JP4421927B2 - Catalyst body storage container for thin film manufacturing apparatus, reaction gas supply method from the catalyst body storage container, and thin film manufacturing apparatus - Google Patents

Description

The present invention, catalyst storage container for thin-film deposition apparatus, this relates to supply a method and a thin film production apparatus of the reaction gases from the catalytic body storage container, in particular, contacting the reaction gas to the heated catalyst by activating, the active A catalyst body storage container for a thin film manufacturing apparatus for forming a thin film by causing a film forming gas consisting of a reaction gas and a raw material gas to reach a substrate in the reaction chamber, a method for supplying the reaction gas from the catalyst body storage container, and The present invention relates to a thin film manufacturing apparatus .

  In recent years, among thin film manufacturing apparatuses using chemical vapor deposition, an apparatus using a catalytic body (catalyst CVD apparatus) as an apparatus for manufacturing a thin film suitable for a semiconductor device that requires high integration and high functionality is required. Attention has been paid. The catalytic CVD apparatus is activated by bringing a reaction gas into contact with a heated catalyst body and causing a film forming gas composed of the activated reaction gas and a raw material gas to reach a substrate held in the reaction chamber. Is a device for forming a thin film. Therefore, it is not necessary to heat the substrate by introducing the reaction gas activated by the heated catalyst body into the reaction chamber as compared with the thermal CVD apparatus that causes the reaction only by the heat of the substrate, and the temperature of the substrate. Is excellent in that the substrate is not damaged by the plasma, which is a problem in the plasma CVD apparatus.

  Even when this catalyst CVD apparatus is used, there has been a problem that the substrate is heated by the radiation of the heated catalyst.

  Therefore, conventionally, as a method and apparatus for solving this problem, a shutter is provided at an optically shielded position between the catalyst body and the substrate until the catalyst body is maintained at a predetermined high temperature (for example, (See Patent Document 1.) In the reaction chamber, the catalyst body is arranged in the internal space of the catalyst body container, and the surface of the catalyst body container that opposes the substrate, that is, a shower plate, shields radiation from the catalyst body to the substrate. Has been proposed (see, for example, Patent Document 2).

  However, even though the shutter and the shower plate can prevent the radiation of the catalyst body, there has been a problem that the raw material gas comes into contact with the catalyst body and generates particles.

  Therefore, in the invention filed on the same day as the present application, the present applicant connects the catalyst body storage container provided with the reaction gas supply system and the reaction chamber provided with the raw material gas supply system and the inert gas supply system, In order to provide a medium storage container and a reaction chamber separately and independently, a thin film manufacturing apparatus is proposed in which a valve is interposed between the catalyst body storage container and the reaction chamber.

  According to this invention, the catalyst body storage container and the reaction chamber can be separately provided by the valves, so that the substrate temperature can be prevented from rising due to the radiation of the catalyst body heated during the film formation.

  By the way, whether the film formation efficiency in the thin film production using the catalyst body is good or not depends on how much reaction gas activated by the heated catalyst body reaches the substrate.

  Since the activated reaction gas has the property of being easily deactivated, in order to make the activated reaction gas reach the substrate as much as possible, it is conceivable to dispose the catalyst body near the substrate. .

  However, when the heated catalyst body is arranged near the substrate, the above problem of radiation of the catalyst body occurs. On the other hand, if the distance between the heated catalyst body and the substrate is increased, there arises a problem that the film formation efficiency is lowered.

Therefore, conventionally, in order to increase the film forming efficiency by increasing the contact area between the catalyst body and the reaction gas to obtain a large amount of the catalyst body action, the shape of the catalyst body is strip-shaped. What was formed in the board | plate material or foil material was proposed (for example, refer patent document 3).
JP-A 2000-299313 (claim 1) JP-A-11-54441 (claim 1) JP-A-2000-73172 (claim 1)

  However, if the catalyst body is stored in a catalyst body storage container independent of the reaction chamber, radiation from the heated catalyst body to the substrate can be prevented, but the reaction gas is lost because the distance from the substrate is increased. There was a problem that the activity increased and the film formation efficiency decreased.

  In this regard, the present inventor proposes that the invention, which was filed on the same day as the present application, is formed of a material that is hardly deactivated, such as quartz, until the activated reaction gas is introduced into the reaction chamber. However, it is considered that the film formation efficiency can be further improved by devising such that a large amount of catalytic action can be obtained.

  On the other hand, in order to improve the action of the catalyst body, the above-mentioned conventional technique that increases the contact area between the catalyst body and the reaction gas increases the cross-sectional area of the catalyst body, so that the resistance decreases and the catalyst body is heated to a predetermined temperature. There has been a problem that a large amount of power is required to do this.

  In particular, from the standpoint of energy efficiency, it is important that more reactive gas is in contact with the catalyst body whose resistance is increased by reducing the cross-sectional area.

  In addition, an increase in current value due to a decrease in resistance is unsuitable for a mass production machine because the cost of the device such as a power supply and a cable is increased, and the safety specifications of the entire device must be changed.

The present invention has been made in view of the above problems, prevents the radiation to the substrate by the catalyst body, good film-forming efficiency, thin-film deposition apparatus for catalyst container rich in mass production, the reaction from the catalyst container It is an object to provide a gas supply method and a thin film manufacturing apparatus .

In order to solve the above-described problems, a catalyst body storage container for a thin film production apparatus according to the present invention is activated by bringing a reaction gas into contact with a heated catalyst body, and comprising the activated reaction gas and raw material gas. In a catalyst body storage container for a thin film manufacturing apparatus having a reaction chamber for performing a film forming process on a substrate with a film gas, the catalyst body storage is provided with a reaction gas supply system and installed independently via the reaction chamber and a valve. The container is formed such that the inner space thereof is gradually narrowed toward the outlet direction of the activated reaction gas, and the catalyst body is disposed at a position where the space is gradually narrowed. Features.

According to this configuration, since the catalyst body is stored in the catalyst body storage container provided independently of the reaction chamber, the heated catalyst body can be made independent from the substrate in the reaction chamber, and the outlet of the reaction gas By gradually narrowing, the flow of the reaction gas can be focused . Therefore, by arranging the catalyst body in the gradually narrowed portion , the reaction gas and the heated catalyst body can be contacted with high frequency without increasing the cross-sectional area of the catalyst body. Is possible.

  Examples of the space shape that gradually narrows the outlet of the reaction gas include those formed in a truncated cone shape with the outlet of the reaction gas as a tip, or a shape in which a cylindrical shape and a hemisphere or truncated cone are combined. In addition, there is a hemisphere or a truncated cone with an outlet of a reactive gas at the tip.

By arranging the gas flow rate is fast location near the exit of the upper Kihan response gas the catalyst can be contacted with a more frequent catalyst body is heated and the reaction gas in.

  The shape of the catalyst body needs to have a large surface area so that the cross-sectional area is not increased and the reaction gas can be contacted as frequently as possible. Therefore, for example, the shape of the catalyst body is preferably a spiral shape. At this time, the spiral shape may be a circle or a polygon such as a triangle or a rectangle.

  At this time, if the dimension in the horizontal direction with respect to the winding of the spiral catalyst body is formed so as to decrease toward the outlet of the reaction gas, it is formed so as to gradually narrow toward the outlet of the reaction gas. It is easy to store the catalyst body in the internal space of the catalyst body storage container.

  What is necessary is just to form so that the dimension of a horizontal direction with respect to the winding of this spiral-shaped catalyst body may become small at least for every turn.

  In order to prevent the reaction gas from flowing into the space formed between the inner wall of the catalyst body storage container and the catalyst body and reducing the probability of contact between the heated catalyst body and the reaction gas, the shape of the catalyst body is changed. What is necessary is just to form in the shape substantially the same as the space shape through which a reactive gas flows in a catalyst body storage container.

The material forming the inner wall of the catalyst container, the valve, and the reaction gas inlet is a material that reduces the deactivation of the activated reaction gas, for example, high purity ceramic such as quartz or high purity Al ₂ O ₃ Is desirable.

Further, in order to solve the above-mentioned problems, a method for supplying a reaction gas from the catalyst body storage container according to the present invention is activated by bringing a reaction gas into contact with a heated catalyst body and activating the reaction gas. When the thin film is manufactured by performing the film forming process on the substrate with the film forming gas composed of the raw material gas, the catalyst body stored in any of the above catalyst body storing containers is heated and the catalyst body stored A reaction gas is supplied into the container to be activated, and the activated reaction gas is supplied to a reaction chamber connected to the catalyst body storage container through a valve.
The thin film production apparatus according to the present invention includes any one of the above-described catalyst body storage containers.

As it is clear from the above description, the catalyst body storage container for thin film manufacturing apparatus according to the present invention, supply method and a thin film production apparatus of the reaction gases from the catalyst storage vessel, catalyst storage container for accommodating the catalyst Since the space is formed in a shape that collects the reaction gas, and the catalyst body is disposed at the location where the reaction gas collects, the generation efficiency of the activated reaction gas can be improved.

  Furthermore, by forming the shape of the catalyst body so as not to increase the cross-sectional area of the catalyst body, the resistance value increases, so the current value can be lowered, so the cost of the power supply, cables, etc. can be suppressed. Therefore, it can be expected as a mass production machine from the conventional equipment.

  FIG. 1 shows a thin film manufacturing apparatus provided with a catalyst body storage container of the present invention. In the reaction chamber 1 of this thin film manufacturing apparatus, a shower head 2 is provided on the upper surface of the inner wall for allowing the gas to uniformly reach the substrate. In the reaction chamber 1, there is a substrate holder 3 at a position facing the shower head 2. For the thin film, the substrate is placed on the substrate holder 3 by a carry-in device (not shown), the raw material gas is introduced into the reaction chamber 1 from the raw material gas supply system 4 through the valve 41, and passes through the shower head 2. The raw material gas is made to reach the substrate. At this time, the inert gas from the inert gas system 5 is also introduced into the reaction chamber 1 through the valve 51 in the same manner as the raw material gas.

  The source gas generation method includes, for example, a method of gasifying a solid or liquid organometallic material. That is, when this organometallic material is a solid, there are a method in which the solid is heated and liquefied and then sent to a vaporizer, vaporized, sent to a bubbling system and foamed, or a solid is directly sublimated. In the case of a liquid, there are a method of sending the liquid to a vaporizer and a method of sending it to a bubbling system and a method of foaming.

  When the reaction gas is introduced into the reaction chamber 1 from the reaction gas supply system 6 via the valve 61, it is necessary to contact a catalyst body (not shown) heated by a power source or the like in order to activate the reaction gas. . However, when the catalyst body is heated inside the reaction chamber 1, the substrate is heated by the radiation of the heated catalyst body, which causes problems such as inhibiting the production of a stable thin film.

  Therefore, in order to install the catalyst body independently from the reaction chamber 1, the catalyst body storage container 7 is provided, the catalyst body storage container 7 and the reaction chamber 1 are connected by the reaction gas supply path 62, and the reaction gas supply path is provided. The valve 61 may be interposed in 62. With such a configuration, the heat of the heated catalyst body does not reach the substrate, and a stable thin film can be manufactured.

At the time of loading / unloading the substrate, the introduction of the gas into the reaction chamber 1 must be stopped and the by-products and surplus gas must be exhausted. Therefore, these gases are exhausted from the reaction chamber 1 to the exhaust system 9 via the pressure adjustment valve 8. The catalyst body storage container 7 and the exhaust system 9 are connected by a gas exhaust path 64 with a valve 63 interposed therebetween .

  By the way, as described above, since the introduction of gas into the reaction chamber 1 is stopped at the time of loading / unloading the substrate, the change in gas amount and the catalyst body temperature immediately after restarting the film forming process after loading / unloading the substrate. Changes, which hinders the generation of stable film formation.

  Therefore, a temperature adjustment device (not shown) for adjusting the electric power for heating the catalyst body by sensing the temperature change in the catalyst body storage container 7 and converting the signal and feeding back this signal to the control computer, and the catalyst body storage container 7 is provided with a pressure control device (not shown) for detecting a pressure change in the catalyst body container 7 by sensing a pressure change in the body 7 and converting the signal and feeding back this signal to a control computer. The gas amount in the storage container 7 and the temperature of the catalyst body can be maintained in an optimal state, and the reaction gas activated from the initial stage of film formation can be stably supplied. In this case, a viewing window (not shown) may be provided in the catalyst body container 7 for monitoring.

  That is, the valve 61 interposed between the reaction gas supply path 62 connecting the catalyst body storage container 7 and the reaction chamber 1 when loading / unloading the substrate is closed, and the reaction gas supply system 6 is placed in the catalyst body storage container 7. The reaction gas is introduced into the reaction chamber 1 and the optimum state is maintained by the temperature adjusting device and the pressure control device. After a new substrate is loaded, the valve 61 is opened and the reaction gas activated in the optimum state immediately enters the reaction chamber 1. Can be introduced.

  Referring to FIG. 2A, reference numeral 7 denotes the catalyst body storage container. The catalyst body storage container 7 is configured by joining a flange 72 to a cylindrical metal water cooling chamber 71. In the approximate center of the flange 72, a reaction gas inlet 721 is opened. An activated reaction gas outlet 711 is opened on the side surface of the metal water cooling chamber 71 opposite to the side to which the flange 72 is joined.

  A quartz inner wall 73 is fitted in the metal water cooling chamber 71. A cylindrical space is formed inside the quartz inner wall 73. This columnar space is gradually narrowed in a frustoconical shape from the middle toward the reaction gas outlet 711 and communicates with the outlet 711.

  The inlet 721 side of the quartz inner wall 73 is cut off from the flange 72 by interposing a circular quartz plate 74. Accordingly, the internal space of the metal water cooling chamber 71 is surrounded by the quartz inner wall 73 except for the outlet 711.

The reason why quartz is used as the inner wall material is to reduce the deactivation of the reaction gas, and the material is not limited to quartz as long as it has an effect of reducing the deactivation. For example, other than quartz, high purity ceramics such as high purity Al ₂ O ₃ can be considered.

  FIG. 2B is a cross-sectional view of the quartz plate 74 taken along the line AA in FIG. The quartz plate 74 is provided with two openings 741 that are equidistant from the center on a straight line passing through the center. Quartz pieces 742 are inserted into the two openings 741, respectively.

  Each of the quartz pieces 742 has a hole 742a in the center and a slit 742b in the circumferential direction.

  From the outside of the flange 72, the current introduction terminal 75 passes through the flange 72, passes through the hole 742 a of the quartz piece 742, and passes through the internal space of the quartz inner wall 73. A slightly larger nut 76 is attached to the tip of the current introduction terminal 75, and a wire-shaped catalyst body 77 is fixed by the nut 76. The catalyst body 77 is formed in a spiral shape in accordance with the frustoconical shape in a space where the quartz inner wall 73 is formed in the frustoconical shape.

  Hereinafter, a process for introducing and activating the reaction gas into the catalyst body storage container 7 of the catalyst body 77 will be described.

  A current is supplied from a power source (not shown) to the current introduction terminal 75 to energize the catalyst body 77 to heat the catalyst body 77. Next, a reactive gas is introduced into the inlet 721 from a reactive gas system (not shown). The introduced reaction gas hits substantially the center of the quartz plate 74, and the flow velocity is reduced. The reaction gas is diffused into the space between the quartz plate 74 and the flange 72, and the flow velocity becomes uniform. The reaction gas having a uniform flow velocity is introduced into the space surrounded by the quartz inner wall 73 through the slit 742 b of the quartz piece 742. The reaction gas introduced into the space from the slit 742b hits the nut 76 and diffuses in the space. The diffused reaction gas comes into contact with the heated catalyst body 77, is activated, and is introduced into the reaction chamber (not shown) from the outlet 711. For reference, the flow of the reaction gas is indicated by an arrow in FIG.

  A metal water cooling chamber 71 is provided with a viewing window (not shown) for monitoring, and a monitor temperature signal is fed back to a control computer (not shown) to adjust the power source power of the power source for heating the catalyst body. Also good.

  In addition, a pressure gauge for monitoring the pressure in the inner space of the quartz inner wall 73 is mounted near the inlet 721 (not shown), and the monitored pressure signal is fed back to the apparatus control computer to monitor the pressure abnormality. Also good.

  FIG. 3 shows the fluid analysis result of the reaction gas vector in the internal space of the quartz inner wall 73.

  FIG. 3A shows the fluid analysis result of the reaction gas vector toward the outlet direction. The vector indicates that the direction of the reaction gas toward the outlet 711 is positive and the flow becomes stronger as the color changes from yellow to red. ing. On the other hand, the direction opposite to the outlet 711 is minus, indicating that the flow becomes stronger as the color changes from green to blue.

  The reaction gas hits the nut 76 and spreads in the space. In the vicinity of the nut 76, turbulence occurs, but in the frustoconical space, the red color is dark, so that the flow is in the plus direction, and the flow gradually increases toward the outlet 711. .

  (B) of FIG. 3 is a fluid analysis result of the reaction gas vector toward the center line of the frustoconical space, and the vector is positive in the direction from the center line of the frustoconical space to the outer periphery. The direction from the outer circumference toward the center line is negative. The color change indicating the strength of the flow is the same as in the case of FIG.

  In this case, in the frustoconical space, since the blue is darker toward the center line, it can be seen that the flow of the reactive gas is stronger toward the center line.

  From the above analysis results, it can be seen that in the frustoconical space, the flow of the reaction gas gathers in the direction of the centerline of the cone and gradually becomes stronger toward the outlet 711.

  As described above, when the space in the catalyst body storage container 7 is formed so as to be gradually narrowed in the direction of the reaction gas outlet 711, the reaction gas collects in the narrowed portion. Production efficiency is improved.

  In the present embodiment, the shape is a combination of a column and a truncated cone. However, the shape is not limited to this shape as long as it is formed in a truncated cone shape having the reaction gas outlet 711 as a tip. . Alternatively, for example, a hemisphere and a cylindrical shape may be combined, and a reaction gas outlet 711 may be opened at the tip of the hemisphere.

  Further, the position where the catalyst body 77 is arranged is preferably a place where the reaction gas is easily collected and the flow velocity is high.

  In the present embodiment, the catalyst body 77 is formed in a circular spiral shape so that the dimension in the horizontal direction with respect to the winding of the catalyst body 77 decreases toward the reaction gas outlet 711 for each turn. However, it is not intended to be limited to this shape. For example, the dimension in the horizontal direction with respect to the spiral winding may be formed so as to become smaller for each plurality of windings, and the shape may be a polygon such as a triangle or a quadrangle.

  By the way, if the space formed between the quartz inner wall 73 and the catalyst body 77 is large, the reaction gas flows into the space, and the probability that the heated catalyst body 77 and the reaction gas come into contact with each other is reduced. Therefore, it is preferable to keep the distance between the catalyst body 77 and the quartz inner wall 73 as narrow as possible. In this case, as in the present embodiment, when the space in the catalyst body storage container 7 is formed so as to become gradually narrower in the direction of the reaction gas outlet 711, the distance between the quartz inner wall 73 and the catalyst body 77 is reduced. Is kept as narrow as possible. The shape of the catalyst body 77 is formed in a shape substantially similar to the shape of the space through which the reaction gas flows. Eventually, the reaction gas easily collects and the catalyst body 77 is disposed at a high flow rate.

In this example, a TaN film was formed by the thin film manufacturing apparatus 1 of FIG. 1 provided with the catalyst body storage container 7 shown in FIG. The film forming conditions were as follows: PEMAT: Ta [N (CH ₃ ) (C ₂ H ₅ )] ₅ that is liquid at room temperature as a raw material, 0.7 mg / min, carrier gas N ₂ at 500 sccm, and reactive gas NH ₃ at 200 sccm, min. The pressure adjustment / assist gas Ar was used at 460 sccm, the film formation pressure was always adjusted to 1 Torr constantly by the pressure adjustment valve, and the substrate temperature was 318 ° C. Here, the assist gas is for quickly expelling the source gas and the reaction gas from the reaction chamber and minimizing the change in the pressure in the reaction chamber to reduce the change in the substrate temperature.

PEMAT was vaporized using a vaporization system. In the vaporizer, a raw material gas is generated by a mixed gas of carrier gas N ₂ (which assists atomization of PEMAT and also serves as a carrier) and vaporized PEMAT.

On the other hand, the reaction gas NH ₃ was introduced into the catalyst body storage container 7, and NH ₃ was activated by the heated catalyst body 77 and introduced into the reaction chamber 1.

  The substrate was placed on the substrate holder, and a film forming gas was introduced into the reaction chamber 1.

  In this example, the deposition gas was introduced in the order of the source gas, the assist gas, the activated reaction gas, and the assist gas, and this cycle was repeated a plurality of times. A Ta film was generated with the source gas, impurities in the Ta film were removed by the activated reaction gas, and the Ta film was nitrided to form a TaN film with a thickness of 30 nm.

The analysis result by AES (Auger Electron Spectroscopy / Auger Electron Spectroscopy) of the TaN film generated through the above steps is shown in the graph of FIG. As is apparent from this graph, the TaN film modified by the activated reaction gas (NH ₃ ) after the Ta film containing the impurity is formed by the source gas is almost free of impurities on the surface. It can be seen that a good TaN film was formed.

  In the normal MOCVD method using PEMAT, the nitriding reaction cannot be performed efficiently unless the substrate temperature is set to 400 ° C. or higher. However, in the thin film manufacturing apparatus 1 equipped with the specific catalyst container 7 according to the present invention, the reaction A TaN film could be generated at a low temperature of 318 ° C. by activating the gas.

    According to the present invention, since the generation efficiency of the activated reaction gas can be improved, it is possible to use the highly efficient thin film manufacturing apparatus in the field of thin film manufacturing, particularly in the field of thin film manufacturing using chemical vapor deposition. It can be applied as a catalyst body storage container.

The schematic diagram of the thin film manufacturing apparatus using the catalyst body storage container concerning this invention (A) Side sectional view of the catalyst body storage container (b) Cross section of the quartz plate taken along the line AA of the catalyst body storage container (A) The figure which shows the fluid analysis result of the reaction gas vector which goes to an exit direction (b) The figure which shows the fluid analysis result of the reaction gas vector which goes to the centerline of a cone The graph which shows the analysis result by AES of the TaN film | membrane formed into a film using this apparatus

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Reaction chamber 2 Shower head 3 Substrate holder 4 Raw material gas system 5 Inert gas system 6 Reaction gas system 7 Catalyst body catalyst body storage container 8 Pressure control valve 9 Exhaust system 71 Metal water cooling chamber 72 Flange 73 Quartz inner wall 74 Quartz plate 75 Current introduction terminal 76 Catalyst body

Claims (13)

For a thin film manufacturing apparatus having a reaction chamber in which a reaction gas is brought into contact with a heated catalyst body and activated, and a film forming gas composed of the activated reaction gas and source gas is used to perform a film forming process on a substrate. The catalyst body storage container includes a reaction gas supply system, and is a catalyst body storage container installed independently via the reaction chamber and the valve, the internal space of the catalyst body storage container in the direction of the exit of the activated reaction gas. A catalyst body storage container for a thin film manufacturing apparatus, characterized in that the catalyst body is formed so as to be gradually narrowed toward the narrow side, and the catalyst body is disposed at a position where the width is gradually narrowed.   2. The catalyst body storage container for a thin film manufacturing apparatus according to claim 1, wherein the space shape in the catalyst body storage container is formed in a truncated cone shape having a reaction gas outlet as a tip.   The spatial shape in the catalyst body storage container is a shape in which a cylindrical shape and a hemisphere or truncated cone are combined, and an outlet of the reaction gas is opened at the tip of the hemisphere or truncated cone. The catalyst body storage container for a thin film manufacturing apparatus according to claim 1 or 2, characterized in that: Thin-film deposition apparatus for catalyst container as claimed in any one of claims 3, characterized in that a said catalyst on the gas flow velocity is fast location near the outlet of the reaction gas. Thin-film deposition apparatus for catalyst container as claimed in any one of claims 4, wherein the shape of the catalyst body is a helical shape. 6. The catalyst body storage container for a thin film production apparatus according to claim 5 , wherein the spiral shape of the catalyst body is either a circle or a polygon. The thin film production according to claim 5 or 6 , wherein a dimension in a horizontal direction with respect to the spirally wound catalyst body is formed so as to become smaller toward the outlet of the reaction gas. Catalyst body storage container for equipment. Horizontal dimension relative to the winding of the catalyst body of the spiral-shaped, claim 5, characterized in that one formed to be smaller at least every one turn in any one of claims 7 The catalyst body storage container for thin film manufacturing apparatuses as described. In order to prevent the reaction gas from flowing into the space formed between the inner wall of the catalyst body storage container and the catalyst body and reducing the probability of contact between the heated catalyst body and the reaction gas, the shape of the catalyst body is touched. thin-film deposition apparatus for catalyst container as claimed in any one of claims 8, characterized in that to form the space shape substantially similarly shaped reaction gas flows in the medium storage container. And the catalyst storage container inner wall and the valve and the reaction gas inlet, any one of claims 1 to 9, characterized in that formed in the material to reduce the deactivation of the reaction gas was activated The catalyst body storage container for thin film manufacturing apparatuses as described in 2. The material to reduce the deactivation of the reaction gas was activated quartz or most purity Al ₂ O ₃ thin-film deposition apparatus for a catalyst member housing according to 請 Motomeko 10 you being a high purity ceramic, such as container. Claims when a reaction gas is brought into contact with the heated catalyst body and activated, and a film is formed on the substrate with a film formation gas comprising the activated reaction gas and source gas to produce a thin film. while heating the catalyst body housed in the catalyst container according to any one of claims 1 1 to 1, it is activated by supplying a reaction gas to the catalyst body storage container, this through a valve A method of supplying a reaction gas from a catalyst body storage container, comprising supplying the activated reaction gas to a reaction chamber connected to the catalyst body storage container. The thin film manufacturing apparatus provided with the catalyst body storage container for thin film manufacturing apparatuses of any one of Claims 1-11.

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