JP4424595B2 - Resin composition for semiconductor encapsulation - Google Patents

Description

  The present invention relates to a semiconductor sealing resin composition (hereinafter sometimes simply referred to as a resin composition) for sealing a gap between a printed circuit board and a semiconductor element in a semiconductor device, and the semiconductor sealing resin The present invention relates to a semiconductor device sealed with a composition.

  As a recent demand for higher performance, lighter, thinner, and smaller semiconductor devices, flip chip mounting has been performed in which semiconductor elements are mounted on a printed circuit board with a face-down structure. Generally, in flip chip mounting, a gap between a semiconductor element and a printed circuit board is sealed with a thermosetting resin composition in order to protect the semiconductor element.

  In the flip-chip mounting method, since the semiconductor element and the printed circuit board having different linear expansion coefficients are directly electrically connected, the reliability of the connection portion is a problem.

  As a countermeasure, fill the gap between the semiconductor element and the printed circuit board with a liquid resin material and cure it to form a cured resin body, and then disperse the stress concentrated on the electrical connection part to the cured resin body. A method for improving reliability is employed.

  In recent years, in order to improve the productivity of such a semiconductor device, after applying a solderable thermosetting resin composition on a printed circuit board in advance, a flip chip is mounted on the printed circuit board and simultaneously sealed with a resin. Then, a method of performing solder connection (hereinafter referred to as a no-flow method) has been intensively studied (see, for example, Patent Document 1).

  In this no-flow system, the thermosetting resin composition needs to have a high potential since the solder connection needs to be sufficiently made before the thermosetting resin composition reaches gelation in the solder connection process. (See, for example, Patent Document 2).

On the other hand, in the field of manufacturing a semiconductor device by transfer molding, a thermosetting resin composition composed of an epoxy resin and a phenol resin is generally widely used. As the curing accelerator, an imidazole derivative, a tertiary amine compound, three Secondary phosphine compounds, derivatives thereof, quaternary phosphonium salts, and the like have been conventionally used. Among these curing accelerators, it has already been reported that quaternary phosphonium salts are particularly effective from the viewpoint of moisture resistance, moldability, and storage stability (see, for example, Patent Documents 3 and 4).
JP 2001-329048 A Japanese National Patent Publication No. 11-510961 Japanese Patent Publication No. 56-45491 JP-A-6-228279

  In order to effectively advance resin curing at the time of resin molding, these quaternary phosphonium salts are used in a state of being previously mixed with a phenol resin as a curing agent by melt mixing. However, when the quaternary phosphonium salt is used by previously compatibilizing it with a phenol resin that is a curing agent in the above-described no-flow method, the quaternary phosphonium salt is thermally dissociated into an active state, and the potential is deactivated. The desired pot life and solder connectivity were not obtained.

  Therefore, the present invention is not only excellent in pot life but also moisture resistance, which is preferably used in a method of manufacturing a semiconductor device in which a semiconductor element with a protruding electrode is mounted on a printed circuit board in a face-down structure by a no-flow method. Another object of the present invention is to provide a resin composition for encapsulating a semiconductor that is also excellent in solder connectivity.

That is, the present invention
[1] For use in no-flow manufacturing of semiconductor devices,
(A) an epoxy resin having two or more epoxy groups in one molecule;
(B) a phenolic resin having two or more hydroxyl groups in one molecule;
(C) a flux activator, and (D) the following general formula (I):

(Wherein, X _{1 to} X ₅ are hydrogen, an alkyl group having 1 to 9 carbon atoms, or fluorine, which may be the same as or different from each other)
A resin composition for encapsulating a semiconductor comprising a curing accelerator comprising particles having a maximum particle size of 30 μm or less and a standard deviation of an average particle size of 5 μm or less, the epoxy of (A) A semiconductor encapsulant obtained by melt-mixing a resin, a component containing the phenol resin of (B), and the flux activator of (C), and then dispersing the curing accelerator of (D) in the resulting melt mixture. Stopping resin composition ,
[2] The component (C) is represented by the following general formula (II):

The resin composition for semiconductor encapsulation according to [1], which is a compound having a chemical bond represented by:
[3] The semiconductor encapsulating resin composition according to [1] or [2], wherein the reaction exothermic peak temperature in differential calorimetry is 170 ° C. to 250 ° C., and [4] any of [1] to [3] The present invention relates to a semiconductor device sealed with the semiconductor sealing resin composition.

  According to the present invention, it is used in a method of manufacturing a semiconductor device in which a semiconductor element with a protruding electrode is mounted on a printed circuit board in a face-down structure by a no-flow method, has excellent pot life, and also has moisture resistance and solder connectivity. An excellent resin composition for encapsulating a semiconductor can be provided.

The resin composition for encapsulating a semiconductor of the present invention (hereinafter sometimes simply referred to as a resin composition) is used for no-flow manufacturing of a semiconductor device,
(A) an epoxy resin having two or more epoxy groups in one molecule;
(B) a phenolic resin having two or more hydroxyl groups in one molecule;
(C) a flux activator, and (D) particles having a maximum particle size of 30 μm or less and a standard deviation of the average particle size of 5 μm or less. The following general formula (I):

(Wherein, X _{1 to} X ₅ are hydrogen, an alkyl group having 1 to 9 carbon atoms, or fluorine, which may be the same as or different from each other)
It has one big characteristic in containing the hardening accelerator represented by these.

  In the present specification, as described above, the no-flow method is, as described above, after pre-applying a solderable resin composition on a printed circuit board, and then mounting the semiconductor element on the printed circuit board and simultaneously performing resin sealing, Next, a method of performing solder connection.

  Although it does not specifically limit as an epoxy resin which has two or more epoxy groups in 1 molecule which is (A) component contained in the resin composition of this invention, For example, bisphenol A type epoxy resin, bisphenol F-type epoxy resins, phenol novolac-type epoxy resins and cresol novolac-type epoxy resins, etc. novolac-type epoxy resins, alicyclic epoxy resins, triglycidyl isocyanurates, hydantoin epoxy resins and other nitrogen-containing ring epoxy resins, water-added bisphenol A type Epoxy resin, aliphatic epoxy resin, glycidyl ether type epoxy resin, bisphenol S type epoxy resin, biphenyl type epoxy resin, dicyclocyclic type epoxy resin, naphthalene type epoxy resin, etc. From the screw Phenol A type epoxy resin, bisphenol F type epoxy resin, naphthalene type epoxy resin is preferably used. These may be used alone or in combination of two or more.

  The epoxy equivalent of the epoxy resin is preferably 90 to 1000 g / eq, more preferably 100 to 500 g / eq, from the viewpoint of controlling the mechanical strength and glass transition temperature of the cured product of the resin composition. The content of the epoxy resin in the resin composition is preferably 5 to 90% by weight, more preferably 10 to 80% by weight, from the viewpoints of heat resistance and moisture resistance.

  Although it does not specifically limit as a phenol resin which has a 2 or more hydroxyl group in 1 molecule which is (B) component contained in the resin composition of this invention, For example, a cresol novolak resin, a phenol novolak resin, Examples include dicyclopentadiene cyclic phenol resins, phenol aralkyl resins, naphthol resins, and allylic phenol resins thereof. From the viewpoint of fluidity and curability, resins having a softening point at 40 to 70 ° C., for example, phenol novolac A resin or an allylated phenol resin obtained by allylating the above phenol resin is preferably used. These may be used alone or in combination of two or more.

  The content of the phenol resin in the resin composition of the present invention is preferably such an amount that the mixing ratio with the epoxy resin is suitable. From the viewpoint of ensuring the curability of the resin composition of the present invention, the heat resistance of the cured product and the moisture resistance reliability, the mixing ratio of the epoxy resin and the phenol resin is a phenol resin with respect to the epoxy equivalent of 1 g / eq of the epoxy resin. It is preferable that the hydroxyl group equivalent is 0.5 to 1.5 g / eq, more preferably 0.7 to 1.2 g / eq.

  The flux activator which is the component (C) contained in the resin composition of the present invention is an acidic substance having protons and means a substance having the property of removing an oxide film of a metal oxide. As, for example, aliphatic monocarboxylic acids such as valeric acid, lauric acid, stearic acid, aliphatic dicarboxylic acids such as succinic acid, adipic acid, sebacic acid, 1,10-dodecanedicarboxylic acid, benzoic acid, phthalic acid, Examples include aromatic carboxylic acids such as 1,2,4-trimellitic acid and pimelic acid, and rosin derivatives. Or the following general formula (II) produced | generated by reaction of this organic carboxylic acid and a vinyl ether compound:

A compound having a chemical bond represented by: The vinyl ether compound is not particularly limited as long as it is a compound having one or more vinyl ether groups in one molecule, and examples thereof include n-propyl vinyl ether, isopropyl vinyl ether, 2-ethylhexyl vinyl ether, cyclohexane dimethanol divinyl ether, and the like. . When the compound having the above chemical bond is used as a flux activator, it is preferable because it can thermally dissociate at a temperature higher than a desired temperature to express a carboxyl group, react with an epoxy resin, and further improve pot life and solder connectivity. Used for. These may be used alone or in combination of two or more.

  The content of the flux activator in the resin composition is preferably 0.5 to 10% by weight, more preferably 1 to 5% by weight from the viewpoints of heat resistance and solder connectivity.

  The curing accelerator which is the component (D) contained in the resin composition of the present invention is represented by the general formula (I):

And X _{1 to} X ₅ are hydrogen, an alkyl group having 1 to 9 carbon atoms, or fluorine, which may be the same or different from each other. Specific examples include tetraphenylphosphonium tetra (4methyl-phenyl) borate, tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra (4fluoro-phenyl) borate, and the like. These may be used alone or in combination of two or more.

  The maximum particle size of the curing accelerator is 30 μm or less, preferably 20 μm or less, more preferably 10 μm or less, from the viewpoints of curability and solder connectivity. In addition, the standard deviation of the average particle diameter is 5 μm or less, preferably 2 μm or less, more preferably 1 μm or less. Here, the maximum particle diameter in the present specification represents the maximum particle diameter detected by the laser diffraction / scattering equation, and the standard deviation is the following formula:

This is a value obtained by quantifying the extent of the particle distribution.

  The curing accelerator having the standard deviation of the maximum particle size and the average particle size in the above range is, for example, a commercially available compound represented by the general formula (I) so as to have a desired particle size distribution in a mortar, jet mill, bead mill or the like. It can be prepared by pulverizing. The pulverization conditions vary depending on the compound used, pulverization equipment, and the like, and thus cannot be generally specified, and are appropriately set so as to obtain a desired particle size distribution.

  By providing a curing accelerator composed of particles having a particle size distribution as described above in the resin composition, a rapid curing after preparation can be suppressed, and a resin composition having an excellent pot life is provided. can do.

  The content of the curing accelerator in the resin composition is not particularly limited as long as the curability and solder connectivity of the desired semiconductor sealing resin composition are not hindered, but 100 parts by weight of the phenol resin as component (B) The amount is preferably 0.1 to 5 parts by weight, more preferably 0.5 to 3 parts by weight.

  In addition, the resin composition of the present invention may optionally include an inorganic filler, a reactive diluent such as 1,6 hexanediol diglycidyl ether, a silane coupling agent, a titanium cup, from the viewpoint of reducing the stress of the cured product. Ring traps, surface conditioners, antioxidants, tackifiers, silicone oils, silicone rubbers, synthetic rubbers, ion trapping agents such as hydrotalcites and bismuth hydroxide from the viewpoint of improving the moisture resistance reliability of semiconductor devices Can be added. These may be used alone or in combination of two or more. What is necessary is just to adjust suitably content of these additives in the range in which the desired effect of each additive is acquired.

  The resin composition of the present invention can be prepared, for example, as follows. That is, a predetermined amount of an epoxy resin, a phenol resin, and a flux activator are mixed, and if necessary, other components are appropriately added, and melt-mixed in advance using a homomixer or the like at a temperature equal to or higher than the softening point of each material. The temperature of the obtained molten mixture is preferably maintained at a softening point of the phenol resin (hereinafter sometimes referred to as Mp (H)) + 20 ° C. or lower, more preferably Mp (H) or lower, with a predetermined amount (D ) Ingredients are added and stirred and dispersed with a homodisper. Next, this is filtered using a filter, and then degassed under reduced pressure, whereby the intended semiconductor sealing resin composition can be produced.

  The reaction exothermic peak temperature at a heating rate of 10 ° C./min in the differential calorimetry of the resin composition of the present invention prepared as described above is 170 to 250 ° C. from the viewpoint of storage stability and solder connectivity. Is preferable, and it is preferable that it is 180-250 degreeC. Here, differential calorimetry means that the energy required to keep the temperature difference between the two is zero over time or temperature under the same condition while adjusting the sample and reference material by heating or cooling. The recording exothermic peak temperature is the temperature at which the energy required to keep the temperature difference at zero is maximum.

  As shown in FIG. 1, the semiconductor device sealed with the resin composition of the present invention has a structure in which a semiconductor element 3 is mounted on one side of a printed circuit board 1 via a plurality of protruding electrodes 2. Further, a sealing resin layer 4 is formed between the printed circuit board 1 and the semiconductor element 3.

  The material of the printed circuit board 1 is not particularly limited, but is roughly divided into a ceramic substrate and a plastic substrate. Examples of the plastic substrate include an epoxy substrate such as a glass epoxy substrate, a bismaleimide triazine substrate, and a polyimide substrate. Can be mentioned.

  The plurality of protruding electrodes 2 that electrically connect the printed circuit board 1 and the semiconductor element 3 may be disposed in advance on the surface of the wired circuit board 1 or disposed on the surface of the semiconductor element 3. Also good. Furthermore, it may be previously arranged on both the surface of the printed circuit board 1 and the surface of the semiconductor element 3.

  The material of the plurality of protruding electrodes 2 is not particularly limited, and examples thereof include low melting point and high melting point solder, tin, silver-tin, and the electrodes on the printed circuit board are made of the above materials. For things, gold, copper, etc. may be used.

  The semiconductor element 3 is not specifically limited, What is normally used can be used. For example, various semiconductors such as elemental semiconductors such as silicon and germanium, and compound semiconductors such as gallium arsenide and indium phosphide are used.

  In the semiconductor device formed by sealing using the resin composition of the present invention, as described above, the sealing resin layer is formed by interposing the resin composition between the printed circuit board and the semiconductor element. It is manufactured by. Here, application | coating of a resin composition may be performed on a wiring circuit board, and may be performed on a semiconductor element. An example of an embodiment of a method for manufacturing a semiconductor device of the present invention will be described in order with reference to the drawings.

  For application of the resin composition to the printed circuit board, first, as shown in FIG. 2, the molten resin composition 5 of the present invention heated to, for example, 40 ° C. is potted on the wired circuit board 1. Next, as shown in FIG. 3, the semiconductor element 3 provided with the plurality of protruding electrodes 2 is placed at a predetermined position on the resin composition, and the resin composition 5 is further melted on the heating stage. 3, the protruding electrode 2 pushes the molten resin composition 5 so that the wiring circuit board 1 and the protruding electrode 2 come into contact with each other, and the molten state is formed in the gap between the semiconductor element 3 and the wiring circuit board 1. After filling the resin composition, metal connection by solder reflow is performed, and then the resin composition is cured to form the sealing resin layer 4 to seal the voids. The curing temperature of the resin composition is usually preferably 130 to 200 ° C. In this way, the semiconductor device shown in FIG. 1 is manufactured.

  The manufacturing method of the semiconductor device has been described for the case where the semiconductor element 3 provided with the plurality of protruding electrodes 2 is used. However, the present invention is not limited to this, and the plurality of protruding electrodes 2 are arranged on the printed circuit board 1 in advance. You may use what was provided.

  The thickness and weight of the resin composition 5 fill the size of the semiconductor element 3 to be mounted and the size of the protruding electrode provided on the semiconductor element 3, that is, the gap between the semiconductor element 3 and the printed circuit board 1. It is set appropriately depending on the volume occupied by the sealing resin layer 4 formed by sealing.

  In the method for manufacturing a semiconductor device, the heating temperature when the resin composition 5 is heated and melted to obtain a molten state is the heat resistance of the semiconductor element 3 and the printed circuit board 1, the melting point of the connection electrode 2, and the resin composition. It is appropriately set in consideration of the softening point, heat resistance, etc. of the object 5.

  EXAMPLES Hereinafter, although an Example is given and this invention is demonstrated further, this invention is not limited at all by this Example.

  The raw materials used in the examples and comparative examples are summarized below.

(1) Epoxy resin As an epoxy resin,
(A) Bisphenol F type epoxy resin (epoxy equivalent: 158 g / eq, viscosity: 1240 mPa · s / 50 ° C), or (b) Naphthalene type epoxy resin (epoxy equivalent: 141 g / eq, viscosity: 560 mPa · s / 50 ° C) )
Was used.

(2) Phenolic resin As phenolic resin,
(A) phenol novolac resin (hydroxyl equivalent: 104 g / eq, softening point: 63 ° C.) or (b) phenol novolac resin (hydroxyl equivalent: 103 g / eq, softening point: 50 ° C.)
Was used.

(3) Flux activator As a flux activator,
(A) adipic acid-isopropyl vinyl ether adduct (acid equivalent: 160 g / mol, dissociation temperature: 170 ° C.) or (b) adipic acid-cyclohexanedimethanol divinyl ether polymer (acid equivalent: 270 g / mol, average molecular weight ( Mn): 1300, dissociation temperature: 200 ° C)
Was used.

(4) Curing accelerator As a curing accelerator,
(A) tetraphenylphosphonium tetra (4methyl-phenyl) borate,
(B) tetraphenylphosphonium tetraphenylborate,
(C) tetraphenylphosphonium tetra (4 fluoro-phenyl) borate,
(D) Triphenylphosphine or (e) 2-phenyl-4,5-dihydroxydimethylimidazole was used.

(5) Reactive diluent 1,6 hexanediol diglycidyl ether (epoxy equivalent: 116 g / eq, viscosity: 12 mPa · s / 25 ° C.) was used as the reactive diluent.

  Below, the evaluation method in an Example and a comparative example is shown collectively.

(1) Particle dispersibility of curing accelerator In order to evaluate the particle dispersibility of the curing accelerator in the obtained resin composition, the spectrophotometer (Shimadzu Corporation) puts the resin composition in a quartz cell having an optical path length of 10 mm. Manufactured by: UV3101PC) and measured according to the following evaluation criteria.
〔Evaluation criteria〕
Transmittance less than 80%: ○
Transmittance 80% or more: ×

(2) Pot life The viscosity immediately after the preparation of the obtained resin composition and the viscosity after standing for 24 hours at 40 ° C. were measured using an E-type viscometer (manufactured by HAAKE: RS-1). The measurement was performed at 40 ° C. at a rotating plate diameter of 35 mm, a gap of 100 μm, and a rotational speed of 10 (1 / s). The resulting value is then expressed by the following formula:
Rate of change (%) = (V (24) -V (0)) x 100 / V (0)
V (24): Viscosity when left at 40 ° C for 24 hours
V (0): It was applied to the viscosity at 40 ° C. immediately after preparation, and the obtained value was evaluated according to the following evaluation criteria.
〔Evaluation criteria〕
Change rate less than 20%: ○
Change rate is 20% or more: ×

(3) Reaction exothermic peak temperature A differential scanning calorimeter (manufactured by Perkin Elmer: PYRIS1) was used to measure the resin composition at 10 mg and a heating rate of 10 ° C./min.

(4) Moisture resistance reliability The resin composition immediately after preparation was coated on a printed circuit board (copper wiring width / wiring interval: 50 μm / 50 μm, comb type). This was cured for 60 minutes at 175 ° C. to obtain a sample for evaluation. Insulation resistance measured using an ion migration evaluation system AMI-075 (manufactured by Tabay Espec Co., Ltd.) by applying an AC voltage of 5.5 volts to the copper wiring under high temperature and humidity conditions of 100% at 121 ° C. The time when the value became 1.0E + 5 (Ω) or less was confirmed and evaluated according to the following evaluation criteria.
〔Evaluation criteria〕
100 hours or more: ○
Less than 100 hours: ×

(5) Solder connectivity The poorly connected bumps of the obtained semiconductor device (n = 10) were counted and evaluated according to the following evaluation criteria.
〔Evaluation criteria〕
Without poorly connected protruding electrode: ○
With poorly connected protruding electrode: ×

Production Example 1 Production of Curing Accelerator Having Predetermined Particle Size Distribution As shown in Table 1, the curing accelerators (a) to (e) were used using a jet mill (Nippon Pneumatic Kogyo Co., Ltd .: PJM-80SP) Crushing accelerators (A) to (G) having various particle size distributions were prepared. The particle size distribution was measured using a laser diffraction / scattering particle size distribution measuring device (Horiba, Ltd .: LA-910).

Examples 1-10 and Comparative Examples 1-3
Each raw material shown in Tables 2 to 4 was melt-mixed using a homomixer (manufactured by Tokushu Kika Kogyo Co., Ltd .: TK homomixer model M) at the ratio shown in the same table, and then a 400 mesh filter was used. And filtered at 70 ° C. Thereafter, degassed under reduced pressure at 3.3 × 10 ⁻³ MPa for 60 minutes at 70 ° C., and this was cooled at room temperature to prepare a resin composition. About the obtained resin composition, hardening accelerator particle dispersibility, reaction exothermic peak temperature, pot life, and moisture resistance reliability were evaluated according to said evaluation method. The values are shown in Tables 2-4. The melt mixing was performed as follows.

Melt mixing First, an epoxy resin, a phenol resin, a flux activator, and a reactive diluent were charged and mixed at 70 ° C. for 10 minutes at 1000 rpm to sufficiently disperse or dissolve the solid content. Next, after adjusting to a temperature of 60 ° C., a curing accelerator was added and mixed for 10 minutes at 3000 rpm.

Comparative Example 4
A curing accelerator-containing phenol resin was prepared by mixing 0.64 g of the curing accelerator (A) and 100 g of the phenol resin (a) at 150 ° C. for 1 hour.

Next, each raw material shown in Table 4 was mixed at a rate shown in the same table using a homomixer (manufactured by Tokushu Kika Kogyo Co., Ltd .: TK homomixer model M) at 70 ° C. for 10 minutes at 1000 rpm, and then 400 It filtered at 70 degreeC using the filter of the mesh. Thereafter, defoaming was performed under reduced pressure at 3.3 × 10 ⁻³ MPa for 60 minutes at 70 ° C., and this was cooled at room temperature to prepare a resin composition. About the obtained resin composition, hardening accelerator particle dispersibility, reaction exothermic peak temperature, pot life, and moisture resistance reliability were evaluated according to said evaluation method. The values are shown in Table 4.

Examples 11-20 and Comparative Examples 5-8
A semiconductor device (corresponding to the semiconductor device shown in FIG. 1) was prepared by using the resin compositions of Examples 1 to 10 and Comparative Examples 1 to 4 obtained as described above and the semiconductor device manufacturing method described above. Manufactured. That is, the resin composition was heated to 40 ° C. and potted in a molten state on a printed circuit board (glass epoxy board thickness: 1 mm). This was placed on a stage heated to 120 ° C., and a semiconductor element (thickness: provided with connection electrodes (lead-free solder: melting point 220 ° C., electrode height: 80 μm)) at a predetermined position on the resin composition. When mounting a semiconductor element (temperature 120 ° C, pressure = 5.0 × 10 ^-3 N / electrode, time = 1 second) using a flip chip bonder (manufactured by Kyushu Matsushita: FB30T-M) (600μm, size 10mm × 10mm) At the same time, the resin was sealed. Thereafter, solder melting was performed at 220 ° C. for 10 seconds to manufacture a semiconductor device. The obtained semiconductor device was post-cured with a resin composition at 175 ° C. for 60 minutes using a drying furnace (manufactured by Tabai Espec Corp .: PHH-100) to obtain the intended semiconductor device.

  The obtained semiconductor device was evaluated for solder connectivity. The results are shown in Table 5.

  From Tables 2 to 5, the resin compositions obtained in the examples were present as solid particles in the resin composition without being compatible with the curing accelerator, and even after being left at 40 ° C. for 24 hours, It was confirmed that there was no significant change in viscosity compared to the viscosity, the moisture resistance reliability was good, and the semiconductor devices obtained in the examples had good solder connectivity. On the other hand, the resin composition obtained in Comparative Example 1 is good when used in a semiconductor device because the curing accelerator is present as solid particles in the resin composition but its particle size is large. Solder connectivity could not be obtained. On the other hand, in the resin compositions obtained in Comparative Examples 2 to 4, the curing accelerator was compatible with the resin composition, and the viscosity after standing at 40 ° C. for 24 hours changed greatly, and 24 hours after preparation. It turns out that the subsequent resin composition cannot be used for manufacture of a semiconductor device. Furthermore, although the moisture resistance reliability of the resin composition obtained in Comparative Example 2 was good, since the reaction exothermic peak temperature was low, when used in a semiconductor device (Comparative Example 6), good solder connectivity was not obtained. . Furthermore, in Comparative Example 3, good moisture resistance reliability was not obtained.

  Therefore, it was confirmed that the example maintained a stable viscosity for a long time and had excellent moisture resistance reliability and solder connectivity as compared with the comparative example.

  The present invention can be used to seal a gap between a printed circuit board and a semiconductor element in the semiconductor industry.

1 illustrates one embodiment of a semiconductor device of the present invention. An example of process explanatory drawing of the manufacturing method of the semiconductor device of this invention is shown. An example of process explanatory drawing of the manufacturing method of the semiconductor device of this invention is shown.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Wiring circuit board 2 Projection electrode 3 Semiconductor element 4 Sealing resin layer 5 Resin composition

Claims (4)

For use in no-flow manufacturing of semiconductor devices,
(A) an epoxy resin having two or more epoxy groups in one molecule;
(B) a phenolic resin having two or more hydroxyl groups in one molecule;
(C) a flux activator, and (D) the following general formula (I):

(Wherein, X _{1 to} X ₅ are hydrogen, an alkyl group having 1 to 9 carbon atoms, or fluorine, which may be the same as or different from each other)
A resin composition for encapsulating a semiconductor comprising a curing accelerator comprising particles having a maximum particle size of 30 μm or less and a standard deviation of an average particle size of 5 μm or less, the epoxy of (A) A semiconductor encapsulant obtained by melt-mixing a resin, a component containing the phenol resin of (B), and the flux activator of (C), and then dispersing the curing accelerator of (D) in the resulting melt mixture. Resin composition for stopping . The component (C) is represented by the following general formula (II):

The resin composition for semiconductor encapsulation according to claim 1, wherein the compound has a chemical bond represented by the formula:   The resin composition for semiconductor encapsulation according to claim 1 or 2, wherein a reaction exothermic peak temperature in differential calorimetry is 170 ° C to 250 ° C.   A semiconductor device sealed with the semiconductor sealing resin composition according to claim 1.

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