JP4435541B2 - CVD apparatus and CVD method - Google Patents

Description

  The present invention relates to an apparatus used for CVD work such as plasma CVD (Chemical Vapor Deposition). The present invention also relates to a CVD method.

  The CVD apparatus and the CVD method of the present invention are suitable for manufacturing a photoelectric conversion device such as a solar battery.

  Solar cells are attracting attention because they can generate electricity using inexhaustible solar energy, are clean without emitting exhaust gas, and are safe without danger of releasing radioactivity. Yes.

  A solar cell is obtained by laminating a semiconductor layer on a glass substrate (base). As a specific example, a solar cell is obtained by laminating a silicon-based p layer, i layer and n layer on a glass substrate. ing.

  In addition, plasma CVD is often used to form these silicon-based semiconductor layers.

  Here, the plasma CVD method refers to a method in which a film formation chamber is decompressed to a high vacuum, a source gas is supplied to the film formation chamber, and then the source gas is decomposed by glow discharge or arc discharge, and the substrate is placed in the film formation chamber This is a technique for forming a thin film.

  An apparatus for performing the plasma CVD method and a specific working method are disclosed in the following patent documents.

  The plasma CVD apparatus disclosed in Patent Documents 1 and 2 includes a process chamber for each process for performing predetermined processing on a substrate such as a chamber for pretreatment such as heating, a chamber for film formation, and a chamber for posttreatment such as cooling. A moving chamber for transporting the substrate is provided.

  In the plasma CVD apparatus disclosed in Patent Documents 1 and 2, as a process chamber, two pretreatment chambers, a number of film formation chambers, and two posttreatment chambers are arranged side by side. A transfer chamber is provided above the row of each process chamber. The moving chamber can be moved to the upper part of an arbitrary process chamber by the transfer means.

  In the plasma CVD apparatus disclosed in Patent Literatures 1 and 2, a partition shutter is provided in the opening for taking in and out the base of each chamber.

  That is, in the process chamber employed in the plasma CVD apparatus described in Patent Documents 1 and 2, openings are provided in and out of the substrate, but a partition shutter is provided in each opening. This partition shutter has airtightness, and the inside of the process chamber can be evacuated by closing the partition shutter and exhausting the air inside.

  Moreover, in the plasma CVD apparatus described in Patent Documents 1 and 2, a similar partition shutter is also provided in the moving chamber.

  In the plasma CVD apparatus described in Patent Literatures 1 and 2, a decompression device is connected to all of the process chamber and the transfer chamber.

  In Patent Document 1, a pressure reducing device is connected to the shutter portion of the moving chamber, and in Patent Document 2, a pressure reducing device is connected to the shutter portion of the process chamber.

  Next, an operation process in the case where film formation is performed using the plasma CVD apparatus described in Patent Documents 1 and 2 will be described.

  When film formation is performed using the plasma CVD apparatus described in Patent Documents 1 and 2, the substrate is first put into the first pretreatment chamber. That is, the partition shutter of the first pretreatment chamber is opened and the substrate is loaded. Subsequently, the partition shutter is closed and the air inside is evacuated to a vacuum state. Subsequently, the substrate is heated by a heater or the like built in the pretreatment chamber.

  In parallel with this operation, in the moving chamber, the partition shutter is closed, the air inside is exhausted, and the vacuum state is maintained.

  When the heating operation of the substrate in the first pretreatment chamber is completed, the transfer chamber is moved directly above the first pretreatment chamber, and the transfer chamber is connected to the first pretreatment chamber. Then, the pressure between the partition shutters is reduced.

  Thereafter, the partition shutter of the transfer chamber and the partition shutter of the first pretreatment chamber are both opened, and the substrate in the first pretreatment chamber is moved to the transfer chamber side.

  When the movement of the substrate is completed, both the partition shutter of the transfer chamber and the partition shutter of the first pretreatment chamber are closed. Then, the transfer chamber is moved to stop the transfer chamber on the adjacent second pretreatment chamber, the transfer chamber is connected to the second pretreatment chamber, the pressure between the partition shutters is reduced, and the transfer chamber is Both the partition shutter and the partition shutter of the second pretreatment chamber are opened to move the substrate in the moving chamber to the second pretreatment chamber.

In this way, the substrate is moved to each process chamber in order using the moving chamber, and a predetermined operation is performed by each process chamber to complete the film forming operation.
Japanese Examined Patent Publication No. 63-12138 Japanese Patent Laid-Open No. 4-329883

  By the way, when manufacturing the photoelectric conversion apparatus used for a solar cell etc. by CVD method, dust and dust are strictly prohibited. For this reason, they are manufactured in a clean room, but even if it is a clean room, there is a slight amount of dust and dirt.

  Further, in the case of the plasma CVD method, a product having a similar component to the thin film is also formed in a portion other than the substrate, but dust may be generated due to the separation of these products.

  Measures are taken to remove these dusts strictly, but there is a risk that these dusts will get caught in the mating surface and seal surface of the partition shutter, and the dust that has entered these parts will be removed. It is extremely difficult.

  On the other hand, in the conventional plasma CVD apparatus, as described above, the partitioning shutter is also provided in the moving chamber. The partition shutter attached to the transfer chamber has a higher opening / closing frequency than the partition shutter of the process chamber, and dust and products are easily caught. Therefore, according to the plasma CVD apparatus of the prior art, dust and products biting into the partition shutter of the moving chamber peel off when the substrate is moved or when the moving chamber is moved, and adhere to the surface of the substrate and have an adverse effect. There was concern to give.

  Further, if dust or products are caught in the partition shutter of the transfer chamber, the sealing performance of the shutter is lowered and the degree of vacuum in the transfer chamber is lowered. Since the transfer chamber is connected to each process chamber, a decrease in the degree of vacuum of the transfer chamber also leads to a decrease in the degree of vacuum in the process chamber.

  When dust or products are caught in the partition shutter of the moving chamber in this way, the degree of vacuum in the moving chamber or the process chamber is lowered, the stable operation of the apparatus is impaired, and there is a concern that the operating rate is lowered. .

  Further, as described above, since the partition shutter attached to the moving chamber is frequently opened and closed, the seal is easily damaged, and periodic maintenance such as replacement of the seal is necessary.

  However, since the partition shutter attached to the moving chamber is large as described above, the maintenance work is not easy.

  In addition, in the conventional plasma CVD apparatus, when the partition shutters of the transfer chamber and the process chamber are opened, the air remaining between the partition shutters is exhausted because it is necessary to maintain the degree of vacuum in both chambers. Although necessary, the piping for this is complicated, making the maintenance of the partition shutter more difficult.

  Moreover, since the partition shutter attached to the moving chamber is required to be large and highly accurate, it is expensive, and there is a problem that the manufacturing cost of the entire apparatus increases.

  Therefore, the present invention pays attention to the above-mentioned problems of the prior art, there is no concern that dust and products remain, a high-quality thin film can be formed, and a CVD apparatus that is low in manufacturing cost and maintenance cost Development is a challenge.

  In addition, another object of the present invention is to provide a CVD method that solves the same problem.

The invention described in claim 1 for solving the above-described problem is a CVD apparatus for forming a thin film on a substrate having a predetermined shape, comprising a plurality of film forming chambers and one or more transfer chambers, The film formation chamber includes a film formation chamber for forming a film on a substrate, and a film formation chamber entrance / exit for taking the substrate into and out of the film formation chamber, and an airtight shutter is provided at the film formation chamber entrance / exit. A film forming chamber side decompression device is connected to the chamber , and the film forming chamber has a film forming function by plasma CVD, and the film forming chamber of the film forming chamber has a plurality of planar heaters and planar electrodes. Are arranged side by side in parallel with a predetermined interval, and the chamber for movement has a storage chamber for storing the base body, and a storage chamber inlet / outlet for inserting / withdrawing the base body into / from the storage chamber. Or airtight Closure member is provided having no, the the storage chamber is connected to the housing chamber side pressure reducing device, each of the substrates housed in the room substrate a possible plurality accommodating the mobile chamber a predetermined distance The film forming chamber is fixed at a fixed position, the moving chamber is movable, and the moving chamber is moved so that the storage chamber is connected to the film forming chamber of the film forming chamber. Airtightly connectable to the entrance and exit, and the space closed by the shutter and the storage chamber is decompressed by the storage chamber-side decompression device with the shutter at the film formation chamber being closed, and then the shutter is opened for movement of transferring the substrate chamber side Ri transferable der the deposition chamber of the film forming chamber, storage chamber of the substrate of the transfer chamber is linearly moved in the surface direction in the film forming chamber of the film forming chamber Each substrate is CVD apparatus characterized by being inserted between the heater and the electrode.

  The moving chamber employed in the present invention has a storage chamber entrance through which a substrate is taken in and out of the storage chamber, but the storage chamber entrance is always open or provided with a blocking member that is not airtight. In addition, there is no partition shutter having airtightness as in the prior art.

  For this reason, there is no problem that dust or a product bites into the seal portion of the shutter, which has been a concern in the prior art.

  In addition, since the moving chamber employed in the present invention does not have a conventional partition shutter having airtightness, the manufacturing cost is low and maintenance is easy.

  Furthermore, in the present invention, the transfer chamber is moved, the storage chamber entrance / exit is hermetically joined to the film formation chamber entrance / exit, and the film formation chamber entrance / exit shutter is closed. Since the space closed by the storage chamber is decompressed, the vacuum state in the deposition chamber is maintained even if the shutter at the entrance and exit of the deposition chamber is opened.

  There may be one transfer chamber or multiple transfer chambers. When multiple transfer chambers are used, even if one transfer chamber fails due to a problem, production will continue without lowering the operating rate. Can do. While one moving chamber is moving, the other moving chambers are preferably kept at a position where they do not interfere.

  In addition, it is possible to ensure higher productivity by setting the number of moving chambers to 2 or more and managing the moving positions sequentially.

An invention relating to a method for solving the same problem is a CVD method for forming a thin film on a substrate having a predetermined shape using a CVD apparatus having a plurality of film forming chambers and one or more transfer chambers. The film formation chamber includes a film formation chamber for forming a film on a substrate, and a film formation chamber inlet / outlet for taking the substrate into and out of the film formation chamber, and an airtight shutter is provided at the film formation chamber inlet / outlet. A film forming chamber-side decompression device is connected to the film chamber, and the moving chamber has a storage chamber for storing the substrate, and a storage chamber inlet / outlet for taking the substrate in and out of the storage chamber , A closing member that is always open or does not have airtightness is provided , a storage chamber-side decompression device is connected to the storage chamber, the film formation chamber is fixed at a fixed position, and the transfer chamber Is movable Yes, with the film forming chamber shutter closed, the transfer chamber is moved, the storage chamber entrance / exit is hermetically bonded to the film forming chamber entrance / exit, and the film forming chamber entrance / exit shutter is closed. The space closed by the shutter and the storage chamber is decompressed by the storage chamber side decompression device, and then the shutter is opened to transfer the substrate on the moving chamber side to the film formation chamber of the film formation chamber. The film forming chamber has a film forming function by plasma CVD, and a plurality of planar heaters and planar electrodes are provided in the film forming chamber of the film forming chamber. The substrates are arranged in parallel and vertically with a predetermined interval, the substrate is flat, a plurality of substrates are stored in the storage chamber of the moving chamber, and each substrate is parallel with a predetermined interval. The substrates in the storage chamber of the moving chamber are linearly moved in the plane direction and transferred to the film forming chamber of the film forming chamber, and each substrate is inserted between a heater and an electrode. This is a CVD method .

  In the CVD method of the present invention, the transfer chamber is moved and its storage chamber entrance / exit is hermetically joined to the film formation chamber entrance / exit of the film formation chamber, and the film formation chamber entrance / exit is closed with the shutter of the film formation chamber entrance / exit closed. Since the space closed by the shutter and the storage chamber is decompressed, the vacuum state in the film forming chamber is maintained even when the shutter at the entrance and exit of the film forming chamber is opened.

The invention described in claim 3 is a CVD method for forming a thin film on a substrate having a predetermined shape using a CVD apparatus including a plurality of film forming chambers and one or more transfer chambers. The chamber includes a film formation chamber for forming a film on the substrate, and a film formation chamber inlet / outlet for taking the substrate into and out of the film formation chamber, and an airtight shutter is provided at the film formation chamber inlet / outlet. A film forming chamber-side decompression device is connected, and the transfer chamber has a storage chamber for storing the substrate, and a storage chamber inlet / outlet for taking the substrate into and out of the storage chamber, and the storage chamber inlet / outlet is always open. Or a blocking member that is not airtight, the film forming chamber is fixed at a fixed position, the moving chamber is movable, and the moving chamber is closed when the shutter of the film forming chamber is closed. The storage chamber entrance hermetically bonded to the film forming chamber entrance of the deposition chamber by moving over, the shutter and the storage chamber by a film forming chamber side pressure reducing device in the state of closing the shutter of the film forming chamber entrance The pressure of the space closed by the pressure chamber is reduced, and then the shutter is opened to transfer the substrate on the moving chamber side to the film forming chamber of the film forming chamber, and a predetermined film is formed on the substrate in the film forming chamber . The film forming chamber has a film forming function by plasma CVD, and a plurality of planar heaters and planar electrodes are arranged in parallel at predetermined intervals in the film forming chamber of the film forming chamber. Is a flat plate, and a plurality of substrates are accommodated in the storage chamber of the transfer chamber, and the substrates are vertically arranged in parallel with a predetermined interval. The substrate in the transfer chamber storage chamber is straight in the plane direction. Move Te is transferred to the deposition chamber of the film forming chamber, each of the substrates is a CVD method, characterized in that inserted between the heater and the electrode.

  In the transfer chamber employed in the CVD method of the present invention, the storage chamber entrance / exit is always provided with a closing member that is always open or does not have airtightness, and has a conventional airtight partition shutter. Since there is no problem, there is no problem that dust and products are caught in the seal part of the shutter.

Even when the shutter at the entrance of the film formation chamber is opened, the vacuum state in the film formation chamber is maintained.
In the present invention, the film forming chamber has a film forming function by plasma CVD, and a plurality of planar heaters and planar electrodes are provided at predetermined intervals in the film forming chamber of the film forming chamber. Are arranged in parallel and vertically, the substrate is in a flat plate shape, a plurality of substrates are accommodated in the storage chamber of the movement chamber, and each substrate is arranged in parallel and arranged in parallel at a predetermined interval. The substrate in the storage chamber is linearly moved in the plane direction and transferred to the film forming chamber of the film forming chamber, and each substrate is inserted between the heater and the electrode.
In the CVD method of the present invention, a plurality of planar heaters and planar electrodes are vertically arranged in parallel at predetermined intervals in the deposition chamber of the deposition chamber. Each base is inserted between the heater and the electrode. Therefore, film formation can be performed simultaneously on a large number of substrates.

  According to a fourth aspect of the present invention, when the film forming process in the film forming chamber is completed or prior to the completion of the film forming process, the transfer chamber is moved so that the storage chamber is formed in the film forming chamber. It is airtightly joined to the chamber entrance and exit, and the space closed by the shutter and the storage chamber is reduced while the shutter of the film formation chamber is closed, and then the shutter is opened to remove the substrate on the film formation chamber side. After moving to the moving chamber side and closing the shutter, air or other gas is introduced into the moving chamber storage chamber to balance the air pressure in the receiving chamber with the external pressure, and the storage chamber entrance / exit of the moving chamber is used as the film forming chamber. 4. The film forming chamber is separated from the entrance and exit of the film forming chamber, the moving chamber is moved, and the substrate after film formation accommodated therein is transported to a predetermined position. It is a CVD method as claimed.

  In the CVD method of the present invention, when the film forming process in the film forming chamber is completed or prior to the completion of the film forming process, the moving chamber is moved and the storage chamber entrance is changed to the film forming chamber entrance / exit of the film forming chamber. Join hermetically. Then, the space closed by the shutter and the storage chamber is decompressed by the storage chamber-side decompression device while the shutter at the entrance / exit of the film forming chamber is closed. Therefore, the vacuum state in the film forming chamber is maintained even when the shutter at the entrance and exit of the film forming chamber is opened.

  In the present invention, the shutter at the film forming chamber entrance / exit is opened, the substrate on the film forming chamber side is transferred to the moving chamber side, and the shutter at the film forming chamber entrance / exit is closed. After that, air or other gas is introduced into the storage chamber of the transfer chamber to balance the atmospheric pressure in the storage chamber with the external pressure, and after that, the storage chamber entrance / exit of the transfer chamber is separated from the film formation chamber entrance / exit of the film formation chamber. The force required to separate the transfer chamber and the film formation chamber is small. In addition, since air or the like is introduced into the storage chamber of the transfer chamber after the shutter at the entrance / exit of the deposition chamber is closed, the vacuum state in the deposition chamber is maintained.

  Further, in the CVD method according to claim 5, the movement chamber is provided with a substrate heating means for heating the substrate stored in the storage chamber, and after the space closed by the shutter and the storage chamber is decompressed, The CVD method according to claim 2, wherein the substrate is heated by the heating means.

  The transfer chamber used in the CVD method of the present invention has a substrate heating means for heating the substrate. For this reason, the transfer chamber used in the CVD method of the present invention has both a substrate transfer function and a heating function, so that a separate pretreatment chamber can be omitted. In the CVD method of the present invention, the substrate is heated after the pressure in the chamber is reduced, so that there is no deterioration in quality. In other words, if the substrate is heated in the atmospheric state, an oxide film is formed on the substrate surface and the quality deteriorates. However, in the CVD method of the present invention, the substrate is heated after decompressing the chamber, so the oxide film is formed on the substrate surface. Therefore, a high-quality thin film can be formed.

  The storage chamber side pressure reducing device is preferably a vacuum pump attached to the moving chamber.

  According to the configuration of the present invention, the moving chamber and the vacuum pump for evacuating the moving chamber move together.

  In general, in order to insert a substrate into a chamber in which a process is performed, a loading chamber is required, and a vacuum pump for evacuating the loading chamber is necessary. Originally, a loading chamber is required for each film forming chamber, and a vacuum pump is required for each loading chamber.

  On the other hand, in the present invention, the moving chamber functions as a common loading chamber. And in this invention, since the storage chamber side pressure reduction apparatus is a vacuum pump attached to the chamber for a movement, one vacuum pump is sufficient.

  Therefore, according to the present invention, the total number of vacuum pumps is small and the equipment cost is small. Also, less time is required for maintenance.

  The film formation chambers are desirably arranged in rows with the film formation chamber entrances and exits oriented in the same direction. In this case, the transfer chamber is arranged with its storage chamber entrance facing the film formation chamber entrance. Further, it is recommended that the moving chamber be movable in the row direction of the film forming chamber and in the direction of approaching or separating from the film forming chamber.

  Employing a configuration in which the film forming chambers are arranged in a row as in the present invention, there is expandability for future expansion. In other words, it is possible to increase the number of deposition chambers by increasing the operating distance of the moving chamber for each number of chambers.

  When the CVD method of the present invention is adopted for the production of a solar cell, flat glass is used as the substrate. Here, when a flat substrate is used as the substrate, a plurality of substrates are accommodated in the storage chamber of the transfer chamber, the substrates are arranged in parallel and vertically, and the substrate in the storage chamber of the transfer chamber is It is desirable that the film is linearly moved in the direction and transferred to the film forming chamber of the film forming chamber.

  In this way, a plurality of substrates are arranged side by side in parallel, moved linearly in the plane direction, and transferred to the film forming chamber of the film forming chamber, whereby a large number of substrates can be simultaneously formed.

The invention described in claim 9 is the CVD method according to any one of claims 2 to 8 , wherein a multilayer film is formed on the substrate in each film forming chamber.

  In the CVD method of the present invention, every time the transfer chamber is connected to the film formation chamber, the pressure reduction and release to the atmosphere are repeated on the transfer chamber side. Therefore, it is desirable that the connection frequency between the transfer chamber and the film formation chamber be as low as possible. Therefore, in the present invention, as described above, multilayer film formation is performed on the substrate in each film formation chamber.

  In the present invention, since a plurality of film forming chambers perform the same production by the same sequence, the film forming chambers can be created with a common specification. Therefore, the manufacturing cost of the film formation chamber can be reduced.

  For example, when a p-layer, an i-layer, and an n-layer are formed on a glass substrate as in the case of manufacturing a solar cell, three film forming chambers are required. By implementing the above, it is possible to reduce the radix of the chamber itself. Furthermore, the number of accessories such as vacuum pumps, gas flow control devices, high-frequency power supplies, high-frequency electrodes, substrate heaters, substrate transport mechanisms, and measurement systems attached to the chamber is also reduced, greatly reducing the overall equipment costs. Can do.

In addition, if the maintenance cycle of each film forming chamber is made the same and the maintenance timing is shifted for each film forming chamber, the other chambers that are performing maintenance can perform production activities. Therefore, the maintenance rate does not decrease due to maintenance. Furthermore, maintenance can be performed by a small number of people, and maintenance time required for one time can be shortened.
According to a tenth aspect of the present invention, there is provided a CVD apparatus for forming a thin film on a substrate having a predetermined shape, comprising a plurality of deposition chambers and one or more transfer chambers, wherein the deposition chamber is formed on the substrate. A film forming chamber for forming a film; and a film forming chamber inlet / outlet for taking a substrate into and out of the film forming chamber, and an airtight shutter is provided at the film forming chamber inlet / outlet; An apparatus is connected, and the film forming chamber has a film forming function by plasma CVD, and a plurality of planar heaters and planar electrodes are arranged in parallel at predetermined intervals in the film forming chamber of the film forming chamber. The moving chamber has a storage chamber for storing the base body, and a storage chamber inlet / outlet for inserting / removing the base body into / from the storage chamber. The storage chamber inlet / outlet is always open or airtight. Not provided with a closing member A plurality of substrates can be stored in the storage chamber of the transfer chamber, the substrates are arranged in parallel with a predetermined interval, and the film formation chamber is fixed at a fixed position. The chamber can be moved, the moving chamber can be moved and the storage chamber inlet / outlet can be hermetically joined to the film forming chamber inlet / outlet of the film forming chamber, and the film forming chamber can be closed with the shutter of the film forming chamber being closed. The space closed by the shutter and the storage chamber is decompressed by the side decompression device, and then the shutter is opened to transfer the transfer chamber side substrate to the film formation chamber of the film formation chamber. The indoor substrate is linearly moved in the plane direction and transferred to the film formation chamber of the film formation chamber, and each substrate is inserted between a heater and an electrode.

  The CVD apparatus of the present invention is less likely to cause dust and products to adhere to the substrate, and is effective in forming a high-quality thin film. In addition, the CVD apparatus of the present invention can prevent a decrease in sealing performance due to dust and product biting, and can keep the vacuum density of the apparatus high. Therefore, there is an effect that the apparatus can be stably operated, and the operation rate of the apparatus is high. Furthermore, the CVD apparatus of the present invention has an effect that the manufacturing cost and the maintenance cost are low.

  The same applies to the CVD method of the present invention, which has the effect of forming a high-quality thin film, and the device has the effect of low manufacturing and maintenance costs.

  Embodiments of the present invention will be further described below.

  FIG. 1 is an overall perspective view of a CVD apparatus according to an embodiment of the present invention as viewed from the movement chamber 5 side. FIG. 2 is a perspective view of the moving chamber 5 and the chamber moving device 12 employed in the CVD apparatus according to the embodiment of the present invention as viewed from the storage chamber entrance / exit 16 side. FIG. 3 is a conceptual diagram for explaining the layout and schematic operation of the CVD apparatus according to the embodiment of the present invention. FIG. 4 is a perspective view of the main part of the substrate moving device equipped in the substrate receiving / dispensing device 2, the film forming chamber 15, and the moving chamber 5.

  In FIG. 1, reference numeral 1 denotes a CVD apparatus according to an embodiment of the present invention. The CVD apparatus 1 of this embodiment forms a semiconductor layer on a glass base 46. The CVD apparatus 1 of the present embodiment is roughly composed of a substrate receiving / dispensing apparatus 2, a film forming chamber group 3, a moving chamber 5 and a chamber moving apparatus 32.

  To explain sequentially, the substrate receiving / dispensing device 2 is such that five substrate moving devices 8 are provided on the base member 4 as shown in FIG.

  Each substrate moving device 8 has a structure as shown in FIG. 4, for example. That is, in the substrate moving device 8, two low-profile ribs 10 extend in parallel, and a guide groove 11 is formed between them. A plurality of pinion gears 12 are provided in the guide groove 11 at regular intervals. The pinion gear 12 is rotated by power (not shown).

  The film forming chambers 15 constituting the film forming chamber group 3 all have the same structure. FIG. 5 is a perspective view showing the internal structure of the film forming chamber 15. 6 to 8 are perspective views showing examples of shutters provided at the film formation chamber entrance 16 of the film formation chamber 15. FIG. 9 is a partially broken plan sectional view showing the internal structure of the film forming chamber 15. FIG. 10 is a cross-sectional perspective view of the electrode 25 built in the film forming chamber 15.

  As shown in FIGS. 1 and 5, the outer shape of the film forming chamber 15 is a box shape in which the top surface, the bottom surface, the left and right side surfaces, and the back surface are surrounded, and a rectangular film forming chamber entrance 16 is provided on the front surface. It has been. A flange 17 is provided at the opening end of the film forming chamber entrance 16.

  The flange 17 is similar to the film forming chamber entrance / exit 16 and has a rectangular shape, but holes 20 are provided in two opposite corners of the four corners.

  An airtight shutter 18 is provided at the film forming chamber entrance 16.

  The shutter 18 employs what is called a slide-type gate valve, and the door-like member 14 slides in the direction of the arrow as shown by the arrow in FIG.

  The structure of the shutter 18 is not limited, and a butterfly valve type shutter or the like can be adopted in addition to a gate valve type shutter.

  That is, the airtight shutter 18 provided at the film forming chamber entrance / exit 16 is of a type in which a plate body 19 as shown in FIG. There are known types that have a hinge-like part and open and close like a wing, or those in which a large number of plate-like members 21 rotate as shown in FIG.

  The inside of the film forming chamber 15 is a film forming chamber 22 for forming a film on the substrate 46 by plasma CVD as shown in FIG. 5 and 9, six heaters 23a, b, c, d, e, and f and five electrodes 25a, b, c, d, and e are provided. . That is, the heater 23 is illustrated as a thin rectangle in FIGS. 5 and 9, and the electrode 25 is illustrated as a thick rectangle.

  The heaters 23a, b, c, d, e, and f are all plate-like surface heaters, but their internal structure is the same as that used in known plasma CVD, for example, inside the plate body. It is possible to employ one in which a sheathed heater is embedded, a plate-like ceramic heater, or a halogen lamp arranged in a planar shape.

  Of the six heaters 23a, b, c, d, e, and f, the heaters 23a and 23f at both ends are attached to the inner walls 24a and 24b on the side surfaces of the film forming chamber 22. The other heaters 23b, c, d are placed vertically in parallel in the film forming chamber 22 with a predetermined interval.

  On the other hand, the electrodes 25a, b, c, d, e are obtained by attaching shower plates 27 on both sides of the frame 26 as shown in FIG.

  A gas pipe 31 is connected to the frame body 26 and connected to a source gas supply source (not shown). The frame body 26 is connected to a high-frequency AC power source through a matching circuit (MBX).

The electrodes 25a, b, c, d and e are vertically placed in parallel between the six heaters 23a, b, c, d, e and f. In the present embodiment, each of the electrodes 25a, b, c, d, e is suspended vertically from the top surface of the film forming chamber 22, and the bottom surface of the film forming chamber 22 and each electrode 25a, b are disposed. , C, d, e are gaps.

  As described above, the electrodes 25a, b, c, d, and e are vertically arranged between the six heaters 23a, b, c, d, e, and f. As shown in FIG. 3, the heater 23a on the side surface, the electrode 25a, the heater 23b, the electrode 25b, the heater 23c, the electrode 25c, the heater 23d, the electrode 25d, the heater 23e, the electrode 25e, and the heater 23f on the opposite side surface are erected in parallel. It is in a state.

  A substrate moving device 29 similar to the substrate receiving / dispensing device 2 described above is provided inside the film forming chamber 22 (see FIG. 5 and other drawings are not shown). The number of the substrate moving devices 29 is the same as that of the substrate receiving / dispensing device 2 described above, and the interval is the same as that of the substrate receiving / dispensing device 2.

  Inside the film forming chamber 22, the electrodes 25 a to 25 e are positioned in the guide groove 11 of each substrate moving device 8 as shown in FIG. 5.

  As shown in FIG. 5, a vacuum pump (deposition chamber side pressure reducing device) 34 is connected to the film forming chamber 22 via a valve 33.

  Next, the moving chamber 5 and the chamber moving device 32 will be described.

  FIG. 11 is a perspective view showing the inside of the moving chamber 5. FIG. 12 is a cross-sectional view of the chamber moving device 32. FIG. 13 is a plan sectional view showing the internal structure of the transfer chamber 5.

  As shown in FIG. 2, the moving chamber 5 has a box shape in which the top surface, the bottom surface, the left and right side surfaces, and the back surface are surrounded, and a rectangular storage chamber entrance 35 is provided on the front surface. A flange 37 is provided at the open end of the storage chamber entrance 35.

  The size and shape of the storage chamber entrance / exit 35 and the flange 37 are equal to the film formation chamber entrance / exit 16 and the flange 17 of the film formation chamber 15 described above.

  However, in the flange 17 of the film forming chamber 15, the holes 20 are provided in two opposite corners of the four corners. However, in the flange 37 of the moving chamber 5, the pins 40 are provided in corresponding positions. Yes. The pin 40 is tapered.

  An O-ring 41 is attached to the flange 37.

  The cross-sectional shape of the O-ring 41 is an isosceles trapezoid as shown in FIG. The section of the groove 42 in which the O-ring 41 is mounted is also trapezoidal, and the O-ring 41 has a short side protruding from the groove 42. The cross-sectional shape of the O-ring 41 is recommended to be a trapezoidal shape, but may be another polygon such as a square or a normal circular cross-section.

  The storage chamber entrance / exit 35 of the moving chamber 5 has no member to shield it, and the storage chamber entrance / exit 35 is always open.

  The interior of the moving chamber 5 is a storage chamber 47 for storing the base body 46 as shown in FIG.

A substrate moving device 49 (see FIGS. 2 and 13) is provided inside the storage chamber 47 in the same manner as the substrate receiving / dispensing device 2 and the film forming chamber 22 described above. The number of the substrate moving devices 49 is the same as that of the substrate receiving / dispensing device 2 and the film forming chamber 22 described above, and the interval is the same as that of the substrate receiving / dispensing device 2 and the like.

  In the storage chamber 47 of the moving chamber 5, six heaters 43a, b, c, d, e, and f are provided. The structure of the six heaters 43 a, b, c, d, e, and f includes six heaters 23 a, b, c, d, e, and f arranged in the film forming chamber 22 of the film forming chamber 15 described above. It is the same. The six heaters 23a, b, c, d disposed in the film forming chamber 22 of the film forming chamber 15 are also related to the positional relationship between the six heaters 43a, b, c, d, e, f in the transfer chamber 5. , E, f.

  The moving chamber 5 employed in the present embodiment does not have a shutter that is conventionally required. For this reason, dust cannot be caught in the shutter, which is a concern in the prior art.

  Further, the moving chamber 5 employed in the present embodiment has a low manufacturing cost because there is no shutter that has been essential in the past.

  The chamber moving device 32 moves the moving chamber 5 in the row direction and in the front-rear direction, and the movement in the row direction is performed along the rail 50 as shown in FIGS. Is performed along the straight guide 51.

  That is, the chamber moving device 32 has a pair of rails 50 extending in the row direction. The rail 50 has the same cross-sectional shape as a known train rail. The rail 50 is connected to a sleeper 54 provided on the floor surface by a known tie plate or the like.

  A long rack 52 is attached between the rails 50 with the tooth surfaces facing in the lateral direction as shown in FIGS.

  A stopper 53 is attached to the end of the rail 50 as shown in FIG. The stopper 53 prevents the mobile carriage 55 described later from running away and incorporates a known shock absorber.

  A moving carriage 55 is placed on the rail 50 as shown in FIGS. The movable carriage 55 has four wheels 61 provided on the lower surface of the base plate 60. In the present embodiment, the wheel 61 allows free rotation, and the wheel 61 is placed on the rail 50.

  A part of the base plate 60 has an overhang 62, and an electric motor 63 that rotates at a low speed, such as a geared motor, is provided. The electric motor 63 is attached with a rotating shaft (not shown) protruding from the lower surface side of the base plate 60, and a pinion gear 65 is attached to the rotating shaft. The pinion gear 65 is engaged with a rack 52 provided between the rails 50.

  Therefore, when the electric motor 63 is rotated, the pinion gear 65 is rotated, and the moving carriage 55 is self-propelled by the reaction force received from the rack 52. In this embodiment, the vacuum pump 44 is mounted on the moving carriage 55 as will be described later. Generally, since the vacuum pump 44 is weak against vibration, the moving carriage 55 is designed so that there is no sudden acceleration or deceleration. Should. As one guideline, the acceleration of the moving carriage 55 is desirably 0.25 m / sec or less. The more recommended acceleration limit is 0.15 m / sec. The steady speed is desirably 0.5 m / sec or less (preferably 0.35 m / sec) or less.

  The linear guide 51 described above is provided on the upper surface of the base plate 60 of the movable carriage 55. The straight guides 51 are provided in two parallel rows, and the direction thereof is perpendicular to the rail 50 on the floor surface.

  A moving plate 67 is provided on the linear guide 51 described above. The moving chamber 5 is fixed to a moving plate 67 as shown in FIGS.

A moving side bracket 68 (see FIGS. 2 and 12) is provided at the center of the side of the moving plate 67 on the front side (the storage chamber entrance / exit 35 side). The moving bracket 68 is a plate that protrudes from the lower surface of the moving plate 67.

  On the other hand, a fixed-side bracket portion 70 is provided on the upper surface side of the base plate 60 as shown in FIG. A hydraulic or pneumatic cylinder 71 is attached between the fixed bracket portion 70 and the movable bracket portion 68 described above. Therefore, when the rod of the cylinder 71 is expanded and contracted, the moving plate 67 on the base plate 60 linearly moves in a direction perpendicular to the rail 50 along the linear guide 51, and the moving chamber 5 placed on the moving plate 67 moves in the front-rear direction. It moves linearly in the direction of approaching / separating from the film forming chamber 15.

  The moving plate 67 is mounted with a vacuum pump 44 (not shown in FIGS. 3 and 11; not shown in FIGS. 1 and 2 for convenience of drawing). The vacuum pump 44 functions as a storage chamber side pressure reducing device and is connected to the storage chamber 47 of the moving chamber 5 as shown in FIGS.

  Next, the base carrier 72 that carries the base 46 will be described. FIG. 14 is a perspective view of the substrate carrier 72 used in the embodiment of the present invention. FIG. 15 is an exploded perspective view of the base carrier 72 of FIG.

  The base carrier 72 has such a shape that two frame bodies 77 are erected on an elongated carriage. That is, the base carrier 72 has a rectangular parallelepiped carrier base 73, and a total of eight wheels 75 are provided on both sides thereof. A rack 76 is attached to the bottom surface of the carrier base 73.

  Two frame bodies 77 are provided on the long side portion on the upper surface side of the carrier base 73 so as to face each other in parallel. There is a gap 74 between the frames 77. That is, the carrier base 73 and the two frames 77 form an upward “U” shape.

  As shown in FIGS. 14 and 15, the frame body 77 is provided with two square openings 78, and a number of clips 80 are provided around the openings 78.

  As shown in FIG. 15, a glass substrate as the base 46 is attached to the frame body 77 of the base carrier 72, and the clip 80 holds the two together.

  Therefore, the exposed surface of the glass substrate serving as the base 46 faces the inside of the opposing frame body 77.

  Next, the overall layout of the CVD apparatus of this embodiment will be described.

In the CVD apparatus of this embodiment, as shown in FIGS. 1 and 3, all of the four film forming chambers 15 constituting the film forming chamber group 3 are arranged in a row with the film forming chamber inlet / outlet 16 directed in the same direction. Has been placed. The substrate receiving / dispensing device 2 is in a position aligned with the film forming chamber group 3.

  The four film forming chambers 15 and the substrate receiving / dispensing apparatus 2 constituting the film forming chamber group 3 are all firmly fixed to the floor surface and do not move.

As shown in FIGS. 1 and 2, the rail 50 of the chamber moving device 32 is installed along the front side of the film forming chamber group 3 and the substrate receiving / dispensing device 2. The moving chamber 5 is placed on the rail 50. The storage chamber entrance / exit 35 of the transfer chamber 5 faces the direction facing the film formation chamber entrance / exit 16 of the film formation chamber 15.

  In this embodiment, when the electric motor 63 of the chamber moving device 32 is rotated, the moving carriage 55 is self-propelled, and the moving chamber 5 moves in the column direction of the film forming chamber group 3.

  Further, when the cylinder 71 of the chamber moving device 32 is expanded and contracted, the moving chamber 5 moves in the approaching / separating direction with respect to the film forming chamber 15.

  Next, a CVD method using the CVD apparatus of this embodiment will be described.

  FIG. 16 is an external perspective view showing a state where the transfer chamber 5 and the film forming chamber 15 are joined. FIG. 17 is a partially broken perspective view of the moving chamber 5 and the film forming chamber 15 showing a state in which the substrate carrier 72 moves from the moving chamber 5 to the film forming chamber 15. FIG. 18 is a cross-sectional view showing a joined state of the flanges of the transfer chamber 5 and the film forming chamber 15. FIG. 19 is a plan sectional view of the transfer chamber 5 and the film formation chamber 15 showing a state in which the substrate carrier 72 moves from the transfer chamber 5 to the film formation chamber 15.

  As a preparatory stage of the CVD method of the present embodiment, the pressure in the film forming chambers 22 of the four film forming chambers 15 constituting the film forming chamber group 3 is reduced. Specifically, the shutter 18 of the film forming chamber entrance / exit 16 is closed, the vacuum pump (film forming chamber side pressure reducing device) 34 is started, and the valve 33 is opened to exhaust the air in the film forming chamber 22. The base 46 is attached to the base carrier 72.

  In the CVD method of this embodiment, first, the substrate carrier 72 is set in the substrate receiving / dispensing apparatus 2. Specifically, the substrate carrier 72 is placed on the substrate receiving / dispensing device 2, and the wheel 75 of the substrate carrier 72 is fitted between the guide grooves 11 of the substrate moving device 8 of the substrate receiving / dispensing device 2. At this time, the rack 76 provided on the bottom surface of the substrate carrier 72 is engaged with the pinion gear 12 of the substrate moving device 8 provided in the substrate receiving / dispensing device 2.

  The following series of work steps are automatically performed by a control device (not shown).

  That is, the substrate receiving / dispensing device 2, the transfer chamber 5, and the film forming chamber group 3 are organically operated by a control device (not shown) to form a silicon-based p layer, i layer, and n layer on the substrate 46.

  More specifically, when the substrate carrier 72 is placed on the substrate receiving / dispensing device 2, the moving chamber 5 moves to the position of the substrate receiving / dispensing device 2. That is, the electric motor 63 of the chamber moving device 32 rotates, the moving carriage 55 self-runs on the rail 50, and the moving chamber 5 moves in the column direction of the film forming chamber group 3 to move in front of the substrate receiving / dispensing device 2. Stop at. Positioning is performed by providing a measure for counting the number of rotations of the electric motor 63 or a known limit switch.

  Then, the pinion gear 12 of the substrate moving device 8 provided in the substrate receiving / dispensing device 2 and the pinion gear 12 of the substrate moving device 49 of the moving chamber 5 rotate. Here, since the rack 76 provided on the bottom surface of the substrate carrier 72 is engaged with the pinion gear 12 of the substrate moving device 8 provided in the substrate receiving / dispensing device 2, the rack 76 is provided in the substrate receiving / dispensing device 2. When the pinion gear 12 is rotated, the base carrier 72 moves forward and moves to the moving chamber 5 side. Here, in the transfer chamber 5 employed in the present embodiment, there is no member that blocks the opening at the storage chamber entrance / exit 35 of the transfer chamber 5 and the storage chamber entrance / exit 35 is always open. The moved base carrier 72 enters the moving chamber 5 side. Further, since the moving chamber 5 employed in the present embodiment does not have a shutter that has been indispensable in the past, there is no concern that dust or the like caught in the shutter will fall to the base 46 side.

  As described above, since the pinion gear 12 of the substrate moving device 49 of the transfer chamber 5 is also rotating, the rack 76 of the substrate carrier 72 is engaged with the pinion gear 12 on the transfer chamber 5 side, and the substrate carrier 72 is drawn into the storage chamber 47 of the moving chamber 5.

  In the present embodiment, the substrate receiving / dispensing device 2 is provided with five rows of substrate moving devices 8, and five substrate carriers 72 are set in the substrate receiving / dispensing device 2. The number and interval of the substrate moving devices 8 provided on the substrate 5 are the same as the number and interval of the substrate moving devices 49 on the moving chamber 5 side, so that five substrates are set in the substrate receiving / dispensing device 2. All the carriers 72 move to the moving chamber 5 side and are stored in the storage chamber 47.

  The five substrate carriers 72 may be moved at a time or sequentially. The movement of the substrate carrier 72 from the transfer chamber 5 to the film forming chamber, the movement of the substrate carrier 72 from the film forming chamber to the transfer chamber 5, and the substrate carrier from the moving chamber 5 to the substrate receiving / dispensing device 2 described later. The same applies to the movement of 72, and may be performed all at once or individually.

  When the five substrate carriers 72 set in the substrate receiving / dispensing device 2 are all moved to the moving chamber 5 side and the substrate carrier 72 is not present on the substrate receiving / dispensing device 2, the substrate carrier 72 is received again. -Replenish the dispensing device 2. This replenishment work is often performed manually by the operator.

When it is confirmed that all the substrate carriers 72 have moved to the moving chamber 5 side, the moving chamber 5 moves again in the row direction and stops in front of the film forming chamber 15 at the adjacent position.

  Subsequently, the cylinder 71 of the moving chamber 5 is extended, and the moving chamber moves in a direction approaching the film forming chamber 15.

  Finally, the tip of the moving chamber 5 comes into contact with the tip of the film forming chamber 15 as shown in FIGS.

  That is, the storage chamber entrance / exit 35 of the transfer chamber 5 matches the film forming chamber entrance / exit 16 of the film forming chamber 15, and the flange 37 of the transfer chamber 5 matches the flange 17 of the film forming chamber 15. The flange 37 presses the flange 17 of the film forming chamber 15.

  In the present embodiment, the two holes 20 are provided in the flange 17 of the film forming chamber 15, and the pin 40 is provided at a position corresponding to the flange 37 of the moving chamber 5. Is in contact with the tip of the film forming chamber 15, the pin 40 on the moving chamber 5 side enters the hole 20 on the film forming chamber 15 side to correct the displacement of the flanges 17 and 37.

  Since the O-ring 41 is mounted on the flange 37 of the moving chamber 5 as described above, the flange 17 and the flange 37 are joined in a state where airtightness is ensured. In particular, in this embodiment, since the cross-sectional shape of the O-ring 41 is trapezoidal, the contact area between the tip of the O-ring 41 and the flange 37 on the film forming chamber 15 side is large as shown in FIG. . In addition, airtightness is ensured even if some foreign matter is mixed.

  As described above, since the film-forming chamber entrance / exit 16 of the film-forming chamber 15 is provided with a shutter 18 having airtightness, in the transfer chamber 5, as shown in FIG. A closed space 85 surrounded by the shutter 18 of the film forming chamber 15 is formed.

  When it is confirmed that the flange 37 of the transfer chamber 5 and the flange 17 of the film forming chamber 15 are completely connected, the vacuum pump (storage chamber side pressure reducing device) 44 is activated and the valve 49 is opened to store the above-described storage. Air is exhausted from a closed space 85 surrounded by the chamber 47 and the shutter 18 of the film forming chamber 15, and the pressure is reduced to a vacuum.

  When the enclosed space reaches a predetermined degree of vacuum, the six heaters 43a, b, c, d, e, and f provided in the storage chamber 47 of the moving chamber 5 are heated to increase the internal substrate. 46 is heated and heated. Here, in the CVD method of this embodiment, since the substrate is heated after the inside of the chamber is decompressed, an oxide film cannot be formed on the substrate surface, and a high-quality thin film can be formed.

  When it is confirmed that the substrate 46 has reached a predetermined temperature, the shutter 18 of the film forming chamber 15 is opened. Here, the film forming chamber 22 of the film forming chamber 15 is in a high vacuum state first, but as described above, air is released from the closed space 85 surrounded by the storage chamber 47 and the shutter 18 of the film forming chamber 15. Thus, the degree of vacuum in the film forming chamber 22 is maintained even when the shutter 18 of the film forming chamber 15 is opened.

  When it is confirmed that the shutter 18 is completely opened, the pinion gear 12 of the substrate moving device 49 on the moving chamber 5 side and the substrate moving device 29 provided in the film forming chamber 22 of the film forming chamber 15 are connected. The pinion gear 12 is rotated. The rotation direction of the pinion gear 12 this time is opposite to the case where the substrate carrier 72 is moved to the moving chamber 5 side.

As described above, since the rack 76 provided on the bottom surface of the substrate carrier 72 is engaged with the pinion gear 12 of the substrate moving device 49 provided on the moving chamber 5 side, the rack 76 is provided on the moving chamber 5 side. When the pinion gear 12 is rotated, the base carrier 72 advances toward the storage chamber entrance / exit 35. That is, the substrate carrier 72 proceeds from the moving chamber 5 side to the film forming chamber 22 side of the film forming chamber 15 and enters the film forming chamber 22 of the film forming chamber 15. As described above, since the pinion gear 12 of the substrate moving device 29 on the film forming chamber 15 side is also rotating, the rack 76 of the substrate carrier 72 is engaged with the pinion gear 12 on the film forming chamber 15 side, thereby The carrier 72 is drawn into the film forming chamber 22 of the film forming chamber 15.

  Even when the substrate carrier 72 is put into the film forming chamber 22 of the film forming chamber 15, the moving chamber 5 employed in the present embodiment does not have a shutter, which has been indispensable in the prior art. There is no concern of falling to the 46 side.

  As shown in FIG. 9, the film forming chamber 22 is a film forming chamber 22 for forming a film on a substrate by plasma CVD, and includes six heaters 23a, b, c, d, e, and f. Electrodes 25a, b, c, d and e are provided. Inside the film forming chamber 22, the electrode 25 e is positioned in the guide groove 11 of each substrate moving device 8. As described above, the electrodes 25a, b, c, d, and e are suspended vertically from the top surface of the film forming chamber 22, and the bottom surface of the film forming chamber 22 and the electrodes 25a, b, c, d, and e. There is a gap between them.

  Since the rack 76 of the substrate carrier 72 is engaged with the pinion gear 12 on the film forming chamber 15 side, the substrate carrier 72 is drawn into the film forming chamber 22 of the film forming chamber 15, and the wheel of the substrate carrier 72 is moved in the guide groove. 11, the rectangular carrier base 73 of the base carrier 72 is provided below the electrodes 25a, b, c, d, e as shown in FIG. The frame 77 of the base carrier 72 enters both sides of each electrode 25a, b, c, d, e.

  Further, there are six heaters 23a, b, c, d, e, and f inside the film forming chamber 22, and the electrodes 25a, b, c, d, and the heaters 23a, b, c, d, e, and f, respectively. Since f is arranged alternately, each base 46 is inserted between the heater 23 and the electrode 25.

  That is, a plurality of bases 46 are stored in the storage chamber 47 of the transfer chamber 5, and the bases 46 are arranged vertically in parallel with a predetermined interval. However, the bases in the storage chamber 47 of the transfer chamber 5 are arranged. 46 moves linearly in the surface direction and is transferred to the film forming chamber 22 of the film forming chamber 15, and each substrate 46 is inserted between the heater 23 and the electrode 25.

  When it is confirmed that all of the substrate carriers 72 are moved into the film forming chamber 22 of the film forming chamber 15 and are respectively disposed at predetermined positions, the shutter 18 of the film forming chamber 15 is closed. Then, a silicon semiconductor is formed on the base 46 of the base carrier 72 in the film forming chamber 22 of the film forming chamber 15.

  That is, a source gas is supplied into the frame 26 of the electrodes 25a, b, c, d, e and a high-frequency alternating current is applied to the electrodes 25a, b, c, d, e, so that the electrodes 25a, b, c, d, e A glow discharge is generated between the substrate carrier 72 and the source gas is decomposed to form a thin film on the surface of the substrate 46 placed vertically.

  In this embodiment, each thin film layer constituting the solar cell is formed in the film forming chamber 22 of one film forming chamber 15. That is, the solar cell is formed by stacking the p-layer, i-layer and n-layer semiconductor layers. In this embodiment, the p-layer and i-layer are formed in the film-forming chamber 22 of one film-forming chamber 15. And n semiconductor layers are sequentially stacked.

  Further, while the film forming process is being performed in the film forming chamber 15, the base carrier 72 is discharged to be emptied and the atmosphere is introduced into the moving chamber 5 in a reduced pressure state, and the pressure in the storage chamber 47 is reduced to the external pressure. And equilibrate.

  When the pressure difference between the inside of the storage chamber 47 and the outside air is eliminated, the cylinder 71 of the chamber moving device 32 is contracted, and the moving chamber 5 is moved away from the film forming chamber 15. In other words, the transfer chamber 5, which has been joined, is separated from the film formation chamber 15. In the present embodiment, the transfer chamber 5 is separated from the film forming chamber 15 after the storage chamber 47 is opened to the atmosphere, so that no atmospheric pressure is applied to the transfer chamber 5 and the transfer chamber 5 is easily moved. is there.

  Then, the electric motor 63 of the moving chamber 5 is rotated again, the moving carriage 55 of the moving chamber 5 is self-propelled along the rail 50 and moved in the row direction of the film forming chamber, and in front of the substrate receiving / dispensing device 2. Stop again.

  Thereafter, the substrate carrier 72 set in the substrate receiving / dispensing apparatus 2 is moved to the storage chamber of the moving chamber 5 as in the previous step, and the moving carriage 55 of the moving chamber 5 is self-propelled along the rail 50. Then, it stops in front of the second film forming chamber 15, and the cylinder 71 is extended to move the moving chamber 5 forward so that the tip of the moving chamber 5 is brought into contact with the tip of the film forming chamber 15. The storage chamber entrance / exit 35 of the transfer chamber 5 matches the film formation chamber entrance / exit 16 of the film formation chamber 15, and the transfer chamber 5 in a state where the flange 37 of the transfer chamber 5 matches the flange 17 of the film formation chamber 15. The flange 37 of 5 is pressed against the flange 17 of the film forming chamber 15.

  Thereafter, the closed space 85 surrounded by the storage chamber 47 and the shutter 18 of the film forming chamber 15 is decompressed by the vacuum pump 44, and the internal substrate 46 is heated and heated by the heaters 43a, b, c, d, e, and f. Warm up.

  Thereafter, the shutter 18 of the film forming chamber 15 is opened, the substrate carrier 72 in the moving chamber 5 is moved to the film forming chamber 22 of the film forming chamber 15, and the shutter 18 is closed to perform film formation.

  In this way, the base body 46 is inserted into the four film forming chambers 15 one after another, and the p-layer, i-layer, and n-layer semiconductor layers are stacked in each film-forming chamber 15.

  Then, the substrate carrier 72 is sequentially carried out from the film forming chamber 15 where the lamination process is completed, and returned to the substrate receiving / dispensing apparatus 2.

  In the present embodiment, the moving chamber 5 is also used for this return operation.

  In other words, if there are four film forming chambers 15 in which all the film forming operations have been completed, or if there is one in which the film forming operation has reached the final stage, the moving chamber 5 is not built in and the empty space is not provided. The moving chamber 5 in the state is connected to the film forming chamber 15. That is, the moving carriage 55 of the moving chamber 5 is self-propelled along the rail 50 to stop in front of the film forming chamber 15 where the film forming operation is completed, and the moving chamber 5 is moved forward so that the tip of the moving chamber 5 is moved. The flange 37 of the transfer chamber 5 is pressed against the flange 17 of the film forming chamber 15 while being brought into contact with the tip of the film forming chamber 15.

  Thereafter, the closed space 85 surrounded by the storage chamber 47 and the shutter 18 of the film forming chamber 15 is decompressed by the vacuum pump 44.

  Then, the shutter 18 is opened, and the substrate 46 after film formation is moved from the film formation chamber 15 side to the movement chamber 5 side. That is, the pinion gear 12 of the substrate moving device 8 of the film forming chamber 15 and the moving chamber 5 is rotated in the opposite direction to the previous case, and the substrate carrier 72 is moved to the film forming chamber entrance / exit 16 side of the film forming chamber 15. The base carrier 72 is drawn into the storage chamber 47 side of the moving chamber 5.

  When it is confirmed that all the substrate carriers 72 have moved to the moving chamber 5 side, the shutter 18 is closed and the atmosphere is introduced into the moving chamber 5.

  When the pressure difference between the inside of the storage chamber 47 and the outside air is eliminated, the cylinder 71 of the moving chamber 5 is contracted, the moving chamber 5 is moved away from the film forming chamber 15, and the moving chamber 5 is moved to the film forming chamber 15. Separate from. Then, the electric motor 63 of the chamber moving device 32 is rotated again, and the moving carriage 55 is moved along the rail 50 to move in the row direction of the film forming chamber 5, and is stopped again in front of the substrate receiving / dispensing device 2.

  Then, the substrate moving device 8 in the moving chamber 5 and the pinion gear 12 of the substrate moving device 8 of the substrate receiving / dispensing device 2 are rotated to move the substrate carrier in the moving chamber 5 to the substrate receiving / dispensing device 2 side. Let

  Thereafter, this process is repeated, and an operation of laminating a thin film on the base 46 is performed.

  The solar cell formed and manufactured in this way has few defects due to dust and the like and has a high yield. The membrane is homogeneous and has high performance.

  In the CVD apparatus of this embodiment, the film forming chambers 15 are arranged in a row as described above, and the rail 50 of the chamber moving device 32 is laid in front of the film forming chamber 15. Adopting a configuration in which the film formation chambers 15 are arranged in a row as in the present embodiment is recommended because of its expandability for future expansion. That is, it is possible to increase the production capacity by arranging the new film forming chambers 15 side by side and extending the rails 50 in accordance with this.

  In the embodiment described above, the configuration in which the p-layer, i-layer, and n-layer semiconductor layers are sequentially stacked in the film-forming chamber 22 of one film-forming chamber 15 has been disclosed. It is not limited to the measures, and each layer may be formed using a plurality of film forming chambers 15.

  However, according to a measure for forming each layer using a plurality of film forming chambers 15, the frequency of connecting the transfer chamber 5 to each film forming chamber 15 increases. In the present invention, it is necessary to depressurize the storage chamber of the transfer chamber 5 each time the transfer chamber 5 is connected to each film forming chamber 15, and this process takes time. For this reason, there is a concern that the time required for a series of film forming steps may be increased in the method of forming each layer using the plurality of film forming chambers 15.

  In the embodiment described above, the substrate is set and dispensed by the single substrate receiving / dispensing device 2, but a device dedicated to receiving and a device dedicated to dispensing may be provided separately.

  In the embodiment described above, the moving chamber includes a self-propelled moving carriage, and the moving chamber travels to a predetermined position by fitting the rack and the pinion. However, the moving chamber is moved by a cylinder rod. The structure which moves a trolley | bogie or the structure which pulls a trolley | bogie with ropes, such as a chain and a wire, can also be employ | adopted. The same applies to the moving means in the front-rear direction (the approach / separation direction with respect to the film forming chamber).

  As the arrangement layout of the film forming chambers, a horizontal one-row configuration as in the present embodiment is recommended, but it may be arranged in a ring shape or a three-dimensional layout. That is, the film forming chambers are not only arranged in the horizontal direction but also stacked in the height direction and arranged in a planar shape. When such a configuration is adopted, the movement chamber is moved in the XYZ directions like a three-dimensional warehouse.

  In the above-described embodiment, the airtightness between the moving side chamber and the film forming chamber is ensured only by pressing the moving side chamber against the film forming chamber. However, some clamping mechanism may be used as an auxiliary.

  In addition, the storage chamber entrance / exit of the transfer chamber 5 is recommended to have a structure that does not have any shutter as in the above-described embodiment, but the cover is not intended to be a simple cover such as a warm bath or a bag or to maintain airtightness. A member may be provided.

  In the above-described embodiment, the number of transfer chambers 5 is one, but a plurality of transfer chambers 5 may be provided. When a plurality of transfer chambers 5 are provided, even if one transfer chamber 5 fails due to a trouble, production can be continued without lowering the operation rate. Normally, while one moving chamber 5 is moving, the other moving chambers 5 are kept in a position where they do not interfere.

  It is also possible to secure higher productivity by using two or more moving chambers and sequentially managing the moving positions.

  In the embodiment described above, a vacuum pump is mounted on the moving chamber 5 side. On the other hand, it is also possible to depressurize the movement chamber 5 using a vacuum pump (deposition chamber side pressure reducing device) 34 on the film forming chamber 15 side.

  When this configuration is adopted, the piping of the vacuum pump 34 is connected to a portion outside the shutter 18 of the film forming chamber 15. Then, after the transfer chamber 5 is connected to the film forming chamber 15, the inside of the transfer chamber 5 is decompressed by using a vacuum pump 34 on the film forming chamber 15 side by means such as valve switching.

  However, according to this measure, the piping from the vacuum pump 34 to the outside of the shutter 18 of the film forming chamber 15 becomes long, and the volume of the piping increases. Therefore, since it takes a long time to reach a predetermined ultimate vacuum, a configuration in which a vacuum pump is mounted on the moving chamber 5 side as in the above-described embodiment is recommended.

It is the whole perspective view which looked at the CVD apparatus of the embodiment of the present invention from the movement chamber side. It is the perspective view which looked at the chamber for movement employ | adopted with the CVD apparatus of embodiment of this invention from the storage chamber entrance / exit side. It is a conceptual diagram explaining the layout and schematic operation | movement of CVD apparatus of embodiment of this invention. It is a perspective view of the principal part of the base | substrate moving apparatus with which the base | substrate receiving / dispensing apparatus, the film-forming chamber, and the movement chamber were equipped. It is a perspective view which shows the internal structure of the film-forming chamber. It is a perspective view which shows the example of the shutter provided in the film-forming chamber entrance / exit of a film-forming chamber. It is a perspective view which shows the example of the shutter provided in the film-forming chamber entrance / exit of a film-forming chamber. It is a perspective view which shows the example of the shutter provided in the film-forming chamber entrance / exit of a film-forming chamber. It is a partially broken plane sectional view showing an internal structure of a film forming chamber. It is a cross-sectional perspective view of the electrode built in the film-forming chamber. It is a perspective view which shows the inside of the chamber for a movement. It is sectional drawing of a chamber moving apparatus. It is a plane sectional view showing the internal structure of a chamber body. It is a perspective view of a base carrier used in an embodiment of the present invention. It is a disassembled perspective view of the base | substrate carrier of FIG. It is an external appearance perspective view which shows the state which the chamber for movement and the film-forming chamber joined. It is a partially broken perspective view of a transfer chamber and a film formation chamber showing a state in which a substrate carrier moves from the transfer chamber to the film formation chamber. It is sectional drawing which shows the joining state of the flange of the chamber for a movement, and the film-forming chamber. It is a plane sectional view of a movement chamber and a film formation chamber showing a state where a substrate carrier moves from the movement chamber to the film formation chamber.

DESCRIPTION OF SYMBOLS 1 CVD apparatus 2 Substrate receiving / dispensing device 3 Film forming chamber group 5 Transfer chamber 8 Substrate moving device 16 Film forming chamber entrance / exit 17 Flange 18 Shutter 23a-23f Heater 25a-25e Electrode 32 Chamber moving device 35 Storage chamber entrance / exit 37 Flange 41 O-rings 43a to 43f Heater 46 Base 47 Storage chamber 50 Rail 51 Linear guide 52 Rack 55 Moving carriage 71 Cylinder 72 Base carrier 7

Claims (10)

A CVD apparatus for forming a thin film on a substrate having a predetermined shape includes a plurality of film forming chambers and one or more transfer chambers, and the film forming chamber includes a film forming chamber for forming a film on the substrate and the film forming chamber. comprising a film forming chamber entrance and out the substrate into the chamber, said the film forming chamber entrance shutter is provided with airtightness, it is connected to the film forming chamber side decompressor to the film forming chamber, the film forming The chamber has a film-forming function by plasma CVD, and a plurality of planar heaters and planar electrodes are arranged in parallel at predetermined intervals in the film-forming chamber of the film-forming chamber. Has a storage chamber for storing the base body, and a storage chamber entrance / exit for inserting / removing the base body into / from the storage chamber, and the storage chamber entrance / exit is provided with a closing member that is always open or not airtight, Storage room with storage room Decompressor is connected, the storage chamber each substrate a substrate and a multi accommodated in the mobile chamber is Tate置arranged in parallel with a predetermined interval, the film forming chamber is held in place The moving chamber is movable, the moving chamber can be moved, and the storage chamber inlet / outlet can be hermetically joined to the film forming chamber inlet / outlet of the film forming chamber, and the shutter at the film forming chamber inlet / outlet is closed. the housing chamber side pressure reducing device in a state depressurized space is closed by the housing chamber and the shutter, Ri thereafter transportable der the base of the transfer chamber side opening the shutter in the film forming chamber of the film forming chamber, storage chamber of the base of the transfer chamber is linearly moved in the surface direction is transferred to the deposition chamber of the film forming chamber, each of the substrates is characterized in that it is inserted between the heater and the electrode VD apparatus. A CVD method for forming a thin film on a substrate having a predetermined shape using a CVD apparatus having a plurality of film forming chambers and one or more transfer chambers, wherein the film forming chamber is a film forming chamber for forming a film on the substrate. And a film forming chamber inlet / outlet through which the substrate is taken in and out of the film forming chamber, an airtight shutter is provided at the film forming chamber inlet / outlet, and a film forming chamber-side decompression device is connected to the film forming chamber. The moving chamber has a storage chamber for storing the substrate, and a storage chamber inlet / outlet for taking the substrate in / out of the storage chamber, and the storage chamber inlet / outlet is always open or has an airtight sealing member. A storage chamber-side decompression device is connected to the storage chamber, the deposition chamber is fixed at a fixed position, the moving chamber is movable, and the shutter of the deposition chamber is closed. State The storage chamber is moved and the storage chamber entrance / exit is hermetically joined to the film formation chamber entrance / exit of the film formation chamber, and the shutter is closed by the storage chamber side pressure reducing device while the shutter of the film formation chamber entrance / exit is closed. that the reduced pressure space to be occluded by the storage room, then the transfer the base of the transfer chamber side shutter open deposition chamber of the film forming chamber, performs predetermined deposition on the substrate in the deposition chamber The film forming chamber has a film forming function by plasma CVD, and a plurality of planar heaters and planar electrodes are arranged vertically in parallel at predetermined intervals in the film forming chamber of the film forming chamber. The substrate has a flat plate shape, and a plurality of substrates are accommodated in the storage chamber of the transfer chamber, and the substrates are vertically arranged in parallel at predetermined intervals. , Linearly moved in the surface direction is transferred to the deposition chamber of the film forming chamber, each substrate, CVD method, characterized in that inserted between the heater and the electrode. A CVD method for forming a thin film on a substrate having a predetermined shape using a CVD apparatus having a plurality of film forming chambers and one or more transfer chambers, wherein the film forming chamber is a film forming chamber for forming a film on the substrate. And a film forming chamber inlet / outlet through which the substrate is taken in and out of the film forming chamber, an airtight shutter is provided at the film forming chamber inlet / outlet, and a film forming chamber-side decompression device is connected to the film forming chamber. The moving chamber has a storage chamber for storing the substrate, and a storage chamber inlet / outlet for taking the substrate in / out of the storage chamber, and the storage chamber inlet / outlet is always open or has an airtight sealing member. The film forming chamber is fixed at a fixed position, the moving chamber is movable, and the moving chamber is moved while the shutter of the film forming chamber is closed to enter and exit the storage chamber. Is hermetically bonded to the film forming chamber entrance and exit of the film forming chamber, and the space closed by the shutter and the storage chamber is decompressed by the film forming chamber side decompression device while the shutter at the film forming chamber entrance is closed, Thereafter, the shutter is opened and the substrate on the moving chamber side is transferred to the film forming chamber of the film forming chamber, and a predetermined film is formed on the substrate in the film forming chamber. The film forming chamber is formed by plasma CVD. The film forming chamber has a film forming function. In the film forming chamber of the film forming chamber, a plurality of planar heaters and planar electrodes are arranged vertically in parallel with a predetermined interval, and the substrate has a flat plate shape. A plurality of substrates are accommodated in the storage chamber, and the substrates are arranged in parallel with predetermined intervals in parallel, and the substrates in the storage chamber storage chamber move linearly in the plane direction to form a film in the deposition chamber. In the room Feed is, each substrate, CVD method, characterized in that inserted between the heater and the electrode.   When the film formation process in the film formation chamber is completed or prior to the completion of the film formation process, the transfer chamber is moved and its storage chamber inlet / outlet is hermetically bonded to the film formation chamber inlet / outlet of the film formation chamber. The space closed by the shutter and the storage chamber is reduced while the shutter at the entrance / exit of the film chamber is closed, and then the shutter is opened to transfer the substrate on the film forming chamber side to the moving chamber side. After closing the chamber, air or other gas is introduced into the storage chamber of the transfer chamber to balance the atmospheric pressure in the storage chamber with the external pressure, and the transfer chamber storage chamber entrance / exit is separated from the deposition chamber entrance / exit. 4. The CVD method according to claim 2 or 3, wherein the chamber after film formation is moved to a predetermined position by moving the chamber.   The moving chamber is provided with a substrate heating means for heating the substrate stored in the storage chamber, and after the space closed by the shutter and the storage chamber is decompressed, the substrate is heated by the heating means. The CVD method according to any one of claims 2 to 4.   6. The CVD method according to claim 2, wherein the storage chamber side pressure reducing device is a vacuum pump attached to the moving chamber.   The film forming chambers are arranged in a row with the film forming chamber inlets and outlets facing in the same direction, and the transfer chambers are arranged with the storage chamber inlets and outlets facing the film forming chamber inlets and outlets. 7. The CVD method according to claim 2, wherein the chamber is movable in a row direction of the film forming chamber and in a direction close to or away from the film forming chamber.   The substrate has a flat plate shape, and a plurality of substrates are accommodated in the storage chamber of the transfer chamber. The substrates are arranged in parallel and vertically, and the substrate in the transfer chamber storage chamber moves linearly in the surface direction to form a film. The CVD method according to claim 2, wherein the CVD method is transferred to a film forming chamber of the chamber. In each film forming chamber, CVD method according to any one of claims 2 to 8, characterized in that multilayer film is performed to the substrate. A CVD apparatus for forming a thin film on a substrate having a predetermined shape includes a plurality of film forming chambers and one or more transfer chambers, and the film forming chamber includes a film forming chamber for forming a film on the substrate and the film forming chamber. A film forming chamber inlet / outlet through which the substrate is taken in and out of the chamber; an airtight shutter is provided at the film forming chamber inlet / outlet; and a film forming chamber-side decompression device is connected to the film forming chamber; The chamber has a film-forming function by plasma CVD, and a plurality of planar heaters and planar electrodes are arranged in parallel at predetermined intervals in the film-forming chamber of the film-forming chamber. Has a storage chamber for storing the base body, and a storage chamber entrance / exit for inserting / removing the base body into / from the storage chamber, and the storage chamber entrance / exit is provided with a closing member that is always open or not airtight, Transfer chamber A plurality of substrates can be stored in the storage chamber, and each substrate is arranged in parallel with a predetermined interval in parallel, the film formation chamber is fixed at a fixed position, the moving chamber is movable, and moves. The chamber can be moved and the storage chamber entrance / exit can be hermetically joined to the film formation chamber entrance / exit of the film formation chamber. The space closed by the chamber is decompressed, and then the shutter is opened to transfer the substrate on the side of the moving chamber to the film forming chamber of the film forming chamber. A CVD apparatus, wherein the substrate is linearly moved and transferred to a film forming chamber of a film forming chamber, and each substrate is inserted between a heater and an electrode.