JP4418610B2 - Semiconductor device manufacturing method and semiconductor device manufacturing apparatus - Google Patents

Semiconductor device manufacturing method and semiconductor device manufacturing apparatus Download PDF

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Publication number
JP4418610B2
JP4418610B2 JP2001227439A JP2001227439A JP4418610B2 JP 4418610 B2 JP4418610 B2 JP 4418610B2 JP 2001227439 A JP2001227439 A JP 2001227439A JP 2001227439 A JP2001227439 A JP 2001227439A JP 4418610 B2 JP4418610 B2 JP 4418610B2
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Japan
Prior art keywords
tape
lead frame
semiconductor device
heating
manufacturing
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JP2003045904A (en
Inventor
彰一 田中
智之 田中
智行 高下
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Description

【０００１】
【発明の属する技術分野】
本発明は、リードフレームに半導体素子が搭載された半導体装置の封止樹脂による封止工程において、封止前にリードフレームの裏面に貼り付けられたテープを、封止工程後に容易に剥がす半導体装置の製造方法および半導体装置の製造装置に関するものである。
【０００２】
【従来の技術】
従来より、半導体集積回路装置は、半導体素子と金属製の端子となるリ−ドフレ−ムとがボンディングワイヤによって電気的に接続された後、半導体素子とリードフレームのリードとが封止樹脂により保護封止された状態で供給され、プリント基板に実装されていた。
【０００３】
以下、従来の半導体装置の製造方法について説明する。
【０００４】
図５は、従来の半導体装置の製造方法を示す断面図である。
【０００５】
図５に示すように、リードフレーム１の裏面には、封止工程で、封止樹脂２がリードフレーム１の裏面に流出してバリとして形成されないように、テープ３を貼り付けた状態である。このテープ３をリードフレーム１から剥がす工程では、封止樹脂側を加熱ステ−ジ４により機械的に固定し、ヒ−タ熱により昇温して封止樹脂材、リ−ドフレ−ム１およびテープ３を温め、テープ３の接着層５を軟化させ、外力によりリ−ドフレ−ム１とテープ３を分離する。
【０００６】
【発明が解決しようとする課題】
しかしながら、前記従来の半導体装置の製造方法は、封止樹脂材とリ−ドフレ−ムとで熱容量が異なる上、封止樹脂材は熱伝達性も悪いため、接着層が均一に昇温されず、結果として温度の低い部分は接着力が強く残っているため、リ−ドフレ−ムとテ−プを分離する際に高い応力が発生し、テ−プの破断を生じるとともに、リ−ドフレ−ム上への接着層の残留および高応力付加によるリ−ドフレ−ムの破損が発生する。
【０００７】
本発明は、前記従来の半導体装置の製造方法を解決するものであり、テープ側からも加熱することで、リードフレームとテープとの密着力を低下させた状態で、より容易にテープをリードフレームから安定して剥がす半導体装置の製造方法を提供することを目的とする。
【０００８】
【課題を解決するための手段】
前記従来の課題を解決するために、本発明の半導体装置の製造方法は、裏面に封止樹脂漏れ防止用のテープが貼り付けられ、表面に樹脂封止体が形成されたリードフレームの前記樹脂封止体側を加熱ステージに固定する工程と、前記テープ側から加熱しながら前記テープをリードフレームから剥がす工程とからなる。
【０００９】
また、テープ側から加熱しながら前記テープをリードフレームから剥がす工程は、前記テープの表面に加熱ブロックを接触させ移動させながら前記テープを前記リードフレームから剥がす。
【００１０】
また、テープ側から加熱しながら前記テープをリードフレームから剥がす工程は、前記テープに高温の空気を供給しながら前記テープをリードフレームから剥がす。
【００１１】
また、本発明の半導体装置の製造装置は、裏面に封止樹脂漏れ防止用のテープが貼り付けられ、表面に樹脂封止体が形成されたリードフレームの樹脂封止体側を固定する加熱ステージと、前記テープを把持して引っ張る手段と、前記テープ側から加熱する加熱手段とを備えている。
【００１２】
また、加熱手段はテープに密着し、前記テープの剥がす方向に移動する加熱ブロックである。
【００１３】
また、加熱手段はテープ側から高温の空気を供給する手段である。
【００１４】
以上、本発明の半導体装置の製造方法および半導体装置の製造装置は、リ−ドフレ−ム上に搭載された複数の半導体素子を封止樹脂により保護封止するため、リ−ドフレ−ムに貼り付けられた封止樹脂漏れ防止用のテ−プを樹脂封止後の工程にてリ−ドフレ−ムより分離するため、リ−ドフレ−ムを加熱ステージと可動する加熱ブロックにより挟みこみテ−プを分離する。
【００１５】
このようにリ−ドフレ−ムを固定の加熱ブロックと可動する加熱ブロックにより挟みこみテ−プを分離することにより、テ−プ側の温度設定と封止樹脂側の温度設定を個々独立して行なうことを可能とし、テープおよびリ−ドフレ−ムを加熱することにより、リ−ドフレ−ム、テープおよび封止樹脂材の熱変形を均一にし変形量を減少することが可能となる。
【００１６】
また、リ−ドフレ−ムの自動供給、テ−プ分離、自動収納を行なう装置は、リ−ドフレ−ム上に搭載された複数の半導体素子を封止樹脂により保護封止するため、リ−ドフレ−ムに貼り付けられた封止樹脂漏れ防止用のテ−プを、封止後の工程にてリ−ドフレ−ムより分離するため、リ−ドフレ−ムを固定の加熱ステージと可動する加熱ブロックにより挟んでテ−プを分離する。また、リ−ドフレ−ムの自動供給および取出しをする手段を備える。
【００１７】
【発明の実施の形態】
以下、本実施形態の半導体装置の製造装置および半導体装置の製造方法の一実施形態について、図面を参照しながら説明する。
【００１８】
図１は、本実施形態の半導体装置の製造方法に相当する工程を含む一連の工程を示すフロー図である。
【００１９】
図１に示すように、リードフレームに搭載した半導体素子を封止樹脂で封止（封止工程、アニールキュア工程）した後、リードフレームの裏面に貼り付けられたテープを分離する（テープ分離工程）。ここで、テープは封止工程で、封止樹脂がリードフレームの裏面に流出してバリが発生することを防止するものである。次に、半導体装置を配線基板に実装する（ＰＫＧマウント工程）。
【００２０】
なお、封止工程後に、半導体素子を複数個搭載し封止した状態のリ−ドフレ−ムを個別の半導体集積回路装置に分割する前の工程にて、テ−プを分離する必要がある。
【００２１】
図２は、テープ６が貼り付いた状態の樹脂封止体７を示す断面図であり、図３は、テープを剥がした後の樹脂封止体７を示す斜視図である。
【００２２】
図２に示す状態の樹脂封止体７のリードフレーム８からテープ６を剥がして、図３に示す状態とするには、次のような方法により行う。
【００２３】
図４は、本実施形態の半導体装置の製造装置および半導体装置の製造方法の各工程を示す断面図である。
【００２４】
図４に示すように、封止工程終了後、半導体素子を複数個搭載し樹脂封止した状態のリ−ドフレ−ム８を加熱ステージ１０上に樹脂封止体７側を機械的に固定し、その際に上面となるリ−ドフレ−ム８の端子面に対して可動する加熱ブロック９をリ−ドフレ−ム８の端子面に貼り付けられているテープ６に接するように配置する。
【００２５】
ここで、加熱ブロック９のリ−ドフレ−ム８に対する接触部は、平坦な平面形状とし、加熱ブロック９のテープ６が密着する部分の形状については、テープ６の引っ張り方向とリードフレーム８の裏面とのなす角と同一であり、リ−ドフレ−ム８からテープ６を分離する際の応力を軽減するため１５〜４５度の楔形形状としている。
【００２６】
そして、リ−ドフレ−ム８およびテープ６を加熱ステージ１０および加熱ブロック９により、リ−ドフレ−ム８とテープ６を固定している接着層が溶融する個々の設定温度まで昇温し、リ−ドフレ−ム８の端部に貼り付いているテープ６を機械的保持機構により保持し、リ−ドフレ−ム８とテープ６の分離を開始する。
【００２７】
その際、テープ６の分離に伴い、加熱ブロック９も分離点の移動に追従して可動する構造としている。
【００２８】
そして、リ−ドフレ−ム８とテープ６の分離が完了すると、テープ６の機械的保持機構を解除し、その後、リ−ドフレ−ム８を固定している機械的保持を解除してリ−ドフレ−ム８とテープ６の分離する一連の工程を完了する。
【００２９】
また、この分離工程に対して、リ−ドフレ−ム８の自動供給装置および自動取出し装置を設置し、リ−ドフレ−ム供給、テ−プ分離、リ−ドフレ−ム取出しを一連で行なう生産用自動テ−プ分離装置についても、この分離機構を使用することによって構築することができる。
【００３０】
なお、テープ６側から高温の空気を供給することによって、テープ６を加熱しながら剥がしてもよい。
【００３１】
【発明の効果】
本発明の半導体装置の製造装置および半導体装置の製造方法は、リ−ドフレ−ム上に搭載された複数の半導体素子を封止樹脂により保護封止するため、リ−ドフレ−ムに貼り付けられた封止樹脂漏れ防止用のテ−プを封止後の工程にて、リ−ドフレ−ムより分離するため、リ−ドフレ−ムを固定の加熱ステージと可動する加熱ブロックにより挟みこみ、テ−プを分離することを特徴とする治具によれば、リ−ドフレ−ムとテープを個々に加熱することによって粘着層の温度分布を、均一化し粘着層の溶融点まで昇温することによって、従来テ−プの破れおよび粘着層の残留を防止する。また、加熱ブロックの形状を楔形とすることで、リ−ドフレ−ムからテ−プを分離する際に発生する応力による半導体集積回路装置の破損を防止して安定してテ−プを分離することができる。
【００３２】
また、リ−ドフレ−ムとテープを個々に加熱することにより、過剰な加熱をすることが不要になり、また双方の材料的特性である熱収縮の違いによる、ねじれ又はソリなどの変形を防止することによって半導体集積回路装置に対しての負荷を軽減することができ、生産される半導体集積回路装置の破損を防止することができる。
【００３３】
また、リ−ドフレ−ムに貼り付けられた封止樹脂漏れ防止用のテ−プを封止後の工程にてリ−ドフレ−ムより分離するため、リ−ドフレ−ムを固定の加熱ブロックと可動する加熱ブロックにより挟みこみ、テ−プを分離する治具を装備し、リ−ドフレ−ムの自動供給および取出しをする装置は、リ−ドフレ−ムとテ−プを分離する。また、加工前のリ−ドフレ−ムを自動供給し、加工後のリ−ドフレ−ムの自動取出しをすることにより、全自動での工程動作を構築することができ、工場の省力化、合理化および製品のコストダウンを行なうことができる。
【図面の簡単な説明】
【図１】本発明の一実施形態の半導体装置の製造方法のフロー図
【図２】本発明の一実施形態の半導体装置の製造方法の一工程を示す断面図
【図３】本発明の一実施形態の半導体装置の製造方法の一工程を示す斜視図
【図４】本発明の一実施形態の半導体装置の製造方法の一工程を示す断面図
【図５】従来の半導体装置の製造方法の一工程を示す断面図
【符号の説明】
１ リードフレーム
２ 封止樹脂
３ テープ
４ 加熱ステ−ジ
５ 接着層
６ テープ
７ 樹脂封止体
８ リードフレーム
９ 加熱ブロック
１０ 加熱ステージ[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor device in which a tape attached to the back surface of a lead frame before sealing is easily peeled off after the sealing step in a sealing process with a sealing resin of a semiconductor device having a semiconductor element mounted on the lead frame. And a semiconductor device manufacturing apparatus.
[0002]
[Prior art]
Conventionally, in a semiconductor integrated circuit device, a semiconductor element and a lead frame serving as a metal terminal are electrically connected by a bonding wire, and then the semiconductor element and the lead frame lead are protected by a sealing resin. It was supplied in a sealed state and mounted on a printed circuit board.
[0003]
Hereinafter, a conventional method for manufacturing a semiconductor device will be described.
[0004]
FIG. 5 is a cross-sectional view showing a conventional method for manufacturing a semiconductor device.
[0005]
As shown in FIG. 5, the tape 3 is attached to the back surface of the lead frame 1 so that the sealing resin 2 does not flow out to the back surface of the lead frame 1 to be formed as burrs in the sealing process. . In the step of peeling the tape 3 from the lead frame 1, the sealing resin side is mechanically fixed by the heating stage 4, and the temperature is raised by the heater heat to increase the sealing resin material, the lead frame 1 and The tape 3 is warmed, the adhesive layer 5 of the tape 3 is softened, and the lead frame 1 and the tape 3 are separated by an external force.
[0006]
[Problems to be solved by the invention]
However, in the conventional method of manufacturing a semiconductor device, the sealing resin material and the lead frame have different heat capacities, and the sealing resin material has poor heat transfer, so that the temperature of the adhesive layer is not increased uniformly. As a result, since the adhesive force remains strong in the low temperature portion, a high stress is generated when the lead frame and the tape are separated, and the tape is broken. Damage to the lead frame occurs due to the adhesive layer remaining on the film and the application of high stress.
[0007]
The present invention solves the above-described conventional method for manufacturing a semiconductor device, and by heating from the tape side, the tape can be more easily attached to the lead frame while the adhesion between the lead frame and the tape is reduced. An object of the present invention is to provide a method of manufacturing a semiconductor device that can be stably peeled off from a semiconductor device.
[0008]
[Means for Solving the Problems]
In order to solve the above-described conventional problems, a method of manufacturing a semiconductor device according to the present invention includes: a resin for a lead frame in which a sealing resin leakage prevention tape is attached to a back surface and a resin sealing body is formed on a front surface; It comprises a step of fixing the sealing body side to the heating stage and a step of peeling the tape from the lead frame while heating from the tape side.
[0009]
The step of peeling the tape from the lead frame while heating from the tape side peels the tape from the lead frame while moving the heating block in contact with the surface of the tape.
[0010]
The step of peeling the tape from the lead frame while heating from the tape side peels the tape from the lead frame while supplying high-temperature air to the tape.
[0011]
Further, the semiconductor device manufacturing apparatus of the present invention includes a heating stage for fixing a resin sealing body side of a lead frame in which a sealing resin leakage preventing tape is attached to the back surface and a resin sealing body is formed on the front surface. , Means for gripping and pulling the tape, and heating means for heating from the tape side.
[0012]
The heating means is a heating block that is in close contact with the tape and moves in the direction of peeling the tape.
[0013]
The heating means is means for supplying high-temperature air from the tape side.
[0014]
As described above, the semiconductor device manufacturing method and the semiconductor device manufacturing apparatus according to the present invention are attached to the lead frame in order to protect and seal a plurality of semiconductor elements mounted on the lead frame with the sealing resin. In order to separate the attached sealing resin leakage prevention tape from the lead frame in the post-resin sealing step, the lead frame is sandwiched between a heating stage and a movable heating block. Isolate
[0015]
In this way, by separating the tape by sandwiching the lead frame between the fixed heating block and the movable heating block, the temperature setting on the tape side and the temperature setting on the sealing resin side are independently made. By heating the tape and the lead frame, the heat deformation of the lead frame, the tape and the sealing resin material can be made uniform, and the amount of deformation can be reduced.
[0016]
In addition, an apparatus for automatically supplying, tape separating and automatically storing a lead frame protects and seals a plurality of semiconductor elements mounted on the lead frame with a sealing resin. In order to separate the tape for sealing resin leakage prevention attached to the frame from the lead frame in the post-sealing process, the lead frame is moved with a fixed heating stage. The tape is separated with a heating block. Also, means for automatically supplying and taking out the lead frame is provided.
[0017]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, an embodiment of a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method according to the present embodiment will be described with reference to the drawings.
[0018]
FIG. 1 is a flowchart showing a series of steps including steps corresponding to the method for manufacturing a semiconductor device of the present embodiment.
[0019]
As shown in FIG. 1, after sealing a semiconductor element mounted on a lead frame with a sealing resin (sealing process, annealing cure process), the tape attached to the back surface of the lead frame is separated (tape separation process) ). Here, the tape is used in the sealing process to prevent the sealing resin from flowing out to the back surface of the lead frame and generating burrs. Next, the semiconductor device is mounted on a wiring board (PKG mounting process).
[0020]
After the sealing step, it is necessary to separate the tape in a step before dividing the lead frame in which a plurality of semiconductor elements are mounted and sealed into individual semiconductor integrated circuit devices.
[0021]
FIG. 2 is a cross-sectional view showing the resin sealing body 7 with the tape 6 attached thereto, and FIG. 3 is a perspective view showing the resin sealing body 7 after the tape is peeled off.
[0022]
The tape 6 is peeled off from the lead frame 8 of the resin sealing body 7 in the state shown in FIG. 2 to obtain the state shown in FIG. 3 by the following method.
[0023]
FIG. 4 is a cross-sectional view showing each step of the semiconductor device manufacturing apparatus and the semiconductor device manufacturing method of the present embodiment.
[0024]
As shown in FIG. 4, after completion of the sealing process, the lead frame 8 in a state in which a plurality of semiconductor elements are mounted and resin-sealed is mechanically fixed on the heating stage 10 on the resin sealing body 7 side. In this case, a heating block 9 that is movable with respect to the terminal surface of the lead frame 8 serving as the upper surface is disposed so as to be in contact with the tape 6 attached to the terminal surface of the lead frame 8.
[0025]
Here, the contact portion of the heating block 9 with respect to the lead frame 8 has a flat planar shape, and the shape of the portion of the heating block 9 where the tape 6 is in close contact is determined with respect to the pulling direction of the tape 6 and the back surface of the lead frame 8. In order to reduce the stress when the tape 6 is separated from the lead frame 8, a wedge shape of 15 to 45 degrees is used.
[0026]
Then, the lead frame 8 and the tape 6 are heated by the heating stage 10 and the heating block 9 to individual set temperatures at which the adhesive layer fixing the lead frame 8 and the tape 6 is melted. -The tape 6 stuck to the end of the frame 8 is held by a mechanical holding mechanism, and separation of the lead frame 8 and the tape 6 is started.
[0027]
At that time, as the tape 6 is separated, the heating block 9 is configured to move following the movement of the separation point.
[0028]
When the separation of the lead frame 8 and the tape 6 is completed, the mechanical holding mechanism for the tape 6 is released, and then the mechanical holding for fixing the lead frame 8 is released to release the tape. A series of steps for separating the frame 8 and the tape 6 is completed.
[0029]
In addition, for this separation process, an automatic supply device and an automatic removal device for the lead frame 8 are installed, and production is performed in a series of lead frame supply, tape separation, and lead frame removal. An automatic tape separation apparatus can also be constructed by using this separation mechanism.
[0030]
In addition, you may peel off, heating the tape 6 by supplying high temperature air from the tape 6 side.
[0031]
【The invention's effect】
According to the semiconductor device manufacturing apparatus and the semiconductor device manufacturing method of the present invention, a plurality of semiconductor elements mounted on the lead frame are bonded to the lead frame in order to protect and seal the semiconductor elements with the sealing resin. To separate the sealing resin leakage prevention tape from the lead frame in the post-sealing process, the lead frame is sandwiched between a fixed heating stage and a movable heating block, -According to the jig characterized by separating the loop, the temperature distribution of the adhesive layer is made uniform by heating the lead frame and the tape individually, and the temperature is raised to the melting point of the adhesive layer. The conventional tape is prevented from breaking and the adhesive layer remaining. Further, by making the heating block into a wedge shape, the tape is stably separated by preventing damage to the semiconductor integrated circuit device due to the stress generated when the tape is separated from the lead frame. be able to.
[0032]
In addition, heating the lead frame and tape individually eliminates the need for excessive heating, and prevents deformation such as twisting or warping due to the difference in thermal shrinkage that is a material characteristic of both. By doing so, it is possible to reduce the load on the semiconductor integrated circuit device and to prevent damage to the produced semiconductor integrated circuit device.
[0033]
Also, in order to separate the sealing resin leakage prevention tape attached to the lead frame from the lead frame in the post-sealing process, the lead frame is fixed to a heating block. A device that is sandwiched by a movable heating block and is equipped with a jig for separating the tape and automatically supplying and taking out the lead frame separates the lead frame and the tape. In addition, by automatically supplying the lead frame before processing and automatically taking out the lead frame after processing, it is possible to build a fully automatic process operation, saving labor and rationalizing the factory. In addition, the cost of the product can be reduced.
[Brief description of the drawings]
FIG. 1 is a flowchart of a method for manufacturing a semiconductor device according to an embodiment of the present invention. FIG. 2 is a cross-sectional view illustrating one process of a method for manufacturing a semiconductor device according to an embodiment of the present invention. FIG. 4 is a perspective view showing one process of a semiconductor device manufacturing method according to an embodiment. FIG. 4 is a cross-sectional view showing one process of a semiconductor device manufacturing method according to an embodiment of the present invention. Sectional drawing showing one process 【Explanation of symbols】
DESCRIPTION OF SYMBOLS 1 Lead frame 2 Sealing resin 3 Tape 4 Heating stage 5 Adhesive layer 6 Tape 7 Resin sealing body 8 Lead frame 9 Heating block 10 Heating stage

Claims (6)

裏面に封止樹脂漏れ防止用のテープが貼り付けられ、表面に樹脂封止体が形成されたリードフレームの前記樹脂封止体側を加熱ステージに固定する工程と、前記テープ側から加熱しながら前記テープをリードフレームから剥がす工程とからなることを特徴とする半導体装置の製造方法。A step of fixing the resin sealing body side of the lead frame on which the tape for sealing resin leakage prevention is attached to the back surface and the resin sealing body is formed on the surface to a heating stage, while heating from the tape side And a step of peeling the tape from the lead frame. テープ側から加熱しながら前記テープをリードフレームから剥がす工程は、前記テープの表面に加熱ブロックを接触させ移動させながら前記テープを前記リードフレームから剥がすことを特徴とする請求項１に記載の半導体装置の製造方法。2. The semiconductor device according to claim 1, wherein the step of peeling the tape from the lead frame while heating from the tape side peels the tape from the lead frame while moving the heating block in contact with the surface of the tape. Manufacturing method. テープ側から加熱しながら前記テープをリードフレームから剥がす工程は、前記テープに高温の空気を供給しながら前記テープをリードフレームから剥がすことを特徴とする請求項１に記載の半導体装置の製造方法。2. The method of manufacturing a semiconductor device according to claim 1, wherein the step of peeling the tape from the lead frame while heating from the tape side peels the tape from the lead frame while supplying high-temperature air to the tape. 裏面に封止樹脂漏れ防止用のテープが貼り付けられ、表面に樹脂封止体が形成されたリードフレームの樹脂封止体側を固定する加熱ステージと、
前記テープを把持して引っ張る手段と、
前記テープ側から加熱する加熱手段とを備えていることを特徴とする半導体装置の製造装置。A heating stage for fixing a resin sealing body side of a lead frame in which a tape for sealing resin leakage prevention is attached to the back surface, and a resin sealing body is formed on the surface;
Means for gripping and pulling the tape;
An apparatus for manufacturing a semiconductor device, comprising: heating means for heating from the tape side. 加熱手段はテープに密着し、前記テープの剥がす方向に移動する加熱ブロックであることを特徴とする請求項４に記載の半導体装置の製造装置。5. The semiconductor device manufacturing apparatus according to claim 4, wherein the heating means is a heating block that is in close contact with the tape and moves in a direction in which the tape is peeled off. 加熱手段はテープ側から高温の空気を供給する手段であることを特徴とする請求項４に記載の半導体装置の製造装置。5. The apparatus for manufacturing a semiconductor device according to claim 4, wherein the heating means is means for supplying high-temperature air from the tape side.
JP2001227439A 2001-07-27 2001-07-27 Semiconductor device manufacturing method and semiconductor device manufacturing apparatus Expired - Fee Related JP4418610B2 (en)

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