JP4432632B2 - Manufacturing method of mold for fine pattern molding - Google Patents
Manufacturing method of mold for fine pattern molding Download PDFInfo
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Description
本発明は、微細パターン成形用金型の製作方法に関し、特にアスペクト比の大きな深い孔や溝の微細パターンを有する成形品を成形する為の精密金型の製作方法に関する。 The present invention relates to a method for manufacturing a mold for forming a fine pattern, and more particularly to a method for manufacturing a precision mold for forming a molded article having a deep pattern of deep holes and grooves having a large aspect ratio.
近年、バイオ関連機器、医療機器、光学機器などの分野において、精度の高い微細パターン付き成形品を成形加工する要望が増え、それに伴って微細パターン成形用の種々の構造の精密金型が製作され、使用されている。
例えば、孔径が１０〜５０μｍ程度でアスペクト比が大きな複数の微細な孔を有する微細パターンや、幅が１０〜５０μｍでアスペクト比が大きな複数の微細な溝を有する微細パターンを有する精密成形品が種々の用途に採用されている。
液体や気体を吐出するノズル部材や、液体や気体の分離用のフィルター部材を製造するに際して、その孔の形成方法はフォトリソ技術を用いてフォトレジストに所望の微細パターンを形成し、それを電鋳転写して成形用の精密金型を製造し、その精密金型を用いて射出成形する技術がある。フォトリソ技術を用いた成形用精密金型の製作方法に関しては、特許文献１に開示された方法がある。
In recent years, in the fields of bio-related equipment, medical equipment, optical equipment, etc., there has been an increasing demand for molding processed products with high-precision fine patterns, and accordingly, precision molds with various structures for forming fine patterns have been manufactured. ,in use.
For example, there are various precision molded products having a fine pattern having a plurality of fine holes having a hole diameter of about 10 to 50 μm and a large aspect ratio, and a fine pattern having a plurality of fine grooves having a width of 10 to 50 μm and a large aspect ratio. It is adopted for use.
When manufacturing a nozzle member that discharges liquid or gas or a filter member for separating liquid or gas, the hole is formed by forming a desired fine pattern on the photoresist using photolithography, and then electroforming it. There is a technique for producing a precision mold for molding by transfer and injection molding using the precision mold. As a method for manufacturing a precision mold for molding using photolithography technology, there is a method disclosed in Patent Document 1.
特許文献１に記載された成形用金型の製作方法においては、シリコンパターン部材上に塗布したフォトレジストに、フォトマスクを介して微細パターンを紫外線で露光することによりマスクパターンを形成し、微細パターン化されたフォトレジストを介してイオン・エッチングであるＲＩＥによりエッチング処理して、シリコンパターン部材に微細パターンを形成し、その後フォトレジストを除去し、シリコンパターン部材の微細パターンの表面にＩＴＯ膜を導電層として形成した後、ニッケル電鋳処理によりメッキ層を成長させて微細パターン成形用の精密金型を製造する。
しかし、アスペクト比が大きな複数の孔や複数の溝を有する微細パターン成形用金型を製作する場合に、特許文献１に記載された方法では、微細パターンの表面全体に導電層を形成してニッケル電鋳処理を行うので、微細パターンの凹部の底面からのメッキ層の形成よりも、微細パターンの突部の頂面側に形成されるメッキ層の方が成長速度が速くなる。そのため、パターンの突部の頂面側に形成されたメッキ層により微細パターンの凹部の入り口側が閉塞されてしまい、その凹部の内部は空洞となり易いため、金型の隅々までメッキ層が均質に形成された強度に優れる精密金型を製作することが非常に難しい。 However, when manufacturing a fine pattern molding die having a plurality of holes and grooves having a large aspect ratio, the method described in Patent Document 1 forms a conductive layer on the entire surface of the fine pattern to form nickel. Since the electroforming process is performed, the growth rate of the plating layer formed on the top surface side of the protrusion of the fine pattern is faster than the formation of the plating layer from the bottom surface of the recess of the fine pattern. For this reason, the entrance side of the concave portion of the fine pattern is blocked by the plating layer formed on the top surface side of the projecting portion of the pattern, and the inside of the concave portion tends to become a cavity, so that the plating layer is uniform to every corner of the mold. It is very difficult to produce a precision mold with excellent strength.
しかも、シリコンのパターン部材をエッチング処理することで、シリコンのパターン部材に凹凸のある微細パターンを形成するため凹部の深さに誤差が発生しやすく、金型の製作精度を高めるのが困難である。さらに、前記特許文献１の精密金型の製作方法は、工程数が多いため、製作コスト的に不利であり、金型の製作コストを低減するのが難しい。 In addition, by etching the silicon pattern member, an uneven pattern is formed on the silicon pattern member, so that an error is likely to occur in the depth of the recess, and it is difficult to improve the manufacturing accuracy of the mold. . Furthermore, since the precision mold manufacturing method of Patent Document 1 has a large number of steps, it is disadvantageous in terms of manufacturing cost, and it is difficult to reduce the manufacturing cost of the mold.
本発明の目的は、アスペクト比の大きな複数の孔や複数の溝を有する微細パターン成形用の精密金型の製作方法を提供すること、簡単に実施可能でコスト的に有利な微細パターン成形用の精密金型の製作方法を提供すること、精度の高い微細パターン成形用金型を製作できる方法を提供すること、等である。 An object of the present invention is to provide a method for producing a precision mold for forming a fine pattern having a plurality of holes and grooves having a large aspect ratio, and to enable easy and cost-effective fine pattern forming. To provide a method for manufacturing a precision mold, to provide a method for manufacturing a mold for forming a fine pattern with high accuracy, and the like.
請求項１の微細パターン成形用金型の製作方法は、絶縁性の無機材料で作ったパターン部材に、成形対象品の微細パターンと同形の貫通パターンを貫通状に形成する第１工程と、絶縁材料からなる絶縁部材の表面に前記パターン部材の載置される面に形成された貫通パターンの開放部分以外の部分を覆うマスキングを施した状態で蒸着又はスパッタリングを施すことにより、前記絶縁部材の表面に導電膜を形成する第２工程と、前記絶縁部材の表面に前記パターン部材を載置して密着状に固定する第３工程と、前記パターン部材と絶縁部材にメッキ処理を施し耐蝕性金属からなる電鋳金型を製作する第４工程と、前記電鋳金型からパターン部材と絶縁部材を分離し微細パターン成形用金型とする第５工程とを備えたことを特徴とする。 According to a first aspect of the present invention, there is provided a method for producing a fine pattern molding die, wherein a first step of forming a through pattern having the same shape as a fine pattern of a product to be molded in a pattern member made of an insulating inorganic material, The surface of the insulating member is subjected to vapor deposition or sputtering in a state where masking is applied to cover the surface of the insulating member made of a material other than the open portion of the penetrating pattern formed on the surface on which the pattern member is placed. A second step of forming a conductive film on the surface, a third step of placing the pattern member on the surface of the insulating member and fixing the pattern member in close contact, and plating the pattern member and the insulating member to form a corrosion resistant metal. And a fifth step of separating the pattern member and the insulating member from the electroforming die to form a fine pattern forming die.
絶縁性の無機材料で作ったパターン部材に、成形対象品の微細パターンと同形の貫通パターンを貫通状に形成し、絶縁材料からなる絶縁部材の表面にパターン部材の載置される面に形成された貫通パターンの開放部分以外の部分を覆うマスキングを施した状態で蒸着又はスパッタリングを施すことにより、絶縁部材の表面に導電膜を形成し、絶縁部材の表面に前記パターン部材を載置して密着状に固定するので、パターン部材の貫通パターンの底面のみに導電膜を有することとなる。パターン部材と絶縁部材にメッキ処理（電鋳処理）を施す際には、貫通パターンの底面に金属メッキ膜からなるメッキ層が形成され、メッキ処理が進むにつれてそのメッキ層が成長し、貫通孔パターンの底面から積み上げられる。その結果、パターン部材と絶縁部材の表面全体をメッキ層により被膜した電鋳金型が形成されるので、貫通パターンの孔や溝の内部には空洞が生じることなく電鋳金型を均質に形成することができる。 A pattern member made of an insulating inorganic material is formed with a penetrating pattern that is the same shape as the fine pattern of the product to be molded in a penetrating shape, and is formed on the surface of the insulating member made of insulating material on the surface on which the pattern member is placed A conductive film is formed on the surface of the insulating member by performing vapor deposition or sputtering in a state where masking is performed to cover a portion other than the open portion of the penetrating pattern, and the pattern member is placed on and closely adhered to the surface of the insulating member. Since it fixes to the shape, it has a conductive film only in the bottom face of the penetration pattern of a pattern member. When plating (electroforming) is performed on the pattern member and the insulating member, a plating layer made of a metal plating film is formed on the bottom surface of the through pattern, and the plating layer grows as the plating process proceeds, and the through hole pattern It is stacked from the bottom. As a result, an electroformed mold in which the entire surface of the pattern member and the insulating member is coated with a plating layer is formed, so that the electroformed mold is uniformly formed without generating a cavity in the hole or groove of the through pattern. Can do.
請求項２の微細パターン成形用金型の製作方法は、請求項１の発明において、前記第１工程においてガラス製のパターン部材を用い、前記貫通パターンをディープ・イオン・エッチングにより形成することを特徴とする。 According to a second aspect of the present invention, there is provided a method for producing a fine pattern molding die according to the first aspect of the invention, wherein in the first step, a glass pattern member is used and the through pattern is formed by deep ion etching. And
請求項３の微細パターン成形用金型の製作方法は、請求項２の発明において、前記第２工程においてシリコン製の絶縁部材を採用し、第４工程において耐蝕性金属であるニッケルからなる電鋳金型を製作することを特徴とする。
請求項４の微細パターン成形用金型の製作方法は、請求項３の発明において、前記第２工程においてパターン部材を前記絶縁部材に陽極接合により固定することを特徴とする。
According to a third aspect of the present invention, there is provided a method for producing a fine pattern molding die according to the second aspect of the invention, wherein an insulating member made of silicon is used in the second step, and an electroformed metal made of nickel which is a corrosion-resistant metal in the fourth step. It is characterized by producing a mold.
Method for fabricating a fine pattern mold according to claim 4 is the invention of claim 3, characterized in that the pattern member in said second step fixed by anodic bonding to said insulation member.
請求項１の発明によれば、絶縁性の無機材料で作ったパターン部材に、成形対象品の微細パターンと同形の貫通パターンを貫通状に形成し、絶縁材料からなる絶縁部材の表面にパターン部材の載置される面に形成された貫通パターンの開放部分以外の部分を覆うマスキングを施した状態で蒸着又はスパッタリングを施すことにより、絶縁部材の表面に導電膜を形成し、絶縁部材の表面にパターン部材を載置して密着状に固定するので、絶縁部材にパターン部材を接着剤を用いることなく、例えば、陽極接合等により固着することができるし、前記導電膜の膜厚も管理できるから、微細パターン成形用金型を精度よく製作することが可能となる。 According to the first aspect of the present invention, a pattern member made of an insulating inorganic material is formed with a penetrating pattern having the same shape as the fine pattern of the product to be molded in a penetrating shape, and the pattern member is formed on the surface of the insulating member made of the insulating material. A conductive film is formed on the surface of the insulating member by performing vapor deposition or sputtering in a state where masking is performed to cover a portion other than the open portion of the penetrating pattern formed on the surface on which the substrate is placed. Since the pattern member is placed and fixed in close contact, the pattern member can be fixed to the insulating member without using an adhesive, for example, by anodic bonding, and the film thickness of the conductive film can be controlled. Thus, it becomes possible to accurately manufacture a mold for forming a fine pattern.
そして、パターン部材と絶縁部材にメッキ処理（電鋳処理）を施す際には、最初の段階では貫通パターンの底面に金属メッキ膜からなるメッキ層が形成され、その後時間の経過と共にそのメッキ層が成長して貫通パターンの底面から貫通パターンの孔や溝を埋めながら積み上げられる。その結果、パターン部材と絶縁部材の表面全体を電鋳処理のメッキ層により被膜して電鋳金型となるので、貫通パターンの内部には空洞が生じることなく、形状精度と空洞によって、その金型を使用時に発生する金型の破損や耐久性の不足の問題がない強度に優れる電鋳金型が形成され、その電鋳金型から絶縁部材を分離すれば微細パターン成形用金型が得られる。しかも、貫通パターンの底部だけに導電膜を形成しておいて電鋳を行うので、貫通パターンの孔や溝の奥から順にメッキ層が積層的に形成されるため、アスペクト比の大きな孔や溝を成形するのに適した金型も確実に精度よく形成することができる。また、絶縁部材にパターン部材を固定後に貫通パターンを通して導電層を形成する必要がないので、簡単に実施可能でコスト的にも有利である。 When the plating process (electroforming process) is performed on the pattern member and the insulating member, a plating layer made of a metal plating film is formed on the bottom surface of the penetrating pattern in the first stage, and then the plating layer is formed over time. It grows and is piled up from the bottom of the penetrating pattern while filling holes and grooves in the penetrating pattern. As a result, the entire surface of the pattern member and the insulating member is coated with an electroformed plating layer to form an electroformed mold, so that there is no cavity inside the penetrating pattern. An electroformed mold having excellent strength that does not have a problem of damage to the mold or lack of durability that occurs during use is formed, and a mold for forming a fine pattern can be obtained by separating the insulating member from the electroformed mold. Moreover, since the only form a conductive film in advance electroforming bottom of the through pattern, since the plating layer is laminated formed from the back of the hole or the groove of the through pattern in order, large pores and grooves of an aspect ratio A mold suitable for molding can be reliably formed with high accuracy. Moreover, since it is not necessary to form a conductive layer through a penetration pattern after fixing a pattern member to an insulating member, it can be implemented easily and is advantageous in terms of cost.
請求項２の発明によれば、ガラス製のパターン部材を用い、貫通孔パターンをディープ・イオン・エッチングにより形成するので、パターン部材に対するエッチング処理を垂直に深く精度よく高速に行うことができる。 According to the second aspect of the present invention, the glass pattern member is used and the through hole pattern is formed by deep ion etching. Therefore, the etching process for the pattern member can be performed vertically deeply with high accuracy at high speed.
請求項３の発明によれば、シリコン製の絶縁部材を採用し、耐蝕性金属であるニッケルからなる電鋳金型を製作するので、シリコン製の絶縁部材の上にガラス製のパターン部材を載置した後、高温となるよう加熱し高電圧を与えることにより、シリコンとガラスの間に生じる陽極接合によりこれらを接合することができる。その場合、絶縁部材とパターン部材の間には、接着剤等中間層を形成しないので、成形対象品において孔や溝の深さの精度が要求される場合には効果的である。 According to the invention of claim 3 , since the silicon-made insulating member is employed and the electroformed mold made of nickel which is a corrosion-resistant metal is produced, the glass pattern member is placed on the silicon-made insulating member. Then, by heating to high temperature and applying a high voltage, these can be bonded by anodic bonding generated between silicon and glass. In that case, since an intermediate layer such as an adhesive is not formed between the insulating member and the pattern member, it is effective when accuracy of the depth of the hole or groove is required in the product to be molded.
請求項４の発明によれば、パターン部材を絶縁部材に陽極接合により固定するため、精度の高い微細パターン成形用金型を製作することができる。 According to the invention of claim 4 , since the pattern member is fixed to the insulating member by anodic bonding, a highly accurate fine pattern molding die can be manufactured.
本発明の微細パターン成形用金型の製作方法は、絶縁性の無機材料で作ったパターン部材に、成形対象品の微細パターンと同形の貫通パターンを貫通状に形成する第１工程と、絶縁材料からなる絶縁部材の表面に前記パターン部材の載置される面に形成された貫通パターンの開放部分以外の部分を覆うマスキングを施した状態で蒸着又はスパッタリングを施すことにより、前記絶縁部材の表面に導電膜を形成する第２工程と、前記絶縁部材の表面に前記パターン部材を載置して密着状に固定する第３工程と、前記パターン部材と絶縁部材にメッキ処理を施し耐蝕性金属からなる電鋳金型を製作する第４工程と、前記電鋳金型からパターン部材と絶縁部材を分離し微細パターン成形用金型とする第５工程とを備えたことを特徴とするものである。 The method for producing a mold for forming a fine pattern according to the present invention includes a first step of forming a penetrating pattern having the same shape as the fine pattern of a product to be molded in a pattern member made of an insulating inorganic material, and an insulating material. The surface of the insulating member is formed by performing vapor deposition or sputtering in a state where masking is performed to cover a portion other than the open portion of the penetrating pattern formed on the surface on which the pattern member is placed on the surface of the insulating member. A second step of forming a conductive film; a third step of placing the pattern member on the surface of the insulating member and fixing the pattern member in close contact; and plating the pattern member and the insulating member to form a corrosion-resistant metal. it is characterized in that it comprises a fourth step, a fifth step of said electroforming die separates the pattern member and the insulating member from the fine pattern mold for fabricating the electroforming die
次に、実施例の微細パターン成形用金型の製作方法について説明する。
図１〜図４に示すように、ラッピングにより鏡面状に研磨した硼珪酸ガラス（ガラス）製のパターン部材１Ｂに、アスペクト比の大きな複数の貫通孔３の集合である貫通パターン３Ｂを形成する。厚さ数μｍ〜数ｍｍの範囲の所定厚さ（本実施例の場合、例えば、１ｍｍ）の硼珪酸ガラス製のパターン部材１Ｂの表面の全面にフォトレジストを塗布して乾燥させた後、フォトマスクのパターンを用いて、紫外線によりフォトレジストを露光して、パターン部材１Ｂの表面にフォトレジストによるパターンを形成する。次に、成形対象品の微細パターンと同形の貫通パターン３Ｂをディープ・イオン・エッチングであるＤｅｅｐ−ＲＩＥにより形成する。この場合、フォトレジストによるパターンを形成したパターン部材１ＢをＤｅｅｐ−ＲＩＥ用のチャンバー内に導入し、このチャンバー内にＳＦ６ガスとＣ４Ｆ８ガスを交互に供給する。ＳＦ６は、パターン部材１Ｂをエッチングする役割を、Ｃ４Ｆ８はエッチングにより形成される孔の壁面にポリマーの保護膜を形成する役割を夫々果たし、エッチングと保護膜形成プロセスを交互に行うことにより貫通パターン３Ｂを形成し、パターン形成終了後フォトレジストを除去する。尚、本実施例の場合の微細パターン３Ｂは、多数の小径の円形貫通孔３をマトリックス状に配置したパターンであるが、微細パターンとしては、複数の種々の形状の孔を配置したパターン、複数の溝を配置したパターン、複数の孔と溝とを混在的に配置したパターンなどの微細パターン、など種々の微細パターンでもよい。硼珪酸ガラスのＤｅｅｐ−ＲＩＥ加工では、ガラスに含まれるＡｌ，Ｎａなどの反応生成物が不揮発性なため、それがパターン側壁に堆積し、エッチングする幅が広いとエッチングした側面が垂直にならない。このことを利用してテーパーが必要なパターンを形成する例について説明する。
貫通パターン３Ｂの断面にテーパーが生じた場合、開放部分が小さい方以外の部分を覆うマスキング部材１３を絶縁部材４Ｂの表面に施した後、絶縁部材４Ｂの表面に貫通パターン３Ｂと同パターンのニッケルや金等からなる導電膜１４を公知の気相化学蒸着又はイオンスパッタリングにより形成する。
Next, a method for manufacturing a fine pattern molding die of the embodiment will be described .
As shown in FIGS. 1 to 4, the pattern member 1B made of borosilicate glass was polished to a mirror-like (glass) by lapping, to form a through pattern 3B is a set of a large plurality of through-holes 3 of the aspect ratio . A photoresist is applied to the entire surface of the pattern member 1B made of borosilicate glass having a predetermined thickness (in this embodiment, for example, 1 mm) in the range of several μm to several mm, and then dried. Using the mask pattern, the photoresist is exposed to ultraviolet rays to form a photoresist pattern on the surface of the pattern member 1B. Next, a penetration pattern 3B having the same shape as the fine pattern of the product to be molded is formed by Deep-RIE which is deep ion etching. In this case, the pattern member 1B on which a pattern made of a photoresist is formed is introduced into a deep-RIE chamber, and SF6 gas and C4F8 gas are alternately supplied into the chamber. SF6 plays the role of etching the pattern member 1B, C4F8 plays the role of forming a protective film of the polymer on the wall surface of the hole formed by etching, and the penetrating pattern 3B by alternately performing the etching and the protective film forming process. After the pattern formation is completed, the photoresist is removed. The fine pattern 3B in this embodiment is a pattern in which a large number of small-diameter circular through-holes 3 are arranged in a matrix, but the fine pattern includes a pattern in which a plurality of holes having various shapes are arranged, and a plurality of fine patterns 3B. Various fine patterns such as a pattern in which a plurality of grooves are arranged and a fine pattern such as a pattern in which a plurality of holes and grooves are arranged in a mixed manner may be used. In Deep-RIE processing of borosilicate glass, reaction products such as Al and Na contained in the glass are non-volatile, so that they are deposited on the side walls of the pattern, and if the etching width is wide, the etched side surface does not become vertical. An example of forming a pattern that requires taper by using this fact will be described.
When the cross section of the penetrating pattern 3B is tapered, a masking member 13 that covers a portion other than the smaller open portion is applied to the surface of the insulating member 4B, and then the nickel of the same pattern as the penetrating pattern 3B is formed on the surface of the insulating member 4B. A conductive film 14 made of metal or the like is formed by known vapor phase chemical vapor deposition or ion sputtering.
次に、このパターン部材１Ｂの開放部分が小さい方の面をシリコン製の絶縁部材４Ｂの貫通孔３の底面６に貫通パターン３Ｂと同パターンの導電膜１４が位置するように、パターン部材１Ｂを絶縁部材４Ｂの表面に載置し、両者を陽極接合により密着状に固定する。 Next, the pattern member 1B is arranged so that the conductive film 14 having the same pattern as the through pattern 3B is positioned on the bottom surface 6 of the through hole 3 of the insulating member 4B made of silicon. It is mounted on the surface of the insulating member 4B and both are fixed in close contact by anodic bonding.
この陽極接合の際、パターン部材１Ｂと絶縁部材４Ｂを３００〜４００℃に加熱して５００Ｖ〜１ｋＶの電圧を印加することによって、パターン部材１Ｂの底面と絶縁部材４Ｂの表面とを陽極接合させ、パターン部材１Ｂを絶縁部材４Ｂに密着状に固定する。陽極接合するパターン部材１Ｂと絶縁部材４Ｂとの接合は、お互いの材質がシリコン同士であれば、汎用的に利用される手段である。 In this anodic bonding, the pattern member 1B and the insulating member 4B are heated to 300 to 400 ° C. and a voltage of 500 V to 1 kV is applied to anodic bond the bottom surface of the pattern member 1B and the surface of the insulating member 4B. The pattern member 1B is fixed to the insulating member 4B in close contact. The bonding between the pattern member 1B and the insulating member 4B to be anodically bonded is a general-purpose means if the materials are silicon.
このようにして母型７Ｂを形成後、図５、図６に示すように、この母型７Ｂを用いて電鋳メッキ処理により電鋳金型１１Ｂを製作し、その電鋳金型１１Ｂを母型７Ｂから分離することで、微細パターン成形用金型１２Ｂが得られる。この場合、ニッケルイオンを含んだ電解メッキ液を満たした電鋳用のメッキ槽内に母型７Ｂを導入して、電鋳処理を施す。この場合、メッキが不要な部分には、メッキがされないように絶縁部材４Ｂの裏面他は、マスキング部材によりマスキングする。母型７Ｂを陰極として電流を流し、母型７Ｂにニッケルを電気化学的に析出させることにより形成されるメッキ層を成長させて、その電鋳金型１１Ｂのメッキ層の厚さが所定の厚さになった時点で電鋳処理を終了する。電鋳金型１１Ｂの厚さは数１０μｍ〜数ｍｍであり、成形対象品の孔や溝の深さや射出成形時における耐久性などを考慮して電鋳金型１１Ｂの厚さを決定する。電鋳金型１１Ｂにより被覆された母型７Ｂを取り出し、電鋳金型１１Ｂを母型７Ｂから剥離させ、微細パターン成形用金型１２Ｂとする。 After forming the mother die 7B in this way, as shown in FIGS. 5 and 6 , the mother die 7B is used to produce an electroformed mold 11B by electroforming plating, and the electroformed die 11B is used as the mother die 7B. By separating from the above, a fine pattern molding die 12B is obtained. In this case, the mother die 7B is introduced into an electroforming plating tank filled with an electrolytic plating solution containing nickel ions, and electroforming is performed. In this case, the back surface of the insulating member 4B and the like are masked with a masking member so that the portions that do not require plating are not plated. A plating layer is formed by passing a current through the mother die 7B and electrochemically depositing nickel on the mother die 7B. The thickness of the plating layer of the electroforming die 11B is a predetermined thickness. At this point, the electroforming process is terminated. The thickness of the electroformed mold 11B is several tens of μm to several mm, and the thickness of the electroformed mold 11B is determined in consideration of the depth of the hole or groove of the product to be molded, durability during injection molding, and the like. The mother die 7B covered with the electroforming die 11B is taken out, and the electroforming die 11B is peeled off from the mother die 7B to obtain a fine pattern forming die 12B.
以上のように、陽極接合によりパターン部材１Ｂと絶縁部材４Ｂを接着剤を用いることなく陽極接合により固定することができる。また、導電膜１４は、接着剤の膜厚に比べて薄く形成することができ、更に、膜厚も管理することができる。よって、微細パターン成形用金型１２Ｂにおける貫通孔３Ｂを成形する型部分の高さ精度も高くなる。 As described above, the pattern member 1B and the insulating member 4B can be fixed by anodic bonding without using an adhesive by anodic bonding. Further, the conductive film 14 can be formed thinner than the film thickness of the adhesive, and the film thickness can also be managed. Therefore, the height accuracy of the mold portion for molding the through hole 3B in the fine pattern molding die 12B is also increased.
次に、前記実施例を部分的に変更した変更例について説明する。
１）実施例において、ＳＦ６ガスとＣ４Ｆ８ガスを供給して行うＤｅｅｐ−ＲＩＥにより、貫通パターン３Ａ，３Ｂの貫通孔３を形成したが、ハロゲン元素又はハロゲン元素を含む反応ガスを用いるＲＩＥにより行ってもよいし、フェムト秒レーザなどを用いたレーザ加工により行ってもよい。
Next, a modified example in which the above embodiment is partially modified will be described.
1) In the example, the through holes 3 of the through patterns 3A and 3B were formed by Deep-RIE performed by supplying SF6 gas and C4F8 gas, but by RIE using a halogen element or a reaction gas containing a halogen element. Alternatively, laser processing using a femtosecond laser or the like may be performed.
２）実施例において、パターン部材には硼珪酸ガラス板を用いたが、例えば、シリコン、水晶、石英、セラミックス、その他の種々絶縁性の無機材料からなるパターン部材を採用可能である。また、絶縁部材としては、シリコン以外に、水晶、石英、セラミックス、その他の種々絶縁性の無機材料からなる絶縁部材を採用することができる。 Oite 2) embodiment, the pattern member using a borosilicate glass plate, for example, silicon, can be employed quartz, quartz, ceramics, a pattern member made of other various insulating inorganic material. In addition to silicon, an insulating member made of quartz, quartz, ceramics, or other various insulating inorganic materials can be employed as the insulating member.
３）その他、本発明は前記実施例のものに限定されるものではなく、当業者であれば、前記実施例に種々の変更を付加した形態で実施可能であり、本発明はそのような変更された種々の形態を包含するものである。 3) In addition, the present invention is not intended to be limited to the above embodiments, those skilled in the art, may be embodied in a form obtained by adding various changes to the embodiments, the present invention is such changes Various forms are included.
本発明は、アスペクト比の大きな孔や溝を有する微細パターン成形用の金型の製作方法に適用することができる。 The present invention can be applied to a method for manufacturing a mold for forming a fine pattern having holes and grooves having a large aspect ratio.
１Ｂ 硼珪酸ガラス製パターン部材
３Ｂ 貫通パターン
４Ｂ 絶縁部材
１１Ｂ 電鋳金型
１２Ｂ 微細パターン成形用金型
１３ マスキング部材
１４ 導電膜
1 B Pattern member made of borosilicate glass
3 B through pattern
4 B insulating member
1 1B Electroforming mold
1 2B Mold for forming fine pattern 13 Masking member 14 Conductive film
Claims (4)
絶縁性の無機材料で作ったパターン部材に、成形対象品の微細パターンと同形の貫通パターンを貫通状に形成する第１工程と、
絶縁材料からなる絶縁部材の表面に前記パターン部材の載置される面に形成された貫通パターンの開放部分以外の部分を覆うマスキングを施した状態で蒸着又はスパッタリングを施すことにより、前記絶縁部材の表面に導電膜を形成する第２工程と、
前記絶縁部材の表面に前記パターン部材を載置して密着状に固定する第３工程と、
前記パターン部材と絶縁部材にメッキ処理を施し耐蝕性金属からなる電鋳金型を製作する第４工程と、
前記電鋳金型からパターン部材と絶縁部材を分離し微細パターン成形用金型とする第５工程と、 を備えたことを特徴とする微細パターン成形用金型の製作方法。 In the manufacturing method of the mold for fine pattern molding,
A first step of forming a penetrating pattern having the same shape as the fine pattern of the product to be molded in a pattern member made of an insulating inorganic material;
The surface of the insulating member made of an insulating material is subjected to vapor deposition or sputtering in a state where masking is applied to cover a portion other than the open portion of the penetrating pattern formed on the surface on which the pattern member is placed. A second step of forming a conductive film on the surface;
A third step of placing the pattern member on the surface of the insulating member and fixing the pattern member in close contact;
A fourth step of producing an electroforming mold made of a corrosion-resistant metal by plating the pattern member and the insulating member;
And a fifth step of separating the pattern member and the insulating member from the electroforming mold to form a fine pattern forming mold, and a method for producing a fine pattern forming mold.
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