued, the NiCl thin film and the Ni thin film are also deposited on the inner wall of the chamber 1. For this reason, after the member to be etched is retracted by a retracting means (not shown) at a predetermined period, the halogenated gas 12 (for example, BCl ₃ ) is turned into plasma and NiCl _x adhered to the chamber 1 by Cl ^* and B ^*. The deposits on the thin film 46 and the Ni thin film 45 are removed (cleaning).

That is, first, NiCl is converted into solid Ni and gaseous BCl ₃ by the reaction of NiCl _x + B ^* → Ni + BCl ₃ ↑, and BCl ₃ is discharged. Subsequently, the reaction is made Ni + Cl ^* → NiCl _x ↑ into gaseous NiCl _x, and NiCl _x is discharged.

For this reason, even if Ni is a stable metal as the metal chloride, the etching reaction by Cl ^* is facilitated, and both the NiCl thin film that is a metal halide thin film and the Ni thin film that is a metal thin film can be efficiently removed. it can.

  INDUSTRIAL APPLICABILITY The present invention can be used in the industrial field of a thin film manufacturing apparatus for forming a metal component that can efficiently clean a metal component and a halide of the metal component.

  In addition, the present invention can be used in the industrial field of a cleaning method capable of efficiently cleaning a metal component and a halide of the metal component.

1 is a schematic side view of a thin film production apparatus according to a first embodiment of the present invention. It is a schematic side view of the thin film preparation apparatus which concerns on the 2nd Example of this invention. It is a schematic side view of the thin film preparation apparatus which concerns on the 2nd Example of this invention. It is a schematic side view of the thin film preparation apparatus which concerns on the 3rd Example of this invention. It is a schematic side view of the thin film preparation apparatus which concerns on the 4th Embodiment of this invention. It is a schematic side view of the thin film preparation apparatus which concerns on the example of 5th Embodiment of this invention. It is the schematic of the thin film preparation apparatus which concerns on the 6th Embodiment example of this invention. It is sectional drawing of the heater cylinder part of the thin film preparation apparatus concerning the 6th Embodiment of this invention. It is a schematic side view of the thin film preparation apparatus concerning the 7th example of an embodiment of the present invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1, 37 Chamber 2 Support stand 3 Substrate 4 Heater 5 Refrigerant distribution means 6 Temperature control means 7 Ceiling board 8 Plasma antenna 9 Matching device 10, 41 Power supply 11 Member to be etched 12 Halogenated gas 14 Nozzle 15 Flow rate controller 18 Exhaust port 19 Vacuum device 20 Pressure control means 21 Halogen gas (Cl ₂ gas)
23 Gas plasma 24 Precursor 25 Ta thin film 26 TaCl thin film 29 Halogen lamp 30 Gas nozzle 31 Lifting device 32 Lifting drive means 35 Second nozzle 36 Heating coil 38 Heater cylinder 39 Heater coil 40 Induction coil

Claims (9)

A chamber containing a susceptor for holding the substrate, a metal member to be etched, a halogen gas supply means for supplying a halogen gas containing halogen to the inside of the chamber, and plasmaizing the inside of the chamber to generate a halogen gas plasma. Generates and generates halogen radicals, removes deposits with halogen radicals, and plasma generation means that cleans the inside of the chamber, and removes metal deposits by controlling the pressure in the chamber to a predetermined pressure state And a pressure control means for controlling the pressure to a relatively high pressure to remove deposits of the metal halide component,
The thin film is produced by supplying a halogen gas from the halogen gas supply means, etching the member to be etched with halogen radicals generated by the plasma generation means to form a precursor of a metal component and a halogen gas component, A thin film characterized in that the precursor is adsorbed on a substrate and a halogen gas component is reduced by a halogen radical to deposit a metal component on the substrate, and the member to be etched is retracted from the chamber during cleaning. Production device. A chamber containing a susceptor for holding the substrate, a metal member to be etched, a halogen gas supply means for supplying a halogen gas containing halogen to the inside of the chamber, and plasmaizing the inside of the chamber to generate a halogen gas plasma. Generating plasma to generate halogen radicals, and removing the deposits with the halogen radicals to clean the inside of the chamber ;
The susceptor is brought into a state in which the metal component deposits are removed by raising the susceptor and the metal susceptor is removed in a relatively low temperature state by lowering the susceptor. Elevating means,
The thin film is produced by supplying a halogen gas from the halogen gas supply means, etching the member to be etched with halogen radicals generated by the plasma generation means to form a precursor of a metal component and a halogen gas component, It is carried out by adsorbing the precursor to the substrate and reducing the halogen gas component by halogen radicals to deposit the metal component on the substrate,
A thin film manufacturing apparatus, wherein the member to be etched is retracted from the chamber during cleaning. A chamber in which a susceptor for holding a substrate is housed, a metal member to be etched, a halogen gas supply means for supplying a halogen gas containing halogen to the inside of the chamber, and plasmaizing the inside of the chamber to generate halogen gas plasma. Plasma means for generating halogen radicals to generate and cleaning the inside of the chamber by removing deposits with the halogen radicals ;
Cleaning gas supply means for supplying halogen gas from a position away from the wall surface of the chamber, and supply of halogen gas from the halogen gas supply means and the cleaning gas supply means were controlled to suppress the temperature drop of the chamber wall surface by the halogen gas. Control means for making a state,
The thin film is produced by supplying a halogen gas from the halogen gas supply means, etching the member to be etched with halogen radicals generated by the plasma generation means to form a precursor of a metal component and a halogen gas component, A thin film characterized in that the precursor is adsorbed on a substrate and a halogen gas component is reduced by a halogen radical to deposit a metal component on the substrate, and the member to be etched is retracted from the chamber during cleaning. Production device. A chamber containing a susceptor for holding the substrate, a metal member to be etched, a halogen gas supply means for supplying a halogen gas containing halogen to the inside of the chamber, and plasmaizing the inside of the chamber to generate a halogen gas plasma. A plasma generating means for cleaning the inside of the chamber by generating halogen radicals by generating and removing deposits with the halogen radicals, and a temperature distribution applying means for giving a temperature distribution to the wall surface of the chamber,
The thin film is produced by supplying a halogen gas from the halogen gas supply means, etching the member to be etched with halogen radicals generated by the plasma generation means to form a precursor of a metal component and a halogen gas component, A thin film characterized in that the precursor is adsorbed on a substrate and a halogen gas component is reduced by a halogen radical to deposit a metal component on the substrate, and the member to be etched is retracted from the chamber during cleaning. Production device. The thin film manufacturing apparatus according to claim 4,
The thin film manufacturing apparatus, wherein the temperature distribution applying means is provided with a resistance heating means around the chamber. The thin film manufacturing apparatus according to claim 4,
An apparatus for producing a thin film, characterized in that the temperature distribution applying means is provided with induction heating means around the chamber. The thin film manufacturing apparatus according to claim 4,
The thin film manufacturing apparatus, wherein the temperature distribution applying means is provided with a light heating means around the chamber. A chamber in which a susceptor for holding a substrate is housed, a metal member to be etched, a halogen gas supply means for supplying a halogen gas containing halogen to the inside of the chamber, and plasmaizing the inside of the chamber to generate halogen gas plasma. A plasma generating means for generating a halogen radical to remove a deposit by the halogen radical and cleaning the inside of the chamber; and supplying a boron-based or silicon-based gas into the chamber to form a metal halide component. A gas supply means as a metal component,
The thin film is produced by supplying a halogen gas from the halogen gas supply means, etching the member to be etched with halogen radicals generated by the plasma generation means to form a precursor of a metal component and a halogen gas component, It is carried out by adsorbing the precursor to the substrate and reducing the halogen gas component by halogen radicals to deposit the metal component on the substrate,
A thin film manufacturing apparatus, wherein the member to be etched is retracted from the chamber during cleaning.   It is a cleaning method in the thin film preparation apparatus according to any one of claims 1 to 8, wherein the material to be etched is retracted from the chamber, and the deposits of the metal component are removed by halogen radicals, thereby cleaning the inside of the chamber. And cleaning the inside of the chamber by changing the conditions and removing the deposits of the components of the precursor.

Images